TW200928172A - Liquefied gas supply device and supply method - Google Patents

Liquefied gas supply device and supply method Download PDF

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Publication number
TW200928172A
TW200928172A TW97130636A TW97130636A TW200928172A TW 200928172 A TW200928172 A TW 200928172A TW 97130636 A TW97130636 A TW 97130636A TW 97130636 A TW97130636 A TW 97130636A TW 200928172 A TW200928172 A TW 200928172A
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Taiwan
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liquefied gas
temperature
gas supply
tool
supply device
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TW97130636A
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Chinese (zh)
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Kazuo Yokogi
Masahiro Kimoto
Terumasa Koura
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Air Liquide
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Abstract

To provide a liquefied gas supply facility and a supply method, wherein liquefaction of low vapor pressure liquefied gases in the supply piping is prevented and a stable amount can be supplied, due to excellent operability and compact configuration. Liquefied gas supply facility wherein liquefied gas is supplied from the filling container through the piping in a gaseous state to the processing device 5 which is separated from the facility, characterized in that liquid phase temperature To of the liquefied gas in the filling container la is kept below the lowest value of ambient temperature Ta of the primary piping system 2, liquefaction temperature Tc in the re-liquefaction means 3a or Tc and the storage temperature Ts in the storage means 3b are kept below liquid phase temperature To of the liquefied gas in the filling container la, and liquid-phase liquefied gas temperature Tg in the secondary vaporization means 3c is kept below the lowest value of ambient temperature Tg of the secondary piping system 4.

Description

200928172 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種液化氣體供應裝置和供應方法,且 特別是關於提供用於半導體生產之低蒸氣壓特殊材料氣體 和各種處理氣體的液化氣體供應裝置和供應方法,其中該 些氣體係以例如HF、CLF3、BCLs、SiH2CL2和WF6做為代 表。 【技術背景】 ϋ W 【先前技術】 以HF、CLF3、BCL3、SiH2CL2和WF6為代表的低蒸氣 壓液化氣體係常被用做在半導體生產製程和各種其他製程 中的特殊材料氣體和各種處理氣體。這些低蒸氣壓液化氣 體一般係以液態填入高壓氣體容器(之後稱做“容器”),且被 遞送至例如消耗該液化氣體之半導體生產工廠的設備或各 種其他處理設備。在這些情況中,做為液化氣體之消耗設 Ο 備的半導體生產工廠和其他各種處理裝置(之後稱做“處理 裝置”)並非以液態,而是以氣態接受液化氣體,並以氣態使 用它們。在此時,填充有液化氣體的容器係裝設在稱作鋼 瓶櫃的氣體供應設備,且氣體係在容器中被汽化成氣態並 透過連接至處理裝置的管道傳送。 在這樣的設備中’用來將容器中經氣化的液化氣體饋 至處理裝置的唯一能量是壓力能,其係液化氣鱧的蒸氣 壓’且通常不需使用像是泵的外部能量。因為此原因,在 低蒸氣壓的液化氣體供應系統中,因為液化氣體本身的蒸 6 200928172 氣壓非常低,所以氣體係在接近飽和蒸氣狀態且幾乎沒有 壓力減少下饋至管道中。因此,由於供應管道之局部低溫 區段的存在’及例如季節性的變化和在空調狀況下的變化 等影響,一直有在管道中使液化氣體變成液體的技術問 題。在習知的液化氣體供應系統中,如圖6和7所示,一 直有習慣將液化氣體供應鋼瓶櫃301和處理裝置3〇2放在 相同的空調區域,以避免在管道中的局部低溫區段及在空 調狀況下的變化之影響。圖6展示一個其中鋼瓶櫃3〇1係 確實地和處理裝置302放置在相同房間(無塵室3〇〇)的實施 例,且圖7展示一個實施例,其中鋼瓶櫃3 〇丨係幾乎直接 放置在處理裝置302下,該處理裝置302係在稱作充氣部 的層3 04上,該充氣部係在處理裝置302放置之無塵室層 3〇3的下層區域。格子層係置於無塵室層3〇3和充氣部層 3〇4之間,使空調的空氣從該層的上面往下流,且因此鋼瓶 櫃301和處理裝置3〇2係實際上置於相同的空調區域。 ❿此外,如同避免液化液體在供應管道系統中再液化的 方法’已提出了如圖8(A)和(B)所示的液化氣體供應裝置。 也就是說,在圖8(A)裡,使用加熱裝置加熱材料氣體供應 b道105至高於氣體的汽化溫度。因為管道路線被加熱至 内於該液化氣體的汽化溫度,所以避免了供應至液化材料 氣體供應管道105之液化氣體的再液化。在此結構中,1〇1 係貝/瓜控制器。丨02係偵測液化材料氣體溫度的溫度感測 器。1〇3係溫度控制回路,1〇4係使材料氣體供應系統管道 加熱的加熱器,且1〇5係液化材料氣體的供應管道❶1〇6係 200928172 處理室且1〇7係液化材料氣體的儲存鋼瓶。在圖8(b)中, 藉由從經液化材料氣體的儲存鋼瓶1〇7到質流控制器ι〇ι, 以及從質流控制器ΗΠ到處理室1Q6,以熱隔絕覆蓋材料 覆蓋液化材料氣體之供應管道1〇5的表面全部範圍以避 免來自周圍環境的影響,而抑制液化材料氣體的再液化。 如上面所述,藉由在液化材料氣體供應系統的管道上施用 熱隔絕覆蓋材料108,並使液化材料氣體(例如,見專利文 件1)穩定供應,要實現穩定的膜形成和圖案蝕刻係可能的。 此外,因為許多具有例如毒性、可燃性、和腐蝕性之 性質的危險氣體係被使用作為在例如半導體生產製程設備 中的液化氣體’替換它們的容器之工作時常涉及風險。為 了此原因,希望的是將涉及替換容器的鋼瓶櫃集中在一個 吃些鋼瓶櫃專用的房間中,其係和一般工作者工作的房間 分隔開的,且由於安全的關係,限制該房間只讓被批准的 人員進入。事實上’如目9所示,供應大部分氣體的鋼瓶 櫃301集中在房間306,以及通常使用從該房間透過管道 3〇7將材料供應至處理裝置302的方法。再者,至於像是矽 烷氣體之爆炸性氣體係從供應的液化氣體專用之具有強化 的女全性的分隔開的建築物透過管道供應至在生產處理建 築物裡的生產處理裝置》 .200928172 IX. INSTRUCTIONS OF THE INVENTION: TECHNICAL FIELD The present invention relates to a liquefied gas supply device and a supply method, and more particularly to a liquefied gas supply for providing a low vapor pressure special material gas and various process gases for semiconductor production. The apparatus and the supply method, wherein the gas systems are represented by, for example, HF, CLF3, BCLs, SiH2CL2, and WF6. [Technical Background] ϋ W [Prior Art] Low vapor pressure liquefied gas systems typified by HF, CLF3, BCL3, SiH2CL2, and WF6 are often used as special material gases and various processing gases in semiconductor manufacturing processes and various other processes. . These low vapor pressure liquefied gases are generally filled with a high pressure gas container (hereinafter referred to as a "container") in a liquid state, and are delivered to, for example, a device or a variety of other processing equipment of a semiconductor production plant that consumes the liquefied gas. In these cases, a semiconductor manufacturing plant and a variety of other processing devices (hereinafter referred to as "processing devices" for liquefied gas consumption are not in a liquid state, but receive liquefied gases in a gaseous state and use them in a gaseous state. At this time, the container filled with the liquefied gas is installed in a gas supply device called a steel bottle, and the gas system is vaporized in the container into a gaseous state and transmitted through a pipe connected to the processing device. In such a device, the only energy used to feed the vaporized liquefied gas in the vessel to the processing unit is pressure energy, which is the vapor pressure of the liquefied gas cartridge' and typically does not require the use of external energy such as a pump. For this reason, in the low vapor pressure liquefied gas supply system, since the liquefied gas itself is vaporized, the gas system is very low, so the gas system is fed into the pipeline in a state close to the saturated vapor state with little pressure reduction. Therefore, there has been a technical problem of turning a liquefied gas into a liquid in a pipe due to the presence of a local low temperature section of the supply pipe and effects such as seasonal variations and changes in air conditioning conditions. In the conventional liquefied gas supply system, as shown in Figs. 6 and 7, it has been customary to place the liquefied gas supply cylinder cabinet 301 and the processing apparatus 3〇2 in the same air conditioning area to avoid local low temperature zones in the pipeline. The impact of the segment and changes in air conditioning conditions. Figure 6 shows an embodiment in which the cylinder cabinet 3〇1 is securely placed in the same room as the treatment unit 302 (clean room 3〇〇), and Figure 7 shows an embodiment in which the cylinder cabinet 3 is almost straightforward Placed under processing device 302, which is attached to layer 408, referred to as an inflator, is in the underlying region of clean chamber layer 3〇3 where processing device 302 is placed. The grid layer is placed between the clean room layer 3〇3 and the inflator layer 3〇4, so that the air of the air conditioner flows downward from the top of the layer, and thus the cylinder cabinet 301 and the processing device 3〇2 are actually placed The same air conditioning area. Further, as a method of avoiding liquefaction of the liquefied liquid in the supply piping system, a liquefied gas supply device as shown in Figs. 8(A) and (B) has been proposed. That is, in Fig. 8(A), the heating means is used to heat the material gas supply b-channel 105 to a vaporization temperature higher than the gas. Since the pipe route is heated to the vaporization temperature of the liquefied gas, reliquefaction of the liquefied gas supplied to the liquefied material gas supply pipe 105 is avoided. In this configuration, a 1〇1 system/melon controller.丨02 is a temperature sensor that detects the temperature of the liquefied material gas. 1〇3 series temperature control circuit, 1〇4 series heater for material gas supply system pipe heating, and 1〇5 system for supplying liquefied material gas ❶1〇6 system 200928172 processing chamber and 1〇7 system liquefied material gas Store the cylinders. In Fig. 8(b), the liquefied material is covered with a heat insulating covering material from the storage cylinder 1经7 of the liquefied material gas to the mass flow controller ι〇ι, and from the mass flow controller to the processing chamber 1Q6. The entire surface of the gas supply pipe 1〇5 is protected from the influence of the surrounding environment, and the reliquefaction of the liquefied material gas is suppressed. As described above, by applying the heat insulating covering material 108 on the piping of the liquefied material gas supply system and stably supplying the liquefied material gas (for example, see Patent Document 1), it is possible to achieve stable film formation and pattern etching. of. In addition, because many hazardous gas systems having properties such as toxicity, flammability, and corrosivity are used as work for replacing their containers in liquefied gases such as semiconductor manufacturing process equipment, risks are often involved. For this reason, it is desirable to concentrate the cylinder cabinets involved in the replacement of containers in a room dedicated to some steel cabinets, which is separated from the room where the general worker works, and because of the safety relationship, the room is limited only Let the approved personnel enter. In fact, as shown in item 9, the cylinders 301 supplying most of the gas are concentrated in the room 306, and a method of supplying materials to the processing device 302 through the pipes 3〇7 from the room is generally used. Furthermore, as for the explosive gas system such as decane gas, the condensed gas system for the liquefied gas supplied is supplied through the pipeline to the production processing device in the production and processing building.

[專利文件1]曰本公開之未經審查申請案1998·ΐ2556 β 【發明内容】 [發明之揭露] [本發明所欲解決的問題] 8 200928172 然而,已檢查出下面的問題可能發生在上面所述的液 化氣體供應裝置中。 (i)低蒸氣壓液化氣體供應裝置之安裝位置環境的限制 在如圖6和7所示的液化氣體供應裝置中,因為液化 氣體的蒸氣壓太低的關係,造成在透過管道以氣態傳送液 化氣體時壓力的損失,所以無法以足夠的壓力將液化氣體 供應至處理裝置302,且一直有產生流速穩定度的問題。因 為此原因,除了將鋼瓶櫃301與處理裝置302相鄰放置, ❹ 已沒有其他的選擇,且透過如同其他氣體獨立於生產製程 3 02的長距離管道,自專用氣體供應區域供應液化氣體一直 是有困難的來。目前,除了將其放置在處理裝置3〇2的放 置處之外,沒有其他替代方案,且從製程工作者安全性的 觀點’和設備效用的管理來看,一直有改善的需求。 (11)因為在液化氣體供應管道中液化氣體的再液化,供 應不穩定 φ 在例如生產製程的設備中所使用的液化氣體供應裝置 裡,合意的是將鋼瓶櫃放置在和處理裝置不同的房間,但 因為液化氣體供應管道必須跨越不同的房間,管道會經過 不同環境溫度的區域,將整個管道維持在適當程度的溫度 而避免液化氣體的再液化係困難的。當液化氣體在液化氣 體供應管道中被再液化時,經再液化的液化氣體會完全或 部分地阻塞管道,導致液化氣體之供應壓力變的不穩定, 且因為生產製程環境不穩定,導致生產力的降低(在半導體 製程中生產㈣降低),特別是對於低蒸氣壓的液化氣體, 9 200928172 很難確保開始的供應壓力且甚至更難避免在供應管道中的 再液化’且在像是圖8(A)所示之使用熱隔絕管道的液化氣 體供應裝置中,安裝熱隔絕管道和消除不一致之隔絕的工 作量成為問題’且在如圖8(B)所示之使用經加熱管道的液 化氣體供應裝置中,伴隨著在高溫加熱之管道安裝的能量 負載增加和其對周圍操作環境的影響成為問題。 (ill)因為在供應管道中材料再液化造成的管道腐蝕 很多用在像是半導體生產製程設備中的液化氣體係腐 蝕f生物質,且當在供應管道中的液化氣體再液化時可能發 生下面的問題。 (iii-Ι)因為管道腐蚀而降低製程產率 由於在管道中的腐蝕所產生的腐蝕產物會隨氣態的液 化氣體傳送而造成污染,例如,在半導體生產製程中,在 處理至和日日圓的金屬污染不純物,而導致有缺陷的半導體 產物且因而降低生產率。 (iii-2)因為腐蝕產物導致管道設備故障 隨著傳送的腐蝕產物會導致像是在液化氣體供應管道 中閥和質流控制器之組成發生故障,且因為每次當這些故 障發生時,替換管道元件的工作所引起的裝置運轉時間減 少’導致生產製程的生產力降低。 (iii-3)因為腐姑造成之管道嚴重惡化引起的管道壽命 縮短 若管道被腐蝕,管道壁的厚度會減少。再者,腐蝕不 僅是均勻地進行,且也局部地在穿孔腐蝕。考慮到這些各 10 200928172 種形式的腐蝕,管道壽命有可能女士山 ,j舵大大地被縮短,且這些經 内部處理之昂貴管道有效蠢合 只e双哥命的縮紐,特別是在半導體製 程中,在生產成本上會是相當可觀的負擔。 (w)因為不足㈣力供應造成在液化氣體供應流速上 的限制 在將液化氣體氣化且將其以氣相饋至製程中的液化氣 體供應系統裡’當供應管道變得很長時,因為管道阻力引 起的能量損失,要以足夠的壓力饋入液化氣體是不可能[Patent Document 1] The unexamined application of the present disclosure 1998 ΐ 2556 β [Summary of the Invention] [Explanation of the Invention] [Problems to be Solved by the Invention] 8 200928172 However, it has been checked that the following problem may occur on the above The liquefied gas supply device. (i) Limitation of the installation position of the low vapor pressure liquefied gas supply device In the liquefied gas supply device shown in Figs. 6 and 7, since the vapor pressure of the liquefied gas is too low, the liquefaction is carried out in a gaseous state through the through-pipe. The loss of pressure at the time of gas does not allow the liquefied gas to be supplied to the treatment device 302 with sufficient pressure, and there is always a problem of generating flow rate stability. For this reason, in addition to placing the cylinder cabinet 301 adjacent to the processing unit 302, there is no other option, and the liquefied gas supplied from the dedicated gas supply area is always transmitted through a long-distance pipeline as the other gases are independent of the production process 302. Have trouble coming. At present, there is no alternative to placing it in the placement of the processing device 3〇2, and there is an increasing demand from the viewpoint of the safety of the process worker and the management of the device utility. (11) Since the liquefied gas is reliquefied in the liquefied gas supply pipe, the supply is unstable. In a liquefied gas supply device used in, for example, a production process, it is desirable to place the cylinder cabinet in a room different from the processing device. However, because the liquefied gas supply pipe must cross different rooms, the pipe will pass through different ambient temperature areas, and it is difficult to maintain the entire pipe at an appropriate temperature to avoid reliquefaction of the liquefied gas. When the liquefied gas is reliquefied in the liquefied gas supply line, the reliquefied liquefied gas may completely or partially block the pipe, resulting in unstable supply pressure of the liquefied gas, and productivity due to unstable production process environment. Reduction (production in the semiconductor process (4) reduction), especially for low vapor pressure liquefied gases, 9 200928172 It is difficult to ensure the initial supply pressure and even more difficult to avoid reliquefaction in the supply pipeline 'and in Figure 8 ( In the liquefied gas supply device using the heat-insulating pipe shown in A), the work of installing the heat-insulating pipe and eliminating the inconsistent isolation becomes a problem 'and the liquefied gas supply using the heated pipe as shown in Fig. 8(B) In the device, an increase in the energy load installed along the pipe heated at a high temperature and its influence on the surrounding operating environment become a problem. (ill) Because of the corrosion of the pipe caused by the reliquefaction of the material in the supply pipe, many of the liquefied gas systems used in semiconductor manufacturing process equipment corrode the biomass, and when the liquefied gas in the supply pipe is reliquefied, the following may occur. problem. (iii-Ι) Reduced process yield due to corrosion of the pipeline. Corrosion products generated by corrosion in the pipeline may be contaminated by the transport of gaseous liquefied gases, for example, in semiconductor manufacturing processes, during processing to and from the Japanese yen. Metals contaminate impurities, resulting in defective semiconductor products and thus reduced productivity. (iii-2) Failure of the piping equipment due to corrosion products, as the corrosion products conveyed may cause failure of the components of the valve and mass flow controller as in the liquefied gas supply piping, and because each time these failures occur, replacement The reduced run time of the device caused by the operation of the pipe components 'causes the productivity of the production process to decrease. (iii-3) Shortened pipe life due to severe deterioration of the pipeline caused by the rot. If the pipe is corroded, the thickness of the pipe wall will decrease. Furthermore, the corrosion does not only proceed uniformly, but also locally in the perforation. Considering the corrosion of these 10 200928172 forms, the pipeline life is likely to be Ms. Yamaha, the j-rudder is greatly shortened, and these expensive internal pipes are effectively stupid, only in the semiconductor process. In terms of production costs, it will be a considerable burden. (w) Limitation of the flow rate of the liquefied gas supply due to insufficient (four) force supply in the liquefied gas supply system that vaporizes the liquefied gas and feeds it into the process in the gas phase' when the supply pipe becomes very long, because It is impossible to feed the liquefied gas with sufficient pressure due to the energy loss caused by the resistance of the pipeline.

的。因此’-直有無法以製程所欲之流速饋人液化氣體的 問題。當從一個鋼瓶櫃將氣體供應分支至多個處理裝置 時’此問題變成更嚴重的阻礙因素。所以,在液化氣體流 速成為關鍵性因素的處理裝置中,有需要對每一個處理裝 置準備-個鋼瓶櫃,且因此對那個部份的設備成本 增加。 (v)安全性問題 φ 在如圖9所示之生產處理裝置中,雖然可以確保到某 個安全程度,但因為氣體具有低蒸氣壓的事實,以低蒸氣 壓液化氣體鋼瓶榧很難使用長範圍的管道來供應氣體,、且 在如圖6和7中所示的液化氣競供應系統中,因為氣體在 飽和蒸氣狀態供應的事實,該氣體傾向於在管道中再液 化,所以鋼瓶櫃係和處理裝置放置在相同的區域,該區域 係一般工作者出現的環境,而無法顧慮到安全性上的缺 點。主要的工作在於如何確保在處理這樣危險之帶有毒 性、可燃性、腐蝕性之低蒸氣壓液化氣體的足夠安全性等 11 200928172 級。 本發明的目 、、 的任於徒供一種液化氣體供應裝置與供應 、、其可避免在官道中以氣相供應之低蒸氣壓液化氣體 、、 以奋易操作與緊密的組成來穩定地供應所欲的 流速。此目的孫氣 馬了即使在使用例如半導體特殊材料氣體 各種處理氣體之高度危險和腐飿的氣體時,提供一種液 化氣體供應裝詈条口徂虛+^ 供應方法’其使所欲流速的穩定供應成 為可能。 ❹of. Therefore, there is a problem that it is impossible to feed a liquefied gas at a flow rate desired by the process. This problem becomes a more serious obstacle when branching the gas supply from a steel cabinet to multiple processing units. Therefore, in a processing apparatus in which the liquefied gas flow rate becomes a critical factor, it is necessary to prepare a steel cylinder cabinet for each processing apparatus, and thus the equipment cost for that portion is increased. (v) Safety problem φ In the production processing apparatus shown in Fig. 9, although it is possible to ensure a certain degree of safety, because of the fact that the gas has a low vapor pressure, it is difficult to use a low vapor pressure liquefied gas cylinder. Range of pipes to supply gas, and in the liquefied gas competition system as shown in Figures 6 and 7, because of the fact that the gas is supplied in a saturated vapor state, the gas tends to reliquefy in the pipe, so the cylinder system It is placed in the same area as the processing device, which is the environment in which the general worker appears, and cannot be concerned about the disadvantages of safety. The main task is to ensure that the safety of such a dangerously toxic, flammable, corrosive, low vapor pressure liquefied gas is handled in the order of 200928172. The object of the present invention is to provide a liquefied gas supply device and supply, which can avoid the low vapor pressure liquefied gas supplied in the gas phase in the official passage, and stably supply the liquefied gas and the tight composition. The desired flow rate. This purpose is to provide a liquefied gas supply device with a high degree of danger and a corrosive gas, such as a semiconductor special material gas, to provide a stable flow rate. Supply is possible. ❹

[解決問題的手段] 、、=發明的發明者在累積了專門的研究之後達到本發明 、成就藉由如下所描述的液化氣體供應裝置和供應方法 來實現前述的目標。 本發明係一種液化氣體供應裝置,其特徵在於含有一 /、有填充有液化氣體之容器的一次液化氣體供應設備、氣 化絰填充之液化氣體的一次汽化工具、測量在上述容器中 液化軋體之液相溫度To的工具,以及控制在上述容器中液 化氣體之液相溫度τ〇的工具, 具有以氣態供應上述液化氣體之一次管道的一次管道 系統,以及測量在包含該一次管道之管道系統内二 度的工具, 見'風 具有將以氣相供應之液化氣體再液化之再液化工具的 -次液化氣體供應設備、以液態儲存該液化氣體的儲存工 具、用來再氣化以液相儲存之液化氣體的二次汽化工具、 測里在上述再液化工具中液化溫度Tc的工具、測量在上述 12 200928172 儲存工具中儲存溫度Ts的工具、測量在上述二次汽化工具 中液相之液化氣體溫度Tg的工具、以及控制上述液化溫度[Means for Solving the Problem] The inventors of the invention reached the present invention after accumulating specialized research, and achieved the aforementioned object by the liquefied gas supply device and the supply method described below. The present invention relates to a liquefied gas supply device characterized by comprising a primary liquefied gas supply device having a container filled with a liquefied gas, a primary vaporization tool for vaporizing the liquefied gas filled with helium, and measuring the liquefied rolling body in the container a tool for the liquidus temperature To, and a tool for controlling the liquidus temperature τ〇 of the liquefied gas in the above container, a primary piping system having a primary conduit for supplying the liquefied gas in a gaseous state, and measuring a piping system including the primary conduit For the second-degree tool, see 'The wind has a reliquefaction tool that reliquefies the liquefied gas supplied in the gas phase - a secondary liquefied gas supply device, a storage tool that stores the liquefied gas in a liquid state, and is used for regasification to a liquid phase. a secondary vaporization tool for storing the liquefied gas, a tool for measuring the liquefaction temperature Tc in the reliquefaction tool, a tool for measuring the temperature Ts stored in the above-mentioned 12 200928172 storage tool, and measuring the liquid phase liquefaction in the above secondary vaporization tool a tool for gas temperature Tg, and controlling the liquefaction temperature described above

Tc、上述儲存溫度Ts和上述液相之液化氣體溫度Tg的工 具, 以及具有以氣態供應上述液化氣體至氣體消耗設備之 二次管道的二次管道系統,和測量在包括該二次管道之管 道系統内部周圍溫度Tb的工具。 ❸ 此液化氣體供應裝置’其中液化氣體係從上述容器透 過管道以氣態供應至和該裝置分隔開的氣體消耗設備,其 特徵亦在於,將上述液相之液化氣體溫度T〇控制在低於周 圍溫度Ta的最低溫度,將上述液化溫度Te或此與上述儲 存溫度Ts控制在低於液相的液化氣體溫度τ〇、以及將上述 液相的液化氣體溫度Tg控制在低於周圍溫度Tb的最低溫 度。 此外’本發明係一種液化氣體供應裝置,其特徵在於 φ 在將填充於容器中氣化之液化氣體供應至分離的氣體消耗 設備的液化氣體供應方法中具有: (1) 將填充在上述容器之液化氣體一次氣化的製程, (2) 將經氣化的液化氣體透過一次管道系統一次供應的 製程, (3) 將該以氣相供應之液化氣體再液化的製程, (4) 該再液化之液化氣體以液相儲存的製程, (5) 將該液態之液化氣體二次氣化的製程, (6) 透過二次管道系統將氣化的液化氣體二次供應至氣 13 200928172 體消耗設備的製程,以及 (7)以儲存於製程中之液化氣體補充用於製程(5)之 液態液化氣體的製程, 且同時其特徵在於: 控制在上述製程(〗)中的液相液化氣體溫度使其低於在 上述製程(2)之一次管道系統的最低溫度, 控制在上述製程(3)的液化溫度或此液化溫度與在上述 製程(4)的儲存溫度使其低於在上述製程(1)的液相液化氣體 溫度,以及 控制在上述製程(5)的液相液化氣體溫度使其低於在上 述製程(6)之二次管道系統的最低溫度。 在液化氣體供應裝置中,例如像是半導體生產製程 中,液化氣體的穩定供應是需要的,且當使用低蒸氣壓液 化氣體時,像是在氣體流徑中再液化和壓力損失的問題尚 未在習知的液化氣體供應裝置中被有效的處理。考慮到這 二問題本發明已藉由在作為氣體消耗設施之處理裝置附 近強制使所供應之氣化液化氣體液化後,使其再氣化,且 接著將其以氣態饋送至處理裝置中,使得提供即使當使用 低蒸氣壓液化氣體時,避免在氣體供應管道(一次和二次管 道)中的再液化與確保從填充有液化氣體之容器(之後稱為 “填充容器”)到處理裝置的氣相供應壓力之液化氣體供應裝 置和供應方法變成可能。 也就是說,藉由使液化氣體進行3階段的處理—在一次 汽化工具中的加熱製程、在再液化工具中的低溫製程、以 200928172 及在二次汽化工具中的加熱製程,使避免再液化且確保因 為處理能量不同之氣體供應壓力變成可能的。此外,藉由 下面方法使得即使在被填充容器的安裝條件和處理裝置限 制的溫度條件下,避免在氣體供應管道中再液化和確保氣 體供應壓力變成可能的:設定在一次汽化工具中的加熱溫 度、設定在一次汽化工具和再液化工具間的溫度差、和設 定在二次加熱工具的加熱溫度,其係相當於該目標液化氣 體的沸點(即液化氣體蒸氣壓)。 對於避免在液化氣體供應裝置和供應方法中的再液化 和確保氣體供應壓力’ 一次汽化工具、一次管道(管道系 統)、再液化工具、二次汽化工具、和二次管道(管道系統) 的溫度控制也是重要的。本發明使得即使當供應低蒸氣壓 液化氣體(相當於目標液化氣體的沸點)時,在氣體供應管道 中再液化的避免和確保氣體供應壓力成為可能的,其係藉 由以上述3階段製程為基礎,使用在如下者間的關係控制 溫度:(a)—次汽化工具和一次管道、(b) 一次汽化工具和再 液化工具(储存工具)、以及(c)二次汽化工具和二次管道。亦 即’主要從避免在氣體供應管道中再液化的觀點來看,(a) 控制在一次汽化工具中液相液化氣體(之後稱為“一次液相 溫度,’)低於一次管道系統的最低溫度,以及(c)控制在二次 汽化工具中液相液化氣體(之後稱為“二次液相溫度,,)低於 二次管道系統的最低溫度;和主要從確保氣體供應壓力的 觀點來看’(b)控制在再液化工具中的液化溫度低於一次液 相溫度,或同時控制儲存溫度低於一次液相溫度。 15 200928172 此處,在說明於上的液化氣體供應方法中的上述製程〇) 裡,合意的是具有下列功能; (1-1)在液化氣體以氣態供應之前,以冷卻源冷卻上述 容器,且控制液相液化氣體的溫度使其低於正常的控制溫 度,且在同時低於一次管道系統的最低溫度和環境溫度, (1-2)從上述容器開始以氣態供應液化氣體,以及 (1-3)加熱已被冷卻的液相液化氣體,其係藉由將該液 相液化氣體以氣態與加熱源一起供應且控制其在於正常控 ◎制溫度。 ' 在填充容器中之液化氣體的蒸氣壓係在初始設定之環 境溫度的飽和蒸氣壓。同時,在液化氣體供應裝置裡,當 液化氣體的氣體供應開始,因為伴隨著液相汽化的汽化 熱’液體的溫度開始變低《因此,在這些條件下,當以氣 態供應液化氣體時,有需要避免在氣體供應管道中的再液 化和確保亂體供應壓力。在本發明中,填充容器首先在供 〇 應液化氣體前,以冷卻源冷卻,使液相液化氣體的溫度低 於正常控制溫度、低於一次管道系統的最低溫度、以及低 於環境溫度,以確保即使當一次管道系統的最低溫度低於 環境溫度時,避免在氣體供應管道中的再液化,以及藉由 隨後提高溫度並適度的控制溫度來確保氣體的供應壓力。 本發明係如上所述的液化氣體供應裝置,其特徵在於 上述的二次液化氣體供應設備具有再液化工具,至少2個 作用為儲存工具和二次汽化工具的組成零件,以及允許這 些工具獨立執行且同時可從一個工具轉換到另一個的功 200928172 能。 本發明係如上所述的液化氣體供應裝置,其特徵在於 具有至少2個允許進行上述製程(3)到(5)之處理系統,在至 少一個該處理系統中進行由上述製程(3)和(4)所組成的再 液化儲存模式,在至少一個其他處理系統中,進行含有上 述製程(5)的再汽化模式,以及在這些結合的該製程步驟維 持一段預定的時間後,在交替地轉換這些製程系統的同a tool for Tc, the above-described storage temperature Ts and the liquid phase liquefied gas temperature Tg, and a secondary piping system having a secondary pipe for supplying the liquefied gas to the gas consuming device in a gaseous state, and measuring the pipe including the secondary pipe A tool for the ambient temperature Tb inside the system. ❸ the liquefied gas supply device 'in which the liquefied gas system is supplied from the above-mentioned container through the pipe to the gas consuming device separated from the device in a gaseous state, and is characterized in that the liquefied gas temperature T 上述 of the liquid phase is controlled to be lower than The lowest temperature of the ambient temperature Ta, the liquefaction temperature Te or the storage temperature Ts is controlled to be lower than the liquefied gas temperature τ〇 of the liquid phase, and the liquefied gas temperature Tg of the liquid phase is controlled to be lower than the ambient temperature Tb. lowest temperature. Further, the present invention is a liquefied gas supply device characterized in that φ is supplied to a liquefied gas supply method for supplying a liquefied gas vaporized in a vessel to a separate gas consuming apparatus: (1) to be filled in the above-mentioned container a process for liquefied gas gasification once, (2) a process of supplying a gasified liquefied gas through a primary pipe system, (3) a process of reliquefying the liquefied gas supplied in a gas phase, (4) the reliquefaction a process in which a liquefied gas is stored in a liquid phase, (5) a process of secondary gasification of the liquid liquefied gas, and (6) secondary supply of the vaporized liquefied gas to the gas through a secondary piping system. And (7) a process for replenishing the liquid liquefied gas used in the process (5) with the liquefied gas stored in the process, and at the same time characterized by: controlling the temperature of the liquid liquefied gas in the process (〗) It is lower than the lowest temperature of the piping system in the above process (2), and is controlled at the liquefaction temperature of the above process (3) or the liquefaction temperature and the storage temperature in the above process (4). Below it is lower than the minimum temperature of the secondary conduit system in the above process (6) of the above process (1) the liquidus temperature of the liquefied gas, liquefied gas and liquid temperature control in the above process (5). In a liquefied gas supply device, such as, for example, a semiconductor manufacturing process, a stable supply of liquefied gas is required, and when a low vapor pressure liquefied gas is used, problems such as reliquefaction and pressure loss in the gas flow path have not been The conventional liquefied gas supply device is effectively processed. In view of these two problems, the present invention has re-vaporized the supplied vaporized liquefied gas by liquefying it in the vicinity of the treatment device as a gas consuming facility, and then feeds it into the treatment device in a gaseous state, so that Providing re-liquefaction in gas supply pipes (primary and secondary pipes) and ensuring gas from a vessel filled with liquefied gas (hereinafter referred to as "filling vessel") to the treatment device even when a low vapor pressure liquefied gas is used The liquefied gas supply device and the supply method of the phase supply pressure become possible. That is, re-liquefaction is avoided by performing a three-stage treatment of the liquefied gas - a heating process in a primary vaporization tool, a low temperature process in a reliquefaction tool, a heating process in 200928172, and a secondary vaporization tool. And it is ensured that gas supply pressures due to different processing energies become possible. Further, by the following method, it is possible to avoid reliquefaction in the gas supply pipe and ensure the gas supply pressure even under the temperature conditions limited by the installation conditions of the filled container and the processing means: the heating temperature set in the primary vaporization tool The temperature difference between the primary vaporization tool and the reliquefaction tool and the heating temperature set in the secondary heating tool correspond to the boiling point of the target liquefied gas (ie, the vapor pressure of the liquefied gas). For avoiding reliquefaction in liquefied gas supply and supply methods and ensuring gas supply pressure's temperature of primary vaporization tool, primary pipe (pipe system), reliquefaction tool, secondary vaporization tool, and secondary pipe (pipe system) Control is also important. The present invention makes it possible to avoid and ensure the gas supply pressure in the gas supply pipe even when the low vapor pressure liquefied gas (corresponding to the boiling point of the target liquefied gas) is supplied, by using the above 3-stage process Foundation, using a relationship between the following to control temperature: (a) - secondary vaporization tool and primary pipe, (b) primary vaporization tool and reliquefaction tool (storage tool), and (c) secondary vaporization tool and secondary pipe . That is, 'mainly from the viewpoint of avoiding reliquefaction in the gas supply pipe, (a) controlling the liquid phase liquefied gas in a primary vaporization tool (hereinafter referred to as "primary liquidus temperature,") is lower than the minimum of the primary piping system. Temperature, and (c) controlling the liquid phase liquefied gas in the secondary vaporization tool (hereinafter referred to as "secondary liquidus temperature,") lower than the minimum temperature of the secondary piping system; and mainly from the viewpoint of ensuring gas supply pressure See '(b) Controlling the liquefaction temperature in the reliquefaction tool below the primary liquidus temperature, or simultaneously controlling the storage temperature below the primary liquidus temperature. 15 200928172 Here, in the above-described process 〇) in the liquefied gas supply method described above, it is desirable to have the following functions; (1-1) cooling the above-mentioned container with a cooling source before the liquefied gas is supplied in a gaseous state, and Controlling the temperature of the liquid phase liquefied gas to be lower than the normal control temperature, and simultaneously lower than the minimum temperature and ambient temperature of the primary piping system, (1-2) supplying the liquefied gas in a gaseous state from the above container, and (1) 3) Heating the liquid phase liquefied gas which has been cooled by supplying the liquid phase liquefied gas in a gaseous state together with the heat source and controlling it at a normal temperature. The vapor pressure of the liquefied gas in the packed vessel is the saturated vapor pressure at the initially set ambient temperature. Meanwhile, in the liquefied gas supply device, when the gas supply of the liquefied gas starts, since the temperature of the vaporization heat accompanying the liquid phase vaporization starts to become low, "under these conditions, when the liquefied gas is supplied in a gaseous state, there is It is necessary to avoid reliquefaction in the gas supply line and to ensure that the supply pressure is disordered. In the present invention, the filling container is first cooled by a cooling source before the liquefied gas is supplied, so that the temperature of the liquid liquefied gas is lower than the normal control temperature, lower than the lowest temperature of the primary piping system, and lower than the ambient temperature. It is ensured that the re-liquefaction in the gas supply line is avoided even when the minimum temperature of the primary piping system is lower than the ambient temperature, and the supply pressure of the gas is ensured by subsequently increasing the temperature and moderately controlling the temperature. The present invention is the liquefied gas supply device as described above, characterized in that the above secondary liquefied gas supply device has a reliquefaction tool, at least two components serving as a storage tool and a secondary vaporization tool, and allowing the tools to be independently executed And at the same time can be converted from one tool to another 200928172 can. The present invention is a liquefied gas supply apparatus as described above, characterized in that it has at least two processing systems which allow the above-described processes (3) to (5) to be carried out in at least one of the processing systems by the above processes (3) and 4) a reliquefaction storage mode consisting of performing a revaporization mode containing the above process (5) in at least one other processing system, and alternately converting these after the combined process steps are maintained for a predetermined period of time Process system

Ο 時,將液化氣體以氣態連續地供應至後來階段的氣體消耗 設備。 需要連續且穩定地 暫時會需要大體積 當在許多各種生產製程的情況中, 以乳態供應液化氣體,在一些情況裡, 的液化氣體。在像是低蒸氣壓液化氣體的情況裡,對於能 夠從填充容器透過單一個一次管道以氣態饋送之液化氣體 的體積有限制,且一直有如上所述之“因 為不足的供應壓力 造成之液化氣體供應流速的限制”的問題。使用本發明之液 化氣體供應裝i,已使回應緊急f求量成為可&,其_ 由持續地儲存指定量的液化氣體,其中該液化氣體係藉由 再液化工具在儲存工具中轉變成液相,且確保在儲存工且 中有指定量的液化氣體,其係藉由設H次再液化並 儲存從填充容器以氣態供應之液化氣體的處理系统,和二 次氣化該儲存之液化氣體的製程“,㈣在 體供應設備中係獨立的。 夜化軋 17 200928172 的連續汽化變成可能的,該些功能係獨立的且同時可交替 地轉換’使得當在後者中要被氣化的液化氣體量變少時, 液化氣體可藉由轉化至前者而氣化。因此,即使當使用低 蒸氣壓液化氣體時,提供可迅速依循所需液化氣體量改變 的液化氣體供應裝置係可能的。In the case of Ο, the liquefied gas is continuously supplied in a gaseous state to the gas consuming equipment of a later stage. It is necessary to continuously and stably temporarily require a large volume. In the case of many various production processes, a liquefied gas is supplied in a milky state, and in some cases, a liquefied gas. In the case of a low vapor pressure liquefied gas, there is a limit to the volume of liquefied gas that can be fed from the filling vessel through a single primary pipe in a gaseous state, and there has been a "liquefied gas due to insufficient supply pressure" as described above. The problem of the supply flow limit". The use of the liquefied gas supply device i of the present invention has made it possible to respond to an emergency, which continuously stores a specified amount of liquefied gas, wherein the liquefied gas system is converted into a storage tool by a reliquefaction tool. a liquid phase, and ensuring that a specified amount of liquefied gas is present in the storage unit by a treatment system that reliquefies H and recharges the liquefied gas supplied from the filling vessel in a gaseous state, and liquefies the secondary gasification of the storage. The process of the gas ", (4) is independent in the body supply equipment. Continuous vaporization of the night rolling 17 200928172 becomes possible, and these functions are independent and simultaneously alternately convertible 'to be vaporized in the latter When the amount of the liquefied gas becomes small, the liquefied gas can be vaporized by being converted to the former. Therefore, even when a low vapor pressure liquefied gas is used, it is possible to provide a liquefied gas supply device which can quickly follow the change in the amount of liquefied gas required.

G 本發明係如上所述的液化氣體供應裝置,其特徵在於 在構成該組成零件之工具任一者處於當前述組成零件從作 為再液化工具和儲存工具的功能轉換到作為再汽化工具的 功能或反之時可確保該功能的狀態時,將每個工具的控制 溫度預先轉換至上述每個功能的控制溫度。 再液化工具和儲存工具的功能和二次汽化工具的功能 係獨立地處理液化氣體,且如上所述,它們的溫度控制同 時扮演重要的角色。然而,當使這些功能交替地轉換時, 若相當容易的迅速轉換液化氣體處理功能,當氣相和液相 共存時,要確保在每個工具中的溫度迅速轉換係困難的。 藉由在由構成組成的工具在轉換這些功能時,成為功能可 被確保的狀態的時候,將每個工具的實際操作溫度預調整 至每個功能的控制溫度,本發明使確保快速轉換每個功能 且穩定地供應液化氣體變成可能的。 本發明係如上所述的液化氣體供應裝置,其特徵在於 具有一次汽化工具,其在上述二次液化氣體供應設備中供 應伴隨二次載體氣體的上述經儲存液相液化氣體。 在像是半導體製程的生產製程中,在有些情況中藉 由將處理a體與低濃度的液化氣冑或多龍型的液化氣體 200928172 摻合來使用要被供應的處理氣體。在這些情況中,也有些 情況裡合意的是不以純物質的方式供應液化氣體,而是藉 由使其伴隨著在二次汽化工具中的載體氣體。特別是當要 將在一次液化氣體供應設備中調整之處理氣體以氣態供應 至處理裝置時’考慮到要避免再液化和確保流速穩定度以 及供應之液化氣體在管道系統中的穩定度係困難的;因為 在許多情況中二次液化氣體供應設備係靠近處理裝置安 裝’且有安全性和對供應之液化氣體從上述之一次液化氣 體供應裝置到二次液化氣體供應設備的法定限制,所以符 合操作條件的製程氣體之多變供應係需要的,可能有效的 使用本發明極佳的功能,其允許在製備靠近處理裝置的液 相液化氣體以氣態至二次液化氣體供應設備,且提供進一 步高度易變的液化氣體供應裝置。 本發明係如上所述的液化氣體供應裝置,其特徵在於 以分支線路構成上述一次管道系統,使得多個上述二次液 化氣體供應設備可連接到上述一次液化氣體供應設備中的 一個’且允許同時供應來自上述一次液化氣體供應設備之 液化氣體至某些上述二次液化氣體供應設備。 因為包括半導體製程的各種生產製程係在各種條件下 操作,因此在有些情況裡,不只有各種不同的液化氣體供 應’而且它們的壓力條件也不同。在很多這樣的情況裡, 因為在一次管道系統中的改變可能是需要的,所以在液化 氣體供應裝置的一次供應設備中要對應這些差別是非常困 難的。使用本發明的液化氣體供應裝置,同時從一次液化 19 200928172 氣體供應設備供應液化氣體到多個二次液化氣體供應設備 係可能的,其係藉由使一次管道系統與分支線路組合且連 接多個二次液化氣體供應設備到一個一次液化氣體供應設 備,其中每個一次液化氣體供應設備、一次管道系統、二 次液化氣體供應設備、和二次管道系統係高度獨立地。也 可能的是可有效地使用本發明的技術效果,因為在所有一 次管道系統中的液化氣體可以氣態供應,其能夠避免在氣 體供應管道中的再液化且確保氣體供應壓力。G The present invention is a liquefied gas supply device as described above, characterized in that any one of the tools constituting the component parts is in a function of converting the aforementioned component parts from a function as a reliquefaction tool and a storage tool to a function as a re-evaporation tool or Conversely, when the state of the function is ensured, the control temperature of each tool is pre-converted to the control temperature of each of the above functions. The functions of the reliquefaction tool and the storage tool and the function of the secondary vaporization tool independently process the liquefied gas, and as described above, their temperature control plays an important role at the same time. However, when these functions are alternately switched, if the liquefied gas treatment function is relatively easily converted, it is difficult to ensure rapid temperature conversion in each tool when the gas phase and the liquid phase coexist. By pre-adjusting the actual operating temperature of each tool to the control temperature of each function when the functions consisting of the components are converted into functions, the present invention enables a fast conversion of each It is possible to supply liquefied gas functionally and stably. The present invention is directed to a liquefied gas supply apparatus as described above, characterized by comprising a primary vaporization tool for supplying said stored liquid liquefied gas accompanying a secondary carrier gas in said secondary liquefied gas supply apparatus. In a manufacturing process such as a semiconductor process, a process gas to be supplied is used in some cases by blending a process a body with a low concentration of liquefied gas or a multi-dragon type liquefied gas 200928172. In these cases, it is also desirable in some cases not to supply the liquefied gas in a pure material manner, but rather to accompany it with the carrier gas in the secondary vaporization tool. In particular, when the process gas adjusted in the primary liquefied gas supply device is to be supplied to the treatment device in a gaseous state, it is difficult to avoid reliquefaction and ensure the stability of the flow rate and the stability of the supplied liquefied gas in the piping system. Compliant operation because in many cases the secondary liquefied gas supply equipment is installed close to the treatment unit and has safety and legal restrictions on the supply of liquefied gas from the above-mentioned primary liquefied gas supply to the secondary liquefied gas supply The variable supply system of the process gas is required, and it is possible to effectively use the excellent function of the present invention, which allows the liquid phase liquefied gas near the processing device to be supplied to the secondary liquefied gas supply device in a gaseous state, and provides further high flexibility. A liquefied gas supply device. The present invention is the liquefied gas supply device as described above, characterized in that the primary piping system is constituted by a branch line such that a plurality of the above-described secondary liquefied gas supply devices can be connected to one of the above-mentioned primary liquefied gas supply devices and allows simultaneous The liquefied gas from the above-mentioned primary liquefied gas supply device is supplied to some of the above secondary liquefied gas supply devices. Since various manufacturing processes including semiconductor processes operate under various conditions, in some cases, not only a variety of different liquefied gas supplies are required, but also their pressure conditions are different. In many of these cases, it is very difficult to correspond to these differences in a primary supply of a liquefied gas supply because changes in a primary piping system may be required. By using the liquefied gas supply device of the present invention, it is possible to simultaneously supply liquefied gas from a single liquefaction 19 200928172 gas supply device to a plurality of secondary liquefied gas supply devices by combining and connecting a primary piping system with a branch line The secondary liquefied gas supply device is supplied to a primary liquefied gas supply device, wherein each of the primary liquefied gas supply devices, the primary piping system, the secondary liquefied gas supply device, and the secondary piping system are highly independent. It is also possible to effectively use the technical effect of the present invention because the liquefied gas in all the primary piping systems can be supplied in a gaseous state, which can avoid reliquefaction in the gas supply piping and ensure the gas supply pressure.

[本發明的效果] 如上所描述’使用本發明的液化氣體供應裝置和供應 方法,提供避免在氣體供應管道中的再液化且確保氣體供 應壓力的液化氣體供應裝置和供應方法已變成可能的。 【實施方式】 [實施本發明之最佳配置] 實施本發明的配置係以圖式描述於下。此處基本的配 置係從填充容器透過管道將液化氣體以氣態供應至分隔開 的氣體消耗設備, 次液化氣體供應設備、 、以及在填充容器中的 其係裝備有具有填充容器的一 一次汽化工具、液相溫度測量工具 溫度控制工具,[Effects of the Invention] As described above, using the liquefied gas supply device and the supply method of the present invention, it has become possible to provide a liquefied gas supply device and a supply method which avoid reliquefaction in the gas supply pipe and ensure the gas supply pressure. [Embodiment] [Best configuration for carrying out the invention] The configuration for carrying out the invention is described below in the drawings. The basic configuration here is to supply the liquefied gas in a gaseous state from the filling container through the pipe to the separated gas consuming device, the secondary liquefied gas supply device, and the system in the filling container are equipped once with the filling container. Vaporization tool, liquid temperature measurement tool temperature control tool,

具有一次管道和環境溫度測量工I 务的一次管道系統, 具 具 二次液化氣體供應設備,其具有再液化工具、儲存工A primary piping system with primary piping and ambient temperature measurement, with secondary liquefied gas supply equipment with reliquefaction tools and storage

二次汽化工具、液化溫度測量工I 丹、儲存溫度測量工 液相溫度測量工具、以及在二次、、与 ’飞化工具中的溫度控 20 200928172 制工具, 以及具有二次管道和環境溫度測量工具的二次管道系 統, 用來在即使當使用低蒸氣壓液化氣體時,避免在氣體 供應管道中的再液化和確保從填充容器到處理裝置的氣體 供應壓力’其係藉由控制在填充容器中的液相溫度使其低 於一次管道系統之環境溫度的最低溫度,控制液化溫度或 _ 液化溫度與儲存溫度使其低於在填充容器中的液相溫度, 以及控制在二次汽化工具中的液相溫度使其低於二次管道 系統的最低溫度。 &lt;本發明之液化氣體供應裝置基本組成的實施例&gt; 圖1係顯示本發明液化氣體供應裝置(之後稱為“本裝 置’’)之基本組成的實施例。其係由安裝在與為消耗設備的處 理裝置5設置在其中的室(此後稱作“無塵室3〇’’)分隔開的 專用液化氣體室(之後稱為“液化氣體供應室1〇,,)之一次液 &gt; 化供應設備1、和處理裝置相鄰設置的二次液化氣體供應設 備3、和上兩者連接之一次管道系統2、以及和二次液化氣 體供應設備3與處理裝置5連接之二次管道系統4所組 成。在圖1中,處理裝置5係設置在無塵室3〇中的無塵室 層30a上’且二次液化氣體供應設備3係設置在充氣部層 3〇b上。填充在一次液化氣體供應設備1之填充容器u中 的液化氣體係在一次汽化工具lb中氣化。氣態的液化氣體 係以氣態透過裝有一次管道2a的一次管道系統2饋送至二 次液化氣體供應設備3。以氣態饋送的液化氣體係藉由再液 21 200928172 化工具3a在二次液化氣體供應設備3 _再液化且然後以 液態儲存在儲存工具3b ^儲存的液化氣體在二次汽化工具 3 c被氣化。轉為氣態的液化氣體以氣態藉由二次管道系統4 被饋送至處理裝置5。來自處理裝置5的排氣(包括饋送的 液化氣體)係透過排氣處理裝置6排放。 因為安置和移除從液化氣體製造處所遞送之填充容器 la的工作係完全地且只有在液化氣體供應室中完成,可 ❹ 避免在無塵室5中將管道開啟至大氣的危險工作,其中該 無塵室5係一般操作員工作和處理裝置5放置的地方。因 此,從無塵室30完全隔開所有液化氣體,包括低蒸氣壓液 化氣體,係可能的(其慣例上係不可能的),且提供集中的供 應’大大地改善了安全性和工作效率。 [一次液化氣體供應設備1] 詳細而言’如圖2(A)所示之一次液化氣體供應設備1, 在其框殼lz内部放有填充有液態液化氣體的填充容器u, 鏐 且此框殼1z係配備内建的溫度控制系統(未顯示於圖 中)’其係由使在填充容器la中的液化氣體溫度降低至如一 二人/li化工具1 b之預設的溫度的冷卻區段1 c和在當液化氣髏 破氣化且供應時,補充損失的汽化熱,以使液化氣體溫度 不會低於預設的溫度加熱區段Id所組成,且該加熱區段 係。對於冷卻區段lc,若其可從填充容器U的底部、侧邊 或%境溫度(一般為10〜30°c)冷卻大約10。〇:係足夠的, 且其可能提供例如使用來自如圖2(A)所示之冷卻介質單元 6的冷卻介質作為冷卻源的方法。對於加熱區段Id,可能 22 200928172 的是提供使用例如用像是加熱空氣或燈作為熱源的方法來 加熱填充谷器1 a的底部或侧邊。此處’該設備亦配備有測 量在填充容器中液相液化氣體溫度To的工具(未顯示於圖 中)’以及控制在填充容器中液相液化氣體溫度T〇的工具 (未顯示於圖中)。 此外’本裝置和習知方法不同的另一特徵為,因為在 減溫狀態且維持飽和蒸汽壓饋送液化氣體的方法,所以在 &amp; 一次液化氣體供應設備1和氣體供應管道系統中,控制氣 體供應壓力的壓力調整閥並非必須的,以及使用二次液化 氣體供應設備3控制壓力是可行的;其中該壓力調整閥並 非必須的是因為在減溫狀態進料液化氣體且維持飽和蒸汽 壓的方法。在此一次液化氣體供應設備丨的框殼中,也可 能的是,如同習知方法般,加上沖洗氣(像是氮氣的惰性氣 體)通入管道和排放口管道以在裝置或移除填充容器u 夺冲洗連接到填充容器1和一次管道2a的部分,且與連 φ 接到一次管道2a的氣體供應管道系統分開。 此外,因為本裝置並無直接供應液化氣體至做為氣體 消耗設備的處理裝置5,且只是將其一次儲存在於二次液化 氣體供應設備3的儲存工具(儲存槽)3b,其僅需要在儲存於 儲存工具3b之氣體用完之前再填充,而不管液化氣體到處 理裴置5的供應模式。因此,不需要使供應與在處理裝置5 的消耗流速同步,且也不需要準備2個以氣態供應氣體的 容器以確保轉換它們時的連續供應,以及準# 1個系統就 足夠了。 23 200928172 因為所遞送的壓力容器也是填充容器la,且係在液化 氣體製造處與液化氣體供應裝置之間來回傳送的壓力容 器,很難直接在容器内部放置溫度感測器以測量液化氣體 的溫度。此處,藉由在出口管道處使用壓力感測器(未顯示 於圖中),並使用此壓力閥,來持績地監測氣化的液化氣體 之壓力,可從對液化氣體為獨一的“飽和蒸氣磨對溫度,,性質 來计算在填充容器la中液化氣體的液相溫度,且從迅速和 精確測量的角度來看,使用此方法係合意的。在本裝置中, 合意的是採取回饋控制方法以使此方法獲得的液相溫度維 持在預設的溫度。 因為餘留在填充容器la之液化氣體量的檢測一般係由 秤重元成’填充谷器la係架設在荷重元if上,且當餘留的 量變低時,替換填充容器1 a。 圖2(B)顯示在本裝置中一次液化氣體供應設備丄的變 化實施例。基本的組成和圖2(A)相同,但不同在於其具有 • 載體氣體導入區段lg和幾乎達到液相之液化氣體底層的載 體氣體導入管lh ’做為在填充容器la中以氣化液態之液化 氣體的方法。對於一次汽化工具lb,有可能除了在液相液 化氣體溫度下的蒸氣壓外,亦使用載體氣體’以強制的氣 體供應來改善乳體供應壓力。特別是當一次管道2a的距離 長及壓力損失大時,有可能藉由除了從在一次汽化工具lb 之蒸氣壓和在再液化工具3a之蒸氣壓之間的差異所獲得之 氣體供應壓力外’亦使用載體氣體調整強制氣體供應壓力 來補充壓力損失並調整液化氣體供應速率。亦有可能避免 24 200928172 因為汽化熱與氣泡引起的液相溫度 相溫度以供應高度穩定的液化氣體。再者,::裝: 气化後以氣態供應至處理裝置5的液化氣體量 ^卜’因為有可能設定往儲存工具3b之流速,所以即使在供 ==載體氣體稀釋的液化氣體時,有可能藉由增加稀 ㈣刀的C體供應速率,確保儲存氣體的需要量,且 地避免在一次管道2a中的再液化。Secondary vaporization tools, liquefaction temperature measurement I, storage temperature measurement, liquid phase temperature measurement tools, and temperature control 20, 200928172 tools in secondary, and 'flying tools', and with secondary piping and ambient temperature A secondary piping system for measuring tools for avoiding reliquefaction in the gas supply line and ensuring gas supply pressure from the filling vessel to the processing unit even when low vapor pressure liquefied gas is used. The liquidus temperature in the vessel is lower than the lowest temperature of the ambient temperature of the primary piping system, controlling the liquefaction temperature or liquefaction temperature and storage temperature to be lower than the liquidus temperature in the filling vessel, and controlling the secondary vaporization tool The liquidus temperature in the middle is lower than the lowest temperature of the secondary piping system. <Embodiment of Basic Composition of Liquefied Gas Supply Apparatus of the Present Invention> Fig. 1 is a view showing an embodiment of a basic composition of a liquefied gas supply apparatus (hereinafter referred to as "the present apparatus") of the present invention. The processing unit 5 of the consuming apparatus is provided with a dedicated liquefied gas chamber (hereinafter referred to as "liquefied gas supply chamber 1 〇,") separated by a chamber (hereinafter referred to as "clean room 3"'). a supply device 1, a secondary liquefied gas supply device 3 disposed adjacent to the processing device, a primary piping system 2 connected to the upper two, and a secondary conduit connected to the processing device 5 and the secondary liquefied gas supply device 3 The system 4 is composed of. In Fig. 1, the processing device 5 is disposed on the clean room layer 30a in the clean room 3, and the secondary liquefied gas supply device 3 is disposed on the inflator layer 3b. The liquefied gas system in the filling vessel u of the primary liquefied gas supply device 1 is vaporized in a primary vaporization tool lb. The gaseous liquefied gas system is fed in a gaseous state through a primary piping system 2 equipped with a primary conduit 2a to a secondary liquefied gas. Equipment 3. Gas-gas fed liquefied gas system by re-liquid 21 200928172 Chemical tool 3a in secondary liquefied gas supply equipment 3 _ reliquefied and then stored in liquid state in storage tool 3b ^ stored liquefied gas in secondary vaporization tool 3 c is gasified. The liquefied gas which is converted to a gaseous state is fed to the treatment device 5 in a gaseous state by the secondary piping system 4. The exhaust gas (including the fed liquefied gas) from the treatment device 5 is discharged through the exhaust treatment device 6 Since the operation of the filling container la delivered from the liquefied gas manufacturing station is completely and only completed in the liquefied gas supply chamber, the dangerous work of opening the pipe to the atmosphere in the clean room 5 can be avoided, wherein The clean room 5 is where the general operator operates and the treatment device 5 is placed. Therefore, it is possible to completely separate all liquefied gases, including low vapor pressure liquefied gases, from the clean room 30 (which is conventionally impossible) ), and providing a centralized supply 'greatly improved safety and work efficiency. [One liquefied gas supply equipment 1] In detail, the liquid shown in Figure 2 (A) The gas supply device 1 has a filling container u filled with a liquid liquefied gas inside the casing lz, and the casing 1z is equipped with a built-in temperature control system (not shown) The temperature of the liquefied gas in the filling vessel la is lowered to a cooling section 1 c such as a preset temperature of the two-person/li tool 1 b and the regenerative loss of vaporization heat when the liquefied gas is gassed and supplied, So that the liquefied gas temperature is not lower than the preset temperature heating section Id, and the heating section is. For the cooling section lc, if it can be from the bottom, side or % temperature of the filling container U ( It is generally 10 to 30 ° C) and is cooled by about 10. 〇: is sufficient, and it may provide, for example, a method of using a cooling medium from the cooling medium unit 6 as shown in Fig. 2(A) as a cooling source. For the heating section Id, it is possible 22 200928172 to provide a method for heating the bottom or sides of the filling tank 1 a using, for example, a method such as heating air or a lamp as a heat source. Here, the device is also equipped with a tool for measuring the liquid phase liquefied gas temperature To in the filling container (not shown) and a tool for controlling the liquid liquefied gas temperature T〇 in the filling container (not shown in the figure). ). Further, another feature that is different from the conventional method is that, in the desuperheating state and the method of maintaining the saturated vapor pressure to feed the liquefied gas, in the &amp; primary liquefied gas supply device 1 and the gas supply piping system, the control gas It is not necessary to supply a pressure regulating valve, and it is feasible to use a secondary liquefied gas supply device 3 to control the pressure; wherein the pressure regulating valve is not necessary because the liquefied gas is fed in a desuperheated state and the saturated vapor pressure is maintained. . In the frame of the liquefied gas supply device ,, it is also possible, as in the conventional method, to add a flushing gas (such as an inert gas such as nitrogen) into the pipe and the vent pipe to be installed in the device or to remove the filling. The container u is flushed to the portion of the filling container 1 and the primary pipe 2a, and is separated from the gas supply piping system in which the φ is connected to the primary pipe 2a. In addition, since the apparatus does not directly supply the liquefied gas to the processing apparatus 5 as the gas consuming apparatus, and only stores it once in the storage tool (storage tank) 3b of the secondary liquefied gas supply apparatus 3, it only needs to be stored. The filling is performed before the gas of the storage tool 3b is used up, regardless of the supply mode of the liquefied gas to the processing device 5. Therefore, it is not necessary to synchronize the supply with the consumption flow rate at the processing apparatus 5, and it is also unnecessary to prepare two containers for supplying gas in a gaseous state to ensure continuous supply when converting them, and a system of 1 is sufficient. 23 200928172 Since the pressure vessel delivered is also a pressure vessel that fills the vessel la and is transported back and forth between the liquefied gas manufacturing and the liquefied gas supply, it is difficult to directly place a temperature sensor inside the vessel to measure the temperature of the liquefied gas. . Here, by using a pressure sensor (not shown in the figure) at the outlet pipe, and using this pressure valve, the pressure of the vaporized liquefied gas can be monitored continuously, which is unique from the liquefied gas. "Saturated steam mill versus temperature, properties to calculate the liquidus temperature of the liquefied gas in the filling vessel la, and from a rapid and accurate measurement point of view, it is desirable to use this method. In the present device, it is desirable to take The feedback control method is such that the liquidus temperature obtained by the method is maintained at a preset temperature. Because the detection of the amount of liquefied gas remaining in the filling container la is generally carried out by the weighing element into a 'filled barrage', the load is carried on the load element if Above, and when the remaining amount becomes low, the filling container 1a is replaced. Fig. 2(B) shows a modified embodiment of the primary liquefied gas supply device 丄 in the apparatus. The basic composition is the same as Fig. 2(A), but The difference is that it has a carrier gas introduction section lg and a carrier gas introduction pipe lh which almost reaches the liquid phase liquefied gas bottom layer as a method of gasifying a liquid liquefied gas in the filling vessel 1a. Tool lb, it is possible to use a carrier gas to increase the milk supply pressure in addition to the vapor pressure at the liquid liquefied gas temperature, especially when the distance between the primary pipe 2a is long and the pressure loss is large. It is possible to supplement the pressure loss and adjust the forced gas supply pressure by using the carrier gas in addition to the gas supply pressure obtained from the difference between the vapor pressure of the primary vaporization tool lb and the vapor pressure of the reliquefaction tool 3a. Liquefied gas supply rate. It is also possible to avoid 24 200928172 because of the heat of vaporization and the temperature of the liquid phase temperature caused by bubbles to supply a highly stable liquefied gas. Furthermore,::: Liquefaction of gasification to the treatment unit 5 after gasification The amount of gas is because it is possible to set the flow rate to the storage tool 3b, so even when the liquefied gas is diluted with the == carrier gas, it is possible to ensure the required amount of stored gas by increasing the supply rate of the C body of the rare (four) knife. And re-liquefaction in the primary pipe 2a is avoided.

在本裝置中,有效的是使液化氣體伴隨著載體氣體, 且不只如® 2(B)所顯示之藉由將載體氣體導人至液相氣體 中的起泡方法’還有也可使用使載體氣體通過液相氣體表 面的方法或藉由另外加X載體氣體使一次汽化工具之載體 氣體被稀釋的方法。在此情況中,關於在-次液化氣體供 應設備1中調整之參考溫度,為了準確性,合意的是使用 載體氣體的露點來控制而不是由每個測量工具所量溫度。 對於載體氣體,一般合意的是使用像是He、Ar和N2 的惰性氣體。然而,當在像是磊晶晶圓處理製程的情況裡, SiHCh用作為液化氣體時,像是出的氣體是合意的。 [二次液化氣體供應設備3] 二次液化氣體供應設備3具有將從二次液化氣體供應 設備3和一次管道系統2供應之氣態液化氣體再液化,將 其以液態液化氣體暫時儲存的功能(之後稱為“再液化儲存 模式”)的功能,和將曾經被儲存之液化氣體再氣化並將其以 氣態供應至處理裝置的功能(之後稱為“再汽化模式,,)。 在本裝置中,合意的是如圖3(A)和(B)所示,具有至少 25 200928172 、獨,立運作且可交替地轉換的‘‘再液化儲存模式,,和“再 式”’因為對於持續操作的處理裝置而言,液化氣體 供應裝置”求係大的。持續確保在儲存工具3b所欲之液 可,體的#卩及供應液化氣體所欲之屢力和流速將變成 米更具體而言,在圖3⑷中,有兩個儲存槽3ia和川。 田儲存槽3 la作用為從—次液化氣體供應設備^經由換向間 ❹33a (打開的)以氣態供應且在再汽化工具3&amp;中再液化之液 化氣體的暫時儲存處時,儲存槽川作用來再氣化經儲存 的再液化液化氣體’且將其經由換向閥33d(打開的)以氣態 供f。兩個儲存槽和3ib的作用係使到處理裝置5的液 化氣體在轉換這兩個功能時可持續地供應。亦即,當儲存 槽31a在“再液化儲存模式,,時,換向閥33&amp;係打開的且換向 閥33c係關閉的,同時儲存槽31b係在“再汽化模式”,且其 換向閥33b係關閉的和換向閥33d係打開的。相反地,當 〇 儲存槽31b在“再液化儲存模式,,時,換向閥33b係打開的且 換向閥33d係關閉的,同時儲存槽3 la係在“再汽化模式”, 且其換向閥33a係關閉的和換向閥33c係打開的。在圖3(a) 中’打開狀態之換向閥33a〜33d係以白色顯示,且該些關 閉狀態者係以黑色顯示。 控制兩個儲存槽3 la和3 lb以在“再液化儲存模式,,和 “再汽化模式’,兩個功能間交替地轉換,而能夠持續將液化氣 體供應至處理裝置5。當在“再汽化模式,,時,儲存槽31b中 剩餘液體的量比預設程度低時,會發生轉換。至於在槽中 26 200928172 剩餘量的偵測’一般係秤重該槽,且因此,兩個槽係架置 在荷重元3 2上。 更詳細之在“再液化儲存模式”中儲存槽31a的表現係 提供如下。當從一次液化氣體供應設備丨以氣態饋送之液 化氣體在再液化工具3a中被冷卻和再液化時,液相的液化 氣體係漸漸地被儲存在此儲存工具3b中。當儲存的量以此 方式達到預設程度時,在儲存槽31&amp;之換向閥33&amp;會自動關 φ ,,且同時溫度控制的溫度設定會自動從先前再液化的設 疋轉換為再氣化的設定。如此可避免在轉換模式時的壓力 短缺,其係藉由在從“再液化儲存模式,,轉換到“再汽化模式” 發生之前,預先將在“再液化儲存模式,,側待命模式之液體溫 度切換成“再汽化模式”的溫度設定。 兩個儲存槽3 la和3 lb具有溫度控制功能以降低溫度並 將溫度維持在一定的程度。亦即,有測量在再液化工具“ 之液化溫度Tc的工具、測量在儲存工具3b之儲存溫度Ts 〇 的工具、測量在二次汽化工具3e之液相液化氣體溫度Tg 的工具、以及控制液化溫度Tc、儲存溫度Ts、和液相液化 氣體溫度Tg的工具(未顯示於圖中),使得從一次液化氣體 供應設備1供應之液化氣體低於足夠冷卻的程度以將其再 液化,且然後控制使其再氣化以將其以氣態饋送至處理裝 置5。在二次液化氣體供應設備3中儲存槽31a和31b的溫 度控制係如下设計來控制分別視儲存槽3 i a和3 1 b操作模式 而定之溫度。亦即,合意的是在“再液化儲存模式,,的儲存槽 31a之溫度控制係經回饋控制的,使得儲存槽3ι的側邊表 27 200928172 面溫度在預設的溫度,且“再汽化模式”的儲存槽31b之溫度 控制係藉由持續監控壓力完成,該壓力監控係藉由使用在 赌存槽3 lb的出口管道壓力感測器34b,以及使用“再汽化 模式”此壓力值來計算從“飽和蒸氣壓對溫度’,特性圖之液相 溫度,其對於液化氣體係獨一的,使得此經計算的液體溫 度在預設程度回饋控制,如同在一次液化氣體供應設備丄 之填充容器1 a的溫度控制般。 ❺ 雖然上述解釋了使用儲存槽31&amp;和31b,裝配有在“再 液化儲存模式”和“再汽化模式”間轉換的功能的情況,但本 裴置的使用並不限於這些情況,而且像是在‘‘再液化儲存模 式”和“再汽化模式,,之間批式轉換單一儲存槽3 la,或安排 儲存槽31a專屬於“再液化儲存模式,,和儲存槽31b專屬於 “再汽化模式,,串聯在一起的情況也是可能的。 圖3(B)顯示在本裝置中二次液化氣體供應設備3的變 體實施例。基本的組成和圖3 (A)的一樣,但不同在於具有 ❹ 資流控制器35、轉向閥36a和36b、和幾乎接近液相液化氣 體底層的載體氣體導入管lh作為再氣化以液態儲存於儲存 槽31a和3lb之液化氣體的方法。作為二次汽化工具氕, 有可能除了在液相液化氣體溫度的蒸氣壓外,亦使用載體 氣體’以強制氣體供應來改善氣體的供應壓力。特別是當 二次管道4a的距離為長的,且壓力損失大時,有可能藉由 除了從在一次汽化工具lb之蒸氣壓和在再液化工具3a之蒸 氣壓之間的差異所獲得之氣體供應壓力外,亦使用載體氣 體調整強制氣體供應壓力來補充壓力損失和調整液化氣體 28 200928172 的供應速率。此外,在需要供應低濃度液化氣體至處理裝 置5的情況裡,或當多種類型的液化氣體被混合和使用時, 藉由供應作為伴隨著液化氣體的載體氣體之惰性氣體,有 可能提供對應於操作條件的液化氣體供應,以及構成高度 多功能的液化氣體供應裝置。 在此時,可使用載體氣體的流速控制來控制伴隨載體 氣體之液化氣體的量(一般稱作“收集速率”)。亦即,當液相 ❹ 溫度被控制在幾乎為固定的狀況,有可能藉由控制質流控 制器35以增加載體氣體流速來增加收集速率。再者,若對 伴隨載體氣體之液化氣體的量沒有限制,也有可能使用使 載體氣體略過液相表面之表面的方法,而不是如圖3(b)所 不之將載體氣體導人液相氣體的起泡方法。合意的是使用 像是HeW晴性氣體或&amp;作為載體氣艘,如說明於上 面的[一次液化氣體供應設備丨]般。 [一次氣體供應管道系統2] 之二一 St氣體供應設備1和二次液化氣體供應設備3 之間的…人…a,亦即一次管道系統 的液化氣體供應流速的f I田私主道触的S道直徑外’沒有特別的規格,且 又用於t體液化氣體供應管道者係足夠的。再者,在 習知技術中為了避免在一次管 1 ^ ^ Ra ^ ^道2&amp;中再液化所需要的工 具,像疋熱絕和加熱裳置, 如上所述,因為許多低蒸氣=、、點也Μ要的。然而, 10m ,、;、液化氣體係有腐蝕性且有 毒的,一般使用經内部表面 ^ 管道(SUS)。在-Μ 4内部表面加卫的不錄鋼 Μ體供應管道系統2中,合意的是測量 29 200928172 系統的周圍溫度Ta,估算一次氣體供應管道系統2之周圍 溫度Ta波動㈣的較低極限,絲在_次液化氣體供應設 備1中液相液化氣體溫度7〇的控制溫度設定在低於該較低 的極限。 [二次氣體供應管道系統4] 此係在二次液化氣體供應設備3和為氣體消耗設備的 處理裝置5之間的二次管道4a,亦即二次管道系統*。如同 © ^次管道2a的情況一般,除了具有適合的液化氣體供應流 速的e道直徑外,沒有特別的規格,且一般用於半導體液 化氣體供應管道者係足夠的。再者,在習知技術中為了避 免在管道中再液化所需要的工具,像是熱隔絕和加熱裝 置,係一點也不需要的。像是sus的材料係用於二次管道 广中,如同一次管道系統2般,且合意的是藉由測量二次 營道系統4的環境溫度來控制溫度。 [本裝置的操作方法] ® 為了有效的使用說明於上的功能,合意的是隨著下面 的製程操作本裝置。 (1) 將填充在填充容器la之液化氣體一次氣化的製程 (2) 將經氣化的液化氣體透過一次管道2a 一次供應的製 程 (3) 將該以氣態供應之液化氣體再液化的製程 (4) 將該再液化之液化氣體以液態儲存的製程 (5) 將該液態之液化氣體二次氣化的製程 (6) 透過二次管道4a將經氣化之液化氣體二次供應到處 200928172 理裝置5的製程 (7)使用健存於製程(4)之液化液體補充用於製程(5)之 液態液化氣體的製程 ^隨著這些步驟,可能的是,即使當使用低蒸氣壓液化 氣體時避免在氣體供應管道(在一次管道2a和二次管道 扣兩者中)的再液化、確保從填充容器la到處理裝置5的 氣體仏應壓力、以及穩定供應所欲的流速,其係藉由一旦 ❹ 將在靠近處理裝置5的以氣態供應之液化氣體強制液化, 將其再氣化,且然後將其供應至處理裝置5。 &lt;本裝置的溫度控制&gt; 本裝置的特徵在於,藉由控制在填充容器13中液相液 化氣體的溫度(一次液相溫度)τ〇使其低於在一次管道系統 2之%境溫度的最低溫度,在二次液化氣體供應設備3中液 化溫度Tc或此與上述儲存溫度Ts低於液相液化氣體溫度 T〇,以及上述液相液化氣體溫度Tg(二次液相溫度)低於周 Φ 圍'里度Tb的最低溫度。此後,預設的一次液相溫度稱作 “Tsetl”,預設的液化溫度(在“再液化儲存模式”之儲存槽 3 1 a的底部之側邊表面溫度)稱作“Tset2,,,以及二次汽化溫 度(在再化模式”之儲存槽31b的液相溫度)稱作“Tset3”。 使用習知的供應方法,因為再液化和不足的壓力供應 問題’要供應低蒸氣壓液化氣體通過長距離的管道係困難 的’特別是當使用低蒸氣壓液化氣體時,其中該麼力供應 係指從一次液化氣體供應設備1到處理裝置5的壓力差△ P。相反的’本裝置使下面的機制成為可能:分別從處理裝 31 200928172 置5所需的壓力來設定液化氣體流經在一次液化氣體供應 設備1和二次液化氣體供應設備3之間的一次管道2a的壓 力,其係藉由導入所謂的“液化氣體接力區段”,亦即二次液 化氣體供應設備3,安裝在氣體供應管道的中間。因為此型 態,在長距離管道中的再液化問題和在長距離管道中壓力 不足的問題可同時排除,其係藉由將液化氣體在一次管道 2a流動的飽和蒸氣溫度降低至不在管道中引起再液化的程 度。In the present apparatus, it is effective to use a liquefied gas accompanying the carrier gas, and not only a foaming method for introducing the carrier gas into the liquid phase gas as shown by the ® 2 (B), but also may be used. A method in which a carrier gas passes through a surface of a liquid phase gas or a method in which a carrier gas of a primary vaporization tool is diluted by additionally adding an X carrier gas. In this case, with regard to the reference temperature adjusted in the secondary liquefied gas supply device 1, for accuracy, it is desirable to use the dew point of the carrier gas to control rather than the temperature measured by each measuring tool. For carrier gases, it is generally desirable to use inert gases such as He, Ar and N2. However, when SiHCh is used as a liquefied gas in the case of an epitaxial wafer processing process, it is desirable to use a gas. [Secondary liquefied gas supply device 3] The secondary liquefied gas supply device 3 has a function of reliquefying the gaseous liquefied gas supplied from the secondary liquefied gas supply device 3 and the primary piping system 2, and temporarily storing it as a liquid liquefied gas ( The function, hereinafter referred to as "reliquefaction storage mode", and the function of regasifying the previously stored liquefied gas and supplying it to the processing device in a gaseous state (hereinafter referred to as "re-evaporation mode,"). Among them, it is desirable to have a 'reliquefaction storage mode, at least 25 200928172, which can be alternately operated and alternately converted as shown in Figures 3(A) and (B), because For the operating treatment device, the liquefied gas supply device is "large." Continue to ensure that the liquid in the storage tool 3b can be, the body #卩 and the supply of liquefied gas will be the desired force and flow rate will become m. More specifically, in Figure 3 (4), there are two storage tanks 3ia and Sichuan. The storage tank 3 la acts as a storage tank for the liquefied gas supplied from the secondary liquefied gas supply device via the reversing port 33a (open) in a gaseous state and reliquefied in the revaporizing tool 3 & The stored reliquefied liquefied gas ' is regasified and supplied to the gas via a reversing valve 33d (open). The action of the two storage tanks and 3ib allows the liquefied gas to the treatment unit 5 to be continuously supplied while switching the two functions. That is, when the storage tank 31a is in the "reliquefaction storage mode, the reversing valve 33 &amp; is open and the reversing valve 33c is closed, while the storage tank 31b is in the "re-evaporation mode" and its commutation The valve 33b is closed and the reversing valve 33d is opened. Conversely, when the crucible storage tank 31b is in the "reliquefaction storage mode, the reversing valve 33b is opened and the reversing valve 33d is closed, and stored. The groove 3 la is in the "re-evaporation mode", and its reversing valve 33a is closed and the reversing valve 33c is opened. The reversing valves 33a to 33d in the 'open state' in Fig. 3(a) are displayed in white, and those in the closed state are displayed in black. The two storage tanks 3 la and 3 lb are controlled to alternately switch between the two functions in the "reliquefaction storage mode," and "re-evaporation mode", and the liquefied gas can be continuously supplied to the processing device 5. When in the "re-evaporation mode," the amount of liquid remaining in the storage tank 31b is lower than a preset degree, a transition occurs. As for the detection of the remaining amount in the tank 26 200928172, the tank is generally weighed, and thus The two tanks are placed on the load cell 32. In more detail, the performance of the storage tank 31a in the "reliquefaction storage mode" is as follows. When the liquefied gas is fed from the primary liquefied gas supply device in a gaseous state, When the liquefaction tool 3a is cooled and reliquefied, the liquid phase liquefied gas system is gradually stored in the storage tool 3b. When the stored amount reaches a predetermined level in this manner, the reversing valve in the storage tank 31 &amp;33&amp; will automatically turn off φ, and at the same time the temperature control temperature setting will automatically switch from the previous reliquefaction setting to the regasification setting. This avoids the pressure shortage in the conversion mode, which is caused by In the reliquefaction storage mode, before switching to the "re-evaporation mode", the temperature setting in the "reliquefaction storage mode, the side standby mode liquid temperature is switched to the "re-evaporation mode" beforehand. The storage tanks 3 la and 3 lb have a temperature control function to lower the temperature and maintain the temperature to a certain extent. That is, there is a tool for measuring the liquefaction temperature Tc of the reliquefaction tool, and measuring the storage temperature Ts of the storage tool 3b 〇 Tool, a tool for measuring the liquid phase liquefied gas temperature Tg of the secondary vaporization tool 3e, and a tool for controlling the liquefaction temperature Tc, the storage temperature Ts, and the liquid phase liquefied gas temperature Tg (not shown), so that The liquefied gas supplied from the liquefied gas supply device 1 is lower than sufficient to be reliquefied, and then controlled to be regasified to be fed to the treatment device 5 in a gaseous state. The temperature control of the storage tanks 31a and 31b in the secondary liquefied gas supply device 3 is designed to control the temperature depending on the operation modes of the storage tanks 3 i a and 3 1 b, respectively. That is, it is desirable that in the "reliquefaction storage mode, the temperature control of the storage tank 31a is feedback-controlled so that the side surface of the storage tank 3i is at a preset temperature, and the "re-evaporation mode" The temperature control of the storage tank 31b is completed by continuously monitoring the pressure, which is calculated by using the outlet pipe pressure sensor 34b in the credit slot 3 lb and using the "re-evaporation mode" pressure value. From "saturated vapor pressure versus temperature", the liquid phase temperature of the characteristic map, which is unique to the liquefied gas system, allows the calculated liquid temperature to be fed back at a predetermined level, as in a filling vessel of a liquefied gas supply device 1 a temperature control. ❺ Although the above explains the use of the storage tanks 31 &amp; and 31b, equipped with the function of switching between the "reliquefaction storage mode" and the "re-evaporation mode", the use of the device is not limited to these cases, and In the 're-liquefaction storage mode' and the "re-evaporation mode, the batch transfer of a single storage tank 3 la, or the arrangement of the storage tank 31a exclusive to the "reliquefaction storage mode," and the storage tank 31b exclusive to the "re-evaporation mode" ,, the situation of being connected in series is also possible. Fig. 3(B) shows a variant embodiment of the secondary liquefied gas supply device 3 in the present apparatus. The basic composition is the same as that of Fig. 3 (A), but differs in that the flow controller 35, the steering valves 36a and 36b, and the carrier gas introduction pipe lh which is close to the bottom layer of the liquid phase liquefied gas are stored as liquid re-gasification. A method of storing liquefied gases in tanks 31a and 31b. As a secondary vaporization tool, it is possible to use a carrier gas 'to force a gas supply to improve the supply pressure of the gas in addition to the vapor pressure of the liquid phase liquefied gas temperature. Particularly when the distance of the secondary pipe 4a is long and the pressure loss is large, it is possible to obtain the gas obtained by the difference from the vapor pressure of the primary vaporization tool 1b and the vapor pressure of the reliquefaction tool 3a. In addition to the supply pressure, the carrier gas is also used to adjust the forced gas supply pressure to supplement the pressure loss and adjust the supply rate of the liquefied gas 28 200928172. Further, in the case where it is required to supply a low-concentration liquefied gas to the treatment device 5, or when a plurality of types of liquefied gases are mixed and used, by supplying an inert gas as a carrier gas accompanying the liquefied gas, it is possible to provide a corresponding Liquefied gas supply under operating conditions and a highly versatile liquefied gas supply. At this time, the flow rate control of the carrier gas can be used to control the amount of liquefied gas accompanying the carrier gas (generally referred to as "collection rate"). That is, when the liquid helium temperature is controlled to an almost fixed condition, it is possible to increase the collection rate by controlling the mass flow controller 35 to increase the carrier gas flow rate. Furthermore, if there is no limitation on the amount of the liquefied gas accompanying the carrier gas, it is also possible to use a method of causing the carrier gas to bypass the surface of the liquid phase surface instead of introducing the carrier gas into the liquid phase as shown in Fig. 3(b). A method of foaming a gas. It is desirable to use a HeW-like gas or &amp; as a carrier gas carrier, as illustrated in the above [primary liquefied gas supply equipment]. [Primary gas supply piping system 2] between the St gas supply device 1 and the secondary liquefied gas supply device 3...a, that is, the liquefied gas supply flow rate of the primary piping system Outside the S-channel diameter, there is no special specification, and it is sufficient for the t-body liquefied gas supply pipe. Furthermore, in the prior art, in order to avoid re-liquefaction of the tools required in the primary tube 1 ^ ^ Ra ^ ^ 2 &amp;, like heat and heat, as described above, because many low vapor =, The point is also very important. However, the 10m, 、, liquefied gas system is corrosive and toxic, and is generally used through the internal surface of the pipe (SUS). In the unloaded steel body supply piping system 2 which is reinforced on the inner surface of the -4, it is desirable to measure the ambient temperature Ta of the system 29 200928172, and estimate the lower limit of the fluctuation (4) of the ambient temperature Ta of the primary gas supply piping system 2, The control temperature of the liquid phase liquefied gas temperature 7 中 in the liquefied gas supply device 1 is set to be lower than the lower limit. [Secondary gas supply piping system 4] This is a secondary piping 4a between the secondary liquefied gas supply apparatus 3 and the processing apparatus 5 which is a gas consuming apparatus, that is, a secondary piping system*. As in the case of the © sub-pipe 2a, there is no special specification other than the e-channel diameter having a suitable liquefied gas supply flow rate, and it is generally sufficient for the semiconductor liquefied gas supply pipe. Furthermore, in the prior art, tools required to avoid reliquefaction in the pipeline, such as thermal insulation and heating means, are not required at all. Materials such as sus are used in secondary pipelines, as in the case of primary piping systems, and it is desirable to control the temperature by measuring the ambient temperature of the secondary camp system 4. [Operation method of this unit] ® In order to use the function described above effectively, it is desirable to operate the unit with the following procedures. (1) a process of re-liquefying the liquefied gas filled in the filling vessel la (2) a process of reliquefying the liquefied gas supplied in a gaseous state by a process (3) of supplying the vaporized liquefied gas through the primary pipe 2a once (4) The process of reliquefying the liquefied liquefied gas in a liquid state (5) The process of secondary gasification of the liquid liquefied gas (6) through the secondary pipe 4a to supply the vaporized liquefied gas to the second place 200928172 Process (7) of the device 5 is supplemented with a liquid liquefied gas used in the process (5) using a liquefied liquid stored in the process (4). With these steps, it is possible, even when using a low vapor pressure liquefied gas. Avoid re-liquefaction of the gas supply pipe (in both the primary pipe 2a and the secondary pipe buckle), ensure the gas pressure from the filling container la to the processing device 5, and stabilize the desired flow rate of the supply. The liquefied gas supplied in a gaseous state close to the treatment device 5 is forced to liquefy once it is once liquefied, and then supplied to the treatment device 5. &lt;Temperature Control of the Present Device&gt; The apparatus is characterized in that the temperature (primary liquidus temperature) τ 液相 of the liquid liquefied gas in the filling vessel 13 is controlled to be lower than the temperature of the primary conduit system 2 The lowest temperature, the liquefaction temperature Tc in the secondary liquefied gas supply device 3 or the above storage temperature Ts is lower than the liquid phase liquefied gas temperature T〇, and the liquid phase liquefied gas temperature Tg (secondary liquidus temperature) is lower than Week Φ around the minimum temperature of the Tb. Thereafter, the preset primary liquid phase temperature is referred to as "Tsetl", and the preset liquefaction temperature (the side surface temperature at the bottom of the storage tank 31a in the "reliquefaction storage mode") is referred to as "Tset2,,, and The secondary vaporization temperature (the liquidus temperature of the storage tank 31b in the recrystallization mode) is referred to as "Tset3". Using conventional supply methods, because of reliquefaction and insufficient pressure supply problems, it is difficult to supply low vapor pressure liquefied gases through long distance pipelines, especially when using low vapor pressure liquefied gases, where the force supply system The pressure difference Δ P from the primary liquefied gas supply device 1 to the processing device 5 is referred to. Conversely, the device makes it possible to set the liquefied gas flow through a pipe between the primary liquefied gas supply device 1 and the secondary liquefied gas supply device 3, respectively, from the pressure required by the processing device 31 200928172 The pressure of 2a is installed in the middle of the gas supply pipe by introducing a so-called "liquefied gas relay section", that is, the secondary liquefied gas supply device 3. Because of this type, the problem of reliquefaction in long-distance pipelines and the problem of insufficient pressure in long-distance pipelines can be simultaneously eliminated by lowering the saturated vapor temperature of the liquefied gas flowing in the primary conduit 2a to not in the pipeline. The degree of reliquefaction.

更具體而言,若一次液化氣體供應設備丨的液相溫度 (TsetD (例如10。〇係設定的比一次管道任何部分的周 圍溫度Ta(例如15〜30 〇C)低時,避免在一次管道2a中的 再2化係可能的。再者,在此條件下,若二次液化氣體供 應n又備3中再液化之儲存槽3U的溫度加⑺設定在例如〇 C時,且控制在大約±2〇匸内媒媒 獲得約2〇〜30 kPa的氣體 力係可能的m可有效使用本襄置的功能。至 於再汽化之儲存槽31b令液相溫度(丁㈣)的設定,若其钟 f在例如15 °c’亦即比Tset2再液化的溫度高,且同時: :在2Γ裝置5中氣體供應管道任何部分的周圍溫度 置”斤需之::5;〇,且控制在±2。°之内’要確保在處理裝 置所需之大約30〜騎pa的供應屢力係可能的。 :即,如圖4所顯示,在此溫度控制系統 度(-次管二?: 液相溫度T。在至少比周圍溫 化。藉此,在大;^m,Ta)低3°cc°c來進行汽 一 k la之官道壁表面的熱流動在管道尹 32 200928172 ::持在從管道外面環境周圍往氣化之液化氣體的方向。 在π化溫度於飽和蒸氣狀態的液化氣體的工具會持續從管 2部透過流動過程經由管道獲得熱4移動到過熱蒸氣 程又,且因而不會發生像在習知方法中在接力管道中液化 氣體的再液化。More specifically, if the liquidus temperature (TsetD of the primary liquefied gas supply device ( (for example, 10 〇 is set lower than the ambient temperature Ta of any part of the primary pipe (for example, 15 to 30 〇C), the primary pipe is avoided. Further, in the case of 2a, it is possible to adjust the temperature of the storage tank 3U in the second liquefied gas supply n and the reliquefaction tank 3 (7), for example, at 〇C, and the control is about The gas force of about 2 〇 to 30 kPa is obtained in ±2 〇匸. The m function can effectively use the function of the device. As for the re-vaporization storage tank 31b, the liquidus temperature (D) is set. The clock f is at a temperature of, for example, 15 °c', that is, higher than the temperature at which Tset2 is reliquefied, and at the same time: : in the 2Γ device 5, the ambient temperature of any part of the gas supply pipe is set to "5: 〇, and is controlled at ± Within 2 ° 'to ensure that the supply of equipment required for the treatment of about 30 ~ riding pa is possible. : That is, as shown in Figure 4, at this temperature control system degree (- secondary tube two?: liquid The phase temperature T is at least warmer than the surrounding. Thereby, the large-scale ^m, Ta) is 3 °cc °c to carry out the steam-k la official road. The surface of the heat flow in the pipe Yin 32 200928172 :: in the direction of the liquefied gas from the outside of the pipe to the gasification of the gas. The tool of liquefied gas at the π temperature in the saturated vapor state will continue to flow from the pipe 2 through the flow process The pipe takes heat 4 to move to the superheated steam path again, and thus re-liquefaction of the liquefied gas in the relay pipe as in the conventional method does not occur.

❹ ,备一次液化氣體供應設備〗係置於和處理裝置5 :放置的無塵室30不同的房間1〇時,例如假設BY為一 次管道la之周圍溫度的&amp;低溫度係足夠#,因&amp;一次管道 la /、會在生產製程建築中流過。在此情況中,若在一次液 化氣體供應設備1之填充容器la裡的液相溫度係設定且準 確地控制在足夠地低於15 的溫度或大約為ι〇 %±2 °C,則上述目標可被實現。 再者,在本裝置中,較佳的是依照下面的操作(丨丨)〜 G-3)來起始液化氣體的供應。 (1-1)使液相的液化氣體溫度低於正常的控制溫度,且 低於一次管道系統的最低溫度和環境溫度,其係藉由在起 始液化氣體供應前’以冷卻源冷卻上述的填充容器。 (1-2)從上述填充容器開始以氣態供應液化氣體。 (1-3)將因為其氣體供應已被進一步冷卻的液相液化 氣體以熱源加熱來控制至正常的控制溫度。 亦即,藉由下面的這些步驟,確保避免在供應管道中 的再液化係可能的’即使當一次管道系統的最低溫度低於 環境溫度’且因為隨後溫度上升和適當的溫度控制,藉由 首先在液化氣體開始供應前,以冷卻源冷卻上述填充容器 33 200928172 至低於正常控制溫度,且低於一次管道系統的最低溫度和 環境溫度來確保氣體供應壓力。 [具《實例】 在管道中的再液化可被避免,且可確保連接到一次液 化氣體供應設備1和二次液化氣體供應設備3之管道兩端 的壓力差ΔΡ在报好的程度,其係藉由設定在每個如表1所 示槽中每個類型之液化氣體的Tsetl、Tset2、和Tset3的預 設溫度。在表1裡,周圍溫度Ta係當通過在一次液化氣體 供應設備1和二次液化氣體供應設備3之間的一次管道2a 的溫度;周圍溫度Tb係在二次液化氣體供應設備3和處理 裝置5之間的二次管道4a的溫度。如纟i所示,因為周圍 溫度Ta和Tb會隨位置、時間、季節而波動,和制 的設定把在低蒸氣廢之液化氣體供應設備的周圍環境之最 低預期溫度考慮進去。 ❹ 34 200928172 [表i] 預設溫度 預設溫度(基本設定) 建議的實際設定(參考) Tset 1 設定在比周圍溫度Ta 之最低設定低3°C以 上 考慮到再液化風險避免 的邊緣,建議的是將溫度 設定在比Ta低至多5。0 Tset 2 _______—- 設定在比Tsetl低5°C 以上 建議的是將溫度設定在 比Tsetl低至多1〇0C的 溫度以保存從液化氣體 供應設備排至液化氣體 供應設備的液相材料。 Tset 3 設定在比周圍溫度Tb 的最低設定低至多 3°C 因為由於環境的溫度跳 動係低的且當Tset3太低 時供應到處理裝置的壓 力減少了,所以建議的是 將溫度設定比周圍溫度 Tb的最低設定低至多 3°C,其中周圍溫度Tb係 在無塵室裡的溫度。 y面的表顯示當使用本發明的裝置(見圖3)於各種類型 之低蒸氣壓液化氣體時,預設溫度的分析實例。 (1)當使用SiH2Cl2時 Φ (1 -1)條件 在顯示於表2的條件下執行分析。 35 200928172 [表2]❹ When preparing a liquefied gas supply device, it is placed in a room different from the clean room 30 in which the treatment device 5 is placed. For example, it is assumed that BY is the temperature of the ambient temperature of the primary pipe la and the low temperature is sufficient. &amp; Once the pipeline la /, will flow through the production process building. In this case, if the liquidus temperature in the filling container la of the primary liquefied gas supply device 1 is set and accurately controlled to a temperature sufficiently lower than 15 or approximately ι〇% ± 2 °C, the above target Can be implemented. Further, in the present apparatus, it is preferred to start the supply of the liquefied gas in accordance with the following operations (丨丨) to G-3). (1-1) making the liquefied gas temperature of the liquid phase lower than the normal control temperature and lower than the minimum temperature and ambient temperature of the primary piping system by cooling the above by the cooling source before the initial liquefied gas supply Fill the container. (1-2) The liquefied gas is supplied in a gaseous state from the above-described filling container. (1-3) The liquid phase liquefied gas whose gas supply has been further cooled is heated by a heat source to be controlled to a normal control temperature. That is, by following these steps, it is ensured that the reliquefaction system in the supply line is avoided, even when the minimum temperature of the primary piping system is lower than the ambient temperature and because of subsequent temperature rise and proper temperature control, by first Before the liquefied gas begins to supply, the above-mentioned filling vessel 33 200928172 is cooled by a cooling source to a temperature lower than the normal control temperature and lower than the minimum temperature and ambient temperature of the primary piping system to ensure the gas supply pressure. [With the example] Reliquefaction in the pipeline can be avoided, and the pressure difference ΔΡ at both ends of the pipe connected to the primary liquefied gas supply device 1 and the secondary liquefied gas supply device 3 can be ensured at the reported level. The preset temperatures of Tset1, Tset2, and Tset3 of each type of liquefied gas set in each of the tanks shown in Table 1. In Table 1, the ambient temperature Ta is passed through the temperature of the primary pipe 2a between the primary liquefied gas supply device 1 and the secondary liquefied gas supply device 3; the ambient temperature Tb is at the secondary liquefied gas supply device 3 and the processing device The temperature of the secondary pipe 4a between 5. As shown in 纟i, since the ambient temperatures Ta and Tb fluctuate with position, time, and season, the system setting takes into account the lowest expected temperature in the surrounding environment of the low-vapor waste liquefied gas supply equipment. ❹ 34 200928172 [Table i] Preset temperature preset temperature (basic setting) Recommended actual setting (reference) Tset 1 is set at a temperature lower than the lowest setting of the ambient temperature Ta by 3 °C, considering the edge of re-liquefaction risk avoidance, it is recommended It is set to a temperature lower than Ta by 5. 0 Tset 2 _______—- Set at 5 °C lower than Tsetl. It is recommended to set the temperature to a temperature as low as 1 〇 0 C from Tsetl to save the liquefied gas supply device. A liquid phase material that is discharged to a liquefied gas supply device. Tset 3 is set to be at most 3 °C lower than the lowest setting of the ambient temperature Tb. Since the ambient temperature is low and the pressure supplied to the processing device is reduced when Tset3 is too low, it is recommended to set the temperature to the ambient temperature. The minimum setting of Tb is as low as 3 ° C, where the ambient temperature Tb is the temperature in the clean room. The y-side table shows an example of analysis of a preset temperature when using the apparatus of the present invention (see Fig. 3) for various types of low vapor pressure liquefied gases. (1) When SiH2Cl2 was used Φ (1 -1) condition The analysis was carried out under the conditions shown in Table 2. 35 200928172 [Table 2]

SiH2Cl2 一次液化氣體供應設備 一次管道 二次液化氣體供應設備 (當在再液化儲存模式時) 預設溫度 當時的壓力 周圍溫度:&gt;15 °C 預設溫度 當時的壓力 10 °c 110 kPa ------------------&gt; o°c 75 kPa 處理裝置 二次管道 二次液化氣體供應設備 (當在再汽化模式時) 希望的壓力 在裝置内的溫度 周圍溫度:&gt;20 °C 預設溫度 當時的壓力 &gt;50kPa &gt;20 °C «---------------- 15 °C 130 kPa (1-2)分析結果 在一次管道2a内沒有發生再液化,且可保證有足夠的 壓力AP (35 kPa),確保到處理裝置5的供應。再者,在二 次管道4a内沒有發生再液化,且可保證有足夠的壓力(80 kPa),確保到處理裝置5的供應。 (2)當使用CLF3時 (2-1)條件 在顯示於表3的條件下執行分析。 36 200928172 [表3] C1F3 一次液化氣體供應設備 一次管道 二次液化氣體供應設備 (當在再液化儲存模式時) 預設溫度 當時的壓力 周圍溫度:&gt;15 °C 預設溫度 當時的壓力 10 °c 110 kPa ------------------&gt; o°c 65 kPa 處理裝置 二次管道 二次液化氣體供應設備 (當在再汽化模式時) 希望的壓力 在裝置内的溫度 周圍溫度:&gt;20 °C 預設溫度 當時的壓力 &gt;50 kPa &gt;20°C «---------------- 15 °C 115 kPaSiH2Cl2 primary liquefied gas supply equipment primary pipeline secondary liquefied gas supply equipment (when in reliquefaction storage mode) preset temperature at the time of pressure ambient temperature: &gt; 15 °C preset temperature at that time pressure 10 °c 110 kPa -- ----------------&gt; o°c 75 kPa treatment unit secondary pipeline secondary liquefied gas supply equipment (when in re-evaporation mode) desired pressure in the unit Ambient temperature: &gt;20 °C Preset temperature at the time of pressure &gt;50kPa &gt;20 °C «---------------- 15 °C 130 kPa (1-2) Analysis As a result, no re-liquefaction occurs in the primary pipe 2a, and sufficient pressure AP (35 kPa) can be secured to ensure supply to the processing device 5. Further, no re-liquefaction occurs in the secondary pipe 4a, and sufficient pressure (80 kPa) can be secured to ensure supply to the processing device 5. (2) When CLF3 was used (2-1) Conditions The analysis was performed under the conditions shown in Table 3. 36 200928172 [Table 3] C1F3 Primary liquefied gas supply equipment Primary pipeline secondary liquefied gas supply equipment (when in reliquefaction storage mode) Preset temperature at the time of pressure ambient temperature: &gt; 15 °C Preset temperature at that time pressure 10 °c 110 kPa ------------------&gt; o°c 65 kPa treatment unit secondary pipe secondary liquefied gas supply equipment (when in re-evaporation mode) Temperature around the temperature inside the device: &gt;20 °C Preset temperature at the time of pressure &gt;50 kPa &gt;20°C «---------------- 15 °C 115 kPa

(2-2)分析結果 在一次管道2a内沒有發生再液化,且可保證有足夠的 壓力ΔΡ (30 kPa),確保到處理裝置5的供應。再者,在二 次管道4a内沒有發生再液化,且可保證有足夠的壓力(65 kPa),確保到處理裝置5的供應。 (3)當使用BCL3時 (3-1)條件 在顯示於表4的條件下執行分析。 37 200928172 [表4】 BCh 一次液化氣體供應設 備 一次管道 二次液化氣體供應設備 (當在再液化儲存模式時) 預設溫度 當時的壓力 周圍溫度:&gt; 15°C 預設溫度 當時的壓力 10 °c 90 kPa ------------------&gt; o°c 60 kPa 處理裝置 二次管道 二次液化氣體供應設備 (當在再汽化模式時) 希望的壓力 在裝置内的溫度 周圍溫度:&gt;20 °C 預設溫度 當時的壓力 &gt;50kPa &gt;20 °C «-------------------------- 15 °C llOkPa (3-2)分析結果 在一次管道2a内沒有發生再液化,且可保證有足夠的 壓力△ P (30 kPa),確保到處理裝置5的供應。再者,在 二次管道4a内沒有發生再液化,且可保證有足夠的壓力(60 kPa),確保到處理裝置5的供應。 (4)當使用HF時 (4-1)條件 在顯示於表5的條件下執行分析。 38 200928172 [表5](2-2) Analysis results No re-liquefaction occurred in the primary pipe 2a, and sufficient pressure ΔΡ (30 kPa) was secured to ensure supply to the processing apparatus 5. Further, no re-liquefaction occurs in the secondary pipe 4a, and sufficient pressure (65 kPa) is secured to ensure supply to the processing apparatus 5. (3) When BCL3 was used (3-1) Conditions The analysis was performed under the conditions shown in Table 4. 37 200928172 [Table 4] BCh primary liquefied gas supply equipment primary pipeline secondary liquefied gas supply equipment (when in reliquefaction storage mode) Preset temperature at the time of pressure surrounding temperature: &gt; 15 °C Preset temperature at that time pressure 10 °c 90 kPa ------------------&gt; o°c 60 kPa treatment unit secondary pipe secondary liquefied gas supply equipment (when in re-evaporation mode) Temperature around the temperature inside the device: &gt;20 °C Preset temperature at the time of pressure &gt;50kPa &gt;20 °C «--------------------- ----- 15 °C llOkPa (3-2) analysis results did not reliquefy in the primary pipe 2a, and sufficient pressure △ P (30 kPa) was ensured to ensure the supply to the processing device 5. Further, no reliquefaction occurs in the secondary pipe 4a, and sufficient pressure (60 kPa) can be secured to ensure supply to the processing apparatus 5. (4) When HF was used (4-1) Conditions The analysis was performed under the conditions shown in Table 5. 38 200928172 [Table 5]

HF 一次液化氣體供應設 備 一次管道 二次液化氣體供應設備 (當在再液化儲存模式時) 預設溫度 當時的壓力 周圍溫度:&gt;15 °C 預設溫度 當時的壓力 10 °c 75 kPa —----------------&gt; o°c 50kPa 處理裝置 二次管道 二次液化氣體供應設備 (當在再汽化模式時) 希望的壓力 在裝置内的溫度 周圍溫度:&gt;20 °C 預設溫度 當時的壓力 &gt;50kPa &gt;20 °C «-------------------- 15 °C 90 kPa (4-2)分析結果 在一次管道2a内沒有發生再液化,且可保證有足夠的 壓力AP (25 kPa),確保到處理裝置5的供應。再者,在二 次管道4a内沒有發生再液化,且可保證有足夠的壓力(40 kPa),確保到處理裝置5的供應。 使用這些類型的氣體作為說明應用的實施例;仍有其 他低蒸氣壓液化氣體的其他類似應用。再者,二次液化氣 體供應設備3係與第三儲存槽31c(未圖示)一起使用;當此 儲存槽3 1 c在待命模式時,可控制在待命模式之儲存槽3 1 c 的溫度控制以便控制當從待命模式切換到再汽化模式時供 應壓力的波動,其係藉由使其與再汽化模式的溫度相同, 且控制在待命模式之儲存槽3 lc裡液化氣體的溫度/壓力, 39 200928172 以便使其變成和在再汽化模式之儲存槽3 lb中相同的溫度/ 壓力。 [本發明之液化氣髏供應設備的其他骷置實施例】 上述配置的實施例說明了 一個一次液化氣體供應設備 連接至一個二次液化氣體供應設備的情況;然而,本發明 使建立由有分支的一次管道所組成的液化氣體供應設備(之 後稱作“裝置2”)成為可能,且能夠同時從一次液化氣體供 應設備將液化氣體供應至多個二次液化氣體供應設備,其 係藉由將多於一個的二次液化氣體供應設備連接至一個一 次液化氣體供應設備。 如圖5所說明,裝置2係三個二次液化氣體供應設備 3x、3y和3z連接至一個一次液化氣體供應設備的具體實 例。在此具體實例中’二次液化氣體供應設備3χ、3y和 3z可放置在相同無塵室的區域,其具有相同的通風溫度, 或匕們可放置在不同無塵室30x、30y和30z的區域,其且 有不同的通風溫度。 如上面所解釋’也是在裝置2中,在二次液化氣體供 應設備3x、3y和3z申的氣體供應壓力可和一次液化氣體供 應設備之氣體供應壓力相互獨立地設定◎也就是說,在裝 置2裡,一次液化氣體供應設備丨、一次管道2a、二次液化 氣體供應設備3x、3y和3z、以及二次管道系統4χ、4丫和 4z全是獨立的,且因此一次管道系統2可裝配有分支,且 來自一次液化氣體供應設備1的液化氣體可藉由操作二次 液化氣體供應設備3x、3y和3z在不同的條件下供應。例 200928172 如,具有經控制--今名a* ^ 至處理裝置5χ、Γ二氣5體供壓力的各種液化氣體可被供應 5y和5Ζ。再者,也可能的是,在各種條 下供應二次氣體流動至處理裝置5x、5y和5z。 ’ [可能的產業應用]HF primary liquefied gas supply equipment primary pipeline secondary liquefied gas supply equipment (when in reliquefaction storage mode) Preset temperature at the time of pressure surrounding temperature: &gt; 15 °C Preset temperature at that time pressure 10 °c 75 kPa --- ---------------&gt; o°c 50kPa treatment unit secondary pipeline secondary liquefied gas supply equipment (when in re-evaporation mode) desired pressure within the temperature of the device :&gt;20 °C Preset temperature at the time of pressure&gt;50kPa &gt;20 °C «-------------------- 15 °C 90 kPa (4-2 The analysis results that no re-liquefaction occurred in the primary pipe 2a, and sufficient pressure AP (25 kPa) was ensured to ensure supply to the processing device 5. Further, no re-liquefaction occurs in the secondary pipe 4a, and sufficient pressure (40 kPa) can be secured to ensure supply to the processing device 5. These types of gases are used as examples for illustrative applications; there are other similar applications for other low vapor pressure liquefied gases. Furthermore, the secondary liquefied gas supply device 3 is used together with the third storage tank 31c (not shown); when the storage tank 3 1 c is in the standby mode, the temperature of the storage tank 3 1 c in the standby mode can be controlled. Controlling to control the fluctuation of the supply pressure when switching from the standby mode to the re-vaporization mode by making it the same temperature as the re-vaporization mode, and controlling the temperature/pressure of the liquefied gas in the storage tank 3 lc of the standby mode, 39 200928172 so that it becomes the same temperature/pressure as in the storage tank 3 lb of the revaporization mode. [Other Embodiments of the Liquefied Gas Supply Apparatus of the Present Invention] The embodiment of the above configuration illustrates a case where a primary liquefied gas supply apparatus is connected to a secondary liquefied gas supply apparatus; however, the present invention enables establishment by branching A liquefied gas supply device (hereinafter referred to as "device 2") composed of a primary pipe is made possible, and can simultaneously supply liquefied gas from a single liquefied gas supply device to a plurality of secondary liquefied gas supply devices, which is A secondary liquefied gas supply device is connected to a primary liquefied gas supply device. As illustrated in Fig. 5, the apparatus 2 is a specific example in which three secondary liquefied gas supply apparatuses 3x, 3y and 3z are connected to a primary liquefied gas supply apparatus. In this specific example, the 'secondary liquefied gas supply devices 3χ, 3y and 3z can be placed in the same clean room area, which have the same ventilation temperature, or they can be placed in different clean rooms 30x, 30y and 30z. Areas with different ventilation temperatures. As explained above, also in the device 2, the gas supply pressures at the secondary liquefied gas supply devices 3x, 3y, and 3z can be set independently of each other with the gas supply pressure of the primary liquefied gas supply device. In 2, the primary liquefied gas supply device 丨, the primary pipe 2a, the secondary liquefied gas supply devices 3x, 3y, and 3z, and the secondary piping systems 4χ, 4丫, and 4z are all independent, and thus the primary piping system 2 can be assembled. There is a branch, and the liquefied gas from the primary liquefied gas supply device 1 can be supplied under different conditions by operating the secondary liquefied gas supply devices 3x, 3y, and 3z. Example 200928172 For example, various liquefied gases with controlled--current name a*^ to the processing device 5χ, Γ二气5 body supply pressure can be supplied 5y and 5Ζ. Furthermore, it is also possible to supply secondary gas to the treatment devices 5x, 5y and 5z under various strips. ‘ [possible industrial application]

主要是描述供應在+導體生產或用於FD 體中使用的特殊絲度的牛導 行殊材枓氣體的供應裝置和供應方法;然而, 本發明並不限於用於這些電子產品的液化氣體,且可應用 ❹ 至用於各種製程的液化氣體。其對於要求供應低蒸氣壓液 化氣體的製造製程係特別有用的。 【圖式簡單說明】 [圖1]係說明本發明液化氣體供應設備之基本配置實施 例的圖。 [圖2]係說明本發明液化氣體供應設備之一次液化氣體 供應設備的說明圖式。 [圖3]係說明本發明液化氣體供應設備之二次液化氣體 供應設備的說明圖式。 [圖4]係說明本發明液化氣體供應設備之溫度設定方法 的說明圖式。 [圖5]係說明本發明液化氣體供應設備之其他配置實施 例的說明圖式。 [圖6]係說明氣體供應設備之未來發展的圖式。 [圖7]係說明氣體供應設備之未來發展的圖式。 [圖8]係說明氣體供應設備之未來發展的圖式。 200928172 [圖9]係說明氣體供應設備之未來發展的圖式。 【主要元件符號說明】 1 : 一次液化氣體供應設備 1 a :填充容器 1 b : —次汽化工具 1 c :冷卻區段 1 d .加熱區段 1 e :冷卻介質單元 © 1 f :荷重元 lg:載體氣體導入區段 lh:載體氣體導入管 1 z : —次液化氣體供應設備1之框殼 2 : —次管道系統 2a : —次管道 3 :二次液化氣體供應設備 3 a :再液化工具 ® 3b :儲存工具 3 c :二次汽化工具 3x :裝置2之二次液化氣體供應設備 3y :裝置2之二次液化氣體供應設備 3z :裝置2之二次液化氣體供應設備 4 :二次管道系統 4a :二次管道 4x :裝置2之二次管道系統 42 200928172 4y :裝置2之二次管道系統 4z :裝置2之二次管道系統 5 :處理裝置 5x :處理裝置 5y :處理裝置 5z :處理裝置 6 :排氣處理裝置 10 :液化氣體供應室It is mainly a description of a supply device and a supply method for supplying a special wire having a special degree of filament production in a +conductor production or for use in an FD body; however, the present invention is not limited to the liquefied gas used for these electronic products, It can be applied to liquefied gases used in various processes. It is particularly useful for manufacturing processes that require the supply of low vapor pressure liquefied gases. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1] Fig. 1 is a view showing an example of a basic configuration of a liquefied gas supply apparatus of the present invention. Fig. 2 is an explanatory view showing a primary liquefied gas supply apparatus of the liquefied gas supply apparatus of the present invention. Fig. 3 is an explanatory view for explaining a secondary liquefied gas supply apparatus of the liquefied gas supply apparatus of the present invention. Fig. 4 is an explanatory view for explaining a method of setting a temperature of a liquefied gas supply device of the present invention. Fig. 5 is an explanatory view for explaining another configuration example of the liquefied gas supply apparatus of the present invention. [Fig. 6] is a diagram illustrating the future development of a gas supply device. [Fig. 7] is a diagram illustrating the future development of a gas supply device. [Fig. 8] is a diagram illustrating the future development of a gas supply device. 200928172 [Fig. 9] is a diagram illustrating the future development of a gas supply device. [Main component symbol description] 1 : Primary liquefied gas supply device 1 a : Filling container 1 b : - Secondary vaporization tool 1 c : Cooling section 1 d. Heating section 1 e : Cooling medium unit © 1 f : Load weight lg : carrier gas introduction section lh: carrier gas introduction pipe 1 z : frame housing 2 of secondary liquefied gas supply device 1 : secondary pipe system 2 a : - secondary pipe 3 : secondary liquefied gas supply device 3 a : reliquefaction tool ® 3b : Storage tool 3 c : Secondary vaporization tool 3x : Secondary liquefied gas supply device 3y for device 2 : Secondary liquefied gas supply device for device 2 3z : Secondary liquefied gas supply device for device 2 : Secondary pipe System 4a: secondary pipe 4x: secondary pipe system 42 of device 2 200928172 4y: secondary pipe system 4z of device 2: secondary pipe system 5 of device 2: processing device 5x: processing device 5y: processing device 5z: processing Device 6: exhaust treatment device 10: liquefied gas supply room

30 :無塵室 30a :無塵室層 30b :充氣部層 30x :無塵室 30y :無塵室 30z :無塵室 31a :儲存槽 31b :儲存槽 32 :荷重元 33a :換向閥 33b :換向閥 33c :換向閥 33d :換向閥 34b :壓力感測器 35 :質流控制器 3 6a :換向閥 43 200928172 36b :換向閥 101 :質流控制器 102 :溫度感測器 103 :溫度控制回路 104 :加熱器 1 05 :液化材料氣體供應管道 106 :處理室30: clean room 30a: clean room layer 30b: inflator layer 30x: clean room 30y: clean room 30z: clean room 31a: storage tank 31b: storage tank 32: load cell 33a: reversing valve 33b: Reversing valve 33c: Reversing valve 33d: Reversing valve 34b: Pressure sensor 35: Mass flow controller 3 6a: Reversing valve 43 200928172 36b: Reversing valve 101: Mass flow controller 102: Temperature sensor 103: temperature control circuit 104: heater 105: liquefied material gas supply pipe 106: processing chamber

107:液化材料氣體儲存鋼瓶 108 :熱隔絕覆蓋材料 300 :無塵室 3 0 1 :鋼瓶櫃 302 :處理裝置 303 :層 304 :層 305 :格子層 3 06 :充氣部層 307 :管道 T a .周圍溫度107: liquefied material gas storage cylinder 108: heat insulation covering material 300: clean room 301: cylinder cabinet 302: processing device 303: layer 304: layer 305: lattice layer 3 06: inflator layer 307: pipe T a . Ambient temperature

Tb .周圍溫度 T c .液化溫度Tb. ambient temperature T c . liquefaction temperature

Tg :液相之液化氣體溫度 T 〇 :液相之液化氣體溫度Tg : liquid liquefied gas temperature T 〇 : liquid phase liquefied gas temperature

Tsetl :預設的一次液相溫度Tsetl: preset primary liquidus temperature

Tset2 :預設的液化溫度 44 200928172Tset2: preset liquefaction temperature 44 200928172

Tset3 :二次汽化溫度Tset3: secondary vaporization temperature

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Claims (1)

200928172 十、申請專利範圍: i一種液化氣體供應裝置,其特徵在於,含有具有填充 有液化氣體之容器的一次液化氣體供應設備、氣化經填充 之液化氣體的—次汽化工具、測量在上述容器中液化氣體 ^相溫度To的工具’以及控制在上述容器中液化氣體之 液相溫度To的工具, 具有以氣態供應上述液化氣體之一次管道的一次管道 〇 、 、及測里在包含5亥一次官道之管道系統内部環境溫 度的工具, 具有將以氣相供應之液化氣體再液化之再液化工具的 二次液化氣體供應設備、以液態儲存該液化氣體的儲k 具、用來再氣化以液相儲存之液化氣體的二次汽化工具、 測量在上述再液化工具中液化溫度Tc的工具、測量在上述 儲存工具中儲存溫度Ts的工具、測量在上述二次汽化工具 中液相之液化氣體溫度Tg的工具、以及控制上述液化溫度 O Tc、上述儲存溫度Ts和上述液相液化氣體溫度Tg的工具, 以及具有以氣態供應上述液化氣體至氣體消耗設備之 一次官道的二次管道系統,和測量在包括該二次管道之管 道系統内部周圍溫度Tb的工具, 此液化氣體供應裝置,其中液化氣體係從上述容器透 過管道以氣態供應至和該裝置分隔開的氣體消耗設備’其 特徵亦在於,將上述液相之液化氣體溫度丁0控制在低於周 圍溫度Ta的最低溫度,將上述液化溫度Tc或此與上述儲 存溫度Ts控制在低於液相的液化氣體溫度τ〇,以及將上述 46 200928172 液相的液化氣體溫度Tg控制在低於周圍溫度Tb的最低溫 度。 _ , 據申明專利範圍第1項之液化氣邀供應褒置,其特 徵在於上述的二次液化氣體供應設備具有再液化工具,至 少2個作用為儲存工具和二次汽化工具的組成零件,以及 允彳化上工具獨立執行且同時可從一個工具轉換到另一個 的功能。 3. 根據巾請專㈣圍第2項之液化氣體供隸置,其特 徵在於’在構成該組成零件之卫具任—者處於當前述組成 零件攸作為再液化工具和儲存工具的功能轉換到作為再汽 化工具的功能或反之時可確保該功能的狀態_,將每個工 具的控帝】S度預先轉換至上述每個y力能的控制溫度。 4. 根據中#專利範圍第卜2或3項任—項之液化氣體 供應裝置,其特徵在於具有二次汽化工具,其在上述二次 液化氣體供應設備中供應伴隨二次載體氣體的上述經儲存 液相液化氣體。 5. 根據中請專利範圍第1、2或3項任-項之液化氣體 供應裝置,其特徵在於以分支線路構成上述—次管道系 統,使得多個上述二次液化氣體供應設備可連接到上述一 次液化氣體供應設備中的一個,且允許同時供應來自上述 一次液化氣體供應設備之液化氣體至某些上述二次液化氣 體供應設備。 6·根據申請專利範圍第4項之液化氣體供應裝置,其特 徵在於以分支線路構成上述一次管道系統,使得多個上述 47 200928172 二次液化氣體供應設備可連接到上述一次液化氣體供應設 備中的一個,且允許同時供應來自上述一次液化氣體供應 設備之液化氣體至某些上述二次液化氣體供應設備。 7.—種液化氣體供應裝置,其特徵在於在將填充於容器 中氣化之液化氣體供應至分離的氣體消耗設備的液化氣體 供應方法中具有: (1) 將填充在上述容器之液化氣體一次氣化的製程, (2) 將經氣化的液化氣體透過一次管道系統一次供應的 D製程, ‘ (3) 將該以氣相供應之液化氣體再液化的製程, (4) 將該再液化之液化氣體以液相儲存的製程, (5) 將該液態之液化氣體二次氣化的製程, (6) 透過二次管道系統將氣化的液化氣體二次供應至氣 體消耗設備的製程,以及 (7) 以儲存於製程(4)中之液化氣體補充用於製程(5)之 _ 液態液化氣體的製程, 且同時其特徵在於: 控制在上述製程(1)中的液相液化氣體溫度使其低於在 上述製程(2)之一次管道系統的最低溫度, 控制在上述製程(3)的液化溫度或此液化溫度與在上述 製程(4)的儲存溫度使其低於在上述製程(1)的液相液化氣體 溫度,以及 控制在上述製程(5)的液相液化氣體溫度使其低於在上 述製程(6)之二次管道系統的最低溫度。 48 200928172 8_根據申請專利範圍第7項之液化氣體供應裝置,其特 徵在於具有下面的操作: (1-1)在液化氣體以氣態供應之前,以冷卻源冷卻上述 谷器’且控制液相液化氣體的温度使其低於正常的控制溫 度’且在同時低於一次管道系統的最低溫度和環境溫度, (1 -2)從上述容器開始以氣態供應液化氣體,以及 (1-3)加熱已被冷卻的液相液化氣體,其係藉由將該液 相液化氣體以氣態與加熱源一起供應且控制其在於正常控 ❹制溫度。 9.根據申請專利範圍第7或8項之液化氣體供應裝置, 其特徵在於具有至少2個允許進行上述製程(3)到(5)之處理 系統,在至少一個該處理系統中進行由上述製程(3)和(4)所 組成的再液化儲存模式,在至少一個其他處理系統中進行 含有上述製程(5)的再汽化模式,以及在這些結合的該製程 步驟維持一段預定的時間後,在交替地轉換這些處理系統 〇 的同時,將液化氣體以氣態連續地供應至後來階段的氣體 消耗設備。 十一、圈式: 如次頁 49200928172 X. Patent application scope: i A liquefied gas supply device characterized by comprising a primary liquefied gas supply device having a container filled with a liquefied gas, a vaporization tool for gasifying the filled liquefied gas, and measuring in the above container a tool for liquefying the gas phase temperature To and a tool for controlling the liquidus temperature To of the liquefied gas in the above-mentioned container, having a primary pipe 以, which is supplied once in a gaseous state with the liquefied gas, and measuring The tool for the internal ambient temperature of the pipeline system of the official road, the secondary liquefied gas supply device for reliquefying the liquefied gas supplied in the gas phase, and the storage device for storing the liquefied gas in a liquid state for regasification a secondary vaporization tool for storing a liquefied gas in a liquid phase, a tool for measuring a liquefaction temperature Tc in the above reliquefaction tool, a tool for measuring a temperature Ts stored in the storage tool, and measuring a liquid phase liquefaction in the secondary vaporization tool a tool for controlling the gas temperature Tg, and controlling the liquefaction temperature O Tc and the storage temperature Ts a tool for the liquid phase liquefied gas temperature Tg, and a secondary piping system having a primary passage for supplying the liquefied gas to the gas consuming apparatus in a gaseous state, and a tool for measuring a temperature Tb around the inside of the piping system including the secondary piping, The liquefied gas supply device, wherein the liquefied gas system is supplied from the above-mentioned container through the pipe in a gaseous state to the gas consuming device separated from the device, and is characterized in that the liquefied gas temperature of the liquid phase is controlled to be lower than the surrounding The lowest temperature of the temperature Ta, the liquefaction temperature Tc or the storage temperature Ts is controlled to be lower than the liquefied gas temperature τ〇 of the liquid phase, and the liquefied gas temperature Tg of the 46 200928172 liquid phase is controlled to be lower than the ambient temperature Tb. The lowest temperature. _ , according to the liquefied gas invitation supply device of claim 1 of the patent scope, characterized in that the above secondary liquefied gas supply device has a reliquefaction tool, at least two components serving as a storage tool and a secondary vaporization tool, and Allows you to perform functions that are independently executed by the tool and that can be converted from one tool to another at the same time. 3. According to the towel, please select the liquefied gas for the second item (4), which is characterized in that the function of the constitutive part is used as the reliquefaction tool and the storage tool. As a function of the re-evaporation tool or vice versa, the state of the function can be ensured, and the control degree of each tool is previously converted to the control temperature of each of the above-mentioned y-forces. 4. The liquefied gas supply device according to the above-mentioned Patent No. 2 or 3, characterized in that it has a secondary vaporization tool for supplying the above-mentioned medium accompanying the secondary carrier gas in the above secondary liquefied gas supply device. Store liquid phase liquefied gas. 5. The liquefied gas supply device according to any one of claims 1, 2 or 3 of the present invention, characterized in that the above-mentioned secondary piping system is constituted by branch lines, so that a plurality of the above-mentioned secondary liquefied gas supply devices can be connected to the above One of the primary liquefied gas supply devices, and allows simultaneous supply of the liquefied gas from the above-described primary liquefied gas supply device to some of the above secondary liquefied gas supply devices. 6. The liquefied gas supply device according to claim 4, characterized in that the primary piping system is constituted by a branch line, so that a plurality of the above-mentioned 47 200928172 secondary liquefied gas supply devices can be connected to the above-mentioned primary liquefied gas supply device. One, and allows simultaneous supply of the liquefied gas from the above-described primary liquefied gas supply device to some of the above secondary liquefied gas supply devices. 7. A liquefied gas supply device, characterized in that in a liquefied gas supply method for supplying a liquefied gas gasified in a vessel to a separate gas consuming apparatus, there is: (1) liquefied gas to be filled in the above vessel once The gasification process, (2) the D process of supplying the vaporized liquefied gas through the primary pipeline system once, ' (3) the process of reliquefying the liquefied gas supplied in the gas phase, (4) reliquefying the gas a process for storing a liquefied gas in a liquid phase, (5) a process for secondary gasification of the liquid liquefied gas, and (6) a process of supplying the vaporized liquefied gas to the gas consuming device twice through the secondary piping system, And (7) a process for replenishing the liquid liquefied gas used in the process (5) with the liquefied gas stored in the process (4), and simultaneously characterized by: controlling the temperature of the liquid liquefied gas in the above process (1) Lowering it to the lowest temperature of the primary piping system of the above process (2), controlling the liquefaction temperature of the above process (3) or the liquefaction temperature and the storage temperature of the above process (4) to make it lower than Liquidus temperature of said liquefied gas process (1), and the control in the above process (5) so that the liquidus temperature of the liquefied gas is below the minimum temperature of the secondary conduit system in the above process (6) of. 48 200928172 8_ The liquefied gas supply device according to claim 7 of the patent application, characterized in that it has the following operations: (1-1) cooling the above-mentioned barn with a cooling source and controlling the liquid phase before the liquefied gas is supplied in a gaseous state The temperature of the liquefied gas is made lower than the normal control temperature' and at the same time lower than the minimum temperature and ambient temperature of the primary piping system, (1 - 2) supplying the liquefied gas in a gaseous state from the above container, and (1-3) heating The liquid phase liquefied gas that has been cooled is supplied by the liquid phase liquefied gas in a gaseous state together with the heat source and controlled at a normal control temperature. 9. The liquefied gas supply device according to claim 7 or 8, characterized in that it has at least two processing systems which allow said processes (3) to (5) to be carried out in at least one of said processing systems a reliquefaction storage mode consisting of (3) and (4), performing a re-evaporation mode containing the above process (5) in at least one other processing system, and after maintaining the combined process steps for a predetermined period of time, While alternately converting these processing systems, the liquefied gas is continuously supplied in a gaseous state to the gas consuming equipment of a later stage. Eleven, circle: as the next page 49
TW97130636A 2007-08-23 2008-08-12 Liquefied gas supply device and supply method TW200928172A (en)

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