200937145 六、發明說明： 【發明所屬之技術領域】 本發明，係有關用以檢測被檢測面之面位置之面位置 檢測裝置、曝光裝置、以及元件製造方法。 【先前技術】 曝光裝置，係用以將形成於光罩上之圖案，透過投影 光學系統轉印於感光性基板上，投影光學系統的焦點深度 淺’會有感光性基板的轉印面（曝光面）不平坦的情形。因 此’曝光裝置，必須正確進行對投影光學系統的成像面之 感光性基板的轉印面之定位調整。 就面位置檢測裝置而言’用以檢測沿著投影光學系統 的光軸方向之感光性基板之面位置（轉印面之面位置），例如 已知有斜入射型自動對焦感測器（參照專利文獻丨）。該斜入 射型自動對焦感測器，係對作為被檢側面之感光性基板， 從斜方向投射狹縫像，檢測在被檢側面反射之光所形成之 狹縫像的位置資訊，根據該位置資訊檢測感光性基板之面 位置。 [專利文獻1]日本特開平4_215015號公報 【發明内容】 動 動 在上述之斜入射型自動對 焦感測器，當構成斜入射型 對焦感測器之光學系統内之光學構件發生變動(位置變 折射率變動等)時，會有無法正確檢測沿著投影光學系 200937145 統的光轴方向之感光性基板之面位置之問題。 本發明係有鑑於上述問題而提出者，其目的在於提供 不受光學構件變動的影響，可高精度檢測被檢測面之面位 置之面位置檢測裝置、曝光裝置、以及元件製造方法。 為解決前述問題’本發明之面位置檢測裝置，其特徵 在於，具備：參照構件，具有設於被檢測面附近之參照面； 送光光學系統，其將來自第！圖案面上之第i圖案之測定 光導向該被檢測面，以將該第丨阖案之中間像投射於該被 ® 檢測面，將來自第2圖案面上之第2圖案之參照光導引至 該參照面，以將該第2圖案之中間像投射於該參照面；受 光光學系統，其將被該被檢測面反射之該測定光導向第j 觀測面，以將該第1圖案之觀測像形成於該第i觀測面， 將被該參照面反射之該參照光導引至第2觀測面’以將該 第2圖案之觀測像形成於該第2觀測面；及檢測部，用以 檢測位於該第1觀測面之該第丨圖案之觀測像之第丨位置 資訊及位於該第2觀測面之該第2圖案之觀測像之第2位 置資訊，根據該第1位置資訊及該第2位置資訊檢測該被 檢測面之面位置。 本發明之曝光裝置，係用以將圖案轉印於感光性基 板，其特徵在於，具備：上述本發明之面位置檢測裝置； 及對位手段，根據該面位置檢測裝置之檢測結果，進行設 有該圖案之圖案面或該感光性基板之轉印面之至少一者之 對位；該面位置檢測裝置，係將該圖案面之面位置與該轉 印面之面位置之至少一者作為該被檢測面之面位置加以檢 5 200937145 測。 本發明之元件製造方法，其特徵在於，包含：曝光步 驟使用上述本發明之曝光裝i，將$圖案轉印於該感光 基板’顯影步驟，將轉印有該圖案之該感光性基板顯影， 將對應於該@案之形狀的轉印圖案層$成於該感光性基板 表面，及加工步驟，透過該轉印圖案層，對該感光性基板 表面進行加工。 璧Lj月之效果 在本發明之面位置檢測裝置，參照光經由設於被檢側 面附近之參照面、及與測定光共通之光學構件而導引至第2 觀測面。其結果，參照光，雖與測定光不同未包含被檢側 面的移動之相關資訊，但與測定光同樣包含光學構件的變 動影響之相關資訊。因此，例如根據參照光之觀測像之偏 4量可測量因光學構件的變動所致之被檢測面之面位置 之檢測誤差。 因此’本發明之面位置檢測裝置、曝光裝置、以及元 件製造方法’根據藉參照光之觀測像的檢測結果與藉測定 光之觀測像的檢測結果，可高精度檢測被檢測面之面位置。 【實施方式】 根據所附圖式說明本發明之實施形態，圖1係表示本 發明之實施形態之具備面位置檢測裝置之曝光裝置的構成 之概略圖。圖1中，設投影光學系統PL之光轴AX的方向 為Z軸、在垂直於光轴AX之面内平行於圖1之紙面為χ 200937145 軸、垂直於圖1之紙面為γ軸❶本實施形態，對於曝光裝 置之感光性基板之面位置之檢測，適用本發明之面位置檢 測裝置。 圖1之曝光裝置具備照明系統IL，以自曝光用光源（未 圖不）射出之照明光（曝光用光），照明形成有既定圖案之作 為光罩之標線片R。標線片R，在標線片載台尺8上，被保 持成平行於XY平面。標線片載台Rs，藉由省略圖示之驅 動系統的作用，可沿著χγ平面作二維移動，其位置座標藉 ® 由標線片干涉計（未圖示）測量且進行位置控制。 透射過標線片R之曝光用光，透過投影曝光系統PL將 標線片圖案像形成於感光性基板之晶圓w的表面（轉印 面）Wa。晶圓W，被保持成在晶圓載台ws上沿χγ平面。 晶圓載SWS，藉由未圖示之驅動系統的作用，可進行調平 (呈水平）、Z方向（對焦方向）移動 '沿χγ平面之二維移動、 及繞Ζ軸旋轉’其位置座標藉由晶圓干涉計（未圖示）測量且 進行位置控制。 ❹為了將設於標線片R的圖案面上之電路圖案良好轉印 於晶圓W的轉印面Wa上之各曝光區域，每於對各曝光區 域的曝光’在以投影曝光系統PL的成像面為中心之焦點深 度的寬度範圍内，必須進行現在曝光區域之對位。其理由 在於，可於檢測現在曝光區域之各點沿光轴χ之位置，亦 卩ϋ確&測出現在曝光區域之面位置後根據其檢測結 果，進行晶圓載台ws的調平及2方向的移動、以及晶圓w 的調平及z方向的移動。 200937145 因此，本實施形態之曝光裝置，具備用以檢測曝光區 域之面位置之面位置檢測裝置。參照圖1，本實施形態之面 位置檢測裝置，具備用以供應該檢測所使用之光的光源i。 一般而言，被檢測面之晶圓w表面，係以光阻等薄膜被覆。 因此，為了減少因該薄膜所產生的干涉之影響，光源1較 佳為波長較寬之白色光源（例如，用以供應波長寬為 600〜900nm照明光之由素燈、或供應與此同樣帶域照明光 之氙光源等）。又，作為光源1，亦可使用發光二極體，以 供應對光阻感光性較弱之波長帶光。 來自光源1之光，透過聚光透鏡2後，射入測定光用 送光稜鏡3及參照光用送光稜鏡送光稜鏡3及4,將來 自聚光透鏡2之光，利用折射作用朝—z方向偏向。在送光 稜鏡3之射出面（第i圖案面）3a，例如圖2所示，設置具有 複數個測定光用之送光狹縫S1〜S12(第1圖案）之送光圖 案。在送光稜鏡4之射出面（第2圖案面）4a,例如圖2所示， 設置複數個參照光用之送光狹縫sn〜S15(第2圖案）。 又，將送光稜鏡3之射出面3a與送光稜鏡4之射出面 43設成彼此平行。圖2中，在射出面3a，設平行於整體座 標之Y軸的方向為^軸、正交於…轴的方向為η軸。 送光狹縫S1〜S15，例如係呈於與χ1方向及yi方向成 45度傾斜方向細長延伸之矩形狀（狹縫狀）之光透射部，送 $光广==以外的區域係遮光部。測定光用之送光狹縫 縫S13 Η方向以既定間距排列，參照光用之送光狹 5係設成自測定光用之送光狹縫S1〜S12於yl方 200937145 向隔著間隔且沿著x 1方向以既定間距排列。 又’送光狹縫S13之xl座標係和送光狹缝S2與S3的 中間位置之xl座標一致’送光狹縫S14之xl座標係和送 光狹缝S6與S7的中間位置之xl座標一致，送光狹縫S15 之xl座標係和送光狹缝S10與S11的中間位置之χ1座標 一致。 光源1及聚光透鏡2,係構成用以將測定光用之送光狹 ❹ ❹ 缝S1〜S12與參照光用之送光狹縫S13〜S15整體照明之整體 照明裝置。通過送光狹缝S1〜s 12之光，係作為測定光，用 以檢測晶圓w之面位置。通過送光狹縫S13〜S15之光，係 作為參照光，用以測量面位置檢測裝置之檢測誤差。又， 送光狹縫的形狀、數量、排列、形態等可作各種變形例， 用以規定測定光之第丨圖案及用以規定參照光之第2圖案 可作各種形態。 ~ 通過送光狹縫S1〜S12之測定光及通過送 S13〜S15之參照光’係透過第2物鏡5、作為掃描手段之振 動反射鏡6、及第i物鏡7射入落射稜鏡第2物鏡5及 第1物鏡7彼此協調動作’以既定倍率形成送光狹縫sn :中：像。振動反射鏡6配置於第！物鏡7之前側焦點位 置，如圖i中箭頭所示可繞，軸旋動。落射稜鏡8，係沿著 千面呈平行四邊形截面之柱狀稜鏡構件。 之入！二中’沿著以實線表示之測定光路射入落射稜鏡8 平行之敎光&，被反射面外及8^依序反射然後 千订移動於Z方向後，從射出面8d沿著㈣ 200937145 測定光路（xz平面内之測定光路），從斜方向射人晶圓|表 面亦即作為被檢側面之轉印® Wa上之檢測區域A。此入射 角列如設定為80度以上未達9〇度之大角度。另一方面， 沿著以途中虛線所示之參照光路射人落射稜鏡8之入射面 8a之參照光Lr，被反射面扑及“依序反射然後平行移動 於z方向後’從射出面8d沿著以圖中虛線所示之參照光路 (XZ平面内之參照光路），從斜方向射入平面反射鏡9表面 之反射面9a此入射角，係設定成與測定光[爪之對轉印 面之入射角相等。又，圖3中，以實線所示之測定光路 與以虛線所示之參照光路，不僅於2方向且於γ方向平行 分離。 如此，測定光用之送光狹縫Sl〜Sl2的中間像射入檢測 區域A。即，在檢測區域A，對應於送光狹縫si〜si2，沿 著X方向以既定間距形成與χ方向及γ方向成45度之斜 方向細長延伸之12個測定光照射區域。各測定光照射區域 的中心，係對應於檢測區域Α之檢測點。又，參照光用之 送光狹縫S13〜S15的中間像投射於平面反射鏡9之反射面 9a，對應於送光狹縫Si3〜S15，沿著χ方向以既定間距形 成與X方向及Υ方向成45度之斜方向細長延伸之3個矩形 狀之參照光照射區域。 如此，平面反射鏡9,構成具有設於轉印面Wa附近之 作為參照面之反射面9a的參照構件。又，第2物鏡5、振 動反射鏡6、第1物鏡7、及落射稜鏡8構成送光光學系統， 將來自射出面3a上之送光狹縫S1〜S12之測定光導向轉印 200937145 面Wa後，將送光狹縫S1〜S12的中間像投射於轉印面， 將來自射出面4a上之送光狹縫si 3〜S15之參照光導引至反 射面9a後，將光狹縫S13〜S15的中間像投射於反射面9a。 在此，射出面3a係配置於送光光學系統之轉印面Wa之共 扼面或其附近之面，射出面4a係配置於送光光學系統之反 射面9a之共軛面或其附近之面。 被轉印面Wa反射之測定光Lm及被反射面9a反射之 參照光Lr射入落射稜鏡18。落射稜鏡18，在既定之丫三平 〇 面（例如，包含光軸AX之γζ平面）配置於與落射稜鏡8相 對稱之位置且具有對稱之構成。具體而言，落射稜鏡18, 具有與落射稜鏡8以射出面8d為基準反轉之構成。因此入 射於落射稜鏡18之入射面18a之測定光Lm及參照光， 被反射面18b及18c依序反射然後平行移動於z方向後， 從射出面18d射出。 參照圖1，從落射稜鏡18射出之測定光，透過第i物 鏡17、反射鏡16、及第2物鏡15,射入測定光用受光稜鏡 13。從落射稜鏡18射出之參照光，透過第i物鏡、反射 鏡16、及第2物鏡15,射入參照光用受光稜鏡14。第 鏡17、反射鏡16、及第2物鏡15’於既定之γζ平面（例如 包含光軸AX之YZ平面）’配置於分別與第丨物鏡7、振動 反射鏡6、及第2物鏡5相對稱的位置且具有分別對稱的構 成。但，反射鏡16,係不同於振動反射鏡6,而固定設置。 受光棱鏡13及14,於既定之γζ平面（例如，包含光軸 ΑΧ之ΥΖ平面）’配置於分別與送光稜鏡3及4相對稱的位 11 200937145 置且具有分別對稱的構成。 但，受光稜鏡13之入射面13a(與送光稜鏡3之射出面 3a對應之面）’如圖4所示，設有與送光狹縫si〜si2對應 之12個受光狹縫Sal〜Sal2。又，受光稜鏡14之入射面 14a(與送光稜鏡4之射出面乜對應之面），如圖4所示，設 有與送光狹縫S13〜S15對應之3個受光狹縫Sal3〜Sal5。圖 4中，在與受光稜鏡14之入射面14a平行之受光稜鏡13之 入射面13a，於與整鱧座標之γ軸平行的方向設.定為y2軸， 在入射面13a，於與y2軸正交的方向設定為χ2轴。 ◎ 受光狹縫Sal〜Sal5’係於與Χ2方向及y2方向成45度 之斜方向細長延伸之矩形狀（狹缝狀）之光透射部，受光狹缝 Sal〜Sal5以外的區域為遮光部。受光狹縫Sal〜Sal2，係沿 著x2方向以既定間距排列，受光狹縫Sal3〜Sal5，係設置 成與受光狹縫Sal〜Sal 2於y2方向隔著間隔，且沿著χ2方 向以既定間距排列。 測定光用之送光狹縫S1〜S12的觀測像形成於受光稜鏡 13之入射面13a’參照光用之送光狹缝S13〜S15的觀測像 Ο 形成於受光稜鏡14之入射面14a。即，在受光稜鏡13之入 射面13a’對應於送光狹縫S1〜S12，沿著χ2方向以既定間 距形成與χ2方向及y2方向成45度之斜方向細長延伸之12 個矩形狀之測定觀測像。又，在受光棱鏡14之入射面14a， 對應於送光狹缝S13〜S15 ’沿著χ2方向以既定間距形成與 x2方向及y2方向成45度之斜方向細長延伸之3個矩形狀 之參照觀測像。 12 200937145 如此’落射棱鏡18、第1物鏡17、反射鏡16、及第2 物鏡15構成受光光學系統’用以將被轉印面Wa反射之測 定光導向受光稜鏡13之入射面（第1觀測面）13a後，將送光 狹缝S1〜S12之測定觀測像形成於入射面13a，將被反射面 9a反射之參照光導向受光稜鏡14之入射面（第2觀測面）i4a 後，將送光狹縫S 13〜S15之參照觀測像形成於入射面】牦。 即’藉由該受光光學系統與前述送光光學系統，將入射面 13a’透過轉印面Wa而配置於射出面3a之共軛面或其附近 © 之面’將入射面i4a，透過反射面9a而配置於射出面4a之 共輛面或其附近之面。 圖5係表示從送光稜鏡至受光稜鏡之光路直線狀展 開、從光源至受光稜鏡之構成概略圖。為易於理解從光源1 至受光稜鏡13、14之構成，將由第2物鏡5、振動反射鏡 6、第1物鏡7、及落射稜鏡8所構成之送光光學系統Sl簡 化成1個透鏡，將落射稜鏡18、第1物鏡17、反射鏡16、 及第2物鏡15所構成之受光光學系統jl簡化成1個透鏡， ❹將送光光學系統SL及受光光學系統JL之光路分別直線狀 展開。 參照圖1，射入受光稜鏡丨3之測定光，通過受光狹縫 Sal〜Sal2，僅以既定角度偏向後，從受光稜鏡13射出。射 入受光棱鏡14之參照光，通過受光狭縫sai3〜Sal5，僅以 既定角度偏向後，從受光稜鏡14射出。從邵光稜鏡13及 14射出之測定光及參照光，透過中繼透鏡丨2，將分別形成 於受光狹缝Sal〜Sal5内部之送光狹縫S1〜S15之觀測像的 13 200937145 共軛像，形成於光檢測器11之檢測面11 a上。 如圖6所示，在光檢測器11之檢測面π a，15個受光 部RS1〜RS 15，設置成對應於12個測定光用之受光狹縫 Sal~Sal2及3個參照光用之受光狹缝Sal3~Sal5。受光部 RS1~RS15，分別接收通過受光狹縫Sal〜Sal5之光。即，12 個受光部RS1〜RS12 ’接收通過與送光狹缝si〜S12對應之 12個受光狹縫Sal〜Sal2之測定光，3個受光部 RS13〜RS15 ’接收通過與送光狹縫S13〜S15對應之3個受 光狹縫Sal3〜Sal5之參照光。 ❹ 送光狹縫S 1〜S 12之測定觀測像’伴隨沿著轉印面Wa 之Z方向的移動而移動於X2方向。另一方面，送光狹縫 S 13〜S 15之參照觀測像，不同於測定觀測像，因未經由轉印 面Wa，因此完全未受到沿著轉印面Wa之z方向的移動之 影響。因此’通過受光狹縫Sal〜Sal2之測定光的光量係對 應於轉印面Wa之Z方向移動而改變，但，通過受光狹縫 Sal3~Sal5之參照光的光量，並未取決於轉印面Wa之z方 向移動而保持一定。換言之，通過受光狹縫Sal〜Sal2之測 ◎ 定光雖包含轉印面Wa之Z方向移動之相關資訊，但，通過 受光狹縫Sal3〜Sal5之參照光並未包含轉印面Wa2 z方向 移動之相關資訊。 本實施形態之面位置檢測裝置，於轉印面Wa與投影光 學系統PL之成像面一致的狀態，測定光用之送光狹縫 S1〜S12之測定觀測像係形成於受光狹縫sai〜sai2的位 置，參照光用之送光狹縫S13〜S15之觀測像係形成於受光 14 200937145 狹缝3&13〜8315的位置。受光部11§[1〜1^15之檢測訊號，係 與振動反射鏡6的振動同步變化，並供應於訊號處理部pRe 如上述’當轉印面Wa沿著投影光學系統PL之光轴ΑχBACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface position detecting device, an exposure device, and a device manufacturing method for detecting a position of a surface of a surface to be inspected. [Prior Art] The exposure device is configured to transfer a pattern formed on a photomask to a photosensitive substrate through a projection optical system, and a depth of focus of the projection optical system is shallow. A transfer surface of the photosensitive substrate (exposure surface) ) is not flat. Therefore, the exposure device must accurately perform the positioning adjustment of the transfer surface of the photosensitive substrate on the image forming surface of the projection optical system. In the face position detecting device, 'the position of the surface of the photosensitive substrate along the optical axis direction of the projection optical system (the position of the transfer surface) is known, for example, an oblique incidence type autofocus sensor is known (refer to the patent) Literature 丨). The oblique incident type autofocus sensor is configured to project a slit image from an oblique direction on a photosensitive substrate as a side to be inspected, and detect position information of a slit image formed by light reflected on a side to be inspected, according to the position Information is used to detect the position of the surface of the photosensitive substrate. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. 41-215015. SUMMARY OF THE INVENTION In the above-described oblique incident type autofocus sensor, an optical member in an optical system constituting an oblique incident type focus sensor is changed (position change) When the refractive index changes, etc., there is a problem that the position of the surface of the photosensitive substrate along the optical axis direction of the projection optical system 200937145 cannot be accurately detected. The present invention has been made in view of the above problems, and an object of the invention is to provide a surface position detecting device, an exposure device, and a device manufacturing method capable of detecting the position of a surface to be detected with high precision without being affected by variations in optical members. In order to solve the above problem, the surface position detecting device of the present invention includes a reference member having a reference surface provided in the vicinity of the detected surface, and a light transmitting optical system which is derived from the first! The measurement light of the i-th pattern on the pattern surface is guided to the detected surface to project the intermediate image of the third pattern onto the detected surface, and guide the reference light from the second pattern on the second pattern surface. To the reference surface, the intermediate image of the second pattern is projected onto the reference surface; and the light receiving optical system directs the measurement light reflected by the detected surface to the j-th observation surface to observe the first pattern Forming on the ith observation surface, guiding the reference light reflected by the reference surface to the second observation surface 'to form the observation image of the second pattern on the second observation surface; and detecting portion for And detecting second position information of the observation image of the second image on the first observation surface and second position information of the observation image of the second pattern on the second observation surface, according to the first position information and the 2 position information detects the position of the face of the detected surface. An exposure apparatus according to the present invention is for transferring a pattern onto a photosensitive substrate, comprising: the surface position detecting device of the present invention; and a positioning means, which is configured based on a detection result of the surface position detecting device Aligning at least one of a pattern surface of the pattern or a transfer surface of the photosensitive substrate; the surface position detecting device is configured to use at least one of a surface position of the pattern surface and a surface position of the transfer surface as the The position of the detection surface is checked 5 200937145. A method of manufacturing a device according to the present invention, comprising: exposing, by using the exposure apparatus i of the present invention, transferring a pattern to the photosensitive substrate 'developing step, and developing the photosensitive substrate on which the pattern is transferred, The transfer pattern layer $ corresponding to the shape of the @ case is formed on the surface of the photosensitive substrate, and the processing step passes through the transfer pattern layer to process the surface of the photosensitive substrate. In the surface position detecting device of the present invention, the reference light is guided to the second observation surface via the reference surface provided in the vicinity of the inspection side surface and the optical member common to the measurement light. As a result, the reference light does not include information on the movement of the side to be inspected, unlike the measurement light, but contains information on the influence of the change in the optical member as well as the measurement light. Therefore, for example, based on the amount of deviation of the observation image of the reference light, the detection error of the position of the surface of the detected surface due to the fluctuation of the optical member can be measured. Therefore, the surface position detecting device, the exposure device, and the element manufacturing method of the present invention can accurately detect the surface position of the detected surface based on the detection result of the observation image by the reference light and the detection result of the observation image by the measurement light. [Embodiment] An embodiment of the present invention will be described with reference to the drawings, and Fig. 1 is a schematic view showing a configuration of an exposure apparatus including a surface position detecting device according to an embodiment of the present invention. In Fig. 1, the direction of the optical axis AX of the projection optical system PL is the Z axis, the plane perpendicular to the optical axis AX is parallel to the plane of Fig. 1 is the axis of 200937145, and the plane perpendicular to the plane of Fig. 1 is the γ axis. In the embodiment, the surface position detecting device of the present invention is applied to the detection of the surface position of the photosensitive substrate of the exposure apparatus. The exposure apparatus of Fig. 1 includes an illumination system IL that illuminates illumination light (exposure light) emitted from a light source for exposure (not shown), and illuminates a reticle R as a mask of a predetermined pattern. The reticle R is held parallel to the XY plane on the reticle stage scale 8. The reticle stage Rs can be moved two-dimensionally along the χγ plane by the action of the driving system (not shown), and its position coordinates are measured by a reticle interferometer (not shown) and position control. The exposure light transmitted through the reticle R is formed on the surface (transfer surface) Wa of the wafer w of the photosensitive substrate by the projection exposure system PL. The wafer W is held along the χγ plane on the wafer stage ws. The wafer-loaded SWS can be leveled (in horizontal), Z-direction (focusing direction), moved in two dimensions along the χ γ plane, and rotated around the ' axis by the action of a driving system (not shown). Position measurement is performed by a wafer interferometer (not shown). ❹In order to transfer the circuit pattern provided on the pattern surface of the reticle R to each of the exposed areas on the transfer surface Wa of the wafer W, the exposure for each exposure area is imaged by the projection exposure system PL. Within the width of the depth of focus of the face, the alignment of the current exposure area must be performed. The reason is that the position of each point of the current exposure area along the optical axis 检测 can be detected, and the position of the surface of the exposure area can be determined and measured, and the wafer stage ws can be leveled according to the detection result and 2 The movement of the direction, and the leveling of the wafer w and the movement in the z direction. 200937145 Therefore, the exposure apparatus of the present embodiment includes a surface position detecting device for detecting the surface position of the exposure region. Referring to Fig. 1, the surface position detecting device of this embodiment is provided with a light source i for supplying light used for the detection. Generally, the surface of the wafer w on the surface to be inspected is covered with a film such as a photoresist. Therefore, in order to reduce the influence of the interference generated by the film, the light source 1 is preferably a white light source having a wide wavelength (for example, a lamp for supplying illumination light having a wavelength of 600 to 900 nm in width, or a supply of the same band) Field illumination light source, etc.). Further, as the light source 1, a light-emitting diode can also be used to supply light having a wavelength which is less sensitive to photoresist. The light from the light source 1 passes through the condensing lens 2, and enters the measurement light feed pupil 3 and the reference light feed pupil feed pupils 3 and 4, and the light from the condensing lens 2 is refracted. The action is biased towards the -z direction. In the emission surface (i-th pattern surface) 3a of the light-emitting aperture 3, for example, as shown in Fig. 2, a light-transmitting pattern having a plurality of light-transmitting slits S1 to S12 (first pattern) for measuring light is provided. In the emission surface (second pattern surface) 4a of the light-emitting aperture 4, for example, as shown in FIG. 2, a plurality of light-transmitting slits sn to S15 (second pattern) for reference light are provided. Further, the emitting surface 3a of the light-emitting aperture 3 and the emitting surface 43 of the light-emitting aperture 4 are arranged in parallel with each other. In Fig. 2, in the exit surface 3a, the direction parallel to the Y-axis of the global coordinate is the ^-axis, and the direction orthogonal to the ...-axis is the η-axis. The light-transmitting slits S1 to S15 are, for example, rectangular-shaped (slit-shaped) light-transmitting portions that are elongated and inclined at an angle of 45 degrees with respect to the χ1 direction and the yi direction, and are light-shielding portions in areas other than the light-width == . The light-transmitting slit slits S13 for measuring light are arranged at a predetermined pitch, and the light-transmitting slits 5 for reference light are set to the light-transmitting slits S1 to S12 for measuring light at intervals of y-side 200937145. The x 1 directions are arranged at a predetermined pitch. Further, the xl coordinate system of the light-transmitting slit S13 and the xl coordinate of the intermediate position of the light-transmitting slits S2 and S3 are the same as the xl coordinate of the xl coordinate system of the light-transmitting slit S14 and the intermediate position of the light-transmitting slits S6 and S7. In agreement, the x1 coordinate system of the light transmission slit S15 and the χ1 coordinate of the intermediate position of the light transmission slits S10 and S11 coincide. The light source 1 and the condensing lens 2 constitute an overall illuminating device for illuminating the light-transmitting slits S1 to S12 for measuring light and the light-transmitting slits S13 to S15 for reference light as a whole. The light passing through the light-transmitting slits S1 to S12 is used as measurement light for detecting the surface position of the wafer w. The light passing through the light-transmitting slits S13 to S15 is used as reference light for measuring the detection error of the surface position detecting device. Further, the shape, the number, the arrangement, the form, and the like of the light-transmitting slit can be variously modified, and the second pattern for specifying the measurement light and the second pattern for defining the reference light can be used in various forms. ~ The measurement light passing through the light transmission slits S1 to S12 and the reference light transmitted through S13 to S15 are transmitted through the second objective lens 5, the vibration mirror 6 as a scanning means, and the i-th objective lens 7 are incident on the second side. The objective lens 5 and the first objective lens 7 operate in coordination with each other to form a light-transmitting slit sn: medium: image at a predetermined magnification. The vibrating mirror 6 is placed in the first! The front focus position of the objective lens 7 can be wound as shown by the arrow in i, and the shaft is rotated. The epi-illumination 稜鏡8 is a columnar 稜鏡 member having a parallelogram cross section along the thousand faces. Into! In the second middle, 'the light path taken along the measuring line indicated by the solid line into the falling 稜鏡8 is reflected by the outside of the reflecting surface and 8^, then moved in the Z direction, and then along the exit surface 8d. (4) 200937145 Measure the optical path (measurement optical path in the xz plane) and shoot the wafer from the oblique direction. The surface is also the detection area A on the transfer side of the inspection side. This incident angle is set to a large angle of not more than 9 degrees above 80 degrees. On the other hand, the reference light Lr which is incident on the incident surface 8a of the exit pupil 8 along the reference optical path indicated by the dotted line in the middle of the line is swept by the reflective surface and "sequentially reflected and then moved in parallel in the z direction" from the exit surface 8d. The incident angle of the reflection surface 9a incident on the surface of the plane mirror 9 from the oblique direction along the reference optical path (the reference optical path in the XZ plane) indicated by the broken line in the figure is set to be the measurement light [the transfer surface of the claw In Fig. 3, the measurement optical path indicated by the solid line and the reference optical path indicated by the broken line are separated not only in the two directions but also in the γ direction. Thus, the light transmission slit S1 for measuring light is used. The intermediate image of ～S12 is incident on the detection area A. That is, in the detection area A, corresponding to the light-transmitting slits si to si2, the oblique direction extending at an angle of 45 degrees from the χ direction and the γ direction is formed at a predetermined pitch in the X direction. The measurement center of each of the measurement light irradiation areas corresponds to the detection point of the detection area 。. Further, the reflection of the intermediate image of the light-transmitting slits S13 to S15 is projected on the plane mirror 9 Face 9a, corresponding to the light transmission slits Si3 to S15, In the χ direction, three rectangular reference light irradiation regions extending in an oblique direction at 45 degrees in the X direction and the Υ direction are formed at a predetermined pitch. Thus, the plane mirror 9 is configured to have a reference near the transfer surface Wa as a reference. The reference member of the reflecting surface 9a of the surface. Further, the second objective lens 5, the vibrating mirror 6, the first objective lens 7, and the falling target 8 constitute a light transmitting optical system, and the light transmitting slit S1 from the emitting surface 3a is formed. S12 measurement light-guided transfer 200937145 After the surface Wa, the intermediate image of the light-transmitting slits S1 to S12 is projected onto the transfer surface, and the reference light from the light-emitting slits si 3 to S15 on the emission surface 4a is guided to the reflection. After the surface 9a, the intermediate image of the optical slits S13 to S15 is projected on the reflecting surface 9a. Here, the emitting surface 3a is disposed on the conjugate surface of the transfer surface Wa of the light transmitting optical system or a surface thereof, and the emitting surface 4a The measurement light Lm reflected by the transfer surface Wa and the reference light Lr reflected by the reflection surface 9a are incident on the exit pupil 18. The projection 稜鏡 is disposed on the conjugate surface of the reflection surface 9a of the light transmission optical system. 18, in the established 丫三平〇 (for example, γζ containing the optical axis AX The surface is disposed at a position symmetrical with the epitaxial ridge 8 and has a symmetrical structure. Specifically, the epitaxial cymbal 18 has a configuration in which the epitaxial ridge 8 is inverted with respect to the emission surface 8d. Therefore, it is incident on the epitaxial ridge. The measurement light Lm and the reference light on the incident surface 18a of the mirror 18 are sequentially reflected by the reflection surfaces 18b and 18c, and then moved in parallel in the z direction, and then emitted from the emission surface 18d. Referring to Fig. 1, the measurement light emitted from the epitaxial cymbal 18 The i-th objective lens 17, the mirror 16, and the second objective lens 15 are incident on the measurement light receiving beam 13. The reference light emitted from the epi-illumination beam 18 passes through the i-th objective lens, the mirror 16, and the second objective lens. 15. The reference light is received by the light receiving beam 14. The first mirror 17 , the mirror 16 , and the second objective lens 15 ′ are disposed on the predetermined γ ζ plane (for example, the YZ plane including the optical axis AX) and are respectively disposed on the second objective lens 7 , the vibrating mirror 6 , and the second objective lens 5 . Symmetrical position and symmetrical configuration. However, the mirror 16 is different from the vibrating mirror 6 and is fixedly disposed. The light-receiving prisms 13 and 14 are disposed in a predetermined γ-ζ plane (for example, a plane containing the optical axis )), and are disposed at positions 11 200937145 symmetrical to the light-emitting apertures 3 and 4, respectively, and have a symmetrical configuration. However, as shown in FIG. 4, the incident surface 13a of the receiving aperture 13 (the surface corresponding to the emitting surface 3a of the light-emitting aperture 3) is provided with 12 light-receiving slits Sal corresponding to the light-transmitting slits si to si2. ~Sal2. Further, as shown in FIG. 4, the entrance surface 14a of the receiving aperture 14 (the surface corresponding to the exit surface 送 of the light-emitting aperture 4) is provided with three light-receiving slits Sal3 corresponding to the light-transmitting slits S13 to S15. ~Sal5. In Fig. 4, the incident surface 13a of the receiving pupil 13 parallel to the incident surface 14a of the receiving aperture 14 is set to be y2 axis in a direction parallel to the γ-axis of the entire coordinate, and is incident on the incident surface 13a. The direction orthogonal to the y2 axis is set to χ2 axis. The light-receiving slits Sal to Sal5' are rectangular (slit-shaped) light-transmitting portions elongated in the oblique direction of 45 degrees from the Χ2 direction and the y2 direction, and the regions other than the light-receiving slits Sal to Sal5 are light-shielding portions. The light receiving slits Sal to Sal2 are arranged at a predetermined pitch along the x2 direction, and the light receiving slits Sal3 to Sal5 are disposed at intervals from the light receiving slits Sal to Sal 2 in the y2 direction and at a predetermined interval along the χ2 direction. arrangement. The observation image of the light-transmitting slits S1 to S12 is formed on the incident surface 13a' of the light receiving aperture 13 and the observation image of the light-transmitting slits S13 to S15 for reference light is formed on the incident surface 14a of the light receiving aperture 14 . In other words, the incident surface 13a' of the receiving aperture 13 corresponds to the light-transmitting slits S1 to S12, and 12 rectangular shapes extending obliquely in the oblique direction of 45 degrees from the χ2 direction and the y2 direction are formed at a predetermined pitch in the χ2 direction. The observation image was measured. Further, the incident surface 14a of the light-receiving prism 14 is formed in three rectangular shapes extending obliquely in the oblique direction of the x2 direction and the y2 direction at a predetermined pitch in the direction of the χ2 direction corresponding to the light-transmitting slits S13 to S15'. Observing the image. 12 200937145 Thus, the 'emission prism 18, the first objective lens 17, the mirror 16, and the second objective lens 15 constitute a light receiving optical system' for guiding the measurement light reflected by the transfer surface Wa to the incident surface of the light receiving beam 13 (first observation) After the surface 13a, the measurement observation image of the light transmission slits S1 to S12 is formed on the incident surface 13a, and the reference light reflected by the reflection surface 9a is guided to the incident surface (second observation surface) i4a of the light receiving aperture 14, and then The reference observation image of the light-transmitting slits S 13 to S 15 is formed on the incident surface. In other words, the light-receiving optical system and the light-transmitting optical system transmit the incident surface 13a' to the conjugate surface of the emitting surface 3a or the surface of the vicinity of the emitting surface 3a through the transfer surface Wa, and transmit the incident surface i4a through the reflecting surface 9a. On the other hand, it is disposed on the surface of the common surface of the exit surface 4a or in the vicinity thereof. Fig. 5 is a schematic view showing a configuration in which an optical path from a light-emitting aperture to a light-receiving beam is linearly expanded from a light source to a light receiving aperture. In order to facilitate understanding of the configuration from the light source 1 to the light receiving apertures 13, 14, the light transmitting optical system S1 composed of the second objective lens 5, the vibrating mirror 6, the first objective lens 7, and the epitaxial lens 8 is simplified into one lens. The light-receiving optical system j1 including the epi-illumination unit 18, the first objective lens 17, the mirror 16, and the second objective lens 15 is simplified into one lens, and the optical paths of the light-transmitting optical system SL and the light-receiving optical system JL are respectively linear. Expanded. Referring to Fig. 1, the measurement light incident on the light receiving aperture 3 passes through the light receiving slits Sal to Sal2, and is deflected only at a predetermined angle, and is emitted from the light receiving aperture 13. The reference light incident on the light receiving prism 14 passes through the light receiving slits sai3 to Sal5, and is deflected only at a predetermined angle, and is emitted from the light receiving aperture 14. The measurement light and the reference light emitted from the Shaoguang rafts 13 and 14 are transmitted through the relay lens 丨2, and the 13 200937145 conjugate images of the observation images of the light-transmitting slits S1 to S15 formed in the light-receiving slits Sal to Sal5 are respectively It is formed on the detecting surface 11a of the photodetector 11. As shown in FIG. 6, on the detection surface π a of the photodetector 11, the 15 light-receiving portions RS1 to RS15 are provided so as to receive the light-receiving slits Sal to Sal2 for the two measurement lights and the three reference beams. Slots Sal3~Sal5. The light receiving units RS1 to RS15 receive the light passing through the light receiving slits Sal to Sal5, respectively. In other words, the twelve light receiving units RS1 to RS12' receive the measurement light passing through the twelve light receiving slits Sal to Sal2 corresponding to the light transmitting slits si to S12, and the three light receiving portions RS13 to RS15' receive and pass the light transmitting slit S13. Reference light of the three light receiving slits Sal3 to Sal5 corresponding to S15.测定 The measurement observation image of the light-transmitting slits S 1 to S 12 moves in the X2 direction along the movement in the Z direction of the transfer surface Wa. On the other hand, the reference observation image of the light-transmitting slits S 13 to S 15 is different from the measurement observation image, and since it does not pass through the transfer surface Wa, it is not affected by the movement in the z direction along the transfer surface Wa. Therefore, the amount of light of the measurement light passing through the light receiving slits Sal to Sal2 changes in accordance with the movement of the transfer surface Wa in the Z direction. However, the amount of light passing through the light receiving slits Sal3 to Sal5 does not depend on the transfer surface Wa. The z direction moves and remains constant. In other words, the light passing through the light receiving slits Sal to Sal2 includes information on the movement of the transfer surface Wa in the Z direction. However, the reference light passing through the light receiving slits Sal3 to Sal5 does not include information on the movement of the transfer surface Wa2 z. . In the surface position detecting device of the present embodiment, the measurement observation image of the light-transmitting slits S1 to S12 is formed in the light-receiving slits sai to sai2 in a state where the transfer surface Wa coincides with the image plane of the projection optical system PL. The observation image of the position, reference light transmission slits S13 to S15 is formed at the position of the light receiving light 14 200937145 slits 3 & 13 to 8315. The detection signal of the light-receiving portion 11 § [1 to 1^15 changes in synchronization with the vibration of the vibrating mirror 6, and is supplied to the signal processing portion pRe as described above.] When the transfer surface Wa is along the optical axis of the projection optical system PL.
上下移動於ζ方向時，形成於受光稜鏡13之入射面13a的 測定觀測像，對應於轉印面Wa的上下移動而發生偏位於間 距方（x2方向）。在訊號處理部pR，例如依據本案申請人所 提出之日本特開平6-97045號公報所揭示之光電顯微鏡的 原理，檢測測定觀測像之偏位量，根據檢測出之偏位量算 出檢測區域A内之各檢測點之ζ方向位置。 但，如前述，依據構成面位置檢測裝置之光學構件之 位置變動或折射率變動，例如，不受轉印面Wa與投影光學 系統PL之成像面一致（最佳對焦狀態）的影響，形成於受光 稜鏡13之入射面13a的各測定觀測像的位置會有從分別 對應之受光狹縫Sal〜Sal2的位置偏位之情形。在此情形， 對應於各測定觀測像的位置從受光狹縫Sai~sai2之偏位 量，而發生轉印面Wa2面位置之檢測誤差。 本實施形態之面位置檢測裝置，由於來自送光狹縫 S15之參照光’經由設於轉印面Wa附近之反射面 導引至受光稜鏡14之人射面14a，因此，沿著與測定光路 近接之參照光路，經由與測定光共通之光學構件，形成參 照觀測像。因&，參照光，雖不同於測定光而未包含轉印 面Wa之Z方向移動之相關資訊，但與敎光同樣含有與 測定光共通之光學構件變動的影響之相關資訊。即，在最When moving up and down in the ζ direction, the observation observation image formed on the incident surface 13a of the receiving aperture 13 is shifted to the distance (x2 direction) in accordance with the vertical movement of the transfer surface Wa. In the signal processing unit pR, for example, according to the principle of the photomicroscope disclosed in Japanese Laid-Open Patent Publication No. Hei 6-97045, the amount of deviation of the measured observation image is detected, and the detection area A is calculated based on the detected amount of deviation. The position of each detection point in the ζ direction. However, as described above, depending on the positional variation or the refractive index fluctuation of the optical member constituting the surface position detecting device, for example, it is not affected by the matching of the transfer surface Wa and the imaging surface of the projection optical system PL (best focus state), and is formed by the light receiving. The position of each measurement observation image of the incident surface 13a of the crucible 13 may be displaced from the positions of the respective light receiving slits Sal to Sal2. In this case, the detection error of the surface position of the transfer surface Wa2 occurs in accordance with the offset amount of the position of each measurement observation image from the light receiving slits Sai to sai2. In the surface position detecting device of the present embodiment, since the reference light 'from the light transmitting slit S15 is guided to the human face 14a of the receiving pupil 14 via the reflecting surface provided in the vicinity of the transfer surface Wa, the measurement and the optical path are along The reference optical path that is in close proximity forms a reference observation image via an optical member that is common to the measurement light. The reference light does not include information on the Z-direction movement of the transfer surface Wa, unlike the measurement light, but contains information on the influence of the variation of the optical member common to the measurement light, similarly to the light. That is, at the most
佳對焦狀態下，來昭#挤勒+ Α Λ A 队卜參照光所形成之各參照觀測像的位置從分 15 200937145 別對應之受光狭缝Sal3〜Sal5之偏位量，係與在最佳對焦 狀態下測定光所形成之各測定觀測像的位置從分別對應之 受光狹缝Sal〜Sal2之偏位量大致相等。因此，本實施形態 之面位置檢測裝置，根據各參照觀測像的位置從分別對應 之受光狹縫Sal3〜Sal5之偏位量，可測量轉印面Wa之面位 置之檢測誤差’以進行校正。 又，本實施形態之面位置檢測裝置，由於入射面⑴ 透過轉印® Wa而配置於㈣面3a之隸面或其附近之 面’故可將各測定觀測像鮮明形成於人射面⑴上由於入❹ 射面…透過反射面％而配置於射出面鈍之共輛面或其附 近之面，故可將各參照觀測像鮮明形成於人射面14a上。因 此’本實施形態之面位置檢測裳置，可高精度測量轉印面 在最佳對焦狀態或接近此狀態時之轉印面1之面位置 之檢測誤差，根據此測量結果，可高精度校正轉印面Wa之 面位置之檢測誤差。 訊號處理部PR，根據來 夕认 ㈣來自乂光部RS1〜RS12之測定光 ❹ 之相關資訊，檢測與12個 也 ^ t 疋光用之送光狹縫S1〜S12對 應之12個檢測點之z方向办里 如抱诚“丘 置。又，訊號處理部PR，例 如’根據來自受光部rS13 # μ μ ςι 參“、、光之相關資訊，測量與送 光狹缝S1〜S4對應之4個檢 J點之Ζ方向位置之檢測誤差。 同樣地，訊號處R㈣Η ^ ^ ng ^ . . ΒΗ 根據來自受光部RS14及15 檢測點之ζ方向位送域縫S5〜S8對應之4個 S9~si2 測誤差，以及測量與送光狹縫 W〜S12對應之4個檢測點 ’’ 方向位置之檢測誤差。又， 16 200937145 訊號處理部PR，根據各檢測點之檢測誤差之測量結果，校 正各檢測點之Z方向位置之檢測結果。訊號處理部pR之校 正檢測結果，係供應於控制部CR。 控制部CR，根據訊號處理部pR所獲得之校正檢測結 果，僅以所要量調整晶圓載台WS之z方向位置，將轉= 面Wa上之檢測區域a及晶圓w現在之曝光區域與投影光 學系統PL之成像面位置（最佳對焦位置）進行對位如此， 受光稜鏡13及14、中繼透鏡12、光檢測器u、及訊號處 © 理部PR構成檢測部，以檢測位於受光稜鏡13之入射面13a 之測定光用之送光狹縫S1〜S12之觀測像之位置資訊，根據 該位置資訊檢測轉印面Wa之面位置，並且，檢測位於受光 稜鏡14之入射面！4a之參照光用之送光狹縫S13〜S15之觀 測像之位置資訊，根據該位置資訊校正轉印面Wa之面位置 之檢測結果。 如上述’本實施形態之面位置檢測裝置，藉由測量構 成面位置檢測裝置之光學構件變動所造成之檢測誤差，不 ® 受光學構件變動的影響，可高精度檢測轉印面Wa之面位 置。因此’本實施形態之曝光裝置’可高精度檢測晶圓w 之轉印面Wa之面位置，以及將轉印面wa高精度對位於與 標線片R之圖案面對應之投影光學系統PL之成像面。 又’在上述實施形態，雖將設有測定光用之送光狹縫 S1〜S12(第1圖案）之送光棱鏡（第1圖案構件）3、與設有參 照光用之迭光狹縫Si3〜S15之送光稜鏡（第2圖案構件）4別 體設置’但，亦可將送光稜鏡3與4設成一體之稜鏡。同 17 200937145 樣地’雖將具有入射面（第1觀測面）l3a之受光稜鏡（第1觀 測構件）13、與具有入射面（第2觀測面）14a之受光棱鏡（第2 觀測構件）14別體設置，但，亦可將受光稜鏡1 3與14 一體 設置。藉由將送光棱鏡3與4 一體化、及將受光稜鏡丨3與 14 一體化，可提高送光狹缝si〜S12與送光狹縫S13〜S15 間之位置穩定性、及受光狹縫Sal〜Sal2與受光狹縫 Sa 13〜Sal5間之位置穩定性’並可更穩定且高精度測量、校 正轉印面W a之面位置之檢測誤差。 除了將送光棱鏡一體化之外，亦可進一步具備送光圖 ❹ 案構件’其具有共通圖案面’該共通圖案面設有測定光用 之送光狹縫S1〜S 12與參照光用之送光狹縫S13〜S 15。同樣 地’除了將受光棱鏡一體化之外，亦可具備參照構件，其 具有共通觀測面’該共通觀測面包含供形成測定觀測像之 第1觀測面與供形成參照觀測像之第2觀測面。以下，參 照圖7,說明具有共通圖案面之送光圖案構件與具有共通觀 測面之觀測構件之變形例。圖8係與圖5同樣，表示圖7 之變形例之從送光稜鏡至受光稜鏡之光路直線狀展開、從 〇 光源至受光稜鏡為止之構成概略圖。 圖7之變形例，係具有與圖1之實施形態類似之構成。 心而’圖7之變形例中，取代一對送光稜鏡3、4而具備共 通送光稜鏡21'以及取代一對受光棱鏡而具備共通受光棱 鏡24之點’係與圖1之實施形態基本上不同。圖7及圖8 中’與圖1及圖5之要件具有同樣功能之構成要件，附上 與圖1及圖5相同之參照符號。以下，針對與圖1之實施 18 200937145 形態之相異點，說明圖7之變形例之構成及作用。 圖7之變形例’來自光源1之光，透過聚光透鏡2射 入共通送光稜鏡21。共通送光稜鏡21，係將來自聚光透鏡 2之光束’利用折射作用使其朝—z方向偏向。在共通送光 稜鏡21之作為共通圖案面之射出面21&，例如將圖2所示 之12個測定光用之送光狹縫s丨~s丨2與3個參照光用之送 光狹縫S1 3〜S15設於同一平面内。 通過送光狹縫S1〜S12之測定光，係透過平行平面板 ® 22、第2物鏡5、振動反射鏡6、帛i物鏡7、及落射稜鏡 8，射入轉印面Wa。通過送光狹縫S13〜Sl5之參照光未 通過平行平面板22，透過第2物鏡5、振動反射鏡6、第1 物鏡7、及落射稜鏡8，射入平面反射鏡9之反射面％。 被轉印面Wa反射之測定光，透過落射稜鏡18、第i 物鏡17、反射鏡16、帛2物鏡15、及平行平面板23，射 入共通受光稜鏡24。被平面反射鏡9之反射面“反射之參 照光，透過落射稜鏡18、第丨物鏡17、反射鏡16、第2物 鏡15,未通過平行平面板23,射入共通受光稜鏡μ。平行 平面板23 ’於既定之γζ平面（例如，包含光軸之γζ 平面）配置於與平行平面板22對稱的位置且具有對稱之構 成。 、又，共通受光稜鏡24,於既定2ΥΖ平面（例如，包含 光轴ΑΧ之ΥΖ平面）配置於與共通送光棱鏡21對稱的位: 且具有對稱之構成。但，在共通受光稜鏡24之人射面 共通送光稜鏡21之射出面21a對應之面），將圖4所示之 19 200937145 12個受光狹縫Sal〜Sal2與3個受光狹縫Sal3〜Sal5設於同 一平面内。如此’在共通受光稜鏡24之作為共通觀測面之 入射面24a’形成測定光用之送光狹縫S1〜S12之觀測像與 參照光用之送光狹縫S 1 3〜S 1 5之觀測像。 射入共通受光稜鏡24之測定光及觀測光，分別通過受 光狹縫Sal〜Sal2與受光狹缝Sal3〜Sal5，僅偏向既定角度 後’分別從共通受光稜鏡24射出。從共通受光稜鏡24射 出之測定光及觀測光’透過中繼透鏡12,將送光狹縫si〜S15 之觀測像與受光狹縫Sal3〜Sal5之共軛像，形成於光檢測 ◎ 器11之檢測面11 a上。 在圖7之變形例中，配置於送光側之測定光路中之平 行平面板22，具有作為送光侧之面位置校正構件之作用， 以校正形成有測定光用之送光狹縫S1〜S12之第i圖案面 (相當於上述射出面3a) '與形成有參照光用之送光狹縫 S 13〜S15之第2圖案面（相當於上述射出面4a)之相對位置， 使該第1圖案面之面位置與第2圖案面之面位置一致。即， :行平面板22,在將從第i圖案面至第2物鏡5為止之測 〇 定光之光路長度（空氣換算長），設成相等於圖1之實施形態 之從射出面3a至第2物鏡5為止之測定光之光路長度之狀 態下，使第1圖案面與第2圖案面之面位置一致。 另一方面，配置於受光側之測定光路中之平行平面板 U ’具有作為受光側之面位置校正構件之作用，以校正供 /成有測疋光用之送光狹縫s丨〜s丨2之測定觀測像之第1觀 測面(相當於上述射出面13a)、與供形成參照光用之送光狹 20 200937145 縫S13〜S15之參照觀測像之第2觀測面（相當於上述射出面 14a)之相對位置，使該第！觀測面之面位置與第2觀測面之 面位置一致。即，平行平面板23,在將從第2物鏡15至第 1觀測面為止之測定光之光路長度（空氣換算長），設成相等 於圖1之實施形態之從第2物鏡15至入射面13a為止之測 定光之光路長度之狀態下，使第丨觀測面與第2觀測面之 面位置一致。 如此’圖7之變形例’相較於圖1所示之實施形態’ © 藉由作為送光侧之面位置校正構件之平行平面板22之作 用，使第1圖案面之面位置移動於送光光學系統之光軸方 向使其與第2圖案面之面位置一致，並且，藉由作為受光 側之面位置校正構件之平行平面板23之作用，使第丨觀測 面之面位置移動於受光光學系統之光軸方向使其與第2觀 測面之面位置一致》其結果，可提高送光狹縫si〜si2(測定 用圖案）與送光狹縫S13〜S15(參照用圖案）間之位置穩定 ❹眭、及受光狹縫Sal〜Sal2與受光狹縫Sal3〜Sal5間之位置 穩疋性，並可更穩定且高精度測量、校正轉印面Wa之面位 置之檢測誤差。 又，圖7之變形例，雖使第丨圖案面之面位置與第2 圖案面之面位置一致，並使第1觀測面之面位置與第2觀 ^之面位置一致’但，未限於使該等面位置，相較於圖1 所不之實施形態，藉由第丨圖案面之面位置靠近第2圖案 面之面位置，以及使第1觀測面之面位置靠近第2觀測面 之面位置，可較圖1所示之實施形態以更穩定且高精度測 21 200937145 量、校正轉印面Wa之面位置之檢測誤差。 又，圖7之變形例，作為面位置校正構件雖使用配置 於測定光路中之平行平面22、23，但未限於此，亦可將 面位置校正構件之具體構成、數量、位置等設成各種型態。 一般而言，面位置校正構件亦可包含光透射構件，設於測 定光之光路與參照光之光路至少一方’並使入射面及射出 面垂直於送光光學系統之光軸或受光光學系統之光軸。 又，面位置校正構件亦可包含平行平板狀之光透射構 件，設於測定光之光路與參照光之光路至少一方，且對送 ❹ 光光學系統之光軸或受光光學系統之光軸傾斜配置。作為 一例，如圖9所示，可在共通圖案面213與送光光學系統 SL間之參照光路中，將對送光光學系統SL傾斜配置之平 行平面板25作為送光側之面位置校正構件，在受光光學系 統JL與入射面24a間之參照光路中，將對受光光學系統几 傾斜配置之平行平面板26作為受光側之面位置校正構件。 又，面位置校正構件亦可包含光偏向構件，設於測定 光之光路與參照光之光路至少一方，用以使測定光與參照 ◎ 光的相對角度變化《作為一例，如圖1〇所示，可將配置= 送光光學系統SL中（例如第2物鏡5與第丨物鏡7之間）之 參照光路使參照光透射過後加以偏向之偏角棱鏡27作為送 光側之面位置校正構件，將配置於受光光學系統几中（例如 第1物鏡17與第2物鏡15之間）之參照光路使參照光透射 過後加以偏向之偏角稜鏡28作為受光侧之面位置校正構 件。進而，亦可將上述不同類型之複數個面位置校正構件 22 200937145 加以組0在送光光學系統與受光光學系統使用不同類型 之面位置校正構件。 又，圖1之實施形態與圖7之變形例，雖使用平面反 射鏡9作為參照構件（具有設於作為被檢測面之轉印面 附近之參照面），但未限於此，亦可將參照構件之構成設成 各種形態。例如，可使用如圖U所示之3次反射型之棱鏡 31作為參照構件。在此情形，從落射稜鏡8射入稜鏡31之 入射面31a之參照光Lr’被反射面31b反射後，射入與χγ Ο 平面平行之作為參照面之反射面31c。參照光對該反射面 3 lc之入射角，設為小於參照光對圖丨之實施形態之反射面 9a之入射角。 被反射面31c反射之參照光Lr，以反射面31d反射後， 從射出面31e朝落射棱鏡18射出。又，圖llf，雖以使作 為參照面之反射面31c為上側之姿勢進行棱鏡31之定位， 但，亦能以上下相反之姿勢，亦即將作為參照面之反射面 31c為下側之姿勢來使用稜鏡31。3次反射型之稜鏡31，具 有3個反射面31b、31c、31d’入射面31a及射出面3ie之 各法線係設成平行於XZ平面。 又’在使用3次反射型之稜鏡31之情形，例如，可如 圖16所示般使參照光Lr射入。即，從落射稜鏡8射出之參 照光Lr，可藉由落射稜鏡8之射出面8d或設於其附近之偏 角稜鏡（楔形稜鏡）51加以偏向後，射入稜鏡31之入射面 31a。接著，從稜鏡31之射出面31e射出之參照光Lr，透 過落射稜鏡18之入射面18a或設於其附近之偏角稜鏡（楔形 23 200937145 棱鏡）52加以偏向後，射入入射面iga。 藉此’可將射入與測定光Lm平行之落射稜鏡8之參照 光Lr ’藉由偏角稜鏡5 1加以偏向，在沿著χζ平面且對測 定光Lm呈傾斜之狀態下射入棱鏡3丨。又，可將沿著χζ平 面且對測定光Lm呈傾斜之從棱鏡3 1射出之參照光Lr，藉 由偏角稜鏡52加以偏向後，射入與測定光Lm平行之落射 稜鏡18。 又，圖16中’測定光Lm與參照光Lr，係在從γ方向 觀之呈重疊之狀態下射入落射稜鏡8，同樣地，在從γ方向 0 觀之呈重疊之狀態下自落射稜鏡18射出。又，偏角稜鏡51、 52 ’係設成使測定光Lm及參照光Lr中僅使參照光Lr透射 過。 又’亦可使用如圖12所示之1次反射型之稜鏡32作 為參照構件。在此情形，從落射稜鏡8射入稜鏡32之入射 面32a之參照光Lr ’係射入平行於χγ平面之作為參照面 之反射面32b。參照光對該反射面32b之入射角，係小於參 照光對圖1之實施形態之反射面9a之入射角。被反射面32b ❹ 反射之參照光Lr，係從射出面32c朝落射稜鏡18射出。！ 次反射型之棱鏡32’係具有1個反射面32b，入射面32a 及射出面32c之各法線係設成平行於χζ平面。在此，當使 用3次反射型之稜鏡31或1次反射型之稜鏡32之情形， 相較於使用平面反射鏡9之情形’為了避免在測定光Lm與 參照光Lr之間產生光路長度（空氣換算長）之差，可使稜鏡 31、32之形狀或折射率（玻璃之折射率）最佳化，或在測定 24 200937145 光化及參照光卜之至少一 玖j奋元路中配置用以校正其光 路長度之差之光學構件（例如 具尤 光對作為仃千面板）。又，由於參照 尤對作為參照面之反射面 # ^ . Q Kb之入射角，係小於參照 尤對反射面9a之入射角， 月因此’當使用複數個參 送光狹縫時，相較於使用平面 翏…先用之 卞面汉射鏡9，更易於確保參昭面 沿者X方向所需之長度。 、In the state of good focus, the position of each reference observation image formed by the reference light from the reference group is from 15 to 1537, and the offset amount of the light-receiving slits Sal3 to Sal5 is the best. The position of each measurement observation image formed by the measurement light in the in-focus state is substantially equal to the offset amount of the corresponding light receiving slits Sal to Sal2. Therefore, the surface position detecting device of the present embodiment can measure the detection error of the surface position of the transfer surface Wa by the displacement amount of each of the light receiving slits Sal3 to Sal5 corresponding to the position of each of the reference observation images. Further, in the surface position detecting device of the present embodiment, since the incident surface (1) is placed on the surface of the (4) face 3a or the vicinity thereof by the transfer|transfer® Wa, the measurement observation image can be clearly formed on the human face (1). Since the entrance surface is placed on the common surface of the blunt surface of the emission surface or the vicinity thereof through the reflection surface %, each reference observation image can be clearly formed on the human surface 14a. Therefore, the position detection of the present embodiment is performed, and the detection error of the transfer surface in the optimum focus state or the position of the transfer surface 1 close to this state can be measured with high precision, and the transfer surface can be corrected with high precision based on the measurement result. The detection error of the position of the Wa surface. The signal processing unit PR detects 12 detection points corresponding to the 12 light-emitting slits S1 to S12 for the twilight light, based on the information related to the measurement pupils from the light-emitting portions RS1 to RS12. In the direction of the z direction, if you are in a hurry, the signal processing unit PR, for example, 'measured by the light receiving unit rS13 #μ μ ς ”, and the light, and the light transmission slits S1 to S4 Check the detection error of the position of the J point. Similarly, the signal R (four) Η ^ ^ ng ^ . . ΒΗ 4 S9~si2 measurement errors corresponding to the slanting direction from the light receiving portions RS14 and 15, and the measurement and light transmission slits W ~S12 corresponds to the detection error of the four detection points '' direction position. Further, 16 200937145 The signal processing unit PR corrects the detection result of the Z-direction position of each detection point based on the measurement result of the detection error of each detection point. The correction result of the signal processing unit pR is supplied to the control unit CR. The control unit CR adjusts the position of the wafer stage WS in the z direction by the required amount based on the correction detection result obtained by the signal processing unit pR, and turns the detection area a on the rotation surface Wa and the current exposure area and projection of the wafer w. The imaging plane position (best focus position) of the optical system PL is aligned, and the receiving apertures 13 and 14, the relay lens 12, the photodetector u, and the signal processing unit PR constitute a detecting portion to detect the light receiving position. The positional information of the observation image of the light-transmitting slits S1 to S12 for measuring light on the incident surface 13a of the crucible 13 is used to detect the surface position of the transfer surface Wa based on the position information, and to detect the incident surface on the receiving aperture 14! The position information of the image of the light-receiving slits S13 to S15 for the reference light of 4a is used to correct the detection result of the surface position of the transfer surface Wa based on the position information. As described above, the surface position detecting device of the present embodiment can detect the detection error caused by the variation of the optical member constituting the surface position detecting device, and the surface position of the transfer surface Wa can be accurately detected without being affected by the fluctuation of the optical member. Therefore, the exposure apparatus of the present embodiment can detect the position of the surface of the transfer surface Wa of the wafer w with high precision, and accurately transfer the transfer surface wa to the image plane of the projection optical system PL corresponding to the pattern surface of the reticle R. . Further, in the above-described embodiment, the light-transmitting prism (first pattern member) 3 for providing the light-transmitting slits S1 to S12 (first pattern) for measuring light and the slit slit for providing reference light are provided. The light feeds (second pattern members) 4 of Si3 to S15 are provided separately. However, the light feeds 3 and 4 may be integrally formed. In conjunction with the 17th 200937145 sample, the receiving surface (first observation surface) l3a receives the light receiving beam (first observation member) 13 and the incident surface (second observation surface) 14a receiving prism (second observation member). 14 is set separately, but the receivers 1 3 and 14 can also be set together. By integrating the light-transmitting prisms 3 and 4 and integrating the light-receiving beams 3 and 14, the positional stability between the light-transmitting slits si to S12 and the light-transmitting slits S13 to S15 can be improved, and the light receiving narrowness can be improved. The positional stability between the slits Sal~Sal2 and the light receiving slits Sa13 to Sal5' can be measured more stably and accurately, and the detection error of the position of the transfer surface Wa is corrected. In addition to integrating the light-transmitting prism, the light-transmitting pattern member may be further provided with a common pattern surface. The common pattern surface is provided with light-transmitting slits S1 to S12 for measuring light and reference light. Light sending slits S13 to S15. Similarly, 'in addition to integrating the light-receiving prism, a reference member having a common observation surface' including a first observation surface for forming a measurement observation image and a second observation surface for forming a reference observation image may be provided. . Hereinafter, a modification of the light-transmitting pattern member having the common pattern surface and the observation member having the common observation surface will be described with reference to Fig. 7 . Fig. 8 is a schematic view showing the configuration of the optical path from the light-emitting aperture to the light-receiving unit in a linear manner from the 光源 light source to the light receiving ridge, similarly to Fig. 5; The modification of Fig. 7 has a configuration similar to that of the embodiment of Fig. 1. In the modification of FIG. 7 , a common light-emitting aperture 21 ′ is provided instead of the pair of light-emitting apertures 3 and 4 , and a point ′ of the common light-receiving prism 24 is provided instead of the pair of light-receiving prisms and the implementation of FIG. 1 . The shape is basically different. In Figs. 7 and 8, the components having the same functions as those of Figs. 1 and 5 are denoted by the same reference numerals as in Figs. 1 and 5. Hereinafter, the configuration and operation of the modification of Fig. 7 will be described with respect to the difference from the embodiment of Fig. 1 . The modification of Fig. 7 'light from the light source 1 passes through the condensing lens 2 and enters the common transmission aperture 21. The common transmission aperture 21 deflects the light beam ' from the condensing lens 2 toward the -z direction by refraction. For example, the light-emitting slits s 丨 s 丨 丨 丨 与 与 与 与 与 与 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共 共The slits S1 3 to S15 are disposed in the same plane. The measurement light passing through the light-transmitting slits S1 to S12 is transmitted through the parallel plane plate ® 22, the second objective lens 5, the vibrating mirror 6, the objective lens 7, and the falling pupil 8, and is incident on the transfer surface Wa. The reference light passing through the light-transmitting slits S13 to S15 passes through the parallel plane plate 22, passes through the second objective lens 5, the vibrating mirror 6, the first objective lens 7, and the falling pupil 8, and enters the reflecting surface of the plane mirror 9 . The measurement light reflected by the transfer surface Wa passes through the exit pupil 18, the i-th objective lens 17, the mirror 16, the objective lens 15 and the parallel plane plate 23, and enters the common light receiving aperture 24. The reflected light reflected by the plane of the plane mirror 9 passes through the exit pupil 18, the second objective lens 17, the mirror 16, and the second objective lens 15, and passes through the parallel plane plate 23, and enters the common light receiving aperture μ. The plane plate 23' is disposed at a position symmetrical with the parallel plane plate 22 at a predetermined gamma plane (for example, a gamma plane containing the optical axis) and has a symmetrical configuration. Further, the common receiving aperture 24 is in a predetermined plane (for example, The plane including the optical axis ) is disposed at a position symmetrical with the common light-transmitting prism 21: and has a symmetrical configuration. However, the output surface 21a of the common-surface-transmitting aperture 21 of the common-receiving light-receiving unit 24 corresponds to On the other hand, the 19 light-receiving slits Sal~Sal2 and the three light-receiving slits Sal3 to Sal5 shown in Fig. 4 are placed in the same plane. Thus, the incident light-receiving surface 24 is incident on the common observation surface. The surface 24a' forms an observation image of the observation image of the light-transmitting slits S1 to S12 for measuring light and the light-transmitting slits S1 3 to S 1 5 for the reference light. The measurement light and observation of the incident light receiving aperture 24 Light, passing through the light receiving slits Sal~Sal2 and receiving light The slits Sal3 to Sal5 are emitted from the common light receiving aperture 24 only after being deflected to a predetermined angle. The measurement light and the observation light emitted from the common light receiving aperture 24 pass through the relay lens 12, and the light transmission slits si to S15 are observed. The conjugate image of the light receiving slits Sal3 to Sal5 is formed on the detecting surface 11a of the light detecting device 11. In the modified example of Fig. 7, the parallel flat plate 22 is disposed in the measuring optical path on the light transmitting side. The surface position correcting member serving as the light transmitting side functions to correct the i-th pattern surface (corresponding to the above-described emitting surface 3a) ′ in which the light-transmitting slits S1 to S12 for measuring light are formed, and to send the reference light. The relative position of the second pattern surface (corresponding to the emission surface 4a) of the light slits S13 to S15 is such that the surface position of the first pattern surface coincides with the surface position of the second pattern surface. That is, the row plane plate 22 is formed. The optical path length (air conversion length) of the measurement and fixation light from the i-th pattern surface to the second objective lens 5 is set to be equal to the measurement light from the emission surface 3a to the second objective lens 5 in the embodiment of FIG. In the state of the optical path length, the surface position of the first pattern surface and the second pattern surface is set to On the other hand, the parallel plane plate U' disposed in the measuring optical path on the light receiving side functions as a surface position correcting member on the light receiving side to correct the light supply slit s丨~s for supplying/measuring the light. The second observation surface (corresponding to the above-mentioned emission) of the first observation surface (corresponding to the above-described emission surface 13a) of the observation image of the 丨2, and the reference observation image for the light transmission slit 20 200937145 slit S13 to S15 for forming the reference light The relative position of the surface 14a) is such that the surface position of the second observation surface coincides with the surface position of the second observation surface. That is, the parallel plane plate 23 measures light from the second objective lens 15 to the first observation surface. The length of the optical path (longer in air conversion) is set to be equal to the length of the optical path of the measurement light from the second objective lens 15 to the incident surface 13a in the embodiment of Fig. 1, and the second observation surface and the second observation surface are formed. The position is the same. Thus, the "modified example of FIG. 7" is moved to the surface of the first pattern surface by the action of the parallel plane plate 22 as the surface position correcting member on the light-transmitting side as compared with the embodiment shown in FIG. The optical axis direction of the optical optical system is aligned with the surface position of the second pattern surface, and the surface position of the second observation surface is moved to the light receiving by the parallel plane plate 23 as the surface position correcting member on the light receiving side. The optical axis direction of the optical system is aligned with the surface position of the second observation surface. As a result, the light-transmitting slits si to si2 (measurement pattern) and the light-transmitting slits S13 to S15 (reference pattern) can be improved. The position is stable, and the position between the light receiving slits Sal to Sal2 and the light receiving slits Sal3 to Sal5 is stable, and the detection error of the position of the transfer surface Wa can be measured and corrected more stably and accurately. Further, in the modification of Fig. 7, the position of the surface of the second pattern surface coincides with the position of the surface of the second pattern surface, and the position of the surface of the first observation surface coincides with the position of the surface of the second observation surface. The position of the surface of the first observation surface is closer to the second observation surface by the position of the surface of the second pattern surface close to the surface of the second pattern surface compared to the embodiment of FIG. The surface position can be measured more stably and accurately than the embodiment shown in FIG. 1 by measuring the amount of 21 200937145 and correcting the detection position of the surface of the transfer surface Wa. Further, in the modification of FIG. 7, the parallel position planes 22 and 23 disposed in the measurement optical path are used as the surface position correction member. However, the present invention is not limited thereto, and the specific configuration, number, position, and the like of the surface position correction member may be various. Type. In general, the surface position correcting member may include a light transmitting member provided at least one of the optical path of the measuring light and the reference light, and the incident surface and the emitting surface are perpendicular to the optical axis of the light transmitting optical system or the light receiving optical system. Optical axis. Further, the surface position correcting member may include a parallel plate-shaped light transmitting member provided in at least one of the optical path of the measuring light and the reference light, and disposed obliquely to the optical axis of the optical optical system or the optical axis of the light receiving optical system. . As an example, as shown in FIG. 9 , in the reference optical path between the common pattern surface 213 and the light-transmitting optical system SL, the parallel plane plate 25 disposed obliquely to the light-transmitting optical system SL can be used as the light-emitting side surface position correcting member. In the reference optical path between the light receiving optical system JL and the incident surface 24a, the parallel plane plate 26 which is disposed obliquely to the light receiving optical system is used as the surface position correcting member on the light receiving side. Further, the surface position correcting member may include a light deflecting member provided in at least one of the optical path of the measuring light and the reference light to change the relative angle between the measuring light and the reference ◎ light, as an example, as shown in FIG. The reference beam path in the light-distributing optical system SL (for example, between the second objective lens 5 and the second objective lens 7) can be deflected by the reference light, and the off-angle prism 27 can be deflected as the light-receiving surface position correcting member. The reference optical path disposed in the light-receiving optical system (for example, between the first objective lens 17 and the second objective lens 15) transmits the reference light and deflects the yaw angle 28 as the light-receiving surface position correcting member. Further, a plurality of surface position correcting members 22 200937145 of the above-described different types may be grouped 0 to use different types of surface position correcting members in the light transmitting optical system and the light receiving optical system. Moreover, in the embodiment of FIG. 1 and the modification of FIG. 7, the plane mirror 9 is used as a reference member (having a reference surface provided in the vicinity of the transfer surface as the detection surface), but the present invention is not limited thereto, and the reference member may be used. The configuration is set in various forms. For example, a prism 3 of the third-order reflection type as shown in Fig. U can be used as the reference member. In this case, the reference light Lr' which is incident on the incident surface 31a of the crucible 31 from the epi-illumination 8 is reflected by the reflection surface 31b, and then enters the reflection surface 31c which is a reference surface parallel to the plane of the χγΟ. The incident angle of the reference light to the reflecting surface 3 lc is set to be smaller than the incident angle of the reflecting surface 9a of the embodiment of the reference light pair. The reference light Lr reflected by the reflecting surface 31c is reflected by the reflecting surface 31d, and is then emitted from the emitting surface 31e toward the falling prism 18. Further, in FIG. 11f, the prism 31 is positioned such that the reflection surface 31c as the reference surface is on the upper side. However, the posture may be reversed, that is, the reflection surface 31c as the reference surface may be the lower posture. Using the 稜鏡31.3 reflection type 稜鏡31, the respective normal lines having the three reflection surfaces 31b, 31c, 31d' the entrance surface 31a and the exit surface 3ie are arranged parallel to the XZ plane. Further, in the case where the three-reflection type 稜鏡 31 is used, for example, the reference light Lr can be incident as shown in Fig. 16 . That is, the reference light Lr emitted from the exit pupil 8 can be deflected by the exit surface 8d of the exit pupil 8 or the yaw angle 楔 (wedge shape) 51 provided in the vicinity thereof, and then incident on the 稜鏡 31 Incident surface 31a. Then, the reference light Lr emitted from the exit surface 31e of the crucible 31 is deflected by the incident surface 18a of the epitaxial crucible 18 or the yaw angle 稜鏡 (wedge 23 200937145 prism) 52 provided in the vicinity thereof, and is incident on the incident surface. Iga. Thereby, the reference light Lr' incident on the falling pupil 8 parallel to the measurement light Lm can be deflected by the yaw angle 稜鏡5 1 and injected under the state in which the measurement light Lm is inclined along the pupil plane. The prism is 3 inches. Further, the reference light Lr emitted from the prism 3 1 which is inclined along the pupil plane and inclined to the measurement light Lm can be deflected by the yaw angle 稜鏡 52, and then incident on the falling pupil 18 parallel to the measurement light Lm. In addition, in FIG. 16, the measurement light Lm and the reference light Lr are incident on the falling pupil 8 in a state of being overlapped from the γ direction, and similarly, the self-ejecting is performed in a state of being overlapped from the γ direction.稜鏡18 shot. Further, the yaw angles 51, 52' are such that only the reference light Lr is transmitted among the measurement light Lm and the reference light Lr. Further, a primary reflection type cymbal 32 as shown in Fig. 12 can be used as a reference member. In this case, the reference light Lr' incident from the entrance pupil 32 on the incident surface 32a of the pupil 32 is incident on the reflection surface 32b which is a reference plane parallel to the χγ plane. The incident angle of the reference light to the reflecting surface 32b is smaller than the incident angle of the reference light to the reflecting surface 9a of the embodiment of Fig. 1. The reference light Lr reflected by the reflecting surface 32b is emitted from the emitting surface 32c toward the exit pupil 18. ! The sub-reflective prism 32' has one reflecting surface 32b, and the normal lines of the incident surface 32a and the emitting surface 32c are arranged parallel to the meandering plane. Here, when the triple reflection type 31 or the first reflection type of the crucible 32 is used, compared with the case where the plane mirror 9 is used, 'in order to avoid the light path between the measurement light Lm and the reference light Lr The difference between the length (length of air conversion) can optimize the shape or refractive index of the crucibles 31 and 32 (the refractive index of the glass), or at least one of the jenyuan roads in the measurement of 2009 2009145 photochemical and reference light An optical member (for example, a light-emitting pair) is provided for correcting the difference in optical path length. Moreover, since the incident angle of the reflection surface #^. Q Kb as the reference surface is smaller than the incident angle of the reference especially to the reflection surface 9a, the month is used as compared with the case where a plurality of light transmission slits are used. Using the plane 翏... first use the facet Han Mirror 9, which makes it easier to ensure the length required for the X-direction of the face. ,
围1之實施形態及圖7之變形例，係藉由光源i 及聚光⑽2所構成之照明裝置，將収光狀送光狹縫 S1〜S12與參照光用之送光狹縫S13〜S15整體照明。然而， 未限於此，例如，如圖13所示’使用—對照明裝置41、42, 將形成有測定光用之送光狹縫之第1圖案面43、及形成有 參照光用之送光狹縫之第2圖案面44個別照明。在此情 形，例如，能以不同波長之照明光照明測定光用之送光狹 縫與參照光用之送光狹缝，能針對測定光及參照光分別適 當選擇最佳波長。 又，圖1之實施形態及圖7之變形例，雖使用由複數 ® 個送光狹縫所構成之測定光用之送光狹縫檢測複數個檢測 點的位置，但未限於此’亦可使用由1個送光狹縫所構成 之測定光用之送光狹縫檢測1個檢測點的位置。又，圖i 之實施形態及圖7之變形例，雖參照光用之送光狹缝之狹 縫數量少於測定光用之送光狹缝測定光用之送光狹縫，但 亦可將測定光用與參照光用狹縫數量設成相同，或將參照 光用狹縫設成多於測定光用狹縫。 又，上述實施形態，雖將送光光學系統與受光光學系 25 200937145 統相對於既定之YZ平面（例如，包含光轴ΑΧ< γ 設成具有對稱之構成，但未限於對稱之 對稱之構成。 成非 又，上述實施形態，雖根據光電顯微鏡之原理（使用振 動反射鏡之測量原理）檢測被檢測面之面位置，但未線於 此，例如亦可藉由使用影像處理之檢測系統檢測測定觀測 像及參照觀測像之各位置資訊，根據所檢測之各位置資訊 算出被檢測面之面位置。 又，上述實施形態，雖說明曝光裝置具備單一面位置 ❹ 檢測裝置之例，但未限於此，亦可視需要以複數組面位置 檢測裝置將檢測視野分割《在此情形，可根據第丨面位置 檢測裝置之檢測視野與第2面位置檢測裝置之檢測視野之 共通視野，進行各面位置檢測裝置之校正。 又’上述實施形態，雖適用本發明以檢測曝光裝置之 感光性基板之面位置，但未限於此，亦可適用本發明以檢 測曝光裝置之光罩圖案面之面位置。又，上述實施形態， 雖適用本發明以檢測曝光裝置中之感光性基板之面位置， 〇 但未限於此’亦可適用本發明以檢測曝光裝置以外之各種 裝置中之一般被檢測面之面位置。又，上述實施形態，雖 對於使用投影曝光系統之曝光裝置適用本發明，但，例如 亦可適用於接近型曝光裝置等、未使用投影曝光系統之曝 光裝置。 又，上述實施形態，可取代光罩，使用根據可變圖案 形成裝置，根據既定之電子資料形成既定圖案。若使用此 26 200937145 種可變圖案形成裝置’就算將圖案面縱置，亦可對同步精 度所產生的影響降至最低限度。又，作為可變圖案形成裝 置，例如可使用根據既定之電子資料加以驅動之包含複數 個反射元件之DMD(數位微反射鏡元件）。使用DMD之曝光 裝置，例如已揭示於曰本特開2〇〇4_3〇4135耗工報、國際專 利公開第2006/080285號小冊子。又，除了 DMD般之非發 光之反射型空間光調變器以外，亦可使用透射型空間光調 變器、或使用自發光型之影像顯示元件。又，在圖案面為 〇 橫置之情形，亦可使用可變圖案形成裝置。 上述實施形態之曝光裝置，係可將包含本案專利申請 範圍所舉之各構成要件之各種副系統，以保持既定之機械 精度、電氣精度、光學精度的方式加以組裝，藉此加以製 造。為確保該等各種精度，在此組裝前後，針對各種光學 系統進行用以達成光學精度之調整、針對各種機械進行達 成機械精度之調整、#對各制氣進行達成電氣精度之調 整。各副系統對曝光裝置之組裝步驟，包含各種副系統彼 此之機械連接、電路之配線連接、氣壓迴路之配管連接等。 在此各種副系統對曝光裝置之組裝步驟前，當然亦有各副 系統之組裝步驟。當各種副系統對曝光裝置之組裝步驟結 束後，進行综合調&，以確保曝光裝置整體之各種精度。 光裳置之製造，較佳係在溫度及潔淨度受到理 潔淨室進行。 、，其次，說明使用上述實施形態之曝光裝置之元件製造 方法。圖14係表示半導體元件之製程之流程圖。如圖Η 27 200937145 所示，在半導體元件之製程中，將金屬膜蒸鍍於作為半導 艎兀件之基板之㈣w(步㉟S4G)，在此經縫之金屬膜上 塗布於乾光性材料之光阻（步驟S42)。接著，使用上述實施 形態之曝光裝置’將形成於標線片R(作為光罩）之圖案轉印 於晶圓w上之各照射區域（步驟S44:曝光步驟），進行此轉 印結束後之晶圓 W之顯影，亦即進行轉印有圖案之光阻之 顯影（步驟S46:顯影步驟）。然後，將藉由步驟S46生成於In the embodiment of the enclosure 1 and the modification of FIG. 7, the light-emitting slits S1 to S12 and the light-transmitting slits S13 to S15 for the reference light are used in the illumination device including the light source i and the condensing light (10) 2 . Overall lighting. However, the first pattern surface 43 on which the light-emitting slit for measuring light is formed and the light-transmitting light for forming the reference light are formed, for example, as shown in FIG. The second pattern surface 44 of the slit is individually illuminated. In this case, for example, the light-transmitting slit for the measurement light and the light-transmitting slit for the reference light can be illuminated with illumination light of different wavelengths, and the optimum wavelength can be appropriately selected for the measurement light and the reference light, respectively. Further, in the embodiment of FIG. 1 and the modification of FIG. 7, the position of the plurality of detection points is detected using the light-transmitting slit for measuring light composed of the plurality of light-transmitting slits, but the present invention is not limited thereto. The position of one detection point is detected using a light transmission slit for measuring light composed of one light transmission slit. Further, in the embodiment of Fig. i and the modification of Fig. 7, the number of slits for the light-transmitting slit for light is smaller than the light-transmitting slit for the light-sink slit measurement light for measuring light, but it may be The measurement light is set to be the same as the reference light slit, or the reference light slit is set to be larger than the measurement light slit. Further, in the above-described embodiment, the light-transmitting optical system and the light-receiving optical system 25 200937145 are configured to have a symmetrical configuration with respect to a predetermined YZ plane (for example, including the optical axis ΑΧ < γ), but is not limited to the symmetrical symmetry. In addition, in the above embodiment, the position of the surface of the detected surface is detected according to the principle of the photoelectric microscope (using the measuring principle of the vibrating mirror), but it is not in this case, for example, it can be detected by a detection system using image processing. The position information of the observation image and the reference observation image is calculated based on the detected position information. Further, in the above embodiment, the exposure apparatus includes an example of the single surface position detection device, but the invention is not limited thereto. The detection field of view may be divided by the complex array surface position detecting device as needed. In this case, the position detection of each surface may be performed according to the common field of view of the detection field of view of the second surface position detecting device and the detection field of the second surface position detecting device. Correction of the device. In the above embodiment, the present invention is applied to detect the photosensitivity of the exposure device. The position of the surface of the plate is not limited thereto, and the present invention can also be applied to detect the position of the surface of the mask pattern surface of the exposure device. Further, in the above embodiment, the present invention is applied to detect the position of the photosensitive substrate in the exposure device. However, the present invention is also applicable to detecting the surface position of a general detected surface in various devices other than the exposure device. Further, in the above embodiment, the present invention is applied to an exposure device using a projection exposure system, but For example, it can be applied to an exposure apparatus that does not use a projection exposure system, such as a proximity exposure apparatus, etc. Further, in the above-described embodiment, a predetermined pattern can be formed based on a predetermined electronic material in accordance with a variable pattern forming apparatus instead of a photomask. By using the 26 200937145 variable pattern forming device', even if the pattern surface is vertically placed, the influence on the synchronization accuracy can be minimized. Further, as the variable pattern forming device, for example, it can be used according to a predetermined electronic material. Driving a DMD (Digital Micromirror Element) comprising a plurality of reflective elements. Exposure using DMD For example, it has been disclosed in 曰本特开2〇〇4_3〇4135, and International Patent Publication No. 2006/080285. In addition, it can be used in addition to DMD-like non-luminous reflective spatial light modulators. A transmissive spatial light modulator or a self-luminous type image display element may be used. Alternatively, a variable pattern forming device may be used in the case where the pattern surface is tantalum. The exposure apparatus of the above embodiment may include Various sub-systems of the various constituent elements of the scope of the patent application are assembled by means of maintaining the predetermined mechanical precision, electrical precision, and optical precision. To ensure these various precisions, before and after the assembly, Various optical systems are used to achieve optical precision adjustment, to achieve mechanical precision adjustment for various machines, and to achieve electrical accuracy adjustment for each gas. The assembly procedure of each sub-system to the exposure apparatus includes mechanical connection of various sub-systems, wiring connection of circuits, piping connection of pneumatic circuits, and the like. Before the various sub-systems are assembled to the exposure apparatus, of course, there are also assembly steps of the respective subsystems. After the various sub-systems complete the assembly steps of the exposure apparatus, a comprehensive adjustment is performed to ensure various precisions of the entire exposure apparatus. The manufacture of the glaze is preferably carried out in a clean room by temperature and cleanliness. Next, a method of manufacturing an element using the exposure apparatus of the above embodiment will be described. Fig. 14 is a flow chart showing the process of the semiconductor device. As shown in FIG. 27 200937145, in the process of semiconductor device, a metal film is deposited on (a) w (step 35S4G) as a substrate of a semi-conductive device, and the metal film is coated on the dried light material. Light resistance (step S42). Next, the pattern formed on the reticle R (as a mask) is transferred onto each of the irradiation areas on the wafer w by using the exposure apparatus of the above-described embodiment (step S44: exposure step), and after the transfer is completed, Development of the wafer W, that is, development of the photoresist to which the pattern is transferred (step S46: development step). Then, it will be generated by step S46.
晶圓W表面之光阻圖案作為加工用遮罩，對晶圓〜表面進 行钱刻等加工（步驟S48:加工步驟）。 在此，光阻圖案，係指與藉由上述實施形態之曝光裝 置轉印之圖案對應之生成有凹凸形狀之光阻層（轉印層八其 凹部貫通光阻層者。在步驟S48，係透過光阻圖案進行晶圓 W表面之加工。在㈣S48所進行之加卫，包含例如晶圓 W表面之蝕刻或金屬膜等之成膜之至少一者。又，在步驟 S44’上述實施形態之曝光裝置，係將塗布有光阻之晶圓w 作為感光性基板以進行圖案之轉印。The photoresist pattern on the surface of the wafer W is processed as a mask for processing, and the wafer to the surface is subjected to processing such as etching (step S48: processing step). Here, the photoresist pattern refers to a photoresist layer in which a concave-convex shape is formed corresponding to the pattern transferred by the exposure apparatus of the above-described embodiment (the transfer layer has a concave portion penetrating the photoresist layer. In step S48, The surface of the wafer W is processed through the photoresist pattern. The curing performed by (4) S48 includes, for example, at least one of etching of the surface of the wafer W or film formation of a metal film, etc. Further, in the above embodiment, in step S44' In the exposure apparatus, the wafer w to which the photoresist is applied is used as a photosensitive substrate to perform pattern transfer.
圖15係表示液晶顯示元件等液晶元件之製程之流程 圖。如圖15所示，液晶元件之製程中，依序進行圖案形成 步驟（步驟S50)、濾色片形成步驟（步驟S52)、元件組裝步 驟（步驟S54)及模組级裝步驟（步驟s56)。 在步驟S50之圖案形成步驟，於塗布有光阻之玻璃基 板（作為感光性基板）上，使用上述實施形態之曝光裝置，形 成電路圖案及電極圖案等既定圖案。在該圖案形成步驟包 含：曝光步驟，使用上述實施形態之曝光裝置，將圖案轉 28 200937145 印於光阻層；顯影步驟，進行轉印有圖案之感光性基板的 顯影，亦即進行玻璃基板上之光阻層的顯影，生成對應於 圖案的形狀之光阻層（轉印層）；及加工步驟，透過此經顯影 之光阻層，對玻璃基板表面進行加工。 在步驟S52之濾色片形成步驟形成濾色片，該濾色片 係將對應於R(紅）、G(綠）、B(藍）之3個點組多數排列成矩 陣狀而成，或將R、G、B之3根線條之濾色片組複數排列 於水平掃描方向而成。 © 在步驟S54之元件組裝步驟，使用藉由步驟S50形成 既定圖案之玻璃基板、與藉由步驟S52形成之濾色片，組 裝液晶面板（液晶單元）。具體言之’例如藉由將液晶注入玻 璃基板與濾色片之間以形成液晶面板。在步驟S56之模組 組裝步驟’於藉由步驟S54組裝而成之液晶面板，安裝用 以進行該液晶面板的顯示動作之電路及背光等各種零件。 又’本發明，未限於適用半導體元件或液晶元件製造 用之曝光裝置，例如，亦可廣泛適用於電漿顯示器等顯示 裝置用之曝光裝置，或用以製造攝影元件（CCD等）、微機 器、薄膜磁頭、及DNA晶片等各種元件之曝光裝置。此外， 本發明，亦可適用於利用微影步驟，以製造形成有各種元 件之光罩圖案之光罩（標線片等）時之曝光步驟（曝光裝置 【圖式簡單說明】 圖1係表示本發明之實施形態之具備面位置檢測裝置 之曝光裝置的構成之概略圖。 29 200937145 圖2係表示設於一對送光稜鏡的射出面之送光狹缝圖。 圖3係表示一對落射棱鏡間之光路圖。 圖4表示設於一對受光稜鏡的入射面之受光狹缝圖。 圖5係表示從送光稜鏡至受光稜鏡之光路直線狀展開 之構成圖。 圖6係表示設於光檢測器的檢測面之複數個受光部。 圖7係表示具備具有共通圖案面之送光圖案構件與具 有共通觀測面之觀測構件的變形例之構成圖。 圖8係表示圖7之變形例之從送光稜鏡至受光棱鏡之 ◎ 光路直線狀展開之構成圖。 圖9係表示使用平行平面板作為面位置校正構件之例。 圖1 〇係表示使用偏角稜鏡作為面位置校正構件之例。 圖11係表示使用3次反射型稜鏡作為參照構件之例。 圖12係表示使用i次反射型棱鏡作為參照構件之例。 圖13係表示個別照明形成有測定用光送光狹縫之第i 圖案面與形成有參照用光送光狹縫之第2圖案面之例。 圖14係表示半導體元件之製程之流程圖。 ❹ 圖15係表示液晶元件之製程之流程圖。 圖16係表示使用3次反射型棱鏡作為參照構件之另一 例〇 【主要元件符號說明】 1 光源 2 聚光透鏡 30 200937145 3、4 5 、 7 、 15 、 17 6 11 12 13、14Fig. 15 is a flow chart showing the process of a liquid crystal element such as a liquid crystal display element. As shown in FIG. 15, in the process of the liquid crystal element, the pattern forming step (step S50), the color filter forming step (step S52), the component assembling step (step S54), and the module level loading step (step s56) are sequentially performed. . In the pattern forming step of the step S50, a predetermined pattern such as a circuit pattern and an electrode pattern is formed on the glass substrate (as a photosensitive substrate) to which the photoresist is applied by using the exposure apparatus of the above embodiment. The pattern forming step includes an exposure step of printing a pattern on the photoresist layer using the exposure apparatus of the above embodiment, and a development step of developing the photosensitive substrate on which the pattern is transferred, that is, on the glass substrate. The photoresist layer is developed to form a photoresist layer (transfer layer) corresponding to the shape of the pattern; and a processing step is performed to process the surface of the glass substrate through the developed photoresist layer. Forming a color filter in the color filter forming step of step S52, wherein the color filter is formed by arranging a plurality of three dot groups corresponding to R (red), G (green), and B (blue) in a matrix, or The color filter groups of the three lines of R, G, and B are arranged in a plurality of horizontal scanning directions. © In the component assembly step of step S54, a liquid crystal panel (liquid crystal cell) is assembled using a glass substrate having a predetermined pattern formed in step S50 and a color filter formed in step S52. Specifically, for example, a liquid crystal panel is formed by injecting liquid crystal between a glass substrate and a color filter. In the module assembly step of step S56, various components such as a circuit for performing display operation of the liquid crystal panel and a backlight are mounted on the liquid crystal panel assembled in step S54. Further, the present invention is not limited to an exposure apparatus for manufacturing a semiconductor element or a liquid crystal element, and can be widely applied to, for example, an exposure apparatus for a display device such as a plasma display, or a photographic element (CCD or the like) or a micromachine. Exposure devices for various components such as thin film magnetic heads and DNA wafers. Further, the present invention can also be applied to an exposure step when a photomask (a reticle or the like) in which a mask pattern of various elements is formed by using a lithography step (exposure device [schematic description of the drawing] FIG. 1 is a view showing A schematic view of a configuration of an exposure apparatus including a surface position detecting device according to an embodiment of the present invention. 29 200937145 Fig. 2 is a view showing a light transmission slit provided on an emission surface of a pair of light guides. Fig. 4 is a view showing a light receiving slit of an incident surface of a pair of receiving pupils. Fig. 5 is a view showing a configuration of linearly expanding an optical path from a light emitting aperture to a light receiving aperture. A plurality of light receiving portions provided on the detecting surface of the photodetector are shown in Fig. 7. Fig. 7 is a view showing a configuration of a modified example in which a light transmitting pattern member having a common pattern surface and an observation member having a common observation surface are provided. Fig. 9 is a view showing a configuration in which a parallel plane plate is used as a surface position correcting member from a light-emitting ray to a light-receiving prism. Fig. 9 shows an example in which a yaw angle is used as a surface position correcting member. An example of the surface position correcting member is shown in Fig. 11. Fig. 11 shows an example in which a third-order reflection type 稜鏡 is used as a reference member. Fig. 12 shows an example in which an i-th reflection type prism is used as a reference member. An example of the i-th pattern surface of the light-transmitting slit and the second pattern surface on which the reference light-transmitting slit is formed. Fig. 14 is a flow chart showing the process of the semiconductor element. Fig. 15 shows the process of the liquid crystal element. Fig. 16 is a view showing another example of using a three-time reflection type prism as a reference member. [Main element symbol description] 1 Light source 2 Condenser lens 30 200937145 3, 4 5 , 7 , 15 , 17 6 11 12 13 , 14
PR G CR R RS PL W WS 送光稜鏡 物鏡 振動反射鏡 落射棱鏡 光檢測器 中繼透鏡 受光棱鏡 訊號處理部 控制部 標線片 標線片載台 投影光學系統 晶圓 晶圓載台PR G CR R RS PL W WS 送 Objective lens Vibrating mirror Epitaxial prism Photodetector Relay lens Light receiving prism Signal processing unit Control unit Marking line Marking line stage Projection optical system Wafer Wafer stage
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