200940216 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種藉由將金屬或含有粉末之金屬熱 壓至金屬底板中而製成之複合濺鍍靶組件，更特別地 是，本發明係關於一種製造熱壓複合濺鍍靶組件之方 法，其藉由將比較昂貴的材料（諸如含有製備靶所需之貴 金屬材料）限制於濺鍍製程中所利用之靶的區域，用以降 低這些材料的數量。本發明係進一步關於藉由上述方法 所製成之靶。 【先前技術】 許多薄層材料可藉由習知直流磁控管濺鍍之製程而 被沈積在基板材料上。典型濺鍍系統包括產生高能量電 漿之手段，其從用以形成蒸汽材料（其凝結於期望基板之 表面上）的來源表面移除將被沈積之材料。在此系統中， 將被沈積在基板上之材料來源稱為滅鍍乾（sputtering target)。藏鍍把可由將被沈積之材料單獨組成，或者在 某些情況下，將被沈積之材料係形成稱為濺鍍靶瓦之物 體，其連結於稱為濺鍍靶底板之相異材料，而此整體組 件稱為濺鍍靶。濺鍍靶構造的選擇係取決於所使用的濺 鍍系統、將被沈積之材料的物理及電氣特性，以及將被 沈積之材料的費用。 在濺鍍製程中，高能量電漿連續侵蝕形成一凹陷處 200940216 之濺，靶材料之表面，其中凹陷處為習知濺鍍靶之表面 中之，侵蝕凹槽（erosion groove)” 。因其特有形狀的關 係’故此侵蝕凹槽一般於薄膜製造業中稱為，，跑道 (racetrack)’’。最後，侵蝕凹槽變得太深而使靶材料無法 進一步執行濺鍍且在此時認為濺鍍靶為，，用過的 (spent)”。 在典型之濺鍍製程中，僅20〜40%之靶材料被利用， 且剩下的免材料不是被廢棄就是藉由聽化或精煉而被 ❹回收重新利用。習慣上，回收貴金綠可把濺鍍乾材料 之f值變成資本。由於用過的靶在其可被利用來作成新 把刖被侷限在再溶化及/或精煉上，故該回收製程辦加 行濺鍍製程所需之貴金屬之數量。其通常需要^費 週，或甚至數個月從一可取得用過的靶提取剩餘材料 此外’在回收製程中有顯著的材料損失。 广’ 雖然藏鍍製程中所使用的大部分材料，在經濟上/ 可實行回收，然而對比較昂貴的材料（諸如，其包含諸係 〇 pt、Ru、pd、Os、Ir、Rh及Re之貴金屬，或責金屬$ 其它金屬或金屬氧化物之組合)卻非必然。此情;兄下，、 回收製程之費用及材料耗損之數量係相當足夠使製造= 有貴金屬之濺鍍靶的方式有顯著改變。 習知技術並無教示複合濺鍍靶組件可藉由粉末;A金 製程而被有效地製造。此製程之一係1995年3月 揭露於Mueller之美國專利第5397050號，其揭示—種生 產由鎢-鈦合金靶及鈦底板所組成之複合濺鍍靶組# < 200940216 方法。鈦底板係配置於一金屬罐中，以及鎢-鈦粉末係配 置於金屬罐中之鈦底板的頂部上。包含粉末及底板之金 屬罐係藉由熱均壓壓緊（HIPid)以形成複合濺鍍靶。然 而，由於此製程涉及包含於金屬罐内之HWing粉末， 故其因為昂貴的製罐材料、切削、製罐及HIP程序與設 備（其增加製造成本）的使用而比較昂貴。此外，其昂貴 的靶材料並沒有被限制在靶之濺鍍區域上，因此用以形 成此類濺鍍靶之昂貴靶材料之數量沒有明顯減少。 揭露此方法之另一者為1999年3月14日Stellrecht 之美國專利第5963778號，其中複合靶係利用粉末冶金 製程來製造，以及其試圖將昂貴的濺鍍材料限制在靶的 濺鍍區域。然而如同前述之發明，用以備製複合靶之製 程係HlPIng，因此具有如同上述之成本問題。200940216 VI. Description of the Invention: [Technical Field] The present invention relates to a composite sputtering target assembly made by thermally pressing a metal or a powder-containing metal into a metal base plate, and more particularly, the present invention A method for manufacturing a hot-pressed composite sputtering target assembly for reducing these by limiting a relatively expensive material, such as a noble metal material required to prepare a target, to a region of a target utilized in a sputtering process The amount of material. The present invention is further directed to a target made by the above method. [Prior Art] Many thin layer materials can be deposited on a substrate material by a conventional DC magnetron sputtering process. A typical sputtering system includes a means of producing a high energy plasma that removes material to be deposited from a source surface used to form a vapor material that condenses on the surface of a desired substrate. In this system, the source of material to be deposited on the substrate is referred to as a sputtering target. The deposition plate can be composed of the material to be deposited alone, or in some cases, the material to be deposited forms an object called a sputtering target tile, which is bonded to a dissimilar material called a sputtering target substrate. This integral component is called a sputtering target. The choice of sputter target configuration depends on the sputtering system used, the physical and electrical properties of the material to be deposited, and the cost of the material to be deposited. In the sputtering process, the high-energy plasma continuously erodes to form a depression, 200940216, the surface of the target material, wherein the depression is the erosion groove in the surface of the conventional sputtering target. The unique shape relationship 'so the erosion groove is generally referred to in the film manufacturing industry, the racetrack'. Finally, the erosion groove becomes too deep for the target material to be further sputtered and considered splashed at this time. The target is, and is used. In a typical sputtering process, only 20 to 40% of the target material is utilized, and the remaining free material is either discarded or recycled for reuse by hearing or refining. It is customary to recycle precious gold to convert the f-value of the sputter dry material into capital. Since the used target can be utilized to make new enthalpy confined to re-melting and/or refining, the recycling process performs the amount of precious metal required for the sputtering process. It usually takes weeks, or even months, to extract the remaining material from a usable target. In addition, there is significant material loss in the recycling process. Although most of the materials used in the Tibetan plating process are economically/recoverable, they are relatively expensive materials (such as those containing the systems pt, Ru, pd, Os, Ir, Rh, and Re). Precious metals, or metal combinations of other metals or metal oxides, are not required. In this case, under the brother, the cost of the recycling process and the amount of material loss are quite sufficient to make a significant change in the way the manufacturing = splash target with precious metals. Conventional techniques do not teach that a composite sputter target assembly can be efficiently fabricated by a powder; A gold process. One of the processes is disclosed in U.S. Patent No. 5,397,050 issued to Mueller in March 1995, which discloses the production of a composite sputtering target group consisting of a tungsten-titanium alloy target and a titanium substrate # < 200940216. The titanium base plate is disposed in a metal can, and the tungsten-titanium powder is placed on top of the titanium base plate in the metal can. The metal can containing the powder and the bottom plate is compacted by heat grading (HIPid) to form a composite sputtering target. However, since this process involves HWing powder contained in metal cans, it is expensive due to the use of expensive can making materials, cutting, can making and HIP procedures and equipment (which increases manufacturing costs). In addition, its expensive target material is not limited to the sputtering area of the target, so the amount of expensive target material used to form such a sputtering target is not significantly reduced. The other disclosed in this method is U.S. Patent No. 5,963,778 to Stellrecht, March 14, 1999, in which the composite target is manufactured using a powder metallurgy process and which attempts to limit the expensive sputter material to the sputtering region of the target. However, as with the foregoing invention, the process system H1PIng for preparing the composite target has a cost problem as described above.
Sandlin等人於美國專利第7175802號中揭露一種翻 新用過的濺鍍靶之方法，其藉由將濺鍍侵蝕凹槽填滿新 的材料，將新濺鍍靶應用至用過的濺鍍靶上。此製程亦 為利用HlPIng來完成。此發明並沒有將昂貴的濺鍍材 料限制在靶之濺鍍區域，但其的確係以重複使用用過靶 代替將其回收。然而，其仍剩下相當大量的昂貴材料於 濺鍍製程中沒有被使用，而造成仍擁有較高的費用。此 外，此揭示製程需要將該用過靶完全浸入昂貴材料粉末 中，其在壓縮後需要移除及回收再利用。 【發明内容】 200940216 依據本發明，其提供一種製造濺鍍靶組件之方法， 其限制含有貴金屬之賤鍵把材料於乾之減艘區域，藉以 降低含有貴金屬之濺鐘材料所需之數量，以產生濺鍵把 組件，並且進一步增加貢獻於濺鍍製程中之材料效率， 因此降低賤鑛乾組件（assembly)所需成本及滅鍍製程所 需資本投資。此方法包含提供一比較不昂貴的材料之底 板，其在化學上及機械上係與含有貴金屬之濺鍍材料相 容，且表面具有一凹陷處（depression)(其於第一實施例中 φ 係可經由切削形成於底板），係對應於已使用之濺鍍靶中 所見之減鑛侵姓圖案（erosion pattern)。將底板配置於一 石墨模具（graphite die)中，此石墨模具係被塑形以容納 底板之幾何形狀（亦即，尺寸及形狀）。以含有貴金屬之 濺鍍材料粉末填滿底板之凹陷處，接著將一石墨柱塞 (ram)配置於此粉末層之頂部上。接著，將包含底板粉末 裝置之模具配置於真空熱麗機中，以合併（consolidate) 並壓密（densify)含有貴金屬之濺鍍靶材料粉末於底板凹 φ 陷處中。真空熱壓不僅合併且壓縮含有貴金屬之濺鍍靶 材料，而且熱壓亦藉由在含有貴金屬之濺鍍靶材料與底 板之間產生強烈的機械附著與緊密電及熱傳導路徑’而 有助於含有貴金屬之濺鍍材料與底板材料間之強烈金屬 間鍵結的形成。在熱壓後，可能需要極少責的切削 (machine)以獲得特定濺鍍靶設計所需之尺寸規格。 在本發明之較佳實施例中，製造含有貴金屬之濺鍍 靶組件的方法包含：設置底板，其包括具有〆凹陷處 之表面；2)將底板配置在用以容納此底板之幾何形狀的 200940216 石墨模具組之凹洞中；3)配置濺鍍材料於凹洞中與凹陷 處接觸，形成一模具裝置（die assemblage)，使激鑛材料 一預定深度完全覆蓋底板之表面；4)將石墨柱塞配置於 裝置之凹洞中，以接觸濺鍍材料之頂部；5)將此柱塞與 模具裝置配置於真空熱壓爐之腔室中，並以一足夠壓力 與一足夠溫度，於真空下熱壓一足夠時間，以將濺鍍材 料壓縮且合併於底板之凹陷處中，以形成濺鍍靶預型件 (preform)。接著降低柱塞上的壓力至零，冷卻或使熱壓 爐室冷卻至周圍溫度。且一旦熱壓爐已經冷卻下來，提 高或使真空準位回復至周圍壓力；以及6)移出並選擇性 切削濺鍍靶預型件，以獲得複合濺鍍靶。在本發明之進 一步有助益的實施例中，底板係由不同於濺鍍靶材料之 材料所組成，以及係由_ (Mo)、妮(Nb)、组(Ta)或其它财 火金屬或合金之一或多者所組成。有助益地是，凹陷處 至少對應於已使用之濺鍍靶之濺鍍侵蝕圖案。更佳地 是，凹陷處係對應於用過靶（亦即已被用到無法接受進一 步使用之階段的把）之侵餘圖案。此外，較佳的是，濺鑛 材料為包含貴金屬之粉末，或貴金屬粉末之混合物，或 貴金屬粉末與非貴金屬粉末之混合物，或者貴金屬粉 末、非貴金屬粉末及金屬氧化物粉末之混合物。在本發 明之附加較佳態樣中，石墨模具之幾何形狀係由預生產 之特定濺鍍靶組件設計所決定。 適合的濺鍍材料包括純釕（Ru)、铑(Rh)、鈀(Pd)、銖 (Re)、娥(Os)、銥(Ir)、鉑(Pt)，或者 Ru、Rh、Pd、Re、 Os、Ir、Pt之混合物，或者具有諸如Co、Cr、Ni、Fe 200940216 之過渡金屬之Ru、Rh、Pd、Re、Os、Ir、Pt之混合物， 或者具有諸如Co、Cr、Ni、Fe之過渡金屬以及諸如Ti02 之氧化物之Ru、Rh、Pd、Re、Os、Ir、Pt之混合物，或 者具有諸如Ti02之氧化物之Ru、Rh、Pd、Re、Os、Ir、 Pt之混合物。在所提出之較佳實施例中，純Ru粉末係 作為已使用的濺鍍材料，以及純Mo係用於底板。在可 替代的實施例中，底板係由純Nb金屬所組成。在另一 可替代實施例中，底板係由純Ta所組成。 ❹ 相較於習知技術之固態濺鍍靶，本發明可節省至少 25%，較佳為至少35%，且最佳為至少40%或更多之濺鍍 靶組件所需之濺鍍材料。例如，具矩形幾何形狀之含有 貴金屬之濺鍍靶之製備，在本發明所需之貴金屬材料僅 為只使用含有貴金屬之材料製備含有貴金屬之濺鍍靶 所需之貴金屬材料的50%。 依據本發明之一種降低在含有貴金屬之濺鍍靶製程 中所使用之含有貴金屬之材料的數量之方法，將限制含 ® 有貴金屬之材料僅消耗在需要含有貴金屬之材料之實際 區域，即濺鍍侵蝕凹槽。藉由限制含有貴金屬之材料至 濺鍍靶之侵蝕凹槽區域，以將含有用以製造靶之材料的 貴金屬數量降低大於40%是可想像得到的。一種可實現 此目標之方式係製造複合濺鍍靶，其中含有貴金屬之材 料係形成類似於濺鍍侵蝕凹槽之形狀的形狀中，並應用 於一具特別切削以容納濺鍍製程之侵蝕凹槽的形狀且比 較不昂貴材料所組成的底板。此外，本發明不需要將用 過的靶經過精煉製程，使得用以濺鍍之貴金屬的需求顯 200940216 著減少（以及特別是可減少非具生產能力但仍在回收製 程中之用過靶之材料）。 本發明係提供一種有效及比較低成本之生產複合濺 鍍靶組件之方法，其藉以將含有貴金屬之濺鍍材料限制 在此靶組件之濺鍍區域。其係藉由將含有貴金屬之濺鍍 材料施加至實質上較低費用之材料的底板組件而完成， 此底板組件具有一經切削於其表面中之凹洞，其接近為 用過靶之濺鍍侵蝕凹槽。此外，可應用本發明之製程使 得用過靶之侵蝕凹槽被填滿。在此例中，用過靶變成底 板，並且不需要額外的切削來形成重新加入貴材料的形 狀。 此外，本發明之複合靶係使用真空熱壓來製造，其 利用可重複使用之石墨模具來替代單一使用之金屬罐， 並且於形成製程中所使用之含有貴金屬之材料粉末的數 量可被大大地減少。此成果顯示，比起含有純貴金屬之 材料所製成之靶來說，複合濺鍍靶需要至少少於50%的 昂貴材料。由於其免除用過靶材料之侧襯於濺鍍靶中所 使用之貴材料之生產週期的回收部分，故本發明之製程 明顯降低貢獻於濺鍍製程中所需之貴金屬之數量。此益 處造成貢獻於濺鍍製程中之貴材料的效率有極佳及意想 不到的增進。 【實施方式】 本發明係關於一種製造複合濺鍍靶之方法，其中複 -10- 200940216 合濺鍍靶係由底板及已被併入底板之凹陷處中之濺鍍區 域所組成，用以提供大體上僅具有濺鍍材料而將被用在 濺鍍製程中之濺鍍靶組件。在一實施例中，底板係為與 加入以作為濺鑛材料相同材料之已使用靶。在此實施例 中，已使用靶具有於濺鍍製程期間已被侵蝕之凹陷處的 頂部表面。在一適當溫度與適當時間之真空下，以新的 濺鍍材料單轴壓縮填滿此凹陷處，使此附加材料與已使 用靶結合（bond)，使得其可適用於原靶之製程中。在第 | 二實施例中，底板為不同材料，諸如係為將與濺鍍材料 結合且提供化學、熱及電特性以容許複合靶可用以取代 只專門由蟓鍍材料製得之靶之較不昂貴材料。在此實施 例中，於第1〜3圖中所包括之底板係說明具矩形或圓形 幾何形狀之含有貴金屬之用過濺鍍之外觀。第1圖係說 明含有貴金屬之用過或已使用濺鍍靶10的剖面圖，其顯 示濺鍍侵蝕凹槽（groove)12之深度及形狀。第1圖中， 侵蝕凹槽12係與在具有矩形或圓形任一幾何形狀之含 j 有貴金屬之濺鍍靶中所發現之侵蝕凹槽一致。第2圖係 顯示矩形幾何形狀之用過貴金屬濺鍍靶20之頂部視 圖，其顯示濺鍍侵蝕凹槽22之形狀。第3圖係顯示圓形 幾何形狀之含有貴金屬之濺鍍靶30之頂部視圖，其顯示 濺鍍侵蝕凹槽32之形狀。審視這些圖式，其顯示已使用 的靶中殘留相當大量的貴金屬濺鍍材料，其殘留量相當 於在濺鍍製程中實際上使用之材料的25%。 本發明藉由將含有貴金屬之材料限制在濺鍍製程中 所消耗區域，降低濺鍍靶中含有貴金屬之材料的數量。 -11- 200940216A method of refurbishing a used sputter target is disclosed in U.S. Patent No. 7,175,802 to the application of a new sputter target to a used sputter target by filling the sputter etched recess with a new material. on. This process is also done using HlPIng. This invention does not limit expensive sputter materials to the target sputter area, but it does not recycle the used target instead of recycling it. However, it still leaves a considerable amount of expensive materials that are not used in the sputtering process, resulting in still a high cost. In addition, the disclosed process requires the target to be completely immersed in an expensive material powder which needs to be removed and recycled for reuse after compression. SUMMARY OF THE INVENTION According to the present invention, there is provided a method of fabricating a sputter target assembly that limits the amount of precious metal containing sputter material required to reduce the amount of material containing the precious metal The splash bond assembly is created and further contributes to the material efficiency contributing to the sputtering process, thereby reducing the cost of the tantalum dry assembly and the capital investment required for the blanking process. The method includes providing a substrate of a relatively inexpensive material that is chemically and mechanically compatible with a sputter material containing a noble metal and having a depression on the surface (which is in the first embodiment φ system) It can be formed on the bottom plate via cutting, corresponding to the erosion pattern seen in the sputter target that has been used. The bottom plate is placed in a graphite die that is shaped to accommodate the geometry (i.e., size and shape) of the bottom plate. The depression of the bottom plate is filled with a powder of a sputter material containing a noble metal, and then a graphite ram is placed on top of the powder layer. Next, the mold containing the bottom plate powder device is placed in a vacuum heat machine to consolidate and densify the powder of the sputtering target material containing the noble metal in the recess of the bottom plate. Vacuum hot pressing not only combines and compresses the sputtering target material containing the noble metal, but also the hot pressing also contributes to the inclusion by strong mechanical adhesion and tight electrical and thermal conduction paths between the sputtering target material containing the noble metal and the substrate. The formation of strong intermetallic bonds between the sputtered material of the precious metal and the material of the substrate. After hot pressing, a very small number of machines may be required to obtain the dimensional specifications required for a particular sputter target design. In a preferred embodiment of the invention, a method of fabricating a sputter target assembly containing a noble metal includes: providing a bottom plate comprising a surface having a depression; 2) disposing the bottom plate in 200940216 for receiving the geometry of the bottom plate 3) The graphite mold set is placed in the cavity; 3) the sputter material is placed in the recess to contact the recess to form a die assemblage, so that the mineralized material completely covers the surface of the bottom plate at a predetermined depth; 4) the graphite column The plug is disposed in the cavity of the device to contact the top of the sputtering material; 5) the plunger and the mold device are disposed in the chamber of the vacuum hot pressing furnace, and under a sufficient pressure and a sufficient temperature under vacuum Hot pressing is sufficient for the time to compress and incorporate the sputter material into the recesses of the bottom plate to form a sputter target preform. The pressure on the plunger is then lowered to zero, and the hot press chamber is cooled or cooled to ambient temperature. And once the hot press has cooled down, raise or restore the vacuum level to ambient pressure; and 6) remove and selectively cut the sputter target preform to obtain a composite sputter target. In a further advantageous embodiment of the invention, the bottom plate is composed of a material different from the sputter target material and is made of _ (Mo), Ni (Nb), Group (Ta) or other fortune metals or One or more of the alloys. Advantageously, the recess corresponds at least to the sputter erosion pattern of the sputter target that has been used. More preferably, the depression corresponds to the remnant pattern of the used target (i.e., the handle that has been used to the stage where it is not acceptable for further use). Further, preferably, the splashing material is a powder containing a noble metal, or a mixture of precious metal powders, or a mixture of a noble metal powder and a non-precious metal powder, or a mixture of a precious metal powder, a non-precious metal powder, and a metal oxide powder. In an additional preferred aspect of the invention, the geometry of the graphite mold is determined by the design of the particular sputter target assembly that is pre-produced. Suitable sputtering materials include pure ruthenium (Ru), rhodium (Rh), palladium (Pd), ruthenium (Re), osmium (Os), iridium (Ir), platinum (Pt), or Ru, Rh, Pd, Re. a mixture of Os, Ir, Pt, or a mixture of Ru, Rh, Pd, Re, Os, Ir, Pt having a transition metal such as Co, Cr, Ni, Fe 200940216, or having such as Co, Cr, Ni, Fe a transition metal and a mixture of Ru, Rh, Pd, Re, Os, Ir, Pt such as an oxide of Ti02, or a mixture of Ru, Rh, Pd, Re, Os, Ir, Pt having an oxide such as Ti02. In the preferred embodiment presented, pure Ru powder is used as the sputter material that has been used, and pure Mo is used for the substrate. In an alternative embodiment, the bottom plate is comprised of pure Nb metal. In another alternative embodiment, the bottom plate is comprised of pure Ta. The present invention saves at least 25%, preferably at least 35%, and most preferably at least 40% or more of the sputter material required for the sputter target assembly, compared to conventional solid state sputter targets. For example, in the preparation of a sputter target containing a noble metal having a rectangular geometry, the precious metal material required in the present invention is only 50% of the precious metal material required to prepare a sputter target containing a noble metal using only a material containing a noble metal. A method for reducing the amount of precious metal-containing material used in a sputter target process containing a noble metal according to the present invention limits the material containing the noble metal to be consumed only in the actual region of the material requiring the precious metal, i.e., sputtering Erosion of the groove. It is conceivable to reduce the amount of precious metal containing the material used to make the target by more than 40% by limiting the material containing the precious metal to the etched groove region of the sputter target. One way to achieve this is to make a composite sputter target in which the material containing the precious metal forms a shape similar to the shape of a sputter-etched recess and is applied to an erosion groove that is specially cut to accommodate the sputtering process. The shape of the base plate is composed of less expensive materials. In addition, the present invention does not require the used target to be subjected to a refining process, so that the demand for precious metals for sputtering is reduced (and, in particular, the use of materials that are not productive but still used in the recycling process) ). SUMMARY OF THE INVENTION The present invention provides an efficient and relatively low cost method of producing a composite sputter target assembly whereby a sputter material containing precious metals is confined to the sputter region of the target assembly. This is accomplished by applying a sputter material containing a precious metal to a bottom plate assembly of a substantially lower cost material having a recess cut into its surface that is nearly etched by the splash of the used target. Groove. In addition, the process of the present invention can be applied so that the etched grooves of the used target are filled. In this case, the used target becomes the bottom plate and no additional cutting is required to form the shape of the re-added precious material. In addition, the composite target of the present invention is manufactured by vacuum hot pressing, which uses a reusable graphite mold instead of a single-use metal can, and the amount of the precious metal-containing material powder used in the forming process can be greatly increased. cut back. This result shows that composite sputter targets require at least 50% more expensive materials than targets made from materials containing pure precious metals. The process of the present invention significantly reduces the amount of precious metal required to contribute to the sputtering process because it eliminates the recycling portion of the production cycle of the noble material used to smear the target material in the sputtering target. This benefit results in an excellent and unexpected increase in the efficiency of the valuable materials contributing to the sputtering process. [Embodiment] The present invention relates to a method for fabricating a composite sputtering target, wherein a complex-10-200940216 sputtering target is composed of a bottom plate and a sputtering region that has been incorporated into a recess of the bottom plate to provide A sputtering target assembly that will only be used in a sputtering process with only a sputter material. In one embodiment, the bottom plate is a used target that is added to the same material as the splashing material. In this embodiment, the target has been used to have a top surface that has been eroded during the sputtering process. The depression is filled with a new sputtering material under uniaxial compression at a suitable temperature and a suitable time to bond the additional material to the used target, making it suitable for use in the original target process. In the second embodiment, the bottom plate is made of a different material, such as a combination of a sputtering material and providing chemical, thermal, and electrical properties to allow the composite target to be used in place of a target that is exclusively made of a ruthenium plated material. Expensive materials. In this embodiment, the bottom plate included in Figures 1 to 3 illustrates the appearance of a sputtered noble metal containing a rectangular or circular geometry. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing the use or use of a sputter target 10 containing a precious metal showing the depth and shape of the sputter erosion groove 12. In Fig. 1, the erosion groove 12 is consistent with the erosion groove found in a sputter target containing a noble metal of any geometric shape of a rectangle or a circle. Figure 2 is a top plan view of a used noble metal sputter target 20 showing a rectangular geometry showing the shape of the sputter erosion recess 22. Figure 3 is a top plan view of a sputter target 30 of a circular geometry showing a noble metal showing the shape of the sputter erosion recess 32. Looking at these patterns, it shows that a significant amount of precious metal sputter material remains in the used target, which is equivalent to 25% of the material actually used in the sputtering process. The present invention reduces the amount of precious metal-containing material in the sputter target by limiting the material containing the precious metal to the area consumed in the sputtering process. -11- 200940216
本發明藉由利用一底板來實現此目的，其在一實施例中 係由諸如Mo、Ta、Nb或者其它耐火金屬及合金之比較 不昂貴的材料所組成，其在機械上與化學上可與含有貴 金屬之材料相容。第4圖係為底板40之剖面圖，其頂部 表面41具有一凹陷處42或在此例子係具有一凹槽。在 底板40包含一已使用或用過之把的情況下，凹陷處可為 已使用之把的磨損路控或侵姓凹槽。在不同實施例 中，凹陷處42可為經切削底板之頂部表面41而形成之 凹槽。凹槽係圖示於第1圖中，其中凹槽係對應於或接 近於濺鍍侵蝕凹槽之幾何形狀。侵蝕凹槽之幾何形狀係 用以決定凹陷處結構。較佳地是，此資訊可用以最大化 凹陷處結構，以平衡濺鍍靶之數量，使得可使用儘可能 小的濺鍍材料體積，同時容許將裝配之靶具有最大產品 壽命。第5圖係說明複合濺鍍靶5〇之剖面，其中含有= 金屬之濺鍍材料51形成一濺鍍區域52，此濺鍍區域52 主要限制複合濺鍍靶50之濺鍍面積，且含有貴金屬之濺 鍍靶的大部分體積係由底板材料53所組成。藉由本發明 可實現省去超過50%生產含有貴金屬之濺鑛靶所需之含 有貴金屬之材料的數量。 第6及7圖係說明如何產生本發明之一例子。如3 6圖中所示，具有經切削凹槽62之表面的耐火金屬或^ 金底板60係以具凹槽表面朝上的方式配置於石墨熱声 模具64内。接著，將一定數量之濺鍍材料66倒入上主 模具之底板60上，以及震動此裝置65 一定時間使身 末均勻地設置於底板表面上。在震動裝置65後，將石 -12- 200940216 熱壓模具柱塞67配置在模具凹洞中直到其接觸濺鍍材 料66之表面。接著將裝置65配置於一液壓機（hydraulic press)中並對其加壓至一預設壓力維持一定時間，以將粉 末緊密（compact)於底板之表面上。在壓緊後，將裝置65 配置在真空熱壓機（未顯示於圖式中）之爐室内部。降低 通過爐室之液壓機的柱塞直到其與熱壓模具柱塞67之 頂部接觸。接著密封爐室並抽真空（evacuate)至50到200 mTorr之間。加熱爐室中之裝置65至800 °C與1000 °C ❹ 之間的溫度，並在此時經由與其接觸之液壓機柱塞施加 壓力至熱壓模具柱塞67。所施加之初始壓力為介於5及 20 tons之間。當裝置65被加熱至14〇〇。(：與1900 °C之 間的溫度’較佳為1500與1550 °C之間的溫度時，柱塞 壓力緩慢增加至10到200 tons之間的壓力。最終柱塞壓 力係取決於含有所製造之含有貴金屬之濺鑛靶的尺寸及 幾何形狀。裝置65係保持於上述溫度與柱塞壓力15至 240分鐘之間，較佳為介於2〇至6〇分鐘之間。在經過 〇 此段時間之後，降低柱塞壓力與溫度兩者至裝置65達到 周圍溫度與壓力，以及一旦爐已冷卻至周圍溫度時，將 真空準位提升至周圍壓力。 第7圖係說明熱壓完成後之第6圖所示之裝置70 之剖面。由圖式中可看出，濺鍍材料已被合併入底板73 之經切削的凹槽内，以形成具有大於濺鍍材料之理論密 度的95°/。之密度的滅鐘區域74。在移除石墨模具柱塞77 後，將已合併（consolidated)之濺鍍材料與底板73所組成 之含有貴金屬之濺鍍靶預型件自熱壓模具75移出。接 -13- 200940216 著，使用CNC銑削（milling)、鑽石研磨（grinding)或放電 加工（EDM)切削預型件以得最後尺寸。 在某些應用中，其中含有貴金屬之材料的碳含量必 須維持在非f低的準位，以模具之内表面與石墨模且 ί ί ί ί Π排列(Η1") M°或其它耐火金屬络片，以防 止碳自石墨模具部擴散至含有貴金屬之材料中。 »•田：：本發明之另一益處為當濺鍍靶係為用過的時. $用過把可利用上述製㈣被用來產 、The present invention accomplishes this by utilizing a substrate which, in one embodiment, is comprised of relatively inexpensive materials such as Mo, Ta, Nb or other refractory metals and alloys that are mechanically and chemically compatible. Materials containing precious metals are compatible. Figure 4 is a cross-sectional view of the bottom plate 40 with the top surface 41 having a recess 42 or, in this example, a recess. Where the bottom plate 40 contains a used or used handle, the recess may be a worn or infested groove that has been used. In various embodiments, the recess 42 can be a groove formed through the top surface 41 of the cutting base. The groove is shown in Figure 1 in which the groove corresponds to or is adjacent to the geometry of the sputter erosion groove. The geometry of the erosion groove is used to determine the structure of the depression. Preferably, this information can be used to maximize the structure of the recess to balance the number of sputter targets so that the smallest possible amount of sputter material can be used while allowing the assembled target to have maximum product life. Figure 5 is a cross-sectional view showing a composite sputtering target 5, wherein the metal-containing sputtering material 51 forms a sputtering region 52 which mainly limits the sputtering area of the composite sputtering target 50 and contains a precious metal. Most of the volume of the sputter target consists of the backing material 53. By the present invention, it is possible to achieve the elimination of more than 50% of the amount of precious metal-containing material required to produce a splash target containing precious metals. Figures 6 and 7 illustrate how an example of the invention can be made. As shown in Fig. 36, the refractory metal or metal base plate 60 having the surface of the cut groove 62 is disposed in the graphite thermoacoustic mold 64 with the grooved surface facing upward. Next, a certain amount of the sputter material 66 is poured onto the bottom plate 60 of the upper main mold, and the device 65 is shaken for a certain period of time to uniformly distribute the body on the surface of the bottom plate. After the vibrating device 65, the stone -12-200940216 hot press mold plunger 67 is placed in the mold cavity until it contacts the surface of the sputter material 66. The device 65 is then placed in a hydraulic press and pressurized to a predetermined pressure for a period of time to compact the powder onto the surface of the bottom plate. After compaction, the apparatus 65 is placed inside the furnace chamber of a vacuum hot press (not shown). The plunger of the hydraulic machine passing through the furnace chamber is lowered until it comes into contact with the top of the hot press mold plunger 67. The furnace chamber is then sealed and evacuated to between 50 and 200 mTorr. The apparatus in the furnace chamber is heated to a temperature between 65 °C and 1000 °C, and at this time a pressure is applied to the hot press mold plunger 67 via the hydraulic press plunger in contact therewith. The initial pressure applied is between 5 and 20 tons. When the device 65 is heated to 14 〇〇. (The temperature between 1900 ° C is preferably between 1500 and 1550 ° C. The plunger pressure is slowly increased to a pressure between 10 and 200 tons. The final plunger pressure is dependent on the contained The size and geometry of the splash target containing the precious metal. The device 65 is maintained at the above temperature and the plunger pressure between 15 and 240 minutes, preferably between 2 and 6 minutes. After the time, both the plunger pressure and the temperature are lowered until the device 65 reaches the ambient temperature and pressure, and once the furnace has cooled to the ambient temperature, the vacuum level is raised to the ambient pressure. Figure 7 illustrates the completion of the hot press. 6 is a cross section of the apparatus 70. As can be seen in the drawings, the sputter material has been incorporated into the cut grooves of the bottom plate 73 to form 95°/ which is greater than the theoretical density of the sputter material. The density of the extinguishing clock region 74. After the graphite mold plunger 77 is removed, the sputtered target preform containing the precious metal consisting of the deposited sputtering material and the bottom plate 73 is removed from the hot pressing die 75. Connected to-13-200940216, using CNC milling (milling), diamond grinding or electric discharge machining (EDM) cutting the preform to the final size. In some applications, the carbon content of the material containing the precious metal must be maintained at a level other than f, in the mold The inner surface is lined with graphite and ί ί Η & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & One benefit is when the sputtering target system is used. $Used can be used to produce, (4)
板。藉此，可進-步減少在製程中所使用3 有貝金屬之濺鍍材料數量， 之3 之耐火金屬或合金底板之成本。 鍍靶的製程可被重覆數次。 β的複合 益處 常 使用本發明生產含有貴金屬之賤鑛歡之再一、 係為可實現在含有貴金屬之材料之氧含量必:益board. Thereby, the cost of the refractory metal or alloy base plate of the 3 kinds of sputtered metal used in the process can be further reduced. The plating process can be repeated several times. The compounding benefit of β often uses the present invention to produce a noble metal containing noble metal, which is capable of realizing the oxygen content of the material containing the precious metal.
低:嫂在f壓製程期間’由於氧氣係暴露於在真f 石墨模具中，其係提供石墨模具内一極度減^ =之 件’即使在模具表面係排列M〇或其它耐火金2氣條 此，氧氣將從含有貴金屬之材料移除。此=如 (reducing condition)可使含有責金屬之材料之=條件 低到特定準位以下’即使一開始之含有貴金屬之：量降 氧含量係超過上述特定值亦同。其它諸如熱 二^之 阻 減 之製程並不會具有上述特徵’其熱均愿製程係藉 (containment)於密封金屬罐中而含有貴金屬之材料= -14- 200940216 壓條件隔離出。上述特徵可提供含有貴金屬之材料之一 開始具有之氧含量係為廣範圍之使用，使貴金屬材料來 源可具有較大的彈性，因此降低成本。 下列例子係說明本發明之特定實施例，但並非因此 以任何方式侷限本發明。 範例1 利用所揭示之發明，製造具有Mo底板之2.03英吋 $ 直徑及0.31英吋厚之圓形Ru複合濺鍍靶。利用車床切 削2.03英吋直徑及0.25英吋厚之Mo片，藉此以提供一 與Mo片直徑同圓心之具有深度0.115英吋深、頂部直徑 1.84英吋與底部直徑1.55英吋之凹洞（形成錐台形 (frustum shape))。將經切削之Mo片配置於石墨熱壓模 具中，並將100克Ru粉末倒入模具凹洞中，以填滿Mo 片之凹洞並覆蓋其頂部。接著將石墨模具柱塞配置於模 具凹洞中，並放於Ru粉末之頂部上。 〇 其後，將模具裝置配置在液壓機中，並以數百磅之 負載來加壓以預壓緊（pre-compass) Ru粉末。接著將模具 裝置配置在真空熱壓機中，並在200 mTorr真空準位及 500 psi下以1525 °C處理0.5小時。在熱壓後，自熱壓機 移走Ru/Mo複合片並切削表面，以助於目視檢測。 此部分之目視檢測指出在熱壓製程期間，Ru及Mo結合 在一起彼此並沒有發生顯著地反應，係表示化學相容 性。此外，注意到任一材料中均無裂縫，係表示機械相 容性。此複合部分接著被配置於放電加工（EDM)機器中 -15- 200940216 並被切成片狀，以檢測複合物之剖面。目視及顯微鏡檢 測顯示其沒有發生顯著的反應，且在複合物中沒有出現 裂縫或間隙，進一步表示此二材料間之化學及機械相容 性。 為了檢查複合物之Ru部分的密度，配置一複合物 斷片於EDM機器中，以及自複合物切下一 0.701英吋乘 0.537英吋乘0.185英吋厚之尺寸且不含Mo之Ru片。 利用此片狀物之物理尺寸及重量決定其密度。可發現自 Ru/Mo複合物切下之Ru片的密度為Ru之理論密度的 98.9%，其為適合於含有貴金屬之濺鑛乾應用中之密度。 用以製造此複合濺鍍靶之Ru數量為100克，其係 少於用以製造相同幾何形狀之純Ru濺鑛靶所需數量 (202 克）的 50%。 範例2 利用所揭示之發明，製造具有Nb底板之2.03英吋 直徑及0.31英吋厚之圓形Ru複合濺鍍靶。利用車床切 削2.03英吋直徑及0.25英吋之Nb片，藉此以提供一與 Nb片直徑同圓心之具有深度0.115英吋深、頂部直徑 1.84英吋與底部直徑1.55英吋之凹洞（形成錐台形）。將 經切削之Nb片配置於石墨熱壓模具中，並將100克的 Ru粉末倒入模具凹洞中，以填滿Nb片中之凹洞並覆蓋 其頂部。接著，將石墨模具柱塞配置於模具凹洞中，並 放於Ru粉末之頂部上。 -16 - 200940216 其後，將模具裝置配置在液壓機中，並以數百磅之 負載來加壓以預壓緊Ru粉末。接著，將模具裝置配置 在真空熱壓機中，並在200 mTorr真空準位及500 psi下 以1525 °C處理0.5小時。在熱壓後，自熱壓機移走Ru/Nb 複合片並切削表面，以助於目視檢測。 此部分之目視檢測指出在熱壓製程期間，Ru及Nb結合 在一起彼此並沒有發生顯著地反應，係表示化學相容 性。此外，注意到任一材料中均無裂縫，係表示機械相 ❹ 容性。此複合部分接著被配置於放電加工機器中並被切 成片狀，以檢測複合物之剖面。目視及顯微鏡檢測顯示 其沒有發生顯著的反應，且在複合物中沒有出現裂縫或 間隙，進一步表示此二材料間之化學及機械相容性。 用以製造此複合濺鍍靶之Ru數量為100克，其係 少於用以製造相同幾何形狀之純Ru濺鍍靶所需數量 (202 克）的 50%。 ❹ 範例3 利用所揭示之發明，製造具有Ta底板之2.03英吋 直徑及0.31英吋厚之圓形Ru複合濺鍍靶。利用車床切 削2.03英吋直徑及0.25英吋之Ta片，藉此以提供一與 Ta片直徑同圓心之具有深度0.115英吋深、頂部直徑1.84 英吋與底部直徑1.55英吋之凹洞（形成錐台形）。將經切 削之Ta片配置於石墨熱壓模具中，並將100克的Ru粉 末倒入模具凹洞中，以填滿Ta片中之凹洞並覆蓋其頂 -17- 200940216 部。接著，將石墨模具柱塞配置於模具凹洞中，並放於 Ru粉末之頂部上。 其後，將模具裝置配置在液壓機中，並以數百磅之 負載來加壓以預壓緊Ru粉末。接著，將模具裝置配置 在真空熱壓機中，並在200 mTorr真空準位及500 psi下 以1525 °C處理0.5小時。在熱壓後，自熱壓機移走Ru/Ta 複合片並切削表面，以助於目視檢測。 此部分之目視檢測指出在熱壓製程期間，Ru及Ta結合 在一起彼此並沒有發生顯著地反應，係表示化學相容 性。此外，注意到任一材料中均無裂縫，係表示機械相 容性。此複合部分接著被配置於放電加工機器中並被切 成片狀，以檢測複合物之剖面。目視及顯微鏡檢測顯示 其沒有發生顯著的反應，且在複合物中沒有出現裂縫或 間隙，進一步表示此二材料間之化學及機械相容性。 用以製造此複合濺鍍靶之Ru數量為100克，其係 少於用以製造相同幾何形狀之純Ru濺鍍靶所需數量 (202 克）的 50%。 範例4 利用所揭示之發明，製造具有鈦(Ti)底板之2.03英吋 直徑及0.31英吋厚之圓形Ru複合濺鍍靶。利用車床切 削2.03英吋直徑及0.25英吋之Ti片，藉此以提供一與 Ti片直徑同圓心之具有深度0.115英吋深、頂部直徑1.84 -18- 200940216 英吋與底部直徑1.55英吋之凹洞（形成錐台形）。將經切 削之Ti片配置於石墨熱壓模具中，並將100克的Ru粉 末倒入模具凹洞中，以填滿Ti片中之凹洞並覆蓋其頂 部。接著，將石墨模具柱塞配置於模具凹洞中，並放於 Ru粉末之頂部上。 其後，將模具裝置配置在液壓機中，並以數百磅之 負載來加壓以預壓緊Ru粉末。接著，將模具裝置配置 在真空熱壓機中，並在200 mTorr真空準位及500 psi下 © 以1525 °C處理0.5小時。在熱壓後，自熱壓機移走Ru/Ti 複合片並切削表面，以助於目視檢測。 此部分之目視檢測指出在熱壓製程期間，Ru及Ti結合 在一起，然而於此二材料之間具有反應之證據，其沿著 此片之邊緣具有輕微的Ti侵蝕，係表示可能具化學不相 容性。注意到任一材料中均無裂縫，係表示可能具機械 相容性。此複合部分接著被配置於放電加工機器中並被 切成片狀，以檢測複合物之剖面。目視及顯微鏡檢測顯 © 示於二材料之間發生顯著的反應，其於Ru及Ti片之間 留下間隙，進一步表示利用此些條件下來處理複合物， 二材料之間係具化學不相容性。若使用Ti作為一底板， 則可將化學上及機械上與Ru及Ti二者均相容之諸如 Mo、Nb、Ta之障壁材料或其它材料被入Ti底板與Ru 粉末負載之間。障壁材料可為箔片（foil)、粉末層或塗佈 層的形式，且係可應用諸如錢鑛、火焰熔射（flame spraying)、或電漿熔射或其它塗佈技術之方法形成。 -19- 200940216 範例5 藉由將Ru粉末壓入包含一凹槽之長7.07英吋乘寬 2.30英吋乘厚度0.400英吋之Nb底板，其中凹槽在頂部 具有寬1.77英吋且在底部具有寬1.05英吋以及沿著底板 之長度具有深0.233英吋，以製備長7.07英吋乘寬2.30 英吋乘厚度0.5英吋之Ru/Nb複合物部分。將底板配置 在石墨模具中，並以715克的Ru粉末填滿凹槽並覆蓋 底板。將一模具柱塞配置於石墨模具中，使其與Ru粉 末接觸，並在嵌入真空熱壓機（其係大於前述四個例子中 所使用的真空熱壓機）前預壓緊模具。在真空熱壓機中， 模具係被加熱至1600 °C，並且對模具柱塞施加26 tons 的壓力。在冷卻至室溫前，模具與内含物係保持在此些 條件下四個小時。藉由保持此些部分於此溫度下一較長 時段，此例子及下述例子係可達到比前述四個例子還高 的密度。此複合部分之凹槽内的Ru之評估表示Ru之相 對密度為Ru的理論密度12.41 g/cc的99%。接著，將複 合物之Ru部分的表面沿著長度至0.200英吋最大深度切 削，以得一近似侵蝕凹槽。將複合物配置回石墨模具中， 並以400克Ru粉末填滿凹槽並覆蓋複合部分。將一模 具柱塞配置於石墨模具中，使其與Ru粉末接觸，並在 嵌入真空熱壓機前預壓緊模具。在真空熱壓機中，模具 係被加熱至1600 °C，並且對模具柱塞施加26 tons的壓 力。在冷卻至室溫前，模具與内含物係保持在此條件下 四個小時。壓入複合部分之模擬侵蝕凹槽内之Ru的評 估表示Ru之相對密度為其理論密度12.41 g/cc的99%。 -20- 200940216 這些結果表示再次使用用過的Ru/Nb複合濺鍍靶以產生 新的Ru/Nb濺鍍靶係具可能性。 範例6 將二用過Ru靶片配置於石墨熱壓模具中，其中每 一用過Ru靶片之尺寸係為7.07x1.09x0.25英吋，且具有 約為三角形且沿著每一帶（strip)的長度被侵蝕約0.24英 吋深之靶侵蝕凹槽。以此方式將500克的Ru粉末倒入 石墨模具中，以填滿侵蝕凹槽並完全覆蓋此帶片。模具 柱塞係配置於石墨模具中，使其與Ru粉末接觸，並在 嵌入真空熱壓機前預壓緊模具。在真空熱壓機中，模具 係被加熱至1600 °C，並且對模具柱塞施加20 tons的壓 力。在冷卻至室溫前，將模具與内含物保持在此條件下 四個小時。在熱壓後，此產生的部分係以密度為特徵， 並發現到其具有相對於Ru X光（x-ray)密度12.41 g/cc的 98%。藉由顯微鏡檢驗，用過靶與新材料之間的介面在 沒有強烈化學蝕刻下是無法識別的。這些結果表示用過 的Ru濺鍍靶可以新的Ru再填滿，並使用於濺鍍操作中。 以上所述僅依據專利法規發表最佳模式及較佳實施 例，而非為限制性者。任何未脫離本發明之精神與範疇， 而對其進行之等效修改或變更，均應包含於後附之申請 專利範圍中。 -21- 200940216 【圖式簡單說明】 第1圖係為具矩开彡+ 形或圓形幾何形狀之含有貴金屬之已 使用之機鍍靶之剖面圖； 第2圖係、為具矩 機錄之頂部視圖3有貝金屬之已使用之 第3圖係為具圓形 崎之頂部視圓狀之含有責金屬之已使用之 第4圖係為具一凹忐 Ο 應於具矩形或t形剖面圖，其凹陷處係對 蝕圖案； ^ 成何形狀之靶的濺鍍侵 第5圖係為本發明之第一 幾何形狀之含形或圓形任一 v <機鍍靶之剖面圖，· 第6圖糸為將濺鑛材料熱壓以合 〇 處内前之熱麼模具裝置；=底板表面之凹陷 第7圖係、為熱壓後之第6圖之熱壓模具裝置。 【主要元件符號說明】 1〇 :濺鍍靶； 12 :侵儀凹槽； 20 ··濺鍍靶； 22 :侵银凹槽； 30 :濺鍍靶； 22- 200940216 32 :侵蝕凹槽； 40 :底板； 41 :頂部表面； 42 :凹陷處； 50 :複合濺鍍靶； 51 :濺鍍材料； 52 :濺鍍區域； 53 :底板材料； 〇 60 :底板； 62 :經切削凹槽； 64 :石墨熱壓模具； 65 :裝置； 66 :濺鑛材料； 67 :石墨熱壓模具柱塞； 70 :裝置； 73 :底板； ❿ 74 :濺鍍區域； 75 :熱壓模具；以及 77 :石墨模具柱塞。 -23-Low: 嫂 During the f-pressing process 'Because the oxygen system is exposed to the true f graphite mold, it provides a piece of extreme reduction in the graphite mold' even if the mold surface is arranged in M〇 or other refractory gold 2 gas strips. Thus, oxygen will be removed from the material containing the precious metal. This ============================================================================================= Other processes such as heat reduction do not have the above characteristics. The heat-respecting process is contained in a sealed metal can and the material containing the precious metal is -14-200940216. The above features can provide one of the materials containing the precious metal. The oxygen content initially has a wide range of uses, so that the precious metal material source can have greater elasticity, thus reducing the cost. The following examples are illustrative of specific embodiments of the invention, but are not intended to limit the invention in any way. Example 1 Using the disclosed invention, a circular Ru composite sputtering target having a Mo backplane of 2.03 inch diameter and a thickness of 0.31 inch was fabricated. A 2.03 inch diameter and 0.25 inch thick Mo piece was cut by a lathe to provide a hole having a depth of 0.115 inches deep, a top diameter of 1.84 inches, and a bottom diameter of 1.55 inches, which is the same as the diameter of the Mo piece ( Forming a frustum shape). The cut Mo piece was placed in a graphite hot press mold, and 100 g of Ru powder was poured into the mold cavity to fill the cavity of the Mo piece and cover the top. The graphite mold plunger is then placed in the mold cavity and placed on top of the Ru powder. Thereafter, the mold unit was placed in a hydraulic press and pressurized with a load of several hundred pounds to pre-compass the Ru powder. The mold unit was then placed in a vacuum hot press and treated at 1525 °C for 0.5 hour at a vacuum level of 200 mTorr and 500 psi. After hot pressing, the Ru/Mo composite sheet was removed from the hot press and the surface was cut to aid visual inspection. Visual inspection of this section indicated that Ru and Mo did not significantly react with each other during the hot pressing process, indicating chemical compatibility. In addition, it is noted that there is no crack in any of the materials, indicating mechanical compatibility. This composite portion is then placed in an electrical discharge machining (EDM) machine -15-200940216 and cut into sheets to detect the profile of the composite. Visual and microscopic examination showed no significant reaction and no cracks or gaps in the composite, further indicating the chemical and mechanical compatibility between the two materials. In order to check the density of the Ru portion of the composite, a composite fragment was placed in an EDM machine, and a Ru film of 0.701 inch by 0.537 inch by 0.185 inch thick and containing no Mo was cut from the composite. The density is determined by the physical size and weight of the sheet. It can be found that the density of the Ru sheet cut from the Ru/Mo composite is 98.9% of the theoretical density of Ru, which is a density suitable for use in splash dry applications containing precious metals. The amount of Ru used to make this composite sputter target is 100 grams, which is less than 50% of the amount (202 grams) required to make a pure Ru splash target of the same geometry. Example 2 Using the disclosed invention, a circular Ru composite sputtering target having a Nb base plate of 2.03 inch diameter and 0.31 inch thick was fabricated. A 2.03 inch diameter and 0.25 inch Nb piece was cut by a lathe to provide a hole having a depth of 0.115 inches deep, a top diameter of 1.84 inches and a bottom diameter of 1.55 inches, which is the same as the diameter of the Nb piece. Frustum shape). The cut Nb sheet was placed in a graphite hot press mold, and 100 g of Ru powder was poured into the mold cavity to fill the recess in the Nb sheet and cover the top. Next, the graphite mold plunger was placed in the mold cavity and placed on top of the Ru powder. -16 - 200940216 Thereafter, the mold unit was placed in a hydraulic press and pressurized with a load of several hundred pounds to pre-compact the Ru powder. Next, the mold unit was placed in a vacuum hot press and treated at 1525 ° C for 0.5 hour at a vacuum level of 200 mTorr and 500 psi. After hot pressing, the Ru/Nb composite sheet was removed from the hot press and the surface was cut to aid visual inspection. Visual inspection of this section indicated that Ru and Nb did not significantly react with each other during the hot pressing process, indicating chemical compatibility. In addition, it is noted that there is no crack in any of the materials, indicating mechanical compatibility. This composite portion is then placed in an electric discharge machine and cut into sheets to detect the cross section of the composite. Visual and microscopic examination showed no significant reaction and no cracks or gaps in the composite, further indicating the chemical and mechanical compatibility between the two materials. The amount of Ru used to make this composite sputter target is 100 grams, which is less than 50% of the amount (202 grams) required to make a pure Ru sputter target of the same geometry.范例 Example 3 Using the disclosed invention, a circular Ru composite sputtering target having a Ta base plate of 2.03 inch diameter and 0.31 inch thick was fabricated. A 2.03 inch diameter and 0.25 inch piece of Ta was cut by a lathe to provide a hole with a depth of 0.115 inches deep, a top diameter of 1.84 inches and a bottom diameter of 1.55 inches, which is the same as the diameter of the Ta piece. Frustum shape). The cut Ta piece was placed in a graphite hot press mold, and 100 g of Ru powder was poured into the mold cavity to fill the pit in the Ta piece and cover the top -17-200940216. Next, the graphite mold plunger was placed in the mold cavity and placed on top of the Ru powder. Thereafter, the mold device was placed in a hydraulic press and pressurized with a load of several hundred pounds to pre-compact the Ru powder. Next, the mold unit was placed in a vacuum hot press and treated at 1525 ° C for 0.5 hour at a vacuum level of 200 mTorr and 500 psi. After hot pressing, the Ru/Ta composite sheet was removed from the hot press and the surface was cut to aid visual inspection. Visual inspection of this section indicated that Ru and Ta did not significantly react with each other during the hot pressing process, indicating chemical compatibility. In addition, it is noted that there is no crack in any of the materials, indicating mechanical compatibility. This composite portion is then placed in an electric discharge machine and cut into sheets to detect the cross section of the composite. Visual and microscopic examination showed no significant reaction and no cracks or gaps in the composite, further indicating the chemical and mechanical compatibility between the two materials. The amount of Ru used to make this composite sputter target is 100 grams, which is less than 50% of the amount (202 grams) required to make a pure Ru sputter target of the same geometry. Example 4 Using the disclosed invention, a circular Ru composite sputtering target having a titanium (Ti) substrate of 2.03 inch diameter and a thickness of 0.31 inch was fabricated. A 2.03 inch diameter and 0.25 inch Ti piece was cut by a lathe to provide a depth of 0.115 inches deep with the diameter of the Ti piece, a top diameter of 1.84 -18-200940216 inches and a bottom diameter of 1.55 inches. A cavity (forming a truncated cone shape). The cut Ti piece was placed in a graphite hot press mold, and 100 g of Ru powder was poured into the mold cavity to fill the pit in the Ti piece and cover the top portion thereof. Next, the graphite mold plunger was placed in the mold cavity and placed on top of the Ru powder. Thereafter, the mold device was placed in a hydraulic press and pressurized with a load of several hundred pounds to pre-compact the Ru powder. Next, the mold unit was placed in a vacuum hot press and treated at 1525 ° C for 0.5 hour at a vacuum level of 200 mTorr and 500 psi. After hot pressing, the Ru/Ti composite sheet was removed from the hot press and the surface was cut to aid visual inspection. The visual inspection of this part indicates that Ru and Ti are combined during the hot pressing process, however there is evidence of reaction between the two materials, which has a slight Ti attack along the edge of the sheet, indicating that it may be chemically compatibility. Note that there is no crack in any of the materials, indicating that it may be mechanically compatible. This composite portion is then placed in an electric discharge machine and cut into sheets to detect the cross section of the composite. Visual and microscopic examination showed a significant reaction between the two materials, leaving a gap between the Ru and Ti sheets, further indicating that the composite was treated under these conditions, and the two materials were chemically incompatible. Sex. If Ti is used as a substrate, barrier materials such as Mo, Nb, Ta, which are chemically and mechanically compatible with both Ru and Ti, or other materials can be placed between the Ti substrate and the Ru powder load. The barrier material can be in the form of a foil, a powder layer or a coating layer and can be formed by methods such as money ore, flame spraying, or plasma spraying or other coating techniques. -19- 200940216 Example 5 By pressing Ru powder into a Nb base plate containing a groove of 7.07 inches long and 2.30 inches wide by 0.400 inch thick, wherein the groove has a width of 1.77 inches at the top and has a bottom at the bottom. It is 1.05 inches wide and has a depth of 0.233 inches along the length of the base plate to prepare a Ru/Nb composite portion having a length of 7.07 inches by 2.30 inches and a thickness of 0.5 inches. The bottom plate was placed in a graphite mold and filled with 715 grams of Ru powder to cover the bottom plate. A mold plunger was placed in a graphite mold to be brought into contact with the Ru powder, and the mold was pre-compressed before being embedded in a vacuum hot press which was larger than the vacuum hot press used in the above four examples. In a vacuum hot press, the mold was heated to 1600 ° C and a pressure of 26 tons was applied to the mold plunger. The mold and contents were maintained under these conditions for four hours before cooling to room temperature. By maintaining such portions at this temperature for a longer period of time, this example and the following examples can achieve higher densities than the four examples described above. The evaluation of Ru in the groove of this composite portion indicates that the relative density of Ru is 99% of the theoretical density of Ru of 12.41 g/cc. Next, the surface of the Ru portion of the composite was cut along the length to a maximum depth of 0.200 inch to obtain an approximately etched groove. The composite was placed back into the graphite mold and the grooves were filled with 400 grams of Ru powder and covered with the composite portion. A mold plunger is placed in the graphite mold to contact the Ru powder and pre-compressed before being embedded in the vacuum hot press. In a vacuum hot press, the mold was heated to 1600 ° C and a pressure of 26 tons was applied to the mold plunger. The mold and contents were maintained under these conditions for four hours before cooling to room temperature. The evaluation of Ru in the simulated erosion groove pressed into the composite portion indicates that the relative density of Ru is 99% of its theoretical density of 12.41 g/cc. -20- 200940216 These results indicate the possibility of reusing a used Ru/Nb composite sputter target to create a new Ru/Nb sputter target. Example 6 A dual-use Ru target was placed in a graphite hot press mold, wherein each used Ru target had a size of 7.07 x 1.09 x 0.25 inches and had approximately a triangle and along each strip (strip) The length of the target is eroded by a target erosion groove of about 0.24 inches. In this way, 500 grams of Ru powder was poured into a graphite mold to fill the etched grooves and completely cover the strip. The mold plunger is placed in a graphite mold to contact the Ru powder and pre-compressed before being embedded in the vacuum hot press. In a vacuum hot press, the mold was heated to 1600 ° C and a pressure of 20 tons was applied to the mold plunger. The mold and contents were kept under this condition for four hours before cooling to room temperature. After hot pressing, the resulting portion was characterized by density and was found to have 98% relative to the Ru X-ray (x-ray) density of 12.41 g/cc. By microscopic examination, the interface between the used target and the new material is unrecognizable without strong chemical etching. These results indicate that the used Ru sputter target can be refilled with new Ru and used in the sputtering operation. The above description is based on the best mode and preferred embodiments of the patents, and is not intended to be limiting. Any equivalent modifications or alterations to the spirit and scope of the invention are intended to be included in the scope of the appended claims. -21- 200940216 [Simple description of the diagram] Figure 1 is a cross-sectional view of a machine-plated target containing a noble metal with a rectangular opening + shape or a circular geometry; Figure 2 is a machine with a moment machine The top view 3 has the use of shell metal. The third figure is the top of the circle with a rounded shape. The fourth picture is used. The fourth figure is a concave shape. It should be rectangular or t-shaped. In the cross-sectional view, the depression is a pattern of erosion; ^ The sputtering of the target of the shape is the first geometry of the invention, which is a shape or a circle of any v < machine-plated target Fig. 6 is a hot-pressing mold device for hot-pressing the splashing material to heat the mold in front of the joint; the recessed surface of the bottom plate is the heat-pressing mold device of Fig. 6 after hot pressing. [Main component symbol description] 1〇: sputtering target; 12: intrusion groove; 20 · sputtering target; 22: silver intrusion groove; 30: sputtering target; 22- 200940216 32: erosion groove; : bottom plate; 41: top surface; 42: recessed portion; 50: composite sputtering target; 51: sputtering material; 52: sputtering area; 53: bottom plate material; 〇60: bottom plate; 62: cut groove; : graphite hot pressing mold; 65: device; 66: splashing material; 67: graphite hot pressing mold plunger; 70: device; 73: bottom plate; ❿ 74: sputtering zone; 75: hot pressing die; and 77: graphite Mold plunger. -twenty three-