CN101293307B - Processing method based on laser and laser processing device - Google Patents
Processing method based on laser and laser processing device Download PDFInfo
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- CN101293307B CN101293307B CN2008100946179A CN200810094617A CN101293307B CN 101293307 B CN101293307 B CN 101293307B CN 2008100946179 A CN2008100946179 A CN 2008100946179A CN 200810094617 A CN200810094617 A CN 200810094617A CN 101293307 B CN101293307 B CN 101293307B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/351—Working by laser beam, e.g. welding, cutting or boring for trimming or tuning of electrical components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention relates to a method that processes efficiently based on ultrashort pulse comprising the steps of: radiating a first laser ultrashort pulse light and a second laser ultrashort pulse to a processing object, wherein the first laser ultrashort pulse light has a first wavelength close to infrared light; the second laser ultrashort pulse has a second wavelength of a ultraviolet band obtained by converting wavelength from the first laser ultrashort pulse light by a non-linear optical crystal unit. Then a time delay of 100s is endowed to the first laser and the first laser is radiated. Therefore, processing efficiency (proportion of processing quantity related to the radiating energy) can be improved and light quantity penetrating the object by the first laser is reduced so as to reduce damage to the substrate, which improves processing quality.
Description
Technical field
The invention provides a kind of to respect to the transparent body of visible light or near infrared light by ultrashort pulse effectively and the method for processing in high quality and device.Be UV (ultraviolet) wavelength with the part energy wavelength conversion of the laser of ultrashort pulse vibration, the laser of this UV wavelength shines workpiece in time in advance than the laser of former basic wave.The aggregate energy that forms by the dual wavelength of using at same place by UV laser and long wavelength laser shines to make the working (machining) efficiency as the transparent body of processing object to improve, and reduce the laser-transmitting of former basic wave by the radiation in advance of UV laser, provide thus crudy high transparent body processing method and processing unit (plant).
Background technology
In electronics industry, the highly integrated of internal circuit made every effort in the development year by year that becomes more meticulous of the semiconductor devices such as CPU, DRAM and SRAM to this.Being configured on the semiconductor substrates such as silicon chip of these devices has many key elements by being called as the low dielectric constant insulating film contexture low-k film, that comprise a part of metal wiring.In semiconductor device manufacturing process, need to bring around not giving under the condition of fire damage or mechanical damage and remove processing to the only part of dielectric film, for this reason, use at present nanosecond laser etc. and realize this purpose.
The existing Laser Processing of the laser longer than femtosecond region contrasts with adopting nanosecond laser isopulse width, in the processing of adopting ultra-short pulse laser, even can reduce the generation of hot-working metamorphic layer and be that transparent material also can be processed by the non-linear absorption take Multiphoton Absorbtion as representative for this wavelength, this is known technology.But, used the laser medium that obtains the laser profit in the near infrared ray wave-length coverage with broadband spectrum due to the generation of ultrashort pulse, so the high ultrashort pulse of oscillation efficiency is arranged in infrared wave-length coverage from near-infrared.
Remove selectively processing in the situation that use the ultra-short pulse laser of middle infrared wavelength only the low-k film to be formed to the device inscape of the dielectric films such as low-k film that form on semiconductor substrate, when dielectric film is implemented Laser Processing from the surface, the a part of laser-transmitting that is not absorbed by the Multiphoton Absorbtion mode, and arrived semiconductor substrate.Due to the Laser Processing threshold value of semiconductive material substrate well below dielectric film, therefore, will delamination occurs (splitting) or mechanical damages such as cracked (breach) in baseplate material.Therefore, processing is during the transparent body, should consider to use in the wave-length coverage of laser the UV ultra-short pulse laser to the large optical maser wavelength of the absorptivity of the transparent body.The UV ultra-short pulse laser produces in the following manner, that is, make the solid state laser vibration produce near infrared region laser, uses the nonlinear optics crystallization to be transformed into higher hamonic wave from this Output of laser.But because the conversion efficiency to higher hamonic wave is low, therefore, when using the UV ultra-short pulse laser, the utilization rate of laser energy is extremely low.
Proposed in prior art by finished surface is shone while the ultraviolet ray of shining mercury vapor lamp etc. the motion that near infrared ray laser is processed from the surface.But, because the irradiated areas such as mercury light are large, even the not part to processing object has also been shone UV light, therefore, processing method as meticulous functional device is unaccommodated, simultaneously, the power density from existing UV light source irradiations such as mercury vapor lamps to the processing object surface is little, and there is substantial difficulty in the actual effect observation that carries out.
[patent document 1] U.S. re-issues No. 37585 specification of patent
Summary of the invention
Invent problem to be solved
Problem to be solved by this invention is, provides a kind of and simultaneously working (machining) efficiency is increased to high efficiency processing method and processing unit (plant) using ultra-short pulse laser to implement to add the light quantity that can reduce the transmission transparent body man-hour to the transparent body on semiconductor substrate etc. from high-precision surface.
Solve the method for problem
In order to solve above-mentioned problem, the present invention relates to a kind of processing method based on laser, it is characterized in that comprising: produce the step of the first laser, described the first laser is the ultrashort pulse with first wavelength; The part of described the first laser energy is transformed into the step of the second laser, described the second laser is to have the grow tall ultrashort pulse of second wave length of subharmonic of first wave; The first laser is given the step of time delay with respect to the second laser; Step with the first laser and the second laser optically focused on coaxial; And, workpiece is shone by the step of the first laser of optically focused and the second laser.
In addition, it is characterized in that, described time delay is in 100ps.
In addition, it is characterized in that, the first wavelength is for surpassing the wavelength of 500nm, and second wave length is the following wavelength of 500nm.
In addition, it is characterized in that, described workpiece is transparent with respect to the first wavelength at least.
In addition, it is characterized in that, described processing object object is the described hyaline layer part of the object that is made of substrate and hyaline layer, and described hyaline layer is formed at least a portion of substrate surface and is transparent with respect to the first wavelength at least.
In addition, it is characterized in that, described hyaline layer is insulator.
In addition, it is characterized in that, described substrate is semiconductor substrate.
On the other hand, the present invention relates to a kind of laser processing device, it is characterized in that comprising: generating device of laser, it produces the first laser, and described the first laser is the ultrashort pulse with first wavelength; Wavelength converting device, its part with described the first laser energy is transformed into the second laser, and described the second laser is to have the grow tall ultrashort pulse of second wave length of subharmonic of first wave; Postpone generating means, it gives time delay to the first laser with respect to the second laser; Beam condensing unit, it is with the first laser and the second laser optically focused on coaxial.
In addition, it is characterized in that, the described time delay of described delay generating means is in 100ps.
In addition, it is characterized in that, the first wavelength is for surpassing the wavelength of 500nm, and second wave length is the following wavelength of 500nm.
In addition, it is characterized in that, described delay generating means is realized by the first laser being given the optical path length longer than the second laser.
The effect of invention
Be transformed into higher hamonic wave to produce the second pulse laser by the part with the first pulse laser, and give time delay to the first pulse laser, two laser optically focused and processing object is shone on coaxial, thus, can improve the working (machining) efficiency of trying to achieve with respect to the ratio of irradiation energy with removing processing capacity.
In addition, because workpiece is transparent with respect to the first pulse laser, thereby can reduce the light quantity of the first laser-transmitting workpiece, particularly under transparent workpiece is formed at situation on substrate, can alleviate the damage that brings to this substrate.
Description of drawings
Fig. 1 is the key diagram of implementing the method and apparatus formation of the multiwavelength laser irradiation relevant with the present invention.
Fig. 2 shows the removal processing capacity in the change time delay situation that makes when multi-wavelength is overlapping to be shone.
Fig. 3 shows the transmissivity of the first laser in the change time delay situation that makes when multi-wavelength is overlapping to be shone.
The explanation of Reference numeral
1. laser oscillating part
2. near infrared ray laser output beam
3. wavelength plate
5. wavelength conversion section
6. dual-wavelength laser
7. wavelength division wave filter
8. near-infrared laser (the first laser)
9.UV laser (the second laser)
11,12,15. completely reflecting mirrors
19. the roundabout unit of light path
13. focal point
14. the transparent body
16. collector lens
17. wavelength composite filter
18. irradiation laser
20. processing object
22. substrate
31. the transparent body is surperficial
The specific embodiment
The present invention is described in detail below with reference to Fig. 1.Fig. 1 shows the configuration example that produces multi-Wavelength Pulses laser.As titanium-doped sapphire (centre wavelength is 780nm) of laser amplification medium etc., use nonlinear optical crystal to make frequency of oscillation double from the locked mode output that the wavelength of near infrared region is the fiber optics laser instrument of the mode-locked laser of 700nm to 980nm wave-length coverage or er-doped or ytterbium, amplification medium with titanium sapphire amplifies it, and the laser oscillating part 1 of the near infrared ray laser of the ultrashort pulse of vibrating is used as lasing light emitter.Ultrashort pulse refer to pulse width at 100ps with interior pulse.
Near infrared ray laser output beam 2 from laser oscillating part 1 is used wavelength plates (for example 1/2nd wavelength plate) 3, rotating that plane of polarisation is direction, producing 1/2nd, 1/3rd or 1/4th UV (ultraviolet ray) laser of basic wave wavelength in wavelength conversion that consisted of by nonlinear optical crystal section 5.Due to by using well-known wavelength replacing technology can produce UV laser, therefore omit the detailed description of this converter technique at this.To affect the conversion efficiency of high-order harmonic generation due to the relative position relation of the linear polarization face of the crystalline axis direction of nonlinear optics crystallization and the laser before conversion, therefore wavelength plate 3 will be set to be used for regulating conversion efficiency.Near infrared ray laser output beam 2 becomes the first laser 8 of the basic wave composition of not making wavelength conversion and passing through when interior by wavelength conversion section 5 and is transformed to the second laser 9 of UV light.Both ratios are decided by conversion efficiency, and the dual-wavelength laser 6 that adequate rate mixes obtains with arranged coaxial.
This dual-wavelength laser 6 is divided into the composition of the second laser 9 and the first laser 8 by wavelength division wave filter 7.The second laser 9 is by 7 reflections of wavelength division wave filter and towards wavelength composite filter 17.On the other hand, near infrared the first laser 8 by wave filter 7 via the light path with completely reflecting mirror 11,12 roundabout unit 19 towards wavelength composite filter 17.Owing to having walked than the second longer light path of laser 9 by light path roundabout unit 19, the first laser 8, given thus the time delay corresponding with the path difference travel time.Time delay can be realized by giving the so simple formation of path difference, time delay can be changed by changing path difference in addition.The first laser 8 and the second laser 9 synthesize by wavelength composite filter 17, as the irradiation with laser 18 again be configured in coaxial on.
Output time in wavelength conversion section 5, dual-wavelength laser 6 is as near infrared the first laser pulse and fully overlapping in time as the second laser pulse of UV, but use in laser 18 in irradiation, pulse one side of the second laser 9, the main pulse part first arrives completely reflecting mirror 15, and the pulse of the first laser 8 arrival in evening completely reflecting mirror 15.Dual-wavelength laser is spatially injected collector lens 16 overlappingly.Then, shine surface or the inner focal point 13 that forms of processing object 20, by as the second laser 9 of UV with as the interaction between near infrared the first laser 8 and processing object 20, critically implement effective retrofit.
It is transparent object for the first laser at least that processing object 20 is preferably.Or as shown in Figure 1 by substrate 22 and form on its surperficial at least a portion, be the object that the transparent transparent body 14 consists of for the first laser at least.At this, transparent being not limited to must be 100% the light transmissive meaning, also comprises the situation of transmission to a certain degree.The transparent body 14 is such as being the insulators such as glass, and perhaps, substrate 22 is such as being the semiconductor substrates such as silicon.Surface or inside at the transparent body 14 are determined focal point 13 and shine laser.
In the situation that to 20 near infrared long wavelengths' of irradiation of the processing object of described structure laser, in the surface 31 of the transparent body 14, process in the situation that exceed the power density effects on surface of processing threshold value.On the other hand, at the inner focal points that form of the transparent body 14, in the situation that the electric field of this focal point is very strong, will produce insulation breakdown, formation variable density or defective in transparent body inside.In the situation that arbitrary situation is all only gathered near-infrared laser to processing object, owing to can not absorbing all laser energies by non-linear absorption effects such as Multiphoton Absorbtions, therefore residual a part of laser energy further is transmitted to the inside of substrate 22.
On the other hand, in the situation that UV laser and near-infrared laser are shone altogether, most of transparent bodies are all that laser is not invaded inside, but are absorbed near surface.
When being provided with time delay and when UV and the overlapping laser of near-infrared are shone, compare with only shining with the laser of single wavelength, improved machining accuracy, increased the processing removal amount.This is that then, irradiated near-infrared laser is absorbed by contrary braking radiation because pass through UV laser at transparent body surface generation free electron plasma.At this moment, because near-infrared laser also is absorbed by contrary braking radiation except Multiphoton Absorbtion, therefore, compare with the situation of only shining near-infrared laser, the uptake of energy increases, and result has improved removal working (machining) efficiency (removing processing volume/irradiation energy).Improve the time delay of removing working (machining) efficiency and decide with the relaxation time of electronics-grating (grid), be about below 100ps.
The ratio of the power of the power by changing near infrared the first laser and the second laser of UV can make the characteristic optimization of the processing department of expection.Change in the situation of this power proportions, rotate Polarizer 3 and control the conversion efficiency of nonlinear optics crystalline element, and then can control the energy ratio of two wavelength.
[embodiment]
With the titanium sapphire crystallization as laser medium, the wavelength that generation is in the near infrared region is that 780nm, pulse width are the first following laser of 100ps, in addition, use nonlinear crystal BBO to produce 3 times of the double one-tenth of frequency, be in the wavelength in UV district and be the second laser of 260nm.Give by making the first laser the time delay that is later than the second Ear Mucosa Treated by He Ne Laser Irradiation by roundabout light path.And, shine soda-lime glass after scioptics optically focused.If the first laser pulse is 15 μ J, the second laser pulse is 10 μ J.
The laser medium of the first generating device of laser can also use the er-doped fiber, mixes the ytterbium fiber, Nd:YAG crystallization, Nd:YVO except titanium sapphire crystal (centre wavelength is 780nm)
4Crystallization, Nd:YLF crystallization etc.
Fig. 2 shows the dependence of the removal processing volume of the transparent body to time delay.Transverse axis is that the first laser (wavelength 780nm) is with respect to the irradiation time delay of the second laser (wavelength is 260nm) in the figure.The longitudinal axis is the removal processing volume of the every pulse of laser.But the removal processing volume of 260nm+780nm is the removal processing volume of the present embodiment.The removal processing volume of 260nm is the removal processing volume in independent irradiation the first laser (wavelength is 780nm) situation for the removal processing volume of the removal processing volume in independent irradiation the second laser (wavelength is 260nm) situation, 780nm.When giving time delay, the removal of the every pulse of laser processing volume has increased.That is, when postponing that approximately 1ps is above, the removal processing volume of every pulse energy is increased to removes more than 3 times of volume when shining simultaneously.That is, compare with the situation of the transparent body being shone respectively each laser and obtained the high working (machining) efficiency more than 3 times.In addition, show in order to obtain maximum removal working (machining) efficiency, exist optimum time delay.
Fig. 3 shows the first laser-transmitting rate to the dependence of time delay.In the figure, transverse axis is that the first laser (wavelength is 780nm) is with respect to the time delay of the second laser (wavelength is 260nm).In addition, the longitudinal axis is the transmission light quantity of the first laser, is the relative value during with respect to independent irradiation the first laser.Transmissivity reduces when giving time delay.The time delay that transmissivity reduces is identical with the time delay that described removal working (machining) efficiency increases.The reduction of this first laser-transmitting rate is very important the semiconductor device of the transparent body with film-form etc. is added man-hour, has reduced the damage as the substrates such as semiconductor of substrate.That is, the application of the invention is removed and to be added man-hour the various devices take semiconductor as representative being carried out film, can improve working (machining) efficiency, and can realize reducing the high-quality processing to the substrate injuries such as semiconductor of substrate.
Utilizability on industry
As the example of applying flexibly of the present invention; except the removal processing of the transparent protective film of the component of the conducting ring of the removal processing of the dielectric films such as low-k film that are used for semiconductor device, the processing that is used for the ELD of the display unit such as liquid crystal, the tediously long property of silicon chip semiconductor memory circuit, in addition, be also effective for the meticulous and processing that heat affecting is few under the inner removal processing situation of the layer that carries out the multi-ply construction electronic component from the surface.Also be applicable to form at the upper face of component as protective layer finishing, the correction processing of LCD display board, the correction processing of PDP display unit, the function finishing of circuit substrate and the laser accurate processing of other semiconductor substrates of the capacitor, resistance, inductance etc. of non-active layer.In high density integrated circuit having is made, because the yield rate of the microminiaturization of working width, the minimizing that thing is removed in processing etc. and product improves, thereby can reduce the manufacturing cost of electronic unit.In addition, even be also effective in the processing of the hole of the semiconductor device substrates such as quartz, sapphire.
Claims (7)
1. based on the processing method of laser, the first laser that has the first wavelength by irradiation is processed workpiece with the second laser with second wave length, wherein, second wave length is the first wave subharmonic that grows tall, described workpiece is the described hyaline layer part of the object that is made of substrate and hyaline layer, described hyaline layer is formed at least a portion of substrate surface and is transparent with respect to the first wavelength at least, described method has the damage of comparing higher working (machining) efficiency and alleviating substrate with each laser of independent irradiation, and described method comprises:
Produce the step of the first laser, described the first laser is ultrashort pulse;
The part of described the first laser energy is transformed into the step of the second laser, described the second laser is ultrashort pulse;
More than giving 1ps to the first laser with respect to the second laser and the step of the time delay below 100ps;
Step with the first laser and the second laser optically focused on coaxial;
To as the surface of the described hyaline layer of workpiece or the irradiation of internal alignment focal point by the step of the first laser of optically focused and the second laser.
2. the processing method based on laser as claimed in claim 1, the first wavelength is for surpassing the wavelength of 500nm, and second wave length is the following wavelength of 500nm.
3. the processing method based on laser as claimed in claim 1 or 2, described hyaline layer is insulator.
4. the processing method based on laser as claimed in claim 1 or 2, described substrate is semiconductor substrate.
5. laser processing device is partly processed the described hyaline layer of the object that is made of substrate and hyaline layer, and described hyaline layer is formed at least a portion of substrate surface, and described device comprises:
Generating device of laser, it produces the first laser, and described the first laser is the ultrashort pulse with first wavelength, and wherein said hyaline layer is transparent with respect to the first wavelength at least;
Wavelength converting device, its part with described the first laser energy is transformed into the second laser, and described the second laser is to have the grow tall ultrashort pulse of second wave length of subharmonic of first wave;
Postpone generating means, more than it gives 1ps to the first laser with respect to the second laser and the time delay below 100ps;
Beam condensing unit, it is with the first laser and the second laser optically focused on coaxial; And
Aim at the device of focal point, to surface or the internal alignment focal point as the described hyaline layer of workpiece,
Wherein, described device has the damage of comparing higher working (machining) efficiency and alleviating substrate with each laser of independent irradiation.
6. laser processing device as claimed in claim 5, the first wavelength is for surpassing the wavelength of 500nm, and second wave length is the following wavelength of 500nm.
7. laser processing device as described in claim 5 or 6, described delay generating means is realized by the first laser being given the optical path length longer than the second laser.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007-119497 | 2007-04-27 | ||
| JP2007119497A JP5103054B2 (en) | 2007-04-27 | 2007-04-27 | Laser processing method and laser processing apparatus |
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| Publication Number | Publication Date |
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| CN101293307A CN101293307A (en) | 2008-10-29 |
| CN101293307B true CN101293307B (en) | 2013-06-19 |
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| JP (1) | JP5103054B2 (en) |
| KR (1) | KR20080096400A (en) |
| CN (1) | CN101293307B (en) |
| TW (1) | TWI413561B (en) |
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| JPS5629323A (en) * | 1979-08-17 | 1981-03-24 | Nec Corp | Two-wavelength laser surface treating apparatus |
| JP3778436B2 (en) * | 2002-03-05 | 2006-05-24 | 有限会社フィルブリッジ | Wafer polishing equipment |
| JP4306265B2 (en) * | 2003-02-04 | 2009-07-29 | 株式会社ニコン | Solid-state imaging device |
-
2007
- 2007-04-27 JP JP2007119497A patent/JP5103054B2/en not_active Expired - Fee Related
-
2008
- 2008-04-22 KR KR1020080037273A patent/KR20080096400A/en not_active Application Discontinuation
- 2008-04-24 CN CN2008100946179A patent/CN101293307B/en not_active Expired - Fee Related
- 2008-04-25 TW TW097115173A patent/TWI413561B/en not_active IP Right Cessation
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003205383A (en) * | 2001-12-28 | 2003-07-22 | Nidek Co Ltd | Laser machining device |
| JP2005178288A (en) * | 2003-12-22 | 2005-07-07 | Shibuya Kogyo Co Ltd | Method and device for cutting brittle material |
| JP2006071855A (en) * | 2004-09-01 | 2006-03-16 | Sumitomo Heavy Ind Ltd | Optical device |
| JP2006247665A (en) * | 2005-03-08 | 2006-09-21 | Sumitomo Heavy Ind Ltd | Method and apparatus for laser beam machining |
| CN1853840A (en) * | 2005-04-27 | 2006-11-01 | 彩霸阳光株式会社 | Plate cutting method and laser processing device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI413561B (en) | 2013-11-01 |
| JP2008272794A (en) | 2008-11-13 |
| KR20080096400A (en) | 2008-10-30 |
| CN101293307A (en) | 2008-10-29 |
| JP5103054B2 (en) | 2012-12-19 |
| TW200936284A (en) | 2009-09-01 |
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