TW200930839A - Etching liquid - Google Patents

Etching liquid Download PDF

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Publication number
TW200930839A
TW200930839A TW097144320A TW97144320A TW200930839A TW 200930839 A TW200930839 A TW 200930839A TW 097144320 A TW097144320 A TW 097144320A TW 97144320 A TW97144320 A TW 97144320A TW 200930839 A TW200930839 A TW 200930839A
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Taiwan
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group
weight
polymer
nickel
repeating unit
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TW097144320A
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Chinese (zh)
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TWI464301B (en
Inventor
Daisuke Katayama
Masayo Kurii
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Mec Co Ltd
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Publication of TWI464301B publication Critical patent/TWI464301B/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/28Acidic compositions for etching iron group metals
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/04Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

This present invention provides an etching liquid capable of inhibiting corrosion due to metal except nickel (especially copper). The nickel etching liquid containing nitric acid or sulfuric acid, hydrogen peroxide, water, and a polymer having at least one repeated unit selected from the following formula (I), the following formula (II), and the following formula (III). In the formulas, R1-R5, represent the same or different hydrogen, amino, imido, cyano, azo, thiol, sulfo, hydroxyl, carbonyl, carboxyl, nitro, alkyl, cyclic alkyl, aryl, or benzyl. Further, amine contained in the repeated unit can be a form of quaternary ammonium salt.

Description

200930839 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種包含硝酸或硫酸、以及過氧化氳、 以及水之鎳蝕刻液。 【先前技術】 於包含TAB(Tape Automated Bonding)用可撓性基板, 或BGA(Ball Grid Array)封裝用基板之印刷配線板之電極或200930839 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a nickel etching solution comprising nitric acid or sulfuric acid, and barium peroxide, and water. [Prior Art] The electrode of a printed wiring board including a flexible substrate for TAB (Tape Automated Bonding) or a substrate for BGA (Ball Grid Array) packaging or

配線’或半導體製品的電極等的製造過程當中,有一藉由 電鍍或無電鍍而形成鎳皮膜的步驟。此時,於不需要的部 分所形成之鎳皮膜,係藉由钱刻液除去。 因上述電極或配線係由複數個金屬所構成,故於除去 錄皮膜之際,被要求不去侵蝕鎳以外的金屬。例如,藉由 半加成法(Semi-Additive Process)製造印刷配線板的過程當 中,於玻璃纖維布環氧樹脂浸潰基板或聚醯亞胺薄膜等之 ”邑緣基材上,經無電鍵錦鍵敷或錄蒸鍵之後,以光阻形成 電路的相反圖案,藉由銅電鍍於沒有塗覆光阻的鎳上形成 鋼電路’接著除去光阻’之後再將露出來的料行餘刻。 此情況所使用的#刻液,被要求要能夠在不侵 情況下來蝕刻鎳。 的 作為不侵餘銅而除去錄之㈣液,以往,使用 酸等之酸與過SI各备k ^月 姓刻液,通當1 刻液。此等硝酸〜過氧化氫之錄 來抑制銅的㈣而添加有添加劑(例如, 參照專利文獻1〜8)。 200930839 62-1 1070號公報 62-14034號公報 62-14035號公報 專利文獻1 :日本專利特公昭 專利文獻2 :日本專利特公昭 專利文獻3 :日本專利特公昭 專利文獻4 .日本專利特表昭58-5〇〇765號公報 專利文獻5 :日本專利特開平6_57454號公報 專利文獻6:曰本專利特開平9_228〇75號公報 專利文獻7.日本專利特開2〇〇1_14〇〇84號公報 專利文獻8 .曰本專利特開2〇〇5 36256號公報 但是,即便是此等則液也無法充份抑制銅的侵姓 市場上期望能進一步抑制銅的蝕刻之鎳蝕刻液。In the manufacturing process of the wiring or the electrode of the semiconductor article or the like, there is a step of forming a nickel film by electroplating or electroless plating. At this time, the nickel film formed in the unnecessary portion is removed by the money engraving. Since the electrode or the wiring is composed of a plurality of metals, it is required to prevent the metal other than nickel from being etched when the film is removed. For example, in the process of manufacturing a printed wiring board by a semi-additive process, a glass fiber cloth epoxy resin impregnates a substrate or a polyimide film, etc. After the key bond or the steaming key is printed, the opposite pattern of the photoresist forming circuit is formed by copper plating on the nickel without the photoresist to form a steel circuit 'and then removing the photoresist' and then exposing the exposed material. The #刻液 used in this case is required to be able to etch nickel in the absence of intrusion. The liquid is removed as the non-invasive copper (4) liquid. In the past, acid such as acid was used and the SI was prepared. The engraving liquid is the first engraving liquid. The nitric acid-hydrogen peroxide is recorded to suppress the copper (4) and the additive is added (for example, refer to Patent Documents 1 to 8). 200930839 62-1 1070#62-14034 Japanese Patent Laid-Open Publication No. JP-A No. JP-A No. Sho. :Japanese Patent Laid-Open No. 6_57454 Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. It is such a liquid that does not sufficiently inhibit the invasion of copper. The nickel etching solution which is expected to further suppress copper etching is desired.

夠抑制鎳以外的金屬的侵蝕 為了達到上述目的,本Suppresses the erosion of metals other than nickel. In order to achieve the above objectives, this

的长# ’特別是銅的侵蝕之鎳蝕刻液。 的,本發明之蝕刻液,其特徵在於: 以及過氧化氫、以及水之鎳蝕刻液當 <式(I)、下述式(Π)及下述式(皿) 中之至少1種重複單位的聚合物;一 CH广 9H-CH2— 丄·· …⑴ 7 '(II)200930839The long # ' particularly copper etched nickel etchant. The etching solution of the present invention is characterized in that: at least one of the hydrogen peroxide and the nickel etchant of water is at least one of the formula (I), the following formula (Π), and the following formula (dish). Unit of polymer; a CH Guang 9H-CH2 - 丄···(1) 7 '(II)200930839

一 CH2—CH—CH-CH 2One CH2—CH—CH-CH 2

CH 2CH 2

N I ❹ r I II IR2 ^ N R5 (III) r4 炉其(其二iRl〜R5為氯、胺基、亞胺基、氰基、偶氮基、 —1土 ^土經基、幾基、羧基、硝基、燒基、環烧基、 :香基或苯甲基’可為相同或相異’ X,該重複單位内所 匕含之胺亦可為第四級錢鹽的形態)。A外,上述本發明之 蝕刻液,雖為鎳蝕刻液,然而其中的「鎳」,不僅為純鎳 也包3 了鎳合金。X,關於下述「銅」也同樣如此。在此, 所明上述「合金」,係指例如主金屬含量達到50重量%以 上之金屬。 依據本發明之蝕刻液,因為包含了具有選自上述式 (I)、上述式(n)及上述式(皿)中至少1種之重複單位的聚合 物,所以可以抑制鎳以外的金屬,特別是銅的侵蝕。 【實施方式】 本發明之蝕刻液,其特徵在於:於含有硝酸或硫酸、 以及過氧化氫、以及水之鎳蝕刻液當中,含有具有選自從 200930839 下述=)、下述式⑻及下述式㈤令之至少】種重複單位 的聚β物《本發明的蝕刻液中,因 .夕卜的金屬的侵餘抑制劑,所以可以㈣物成為錄以 J Μ從鎳與其他的 丘 的被處理材當令,選擇性地只就鎳進行钱刻。特別曰在、上 述其他的金屬為銅的時候,作 疋 的機能可以更有效地發揮。 4聚合物之侵勒抑制劑 本發明之蝕刻劑的酸成分,係溶解以過氧化氫氧化之 鎳的成分,因鎳的溶解性高, 氧化虱軋化之 © 忐八作盔姑 ^ 吏用硝酸或硫酸。又,酸 具有促進鎳的氧化的作用。此等酸成 刀虽硫酸與硝酸相較之下溶解鋼的作用雖丨,Β 解鎳的作用也小。因此 ’、’但疋溶 _ α ^ 攸作菜時間的觀點來看,作Α太 發明的酸成分,使用硝酸較佳。 " 上述姓刻液中的酸成公 右丨、为认 的濃度,雖然視蝕刻速度、蝕 38.5重量%,更佳為3 T但較佳為U重量%〜 ❹以:二·:重量“上的時候,因為钱刻速度會加快,故可 %以上貝肆又’藉由將酸成分的濃度設為38.5重量 姓。上’則可以輕易地抑制錄以外的金屬(特別是銅)的侵 上述餘刻液中的過氧 錦的除去能力來作調整,作H農度’雖然視姓刻速度與 量%,更佳為0.035重量0/較佳4〇.0175重量%〜17.5重 %〜7.。重量%。當過氧二〜14.°重量%,最佳為。_35重量 時候,因為制速度會加=的濃度為〇.0175重量%以上的 加快’故可以迅速地除去鎳。另一 200930839 方面,藉由將過氧化氫濃度設為17.5重量%以下,則可以 輕易地抑制鎳以外的金屬(特別是銅)的侵钱。 於本發明之蝕刻劑甲,作為侵蝕抑制劑係配合有具有 ,自上述式(η、上述式(Π)及上述式(瓜)中至少1種之重複 單位的聚合物。此外,該聚合物亦可為選自上述式(1)、上 ,式(Π)及上述式w中至少1種之重複單位與其他的重複 皁位所構成之共聚物、亦可為由上述式(1)、上述式^及 上述式(瓜)中所構成之同元聚合物、亦可為選自上述式 (I)、上述式(II)及上述式(瓜)中之2種以上之重複單位所構 成的共聚物。 具有上述式(I )所示之重複單位之聚合物,例如可以例 示以環氧氣丙烷作為單體使用之縮合聚合物,其種類並無 特別限定’例如,可以從市售的界面活性劑中適當選擇。 其t,從鎳與銅共存之被處理材中選擇性地只就鎳進行蝕 刻的時候’以S有由環氧氣丙院與氣化合物所形成之重複 ❺單位的聚合物較佳,斗寺別是具有以下述式⑽)所示之重複單 位之聚合物較佳。NI ❹ r I II IR2 ^ N R5 (III) r4 furnace (the second iR1 ~ R5 is chlorine, amine, imine, cyano, azo, -1 soil ^ soil base, several groups, carboxyl The nitro group, the alkyl group, the cycloalkyl group, the aryl group or the benzyl group may be the same or different 'X, and the amine contained in the repeating unit may also be in the form of a fourth-grade money salt). In addition to the above, the etching liquid of the present invention is a nickel etching liquid. However, the "nickel" is not only pure nickel but also a nickel alloy. X, the same is true for the following "copper". Here, the term "alloy" as used herein means, for example, a metal having a main metal content of 50% by weight or more. According to the etching liquid of the present invention, since a polymer having a repeating unit selected from at least one of the above formula (I), the above formula (n), and the above formula (dish) is contained, it is possible to suppress a metal other than nickel, particularly It is the erosion of copper. [Embodiment] The etching solution of the present invention is characterized in that the nickel etching solution containing nitric acid or sulfuric acid, hydrogen peroxide, and water contains the following formulas selected from 200930839 =), the following formula (8), and the following (5) At least one of the repeating units of the poly-β substance "In the etching liquid of the present invention, since the metal is an inhibitor of the residual of the metal, the (four) substance can be recorded as a J Μ from the nickel and other mounds. The processing material is ordered, and only nickel is selectively engraved. Especially when the other metals mentioned above are copper, the function of 疋 can be more effectively exerted. 4 Inhibitor of Polymer Inhibitor The acid component of the etchant of the present invention is a component which dissolves nickel oxidized by hydrogen peroxide, and has high solubility in nickel, and is used for oxidizing and rolling. Nitric acid or sulfuric acid. Further, the acid has an action of promoting oxidation of nickel. Although these acid forming knives have a role in dissolving steel in comparison with nitric acid, the effect of dissolving nickel is small. Therefore, it is preferable to use nitric acid as the acid component invented by ‘,’ but 疋α_ 攸 cooking time. " The acid in the above-mentioned surname engraving is the right concentration, although the concentration is etched, the corrosion rate is 38.5 wt%, more preferably 3 T but preferably U wt% ~ ❹ to: 2:: weight " At the time of the time, because the speed of the money will be accelerated, it can be more than %. By setting the concentration of the acid component to 38.5 weights, the upper part can easily suppress the invasion of metals other than copper (especially copper). The removal ability of the peroxygen bromine in the above-mentioned residual liquid is adjusted, and the H agricultural degree 'is preferably 0.035 weight 0 / preferably 4 〇 0. 0175 weight % ~ 17.5 weight %, depending on the speed and amount of the surname. 7. % by weight. When peroxygen is ~14.°% by weight, optimally. _35 weight, because the system speed will increase the concentration of 〇.0175% by weight or more, so nickel can be quickly removed. In another aspect of 200930839, by setting the hydrogen peroxide concentration to 17.5% by weight or less, it is possible to easily suppress the intrusion of metals other than nickel (particularly copper). The etchant A of the present invention is used as an erosion inhibitor system. Cooperating with, from the above formula (η, the above formula (Π) and the above formula (melon) a polymer of at least one repeating unit. Further, the polymer may be a repeating unit selected from the above formula (1), upper formula, formula (Π), and at least one of the above formula w and other repeating soap positions. The copolymer may be a homopolymer composed of the above formula (1), the above formula, and the above formula (melon), or may be selected from the above formula (I) and formula (II). a copolymer composed of two or more kinds of repeating units of the above formula (melon). The polymer having a repeating unit represented by the above formula (I) may, for example, be a condensation polymer using epigas oxide as a monomer. The type is not particularly limited. For example, it can be appropriately selected from commercially available surfactants. When t is selectively etched from nickel in the material to be treated in which nickel and copper coexist, 'there is a ring by S. It is preferable that the polymer of the repeating unit formed by the oxygen compound and the gas compound is preferably a polymer having a repeating unit represented by the following formula (10)).

Η Η CIO 1 2-cXI I _2 IV) 其中ur7為氫、胺基、亞胺基、氰基、偶氮基、 硫基、續酸基、羥基、 ^ 丞羰基、羧基、硝基、烷基、環烷基、 芳香基或苯曱基,可ι + j為相同或相異。又,X-為氣離子、溴 200930839 離子、碰離子、乙酸離子或碳酸離子)β 藉由使用具有上述式αν)所示之重複單位之聚合物,可 以加大對於鎳之钱刻速度(以下’稱作「ER1」)與對於銅 之蝕刻速度(以下,稱作「ER2」)間的比率(ER1 / ER2)。 藉此,可以從鎳與銅共存之被處理材中確實地只就鎳進行 蝕刻。作為此聚合物,例如可舉出二曱胺/環氧氣丙烷縮 合聚合物、二甲胺/氨/環氧氣丙烷縮合聚合物、已二酸 /二甲胺/環氧氣丙烷/二乙烯三胺縮合聚合物等。此 外,使用氨作為單體時,上述式(JV)所示之重複單位中的 R6及R7皆為曱基。此外,使用二曱胺作為單體時,上述式 (IV)所示之重複單位中的Re及r7皆為曱基。 具有上述式(Π)所示之重複單位之聚合物,例如可以例 不以二丙烯胺作為單體使用之縮合聚合物,其種類並無特 別限定,例如,可以從市售的界面活性劑中適當選擇。作 為具體例,可以舉出由二丙烯胺鹽酸鹽所構成之縮合聚合 Q 物、二丙烯胺/丙烯酸/丙烯醯胺聚合物等。此外,以二 丙烯胺作為單體使用時,上述式(11)所示之重複單位中的幻 為氣。 具有上述式(皿)所示之重複單位之聚合物,例如,可以 例示以二氰二胺作為單體使用之縮合聚合物,其種類並無 特別限定,例如,可以從市售的界面活性劑中適當選擇。 作為具體例,可以舉出二氮二胺/甲搭縮合聚合物、二氛 —胺/二乙稀三胺縮合聚合物H以二氰二胺作為單 體使用時’上述式(nr)所示知重複單位中的R2〜Rs皆為氫。 11 200930839 本發明之蝕刻液中的上述聚合物濃度,較佳為0.0001 重量%〜3重量%,更佳為0.0005重量%〜1.5重量%,最佳 為0.001重量%〜1 .〇重量。/〇。只要在上述的範圍之内,就能 夠在不妨礙鎳的蝕刻的程度抑制鎳以外的金屬的侵蝕。 ❹ Ο 上述聚合物’在全部的重複單位之中,選自上述式 (I)、上述式(π)及上述式(m)中至少1種之重複單位所占的 比例,較佳為1 〇〜100莫耳%。其原因在於,可以更加有效 地抑制鎳以外的金屬的侵蝕。此外,上述比例(莫耳分率), 例如可藉由紅外線分析法(IR)、元素分析法、液相色層 分析法等求出上述式⑴、上述式⑻、上述式(m)裡所包含 之s月b基或特疋元素的莫耳數,而計算出此等數值與數平 均分子量之間的關係、。此外,單體組成未定的時候,單體 比率即為莫耳分率。又,在灰屮 在木出上述莫耳分率之際的分母, 為包含於上述聚合物之最小的重複單位之總莫耳數。 上述聚合物’較佳為重量平均分子量為100〜100萬, 更佳為100〜500萬。只要在上述的範圍之内就能夠在不 妨礙錄的㈣的程度,抑制錄以外的金屬的侵餘。 本發明的蝕刻液中,除 ^ on 陈了上遠成分以外,在不妨礙本 發月之效果的程度亦可添加 於备从—> Μ 、他的成为。例如’作為過氧 化虱的女疋劑,亦可添加 等之酚類。磺酸等之苯磺酸類或水楊酸 右0 濃度,例如為0.01〜5重量%左 再者,為了促進銅的侵 源。作為氯離子源,例如 /果’亦可添加氣離子 舉出鹽酸,或苯胺鹽酸鹽、 12 200930839 脈鹽酸鹽、乙胺鹽酸鹽等之鹽酸鹽,或氣化録、氣化納、 氯化鋅、氣化鐵、氣化銅、氣化鎳等之氣化物等。此等氣 離子源的濃度,就氣離子而言,通常為】〜6〇沖加左右。 上述蝕刻液,藉由將上述各成分溶解於水,而可以輕 易調製。作為上述之水,以已除去離子性物質或不純物之 水為佳,例如,較佳為離子交換水、純水、超純水等。 上述蝕刻液,可以於使用時將各成分配合至既定的濃 度,亦可事先調製好濃縮液而於使用前稀释使用。上述蝕 刻液的使用方法並㈣別限定n料的㈣液的溫 度,雖無特別限制,但既然要抑制鎳以外的金屬的侵蝕, 故要更快速地蝕刻鎳較佳為於汕〜“^使用。 〔實施例〕 接著’針對本發明蝕刻液之實施例與比較例一併說 明。此外,本發明之解釋並非儘侷限於下述的實施例。 使用於表1所示之種類(A〜J)的聚合物’調製於表2 所不之組成的各個蝕刻液,並藉由下述所示之測定方法來 评價各個項目。各個蝕刻液,首先,將酸及過氧化氫溶解 於離子交換水之後,再添加聚合物來調製。關於配合的酸, 僅有實施例14使用硫酸,其餘皆使用硝酸。此外,表丄所 示重量平均分子量,於低分子量(重量平均分子量:5〇以 上未滿5萬)的情況,係使用G〇n〇tec公司製蒸氣壓式分子 1測定裝置,在試樣濃度5重量% (溶劑:甲苯)的條件下 進行測定。又,於高分子量(重量平均分子量:5萬以上 30萬以下)的情況,使用同公司製薄骐式分子量測定裝置, 13 200930839 以與上述相同的條件下進行測定。 <相對於鎳之蝕刻速度(ER1)〉 厚度1mm的壓延鎳板(高純度化學研究所製)切出 見方,於其中一面準備貼有保護膠帶的試驗片。然後,將 表2所示的各個蝕刻液(液量:各1〇〇mL)分別注入燒杯, 使用鑷子將上述試驗片浸潰於各個蝕刻液(25t)中,一邊 讓試驗片在蝕刻液中以水平方向搖動(周期:2秒),進行 φ —分鐘的蝕刻處理。然後,從處理前後的各個試驗片的重 量,藉由下式算出ERl(pm/min)。 ER1 (μιη/mhO =(處理前的重量(g)—處理後的 重量(g) +試驗片面積(m2) +鎳的密度(g /⑽3) +浸潰 時間(min ) <相對於鋼之蝕刻速度(ER2 ) > 厚度35μιη的銅箔(古河銅箔公司製GTMP )切出4cm 見方’於其中一面準備貼有保護膠帶的試驗片。然後,將 ◎ 表2所示的各個钱刻液(液量:各1〇〇mL)分別注入燒杯, 使用鑷子將上述試驗片浸潰於各個蝕刻液(25。〇)中,一邊 讓試驗片在蝕刻液中以水平方向搖動(周期:2秒),進行 一分鐘的蝕刻處理。然後,從處理前後的各個試驗片的重 量,藉由下式算出ER2 ( μιη / min)。 ER2 ( μιη / min )=(處理前的重量(g )—處理後的 重量(g ) +試驗片面積(m2 ) +鎳的密度(g / cm3 ) +浸潰 時間(min ) 又’針對各個蝕刻液,算出上述ER1與ER2之間的比 200930839 (ERl / ER2)。於表2表示各個蝕刻液的ER1、ER2及其 等的比(ER1 / ER2)。 【表1】 種類 化審法#No. CASNo. 重量平均分子量 單體組成(莫耳比) A - - 10萬〜12萬 己二酸/二甲胺/環氧氣丙烧/二乙 烯三胺縮合聚合物 (1/1/1/1 ) B 7-(1518) - 28萬 二甲胺/氨/環氧氣丙烷 (1/1/2) C - 26063-69-4 11萬 二丙烯胺鹽酸鹽 D 7-(21) - 2萬〜3萬 二氰二胺/二乙烯三胺縮合聚合 物 (1/1) E 6-(1898) - 4萬 二丙烯胺/丙烯酸/丙稀醯胺 (1/1/1) F 6-(1429) - 4萬〜8萬 甲基丙烯酸二甲胺乙酯四級化物 G 6-(1675) 30551-89-4 6萬 氣化二丙烯二甲基鍵 Η 7-(741) 9002-98-6 68130-97-2 7萬 伸乙亞胺 I 7-(741) 106899-94-9 300 伸乙亞胺 J 7-(24) - 1萬〜3萬 二甲胺/環氧氣丙烷 (1/1) *化學物質的審查及製造等的規制相關法律 15 200930839 【表2】Η Η CIO 1 2-cXI I _2 IV) wherein ur7 is hydrogen, amine, imido, cyano, azo, thio, decano, hydroxy, 丞 carbonyl, carboxy, nitro, alkyl , cycloalkyl, aryl or benzoinyl, may be the same or different. Further, X- is a gas ion, a bromine 200930839 ion, a striking ion, an acetate ion or a carbonate ion) β. By using a polymer having a repeating unit represented by the above formula αν), the rate of nickel engraving can be increased (below The ratio (called "ER1") to the etching rate of copper (hereinafter referred to as "ER2") (ER1 / ER2). Thereby, it is possible to surely etch only nickel from the material to be treated in which nickel and copper coexist. Examples of the polymer include a decylamine/epoxy-propylene oxide condensation polymer, a dimethylamine/ammonia/epoxy-propylene oxide condensation polymer, and adipic acid/dimethylamine/epoxypropane/diethylenetriamine condensation. Polymers, etc. Further, when ammonia is used as the monomer, R6 and R7 in the repeating unit represented by the above formula (JV) are fluorenyl groups. Further, when diamine is used as the monomer, both Re and r7 in the repeating unit represented by the above formula (IV) are a mercapto group. The polymer having a repeating unit represented by the above formula (Π) may, for example, be a condensation polymer which is not used as a monomer of diacrylamide, and the kind thereof is not particularly limited, and for example, it can be used from a commercially available surfactant. Appropriate choice. Specific examples thereof include a condensation polymerization Q compound composed of diacrylamide hydrochloride, a diacrylamide/acrylic acid/acrylamide polymer, and the like. Further, when diacrylamide is used as a monomer, the imaginary gas in the repeating unit represented by the above formula (11). The polymer having a repeating unit represented by the above formula (dish) may, for example, be a condensation polymer using dicyandiamide as a monomer, and the kind thereof is not particularly limited, and for example, a commercially available surfactant can be used. Choose the appropriate one. Specific examples include a diazodiamine/methylene condensation polymer and a di-amylamine/diethylenetriamine condensation polymer H when dicyandiamide is used as a monomer, as shown by the above formula (nr). It is known that R2 to Rs in the repeating unit are all hydrogen. 11 200930839 The concentration of the above polymer in the etching solution of the present invention is preferably 0.0001% by weight to 3% by weight, more preferably 0.0005% by weight to 1.5% by weight, most preferably 0.001% by weight to 1% by weight. /〇. As long as it is within the above range, corrosion of metal other than nickel can be suppressed to the extent that the etching of nickel is not hindered. ❹ Ο The ratio of the repeating unit of at least one selected from the above formula (I), the above formula (π), and the above formula (m) among the above repeating units is preferably 1 〇. ~100% by mole. The reason for this is that the erosion of metals other than nickel can be more effectively suppressed. Further, the above ratio (mole fraction) can be obtained by, for example, infrared ray analysis (IR), elemental analysis, liquid chromatography, or the like, in the above formula (1), the above formula (8), and the above formula (m). The relationship between these values and the number average molecular weight is calculated by including the molar number of the s month b basis or the characteristic element. In addition, when the monomer composition is undetermined, the monomer ratio is the molar fraction. Further, the denominator at the time when the ash is at the above-mentioned molar fraction is the total number of moles of the smallest repeating unit contained in the above polymer. The above polymer ' preferably has a weight average molecular weight of from 100 to 1,000,000, more preferably from 100 to 5,000,000. As long as it is within the above range, it is possible to suppress the invasion of metal other than the recording without hindering the degree of recording (4). In the etching liquid of the present invention, in addition to the upper component, the effect of the present invention can be added to the extent that it does not hinder the effect of the present month. For example, as a female mites for ruthenium peroxide, phenols such as phenols may be added. The concentration of benzenesulfonic acid or the like of sulfonic acid or salicylic acid is, for example, 0.01 to 5% by weight left, in order to promote the invasion of copper. As a source of chloride ions, for example, a fruit can also be added with a gas ion to give hydrochloric acid, or an aniline hydrochloride, a hydrochloride salt such as 12 200930839 pulmonate hydrochloride or ethylamine hydrochloride, or a gasification and gasification. , vaporized zinc chloride, gasified iron, vaporized copper, vaporized nickel, etc. The concentration of these gas ion sources is usually about ~6〇 plus or so in terms of gas ions. The etching solution can be easily prepared by dissolving the above components in water. As the water, the water having the ionic substance or the impurity removed is preferable, and for example, ion-exchanged water, pure water, ultrapure water or the like is preferable. The above etching liquid can be blended to a predetermined concentration at the time of use, or the concentrated liquid can be prepared in advance and diluted before use. The method of using the etching liquid and (4) the temperature of the liquid of the (four) liquid is not particularly limited, but since it is necessary to suppress the corrosion of the metal other than nickel, it is preferable to etch the nickel more quickly. [Examples] Next, the examples of the etching liquid of the present invention will be described together with the comparative examples. Further, the explanation of the present invention is not limited to the following examples. The types shown in Table 1 (A to J) The polymer 'is prepared in each of the etching liquids which are not composed of Table 2, and each item is evaluated by the measurement method shown below. For each etching liquid, first, the acid and hydrogen peroxide are dissolved in the ion exchange. After the water was added, a polymer was added to prepare the acid. For the acid to be mixed, only sulfuric acid was used in Example 14, and the other was nitric acid. In addition, the weight average molecular weight shown in Table , was low molecular weight (weight average molecular weight: 5 〇 or more) In the case of 50,000 50,000, the vapor pressure type molecule 1 measuring device manufactured by G〇n〇tec Co., Ltd. was used, and the measurement was carried out under the conditions of a sample concentration of 5 wt% (solvent: toluene). In the case of an average molecular weight of 50,000 or more and 300,000 or less, the measurement was carried out under the same conditions as above using a thin-twist molecular weight measuring apparatus manufactured by Tosoh Corporation. <etching speed with respect to nickel (ER1)> thickness 1 mm The rolled nickel plate (manufactured by High Purity Chemical Laboratory) was cut out, and a test piece to which a protective tape was attached was prepared on one side. Then, each of the etching liquids shown in Table 2 (liquid amount: 1 mL each) was respectively The beaker was poured into the beaker, and the test piece was immersed in each etching liquid (25t) using a tweezers, and the test piece was shaken horizontally in the etching liquid (period: 2 seconds), and φ-minute etching treatment was performed. ER1 (pm/min) was calculated from the weight of each test piece before and after the treatment. ER1 (μιη/mhO = (weight before treatment (g) - weight after treatment (g) + area of test piece (m2) + Nickel density (g / (10) 3) + impregnation time (min) < etch rate with respect to steel (ER2) > Copper foil of 35 μm thickness (GTMP manufactured by Furukawa Copper Co., Ltd.) cut 4 cm square side Prepare a test with protective tape Then, each of the money engraving liquids (liquid amount: 1 mL) shown in Table 2 was separately injected into a beaker, and the test piece was immersed in each etching liquid (25 〇) using tweezers while allowing the test. The sheet was shaken in the horizontal direction in the etching solution (period: 2 seconds), and etching treatment was performed for one minute. Then, ER2 (μιη / min) was calculated from the weight of each test piece before and after the treatment by the following formula. ER2 ( μιη / min )=(weight before treatment (g)—weight after treatment (g) + area of test piece (m2) + density of nickel (g / cm3) + impregnation time (min) and 'for each etching solution, Calculate the ratio between the above ER1 and ER2 200930839 (ERl / ER2). Table 2 shows the ratios (ER1 / ER2) of ER1, ER2, and the like of the respective etching liquids. [Table 1] Typed trial #No. CASNo. Weight average molecular weight monomer composition (Mohr ratio) A - - 100,000 to 120,000 adipic acid / dimethylamine / epoxide / diethylene triamine condensation Polymer (1/1/1/1) B 7-(1518) - 280,000 dimethylamine / ammonia / epoxide (1/1/2) C - 26063-69-4 110,000 propylene amine hydrochloride Salt D 7-(21) - 20,000 to 3 million dicyandiamide / diethylene triamine condensation polymer (1/1) E 6-(1898) - 420,000 propylene acrylate / acrylic acid / acrylamide 1/1/1) F 6-(1429) - 40,000 to 80,000 dimethylamine ethyl methacrylate quaternary compound G 6-(1675) 30551-89-4 6 million gasified dipropylene dimethyl bond Η 7-(741) 9002-98-6 68130-97-2 70,000 Ethyleneimine I 7-(741) 106899-94-9 300 Ethyleneimine J 7-(24) - 10,000 to 30,000 Dimethylamine/epoxypropane (1/1) *Regulations related to the examination and manufacture of chemical substances 15 200930839 [Table 2]

聚合物的種類 各成分的濃度 (重量%) 蝕刻速度 (μιη/min) 钱刻速度比 ER1/ER2 酸 過氧化氫 聚合物 ER1 ER2 實施例1 A 20 2.8 0.005 3.94 0.03 131.33 實施例2 B 20 2.8 0.005 4.86 0.04 121.50 實施例3 C 20 2.8 0.0025 6.78 0.07 96.86 實施例4 D 20 2.8 0.005 6.61 0.09 73.44 實施例5 D 20 2.8 0.01 5.51 0.06 91.83 實施例6 E 20 2.8 0.002 5.50 0.10 55.00 實施例7 D 2 7 0.005 1.23 0.02 61.50 實施例8 D 37 2 0.005 1.84 0.04 46.00 實施例9 A 20 0.05 0.0005 4.39 0.04 109.75 實施例10 A 20 7 0.005 9.02 0.04 225.50 實施例11 B 20 10 0.005 9.36 0.06 156.00 實施例12 C 20 14 0.005 11.69 0.22 53.14 實施例13 E 37 14 0.2 17.20 0.44 39.09 實施例14 B 30 7 0.05 1.05 0.01 105.00 實施例15 J 20 2.8 0.005 5.23 0.05 104.60 比較例1 F 20 2.8 0.05 5.59 1.59 3.52 比較例2 G 20 2.8 0.001 4.18 2.14 1.95 比較例3 H 20 2.8 0.003 5.50 0.65 8.46 比較例4 I 20 2.8 0.01 5.54 0.57 9.72 比較例5 不使用 20 2.8 - 6.41 3.30 1.94 16 200930839 如表2所示’根據本發明的實施例1〜丨5,與比較例1 5相較之下,其中任一實施例皆可以增大蝕刻速度比(ER1 / ER2 ^ , 。從此結果得知,根據本發明,可以從鎳與其他的 金屬(銅等)共存之被處理材當中選擇性地只就錄 刻。 【圖式簡單說明】 無Polymer type Concentration of each component (% by weight) Etching rate (μιη/min) Charging speed ratio ER1/ER2 Acid hydrogen peroxide polymer ER1 ER2 Example 1 A 20 2.8 0.005 3.94 0.03 131.33 Example 2 B 20 2.8 0.005 4.86 0.04 121.50 Example 3 C 20 2.8 0.0025 6.78 0.07 96.86 Example 4 D 20 2.8 0.005 6.61 0.09 73.44 Example 5 D 20 2.8 0.01 5.51 0.06 91.83 Example 6 E 20 2.8 0.002 5.50 0.10 55.00 Example 7 D 2 7 0.005 1.23 0.02 61.50 Example 8 D 37 2 0.005 1.84 0.04 46.00 Example 9 A 20 0.05 0.0005 4.39 0.04 109.75 Example 10 A 20 7 0.005 9.02 0.04 225.50 Example 11 B 20 10 0.005 9.36 0.06 156.00 Example 12 C 20 14 0.005 11.69 0.22 53.14 Example 13 E 37 14 0.2 17.20 0.44 39.09 Example 14 B 30 7 0.05 1.05 0.01 105.00 Example 15 J 20 2.8 0.005 5.23 0.05 104.60 Comparative Example 1 F 20 2.8 0.05 5.59 1.59 3.52 Comparative Example 2 G 20 2.8 0.001 4.18 2.14 1.95 Comparative Example 3 H 20 2.8 0.003 5.50 0.65 8.46 Comparative Example 4 I 20 2.8 0.01 5.54 0.57 9.72 Comparative Example 5 Not used 20 2.8 - 6.41 3.30 1.94 16 20 0930839 As shown in Table 2, in accordance with Embodiments 1 to 5 of the present invention, in comparison with Comparative Example 15, any of the embodiments can increase the etching rate ratio (ER1 / ER2 ^ , . It is understood that, according to the present invention, it is possible to selectively record only from among the materials to be treated in which nickel and other metals (copper, etc.) coexist. [Simple description of the drawing]

【主要元件符號說明】 無[Main component symbol description] None

1717

Claims (1)

200930839 十、申請專利範圍: 1.種餘刻液,其特徵在於:於含有硝酸或硫酸、以及 過氧化氫、以及水之鎳蝕刻液當中,含有具有選自從下述 式(I)、下述式(Π)及下述式(羾)中之至少1種重複單位的聚 合物; -ch2~ch-ch 2 OH a) ❹ 2 —CH2—CH 一CH一CH o h2c CH 2 (II) NI Ri H NI c 3 ΠΝ—R C = N =2:丨R4 N— (其中’ Ri〜尺5為氫、胺基、亞胺基、氰基、偶氮基、 硫基、磺酸基'羥基、羰基、羧基、硝基、烷基、環烷基、 芳香基或苯甲基’可為相同或相異’又,該重複單位内所 包含之胺亦可為第四級錄鹽的形態)。 2·如申請專利範圍第1項之蝕刻液,其令作為具有上述 式(I)之重複單位之聚合物,係含有具有下述式(IV)所示 18 200930839 重複單位的聚合物; 〒7 X- -N+-CH2-CH-CH2-…(IV) Re oh (其中’r6&R7為氫、胺基、亞胺基、氰基、偶氮基、 硫基、續酸基、麵基、羰基、羧基、頌基、烧基、環烧基、 ❹ 芳香基或苯甲基,可為相同或相異;又,X-為氯離子、溴 離子、碘離子、乙酸離子或碳酸離子)。 3. 如申請專利範圍第1項之蝕刻液,其中該聚合物的含 量為〇.0001重量%以上3重量%未滿。 4. 如申請專利範圍第1項之蝕刻液,其中該聚合物全部 的重複單位中,選自從上述式(I)、上述式(π)及上述式(m) 之至少1種重複單位所占的比例為1 〇〜1 〇〇莫耳%。 5. 如申请專利範圍第1項之蝕刻液,其中該聚合物之重 〇 量平均分子量為100〜100萬。 /.如申請專利範圍帛1項之餘刻液’其中該硝酸或硫酸 又為I.0重量%〜38.5重量◦/❶,且過氧化氫的濃度為 00175重量%〜175重量%。 十一、圏式: 無 19200930839 X. Patent application scope: 1. A residual engraving liquid characterized in that: in a nickel etching solution containing nitric acid or sulfuric acid, hydrogen peroxide, and water, the composition has a selected from the following formula (I), the following a polymer of at least one repeating unit of the formula (Π) and the following formula (羾); -ch2~ch-ch 2 OH a) ❹ 2 —CH 2 —CH —CH—CH o h2c CH 2 (II) NI Ri H NI c 3 ΠΝ—RC = N = 2: 丨R4 N— (where 'Ri~5 is hydrogen, amine, imido, cyano, azo, thio, sulfonate' hydroxy, The carbonyl group, the carboxyl group, the nitro group, the alkyl group, the cycloalkyl group, the aryl group or the benzyl group 'may be the same or different', and the amine contained in the repeating unit may also be in the form of the fourth-order salt. 2. The etching solution according to claim 1, wherein the polymer having the repeating unit of the above formula (I) contains a polymer having a repeating unit of 18 200930839 represented by the following formula (IV); X- -N+-CH2-CH-CH2-...(IV) Re oh (where 'r6& R7 is hydrogen, amine, imido, cyano, azo, thio, benzoic acid, surface group, The carbonyl group, the carboxyl group, the fluorenyl group, the alkyl group, the cycloalkyl group, the oxime group or the benzyl group may be the same or different; further, X- is a chloride ion, a bromide ion, an iodide ion, an acetate ion or a carbonate ion). 3. The etching solution according to claim 1, wherein the polymer is contained in an amount of 0.001% by weight or more and 3% by weight or less. 4. The etching solution according to claim 1, wherein all of the repeating units of the polymer are selected from at least one repeating unit of the above formula (I), the formula (π), and the formula (m); The ratio is 1 〇~1 〇〇mol%. 5. The etching solution according to claim 1, wherein the polymer has a weight average molecular weight of 100 to 1,000,000. The remnant of claim 1 is wherein the nitric acid or sulfuric acid is again I.0% by weight to 38.5 parts by weight/❶, and the concentration of hydrogen peroxide is 00175% by weight to 1755% by weight. XI. 圏: No 19
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