JP2008031558A - Gas shower head, treatment device, treatment method and maintenance method for treatment device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a shower head composed in such a manner that a plurality of metallic members are superimposed, and capable of feeding, e.g., a film deposition gas to a substrate, in which the cleaning of each gas flow passage can be easily performed, and the generation of reaction products is suppressed. <P>SOLUTION: A shower head composed in such a manner that metallic sheets made of nickel are superimposed in three steps is prepared, and is tacked with bolts, and is installed in a chamber. Next, heating is performed with both heaters provided on a mounting stand and at the upper face of the shower head in the chamber, thus fine ruggedness in the respective contact faces of the metallic sheets each other starts to be melted, and the contact faces start to be metallically diffused and coupled each other from the melted parts. Then, even if the bolts are removed, by continuing the heating to a degree at which the metallic sheets are not separated, the gaps present at the contact faces till then are vanished, and the whole contact face is air-tightly joined. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a gas shower head for supplying a gas to a substrate such as a semiconductor wafer, a processing apparatus and a processing method for processing the surface of the substrate using the gas shower head, and a maintenance method for the processing apparatus.

  One of the semiconductor device manufacturing processes is to form a film on a target object by CVD (Chemical Vapor Deposition), and one of apparatuses for performing this process is a single-wafer type film forming apparatus. For example, this film forming apparatus is provided with a processing container having a mounting table for mounting a semiconductor wafer (hereinafter abbreviated as “wafer”) inside, and facing the mounting table, and supplying a film forming gas toward the wafer surface. A gas shower head. This shower head has a gas flow path formed so that a plurality of types of film forming gases are not mixed with each other and are diffused in the lateral direction and supplied uniformly to the wafer surface. Diffusion plates) are stacked, for example, in three stages. These metal plates are fixed to each other by, for example, bolts and attached to the processing container, and a film forming gas supplied from the upper surface flows downward through a flow path penetrating the inside of the three-stage metal plate, and is formed on the lower end surface. Thus, the wafer is uniformly supplied to the entire surface of the wafer from the many holes. Such a gas shower head can supply a plurality of types of film forming gases simultaneously. For example, in order to form titanium nitride (TiN), TiCl 4 gas and NH 3 gas are not mixed with each other. It passes and is supplied in a processing container.

  FIG. 2 is a longitudinal sectional view showing such a gas shower head capable of separately supplying two kinds of gases, and FIG. 3 is a longitudinal sectional view showing the gas shower head exploded in three stages. As shown in the figure, the TiCl4 gas is transferred from the gas supply pipe 21 to the first hole 33 via the space 31 and the first gas flow path 32 formed between the upper step portion 3a and the middle step portion 3b. Is configured to be directed to the second hole 43 through the second gas flow path 42 and the space 41, respectively. The arrangement of the first hole portion 33 and the second hole portion 43 is staggered so that both deposition gases are spread evenly over the entire surface of the wafer.

  However, the gas shower head for supplying a plurality of types of film forming gases as described above has the following problems. That is, the contact surface (joint surface) P2 between the metal plates at each stage fixed by screwing has minute irregularities that cannot be eliminated by mechanical polishing as shown in FIG. However, it does not adhere completely, and a very small gap of several μm as shown in FIG. 8 is generated. Therefore, TiCl4 gas and NH3 gas may be mixed through this gap, and in this case, a product may be generated in the gas shower head.

  That is, since both film forming gases react with each other by heat energy, the reaction usually takes place near the surface of the wafer heated on the back side, but the gas shower head and the wafer are close to each other. The gas shower head is also heated by the heat radiated from the gas, and a part thereof reacts in the gas shower head. The reaction product generated in this way may cause particles.

  On the other hand, as a countermeasure against the gap, there is a method of closing the gap by applying a brazing material to the joining surface of the diffusion plate when the diffusion plate is joined. However, when this method is adopted, the brazing material and the film forming gas react at a site near the flow path in the diffusion plate, and the reaction product may become particles. Specifically, in the apparatus having the above-described configuration, for example, when a brazing material other than the constituent base material of the gas shower head such as Ag, Cu, Zn or the like is used, Cl or F in the film forming gas reacts with the brazing material. Then, a reaction product is generated. In addition, when brazing material is used, it is difficult to disassemble each diffusion plate, and there is a problem that it is inconvenient when performing a cleaning operation.

  The present invention has been made based on such circumstances, and the object thereof is a gas shower head configured by stacking a plurality of metal members and capable of supplying a plurality of types of film forming gases to a substrate. An object of the present invention is to provide a technique for preventing different kinds of film forming gases from being mixed from a gap generated between contact surfaces of metal members. Another object of the present invention is to apply the gas shower head to a processing apparatus to suppress the generation of particles.

The gas shower head according to the present invention is provided so as to face the surface of the substrate and includes a large number of holes in the surface facing the substrate, and gas sent from a gas supply path is passed through the holes to the substrate In the gas shower head that supplies to the
By heating in a state where a plurality of metal members are stacked one above the other, a shower head body in which the contact surfaces of each metal member are metal diffusion bonded,
And a plurality of gas flow paths that are formed so as to cross the contact surface in the shower head body and are formed independently.

  According to such a configuration, the contact surfaces of the metal members forming the gas shower head are chemically bonded to each other by heating, and therefore, due to minute unevenness that could not be eliminated by mechanical bonding on the bonding surface. The minute gaps that are formed can be eliminated. Accordingly, it is possible to prevent gas leakage in each gas flow path and prevent the formation of reaction products by mixing different film forming gases in the gas shower head.

  Further, since the gas shower head according to the present invention has the above effects, it is preferably applied to, for example, a processing apparatus. The processing apparatus includes, for example, a processing container provided with a mounting table for mounting a substrate. And a vacuum pump for exhausting the inside of the processing container. For example, nickel or a nickel alloy is preferably used as the metal member.

Further, the processing method according to the present invention is a processing method in which a gas is supplied from a gas shower head facing the substrate to the substrate placed on the mounting table in the processing container, and the processing is performed.
The gas shower head is configured by metal diffusion bonding between the contact surfaces of each metal member by heating the metal member in a state where a plurality of metal members are overlapped,
A gas is supplied from the gas shower head to the substrate, and the surface of the substrate is processed.
In addition, the present invention maintains a processing apparatus that supplies a gas to a substrate from a gas shower head facing the substrate and processes the surface of the substrate placed on a mounting table in a processing container. In the method
In a state in which a plurality of metal members constituting the gas shower head are overlapped, the process includes heating the metal members and bonding the contact surfaces of the metal members to each other by metal diffusion bonding to assemble the gas shower head.
Moreover, in the maintenance method of the processing apparatus described above, the step of assembling the gas shower head includes a step of screwing by overlapping a plurality of metal members in addition to the step of metal diffusion bonding of the contact surfaces of the metal members. You may make it provide. Further, after the film forming process is performed, when the bonding force by metal diffusion bonding is weakened, the lower metal member that is screwed is used for screwing so that the lower metal member is detached from the upper metal member by its own weight. A step of holding the gas shower head in a loosened state and heating the gas shower head in this state to separate the plurality of metal members from each other may be provided.

  In such a method, each metal member constituting the gas shower head is heated by attaching at least one of a heating unit for heating the substrate by mounting the gas shower head on the processing container and a heating unit provided in the gas shower head. It is preferable to carry out using.

  According to the present invention, in a gas shower head that is configured by overlapping a plurality of metal members and can supply a plurality of types of film forming gases to the substrate, different types of gaps are generated from the contact surfaces of the metal members. It is possible to prevent the deposition gas from being mixed. According to another invention, generation of particles can be suppressed by applying the gas showerhead to a processing apparatus.

  Embodiments of a film forming apparatus to which a gas shower head according to the present invention is applied will be described below with reference to FIGS. Reference numeral 11 denotes a chamber which forms a processing container made of, for example, aluminum. In this chamber 11, a mounting table 12 having a disk shape slightly larger than the wafer W for mounting a wafer W as a substrate, and the mounting table The support body 13 which supports 12 on the lower side is provided. A first heater 14 that forms a heating unit using, for example, a resistance heater is embedded in the mounting table 12, and for example, the temperature of the wafer W is uniformly increased over the entire surface during the film formation process, or In order to heat the gas shower head to a predetermined temperature during each operation of assembling and disassembling the gas shower head, which will be described later, for example, the temperature is controlled according to each application from the power supply unit 15 provided outside the apparatus. .

  A gas shower head 3 constituted by a gas shower head main body 30 and a shield part 30 a that supports the side thereof is provided on the ceiling of the chamber 11. The gas shower head 3 is connected to gas supply pipes 21 and 22 forming a gas supply path, and is mounted on the mounting table 12 through a large number of holes (not shown here) formed in the lower end surface thereof. A film forming gas is supplied to the surface of the wafer W to be formed. In addition, a second heater 23 is provided on the upper surface of the gas shower head 3, and the temperature is controlled by the power supply unit 15 in the same manner as the first heater 14 described above. Furthermore, the gas shower head 3 is connected to a high frequency power supply unit 20b through a matching unit 20a, so that the film forming gas supplied to the wafer W during the film forming process can be converted into plasma to promote the film forming reaction. It has become.

  A gate valve 16 for loading and unloading the wafer W is provided on the side of the chamber 11. The mounting table 12 is provided with lift pins 17 (actually, for example, three) that can project and retract so that the wafer W can be transferred to and from a transfer arm (not shown) that has entered through the gate valve 16. Yes. The lift pins 17 are lifted and lowered by the lifting mechanism 17b through a support member 17a that supports the lower end portion thereof. An exhaust port 11a is formed around the support 13 as shown in the figure, and a vacuum pump 19 is connected to the exhaust port 11a via an exhaust pipe 18 and a valve V1.

  Next, the shower head main body 30 which is a main part of the present embodiment will be described with reference to FIGS. FIG. 2 is a longitudinal sectional view showing the entire structure of the shower head main body 30. The shower head main body 30 has a structure in which, for example, three metal members made of nickel are stacked vertically. The contact surface (joint surface) of each metal plate is processed by, for example, machining, mechanical polishing, chemical polishing, or electrolytic polishing, and the roughness is, for example, about Ra 3.2 to 0.2.

  FIG. 3 is an exploded view of these three metal plates. For convenience, each metal plate will be referred to as an upper step portion 3a, a middle step portion 3b, and a lower step portion 3c. However, the joint surface P1 between the upper step portion 3a and the middle step portion 3b and the joint surface P2 between the middle step portion 3b and the lower step portion 3c are joined together by diffusion bonding so that there is no gap between the upper step portion 3a and the middle step portion 3b. A space 31 is formed, and a space 41 is formed between the middle step portion 3b and the lower step portion 3c. A large number of first gas passages 32 penetrating from the space 31 to the lower step portion 3c and a second gas passage 42 communicating with the space 41 without being communicated with the space 31 are formed in the middle portion 3b. ing. A large number of first holes 33 that communicate with the first gas flow path 32 and a large number of second holes 43 that communicate with the space 41 are formed in the lower stage portion 3 c. Further, the upper step portion 3a and the middle step portion 3b can be fixed (screwed) by the bolt 34a, and similarly, the middle step portion 3b and the lower step portion 3c can be fixed by the bolt 34b. Has been.

  As described above, the gas supply pipe 21 and the gas supply pipe 22 are connected to the upper surface of the upper stage portion 3a. The gas supply pipe 21 communicates with the space 31, and the gas supply pipe 22 is connected to the second gas. The space 41 communicates with the space 41. Here, the shape of the space 31 and the space 41 will be described with reference to FIG. 3. The space 31 is a circle surrounded by, for example, a cylindrical recess 35a formed on the upper surface of the middle step 3b and a lower surface 35b of the upper step 3a. It is a columnar space and is configured as an integral space communicating in the lateral direction. The space 41 is surrounded by a large number of, for example, columnar concave portions 36a formed on the lower surface of the middle step portion 3b and the upper surface 36b of the lower step portion 3c, and each of the concave portions 36a is laterally arranged through a flow path (not shown). It is configured as an integral space that communicates.

  For this reason, the film forming gas sent from the gas supply pipe 21 is dispersed in the lateral direction in the space 31, travels toward the first hole portion 33 through the first gas flow path 32, and reaches the gas supply pipe 22. The film-forming gas sent from the air flows into the space 41 through the second gas flow path, and is dispersed in the lateral direction in the space 41 toward the second hole 43. That is, the gas shower head 3 is a matrix type in which two kinds of film forming gases flowing through the gas supply pipes 21 and 22 are directed to the wafer W independently without being mixed in the shower head main body 30.

  Next, the upstream side of the gas supply pipes 21 and 22 will be described. A first film-forming gas (TiCl 4) supply source 21 a is provided upstream of the gas supply pipe 21 via a valve V 2, and a second film-forming gas (TiCl 4) is provided upstream of the gas supply pipe 22 via a valve V 3. NH3) supply sources 22a are connected to each other. The first and second film forming gas supply sources 21a and 22a store liquid sources that are respective film forming components. For example, during the film forming process, the liquid source is vaporized using a carrier gas to form a vapor. The vapor is sent to the gas shower head 3 through the gas supply pipes 21 and 22.

Next, the operation of the above embodiment will be described with reference to the process chart shown in FIG. First, prior to the film forming process on the wafer W, the gas shower head 3 is assembled. For example, three metal plates constituting the shower head main body 30 disassembled to perform cleaning or the like are joined. For example, the upper stage portion 3a, the middle step portion 3b, and the lower step portion 3c are connected to a predetermined portion outside the chamber 11, for example. It is closely attached in the direction and position, and a bolt 34a is provided between the upper step portion 3a and the middle step portion 3b, and a bolt 35b is provided between the middle step portion 3b and the lower step portion 3c, for example, at a torque of 30 kg / cm ² . Temporarily fix (step S1). The temporarily stopped gas shower head 3 is mounted at a predetermined position in the chamber 11, nitrogen gas is supplied into the chamber 11 from a nitrogen gas supply means (not shown), for example, at 3600 cc / min, and the pressure is 1.33322 × 10. ^The exhaust gas flow rate is adjusted to ² Pa (1 Torr), and heating in the chamber 11 is started using the first heater 14 and the second heater 23 in this state. Then, nickel forming the bonding surface P1 between the lower surface of the upper step portion 3a and the upper surface of the middle step portion 3b in the shower head body 30 and the bonding surface P2 between the lower surface of the middle step portion 3b and the upper surface of the lower step portion 3c is melted. Metal diffusion bonding proceeds at the extreme surface layer while filling minute gaps on the surfaces P1 and P2. For example, the assembly of the gas shower head 3 is completed by continuing the heating as it is until the bonding surface P1 or the bonding surface P2 is separated even if the bolts 34a and 34b are removed. Specifically, it is necessary for the bonding surfaces P1 and P2 to obtain a predetermined bonding force. For example, when the area of the bonding surface P1 is 50 cm ² or more, preferably 100 cm ² or more, heating is performed at 500 ° C. or more for 12 hours. Preferably it is done.

  Subsequently, a film forming process is performed on the wafer W. First, when the gate valve 16 is opened, a transfer arm (not shown) enters the chamber 11, and the wafer W is transferred from the transfer arm to the lift pins 17. Thereafter, the lift pins are lowered to place the wafer W on the center of the mounting table 12, and the film forming process shown in step S3 is started. In this process, first, the surface temperature of the wafer W is raised by the first heater 14 and the second heater 23 until the surface temperature reaches a predetermined process temperature, for example, 450 ° C. to 700 ° C., the valve V1 is opened, and the inside of the chamber 11 is predetermined. Exhaust is performed from the vacuum pump 19 through the exhaust port 11a so that the degree of vacuum is maintained, and then the valves V2 and V3 are opened to start supplying the film forming gas to the gas shower head 3. At this time, a control unit (not shown) adjusts the flow rate of each film forming gas via, for example, a flow rate adjusting unit (not shown) so that the TiCl 4 gas and the NH 3 gas are directed to the gas shower head 3 at a predetermined flow rate.

  In the gas shower head 3, the TiCl 4 gas and the NH 3 gas are dispersed without being mixed with each other while being directed downward in each flow path, and the first hole portion 33 and the second hole that are alternately arranged. It is evenly supplied to the entire surface of the wafer W via the portion 43. The film forming gas is decomposed by receiving thermal energy radiated from the wafer W in the vicinity of the surface of the wafer W, and a TiN thin film is formed on the surface of the wafer W by a chemical vapor reaction by the thermal energy. . After a predetermined time elapses, the valves V2 and V3 are closed to stop the supply of the film forming gas, the heating by the first heater 14 is stopped, and a predetermined post-process in the chamber 11 is performed. The wafers W are unloaded in the reverse order.

  When the gas shower head 3 performs a predetermined number of film formation processes, for example, a cleaning gas such as ClF3 gas sent from a gas supply source (not shown) is supplied into the chamber 11 to remove unnecessary films formed in the chamber 11. (Cleaning) is performed (step S4). Thereafter, the gas shower head 3 is disassembled (disassembled) again to clean the inside (step S5). The disassembling process of the gas shower head 3 is basically performed in the reverse order of the assembly process described in steps S1 and S2. First, the gas shower head 3 is removed from the chamber 11 and then the process is performed in step S1. The bolts 34a and 34b are loosened by about 1 mm, for example, compared to the temporary fixing performed. When the gas showerhead 3 is returned to the chamber 11 and heated again, the bonding force at the joint surfaces P1 and P2 is weakened, and the metal plates constituting the showerhead body 30 are detached.

  The heating conditions at this time are substantially the same as in step S2, but the heating temperature is preferably the same or slightly higher than that during assembly. For the shower head body 30 similar to the example described above, When the heating temperature is 500 ° C., it is preferably 500 ° C. or higher, preferably 550 ° C. or higher when decomposing. Then, heating is stopped, and after cooling, the upper step portion 3a, the middle step portion 3b, and the lower step portion 3c are separated from each other, removed from the chamber 11, and the bolt 34a and the bolt 34b are removed, thereby completing the disassembly process.

  As described above, according to the present embodiment, since the plurality of metal surfaces constituting the gas shower head 3 (shower head body 30) are chemically bonded by heating, for example, the metal plate such as screwing is used. A gap that cannot be eliminated by mechanical bonding, that is, a gap due to minute unevenness that cannot be eliminated by mechanical polishing on the joint surface can be eliminated. Accordingly, in the film forming gas flow path formed across the bonding surfaces between the metal plates, gas leakage at the bonding surfaces can be completely suppressed. Mixing of gases can be suppressed, and generation of reaction products associated with the mixing can be completely suppressed.

  That is, in the present embodiment, the above-mentioned mixing is completely prevented, so that each film-forming gas is highly accurate on the entire surface of the wafer W along the arrangement of the holes 32 (32a, 32b) of the gas shower head 3. In-plane uniformity of the thin film is improved. Further, by suppressing the generation of reaction products in the gas shower head 3, the cause of the particles disappears, so that there is an effect that the possibility of contamination of particles on the wafer W is completely eliminated and the yield of products is improved.

  Furthermore, in this embodiment, since a brazing material is not used for joining the metal surfaces, the joining surfaces can be easily separated by the same procedure as the assembly of the gas shower head 3, for example, in the gas shower head 3. Each formed gas flow path can be easily cleaned.

  In the present embodiment, both the assembly and disassembly of the gas shower head 3 are performed in the chamber 11 where the film forming process is performed. These operations are performed, for example, in a heating furnace provided separately from the chamber 11 or the like. You may make it perform in. The metal constituting the gas shower head 3 may be other than nickel as long as it does not react with the film forming gas and can be metal diffusion bonded and separated by heating. Similar effects can be obtained even with an alloy, or a nickel or chromium alloy. Furthermore, as long as the same effect is obtained, the plurality of metal plates need not be the same type of metal. Specifically, for example, a combination of a nickel metal plate and an aluminum metal plate is possible. In addition, when heating the gas shower head 3 during assembly and disassembly, the heater used may be either the first heater 14 or the second heater 23.

  Further, the configuration of the shower head main body 30 is not limited to that of the above-described embodiment, and the above-described embodiment is also provided by the shower head main body 5 shown in FIG. 6 used for forming a Ti film or a TiN film, for example. The same effect can be obtained. The configuration of the shower head body 5 will be briefly described below. The shower head main body 5 is also composed of a plurality of, for example, three-stage metal plates. If these metal plates are referred to as an upper step portion 5a, a middle step portion 5b, and a lower step portion 5c in this order from the upper side, the respective joint surfaces Q1 and Q2 are metal diffusion. In addition to this, it can be fixed by a bolt 50 penetrating from the lower surface side of the lower step portion 3c to the upper step portion 3a. Between the upper step portion 5a and the middle step portion 5b, a space 51 is formed by forming a recess on the upper surface of the middle step portion 5b, and the lower surface of the middle step portion 5b is formed between the middle step portion 5b and the lower step portion 5c. Spaces 61 each formed with a recess are formed in each.

  A number of first gas passages 52 that communicate from the space 51 to the lower step portion 5c and a second gas passage that does not communicate with the space 51 and communicates from the space 61 to the upper step portion 5a are provided in the middle portion 5b. 62 are formed. A large number of first holes 53 communicating with the first gas flow path 52 and a large number of second holes 63 communicating with the space 61 are formed in the lower stage portion 5c, respectively. For example, the portions 53 and the second hole portions 63 are arranged to be staggered. Regarding the upper stage portion 5a, a gas supply pipe 54 for supplying a first film-forming gas and a gas supply pipe 64 for supplying a second film-forming gas are connected to the upper surface. Further, in the upper stage portion 5a, a third gas flow path 55 for communicating the gas supply pipe 54 and the space 51, and a fourth gas flow path 65 for communicating the gas supply pipe 64 and the second flow path 62, Is formed. Therefore, the first film forming gas is supplied to the wafer W through the path of the gas supply pipe 54 → the third gas flow path 55 → the space 51 → the first gas flow path 52 → the first hole 53. The second film forming gas is supplied to the wafer W through a path of the gas supply pipe 64 → the fourth gas flow path 65 → the second gas flow path 62 → the space 61 → the second hole 63, and There is no mixing in the shower head body 5. In the present embodiment, the metal used for the shower head body 5 is the same as that in the above-described embodiment, so that joining and detachment by heating can be performed under the same conditions.

In order to confirm the heating conditions and the bonding strength between nickels in the above-described embodiment, a set of nickel test pieces was prepared, and a test was conducted to examine the relationship between the bonding strength between them and the heating temperature. The contact area between the test pieces used in this test was 25 cm ² , and a heating apparatus similar to the film forming apparatus used in this embodiment was used. The pressure in the chamber of the film forming apparatus was maintained at 1.33322 × 10 ² Pa (1 Torr), nitrogen gas was supplied at a flow rate of 3600 cc / min, and the heating time was set to 12 hours.

FIG. 5 is a characteristic diagram showing the results of this test. As shown in the figure, it can be seen that the bonding strength of nickel increases rapidly when the temperature of the test piece is 500 ° C. or higher. Note that the bonding force α indicated by the alternate long and short dash line in the figure indicates that the bonding surface P1 does not separate when the area of the bonding surface P1 is 50 cm ² or more, preferably 100 cm ² or more in the gas shower head 3 used in the present embodiment. Power. It was confirmed that the metal surfaces diffusion-bonded in this way are connected with a high bonding force, and a minute gap between the bonded surfaces is eliminated.

1 is a longitudinal sectional view showing an embodiment of a film forming apparatus according to the present invention. It is a longitudinal cross-sectional view which shows the structure of the shower head main body provided in the said film-forming apparatus. It is the longitudinal cross-sectional view which decomposed | disassembled and showed the said shower head main body. It is process drawing which shows the effect | action in this Embodiment. It is a characteristic view which shows the result of the test done in order to confirm the effect of this Embodiment. It is a longitudinal cross-sectional view which shows the structure of the shower head main body in other embodiment of the film-forming apparatus which concerns on this invention. It is a schematic explanatory drawing shown about the subject of the gas shower head which concerns on a prior art. It is a schematic explanatory drawing shown about the subject of the gas shower head which concerns on a prior art.

Explanation of symbols

W Semiconductor wafers P1, P2 Bonding surfaces V1, V2, V3 Valve 11 Chamber 12 Mounting table 14 First heater 15 Power supply unit 21, 22 Gas supply pipe 23 Second heater 3 Gas shower head 3a Upper stage part 3b Middle stage part 3c Lower stage portion 30 Shower head main body 30a Shield portions 31, 41 Space 32 First gas flow path 33 First hole 42 Second gas flow path 43 Second hole

Claims (9)

In the gas shower head that is provided facing the surface of the substrate and has a large number of holes in the surface facing the substrate, and simultaneously supplies the gas sent from the gas supply path to the substrate through these holes,
By heating in a state where a plurality of metal members are stacked one above the other, a shower head body in which the contact surfaces of each metal member are metal diffusion bonded,
A gas shower head, comprising: a plurality of gas flow paths that are formed so as to penetrate the contact surface in the shower head body and are independently formed. 2. The gas shower head according to claim 1, wherein the metal member is selected from nickel, nickel alloy, aluminum and aluminum alloy. A processing vessel provided with a mounting table for mounting the substrate;
A vacuum pump for evacuating the processing vessel;
A processing apparatus comprising: the gas showerhead according to claim 1 or 2 provided in the processing container. In the processing method of supplying a gas from a gas shower head facing the substrate and processing the substrate placed on the mounting table in the processing container,
The gas shower head is formed by metal diffusion bonding between the contact surfaces of each metal member by heating the metal member in a state where a plurality of metal members are overlapped, and supplying gas from the gas shower head to the substrate, A processing method characterized by performing processing on the surface of the substrate. 5. The processing method according to claim 4, wherein the metal member is selected from nickel, a nickel alloy, aluminum, and an aluminum alloy. In a method for maintaining a processing apparatus for supplying a gas to a substrate from a gas shower head facing the substrate and processing the surface of the substrate with respect to the substrate placed on a mounting table in a processing container,
A processing apparatus comprising a step of assembling a gas shower head by metal diffusion bonding the contact surfaces of each metal member by heating the plurality of metal members constituting the gas shower head in a stacked state. Maintenance method. 7. The step of assembling a gas shower head includes a step of screwing together a plurality of metal members in addition to the step of metal diffusion bonding the contact surfaces of the metal members. Maintenance method of the processing apparatus. After the film forming process, when the bonding force by metal diffusion bonding is weakened, the screw is used for screwing so that the screwed lower metal member is detached from the upper metal member by its own weight. 8. The processing apparatus according to claim 7, further comprising a step of holding the gas shower head in a loosened state and heating the gas shower head in this state to separate a plurality of metal members from each other. Maintenance method. The gas shower head is heated using at least one of a heating unit for heating the substrate by mounting the gas shower head on the processing vessel and a heating unit provided in the gas shower head. The maintenance method of the processing apparatus of 6, 7 or 8.

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