TW200943291A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
TW200943291A
TW200943291A TW097141757A TW97141757A TW200943291A TW 200943291 A TW200943291 A TW 200943291A TW 097141757 A TW097141757 A TW 097141757A TW 97141757 A TW97141757 A TW 97141757A TW 200943291 A TW200943291 A TW 200943291A
Authority
TW
Taiwan
Prior art keywords
word line
common
memory blocks
semiconductor device
common word
Prior art date
Application number
TW097141757A
Other languages
Chinese (zh)
Other versions
TWI480870B (en
Inventor
Shota Okayama
Yasumitsu Murai
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200943291A publication Critical patent/TW200943291A/en
Application granted granted Critical
Publication of TWI480870B publication Critical patent/TWI480870B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1693—Timing circuits or methods

Abstract

There is provided a semiconductor device that enables high-speed data read and reduces the area of a drive circuit for activating a word line. By signal transmission through a common word line having a low resistance and coupled at a plurality of points to a word line, it is possible to read data at high speed. Further, since the common word line is provided common to a plurality of memory blocks, a word line driver can be provided common to the memory blocks. Further, by disposing a latch circuit, corresponding to a sub-digit line, for holding the active state of the common word line, it is possible to transmit a row selection signal during data write through the common word line and thereby reduce a metal wiring layer.
TW097141757A 2007-12-28 2008-10-30 Semiconductor device TWI480870B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007339854 2007-12-28
JP2008140921A JP5150936B2 (en) 2007-12-28 2008-05-29 Semiconductor device

Publications (2)

Publication Number Publication Date
TW200943291A true TW200943291A (en) 2009-10-16
TWI480870B TWI480870B (en) 2015-04-11

Family

ID=41031319

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097141757A TWI480870B (en) 2007-12-28 2008-10-30 Semiconductor device

Country Status (3)

Country Link
JP (1) JP5150936B2 (en)
CN (1) CN101593551A (en)
TW (1) TWI480870B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI628664B (en) * 2015-09-18 2018-07-01 台灣積體電路製造股份有限公司 Dual rail memory, memory macro and assiociated hybrid power supply method

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* Cited by examiner, † Cited by third party
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US8050109B2 (en) * 2009-08-10 2011-11-01 Sandisk 3D Llc Semiconductor memory with improved memory block switching
JP5149414B2 (en) * 2010-07-16 2013-02-20 シャープ株式会社 Semiconductor memory device and driving method thereof
JP5684081B2 (en) * 2011-09-22 2015-03-11 株式会社東芝 Analog / digital converter
JP2013131521A (en) * 2011-12-20 2013-07-04 Fujitsu Ltd Magnetic resistance element, semiconductor memory, and system
CN103456350A (en) * 2012-05-30 2013-12-18 辉达公司 Semiconductor memory device and word line decoding wiring method
CN105097036B (en) * 2015-07-10 2019-11-12 北京兆易创新科技股份有限公司 Read operation control method and device in data storage type flash memory
KR102395724B1 (en) * 2015-10-07 2022-05-10 에스케이하이닉스 주식회사 Semiconductor memory device and operating method thereof
US10950294B2 (en) * 2019-04-24 2021-03-16 Micron Technology, Inc. Apparatuses and methods for controlling driving signals in semiconductor devices including word and subword driver circuits

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
US5946227A (en) * 1998-07-20 1999-08-31 Motorola, Inc. Magnetoresistive random access memory with shared word and digit lines
JP2002170377A (en) * 2000-09-22 2002-06-14 Mitsubishi Electric Corp Thin film magnetic storage device
JP4726290B2 (en) * 2000-10-17 2011-07-20 ルネサスエレクトロニクス株式会社 Semiconductor integrated circuit
JP4726292B2 (en) * 2000-11-14 2011-07-20 ルネサスエレクトロニクス株式会社 Thin film magnetic memory device
JP4731041B2 (en) * 2001-05-16 2011-07-20 ルネサスエレクトロニクス株式会社 Thin film magnetic memory device
US6490217B1 (en) * 2001-05-23 2002-12-03 International Business Machines Corporation Select line architecture for magnetic random access memories
JP4780878B2 (en) * 2001-08-02 2011-09-28 ルネサスエレクトロニクス株式会社 Thin film magnetic memory device
JP4771631B2 (en) * 2001-09-21 2011-09-14 ルネサスエレクトロニクス株式会社 Thin film magnetic memory device
KR100505104B1 (en) * 2002-04-30 2005-07-29 삼성전자주식회사 Magnetic random access memory cells, structures thereof and operation methods thereof
JP4190238B2 (en) * 2002-09-13 2008-12-03 株式会社ルネサステクノロジ Nonvolatile semiconductor memory device
JP2004185755A (en) * 2002-12-05 2004-07-02 Sharp Corp Nonvolatile semiconductor storage device
JP2005064050A (en) * 2003-08-14 2005-03-10 Toshiba Corp Semiconductor memory device and method of writing data therein
KR100597636B1 (en) * 2004-06-08 2006-07-05 삼성전자주식회사 Phase change Random Access Memory device
US7345912B2 (en) * 2006-06-01 2008-03-18 Grandis, Inc. Method and system for providing a magnetic memory structure utilizing spin transfer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI628664B (en) * 2015-09-18 2018-07-01 台灣積體電路製造股份有限公司 Dual rail memory, memory macro and assiociated hybrid power supply method

Also Published As

Publication number Publication date
CN101593551A (en) 2009-12-02
JP5150936B2 (en) 2013-02-27
TWI480870B (en) 2015-04-11
JP2009176396A (en) 2009-08-06

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees