TW200930824A - Tubular sputter target with exterior surface of the carrier tube structured in a trench-type manner - Google Patents

Tubular sputter target with exterior surface of the carrier tube structured in a trench-type manner Download PDF

Info

Publication number
TW200930824A
TW200930824A TW97135813A TW97135813A TW200930824A TW 200930824 A TW200930824 A TW 200930824A TW 97135813 A TW97135813 A TW 97135813A TW 97135813 A TW97135813 A TW 97135813A TW 200930824 A TW200930824 A TW 200930824A
Authority
TW
Taiwan
Prior art keywords
carrier tube
sputter
target
tube
length
Prior art date
Application number
TW97135813A
Other languages
Chinese (zh)
Other versions
TWI398536B (en
Inventor
Peter Preibler
Martin Weigert
Markus Schultheis
Original Assignee
Heraeus Gmbh W C
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Gmbh W C filed Critical Heraeus Gmbh W C
Publication of TW200930824A publication Critical patent/TW200930824A/en
Application granted granted Critical
Publication of TWI398536B publication Critical patent/TWI398536B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention relates to a sputter target with a carrier tube and a sputter material arranged on its exterior jacket surface and consists in that annular or spiral circumferential indentations are ar-ranged on the exterior jacket surface of the carrier tube around the longitudinal axis of the carrier tube into which indentations the sputter material engages and that the indentations are distributed in the area of the sputter material over the length of the carrier tube.

Description

200930824 九、發明說明: 【發明所屬之技術領域】 本發明係關於具有一承載管及配置在其外殼表面上之一 濺鍍材料的一濺鍍靶材。此外,本發明係關於用於此類濺 鍍靶材之生産的製程方法。 【先前技術】 具有一承載管的濺鍍靶材,即所謂的管狀濺鍍靶材,在 今曰的薄層技術領域中獲得了日益增加的重要性。在文獻 中描述了多種設計的管狀濺鑛乾材。在多數情況下,已證 明對於實際上用於應用在一承載管之材料(即,濺鍍材料) 係有利的。這可藉由如在德國專利DE 41 15 663中的熱噴 塗製程、藉由如描述於德國專利DE 1〇〇 43 748中的直接逢 鑄在一承載管上、藉由焊接或膠合製程、藉由如揭示於歐 洲專利EP 1 518 006中夾緊製程、藉由直接壓合附接,例 如符合歐洲專利EP 500 031的熱等壓加壓或冷等壓加壓而 產生。 關於功能性的一決定性觀點是在濺鍍材料與承載管材料 之間的連接品質。一方面,必須保證一低歐姆電性接點, 另一方面,熱接觸由於在實際應用作為一濺鍍靶材的期 間,大量的熱量需經傳導遠離濺鍍材料而經由該承載管至 一冷卻介質,因此,需保證一優良的熱接觸。這樣優良的 熱接觸先前通常係藉由穩固地接合製程而產生,例如,藉 由在高溫下以具有該濺鍍材料之合金或是藉由濺鍍材料濕 潤該承載管的方式而完成將該濺鍍材料塗敷於該承載管 134398.doc 200930824 上。在多數情況下,此優良的接觸不能被精確地定義,例 如,在熱噴塗或熱等壓加磨的情況。在這些情況下擴散 製程或可能僅藉由接合賤鑛材料在承載管之表面粗链度可 能需為黏著性負責。 . m,該問題是在該承載管與該濺鑛材料<間的優好 . 連接對於高性錢㈣必要的,但同時在㈣鑛材料與 卜表面鄰近合金之類型的)該承載管之間一過度強的連接 e 也是不希望的,因爲舉例而言該賤鑛材料的污染可能因此 產生。若是使用了具有實質上不同的熱膨服係數之材料, 則連接賤鑛材料與承載管之材料的技術會變得尤其關鍵。 在此情況下,存在有危險(特別係在一相對薄弱之連接的 情況下),即該濺鍍電漿産生這樣的熱應力,使橫向張力 的情況由於連接區域可能被破壞且因Λ更加減弱❿發生在 該減鍍材料與該承載管之間的連接之區域中。 【發明内容】 φ 本發明之該目的係提供一管狀濺鍍靶材,其大幅解決了 如上所述之實現該承載管與該濺鍍材料之間的一良好熱接 觸的問題。 依據本發明,此目的係藉由特徵請求項之獨特特徵而達 到。有利的實施例係描述於次請求項中。 由於環狀或螺旋狀圓周缺口係配置於圍繞在該承載管之 縱軸的承載管外殼表面上,而該濺鍍材料接合進入該等缺 口’及該等缺Π係分布在該承載管之該長度上的該賤錄材 料之區域中,即,在藉由該濺鍍材料所覆蓋的該承載管之 134398.doc 200930824 表面上,不僅保證該濺鑛材料與該乾材管之間機械連接的 一相當大的强度(驚人地足夠),而且保證了該等兩種材料 之間-低歐姆電連接與必要的高導熱性。該賤錢材料接人 J在該承載管上應用的該等缺口中且在其中予以穩定地: 適當地’該等缺口具有一深度,其等於或大於粉末形式 4鍍材料之平均粒度的十倍。較佳地,該等缺口具有一 ❹ ❹ 至少為0.5 mm的深度。該等缺口可特別形成為凹槽。適當 地,該等缺口呈現出在-側或者在兩側的底切。該等缺口 可沿圓周不斷或間斷地予以形成,即,具有一有限的長 度,而較佳地均勻分布在該承載管之圓周上,例如,以間 斷的環狀或螺旋狀的形式。此外,這對於該等缺口被均勾 分布係有利的。 該等缺口也可具有一負形’即,以被機鍍材料圍繞之隆 起部的形式。其可因此從該承載管之外殼表面突出,以使 其(實際上)嵌入所應用的濺鍍材料中。其也可形成有底 切〇 _ 對於該承载管之長度至少如以一管狀方式配置的該賤鑛 材料之長度一樣長是有利的β 、根據本發明之該等賤鑛乾材可(例如)依據本發明而形 成、,藉由被熔化與濟鋒至承載管上㈣鑛材料,該賤錢材 料被涛鑄到該等缺σ中’或若使用粉末形式之-適當類型 =錢錢材料’粉末形式的該㈣材料也可㈣合在該承載 管上,該濺鍍材料被麼合到該等缺”,較佳地係藉由等 J34398.doc 200930824 壓加壓。 :二材料與載體的聯鎖迄今爲止僅從靶板(即,水平濺 中已知。世界專利W〇嶋5863 Α1在這方面描述了 材背板的-溝渠形式結構…減鍵材料的—第二板係 ^•於歡材月板上,以#該材料變形時形成該聯鎖。此變 形,擔了結構不均句性發生的風險,其可導致一非齊性減 =仃為。因爲明顯的原因’其不可能以此方式製造管狀的 0 j接。與管狀連接相比,板狀形式料接也有此好處,即 彼料接的兩種材料其不同的膨脹係數與因此而不同的膨 & v亍為可在該平面中相抵,某些事在管件的情況下係不可 能發生的。在這方面’其本身可預期的是在加熱由不同材 料:成的管狀濺鍍靶材,或該濺鍍材料上升,”其本身 因著相較於承載管之較大的膨脹而從該承載管中廣泛地分 離’或若其顯示了比該承載管更小的膨脹則該錢材料會 撕開」而,令人驚奇不已的是已發現該等缺口及/或隆 起部(更特別是其均勻地形成穿過該外殼表面的情況下)保 .丘該等兩種材料之間的一緊密連接而不允許在該錢鑛材料 中發生翹曲或裂縫。此外,濺鍍材料以相同方式具有與該 承載管相同的一均質結構,且該合併結構不受損壞,以使 在藉由濺鍍的濺鍍材料移除後該承載管的多樣化使用係可 月&的在藉由锻造進行附接的狀況下,由於在鍛造期間引 入該承載板中之破壞或是對於結構的損壞,這通常是不再 可能的。 依據本發明,濺錢材料是藉由一盡可能冷的等壓加壓製 134398.doc 200930824 程而塗敷於-承載管(金屬管件,例如,硬技術級鋁合金 或不銹鋼)上。該濺鍍材料最初可呈現為細粒狀粉末,其 可以(例如)由CuIn(Ga)粉末組成。此粉末具有如此低等級 的硬度’以使其可藉由甚至在室溫下壓合而予以焊接,使 . 得在理論密度之>98%的區域之材料密度可容易地實現。 該濺鍍材料係如此的密集,儘管高度密集的濺鍍材料本身 還疋不足夠的。對於濺鍍技術而言需保證該承載管之良好 ❹ 的熱接觸’且此外與該承載管的某-機械黏結性必須存 在,例如,爲了該賤鑛材料變熱及在該賤鑛材料與該承載 管之間發生熱應力的情況。 在具體項目中的解決方法可在於將一圓周螺紋槽切割成 該承載管之外壁’該螺紋槽顯示一底切,以使該濺鍍材料 在整個管件長度的麼實製程期間能夠壓實及壓緊於這些底 切t,且因此可能的機械應力被局部抵消,一方面,在承 載e的方向上從該濺鍍材料而來之熱傳導係明顯地改善 〇 了,另一方面,藉由應用該凹槽而增加整個表面。 下文中,本發明的具體實例將藉由圖示的方式予以說 明。 【實施方式】 圖1a顯示一承載管1 ’而濺鍍材料2(在該圖示中顯示為 一區段)係應用於承載管丨上。該聯鎖係藉由v形圓周缺口3 發生’此#缺口 3係沿著該承載管之圓肖而規則地斷開。 圖⑽貝示-類似配置,該等缺口 3,具有一鑛齒狀,且圖 .、肩不類似構造’該等缺口 3"以一梯形槽的形狀而形成, 134398.doc 200930824 而與圖lb相符的鑛 且因著梯形形狀而在兩側顯示出底切 齒形缺口 3|僅在一側顯示出底切。 雖然在圖la至lc中,漉贫姑粗9技_从 T濺鍍材科2係顯不為一區段且該承 載目' 1係顯示為一側視圖,圖2a $ h如-j· 固圃昶至以顯不相同的結構,該 減鑛材料2與該等缺口3、3丨 汉·ί 一者係顯不為該承載營1之 表面中的部分切口。 e 在圖2中,該等缺口 3、3,及3”的橫截面係可見的。 ❹200930824 IX. Description of the Invention: [Technical Field] The present invention relates to a sputtering target having a carrier tube and a sputtering material disposed on the surface of the outer casing. Furthermore, the present invention relates to a process for the production of such sputter targets. [Prior Art] A sputter target having a carrier tube, a so-called tubular sputter target, is gaining increasing importance in the field of thin layer technology. Various designs of tubular splashing dry materials are described in the literature. In most cases, it has proven to be advantageous for materials (i.e., sputter materials) that are actually used in a carrier tube. This can be done by a thermal spraying process as described in German Patent No. DE 41 15 663, by direct casting on a carrier tube as described in German Patent DE 〇〇 43 748, by welding or gluing, borrowing It is produced by a clamping process as disclosed in European Patent EP 1 518 006, by direct compression attachment, for example by hot isostatic pressing or cold isostatic pressing according to European Patent EP 500 031. A decisive point of view regarding functionality is the quality of the connection between the sputter material and the carrier material. On the one hand, a low-ohmic electrical contact must be ensured. On the other hand, during the actual application as a sputtering target, a large amount of heat needs to be conducted away from the sputtering material through the carrier tube to a cooling. The medium, therefore, needs to ensure an excellent thermal contact. Such excellent thermal contact was previously produced by a solid bonding process, for example, by sputtering the alloy with the sputter material at elevated temperatures or by wetting the carrier tube with a sputter material. The plating material is applied to the carrier tube 134398.doc 200930824. In most cases, this excellent contact cannot be precisely defined, for example, in the case of thermal spraying or hot isostatic grinding. In these cases, the diffusion process may or may not be solely responsible for the adhesion of the tantalum ore material on the surface of the carrier tube. m, the problem is between the carrier tube and the splashing material < excellent connection. For the high-money (four) necessary, but at the same time (four) ore material and the surface of the adjacent alloy type of the carrier tube An excessively strong connection e is also undesirable because, for example, contamination of the antimony ore material may result. The technique of joining the materials of the tantalum ore and the material of the carrier tube becomes especially critical if materials having substantially different thermal expansion coefficients are used. In this case, there is a danger (especially in the case of a relatively weak connection), that is, the sputtering plasma generates such a thermal stress that the lateral tension may be destroyed due to the joint region and is further weakened by ❿ occurs in the region of the connection between the plating material and the carrier tube. SUMMARY OF THE INVENTION This object of the present invention is to provide a tubular sputter target that substantially solves the problem of achieving a good thermal contact between the carrier tube and the sputter material as described above. According to the invention, this object is achieved by the unique features of the feature request item. Advantageous embodiments are described in the sub-request. Since the annular or spiral circumferential notch is disposed on the surface of the carrier tube surrounding the longitudinal axis of the carrier tube, the sputter material is joined into the gaps and the defects are distributed in the carrier tube In the region of the recording material in the length, that is, on the surface of the carrying tube 134398.doc 200930824 covered by the sputtering material, not only the mechanical connection between the splashing material and the dry material tube is ensured. A considerable strength (surprisingly sufficient) and a guarantee between the two materials - low ohmic electrical connection and the necessary high thermal conductivity. The money material is received in the gaps applied to the carrier tube and stabilized therein: suitably [the gaps have a depth equal to or greater than ten times the average particle size of the powder form 4 plating material . Preferably, the indentations have a depth of at least 0.5 mm. The indentations can be formed in particular as grooves. Suitably, the indentations exhibit an undercut on the - side or on both sides. The indentations may be formed continuously or intermittently along the circumference, i.e., have a finite length, and are preferably evenly distributed over the circumference of the carrier tube, e.g., in the form of a discontinuous ring or spiral. Moreover, this is advantageous for the equalization of the gaps. The indentations may also have a negative shape 'i.e., in the form of a ridge surrounded by the machine material. It can thus protrude from the surface of the outer casing of the carrier tube so that it (actually) is embedded in the applied sputter material. It may also be formed with an undercut 〇 _ which is advantageous for the length of the carrier tube to be at least as long as the length of the bismuth mineral material arranged in a tubular manner, the dry slag material according to the invention may, for example, Formed according to the present invention, by being melted with Jifeng to the (4) mineral material on the carrying tube, the money material is cast into the missing σ 'or if the powder form is used - appropriate type = money material] The (4) material in powder form may also be (4) bonded to the carrier tube, and the sputtering material may be bonded to the defects, preferably by pressurization according to J34398.doc 200930824. Interlocking has so far only been known from target plates (ie, horizontal splashes. World Patent W〇嶋5863 Α1 describes the structure of the backing plate-ditch structure in this respect...the second plate system is reduced by On the moon board, the interlock is formed when the material is deformed. This deformation bears the risk of structural unevenness, which can lead to a non-homogeneous reduction = 仃 for the obvious reason It is possible to manufacture a tubular 0 j joint in this way. Compared with a tubular connection, a plate shape The material connection also has the advantage that the two materials which are connected to each other have different expansion coefficients and thus different expansions & v亍 can be offset in the plane, and some things are impossible in the case of the pipe fittings. In this respect, 'it is itself expected to heat the tubular sputter target made of different materials: or the sputter material rises," which itself is due to the larger expansion compared to the carrier tube. The carrier material is widely separated 'or if the material exhibits less expansion than the carrier tube, the money material will tear open." Surprisingly, such gaps and/or ridges have been found (more particularly It is uniformly formed through the surface of the outer casing. A tight connection between the two materials is not allowed to occur in the bituminous material. In addition, the sputtering material is in the same manner. Having the same homogeneous structure as the carrier tube, and the combined structure is not damaged, so that the diversified use of the carrier tube after being removed by the sputtered sputter material can be forged by forging In the case of attachment, due to It is generally no longer possible to introduce damage to the carrier during forging or damage to the structure. According to the invention, the splash material is coated by a cold pressing isostatic pressurization 134398.doc 200930824 Applied to a carrier tube (metal tube, for example, a hard-grade aluminum alloy or stainless steel). The sputtering material may initially be presented as a finely divided powder, which may, for example, be composed of CuIn(Ga) powder. Such a low grade of hardness 'so that it can be welded by pressing even at room temperature, so that the material density in the region of >98% of the theoretical density can be easily achieved. Dense, although the highly dense sputter material itself is not sufficient. For the sputtering technique, it is necessary to ensure a good thermal contact of the carrier tube' and in addition a certain mechanical bond with the carrier tube must exist, For example, in order to heat the tantalum ore material and cause thermal stress between the tantalum ore material and the carrier tube. The solution in a specific project may be to cut a circumferential thread groove into the outer wall of the carrier tube. The thread groove shows an undercut so that the sputtering material can be compacted and pressed during the entire length of the pipe length. Close to these undercuts t, and thus the possible mechanical stresses are partially offset, on the one hand, the heat conduction system from the sputtered material in the direction of carrying e is significantly improved, and on the other hand, by applying The groove increases the entire surface. Hereinafter, specific examples of the invention will be illustrated by way of illustration. [Embodiment] Fig. 1a shows a carrier tube 1' and a sputter material 2 (shown as a section in the illustration) is applied to a carrier tube. The interlock is generated by the v-shaped circumferential notch 3. The #notch 3 is regularly broken along the circle of the carrier tube. Figure (10) shows a similar configuration, the notch 3 has a mineral tooth shape, and the figure, the shoulder is not similar to the structure 'the notch 3" is formed in the shape of a trapezoidal groove, 134398.doc 200930824 and Figure lb The matching mines show an undercut toothed notch 3 on both sides due to the trapezoidal shape | the undercut is shown only on one side. Although in the figures la to lc, the 漉 姑 姑 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ In the case of a different structure, the metallurgical material 2 and the gaps 3, 3, and 3 are not part of the surface of the carrying camp 1. e In Figure 2, the cross sections of the notches 3, 3, and 3" are visible.

缺口瑀V形,該等缺口 3,為鑛齒狀且在一側顯示—底切, 且該等缺口 3"具有—梯形橫截面,底切是由梯形之形狀而 形成於兩側。 圖3a至3e顯示具有部分切割濺鍵材料2的濺餘材管卜 其係藉由置於該_#1上的隆起部4、4ι及4"而固定。 該等隆起部4、4·、4”相對於符合圖la至le的該等缺口是負 的。其等係焊接至該濺鍍管!的表面上。類似於圖2, 一局 P刀割濺鍍靶材配置分別係顯示於圖4a至4。中,該等隆起 4 4 4、4係顯示為一截面圖。 -在圖5a與5b中’係說明應用缺口的另一可能性。圖“顯 示具有一近似正方形橫戴面的凸起缺口 5,圖5b顯示具有 一圓形橫截面的缺口 5、類似於圖1與2中之缺口 3、3、3" 的缺口 5 5係非連續地應用。爲使冷卻劑通過該承栽管1 的内。P,該承載—内部閉合表面係需要的。 類似於圖1,圖6&至6。顯示缺口 6、6,、6"係形成為連續 的螺旋狀,該濺鍍材料2係顯示為切口,且該承載管鳩顯 不為具有缺口6、6,、6”的橫載面之詳細說明的一側視圖。 134398.d〇( • 11 · 200930824 隨著該等缺口及/或隆起部的基本形式之示例性描述, 兩種具體實例係如下所描述。 實例1 : 提供具有非磁性不銹鋼而全長為3191 mm、外徑為133 mm且一壁厚為4 mm的一承載管1,其在每個區域中具有如 缺口 3、6的一螺旋狀螺紋結構,而之後將塗敷上該濺鍍材 料2。爲此,符合圖ia或6a的一螺旋狀溝渠係藉由一車床 ⑩ 而被引入’起始於從整個承載管1之各端的20 mm之距離 處’該螺$疋狀缺口 3、6具有一基本的2 mm之寬度,及一 2 mm的深度與一 5 mm的螺距(類似於一螺紋)。如此加工的 該承載管1之區域具有一電鍍黏附塗料。如此製備的承載 管1接著藉由在如舉例而言揭示於德國專利DE 100 43 748 中所描述的一直立澆鑄操作中以液體錫作為濺鍍材料2之 澆鑄而予以包裝。該濺鍍材料2的壁厚為15mm。 在鑄造完而該濺鍍材料2冷卻以後,該濺鍍材料2的外表 0 面例如藉由一車床而加工濺鍍材料2所需之壁厚13 mm。此 完成的濺鍍靶材現在可用於商用的管狀陰極以製造薄膜。 實例2 : 提供具有非磁性不錄鋼而長度為550 mm、外徑為133 mm且壁厚為4 mm的承載管1,其在每個區域中具有一螺旋 狀缺口 3、6(類似於實例1中的螺紋結構),而該濺鍍材料2 將被應用於缺口中。爲此,如圖lb、6b中所說明的一螺旋 狀缺口 3'、6'係藉由一車床而被引入,其各自起始於從該 承載管之末端的20 mm距離處。該缺口 3,、6,在一侧顯示出 134398.doc •12· 200930824 ㈣^釈口 3、6,的基本寬度為4 nun,深度為2mm, 該螺旋狀缺口 3、6'的間距為5 mm(類似於一螺距)。該承 載管1的加工部分係藉由喷砂處理而額外粗糙化、去除油 污及清潔。 ” 該承載管1係位於具有相應長度之一橡膠軟管的中心, • °亥承載管1與該橡膠管之間的一平均距離係沿圓周予以形 成。位於圓柱形橡膠軟管與該承載管1之間的距離(空間)填 0 充具有5〇%銅粉與50%銦粉的一粉末混合物。承載管i的同 心配置的兩端,金屬粉末與橡膠軟管係藉由橡膠塞以一防 水的方式予以密封,以使銅銦粉末混合物包圍在橡膠軟管 與承載管1之間。 此配置在一冷等壓加壓中受到一 1500巴(bar)的等壓平衡 水壓°亥粉末混合物因而係緊密至幾乎1 00%的其理論密 度,該粉末部分滲入至該缺口 3,、6,的底切。該橡膠塞與 该橡膠軟管在壓製後予以移除。承載管1之合成管與濺鍍 〇 材料2係加工於外表面上,以獲得濺鍍材料2之一均勻厚 度°該完成的濺鍍靶材係插入一商用管狀陰極中,且用以 製造薄膜。 【圖式簡單說明】 圖1a、圖1b與圖lc分別顯示將一缺口引入一承載管中如 同未損壞結構之多種可能性, 囷2a、圖2b與圖2C顯示符合圖1的局部載面圖, 圖3a、圖3b與圖3C顯示在該承載管之該外殼表面上的隆 起部,即,符合圖1之負的缺口, 134398.doc -13- 200930824 圖4a、圖4b與圖4c顯示濺鍍靶材配置之局部 有符合圖2的濺鍍管上之隆起部, 具 圖5a與圖5b顯示該承載瞢φ 戰S中局部有限的凸起,及 圖6a、圖6b與圖6c顯示符合圖 ^ ^ 圖1作爲連續螺旋結構的 口,包含各別缺口輪廓的一詳細表示。【主要元件符號說明】 缺 ❿ 1 承載管、濺鍍靶材管 2 減鍵材料 3、3,、3" 缺口 4 ' 4' ' 4" 隆起部 5、 5' 凸起缺口 6、 6'、6" 缺口The notch is V-shaped, and the notches 3 are mineral-toothed and shown on one side-undercut, and the notches 3" have a trapezoidal cross-section, and the undercut is formed on both sides by the shape of a trapezoid. Figures 3a to 3e show a splashed material tube having a partially cut splash material 2 which is fixed by the ridges 4, 4, and 4" placed on the _#1. The ridges 4, 4, 4" are negative with respect to the notches conforming to Figures la to le. They are welded to the surface of the sputter tube! Similar to Figure 2, a P-cut The sputter target configurations are shown in Figures 4a through 4, respectively, and the ridges 4 4 4, 4 are shown as a cross-sectional view - in Figures 5a and 5b - another possibility of applying a gap is illustrated. "Showing a raised notch 5 having an approximately square cross-face, Figure 5b shows a notch 5 having a circular cross-section, a notch 5, similar to the notches 3, 3, 3" in Figures 1 and 2, being discontinuous Application. In order to pass the coolant through the inside of the carrier tube 1. P, the load - the internal closed surface is required. Similar to Figure 1, Figure 6 & to 6. The notches 6, 6, and 6" are formed in a continuous spiral shape, and the sputter material 2 is shown as a slit, and the carrier tube is not detailed in the cross-sectional surface having the notches 6, 6, and 6”. A side view of the description. 134398.d〇 (• 11 · 200930824 With the exemplary description of the basic forms of the notches and/or ridges, two specific examples are described below. Example 1: Provided with non-magnetic stainless steel A carrier tube 1 having a total length of 3191 mm, an outer diameter of 133 mm and a wall thickness of 4 mm has a helical thread structure such as notches 3, 6 in each region, and will be coated thereafter. Sputtering material 2. For this purpose, a spiral ditch according to Fig. ia or 6a is introduced by a lathe 10 'starting at a distance of 20 mm from each end of the entire carrying tube 1' The notches 3, 6 have a basic width of 2 mm, and a depth of 2 mm and a pitch of 5 mm (similar to a thread). The area of the carrier tube 1 thus processed has a plating adhesion coating. The carrier tube 1 is then disclosed by way of example in German patent DE 100 43 The upright casting operation described in 748 is packaged by casting liquid tin as the sputtering material 2. The thickness of the sputtering material 2 is 15 mm. After the casting is completed and the sputtering material 2 is cooled, the sputtering is performed. The outer surface 0 of the material 2 is, for example, a wall thickness of 13 mm required to process the sputter material 2 by a lathe. The finished sputter target can now be used in commercial tubular cathodes to make films. Example 2: Providing non-magnetic A carrier tube 1 having a length of 550 mm, an outer diameter of 133 mm and a wall thickness of 4 mm, which does not record steel, has a spiral notch 3, 6 in each region (similar to the thread structure in the example 1), The sputter material 2 will be applied to the notch. For this purpose, a spiral notch 3', 6' as illustrated in Figures lb, 6b is introduced by a lathe, each starting from 20 mm from the end of the carrier tube. The notches 3, 6, show 134398.doc on the one side. •12·200930824 (4)^釈3,6, the basic width is 4 nun, the depth is 2mm, the spiral The spacing of the notches 3, 6' is 5 mm (similar to a pitch). The processed portion of the carrier tube 1 is sprayed by spraying Sand treatment for additional roughening, oil removal and cleaning.” The carrier tube 1 is located in the center of a rubber hose of one of the corresponding lengths. • An average distance between the carrier tube 1 and the rubber tube is circumferentially Formed. The distance (space) between the cylindrical rubber hose and the carrier tube 1 is filled with a powder mixture of 5% copper powder and 50% indium powder. Both ends of the concentric arrangement of the carrier tube i, metal The powder and rubber hose are sealed in a watertight manner by a rubber stopper so that the copper indium powder mixture is enclosed between the rubber hose and the carrier tube 1. This configuration is subjected to a pressure of 1500 bar of equal pressure equilibrium water pressure in a cold isostatic pressurization and is thus compacted to a theoretical density of almost 100%, the powder partially infiltrating into the gap 3, 6, the undercut. The rubber stopper and the rubber hose are removed after pressing. The composite tube of the carrier tube 1 and the sputtered ruthenium material 2 are processed on the outer surface to obtain a uniform thickness of the sputtering material 2. The completed sputtering target is inserted into a commercial tubular cathode and used to manufacture a film. . BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1a, FIG. 1b and FIG. 1c respectively show various possibilities for introducing a notch into a carrier tube as if it were an undamaged structure, and FIG. 2a, FIG. 2b and FIG. 2C show a partial surface view in accordance with FIG. Figure 3a, Figure 3b and Figure 3C show the ridges on the surface of the housing of the carrier tube, i.e., the negative gaps in accordance with Figure 1, 134398.doc -13 - 200930824 Figure 4a, Figure 4b and Figure 4c show splashes The portion of the plated target configuration has a ridge on the sputter tube of Fig. 2, and Fig. 5a and Fig. 5b show the locally limited ridges in the load 瞢 φ, and Fig. 6a, Fig. 6b and Fig. 6c show Figure ^ ^ Figure 1 is a port of a continuous spiral structure containing a detailed representation of the individual notch profiles. [Description of main component symbols] Defects 1 Carrier tube, sputter target tube 2 Reduced material 3, 3, 3" Notch 4 ' 4' ' 4" Protrusion 5, 5' Raised notch 6, 6', 6" gap

134398.doc134398.doc

Claims (1)

200930824 十、申請專利範圍: ^的::鍍靶材’具有—承栽管與-配置在其外殼表面上 置於2枓’其特徵在於:環狀或螺旋狀圓周缺口係配 直;固繞該承截營之 戰吕之縱軸的該承載管之該外殼表面上, 且该濺鍍材料接合缺口, 且忒專缺口係刀布在該承載管 之長度上的該濺鍍材料之區域中。 Ο 2. Π求項1之賤鍵㈣’其特徵在於該等缺口具有一等 :或大於粉末形式的該減錄材料之平均粒度的十倍之深 3.如請求項1之濺鍍靶材 少為0.5 mm的深度。 其特徵在於該等缺口具有一至 4. 如請求項1至3中任— 口係形成為凹槽。 5. 如請求項1至3中任— 口呈現底切形式。 6. 如請求項1至3中任— 口具有如隆起部之一 料所圍繞》 項之濺鍍靶材,其特徵在於該等缺 項之減餘材,其特徵在於該等缺 ❹ 項之濺鍍靶材’其特徵在於該等缺 負形°亥等隆起部係藉由該濺鍍材 口係以一不連續的方式沿圓周予以配置。,於該等勒 8.如請求項〗至3中任—項之濺鍍靶 管之長度至少與以—管狀形的::徵在於該承載 -樣長。 飞配置的該濺鍍材料之長度 9. 一種用於如請求項1至3中任— 之一濺鍍靶材的製造方 134398.doc 200930824 法 上 ’其特徵在於該濺鍍材料係熔 ’該淹鑛材料係澆鑄至該等缺口 :及"缚於孩承裁管 ίο. —種如請求項丨至3中任一項之一濺鍍靶材的製造方法, 其特徵在於一粉末方式的一濺鍍材料係壓製於該承載管 上’該滅鍵材料係廢製至該等缺口中。 11.如請求項1 〇之方法’其特徵在於等壓加壓係予以執行。 ❹200930824 X. Patent application scope: ^:: The plated target 'has a bearing tube and is placed on the surface of the outer casing to be placed 2". It is characterized by: annular or spiral circumferential notch with straight; On the surface of the outer casing of the carrier tube of the vertical axis of the battle of the camp, the sputter material is engaged with the notch, and the niobium is notched in the region of the sputter material over the length of the carrier tube. Ο 2. The 贱 key of the item 1 (4) is characterized in that the gaps have an equal: or greater than ten times the average grain size of the subtractive material in powder form. 3. The sputter target of claim 1 Less than 0.5 mm depth. It is characterized in that the gaps have one to four, as in any of claims 1 to 3, which are formed as grooves. 5. If any of the requirements of items 1 to 3 is presented as an undercut. 6. The sputter target of any of the items 1 to 3 having a circumscribing part of the ridge, characterized by the missing material of the missing items, characterized by the missing items The sputtering target is characterized in that the ridges and the like are arranged circumferentially in a discontinuous manner by the sputtering material. The length of the sputter target tube of any of the above items is as follows: at least the length of the sputtered target tube is: - the length of the load. The length of the sputter material of the flying configuration. 9. A manufacturer for sputtering a target as claimed in any of claims 1 to 3, 134,398.doc 200930824, which is characterized in that the sputter material is melted. The method of manufacturing a sputtered material is a method of manufacturing a sputter target according to any one of claims 3 to 3, characterized in that it is cast into the gaps: and " A sputter material is pressed onto the carrier tube. The bond material is recycled to the gaps. 11. The method of claim 1 wherein the isostatic pressurization is performed. ❹ 134398.doc134398.doc
TW97135813A 2007-09-18 2008-09-18 Tubular sputter target with exterior surface of the carrier tube structured in a trench-type manner TWI398536B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE200710044651 DE102007044651B4 (en) 2007-09-18 2007-09-18 Pipe sputtering target with grave-shaped structured outer surface of the support tube and method for its preparation

Publications (2)

Publication Number Publication Date
TW200930824A true TW200930824A (en) 2009-07-16
TWI398536B TWI398536B (en) 2013-06-11

Family

ID=40089954

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97135813A TWI398536B (en) 2007-09-18 2008-09-18 Tubular sputter target with exterior surface of the carrier tube structured in a trench-type manner

Country Status (4)

Country Link
EP (1) EP2188410A1 (en)
DE (1) DE102007044651B4 (en)
TW (1) TWI398536B (en)
WO (1) WO2009036910A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103781936A (en) * 2011-06-10 2014-05-07 普莱克斯技术有限公司 Rotary sputter target assembly

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2287356A1 (en) * 2009-07-31 2011-02-23 Bekaert Advanced Coatings NV. Sputter target, method and apparatus for manufacturing sputter targets
EP2365515A1 (en) * 2010-03-09 2011-09-14 Applied Materials, Inc. Rotatable target, backing tube, sputtering installation and method for producing a rotatable target
JP5576562B2 (en) 2010-07-12 2014-08-20 マテリオン アドバンスト マテリアルズ テクノロジーズ アンド サービシーズ インコーポレイティド Assembly for connecting rotary target backing tube
US9334563B2 (en) 2010-07-12 2016-05-10 Materion Corporation Direct cooled rotary sputtering target
EP2420589B1 (en) 2010-08-19 2013-03-20 Solar Applied Materials Technology Corp. Hollow target assembly
EP2723915A1 (en) 2011-06-27 2014-04-30 Soleras Ltd. Sputtering target
CN111519141B (en) * 2020-03-30 2022-05-27 维达力实业(深圳)有限公司 Lithium alloy target material and preparation method and application thereof
CN112743075A (en) * 2020-12-29 2021-05-04 宁波江丰电子材料股份有限公司 Binding method of tubular target

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5354446A (en) 1988-03-03 1994-10-11 Asahi Glass Company Ltd. Ceramic rotatable magnetron sputtering cathode target and process for its production
JPH0539566A (en) 1991-02-19 1993-02-19 Mitsubishi Materials Corp Sputtering target and its production
DE4115663A1 (en) 1991-05-14 1992-11-19 Leybold Ag Target mfr. for a sputtering device - by plasma-spraying a metal, alloy or cpd. on to a target substrate
JPH07173622A (en) 1993-12-17 1995-07-11 Kobe Steel Ltd Cylindrical target for pvd method
WO2000015863A1 (en) 1998-09-11 2000-03-23 Tosoh Smd, Inc. Low temperature sputter target bonding method and target assemblies produced thereby
DE10043748B4 (en) 2000-09-05 2004-01-15 W. C. Heraeus Gmbh & Co. Kg Cylindrical sputtering target, process for its production and use
DE10102493B4 (en) * 2001-01-19 2007-07-12 W.C. Heraeus Gmbh Tubular target and method of making such a target
DE10231203B4 (en) 2002-07-10 2009-09-10 Interpane Entwicklungs-Und Beratungsgesellschaft Mbh Target support assembly
EP1834007A1 (en) * 2004-12-27 2007-09-19 Cardinal CG Company Oscillating shielded cylindrical target assemblies and their methods of use
JP4680841B2 (en) * 2006-06-29 2011-05-11 日本ピストンリング株式会社 Tubular target for PVD

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103781936A (en) * 2011-06-10 2014-05-07 普莱克斯技术有限公司 Rotary sputter target assembly

Also Published As

Publication number Publication date
TWI398536B (en) 2013-06-11
DE102007044651B4 (en) 2011-07-21
DE102007044651A1 (en) 2009-04-02
WO2009036910A1 (en) 2009-03-26
EP2188410A1 (en) 2010-05-26

Similar Documents

Publication Publication Date Title
TW200930824A (en) Tubular sputter target with exterior surface of the carrier tube structured in a trench-type manner
TWI404815B (en) Sputtering target structure
KR100764269B1 (en) Method for forming sputter target assemblies
TWI383060B (en) Sputtering target
JP5428741B2 (en) Manufacturing method of cylindrical sputtering target
US20070084719A1 (en) Inertial bonding method of forming a sputtering target assembly and assembly made therefrom
EP2007912B1 (en) Method of manufacturing a stave cooler for a metallurgical furnace and a resulting stave cooler
TW200925310A (en) Target designs and related methods for coupled target assemblies, methods of production and uses thereof
JP2010150610A (en) Cylindrical sputtering target
TW201211292A (en) Method for bonding components of a sputtering target, a bonded assembly of sputtering target components and the use thereof
US8263908B2 (en) Heater plate and a method for manufacturing the heater plate
JP2899467B2 (en) Manufacturing method of piston
US7555822B2 (en) Laser generation of thermal insulation blanket
US3059295A (en) Composite mold for continuous casting
JP5840679B2 (en) Non-continuous bonding of sputtering target to backing material
KR20060051255A (en) Abrasion sheet and manufacturing method thereof
CN1625450A (en) Mold copper plate for continuous casting and its production method
JPH0521663B2 (en)
JP2018124022A (en) Heat exchanger and manufacturing method thereof
JP2014508896A (en) Pressure vessel sealing
JP4030823B2 (en) Panel heater manufacturing method
US11001921B2 (en) Processes for low pressure, cold bonding of solid lithium to metal substrates
JP6830421B2 (en) Manufacturing method of cylindrical sputtering target
JPS61129257A (en) Manufacture of continuous casting mold
JP5291679B2 (en) Hollow target assembly

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees