JPH07173622A - Cylindrical target for pvd method - Google Patents

Cylindrical target for pvd method

Info

Publication number
JPH07173622A
JPH07173622A JP31860293A JP31860293A JPH07173622A JP H07173622 A JPH07173622 A JP H07173622A JP 31860293 A JP31860293 A JP 31860293A JP 31860293 A JP31860293 A JP 31860293A JP H07173622 A JPH07173622 A JP H07173622A
Authority
JP
Japan
Prior art keywords
target
base body
substrate
evaporation material
pvd method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31860293A
Other languages
Japanese (ja)
Inventor
Yoichi Inoue
陽一 井上
Kunihiko Tsuji
邦彦 辻
Katsuhiko Shimojima
克彦 下島
Hiroshi Tamagaki
浩 玉垣
Kouji Hanaguri
孝次 花栗
Homare Nomura
誉 野村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to JP31860293A priority Critical patent/JPH07173622A/en
Publication of JPH07173622A publication Critical patent/JPH07173622A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To prevent peeling between a target base body and evaporating material by providing a position deviation preventing part on the boundary between a target base body and evaporating body. CONSTITUTION:A target consists of a cylindrical base body 1 and a evaporating material 2 covering the outer circumference of the base body 1. The base body 1 is made of a hollow body of round cross section, forming a position deviation preventing part 3 at the center part in longitudinal direction. The position deviation preventing part 3 is made of projecting part formed along the outer circumferential face of the base body 1. An evaporating body 2 is integrally joined on the outer circumferential face of the base body 1 made of Cr, etc., as a specific thickness layer. This target is mounted on PVD device. As a temp. rises in operation, the deviation between both tends to occur due to difference in thermal expansion between the evaporating body 2 and base body 1, the deviation is impeded by the position deviation preventing part 3, preventing the deviation between both. The position deviation preventing part 3 constituted with the recessed part formed at the center part of the base body 1 provides the same working effect.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、PVD法(Physical V
apor Deposition: 物理蒸着法) 用円筒状ターゲットに
関する。
The present invention relates to the PVD method (Physical V).
apor Deposition: Physical vapor deposition method)

【0002】[0002]

【従来の技術】PVD法として、アークイオンプレーテ
ィング法、スパッタリング法等があり、例えば、特開平
5−106025号公報や特開平5−230634号公
報に記載のものが公知である。そして、この種PVD法
に用いられるターゲットとして、例えば、特開平5−3
9566号公報に記載のものが公知である。
2. Description of the Related Art As a PVD method, there are an arc ion plating method, a sputtering method and the like. For example, those described in JP-A-5-106025 and JP-A-5-230634 are known. Then, as a target used in this type of PVD method, for example, Japanese Patent Laid-Open No. 5-3
The one described in Japanese Patent No. 9566 is known.

【0003】前記特開平5−39566号公報には、タ
ーゲットとして、円筒状の基体の外周面にHIP(Hot
Isostatic Pressing: 熱間静水圧加圧法) により蒸発材
( ターゲット素材) を接合する技術が開示されている。
さらに、同公報には、Cr ターゲットの製造にあたっ
て、ステンレス製のパイプを基体として、その周囲に蒸
発材としてCr 粉末をHIP処理にて同心状に成形した
ものが開示されている。
In Japanese Unexamined Patent Publication (Kokai) No. 5-39566, HIP (Hot) is used as a target on the outer peripheral surface of a cylindrical substrate.
Isostatic Pressing: Evaporating material by hot isostatic pressing method)
A technique for joining (target materials) is disclosed.
Further, in the publication, in the production of a Cr target, a stainless steel pipe is used as a base body, and Cr powder as an evaporation material is concentrically formed around the pipe by HIP treatment.

【0004】[0004]

【発明が解決しようとする課題】前記のステンレスチュ
ーブを基体とし、該基体の周囲に蒸発材をHIP処理で
接合した従来のターゲットでは、HIP処理の高温から
の冷却過程で、基体と蒸発材との熱膨張係数の差によ
り、基体の方が大きく収縮するため、多くの場合、蒸発
材と基体間に剥離や割れが発生していた。この現象はタ
ーゲットの全長や直径が小さな場合には顕在化し難い
が、ターゲットの大型化に伴い高い確率で現れるように
なる。
In the conventional target in which the above-mentioned stainless steel tube is used as a substrate and the evaporation material is bonded to the periphery of the substrate by the HIP process, the substrate and the evaporation material are separated from each other in the cooling process from the high temperature of the HIP process. Due to the difference in the coefficient of thermal expansion, the base body shrinks more greatly, and in many cases peeling or cracking occurs between the evaporation material and the base body. This phenomenon is difficult to be manifested when the target has a small total length and a small diameter, but becomes more likely to appear as the target becomes larger.

【0005】前記の剥離等が発生しているターゲット
を、PVD装置に組み込んで使用すると、該使用中の温
度上昇にともない、基体とその外周部の蒸発材との間に
ターゲット軸方向のずれが発生し、使用できない状態に
なった。そこで、本発明は、基体と蒸発材との間の剥離
等に伴うずれの問題を解決したPVD法用円筒状ターゲ
ットを提供することを目的とする。
When the above-mentioned target in which peeling has occurred is incorporated into a PVD apparatus and used, a shift in the target axial direction occurs between the substrate and the evaporation material on the outer periphery of the target due to the temperature rise during use. It occurred and became unusable. Therefore, an object of the present invention is to provide a cylindrical target for the PVD method, which solves the problem of misalignment between the substrate and the evaporation material due to separation and the like.

【0006】[0006]

【課題を解決するための手段】前記目的を達成するため
に、本発明は、次の手段を講じた。即ち、請求項1記載
の発明の特徴とするところは、円筒状の基体の外周面を
蒸発材で被覆してなるPVD法用円筒状ターゲットにお
いて、前記基体と蒸発材との境界部に、両者の軸方向の
ずれを防止するための位置ずれ防止部が設けられた点に
ある。
In order to achieve the above object, the present invention takes the following means. That is, the feature of the invention of claim 1 is that in a cylindrical target for the PVD method in which the outer peripheral surface of a cylindrical substrate is covered with an evaporating material, both are formed at the boundary between the substrate and the evaporating material. The point is that a position deviation prevention portion is provided to prevent deviation in the axial direction.

【0007】また、請求項2記載の本発明の特徴とする
ところは、位置ずれ防止部が、基体の外周面に形成され
た凹部または凸部から構成されている点にある。請求項
3記載の本発明の特徴とするところは、円筒状の基体の
外周面に蒸発材を接合してなるPVD法用円筒状ターゲ
ットにおいて、前記基体を、前記蒸発材との熱膨張差が
小さい材料で形成した点にある。
Further, the feature of the present invention as set forth in claim 2 resides in that the position shift prevention portion is composed of a concave portion or a convex portion formed on the outer peripheral surface of the base body. According to a third aspect of the present invention, in a cylindrical target for a PVD method in which an evaporation material is bonded to an outer peripheral surface of a cylindrical base material, the difference in thermal expansion between the base material and the evaporation material is It is formed of a small material.

【0008】請求項4記載の本発明の特徴とするところ
は、円筒状の基体の外周面に蒸発材をHIP処理により
接合してなるPVD法用円筒状ターゲットにおいて、前
記基体をHIP処理の冷却過程で変態を起こす合金鋼で
構成し、前記蒸発材をクロムにより構成した点にある。
According to a fourth aspect of the present invention, in a cylindrical target for a PVD method, wherein an evaporation material is bonded to the outer peripheral surface of a cylindrical substrate by HIP treatment, the substrate is cooled by HIP treatment. This is because it is made of alloy steel that undergoes transformation in the process and the evaporation material is made of chromium.

【0009】[0009]

【作用】請求項1記載の本発明によれば、基体と蒸発材
との境界部に、両者の軸方向のずれを防止するための位
置ずれ防止部が設けられているので、該ターゲットをP
VD装置に装着して使用中に温度が上昇して、蒸発材と
基体との熱膨張差により両者間に軸方向のずれが生じよ
うとしても、そのずれは位置ずれ防止部により阻止さ
れ、両者間のずれが防止される。
According to the present invention as set forth in claim 1, since a positional deviation preventing portion for preventing axial deviation of the base material and the evaporation material is provided at the boundary portion between the base material and the evaporation material, the target is
Even if an axial deviation occurs between the evaporation material and the base due to a difference in thermal expansion between the evaporation material and the base body while being attached to the VD device during use, the deviation is prevented by the position deviation prevention portion. Misalignment is prevented.

【0010】請求項2記載の発明では、基体の外周面に
形成された凹部または凸部から前記位置ずれ防止部を構
成しているので、PVD装置に装着しての使用中に両者
の軸方向のずれを確実に防止する。請求項3記載の発明
では、前記基体を、前記蒸発材との熱膨張差が小さい材
料で形成しているので、温度変化による両者間の位置ず
れが防止される。
According to the second aspect of the present invention, since the position shift preventing portion is composed of the concave portion or the convex portion formed on the outer peripheral surface of the base body, the axial direction of both of them is axially used during mounting on the PVD apparatus. Be sure to prevent misalignment. In the invention according to claim 3, since the base body is formed of a material having a small difference in thermal expansion from the evaporation material, positional displacement between the base material and the evaporation material due to temperature change is prevented.

【0011】請求項4記載の発明では、前記基体をHI
P処理の冷却過程で変態を起こす合金鋼で構成し、前記
蒸発材をクロムにより構成しているので、HIP処理の
冷却過程では、全温度域において基体は熱収縮するとと
もに、通常300〜500°Cの間の特定の温度域にお
いて変態による膨張も起こるため、結果として、冷却過
程での見掛けの熱膨張率が通常の鉄に比べて小さくなっ
てCr に近づくため、基体と蒸発材間での剥離が防止さ
れる。
According to a fourth aspect of the invention, the substrate is HI.
Since it is made of alloy steel that undergoes transformation in the cooling process of P treatment and the evaporation material is made of chromium, in the cooling process of HIP treatment, the substrate is heat-shrinked in the entire temperature range and is usually 300 to 500 °. Expansion due to transformation also occurs in a specific temperature range between C, and as a result, the apparent coefficient of thermal expansion in the cooling process becomes smaller than that of ordinary iron and approaches Cr, so that between the substrate and the evaporation material. Peeling is prevented.

【0012】[0012]

【実施例】以下、本発明の実施例を図面に基づき説明す
る。図1において、本発明のターゲットは、円筒状の基
体1 と、該基体1 の外周部を覆う蒸発材2 とからなる。
前記基体1 は、断面円形の中空体からなり、その長手方
向中央部に位置ずれ防止部3 が形成されている。この位
置ずれ防止部3 は、基体1 の外周面に周方向に沿って形
成された凸部からなる。
Embodiments of the present invention will be described below with reference to the drawings. In FIG. 1, the target of the present invention comprises a cylindrical substrate 1 and an evaporation material 2 which covers the outer peripheral portion of the substrate 1.
The base body 1 is made of a hollow body having a circular cross section, and a displacement prevention portion 3 is formed at the center in the longitudinal direction thereof. The position shift prevention portion 3 is composed of a convex portion formed on the outer peripheral surface of the base body 1 along the circumferential direction.

【0013】前記蒸発材2 はクロム(Cr )からなり、
HIP処理により前記基体1 の外周面に所定厚みの層と
して一体接合されている。前記ターゲットの製造方法は
次のとおりである。即ち、断面中実の棒体からなる基体
素材の外周に、凸部からなる位置ずれ防止部を加工し、
この基体素材の周囲に、前記特開平5−39566号公
報に記載のカプセルを使用して、HIP処理によりCr
蒸発材を接合する。HIP処理は、1280°Cで10
00kgf/cm2 の条件で5時間行った。
The evaporation material 2 is made of chromium (Cr),
It is integrally joined to the outer peripheral surface of the substrate 1 as a layer having a predetermined thickness by the HIP process. The method of manufacturing the target is as follows. That is, a displacement preventing portion formed of a convex portion is processed on the outer periphery of a base material made of a solid rod body,
Around the base material, the capsule described in the above-mentioned JP-A-5-39566 is used to perform Cr treatment by HIP treatment.
Join the evaporation material. HIP treatment is 10 at 1280 ° C
It was carried out for 5 hours under the condition of 00 kgf / cm 2 .

【0014】HIP処理後、基体素材の中心部に冷却水
路用の貫通穴4 を加工し、両端と外周を所定の形状に仕
上げ加工した。図2に示すものは、前記位置ずれ防止部
3 を基体1 の中央部に形成した凹部により構成したもの
であり、その他の構成並びに製造方法は前記図1のもの
と同じである。
After the HIP treatment, a through hole 4 for a cooling water passage was formed in the center of the base material, and both ends and the outer periphery were finished into a predetermined shape. What is shown in FIG.
3 is composed of a concave portion formed in the central portion of the substrate 1, and the other structure and manufacturing method are the same as those in FIG.

【0015】なお、図示省略するが、前記位置ずれ防止
部3 を有しないターゲットを従来例として前記と同様の
製造方法により製造した。そして、この従来例のターゲ
ットと前記図1、2に示す本発明の実施例のターゲット
とを、アークイオンプレーティング装置にセットして比
較試験を行った。これら3種類のターゲットの材料構成
及び外形形状は同一である。
Although not shown in the drawings, a target having no position deviation prevention portion 3 was manufactured by a manufacturing method similar to the above as a conventional example. Then, the target of this conventional example and the target of the example of the present invention shown in FIGS. 1 and 2 were set in an arc ion plating apparatus and a comparative test was conducted. The material configurations and outer shapes of these three types of targets are the same.

【0016】前記従来例のターゲットは、運転時間の経
過と共に、蒸発材と基体の間の軸方向のずれが発生し、
総運転時間10時間以下でずれが3mmに達して、それ
以上の運転が不可能になった。これは、運転中の熱負荷
により、蒸発材の部分が直接水冷された基体よりも温度
が上昇し、熱膨張の結果、運転中に蒸発材と基体との間
の接触が不十分となって、軸方向のずれの原因となった
と考えられる。
In the target of the above-mentioned conventional example, an axial deviation between the evaporating material and the substrate occurs with the passage of operating time,
When the total operation time was 10 hours or less, the deviation reached 3 mm, and further operation became impossible. This is because the heat load during operation raises the temperature of the evaporative material part more than the directly water-cooled substrate, and thermal expansion results in insufficient contact between the evaporative material and the substrate during operation. It is considered that this caused the axial displacement.

【0017】一方、図1、2に示す本発明の実施例のタ
ーゲットは、いずれも100時間経過後も前記のような
ずれの発生は認められなかった。図3に示すものは、本
発明の他の実施例であり、前記位置ずれ防止部3 が、中
空または中実の円筒状基体1 の外周部に軸方向に所定間
隔で形成した環状の凹凸部により構成されている。
On the other hand, none of the targets of the examples of the present invention shown in FIGS. 1 and 2 showed the above-mentioned deviation even after 100 hours had elapsed. FIG. 3 shows another embodiment of the present invention, in which the positional deviation prevention portion 3 is an annular uneven portion formed on the outer peripheral portion of the hollow or solid cylindrical substrate 1 at predetermined intervals in the axial direction. It is composed by.

【0018】図4に示すものは、本発明の他の実施例で
あり、前記位置ずれ防止部3 が基体1 の外周部に形成さ
れた凹凸部によりネジ状に構成されている。前記図3、
4のターゲットにおいても、前記図1、2のものと同様
の作用効果を奏する。尚、前記図1、2に示す各実施例
において、HIP処理後の材料をサンプリングして、基
体1 と蒸発材2 間の接合状態を観察したところ、外見上
は明確な剥離は観察されないものの、ミクロ的にみると
接合境界面近くのCr 蒸発材側で、分離が発生してい
た。この分離は、HIP処理における冷却過程に生じた
ものと考えられる。
FIG. 4 shows another embodiment of the present invention, in which the displacement prevention portion 3 is formed in a screw shape by the uneven portion formed on the outer peripheral portion of the base 1. FIG. 3,
Also in the target of No. 4, the same effect as that of the above-mentioned ones of FIGS. In each of the examples shown in FIGS. 1 and 2, when the material after HIP treatment was sampled and the bonding state between the substrate 1 and the evaporation material 2 was observed, no apparent delamination was observed, Microscopically, separation occurred on the Cr vaporizer side near the joint interface. This separation is considered to have occurred during the cooling process in the HIP process.

【0019】そこで、前記HIP処理における冷却過程
に生じる剥離を防止すべく、次の構成を採用した。即
ち、円筒状の基体1 の外周面に蒸発材2 をHIP処理に
より接合してなるPVD法用円筒状ターゲットにおい
て、前記基体1 を、前記蒸発材2 との熱膨張差が小さい
材料で形成する。
Therefore, in order to prevent peeling occurring in the cooling process in the HIP process, the following constitution is adopted. That is, in the cylindrical target for PVD method in which the evaporation material 2 is joined to the outer peripheral surface of the cylindrical base material 1 by the HIP process, the base material 1 is formed of a material having a small thermal expansion difference from the evaporation material 2. .

【0020】特にCr を蒸発材2 とする場合において、
以下の構成のターゲットを提供する。即ち、基体1 をチ
タンまたはチタン合金により構成し、その周囲に蒸発材
2 のCr をHIP処理により接合して、ターゲットを製
造する。純チタンを基体1 に選んで前記ターゲット成形
を行ったところ、基体1 と蒸発材2 との境界面のミクロ
的な観察によっても両者間の剥離、分離は観察されず、
基体1 のずれの発生しないCr ターゲットが得られた。
Particularly when Cr is used as the evaporating material 2,
The target of the following configuration is provided. That is, the base 1 is made of titanium or a titanium alloy, and the evaporation material is formed around it.
The Cr of 2 is joined by HIP processing to manufacture a target. When pure titanium was selected as the substrate 1 and the target molding was performed, no separation or separation between the two was observed even by microscopic observation of the interface between the substrate 1 and the evaporation material 2.
A Cr target was obtained in which the displacement of the substrate 1 did not occur.

【0021】これは、チタンまたはその合金を基体1 と
して、Cr ターゲットを構成すると、基体1 と蒸発材2
との間の熱膨張差が小さいため、基体1 ・蒸発材2 間の
剥離が発生しないためである。また、基体1 を冷却過程
で変態を起こす合金鋼で構成し、その周囲にCr の蒸発
材2 をHIPにより接合してターゲットを製造すること
によっても前記ミクロ的な剥離を防止できる。
This is because when a Cr target is formed by using titanium or its alloy as the substrate 1, the substrate 1 and the evaporation material 2
This is because the difference in thermal expansion between the base material 1 and the evaporation material 2 does not occur because the difference in thermal expansion between the base material 1 and the evaporation material 2 does not occur. The microscopic peeling can also be prevented by forming the target by forming the base 1 from an alloy steel that undergoes transformation during the cooling process, and bonding the Cr vaporizing material 2 by HIP to the periphery thereof.

【0022】即ち、HIP処理の冷却過程では、全温度
域において基体1 は熱収縮するとともに、通常300〜
500°Cの間の特定の温度域において変態による膨張
も起こるため、結果として、冷却過程での見掛けの熱膨
張率が通常の鉄に比べて小さくなって蒸発材2 のCr に
近づくため、基体1 と蒸発材2 間での剥離が防止され
る。
That is, in the cooling process of the HIP process, the substrate 1 is heat-shrunk in the entire temperature range, and the temperature is usually 300 to 300.
Expansion due to transformation also occurs in a specific temperature range between 500 ° C, and as a result, the apparent coefficient of thermal expansion in the cooling process becomes smaller than that of ordinary iron and approaches Cr of the evaporation material 2, so that Separation between 1 and evaporation material 2 is prevented.

【0023】尚、本発明は、前記各実施例に限定される
ものではなく、例えば、請求項1〜3記載の発明におい
ては、基体と蒸発材との接合は、HIP処理によらず、
ホットプレス等で接合するものであってもよい。
The present invention is not limited to the above-mentioned respective embodiments. For example, in the invention described in claims 1 to 3, the substrate and the evaporation material are joined by HIP treatment,
It may be joined by a hot press or the like.

【0024】[0024]

【発明の効果】請求項1記載の本発明によれば、基体と
蒸発材との境界部に、両者の剥離を防止するための位置
ずれ防止部が設けられているので、該ターゲットをPV
D装置に装着して使用中に温度が上昇して、蒸発材と基
体との熱膨張差により両者間にずれが生じようとして
も、そのずれは位置ずれ防止部により阻止され、両者間
のずれが防止さ、安定したPVD法による成膜が可能に
なる。
According to the present invention as set forth in claim 1, since a displacement preventing portion is provided at the boundary between the substrate and the evaporation material to prevent separation of the both, the target is PV.
Even if the temperature rises during mounting on the D device and the thermal expansion difference between the evaporating material and the base body causes a displacement between the two, the displacement is prevented by the position displacement prevention portion, and the displacement between the two is prevented. And a stable PVD method can be used for film formation.

【0025】請求項2記載の発明では、基体と蒸発材の
軸方向ずれを防止すべく、基体の外周面に形成された凹
部または凸部から前記位置ずれ防止部を構成しているの
で、PVD装置に装着しての使用中に両者の位置ずれが
生じることは防止される。請求項3記載の発明では、両
者の熱膨張差が小さいので、温度変化により位置ずれが
生じにくい。
According to the second aspect of the present invention, in order to prevent the axial displacement of the base material and the evaporation material, the position displacement prevention portion is composed of the concave portion or the convex portion formed on the outer peripheral surface of the base material. It is possible to prevent the positional displacement between the two during use while being mounted on the device. According to the third aspect of the invention, since the difference in thermal expansion between the two is small, positional deviation is unlikely to occur due to temperature changes.

【0026】請求項4記載の発明では、前記基体をHI
P処理の冷却過程で変態を起こす合金鋼で構成し、前記
蒸発材をクロムにより構成しているので、HIP処理の
冷却過程では、全温度域において基体は熱収縮するとと
もに、通常300〜500°Cの間の特定の温度域にお
いて変態による膨張も起こるため、結果として、冷却過
程での見掛けの熱膨張率が通常の鉄に比べて小さくなっ
てCr に近づくため、基体と蒸発材間での剥離が防止さ
れる。
According to a fourth aspect of the invention, the substrate is HI.
Since it is made of alloy steel that undergoes transformation in the cooling process of P treatment and the evaporation material is made of chromium, in the cooling process of HIP treatment, the substrate is heat-shrinked in the entire temperature range and is usually 300 to 500 °. Expansion due to transformation also occurs in a specific temperature range between C, and as a result, the apparent coefficient of thermal expansion in the cooling process becomes smaller than that of ordinary iron and approaches Cr, so that between the substrate and the evaporation material. Peeling is prevented.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例を示すターゲットの断面図であ
る。
FIG. 1 is a sectional view of a target showing an embodiment of the present invention.

【図2】本発明の他の実施例を示すターゲットの断面図
である。
FIG. 2 is a sectional view of a target showing another embodiment of the present invention.

【図3】本発明の他の実施例を示すターゲットの断面図
である。
FIG. 3 is a cross-sectional view of a target showing another embodiment of the present invention.

【図4】本発明の他の実施例を示すターゲットの断面図
である。
FIG. 4 is a sectional view of a target showing another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 基体 2 蒸発材 3 位置ずれ防止部 1 base 2 evaporation material 3 misalignment prevention section

───────────────────────────────────────────────────── フロントページの続き (72)発明者 玉垣 浩 兵庫県高砂市荒井町新浜2丁目3番1号 株式会社神戸製鋼所高砂製作所内 (72)発明者 花栗 孝次 兵庫県高砂市荒井町新浜2丁目3番1号 株式会社神戸製鋼所高砂製作所内 (72)発明者 野村 誉 兵庫県高砂市荒井町新浜2丁目3番1号 株式会社神戸製鋼所高砂製作所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hiroshi Tamaki 2-3-1, Niihama, Arai-cho, Takasago, Hyogo Prefecture Takasago Works, Kobe Steel Co., Ltd. (72) Koji Hanaguri, Niihama, Arai-cho, Takasago, Hyogo No. 1 Inside the Takasago Works, Kobe Steel, Ltd. (72) In Honor Nomura Honor No. 2-3-1, Niihama, Niihama, Arai Town, Takasago City, Hyogo Prefecture Inside the Takasago Works, Kobe Steel Co., Ltd.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 円筒状の基体の外周面を蒸発材で被覆し
てなるPVD法用円筒状ターゲットにおいて、 前記基体と蒸発材との境界部に、両者の軸方向のずれを
防止するための位置ずれ防止部が設けられたことを特徴
とするPVD法用円筒状ターゲット。
1. A cylindrical target for a PVD method, comprising an outer peripheral surface of a cylindrical substrate covered with an evaporation material, for preventing axial displacement between the substrate and the evaporation material at a boundary portion between them. A cylindrical target for the PVD method, which is provided with a position shift prevention portion.
【請求項2】 位置ずれ防止部は、基体の外周面に形成
された凹部または凸部から構成されていることを特徴と
する請求項1記載のPVD法用円筒状ターゲット。
2. The cylindrical target for the PVD method according to claim 1, wherein the misregistration prevention portion is composed of a concave portion or a convex portion formed on the outer peripheral surface of the base body.
【請求項3】 円筒状の基体の外周面に蒸発材を接合し
てなるPVD法用円筒状ターゲットにおいて、 前記基体を、前記蒸発材との熱膨張差が小さい材料で形
成したことを特徴とするPVD法用円筒状ターゲット。
3. A cylindrical target for a PVD method, comprising an outer peripheral surface of a cylindrical substrate and an evaporation material bonded to the outer surface, wherein the substrate is made of a material having a small thermal expansion difference from the evaporation material. A cylindrical target for the PVD method.
【請求項4】 円筒状の基体の外周面に蒸発材をHIP
処理により接合してなるPVD法用円筒状ターゲットに
おいて、 前記基体をHIP処理の冷却過程で変態を起こす合金鋼
で構成し、前記蒸発材をクロムにより構成したことを特
徴とするPVD法用円筒状ターゲット。
4. An evaporation material is HIPed on the outer peripheral surface of a cylindrical substrate.
In a cylindrical target for the PVD method, which is joined by a treatment, the substrate is made of an alloy steel that transforms in the cooling process of the HIP treatment, and the evaporation material is made of chromium. target.
JP31860293A 1993-12-17 1993-12-17 Cylindrical target for pvd method Pending JPH07173622A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31860293A JPH07173622A (en) 1993-12-17 1993-12-17 Cylindrical target for pvd method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31860293A JPH07173622A (en) 1993-12-17 1993-12-17 Cylindrical target for pvd method

Publications (1)

Publication Number Publication Date
JPH07173622A true JPH07173622A (en) 1995-07-11

Family

ID=18100975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31860293A Pending JPH07173622A (en) 1993-12-17 1993-12-17 Cylindrical target for pvd method

Country Status (1)

Country Link
JP (1) JPH07173622A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007035227A2 (en) 2005-09-20 2007-03-29 Guardian Industries Corp. Sputtering target with bonding layer of varying thickness under target material
EP1873274A2 (en) * 2006-06-29 2008-01-02 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) PVD cylindrical target
WO2009036910A1 (en) 2007-09-18 2009-03-26 W.C. Heraeus Gmbh Tubular sputtering target having a grooved outer surface of the support tube
JP2014519554A (en) * 2011-06-10 2014-08-14 プラクスエア・テクノロジー・インコーポレイテッド Rotating sputter target assembly
WO2020158272A1 (en) * 2019-01-30 2020-08-06 Jswアフティ株式会社 Target, film formation device, and method for manufacturing object on which film is to be formed
CN112743075A (en) * 2020-12-29 2021-05-04 宁波江丰电子材料股份有限公司 Binding method of tubular target

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1926839A2 (en) * 2005-09-20 2008-06-04 Guardian, Industries Corp. Sputtering target with bonding layer of varying thickness under target material
US8123919B2 (en) 2005-09-20 2012-02-28 Guardian Industries Corp. Sputtering target with bonding layer of varying thickness under target material
WO2007035227A2 (en) 2005-09-20 2007-03-29 Guardian Industries Corp. Sputtering target with bonding layer of varying thickness under target material
EP1926839A4 (en) * 2005-09-20 2010-11-03 Guardian Industries Sputtering target with bonding layer of varying thickness under target material
US7955673B2 (en) 2006-06-29 2011-06-07 Kobe Steel, Ltd. PVD cylindrical target
EP1873274A3 (en) * 2006-06-29 2008-01-23 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) PVD cylindrical target
JP4680841B2 (en) * 2006-06-29 2011-05-11 日本ピストンリング株式会社 Tubular target for PVD
JP2008007824A (en) * 2006-06-29 2008-01-17 Nippon Piston Ring Co Ltd Cylindrical target for pvd (physical vapor deposition)
EP1873274A2 (en) * 2006-06-29 2008-01-02 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) PVD cylindrical target
WO2009036910A1 (en) 2007-09-18 2009-03-26 W.C. Heraeus Gmbh Tubular sputtering target having a grooved outer surface of the support tube
TWI398536B (en) * 2007-09-18 2013-06-11 Heraeus Materials Tech Gmbh Tubular sputter target with exterior surface of the carrier tube structured in a trench-type manner
JP2014519554A (en) * 2011-06-10 2014-08-14 プラクスエア・テクノロジー・インコーポレイテッド Rotating sputter target assembly
WO2020158272A1 (en) * 2019-01-30 2020-08-06 Jswアフティ株式会社 Target, film formation device, and method for manufacturing object on which film is to be formed
JP2020122178A (en) * 2019-01-30 2020-08-13 Jswアフティ株式会社 Target and film deposition apparatus, and method of manufacturing object of film deposition
CN113330138A (en) * 2019-01-30 2021-08-31 Jsw Afty公司 Target, film forming apparatus, and method for manufacturing object to be film formed
EP3919651A4 (en) * 2019-01-30 2022-10-19 JSW AFTY Corporation Target, film formation device, and method for manufacturing object on which film is to be formed
CN113330138B (en) * 2019-01-30 2023-11-10 Jsw Afty公司 Target, film forming apparatus, and method for producing film forming object
CN112743075A (en) * 2020-12-29 2021-05-04 宁波江丰电子材料股份有限公司 Binding method of tubular target

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