200930853 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種二氧化矽和三 半導體製造商業品質、特別是單片一化合物之能量晶圓片 複式高密度均勻對定位結晶排列之 :^^期性晶體原子重 雷射激光熱麟神原料和種晶a體:^法。以及真空高溫 融液態师種晶晶體之時再 =磁盤引力’周環旋動炫 速高功率骤間受使晶體、二:卜：祕力效應’達到高 具適時間切斷絕緣激光高之雜啟誠力壓製内模 ❹ Ο 之超尺恤陶 【先前技術】 列方式來ί 係根據原子在固體材料内部的排 則可循。-般非崎膜是非常紊亂沒有規 電池，它能夠把陽光ίί日日柯用來製造太陽能 原子排觸有此重;〕ab直接轉換魏。在多晶態結構中的 由多種不上以單 化而成。在單晶態結構中的曰f夕疋以炫融的石夕鑄造固 把石夕原·地侧。㈣製備方法是 的製程圓柱單晶石夕石定。另-種製備單晶棒 室裡、加熱軸$ 態轉垂紐置綠溫爐反應 的區域、溶體會藉炫化，再把種晶晶體熔入已炼化 猎者垃姆的表面張力而懸浮在種晶晶體和多晶 200930853 先、的石夕棒之間，然後加熱線圈便會緩慢往上升高 部分的多晶態轉制b、此時接近種晶晶體末端的合 ，，並形成和種晶晶體相同方向的晶體及至g =，機台自動修整切片晶圓的邊緣形狀== 磨示去切割或輪磨所造成的鋸痕或表面破壞岸。:义、、 Ο200930853 IX. INSTRUCTIONS: [Technical Field] The present invention relates to a commercial wafer of ceria and three semiconductors, in particular a monolithic compound, an energy wafer, a high-density uniform alignment crystal alignment: ^ period crystal atomic heavy laser laser heat Lin Shen raw materials and seed crystal a body: ^ method. And when the vacuum high temperature melt liquid crystals crystallize the crystals again = disk gravity 'circumferential ring rotation speed high power sudden intervening crystals, two: Bu: secret force effect' to achieve high time to cut off the insulation laser high Kaicheng force suppresses the internal model ❹ Ο Super-foot-tap Tao [previous technology] The column method is based on the order of the atoms inside the solid material. - The general non-seal film is very disordered and has no battery. It is able to use sunlight ίί 日 日 to make solar energy. The atomic touch has this weight;] ab directly converts Wei. In the polycrystalline structure, it is not monolithic. In the single crystal structure, the 曰f 疋 疋 疋 疋 炫 炫 炫 炫 炫 炫 炫 炫 疋 疋 疋 疋 疋 疋 疋 石 石(4) The preparation method is a process cylindrical single crystal stone Xi Shiding. In another type, a region where a single crystal rod chamber is prepared, a heating shaft is rotated, and a solution is placed in a green warm furnace, the solution is condensed, and the seed crystal is melted into the surface tension of the refining hunter ram. Between the seed crystal and the polycrystalline 200930853, the heating coil will slowly change the polycrystalline state of the upper portion to b, at this time close to the end of the seed crystal, and form and seed Crystals in the same direction of the crystal and to g =, the edge shape of the machine automatically trims the sliced wafer == Grinding the saw marks or surface damage caused by cutting or grinding. :Yi,, Ο
Q 【發明内容】 已知之晶圓製造技術僅限於非晶態、多晶離、 例如：非晶較以電法^ 以炫融的辦造111化而成。單㈣是把砍元素溶融於石ί 。中再把種晶插人液面，同時以緩慢速率旋丄‘： 或把多㈣棒放置高溫反應爐中滅炫化 散=ΐ 應8+使補分子擴 會出其製程不但相當複雜費時長久、同時並 差排的不均勻狀態之晶圓體結構。 小厚产的衫s ^速率面、成本低、性質佳且均勻無缺陷之最 製造技術方法，以應國際間界之晶圓特殊市場 生器本触—魏㈣高熱能產 、种將夕㈣和種晶晶體縣於晶鼠絲備腔巾再應轉渦 200930853 旋電磁脈衝重力磁場， 受使之週期性高密戶均白^二 旋環帶動重複式結晶原子、 化凝結晶圓晶體在、及至_低溫瞬間轉 均勾對定位晶晶體性質之^曰^，粒尺寸狀態下之高密度 達到高速率製成單片理使晶圓單片—體成品， ❹ ❹ 《對定位晶是種介於單晶備巧f去。 性質之晶圓製程系統結構:或‘為it;體r圓度;高 【實施方式】 以根據本發明之最佳晶圓製造裝置： ，產生器安裝固置於液態氮冷峨^—^電方磁， 木二重層體伸縮式内.中.外圓形体特殊 2固定整體晶II製備之上層模組器的莫具 下層模組基座平台時既可形在下伸出抵住 備腔。當該原料槽輸送注入適量厚比重的製 後、立即由雷射激光產生器激發射入雷光；^埶 ζ阳體之 生長腔中。〔請參考圖一 圖二曰曰圓 轉所溶化之液態石夕和種晶晶體、受使其^旋 t均勻對定健晶排列，之後適時應峨下鈦合金 二力間切斷絕緣晶圓生長腔中的激光高溫熱能及n 轉化凝結㈣耻絲小奈緣雛厚仏能量晶品二^ 200930853 參考圖:3.1〕。在晶長製備腔中之冷凝内模 體表面純是^導電性鈦合金屬為其介面導j 件、以能應用高速率轉化高密度對定位晶 =金冷凝⑽具_絲於中心頂端 適 滑動以職'最佳製程之厚度晶圓片 j下 =ίΪίΐ=ί複合中層模具’既;簡便;出單片成 1 ί 7 '的晶圓製備之製程技術方法。〔請參考 Ο 【圖式簡單說明】 圖一 圖1· 1晶圓生長製備機模縱剖圖。 圖丨· 2雷射激光產生器縱剖圖。 圖1. 3晶圓生長製備機模縱剖圖。 圖二 圖2.1晶圓製備機模立剖圖。Q [Summary of the Invention] The known wafer fabrication technology is limited to amorphous state, polycrystalline ionization, for example, amorphous is formed by an electrical method. Single (four) is to melt the chopping element into the stone. In the middle, the seed crystal is inserted into the liquid surface, and at the same time, it is rotated at a slow rate. ': Or the multi-(four) rod is placed in a high-temperature reaction furnace to extinguish the reddening powder = ΐ 8+ to make the molecular expansion of the compound is not only complicated but also time-consuming and long-lasting The wafer structure of the uneven state at the same time. Small-yield shirts s ^ rate surface, low cost, good quality and uniform without defects, the most manufacturing technology method, in response to the international market, the wafer special market life touch - Wei (four) high heat energy production, species will be eve (four) And the seed crystal crystal county in the crystal mouse silk preparation cavity should be turned vortex 200930853 rotating electromagnetic pulse gravity magnetic field, subject to the periodic high-density household white ^ two rotating ring to drive the repetitive crystal atom, condensed crystal round crystal in, and _Low-temperature transient turn-to-hook to the properties of the crystallized crystals, the high density in the grain size state reaches a high rate, and the monolithic wafer is made into a single piece, the finished product, ❹ ❹ The single crystal is ready to go. Wafer process system structure of nature: or 'for it; body r roundness; high [implementation] With the best wafer fabrication apparatus according to the present invention: , the generator is mounted and fixed in liquid nitrogen cold 峨 ^ - ^ Square magnetic, wood double layer telescopic inner, middle and outer circular body special 2 fixed integral crystal II to prepare the upper layer module of the lower layer module base platform can be formed to protrude downward against the preparation cavity. When the raw material tank is conveyed and injected into an appropriate amount of thick specific gravity, it is excited by the laser laser generator to emit lightning light; ^ 埶 in the growth chamber of the yang body. [Please refer to Fig. 1 and Fig. 2 for the liquid crystal and crystal seed crystals dissolved by the round turn. The crystal is crystallized and aligned, and then the titanium alloy is cut off to form the insulating wafer. High-temperature thermal energy and n-conversion condensation in the cavity (4) Shame and small-necked thick 仏 energy crystals 2 200930853 Reference: 3.1]. The surface of the condensed inner mold in the crystal length preparation chamber is purely conductive titanium metal as its interface, and can be applied at a high rate to convert high density to the positioning crystal = gold condensation (10) with _ silk at the center tip The job of 'best process thickness wafers j = Ϊ ΐ ΐ ί 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合[Please refer to Ο [Simple description of the drawing] Figure 1 Figure 1 · 1 wafer growth preparation machine longitudinal section. Figure 丨 2 longitudinal laser beam laser generator. Figure 1. Longitudinal section of a 3 wafer growth preparation machine. Figure 2 Figure 2.1 Vertical section of the wafer preparation machine.
圖2. 2人工鑽激光管立面圖。 圖三 圖3.1晶圓製備機模立剖圖。 圖3. 2渦旋電磁脈衝產生器立面圖。 圖四 圖4.1晶圓製備模組下層基座台剖面圖。 圖4. 2晶圓製備模組上層内模立剖圖。 200930853 圖五 圖5.1雷射激光產生器縱剖面圖。 圖5. 2雷射激光產生器立面圖。 圖六 圖6.1上層欽合金餘刻模平面圖。 圖6. 2下層鈦合金拋光模平面圖。 圖七：晶圓製備製程真空室平面圖 圖7. 21雷射激光產生器平面圖。 ° 圖7. 22晶圓生長製備機模平面圖。 圖7. 23夾取晶片機器手臂平面圖。 圖7.24晶片置台輸送機平面圖。 圖7. 25真空絕緣門平面圖。 【主要元件符號說明】 1. 機台固定骨架。 2. 液壓深高機。 〇 3.複合金屬外模。 4. 液壓伸縮鋼管。 5. 鈦合金冷凝内模。 6. 晶圓生長製備腔。 7. 冷凝液態氮槽模。 8. 渦旋電磁脈衝產生器 9. 電流衝壓冷極體。 10. 機器模鋼骨架。 11. 陶兗複合中模。 12. 鈦合金基面模。 13. 液壓應力旋管， 14. 模組具基座台。 15. 液恕氮流通孔。 16. 人工鑽激光管。 17. 雷射熱能激光腔。 18. 雷射激光射控管。 19. 激光熱能絕緣閘。 20. 複合陶兗鋼板。 121.對定位晶晶圓成品。 9Figure 2. 2 artificial drilling laser tube elevation. Figure 3 Figure 3.1. Vertical section of the wafer preparation machine. Figure 3. Elevation diagram of a 2 vortex electromagnetic pulse generator. Figure 4 Figure 4.1 Sectional view of the lower base of the wafer preparation module. Figure 4. Vertical section of the upper inner mold of the 2 wafer preparation module. 200930853 Figure 5 Figure 5.1 Vertical section of the laser generator. Figure 5. 2 elevation of the laser laser generator. Figure 6 Figure 6.1 A plan view of the upper layer of the alloy. Figure 6. Plan view of a 2nd titanium alloy polishing die. Figure 7: Plan view of the wafer preparation process vacuum chamber Figure 7. Plan view of the 21 laser laser generator. ° Figure 7. Plan view of the 22 wafer growth preparation machine. Figure 7. 23 Plan view of the wafer robot arm. Figure 7.24 Plan view of the wafer placement conveyor. Figure 7. 25 vacuum insulated door plan view. [Main component symbol description] 1. Fix the skeleton of the machine. 2. Hydraulic deep height machine. 〇 3. Composite metal outer mold. 4. Hydraulic telescopic steel pipe. 5. Titanium alloy condensation inner mold. 6. Wafer growth preparation chamber. 7. Condensate the liquid nitrogen tank mold. 8. Vortex Electromagnetic Pulse Generator 9. Current stamped cold electrode. 10. Machine mold steel skeleton. 11. Tao Wei composite medium mold. 12. Titanium base mold. 13. Hydraulic stress coil, 14. Module with base table. 15. Liquid nitrogen flow holes. 16. Manually drill the laser tube. 17. Laser thermal laser cavity. 18. Laser laser emission control tube. 19. Laser thermal insulation gate. 20. Composite ceramic plate. 121. Positioning the finished wafer wafer. 9