KR102425317B1 - Optical lens, light emitting module and light unit having thereof - Google Patents

Abstract

A lighting module according to an embodiment includes a circuit board; an optical lens disposed on the circuit board; and a light emitting device disposed between the circuit board and the optical lens, wherein the optical lens includes: a bottom surface on the circuit board; an incident face having a recess recessed upwardly from the bottom face; a spherical first light emitting surface that transmits or reflects the light incident on the incident surface; a second light exit surface emitting the incident light in a lateral direction, a portion of the light reflected from the second light exit surface travels to a bottom surface, and the circuit board includes the bottom surface around the recess. and an absorption layer absorbing the light passing therethrough, wherein the absorption layer is disposed in a region of the upper surface of the circuit board in which the luminous intensity of light traveling to the bottom surface is 80% or more of a peak value.

Description

Optical lens, lighting module, and light unit having the same

The present invention relates to an optical lens, a lighting module, and a light unit having the same.

A light emitting device, for example, a light emitting diode (Light Emitting Device), is a kind of semiconductor device that converts electrical energy into light, and has been spotlighted as a next-generation light source by replacing conventional fluorescent lamps and incandescent lamps.

Since light emitting diodes generate light using semiconductor elements, they consume very low power compared to incandescent lamps that generate light by heating tungsten, or fluorescent lamps that generate light by colliding ultraviolet rays generated through high-pressure discharge against phosphors. .

In addition, since the light emitting diode generates light by using the potential gap of the semiconductor device, it has a longer lifespan, faster response characteristics, and environment-friendly characteristics compared to a conventional light source.

Accordingly, many studies have been conducted to replace the existing light source with a light emitting diode, and the use of the light emitting diode as a light source for lighting devices such as various lamps, displays, electric signs, and street lamps used indoors and outdoors is increasing.

An embodiment provides a lighting module in which a layer for absorbing unnecessary light traveling to a bottom surface of an optical lens is disposed on a circuit board.

The embodiment provides a lighting module in which the supporting protrusion of the optical lens protrudes from the layer for absorbing unnecessary light traveling to the bottom surface of the optical lens on the circuit board.

The embodiment provides a lighting module in which a supporting protrusion of an optical lens and a hole for the supporting protrusion are disposed in a layer for absorbing unnecessary light traveling to the bottom surface of the optical lens on a circuit board.

The embodiment provides a lighting module in which a side protrusion of an optical lens disposed on a circuit board is disposed outside the side surface of the circuit board.

The embodiment provides a lighting module in which each side protrusion of a plurality of optical lenses disposed on a circuit board is disposed outside of at least one side or both sides of the circuit board.

The embodiment provides a lighting module in which cut surfaces of side protrusions of a plurality of optical lenses disposed on a circuit board are parallel to a side surface of the circuit board in a first axial direction.

The embodiment provides a lighting module in which each side protrusion of a plurality of optical lenses is disposed in a wider direction among intervals in which the plurality of optical lenses are arranged.

The embodiment provides a lighting module in which the distance between the optical lens on the first circuit board and the optical lens on the second circuit board is wider than the distance between the optical lenses on the first circuit board.

The embodiment provides a lighting module in which the direction of the side protrusion of the optical lens is orthogonal to the line segment connecting the two supporting protrusions adjacent to the side protrusion, or is disposed within 30 degrees from the intersecting axis.

The embodiment provides a lighting module in which the side protrusion of the optical lens protrudes outward than the emitting surface of the optical lens.

The embodiment provides an optical lens in which vertices of an incident surface and a first light exit surface are convex in the same direction, and a lighting module having the same.

The embodiment provides an optical lens and a lighting module having the same, wherein the apex of the incident surface is closer to the apex of the first light exit surface than the light source.

The embodiment provides an optical lens having a spherical first light emitting surface and an inclined aspherical second light emitting surface around an incident surface, and a lighting module having the same.

The embodiment provides an optical lens having a bottom surface that is inclined or curved around a light emitting device, and a lighting module having the same.

The embodiment provides an optical lens for changing an emission angle of light incident from a light emitting device emitting light on at least five surfaces, and a lighting module having the same.

The embodiment provides an optical lens and a lighting module having the same, in which an exit angle of light emitted to a region deviating from a beam angle of light is smaller than an incidence angle.

An optical lens according to an embodiment, a bottom surface; a recess convex from the bottom surface; an incident surface on which light is incident around the recess; a first light emitting surface emitting light incident on the incident surface and having a spherical surface; a second light emitting surface disposed on the outer lower periphery of the first light emitting surface and having an aspherical surface; and a plurality of support protrusions protruding from the bottom surface of the optical lens, wherein the plurality of support protrusions are disposed on a region of the bottom surface in which the luminous intensity of light propagating to the bottom surface is 80% or more of a peak value.

A lighting module according to an embodiment includes a circuit board; an optical lens disposed on the circuit board; and a light emitting device disposed between the circuit board and the optical lens, wherein the optical lens includes: a bottom surface on the circuit board; an incident face having a recess recessed upwardly from the bottom face; a spherical first light emitting surface that transmits or reflects the light incident on the incident surface; a second light emitting surface emitting the incident light in a lateral direction; and a plurality of support protrusions protruding from the bottom surface to an upper surface of the circuit board, a portion of the light reflected from the second light emitting surface travels to the bottom surface, and the plurality of support protrusions are formed on the bottom surface. It is arranged in a region in which the luminous intensity of light traveling to the bottom surface is 80% or more of the peak value among the regions.

The embodiment may improve the luminance distribution of the optical lens by controlling the light path emitted to the side of the light emitting device disposed under the optical lens.

The embodiment may reduce noise such as a hot spot caused by light extracted from an optical lens.

The embodiment may reduce optical interference between adjacent optical lenses.

The embodiment may reduce interference between optical lenses on different circuit boards.

The embodiment may improve the luminance distribution of the optical lens by controlling the light path emitted to the side of the light emitting device disposed under the optical lens.

The embodiment may reduce noise such as a hot spot caused by light extracted from an optical lens.

The embodiment may provide a wide gap between the light emitting elements by the optical lens, thereby reducing interference between the optical lenses.

The embodiment may reduce the number of light emitting devices disposed in the light unit.

Embodiments may improve the reliability of a lighting module having an optical lens.

Embodiments may improve images by minimizing interference between adjacent optical lenses.

The embodiment may improve the reliability of a light unit such as an optical lens.

Embodiments may improve the reliability of a lighting system having a lighting module.

1 is a plan view of a lighting module according to an embodiment.
FIG. 2 is a plan view of the optical lens of FIG. 1 .
3 is a plan view illustrating a circuit board and an optical lens of the lighting module of FIG. 1 .
FIG. 4 is a rear view of the optical lens of FIG. 1 .
FIG. 5 is a view showing another example of the support protrusion of the optical lens of FIG. 1 .
FIG. 6 is a view showing another example of the support protrusion of the optical lens of FIG. 1 .
7 is a plan view illustrating an upper surface of a circuit board according to an embodiment.
FIG. 8 is a cross-sectional view on the AA side of the lighting module of FIG. 1 .
FIG. 9 is a cross-sectional view on the BB side of the lighting module of FIG. 1 .
FIG. 10 is a partially enlarged view of the lighting module of FIG. 9 .
11 is a view showing an example for fixing the support protrusion of the optical lens to the circuit board in the lighting module of FIG.
12 is a side view of an optical lens according to an embodiment.
13 is a CC side cross-sectional view of the lighting module of FIG. 1 .
14 is a partially enlarged view of the optical lens of FIG. 13 .
15 is a side cross-sectional view illustrating a detailed configuration of the optical lens of FIG. 13 .
16 is a view showing an example of a lighting module in which optical lenses are arranged on a circuit board according to an embodiment.
17 is a view showing a light unit having a lighting module according to an embodiment.
18 is a view illustrating a light unit in which an optical sheet is disposed on the lighting module of FIG. 17 .
19 is a first example illustrating a detailed configuration of a light emitting device disposed on a circuit board according to an embodiment.
20 is a second example of a light emitting device disposed on a circuit board according to an embodiment.
21 is a diagram illustrating a third example of a light emitting device disposed on a circuit board according to an embodiment.
22 is a view showing the luminous intensity at a predetermined distance from the optical axis of the optical lens according to the embodiment.

Hereinafter, the embodiments will be clearly revealed through the accompanying drawings and the description of the embodiments. In the description of the embodiments, each layer (film), region, pattern or structure is “on” or “under/under” the substrate, each layer (film), region, pad or pattern. In the case of being described as being “formed on,” “on” and “under/under” both refer to “directly” or “indirectly” formed through another layer. include In addition, the criteria for the upper / upper or lower / lower of each layer will be described with reference to the drawings.

Hereinafter, an optical lens and a lighting module having the same according to an embodiment will be described with reference to the accompanying drawings.

1 is a plan view of a lighting module according to an embodiment, FIG. 2 is a plan view of the optical lens of FIG. 1 , FIG. 3 is a plan view illustrating a circuit board and an optical lens of the lighting module of FIG. 1 , and FIG. It is a rear view of an optical lens.

1 to 4 , the lighting module 301 includes a light emitting device 100 , an optical lens 300 disposed on the light emitting device 100 , and a circuit disposed under the light emitting device 100 . and a substrate 400 .

The light emitting device 100 may be disposed on the circuit board 400 and positioned between the optical lens 300 and the circuit board 400 . The light emitting device 100 is driven by receiving power from the circuit board 400 and emits light.

The light emitting device 100 may include an LED chip including a compound semiconductor, for example, at least one of a UV (ultraviolet) LED chip, a blue LED chip, a green LED chip, a white LED chip, and a red LED chip. The light emitting device 100 may include at least one or both of a group II-VI compound semiconductor and a group III-V compound semiconductor. The light emitting device 100 may emit at least one of blue, green, blue, UV, and white light. The light emitting device 100 may be defined as a light source.

The optical lens 300 may change the path of light emitted from the light emitting device 100 and then extract it to the outside.

The optical lens 300 may have different light emitting surfaces 330 and 335 . The different light exit surfaces 330 and 335 include, for example, a first light exit surface 330 that is an upper surface of the optical lens 300 and a second light exit surface 335 disposed on the outer periphery. The first light exit surface 330 includes a spherical surface, and the second light exit surface 335 includes a non-spherical surface in a side cross-section.

The optical lens 300 includes a recess 315 and an incident surface 310 around the recess 315 , and the recess 315 extends from the bottom surface 310 of the optical lens 300 . The circuit board 400 is convexly depressed in the opposite direction, and the incident surface 310 has a curved surface around the recess 315 . The recess 315 may have a hemispherical or semi-elliptical shape, and a detailed description thereof will be described later. The structure of the optical lens 300 will be described later in detail.

The optical lens 300 includes a plurality of support protrusions 350 disposed below. The support protrusion 350 protrudes downward from the bottom surface 310 of the optical lens 300 , that is, in the direction of the circuit board 400 . A plurality of the support protrusions 350 may be fixed on the circuit board 400 and prevent the optical lens 300 from being tilted. An insertion groove for inserting the support protrusion 350 may be disposed on the circuit board 400 . When the support protrusion 350 is inserted into the insertion groove of the support protrusion 350 on the circuit board 400 , the support protrusion 350 may be adhered to each other using an adhesive member (not shown).

The circuit board 400 may be arranged in a light unit such as a display device, a terminal, and a lighting device. The circuit board 400 may include a circuit layer electrically connected to the light emitting device 100 . The circuit board 400 may include at least one of a resin PCB, a metal core PCB (MCPCB, metal core PCB), and a flexible PCB (FPCB, flexible PCB), but is not limited thereto. A protective layer (not shown) is disposed on the circuit board 400 , and the protective layer may include a material that absorbs or reflects light reflected from the optical lens 300 .

1 and 2 , when viewed from the top view, the circuit board 400 has a first length in the first direction (X) longer than a second length (D13) in the second direction (Z). . The first length may be a horizontal length, and the second length D13 may be a vertical length or a width.

The second length D13 of the circuit board 400 may be less than or equal to the diameter D4 or the width of the optical lens 300 . For example, the second length D13 may be smaller than a diameter D4 or a width of the optical lens 300 . Accordingly, since the second length D13 of the circuit board 400 is reduced, it is possible to reduce the second length D13 of the circuit board 400, thereby reducing cost.

The first length of the circuit board 400 may be disposed to be at least twice the diameter or width of the optical lens 300 , for example, a length longer than the sum of the diameters or widths of four or more optical lenses 300 . can have In this case, the first length of the circuit board 400 may be longer than the second length D13 , for example, 4 times or more, but the present invention is not limited thereto.

1 and 7 , absorption layers 412 and 414 are disposed on the circuit board 400 . The absorption layers 412 and 414 include a material having a higher absorbance than a reflectance, for example, a black resist material. The absorption layers 412 and 414 may include first and second repair layers 412 and 414 spaced apart from each other, and the first and second absorption layers 412 and 414 are spaced apart from each other in the first axis X1 direction of the circuit board 400 . can be The first and second absorption layers 412 and 414 may be formed in a semicircular shape, but the present invention is not limited thereto. The first and second absorption layers 412 and 414 may be spaced apart from each other by the same first distance r1 based on the optical axis Y0.

The absorption layers 412 and 414 may be a protective material of the circuit board 400 or may be formed as a separate layer, but is not limited thereto.

In regions of the first and second absorption layers 412 and 414 , the support protrusions 350 : 51 , 52 , 53 and 54 may vertically overlap. A plurality of holes 416 through which the support protrusion 350 may be inserted may be provided on the upper surface of the circuit board 400 along regions of the first and second absorption layers 414 and 416 .

9 and 10 , the support protrusion 350 of the optical lens 300 may be inserted into the hole 416 disposed in the region of the absorption layer 412 and 414 .

11 , when the support protrusion 350 of the optical lens 300 is inserted into the hole 416 , the support protrusion 350 may be adhered around the support protrusion 350 with an adhesive 405 . The adhesive 405 may include a black resin adhesive material, for example, black epoxy. The adhesive 405 may absorb light, thereby suppressing unnecessary light reflection.

Meanwhile, the plurality of support protrusions 350 of the optical lens 300 may overlap the circuit board 400 in a vertical direction. The optical lens 300 may include a light-transmitting material. The optical lens 300 may include at least one of polycarbonate (PC), polymethyl methacrylate (PMMA), silicone or epoxy resin, or glass. The optical lens 300 may include a transparent material having a refractive index in the range of 1.4 to 1.7.

The optical lens 300 includes a side protrusion 360 protruding outwardly. The side protrusion 360 protrudes outward from the second light exit surface 335 of the optical lens 300 . The side protrusion 360 may protrude outside the area of the circuit board 400 . Accordingly, the side protrusion 360 may be disposed in an area that does not vertically overlap the circuit board 400 . The side protrusion 360 may protrude outward from any one of the first side 401 and the second side 402 of the circuit board 400 .

The side protrusion 360 is a portion in which an area for a gate is cut during injection, and may be defined as a gate part, a cut part, a protrusion, or a mark part, but is not limited thereto. One side protrusion 360 may be disposed on the optical lens 300 . The optical lens 300 may further include at least one protrusion protruding outward in addition to the side protrusion 360 , but is not limited thereto.

The side protrusion 360 of the optical lens 300 may be formed with a rough outer side surface. Here, the rough surface may have a surface roughness higher than that of the first light emitting surface 330 . The rough surface may have a transmittance lower than that of the first light emitting surface 330 . Such a rough surface may be a cut surface.

In the region of the side protrusion 360 , light distribution may appear non-uniform due to low transmittance and rough surface roughness, and it is difficult to control the light emission angle. Light emitted through the area of the side protrusion 360 may be irradiated to an adjacent optical lens. That is, when the area of the side protrusion 360 is arranged in the first direction (X) or vertically overlapping with the circuit board 400 , the light emitted through the side protrusion 360 is adjacent to the optical There is a problem in that the lens 300 may be irradiated to cause an optical interference phenomenon, and may be reflected by the circuit board 400 to affect the light uniformity.

In an embodiment, the side protrusion 360 of the optical lens 300 may be orthogonal to the optical axis Y0 and may be disposed in the direction of the second axis Z1 rather than the direction in which the optical lenses 300 are arranged. The second axis (Z1) direction may be disposed perpendicular to the first axis (X1) direction on the same plane. The side protrusion 360 may protrude from the second light emitting surface 335 . A surface horizontal to the outer side surface 361 of the side protrusion 360 may be perpendicular to the second axis (Z) direction. As shown in FIG. 3 , a straight line X2 horizontal to the outer side 361 of the side protrusion 360 may be a direction parallel to the direction of the first axis X1 . Here, when the first and second axes X1 and Z1 are disposed on the same horizontal plane, they may pass through the optical axis Y0 and be orthogonal to each other.

Referring to FIG. 2 , the plurality of support protrusions 350 includes first and second support protrusions 51 and 52 adjacent to the side protrusion 360 , and an incident surface 320 based on the side protrusion 360 . ) may include third and fourth support protrusions 53 and 54 spaced apart from each other.

An arbitrary point, for example, a center point, of the side protrusion 360 may be disposed so that a distance D15 from the first and second support protrusions 51 and 52 is closer than a distance D14 from the optical axis Y0. . Since the distance D15 > D14 is arranged, the first to fourth support protrusions 51 , 52 , 53 , and 54 may stably support the optical lens 300 around the incident surface 320 . The D14 may be a radius when the optical lens 300 has a circular shape. Here, the first distance r1 may be disposed within the range of 0.82 to 0.85 of the radius D14 of the optical lens 300 or the radius of the bottom surface 310 .

With respect to the optical axis Y0, the angle R2 between the second axis Z1 passing through the center point of the side protrusion 360 and the first support protrusion 52 may be an obtuse angle, for example, more than 45 degrees. can be

Here, in the plurality of support protrusions 350, the angle R1 between the first and second support protrusions 51 and 52 adjacent to the side protrusion 360 with respect to the optical axis Y0 may be greater than 90 degrees. have. In this case, the plurality of support protrusions 350 may be disposed closer to the first axis X1 than to the second axis Z1 . The plurality of support protrusions 350 are disposed closer to the first axis X1 to stably support the optical lens 300 and have a length D13 of the circuit board 400 in the second axis Z1 direction. can reduce

Referring to FIG. 3 , the first and second finger protrusions 51 and 52 are the distance from the horizontal straight line X5 passing through the 1/3 point P21 of the radius D14 of the optical lens 300 ( D21) can be further spaced apart.

The positions of the first and second side surfaces 401 and 402 of the circuit board 400 are disposed outside the horizontal straight line X3 passing through the plurality of support protrusions 350 , and the outer circumference of the optical lens 300 . For example, it may be disposed inside the horizontal straight line X4 passing through the second light emitting surface 335 . The first side 401 of the circuit board 400 may be spaced apart from the straight line X4 by a predetermined distance D22.

Referring to FIG. 4 , the plurality of support protrusions 350 include an optical axis Y0 of the optical lens 300 and a second axis Z1 passing through the center of the side protrusion 360 and the second axis Z1 . ) may be respectively disposed in the first to fourth quadrants Q1, Q2, Q3, and Q4 divided from the first axis X1 perpendicular to the axis X1. In addition, the plurality of support protrusions 350 :51 , 52 , 53 , and 54 may be disposed closer to the line of the first axis X1 than the second axis Z1 .

The center of the plurality of support protrusions 350 and the optical axis Y0 may be spaced apart by the same first distance r1, but is not limited thereto. At least one of the plurality of support protrusions 350 may have a different distance from the rest of the optical axis Y0, but is not limited thereto.

The distance between the plurality of support protrusions 350:51, 52, 53, 54 may be greater than the distance D31 in the direction of the first axis X1 is greater than the distance D32 in the direction of the second axis Z1. have. This may vary depending on the width, which is the second length, of the circuit board 400 .

At least four of the plurality of support protrusions 350:51, 52, 53, and 54 may be arranged in a polygonal shape, for example, a rectangular shape, that is, a rectangular shape. As another example, four or more of the plurality of support protrusions 350 :51 , 52 , 53 , 54 may be disposed, for example, five or six or more, but is not limited thereto.

In the embodiment, the plurality of support protrusions 350:51, 52, 53, 54 are spaced apart from the area of the side protrusion 360 and the second axis Z1 so as not to overlap, and are disposed closer to the first axis X1 direction. By doing so, it is possible to reduce the influence on the surface of the second light exit surface 330 by the plurality of support protrusions 350 :51 , 52 , 53 and 54 during injection molding of the optical lens 300 .

Referring to FIG. 5 , three supporting protrusions 350 ( 55 , 56 , 57 ) of the optical lens 300 may be arranged in a triangular shape. The center of the support protrusions 350 may have the same first distance r1 from the optical axis Y0 or may be different from each other, but is not limited thereto.

Referring to FIG. 6 , at least one of the plurality of support protrusions 350 : 58 , 59 and 60 of the optical lens 300 , for example, any one of the support protrusions 58 , is compared to the other support protrusions 59 and 60 . It can have a large width or area. In this case, the support protrusion 58 having a relatively long distance among the plurality of support protrusions 350 may be smaller than the support protrusions 59 and 60 having a relatively short distance. This may allow the distance from the optical axis Y0 to be proportional to the difference in the floor area of the support protrusions 58 , 59 , and 60 .

FIG. 8 is a cross-sectional view taken along side A-A of the lighting module of FIG. 1 .

As shown in FIG. 8 , a portion L5 of the light incident on the first light emitting surface 330 among the light emitted from the light emitting device 100 is transmitted, but the other light L6 is reflected in the direction of the bottom surface 310 . . At this time, as a result of measuring the luminous intensity of the light L6 reflected in the direction of the reflective surface 310 , a peak value was detected in the region having the first distance r1 from the optical axis Y0 as shown in FIG. 22 . In this case, the light L6 traveling to the bottom surface 310 passes through the bottom surface 310 or is reflected by the bottom surface 310 to interfere with other lights.

In the embodiment, by arranging the absorption layers 412 and 414 of the circuit board 400 in a region corresponding to a peak value or a range of 80% or more of the peak value among the luminous intensity of the light L6 traveling to the bottom surface 310, unnecessary light is removed can absorb. When these unnecessary lights travel to the outside, a mura defect may occur.

In the embodiment, the support protrusion 350 for supporting the optical lens 300 may be disposed in an area corresponding to a peak value or a range of 80% or more of the peak value among the luminous intensity of the light L6 traveling to the bottom surface 310. have. When the support protrusion 350 is disposed in the region of the absorption layers 412 and 414 or an adhesive of an absorption material is applied, it is possible to absorb the incident light L6 to suppress mura defects.

As another example, a light absorbing material may be applied to the region of the bottom surface 310 of the optical lens 300 , but the present invention is not limited thereto.

The first distance r1 may include a range of 6 mm to 6.5 mm, for example, a range of 6.2 mm to 6.4 mm. By arranging the support protrusion 350 at a first distance r1 from the optical axis Y0, from the first distance r1 and the surrounding area (r1±10%) to the bottom area where the support protrusion 350 is disposed. It is possible to reduce the interference caused by the traveling light. The light traveling to the region out of the first distance r1 does not significantly affect the light distribution.

Accordingly, the light emitted through the first and second light exit surfaces 330 and 335 of the optical lens 300 is effectively controlled, and the light L6 traveling to another area, for example, the bottom surface 310, is distributed in a different light. By suppressing the interference, it is possible to improve the uniform distribution of light.

As another example, when irradiating light from the outside of the optical lens to the first light emitting surface, the luminous intensity of the peak value at the first distance r1 as shown in FIG. 22 may be detected. In the embodiment, the support protrusion 350 and the absorbing layers 412 and 414 are located in the region facing the region with the maximum amount of light among regions of the bottom surface 310 that can be reflected or refracted by the curved surface characteristic of the first light emitting surface 330 . and at least one or both of the adhesives ( 405 in FIG. 9 ) may be disposed to suppress the mura problem and prevent interference to uniform light distribution.

9 is a cross-sectional view on the B-B side of the illumination module of FIG. 1 , and is a view showing paths of light emitted to an incident surface and an output surface of an optical lens, FIG. 12 is a side view of an optical lens according to an embodiment, and FIG. 13 is FIG. 1 C-C side cross-sectional view of the illumination module, Figure 14 is a partial enlarged view of the optical lens of Figure 13, Figure 15 is a side cross-sectional view showing the detailed configuration of the optical lens of Figure 13.

9 and 12 to 15 , the optical lens 300 will be described in detail.

12 to 15 , the optical lens 300 is formed around a bottom surface 310 , a recess 315 convex above the bottom surface 310 , and the recess 315 . The incident surface 320 , the bottom surface 310 , and the first light exit surface 330 disposed on the opposite side of the incidence surface 320 , and the first light exit surface 330 disposed around the lower portion of the first light exit surface 330 . 2 light exit surface 335, and the side projection 360 described above.

The recess 315 is recessed in the optical axis Y0 direction from the center region of the bottom surface 310 . The recess 315 may have a greater depth as it approaches the center region or the optical axis Y0.

A direction perpendicular to the upper surface of the light emitting device 100 may be referred to as an optical axis Y0 direction. The direction of the optical axis Y0 may be a direction orthogonal to the upper surface of the circuit board 400 . The direction of the first axis X0 perpendicular to the optical axis Y0 may be a direction perpendicular to the optical axis Y0 from the light emitting device 100 .

The width D1 of the recess 315 may gradually become narrower as it approaches the vertices 21 and 31 . The recess 315 may be closer to the first light emitting surface 330 as it rises upward.

The cross-sectional shape of the side of the recess 315 may include a hemispherical shape or a semi-elliptical shape, and the lower shape of the surface may include a circular shape or a polygonal shape. The incident surface 320 is disposed around the convex recess 315 upward from the center region of the bottom surface 310 . The incident surface 320 may include a curved surface.

The incident surface 320 may be formed of a rotating body having a Bezier curve. The curve of the incident surface 320 may be implemented as a spline, for example, a cubic, B-spline, or T-spline. The curve of the incident surface 320 may be implemented as a Bezier curve.

The incident surface 320 is a surface of the recess 315 and may be disposed outside the upper surface S1 and the side surface S2 of the light emitting device 100 .

The bottom surface 310 of the optical lens 300 may include a flat surface, a curved surface, or a curved surface and a flat surface. The bottom surface 310 may provide an inclined surface or a curved surface with respect to the top surface of the circuit board 400 . The bottom surface 310 of the optical lens 300 may be provided as an inclined surface or a curved surface based on a horizontal straight line X0 on the upper surface of the circuit board 400 . 80% or more of the bottom surface 310 may be inclined or curved with respect to the top surface of the circuit board 400 . The bottom surface 310 may include a total reflection surface.

The bottom surface 310 of the optical lens 300 includes a first edge 23 and a second edge 25 . The first edge 23 is a boundary point between the incident surface 320 and the bottom surface 310 , and may be the bottom of the optical lens 300 . The first edge 23 may be the lowest point among the areas of the bottom surface 310 . The position of the first edge 23 may be lower than that of the second edge 25 based on a horizontal line. The first edge 23 may be a lower circumference of the incident surface 320 .

The second edge 25 may be disposed on the lower periphery of the second light emitting surface 335 or at the outermost portion of the bottom surface 310 . The second edge 25 may be a boundary point between the bottom surface 310 and the second light exit surface 335 .

The first edge 23 and the second edge 25 may be both ends of the bottom surface 310 . The bottom-view shape of the first edge 23 may be a circular shape or an elliptical shape, and the second edge 25 may have a bottom-view shape of a circular shape or an oval shape.

The optical lens 300 receives the light emitted from the light emitting device 100 to the incident surface 320 and emits it to the first and second light output surfaces 330 and 335 . Some light incident from the incident surface 320 may be irradiated to the bottom surface 310 through a predetermined path.

When the light emitted from the light emitting device 100 has a beam distribution of a predetermined angle and is incident on the incident surface 320 , the optical lens 300 diffuses the light through the first and second light output surfaces 330 and 335 . can

The incident surface 320 of the optical lens 300 may be disposed to face the upper surface S1 and the plurality of side surfaces S2 of the light emitting device 100 . The light emitted from the side surface 320 of the light emitting device 100 may be irradiated to the incident surface 320 . Accordingly, the light emitted to the side surface S2 of the light emitting device 100 may be incident on the incident surface 320 without leakage.

The light emitting device 100 emits light through an upper surface S1 and a plurality of side surfaces S2, and has, for example, five or more light emitting surfaces. The plurality of side surfaces S2 of the light emitting device 100 has a structure including at least four side surfaces, and may be a light emitting surface.

Since the light emitting device 100 provides five or more light emitting surfaces, the distribution of the beam angle may be widened by the light emitted through the side surface S2 . The light beam distribution angle distribution of the light emitting device 100 may be 140 degrees or more, for example, 142 degrees or more. The full width at half maximum of the directional angle distribution of the light emitting device 100 may be 70 degrees or more, for example, 71 degrees or more. The half width represents a width having a luminous intensity of 1/2 of the maximum luminous intensity of the beam angle. By providing a wide distribution of the beam angle of the light emitting device 100 , there is an effect that light diffusion using the optical lens 300 is easier.

The top surface of the circuit board 400 may be disposed closer to the first edge 23 than the second edge 25 of the bottom surface 310 of the optical lens 300 . The first edge 23 of the bottom surface 310 may be in contact with the top surface of the circuit board 400 , and the second edge 25 is at a maximum distance T0 from the top surface of the circuit board 400 . can be spaced apart. The second edge 25 may be disposed at a lower position than the active layer in the light emitting device 100 , thereby preventing light loss.

The first and second light emitting surfaces 330 and 335 of the optical lens 300 refract and emit the incident light. The second light exit surface 335 refracts the extracted light after refraction with respect to the optical axis Y0 to be smaller than the angle of the incident light before refraction. Accordingly, it is possible to provide a long optical interference distance between adjacent optical lenses 300, and some light emitted through the second light exit surface 335 and the light emitted to the first light exit surface 330 are separated from the optical lens ( 300) may be mixed with each other.

The first light emitting surface 330 of the optical lens 300 may be formed as a spherical surface through which light is emitted to the entire area. The center region of the first light emitting surface 330 may be a vertex 31 or a peak, and includes a curved shape continuously connected from the apex 31 . The first light emitting surface 330 may reflect or refract incident light to be emitted to the outside. In the first light exit surface 330 , an emission angle after refraction of the light emitted to the first light exit surface 330 with respect to the optical axis Y0 may be greater than an incidence angle before refraction.

The monotony of the first light emitting surface 330 of the optical lens 300 increases according to the distance from the optical axis Y0 within the half value of the light beam distribution, and the second light emitting surface 335 is the It includes a region that deviates from the half-maximum angle of the directional angle distribution, and the monotony decreases according to a distance with respect to the optical axis Y0.

The first light emitting surface 330 may be formed of a rotating body having a Bezier curve. The curve of the first light emitting surface 330 may be implemented as a spline, for example, a cubic, B-spline, or T-spline. The curve of the first light emitting surface 330 may be implemented as a Bezier curve. When the side protrusion 360 is excluded, the optical lens 300 may be provided in a rotationally symmetrical shape with respect to the optical axis Y0.

The center region of the first light emitting surface 330 is adjacent to the optical axis Y0 and may be a curved upwardly convex surface or a flat surface. A region between the center region of the first light emitting surface 330 and the second light emitting surface 335 may be provided in a convex curved shape.

The incident surface 320 and the first light exit surface 330 may have positive radii of curvature. The center area and the peripheral area of the first light emitting surface 330 may not have a negative radius of curvature but may have different positive radii of curvature. The center area of the first light emitting surface 330 may include an area in which a radius of curvature is 0.

A radius of curvature of the incident surface 320 may be smaller than a radius of curvature of the first light exit surface 330 . Alternatively, the inclination of the incident surface 320 may be greater than that of the first light emitting surface 330 .

The second light exit surface 335 is disposed around the lower portion of the first light exit surface 330 to refract and emit the incident light. The second light emitting surface 335 has an aspherical shape or a flat surface. The second light exit surface 335 may be, for example, a surface perpendicular to the top surface of the circuit board 400 or an inclined surface. When the second light emitting surface 335 is formed as an inclined surface, there is an effect of easy separation during injection molding.

The second light emitting surface 335 may be disposed on an outer circumference of the optical lens 300 . The second light exit surface 335 may extend from the lower periphery of the first light exit surface 330 to the bottom surface 310 in a flat or aspherical shape. The second light exit surface 335 may include a third edge 35 adjacent to the first light exit surface 330 . The second edge 25 may be a lower edge of the second light exit surface 335 , and the third edge 35 may be an upper edge of the second light exit surface 335 or the first and second light exit surfaces. It may be a boundary point between (330,335).

The second light emitting surface 335 receives and refracts some light emitted to the side surface S2 of the light emitting device 100 to be extracted. In this case, in the second light exit surface 335 , an exit angle of the emitted light with respect to the optical axis Y0 may be smaller than an incidence angle before refraction. Accordingly, it is possible to provide a long optical interference distance between adjacent optical lenses 300 .

Referring to FIG. 15 , the optical lens 300 may have a width or a diameter D4 wider than a thickness D3 . The width or diameter D4 may be 2.5 times or more, for example, 3 times or more of the thickness D3. The width or diameter D4 of the optical lens 300 may be 15 mm or more. Since the width or diameter D4 of the optical lens 300 is wider than the thickness D3 in the above range, it is possible to provide a uniform luminance distribution over the entire area of the light unit, for example, the backlight unit, and also the light unit can reduce the thickness of

Here, the lower width D1 of the incident surface 320 of the optical lens 300 may be the lower width of the recess 315 and may be disposed wider than the width W1 of the light emitting device 100 . . The incident surface 320 and the recess 315 have a size through which the light emitted from the light emitting device 100 can be easily incident.

A depth D2 of the recess 315 may be equal to or deeper than a lower width D1 of the incident surface 320 . The depth D2 of the recess 315 may have a depth of 75% or more, for example, 80% or more of the thickness D3 of the optical lens 300 . The depth D2 of the recess 315 may be 80% or more of the distance between the apex 31 of the first light exit surface 330 and the bottom surface 310 or the first edge 23 . Since the depth D2 of the recess 315 is deep, even if the center area of the first light exit surface 330 does not have a total reflection surface or a negative curvature, the apex 21 of the incidence surface 320 is The light may be diffused in the lateral direction even in an adjacent area. The depth D2 of the recess 315 is the depth of the apex 21 of the incident surface 320 , and the depth of the apex 21 of the incident surface 320 is deep, so that the apex 21 and its The light incident on the peripheral area may be laterally refracted.

A ratio (D1:W1) of the lower width D1 of the incident surface 320 to the width W1 of the light emitting device 100 may be in a range of 1.8:1 to 3.0:1. When the lower width D1 of the incident surface 320 is less than three times the width W1 of the light emitting element 100, the light emitted from the light emitting element 100 hits the incident surface 320 can be entered effectively.

The minimum distance D5 between the recess 315 and the first light exit surface 330 is between the apex 21 of the recess 315 and the apex 31 of the first light exit surface 330 . may be an interval of The distance D5 may be, for example, 1.5 mm or less, for example, may be in the range of 0.6 mm to 1 mm. When the distance D5 between the apex 21 of the recess 315 and the apex 31 of the first light emitting surface 330 is greater than 1.5 mm, it proceeds to the center region of the first light emitting surface 330 . The amount of light used may increase, and a hot spot phenomenon may occur. When the distance D5 between the apex 21 of the recess 315 and the second light exit surface 31 is less than 0.6 mm, there is a problem in that the center-side rigidity of the optical lens 300 is weakened. By disposing the distance D5 between the recess 315 and the first light exit surface 330 in the above range, even if the center region of the second light exit surface 335 does not have a total reflection surface or a negative curvature , it is possible to spread the light path in the horizontal direction to the periphery of the center region. This means that as the apex 21 of the recess 35 is adjacent to the convex apex 31 of the first light emitting surface 330, the lateral direction of the first light emitting surface 330 through the incident surface 320 is increased. The amount of propagating light may be increased. Accordingly, it is possible to increase the amount of light diffused in the lateral direction of the optical lens 300 .

The apex 21 of the recess 315 is a vertex 31 that is the center of the first light emitting surface 330 rather than a straight line extending horizontally from the third edge 35 of the second light emitting surface 335 . may be placed closer to the

In the optical lens 300 , the first light emitting surface 330 may have different radii of curvature. The incident surface 320 may have different radii of curvature. The center of the circles having respective radii of curvature of the first light emitting surface 330 and the incident surface 320 may be disposed below a horizontal straight line passing through the vertex 21 of the incident surface 320, The optical lens 300 may be disposed in an overlapping area in a vertical direction.

Referring to FIG. 9 , looking at the optical path of the optical lens 300 , the first light L1 incident on the incident surface 320 of the optical lens 300 among the light emitted from the light emitting device 100 is It may be refracted and emitted to the first light emitting surface 330 . Also, among the light emitted from the light emitting device 100 , the second light L2 incident on the incident surface 320 may be emitted to the second light output surface 335 .

Here, an incident angle of the first light L1 incident on the incident surface 320 with respect to the optical axis Y0 is defined as a first angle θ1, and the first light is emitted based on the optical axis Y0. An emission angle of the first light L1 emitted to the surface 330 may be defined as a second angle θ2 . An incident angle of the second light L2 incident on the incident surface 320 with respect to the optical axis Y0 is defined as a third angle θ3, and the second light exit surface ( 335), an emission angle of the second light L2 may be defined as a fourth angle θ4. The second light L2 may be light emitted from a side surface of the light emitting device 100 .

The second angle θ2 is greater than the first angle θ2. The second angle θ2 gradually increases as the first angle θ1 gradually increases, and gradually decreases as the first angle θ1 decreases as the first angle θ1 decreases. In addition, the first and second angles θ1 and θ2 satisfy the condition of θ2>θ1 or 1<(θ2/θ1). The second angle θ2 of the first light emitting surface 330 is an emission angle after refraction, and may be greater than an incidence angle before refraction. Accordingly, the first light emitting surface 330 refracts the first light L1 that travels to the first light emitting surface 330 among the light incident through the incident surface 320, so that the first light ( L1) may be diffused in the lateral direction of the optical lens 300 .

The fourth angle θ4 may be smaller than the third angle θ3 . As the third angle θ3 increases, the fourth angle θ4 increases, and as the third angle θ3 decreases, the fourth angle θ4 decreases. In addition, the third and fourth angles θ3 and θ4 satisfy the condition of θ4<θ3 or 1>(θ4/θ3). The fourth angle θ4 of the second light exit surface 335 is an emission angle after refraction, and may be smaller than an incidence angle before refraction. Light emitted through the side surface S2 of the light emitting device 100 or light having a deviation from a light beam angle may be incident on the second light exit surface 335 . Accordingly, the second light emitting surface 335 refracts the light emitted through the side surface S2 of the light emitting device 100 and the light outside the light directivity angle distribution so as to proceed within the half value region of the luminance distribution. can Light loss may be reduced by the second light emitting surface 335 .

The third edge 35 of the second light emitting surface 335 is disposed above the position of the half-value, for example, the fourth angle θ4 of the distribution angle of the light emitting device 100 with respect to the optical axis Y0. can be For example, the angle between the optical axis Y0 and the straight line connecting the reference point P0 to the third edge 35 may be smaller than the half-maximum angle of the light emitting device 100 . Here, the half-maximum angle represents an angle at which the light output emitted from the light emitting device 100 becomes 50% or 1/2 of the peak value with respect to the optical axis.

Among the light emitted from the light emitting device 100 , the light irradiated to the region adjacent to the half-value angle may be controlled to be emitted through the second light emitting surface 335 . In this case, the second light L2 emitted to the second light exit surface 335 may be mixed with lights traveling to the first light exit surface 330 .

Here, the reference point P0 may be an intersection of the optical axis Y0 and the light emitting device 100 . The reference point P0 may be disposed at a position lower than the upper surface S1 of the light emitting device 100 . The reference point P0 of the light emitting device 100 is a point at which the center of the upper surface S1 and the centers of the plurality of side surfaces S2 intersect, or the center of the upper surface S1 and the lower center of each side surface S2 intersect. It can be a point to be The reference point P0 may be an intersection point at which the optical axis Y0 and the light emitted from the light emitting device 100 intersect. The reference point P0 may be disposed on the same horizontal line as the bottom point of the optical lens 300 or disposed at a higher position.

Of the light emitted from the light emitting device 100 , the light L3 incident on the incident surface 320 is reflected by the bottom surface 310 of the optical lens 300 and is emitted to the second light exit surface 335 . or may be reflected from the second light exit surface 335 . The light reflected by the second light emitting surface 335 may be re-incident to the incident surface 320 , refracted, and then emitted to the first light emitting surface 330 .

Among the light emitted to the side surface S2 of the light emitting device 100 , the light emitted through the second light exit surface 335 is emitted at an emission angle smaller than the incident angle, and thus different circuit boards as shown in FIGS. 17 and 18 . The distance G2 between the optical lenses 100 disposed on the 400 , that is, the optical interference distance may be increased. In addition, since the luminance distribution by the optical lens 300 is improved, the distance H1 between the circuit board 400 and the optical sheet 514 may be reduced. Also, the number of optical lenses 300 disposed in the backlight unit may be reduced.

In the optical lens 300 , the position of the first edge 23 of the bottom surface 310 may be lower than or equal to the reference point P0 of the light emitting device 300 , and the second edge 25 . The position of may be disposed higher than the upper surface S1 of the light emitting device 100, but is not limited thereto. Accordingly, the bottom surface 310 totally reflects the light emitted through the side surface S2 of the light emitting device 100 incident from the incident surface 320 .

When the depth (D2 of FIG. 16 ) of the recess 315 is low, the center region of the first light emitting surface 330 overlapping the recess 315 in the vertical direction is treated as a flat surface or a convex surface. A hot spot may be generated by the light transmitted to the center region of the first light emitting surface 330 . In the embodiment, the depth D2 of the recess 315 is disposed adjacent to the convex center region of the first light exit surface 330 to measure the light by the incidence surface 320 of the recess 315 . direction can be deflected. Accordingly, a hot spot caused by the light emitted by the first light emitting surface 330 of the optical lens 300 may be reduced.

As shown in FIG. 9 , between the line segment connecting the upper surface of the circuit board 100 and the bottom surface 310 of the optical lens 300 with respect to the optical axis Y0 or a line connecting both edges 23 and 25 , as shown in FIG. The angle θ5 may be within 5 degrees, for example, in the range of 0.5 degrees to 4 degrees. As the bottom surface 310 is disposed as a surface or a curved surface having an inclined angle θ5 , the light incident through the side surface S2 of the light emitting device 100 is reflected through the second light exit surface 335 . transmit or reflect. The emission angle of the second light exit surface 335 is smaller than the incidence angle incident through the reflection surface 310 , thereby reducing interference between the optical lenses 300 disposed on other adjacent circuit boards. Accordingly, the amount of light emitted through the second light emitting surface 335 of the optical lens 300 may be improved.

In addition, the linear distance between the second edge 25 and the third edge 35 on the bottom surface 310 may be smaller than the depth D2 of the recess 315 . That is, by disposing the recess 315 deep (D2 in FIG. 16 ), the lateral diffusion of light may be improved.

As an embodiment, the optical lens 300 may have a concave-convex surface on the second light exit surface 335 . The uneven surface may be formed as a haze surface having a rough surface. The uneven surface may be a surface on which scattering particles are formed.

The bottom surface 310 of the optical lens 300 may have an uneven surface. The uneven surface may be formed as a haze surface having a rough surface, or scattering particles may be formed.

When concave-convex surfaces are formed on the second light exit surface 335 and the bottom surface 310 of the optical lens 300 , the light incident on the incidence surface 320 may be totally reflected by the bottom surface 310 . have. The second light emitting surface 335 may reflect some incident light, and the reflected partial light may be re-entered and refracted by the incident surface 320 or may be directly incident on the first light emitting surface 330 . have. Here, the amount of light incident on the incident surface 320 among the light reflected by the second light exit surface 335 may be greater than the amount of light incident on the first light exit surface 330 . The light re-incident to the incident surface 320 may be refracted and emitted through the first light exit surface 330 or the second light exit surface 335 .

Meanwhile, the side protrusion 360 of the optical lens 300 may be formed as a rough surface. Here, the rough surface may have a higher surface roughness than that of the first light emitting surface. The rough surface may have a transmittance lower than that of the first light emitting surface. Such a rough surface may be a cut surface.

The side protrusion 360 of the optical lens 300 protrudes from the second light exit surface 350 as shown in FIGS. 13 and 14 . The light incident to the area of the side protrusion 360 is reflected from the side protrusion 360 and is emitted through the outer side surface 361 . Since the optical lens 300 of the circuit board 400 reflects light in the direction of the second axis Z1 in which the side protrusions 360 are arranged with different circuit boards 400 , the same circuit board 400 . It is possible to prevent optical interference between the optical lenses 300 inside. In addition, by making the distance between the different circuit boards 400 more spaced apart than the distance between the optical lenses 300 in the same circuit board 400 , the optical interference between the optical lenses 300 on the different circuit boards 400 is reduced. can give

The side protrusion 360 may protrude 300 μm, for example, 500 μm or more from the second light exit surface 335 as a minimum thickness T1 . By disposing the side protrusions 360 in a direction in which the distance between the optical lenses 300 is far away, optical interference between the optical lenses 300 may be reduced.

The height T2 of the side protrusion 360 may be equal to or smaller than the thickness of the second light exit surface 335 ( FIG. 15 D7 ), for example, may be 1 mm or more. The height T2 of the side protrusion 360 may vary depending on the size of the optical lens 300 . The height T2 of the side protrusion 360 may be at least 1/3 or more compared to the thickness (D3 of FIG. 15 ) of the optical lens 300 .

The width (T3 in FIG. 2 ) of the side protrusion 360 may be greater than the height T2 and the thickness T1 , and may be, for example, twice as large as the T1 or T2. The width T3 of the side protrusion 360 may be at least 1/3 or greater than the width or diameter D4 of the optical lens 300 .

Referring to FIG. 16 , a plurality of optical lenses 300 and 300A may be disposed on the circuit board 400 . The plurality of optical lenses 300 and 300A may be arranged in the direction of the first axis X1 and may be spaced apart from each other by a predetermined distance G1.

The side protrusions 360 of each of the optical lenses 300 and 300A may protrude in the direction of the second axis Z1 , for example, in the direction of the first side 401 of the circuit board 400 . The side protrusions 360 of the plurality of optical lenses 300 and 300A may protrude more outward than the first side 401 of the circuit board 400 . The side protrusions 360 of the plurality of optical lenses 300 and 300A may protrude in the same direction.

As another example, the side protrusions 360 of the plurality of optical lenses 300 and 300A may protrude in directions (+Z, -Z) opposite to each other with respect to the first axis (X1) direction or with respect to the optical axis (Y0). can The side protrusions 360 of the plurality of optical lenses 300 and 300A may protrude outward than the first and second side surfaces 401 and 402 of the circuit board 400 .

As another example, the side protrusions 360 of the plurality of optical lenses 300 and 300A may protrude in the same direction with respect to the first axis X1 or the optical axis Y0. For example, the side protrusions 360 of the plurality of optical lenses 300 and 300A may protrude toward the second side 402 of the first and second sides 401 and 402 of the circuit board 400 . The side protrusions 360 of the plurality of optical lenses 300 and 300A may protrude outward than the second side surfaces 402 of the circuit board 400 .

The side protrusions 360 of each of the optical lenses 300 and 300A of the embodiment may be arranged in a random form in a positive or a direction of the second axis Z1 perpendicular to the first axis X1, and the circuit board 400 ), for example, may protrude outward than the first or second side surfaces 401 and 402 .

17 and 18 are views illustrating a light unit having a lighting module according to an embodiment.

17 and 18 , the light unit includes a bottom cover 512 , a plurality of circuit boards 400 as a lighting module 301 in the bottom cover 512 , a light emitting device 100 , and the plurality of circuit boards. and an optical lens 300 disposed on 400 . The plurality of circuit boards 400 may be arranged in the bottom cover 512 .

The bottom cover 512 may include a metal or a thermally conductive resin material for heat dissipation. The bottom cover 512 may include a accommodating part, and a side cover may be provided around the accommodating part.

The circuit board 400 may include a circuit layer electrically connected to the light emitting device 100 . The circuit board 400 may include at least one of a resin PCB, a metal core PCB (MCPCB, metal core PCB), and a flexible PCB (FPCB, flexible PCB), but is not limited thereto. A reflective sheet may be disposed on the circuit board according to the embodiment. The reflective sheet may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto.

An optical sheet 514 may be disposed on the bottom cover 512, and the optical sheet 514 includes at least one of a prism sheet for collecting dispersed light, a luminance enhancing sheet, and a diffusion sheet for re-diffusing the light. may include A light guide layer (not shown) may be disposed in a region between the optical sheet 514 and the lighting module, but is not limited thereto.

The interval G1 between the optical lenses 300 disposed in each circuit board 400 may be arranged to be narrower than the interval G2 between the optical lenses 300 disposed in different circuit boards 400 . The gap G1 may be arranged in a range of 6 to 10 times, for example, 6 to 9 times the width or diameter D4 of the optical lens 300 . The gap G2 may be arranged in a range of 9 to 11 times, for example, 9 to 11 times the width or diameter D4 of the optical lens 300 . Here, the width D4 of the optical lens 300 may be 15 mm or more. The optical interference distance between the optical lenses 300 , that is, the intervals G1 and G2 may be spaced apart by at least 6 times the width or diameter D4 of the optical lens 300 .

When the width or diameter D4 of the optical lens 300 is narrower than the above range, the number of optical lenses 300 in the light unit may be increased, and a dark portion may be generated in a region between the optical lenses 300 . have. When the width or diameter D4 of the optical lens 300 is wider than the above range, the number of optical lenses 300 in the light unit is reduced, but the luminance of each optical lens 300 may be reduced.

The number of optical lenses 300 in the light unit may be the same as the number of side protrusions 360 .

19 is a view showing a first example of the light emitting device 100 according to the embodiment. The light emitting device 100 and the circuit board 400 will be described with reference to FIG. 19 .

Referring to FIG. 19 , the light emitting device 100 includes a light emitting chip 100A. The light emitting device 100 may include a light emitting chip 100A and a phosphor layer 150 disposed on the light emitting chip 100A. The phosphor layer 150 includes at least one or a plurality of blue, green, yellow, and red phosphors, and may be disposed in a single layer or in multiple layers. In the phosphor layer 150, a phosphor is added in a light-transmitting resin material. The light-transmitting resin material may include a material such as silicone or epoxy, and the phosphor may be selectively formed from among YAG, TAG, Silicate, Nitride, and Oxy-nitride-based materials.

The phosphor layer 150 may be disposed on the upper surface of the light emitting chip 100A, or may be disposed on the upper surface and side surfaces of the light emitting chip 100A. The phosphor layer 150 may be disposed on a region where light is emitted from the surface of the light emitting chip 100A, and may convert a wavelength of light.

The phosphor layer 150 may include a single layer or different phosphor layers. In the different phosphor layers, the first layer may include at least one type of red, yellow, and green phosphor, and the second layer may include phosphor layers. It is formed on the first layer and may have a phosphor different from that of the first layer among red, yellow, and green phosphors. As another example, the different phosphor layers may include three or more phosphor layers, but is not limited thereto.

As another example, the phosphor layer 150 may include a film type. Since the film-type phosphor layer provides a uniform thickness, color distribution according to wavelength conversion may be uniform.

When describing the light emitting chip 100A, the light emitting chip 100A includes a substrate 111 , a first semiconductor layer 113 , a light emitting structure 120 , an electrode layer 131 , an insulating layer 133 , and a first It may include an electrode 135 , a second electrode 137 , a first connection electrode 141 , a second connection electrode 143 , and a support layer 140 .

The substrate 111 may use a light-transmitting, insulating or conductive substrate, for example, sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga ₂ O ₃ At least one is available. A plurality of convex portions (not shown) may be formed on at least one or both of the top surface and the bottom surface of the substrate 111 to improve light extraction efficiency. A side cross-sectional shape of each convex portion may include at least one of a hemispherical shape, a semi-elliptical shape, and a polygonal shape. Here, the substrate 111 may be removed from the light emitting chip 100A. In this case, the first semiconductor layer 113 or the first conductive semiconductor layer 115 serves as a top layer of the light emitting chip 100A. can be placed.

A first semiconductor layer 113 may be formed under the substrate 111 . The first semiconductor layer 113 may be formed using a compound semiconductor of a group II to group V element. The first semiconductor layer 113 may be formed of at least one layer or a plurality of layers using a compound semiconductor of a group II to group V element. The first semiconductor layer 113 is, for example, a semiconductor layer using a compound semiconductor of a group III-V element, for example, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, It may include at least one of GaP. The first semiconductor layer 113 has a composition formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), and a buffer layer and undoped ) may be formed of at least one of the semiconductor layers. The buffer layer may reduce a difference in lattice constant between the substrate and the nitride semiconductor layer, and the undoped semiconductor layer may improve crystal quality of a semiconductor. Here, the first semiconductor layer 113 may not be formed.

A light emitting structure 120 may be formed under the first semiconductor layer 113 . The light emitting structure 120 is selectively formed from compound semiconductors of Group II to Group V elements and Group III-V elements, and may emit light at a predetermined peak wavelength within a wavelength range from an ultraviolet band to a visible light band.

The light emitting structure 120 includes a first conductivity type semiconductor layer 115 , a second conductivity type semiconductor layer 119 , and between the first conductivity type semiconductor layer 115 and the second conductivity type semiconductor layer 119 . It includes the formed active layer 117 , and another semiconductor layer may be further disposed on at least one of the top and bottom of each of the layers 115 , 117 , and 119 , but is not limited thereto.

The first conductivity type semiconductor layer 115 is disposed under the first semiconductor layer 113 and may be implemented as a semiconductor doped with a first conductivity type dopant, for example, an n-type semiconductor layer. The first conductivity type semiconductor layer 115 includes a compositional formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). The first conductive semiconductor layer 115 may be selected from a group III-V group element compound semiconductor, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. . The first conductivity type dopant is an n-type dopant and includes dopants such as Si, Ge, Sn, Se, Te, and the like.

The active layer 117 is disposed under the first conductivity type semiconductor layer 115 and selectively includes a single quantum well, a multiple quantum well (MQW), a quantum wire structure, or a quantum dot structure. and includes the cycle of the well layer and the barrier layer. The period of the well layer/barrier layer is, for example, InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaA, InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, InP/GaAs at least one of the pairs of

The second conductive semiconductor layer 119 is disposed under the active layer 117 . The second conductivity type semiconductor layer 119 is a semiconductor doped with a second conductivity type dopant, for example, In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤ 1) contains the composition formula. The second conductive semiconductor layer 119 may be formed of at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. The second conductivity-type semiconductor layer 119 is a p-type semiconductor layer, and the first conductivity-type dopant is a p-type dopant and may include Mg, Zn, Ca, Sr, and Ba.

As another example of the light emitting structure 120 , the first conductivity-type semiconductor layer 115 may be implemented as a p-type semiconductor layer, and the second conductivity-type semiconductor layer 119 may be implemented as an n-type semiconductor layer. A third conductivity type semiconductor layer having a polarity opposite to that of the second conductivity type semiconductor layer may be formed on the second conductivity type semiconductor layer 119 . In addition, the light emitting structure 120 may be implemented as any one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure.

An electrode layer 131 is formed under the second conductive semiconductor layer 119 . The electrode layer 131 may include a reflective layer. The electrode layer 131 may include an ohmic contact layer in contact with the second conductive semiconductor layer 119 of the light emitting structure 120 . The reflective layer may be selected from a material having a reflectance of 70% or more, for example, metals of Al, Ag, Ru, Pd, Rh, Pt, and Ir, and alloys of two or more of the above metals. The metal of the reflective layer may be in contact under the second conductivity type semiconductor layer 119 . The ohmic contact layer may be selected from a light-transmitting material, a metal, or a non-metal material.

The electrode layer 131 may include a stacked structure of a light-transmitting electrode layer/reflective layer, and the light-transmitting electrode layer may include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), or indium aluminum (IAZO). zinc oxide), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), Ag, Ni, Al, Rh, Pd , Ir, Ru, Mg, Zn, Pt, Au, Hf, and optional combinations thereof. A reflective layer made of a metallic material may be disposed under the light-transmitting electrode layer, for example, from among materials consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and selective combinations thereof. can be formed. As another example, the reflective layer may be formed in a distributed bragg reflection (DBR) structure in which two layers having different refractive indices are alternately disposed.

A light extraction structure such as roughness may be formed on the surface of at least one of the second conductive semiconductor layer 119 and the electrode layer 131, and this light extraction structure changes the critical angle of incident light, It can improve the light extraction efficiency.

The insulating layer 133 is disposed under the electrode layer 131 , a lower surface of the second conductive semiconductor layer 119 , side surfaces of the second conductive semiconductor layer 119 and the active layer 117 , and the It may be disposed in a partial region of the first conductivity type semiconductor layer 115 . The insulating layer 133 is formed in a region excluding the electrode layer 131 , the first electrode 135 , and the second electrode 137 in the lower region of the light emitting structure 120 . The lower part is electrically protected.

The insulating layer 133 includes an insulating material or insulating resin formed of at least one of oxide, nitride, fluoride, and sulfide having at least one of Al, Cr, Si, Ti, Zn, and Zr. The insulating layer 133 may be selectively formed from, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ . The insulating layer 133 may be formed as a single layer or a multilayer, but is not limited thereto. The insulating layer 133 is formed to prevent an interlayer short circuit of the light emitting structure 120 when a metal structure for flip bonding is formed under the light emitting structure 120 .

The insulating layer 133 may be formed in a distributed bragg reflector (DBR) structure in which first and second layers having different refractive indices are alternately disposed, the first layer being SiO ₂ , Si ₃ N ₄ , Any one of Al ₂ O ₃ and TiO ₂ , and the second layer may be formed of any material other than the first layer, but is not limited thereto, or the first layer and the second layer are formed of the same material. Or it may be formed as a pair having three or more layers. In this case, the electrode layer may not be formed.

A first electrode 135 may be disposed under a portion of the first conductive semiconductor layer 115 , and a second electrode 137 may be disposed under a portion of the electrode layer 131 . A first connection electrode 141 is disposed under the first electrode 135 , and a second connection electrode 143 is disposed under the second electrode 137 .

The first electrode 135 is electrically connected to the first conductive semiconductor layer 115 and the first connection electrode 141 , and the second electrode 137 is connected to the second electrode layer 131 through the electrode layer 131 . It may be electrically connected to the second conductive semiconductor layer 119 and the second connection electrode 143 .

The first electrode 135 and the second electrode 137 are made of at least one of Cr, Ti, Co, Ni, V, Hf, Ag, Al, Ru, Rh, Pt, Pd, Ta, Mo, W or an alloy. may be formed, and may be formed in a single layer or in multiple layers. The first electrode 135 and the second electrode 137 may be formed in the same or different stacked structures. At least one of the first electrode 135 and the second electrode 137 may further have a current diffusion pattern such as an arm or finger structure. In addition, the first electrode 135 and the second electrode 137 may be formed in one or a plurality, but is not limited thereto. At least one of the first and second connection electrodes 141 and 143 may be disposed in plurality, but is not limited thereto.

The first connection electrode 141 and the second connection electrode 143 provide a lead function for supplying power and a heat dissipation path. The first connection electrode 141 and the second connection electrode 143 may include at least one of a circular shape, a polygonal shape, and a shape such as a circular pole or a polygonal pole. The first connection electrode 141 and the second connection electrode 143 are made of metal powder, for example, Ag, Al, Au, Cr, Co, Cu, Fe, Hf, In, Mo, Ni, Si, Sn, Ta. , Ti, W, and optional alloys of these metals. The first connection electrode 141 and the second connection electrode 143 may include In, Sn, Ni, Cu, and optional alloys thereof to improve adhesion between the first electrode 135 and the second electrode 137 . It may be plated with any one of the metals.

The support layer 140 includes a thermally conductive material and is disposed around the first electrode 135 , the second electrode 137 , the first connection electrode 141 , and the second connection electrode 143 . can be Lower surfaces of the first and second connection electrodes 141 and 143 may be exposed on a lower surface of the support layer 140 .

The supporting layer 140 is used as a layer supporting the light emitting device 100 . The support layer 140 is formed of an insulating material, and the insulating material is formed of, for example, a resin layer such as silicone or epoxy. As another example, the insulating material may include a paste or insulating ink. The insulating material is polyacrylate resin, epoxy resin, phenolic resin, polyamides resin, polyimides rein, unsaturated polyesters resin, polyphenylene ether resin (PPE), polyphenilene oxide resin (PPO), polyphenylenesulfides resin, cyanate ester resin, benzocyclobutene (BCB), Polyamido-amine Dendrimers (PAMAM), and Polypropylene-imine, Dendrimers (PPI), and PAMAM-OS (organosilicon) having a PAMAM internal structure and an organosilicon outer surface. can be The support layer 140 may be formed of a material different from that of the insulating layer 133 .

At least one of compounds such as oxide, nitride, fluoride, and sulfide having at least one of Al, Cr, Si, Ti, Zn, and Zr may be added into the support layer 140 . Here, the compound added into the support layer 140 may be a heat spreader, and the heat spreader may be used as powder particles, grains, fillers, or additives of a predetermined size. The heat spreader includes a ceramic material, and the ceramic material is a co-fired low temperature co-fired ceramic (LTCC), high temperature co-fired ceramic (HTCC), and alumina. , quartz, calcium zirconate, forsterite, SiC, graphite, fusedsilica, mullite, cordierite, zirconia, beryllia ), and at least one of aluminum nitride. The ceramic material may be formed of a metal nitride having higher thermal conductivity than a nitride or oxide among insulating materials such as nitride or oxide, and the metal nitride may include, for example, a material having a thermal conductivity of 140 W/mK or more. The ceramic material is, for example, SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , BN, Si ₃ N ₄ , SiC (SiC-BeO), BeO, It may be a ceramic series such as CeO or AlN. The thermally conductive material may include a component of C (diamond, CNT).

The light emitting chip 100A is mounted on the circuit board 400 in a flip manner. The circuit board 400 includes a metal layer 471 , an insulating layer 472 on the metal layer 471 , a circuit layer (not shown) having a plurality of lead electrodes 473,474 on the insulating layer 472 , and the circuit layer and a protective layer 475 to protect the The metal layer 471 is a heat dissipation layer, and includes a metal having high thermal conductivity, for example, a metal such as Cu or Cu-alloy, and may be formed in a single-layer or multi-layer structure.

The insulating layer 472 insulates between the metal layer 471 and the circuit layer. The insulating layer may include at least one of a resin material such as epoxy, silicone, glass fiber, prepreg, polyphthalamide (PPA), liquid crystal polymer (LCP), and polyamide9T (PA9T). . In addition, an additive such as a metal oxide, for example, TiO ₂ , SiO ₂ , Al ₂ O ₃ may be added in the insulating layer 472 , but the present disclosure is not limited thereto. As another example, the insulating layer 472 may be used by adding a material such as graphene into an insulating material such as silicon or epoxy, but is not limited thereto.

The insulating layer 472 may be an anodized region in which the metal layer 471 is formed by an anodizing process. Here, the metal layer 471 may be made of aluminum, and the anodized region may be made of a material such as Al ₂ O ₃ .

The first and second lead electrodes 473,474 are electrically connected to the first and second connection electrodes 141 and 143 of the light emitting chip 100A. Conductive adhesives 461 and 462 may be disposed between the first and second lead electrodes 473,474 and the connection electrodes 141 and 143 of the light emitting chip 100A. The conductive adhesives 461 and 462 may include a metal material such as a solder material. The first lead electrode 473 and the second lead electrode 474 are circuit patterns and supply power.

The passivation layer 475 may be disposed on the circuit layer. The protective layer 475 includes a reflective material, and may be formed of, for example, a resist material, for example, a white resist material, but is not limited thereto. The passivation layer 475 may function as a reflective layer, and may be formed of, for example, a material having a higher reflectance than an absorptivity. As another example, the protective layer 475 may be formed of a material absorbing light, and the light absorbing material may include a black resist material.

A second example of the light emitting device of the lighting module will be described with reference to FIG. 20 .

Referring to FIG. 20 , the light emitting device 100 includes a light emitting chip 100B. The light emitting device 100 may include a light emitting chip 100B and a phosphor layer 150 disposed on the light emitting chip 100B. The phosphor layer 150 includes at least one or a plurality of blue, green, yellow, and red phosphors, and may be disposed in a single layer or in multiple layers. In the phosphor layer 150, a phosphor is added in a light-transmitting resin material. The light-transmitting resin material may include a material such as silicone or epoxy, and the phosphor may be selectively formed from among YAG, TAG, Silicate, Nitride, and Oxy-nitride-based materials.

The phosphor layer 150 may be disposed on the upper surface of the light emitting chip 100B, or may be disposed on the upper surface and side surfaces of the light emitting chip 100B. The phosphor layer 150 may be disposed on a region where light is emitted from the surface of the light emitting chip 100B, and may convert a wavelength of light.

The light emitting chip 100B includes a substrate 111 , a first semiconductor layer 113 , a light emitting structure 120 , an electrode layer 131 , an insulating layer 133 , a first electrode 135 , and a second electrode 137 . , a first connection electrode 141 , a second connection electrode 143 , and a support layer 140 . The substrate 111 and the second semiconductor layer 113 may be removed.

The light emitting chip 100B of the light emitting device 100 and the circuit board 400 may be connected to each other through connection electrodes 161 and 162 , and the connection electrodes 161 and 162 may include a conductive pump, that is, a solder bump. The conductive pump may be arranged in one or a plurality under each of the electrodes 135 and 137, but is not limited thereto. The insulating layer 133 may expose the first and second electrodes 135 and 137 , and the first and second electrodes 135 and 137 may be electrically connected to the connection electrodes 161 and 162 .

A third example of the light emitting device will be described with reference to FIG. 21 .

Referring to FIG. 21 , the light emitting device 100 includes a light emitting chip 200A connected to a circuit board 400 . The light emitting device 100 may include a phosphor layer 250 disposed on the surface of the light emitting chip 200A. The phosphor layer 250 converts the wavelength of the incident light. As shown in FIG. 4 , an optical lens ( 300 in FIG. 4 ) is disposed on the light emitting device 100 to adjust the directivity of light emitted from the light emitting chip 200A.

The light emitting chip 200A includes a light emitting structure 225 and a plurality of pads 245 and 247 . The light emitting structure 225 may be formed of a compound semiconductor layer of a group II to group VI element, for example, a compound semiconductor layer of a group III-V element or a compound semiconductor layer of a group II-VI element. The plurality of pads 245 and 247 are selectively connected to the semiconductor layer of the light emitting structure 225 and supply power.

The light emitting structure 225 includes a first conductivity type semiconductor layer 222 , an active layer 223 , and a second conductivity type semiconductor layer 224 . The light emitting chip 200A may include a substrate 221 . The substrate 221 is disposed on the light emitting structure 225 . The substrate 221 may be, for example, a light-transmitting, insulating substrate, or a conductive substrate. For such a configuration, reference will be made to the description of the light emitting structure and the substrate of FIG. 4 .

Pads 245 and 247 are disposed below the light emitting chip 200A, and the pads 245 and 247 include first and second pads 245 and 247 . The first and second pads 245 and 247 are disposed under the light emitting chip 200A to be spaced apart from each other. The first pad 245 is electrically connected to the first conductive semiconductor layer 222 , and the second pad 247 is electrically connected to the second conductive semiconductor layer 224 . The first and second pads 245 and 247 may have a polygonal or circular bottom shape, or may be formed to correspond to the shapes of the first and second lead electrodes 415 and 417 of the circuit board 400 . A lower surface area of each of the first and second pads 245 and 247 may be formed to have a size corresponding to a size of the upper surface of each of the first and second lead electrodes 415 and 417 , for example.

The light emitting chip 200A may include at least one of a buffer layer (not shown) and an undoped semiconductor layer (not shown) between the substrate 221 and the light emitting structure 225 . The buffer layer is a layer for alleviating a difference in lattice constant between the substrate 221 and the semiconductor layer, and may be selectively formed from group II to group VI compound semiconductors. An undoped group III-V compound semiconductor layer may be further formed under the buffer layer, but is not limited thereto. The substrate 221 may be removed. When the substrate 221 is removed, the phosphor layer 250 may be in contact with an upper surface of the first conductive semiconductor layer 222 or an upper surface of another semiconductor layer.

The light emitting chip 200A includes first and second electrode layers 241,242 , a third electrode layer 243 , and insulating layers 231,233 . Each of the first and second electrode layers 241,242 may be formed as a single layer or a multilayer, and may function as a current diffusion layer. The first and second electrode layers 241,242 may include a first electrode layer 241 disposed under the light emitting structure 225; and a second electrode layer 242 disposed under the first electrode layer 241 . The first electrode layer 241 diffuses the current, and the second electrode layer 241 reflects the incident light.

The first and second electrode layers 241,242 may be formed of different materials. The first electrode layer 241 may be formed of a light-transmitting material, for example, a metal oxide or a metal nitride. The first electrode layer is, for example, indium tin oxide (ITO), ITO nitride (ITON), indium zinc oxide (IZO), IZO nitride (IZON), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), or IGZO (indium zinc oxide). Indium gallium zinc oxide), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), and gallium zinc oxide (GZO) may be selectively formed. The second electrode layer 242 may be in contact with a lower surface of the first electrode layer 241 and function as a reflective electrode layer. The second electrode layer 242 includes a metal, for example, Ag, Au, or Al. The second electrode layer 242 may partially contact the lower surface of the light emitting structure 225 when a portion of the first electrode layer 241 is removed.

As another example, the structure of the first and second electrode layers 241,242 may be stacked in an Omni Directional Reflector layer (ODR) structure. The non-directional reflective structure may be formed as a stacked structure of a first electrode layer 241 having a low refractive index and a second electrode layer 242 made of a highly reflective metal material in contact with the first electrode layer 241 . The electrode layers 241,242 may have, for example, a stacked structure of ITO/Ag. The omnidirectional reflection angle at the interface between the first electrode layer 241 and the second electrode layer 242 may be improved.

As another example, the second electrode layer 242 may be removed, and may be formed of a reflective layer of a different material. The reflective layer may be formed of a distributed bragg reflector (DBR) structure, wherein the distributed Bragg reflector structure includes a structure in which two dielectric layers having different refractive indices are alternately disposed, for example, a SiO ₂ layer , Si ₃ N ₄ layer, TiO ₂ layer, Al ₂ O ₃ layer, and may include a different one of the MgO layer, respectively. As another example, the electrode layers 241,242 may include both a distributed Bragg reflective structure and a non-directional reflective structure, and in this case, the light emitting chip 200A having a light reflectance of 98% or more may be provided. The light emitting chip 200A mounted in the flip method emits light reflected from the second electrode layer 242 through the substrate 221 , so that most of the light may be emitted in the vertical direction. In addition, the light emitted to the side surface of the light emitting chip 200A may be reflected to the incident surface area of the optical lens 300 by the reflective sheet 600 .

The third electrode layer 243 is disposed under the second electrode layer 242 and is electrically insulated from the first and second electrode layers 241,242 . The third electrode layer 243 may be formed of a metal, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), or tin (Sn). ), silver (Ag), and phosphorus (P). A first pad 245 and a second pad 247 are disposed under the third electrode layer 243 . The insulating layers 231,233 block unnecessary contact between the layers of the first and second electrode layers 241,242 , the third electrode layer 243 , the first and second pads 245 and 247 , and the light emitting structure 225 . The insulating layers 231,233 include first and second insulating layers 231,233. The first insulating layer 231 is disposed between the third electrode layer 243 and the second electrode layer 242 . The second insulating layer 233 is disposed between the third electrode layer 243 and the second pads 245 and 247 . The first and second pads 245 and 247 may include the same material as the first and second lead electrodes 415 and 417 .

The third electrode layer 243 is connected to the first conductivity type semiconductor layer 222 . The connection part 244 of the third electrode layer 243 protrudes into a via structure through the lower portions of the first and second electrode layers 241 and 242 and the light emitting structure 225 and is in contact with the first conductive semiconductor layer 222 . do. The connection part 244 may be disposed in plurality. A portion 232 of the first insulating layer 231 extends around the connecting portion 244 of the third electrode layer 243, so that the third electrode layer 243, the first and second electrode layers 241,242, and the second It blocks the electrical connection between the conductive semiconductor layer 224 and the active layer 223. An insulating layer may be disposed on a side surface of the light emitting structure 225 for side protection, but is not limited thereto.

The second pad 247 is disposed under the second insulating layer 233 and makes contact with at least one of the first and second electrode layers 241 and 242 through an open area of the second insulating layer 233 . or connected The first pad 245 is disposed under the second insulating layer 233 and is connected to the third electrode layer 243 through an open area of the second insulating layer 233 . Accordingly, the protrusions 248 of the first pad 247 are electrically connected to the second conductive semiconductor layer 224 through the first and second electrode layers 241,242 , and the protrusions 246 of the second pad 245 . ) is electrically connected to the first conductivity type semiconductor layer 222 through the third electrode layer 243 .

The first and second pads 245 and 247 are spaced apart from each other under the light emitting chip 200A, and face the first and second lead electrodes 415 and 417 of the circuit board 400 . The first and second pads 245 and 247 may include polygonal recesses 271,273 , and the recesses 271,273 are convex in the direction of the light emitting structure 225 . The recesses 271,273 may be formed to have a depth equal to or smaller than the thicknesses of the first and second pads 245 and 247, and the depths of the recesses 271,273 are the first and second pads 245 and 247. can increase the surface area of

Bonding members 255 and 257 are disposed in the region between the first pad 245 and the first lead electrode 415 and in the region between the second pad 247 and the second lead electrode 417 . The bonding members 255 and 257 may include an electrically conductive material, and some are disposed in the recesses 271 and 273 . Since the bonding members 255 and 257 of the first and second pads 215 and 217 are disposed in the recesses 271,273, the bonding area between the bonding members 255 and 257 and the first and second pads 245 and 247 may be increased. have. Accordingly, since the first and second pads 245 and 247 and the first and second lead electrodes 415 and 417 are bonded, the electrical reliability and heat dissipation efficiency of the light emitting chip 200A may be improved.

The bonding members 255 and 257 may include a solder paste material. The solder paste material includes at least one of gold (Au), tin (Sn), lead (Pb), copper (Cu), bismuth (Bi), indium (In), and silver (Ag). Since the bonding members 255 and 257 directly conduct heat transfer to the circuit board 400 , heat conduction efficiency may be improved compared to a structure using a package. In addition, since the bonding members 255 and 257 are a material having a small difference in coefficients of thermal expansion between the first and second pads 245 and 247 of the light emitting chip 200A, heat conduction efficiency may be improved.

As another example, the bonding members 255 and 257 may include a conductive film, wherein the conductive film includes one or more conductive particles in an insulating film. The conductive particles may include, for example, at least one of a metal, a metal alloy, and carbon. The conductive particles may include at least one of nickel, silver, gold, aluminum, chromium, copper, and carbon. The conductive film may include an anisotropic conductive film or an anisotropic conductive adhesive.

An adhesive member, for example, a thermally conductive film may be included between the light emitting chip 200A and the circuit board 400 . The thermally conductive film may include a polyester resin such as polyethylene terephthalate, polybutyrene terephthalate, polyethylene naphthalate, and polybutyrene naphthalate; polyimide resin; acrylic resin; styrene-based resins such as polystyrene and acrylonitrile-styrene; polycarbonate resin; polylactic acid resin; polyurethane resin; etc. can be used. In addition, polyolefin resins such as polyethylene, polypropylene, and ethylene-propylene copolymer; vinyl resins such as polyvinyl chloride and polyvinylidene chloride; polyamide resin; sulfone-based resins; polyether-etherketone-based resins; allylate-based resin; or at least one of a blend of the above resins.

The light emitting chip 200A may improve light extraction efficiency by emitting light through the surface of the circuit board 400 and the side and upper surfaces of the light emitting structure 225 . Since the light emitting chip 200A can be directly bonded to the circuit board 400 , the process can be simplified. In addition, since the heat dissipation of the light emitting chip 200A is improved, it may be usefully utilized in the lighting field.

Such a light unit may be applied to display devices such as various types of portable terminals, notebook computer monitors, laptop computer monitors, and TVs, or may be applied to three-dimensional displays, various lighting lamps, traffic lights, vehicle headlights, and electric billboards.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by those of ordinary skill in the art to which the embodiments belong. Accordingly, the contents related to such combinations and modifications should be interpreted as being included in the scope of the present invention.

In addition, although the embodiment has been described above, it is merely an example and does not limit the present invention, and those of ordinary skill in the art to which the present invention pertains are exemplified above in a range that does not depart from the essential characteristics of the present embodiment. It can be seen that various modifications and applications that have not been made are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And the differences related to these modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

51-54: support projection
100: light emitting element
100A, 110B, 200A: light emitting chip
301: lighting module
150,250: phosphor layer
300,300A: optical lens
315: recess
320: incident surface
310: bottom surface
330: first light exit surface
335: first light exit surface
360: side protrusion
400: circuit board
412,414: absorption layer
405: adhesive
416: hole
514: optical sheet

Claims (22)

circuit board; an optical lens disposed on the circuit board; and a light emitting device disposed between the circuit board and the optical lens.
The optical lens is
bottom surface;
a recess concave in the center of the bottom surface;
an incident surface on which light is incident around the recess;
a first light emitting surface emitting light incident on the incident surface and having a convex curved surface;
a second light emitting surface disposed on the outer lower periphery of the first light emitting surface and extending toward the bottom surface; and
It includes a plurality of support protrusions protruding from the bottom surface,
the bottom surface includes a first edge adjacent to the recess and a second edge adjacent to the second light exit surface;
The distance between the first axis orthogonal to the optical axis from the center of the bottom of the bottom surface and the bottom surface gradually becomes narrower as it approaches the first edge,
The lower region of the incident surface is disposed lower than a horizontal straight line passing through the second edge,
A convex central region of the first light exit surface overlaps the recess in a vertical direction,
the second light exit surface includes a third edge adjacent to the first light exit surface;
The first light exit surface is provided as a convex curved surface from a second vertex of the first light exit surface to a region adjacent to the third edge,
a depth of the recess is greater than a bottom width of the recess;
The diameter of the recess is gradually narrowed toward the first vertex of the incident surface,
The circuit board includes an absorption layer that absorbs incident light and is disposed under the plurality of support protrusions,
wherein the plurality of support protrusions and the absorption layer are disposed in a region in which the luminous intensity of light traveling to the bottom surface of the circuit board is 80% or more of a peak value,
lighting module. According to claim 1,
The bottom surface includes an inclined surface or a concave curved surface between the first edge and the second edge,
A straight line connecting the first edge and the second edge of the bottom surface has an angle of 5 degrees or less with respect to the first axis. According to claim 1,
The center of at least one of the plurality of support protrusions is disposed in the range of 0.82 to 0.85 of the radius of the bottom surface from the optical axis,
The optical axis passes through the center of the bottom of the recess and the second vertex of the first light exit surface. 4. The method according to any one of claims 1 to 3,
The optical lens further includes a side protrusion protruding from the second light exit surface,
The side protrusion is formed on a second axis perpendicular to the optical axis and the first axis,
The plurality of support protrusions are disposed more adjacent to the first axis of the first axis and the second axis orthogonal to the optical axis. 4. The method according to any one of claims 1 to 3,
The recess has a depth of 80% or more of the distance between the second vertex of the first light emitting surface and the bottom surface,
The first vertex of the incident surface is disposed closer to the second vertex of the first light emitting surface than a horizontal straight line passing through the third edge of the second light emitting surface. delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete

Images