KR102332893B1 - Method for a variety metal bonding on precious metals sputtering target decrease raw materials and the sputtering target prepared thereby - Google Patents

Abstract

The present invention relates to a sputtering target in which the amount of precious metal used is reduced by using a three-dimensional profile of the waste metal target used in the sputtering process, and a method for manufacturing the same.

Description

Manufacturing method of dissimilar metal bonding type noble metal sputtering target for reducing raw materials and precious metal sputtering target manufactured therefrom

The present invention relates to a precious metal sputtering target used in a sputtering process and a method for manufacturing the same, and more particularly, to a portion that is actually used and consumed, including precious metal, which can reduce raw materials It relates to a new method of manufacturing a sputtering target and a sputtering target manufactured therefrom.

The sputtering process is a process in which ions accelerated by plasma collide with a target and deposit atoms protruding from the target on the surface of a peripheral substrate to form a thin film layer. Forming an electrode layer or a seed layer on a wafer, glass, and substrate used for manufacturing semiconductor memories (RAM, MRAM, FeRAM), heads (MR, TMR), and capacitors by sputtering process can do.

However, in the sputtering process, the amount of the target actually consumed from the target is only about 30% of the total, and most of the target remains unused. The waste target corresponding to about 70% of the remaining consumed in this way may be discarded or otherwise recovered and used to manufacture a new sputtering target.

Meanwhile, a recycling target using a conventional waste target may be prepared by dissolving or pulverizing the recovered waste target and then sintering. However, there is a problem in that a lot of time and money are consumed while going through a complicated process in the manufacturing process. In addition, there is also a problem that impurities may be included when pulverizing the waste target, which may affect the purity of the manufactured recycling target. In addition, since strong acid is used in the process of pulverizing the waste target, the risk is high, and a large amount of waste liquid and carbon dioxide may be generated, which may cause environmental pollution problems. In addition, since indium (In), a rare metal used when bonding a backing plate and a target, is completely lost when the waste target is recovered, there is a problem in that it is not economical.

The present invention has been derived to solve the above problems, and finally replaces the unused part of the noble metal sputtering target for sputtering with another metal, or by changing the shape thereof to newly manufacture only the part used in the sputtering process, noble metal An object of the present invention is to provide an economical sputtering target and a method for manufacturing the same while reducing usage.

In order to achieve the above object, the present invention comprises the steps of: (i) three-dimensional profiling the consumption portion of the sputtering lung target; (ii) manufacturing a molding mold and a sintering mold identical to the three-dimensionally profiled consumption part and having a predetermined shape; (iii) forming a molded body by filling and molding the precious metal raw material powder in the molding mold; (iv) forming a sintered body by heat-treating the compact; and (v) forming a first metal layer of a different kind on one surface of the sintered body on which a predetermined shape is formed, and planarizing the other surface of the first metal layer.

Here, the content of the noble metal in the sputtering target includes as much as the amount of consumption of the sputtering waste target, but is preferably a raw material saving type that is 70% by weight or less relative to the total weight of the new sputtering target using 100% of the noble metal.

In addition, the present invention (a) a sintered body containing a noble metal as a deposition material consumed by sputtering; (b) is formed on one surface of the sintered body, and includes a first metal layer different in composition from the sintered body, and the interface where the sintered body and the first metal layer are in contact is formed by three-dimensional profiling of the consumption part of the sputtering waste target It has a predetermined shape, and provides a noble metal sintered body, characterized in that the other surface of the first metal layer is planarized.

Furthermore, the present invention provides the above-mentioned noble metal sintered body; and a backing bonded to the flat surface of the first metal layer to support the sintered body It provides a noble metal sputtering target comprising a; plate.

Here, the sputtering target may be used for forming a thin film layer of a semiconductor or magnetic recording device media or for semiconductor sputtering.

Since the noble metal sputtering target according to the present invention is newly manufactured only the part used in the actual sputtering process, the precious metal part of the waste target part remaining in the sputtering process; and the amount of the noble metal part used in manufacturing the sputtering target can be reduced. unit price can be lowered.

In addition, according to the present invention, it is possible to reduce the cost of recovering the waste target by not directly reusing the already used waste target.

In addition, according to the present invention, it is possible to reduce problems such as complexity of the manufacturing process and environmental pollution due to the use of the waste target.

1 shows a sputtering target according to an embodiment of the present invention.
2 shows a sputtering target according to another embodiment of the present invention.
3 shows a manufacturing process of a sputtering target according to an embodiment of the present invention.
Figures 4a to 4d are photographs of three-dimensional profiling (3D Profiling) of the consumption part of the lung target used in Examples 1 to 4 of the present invention.
5A and 5B show the deposition rate measured after sputtering the Ta target prepared in Examples 1 and 2 and Comparative Example 1 with 1,000 W power and the sheet resistance measured by forming a unit film of 1,000 Å. It is the result.
6A and 6B are results of measuring the thickness and sheet resistance of the thin film according to the sputtering time of Ta targets prepared in Examples 1 and 2 and Comparative Example 1 of the present invention.
<Explanation of code>
100: precious metal sputtering target 110: precious metal sintered body
120: first metal layer 130: backing plate

EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated.

In general, the type of sputtering target used in a sputtering company has several materials according to its purpose and method, and the area used for each material is limited. The part used is different depending on the sputtering equipment or the user, but since it is used continuously without changing the equipment for one material, the shape of the remaining waste target is always the same.

Therefore, in the present invention, by 3D profiling the used part of the waste sputtering target used by the sputtering company, only the actually used part is manufactured by pressure sintering to manufacture a sintered body having a predetermined shape, and this sintered body is used in other inexpensive dissimilar metals; And/or it is characterized in that it is used as a sputtering target by bonding with a backing plate.

Since only the part used in the actual sputtering process is manufactured through the above manufacturing method, it is possible to reduce the amount of precious metal constituting the remaining part of the waste target after the sputtering process, as well as reduce the amount of raw material of the precious metal raw material used for the initial target manufacturing. Because it can be reduced to, it is possible to reduce the selling price of the expensive sputtering target to a certain extent. In addition, it is possible to reduce the cost of collecting the waste target.

<Sintered compact and sputtering target>

The noble metal-based composite sintered body 100 according to an embodiment of the present invention is formed on one surface of the noble metal sintered body 110 and the sintered body as shown in FIG. 1 , and a first metal layer 120 having a different composition from the sintered body ) is included.

The sintered body 100 for the sputtering target has the same three-dimensional profile as the consumed part of the waste target already used in the sputtering process, and preferably has the shape of any one of the following FIGS. 4(a) to 4(d) can have Accordingly, in the sintered body 100 for the sputtering target, only the amount of precious metal used in the sputtering process and consumed is used. A noble metal, which is a deposition material, is not used in the portion remaining after being consumed, and a low-cost first metal layer that is not consumed by sputtering is substituted. In this respect, it is different from a conventional sputtering target in which a metal of the same material is used for both the consumed portion and the remaining portion after consumption.

In the present invention, the content of the noble metal in the sputtering target, including as much as the amount of consumption of the sputtering waste target, may be 70% by weight or less based on the total weight of the new sputtering target using 100% of the noble metal.

The noble metal sintered body 100 is formed from noble metal raw material powder.

Non-limiting examples of the noble metal raw material powder that can be used include gold (Au), silver (Ag), platinum (Pt), indium (In), iridium (Ir), ruthenium (Ru), tantalum (Ta), chromium (Cr) ), cobalt (Co), copper (Cu) and tungsten (W), or one kind of noble metal powder selected from the group consisting of, or an alloy powder of two or more of the noble metals.

In this case, as the noble metal raw material powder, a novel noble metal raw material powder may be used, or a powder regenerated by pulverizing a noble metal-based waste target according to a conventional method in the art may be used.

A first metal layer 120 is formed on one surface of the sintered body 110 , and the three-dimensional profile of the sintered body 110 corresponds to meshing with a predetermined shape surface formed thereon.

More specifically, it is preferable that the first metal layer 120 has a predetermined three-dimensional profile shape on one surface in contact with the noble metal sintered body 110 , and the other surface is flattened so as to be bonded to the backing plate 130 .

The first metal layer is not particularly limited as long as it is different from the sintered body component, and for example, copper (Cu), aluminum (Al), indium (In), zinc (Zn), tin (Sn), iron (Fe), or these A combination of one or more of these may be used. Here, metals such as copper (Cu) and aluminum (Al) are preferable to use because they exhibit the best bonding strength in processes such as spraying when bonding to a sintered body and are inexpensive.

In addition, a noble metal-based sputtering target 100 according to another embodiment of the present invention, as shown in FIG. 2, a noble metal sintered body 110; and a backing bonded to the flat surface of the first metal layer 120 to support the sintered body. plate 130; includes.

Here, the backing plate 130 is a substrate for supporting the sintered body 110 for the sputtering target, and a conventional backing plate known in the art may be used without limitation. At this time, the material constituting the backing plate and the shape thereof are not particularly limited.

<Manufacturing method of sputtering target>

Hereinafter, a method for manufacturing a sputtering target according to an embodiment of the present invention will be described. However, it is not limited only by the following manufacturing method, and the steps of each process may be modified or selectively mixed as needed.

For a preferred embodiment of the manufacturing method, (i) three-dimensional profiling the consumption portion of the sputtering lung target; (ii) manufacturing a molding mold and a sintering mold identical to the three-dimensionally profiled consumption part and having a predetermined shape; (iii) forming a molded body by filling and molding the precious metal raw material powder in the molding mold; (iv) forming a sintered body by heat-treating the compact; and (v) forming a different first metal layer on one surface on which a predetermined shape is formed of the sintered body, and planarizing the other surface of the first metal layer.

Here, the manufacturing method may further include (vi) bonding a backing plate to the flat surface of the first metal layer.

Meanwhile, FIG. 3 is a conceptual diagram illustrating a method of manufacturing a noble metal-based sputtering target according to the present invention in each step. Hereinafter, the manufacturing method is divided into each process step with reference to FIG. 3 and described as follows.

(1) Step of securing a three-dimensional profile of the lung target (hereinafter referred to as 'S10 step')

This step is a step to secure a three-dimensional profile from the waste target used in the sputtering process. After the sputtering process, not all of the target is used, but only a part of the target is used and the rest is left as it is. Therefore, the used lung target is provided with a consumption portion having a three-dimensional profile with a predetermined shape (bending) on one surface as shown in Fig. 3 (a). This step is a step of securing a three-dimensional profile from the used lung target (Fig. 3 (a) (Fig. 3 (b)). In order to secure the correct amount and site of use, one or more multiple times for the same lung target. It is preferable to measure with

(2) Forming mold and sintering mold manufacturing (hereinafter referred to as 'S20 step')

This step is a step of manufacturing a molding mold and a sintering mold having the same three-dimensional profile as the sputtering waste target as shown in Figure 3 (c). The forming mold and the sintering mold are consumed after securing a three-dimensional profile (Fig. 3(b)) from the sputtering waste target (Fig. 3(a)) so that only the consumed part of the waste target can be newly manufactured. It can be manufactured by calculating the dimensions of .

(3) forming a molded body (hereinafter referred to as 'step S30')

This step is a step of forming a molded article having a different shape by filling the mold with precious metal raw material powder, flattening it, and pressing it (see Fig. 3(d)).

As described above, the molding mold is formed in the same shape as the consumption part of the precious metal waste target. The material of the forming mold that can be used in manufacturing the molded body is not particularly limited, but may be a tool steel (Steel Tool Die, SKD or STD) steel type, a stainless steel steel type, or the like.

The usable metal powder is not particularly limited as long as it is a conventional noble metal raw material powder used as a deposition material in the sputtering process, and for example, gold (Au), silver (Ag), platinum (Pt), indium (In), iridium (Ir), ruthenium (Ru), tantalum (Ta), chromium (Cr), cobalt (Co), copper (Cu) and tungsten (W) is one kind of noble metal powder or two or more of the noble metal An alloy powder is preferred.

In addition, as the noble metal raw material powder, a novel noble metal raw material powder or a powder regenerated by pulverizing a noble metal-based waste target may be used.

Conditions for pressing the noble metal powder filled in the molding mold are not particularly limited, but for example, it is preferably carried out at a pressure in the range of 1 to 300 MPa for 1 to 60 minutes.

(4) Sintered body formation step (hereinafter referred to as 'S40 step')

As shown in Fig. 3 (e), this step is a step of charging the molded body prepared in step S30 in a sintering mold of the same shape and sintering under pressure to form a sintered body.

As described above, the sintering mold is formed in the same shape as the consuming part of the precious metal waste target. Materials of the sintering mold that can be used in manufacturing the sintered body are not particularly limited, but include carbon (C), molybdenum (Mo), tungsten (W), tantalum (Ta), niobium (Nb), zirconium (Zr) and platinum (Pt). It may be one metal selected from the group consisting of, or an alloy of two or more metals.

The method of sintering the compact charged in the sintering mold is not particularly limited, but for example, a hot press method, a hot isostatic press method, a spark plasma sintering method, a gas pressure sintering method ( Gas Pressure Sintering) and the like. It is preferable to use a hot press method in that the oxidized powder in the molded body can be reduced.

Conditions for sintering the compact charged in the sintering mold are not particularly limited, but the sintering time is preferably 1 to 20 hours, the sintering pressure is preferably 10 to 80 MPa, and the sintering temperature is 700 to 2,000 It is preferable that it is °C. In this case, a target having a high relative density and a small crystal grain size can be manufactured. Although the sintering temperature varies depending on the type of noble metal powder to be filled, it is preferable that the sintering temperature be equal to or less than 80% of the melting temperature (melting point, Tm) of the noble metal powder.

(5) Metal bonding (hereinafter referred to as 'S50 step')

In this step, the sintered body obtained in FIG. 3(e) is separated from the sintering mold (FIG. 3(f)), and as shown in FIG. Coating bonding is performed using this different inexpensive dissimilar metal (first metal).

Coating and bonding methods of coating and bonding different types of metals on the sintered body are not particularly limited, but for example, cold spray, thermal spray, arc spray or metal cladding. can be

The dissimilar metal component used as the first metal layer is not particularly limited, but is preferably copper (Cu) or aluminum (Al). In addition, conditions for bonding dissimilar metals are not particularly limited, and conditions known in the art may be appropriately adjusted.

One surface of the first metal layer formed as described above, that is, one surface of the first metal layer in contact with the sintered body has a predetermined shape formed by three-dimensional profiling of the consumption part of the sputtering waste target, and the other surface (the other surface) of the first metal layer is For bonding with the backing plate, it is preferable to have a flat surface.

(6) bonding step of sintered body and backing plate (hereinafter referred to as 'step S60')

This step is a step of bonding the flat surface of the first metal layer of the sintered body and a backing plate (BP) to engage each other as shown in FIG. 3(h).

The joint portion of the sintered body of the backing plate may be processed to coincide with the joint portion of the sintered body. In this case, the method of processing the backing plate is not particularly limited, but may be a process using one or more equipment selected from the group consisting of lathes, grinders, milling equipment, and computerized numerical control (CNC).

In general, a backing plate (BP) is used to fix the sputtering target to the equipment, and there are a backing plate integrated target or a target and a backing plate bonding target depending on the conditions and methods used. A method of bonding the noble metal target and the backing plate is not particularly limited, but indium (In) bonding or diffusion bonding may be used.

The indium bonding method is preferably used when bonding a low melting point (eg, 100°C or higher, less than 1,500°C) noble metal target such as gold (Au), silver (Ag), platinum (Pt), and the like. Although the conditions for the indium bonding are not particularly limited, it is preferably performed at a temperature of 100 to 300° C. for 1 to 5 hours.

In addition, the diffusion bonding method is preferably used when bonding a noble metal target with a high melting point (1,500 to 2,500° C. or higher) such as tantalum (Ta), tungsten (W), or the like. Although the conditions for the diffusion bonding are not particularly limited, it is preferably carried out at a pressure of 90 to 100 MPa at 500 to 1800 ° C.

The bonding method between the sintered body and the backing plate is not particularly limited, and the backing plate can be bonded according to any one of the above two methods regardless of the material (melting point of the raw material) according to the user's request.

As such, the present invention can reduce the amount of precious metal used in the target manufacturing by manufacturing the sputtering target by the above manufacturing method.

The noble metal sputtering target of the present invention prepared as described above is for forming a thin film layer of HDD, semiconductor memory (RAM, MRAM, FeRAM), head (MR, TMR), or magnetic recording device media (eg, hard disk platter). It can be used as a sputtering target, and can be used for forming wiring in a semiconductor process. In addition, it can be used to manufacture compounds, hardening materials, electrical contact materials, resistance materials, catalyst materials, photosensitive materials, or anticancer materials, and can be applied without limitation to other technical fields where noble metal-based targets can be usefully applied. have.

Hereinafter, the present invention will be described in detail by way of Examples, but the following Examples are only illustrative of one aspect of the present invention, and the scope of the present invention is not limited by the Examples.

[Example 1. Manufacturing method of tantalum (Ta) heteromorphic sputtering target]

(1) Three-dimensional profiling of Ta lung targets (3D Profiling)

A three-dimensional profile was obtained by obtaining a precious metal waste target used in the sputtering process (see FIGS. 4a to 4d). In order to accurately measure the consumption of the precious metal waste target, the same precious metal waste target was measured one or more times to measure the error of the three-dimensional profile (3D Profile).

(2) Forming mold and sintering mold manufacturing

A molding mold and a sintering mold were manufactured using the three-dimensional profile obtained in the above step. It can be manufactured by drawing a three-dimensional profile.

(3) forming a molded body

The molding mold prepared in (2) was filled with tantalum (Ta) metal powder, which is a target material, and flattened, and then maintained at a pressure of 250±50 MPa for 60±30 seconds to prepare a molded body.

(4) Formation of sintered body

By charging the molded body prepared in (3) to the sintering mold prepared in (2) above, at a pressure of 20±10 MPa, and at a temperature of 1900±100° C. for 6±2 hours, a hot pressing method ( It was pressure sintered with a hot press).

(5) Dissimilar metal bonding and coating

Bonding and coating of a predetermined shape (different shape) portion of the sintered body prepared in (4) (a portion not used in the sputtering process) was performed using Cu. In this example, Cu bonding was performed using thermal spray.

(6) BP conjugation

The surface of the dissimilar metal (first metal layer) was flatly processed using CNC to bond the sintered body and the backing plate to which the dissimilar metals were joined. Thereafter, the sintered body in which the backing plate and the flatly processed dissimilar metal (first metal layer) were joined was placed on a hot plate heated to 200±50° C. and joined with indium (In).

[Example 2. Manufacturing method of tantalum (Ta) heteromorphic sputtering target]

(1) Formation of a sintered body

A sintered body was prepared in the same manner as in (1) to (5) of Example 1.

(2) BP diffusion junctions

In order to join the sintered body in which the backing plate and the flat processed dissimilar metal (the first metal layer) are joined, the sintered body of the backing plate is processed to match the sintered body with a different shape using a CNC. Then, diffusion bonding was performed at a temperature of 800±100° C. and a pressure of 80±20 MPa for 4±2 hours using a hot isostatic press.

[Example 3. Manufacturing method of silver (Ag) heteromorphic sputtering target]

(1) Three-dimensional profiling of Ag lung targets (3D Profiling)

A three-dimensional profile was obtained by obtaining a precious metal waste target used in the sputtering process (see FIGS. 4a to 4d). In order to accurately measure the consumption of the precious metal waste target, the same precious metal waste target was measured one or more times to measure the error of the three-dimensional profile (3D Profile).

(2) Forming mold and sintering mold manufacturing

A molding mold and a sintering mold were manufactured using the three-dimensional profile obtained in the above step. It can be manufactured by drawing a three-dimensional profile.

(3) forming a molded body

The molding mold prepared in (2) was filled with silver (Ag) metal powder, a target material, and flattened, and then maintained at a pressure of 250±50 MPa for 60±30 seconds to prepare a molded body.

(4) Formation of sintered body

By charging the molded body prepared in (3) to the sintering mold prepared in (2) above, at a pressure of 20 ± 10 MPa, and at a temperature of 700 ± 100 ° C. for 12 ± 5 hours, a hot press method ( It was pressure sintered with a hot press).

(5) Dissimilar metal bonding and coating

Bonding and coating a predetermined shape (different shape) portion of the sintered body prepared in (4) (a portion not used in the sputtering process) was performed using Cu. In this example, Cu bonding was performed using cold spray.

(6) BP conjugation

The surface of the dissimilar metal (first metal layer) was flatly processed using CNC to bond the sintered body and the backing plate to which the dissimilar metals were joined. Thereafter, the sintered body in which the backing plate and the flatly processed dissimilar metal (first metal layer) were joined was placed on a hot plate heated to 200±50° C. and joined with indium (In).

[Example 4. Method of manufacturing gold (Au) heteromorphic sputtering target]

(1) Three-dimensional profiling of the Au lung target (3D Profiling)

A three-dimensional profile was obtained by obtaining a precious metal waste target used in the sputtering process (see FIGS. 4a to 4d). In order to accurately measure the consumption of the precious metal waste target, the same precious metal waste target was measured one or more times to measure the error of the three-dimensional profile (3D Profile).

(2) Forming mold and sintering mold manufacturing

A molding mold and a sintering mold were manufactured using the three-dimensional profile obtained in the above step. It can be manufactured by drawing a three-dimensional profile.

(3) forming a molded body

The molding mold prepared in (2) was filled with gold (Au) metal powder, a target material, and flattened, and then maintained at a pressure of 250±50 MPa for 60±30 seconds to prepare a molded body.

(4) Formation of sintered body

By charging the molded body prepared in (3) to the sintering mold prepared in (2) above, at a pressure of 20±10 MPa, and at a temperature of 800±100° C. for 12±5 hours, a hot pressing method ( It was pressure sintered with a hot press).

(5) Dissimilar metal bonding and coating

Bonding and coating a predetermined shape (different shape) portion of the sintered body prepared in (4) (a portion not used in the sputtering process) was performed using Cu. In this example, Cu bonding was performed using cold spray.

(6) BP conjugation

The surface of the dissimilar metal (first metal layer) was flatly processed using CNC to bond the sintered body and the backing plate to which the dissimilar metals were joined. Thereafter, the sintered body in which the backing plate and the flatly processed dissimilar metal (first metal layer) were joined was placed on a hot plate heated to 200±50° C. and joined with indium (In).

[Comparative Example 1]

A novel noble metal target without an anomaly portion made of the same component (Ta) as in Examples 1 and 2 was prepared.

[Comparative Example 2]

A novel noble metal target without an anomaly portion made of the same component (Ag) as in Example 3 was prepared.

[Comparative Example 3]

A novel noble metal target without an anomaly portion made of the same component (Au) as in Example 4 was prepared.

[Experimental Example 1] Measurement of reduction rate of precious metal usage

Examples 1 to 4 and Comparative Examples 1 to 3 were measured the weight of the noble metal used in the target manufacturing of the noble metal target and the noble metal usage reduction rate, the results are shown in Table 1 below.

Area (cm ³ ) Weight (g) Precious metal usage reduction rate (%) Examples 1-2 462.3 7,673.5 50.5 Comparative Example 1 934.3 15,508.5 Example 3 462.3 4,854.6 50.5 Comparative Example 2 934.3 9,810.3 Example 4 462.3 8,927.3 50.5 Comparative Example 3 934.3 18,041.6

As shown in Table 1, the weight of the noble metal used in the preparation of the target was about 7.7 kg for the Ta target prepared by Examples 1 and 2, and about 16 kg for the new noble metal target prepared by Comparative Example 1 could check

In addition, it was confirmed that the weight of the Ag target prepared in Example 3 was about 4.9 kg, and the weight of the novel noble metal target prepared in Comparative Example 2 was about 9.8 kg.

In addition, it was confirmed that the Au target prepared by Example 4 was about 8.9 kg, and the novel noble metal target prepared by Comparative Example 3 was about 18.0 kg.

Therefore, it was found that the noble metal target manufactured by Examples 1 to 4 can reduce the amount of precious metal used by about 50% compared to the novel noble metal target manufactured by Comparative Examples 1 to 3.

[Experimental Example 2] Thin film deposition rate and sheet resistance measurement

A sputtering process was performed using the Ta targets prepared in Examples 1-2 and Comparative Example 1, respectively. At this time, the deposition rate (Deposition Rate: Fig. 5(a)) of the thin film formed at a power of 1,000 W and the sheet resistance (Rs: Fig. 5(b)) of the unit film of 1,000 Å deposited under the same conditions were measured, and the results were measured, respectively. 5 is shown.

As shown in Figure 5, the noble metal target prepared by Examples 1 and 2 has a thin film deposition rate during the sputtering process It can be confirmed that the thin film deposition rate is the same as the thin film deposition rate formed with the novel noble metal target prepared by Comparative Example 1. There was (Fig. 5a).

In addition, in the noble metal targets prepared by Examples 1 and 2, the sheet resistance of the unit film (thin film with a thickness of 1,000 Å) during the sputtering process was almost the same. was possible (Fig. 5b).

[Experimental Example 3] Thin film thickness over time and thus sheet resistance measurement

A sputtering process was performed using the Ta targets prepared in Examples 1-2 and Comparative Example 1, respectively. At this time, the thickness and sheet resistance of the thin film were measured with time at a power of 1,000 W, and the results are shown in FIG. 6 .

As shown in FIG. 6, the thickness of the thin film according to the time during the sputtering process of the noble metal target manufactured by Examples 1 and 2 is almost the same as the thickness of the thin film formed with the novel noble metal target prepared by Comparative Example 1. was possible (Fig. 6a).

In addition, in the noble metal targets prepared in Examples 1 and 2, it was confirmed that the sheet resistance of the thin film formed with time during the sputtering process was the same as the sheet resistance of the thin film formed with the novel noble metal target prepared in Comparative Example 1 (Fig. 6b). .

Claims (18)

(i) three-dimensional profiling of the consumption portion of the sputtering lung target;
(ii) manufacturing a molding mold and a sintering mold identical to the three-dimensionally profiled consumption part and having a predetermined shape;
(iii) forming a molded body by filling and molding the precious metal raw material powder in the molding mold;
(iv) forming a sintered body by heat-treating the compact; and
(v) forming a heterogeneous first metal layer on one surface of the sintered body on which a predetermined shape is formed, and planarizing the other surface of the first metal layer
A method of manufacturing a noble metal sputtering target comprising a. According to claim 1,
The content of the noble metal in the sputtering target is included as much as the amount of consumption of the sputtering waste target, and the raw material saving type is 70% by weight or less based on the total weight of the new sputtering target using 100% of the noble metal Method of manufacturing a noble metal sputtering target, characterized in that it is . According to claim 1,
The noble metal raw material powder of step (iii) is gold (Au), silver (Ag), platinum (Pt), indium (In), iridium (Ir), ruthenium (Ru), tantalum (Ta), chromium (Cr), A method of manufacturing a noble metal sputtering target, characterized in that it is one or more metals selected from the group consisting of cobalt (Co) and copper (Cu) or alloy components thereof. According to claim 1,
The noble metal raw material powder of step (iii) is a method of manufacturing a noble metal sputtering target, characterized in that it is a powder regenerated by pulverizing a novel noble metal raw material powder or a noble metal-based waste target. According to claim 1,
The step (iv) is a method of manufacturing a noble metal sputtering target, characterized in that it is performed by a hot press method, a hot isostatic press method, a discharge plasma sintering method or a gas pressure sintering method. According to claim 1,
The step (iv) is a method of manufacturing a noble metal sputtering target, characterized in that the sintering for 1 to 20 hours under a pressure of 10 ~ 80 MPa and a temperature of 700 ~ 2000 ℃. According to claim 1,
The step (iv) is a method of manufacturing a noble metal sputtering target, characterized in that it is carried out at a temperature corresponding to 80% of the melting point of the noble metal raw material powder. According to claim 1,
The step (v) is flattened by bonding or coating the first metal material, but is performed by a method selected from the group consisting of cold spray, thermal spray and metal cladding. Method for producing a noble metal sputtering target, characterized in that. According to claim 1,
In step (v), the component of the first metal layer is at least one selected from the group consisting of copper (Cu), aluminum (Al), indium (In), zinc (Zn), tin (Sn), and iron (Fe). A method of manufacturing a noble metal sputtering target, characterized in that it is a metal or an alloy component thereof. According to claim 1,
The manufacturing method (vi) on the flat surface of the first metal layer, the manufacturing method of the noble metal sputtering target, characterized in that it further comprises the step of bonding a backing plate. 11. The method of claim 10,
The bonding step is a method of manufacturing a noble metal sputtering target, characterized in that it comprises the step of processing the bonding portion of the sintered body of the backing plate to match the bonding portion of the corresponding first metal layer. 12. The method of claim 11,
The processing step is a method of manufacturing a precious metal sputtering target, characterized in that performed using a CNC, lathe or milling equipment. 12. The method of claim 11,
The bonding step, the method of manufacturing a noble metal sputtering target, characterized in that it comprises an indium bonding step, or a diffusion bonding step after the processing step. delete delete delete delete delete

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