200937640 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種晝素之形成方法’且特別是有關於一 種應用剝離製程之畫素形成方法。 【先前技術】 薄膜電晶體主要係經由數道繁瑣的微影技術 (photolithography)以及顯影蝕刻技術來形成，且此些步驟需 ❹於黃光室内進行，以嫁保光阻曝光圖案的正確性。由於黃光製 程的成本相當昂貴，因此假若能有效地減少黃光製程内的步驟 便能有效地的縮短製程的時間，減少光罩及黃光製程的使用， 進而降低製造成本。 目前減少黃光製程步驟較為常見的方法為剝離(丨丨ft 〇行)製 程，明參照第1圖至第3圖，其繪示一種傳統應用剝離製程 的晝素結構製造流程圖。在畫素結構製作過程中，首先請參照 ❷第1圖，當完成保護層10之製作後，保留製作保護層1〇之 製程所需的圖案化光阻層12於保護層1〇上，接下來，晝素 電極14全面性的覆蓋於光阻層12及保護層10上。 接著’請參照第2圖，此時加入鹼性剝離液，用以剝離圖 案化光阻層12與位於其上之晝素電極14。同時，沒有覆蓋 於圖案化光阻層12上的晝素電極14則會留下，在剝離製程 之步驟中同時完成晝素電極14之圖案化步驟，如第3圖所 不。沒是由於圖案化光阻層12之聚合物（polymer)材質會溶 於驗性剝離液但畫素電極14並不溶於驗性剝離液，故加入的 6 200937640 鹼性剝離液將保護層10上之圖案化光阻層12溶解而使圖 案化光阻層12與保護層10脫離。如此一來，於圖案化光阻 f 12上之畫素電極14自然會關案化雜層12之脫離而順 ▼脫離冑統上利用剝離製程來達成畫素電極圖案化的結果， 而^需要多加-道製程來進行畫素電極圖案化的步驟。因此， 便能有效減少製程之時間，並降低成本。 然而，由於液晶顯示器中之玻璃基板之尺寸逐步放大，相 ❹J·所使用的各項化學藥劑的》肖耗量亦同步增高。如何減少化學 藥齊丨的4耗置，已成為了各界關切的問題。因此各種化學藥劑 回收已逐漸應用於各個製程中，除可有效降低製造成本外，更 月匕減夕、有害事業廢棄物的產生。 如月ϋ所述，應用於剝離製程中之驗性剝離液必需只能溶解 $案化光阻層12 *無法溶解晝素電極14，彳能夠在不破壞 晝素電極14的前提下進行此剝離製程。隨著光阻層12 一起 被剝離的畫素電極14正因為無法溶解而於回收槽中之驗性剝 參離液形成為數眾多的固體顆粒，若是直接將其回收使用，以具 有=粒的鹼性剝離液再次沖洗薄膜電晶體基板將對基板造成 /亏染與知害。目前已有人提出一種回收化學品的方法：在收集 剝離製程之鹼性剝離液於儲存槽之後，加入約略2%wt的硫代 本酉夂(Thiobenzoic acid)或續酸(sulfonic acid)用以溶解晝素 電極14材料的顆粒，再繼續做為下批薄膜電晶體剝離製程中 之鹼性剝離液。然而，就算加入2%Wt的硫代苯酸及磺酸處理 30分鐘以上只能將部分的畫素電極14溶解，鹼性剝離液中 仍然還會有些許畫素電極14的顆粒(particle)。 7 200937640 ❿200937640 IX. Description of the Invention: [Technical Field] The present invention relates to a method for forming a halogen, and particularly relates to a method for forming a pixel using a lift-off process. [Prior Art] Thin film transistors are mainly formed by a number of cumbersome photolithography and development etching techniques, and these steps need to be performed in a yellow light chamber to ensure the correctness of the photoresist exposure pattern. Since the cost of the yellow light process is quite expensive, if the steps in the yellow light process can be effectively reduced, the process time can be effectively shortened, the use of the mask and the yellow light process can be reduced, and the manufacturing cost can be reduced. At present, the more common method for reducing the yellow light process step is the stripping process, which is shown in Figs. 1 to 3, which shows a flow chart for manufacturing a halogen structure of a conventional application stripping process. In the process of fabricating the pixel structure, first, referring to FIG. 1 , after the fabrication of the protective layer 10 is completed, the patterned photoresist layer 12 required for the process of forming the protective layer 1 is retained on the protective layer 1 The halogen electrode 14 is entirely covered on the photoresist layer 12 and the protective layer 10. Next, please refer to Fig. 2, at which time an alkaline stripping solution is added to peel off the patterned photoresist layer 12 and the halogen electrode 14 located thereon. At the same time, the halogen electrode 14 which is not covered on the patterned photoresist layer 12 is left, and the patterning step of the halogen electrode 14 is simultaneously completed in the step of the stripping process, as shown in Fig. 3. It is not because the polymer material of the patterned photoresist layer 12 is soluble in the annolytic stripping solution but the pixel electrode 14 is not soluble in the inspective stripping solution, so the added 6 200937640 alkaline stripping solution will be on the protective layer 10. The patterned photoresist layer 12 is dissolved to detach the patterned photoresist layer 12 from the protective layer 10. In this way, the pixel electrode 14 on the patterned photoresist f 12 naturally closes the detachment of the impurity layer 12, and the result of the patterning of the pixel electrode is obtained by using a lift-off process on the system. The multi-addition process is used to perform the step of patterning the pixel electrodes. Therefore, it is possible to effectively reduce the time of the process and reduce the cost. However, as the size of the glass substrate in the liquid crystal display is gradually enlarged, the amount of the chemical used in the respective chemicals is also increased. How to reduce the 4 consumption of chemical drugs has become a concern of all walks of life. Therefore, the recycling of various chemical agents has been gradually applied to various processes, in addition to effectively reducing the manufacturing costs, and the occurrence of harmful business wastes. As described in Yueshen, the stripping solution used in the stripping process must dissolve only the photoresist layer 12 * the insoluble ferrite electrode 14 can be removed without destroying the halogen electrode 14 . The pixel electrode 14 that has been peeled off together with the photoresist layer 12 is formed into a plurality of solid particles because of the inability to dissolve the anisotropically stripped liquid in the recovery tank, and if it is directly recycled, it has a base having a particle The re-rinsing of the thin film transistor substrate will cause/loss and damage the substrate. At present, a method for recovering chemicals has been proposed: after collecting the alkaline stripping solution of the stripping process in the storage tank, adding about 2% by weight of Thiobenzoic acid or sulfonic acid for dissolution. The particles of the material of the halogen electrode 14 are further used as the alkaline stripping liquid in the next batch of the film transistor stripping process. However, even if 2% of Wt thiobenzoic acid and sulfonic acid are added for more than 30 minutes, only part of the pixel electrode 14 can be dissolved, and there are still some particles of the pixel electrode 14 in the alkaline stripping solution. 7 200937640 ❿
然而，原本便需使用大量的鹼性剝離液於剝離製程 今又為使鹼性剝離液中之畫素電極14溶解，而需停留， 槽中超過30分鐘。因此’用於儲存的驗性剝離液的儲二 定需要魔大的體積。此外，晝素電極14於驗性剝離液中= 會存有微㈣齡，若在重覆使職性獅液之回路管路^ 裝-組過義，不但會減慢液體回流速度，更由於晝素: 14無法完全轉於雜獅液巾，*使大量_粒容易 過滤器，必射斷流程來更換_，使整錄性溶劑回收 的實際應用效果不彰，也更加的複雜。 【發明内容】 本發明係有關於-種畫素之形成方法’係藉由剝離帅， 製程將位於_化級層上方之透明電極㈣離，再經由酸性 =劑將已祕之透明電極層轉，以加速製賴刻溶解之速 又’縮短製程之咖’並可避免透明電極層齡堵塞過濾、器， 且降低製程之成本。 本發明提供種畫素之形成方法，此形成方法包括下列步 开7成閘極於基板上，形成閘極絕緣層於閘極上以覆蓋問 門形成通道層於閘極上方之閘極絕緣層上；形成源極及錄 镇二極1¾侧之通道層上’且閘極、通道層、雜以及没極構成 梅、電日日體，形成保護層於薄膜電晶體上並曝露出部分之没 上、，形成義化光崎於賴層上；軸朗導電層於基板 开4、楚未被圖案化光阻層覆蓋之薄膜電晶體上； 金屬層於透明導電層上；以剥離製程將位於圖案化光 8 ❹ Ο 200937640 =層f之itsa導電層與第—金屬層移除，·以醆 一殘留之第-金= 裸露出未被圖案化光阻層覆蓋之薄膜電晶體上的透 及位於基板上的透明導電層。 、層 本發明另提供-種畫素之形射法，此形成綠包括 步驟，提供基板’該基板具有數個畫素區，且各此些晝素區 包括非透光區以及透光區；形成薄膜電晶體於基板之非透光區 上；形成保護層於-部分之薄膜電晶體上；形·案化光阻 於保護層上；形成透縣電層於餘之透光區、圖案化光阻^ 及未被圖案化光阻層覆蓋之薄膜電晶體上；形成第-金屬層於 透明導電層上；以一剝離製程將位於圖案化光阻層上之透明導 電層與第一金屬層剝離；以酸性溶劑溶解已剝離之透明導電層 及第一金屬層；移除殘留之第一金屬層以裸露出其下方之透明 導電層；以及以驗性餘刻液移除圖案化光阻層。 為讓本發明之上述内容能更明顯易懂，下文特舉較佳實施 例’並配合所附圖式，作詳細說明如下： 【實施方式】 以下係提出第一及第二實施例作為本發明之說明。然而該 些實施例所提出的方法步驟及結構僅為舉例說明之用，並非對 本發明欲保護之範圍做限縮。再者’圖式中已省略實施例中不 必要之元件，以利清楚顯示本發明之技術特點。 第一實施例 9 200937640 凊參照第4A圖至第4E圖，其續·示依照本發明第一實施例 之晝素形成方法之示意圖。本實施例之畫素形成方法包括下列 步驟。如第4A圖所示，首先提供基板200,且基板20〇具有 數個畫素區c，各畫素區c内包括非透光區a以及透光區b。 接著’形成薄膜電晶體210於基板200之非透光區a上。薄 膜電晶體210之形成方法包括下列步驟，首先會先形成閘極 100於基板200上。接著’形成閘極絕緣層1〇2於閘極1〇〇 上，以覆盖閘極1 〇〇。然後，形成通道層11 〇於閘極1 Q〇上 ❹方之閘極絕緣層102上。接著，形成源極12〇及汲極13〇於 閘極100兩侧之通道層11〇上，且閘極1〇〇、通道層11〇、 源極120以及汲極130構成薄膜電晶體210。 接著’形成保護層140於部分的薄膜電晶體21〇上，較佳 地曝露出薄膜電晶體210部分之汲極130。 接著，請參照第4B圖。形成圖案化光阻層，5〇於保護層 140上。然後’形成透明導電層160於基板200之透光區b、 圖案化光阻層150及未被圖案化光阻層150覆蓋之薄膜電晶 ❿體210上。於本實施例中，透明導電層160例如為一無機物， 較佳地為氧化銦錫（Indium Tin Oxide，ITO)。 然後’形成第一金屬層170於透明導電層160上。於本實 施例中，第一金屬層170作為保護透明導電層16〇之緩衝功 用，使其避免在後續製程，例如剝離製程或蝕刻製程使得透光 區b内的透明導電層受到腐姓和破壞而第一金屬層I?。 之材質係為適用於濕蝕刻的金屬材質，較佳地選自於鉬 (molybdenum)、鉬氮化物、鈦（tUan|um)、鈦氮化物鈕 200937640 L入t=lum)、纽氮化物、18及銅群組或是以上之合金或至少-種金屬以上之疊層。 ^著’清參照第4C圖。於此步驟中’以剝離製程將位於 圖了化光阻層15〇上之透明導電層16〇與第一金屬層口〇刻 離:於本實施例中’剝離製程例如為加熱圖案化光阻層15〇 或、雷射處理圖案化光阻層15〇。本實施之圖案化光阻層伽 之材質係為高分子有機物(通常為碳氫氧化合物），而碳氣氧化 合物受到加熱處理或是雷射處理時，會產生氣體。因此當圖案 化光阻層15G受到加熱或是雷射處理而產生氣體時，便會使 位於圖案化光阻層15Q上之透明導電層16〇⑴⑽⑺與圖 案化光阻層150之間的邊際破裂，如此一來，位於圖案化光 阻層150上之透明導電層16〇(1)、16〇(2)及第一金屬層 170(1)、170(2)從圖案化光阻層15〇上被剝離下來。由於只 有高分子有機物受到加熱或雷射處理時會產生氣體，故此步驟 中係僅有形成於圖案化光阻層15〇上的透明導電層16〇(1)、 160(2)及第一金屬層170(1)、170(2)會被剝離，而其餘部分 之透明導電層160(3)及第一金屬層170(3)則會繼續留在基板 200上以及部分的薄膜電晶體21〇上。 接著’以酸性溶劑溶解已剝離之透明導電層160(彳）、彳6〇(2) 及第一金屬層170(1)、170(2)。酸性溶劑可以同時溶解透明 導電層以及第一金屬層’但酸性溶劑較佳地對於透明導電層的 溶解能力優於對於第一金屬層的溶解能力。因此，當直接施加 酸性溶劑於畫素表面用以溶解已剝離之透明導電層16〇(ί)、 160(2)以及第一金屬層170(1)、170(2)時，酸性溶劑所不易 11 200937640 溶解的第一金屬層17〇(3)覆蓋於透明導電層160(3)上，便能 有效地保魏料電層_(3)，避免透明導電層16Q(3)被酸 性溶劑所餘刻。或者，於溶解已剝離之透明導電層之步驟中， 較佳地亦可先以酸性溶劑將已剝離之透明導電層16〇(1)、 =0(2)及第-金屬層17〇⑴、17〇(2)沖刷至具有酸性溶劑之 溶解槽中，再於溶解槽中以酸性溶劑溶解透明導電層 :6〇(1)、160(2)及第-金屬層17Q⑴、17Q(2) 僅可以解 ❻、'、傳統上用以移除光阻層的驗性溶劑中具有顆粒而不易回收 使用的問題’並可避免透明電極層160(1)、160(2)之顆粒堵 塞過濾器’更可以減讀性溶劑使用量，驗溶解時間。 接著，請同時參照第4C圖及第4D圖，移除殘留之第一金 屬層170(3)以裸露出未被圖案化光阻層15〇覆蓋之沒極伽 的透月導電層16G(3)及位於基板2GQ上的透明導電層 160(3)，此一步驟較佳的是採用對於第一金屬層的溶解能力 優於對於透明導電層的溶解能力的酸性溶劑。如此一來便可快 Q逮將第一金屬層170(3)移除。也就是說，於本實施例中，溶 解已剝離之透明導電| 16〇⑴、⑽(2)及第一金屬層 ⑴、170(2)時與移除第一金屬層17〇(3)的步驟係為分開 ^行，於*祕_段分職當制不狀_液加速反應速 X，有效地減少製程時間。 1再者，凊同時參照第4D圖及第4E圖。由於圖案化光阻層 〇之材料無法被酸性溶劑蝕刻。因此，需再以鹼性溶劑來移 =圖案化光_ 15G，由於驗性溶射不包括無法溶解的透明 電層以及第-金屬層’可以直接回收再·。相較於傳統方 12 200937640 法在驗性溶劑回收槽中加入酸性液體來溶解顆粒的作法，本實 施例將酸性溶劑與鹼性溶劑分開收集處理回收再利用，不僅在 鹼性溶劑中不會產生固體顆粒，且完全溶解透明導電層及第一 金屬層所需的酸性溶劑體積也可大幅度的降低。 於本實施例中，藉由圖案化光阻層150接收雷射或熱源會 產生氣體的特性，只有位於圖案化光阻層15〇上之透明導電 層160(1)、160(2)才會因界面之破離而被剝離(如第4c圖），However, it was originally necessary to use a large amount of alkaline stripping solution in the stripping process. Now, in order to dissolve the pixel electrode 14 in the alkaline stripping solution, it is necessary to stay in the bath for more than 30 minutes. Therefore, the storage of the remarkable stripping solution for storage requires a large volume. In addition, the halogen electrode 14 in the test stripping solution = there will be micro (four) age, if repeated in the loop circuit of the professional lion fluid ^ group - group will not only slow down the liquid reflux speed, but also Alizarin: 14 can not be completely transferred to the mixed lion liquid towel, * make a large number of _ grain easy to filter, must break the process to replace _, so that the actual application of the recording solvent recovery is not obvious, but also more complicated. SUMMARY OF THE INVENTION The present invention relates to a method for forming a kind of pixel. The method is to remove the transparent electrode (four) located above the _ layer, and then transfer the transparent electrode layer through the acid agent. In order to speed up the dissolution process and shorten the process of the coffee, and avoid the transparent electrode layer age to block the filter, and reduce the cost of the process. The invention provides a method for forming a species of pixels, the method comprising the steps of: forming a gate on the substrate, forming a gate insulating layer on the gate to cover the gate to form a channel layer on the gate insulating layer above the gate Forming the source and the channel layer on the 13⁄4 side of the two poles of the town; and the gate, channel layer, impurity and immersion constitute the plum and the electric solar body, forming a protective layer on the thin film transistor and exposing the portion Forming a layer of conductive layer on the substrate; the conductive layer on the substrate is on the thin film transistor which is not covered by the patterned photoresist layer; the metal layer is on the transparent conductive layer; and the stripping process is to be patterned Light 8 ❹ Ο 200937640 = layer of itsa conductive layer and the first metal layer removed, · 醆 a residual first - gold = bare exposed on the thin film transistor not covered by the patterned photoresist layer and located on the substrate Transparent conductive layer on top. The present invention further provides a method for forming a pixel, the step of forming a green color, providing a substrate, wherein the substrate has a plurality of pixel regions, and each of the pixel regions includes a non-transmissive region and a light transmissive region; Forming a thin film transistor on the non-transmissive region of the substrate; forming a protective layer on the portion of the thin film transistor; forming a patterned photoresist on the protective layer; forming a transparent layer in the transparent layer of the county electrical layer a photoresist and a thin film transistor not covered by the patterned photoresist layer; forming a first metal layer on the transparent conductive layer; and a transparent conductive layer on the patterned photoresist layer and the first metal layer in a stripping process Stripping; dissolving the stripped transparent conductive layer and the first metal layer with an acidic solvent; removing the remaining first metal layer to expose the transparent conductive layer underneath; and removing the patterned photoresist layer with an illustrative residue . In order to make the above-mentioned contents of the present invention more comprehensible, the following description of the preferred embodiments of the present invention will be described in detail as follows: [Embodiment] The following first and second embodiments are proposed as the present invention. Description. However, the method steps and structures set forth in the embodiments are merely illustrative and are not intended to limit the scope of the invention. Further, elements which are not necessary in the embodiment have been omitted in the drawings, so as to clearly show the technical features of the present invention. First Embodiment 9 200937640 Referring to Figs. 4A to 4E, there is shown a schematic view showing a method of forming a halogen in accordance with a first embodiment of the present invention. The pixel forming method of this embodiment includes the following steps. As shown in Fig. 4A, the substrate 200 is first provided, and the substrate 20A has a plurality of pixel regions c, and each of the pixel regions c includes a non-light transmitting region a and a light transmitting region b. Next, a thin film transistor 210 is formed on the non-light transmitting region a of the substrate 200. The method of forming the thin film transistor 210 includes the following steps of first forming the gate 100 on the substrate 200. Next, a gate insulating layer 1 〇 2 is formed on the gate 1 以 to cover the gate 1 〇〇. Then, the channel layer 11 is formed on the gate insulating layer 102 on the gate 1 Q〇. Next, the source 12 〇 and the drain 13 are formed on the channel layer 11 两侧 on both sides of the gate 100, and the gate 1 〇〇, the channel layer 11 〇, the source 120, and the drain 130 constitute a thin film transistor 210. Next, a protective layer 140 is formed on a portion of the thin film transistor 21, preferably exposing the drain 130 of the portion of the thin film transistor 210. Next, please refer to Figure 4B. A patterned photoresist layer is formed on the protective layer 140. Then, a transparent conductive layer 160 is formed on the light-transmissive region b of the substrate 200, the patterned photoresist layer 150, and the thin film transistor 200 that is not covered by the patterned photoresist layer 150. In the present embodiment, the transparent conductive layer 160 is, for example, an inorganic material, preferably Indium Tin Oxide (ITO). Then, a first metal layer 170 is formed on the transparent conductive layer 160. In the present embodiment, the first metal layer 170 serves as a buffering function for protecting the transparent conductive layer 16〇, so as to avoid the subsequent process, such as a stripping process or an etching process, so that the transparent conductive layer in the light-transmitting region b is damaged and destroyed. And the first metal layer I?. The material is a metal material suitable for wet etching, preferably selected from the group consisting of molybdenum, molybdenum nitride, titanium (tUan|um), titanium nitride button 200937640 L into t=lum), nitrile, 18 and a copper group or a combination of the above alloys or at least one metal. ^ Refer to Figure 4C for clarity. In this step, the transparent conductive layer 16A on the patterned photoresist layer 15A is etched away from the first metal layer by a stripping process: in the present embodiment, the 'peeling process is, for example, heating the patterned photoresist. The layer 15 〇 or laser processed patterned photoresist layer 15 〇. The patterned photoresist layer of the present embodiment is a polymer organic material (usually a carbon oxyhydroxide), and a gas is generated when the carbon gas oxide is subjected to heat treatment or laser treatment. Therefore, when the patterned photoresist layer 15G is heated or laserized to generate a gas, the marginal rupture between the transparent conductive layer 16(1)(10)(7) on the patterned photoresist layer 15Q and the patterned photoresist layer 150 is caused. Thus, the transparent conductive layers 16〇(1), 16〇(2) and the first metal layers 170(1), 170(2) on the patterned photoresist layer 150 are patterned from the photoresist layer 15〇 It was stripped off. Since only the high-molecular organic substance is heated or laser-processed, gas is generated. Therefore, only the transparent conductive layers 16(1), 160(2) and the first metal formed on the patterned photoresist layer 15 are formed in this step. Layers 170(1), 170(2) are stripped, while the remaining portions of transparent conductive layer 160(3) and first metal layer 170(3) remain on substrate 200 and a portion of thin film transistor 21〇 on. Next, the peeled transparent conductive layer 160 (彳), 彳6〇(2), and the first metal layers 170(1), 170(2) are dissolved in an acidic solvent. The acidic solvent can dissolve both the transparent conductive layer and the first metal layer 'but the acidic solvent preferably has a better dissolving power for the transparent conductive layer than for the first metal layer. Therefore, when an acidic solvent is directly applied to the surface of the pixel to dissolve the stripped transparent conductive layer 16(1), 160(2) and the first metal layer 170(1), 170(2), the acidic solvent is not easy. 11 200937640 The dissolved first metal layer 17〇(3) is overlaid on the transparent conductive layer 160(3), so as to effectively protect the electrical layer _(3), and avoid the transparent conductive layer 16Q(3) being treated by an acidic solvent. All the time. Alternatively, in the step of dissolving the stripped transparent conductive layer, the stripped transparent conductive layer 16(1), =0(2) and the first metal layer 17(1) may preferably be firstly treated with an acidic solvent. 17〇(2) is flushed into a dissolution tank with an acidic solvent, and the transparent conductive layer is dissolved in an acidic solvent in the dissolution tank: 6〇(1), 160(2) and the metal layer 17Q(1), 17Q(2) only It can solve the problem that 'there is a problem that particles in the organic solvent used to remove the photoresist layer are not easily recyclable' and can prevent the particles of the transparent electrode layer 160(1), 160(2) from clogging the filter' It is also possible to reduce the amount of solvent used and check the dissolution time. Next, referring to FIG. 4C and FIG. 4D simultaneously, the remaining first metal layer 170(3) is removed to expose the unpolarized vapor-permeable layer 16G (3) which is not covered by the patterned photoresist layer 15? And the transparent conductive layer 160(3) on the substrate 2GQ, this step preferably uses an acidic solvent which has a better dissolving power for the first metal layer than for the transparent conductive layer. In this way, the first metal layer 170(3) can be removed quickly. That is, in the present embodiment, the stripped transparent conductive | 16 〇 (1), (10) (2) and the first metal layers (1), 170 (2) are dissolved and the first metal layer 17 〇 (3) is removed. The steps are divided into two lines, in the * secret _ segment of the division when the system is not _ liquid accelerated reaction speed X, effectively reducing the process time. 1 Furthermore, 凊 refer to both the 4D and 4E drawings. Since the material of the patterned photoresist layer cannot be etched by an acidic solvent. Therefore, it is necessary to shift the patterned light _ 15G with an alkaline solvent, since the inactive dissolution does not include the insoluble transparent layer and the first metal layer can be directly recovered. Compared with the conventional method of adding the acidic liquid to dissolve the particles in the inert solvent recovery tank, the present embodiment separates the acidic solvent from the alkaline solvent, collects and recycles, and not only does not generate in the alkaline solvent. The volume of the acidic solvent required for the solid particles and completely dissolving the transparent conductive layer and the first metal layer can also be greatly reduced. In this embodiment, the characteristics of the gas generated by receiving the laser or the heat source by the patterned photoresist layer 150 are only the transparent conductive layers 160(1) and 160(2) located on the patterned photoresist layer 15〇. Stripped due to the breakage of the interface (as in Figure 4c),
其餘的透明導電層160(3)則會留下，藉此達成對透明導電層 160圖案化的目的。 此外，於本實施例中，亦可選擇性地於形成第一金屬層16〇The remaining transparent conductive layer 160(3) is left, thereby achieving the purpose of patterning the transparent conductive layer 160. In addition, in this embodiment, the first metal layer 16 can also be selectively formed.
後再添加一製程步驟。請同時參照第4B圖及第5A圖，第5A 圖係缘不形成第二金屬層於第4A圖中之示意圖。於本實施例 ^ ’較佳地可於形成第—金屬層17◦之步驟後，覆蓋第二金 =190於第—金屬層仍上。於本實施例中，第二金屬層 之材質選自於銷（mdybdenum)、钥氮化物鈦 :咖）、欽氮化物、组(tanta|um)、组氮化物銘及銅群 縦It执撕之°金或—種金屬以上之疊層。但必需注意的是， 屬層第—金屬層19G之㈣速率需低於對於第一金 料為銷率。舉例來說，若第—金屬層170之材 溶劑對於I 190讀料健地係域，則此酸性 齊i對於銘之_速率需低於對於狀#刻速率。 之示I圖5’ ’其纷示實施一剝離製程於第5A圖 150,位於圖案化光^加熱處理或雷射處理此圖案化光阻層 ”忐阻層150之透明導電層160(1)、160(2)、 13 200937640 第一金屬層170(1)、170(2)及第二金屬層19〇⑴、伽 便與圖案化光阻層150脫離。 ) 相同地，再以-酸性溶劑（氧化銦锡餘刻劑）溶解已剩離之 透明導電層⑽⑴、160(2)、第—金屬層17〇⑴、 及第二金屬層190⑴、顺2)。由於第二金屬層19〇之被= 刻速率係低於第一金屬層17〇之被餘刻速率，因此未 ，透明導電層彳师)除了具有殘留之第—金屬層口 瘦外，更多了第二金屬層190(3)之保護。 、 接著，請同時參照第5B至5D圖’第5C圖係綠示 5B圖中殘留之第-金屬層及第二金屬層之示意圖，第 係繪示移除第5C圖中圖案化光阻層之示意圖。首先 = 蓋於第-金屬層m(3)之第二金屬層19〇(3)，例如是以$ 溶劑進行此步驟。接著以相同的或不同的酸性溶劑移除第 屬層170(3)。然後，再以驗性餘刻液移除圖案化光阻層伽 % 於本實施例中，若透明導電層16〇之厚度需加厚使得、容能 已剝離之透明導電層160⑴、16〇(2)之製程時間 j 時’便可選擇性地於形成第—金屬層17Q後再多覆蓋一 金屬層190,以增加透明導電層16〇⑶之保護效果。如: 來’便可有效地避免長時㈣性溶劑溶解已_透明 160(1)、160(2)時對未剝離透明導電層16〇(3)產生反^ =本實施例之第二金屬層伽之施用與否則依據實際情‘ 第二實施例 200937640 第二實施例與第—實關兩者軸方法其差別在於：溶解 已剝離之透明電極層160(1)、160(2)及第一金屬層17〇⑴、 170(2)與移除第-金屬層17〇(3)之步驟係同時進行。因此， 其形成方法之示意圖相同地均為第4A圖至第4日圖，因此其 結構、相關之材料及設計條件在此不再費述。 、 於本實施例巾健採用-溶劑，可用以溶解已剝離 之透明電極層，如第4C圖之160(1)、⑽(2)及第一金屬層 17〇(1)、17〇(2)’也可以用作移除第-金屬層170(3)之溶劑。 因此，/、要將酸性溶劑直接施加於晝素表面，便可同時移除全 部需要移除或溶解之金屬層，例如第5B圖之第一金屬層 170(3)以及第一金屬㉟19〇(3)以及;容解已剝離的透明導電層 160(1)、16〇(2)、第一金屬層17〇⑴、17〇⑵以及第二^ 層190(1)、190(2)，將二個步驟同時完成，減少酸性溶劑使 用種類’降低製程的複雜度。 本發明上述實施例所揭露之畫素結構之形成方法，係藉由 籲剝離製程將位於圖案化光阻層之透明電極層剝離，以進行圖案 化之步驟。接著’以酸性溶劑將已剝離之透明電極層及作為保 護作用之第一金屬層及第二金屬層餘刻溶解，再以驗性餘刻液 將圖案化光RE層移除。藉由針對透明電極層、圖案化光阻層採 用不同之蝕刻液，以及使用酸性蝕刻液來溶解透明導電層，可 加速蝕刻之速率以減少儲存溶劑之儲存槽容量避免溶劑中殘 留未洛解之顆利，以達到溶劑之回收再利用的目的。如此— 來，便能加速製程時間、降低儲存溶劑的儲存槽容量，並且達 到回收再利用溶劑的目的，有效地降低製程的成本。 15 200937640 雖然本發明已以實施例揭露如上，然其並非用以限定本發 明，任何具有本發明所屬技術領域之通常知識者，在不脫離本 發明之精神和範_，當可作各種更動與潤飾，並可思揣其他 不同的實施例’因此本發明之保護範圍當視後附申請專利範圍 所界定者為準。Then add a process step. Please refer to FIG. 4B and FIG. 5A simultaneously. FIG. 5A shows a schematic diagram of the second metal layer in FIG. 4A. In the present embodiment, it is preferable to cover the second gold = 190 after the step of forming the first metal layer 17 is still on the first metal layer. In this embodiment, the material of the second metal layer is selected from the group consisting of a pin (mdybdenum, a key nitride titanium: coffee), a zirconium, a group (tanta|um), a group nitride, and a copper group. A layer of gold or a metal or more. It must be noted, however, that the (four) rate of the layer-metal layer 19G is lower than the rate of the first metal. For example, if the solvent of the first metal layer 170 is for the I 190 reading system, then the acidity should be lower than the rate of the etch. Figure 5'' shows a stripping process in Figure 5A 150, located in a patterned light-heat treatment or laser treatment of the patterned photoresist layer" of the transparent conductive layer 160 of the barrier layer 150 (1) 160(2), 13 200937640 The first metal layers 170(1), 170(2) and the second metal layer 19〇(1) are separated from the patterned photoresist layer 150.) Similarly, an acidic solvent is further used. (Indium tin oxide remnant) dissolves the remaining transparent conductive layers (10) (1), 160 (2), the first metal layer 17 〇 (1), and the second metal layer 190 (1), cis 2). Since the second metal layer 19 The engraved rate is lower than the entrapped rate of the first metal layer 17〇, so no, the transparent conductive layer has a second metal layer 190 in addition to the residual first metal layer. Protection, then, please refer to the schematic diagram of the first metal layer and the second metal layer remaining in the green display 5B of the 5th to 5D drawings, and the system is shown to remove the pattern in the 5Cth picture. Schematic diagram of the photoresist layer. First = cover the second metal layer 19〇(3) of the first metal layer m(3), for example, with a solvent of this step. Then with the same or The same acidic solvent removes the first layer 170(3). Then, the patterned photoresist layer is removed by the lithography residue in the present embodiment. If the thickness of the transparent conductive layer 16 is thickened, The process time of the transparent conductive layer 160(1) and 16〇(2) which has been stripped can be selectively covered with a metal layer 190 after the formation of the first metal layer 17Q to increase the transparent conductive layer 16〇. (3) The protective effect, such as: Come to 'can effectively avoid long-term (four) solvent dissolution has been transparent _ transparent 160 (1), 160 (2) on the unpeeled transparent conductive layer 16 〇 (3) produced inverse ^ = this implementation The application of the second metal layer gamma is otherwise based on the actual situation. The second embodiment 200937640 The second embodiment and the first-axis method have the difference in that the stripped transparent electrode layer 160(1), 160 is dissolved. (2) and the steps of the first metal layer 17〇(1), 170(2) and the removal of the first metal layer 17〇(3) are performed simultaneously. Therefore, the schematic diagram of the method of forming the same is the same as the 4A to the 4th map, so its structure, related materials and design conditions are not mentioned here. In this example, the towel is used - solvent, For dissolving the stripped transparent electrode layer, such as 160(1), (10)(2) and the first metal layer 17〇(1), 17〇(2)' in FIG. 4C can also be used as the removal of the first metal The solvent of layer 170 (3). Therefore, /, to apply the acidic solvent directly to the surface of the halogen, it is possible to simultaneously remove all the metal layers that need to be removed or dissolved, such as the first metal layer 170 of Figure 5B (3) And the first metal 3519〇(3) and the transparent conductive layer 160(1), 16〇(2), the first metal layer 17〇(1), 17〇(2), and the second layer 190 (1) ), 190 (2), the two steps are completed at the same time, reducing the use of acidic solvents to reduce the complexity of the process. The method for forming the pixel structure disclosed in the above embodiments of the present invention is a step of patterning the transparent electrode layer located on the patterned photoresist layer by a stripping process. Next, the peeled transparent electrode layer and the first metal layer and the second metal layer as a protective effect are dissolved in an acidic solvent, and the patterned light RE layer is removed by an inertial residual solution. By dissolving the transparent conductive layer for the transparent electrode layer, the patterned photoresist layer, and using the acidic etching solution, the etching rate can be accelerated to reduce the storage tank capacity of the storage solvent to avoid residual unsolved in the solvent. Profit, in order to achieve the purpose of recycling and reuse of solvents. In this way, it is possible to speed up the process time, reduce the storage tank capacity of the storage solvent, and achieve the purpose of recycling and reusing the solvent, thereby effectively reducing the cost of the process. The present invention has been disclosed in the above embodiments, but it is not intended to limit the present invention, and any one of ordinary skill in the art to which the present invention pertains can be modified and retouched without departing from the spirit and scope of the present invention. It is to be understood that the scope of the invention is defined by the scope of the appended claims.
200937640 【圖式簡單說明】 第1圖至第3圖繪示一種傳統應用剝離製程的畫素結構製 造流程圖； 第4A圖至第4E圖繪示依照本發明第一實施例之晝素形成 方法之不意圖， 第5A圖係繪示形成第二金屬層於第4A圖中之示意圖； 第5B圖繪示實施一剝離製程於第5A圖之示意圖； 第5C圖係繪示移除第5B圖中殘留之第一金屬層及第二金 ❹ 屬層之示意圖；以及 第5D圖係繪示移除第5C圖中圖案化光阻層之示意圖。 【主要元件符號說明】 a:非透光區 b :透光區 c :晝素區 10、140 ::保護層 12、150 :圖案化光阻層 ® 14 :畫素電極 100 :閘極 102 :閘極絕緣層 110 :通道層 120 :源極 130 :汲極 160、160(1)、160(2)、160(3):透明導電層 170、170(1)、170(2)、170(3):第一金屬層 17 200937640 190、190(1)、190(2)、190(3):第二金屬層 200 :基板 210 :薄膜電晶體200937640 [Simplified Schematic Description] FIGS. 1 to 3 illustrate a flow chart of a pixel structure manufacturing process of a conventional application stripping process; FIGS. 4A to 4E illustrate a method of forming a halogen element according to a first embodiment of the present invention. 5A is a schematic diagram showing the formation of the second metal layer in FIG. 4A; FIG. 5B is a schematic diagram showing the implementation of a stripping process in FIG. 5A; and FIG. 5C is a diagram showing the removal of FIG. 5B. Schematic diagram of the first metal layer and the second metal layer remaining in the middle; and the 5D drawing is a schematic view showing the removal of the patterned photoresist layer in FIG. 5C. [Description of main component symbols] a: non-transmissive region b: light-transmitting region c: halogen region 10, 140 :: protective layer 12, 150: patterned photoresist layer 14 : pixel electrode 100: gate 102: Gate insulating layer 110: channel layer 120: source 130: drain 160, 160(1), 160(2), 160(3): transparent conductive layer 170, 170(1), 170(2), 170( 3): first metal layer 17 200937640 190, 190 (1), 190 (2), 190 (3): second metal layer 200: substrate 210: thin film transistor
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