JP2007329384A - Surface position detection device, exposure equipment, and method for manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface position detection device which can detect correctly the surface position of a detection target surface. <P>SOLUTION: The surface position detection device 2 detects the surface position of the detection target surface W. The device comprises a light-transmitting optical system SL which projects a plurality of first slits to a plurality of measurement points on the detection target surface W, by transmitting a detecting light supplied from a light source to the detection target surface W from an oblique direction; a light-receiving optical system RL which forms a plurality of first slit images on a plurality of second slits provided corresponding to the plurality of the first slits, by condensing the detected light reflected by the detection target surface W; and a plurality of detecting means which detects the each of detected lights through the each of the plurality of the second slits. The each of the plurality of the detecting means is equipped with a plurality of sensors arranged in line in the direction crossing the short direction of second slits. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a surface position detection apparatus used in a lithography process for manufacturing a semiconductor element, a liquid crystal display element, etc., an exposure apparatus provided with the surface position detection apparatus, and a device manufacturing method using the exposure apparatus. is there.

In a projection exposure apparatus that projects and exposes a pattern formed on a mask onto a substrate via a projection optical system, the projection optical system has a relatively shallow depth of focus, and the substrate surface may not be flat. It is necessary to accurately adjust the focus position with respect to the projection optical system in the exposure region on the substrate without lowering the image quality. As a substrate position detection device in the optical axis direction of the projection optical system, for example, the detection light is transmitted from an oblique direction to the substrate as the test surface, and an intermediate image of the light transmission slit is projected on the substrate, An oblique-incidence autofocus sensor (surface position detection device) that collects the detection light reflected by the substrate surface, forms an image of the light transmission slit on the light receiving slit, and detects the detection light that has passed through the light receiving slit. It is known (see, for example, Patent Document 1).
JP-A-5-129182

  In the above-described oblique incidence type autofocus sensor, the size of the light transmission slit is finite. Therefore, if a rotation error remains between the light transmission slit and the light reception slit, it is caused by the state and structure of the substrate surface. As a result, a measurement error occurs, and the focus position of the substrate with respect to the projection optical system cannot be accurately measured.

  An object of the present invention is to provide a surface position detecting device capable of accurately detecting a surface position of a surface to be measured, an exposure apparatus provided with the surface position detecting device, and a device manufacturing method using the exposure device. It is.

  In the surface position detection device (2) for detecting the surface position of the test surface (W), the surface position detection device of the present invention is configured to detect the detection light supplied from the light source on the test surface (W) from an oblique direction. A light transmission optical system (SL) that transmits light and projects a plurality of first slits (S1 to S25) to each of a plurality of measurement points on the test surface (W), and the test surface (W) The detection light reflected by the plurality of first slits (R1 to R25) provided on the plurality of second slits (R1 to R25) corresponding to the plurality of first slits (S1 to S25) is collected. A plurality of detection means (RS1 to RS25) for detecting each of the detection light through each of the light receiving optical system (RL) that forms the image of S1 to S25) and the plurality of second slits (R1 to R25). Each of the plurality of detection means (RS1 to RS25) , Characterized in that it comprises a sensor (C1 -C4) a plurality of which are arranged side by side in a direction transverse to the lateral direction of the second slit (R1~R25).

  The exposure apparatus of the present invention is an exposure apparatus that exposes a predetermined pattern on a photosensitive substrate (W), and is a surface position detection apparatus of the present invention for detecting the surface position of the photosensitive substrate (W). 2).

  Further, in the device manufacturing method of the present invention, an exposure process (S303) in which a predetermined pattern is exposed on the photosensitive substrate (W) using the exposure apparatus of the present invention, and the exposure process (S303) is performed. And a developing step (S304) for developing the photosensitive substrate (W).

  According to the surface position detection apparatus of the present invention, the plurality of detection means provided corresponding to the plurality of second slits are arranged in a line across the short direction of the second slit. And the adjusting means for adjusting the light receiving timing for each of the plurality of sensors, the surface position of the test surface can be adjusted even when a rotation error remains between the first slit and the second slit. Accurate measurement is possible.

  Further, according to the exposure apparatus of the present invention, since the surface position detection device of the present invention is provided, the surface position of the photosensitive substrate can be accurately detected. Therefore, the surface position of the photosensitive substrate can be accurately adjusted, and highly accurate exposure can be performed.

  Further, according to the device manufacturing method of the present invention, since the exposure is performed using the exposure apparatus provided with the surface position detecting device of the present invention, the surface position of the photosensitive substrate can be accurately detected, The surface position of the substrate can be adjusted accurately. Therefore, highly accurate exposure can be performed and a good device can be obtained.

  A projection exposure apparatus according to an embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a schematic configuration of a projection exposure apparatus according to an embodiment of the present invention. In the following description, the XYZ orthogonal coordinate system shown in FIG. 1 is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. The XYZ orthogonal coordinate system is set so that the X axis and the Y axis are parallel to the wafer W, and the Z axis is set in a direction orthogonal to the wafer W. In the XYZ coordinate system in the figure, the XY plane is actually set to a plane parallel to the horizontal plane, and the Z-axis is set vertically upward.

  As shown in FIG. 1, the exposure light emitted from the illumination optical system IL including the light source illuminates the reticle R placed on the reticle stage RST. The position of reticle stage RST is measured and controlled by a reticle stage interferometer (not shown). The exposure light that has passed through the exposure pattern formed on the reticle R projects a pattern image of the reticle R onto the wafer W placed on the wafer table WT via the wafer holder WH via the projection optical system PL. To do. Wafer table WT is placed on Z stage ZS, X stage XS, and Y stage YS as wafer stages. The Z stage ZS is configured to be movable in the focusing direction (Z direction) along the optical axis of the projection optical system PL, and the X stage XS and the Y stage YS allow the wafer W to be perpendicular to the optical axis of the projection optical system PL. It is configured to be capable of parallel movement and minute rotation within a plane (XY plane). The position of the wafer stage is measured and controlled by a wafer stage interferometer (not shown).

  This projection exposure apparatus includes a surface position detection apparatus 2. The surface position detection device 2 is configured to position the wafer W in the optical axis direction (Z direction) of the projection optical system PL so that the exposure area of the wafer W falls within the depth of focus with respect to the imaging plane by the projection optical system PL. Is detected.

  As shown in FIG. 1, the surface position detection device 2 includes a light transmission optical system SL and a light reception optical system RL. The light transmission optical system SL transmits detection light supplied from a light source (not shown) from an oblique direction onto a wafer W that is a surface to be detected, and a plurality of light transmissions described later on each of a plurality of measurement points on the wafer W. The slits (first slits) S1 to S25 are projected. The light receiving optical system RL collects the detection light reflected by the wafer W and forms images of light transmitting slits S1 to S25 on light receiving slits (second slits) R1 to R25 described later.

  Detection light emitted from a light source (not shown) that supplies detection light to the light transmission optical system SL enters an incident end (not shown) of the light guide fiber 10 via a collimator lens or the like (not shown). To do. As shown in FIG. 1, the detection light propagated through the light guide fiber 10 exits from the exit end 10 a of the light guide fiber 10, passes through the condenser lens 11, and enters the light transmission slit prism 12.

  FIG. 2 is a diagram illustrating the configuration of the exit surface 12 a of the light transmission slit prism 12. The exit surface 12 a of the light-sending slit prism 12 is disposed at a position optically conjugate with the wafer W. Further, as shown in FIG. 2, a plurality of light transmission slits S1 to S25 are arranged on the exit surface 12a. The detection light that has passed through the plurality of light transmission slits S <b> 1 to S <b> 25 on the exit surface 12 a is reflected by the bending mirror 16, passes through the second objective lens 17, and is reflected by the bending mirror 18. The detection light reflected by the bending mirror 18 is reflected by the oscillating mirror 21 disposed so as to be positioned substantially on the focal plane of the first objective lens 23 described later. The oscillating mirror 21 is configured to be able to vibrate in the direction of the arrow in the figure, and relatively receives light receiving slits R1 to R25 described later and images of light transmitting slits S1 to S25 formed on the light receiving slits R1 to R25. Let it scan.

  The detection light reflected by the oscillating mirror 21 passes through the first objective lens 23 and enters a square prism-shaped rhomboid prism 24 having a rhombic cross section. The detection light transmitted through the entrance surface of the rhomboid prism 24 is sequentially reflected by a pair of reflection surfaces parallel to each other, and exits from an exit surface parallel to the entrance surface. The detection light that has passed through the light transmission optical system SL by passing through the rhombus prism 24 is incident on the wafer W from an oblique direction.

  FIG. 3 shows images T1 to S25 of the light transmission slits S1 to S25 formed by irradiating each of the plurality of measurement points on the wafer W with the detection light that has passed through the plurality of light transmission slits S1 to S25 on the exit surface 12a. It is a figure which shows T25. In addition, the area | region A shown with the broken-line part in a figure is an exposure area | region.

  The detection light reflected by the wafer W enters the rhomboid prism 25 that constitutes the light receiving optical system RL. The rhomboid prism 25 is a quadrangular prism having a rhombic cross section, similar to the rhombus prism 24. Therefore, the detection light that has passed through the incident surface of the rhomboid prism 25 is sequentially reflected by a pair of reflecting surfaces parallel to each other, and then passes through an exit surface parallel to the incident surface and exits from the rhombus prism 25.

  The detection light emitted from the rhombus prism 25 passes through the first objective lens 26 and the second objective lens 31, is reflected by the bending mirror 33, and enters the light receiving slit prism 35. FIG. 4 is a diagram illustrating the configuration of the incident surface 35 a of the light receiving slit prism 35. The incident surface 35a of the light receiving slit prism 35 is disposed at a position optically conjugate with the wafer W. Further, as shown in FIG. 4, light receiving slits R1 to R25 corresponding to the plurality of light transmitting slits S1 to S25 formed on the exit surface 12a of the light transmitting slit prism 12 are arranged on the incident surface 35a. . On the light receiving slits R1 to R25, images of the corresponding light transmitting slits S1 to S25 are formed. Further, in order to suppress the variation in the amount of light between the light transmitting slits S1 to S25, the length of the light receiving slits R1 to R25 in the longitudinal direction is set shorter than the length of the light transmitting slits S1 to S25 in the longitudinal direction.

  The detection light that has passed through the light receiving slit prism 35 passes through the light receiving optical system RL by passing through the relay lenses 36a and 36b, and enters the detection unit 38. The detection unit 38 photoelectrically converts detection light via the light receiving slits R1 to R25. FIG. 5 is a diagram illustrating a configuration of the detection unit 38. As shown in FIG. 5, light receiving sensors RS <b> 1 to RS <b> 25 are arranged on the light receiving surface of the detection unit 38 corresponding to the light receiving slits R <b> 1 to R <b> 25, respectively.

  FIG. 6 is a diagram illustrating a configuration of the light receiving sensor RS1. The configuration of the light receiving sensors RS2 to RS25 is the same as that of the light receiving sensor RS1. As shown in FIG. 6, the light receiving sensor RS1 includes a plurality (four in this embodiment) of sensors C1 to C4, and the sensors C1 to C4 are arranged side by side in the longitudinal direction of the light receiving slit R1. . Each of the sensors C1 to C4 has a light reception timing adjusted based on the rotation amount between the light transmission slit S1 and the light reception slit R1, and outputs a detection signal for one measurement point on the wafer W surface. The plurality of sensors included in each of the light receiving sensors RS2 to RS25 has the light receiving timing adjusted based on the amount of rotation between the light transmitting slits S2 to S25 and the light receiving slits R2 to R25, and is on the wafer W surface. A detection signal for one corresponding measurement point is output.

  The detection unit 38 outputs a measurement result for one measurement point to a control unit (not illustrated) based on outputs from four sensors (for example, C1 to C4 in RS1) corresponding to one measurement point. The detection signal intensity from each sensor changes as the vibration mirror 21 vibrates, and the control unit passes through each of the light receiving slits R1 to R25 with reference to the phase of the AC signal having the same phase as the vibration cycle of the vibration mirror 21. Synchronous detection of the detection signal intensity of the detection light is performed. The control unit calculates a correction amount in the Z direction of the Z stage ZS based on the result of the synchronous detection, and drives the Z stage ZS to be at the best focus position based on the calculation result.

  In the conventional surface position detection apparatus, the amount of detection light passing through the light transmission slit and the light receiving slit is detected. The positional relationship between the image of the light transmission slit S and the light receiving slit R in the conventional surface position detection device (when the positional deviation of the wafer W in the Z direction is −Z, −Z / 2, 0, + Z / 2, + Z) is shown. 7 shows. With the center of the position of the image of the light transmission slit S with respect to the light receiving slit R shown in FIG. 7, the image of the light transmission slit S vibrates in the direction of the arrow in the figure along with the vibration of the vibration mirror.

  FIG. 8 is a graph showing a change in the amount of detection light accompanying the vibration of the vibrating mirror when each of the positional deviations −Z, −Z / 2, 0, + Z / 2, and + Z occurs. FIG. 9 shows changes in the signal voltage when the positional deviation in the Z direction of the wafer W is plotted on the horizontal axis and the difference I between the light quantity I1 at the detection point P1 and the light quantity I2 at the detection point P2 shown in FIG. It is a graph. Here, when a rotation error remains between the light transmitting slit S and the light receiving slit R, the waveform shown in FIG. 8 changes, and the light quantity distribution increases as shown in the graph of FIG. Becomes thicker. Further, the graph shown in FIG. 9 also changes, and the width of the signal voltage becomes large and the line of the graph becomes thick as in the graph shown in FIG.

  Problems in such a state will be described below. As shown in FIG. 12, it is assumed that a wafer W0 on which a bright part (high reflectance) 40 and a dark part (low reflectance) 42 are formed is measured. At this time, for example, as shown in FIG. 13, when the image T1 of the light transmission slit S1 (images T2 to T25 of the light transmission slits S2 to S25) is formed at the boundary between the bright part 40 and the dark part 42, FIG. As shown in FIG. 3, when the light T is installed at a position where the image T1 of the light transmission slit S1 (images T2 to T25 of the light transmission slits S2 to S25) is formed at the boundary between the bright part 40 and the dark part 42, It is assumed that the position of the dark part 42 is formed so as to be reversed with respect to the case shown in FIG. In this case, if the rotation error described above remains, as shown in FIG. 15, the signal is shifted at the measurement positions shown in FIGS. 13 and 14 due to the influence of the light and dark portions 40 and 42 (B and C). ). Therefore, the conventional surface position detection apparatus has a problem that a measurement error occurs and the position of the wafer W in the Z direction cannot be measured accurately.

  In the surface position detection apparatus according to this embodiment, the light reception timings of the plurality of sensors (C1 to C4) included in each of the light reception sensors RS1 to RS25 are adjusted, and the plurality of sensors (C1 to C4) are adjusted. Detection light is detected at the light reception timing. FIG. 16 is a flowchart for explaining a method of adjusting the light reception timing of the sensors C1 to C4. In addition, the adjustment method of the light reception timing of several sensors with which each of other light reception sensors RS2-RS25 is provided is the same as the adjustment method of the light reception timing of sensors C1-C4.

  First, a reference wafer (for example, a silicon wafer having no resist) having a constant reflectivity with a reference surface accuracy is set on the wafer holder WH (step S10).

  Next, the detection light is detected by the surface position detecting device 2 using the reference wafer set in step S10 (step S11). The detection value 1 can be obtained as the detection result by the sensor C1 provided in the light receiving sensor RS1, and the detection value 2 can be obtained as the detection result by the sensor C4 provided in the light receiving sensor RS1.

  Next, a primary coefficient for obtaining a focus offset value, which will be described later, is calculated (step S12). For example, the relative positional relationship between the light transmitting slit S1 and the light receiving slit R1 (when the positional deviation of the wafer W in the Z direction is −Z, −Z / 2, 0, + Z / 2, + Z) is as shown in FIG. A case where the light transmission slit S1 is rotating clockwise with respect to the light receiving slit R1 will be described. When the image of the light transmission slit S1 formed on the light receiving slit R1 vibrates in the short direction of the light receiving slit R1 with the vibration of the vibration mirror 21, a measurement error occurs due to a rotation error in the detection value 1, The graph shown in FIG. 15B is obtained instead of the graph shown in FIG. When the rotation error between the light receiving slit R1 and the light transmitting slit S1 becomes large, the graph shown in FIG. 15B moves in the −Z direction. Further, in the detected value 2, a measurement error occurs due to a rotation error, and the graph shown in FIG. 15C is obtained instead of the graph shown in FIG. When the rotation error between the light receiving slit R1 and the light transmitting slit S1 increases, the graph shown in FIG. 15C moves in the + Z direction.

  Here, the measurement error amount of the position of the wafer W in the Z direction shown in FIG. 15B is Z1, the measurement error amount of the position of the wafer W in the Z direction shown in FIG. 15C is Z2, and the longitudinal direction of the light receiving slit R1. When the length is L, the primary coefficient K corresponding to the rotation amount is (Z1−Z2) / (L / 2). When the light transmitting slit S1 rotates counterclockwise with respect to the light receiving slit R1, the detection value 1 is a graph shown in FIG. 15C, and the detection value 2 is shown in FIG. 15B. It becomes a graph.

  Next, the focus offset amount with respect to the arrangement direction of the sensors C1 to C4 is calculated based on the primary coefficient calculated in step S12 (step S13). As shown in FIG. 18, the focus offset amount is a product of the distances a1 to a4 from the center of the light receiving slit R1 to the centers of the sensors C1 to C4 and the primary coefficient K. That is, the focus offset amount f1 of the sensor C1 is a1 × K, the focus offset amount f2 of the sensor C2 is a2 × K, the focus offset amount f3 of the sensor C3 is a3 × K, and the focus offset amount f4 of the sensor C4 is a4 × K. Become.

  Next, the light reception timings of the sensors C1 to C4 are adjusted based on the focus offset amounts f1 to f4 of the sensors C1 to C4 calculated in step S13 (step S14). For example, as shown in FIG. 17, when the light transmission slit S1 rotates clockwise with respect to the light reception slit R1, the phase of the detection light detected by the sensor C1 is advanced, so that the light reception timing is adjusted to be advanced. Further, since the phase of the detection light detected by the sensor C4 is delayed, adjustment is performed to delay the light reception timing. The sensor C2 is adjusted to advance the light reception timing by a small amount, and the sensor C3 is adjusted to delay the light reception timing by a small amount.

  Next, detection light is detected using the sensors C1 to C4 adjusted in step S14, and it is confirmed that the measurement error due to the rotation error between the light receiving slit R1 and the light transmitting slit S1 is corrected. If the measurement error is not corrected, the operations in steps S10 to S14 are repeated, and the light reception timings of the sensors C1 to C4 are readjusted.

  Next, another method for adjusting the light reception timing of the sensors C1 to C4 will be described. In addition, the other adjustment method of the light reception timing of the some sensor with which each of other light reception sensors RS2-RS25 is provided is the same as the other adjustment method of the light reception timing of sensors C1-C4.

  In the surface position detection apparatus 2 according to this embodiment, when detection light is detected without adjusting the light receiving timing of each of the sensors C1 to C4, the positional deviation of the wafer W -Z, -Z / 2, The change in the amount of detection light accompanying the vibration of the vibrating mirror 21 when 0, + Z / 2, and + Z occur is as shown in the graph of FIG. The change in the signal voltage when the positional deviation in the Z direction of the wafer W is plotted on the horizontal axis and the difference I between the light quantity I1 at the detection point P1 and the light quantity I2 at the detection point P2 shown in FIG. It becomes like the graph shown in. That is, due to the rotation error between the light receiving slit R1 and the light transmitting slit S1, the width of the signal voltage becomes large as shown in FIG. 10 so that the graph line becomes thick and the light quantity distribution becomes large as shown in FIG. Therefore, the graph line becomes thick.

  Here, the light reception timing of each of the sensors C1 to C4 having the narrowest light amount distribution is detected while adjusting the light reception timing of each of the sensors C1 to C4. That is, by changing the phase of the detection light detected by each sensor C1 to C4, the zero point of the synchronous detection of each sensor C1 to C4 is changed, the light quantity distribution becomes the smallest, and the line of the graph shown in FIG. Detect the thinning part. And the light reception timing of the sensors C1-C4 in which the light quantity distribution becomes the smallest and the line of the graph shown in FIG. 11 becomes thin is set. Next, detection light is detected using the sensors C1 to C4 in which the light reception timing is set, and it is confirmed that the measurement error due to the rotation error between the light reception slit R1 and the light transmission slit S1 is corrected. If the measurement error is not corrected, the light reception timing of each of the sensors C1 to C4 is reset.

  According to the surface position detection device 2 according to this embodiment, the plurality of light receiving elements RS1 to RS25 provided corresponding to the plurality of light receiving slits R1 to R25 are short-side directions of the light receiving slits R1 to R25, respectively. Since the plurality of sensors (C1 to C4) arranged side by side in the direction crossing each other and the light reception timing for each of the plurality of sensors (C1 to C4) can be adjusted, the light transmission slits S1 to S25 and the light reception slit Even when a rotation error remains between R1 and R25, the surface position of the wafer W surface as the test surface can be accurately measured. Further, according to the projection exposure apparatus according to the embodiment, since the surface position detection apparatus 2 is provided, the position of the wafer W in the Z direction can be accurately adjusted, and high-precision exposure can be performed. .

  Usually, the amount of rotation error between the light transmitting slits S1 to S25 and the light receiving slits R1 to R25 is the same, but the rotation error of each slit may be different. Even in this case, since the light reception timings of the plurality of sensors included in the light reception sensor corresponding to each slit can be individually adjusted, the measurement error can be corrected with high accuracy. In this embodiment, the plurality of sensors (C1 to C4) included in the light receiving elements R1 to R25 are arranged side by side in the longitudinal direction of the light receiving slits R1 to R25. What is necessary is just to arrange | position along with the direction which crosses a direction.

  In the projection exposure apparatus according to the above-described embodiment, a micropattern (exposure process) is performed by exposing a transfer pattern formed by a reticle (mask) on a photosensitive substrate (plate) using a projection optical system (exposure process). Semiconductor elements, imaging elements, liquid crystal display elements, thin film magnetic heads, etc.) can be manufactured. FIG. 19 shows an example of a technique for obtaining a semiconductor device as a micro device by forming a predetermined circuit pattern on a plate as a photosensitive substrate using the projection exposure apparatus according to the above-described embodiment. This will be described with reference to a flowchart.

  First, in step S301 in FIG. 19, a metal film is deposited on one lot of plates. In the next step S302, a photoresist is applied on the metal film on one lot of plates. Thereafter, in step S303, using the projection exposure apparatus according to the above-described embodiment, the focus position on the plate is adjusted by the surface position detection device provided in the projection exposure apparatus, and the mask pattern image is projected into the projection optical system. Then, exposure and transfer are sequentially performed on each shot area on the plate of the one lot. Thereafter, in step S304, the photoresist on the one lot of plates is developed, and in step S305, the resist pattern is etched on the one lot of plates to correspond to the mask pattern. A circuit pattern is formed in each shot area on each plate.

  Thereafter, an upper layer circuit pattern is formed, and the plate is cut into a plurality of devices to manufacture devices such as semiconductor elements. According to the semiconductor device manufacturing method described above, since the exposure is performed using the projection exposure apparatus according to the above-described embodiment, the exposure can be performed with high accuracy and a good semiconductor device can be obtained. In steps S301 to S305, a metal is vapor-deposited on the plate, a resist is applied on the metal film, and exposure, development and etching processes are performed. Prior to these processes, the process is performed on the plate. It is needless to say that after forming a silicon oxide film, a resist may be applied on the silicon oxide film, and steps such as exposure, development, and etching may be performed.

  In the projection exposure apparatus according to the above-described embodiment, a liquid crystal display element as a micro device can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate). . Hereinafter, an example of the technique at this time will be described with reference to the flowchart of FIG. First, in FIG. 20, in a pattern formation step S401, so-called photolithography is performed in which a mask pattern is transferred and exposed to a photosensitive substrate (such as a glass substrate coated with a resist) using the projection exposure apparatus according to the above-described embodiment. The process is executed. By this photolithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. Thereafter, the exposed substrate undergoes steps such as a developing step, an etching step, and a resist stripping step, whereby a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming step S402.

  Next, in the color filter forming step S402, a large number of groups of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix or three of R, G, and B A color filter is formed by arranging a plurality of stripe filter sets in the horizontal scanning line direction. Then, after the color filter formation step S402, a cell assembly step S403 is executed. In the cell assembly step S403, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern formation step S401, the color filter obtained in the color filter formation step S402, and the like. In the cell assembly step S403, for example, liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern formation step S401 and the color filter obtained in the color filter formation step S402, and a liquid crystal panel (liquid crystal cell ).

  Thereafter, in a module assembly step S404, components such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete a liquid crystal display element. According to the above-described method for manufacturing a liquid crystal display element, since the exposure is performed using the projection exposure apparatus according to the above-described embodiment, exposure can be performed with high accuracy and a good liquid crystal display element can be obtained. Can do.

It is a figure which shows the structure of the projection exposure apparatus concerning Embodiment. It is a figure which shows the structure of the output surface of the light transmission slit prism concerning embodiment. It is a figure which shows the image of the light transmission slit formed on the wafer surface concerning embodiment. It is a figure which shows the structure of the entrance plane of the light-receiving slit prism concerning embodiment. It is a figure which shows the structure of the detection part concerning embodiment. It is a figure which shows the structure of the light reception sensor concerning embodiment. It is a figure which shows the relative positional relationship of the conventional light transmission slit and a light-receiving slit. It is a graph which shows the light quantity change of the detection light accompanying the vibration of a vibration mirror in the conventional surface position detection apparatus. It is a graph which shows the relationship between the focus position of a wafer, and light quantity change. It is a graph which shows the light quantity change of the detection light accompanying the vibration of a vibration mirror in the surface position detection apparatus concerning embodiment. It is a figure which shows the relationship between the focus position of a wafer, and light quantity change. It is a figure which shows the structure of a wafer. It is a figure which shows the positional relationship of the image of a light transmission slit, and a wafer. It is a figure which shows the positional relationship of the image of a light transmission slit, and a wafer. It is a graph which shows the relationship between the focus position of a wafer, and light quantity change. It is a flowchart for demonstrating the adjustment method of the light reception timing of the some sensor concerning embodiment. It is a figure which shows the relative positional relationship of the light transmission slit and light reception slit in case the rotation error has arisen between the light transmission slit and the light reception slit. It is a figure for demonstrating the deviation | shift amount of a slit and each sensor. It is a flowchart which shows the manufacturing method of the semiconductor device as a microdevice concerning embodiment of this invention. It is a flowchart which shows the manufacturing method of the liquid crystal display element as a microdevice concerning embodiment of this invention.

Explanation of symbols

IL ... illumination optical system, PL ... projection optical system, R ... reticle, W ... wafer, RST ... reticle stage, WH ... wafer holder, WT ... wafer table, ZS ... Z stage, XS ... X stage, YS ... Y stage, S1 S25 ... Sending slit, R1 to R25 ... receiving slit, RS1 to RS25 ... receiving sensor, C1 to C4 ... sensor, 2 ... surface position detecting device, SL ... sending optical system, RL ... receiving optical system, 12 ... sending Optical slit prism, 16, 18, 33 ... bending mirror, 23, 26 ... first objective lens, 17, 31 ... second objective lens, 21 ... vibrating mirror, 24, 25 ... rhombus prism, 35 ... light receiving slit prism, 36a , 36b... Relay lens, 38.

Claims (6)

In the surface position detection device that detects the surface position of the surface to be tested,
A light-transmitting optical system that transmits detection light supplied from a light source in an oblique direction onto the test surface, and projects a plurality of first slits to each of a plurality of measurement points on the test surface;
Light receiving optics for condensing the detection light reflected by the test surface and forming images of the plurality of first slits on the plurality of second slits provided corresponding to the plurality of first slits. The system,
A plurality of detection means for detecting each of the detection lights through each of the plurality of second slits;
Each of the plurality of detection means includes a plurality of sensors arranged side by side in a direction crossing the short direction of the second slit.   The surface position detection apparatus according to claim 1, wherein the plurality of sensors of the detection means are arranged side by side in the longitudinal direction of the second slit.   3. The surface according to claim 1, wherein the detection unit outputs a measurement result for the one measurement point based on outputs from the plurality of sensors corresponding to one measurement point. 4. Position detection device. Adjusting means for adjusting the light receiving timing of each of the plurality of sensors;
The surface position detection device according to claim 3, wherein the plurality of sensors detect the detection light at the light reception timing adjusted by the adjustment unit. In an exposure apparatus that exposes a predetermined pattern on a photosensitive substrate,
An exposure apparatus comprising the surface position detection device according to any one of claims 1 to 4 for detecting a surface position of the photosensitive substrate. An exposure step of exposing a predetermined pattern on a photosensitive substrate using the exposure apparatus according to claim 5;
A developing step of developing the photosensitive substrate exposed by the exposing step;
A device manufacturing method comprising:

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