200934280 九、發明說明： 【發明所屬之技術領域】 本發明係有關於用於加熱CVD裝置、蝕刻裝置等的半 導體製造裝置的腔室、晶圓等的被處理物體的搬送通路或 處理氣體等的給排氣管等的内部或壁面而利用的適宜的加 熱裝置。 【先前技術】 例如，在CVD裝置或蝕刻裝置等的半導體製造裝置 中，配置晶圓於處理腔室内，藉由將此晶圓在高溫環境中 暴露於反應氣體或電衆等，施加所希望的成膜處理或姓刻 處理於晶圓。此類處理之際，流動於腔室内的處理氣體或 反應副生成物係，藉由壓力和溫度的關係（昇華曲線）將氣 體和固體的兩相昇華變化，但在從氣體昇華變化為固體的 情形方面，副生成物以固體析出、而附著在腔室内或排氣 瘳f等的昇華溫度以下的壁面。此結果，配管藉由副生成物 而被阻塞的情形並不佳。 為了避免或抑制此類副生成物的析出/堆積、以及均一 且乾淨地進行對於晶圓#成膜處理或钱刻處a，腔室或配 管等的溫度係有必要維持在比較均一的高溫狀態，且將此 正確地維持管理。 習知在為了將腔室等的内部維持在高溫方面例如， 裝著加熱器於腔室等的外侧等的方案被採用（例如，參考日 本專利出願公開2003-27240號公報^然而，在配置加熱 。 203〇-l〇〇32-PF;Tungming 5 200934280 °於腔至外側的習知方法中，一邊均一地加熱腔室内壁、 —邊施加一定溫度差而加熱是困難的，又，正確地維持管 理腔室内部或内壁的溫度是困難的。 因此’在腔室或配管的内部沿著内壁配置加熱單元， 藉此均一且效率佳、以及正確地控制腔室内溫度而管理的 方法被提出（參考PCT國際公開W〇2〇〇4/1〇51〇3公報）。藉 由此裝置的話，可將腔室或配管等的溫度在某一程度的高 ❹ 下維持、管理於均一的狀態，和目前為止的裝置比較、 可抑制副生成物的析出/堆積。 【發明内容】 [發明所欲解決之問題] 然而，例如，在如專利文獻2(PCT國際公開w〇2〇〇4/ 105103公報）所揭露的習知裝置中’加熱腔室内部等的加 熱裝置係，埋設電阻發熱體於表面構造構件的内部，將供 ® 給電力至此電阻發熱體的導線經由細直徑的配管等導出至 外部的構成。發熱電路被配設於堅固的外層或間隔壁（也有 總稱為外壁的情形）的内部’ χ ’此外壁係，由於所謂加熱 裝置被配設於腔室内的特性，為耐壓性或耐熱性等高的堅 固的物件。外壁構件係藉由熔接等被堅強地接合等、發熱 電路被配設於内部般被形成。 在此類構成的加熱裝置中，在包含電阻發熱體及用以 供給電力至電阻發熱體的導線等的發熱電路，有切斷等的 故障產生的情形。故障在CVD裝置等的腔室的加熱裝置產 2030-10032-PF;Tungming 6 200934280 生的話由於在晶圓處理時無法維持腔室内的溫度於適當 ’皿度必須立刻停止裝置進行修理。然而，在此類的基板 處里裝置中，在停止裝置而等待腔室内的溫度下降、進行 故障場所的修理後再度升溫至晶圓可處理溫度方面，需要 非常長的時間。因此，裝置的運轉率大大地降低。 在具有上述般的外壁構造的加熱裝置中，將切斷 等的故障產生的場所特定而修復係非常麻煩而需要勞力和 φ ’的作業纟實際上，藉由加熱裝置的交換而處理的情 形多此類情形也相同，不得不依據所謂裝置停止、溫度 下降等待、交換、溫度上升等待的順序，裝置的運轉率大 大地降低》 又，結果，經過長時間、半導體製造線停止，半導體 裝置的生產效率下降、導致生產成本的增大。 本發明係有鑑於此類問題，其目的係，提供即使在基 板處理裝置中加熱腔室等的加熱裝置中、故障發生的情 _ 形、可不停止基板處理裝置的運轉而繼續基板處理的加教 裝置。 … [解決問題之技術裝置] 為了解決上述問題，本發明的加熱裝置係，為被配置 在任意的處理腔室、搬送通路或管的内部的加熱裝置，具 有分別被絕緣的複數個發熱體、夾持上述複數個發熱體以 被覆該發熱體的周圍的外壁構件、供給電力至上述發熱體 且分別與上述複數個發熱體對應的複數個通電裝置作為特 徵。 · 2030-l〇〇32-PF;Tungming 7 200934280 根據此類構成的加熱裝置的話，因為具備複數個所謂 的發熱艘以及供給電力$句淑， 刀至这發熱體的通電裝置的複數個發 熱電路’所以即使在任一個發熱電路中、切斷等的故障產 生的情形，可利用其他發熱電路而繼續處理腔室等的加 熱’不需停止裝置的運轉。亦即，即使在基板處理裝置中、 加熱腔室等的加熱裝置中、故障產生的情形、可不停止基 板處理裝置的運轉而繼續基板處理的加熱裝置。 肖佳的是本發明的加熱裝置係，上述複數個發熱體分 別為面狀發熱體，被層積而在上述外壁構件内被收容作為 特徵。 根據此類構成的加熱裝置的話，藉由複數個發熱體、 可從完全相同的發熱區域在相同的溫度分佈下加熱處理腔 室等的對象。 又，較佳的是本發明的加熱裝置係，上述複數個發熱 體在同-面上被配置而在上述外壁構件内㈣容作為特 ❹徵。 根據此類構成的加熱裝置的話，藉由和具備單一發熱 體的裝置相同的熱容量，可構成具有複數個發熱體的加熱 裝置，可使裝置小型化。 又，較佳的是本發明的加熱裝置係，上述複數個發熱 體分別為將上述面狀發熱體以筒狀形成的發熱體，以同心 在内周侧及外周侧被層積而在筒狀的上述外壁構件的壁面 内被收容作為特徵。 根據此類構成的加熱裝置的話，在筒狀的加熱裝置 2030-10032-PF；Tungming 8 200934280 令、，藉由複數個發熱體、可從完全相同的發熱區域在相同 的溫度分佈下加熱處理腔室等的對象。 又，較佳的是本發明的加熱裝置係，上述複數個發熱 體分別為將上述面狀發熱體以平板狀形成的發熱體，在將 該平板面重疊的方向被層積而在平板狀的上述外壁構件的 壁面内被收容作為特徵。 根據此類構成的加熱裝置的話，在平板狀的加熱裝置。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 A suitable heating device for use in the interior or wall of an exhaust pipe or the like. [Prior Art] For example, in a semiconductor manufacturing apparatus such as a CVD apparatus or an etching apparatus, a wafer is placed in a processing chamber, and the wafer is exposed to a reaction gas or a power source in a high-temperature environment, and the desired one is applied. Film formation or surname processing on the wafer. At the time of such treatment, the process gas or the reaction by-product system flowing in the chamber changes the two phases of the gas and the solid by the relationship of pressure and temperature (sublimation curve), but changes from gas sublimation to solid. In the case, the by-product is deposited as a solid and adheres to a wall surface below the sublimation temperature of the chamber or the exhaust gas f or the like. As a result, the piping is blocked by the by-products, which is not preferable. In order to avoid or suppress the precipitation/stacking of such by-products, and to uniformly and cleanly perform the wafer formation process or the engraving, the temperature of the chamber or piping, etc., must be maintained at a relatively uniform high temperature state. And this will be properly managed. In order to maintain the inside of the chamber or the like at a high temperature, for example, a heater is attached to the outside of the chamber or the like, for example, and the like. For example, refer to Japanese Patent Laid-Open Publication No. 2003-27240. 203〇-l〇〇32-PF; Tungming 5 200934280 ° In the conventional method of cavity to the outside, it is difficult to uniformly heat the inner wall of the chamber while applying a certain temperature difference, and it is properly maintained. It is difficult to manage the temperature inside or inside the chamber. Therefore, a method of arranging a heating unit along the inner wall inside the chamber or piping, thereby managing uniform and efficient, and correctly controlling the temperature inside the chamber is proposed (refer to PCT International Publication No. 4〇〇4/1〇51〇3). With this device, the temperature of a chamber or a pipe can be maintained and managed in a uniform state to a certain degree, and The present invention compares and suppresses the deposition/stacking of by-products. [Disclosure] [Problems to be Solved by the Invention] However, for example, in Patent Document 2 (PCT International Publication No. 4〇〇4/105103 In the conventional device disclosed in the above, the heating device such as the inside of the heating chamber is embedded in the inside of the surface structural member, and the wire for supplying power to the resistance heating element is led to the small diameter pipe or the like. External structure. The heat generating circuit is disposed in the inner layer of the solid outer layer or the partition wall (also referred to as the outer wall in general). The wall system is a pressure-resistant property because the heating device is disposed in the chamber. A strong object having a high heat resistance, etc. The outer wall member is formed by being strongly joined by welding or the like, and the heat generating circuit is disposed inside. In the heating device of such a configuration, the electric resistance heating body is included In a heating circuit that supplies electric power to a wire such as a resistance heating element, there is a case where a failure such as a cutting occurs. The failure occurs in a heating device of a chamber such as a CVD device, and the heating device produces 2030-10032-PF; Tungming 6 200934280 During the round processing, the temperature in the chamber cannot be maintained at the proper 'degree of the dish. The device must be stopped immediately for repair. However, in the device at the substrate, the device stops. The apparatus waits for a temperature drop in the chamber, and repairs the faulty place and then raises the temperature to the wafer processable temperature, which requires a very long time. Therefore, the operation rate of the apparatus is greatly reduced. Heating with the above-described outer wall structure In the device, the location where the failure occurs is specified, and the repair is very troublesome, and labor and φ' work are required. Actually, the situation is handled by the exchange of the heating device. In the order of device stop, temperature drop wait, exchange, and temperature rise wait, the operation rate of the device is greatly reduced. As a result, after a long period of time, the semiconductor manufacturing line is stopped, the production efficiency of the semiconductor device is lowered, and the production cost is increased. . The present invention has been made in view of such a problem, and an object of the present invention is to provide a heating device that heats a chamber or the like in a substrate processing apparatus, and in which a failure occurs, and the substrate processing can be continued without stopping the operation of the substrate processing apparatus. Device. [Technical device for solving the problem] In order to solve the above problem, the heating device of the present invention is a heating device disposed in an arbitrary processing chamber, a transfer path, or a tube, and has a plurality of heating elements that are insulated, The plurality of heat generating bodies are sandwiched between the outer wall members surrounding the heat generating body and the plurality of power generating devices that supply power to the heat generating body and respectively correspond to the plurality of heat generating bodies. · 2030-l〇〇32-PF; Tungming 7 200934280 According to the heating device of this type, there are a plurality of so-called heating boats and a plurality of heating circuits for supplying electric power to the heating device of the heating element. Therefore, even in the case where a failure such as a cut in any of the heat generating circuits occurs, the heating of the chamber or the like can be continued by using another heat generating circuit, and the operation of the device is not required. That is, even in a substrate processing apparatus, a heating apparatus such as a heating chamber, or a failure, a heating apparatus that can continue the substrate processing without stopping the operation of the substrate processing apparatus. In the heating device according to the present invention, the plurality of heat generating bodies are each a planar heat generating body, and are stacked and housed in the outer wall member as a feature. According to the heating device of such a configuration, a plurality of heat generating bodies can heat the processing chamber or the like from the same heat generating region under the same temperature distribution. Further, preferably, in the heating apparatus of the present invention, the plurality of heat generating bodies are disposed on the same surface and are contained in the outer wall member (four). According to the heating device of such a configuration, a heating device having a plurality of heating elements can be constructed by the same heat capacity as a device having a single heating element, and the device can be downsized. Further, in the heating apparatus of the present invention, each of the plurality of heat generating elements is a heat generating body in which the planar heat generating body is formed in a cylindrical shape, and is concentrically laminated on the inner peripheral side and the outer peripheral side in a cylindrical shape. The wall surface of the outer wall member is housed as a feature. According to the heating device of such a configuration, in the cylindrical heating device 2030-10032-PF; Tungming 8 200934280, by a plurality of heating elements, the processing chamber can be heated at the same temperature distribution from the same heat generating region. Object such as room. Further, in the heating apparatus of the present invention, each of the plurality of heat generating elements is a heat generating body in which the planar heat generating body is formed in a flat shape, and is laminated in a direction in which the flat surface is superposed. The wall surface of the outer wall member is housed as a feature. According to the heating device of such a configuration, in the form of a flat heating device
中’藉由複數個發熱體、可從完全相同的發熱區域在相同 的溫度分佈下加熱處理腔室等的對象。 又，較佳的是本發明的加熱裝置係，上述複數個發熱 體的各發熱體對於加熱對象的上述處理腔室、上述搬送通 路或上述給職管的内部的溫度分佈即使在任—發熱體發 熱時成為相同般發熱作為特徵。 根據此類構成的加熱裝置的話，在任一發熱電路中、 切斷等的故障產生、剎爾甘μ以# ± 引用其他的發熱電路、繼續加熱、繼 續基板處理的情形，可在完全相同的溫度環境繼續處理， 繼續適當料板處自，可保持處理、结果的均-性。 又’較佳的是本發明的加熱裝置係，在有關上述複數 個發熱體中的任-發熱體的電路、故障發生的情形，對於 上述複數個發熱體中的其他發熱體、上述電力被供給、該 發熱體的發熱被進行作為特徵。 根據此類構成的加執ΓΟ ^ . …衮置的話，因為在任一發熱電路 中、故障產生的情形、利用饮灿从改血泰油 、 才J用其他的發熱電路、可繼續處理 腔室等的加熱，所以可提供理鋏奄古 · J捉供運轉率尚且仏賴性高的加熱裝 2 030-10032-PF;Tungmi^ig 9 200934280In the middle, a plurality of heat generating bodies can heat the processing chamber or the like from the same heat generating region under the same temperature distribution. Further, in the heating apparatus of the present invention, it is preferable that the temperature distribution of each of the plurality of heat generating elements in the processing chamber, the transfer path, or the inside of the feed tube to be heated is generated even in any heat generating body. It becomes a feature of the same heat. According to the heating device of such a configuration, in any of the heat generating circuits, a failure such as cutting occurs, and the other heating circuit is referenced by #±, the heating is continued, and the substrate processing is continued, at exactly the same temperature. The environment continues to be treated, and the proper material board is maintained, and the treatment and the uniformity of the results can be maintained. Further, in the heating device according to the present invention, in the case where a circuit or a failure of any of the plurality of heat generating elements is generated, the electric power is supplied to the other heat generating elements of the plurality of heat generating elements. The heat generation of the heating element is performed as a feature. According to the configuration of such a configuration, it is possible to continue processing the chamber, etc., in any of the heating circuits, in the event of a malfunction, in the use of drinking tea, in the use of other heat-generating circuits. The heating, so it can provide the heating equipment 2 030-10032-PF with high operating rate and high reliability; Tungmi^ig 9 200934280
又，較佳的是本發明的加埶 ^ ^ ^ ^ “、、裝置係，上述複數個發埶 體的各發熱體的發熱量相同作為特徵 n後数個發，、，、 根據此類構成的加熱裝置的紅 葙赵徊恭舳抽并油iL 网話’可實現將相同功能的 複數個發熱體並聯地具備的加埶 η搂认n» a …裝置’可將各發熱體為了 同樣的目的則而藉由同樣的控制方法等使用而有效。 又，較佳的是本發明的加埶 ❹ “、' I置係，上述複數個發埶 體的各發熱體的發熱量不同作為特徵。 … 根據此類構成的加熱裝晋 从“ 話，可實現具備功能不同 的複數個發熱體的加熱裝置， 了提供將複數個發熱體互補 地使用且將所希望的環境或目 旳效率佳地實現而達成的加 熱裝置。 【實施方式】 有關本發明的一實施例’參考第1圖〜第3圖而說明。 ❹在本實施例中’說明作為利用於CVD(Cheinicai v學r Deposition’化學氣相沉積）等的處理的基板處理裝置、將 具備有關本發明的加熱裝置的基板處理裝置作為例子表示 而說明本發明。 第1圖係為此基板處理裝置丨的主要部分剖面圖。 如第1圖所示般’基板處理裝置丨係，收容處理對象（被 處理物體）的半導體晶圓w於内部空間（腔室内部空 間）13 ’具有將晶圓W暴露在所希望的環境而施加所希望的 處理的處理腔室10、在腔室内部空間13内的處理對象的 2030-10032-PF;Tungming 10 200934280 曰日圓w被載置的支持自2〇、將處理對象的晶圓w在腔室内 部空間13搬入搬出用的晶圓搬送管30、將處理氣體等供 °至腔至内°卩空間13用的給氣管4 0、將腔室内部空間13 的氣體排氣用的排氣管50、以及加熱腔室内部空間13等 的有關本發明的加熱單元101、201、202、301、401及501。 處理腔室10係，具有上部被開口的有底圓筒形狀的容 器的腔室本體11、以及封閉其上部開口的蓋部丨2。 ❹ 蓋部12係’藉由腔室本體11的上部的未圖示連結部， 將其上部開口可自由開閉地被連結。將蓋部12經由〇形環 18設於其間而載置於腔室本體u的上緣面上，藉由未圖 示的固定裝置、鎖緊安裝於腔室本體u而固定設置，腔室 本體11的上部開口被封閉，腔室内部空間13係成為密封 空間。 在處理腔室10的内部（腔室内部空間13)的大略中 央’處理對象的晶圓W被載置的支持台20被設置。支持台 參 20係，藉由通過處理腔室10的底部開口 14的支持轴21 而可上下移動及迴轉移動地被支持。支持轴21係，被連結 至未圖示的外部的驅動機構，被上下移動及迴轉移動。在 支持轴21通過的處理腔室10的底部開口 14方面，例如， 未圖示的磁性流體密封裝置等被配設，藉此處理腔室1〇的 内部（腔室内部空間13)和外部被密封。 在腔室本體11的侧壁方面，在腔室内部空間13將日曰 圓W搬入及搬出用的剖面矩形的開口 15被形成。在晶 送用開口 1 5方面，在腔室本體11的外部，經由0形壤31 2030-10032-PF;Tungming .11 200934280 設於其間、矩形筒狀的晶圓搬送管3〇被連接。 在蓋部12的中央部方面，在腔室内部空間13將處理 氣體導入用的圓形剖面的給氣口 16被形成。在給氣口 16 方面’在處理腔室1 0的外部’經由〇形環41設於其間、 圓環狀的給氣管40被連接。又，在給氣口 16的内側方面， 以反應氣體（處理氣體）被均一地供給至被載置於支持台2〇 的晶圓w的全體的方式，喷氣頭42被配設。在喷氣頭42 ❹ 的支持台2〇的侧的表面方面，將氣體均一地流動於被載置 於支持台20的晶圓W的上面用的開口 43被形成。 又’在腔至本體11的側壁方面，將腔室内部空間13 的氣體排出用的排氣口 17被形成。在排氣口 17方面，在 處理腔室1 〇的外部，經由〇形環51設於其間、圓環狀的 排氣管50被連接。不被連接於排氣管5〇的排氣口 I?的側 的端部係，被連接至未圖示的渦輪分子幫浦（TMp)等的排氣 裝置’將腔室内部空間13抽真空之際、或在腔室内部空間 φ 13使所希望的反應氣體被循環而進行所希望的處理之際， 將腔室内部空間13的氣體排氣。 在處理腔室10的内部方面，沿著其側壁的内周面，將 腔室内部空間13維持在所希望的溫度用的有關本發明的 加熱單元101、201、及202被配設。又，在晶圓搬送管3〇、 給氣管40及排氣管50的内部方面，分別沿著其内周面， 將各管的内部維持在所希望的溫度用的加熱單元3〇1、 401、及501被配設。 以下更參考第2圖以及第3圖說明有關本發明的這些 2030-l〇〇32-PF;Tungming 12 200934280 加熱單元。 —加熱單元101係'，如第1圖所示般，被配設於處理腔 至1〇的腔室本體11的内側’和後述的加熱單元201及加 熱皁疋2〇2 一起、將處理腔室的腔室内部空間13加熱 至所希望的溫度。加教嚴无丨^丨及 熟单70 101係’具有沿著處理腔室10 的内周面的壁面、其上下兩戚忐去 卜端成為開口狀態的圓筒形狀的 加熱裝置。Further, it is preferable that the heat generating body of the plurality of hairpins has the same calorific value as the feature n after the twisting of the present invention, and, according to the composition The heating device of the red 葙 葙 徊 徊 徊 舳 并 并 并 油 油 油 i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i 可 可 » » » » » The purpose is to be effective by the same control method, etc. Further, it is preferable that the twisting of the present invention is "I", and the heat generation amount of each of the plurality of hairpins is different. ... According to the heating device of such a configuration, it is possible to realize a heating device having a plurality of heating elements having different functions, and to provide a plurality of heating elements to be used complementarily and to achieve a desired environment or efficiency efficiently. The heating device is achieved. [Embodiment] An embodiment of the present invention will be described with reference to Figs. 1 to 3. Fig. ' In the present embodiment, 'described as CVD (Cheinicai v learning r Deposition' chemical gas The present invention will be described with reference to a substrate processing apparatus for processing such as phase deposition, and a substrate processing apparatus including the heating apparatus according to the present invention. Fig. 1 is a cross-sectional view showing the main part of the substrate processing apparatus 。. In the case of the substrate processing apparatus, the semiconductor wafer w containing the processing target (object to be processed) is placed in the internal space (chamber interior space) 13' to expose the wafer W to a desired environment. The processing chamber 10 of the process, the 2030-10032-PF of the processing object in the space 13 inside the chamber; the support of the Tungming 10 200934280 曰 yen w is placed from 2〇, The wafer w to be processed is carried into the wafer transfer tube 30 for carrying out the inside of the chamber, and the supply pipe or the like is supplied to the air supply pipe 40 for the space to the inner space 13 and the space 13 inside the chamber. The exhaust pipe 50 for gas exhaust, and the heating units 101, 201, 202, 301, 401, and 501 according to the present invention, such as the space 13 inside the heating chamber. The processing chamber 10 has an upper portion that is opened. The chamber body 11 of the bottom cylindrical container and the lid portion 2 that closes the upper opening thereof. The lid portion 12 is freely opened by the unillustrated connecting portion of the upper portion of the chamber body 11. The lid portion 12 is connected to the upper edge surface of the chamber body u via the ring-shaped ring 18, and is fixed to the chamber body u by a fixing device (not shown). The upper opening of the chamber body 11 is closed, and the chamber interior space 13 is a sealed space. The wafer W to be processed is placed in the center of the processing chamber 10 (the interior of the chamber interior space 13). Support table 20 is set. Supports the platform 20 series, through the processing chamber The support shaft 21 of the bottom opening 14 of the 10 is supported by the vertical movement and the rotation movement. The support shaft 21 is coupled to an external drive mechanism (not shown), and is moved up and down and rotated. In terms of the bottom opening 14 of the processing chamber 10, for example, a magnetic fluid sealing device or the like (not shown) is disposed, whereby the inside of the processing chamber 1 (the chamber interior space 13) and the outside are sealed. In the side wall of the chamber 11, the opening 15 having a rectangular cross section for loading and unloading the corrugated circle W is formed in the chamber interior space 13. In the crystal transfer opening 15, the outside of the chamber body 11 is formed via a 0 shape. Soil 31 2030-10032-PF; Tungming .11 200934280 A wafer transfer tube 3 that is disposed in a rectangular tube shape is connected thereto. In the central portion of the lid portion 12, an air supply port 16 having a circular cross section for introducing a processing gas into the chamber interior space 13 is formed. In the air supply port 16, the outer portion of the processing chamber 10 is disposed between the annular air supply pipes 40 via the cymbal ring 41. Further, in the inner side of the air supply port 16, the reaction gas (process gas) is uniformly supplied to the entire wafer w placed on the support table 2, and the air jet head 42 is disposed. On the surface of the side of the support base 2 of the air jet head 42 ,, a gas is uniformly formed by flowing an opening 43 for the upper surface of the wafer W placed on the support table 20. Further, in terms of the cavity to the side wall of the body 11, an exhaust port 17 for discharging the gas inside the chamber space 13 is formed. In the exhaust port 17, the annular exhaust pipe 50 is connected to the outside of the processing chamber 1 via the ring 51. The end portion of the exhaust port I that is not connected to the exhaust pipe 5A is connected to an exhaust device such as a turbo molecular pump (TMp) (not shown) to evacuate the chamber space 13 At the time of the chamber φ 13 and the desired reaction gas is circulated to perform a desired treatment, the gas in the chamber interior space 13 is exhausted. In the interior of the processing chamber 10, the heating units 101, 201, and 202 according to the present invention for maintaining the indoor space 13 at a desired temperature along the inner peripheral surface of the side wall are disposed. Further, in the inside of the wafer transfer tube 3, the air supply tube 40, and the exhaust tube 50, the heating unit 3〇1, 401 for maintaining the inside of each tube at a desired temperature along the inner peripheral surface thereof And 501 are assigned. The 2030-l 32-PF; Tungming 12 200934280 heating unit relating to the present invention will be described below with reference to Figs. 2 and 3. - the heating unit 101 is 'as shown in Fig. 1, the inside of the chamber body 11 disposed in the processing chamber to 1", together with the heating unit 201 and the heating sapon 2 2 described later, the processing chamber The chamber interior 13 of the chamber is heated to the desired temperature. It is a cylindrical heating device having a wall surface along the inner circumferential surface of the processing chamber 10 and a top and bottom sides of which are opened.
，具有内殼111、 第2圖係此加熱單元1〇1的剖面圖 如第2圖所示般，加熱單元1〇1係 第二面狀發熱體132、第 外殼121、第一面狀發熱體i3l -面狀發熱體用導線14卜第二面狀發熱體用導線142、導 線導出管150及0形環151。 内殼111係，為以金屬製的圓筒形狀的構件。在内殼 111的外周面方面，橫跨其周方向的全周、以帶狀凹陷的 凹泮111a被形成。在此凹部ula，第一面狀發熱體 及第二面狀發熱體132被收容。 外殼121係，和内殼ill相同為以金屬製的圓筒形狀 的構件。外殼121係，在内殼111的外周侧方面，以封閉 内殼111的凹部111a的方式被配設。藉此將第一面狀發熱 體131及第二面狀發熱體132收容於内殼hi的凹部in a。 第一面狀發熱體131及第二面狀發熱體132係，其周 圍分別被電性絕緣的電阻發熱體。第一面狀發熱體1 31及 第二面狀發熱體132係’如圖示般被重合（在侧面被層 積），被收容於内殼111的凹部111a。第一面狀發熱體131 2030-10032-PF;Tungming 13 200934280 及第二面狀發熱體132係、’例如，為由柔軟材料被形成的 薄板狀的面狀發熱體，藉由將此沿著内殼U1的外周面實 曲而配設於内殼111的全周，結果為以圓筒形態被收容於 内殼111的凹部Ula的構成也可。又，或者是從最初作為 配合内殼111的外周面（凹面llla的底面）的曲面的曲率的 圓筒狀或剖面圓弧形狀的構件而形成，將此配設於内殼m 的凹部11 la也可。無論如何，以同心被重合的各圓筒形態 ❹ 的第一面狀發熱體131及第二面狀發熱體ι32係，在内殼 111的凹部llla的表面（底面）和外殼121的内周面之間被 夾持，被收容於此内部空間》 内殼111和外殼121係’在相當於内殼U1的凹部1Ua 的緣的接觸面被接合’如上述般’形成根據内殼的凹 部111 a的内部空間112。 結果’第一面狀發熱體131及第二面狀發熱體132係， 成為藉由内殼111和外殼121被覆蓋而在加熱單元ι〇1的 ❿ 壁面被埋設的狀態，在加熱單元101被設置於腔室内部空 間13之際，被暴露於被供給至腔室内部空間13的處理氣 體等也被防止。 又’内殼111和外殼121的接合係，藉由熔接或原料 接合等進行也可，經由〇形環設於其間等、藉由螺絲、螺 栓或夹板等接合也可。 在第一面狀發熱體131及第二面狀發熱體132方面， 分別作為供給電力用的一對導線的第一面狀發熱體用導線 141及第二面狀發熱體用導線〗42被連接。第一面狀發熱 2030-10032-PF;Tungming 14 200934280 體用導線141和第二面狀發熱體用導線142係，一起在加 熱單元ιοί的上緣的所定場所經由〇形環151設於其間、 經由被連接的導線導出管15Q、被導出至加熱單元m的 外部。 第面狀發熱體用導線141和第二面狀發熱體用導線 142係，被連接至分別獨立地控制的完全分別系統的電力 供給電路（通電裝置）而使用。因此，經由第—面狀發熱體 ❹用導線14卜電力被供給的第一面狀發熱體13卜以及經由 卜面狀發熱體用導線142、電力被供給的第二面狀發熱 體132係，其發熱量分別被獨立地控制。 在基板處理裝置1中，此類構成的加熱單元101係， 如第1圖所不般，被配設於處理腔室1〇的腔室内部空間 13。加熱單元1〇1的導線導出管15〇係經由被設置於蓋 部12的導線導出管通過口 19a、更被引出至處理腔室1〇 的外部。 φ 又，在處理腔室10方面，使晶圓出入用的晶圓搬送用 開口 1 5以及晶圓搬送管3〇被設置。經由此晶圓搬送管3〇、 對於加熱單70 1〇1的内部的支持台20、晶圓被適當地搬入 及搬出般’在加熱單元1〇1，開口部115也被設置。開口 部115係，被設置在對應於處理腔室1〇的晶圓搬送用開口 15的位置。 同樣地’在處理腔室10方面，將腔室内部空間13的 虱體排氣用的排氣口〗7以及排氣管5〇被設置，經由此、 腔室内部空間13的氣體被適當地排氣般，在加熱單元 2030-10032-PF;Tungming 15 200934280 101’開口部116也被設置於對應於處理腔室10的排氣口 17的位置。 又’内殼111及外殼121係，傳熱效率高，藉由對於 處理氣體、具有耐腐蝕性的材料被形成。具體而言，例如， 不銹鋼材（’例如，SUS316)或鋁板材（例如，A5052)為較佳 地’但欽、銘合金、錄姑合金、或由氧化銘、碳化碎、氮 化銘、氮化矽、氧化矽的任一個構成的陶瓷等也可。又， φ 也可藉由被覆（coating)確保耐腐蝕性，作為此情形的被覆 材料’装土（Al2〇3)、Sic、A1N、Si3N4、或 Υ2〇3 等為較佳地。 又，第一面狀發熱體131及第二面狀發熱體132係， 藉由矽膠加熱器、雲母（Hlica)加熱器、陶瓷加熱器或聚醯 亞銨（P〇ly imide)加熱器等的電阻發熱體構成。 加熱單元201係，被配設於處理腔室1〇的蓋部12的 内側’和加熱單元101及後述的加熱單元2〇2 一起、將處 理腔室10的腔室内部空間13加熱至所希望的溫度。加熱 ® 單元201係，封閉上述的加熱單元101的上部開口般被配 設的圓板形狀的加熱裝置。 第3圖係為表示此圓板形狀的加熱單元2〇1的構成的 剖面圖。 加熱單元201係，全體形狀為圓板形狀的加熱裝置， 其基本構成係和上述的加熱單元1〇1相同。 又，加熱單元201係，由於在腔室内部空間13的上部 的蓋部12的内侧有沿著蓋部12的内面被配設的構件在 其中央邛方面，將從喷氣頭42被放出的氣體流動至被載置 2030-10032-PF;Tungming 16 200934280 於支持台20的晶圓W方向用的開口 261被形成。因此，加 熱單元201係，嚴格來說’成為圓環形狀的加熱裝置。 加熱單元201係，具有内殼211、外殼221、第一面狀 發熱體231、第二面狀發熱體232、第一面狀發熱體用導線 241、第二面狀發熱體用導線242、導線導出管250及0形 環25卜 内殼211及外殼221係’為金屬製，開口 212及222 ❹ 被形成於中央部的圓環形狀的構件。其材質等係和上述的 加熱單元101的内殼111及外殼121相同。在内殼211的 外側的面（上側的面）方面，環狀的凹部213被形成。在此 凹部213’第一面狀發熱體231及第二面狀發熱體232被 收容。 第一面狀發熱體231及第二面狀發熱體232係，其周 圍分別被電性絕緣的圓環形態的電阻發熱體，如圖示般被 重合（被層積），被收容於内殼211的凹部213。 〇 内殼211和外殼221係，將内殼211的凹部213的緣 的上端面作為接合面被接合，形成根據内殼211的凹部213 的内部空間214。結果，第一面狀發熱體231和第二面狀 發熱體232係’成為藉由内殼211和外殼221被覆蓋而在 加熱單元201的内部被埋設的狀態，在加熱單元2〇1被設 置於腔室内部空間13之際，被暴露於被供給至腔室内部空 間13的處理氣體等也被防止。 . 又’第一面狀發熱體231及第二面狀發熱體232的材 質等、内殼211和外殼221的接合方法等係，和上述的加 2030-10032-PF;Tungming 17 200934280 熱單元101相同。 在第一面狀發熱體231及第二面狀發熱體232方面， 分別作為供給電力用的一對導線的第一面狀發熱體用導線 241及第二面狀發熱體用導線242被連接。第一面狀發熱 體用導線241和第二面狀發熱體用導線242係，一起在加 熱單元201的上面經由〇形環251設於其間、經由被連接 的導線導出管250、被導出至加熱單元2〇1的外部。 ❹ 第一面狀發熱體用導線241和第二面狀發熱艎用導線 242係，被連接至分別獨立地控制的完全分別系統的電力 供給電路（通電裝置）而使用。因此，經由第一面狀發熱體 用導線241、電力被供給的第一面狀發熱體231、以及經由 第一面狀發熱體用導線242、電力被供給的第二面狀發熱 體232係，其發熱量分別被獨立地控制。 在基板處理裝置1中，此類構成的加熱單元2〇1係， 被配没於處理腔室1〇的蓋部12的内側。加熱單元2〇丨的 〇 導線導出管250係，經由被設置於蓋部12的導線導出管通 過口 19b、更被引出至處理腔室的外部。 在處理腔室10的内部的加熱單元1〇1的下部方面’圓 板形狀的加熱單元2〇2被配設。 加熱單元202係，封閉加熱單元1 〇〗的下部開口般、 沿著腔室本體11的底面被配設的圓板形狀的加熱裝置，和 加熱單兀101及加熱單元2〇丨一起、將處理腔室ι〇的腔室 内部空間13加熱至所希望的溫度。 加熱單元202的構成係，因為和上述加熱單元2〇1實 2030-10032-PF;Tungming 18 200934280 質相同，所以其詳細說明省略。 加熱單元202係，被形成於中央部的開口 262(參考第 1圖）的尺寸為，和在上述加熱單元2〇1中、被形成於中央 部的開口 261不同。The cross-sectional view of the heating unit 1〇1 having the inner casing 111 and the second drawing is as shown in Fig. 2, and the heating unit 1〇1 is the second planar heating element 132, the first casing 121, and the first planar heat generation. The body i3l - the planar heating element wire 14 is the second planar heating element wire 142, the wire lead-out tube 150, and the O-ring 151. The inner casing 111 is a cylindrical member made of metal. In the outer peripheral surface of the inner casing 111, a recess 111a which is recessed in a strip shape is formed over the entire circumference in the circumferential direction. In the recess ula, the first planar heat generating body and the second planar heat generating body 132 are housed. The outer casing 121 is a cylindrical member made of metal similarly to the inner casing ill. The outer casing 121 is disposed so as to close the concave portion 111a of the inner casing 111 in terms of the outer peripheral side of the inner casing 111. Thereby, the first planar heat generating body 131 and the second planar heat generating body 132 are housed in the concave portion in a of the inner casing hi. The first planar heating element 131 and the second planar heating element 132 are electrically insulated heating resistors. The first planar heat generating body 1 31 and the second planar heat generating body 132 are superposed (stacked on the side surface) as shown in the drawing, and are accommodated in the concave portion 111a of the inner casing 111. The first planar heating element 131 2030-10032-PF; Tungming 13 200934280 and the second planar heating element 132 are, for example, a thin plate-shaped planar heating element formed of a soft material, by which The outer peripheral surface of the inner casing U1 is disposed substantially in the entire circumference of the inner casing 111, and as a result, it may be configured to be housed in the concave portion U1a of the inner casing 111 in a cylindrical shape. Further, it is formed of a cylindrical or cross-sectional arc-shaped member which is initially used as a curved surface that fits the outer peripheral surface of the inner casing 111 (the bottom surface of the concave surface 111a), and is disposed in the concave portion 11 la of the inner casing m. also may. In any case, the first planar heat generating body 131 and the second planar heat generating body 133 of each cylindrical shape which are concentrically overlapped, the surface (bottom surface) of the concave portion 111a of the inner casing 111 and the inner circumferential surface of the outer casing 121 The inner casing 111 and the outer casing 121 are joined together in a contact surface corresponding to the edge of the concave portion 1Ua of the inner casing U1, and are joined as described above to form a concave portion 111a according to the inner casing. The internal space 112. As a result, the first planar heating element 131 and the second planar heating element 132 are covered by the inner casing 111 and the outer casing 121, and are buried in the crucible wall surface of the heating unit ι1, and are heated in the heating unit 101. When it is installed in the chamber interior space 13, the processing gas or the like exposed to the space 13 inside the chamber is also prevented. Further, the joining of the inner casing 111 and the outer casing 121 may be performed by welding, raw material joining, or the like, and may be joined by a screw, a bolt, a splint or the like via a ring-shaped ring or the like. In the first planar heating element 131 and the second planar heating element 132, the first planar heating element wire 141 and the second planar heating element wire 42 are connected as a pair of wires for supplying electric power. . First planar heat 2030-10032-PF; Tungming 14 200934280 The body wire 141 and the second planar heat generating body wire 142 are disposed together at a predetermined position of the upper edge of the heating unit ιοί via the 〇 ring 151, The tube 15Q is led out to the outside of the heating unit m via the connected wire. The first planar heating element wire 141 and the second planar heating element wire 142 are connected to a power supply circuit (energizing device) of a completely separate system that is independently controlled. Therefore, the first planar heat generating element 13 that is supplied with electric power via the first planar heating element wire 14 and the second planar heat generating body 132 that is supplied with electric power via the surface-shaped heating element wire 142, The amount of heat generated is independently controlled. In the substrate processing apparatus 1, the heating unit 101 of such a configuration is disposed in the chamber interior space 13 of the processing chamber 1A as shown in Fig. 1. The wire lead-out tube 15 of the heating unit 101 is further drawn to the outside of the processing chamber 1 through the wire lead-out passage 19a provided in the cover portion 12. In addition, in the processing chamber 10, the wafer transfer opening 15 for wafer entry and exit and the wafer transfer tube 3 are provided. The opening portion 115 is also provided in the heating unit 1〇1 by the wafer transfer tube 3, the support table 20 inside the heating unit 70 1〇1, and the wafer being appropriately carried in and out. The opening portion 115 is provided at a position corresponding to the wafer transfer opening 15 of the processing chamber 1A. Similarly, in the processing chamber 10, the exhaust port 7 for exhausting the body inside the chamber space 13 and the exhaust pipe 5 are provided, whereby the gas in the chamber interior space 13 is appropriately As in the exhaust, the heating unit 2030-10032-PF; Tungming 15 200934280 101' opening 116 is also disposed at a position corresponding to the exhaust port 17 of the processing chamber 10. Further, the inner casing 111 and the outer casing 121 have high heat transfer efficiency and are formed of a material having corrosion resistance to a processing gas. Specifically, for example, a stainless steel material ('for example, SUS316) or an aluminum plate (for example, A5052) is preferably 'but Qin, Ming alloy, Zhugu alloy, or by oxidation, carbonization, nitriding, A ceramic such as tantalum nitride or cerium oxide may be used. Further, φ can be ensured to have corrosion resistance by coating, and it is preferable to use the material (Al2〇3), Sic, A1N, Si3N4, or Υ2〇3 as the covering material in this case. Further, the first planar heating element 131 and the second planar heating element 132 are made of a silicone heater, a mica heater, a ceramic heater, or a P〇ly imide heater. The resistor is composed of a heating element. The heating unit 201 is disposed inside the lid portion 12 of the processing chamber 1A together with the heating unit 101 and a heating unit 2〇2 to be described later, and heats the chamber interior space 13 of the processing chamber 10 to a desired position. temperature. The heating unit 201 is a disk-shaped heating device that is disposed to close the upper opening of the heating unit 101 described above. Fig. 3 is a cross-sectional view showing the configuration of the heating unit 2〇1 of the disk shape. The heating unit 201 is a heating device whose overall shape is a disk shape, and its basic configuration is the same as that of the above-described heating unit 1〇1. Further, in the heating unit 201, since the member disposed along the inner surface of the lid portion 12 inside the lid portion 12 on the upper portion of the chamber interior space 13 is in the center thereof, the gas discharged from the jet head 42 is released. The flow is to be placed 2030-10032-PF; Tungming 16 200934280 is formed in the wafer W direction opening 261 of the support table 20. Therefore, the heating unit 201 is strictly a heating device having a ring shape. The heating unit 201 includes an inner casing 211, a casing 221, a first planar heating element 231, a second planar heating element 232, a first planar heating element wire 241, a second planar heating element wire 242, and a wire. The lead-out tube 250 and the O-ring 25 are formed of a metal, and the openings 212 and 222 are formed in a ring-shaped member at the center. The material and the like are the same as those of the inner casing 111 and the outer casing 121 of the heating unit 101 described above. An annular recessed portion 213 is formed on the outer surface (upper surface) of the inner casing 211. In this concave portion 213', the first planar heat generating body 231 and the second planar heat generating body 232 are housed. The first planar heating element 231 and the second planar heating element 232 are electrically insulated and electrically insulated, and the annular heating element is superposed (stacked) as shown in the figure, and is housed in the inner casing. The recess 213 of the 211. The inner casing 211 and the outer casing 221 are joined together, and the upper end surface of the edge of the concave portion 213 of the inner casing 211 is joined as a joint surface to form an inner space 214 according to the concave portion 213 of the inner casing 211. As a result, the first planar heating element 231 and the second planar heating element 232 are in a state of being embedded in the inside of the heating unit 201 by the inner casing 211 and the outer casing 221, and are provided in the heating unit 2〇1. When the inside of the chamber space 13 is exposed, the processing gas or the like exposed to the space 13 inside the chamber is also prevented. Further, the material of the first planar heating element 231 and the second planar heating element 232, the bonding method of the inner casing 211 and the outer casing 221, and the like, and the above-mentioned addition 2030-10032-PF; Tungming 17 200934280 thermal unit 101 the same. In the first planar heating element 231 and the second planar heating element 232, the first planar heating element wire 241 and the second planar heating element wire 242 are connected as a pair of wires for supplying electric power. The first planar heating element wire 241 and the second planar heat generating element wire 242 are provided together on the upper surface of the heating unit 201 via the ring-shaped ring 251, and are led to the heating via the connected wire lead-out tube 250. The outside of unit 2〇1. The first planar heating element wire 241 and the second planar heat generating wire 242 are connected to a power supply circuit (energizing device) of a completely separate system that is independently controlled. Therefore, the first planar heating element 231 through which the first planar heating element is supplied, the first planar heating element 231 supplied with electric power, and the second planar heating element 232 that is supplied with electric power via the first planar heating element wire 242, The amount of heat generated is independently controlled. In the substrate processing apparatus 1, the heating unit 2〇1 of such a configuration is disposed inside the lid portion 12 of the processing chamber 1〇. The 导线 wire lead-out tube 250 of the heating unit 2 is led out to the outside of the processing chamber via the lead-out tube through-port 19b provided in the lid portion 12. In the lower portion of the heating unit 1〇1 inside the processing chamber 10, a circular-shaped heating unit 2〇2 is disposed. The heating unit 202 is a circular plate-shaped heating device disposed along the bottom surface of the chamber body 11 in the closed state of the heating unit 1 , and is heated together with the heating unit 101 and the heating unit 2〇丨. The chamber interior 13 of the chamber 〇 is heated to a desired temperature. The configuration of the heating unit 202 is the same as that of the above-described heating unit 2〇1020-10032-PF; Tungming 18 200934280, so detailed description thereof will be omitted. The heating unit 202 has a size of an opening 262 (refer to Fig. 1) formed at the center portion, which is different from an opening 261 formed in the central portion of the heating unit 2''1'.
加熱單元201係，被配設於加熱單元1〇1的上部，1 中央部的開口 261係，用以使從噴氣頭42放出的氣體流動 至被載置於支持台20的晶® W方向。相對地，加熱單元 2〇2係，被配設於加熱單元m的下部，其中央部的開口 262係:，用㈣過支持自20的支縣21而被形成。因此， 加熱單元202的中央部的開σ 262係，和加熱單元2〇1的 中央部的開口 261比較非常小，儘可能使支持軸21通過的 充分的直徑被形成。 在晶圓搬送管30、給氣管40及排氣管5〇的内部方面， 分別沿著其内周面，將各管的内部維持在所希望的溫度用 的加熱單元301、401及501被配設。 這些加熱單元30卜401及501係’參考第2圖、可利 用和上述腔室用的圓筒形狀的加熱單元1〇1大致相同構成 的加熱單元。亦即，參考第2圖、有關上述筒狀（在上述的 例子為圓筒狀）的加熱單元101 ’配合設置此刮面形狀的管 的剖面形狀’將此剖面方向的尺寸作為可設置於管的内側 的尺寸’冑筒的延伸方向的長度作為管的加熱對象區域的 長度，藉由作為適應於設置導線的導出形態的管的形態， 將晶圓搬送管30、給氣管40及排氣管5〇分別加熱的加熱 單元301、401及501被構成。 2〇30-i〇〇32-PF;Tungming 19 200934280 又，被設置於晶圓搬送管30、給氣 ^乳管40及排翕答 的内部的加熱單元301、401及501係，★疋雜丄' 藉由和第 所示的加熱單元1〇1不同的構成實現。 圖 例如，將内殼及外殼分別藉由接合 具有半圓形狀的卹 面的兩個構件而構成也可。在此情形方面，設置在成σ 個構件的接合部的場所的外周側突出 、為兩 A 徑方向、延伸於 筒的高度方向的凸緣，#由將各構件的此凸緣由螺絲等接 合，將内殼及外殼的各構件、以及内殼和外殼接合係較佳 地0 由加熱單元3G卜4G1、及训係，分別供給電力至其 内部的兩個面狀發熱體用的兩組導線經由導線導出管而被 導出，這些導線係，更經由各管的導線導出管通出口而被 引出至各管的外部。 加熱單A 3〇1、4〇1&501的各別兩組面狀發熱體用導 線係，分別被獨立地控制的完全分別系統的電力供給電路 ❹（通電裝置）。因此’加熱單元3〇卜4〇1及5〇1的各別兩個 面狀發熱體係，其發熱量各別獨立地被控制。 在此類構成的基板處理裝置i中，例如，在經由排氣 管50、腔室内部空間13被抽真空後，在加熱單元ι〇ΐ2〇卜 202、301、401及501的各面狀發熱體選擇地通電被進行。 腔室内部空間13、晶圓搬送管3〇、給氣管4〇及排氣管5〇 的内部被加熱。如上述，藉由以加熱單元1〇1、2〇1、2〇2、 301、401及501將腔室内部空間13、晶圓搬送管3〇、給 氣管40及排氣管50直接地加熱，可將這些空間急速地加 2030-10032-PF;Tungming .20 200934280 ’*、可將腔至内部空間13迅速地作為目的的溫度。又，可 將腔室内 二間13均一地加熱，可適當地進行溫度管理。 至内間13、晶圓搬送管30、給氣管40及排氣 的内°卩成為所希望的高溫狀態之後，經由晶圓搬送管 將處理對象的晶圓投入至腔室内部空間13 ,經由給氣 管4〇、將所希望的反應氣體導入至腔室内部空間13,又， 對應於必要，進行從排氣管50的氣體排出，進行根據CVD 的成膜等的處理。 此時，在本實施例的基板處理裝置1中，由於藉由加 熱單几、2G1、202、腔室内部空間13的内表面溫度被 均一且高溫地保持，可防止副生成物堆積，又，可防止根 據副生成物堆積的顆粒的發生，可期待處理的良率上升。 又，可達到成膜速度的上升/反應速度的上升、成膜的均一 性等。The heating unit 201 is disposed at an upper portion of the heating unit 1A1, and has a central opening 261 for flowing the gas discharged from the air jet head 42 to the direction of the wafer W placed on the support table 20. On the other hand, the heating unit 2〇2 is disposed in the lower portion of the heating unit m, and the opening 262 in the central portion thereof is formed by (4) supporting the branch 21 supported by 20. Therefore, the opening σ 262 of the central portion of the heating unit 202 is extremely small compared with the opening 261 of the central portion of the heating unit 2〇1, and a sufficient diameter through which the support shaft 21 passes is formed as much as possible. In the inside of the wafer transfer pipe 30, the air supply pipe 40, and the exhaust pipe 5, the heating units 301, 401, and 501 for maintaining the inside of each pipe at a desired temperature along the inner peripheral surface thereof are respectively provided. Assume. These heating units 30, 401 and 501 are referred to Fig. 2, and a heating unit having substantially the same configuration as the cylindrical heating unit 1〇1 for the above-described chamber can be used. That is, referring to Fig. 2, the cross-sectional shape of the tube in which the above-described cylindrical shape (in the above-described example is cylindrical) is provided with the shape of the scraped surface is set as the tube can be set in the tube. The inner dimension "the length of the cylinder in the extending direction is the length of the heating target region of the tube, and the wafer transfer tube 30, the air supply tube 40, and the exhaust pipe are configured as a tube adapted to the lead-out form of the lead wire. The heating units 301, 401, and 501 that are separately heated are configured. 2〇30-i〇〇32-PF; Tungming 19 200934280 In addition, the heating units 301, 401, and 501 are installed in the wafer transfer tube 30, the air supply tube 40, and the inside of the battery.丄' is realized by a different configuration from the heating unit 1〇1 shown in the drawing. For example, the inner casing and the outer casing may be formed by joining two members having a semicircular shirt surface. In this case, the flange is formed on the outer peripheral side of the joint of the σ-members, and is a flange extending in the height direction of the cylinder in the two A-diameter directions. #The flange of each member is joined by a screw or the like. The two members of the inner casing and the outer casing, and the inner casing and the outer casing are preferably 0. The two sets of wires for the two planar heating elements respectively supplied with electric power to the inside by the heating unit 3G, 4G1, and the training system are via The lead wires are led out, and these lead wires are led out to the outside of the respective tubes through the wire outlet pipes of the respective tubes. Each of the two sets of planar heat generating body wires for the single A 3 〇 1, 4 〇 1 & 501 is independently controlled by a completely separate system power supply circuit ❹ (energizing device). Therefore, the heating units 3 are in the form of two planar heat generating systems of the respective two planar heat generating systems, and the heat generation amounts thereof are independently controlled. In the substrate processing apparatus i of such a configuration, for example, after the vacuum is evacuated through the exhaust pipe 50 or the chamber interior space 13, the surface heating of the heating units ι 2, 202, 301, 401, and 501 is performed. The body is selectively energized to be performed. The inside of the chamber interior space 13, the wafer transfer tube 3, the air supply tube 4, and the exhaust tube 5A are heated. As described above, the chamber interior space 13, the wafer transfer tube 3, the air supply tube 40, and the exhaust tube 50 are directly heated by the heating units 1〇1, 2〇1, 2〇2, 301, 401, and 501. These spaces can be quickly added to 2030-10032-PF; Tungming .20 200934280 '*, the cavity to the internal space 13 can be quickly used as the target temperature. Further, the two chambers 13 can be uniformly heated in the chamber, and temperature management can be appropriately performed. After the inner chamber 13 and the wafer transfer tube 30, the air supply tube 40, and the exhaust gas are in a desired high temperature state, the wafer to be processed is introduced into the chamber interior space 13 via the wafer transfer tube, and The gas pipe 4 is introduced into the chamber space 13 in a desired manner, and the gas is discharged from the exhaust pipe 50 as necessary, and processing such as film formation by CVD is performed. In this case, in the substrate processing apparatus 1 of the present embodiment, since the temperature of the inner surface of the chambers 13 and 2G1 and 202 is uniformly and high-temperature, the accumulation of by-products can be prevented. It is possible to prevent the occurrence of particles deposited by the by-products, and it is expected that the yield of the treatment increases. Further, it is possible to increase the film formation rate, increase the reaction rate, and uniformity of film formation.
又，在基板處理裝置！令’由於藉由加熱單元3〇卜 4〇1及50卜晶圓搬送管3〇、給氣管4〇及排氣管5〇的内 部也適當地作為高溫狀態，在這些配管部分中，可防止藉 由溫度的降低、反應氣體的成分昇華析出。亦_，可防止 或抑制副生成物發生於這些配管部分而附著、堆積。 結果’例如，可防止排氣管50由副生成物被封閉或 可使到封閉為止的時間非常長，將裝置的咖（μ_ Between Fai lure，平均無故障時間）延長，將Mm(M⑽Also, in the substrate processing device! In the piping portion, it is possible to prevent the inside of the air supply pipe 3〇 and the exhaust pipe 5〇 from being heated as a high temperature state by the heating unit 3, 4, 1 and 50. The temperature is lowered and the components of the reaction gas are sublimated. Also, it is possible to prevent or suppress the occurrence of by-products from adhering to and accumulating in the piping portions. As a result, for example, it is possible to prevent the exhaust pipe 50 from being closed by the by-product or to make it to be closed for a very long time, and to extend the device (μ_ Between Fai lure, mean time between failures), Mm (M (10)
Time to Repair，平均修復時間）縮短 率。 可提高裝置的運轉 2030-10032-PF;Tungming 21 200934280 又，在本實施例的基板處理裝置1中，特別是加熱單 元101、201、202、301、401及501係，分別具備兩個獨 立的發熱體。又，對於這兩個發熱體、經由各別獨立的導 線（通電裝置）、供給電力，成為在各加熱單元中、可將兩 個發熱體獨立地控制的構成。 藉由此構成’本實施例的基板處理裝置1係，具有以 下所述的各種特徵。Time to Repair, average repair time) shortened rate. The operation of the apparatus can be improved 2030-10032-PF; Tungming 21 200934280 Further, in the substrate processing apparatus 1 of the present embodiment, in particular, the heating units 101, 201, 202, 301, 401, and 501 are respectively provided with two independent heating stuff. Further, the two heat generating elements are supplied with electric power via respective independent wires (energizing means), and the heating elements can be independently controlled in each heating means. The substrate processing apparatus 1 of the present embodiment is configured to have various features as described below.
首先，由於具備各加熱單元可各別控制的複數個發熱 體，在各加熱單元中，亦即，對於處理腔室1〇或各管、可 更進一步地設定精密的溫度環境，可進一步適當地進行對 於晶圓的處理。 又，具有此類構成的話，即使在各加熱單元中一方 的發熱體藉由切斷等故障的情形，若利用另一方的發熱體 來維持發熱量的話，可轉處理腔室及各管的溫度環境。 因此，即使-方的發熱體故障、檢測此故障、馬上切換至 朝另-發熱體的通電發熱’可繼續基板處理 '结果，可提 高基板處理裝置的運轉率、且同時不產生處理缺陷，可有 效率地進行晶圓處理。 又’因為可藉由此類沾士 的方法、維持基板處理裝置的運 轉，所以有關切斷等的 t # .障發生的發熱體係，可基於晶圓 的题理6十畫等、計畫地 故障，藉由溫度降低等：換。因此，兩個發熱體-起 生的可能性極低。亦即：：處理成為不適當等的事態發 等的不合適係，可大略確眘：加熱單元的故障的溫度降低 啼T地防止。 2030-10Q32-PF;Tungming 22 200934280 又，各加熱單元的兩個發熱體的使用形態係，各種形 態被考慮。 例如，通常係僅使用一方的發熱體、使加熱單元被動 作在其方的發熱體藉由切斷等故障的情形、供給電力 至另一方的發熱體而被作動，維持處理腔室1〇的溫度環境 般的形態也可。 此時，置檢測出最初的發熱體的切斷等的故障的裝 e 置，在最初的發熱體故障的情形、電力自動地被供給至另 一方的發熱體般是較佳地。 又將兩個發熱體從通常時同時並聯地被作動般的形 態也可。這樣做的話，可有效地抑制一方的發熱體故障時 的溫度降低。又，因為在通常時、供給至各發熱體的電力 可減少，也可抑制發熱量，所以可有效地減低切斷等的故 障發生的可能性。 又，在本實施例的基板處理裝置中，在各加熱單元中、 碜 將薄板狀的兩個發熱體重合（層積）配設。 因此，在圓筒形狀的加熱單元（加熱單元1〇1等）中， 對於腔室内部空間13、在其側周面的内外、兩個發熱體被 配設，即使在作動任一發熱體的情形、或作動此兩方的的 情形中，對於腔室内部空間13的發熱區域完全相同，可形 成完全相同的溫度分佈。因此’即使在由於如上述般的故 障等、有效的發熱體的切換產生的情形中，可有效地將所 希望的適當的溫度環境安定且維持。 又，在圓板形狀的加熱單元（加熱單元2〇1等）中，成 2030-10032-PF;Tungming 23 200934280 為在上下層積、兩個發熱體被配設，對於外部的發熱區域、 發熱面積係相同。因此，即使在作動任一發熱體的情形、 或作動此兩方的的情形中，在發熱體的切換的前後中、可 形成完全相同的溫度分佈，可有效地將相同地所希望的適 當溫度環境安定且維持。 又’兩個發熱體的發熱量相同或不同也可。加熱器係， 在升溫時、必要的發熱量大，在溫度的維持、必要的發熱 ❹ 量係與此相比小。因此，在一方的發熱鱧故障之際、必要 的發熱量係維持溫度用的發熱量即可，兩個發熱體的發熱 量不必相同也可。 又’上述的實施例係，用以容易理解本發明而被記載， 但不用以限定本發明。在本實施例中被揭露的各要素係， 也包含屬於本發明的技術範圍的全部的設計變更或均等 物’又，可有任何適當的各種改變。 例如’在上述的實施例中’雖然以在加熱單元、兩個 © 發熱體被具備的情形作為例子表示，但發熱體係不限定於 兩個，三個以上也可。 又，配設於加熱單的複數系統的發熱體的發熱容 量、作用（發熱）面積等係，相同也可、不同也可。 在相同的情形方面，在故障前後中、可以全部相同條 件使用的兩系統的發熱體被具備，在故障時為有效。 又，在不同的情況下，例如，將一方限定於故障時的 溫度降低防止用的緊急時使用目的等、對應於使用形態或 推定的故障的形態，可有效率地安裝、配設。 2030-10032-PF;Tungming 24 200934280 又’在本實施例中所稱的面狀發熱體係，作為使用狀 態、將以板狀、或扁平的狀態被構成的發熱體總稱的物件。 因此，例如，藉由將線狀的電阻發熱體在一定範圍内配線、 也包含全體實質上以面狀發熱般的構件/裝置的概念。又， 有關此類面狀發熱體的詳細構造、發熱方式等，並不限定。 又’在上述的實施例中，在各加熱單元中，將板狀的 兩個發熱體重合（層積）而在外壁（殼）中配設。然而，將兩 個、或三個以上發熱體在同一面内（同一平面内、同一 内等）將設置區域分別設置也可。 有關此類形態的加熱単元的例子，參考第4圖〜第g圖 說明。 在第4圖所示的加熱單元302係，參考第1圖及第3 圖說明般的圓板形狀的加熱單元。 加熱單元302係’和在第3圖所示的加熱單元2〇1相 同，第一面狀發熱體331及第二面狀發熱體332構成的兩 φ 個面狀發熱體為在内毅311和外殼321之間被夹持的構 成’第一面狀發熱體331及第二面狀發熱體332係，成為 分別經由第一面狀發熱體用導線341及第二面狀發熱體用 導線342、電力各別地被供給而被控制的構成。然而，在 加熱單元302中，第一面狀發熱體331和第二面狀發熱體 332係，在同一面内將設置區域分別的形態下被配設。 作為配設複數個發熱體於同一面内的形態，各種方 法、形態被考慮。 例如，如第5圖所示般，將兩系統的電阻發熱體4 31、 2030-10032-PF;Tungming 25 200934280 4 3 2 ’以渦捲狀被配設般的構成也可。 又，如第6圖所示般’將兩系統的電阻發熱體433、 434，例如，以在加熱單元的周邊或中央部成為高密度般的 圖示的樣式配設般也可。各發熱體的配設形態係，例如， 對應於要求溫度分佈等、作為任意的形態也可。 又’在第7圖所示的加熱單元502係，參考第1圖及 第2圖說明般的圓筒形狀的加熱單元。 加熱單元502係’和在第2圖所示的加熱單元1〇1相 同，第一面狀發熱體531及第二面狀發熱體532構成的兩 個面狀發熱體為在内殼511和外殼521之間被夾持的構 成，第一面狀發熱體531及第二面狀發熱體532係，成為 分別經由第一面狀發熱體用導線541及第二面狀發熱體用 導線542、電力各別地被供給而被控制的構成。然而，在 加熱單元502中，第一面狀發熱體531和第二面狀發熱體 532係，在同一面内將設置區域分別的形態下亦即在 同一面内被配設。 在圓筒形狀的加熱單元中，作為配設複數個發熱體於 同一面内的形態，各種方法、形態被考慮。 例如，如第8圖所示般，兩系統的線狀電阻發熱體 631、632係，沿著加熱單元的圓筒形狀的周方向、以梳狀 被交互地配設般的構成也可。 又’如第9圖所示般，兩系統的線狀電阻發熱體633、 634係在加熱單元的圓筒形態的軸心方向被交互地配設 般的構成也可。 2030-10032-PF;Tungming 26 200934280 在第4®〜第9圖所示的各加熱單元中，和將複數個發 熱體層積的構成的加熱單元同樣，對於處理腔室等、可進 -步設定精密的溫度環境，在-方的發熱體故障的情形、 也可利用另丨的發熱體、維持發熱量、維持處理腔室等 的溫度環境。 。—又，特別是配設複數個發熱體在同一面内的各種加熱 單兀中，可在將發熱體僅有—系、统時相同的容積下、將複 數個發熱體配置在内殼和外殼之間，可有效地將加熱單元 小型化。 又，更參考第1圓、在上述的基板處理裝置i中加 熱晶圓搬送管30的加熱單元謝 '及加熱排氣管5〇的加 熱單元501係，分別比晶圓搬送管3〇及排氣管5〇的腔室 本體11的連接部更延伸至腔室的内部方向，通過被形成於 腔室本體11的晶圓搬送用開口 15及排氣口 17，其前端部 係達到被形成於加熱單元1〇1的開口部115及開口部ιΐ6 的快到外周側的位置》 然而，將此加熱單元301及5〇1更在腔室内部空間Μ 方向被延伸，也通過被形成於加熱單元1〇1的開口部ιΐ5 及開口部116，其前端部達到加熱單元1〇1的内部為止般 的構成也可。在此場合方面，必須將被形成於加熱單元ι〇ι 的開口部115及開口部116、加熱單元3〇1及加熱單元 可分別通過般被擴大直徑^ 又，根據此類構成的話，可將晶圓的搬送路或氣體的 流路沒有間隙地加熱，較均一的溫度管理成為可能為較佳 2030-l〇〇32-PF;Tungming 27 200934280 地。本發明係，藉由此類構成實現也可。 [產業上的利用領域] 本發明的加熱裝置係，可適用於基板處理裝置、蝕刻 裝置、CVD裝置等的半導體製造裝置。又，有在將流路或 空間確定的内壁面從内側直接加熱的必要的話，其他裝置 等中也可使用。 【圖式簡單說明】 第1圖係為表示本發明的一實施例的基板處理裝置的 構成的圖示； 第2圖係為表示在第i圏所示的基板處理裝置的圓筒 狀加熱單元的構成的圖示； 第3圖係為表不在第j圓所示的基板處理裝置的圓板 狀加熱單元的構成的圖示； 第4圖係為表示有關本發明的圓板狀加熱單元的其他 例子的圖示； ' 第5圖係為表示在第4圖表示的圓板狀加熱單元中的 發熱體的配設例的圖示； 第6圖係為表示在第4圖表示的圓板狀加熱單元中的 發熱體的其他配設例的圖示； 第7圖係為表示有關本發明的圓筒狀加熱單元的其 例子的圖示； 、 第8圖係為表示在第7圖表示的圓筒狀加熱單元中的 2〇30-l〇〇32-pF;Tungming 28 200934280 發熱體的配設例的圖示； 第9圖係為表示在第7圖表示的圓筒狀加熱單元中的 發熱體的其他配設例的圖示。 【主要元件符號說明】 1〜基板處理裝置； 10〜處理腔室； 11〜腔室本體； 12〜蓋部； 13〜腔室内部空間； 14〜支持台（susceptor)用底部開口； 15〜晶圓搬送用開口； 1 6〜給氣口； 17〜排氣口； 18〜0形環； g 19a、19b〜導線導出管通過口； 20〜支持台； 21〜支持軸； 30〜晶圓搬送管； 31〜0形環； 40~給氣管； 41 ~ 0形環； 42~喷氣頭（showerhead); 43〜氣體流出用開口； 2030-10032-PF;Tungming .29 200934280 50〜排氣管； 51-0形環； 101、2(Π、202、301、302、401、501、502〜加熱單元； 111、211、311、511 〜内殼； 11 la〜凹部； 112〜内部空間； 115、116、261、262〜開 口部； 121、221、321、521 〜外殼； 131、 231、331、431、433、531、631、633〜第一面狀 發熱體； 132、 232、332、432、434、532、632、634〜第二面狀 發熱艎； 141、 241、341、54卜第一面狀發熱體用導線； 142、 242、342、542〜第二面狀發熱體用導線； 150〜導線導出管； 151〜0形環。 2030-10032-PF;Tungming 30First, since a plurality of heating elements that can be individually controlled by the respective heating units are provided, it is possible to further appropriately set a precise temperature environment in each of the heating units, that is, in the processing chamber 1 or each tube. Perform processing on the wafer. In addition, when such a configuration is employed, even if one of the heating elements in each heating unit is broken by a failure or the like, if the other heating element is used to maintain the amount of heat generation, the temperature of the processing chamber and each tube can be changed. surroundings. Therefore, even if the heating element of the square is faulty, detecting the failure, and immediately switching to the energization heating to the other heating element, the substrate processing can be continued, and the operation rate of the substrate processing apparatus can be improved without causing processing defects. Wafer processing is efficient. In addition, since the operation of the substrate processing apparatus can be maintained by such a method of the smear, the heat generation system of the occurrence of the scission, such as cutting, can be calculated based on the symmetry of the wafer, etc. Fault, by temperature reduction, etc.: change. Therefore, the two heating elements - the possibility of occurrence is extremely low. In other words, it is possible to prevent the temperature of the failure of the heating unit from being lowered. 2030-10Q32-PF; Tungming 22 200934280 In addition, the form of use of the two heating elements of each heating unit is considered, and various forms are considered. For example, in the case where only one of the heat generating elements is used, the heating element that is operated by the heating unit is broken by a failure such as cutting, or the electric power is supplied to the other heating element, and the processing chamber is maintained. The temperature-like form is also acceptable. In this case, it is preferable to detect the failure of the first heating element or the like, and to automatically supply the electric power to the other heating element in the case where the first heating element fails. Further, it is also possible to move the two heat generating bodies in a state in which they are normally operated in parallel at the same time. By doing so, it is possible to effectively suppress the temperature drop at the time of failure of one of the heating elements. Further, since the amount of electric power supplied to each of the heat generating elements can be reduced at the normal time, the amount of heat generation can be suppressed, so that the possibility of occurrence of a failure such as cutting can be effectively reduced. Further, in the substrate processing apparatus of the present embodiment, in each of the heating units, the two heats in the form of thin plates are laminated (layered). Therefore, in the cylindrical heating unit (heating unit 1〇1, etc.), the inside of the chamber interior 13 and the inside and outside of the side peripheral surface, the two heat generating bodies are disposed, even if any of the heating elements is actuated In the case of the case or the operation of the two sides, the heat generation area of the space 13 inside the chamber is completely the same, and the same temperature distribution can be formed. Therefore, even in the case where switching of an effective heat generating body due to a failure such as the above occurs, the desired appropriate temperature environment can be effectively stabilized and maintained. In addition, in the heating unit (heating unit 2〇1, etc.) in the shape of a disk, it is 2030-10032-PF; Tungming 23 200934280 is placed on the upper and lower layers, and two heat generating elements are arranged, and the external heat generating area and heat are generated. The area is the same. Therefore, even in the case of operating any of the heat generating bodies or in the case of operating both of them, the same temperature distribution can be formed before and after the switching of the heat generating body, and the same desired temperature can be effectively obtained. The environment is stable and maintained. Further, the calorific values of the two heating elements may be the same or different. In the heater system, the amount of heat required is large at the time of temperature rise, and the temperature is maintained and the amount of heat generation required is small. Therefore, in the case of one of the heat generation failures, the necessary heat generation amount is required to maintain the heat amount for the temperature, and the amount of heat generated by the two heat generators may not be the same. Further, the above-described embodiments are described for easy understanding of the present invention, but are not intended to limit the present invention. The various elements of the present invention disclosed in the present embodiment are also included in all of the design changes or equivalents of the technical scope of the present invention. For example, in the above-described embodiment, the heating unit and the two heating elements are provided as an example, but the heat generation system is not limited to two, and three or more may be used. Further, the heat generation capacity and the action (heat generation) area of the heating element disposed in the plural system of the heating unit may be the same or different. In the same situation, the two-system heating elements that can be used in the same condition before and after the failure are provided, and are effective in the event of a failure. In addition, in a case where it is different from each other, for example, it is possible to efficiently install and dispose one of them in accordance with the use form or the estimated failure form, which is limited to the purpose of emergency use for temperature reduction prevention at the time of failure. 2030-10032-PF; Tungming 24 200934280 In addition, the planar heat generating system referred to in the present embodiment is generally referred to as a heat generating body which is formed in a plate shape or a flat state as a use state. Therefore, for example, the linear resistance heating element is wired within a certain range, and the concept of a member/device that substantially heats up in a planar shape is also included. Further, the detailed structure and heat generation method of such a planar heating element are not limited. Further, in the above-described embodiment, in the respective heating units, the two heats in the form of a plate are combined (layered) and placed in the outer wall (shell). However, it is also possible to separately set the two or more heat generating bodies in the same plane (in the same plane, in the same plane, etc.). For an example of a heating element of this type, refer to the description of Fig. 4 to Fig. g. The heating unit 302 shown in Fig. 4 is a circular plate-shaped heating unit as described with reference to Figs. 1 and 3 . The heating unit 302 is the same as the heating unit 2〇1 shown in FIG. 3, and the two φ planar heating elements composed of the first planar heating element 331 and the second planar heating element 332 are internally 311 and The first planar heat generating element 331 and the second planar heat generating element 332 are sandwiched between the outer casings 321 and are respectively passed through the first planar heat generating conductor wire 341 and the second planar heat generating conductor wire 342. The power is supplied separately and controlled. However, in the heating unit 302, the first planar heat generating body 331 and the second planar heat generating body 332 are disposed in the same plane in the same plane. Various methods and forms are considered as a form in which a plurality of heating elements are disposed in the same plane. For example, as shown in Fig. 5, the two types of resistance heating elements 4 31, 2030-10032-PF, and Tungming 25 200934280 4 3 2 ' may be arranged in a spiral shape. In addition, as shown in Fig. 6, the resistance heating elements 433 and 434 of the two systems may be arranged in a pattern such as a high density around the heating unit. The arrangement form of each of the heat generating elements may be any form depending on, for example, a required temperature distribution. Further, the heating unit 502 shown in Fig. 7 is a cylindrical heating unit as described with reference to Figs. 1 and 2 . The heating unit 502 is the same as the heating unit 1〇1 shown in FIG. 2, and the two planar heat generating bodies constituting the first planar heating element 531 and the second planar heating element 532 are the inner casing 511 and the outer casing. The first planar heat generating element 531 and the second planar heat generating element 532 are sandwiched between the first and second planar heat generating elements 541 and the second planar heat generating body lead 542 and the electric power. Each is supplied and controlled. However, in the heating unit 502, the first planar heating element 531 and the second planar heating element 532 are disposed in the same plane in the same plane, that is, in the same plane. In the cylindrical heating unit, various methods and forms are considered as a configuration in which a plurality of heating elements are disposed in the same plane. For example, as shown in Fig. 8, the linear resistance heating elements 631 and 632 of the two systems may be alternately arranged in a comb shape along the circumferential direction of the cylindrical shape of the heating unit. Further, as shown in Fig. 9, the linear resistance heating elements 633 and 634 of the two systems may be alternately arranged in the axial direction of the cylindrical form of the heating unit. 2030-10032-PF; Tungming 26 200934280 In each of the heating units shown in the fourth to the ninth, similar to the heating unit in which a plurality of heating elements are stacked, the processing chamber and the like can be further set. In a precise temperature environment, if the heating element fails, the other heating element can be used, the heat generation can be maintained, and the temperature of the processing chamber can be maintained. . - In particular, in a variety of heating units in which a plurality of heating elements are disposed in the same plane, a plurality of heating elements can be disposed in the inner casing and the outer casing under the same volume as the heating element. In between, the heating unit can be effectively miniaturized. Further, referring to the first circle, the heating unit 501 that heats the wafer transfer tube 30 and the heating unit 501 that heats the exhaust pipe 5〇 in the substrate processing apparatus i described above are respectively larger than the wafer transfer tube 3 and the row. The connection portion of the chamber body 11 of the air tube 5 extends further to the inner direction of the chamber, and the front end portion is formed by the wafer transfer opening 15 and the exhaust port 17 formed in the chamber body 11 The opening portion 115 of the heating unit 〇1 and the position of the opening portion ι6 as fast as the outer peripheral side. However, the heating units 301 and 5〇1 are further extended in the space Μ direction of the chamber, and are also formed in the heating unit. The opening portion ι 5 of the 1〇1 and the opening 116 may have a configuration in which the front end portion reaches the inside of the heating unit 1〇1. In this case, the opening portion 115 and the opening portion 116 formed in the heating unit ι〇, the heating unit 3〇1, and the heating unit must be enlarged in diameter as well, and according to such a configuration, The transport path of the wafer or the flow path of the gas is heated without a gap, and a more uniform temperature management may be preferably 2030-l 32-PF; Tungming 27 200934280. The present invention is also achievable by such a configuration. [Industrial Applicability Field] The heating device of the present invention can be applied to a semiconductor manufacturing device such as a substrate processing device, an etching device, or a CVD device. Further, if it is necessary to directly heat the inner wall surface defined by the flow path or the space from the inside, it may be used in other devices or the like. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view showing a configuration of a substrate processing apparatus according to an embodiment of the present invention; and FIG. 2 is a cylindrical heating unit showing a substrate processing apparatus shown in FIG. FIG. 3 is a view showing a configuration of a disk-shaped heating unit of the substrate processing apparatus shown in the j-th circle; FIG. 4 is a view showing a disk-shaped heating unit according to the present invention. FIG. 5 is a view showing an arrangement example of a heat generating body in the disk-shaped heating unit shown in FIG. 4; and FIG. 6 is a disk shape shown in FIG. Illustration of another arrangement example of the heat generating body in the heating unit; Fig. 7 is a view showing an example of the cylindrical heating unit according to the present invention; and Fig. 8 is a view showing the circle shown in Fig. 7. 2〇30-l〇〇32-pF in the tubular heating unit; Tungming 28 200934280; an example of the arrangement of the heating element; and Fig. 9 is a heating element in the cylindrical heating unit shown in Fig. 7. An illustration of other examples of configuration. [Main component symbol description] 1~substrate processing device; 10~processing chamber; 11~chamber body; 12~cover portion; 13~chamber interior space; 14~support desk (susceptor) with bottom opening; 15~crystal Circular transfer opening; 1 6~ air supply port; 17~ exhaust port; 18~0 ring; g 19a, 19b~ wire lead-out tube through port; 20~ support table; 21~ support shaft; 30~ wafer transfer tube 31~0 ring; 40~ air supply pipe; 41~0 ring; 42~showerhead; 43~ gas outflow opening; 2030-10032-PF; Tungming .29 200934280 50~ exhaust pipe; -0-ring; 101, 2 (Π, 202, 301, 302, 401, 501, 502~ heating unit; 111, 211, 311, 511~ inner casing; 11 la~ recess; 112~ internal space; 115, 116 , 261, 262 to the opening portion; 121, 221, 321, 521 to the outer casing; 131, 231, 331, 431, 433, 531, 631, 633 to the first planar heating element; 132, 232, 332, 432, 434 , 532, 632, 634 to the second planar heating enthalpy; 141, 241, 341, 54 the first planar heating element wire; 142, 242, 342, 542 to the second With a wire-like heat generating element; 150~ lead-out pipe; 151~0 ring 2030-10032-PF;. Tungming 30