200936284 *. 九、發明說明： 【發明所屬之技術領域】 本發明係提供藉由超短脈波而有效率且高品質地將相 對於可視光及近紅外光爲透明體進行加工的方法和裝置。 將超短脈波振盪之雷射光的1部分能量進行波長轉換爲 UV(紫外光）波長’使此UV波長之雷射光在時間上超前原 來的基本波之雷射光而照射於加工對象物。在同一位置 上，以UV雷射光和長波長之雷射光的2種波長之總和能 量的照射，而提升作爲加工對象物的透明體之加工效率， ® 且藉由U V雷射光之先行照射的作用來減低原來的基本波 之雷射光的透過，藉以提供加工品質高的透明體加工方法 和加工裝置。 【先前技術】 在電子工業中，CPU和DRAM、SRAM等之半導體元件 的微細化逐年發展，針對其謀求內部電路的高積體化。這 些元件的構造大多是由在矽晶圓等的半導體基板上稱爲 low-k膜且含有一部分金屬配線的低介電率絕緣膜的構造 〇 所組成的要件。在半導體元件製造製程中，必須以不會對 周遭造成熱損傷或機器損傷的條件來只對絕緣膜的一部分 進行除去加工，爲此，現在奈（nano-)秒雷射等還被用於此 目的。 使用奈秒雷射等之脈波寬度比飛（femto-)秒區域長之 雷射的以往的加工雷射係在對照上，以使用超短脈波雷射 之加工而可減低熱加工變質層的產生者、或即使對此波長 而言爲透明的材料也可藉由以多光子吸收爲代表的非線形 200936284 吸收光來進行加工者亦爲習知技術。不過’因爲超短脈波 的產生係採用在近紅外線之波長域上以寬頻域的光譜而可 獲得雷射效益的雷射媒體，所以振盪效率高的超短脈波係 從近紅外光至中紅外光的波長域。 在欲對在半導體基板上形成的low-k等之絕緣膜的元 件構成要件，採用中紅外光域之波長的超短脈波雷射光而 選擇性地僅將low-k膜組成進行除去加工的情況下，從表 面對絕緣膜施行雷射加工的時候，未被多光子吸收所吸收 ^ 之一部分雷射光會透過，一直到達半導體基板。因爲半導 Ο 體基板材料之雷射加工閎値遠遠低於絕緣膜，所以在基板 材料中，會產生分層（delamination，層間剝離）或切碎 (chipping，碎片）等的機器損傷。因此，對透明體進行加工 的時候，則考慮到使用屬於雷射光的波長域對於透明體而 言爲吸收率很大之雷射波長的UV超短脈波雷射光。使固 體雷射振盪，產生近紅外域雷射光，從此輸出雷射光使用 非線形光學結晶而轉換爲諧波，藉以產生UV超短脈波雷 射光。不過，由於轉換至諧波的效率低而使用UV超短脈 〇 波雷射光時，雷射能量的利用效率會極度下降。 以往，提出了將水銀燈等的紫外線照射於加工表面 上，同時照射近紅外線雷射光，藉以從表面進行加工。不 過，因爲水銀燈光等之照射面積大，也對加工對象之不需 要的部分照射UV光，所以不適合作爲微細功能元件的加 工方法，同時來自水銀燈等之以往的UV光源對加工物表 面照射的功率密度小，要實際觀察到效果在實質上也有困 難。 200936284 [專利文獻1]美國再發證專利第375 85號說明書 【發明內容】 [本發明欲解決的課題] 本發明中欲解決的問題點在於提供一種加工方法和加 工裝置，其使用超短脈波雷射光，對半導體基板等上面的 透明體從表面以高精度實施加工的時候，減低透過透明體 之光量的同時，使加工效率高效率地提升。 [解決課題的手段] 爲了解決上述課題，本發明係一種利用雷射之加工方 法，其特徵爲由以下步驟所組成：產生屬於具有第1波長 之超短脈波的第1雷射的步驟；將前述第1雷射之能量的 一部分轉換成屬於超短脈波的第2雷射的步驟，而該超短 脈波具有屬於第1波長之諧波的第2波長；將相對於第2 雷射的時間延遲賦予第1雷射的步驟；在同軸上使第1雷 射以及第2雷射聚光的步驟；以及將聚光之第1及第2雷 射照射於對象加工物的步驟。 另外，其特徵爲前述時間延遲係lOOps以內。 另外，其特徵爲第1波長係超過500nm的波長，第2 波長係500nm以下的波長。 另外，其特徵爲前述加工對象物至少對於第1波長而 言爲透明的。 另外，其特徵爲前述加工對象物係由形成於基板和基 板表面上之至少一部分且至少對於第1波長而言爲透明的 透明層所組成之物體的前述透明層部分。 另外，其特徵爲前述透明層係絕緣體。 200936284 此外，其特徵爲前述基板係半導 另一方面，本發明係一種雷射加 以下所組成：雷射產生手段，其產生 脈波的第1雷射；波長轉換手段，其 量的一部分轉換成屬於超短脈波的第 波具有屬於第1波長之諧波的第2波 其將相對於第2雷射的時間延遲賦予 手段，其在同軸上使第1雷射以及第 另外，其特徵爲前述延遲產生手 l〇〇ps以內。 另外，其特徵爲第1波長係超過 波長係500nm以下的波長。 此外，其特徵爲前述延遲產生手 比第2雷射還要長的光路徑長度。 [發明的效果] 將第1脈波雷射光的一部分轉換 波雷射光，並且對第1脈波雷射光賦 雷射光在同軸上聚光並照射於加工物 加工量相對於照射能量的比例而求得 另外，因爲加工對象物對第1脈 明，所以能減低第1雷射光透過加工 是在基板上形成透明的加工對象物時 的損傷。 【實施方式】 以下，利用第1圖來詳細說明本 體基板。 工裝置，其特徵爲由 具有第1波長之超短 將前述第1雷射之能 2雷射，而該超短脈 長；延遲產生手段， 第1雷射；以及聚光 2雷射聚光。 段的前述時間延遲係 500nm的波長，第2 段係對第1雷射賦予 成諧波而產生第2脈 予時間延遲，使2個 體，因而能使以除去 之加工效率增大。 波雷射光而言爲透 對象物的光量，特別 ’能減輕賦予該基板 發明。在第1圖中， 200936284 表示產生多波長脈波雷射的構成例。作爲雷射增幅媒體， 摻雜Ti的藍寶石（中心波長780nm)等，從近紅外光區域之 波長700到980nm之波長域的鎖模雷射、或者摻雜餌或鏡 的光纖雷射之鎖模輸出，使用非線形光學結晶來使振盪頻 率倍增，以Ti藍寶石之增幅媒體來將其增幅，並使用使超 短脈波之近紅外線雷射振盪的雷射振盪部1來作爲雷射 源。超短脈波指的是脈波寬度lOOps以內者。 使用波長板（例如，2分之1波長板）3，將來自雷射振 盪部1的近紅外線雷射輸出射束2在偏光面之方向上旋 轉，並使其在由非線形光學結晶所組成之波長轉換部5 中，產生基本波之波長的2分之1或者3分之1、或者4 分之1的UV(紫外線）雷射光。因爲此轉換技術係能採用眾 所皆知之波長轉換技術來產生UV雷射光，所以在此省略 細節。因爲非線形光學結晶之結晶軸方向和轉換前的雷射 光之直線偏光面的相對關係會影響到產生諧波的轉換效 率，所以爲了轉換效率的調整而設置波長板3。當近紅外 線雷射輸出射束2通過波長轉換部5內時，會成爲未波長 轉換而通過的基本波成分之第1雷射光8與轉換成UV光 的第2雷射光9。由轉換效率來決定兩者的比例，以同軸 配置而獲得以適當比率混合的2波長雷射光6。 此2波長雷射光6係藉由波長分割濾波器7而分歧爲 第2雷射光9和第1雷射光8的成分。第2雷射光9係藉 由波長分割濾波器7而反射並朝向波長合成濾波器17，另 一方面，近紅外光的第1雷射光8係通過濾波器7而經由 具有全反射鏡11、12的光路徑迂迴單元19,而朝向波長合 200936284 成濾波器17。藉由光路徑迂迴單元19，因爲第1雷射光8 行進於比第2雷射光9還要長的光路，所以能賦予與光路 徑差行進時間對應之延遲時間。能以賦予光路徑差的簡單 構成來實現時間延遲，另外，能藉由使光路徑差變化來改 變延遲時間。第1雷射光8和第2雷射光9係由波長合成 濾波器17所合成，作爲照射用雷射光18而再次被配置在 同軸上。 在輸出波長轉換部5的時間點上，2波長雷射光6之 屬於近紅外光的第1雷射脈波和屬於UV的第2雷射脈波 在時間上係充分地重疊，但在照射用雷射光1 8中，第2雷 射光9之脈波方面，主脈波部分會先到達全反射鏡1 5，第 1雷射光8的脈波會延後到達全反射鏡1 5。2波長的雷射光 會在空間上重疊而入射於聚光透鏡16。然後，照射於在加 工物體20之表面或內部產生的聚光點13，藉由UV的第2 雷射光9與近紅外光的第1雷射光8和加工物體20的相互 作用，而精密地實施有效率的微細加工。 加工物體20較佳爲至少對於第1雷射光而言爲透明的 ® 物體。或者，如第1圖所示，形成於基板22及其表面上之 至少一部分且由至少對第1雷射光而言爲透明之透明體14 所組成的物體。在此，所謂的透明並非侷限於使光1〇〇 %透 過，也包含在某種程度上透過的情況。透明體1 4係例如玻 璃等的絕緣體，另外，基板22係例如矽等的半導體基板。 將聚光點13定在透明體14的表面或內部而照射雷射光。 在僅將近紅外光之長波長的雷射光照射於前述構造的 加工物體20的情況下，在透明體14的表面31上，超過加 -10- 200936284 工閾値之功率密度時係在表面進行加工。另一方面.，聚光 點形成於透明體1 4的內部，在此聚光點之電場非常強的情 況下，在透明體內部產生絕緣破壞，而形成密度變化和缺 陷。在任一情況下，均因僅將近紅外雷射光聚光於透明體 的情況下，在多光子吸收等之非線形吸收作用下，並非所 有的雷射能量都被吸收，所以剩下一部分的雷射能量會進 —步透過基板22的內部。 另一方面，在結合UV雷射光與近紅外雷射光而照射 的情況下，在大多數的透明體中，雷射光不會侵入內部， 而在表面附近就被吸收。 當照射設有時間延遲而使UV和近紅外光重疊的雷射 光時，相較於僅單一波長的雷射照射，加工精度提升，加 工除去量增加。這是因爲藉由UV雷射光而在透明體表面 上產生自由電子電漿，接著照射的近紅外雷射光會被逆制 動放射所吸收。此時，因爲近紅外雷射光係除了多光子吸 收以外，還被逆制動放射所吸收，所以相較於僅照射近紅 外雷射光的情況，能量吸收量增大，其結果，除去加工效 〇 ¥ 率（除去加工體積/照射能量）增加。除去加工效率增大的時 間延遲係由電子-格子緩和時間所決定，爲大槪1 OOps以下。 藉由使近紅外光之第1雷射光的功率和UV之第2雷 射光的功率的比例變化，能使所需之加工部的特性最佳 化。在使此功率的比例變化的情況下，使偏光板3旋轉並 控制非線形光學結晶單元的轉換效率，能控制2個波長的 能量比率。 [實施例] -11- 200936284 以鈦藍寶石結晶作爲雷射媒體，產生屬於近紅外光區 域之波長78 0nm的脈波寬度100ps以下之第1雷射光，此 外，使用非線形結晶BBO而產生了使頻率倍增至3倍之UV 區域的波長260nm之第2雷射光。藉由使第1雷射光通過 迂迴光路，使其在時間上比第2雷射光照射還要延遲。此 外，藉由透鏡而聚光，並照射於鈉鈣玻璃。第1雷射脈波 爲15yJ，第2雷射脈波爲10//J。 第1雷射光之產生手段的雷射媒體係除了鈦藍寶石結 晶（中心波長780nm)以外，還可使用添加餌之纖維、添加鏡 之纖維、Nd : YAG結晶、Nd : YV〇4結晶、Nd : YLF結晶等。 第2圖係表示透明體的除去加工體積之延遲時間依存 性。在此圖中，橫軸係第1雷射光（波長780nm)相對於第2 雷射光（波長260nm)的照射時間延遲。縱軸係雷射光每1脈 波的除去加工體積。只是，作爲260nm + 780nm者是本實施 例的除去加工體積。作爲260nm者係單獨照射第2雷射光 (波長260nm)之情況下的除去加工體積，作爲7 80nm者係單 獨照射第1雷射光（波長7 80nm)之情況下的除去加工體積。 賦予時間延遲時，雷射光之每1脈波的除去加工體積會增 大。亦即，延遲大約1PS以上時，每一脈波能量的除去加 工體積係增大至相對於同時照射之除去體積的3倍以上。 亦即’比在將各雷射光個別照射於透明體上的情況，能獲 得3倍以上的高加工效率。另外，爲了獲得最大的除去加 工效率，則表示存在有最合適之延遲時間。 第3圖係表示第1雷射光透過率之延遲時間依存性。 在此圖中，橫軸保第1雷射光（波長7 80nm)相對於第2雷射 -12- 200936284 光（波長26 0nm)的照射時間延遲。另外’縱軸係第1雷射光 的透過光量，就是與單獨照射第1雷射光時對應的相對 値。賦予時間延遲時，透過率就下降。透過率下降的時間 延遲係會與前述除去加工效率增大的時間延遲相同。此第 1雷射光之透過率的下降係在對具有薄膜狀之透明體的半 導體元件等進行加工時很重要，會減低對基底之半導體等 的基板造成損傷。亦即，藉由使用本發明’在以半導體爲 首之各種元件的薄膜除去加工時，加工效率能提升，能實 現減低對基底之半導體等的基板造成損傷的高品質加工。 [產業利用性] 作爲本發明的活用例，對於用於半導體元件的l〇w-k 膜等絕緣膜之除去加工、用於液晶等之顯示裝置的透明電 極膜之加工、矽晶圓的半導體記憶體之冗餘性電路的導電 性鏈接之電路元件的透明保護膜之除去加工、其他從表面 進行多層構造電子元件之層內部的除去加工時之微細且熱 影響少的加工而言很有效。能適用於作爲表面保護層而在 電路元件上部之表面形成非活性層的電容器、電阻、電感200936284 *. EMBODIMENT DESCRIPTION OF THE INVENTION [Technical Field] The present invention provides a method and apparatus for processing a transparent body with respect to visible light and near-infrared light efficiently and with high quality by ultrashort pulse waves. . One part of the energy of the laser light oscillated by the ultrashort pulse wave is wavelength-converted into a UV (ultraviolet light) wavelength, and the laser light of this UV wavelength is irradiated onto the object to be processed by temporally exceeding the original fundamental laser light. At the same position, the processing energy of the transparent body as the object to be processed is enhanced by the irradiation of the sum of the two wavelengths of the UV laser light and the long-wavelength laser light, and the effect of the ultraviolet light is applied first. To reduce the transmission of the original basic wave of laser light, in order to provide a processing method and processing device with high processing quality. [Prior Art] In the electronics industry, the miniaturization of semiconductor elements such as CPUs, DRAMs, and SRAMs has been progressing year by year, and the internal circuits have been highly integrated. The structure of these elements is often composed of a structure of a low dielectric constant insulating film called a low-k film on a semiconductor substrate such as a germanium wafer and containing a part of metal wiring. In the semiconductor device manufacturing process, only a part of the insulating film must be removed without causing thermal damage or machine damage to the surroundings. For this reason, a nano-second laser or the like is also used for this purpose. purpose. In contrast, a conventional processing laser system in which a pulse width of a nanosecond laser or the like is larger than that of a femto-second region is used, and the processing of the ultra-short pulse laser can be used to reduce the hot-processed metamorphic layer. It is also known that the generator, or a material that is transparent to this wavelength, can be processed by the non-linear 200936284 absorbing light represented by multiphoton absorption. However, because the ultrashort pulse wave is generated by using a wide-frequency domain spectrum in the near-infrared wavelength region to obtain laser efficiency, the ultra-short pulse wave with high oscillation efficiency is from near-infrared light to medium. The wavelength domain of infrared light. In order to form an element of an insulating film such as low-k formed on a semiconductor substrate, ultra-short pulse laser light of a wavelength in the mid-infrared region is used to selectively remove only the low-k film composition. In the case where the insulating film is subjected to laser processing from the surface, a part of the laser light that is not absorbed by the multiphoton absorption passes through the semiconductor substrate. Since the laser processing of the semiconductor substrate material is much lower than that of the insulating film, machine damage such as delamination or chipping occurs in the substrate material. Therefore, when processing a transparent body, it is considered to use a UV ultrashort pulse laser light having a laser beam having a large absorption rate for a transparent body in a wavelength domain belonging to laser light. The solid laser is oscillated to generate near-infrared laser light, from which the output laser light is converted into harmonics using non-linear optical crystallization to generate UV ultrashort pulse laser light. However, the use efficiency of laser energy is extremely degraded when UV ultrashort pulse 雷 laser light is used due to low efficiency of switching to harmonics. Conventionally, it has been proposed to irradiate ultraviolet rays such as a mercury lamp onto a machined surface while irradiating near-infrared laser light to perform processing from the surface. However, since the irradiation area of the mercury lamp or the like is large, and the unnecessary portion of the object to be processed is irradiated with the UV light, it is not suitable as a processing method for the fine functional element, and the power from the conventional UV light source such as a mercury lamp is applied to the surface of the workpiece. The density is small, and it is actually difficult to actually observe the effect. [Recommended] The problem to be solved by the present invention is to provide a processing method and a processing apparatus using ultra-short veins. In the case where the transparent body on the semiconductor substrate or the like is processed with high precision from the surface, the amount of light transmitted through the transparent body is reduced, and the processing efficiency is efficiently improved. [Means for Solving the Problems] In order to solve the above problems, the present invention is a processing method using a laser, characterized in that it comprises the steps of: generating a first laser belonging to an ultrashort pulse wave having a first wavelength; Converting a part of the energy of the first laser into a second laser belonging to an ultrashort pulse, and the ultrashort pulse has a second wavelength belonging to a harmonic of the first wavelength; The step of giving a time delay to the first laser; the step of concentrating the first laser and the second laser coaxially; and the step of irradiating the first and second laser beams to the target workpiece. In addition, it is characterized in that the aforementioned time delay is within 100 ps. Further, the first wavelength is a wavelength exceeding 500 nm, and the second wavelength is a wavelength of 500 nm or less. Further, the object to be processed is at least transparent to the first wavelength. Further, the object to be processed is the transparent layer portion of an object composed of at least a part of the substrate and the surface of the substrate and which is transparent to at least the first wavelength. Further, it is characterized by the aforementioned transparent layer insulator. 200936284 In addition, the above-mentioned substrate is semi-conductive. On the other hand, the present invention is a laser plus the following: a laser generating means for generating a first laser of a pulse wave; and a wavelength converting means for converting a part of the amount The first wave belonging to the ultrashort pulse wave has a second wave belonging to the harmonic of the first wavelength, and the time delay is given to the second laser, and the first laser and the second are coaxially formed. The above delay is generated within the hand l ps. Further, it is characterized in that the first wavelength system exceeds the wavelength of the wavelength system of 500 nm or less. Further, it is characterized in that the aforementioned delay generates a light path length longer than the second laser. [Effects of the Invention] A part of the first pulsed laser light is converted into a laser light, and the first pulsed laser light is concentrated on the coaxial light and irradiated to the ratio of the processed material amount to the irradiation energy. In addition, since the object to be processed has the first pulse, it is possible to reduce the damage when the first laser light transmission process is to form a transparent object to be processed on the substrate. [Embodiment] Hereinafter, a body substrate will be described in detail using Fig. 1 . The device is characterized in that the first laser is capable of 2 lasers having a short wavelength of the first wavelength, and the ultrashort pulse length; the delay generating means, the first laser; and the concentrated 2 laser concentrating . The aforementioned time delay of the segment is a wavelength of 500 nm, and the second phase imparts a second pulse delay to the first laser, and the second pulse is delayed by two, so that the processing efficiency of the removal can be increased. In the case of the Pole light, the amount of light transmitted through the object is particularly reduced. In Fig. 1, 200936284 shows a configuration example in which a multi-wavelength pulse laser is generated. As a laser amplification medium, Ti-doped sapphire (center wavelength 780 nm), etc., mode-locked laser from the wavelength range of 700 to 980 nm in the near-infrared region, or mode-locked fiber laser with doped bait or mirror The output is multi-linear optical crystallization to multiply the oscillation frequency, and is amplified by a Ti sapphire amplifying medium, and a laser oscillating portion 1 that oscillates the near-infrared laser of the ultrashort pulse is used as a laser source. Ultrashort pulse refers to the pulse width within 100 ps. The near-infrared laser output beam 2 from the laser oscillating portion 1 is rotated in the direction of the polarizing surface using a wavelength plate (for example, a one-half wave plate) 3, and is composed of non-linear optical crystals. In the wavelength conversion unit 5, one-half of the wavelength of the fundamental wave or one-third of the wavelength or one-fourth of the UV (ultraviolet) laser light is generated. Since this conversion technique is capable of generating UV laser light using well-known wavelength conversion techniques, details are omitted here. Since the relative relationship between the crystal axis direction of the nonlinear optical crystal and the linear polarizing surface of the laser light before conversion affects the conversion efficiency of generating harmonics, the wave plate 3 is provided for the adjustment of the conversion efficiency. When the near-infrared laser output beam 2 passes through the wavelength conversion unit 5, the first laser light 8 having a fundamental wave component that has not passed through the wavelength conversion and the second laser light 9 converted into UV light are formed. The ratio of the two is determined by the conversion efficiency, and the two-wavelength laser light 6 mixed at an appropriate ratio is obtained in a coaxial arrangement. The two-wavelength laser light 6 is branched into the components of the second laser light 9 and the first laser light 8 by the wavelength division filter 7. The second laser light 9 is reflected by the wavelength division filter 7 and directed toward the wavelength synthesis filter 17. On the other hand, the first laser light 8 of near-infrared light passes through the filter 7 via the total reflection mirrors 11, 12 The optical path bypasses unit 19 and becomes a filter 17 toward the wavelength of 200936284. By the optical path switching unit 19, since the first laser light 8 travels to an optical path longer than the second laser light 9, it is possible to give a delay time corresponding to the optical path difference traveling time. The time delay can be realized by a simple configuration that imparts a difference in optical path, and the delay time can be changed by changing the optical path difference. The first laser light 8 and the second laser light 9 are combined by the wavelength synthesizing filter 17, and are again placed on the coaxial as the irradiation laser light 18. At the time of outputting the wavelength conversion unit 5, the first laser pulse wave belonging to the near-infrared light of the two-wavelength laser light 6 and the second laser pulse wave belonging to the UV are sufficiently overlapped in time, but for the irradiation In the laser light 18, in the pulse wave of the second laser light 9, the main pulse wave portion first reaches the total reflection mirror 15, and the pulse wave of the first laser light 8 is delayed to reach the total reflection mirror 15. The two-wavelength Ray The emitted light is spatially overlapped and incident on the collecting lens 16. Then, the condensed spot 13 generated on the surface or inside of the processed object 20 is precisely implemented by the interaction between the second laser light 9 of the UV and the first laser light 8 of the near-infrared light and the processed object 20. Efficient micromachining. The processed object 20 is preferably a ® object that is transparent to at least the first laser light. Alternatively, as shown in Fig. 1, an object formed on at least a part of the substrate 22 and its surface and composed of a transparent body 14 which is transparent to at least the first laser light. Here, the term "transparency" is not limited to the case where light is transmitted through a range of 1%, and is also transmitted to some extent. The transparent body 14 is an insulator such as glass, and the substrate 22 is a semiconductor substrate such as tantalum. The focused spot 13 is positioned on the surface or inside of the transparent body 14 to illuminate the laser light. In the case where only the long-wavelength laser light of the near-infrared light is irradiated onto the processed object 20 of the above-described configuration, on the surface 31 of the transparent body 14, when the power density exceeding the threshold of -10-200936284 is exceeded, the surface is processed. On the other hand, the condensed spot is formed inside the transparent body 14 and, when the electric field at the condensing point is very strong, dielectric breakdown occurs inside the transparent body to form density variations and defects. In either case, since only the near-infrared laser light is condensed on the transparent body, not all of the laser energy is absorbed by the nonlinear absorption of multiphoton absorption or the like, so a part of the laser energy is left. It will advance through the inside of the substrate 22. On the other hand, in the case of combining UV laser light and near-infrared laser light, in most transparent bodies, the laser light does not intrude into the inside but is absorbed near the surface. When laser light having a time delay and overlapping of UV and near-infrared light is irradiated, the processing accuracy is improved and the processing removal amount is increased as compared with laser irradiation of only a single wavelength. This is because free electron plasma is generated on the surface of the transparent body by UV laser light, and then the near-infrared laser light irradiated is absorbed by the counter-actuating radiation. At this time, since the near-infrared laser light system is absorbed by the reverse braking radiation in addition to the multi-photon absorption, the energy absorption amount is increased as compared with the case where only the near-infrared laser light is irradiated, and as a result, the processing effect is removed. The rate (excluding the processing volume/irradiation energy) increases. The time delay in which the processing efficiency is increased is determined by the electron-lattice relaxation time, and is less than 100 psps. By changing the ratio of the power of the first laser light of the near-infrared light to the power of the second laser light of the UV, the characteristics of the desired processed portion can be optimized. In the case where the ratio of this power is changed, the polarizing plate 3 is rotated and the conversion efficiency of the nonlinear optical crystal unit is controlled, and the energy ratio of the two wavelengths can be controlled. [Examples] -11- 200936284 A titanium sapphire crystal was used as a laser medium to generate a first laser light having a pulse width of 100 ps or less at a wavelength of 78 0 nm in a near-infrared light region, and a frequency was generated using a non-linear crystal BBO. The second laser light having a wavelength of 260 nm in the UV region of three times is doubled. By passing the first laser light through the bypass optical path, it is delayed in time by the second laser light irradiation. Further, it is condensed by a lens and irradiated to soda lime glass. The first laser pulse is 15 yJ and the second laser pulse is 10//J. In addition to the titanium sapphire crystal (center wavelength: 780 nm), the laser medium to which the first laser light is generated may be a fiber for adding bait, a fiber for adding a mirror, Nd: YAG crystal, Nd: YV〇4 crystal, Nd: YLF crystals and the like. Fig. 2 is a graph showing the delay time dependence of the removal of the processing volume of the transparent body. In this figure, the horizontal axis is delayed by the irradiation time of the first laser light (wavelength 780 nm) with respect to the second laser light (wavelength 260 nm). The vertical axis is the removal processing volume per 1 pulse of laser light. However, as the 260 nm + 780 nm, the processing volume of this embodiment is removed. The processing volume in the case where the 260 nm was irradiated with the second laser light (wavelength: 260 nm) alone, and the processing volume was removed when the first laser light (wavelength: 7 80 nm) was irradiated by the 780 nm. When the time delay is given, the removal processing volume per laser pulse of the laser light increases. That is, when the delay is about 1 PS or more, the removal processing volume per pulse wave energy is increased to more than three times the volume of the simultaneous irradiation. That is, a higher processing efficiency of three times or more can be obtained as compared with the case where each of the laser beams is individually irradiated onto the transparent body. In addition, in order to obtain the maximum removal processing efficiency, it indicates that there is an optimum delay time. Fig. 3 is a diagram showing the delay time dependence of the first laser light transmittance. In this figure, the horizontal axis is delayed by the irradiation time of the first laser light (wavelength 7 80 nm) with respect to the second laser -12-200936284 light (wavelength 26 0 nm). Further, the amount of transmitted light of the first laser light in the vertical axis is the relative 对应 corresponding to the case where the first laser light is irradiated alone. When the time delay is given, the transmittance decreases. The time delay in which the transmittance is lowered is the same as the time delay in which the above-described removal processing efficiency is increased. The decrease in the transmittance of the first laser light is important in processing a semiconductor element or the like having a film-like transparent body, and damage to a substrate such as a semiconductor such as a substrate is reduced. In other words, by using the film removal processing of the semiconductor-based various elements of the present invention, the processing efficiency can be improved, and high-quality processing for reducing damage to a substrate such as a semiconductor such as a substrate can be achieved. [Industrial use] As an example of the use of the present invention, the processing of the insulating film such as a l〇wk film for a semiconductor device, the processing of a transparent electrode film for a display device such as a liquid crystal, and the semiconductor memory of a germanium wafer are used. It is effective to remove the transparent protective film of the circuit element of the conductive link of the redundant circuit, and to perform processing which is fine and has little thermal influence when the inside of the layer of the multilayer electronic component is removed from the surface. It can be applied to capacitors, resistors, and inductors that form an inactive layer on the surface of the upper portion of the circuit component as a surface protective layer.
D 等的裁修、LCD顯示面板修正加工、PDP顯示裝置的修正 加工、電路基板之功能裁正的其他半導體基板之雷射精密 加工。在高積體化電路之製造中，藉由加工寬度的微小化、 加工除去物的減少等，由於產品良率提升，而可減低電子 零件的製造成本。此外，對於石英、藍寶石等之半導體元 件之基板的孔加工等方面也能獲得有效性。 【圖式簡單說明】 第1圖係實施關於本發明之多波長雷射光照射的方法 -13- 200936284 和裝置構成之說明圖。 第2圖係表示使多波長重疊照射之延遲時間變化時的 除去加工量。 第3圖係表示使多波長重疊照射之延遲時間變化時的 第1雷射光之透過率。 【主要元件符號說明】 1 雷射振盪部 2 近紅外線雷射輸出射束 ❿ 〇 3 波長板 5 波長轉換部 6 2波長雷射光 7 波長分割濾波器 8 近紅外雷射光（第1雷射光） 9 UV雷射光（第2雷射光） 1 1、1 2、1 5 全反射鏡 13 聚光點 14 透明體 16 聚光透鏡 17 波長合成濾波器 18 照射用雷射光 19 光路徑迂迴單元 2〇 加工物體 22 基板 3 1 透明體表面 -14-Laser precision machining of other semiconductor substrates such as D-cutting, LCD display panel correction processing, PDP display device correction processing, and circuit board function correction. In the manufacture of a high-integration circuit, the manufacturing cost can be reduced, and the manufacturing cost of the electronic component can be reduced by increasing the product width and reducing the amount of processed material. Further, it is also effective in the hole processing of a substrate of a semiconductor element such as quartz or sapphire. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an explanatory view showing a method of constructing a multi-wavelength laser beam of the present invention -13-200936284 and a device configuration. Fig. 2 is a view showing the amount of removal processing when the delay time of the multi-wavelength superimposed irradiation is changed. Fig. 3 is a graph showing the transmittance of the first laser light when the delay time of the multi-wavelength superimposed illumination is changed. [Description of main component symbols] 1 Laser oscillation unit 2 Near-infrared laser output beam ❿ 〇3 Wavelength plate 5 Wavelength conversion unit 6 2 wavelength laser beam 7 Wavelength division filter 8 Near-infrared laser light (1st laser light) 9 UV laser light (2nd laser light) 1 1、1 2,1 5 Total reflection mirror 13 Converging point 14 Transparent body 16 Condenser lens 17 Wavelength synthesis filter 18 Laser beam for illumination 19 Optical path bypass unit 2〇Processing object 22 Substrate 3 1 Transparent body surface-14-