TW200937082A - Light-emitting diode chip module and light source module - Google Patents

Light-emitting diode chip module and light source module Download PDF

Info

Publication number
TW200937082A
TW200937082A TW97106517A TW97106517A TW200937082A TW 200937082 A TW200937082 A TW 200937082A TW 97106517 A TW97106517 A TW 97106517A TW 97106517 A TW97106517 A TW 97106517A TW 200937082 A TW200937082 A TW 200937082A
Authority
TW
Taiwan
Prior art keywords
light
diode chip
emitting diode
polygonal
emitting
Prior art date
Application number
TW97106517A
Other languages
Chinese (zh)
Other versions
TWI365330B (en
Inventor
Chung-Jen Huang
Chi-Yuan Chen
Shu-Tung Lu
Original Assignee
Teknowledge Dev Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teknowledge Dev Corp filed Critical Teknowledge Dev Corp
Priority to TW097106517A priority Critical patent/TWI365330B/en
Publication of TW200937082A publication Critical patent/TW200937082A/en
Application granted granted Critical
Publication of TWI365330B publication Critical patent/TWI365330B/en

Links

Landscapes

  • Led Device Packages (AREA)

Abstract

A light-emitting diode (LED) chip module including a LED chip and a brightness enhancement film is provided. The LED chip has a light exit surface. The brightness enhancement film is disposed on the light exit surface, and has a first surface facing the LED chip and a second surface facing away from the LED chip. The brightness enhancement film has a plurality of polygonal pyramid portions located at the first surface and/or the second surface and arranged in a polygonal array. The LED chip module provides a more convergent light beam. An light source module using a brightness enhancement film is also provided.

Description

200937082 九、發明說明: 【發明所屬之技術領域】 本發明是有關於-種晶片模組與光源模組,且特別是 有關於-種採用增亮膜之發光二極體晶片模組與光源模 組。 【先前技術】 ❹ 發光二極體(ught-emitting diode,LED)具有諸如壽 命長、體積小、高抗震性、低熱產生及低功率消耗等優點, 因此已被廣泛應用於家用及各種設備中的指示器或光源。 近年來,發光二極體已朝多色彩及高亮度發展,因此其應 用領域已擴展至大型戶外看板、交通號誌、燈及相關領域。 在未來,發光二極體甚至可能成為兼具省電及環保功能的 主要照明光源。 圖1為一種習知表面黏著型(surface mount device, SMD)發光>一極體晶片模組之剖面示意圖。請參考圖1, © 表面黏著型發光二極體晶片模組100包括一發光二極體晶 片 110、一 導線架(leadframe) 120、一模塑構件(molding element) 130 以及一透光封膠 (transparent encapsulant) 140。發光二極體晶片110配置於導線架120上。模塑構件 130包覆部分導線架120,並具有一暴露出發光二極體晶片 110之開口 132。透光封膠140填充於開口 132内,以保護 發光二極體晶片110。發光二極體晶片110適於發出一光 束Π2,而光束112會穿透配置於開口 132中的透光封膠 5 200937082 140並傳播至外界。 在習知表面黏著型發光二極體晶片模組100中,由於 開口 132的寬度會大於發光二極體晶片110的寬度,以便 容置發光二極體晶片11〇,因此光束112會具有一定程度 的發散角。若欲將表面黏著型發光二極體晶片模組1〇〇應 用於需要準直性佳的光源之場合,尚需在表面黏著型發光 二極體晶片模組1〇〇上配置聚光透鏡。 ® 【發明内容】 本發明提供一種發光二極體晶片模組,其所提供的光 束較為集中。 本發明提供一種光源模組,其能提供亮度較高的光 源。 本發明提出一種發光二極體晶片模組,其包括一發光 二極體晶片以及一增亮膜(brightness enhancement fllm, BEF)。發光—極體晶片具有一出光面。增亮膜配置於出 ❹ 光面上,並具有一面向發光二極體晶片的第一表面與一背 向發光二極體晶片的第二表面。增亮膜具有多個多角錐 部,這些多角錐部位於第一表面及/或第二表面,並呈多邊 形陣列排列。 在本發明之一實施例中,發光二極體晶片模組更包括 一螢光層(fluorescent layer),其配置於增亮膜上。此外, 發光一極體晶片模組可更包括一承載器以及一透光封膠 (encapsulant)。發光二極體晶片是配置於承載器上,而 6 200937082 透光封膠包覆發光二極體晶片與增亮膜。 ,其包括一發 。發光二極體 °增亮膜配置 本發明更提出一種發光二極體晶片模組 光二極體晶片、一螢光層以及—上述增亮膜 晶片具有一出光面。螢光層配置於出光面上 於螢光層上。 以下列出同時適用於上述兩種發光二極體 實施例。200937082 IX. Description of the Invention: [Technical Field] The present invention relates to a wafer module and a light source module, and in particular to a light-emitting diode chip module and a light source module using a brightness enhancement film group. [Prior Art] ugh Light-emitting diodes (LEDs) have advantages such as long life, small size, high shock resistance, low heat generation and low power consumption, and thus have been widely used in homes and various devices. Indicator or light source. In recent years, light-emitting diodes have developed toward multiple colors and high brightness, so their applications have expanded to large outdoor billboards, traffic signs, lights and related fields. In the future, light-emitting diodes may even become the main source of illumination for both power saving and environmental protection functions. 1 is a schematic cross-sectional view of a conventional surface mount device (SMD) luminescence > one-pole wafer module. Referring to FIG. 1, the surface-mount LED module 100 includes a light-emitting diode chip 110, a lead frame 120, a molding element 130, and a light-transmissive sealant ( Transparent encapsulant) 140. The LED wafer 110 is disposed on the lead frame 120. The molded member 130 encloses a portion of the lead frame 120 and has an opening 132 that exposes the light emitting diode wafer 110. A light-transmissive encapsulant 140 is filled in the opening 132 to protect the LED wafer 110. The LED chip 110 is adapted to emit a beam Π2, and the beam 112 penetrates the light-transmissive encapsulant 5 200937082 140 disposed in the opening 132 and propagates to the outside. In the conventional surface-adhesive LED chip assembly 100, since the width of the opening 132 is larger than the width of the LED wafer 110 to accommodate the LED wafer 11 , the beam 112 has a certain degree. The divergence angle. If the surface-adhesive LED chip module is to be used in a light source requiring good collimation, it is necessary to arrange a condensing lens on the surface-adhesive LED chip module. ® SUMMARY OF THE INVENTION The present invention provides a light emitting diode chip module that provides a relatively concentrated beam of light. The present invention provides a light source module that provides a light source of higher brightness. The invention provides a light emitting diode chip module comprising a light emitting diode chip and a brightness enhancement flm (BEF). The illuminating-polar body wafer has a light exiting surface. The brightness enhancing film is disposed on the illuminating surface and has a first surface facing the illuminating diode chip and a second surface facing away from the illuminating diode chip. The brightness enhancing film has a plurality of polygonal pyramids which are located on the first surface and/or the second surface and are arranged in a polygonal array. In an embodiment of the invention, the LED chip module further includes a fluorescent layer disposed on the brightness enhancement film. In addition, the light emitting diode chip module may further include a carrier and a light transmissive encapsulant. The light-emitting diode chip is disposed on the carrier, and the 6 200937082 light-transmissive sealant covers the light-emitting diode chip and the brightness enhancement film. , which includes one hair. Light Emitting Dipole ° Brightening Film Configuration The present invention further provides a light emitting diode chip module, a photodiode wafer, a phosphor layer, and the brightness enhancing film having a light emitting surface. The phosphor layer is disposed on the illuminating layer on the phosphor layer. The following is a list of two embodiments of the above two types of light-emitting diodes.

^發明之—實施例中,發光二極體晶片模組更包括 哭T載:Γ及一透光封膠。發光二極體晶片是配置於承載 口。m先封膠包覆發光二極體晶片、增亮膜與螢光層。 在本《明之一實施例中,這些 :為:角錐部的頂角指向發光二極體晶wi二; 面。,這些多角錐部是位於第二表 向,且第—表面發光二極體晶片的方 面及’這些多一是位於第-表 發光二極體晶片,這些f角錐部的頂角指向 指向遠離發光二極體晶片的^面的攻些多角錐部的頂角 本發明再提出—種發極r 载器、一發光二極體晶片、一 柄組’其包括一承 5二極體晶片配置於承載器上,增亮膜。發 光封膠包覆發光二極體曰 /、有弟~出光面。透 體阳片,並具有一第二出光面。增亮 7 200937082 第二出光面上,其中第二出光面是位於增亮膜與 =一^面之間。增亮膜具有-面向透光封膠的第一表面 Ί向透光封膠的第二表面,並具有多個多角錐部。這 ,夕角錐部位於第〆表面及/或第二表面,並呈多邊形陣列 排列。 本發明之-實施例中,第-出光面與第二出光 上面向同一方向。 只角 ❹Inventive--In the embodiment, the LED chip module further comprises a crying T carrier: a crucible and a light transmissive encapsulant. The light emitting diode chip is disposed on the carrying port. The m is first encapsulated to cover the light-emitting diode wafer, the brightness enhancement film and the phosphor layer. In one embodiment of the present invention, these are: the apex angle of the pyramid is directed to the light-emitting diode crystal wi; The polygonal pyramids are located in the second front direction, and the first surface of the first surface light emitting diode wafer and the 'one of these are located on the first surface light emitting diode wafer, and the apex angles of the f angle tapers are directed away from the light emitting The apex angle of the polygon taper of the diode chip is further proposed by the present invention. A hair electrode r carrier, a light emitting diode chip, and a handle group include a 5 diode chip disposed on On the carrier, the film is brightened. The light-emitting sealer is coated with a light-emitting diode 曰 /, and has a younger light-emitting surface. The lens is transparent and has a second illuminating surface. Brightening 7 200937082 On the second illuminating surface, the second illuminating surface is located between the brightness enhancement film and the =1 surface. The brightness enhancing film has a first surface facing the light transmissive sealant facing the second surface of the light transmissive sealant and having a plurality of polygonal pyramids. Here, the horn pyramid is located on the second surface and/or the second surface and arranged in a polygonal array. In the embodiment of the invention, the first light-emitting surface and the second light-emitting surface face in the same direction. Only corner

在本發明之一實施例中,發光二極體晶片模組更包括 一螢光層,其配置於第一出光面上。透光封膠更包覆螢光 層,且第二出光面是位於增亮膜與螢光層之間。 在本發明之一實施例中,這些多角錐部是位於第—表 面。這些多角錐部的頂角指向透光封膠,且第二表面^ 面。 钩十 在本發明之一實施例中,這些多角錐部是位於第二表 面。這些多角錐部的頂角指向遠離透光封膠的方向,且第 表面為平面。 在本發明之一實施例中’這些多角錐部是位於第一表 面及第二表面。位於第一表面的多角錐部的頂角指向透光 封膠,而位於第二表面的多角錐部的頂角指向遠離透光封 膠的方向。. 本發明又提出一種光源模組,其包括至少一發光元 件、一導光單元以及一增亮膜。發光元件適於發出一光束。 導光單元配置於光束的傳遞路徑上,並具有一入光面與一 出光面。增亮膜配置於入光面上。來自發光元件的光束會 8 200937082 依序穿透增亮膜與入光面而進入導光單元中,並由出光面 傳遞至導光單元外。 在本發明之一實施例中,增亮膜具有一面向入光面的 第一表面與一背向入光面的第二表面。增亮膜具有多個多 角錐部,這些多角錐部位於第一表面及/或第二表面,並呈 多邊形陣列排列。這些多角錐部的頂角可指向入光面或指 向遠離入光面的方向。 在本發明之一實施例中,增亮膜具有一面向入光面的 ® 第一表面與一背向入光面的第二表面。增亮膜具有多個位 於第一表面的第一條狀凸起部,這些第一條狀凸起部沿著 一第一方向排列,且每一第一條狀凸起部沿著一與第一方 向實質上垂直的第二方向延伸。增亮膜可更具有多個位於 第二表面的第二條狀凸起部,這些第二條狀凸起部沿著一 第三方向排列,且每一第二條狀凸起部沿著一與第三方向 實質上垂直的第四方向延伸。第四方向與第二方向的夾角 大於〇度。 〇 在本發明之一實施例中,第四方向與第二方向實質上 垂直。 在本發明之一實施例中,增亮膜具有一面向入光面的 第一表面與一背向入光面的第二表面。增亮膜具有多個位 於第二表面的第二條狀凸起部,這些第二條狀凸起部沿著 一第三方向排列,且每一第二條狀凸起部沿著一與第三方 向實質上垂直的第四方向延伸。 在本發明一實施例之發光二極體晶片模組中’由於發 9 200937082 光-極體晶片所發出的光束會先經過增亮膜後再傳播至外 界,因此發光二極體晶片模組能夠提供較為集中的光束。 在本發明-實施例之光源模組中,由於發光元件所發出的 衫會紐财細後騎人導光單元,目此光源模組能 提供亮度較高的光源。 為讓本發明之上述特徵和優點能更明顯易懂,下文特 舉多個實施例,並配合所附圖式,作詳細說明如下。 【實施方式】 第一實施例 圖2A為本發明第一實施例之發光二極體晶片模組的 剖面不思圖,圖2B為圖2A中之發光二極體晶片的細部剖 面示意圖’圖2C為圖2A中之增亮膜以其第一表面朝上的 立體圖’而圖2D為圖2A中之增亮膜的下視圖。請參考圖 2A至圖2D,本實施例之發光二極體晶片模组2〇〇包括一 發光二極體晶片210、一增亮膜250以及一螢光層260。發 光二極體晶片210具有-出光面212。增亮膜,配置於 出光面212上。螢光層260配置於増亮膜25〇上。發光二 極體晶片21〇適於發出-光束2M。光束從出光面m 射出後,會依序通過增亮膜250與螢光層26〇。 在本實施例中,發光二極體晶片21〇包括一第一電極 272a、-配置於第-電極層272&上之半導體基材π、一 配置於半導體基材274上之第—半導體層—a、—配置於 第一半導體層276a上之第二半導體層鳩以及配置於第 10 200937082 二半導體層276b上之第二電極272b。第二電極272b暴露 出部分第二半導體層276b,而此部分的第二半導體層276b 之背向第一半導體層276a的表面即為出光面212。第一半 導體層276a與第二半導體層276b例如分別為P型半導體 層(p-type semiconductor layer)與 N 型半導體層(n-type semiconductor layer),或者分別為N型半導體層與P型半 導體層。第一半導體層276a與第二半導體層276b之間的 P-N接面(p-n junction)所發出的光束214會穿透第二半 導體層276b’並經由出光面212離開發光二極體晶片210。 值得注意的是,圖2B所繪示的發光二極體晶片210 為表面發光型(surface emitting type)發光二極體晶片, 其結構僅用於舉例’而非用以限制本發明。在其他未繪示 的貫施例中,發光一極體晶片亦可以是侧面發光型(edge emitting type)發光二極體晶片’而增亮膜配置於側面發光 型發光二極體晶片的出光面上。或者,發光二極體晶片亦 可以是呈其他結構的發光二極體晶片。 在本實施例中,增亮膜250具有一面向發光二極體晶 片210的第一表面256與一背向發光二極體晶片21〇的第 二表面258。此外’增亮膜25〇具有多個多角錐部251,這 些多角錐部251位於第一表面256,並呈多邊形陣列排列。 多角錐部251例如為N角錐部,其中Ng3。在本實施例 中,夕角錐部251例如為四角錐部,而這些四角錐部呈四 邊形陣列排列。再者,在本實施例中,這些多角錐部251 的頂角259指向發光二極體晶片210,亦即多角錐部251 11 200937082 是朝著發光二極體晶片210凸起。另外,第二表面258例 如為平面。 多角錐部251例如為正N角錐部,其相對頂角259之 底面的每一内角皆等於180(N_2)/N度,其中N23。在本 實施例中,N=4,因此底面的各内角皆等於90度。然而, 在其他實施例中,多角錐部亦可以是各邊長不完全相等的 N角錐部。 在本實施例中’螢光層260為一摻有螢光物質的膜 層。螢光物質例如為紀銘石權石(Yttrium Aluminum Garnet, YAG)或其他適當的螢光材質。 在本實施例中’發光一極體晶片210可配置於一承載 器220上,並電性連接至承載器220。具體而言,承載器 220例如為導線架。然而,在其他實施例中,承載器亦可 以是線路載板(circuit board)或其他適當的承載器。此外, 在本實施例中,發光二極體晶片模組200更包括一透光封 膠240 ’以包覆發光二極體晶片210與增亮膜250。 另外,在本實施例中’承載器220的一部分可選擇性 地被一模塑構件(molding member) 230所包覆。模塑構 件230具有一開口 232,以暴露出發光二極體晶片210、增 亮膜250及螢光層260,而透光封膠240是填充於開口 232 中。再者’模塑構件230例如是由不透光的材質所構成。 在本實施例中,發光二極體晶片模組200具有增亮膜 250’而發光二極體晶片21〇所發出的光束214在通過增光 膜25〇後,光束214在一第一方向dl上的發散角0丨及在 12 200937082 一與第一方向dl垂直之第二方向d2上的發散角(未繪示) 會因多角錐部251的折射作用而縮小,因此發光二極體晶 片模組200能夠提供較為集中的光束214。如此一來,光 束214的光通量密度(iumin〇us f[ux density)便可以較高, 且亦可以使發光二極體晶片模組2〇〇應用於需要較高準直 性光源的場合。 ❿ 差二施例 圖3A為本發明第二實施例之發光二極體晶片模組的 剖面示意圖’而圖3B為圖3A中之增亮膜以其第二表面朝 上的立體圖。請參考圖3A與圖3B,本實施例之發光二極 體晶片模組200a與上述發光二極體晶片模組2〇〇 (請參昭 圖2A)類似’兩者的差異如下所述。在發光二極體晶片模 組200a中,增亮膜250a之第一表面256a例如為平面。此 外’增亮膜250a的多角錐部253是位於第二表面258a。 _ 夕角錐部253例如為N角錐部,其中。多角錐部253 的頂角259指向遠離發光二極體晶片210的方向,亦即多 角錐部253是朝著遠離發光二極體晶片210的方向凸起。 在本實施例中’多角錐部253與上述多角錐部251 (如圖 2C所繪示)相似。然而,在其他實施例中,位於第二表面 的多角錐部亦可以是相似於上述位於第一表面的其他類型 之多角錐部’而位於第一表面與位於第二表面之多角錐部 的差異在於其頂角分別指向不同方向。 在發光二極體晶片模組200a中,而發光二極體晶片 13 200937082 210所發出的光束214a在通過增光膜250後,光束214a 在第一方向dl與第二方向d2上的發散角會因多角錐部 253的折射作用而縮小,因此發光二極體晶片模組200a能 夠&供較為集中的光束214a。如此一來,光束214a的光 通1您度便可以較高,且亦可以使發光二極體晶片模組 2〇〇a應用於需要較高準直性光源的場合。 圖4A為本發明第三實施例之發光二極體晶片模組的 剖面不意圖,而圖4B為圖4A中之增亮膜的立體圖。請參 考圖4A與圖4B,本實施例之發光二極體晶片模組2〇〇b 與上述發光二極體晶片模組2〇〇 (請參照圖2A)類似,兩 者的差異如下所述。在發光二極體晶片模組2〇〇b中,增亮 膜25〇b同時具有上述這些多角錐部251(請同時參照圖2c 圖4B)與上述這些多角錐部253 (請同時參照圖SR與 圖),其中多角錐部25丨是位於增亮膜25%之第一表面 256b,而多角錐部253是位於增亮膜25〇b之第二表 258b。 在本實施例之發光二極體晶片模組2〇〇b中,由於辩 =膜250b同時具有多角錐部251與多角錐部⑸,因此發 ^二極體晶片21〇所發出的光束賤在通過增亮膜鳩 後,光束214b的光通量密度與準直性能夠被進一步提升。 差實施例 14 200937082 圖5為本發明第四實施例之發光二極體晶片模組的剖 面示意圖。請參照圖5,本實施例之發光二極體晶片模組 2〇〇c與上述發光二極體晶片模組200 (請參照圖2A)類 似,兩者的差異在於增亮膜250與螢光層260的相對配置 位置不同。在發光二極體晶片模組200c中,螢光層260 是配置於發光二極體晶片210之出光面212上,而增亮膜 250是配置於螢光層260上。發光二極體晶片模組2〇〇c的 優點與功效與上述發光二極體晶片模組2〇〇(請參照圖2A) 的優點與功效類似,在此不再重述。 值得注意的是,發光二極體晶片模組2〇〇c中的增亮 膜250亦可以以上述增亮膜250a (請參照圖3B)或上述 增亮膜250b (請參照圖4B)取代,而形成另外二種發光 一極體晶片模組。 第五貫施例 圖6為本發明第五實施例之發光二極體晶片模組的剖 面示意圖。請參照圖6 ’本實施例之發光二極體晶片模組 200d與上述發光二極體晶片模組200 (請參照圖2A)類 似’兩者的差異如下所述。發光二極體晶片模組2〇如不具 有上述螢光層260,而透光封膠240d包覆發光二極體晶片' 210與增亮膜250。在本實施例中’透光封膠24〇d掺有營 光物質。然而,在其他實施例中,亦可以以不摻有榮光物 質的透光封膠來取代透光封膠240d。 值得注意的是’發光二極體晶片模組2〇〇d中的增亮 15In an embodiment of the invention, the LED chip module further includes a phosphor layer disposed on the first light emitting surface. The light-transmissive sealant further covers the phosphor layer, and the second light-emitting surface is located between the brightness enhancement film and the phosphor layer. In one embodiment of the invention, the polygonal pyramids are located on the first surface. The apex angles of the polygonal pyramids point toward the light-transmissive sealant, and the second surface faces. Hooks Ten In one embodiment of the invention, the polygonal pyramids are located on the second surface. The apex angle of these polygonal pyramids points away from the direction of the light-transmissive sealant, and the first surface is a flat surface. In one embodiment of the invention, the polygonal pyramids are located on the first surface and the second surface. The apex angle of the polygonal taper on the first surface points toward the light-transmissive sealant, and the apex angle of the polygonal taper on the second surface points away from the direction of the light-transmissive sealant. The invention further provides a light source module comprising at least one light emitting element, a light guiding unit and a brightness enhancing film. The illuminating element is adapted to emit a light beam. The light guiding unit is disposed on the transmission path of the light beam and has a light incident surface and a light emitting surface. The brightness enhancement film is disposed on the light incident surface. The light beam from the illuminating element will sequentially penetrate the brightness enhancing film and the light incident surface into the light guiding unit, and will be transmitted from the light emitting surface to the outside of the light guiding unit. In one embodiment of the invention, the brightness enhancing film has a first surface facing the light incident surface and a second surface facing away from the light incident surface. The brightness enhancing film has a plurality of polygonal pyramids which are located on the first surface and/or the second surface and are arranged in a polygonal array. The apex angles of the polygonal pyramids may be directed toward the light entrance surface or directed away from the light entrance surface. In one embodiment of the invention, the brightness enhancing film has a first surface facing the light incident surface and a second surface facing away from the light incident surface. The brightness enhancing film has a plurality of first strip-shaped protrusions on the first surface, the first strip-shaped protrusions are arranged along a first direction, and each of the first strip-shaped protrusions is along a first A direction extending substantially perpendicular to the second direction. The brightness enhancing film may further have a plurality of second strip-shaped protrusions on the second surface, the second strip-shaped protrusions are arranged along a third direction, and each of the second strip-shaped protrusions is along a Extending in a fourth direction that is substantially perpendicular to the third direction. The angle between the fourth direction and the second direction is greater than the twist. In one embodiment of the invention, the fourth direction is substantially perpendicular to the second direction. In one embodiment of the invention, the brightness enhancing film has a first surface facing the light incident surface and a second surface facing away from the light incident surface. The brightness enhancing film has a plurality of second strip-shaped protrusions on the second surface, the second strip-shaped protrusions are arranged along a third direction, and each of the second strip-shaped protrusions is along a first The three directions extend in a substantially vertical fourth direction. In the light-emitting diode chip module according to an embodiment of the present invention, the light emitted by the light source and the polar body wafer is first transmitted through the brightness enhancement film and then propagated to the outside, so that the light emitting diode chip module can Provide a more concentrated beam. In the light source module of the present invention, the light source module can provide a light source with higher brightness because the light-emitting element emits a lighter and then rides the light guide unit. The above described features and advantages of the invention will be apparent from the following description. [Embodiment] FIG. 2A is a cross-sectional view of a light-emitting diode chip module according to a first embodiment of the present invention, and FIG. 2B is a schematic cross-sectional view of the light-emitting diode chip of FIG. 2A. FIG. 2A is a bottom view of the brightness enhancement film of FIG. 2A with its first surface facing upwards and FIG. 2D is a lower view of the brightness enhancement film of FIG. 2A. Referring to FIG. 2A to FIG. 2D, the LED module 2A of the present embodiment includes a light emitting diode chip 210, a brightness enhancing film 250, and a phosphor layer 260. The light-emitting diode wafer 210 has a light-emitting surface 212. The brightness enhancement film is disposed on the light exit surface 212. The phosphor layer 260 is disposed on the bright film 25A. The light-emitting diode chip 21 is adapted to emit a light beam 2M. After the light beam is emitted from the light exit surface m, it passes through the brightness enhancement film 250 and the phosphor layer 26 in sequence. In this embodiment, the LED array 21 includes a first electrode 272a, a semiconductor substrate π disposed on the first electrode layer 272 & π, and a first semiconductor layer disposed on the semiconductor substrate 274. a, a second semiconductor layer 配置 disposed on the first semiconductor layer 276a, and a second electrode 272b disposed on the 10th 200937082 second semiconductor layer 276b. The second electrode 272b exposes a portion of the second semiconductor layer 276b, and the surface of the second semiconductor layer 276b facing away from the first semiconductor layer 276a is the light exit surface 212. The first semiconductor layer 276a and the second semiconductor layer 276b are, for example, a p-type semiconductor layer and an n-type semiconductor layer, respectively, or an N-type semiconductor layer and a P-type semiconductor layer, respectively. . The light beam 214 emitted by the p-n junction between the first semiconductor layer 276a and the second semiconductor layer 276b penetrates the second semiconductor layer 276b' and exits the LED substrate 210 via the light exit surface 212. It should be noted that the LED array 210 illustrated in FIG. 2B is a surface emitting type LED chip, and the structure thereof is only used for example and not to limit the present invention. In other embodiments not shown, the light-emitting monolithic wafer may be an edge emitting type light emitting diode chip and the brightness enhancing film is disposed on the light emitting surface of the side emitting light emitting diode chip. on. Alternatively, the light emitting diode chip may be a light emitting diode wafer of another structure. In the present embodiment, the brightness enhancing film 250 has a first surface 256 facing the LED array 210 and a second surface 258 facing away from the LED substrate 21A. Further, the 'brightening film 25' has a plurality of polygonal pyramid portions 251 which are located on the first surface 256 and are arranged in a polygonal array. The polygonal pyramid portion 251 is, for example, an N-corner taper portion, wherein Ng3. In the present embodiment, the outer corner taper portion 251 is, for example, a quadrangular pyramid portion, and these quadrangular pyramid portions are arranged in a quadrangular array. Moreover, in the present embodiment, the apex angle 259 of the polygonal pyramid portions 251 is directed to the LED array 210, that is, the polygonal pyramid portions 251 11 200937082 are convex toward the LED array 210. Additionally, the second surface 258 is, for example, planar. The polygonal tapered portion 251 is, for example, a positive N-corner taper, and each inner corner of the bottom surface of the opposing apex angle 259 is equal to 180 (N_2) / N degrees, where N23. In the present embodiment, N = 4, so each inner angle of the bottom surface is equal to 90 degrees. However, in other embodiments, the polygonal pyramid portion may also be an N-corner tapered portion whose sides are not completely equal. In the present embodiment, the phosphor layer 260 is a film layer doped with a fluorescent substance. The fluorescent material is, for example, Yttrium Aluminum Garnet (YAG) or other suitable fluorescent material. In the present embodiment, the light-emitting diode chip 210 can be disposed on a carrier 220 and electrically connected to the carrier 220. Specifically, the carrier 220 is, for example, a lead frame. However, in other embodiments, the carrier can also be a circuit board or other suitable carrier. In addition, in the embodiment, the LED package 200 further includes a light-transmissive seal 240 ′ to cover the LED wafer 210 and the brightness enhancement film 250. Further, a portion of the carrier 220 in the present embodiment may be selectively covered by a molding member 230. The molding member 230 has an opening 232 to expose the LED wafer 210, the brightness enhancing film 250, and the phosphor layer 260, and the light transmissive encapsulant 240 is filled in the opening 232. Further, the molded member 230 is made of, for example, a material that is opaque to light. In this embodiment, the LED chip assembly 200 has a brightness enhancement film 250' and the light beam 214 emitted by the LED chip 21 is passed through the brightness enhancement film 25, and the beam 214 is in a first direction dl. The divergence angle 0 丨 and the divergence angle (not shown) in the second direction d2 perpendicular to the first direction dl in 12 200937082 may be reduced by the refraction of the polygonal pyramid portion 251, so the light emitting diode chip module 200 can provide a relatively concentrated beam 214. In this way, the light flux density of the light beam 214 can be higher, and the light-emitting diode chip module 2 can also be applied to applications requiring a higher collimating light source. 3A is a cross-sectional view of a light-emitting diode chip module according to a second embodiment of the present invention, and FIG. 3B is a perspective view of the brightness enhancing film of FIG. 3A with its second surface facing upward. Referring to FIG. 3A and FIG. 3B, the LED array 200a of the present embodiment is similar to the above-described LED chip module 2 (see FIG. 2A). The difference between the two is as follows. In the light-emitting diode wafer module 200a, the first surface 256a of the brightness enhancing film 250a is, for example, a flat surface. Further, the polygonal pyramid portion 253 of the brightness enhancement film 250a is located on the second surface 258a. The outer corner taper 253 is, for example, an N-corner taper. The apex angle 259 of the polygonal tapered portion 253 is directed away from the direction of the light-emitting diode wafer 210, that is, the polygonal tapered portion 253 is convex toward the direction away from the light-emitting diode wafer 210. In the present embodiment, the polygonal tapered portion 253 is similar to the above-described polygonal tapered portion 251 (shown in Fig. 2C). However, in other embodiments, the polygonal taper on the second surface may also be similar to the other types of polygonal pyramids located on the first surface, and the difference between the first surface and the polygonal taper on the second surface. The top corners point to different directions. In the light-emitting diode chip module 200a, after the light beam 214a emitted by the light-emitting diode chip 13 200937082 210 passes through the brightness enhancement film 250, the divergence angle of the light beam 214a in the first direction d1 and the second direction d2 may be Since the polygonal tapered portion 253 is reduced in refraction, the light-emitting diode chip module 200a can provide a relatively concentrated light beam 214a. In this way, the light flux of the light beam 214a can be higher, and the light emitting diode chip module 2〇〇a can also be applied to a situation where a higher collimating light source is required. 4A is a cross-sectional view of a light emitting diode chip module according to a third embodiment of the present invention, and FIG. 4B is a perspective view of the brightness enhancing film of FIG. 4A. Referring to FIG. 4A and FIG. 4B, the LED array 2B of the present embodiment is similar to the LED chip module 2 (please refer to FIG. 2A), and the difference between the two is as follows. . In the light-emitting diode chip module 2〇〇b, the brightness enhancement film 25〇b has the above-described polygonal pyramid portions 251 (please refer to FIG. 2c to FIG. 4B at the same time) and the above-described polygonal pyramid portions 253 (please refer to FIG. SR at the same time). And the figure), wherein the polygonal pyramid portion 25 is located on the first surface 256b of the brightness enhancement film 25%, and the polygonal pyramid portion 253 is located in the second surface 258b of the brightness enhancement film 25A. In the light-emitting diode chip module 2B of the present embodiment, since the film 250b has both the polygonal taper portion 251 and the polygonal pyramid portion (5), the light beam emitted from the diode chip 21 is present. The luminous flux density and collimation of the beam 214b can be further enhanced by brightening the film. Poor Embodiment 14 200937082 FIG. 5 is a cross-sectional view showing a light emitting diode chip module according to a fourth embodiment of the present invention. Referring to FIG. 5, the LED module 2〇〇c of the embodiment is similar to the LED chip module 200 (please refer to FIG. 2A), and the difference between the two is that the brightness enhancement film 250 and the fluorescent film are combined. The relative arrangement positions of the layers 260 are different. In the light-emitting diode chip module 200c, the phosphor layer 260 is disposed on the light-emitting surface 212 of the light-emitting diode wafer 210, and the brightness enhancement film 250 is disposed on the phosphor layer 260. The advantages and effects of the LED chip module 2〇〇c are similar to those of the above-described LED chip module 2 (please refer to FIG. 2A), and will not be repeated here. It should be noted that the brightness enhancement film 250 in the LED chip module 2〇〇c can also be replaced by the brightness enhancement film 250a (please refer to FIG. 3B) or the brightness enhancement film 250b (please refer to FIG. 4B). The other two kinds of light-emitting one-pole wafer modules are formed. Fifth Embodiment FIG. 6 is a cross-sectional view showing a light emitting diode chip module according to a fifth embodiment of the present invention. Referring to Fig. 6, the difference between the LED array 200d of the present embodiment and the above-described LED array 200 (see Fig. 2A) is similar as follows. The light-emitting diode chip module 2 does not have the above-mentioned phosphor layer 260, and the light-transmissive sealant 240d covers the light-emitting diode chip '210 and the brightness enhancement film 250. In the present embodiment, the light-transmissive sealant 24〇d is doped with a camphorescent substance. However, in other embodiments, the light-transmissive sealant 240d may be replaced by a light-transmissive sealant that is not doped with a glory material. It is worth noting that the brightness of the light-emitting diode chip module 2〇〇d is 15

200937082 膜250亦可以以上述增亮膜25〇a (請參照圖3B)或上述 增亮膜250b (請參照圖4B)取代,而形成另外二種發光 二極體晶片模組。 第六實施例 圖7為本發明第六實施例之發光二極體晶片模組的剖 面不意圖。請參考圖7,本實施例之發光二極體晶片模組 200e與上述發光二極體晶片模組2〇〇c(請參照圖5 )類似, 兩者的差異如下所述。在發光二極體晶片模組2〇〇e中,增 亮膜250是配置於透光封膠24〇e外部,而不被其所包覆曰。 具體而言,透光封膠240e包覆發光二極體晶片21〇與^光 層260,並具有一出光面242。增亮膜25〇是配置於^ 膠240e的出光面242上,其中出光面242是位於择哀 250與螢光層260之間。此外,增亮膜250的多角錐:儿、 之頂角259指向透光封膠240e。 ^ 251 此外,發光二極體晶片模組200e中的辦意胞 J日冗Μ 250亦 可以以上述增亮膜25〇a (請參照圖3Β)取代,而/ 一種發光二極體晶片模組,其中增亮膜25〇a的多^成f 253之頂角259指向遠離透光封膠240e的方向。g,雜 力外,發" 光二極體晶片模組200e中的增亮膜250亦可以以 、> 膜250b (請參照圖4B)取代’而形成又一稽路止增冗 尤二極艚 晶片模組’其中增亮膜250b的多角錐部251夕TS & , 貝角259 指向透光封膠240e,而多角錐部253之頂角259 _ ^ 透光封膠24〇e的方向。 胃向遂離 200937082 第七實施例 圖8為本發明第七實施例之發光二極體晶片模組的剖 面示意圖。請參照圖8,本實施例之發光二極體晶片模组 200f與上述發光二極體晶片模組200e(請參照圖7)類似, 兩者的差異如下所述。發光二極體晶片模組200f不|有上 述螢光層260 (請參照圖7),而透光封膠240f包覆發光 二極體晶片210。在本實施例中,透光封膠240f摻有榮光 物質。然而,在其他實施例中,亦可以以不摻雜營光物質 的透光封膠來取代透光封膠240f。 、 此外’發光二極體晶片模組200f中的增亮膜250亦可 以以上述增亮膜250a (請參照圖3B)或上述增亮膜25〇b (請參照圖4B)取代,而形成其他二種發光二極體晶片模 施例 ^圖9為本發明第八實施例之發光二極體晶片模組的增 党膜之下視圖。請參照圖9,本實施例之發光二極體晶片 模組的增亮膜250g與上述增亮膜 250 (如圖2D所繪示) 類似’兩者的差異在於增亮膜25〇g的多角錐部251g為三 角錐部’且多角錐部251g呈三角形陣列排列。 圖10A為本發明第九實施例之光源模組的結構示意 200937082 圖,而圖10Β為圖1〇Α中之增亮膜的立體圖。請參照圖 10A與圖10B,本實施例之光源模組300包括一發光元件 310、一導光單元320以及一增亮膜350。發光元件31〇適 於發出一光束312。在本實施例中,發光元件31〇例如為 發光一極體或其他適當的發光元件。導光單元320配置於 光束312的傳遞路徑上,並具有一入光面322與一出光面 324。在本實施例中,導光單元32〇例如為一導光枉,而入 光面322為導光柱的一端面。此外,導光單元32〇可更具 有一與出光面324相對之表面326,而入光面322連接於 出光面324與表面326之間。然而,在其他實施例中,導 光卓元亦可以是一導光板。 曰壳胰·35ϋ配置於入光面322上。來自發光元件 的Ϊ束312會依序穿透增亮膜350與入光® 322而進入導 光早兀320中,並由出光面324傳遞至導光單元32〇 在本實施射,表面326上可配置有一反射單元%The film 250 may be replaced by the brightness enhancement film 25A (see Fig. 3B) or the brightness enhancement film 250b (see Fig. 4B) to form two other light emitting diode chip modules. Sixth Embodiment Fig. 7 is a cross-sectional view showing a light emitting diode chip module according to a sixth embodiment of the present invention. Referring to FIG. 7, the LED chip module 200e of the present embodiment is similar to the above-described LED chip module 2〇〇c (please refer to FIG. 5), and the difference between the two is as follows. In the light-emitting diode chip module 2〇〇e, the brightness enhancement film 250 is disposed outside the light-transmissive sealant 24〇e without being covered by it. Specifically, the light-transmissive encapsulant 240e covers the light-emitting diode chip 21 and the light-emitting layer 260, and has a light-emitting surface 242. The brightness enhancement film 25 is disposed on the light exit surface 242 of the solder paste 240e, wherein the light exit surface 242 is located between the contact layer 250 and the phosphor layer 260. In addition, the polygonal pyramid of the brightness enhancing film 250 is pointed at the apex angle 259 of the brightness enhancing film 250. ^ 251 In addition, the illuminating diode in the LED chip module 200e can also be replaced by the brightness enhancement film 25A (refer to FIG. 3A), and a light-emitting diode chip module The apex angle 259 of the brightness enhancement film 25A is directed away from the light-transmissive sealant 240e. g, the power, the lightening film 250 in the photodiode chip module 200e can also be replaced by > film 250b (please refer to FIG. 4B) to form another path to increase the redundancy and especially the second pole The wafer module 'in which the polygonal pyramid portion 251 of the brightness enhancement film 250b is TS & the angle 259 is directed to the light-transmissive encapsulant 240e, and the apex angle of the polygonal pyramid portion 253 is 259 _ ^ the direction of the transparent encapsulant 24〇e . Gastric Detachment 200937082 Seventh Embodiment FIG. 8 is a cross-sectional view showing a light emitting diode chip module according to a seventh embodiment of the present invention. Referring to FIG. 8, the LED chip module 200f of the present embodiment is similar to the LED chip module 200e (please refer to FIG. 7), and the difference between the two is as follows. The light-emitting diode chip module 200f does not have the above-described phosphor layer 260 (please refer to FIG. 7), and the light-transmitting sealant 240f covers the light-emitting diode chip 210. In the present embodiment, the light-transmissive encapsulant 240f is doped with a glory material. However, in other embodiments, the light-transmissive sealant 240f may be replaced by a light-transmissive sealant that is not doped with a camping material. In addition, the brightness enhancement film 250 in the 'light emitting diode chip module 200f may be replaced by the brightness enhancement film 250a (please refer to FIG. 3B) or the brightness enhancement film 25〇b (please refer to FIG. 4B) to form other Two kinds of light-emitting diode chip molds are shown in Fig. 9. Fig. 9 is a bottom view of the square film of the light-emitting diode chip module according to the eighth embodiment of the present invention. Referring to FIG. 9, the brightness enhancement film 250g of the LED chip module of the present embodiment is similar to the brightness enhancement film 250 (shown in FIG. 2D). The difference between the two is that the brightness enhancement film is 25 〇g. The pyramid portion 251g is a triangular tapered portion' and the polygonal tapered portion 251g is arranged in a triangular array. 10A is a perspective view showing a structure of a light source module according to a ninth embodiment of the present invention, and FIG. 10A is a perspective view of a brightness enhancement film in FIG. Referring to FIG. 10A and FIG. 10B, the light source module 300 of the present embodiment includes a light emitting element 310, a light guiding unit 320, and a brightness enhancing film 350. The light-emitting element 31 is adapted to emit a light beam 312. In the present embodiment, the light-emitting element 31 is, for example, a light-emitting diode or other suitable light-emitting element. The light guiding unit 320 is disposed on the transmission path of the light beam 312 and has a light incident surface 322 and a light emitting surface 324. In this embodiment, the light guiding unit 32 is, for example, a light guide, and the light incident surface 322 is an end surface of the light guiding column. In addition, the light guiding unit 32 can have a surface 326 opposite to the light emitting surface 324, and the light incident surface 322 is connected between the light emitting surface 324 and the surface 326. However, in other embodiments, the light guide can also be a light guide. The clam shell pancreas 35 ϋ is disposed on the light incident surface 322. The bundles 312 from the illuminating elements will sequentially penetrate the brightness enhancement film 350 and the light entrance 322 into the light guide 320, and be transmitted from the light exit surface 324 to the light guide unit 32, on the surface 326. Configurable with a reflective unit%

將光束312反射至出光面324,其中反射單幻 反射片或反射膜。 J如為 在本實施例中,增亮膜35〇具有一面向入 弟-表面356與-背向入光面322的第二表面说。= 膜35。可具有多個位於第—表面356的第 θ儿 35卜這些第一條狀凸起部351沿著一第一方向^;凸=部 且每-第-條狀凸起部351沿著一與第一方向^ 1 垂直的第二方向d2,延伸。具體而言,第一 為上 例如呈三脉狀’而第—條狀凸起部351的三角^^1 18 200937082 一尖端359 ’且尖端359 t 不限定第-條狀凸起部^向人光面322。然而,本發明並 施例中,第—條狀凸起^ 在其他未綠示的實 例而言,在另一未給 疋王八他形態的條狀。舉 截面亦可以具有-^條狀凸起部的橫 者,第二表面358例如為一平面。取代上述尖端柳。再 ❹ 在本實施例中,光源模組3〇〇 光元件_所發出的光束312在通過^膜= 351的狀私f 發散角Θ1,會因第—條狀凸起部 、射作用而縮小,因此由出光面324出射的光束312 ㈣加,料使光賴組職供的光源之 Μ值得注意的是’本發明並不限定光源模組3 〇 〇所且有 =光元件31〇之數量為-個,在其他實施财,光源模 、=可μ具有多個發光元件這些發光元件可配置於導 一單兀的入光面旁。此外,本發明亦不限定第—方向以, 是垂直於出光面324,且不限定第二方向d2,是平行於出光 面。在其他實施例中,亦可以是第二方向d2,垂直於出光 面32),而第一方向dl’平行於出光面324。或者,第一方 向d!與第二方向d2,亦可以是相對出光面324傾斜。 圖11A為本發明第十實施例之光源模組的結構示意 θ而圖11B為圖11A中之増亮膜的立體圖。請參考圖 19 ❹ Ο 200937082 11Α與圖11β,本實施例之光源模組300a與上述光源模組 300 (睛參照圖1 〇A )類似’兩者的差異如下所述。在光源 模組300a中,增亮膜350a之第一表面356a為平面。此外, 增亮膜350a具有多個位於第二表面358a的第二條狀凸起 部353。在本實施例中,第二條狀凸起部353的形狀與上 述第一條狀凸起部351 (請參照圖1〇B)相同,而第二條 狀凸起部353之三角截面的尖端359指向遠離入光面322 的方向。然而,在其他未繪示的實施例中,第二條狀凸起 部^53亦可以呈其他形態的條狀。這些第二條狀凸起部扮 石著-第二方向d3’排列,且每一第二條狀凸起部扮凡 著-與第三方向d3,實質上垂直的第四方向如, /口 在光源模組300a中,而發光元件3 3❿在通過增亮膜挪後,光束仙在第j ,角會因第二條狀凸起部353的折射作用一而方^ 3 源模組300a所能提供的光源之亮度。 進而k升先 於出的曰是,本發明亦不限定第四方向*是垂直 =實施例中,亦可以是第三方向幻 出出先面二 而第四方向d4,平行於出光面324。或者,g出先面324 ’ 第四方向⑽亦可以是相對出光面汹傾斜方向狀與 复士一實施例 圖以為本發明第十一實施例之光源模組 的結構示 20 200937082 意圖,而圖12B為圖12A中之择古 :3: = ):3: :ί的差異如下所述:光源 日冗膜 问時具有上述這些第一铬壯Λ =51 (請同時參照® 1〇Β與圖12Β)與上此 部,請同時_圖仙與圖叫其;二 356bl凸起β 351疋位於增亮膜3通之第—表面 356b’而這些第二條狀凸起部如是位於增亮膜3篤之第 :表面358b。此外’第四方向d4,(即第二條狀凸起部奴 、延伸方向)與第二方向d2,(即第一條狀凸起部 351的 延伸方向)的夾角大於0度。在本實施例中,第四方向d4, 與第二方向d2,例如為實質上互相垂直。 士在本實施例之光源模組30〇b中,由於增亮膜35〇b同 捋具有延伸方向不同的第一條狀凸起部351與第二條狀凸 ,4 353,因此發光元件310所發出的光束312b在通過增 ’匕膜350b後,光束312b在第一方向dl’與第三方向d3, 上的發散角皆會縮小,而使得光源模組3〇〇b所能提供的光 源之亮度進一步提升。 值得注意的是’本發明亦不限定第一方向dl,是垂直 於出光面324’且不限定第二方向d2,是平行於出光面,亦 不限定第三方向d3’是平行於出光面,更不限定第四方向 d4’是垂直於出光面324。在其他實施例中,亦可以是第二 方向d2,垂直於出光面324’第一方向dl,平行於出光面324 第三方向d3’垂直於出光面324,而第四方向d4,平行於出 21 200937082 光面324。或者,第—方向di,、第二方向d2,、第三方向 d3’與第四方向似’亦可以是相對出光面324傾斜。 弟十二實你丨 圖13為本發明第十二實施例之光源模組的結構示意 圖。請參照圖13,本實施例之光源模組3〇〇c與上述光源 模組300 (如圖i〇A所繪示)類似,兩者的差異如下所述。 ❹ 在光源模組300c中,導光單元320c之入光面322c與出光 面324c彼此相對,而多個發光元件31〇則配置於入光面 322c 旁。 值得注意的是,在其他未繪示的實施例中,光源模組 300、300a〜300c中之增亮膜350、35〇a、350b亦可以用 第一至第八實施例中的增亮膜取代,例如是以增亮膜 250、250a、250b、250g 取代,其中第一表面 256、256a、 256b 面向入光面 322、322c,第二表面 258、258a、258b 背向入光面322、322c,多角錐部251的頂角259指向入 光面322、322c ’而多角錐部253的頂角259指向遠離入 光面322、322c的方向。 綜上所述,在本發明之一實施例中,由於發光二極體 晶片所發出的光束會先經過增亮膜後再傳播至外界,因此 發光二極體晶片模組能夠提供較為集中且光通量密度較高 的光束。如此一來,便可以使發光二極體晶片模組應用於 需要較咼準直性光源的場合。此外,在本發明一實施例之 光源模組中’由於發光元件所發出的光束在通過導光單元 22 200937082 之前,會先通過增亮膜,因此光源模組所提供的光夕上 度較高。 ’、冗 為準 雖然本發明已以多個實施例揭露如上,然其並_ 限定本發明,任何所屬技術領域中具有通常知識者, 脫離本發明之精神和範圍内,當可作些許之更動與、、門不 因此本發明之保護範圍當視後附之申請專利範圍^定者Light beam 312 is reflected to light exit surface 324 where a single magic reflection sheet or reflective film is reflected. In the present embodiment, the brightness enhancement film 35A has a second surface facing the intern-surface 356 and the back-facing light-emitting surface 322. = film 35. There may be a plurality of the first strips 351 located at the first surface 356. The first strip-like protrusions 351 are along a first direction; the convex portion and each of the - strip-like protrusions 351 are along a The first direction ^ 1 is perpendicular to the second direction d2 and extends. Specifically, the first is a triangular shape of the first strip-shaped convex portion 351, for example, a triangular shape and a tip 359 ′ and the tip end 359 t does not define the first strip-shaped convex portion. Smooth surface 322. However, in the present invention and the embodiment, the first strip-like projections are in the form of strips which are not given to the other in the case of other examples which are not green. The lifting section may also have a traverse of the strip-shaped projections, and the second surface 358 is, for example, a plane. Replace the above-mentioned tip willow. In this embodiment, the light beam 312 emitted by the light source module 3 of the light source module 3 is divergent angle Θ1 in the shape of the film 351, which is reduced by the first strip-like convex portion and the action. Therefore, the light beam 312 (4) emitted by the light-emitting surface 324 is added, so that it is worth noting that the light source module 3 is not limited to the number of the light-emitting elements 31. In other implementations, the light source mode, the φ can have a plurality of light-emitting elements, and the light-emitting elements can be disposed beside the light incident surface of the single turn. Further, the present invention does not limit the first direction to be perpendicular to the light exit surface 324, and does not define the second direction d2, which is parallel to the light exit surface. In other embodiments, the second direction d2 may be perpendicular to the light exit surface 32), and the first direction dl' may be parallel to the light exit surface 324. Alternatively, the first direction d! and the second direction d2 may be inclined with respect to the light exit surface 324. Fig. 11A is a perspective view showing the structure of a light source module according to a tenth embodiment of the present invention, and Fig. 11B is a perspective view showing a bright film of Fig. 11A. Referring to FIG. 19 Ο Ο 200937082 11Α and FIG. 11β, the difference between the light source module 300a of the present embodiment and the light source module 300 (the eye is similar to FIG. 1A) is as follows. In the light source module 300a, the first surface 356a of the brightness enhancement film 350a is a flat surface. Further, the brightness enhancement film 350a has a plurality of second strip-like projections 353 on the second surface 358a. In the present embodiment, the shape of the second strip-shaped convex portion 353 is the same as that of the first strip-shaped convex portion 351 (please refer to FIG. 1B), and the tip end of the triangular-shaped cross-section of the second strip-shaped convex portion 353 359 points away from the direction of the light incident surface 322. However, in other embodiments not shown, the second strip-like projections 53 may also be in the form of strips of other shapes. The second strip-like protrusions are arranged in a stone-second direction d3', and each of the second strip-shaped protrusions is in a normal-to-third direction d3, a substantially vertical fourth direction such as /port In the light source module 300a, after the light-emitting element 3 3 is moved through the brightness enhancement film, the beam is at the jth angle, and the angle is caused by the refraction of the second strip-shaped protrusion 353. The brightness of the light source that can be provided. Further, the k s is preceded by the 曰, and the present invention is not limited to the fourth direction * is vertical = in the embodiment, the third direction may be illusory with the first face and the fourth direction d4, parallel to the light exit face 324. Alternatively, the g-out surface 324' fourth direction (10) may be an oblique direction with respect to the light-emitting surface, and an embodiment of the light-receiving embodiment is shown in FIG. 12B for the structure of the light source module according to the eleventh embodiment of the present invention, and FIG. 12B For the selection in Figure 12A: 3: = ): 3: : ί The difference is as follows: the source of the daytime film has the above-mentioned first chrome Λ = 51 (please refer also to ® 1 〇Β and Figure 12 Β ) and the upper part, please also _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The first part: surface 358b. Further, the angle between the fourth direction d4, that is, the second strip-shaped convex portion, the extending direction, and the second direction d2, that is, the extending direction of the first strip-shaped convex portion 351 is larger than 0 degree. In the present embodiment, the fourth direction d4 and the second direction d2 are, for example, substantially perpendicular to each other. In the light source module 30〇b of the present embodiment, since the brightness enhancement film 35〇b has the first strip-shaped convex portion 351 and the second strip-shaped convex portion 4 353 having different extending directions, the light-emitting element 310 After the emitted light beam 312b passes through the increased 匕 film 350b, the divergence angle of the light beam 312b in the first direction dl' and the third direction d3 is reduced, so that the light source module 3 〇〇b can provide the light source The brightness is further improved. It should be noted that the present invention also does not limit the first direction dl, is perpendicular to the light exit surface 324' and does not define the second direction d2, is parallel to the light exit surface, and does not limit the third direction d3' is parallel to the light exit surface. The fourth direction d4 ′ is not limited to be perpendicular to the light exit surface 324 . In other embodiments, the second direction d2 may be perpendicular to the first direction dl of the light exit surface 324', parallel to the light exit surface 324. The third direction d3' is perpendicular to the light exit surface 324, and the fourth direction d4 is parallel to the output. 21 200937082 Smooth surface 324. Alternatively, the first direction di, the second direction d2, the third direction d3' and the fourth direction may be inclined with respect to the light exit surface 324. 12 is a schematic view of the structure of a light source module according to a twelfth embodiment of the present invention. Referring to FIG. 13, the light source module 3〇〇c of the embodiment is similar to the light source module 300 (shown in FIG. 2A), and the difference between the two is as follows. ❹ In the light source module 300c, the light incident surface 322c and the light exit surface 324c of the light guiding unit 320c face each other, and the plurality of light emitting elements 31 are disposed beside the light incident surface 322c. It should be noted that in other embodiments not shown, the brightness enhancement films 350, 35A, 350b of the light source modules 300, 300a to 300c can also use the brightness enhancement film of the first to eighth embodiments. Substituted, for example, by brightness enhancing films 250, 250a, 250b, 250g, wherein first surfaces 256, 256a, 256b face light entrance surfaces 322, 322c, and second surfaces 258, 258a, 258b face away from light entrance surfaces 322, 322c The apex angle 259 of the polygonal pyramid portion 251 is directed to the light incident surfaces 322, 322c' and the apex angle 259 of the polygonal pyramid portion 253 is directed away from the light incident surfaces 322, 322c. In summary, in one embodiment of the present invention, since the light beam emitted from the LED chip passes through the brightness enhancement film and then propagates to the outside, the LED chip module can provide a relatively concentrated luminous flux. A light beam with a higher density. In this way, the LED chip module can be applied to a situation where a relatively collimated light source is required. In addition, in the light source module according to an embodiment of the present invention, the light source emitted by the light source module passes through the brightness enhancement film before passing through the light guiding unit 22 200937082, so that the light source module provides a higher light level. . The invention has been described above in terms of a plurality of embodiments, which are intended to be illustrative of the present invention, and those of ordinary skill in the art, which are within the spirit and scope of the invention, may be modified. And, the door does not therefore have the scope of protection of the present invention.

【圖式簡單說明】 圖1為一種習知表面黏著型發光二極體晶片模組 面示意圖。 σ 圖2Α為本發明第一實施例之發光二極體晶片模組 剖面不意圖。 ’ ' 圖。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a conventional surface-adhesive light-emitting diode chip module. σ Figure 2 is a cross-sectional view of a light-emitting diode chip module according to a first embodiment of the present invention. ’ 'Figure.

圖 圖2Β為圖2Α中之發光二極體晶片的細部剖面示魚 圖2C為圖2Α中之增亮膜以其第—表面朝上的立體 圖2D為圖2Α中之增亮膜的下視圖。 圖3Λ為本發明第二實施例之發光二極體晶片模組的 剖面示意圖。 圖3Β為圖3Α中之增亮膜以其第二表面朝上的立體 圖。 圖4Α為本發明第三實施例之發光二極體晶片模組的 剖面示意圖。 '' 23 200937082 ❹ 圖4B為圖4A中之增亮膜的立體圖。 圖5為本發明第四實施例之發光二極體晶片模級 面示意圖。 、、糾 圖6為本發明第五實施例之發光二極體晶片么 面示意圖。 杲、、且 圖7為本發明第六實施例之發光二極體晶片模 面示意圖。 、'的剖 圖8為本發明第七實施例之發光二極體晶片 面示意圖。 、、、且的剖 圖9為本發明第八實施例之發光二極體晶片 亮膜之下視圖。 、、、且的增 圖10A為本發明第九實施例之光源模組的結構示 的剖 ❹ 意 而圖10B為圖1〇Α中之增亮膜的立體圖 圖11A為本發明第十實施例之光源模組的結 i 而圖11B為圖ΠΑ中之增亮膜的立體圖。 不思 圖12A為本發明第十一實施例之光源模組的姅 意圖,而圖12B為圖12Λ中之增亮膜的立體圖。…霉不 圖13為本發明第十二實施例之光源模組的蚨 圖。 Q傅不恩 圖 圖 【主要元件符號說明】 100 :表面黏著型發光二極體晶片模組 110、210、:發光二極體晶片 112、214、2l4a、214b、312、312a、3l2b:光 24 200937082 120 :導線架 130、230:模塑構件 132、232 :開口 140、240、240d、240e、240f :透光封膠 200、200a、200b、200c、200d、200e、200f :發光二 極體晶片模組 212、324、324c :出光面 220、380 :承載器 Ό 250、250a、250b、250g、350、350a、350b :增亮膜 251、251g、253 :多角錐部 256、256a、256b、356、356a、356b :第一表面 258、258a、258b、358、358a、358b :第二表面 259 :頂角 260 :螢光層 272a :第一電極 272b :第二電極 © 274:半導體基材 276a :第一半導體層 276b :第二半導體層 300、300a、300b、300c :光源模組 310 :發光元件 320、320c :導光單元 322、322c :入光面 326 ··表面 25 200937082 330 :反射單元 351 :第一條狀凸起部 353 :第二條狀凸起部 359 :尖端 dl、dl’ :第一方向 d2、d2’ :第二方向 d3’ :第三方向 d4’ :第四方向 0 1、β Γ :發散角Figure 2 is a detailed cross-sectional view of the light-emitting diode wafer of Figure 2A. Figure 2C is a bottom view of the brightness enhancing film of Figure 2 with its first surface facing upwards. Figure 2D is a bottom view of the brightness enhancing film of Figure 2 . 3 is a cross-sectional view showing a light emitting diode chip module according to a second embodiment of the present invention. Figure 3 is a perspective view of the brightness enhancing film of Figure 3 with its second surface facing up. 4 is a cross-sectional view showing a light emitting diode chip module according to a third embodiment of the present invention. '' 23 200937082 ❹ Figure 4B is a perspective view of the brightness enhancement film of Figure 4A. Fig. 5 is a schematic view showing the mold surface of a light-emitting diode wafer according to a fourth embodiment of the present invention. And FIG. 6 is a schematic view showing the surface of the light-emitting diode chip according to the fifth embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 7 is a schematic view showing the surface of a light-emitting diode wafer according to a sixth embodiment of the present invention. Fig. 8 is a schematic view showing the wafer surface of a light-emitting diode according to a seventh embodiment of the present invention. Figure 9 is a bottom view of a bright film of a light-emitting diode wafer according to an eighth embodiment of the present invention. 10A is a perspective view showing a structure of a light source module according to a ninth embodiment of the present invention, and FIG. 10B is a perspective view of a brightness enhancement film in FIG. 1A. FIG. 11A is a tenth embodiment of the present invention. Fig. 11B is a perspective view of the brightness enhancement film in Fig. 11B. 12A is a perspective view of a light source module according to an eleventh embodiment of the present invention, and FIG. 12B is a perspective view of the brightness enhancement film of FIG. Fig. 13 is a perspective view of a light source module according to a twelfth embodiment of the present invention. Q傅不图图 [Main component symbol description] 100: surface-adhesive LED chip module 110, 210, LED chip 112, 214, 2l4a, 214b, 312, 312a, 3l2b: light 24 200937082 120: lead frame 130, 230: molded member 132, 232: opening 140, 240, 240d, 240e, 240f: light transmissive seal 200, 200a, 200b, 200c, 200d, 200e, 200f: light emitting diode chip Modules 212, 324, 324c: light-emitting surfaces 220, 380: carrier Ό 250, 250a, 250b, 250g, 350, 350a, 350b: brightness enhancement film 251, 251g, 253: polygonal pyramid 256, 256a, 256b, 356 , 356a, 356b: first surface 258, 258a, 258b, 358, 358a, 358b: second surface 259: apex angle 260: phosphor layer 272a: first electrode 272b: second electrode © 274: semiconductor substrate 276a: First semiconductor layer 276b: second semiconductor layer 300, 300a, 300b, 300c: light source module 310: light-emitting elements 320, 320c: light-guiding unit 322, 322c: light-incident surface 326 · surface 25 200937082 330 : reflection unit 351 : first strip-shaped convex portion 353 : second strip-shaped convex portion 359 : tip end dl, dl': first direction d2 d2 ': second direction d3': a third direction d4 ': fourth direction 0 1, β Γ: divergence angle

2626

Claims (1)

200937082 十、申請專利範圍: 1. 一種發光二極體晶片模組,包括: 一發光二極體晶片,具有一出光面;以及 一增亮膜,配置於該出光面上,並具有一面向該發光 二極體晶片的第一表面與一背向該發光二極體晶片的第二 表面,且該增亮膜具有多個多角錐部,該些多角錐部位於 該第一表面及/或該第二表面,並呈多邊形陣列排列。 2. 如申請專利範圍第1項所述之發光二極體晶片模 組,其中該些多角錐部是位於該第一表面,該些多角錐部 的頂角指向該發光二極體晶片,且該第二表面為平面。 3. 如申請專利範圍第1項所述之發光二極體晶片模 組,其中該些多角錐部是位於該第二表面,該些多角錐部 的頂角指向遠離該發光二極體晶片的方向,且該第一表面 為平面。 4. 如申請專利範圍第1項所述之發光二極體晶片模 組,其中該些多角錐部是位於該第一表面及該第二表面, Ο 位於該第一表面的該些多角錐部的頂角指向該發光二極體 晶片,而位於該第二表面的該些多角錐部的頂角指向遠離 該發光二極體晶片的方向。 5. 如申請專利範圍第1項所述之發光二極體晶片模 組,更包括一螢光層,配置於該增亮膜上。 6. 如申請專利範圍第5項所述之發光二極體晶片模 組,更包括: 一承載器,其中該發光二極體晶片是配置於該承載器 27 200937082 上;以及 一透光封膠,包覆該發光二極體晶片、該增亮膜與該 螢光層。 組, 上; ❹ 7. 如申請專利範圍第1項所述之發光二極體晶片模 更包括: 一承載器,其中該發光二極體晶片是配置於該承載器 以及 一透光封膠,包覆該發光二極體晶片與該增亮膜。 8. —種發光二極體晶片模組,包括: 一發光二極體晶片,具有一出光面; 一螢光層,配置於該出光面上;以及 一增亮膜,配置於該螢光層上,並具有一面向該發光 二極體晶片的第一表面與一背向該發光二極體晶片的第二 表面,且該增亮膜具有多個多角錐部,該些多角錐部位於 該第一表面及/或該第二表面,並呈多邊形陣列排列。 9. 如申請專利範圍第8項所述之發光二極體晶片模 ⑩ 組,其中該些多角錐部是位於該第一表面,該些多角錐部 的頂角指向該發光二極體晶片,且該第二表面為平面。 10. 如申請專利範圍第8項所述之發光二極體晶片模 組,其中該些多角錐部是位於該第二表面,該些多角錐部 的頂角指向遠離該發光二極體晶片的方向’且該第一表面 為平面。 11. 如申請專利範圍第8項所述之發光二極體晶片模 組,其中該些多角錐部是位於該第一表面及該第二表面, 28 200937082 位於該第一表面的該些多角錐部的頂角指向該發光二極體 晶片,而位於該第二表面的該些多角錐部的頂角指向遠離 該發光二極體晶片的方向。 12.如申請專利範圍第8項所述之發光二極體晶片模 組,更包括: 一承載器,其中該發光二極體晶片是配置於該承載器 上;以及 ©—透光封膠,包覆該發光二極體晶片、該螢光層與該 增亮膜。 13.—種發光二極體晶片模組,包括: 一承載器; 一發光二極體晶片,配置於該承載器上,並具有一第 一出光面; 一透光封膠,包覆該發光二極體晶片,並具有一第二 出光面;以及 一增亮膜,配置於該第二出光面上,其中該第二出光 © 面是位於該增亮膜與該第一出光面之間,該增亮膜具有一 面向該透光封膠的第一表面與一背向該透光封膠的第二表 面,並具有多個多角錐部,該些多角錐部位於該第一表面 及/或該第二表面,並呈多邊形陣列排列。 14.如申請專利範圍第13項所述之發光二極體晶片模 組,其中該些多角錐部是位於該第一表面’該些多角錐部 的頂角指向該透光封膠,且該第二表面為平面。 15.如申請專利範圍第13項所述之發光二極體晶片模 29 200937082 組,其中該些多角錐部是位於該第二表面,該些多角錐部 的頂角指向遠離該透光封膠的方向,且該第一表面為平面。 16.如申請專利範圍第13項所述之發光二極體晶片模 組,其中該些多角錐部是位於該第一表面及該第二表面, _ 位於該第一表面的該些多角錐部的頂角指向該透光封膠, 而位於該第二表面的該些多角錐部的頂角指向遠離該透光 封膠的方向。 0 17.如申請專利範圍第13項所述之發光二極體晶片模 組,其中該第一出光面與該第二出光面實質上面向同一方 向。 18.如申請專利範圍第13項所述之發光二極體晶片模 組,更包括一螢光層,配置於該第一出光面上,其中該透 光封膠更包覆該螢光層,且該第二出光面是位於該增亮膜 與該螢光層之間。 19. 一種光源模組,包括: 至少一發光元件,適於發出一光束; ❹ 一導光單元,配置於該光束的傳遞路徑上’並具有一 入光面與一出光面;以及 一增亮膜,配置於該入光面上,其中來自該發光元件 的該光束會依序穿透該增亮膜與該入光面而進入該導光單 元中,並由該出光面傳遞至該導光單元外。 20.如申請專利範圍第19項所述之光源模組,其中該 增亮膜具有一面向該入光面的第一表面與一背向該入光面 的第二表面,且該增亮膜具有多個多角錐部,該些多角錐 30 200937082 部位於該第一表面及/或該第二表面,並呈多邊形陣列排 列。 21.如申請專利範圍第20項所述之光源模組,其中該 些多角錐部的頂角指向該入光面或指向遠離該入光面的方 向。 • 22.如申請專利範圍第19項所述之光源模組,其中該 增亮膜具有一面向該入光面的第一表面與一背向該入光面 的第二表面,且該增亮膜具有多個位於該第一表面的第一 條狀凸起部,該些第一條狀凸起部沿著一第一方向排列, 且每一該第一條狀凸起部沿著一與該第一方向實質上垂直 的第二方向延伸。 23.如申請專利範圍第22項所述之光源模組,其中該 增亮膜更具有多個位於該第二表面的第二條狀凸起部,該 些第二條狀凸起部沿著一第三方向排列,且每一該第二條 狀凸起部沿著一與該第三方向實質上垂直的第四方向延 伸,該第四方向與該第二方向的夾角大於〇度。 ❹ 24.如申請專利範圍第23項所述之光源模組,其中該 第四方向與該第二方向實質上垂直。 25.如申請專利範圍第19項所述之光源模組,其中該 增亮膜具有一面向該入光面的第一表面與一背向該入光面 的第二表面,且該增亮膜具有多個位於該第二表面的第二 條狀凸起部,該些第二條狀凸起部沿著一第三方向排列’ 且每一該第二條狀凸起部沿著一與該第三方向實質上垂直 的第四方向延伸。 31200937082 X. Patent application scope: 1. A light-emitting diode chip module, comprising: a light-emitting diode chip having a light-emitting surface; and a brightness enhancement film disposed on the light-emitting surface and having a surface facing a first surface of the light emitting diode chip and a second surface facing away from the light emitting diode chip, and the brightness enhancing film has a plurality of polygonal pyramid portions, the polygonal pyramid portions are located on the first surface and/or the The second surface is arranged in a polygonal array. 2. The illuminating diode chip module of claim 1, wherein the polygonal pyramids are located on the first surface, and the apex angles of the polygonal pyramids are directed to the LED chip, and The second surface is a flat surface. 3. The illuminating diode chip module of claim 1, wherein the polygonal pyramids are located on the second surface, and the apex angles of the polygonal pyramids are directed away from the LED substrate. Direction, and the first surface is a plane. 4. The illuminating diode chip module of claim 1, wherein the polygonal pyramid is located on the first surface and the second surface, and the plurality of pyramids located on the first surface The apex angle is directed to the LED chip, and the apex angles of the polygonal pyramids on the second surface are directed away from the LED substrate. 5. The light emitting diode chip module of claim 1, further comprising a phosphor layer disposed on the brightness enhancing film. 6. The light emitting diode chip module of claim 5, further comprising: a carrier, wherein the light emitting diode chip is disposed on the carrier 27 200937082; and a light transmissive sealant And coating the light emitting diode chip, the brightness enhancing film and the fluorescent layer. The illuminating diode chip module of the first aspect of the invention further includes: a carrier, wherein the illuminating diode chip is disposed on the carrier and a light transmissive sealant, The light emitting diode chip and the brightness enhancing film are coated. 8. A light-emitting diode chip module, comprising: a light-emitting diode chip having a light-emitting surface; a phosphor layer disposed on the light-emitting surface; and a brightness enhancement film disposed on the phosphor layer And having a first surface facing the LED chip and a second surface facing away from the LED chip, and the brightness enhancing film has a plurality of polygonal pyramids, wherein the polygonal pyramids are located The first surface and/or the second surface are arranged in a polygonal array. 9. The light emitting diode chip mold set 10 according to claim 8, wherein the polygonal pyramid portions are located on the first surface, and the apex angles of the polygonal pyramid portions are directed to the light emitting diode chip. And the second surface is a flat surface. 10. The illuminating diode chip module of claim 8, wherein the polygonal pyramids are located on the second surface, and the apex angles of the polygonal pyramids are directed away from the LED substrate. Direction 'and the first surface is a plane. The illuminating diode chip module of claim 8, wherein the polygonal pyramid is located on the first surface and the second surface, 28 200937082, the plurality of pyramids located on the first surface The top corner of the portion is directed to the LED chip, and the apex angles of the plurality of pyramids on the second surface are directed away from the LED chip. 12. The illuminating diode chip module of claim 8, further comprising: a carrier, wherein the illuminating diode chip is disposed on the carrier; and ©-translucent encapsulant, The light emitting diode chip, the phosphor layer and the brightness enhancing film are coated. 13. A light-emitting diode chip module, comprising: a carrier; a light-emitting diode chip disposed on the carrier and having a first light-emitting surface; a light-transmissive sealant covering the light a diode chip having a second light-emitting surface; and a brightness enhancement film disposed on the second light-emitting surface, wherein the second light-emitting surface is located between the brightness-increasing film and the first light-emitting surface, The brightness enhancing film has a first surface facing the light transmissive sealant and a second surface facing away from the light transmissive sealant, and has a plurality of polygonal pyramid portions, the polygonal pyramid portions are located on the first surface and/or Or the second surface and arranged in a polygonal array. The light-emitting diode chip module of claim 13, wherein the polygonal pyramid portion is located on the first surface, the top corners of the polygonal pyramid portions are directed to the light-transmissive sealant, and The second surface is a flat surface. 15. The group of light emitting diode chip molds 29 200937082 according to claim 13, wherein the polygonal pyramid portions are located on the second surface, and the apex angles of the polygonal pyramid portions are directed away from the light transmissive sealant. The direction, and the first surface is a plane. The illuminating diode chip module of claim 13, wherein the polygonal pyramids are located on the first surface and the second surface, and the plurality of pyramids located on the first surface The top corner points to the light transmissive sealant, and the apex angles of the polygonal pyramids on the second surface point away from the light transmissive sealant. The light-emitting diode chip module of claim 13, wherein the first light-emitting surface and the second light-emitting surface face substantially in the same direction. The light-emitting diode chip module of claim 13 further comprising a phosphor layer disposed on the first light-emitting surface, wherein the light-transmissive sealant further covers the phosphor layer. And the second light emitting surface is located between the brightness enhancing film and the phosphor layer. 19. A light source module, comprising: at least one light emitting element adapted to emit a light beam; ❹ a light guiding unit disposed on the light transmission path of the light beam and having a light incident surface and a light exiting surface; and a brightening a light film disposed on the light incident surface, wherein the light beam from the light emitting element sequentially penetrates the brightness enhancing film and the light incident surface into the light guiding unit, and is transmitted from the light emitting surface to the light guiding surface Outside the unit. The light source module of claim 19, wherein the brightness enhancing film has a first surface facing the light incident surface and a second surface facing away from the light incident surface, and the brightness enhancing film The plurality of polygonal pyramids are located on the first surface and/or the second surface and arranged in a polygonal array. The light source module of claim 20, wherein the apex angles of the polygonal pyramids are directed toward the light incident surface or directed away from the light incident surface. The light source module of claim 19, wherein the brightness enhancing film has a first surface facing the light incident surface and a second surface facing away from the light incident surface, and the brightening The film has a plurality of first strip-shaped protrusions on the first surface, the first strip-shaped protrusions are arranged along a first direction, and each of the first strip-shaped protrusions is along a The first direction extends in a substantially vertical second direction. The light source module of claim 22, wherein the brightness enhancing film further has a plurality of second strip-shaped protrusions on the second surface, the second strip-shaped protrusions along Arranging in a third direction, and each of the second strip-like protrusions extends along a fourth direction substantially perpendicular to the third direction, the angle between the fourth direction and the second direction being greater than the twist. The light source module of claim 23, wherein the fourth direction is substantially perpendicular to the second direction. The light source module of claim 19, wherein the brightness enhancing film has a first surface facing the light incident surface and a second surface facing away from the light incident surface, and the brightness enhancing film Having a plurality of second strip-shaped protrusions on the second surface, the second strip-like protrusions are arranged along a third direction and each of the second strip-shaped protrusions is along The third direction extends in a substantially vertical fourth direction. 31
TW097106517A 2008-02-25 2008-02-25 Light-emitting diode chip module and light source module TWI365330B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW097106517A TWI365330B (en) 2008-02-25 2008-02-25 Light-emitting diode chip module and light source module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW097106517A TWI365330B (en) 2008-02-25 2008-02-25 Light-emitting diode chip module and light source module

Publications (2)

Publication Number Publication Date
TW200937082A true TW200937082A (en) 2009-09-01
TWI365330B TWI365330B (en) 2012-06-01

Family

ID=44866968

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097106517A TWI365330B (en) 2008-02-25 2008-02-25 Light-emitting diode chip module and light source module

Country Status (1)

Country Link
TW (1) TWI365330B (en)

Also Published As

Publication number Publication date
TWI365330B (en) 2012-06-01

Similar Documents

Publication Publication Date Title
JP6283483B2 (en) LIGHT EMITTING ELEMENT AND LIGHTING SYSTEM HAVING THE SAME
JP5878305B2 (en) Light emitting device package and lighting system
JP5788539B2 (en) Light emitting element
JP2016127030A (en) Optical lens, light-emitting module and light unit with the same
KR102538448B1 (en) Light emitting module
JP2011119739A (en) Light-emitting apparatus, and method of manufacturing the same
KR20110094996A (en) Package of light emitting device and method for fabricating the same and lighting system including the same
KR101163861B1 (en) Light emitting device, electrode structure and light emitting device package having the same
JP6874288B2 (en) Light emitting device and backlight source
KR20140007209A (en) Light emitting device
JP6285573B2 (en) Light emitting element
JP5853441B2 (en) Light emitting device
TW200850046A (en) Back light module and light emitting diode package structure therefor
KR102425317B1 (en) Optical lens, light emitting module and light unit having thereof
KR20140145404A (en) Light emitting apparatus
KR20120030871A (en) Light emitting device package and lighting unit using the same
JP2017135380A (en) Light-emitting element package and light-emitting device including the same
TW200937082A (en) Light-emitting diode chip module and light source module
JP2011114342A (en) Light emitting element package
KR102053287B1 (en) Light emitting device and lighting system
KR102435569B1 (en) Optical lens, light emitting module and light unit having thereof
TWI566439B (en) Package structure and method for fabricating the same
KR102237105B1 (en) Light emitting device
KR102181458B1 (en) Light emitting device
KR101883342B1 (en) Light emitting device package