JP2006339509A - Composition for etching metal titanium and etching method using it - Google Patents
Composition for etching metal titanium and etching method using it Download PDFInfo
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本発明は金属チタンエッチング用組成物及びそれを用いたエッチング方法に関する。 The present invention relates to a metal titanium etching composition and an etching method using the same.
金属チタンは半導体、ＬＣＤモジュールに使用されている重要な金属である。一般に半導体製造では、各種材料を成膜した後、フォトレジストなどを塗布、露光、現像し、その後、エッチングで不要な部分を削り、パターンを形成する。従来、金属チタンのエッチングには弗硝酸系のエッチング液を使用することが多かったが、弗硝酸系のエッチング液を使用すると、チタンの下地膜として多用されているアルミニウム、二酸化ケイ素にも弗硝酸系のエッチング液が作用し、これらのダメージが大きく、選択性良く金属チタンをエッチングすることができなかった。 Titanium metal is an important metal used in semiconductors and LCD modules. In general, in semiconductor manufacturing, after depositing various materials, a photoresist or the like is applied, exposed, and developed, and then unnecessary portions are etched away to form a pattern. Conventionally, a nitric acid-based etchant is often used for etching titanium metal. However, if a fluoric acid-based etchant is used, fluoric acid is also used for aluminum and silicon dioxide, which are often used as titanium underlayers. The etching liquid of the system acted, and these damages were great, and metal titanium could not be etched with good selectivity.
これを改良する方法として、過酸化水素とアンモニアからなるエッチング液が開示されている（特許文献１参照）。しかし、この方法においてもアルミニウムに対するダメージを工業的に満足できるレベルまで減らすことはできなかった。また金属チタンのエッチング速度を上げるために、加温状態で使用するとアルミニウムへのダメージが許容範囲を超えるという問題があった。 As a method for improving this, an etching solution comprising hydrogen peroxide and ammonia is disclosed (see Patent Document 1). However, even with this method, damage to aluminum could not be reduced to a level that is industrially satisfactory. Further, there is a problem that damage to aluminum exceeds an allowable range when it is used in a heated state in order to increase the etching rate of titanium metal.
そこで、アルミニウム又はアルミニウム合金等にダメージを与えることなく、金属チタンをエッチングできるエッチング用組成物の開発が望まれていた。 Therefore, it has been desired to develop an etching composition that can etch metallic titanium without damaging aluminum or an aluminum alloy.
一方、我々はこれまで炭酸及び／又は炭酸塩、並びに過酸化水素及び水を含んでなるエッチング用組成物が酸化チタンの除去に効果的であることを報告している。（特許文献２参照）しかし、金属チタンのエッチングについては報告していなかった。 On the other hand, we have reported that an etching composition comprising carbonic acid and / or carbonate, hydrogen peroxide and water is effective in removing titanium oxide. However, no etching of metallic titanium has been reported.
上述したように、アルミニウム又はアルミニウム合金にダメージを与えることなく、金属チタンをエッチングできるエッチング用組成物の開発が望まれていた。そのため本発明の目的は、アルミニウム又はアルミニウム合金にダメージを与えることなく、金属チタンをエッチングできるエッチング用組成物及びそれを用いたエッチング方法を提供することにある。 As described above, it has been desired to develop an etching composition capable of etching metal titanium without damaging aluminum or an aluminum alloy. Therefore, an object of the present invention is to provide an etching composition capable of etching titanium metal without damaging aluminum or an aluminum alloy, and an etching method using the same.
本発明者らは金属チタンのエッチング用組成物について鋭意検討した結果、炭酸及び／又は炭酸塩、並びに過酸化水素及び水を含んでなるエッチング用組成物を使用することにより、金属チタンを容易にエッチングでき、しかもアルミニウム及びアルミニウム合金にダメージを与えないことを見出し、本発明を完成させるに至った。 As a result of intensive studies on the etching composition for metallic titanium, the inventors of the present invention easily made metallic titanium by using an etching composition comprising carbonic acid and / or carbonate, and hydrogen peroxide and water. It has been found that etching can be performed and that aluminum and aluminum alloy are not damaged, and the present invention has been completed.
すなわち本発明は、炭酸及び／又は炭酸塩、並びに過酸化水素及び水を含んでなる金属チタンエッチング用組成物及びそれを用いたエッチング方法である。 That is, the present invention is a metal titanium etching composition comprising carbonic acid and / or carbonate, hydrogen peroxide and water, and an etching method using the same.
以下に本発明をさらに詳細に説明する。 The present invention is described in further detail below.
本発明の金属チタンのエッチング用組成物は、炭酸及び／又は炭酸塩、並びに過酸化水素及び水を含んでなるものである。 The titanium titanium etching composition of the present invention comprises carbonic acid and / or carbonate, hydrogen peroxide and water.
本発明のエッチング用組成物において、炭酸とは、二酸化炭素水溶液をいい、炭酸塩とはＨ２ＣＯ３の塩であり、正塩、酸性塩（炭酸水素塩）、塩基性塩がある。炭酸塩は金属酸化物又は水酸化物とニ酸化炭素とを水の存在で作用させて得ることができる。本発明のエッチング用組成物で使用する炭酸塩は水に可溶なものが好ましい。水に可溶な炭酸塩を例示すると、炭酸アンモニウム塩、炭酸アルカリ金属塩、炭酸テルル塩等が挙げられる。しかし、金属イオンの存在を嫌う用途（例えば半導体製造）においては、炭酸アンモニウム塩が特に好ましい。本発明において炭酸アンモニウム塩とは、アンモニアと炭酸の塩、アミンと炭酸の塩、第四級アンモニウムの炭酸塩を示す。炭酸アンモニウムは、通常、炭酸アンモニウム、炭酸水素アンモニウム、カルバミン酸アンモニウムの混合物として流通しており、これらの混合物を使用してもよい。また炭酸アンモニウム水溶液は、７０℃で炭酸とアンモニアに分解することが知られているが、炭酸とアンモニアに分解した状態で使用してもよい。 In the etching composition of the present invention, carbonic acid refers to an aqueous solution of carbon dioxide, and carbonate refers to a salt of H 2 CO 3 , which includes a normal salt, an acidic salt (bicarbonate), and a basic salt. The carbonate can be obtained by allowing a metal oxide or hydroxide and carbon dioxide to act in the presence of water. The carbonate used in the etching composition of the present invention is preferably soluble in water. Examples of carbonates that are soluble in water include ammonium carbonates, alkali metal carbonates, tellurium carbonates, and the like. However, ammonium carbonate salts are particularly preferred for applications that dislike the presence of metal ions (eg, semiconductor manufacturing). In the present invention, ammonium carbonate refers to a salt of ammonia and carbonic acid, a salt of amine and carbonic acid, and a carbonate of quaternary ammonium. Ammonium carbonate is usually distributed as a mixture of ammonium carbonate, ammonium hydrogen carbonate, and ammonium carbamate, and these mixtures may be used. Further, it is known that an aqueous ammonium carbonate solution decomposes into carbonic acid and ammonia at 70 ° C., but it may be used in a state of being decomposed into carbonic acid and ammonia.
本発明のエッチング用組成物において、使用する過酸化水素に制限はなく、過酸化水素単独で使用しても良いし、過酸化水素水などの溶液なども使用できる。 In the etching composition of the present invention, the hydrogen peroxide used is not limited, and hydrogen peroxide alone may be used, or a solution such as hydrogen peroxide solution may be used.
本発明のエッチング用組成物において、使用する水の形態にも制限はない。水単独で使用しても良いし、他の有機溶媒などとの混合液、塩、酸、塩基などを加えた水溶液としても使用できる。 In the etching composition of the present invention, the form of water used is not limited. Water may be used alone, or it may be used as a mixed solution with other organic solvents, or an aqueous solution to which a salt, acid, base, or the like is added.
本発明のエッチング用組成物において、炭酸及び／又は炭酸塩、過酸化水素、水の含有量は、用途、使用条件、炭酸塩の種類により変動するため限定されないが、例えば、金属チタンのエッチング用組成物の総重量を基準に炭酸及び／又は炭酸塩の含量が０．０１〜４０重量％、過酸化水素の含量が１０ｐｐｍ〜３５重量％、水の含量が２５〜９９．９重量％が好ましく、炭酸及び／又は炭酸塩の含量が０．１〜３０重量％、過酸化水素の含量が１００ｐｐｍ〜３１重量％、水の含量が３９〜９９．９重量％がさらに好ましい。炭酸及び／又は炭酸が０．０１重量％未満であると、金属チタンのエッチングが実用的でないほど遅く、４０重量％を越えると炭酸及び／又は炭酸が水溶液に溶解し難くなり、実用的ではない。過酸化水素については、１０ｐｐｍ未満であると金属チタンのエッチングが実用的でないほど遅く、３５重量％を越える過酸化水素は危険性が高く、一般に市場に流通していないため工業的ではない。水については、２５重量％未満だと、炭酸及び／又は炭酸が水溶液に溶解し難くなり、９９．９重量％を超えると金属チタンのエッチングが実用的でないほど遅くなる。 In the etching composition of the present invention, the content of carbonic acid and / or carbonate, hydrogen peroxide, and water is not limited because it varies depending on the application, use conditions, and type of carbonate. For example, for etching titanium metal Preferably, the carbonic acid and / or carbonate content is 0.01 to 40% by weight, the hydrogen peroxide content is 10 ppm to 35% by weight, and the water content is 25 to 99.9% by weight, based on the total weight of the composition. More preferably, the content of carbonic acid and / or carbonate is 0.1 to 30% by weight, the content of hydrogen peroxide is 100 ppm to 31% by weight, and the content of water is 39 to 99.9% by weight. When carbonic acid and / or carbonic acid is less than 0.01% by weight, etching of titanium metal is so slow that it is not practical, and when it exceeds 40% by weight, carbonic acid and / or carbonic acid is difficult to dissolve in an aqueous solution, which is not practical. . As for hydrogen peroxide, if it is less than 10 ppm, the etching of titanium metal is so slow that it is impractical, and hydrogen peroxide exceeding 35% by weight is highly dangerous and is not industrial because it is generally not on the market. When the amount of water is less than 25% by weight, carbonic acid and / or carbonic acid hardly dissolves in the aqueous solution, and when the amount exceeds 99.9% by weight, the etching of titanium metal is slow enough to be impractical.
本発明のエッチング用組成物には、更にノニオン系、カチオン系又はアニオン系の界面活性剤を添加することもできる。これらの界面活性剤は一般に流通しているものなら問題なく使用できるが、金属成分を嫌う半導体製造用にはアルカリ金属を含まないものが好ましい。界面活性剤を本発明の組成物に添加することで、微細なパターン内部までエッチング用組成物が侵入し、より均一なエッチングが可能となる。 A nonionic, cationic or anionic surfactant can also be added to the etching composition of the present invention. These surfactants can be used without problems as long as they are generally available, but those not containing an alkali metal are preferred for semiconductor production that dislikes metal components. By adding the surfactant to the composition of the present invention, the etching composition penetrates into the fine pattern, thereby enabling more uniform etching.
また、本発明のエッチング用組成物には、更にポリカルボン酸、アミノポリカルボン酸、ポリホスホン酸、又はアミノポリホスホン酸から成る群より選ばれる少なくとも一種のキレート剤を添加しても良い。これらのキレート剤も一般に使用されるものなら問題なく使用できるが、金属成分を嫌う半導体製造用にはアルカリ金属を含まないものが好ましい。これらのキレート剤を本発明のエッチング用組成物に添加することで、アルミニウム、金属チタンなどの金属イオンの再付着を抑制できる。 The etching composition of the present invention may further contain at least one chelating agent selected from the group consisting of polycarboxylic acid, aminopolycarboxylic acid, polyphosphonic acid, or aminopolyphosphonic acid. These chelating agents can also be used without problems if they are generally used, but those containing no alkali metal are preferred for the production of semiconductors that dislike metal components. By adding these chelating agents to the etching composition of the present invention, reattachment of metal ions such as aluminum and metal titanium can be suppressed.
本発明のエッチング用組成物を使用して金属チタンをエッチングする温度は０〜１００℃であり、好ましくは１０〜９０℃である。０℃未満では、金属チタンのエッチング速度が現実的でないほど遅く、１００℃を越える温度では炭酸が水に溶解せず、金属チタンのエッチング性能が低下する。 The temperature for etching metal titanium using the etching composition of the present invention is 0 to 100 ° C, preferably 10 to 90 ° C. If it is less than 0 ° C., the etching rate of metallic titanium is unrealistically low, and if it exceeds 100 ° C., carbonic acid does not dissolve in water, and the etching performance of metallic titanium is lowered.
本発明のエッチング用組成物は、金属チタンをエッチング処理する様々な分野で使用できる。例えば、金属チタンの表面処理、半導体製造工程又はＬＣＤモジュール製造工程のパターン形成、不純物の除去などが挙げられる。半導体製造工程又はＬＣＤモジュール製造工程において、本発明のエッチング用組成物を使用し、成膜した金属チタンをエッチングすることができる。またエッチング残渣としての金属チタンの除去にも有効である。 The etching composition of the present invention can be used in various fields for etching titanium metal. For example, surface treatment of titanium metal, pattern formation in a semiconductor manufacturing process or LCD module manufacturing process, removal of impurities, and the like can be mentioned. In the semiconductor manufacturing process or the LCD module manufacturing process, the formed titanium metal film can be etched using the etching composition of the present invention. It is also effective for removing metallic titanium as an etching residue.
本発明の金属チタンエッチング用組成物及びそれを用いたエッチング方法は、アルミニウム又はアルミニウム合金にダメージを与えることなく、金属チタンをエッチングするエッチング用組成物及びエッチング方法を提供するものである。 The composition for etching metal titanium and the etching method using the same according to the present invention provide an etching composition and etching method for etching metal titanium without damaging aluminum or an aluminum alloy.
本発明を以下の実施例により更に詳細に説明するが、本発明はこれらに限定されるものではない。なお表記を簡潔にするため、以下の略記号を使用した。
ＡＣ：炭酸アンモニウム
ＡＨＣ：炭酸水素アンモニウム
ＨＰＯ：過酸化水素
ＮＨ３：アンモニア
実施例１〜１２
チタン金属箔（１０ｍｍ角）を表１に示すエッチング用組成物３０ｇに６０分間浸漬し、水洗、乾燥の後、重量法によりエッチング速度を求めた。また、ＡｌＣｕウエハ（１５ｍｍ角、膜厚５０００オングストローム、アドバンテック製）も同様にエッチング用組成物に１０分間浸漬し、シート抵抗値よりＡｌＣｕエッチング速度を算出した。それぞれのエッチング速度を表１に示した。なお、シート抵抗器はＭＣＰ−Ｔ６００（三菱化学製）を使用した。
The present invention will be described in more detail with reference to the following examples, but the present invention is not limited thereto. In order to simplify the notation, the following abbreviations were used.
AC: ammonium carbonate AHC: ammonium hydrogen carbonate HPO: hydrogen peroxide NH 3 : ammonia Examples 1 to 12
A titanium metal foil (10 mm square) was immersed in 30 g of the etching composition shown in Table 1 for 60 minutes, washed with water and dried, and then the etching rate was determined by a weight method. Similarly, an AlCu wafer (15 mm square, film thickness 5000 angstrom, manufactured by Advantech) was similarly immersed in the etching composition for 10 minutes, and the AlCu etching rate was calculated from the sheet resistance value. The respective etching rates are shown in Table 1. In addition, MCP-T600 (made by Mitsubishi Chemical) was used for the sheet resistor.
本発明のエッチング用組成物では、ＡｌＣｕのエッチング速度が小さく、金属Ｔｉを選択的にエッチングできた。
比較例１
炭酸水素アンモニウムのかわりに当量のアンモニアを含有するエッチング用組成物を調製し、実施例と同様の方法でＴｉ及びＡｌＣｕのエッチング速度を測定した。結果を表１に示す。
In the etching composition of the present invention, the etching rate of AlCu was small, and metal Ti could be selectively etched.
Comparative Example 1
An etching composition containing an equivalent amount of ammonia instead of ammonium hydrogen carbonate was prepared, and etching rates of Ti and AlCu were measured in the same manner as in the examples. The results are shown in Table 1.
Ｔｉのエッチング速度は大きかったが、同様にＡｌＣｕも大きくエッチングされ、金属Ｔｉを選択的にエッチングすることはできなかった。 Although the etching rate of Ti was high, similarly, AlCu was also greatly etched, and the metal Ti could not be selectively etched.
Claims (8)
A method for etching metal titanium in a manufacturing process of a semiconductor or LCD module of aluminum or aluminum alloy wiring using the titanium etching composition according to claim 1.
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| WO2015054460A1 (en) * | 2013-10-11 | 2015-04-16 | E. I. Du Pont De Nemours And Company | Removal composition for selectively removing hard mask |
| CN105612599A (en) * | 2013-10-11 | 2016-05-25 | E.I.内穆尔杜邦公司 | Removal composition for selectively removing hard mask |
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| JPS6193629A (en) * | 1984-10-15 | 1986-05-12 | Nec Corp | Manufacture of semiconductor device |
| JPH08124934A (en) * | 1994-10-19 | 1996-05-17 | Sony Corp | Patterning method for titanium film |
| JP2002155382A (en) * | 2000-09-05 | 2002-05-31 | Wako Pure Chem Ind Ltd | Etchant for ti-base film and etching method |
| JP2004071585A (en) * | 2002-02-15 | 2004-03-04 | Tosoh Corp | Composition for dissolving titanium oxide and dissolving method using same |
| JP2006245288A (en) * | 2005-03-03 | 2006-09-14 | Casio Micronics Co Ltd | Method for forming bump and semiconductor device |
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| WO2015054460A1 (en) * | 2013-10-11 | 2015-04-16 | E. I. Du Pont De Nemours And Company | Removal composition for selectively removing hard mask |
| WO2015054464A1 (en) * | 2013-10-11 | 2015-04-16 | E. I. Du Pont De Nemours And Company | Removal composition for selectively removing hard mask and methods thereof |
| CN105612599A (en) * | 2013-10-11 | 2016-05-25 | E.I.内穆尔杜邦公司 | Removal composition for selectively removing hard mask |
| CN105874562A (en) * | 2013-10-11 | 2016-08-17 | E.I.内穆尔杜邦公司 | Removal composition for selectively removing hard mask and methods thereof |
| US10005991B2 (en) | 2013-10-11 | 2018-06-26 | Ekc Technology Inc | Removal composition for selectively removing hard mask and methods thereof |
| US10155921B2 (en) | 2013-10-11 | 2018-12-18 | E I Dupont Ne Nemours And Company | Removal composition for selectively removing hard mask and methods thereof |
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