TW200927641A - Nanosize structures composed of valve metals and valve metal suboxides and process for producing them - Google Patents
Nanosize structures composed of valve metals and valve metal suboxides and process for producing them Download PDFInfo
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- TW200927641A TW200927641A TW097131058A TW97131058A TW200927641A TW 200927641 A TW200927641 A TW 200927641A TW 097131058 A TW097131058 A TW 097131058A TW 97131058 A TW97131058 A TW 97131058A TW 200927641 A TW200927641 A TW 200927641A
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- metal
- oxide
- valve
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 75
- 239000002184 metal Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims description 17
- 150000002739 metals Chemical class 0.000 title description 3
- 230000008569 process Effects 0.000 title description 2
- 150000004706 metal oxides Chemical group 0.000 claims abstract description 32
- 229910044991 metal oxide Inorganic materials 0.000 claims description 31
- 230000009467 reduction Effects 0.000 claims description 24
- 239000000843 powder Substances 0.000 claims description 23
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000011946 reduction process Methods 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 238000006722 reduction reaction Methods 0.000 description 33
- 239000002245 particle Substances 0.000 description 17
- 239000010410 layer Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 238000002309 gasification Methods 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 5
- 239000011888 foil Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 241000382353 Pupa Species 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 235000013405 beer Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001269 cardiogenic effect Effects 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/20—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from solid metal compounds
- B22F9/22—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from solid metal compounds using gaseous reductors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/07—Metallic powder characterised by particles having a nanoscale microstructure
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/20—Obtaining niobium, tantalum or vanadium
- C22B34/24—Obtaining niobium or tantalum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B5/00—General methods of reducing to metals
- C22B5/02—Dry methods smelting of sulfides or formation of mattes
- C22B5/04—Dry methods smelting of sulfides or formation of mattes by aluminium, other metals or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/10—Obtaining titanium, zirconium or hafnium
- C22B34/12—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08
- C22B34/1263—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining metallic titanium from titanium compounds, e.g. by reduction
- C22B34/1268—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining metallic titanium from titanium compounds, e.g. by reduction using alkali or alkaline-earth metals or amalgams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12431—Foil or filament smaller than 6 mils
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12431—Foil or filament smaller than 6 mils
- Y10T428/12438—Composite
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Powder Metallurgy (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
Description
200927641 六、發明說明: 【發明所屬之技術領域】 於100 mm之閥金 輿其製造方法。 5 ❹ 10 15 ❹ 20 本發明為關於具有一方向 屬及閥金料氧化物之_層狀結構: 【先前技術】 μ物較大之金屬基材表面 金屬次氧化物組成之微結構且W之形式呈現之金屬及 媒、觸媒擔體材料、薄膜與多孔^^之應用範圍,如觸 藥領域之植入材料、與因其大比履材料之技術領域、醫 次電池之儲電材料與電容器之陽極特性以應用於二 W0 00/67936揭露以氣相之還.200927641 VI. Description of the invention: [Technical field to which the invention pertains] The method of manufacturing a valve of 100 mm. 5 ❹ 10 15 ❹ 20 The present invention relates to a layered structure having a directional genus and a valve gold oxide: [Prior Art] A microstructure of a metal substrate having a larger surface of a larger metal substrate and a microstructure Forms of metal and media, catalyst carrier materials, thin films and porous applications, such as implant materials in the field of touch medicine, and the technical field of large-scale materials, medical storage materials and The anode characteristics of the capacitor are applied to the two W0 00/67936 to expose the gas phase.
Ca、Li與Ba ’還原閥金屬氧化物,作^屬,如峋、A卜 粉末之方法。由於氧化= 備微細分散金屬 你還成金屬之過程中造成體積之 且二 金屬形成固態氧化物造成之體積膨脹, 2二有2比表面積之高度多孔之閥金屬粉末,其特別適 合製造固怨電解質電容器。 目前已經發現,在特職還原條件下,可形成層狀結 構,並具有橫向之奈米尺度,且其起始層狀物包含相互交 替之被還原閥金屬氧化物層與被氧化之還原性金屬層。 在無機酸中將還原性金屬之氧化物溶解與濾除,可使 奈米級閥金屬結構之還原性金屬之氧化物完全去除。 取決於起始閥金屬氧化物之幾何結構,可得到於相對 粗/大尺寸結構之金屬基材上之具有一種層狀結構或條狀或 3 200927641 層狀表面結構之微細分散粉末,其具有寬度小於1〇〇 nm之 金屬和/或金屬次氧化物之條狀物或層狀物,及其間隙(層間 距離)至多可達兩倍於條寬度,取決於閥金屬氧化物與其達 到之氧化狀態。 5 【發明内容】 因此,富使用具有基本結構粒子尺寸之平均粒徑為5〇 ❹ 至2〇〇0nm,較佳為小於500 mn,更佳為小於3〇〇nm,之 微細分散閥金屬氧化物粉末時,可得到微細分散之金屬或 1〇 —欠氧化物粉末’其具有一種層狀結構,及其金屬或次氧化 物條狀物之寬度為5至1〇〇 nm,較佳為8至50 nm,尤其 較,為至多3〇nm;且其橫向尺度為4〇至5〇〇11111,比表^ 積高於20 m2/g ’較佳為高於50 m2/g。 當使用具有尺度超過,例如10 μιη’之相對大闊金屬 15 &化物基材時,可得金屬或次氧化物條狀物,其為結構具 有寬度至多100 nm,較佳為5至80 nm,尤其較佳為8至 O 5Gnm,更佳至多3G細,且其間隙為條寬度之—至兩倍之 結構。而介於條狀物間之溝槽深度為至多丨。 較大之金屬結構或基材,如線材或箔片,可藉由先以 '° 化學或是陽極方式氧化表面,之後再根據本發明内容還原 其表面,得到具有條狀之結構,其條深度決定於一 成之氧化物層厚度。 仏 更進一步地,根據本發明而得之結構,可藉由提供一 基材而得,該基材包括(例如)具㈣金屬氧化物^之其他金 4 200927641 屬或陶变,如藉由施用以氣相沉積或電 ^ 層,可根據本發明將此塗層氧化與還肩,= 化物。 化成金屬或次氧 5 ❹ 10 15 ❹ 20 依據本發明之目的所使用之閥全展知 t之…族之過渡元素之用氧化=;化物可為週期表Ca, Li and Ba' reduce the valve metal oxides, as a method of genus, such as bismuth, Ab powder. Due to oxidation = finely dispersed metal, you also become a metal in the process of volume and the volume expansion of the two metals to form a solid oxide, 2 two 2 surface area of highly porous valve metal powder, which is particularly suitable for the manufacture of solid electrolyte Capacitor. It has been found that under special-recovery conditions, a layered structure can be formed with a lateral nanometer scale, and the initial layer comprises alternating metal oxide layers and oxidized reducing metals. Floor. Dissolving and filtering the oxide of the reducing metal in the inorganic acid completely removes the oxide of the reducing metal of the nano-valve metal structure. Depending on the geometry of the starting valve metal oxide, a finely divided powder having a layered structure or strip or 3 200927641 layered surface structure on a metal substrate of a relatively coarse/large size structure having a width a strip or layer of metal and/or metal suboxide of less than 1 〇〇 nm, and its gap (interlayer distance) up to twice the strip width, depending on the valve metal oxide and its oxidized state . 5 SUMMARY OF THE INVENTION Therefore, the use of a finely dispersed valve metal oxide having an average particle diameter of a basic structure of 5 to 2 Å, preferably less than 500 mn, more preferably less than 3 Å, is used. When the powder is obtained, a finely dispersed metal or a ruthenium-underoxide powder having a layered structure and a metal or suboxide strip having a width of 5 to 1 〇〇 nm, preferably 8 may be obtained. Up to 50 nm, especially, at most 3 〇 nm; and its lateral dimension is 4 〇 to 5 〇〇 11111, and the specific volume is higher than 20 m 2 /g ' preferably higher than 50 m 2 /g. When a relatively large metal 15 & substrate having a scale exceeding, for example 10 μηη′, is used, a metal or suboxide strip having a width of at most 100 nm, preferably 5 to 80 nm, is obtained. It is particularly preferably 8 to 5 5 nm, more preferably up to 3 G fine, and the gap is a structure of the strip width - to twice the structure. The depth of the groove between the strips is at most 丨. Larger metal structures or substrates, such as wires or foils, can be obtained by first chemically or anodically oxidizing the surface, and then reducing the surface according to the present invention to obtain a strip-like structure with a strip depth. Determined by the thickness of the oxide layer. Further, the structure according to the present invention can be obtained by providing a substrate comprising, for example, other gold 4 200927641 genus or ceramics having a (4) metal oxide, such as by application. By vapor deposition or electro-coating, the coating can be oxidized and returned to the shoulder according to the invention. Chemical or secondary oxygen 5 ❹ 10 15 ❹ 20 Valves used in accordance with the purpose of the present invention are fully disclosed.
Ta、Mo、W與Hf,與其合金(混合氧化物1和^ V、、Nb、 Zf、Nb和Ta較佳,尤其是以Nb與τ ,以Tl、Ta, Mo, W and Hf, and alloys thereof (mixed oxides 1 and ^V, Nb, Zf, Nb and Ta are preferred, especially Nb and τ, with Tl,
Nb〇2和Ta2〇5則為特別偏好之起始氧化物、 Nb2〇5、 得之反應生成物以起始氧化物之金屬為較佳艮:=戶: 物之較低氧㈣氧化物(:欠氧化物)亦可 種特別偏好之彻、絲為具有金屬 氧化物,其化學式為Nb0x,盆中o?n,銳_次 _與麵(Ta)外,其亦、u ’除金屬銳 尤其較佳範圍為至多5V,更佳夕範圍 至,還原性金屬,於本發明中可使 m’與其合金。較佳之材料可為吨、&二匕要B =j原性金;|聽始之氧化物活 _、 M#A1之共溶合金為較佳選擇。 特另i疋 圍高’其特徵為還原性金屬之含量範 中造成之摻雜之故Γ疋500ppm’其原因為還原過程 〇〇-^==^\尺度結構之方法’基本上和wo 田似,為以蒸氣形式之還原性金屬將金屬 5 200927641 氧化物還原。在這裡將欲被還原成粉末形式之閥金屬氧化 物,在反應器中與還原性金屬蒸氣接觸。而還原性金屬藉 由載氣氣流之作用被揮發與傳播,如一般在900至1200 °C 之同’皿下,以氩氣通過在網上或是坩鋼中之閥金屬氧化物 5 粉末,而一般持溫時間從30分鐘至數小時。由於閥金屬氧 化物之莫耳體積約為其對應閥金屬的二至三倍,所以在還 原過程中體積有相當的減少。在還原程序中,形成其中沉 ❹ 積有遘原性金屬之氧化物之高度多孔之海綿狀結構。而由 於還原性金屬之氧化物莫耳體積高於閥金屬氧化物與閥金 10 屬莫耳體積間之變化,所以當其混入孔隙中時,並有殘餘 應力之生成。結構中還原性金屬之氧化物可藉由將其溶解 而從結構中移除,並可得到高度多孔之金屬粉末。其還原 反應機制、孔洞之生成與分佈之研究,敘述如下:從還原 閥金屬氧化物粒子或基材表面上之小反應核點開始,具有 15 奈米尺度之層狀結構,在閥金屬/闕金屬氧化物起始之反應 相中之反應剷段之後形成,這些層一開始定向垂直於在靠 © 近表面之粒子/基材區域之表面,然而,當反應前段移向氧 化物粒子/基材深部時,層狀物之方向與尺度則決定於閥金 屬氧化物中主要粒子之晶體方向與尺度與反應條件。閥金 20 屬氧化物晶粒中之一定數量晶格面被化學等量數之閥金屬 與還原性金屬之氧化物之晶格面取代。這些實際上因其存 在高界面應力而呈現非常強烈地不利的奈米大小層狀結構 依然可被製備及變成可行,此乃由於還原為強烈之放熱反 應及至少部分之過多能量未以熱之形式逸散,但“投入,,至 6 200927641 5Nb〇2 and Ta2〇5 are particularly preferred starting oxides, Nb2〇5, and the resulting product is preferably a metal of the starting oxide: = household: lower oxygen (tetra) oxide ( :Oxide) can also be specially selected to have a special preference, the wire has a metal oxide, the chemical formula is Nb0x, the basin is o?n, the sharp_time_ and the surface (Ta), and also the u 'except metal sharp A particularly preferred range is up to 5 V, more preferably to a reducing metal, in which m' can be alloyed. The preferred material may be ton, & bis, B = j original gold; | oxime oxide active _, M # A1 co-dissolved alloy is preferred. Specially, it is characterized by the doping of 500ppm in the content of the reducing metal. The reason is that the reduction process 〇〇-^==^\ scale structure method 'basically and wo field Similarly, the metal 5 200927641 oxide is reduced by a reducing metal in the form of a vapor. Here, the valve metal oxide to be reduced to a powder form is contacted with a reducing metal vapor in the reactor. The reducing metal is volatilized and propagated by the action of the carrier gas stream, such as generally at 900 to 1200 ° C under the same dish, with argon gas passing through the valve metal oxide 5 powder on the wire or in the steel, The general temperature holding time is from 30 minutes to several hours. Since the valve metal oxide has a molar volume of about two to three times that of its corresponding valve metal, there is a considerable reduction in volume during the reduction process. In the reduction procedure, a highly porous sponge-like structure in which an oxide of a bismuth metal is deposited is formed. Since the molar volume of the oxide of the reducing metal is higher than the volume of the metal oxide of the valve metal oxide and the valve gold, the residual stress is generated when it is mixed into the pores. The oxide of the reducing metal in the structure can be removed from the structure by dissolving it, and a highly porous metal powder can be obtained. The reduction reaction mechanism, the formation and distribution of pores are described as follows: from the metal oxide particles of the reduction valve or the small reaction nuclei on the surface of the substrate, a layered structure with a scale of 15 nm is used in the valve metal/阙Formed after the reaction shovel in the initial reaction phase of the metal oxide, the layers are initially oriented perpendicular to the surface of the particle/substrate region on the near surface, however, when the reaction front moves toward the oxide particles/substrate In the deep part, the direction and dimension of the layer are determined by the crystal orientation and scale of the main particles in the valve metal oxide and the reaction conditions. A certain number of lattice planes in the oxide metal grains of the valve gold are replaced by a chemically equivalent number of valve crystals of the metal and the oxide of the reducing metal. These nano-sized layered structures, which are actually very strongly unfavorable due to their high interfacial stress, can still be prepared and become feasible due to the reduction of the intense exothermic reaction and at least part of the excess energy not in the form of heat. Dissipated, but "input, to 6 200927641 5
10 15 ❹ 、”構之形成’使其快速之反應動力可^ 士 平坦之界面可作為還原性金屬原日^構中很多 其允許快速之錢,顧此其造錄換言之 地降低反應系統之總能量。然而,包含遥且有效 屬氧化物之層狀結構只有在介穩態時形原性金 後,使其形咸較低能量之結構狀態。在^ ^入熱能 長之熱處理時間與固定的反應條件(如溫還2,相對 蒸氣壓r正常,,實施,1纴 逷原性金屬之 太乎尺無可避免會發生,換令之, 奈水尺寸層1纟#_換歧粗大且相互交 、。之 含閥金f區域與_性金屬氧化物之區域 構’其包 目則發現’在發生結構轉變前,若知 物冷卻降至某一溫声, 啤侏還原產 釗厗㈣士播τ 度 ?皿度層狀結構維持穩定, 則層狀、、、。構可以被冷;東。根據本發明,還原條件可以確 使得還原可以在短時間内均勻的進行。換言之,若使用於 狀起始氧化物,t還原程序完成之後,在氧化物與^ 物之粉末床内儘可能立刻快速地冷卻。 豕度 基於此項理由,使用較低厚度之粉末床為較佳,以確 保還原性金屬之蒸氣能均句渗人粉末床中。粉末床之厚户 以小於lcm較佳,尤其是小於0.5 cm為更佳。 人 20 此外,可藉由提供一還原性金屬蒸氣較長之自由徑長 度’確保還原性金屬蒸氣可均勻滲人粉末床中。根據本發 明,還原反應因此較適合於低壓下進行,更佳是在無載氣 之條件下進行。還原反應特別適合在無氧環境下,還原性 金屬蒸氣之蒸氣壓為1〇-2至〇·4 bar時進行,更適於在〇 7 200927641 佳為小於cut 低載氣壓力為至多G.2bar,更 是)純氣:如氣氣與氛氣何=氮適氣當之載氣種類可細別 原因構*度之增加速率,隨著其深度提升而降低, 已還原之金屬層狀物與在金屬層狀物間形成之10 15 ❹ , "Formation of the structure" makes it a fast reaction power. The flat interface can be used as a reducing metal in the original day. Many of them allow quick money, so in the case of its creation, the total reaction system is reduced. Energy. However, the layered structure containing the distant and effective oxides only forms a low-energy structural state after the metamorphic gold, and then forms a salty lower energy structure. The heat treatment time and the fixed reaction are long. Conditions (such as temperature is 2, relative vapor pressure r is normal, implementation, 1 纴逷 original metal is too large to avoid the occurrence of the rule, change the order, Nai water size layer 1 纟 #_ change the coarse and mutual The area of the valve containing the gold f region and the _ metal oxide structure's package has found that 'before the structural transformation, if the object cools down to a certain warm sound, the beer is reduced to the pupa (four) The layered structure of the zirconia is stable, and the layered structure can be cooled; east. According to the invention, the reducing condition can be sure that the reduction can be carried out uniformly in a short time. In other words, if used Starting oxide, t reduction procedure is completed After that, it is cooled as quickly as possible in the powder bed of the oxide and the substance. For this reason, it is preferable to use a powder bed of a lower thickness to ensure that the vapor of the reducing metal can be infiltrated into the powder. In the bed, the thickness of the powder bed is preferably less than 1 cm, especially less than 0.5 cm. Person 20 In addition, the reducing metal vapor can be uniformly ensured by providing a long free path length of the reducing metal vapor. In the infiltrated powder bed, according to the present invention, the reduction reaction is therefore more suitable for carrying out at a low pressure, more preferably under the condition of no carrier gas. The reduction reaction is particularly suitable for the vapor pressure of the reducing metal vapor in an oxygen-free environment. 1〇-2 to 〇·4 bar, more suitable for 〇7 200927641 Good for less than cut Low carrier gas pressure for at most G.2bar, more) Pure gas: such as gas and atmosphere? When the type of carrier gas can be fined, the rate of increase of the structure is reduced as the depth is increased, and the reduced metal layer is formed between the metal layer and the metal layer.
10 1510 15
現當界面之擴散路徑隨之增長。目前已發 轉變。…原之*度至多達1 μΠ1時’基本上無層狀結構之 根據本發明’所使狀閥金屬氧化物粉末,其主要結 構粒子大小(晶粒尺度)之最小剖面尺度較佳不超過2叫, 、不超1 更佳,以平均不超過〇 5為特佳。若閥 金屬氧化物粉末之主要結構具有相當小粒徑時,其可被用 於多孔之燒結團聚物。有利於欲強力燒結一起之主要粒 子,但其中之開放孔之階級性結構網絡之存在於聚集的主 要粒子間,因而其開放孔之孔洞大小分布可使還原性金屬 之蒸氣直接到達且還原很大部分之主要粒子表面。 雖然其效果明顯小於孔道,相鄰的主要粒子間的晶界 也能加速擴散。因此,除了小的主要粒子與開放之孔度外, 有利於在聚集的閥金屬氧化物粒子中欲形成的主要粒子間 之高比例之晶界。上述可藉由主要粒子粒徑之最適化及氧 化物前驅物之沉殿形成氫氧化物與氫氧化物之緞燒中之燒 結,以形成閥金屬氧化物。烺燒進行之溫度以4〇〇至700 °C 為較佳,特別是以500至600 °C為更佳。 在製備具有層狀表面結構之金屬箔與線中,以使用於 8 20 200927641 金屬箔或線表面具有一氧化物層厚度小於丨μπι為較佳,以 小於0.5 μιη為更佳。 在低氣壓下之還原反應之後,其進行時間可由數分鐘 至數小時,較佳為U)至9G分鐘,決定於所使用之還= 5 金屬蒸氣或金屬蒸氣混合物與其蒸氣壓,還原反應之停止 可由中斷還原性金屬蒸氣之供應,和怏速冷卻已還原之閃 金屬至溫度小於loot:’以穩定閥金屬或閥金屬次氧化物^ 與還原性金屬氧化物之奈米層狀結構,不同方向之鄰近芦 狀結構之燒結並形成可接受之稍粗大尺寸。冷卻程序了、 10 藉由導入保護性氣體(冷卻氣體),如氩氣與氦i為:佳 快速增壓之方式進行冷卻。較適當之程序為在3分鐘内A 卻至300 °C,之後另一個3分鐘冷卻至2〇〇,在另外之令 分鐘内冷卻至1〇〇 °C。 根據本發明,還原程序之進行以較低溫之條件為佳, 15 目的為減少奈米層狀結構尺寸之粗大化。閥金屬氣彳匕物 還原溫度由500至850 °C,較佳為小於750 V,牡u,之 ^ 将別是小 1 於650 °C為更佳。此處,實際之溫度應超過還原反應之 始溫度,因為還原反應為放熱反應之故。 於此發明中,為了避免包含反應產物與氧化還原性金 20 屬氧化物(其在還原反應開始時形成)之奈米層狀結構、 完整或尺寸增大,不同之量測方式可採選擇或是結合方= 例如,於高還原溫度時,藉由提供還原性金屬蒸 有效且快速之收集,可充分確保短的還原時間,例如=1 小之起始金屬氧化物粉末床和/或一低的載氣壓力,二 • 換吕 9 200927641 之 了力:其還原性金屬蒸氣之原子自由路徑。 時間。面’在低的還原溫度下,可以接受較長之還原 只需較不嚴苛 構二:閥金屬氧化物團聚物, 在還原反應完隸已彻^mm狀結構。 的通入氧氣或空氣使其純化===逐步 Ο 10 15 ❹ 如以颇齡,如以無機酸之方式,例 鹽酸或其混合物’再以去離子水清洗至中性, 要灶ί還f微細分散粉末之例子中,其包含具有扁平之主 要、、構’轉縣⑽錄之形式長至其它結構中。 心原性金屬氧化物鶴除後,獨立之闊金屬層狀結 ,仍、准持幾何結構上之穩定,因其與鄰近之層狀物充分之 燒、⑺’通常藉_立層之尾_成*同方向之層狀結構, 原先(多晶)之閥金屬氧化物顆粒因此以被轉化成聚集的閥 金屬顆粒’其主要粒子包含不同方向之層狀結構群,且其 互相燒結。總之,一種穩定、相互貫穿之金屬結構與“均一 (flat)”之孔洞因此形成。 【實施方式】 圖1為圖示說明進行本發明程序之裝置,廣泛地以1 表示反應器,其具有一還原腔室2。參照數字3表示溫度控 制器,包含加熱線圈與冷卻線圈。保護或充填氣體或是冷 20 200927641 卻氣體藉由一閥導入還原反應腔室中,其導入方向為箭號 4。還原反應腔室經抽真空或是氣體移除之方向為箭號5。 還原腔室2與還原性金屬之氣化腔室6接合,並另外提供 一分開的加熱源7。氣化腔室與還原腔室藉由閥區域8作有 5 〇 10 15 20 效之熱隔絕。閥金屬氧化物以薄粉末床之方式於船形體10 中被還原。若使用閥金屬氧化物箔或線或是具有一包含閥 金屬氧化物表面之箔或線,以垂直懸掛並平行於還原腔室 中之還原性金屬蒸氣之流動方向為較佳。在船形體9中之 還原性金屬被加熱至一可提供所需之蒸氣壓之溫度。 於船形體中氧化物粉末被導入具有5 mm高之粉末床 中,含有鎂屑之船形體置於氣化腔室,該反應器充填氬氣。 之後還原腔室加熱至還原溫度,且將壓力抽真空至〇1 bar。隨後氣化腔室則加熱至8〇〇。〇,此時鎖蒸氣壓(靜態) 約0.04 bar。30分鐘後,關閉還原腔室與氣化腔室之加熱 源,而藉由從200 bar降壓冷卻之氬氣通入還原腔室持續另 一段時間’在同時還原腔室之腔壁則以水冷卻之。 圖2、3與4為根據本發明還原之钽粉,在經由離子束 聚焦製備反應產物後,以不同倍率下之穿透式電子顯微鏡 影像。圖中之暗的條狀物為鈕之層狀物,而較淡色之條= 物為氧化鎂層狀物《不同方向之層狀物結構則對應於^因 起始五氧化鈕之晶向。 ’、、同 【圖式簡單說明】 圖1為圖示說明進行本發明程序之裝置, 11 200927641 圖2為根據本發明還原之鉅粉在經由離子束聚焦製備 反應產物後之穿透式電子顯微鏡影像。 圖3為根據本發明還原之鉅粉在經由離子束聚焦製備 反應產物後之穿透錢子|貞微鏡影像。 反庫發明_之峰在經由離子束聚焦製備 反應產物奴穿透錢子_微鏡影像。The diffusion path of the current interface grows. A change has been made. ...when the original degree is up to 1 μΠ1, the substantially non-layered structure of the valve metal oxide powder according to the invention has a minimum cross-sectional dimension of the main structural particle size (grain size) of preferably not more than 2 Calling, not exceeding 1 is better, and the average is not more than 〇5. If the main structure of the valve metal oxide powder has a relatively small particle size, it can be used for the porous sintered agglomerate. It is beneficial to the main particles that want to be strongly sintered together, but the class structure network of the open pores exists between the main particles of the aggregation, so the pore size distribution of the open pores can directly reach the vapor of the reducing metal and restore a large part. The main particle surface. Although the effect is significantly smaller than that of the pores, the grain boundaries between adjacent major particles can accelerate diffusion. Therefore, in addition to the small primary particles and the open porosity, a high proportion of grain boundaries between the main particles to be formed in the aggregated valve metal oxide particles is favored. The above can be formed by the optimization of the particle size of the main particles and the sintering of the hydroxide precursor with the hydroxide precursor to form a valve metal oxide. The temperature at which the simmering is carried out is preferably 4 to 700 ° C, particularly preferably 500 to 600 ° C. In the preparation of the metal foil and the wire having the layered surface structure, it is preferable that the metal foil or the wire surface used has a thickness of less than 丨μπι, more preferably less than 0.5 μm. After the reduction reaction at a low pressure, the progress time may be from several minutes to several hours, preferably from U) to 9G minutes, depending on the use of the metal vapor or metal vapor mixture and its vapor pressure, and the reduction reaction is stopped. Can be interrupted by the supply of reducing metal vapor, and idle cooling of the reduced flash metal to a temperature less than loot: 'to stabilize the valve metal or valve metal suboxide ^ and the nanostructure of the reducing metal oxide, different directions The adjacent reed structure is sintered and forms an acceptable slightly larger size. The cooling procedure, 10 is carried out by introducing a protective gas (cooling gas) such as argon and 氦i for: fast pressurization. A more appropriate procedure is to cool A to 300 °C in 3 minutes, then cool to 2 另一个 in another 3 minutes, and cool to 1 °C in another minute. According to the present invention, the reduction procedure is preferably carried out at a lower temperature, and the purpose of the reduction is to reduce the size of the nanolayer structure. The valve metal gas reduction temperature is from 500 to 850 ° C, preferably less than 750 V, and that it is preferably less than 650 ° C. Here, the actual temperature should exceed the initial temperature of the reduction reaction because the reduction reaction is an exothermic reaction. In the present invention, in order to avoid the nano-layered structure, integrity or size increase of the reaction product and the redox gold 20-based oxide which is formed at the beginning of the reduction reaction, different measurement methods may be selected or Is the binding side = for example, at a high reduction temperature, by providing an efficient and rapid collection of reducing metal vaporization, a short reduction time can be sufficiently ensured, for example, a small starting metal oxide powder bed and/or a low The carrier gas pressure, two • Lu Lu 9 200927641 The force: its atomic free path of reducing metal vapor. time. At the low reduction temperature, the surface can be subjected to a longer reduction. It requires less stringent structure 2: the valve metal oxide agglomerate, after the reduction reaction has been completed. Purify by introducing oxygen or air ===Stepwise Ο 10 15 ❹ If it is aged, such as by means of inorganic acid, such as hydrochloric acid or a mixture thereof, then rinse with deionized water until neutral, In the example of the finely divided powder, it is composed of a main type having a flat shape, and the structure of the structure of the 'Tianxian County (10) is long into other structures. After the removal of the cardiogenic metal oxide crane, the independent wide metal layered junction is still stable in the quasi-metallic structure, because it is fully burned with the adjacent layer, (7) 'usually borrowing the tail of the vertical layer _ In the layered structure in the same direction, the original (polycrystalline) valve metal oxide particles are thus converted into aggregated valve metal particles whose main particles contain layered structural groups in different directions, and which are sintered to each other. In summary, a stable, interpenetrating metal structure and a "flat" hole are thus formed. [Embodiment] FIG. 1 is a view showing an apparatus for carrying out the procedure of the present invention, which broadly denotes a reactor having a reduction chamber 2. Reference numeral 3 denotes a temperature controller including a heating coil and a cooling coil. Protection or filling of gas or cold 20 200927641 However, the gas is introduced into the reduction reaction chamber by a valve, and its introduction direction is arrow 4. The direction in which the reduction reaction chamber is evacuated or the gas is removed is arrow 5. The reduction chamber 2 is joined to the gasification chamber 6 of the reducing metal and additionally provides a separate heating source 7. The gasification chamber and the reduction chamber are thermally insulated by the valve region 8 for 5 〇 10 15 20 . The valve metal oxide is reduced in the boat 10 in the form of a thin powder bed. If a valve metal oxide foil or wire or a foil or wire having a valve metal oxide surface is used, it is preferred to hang vertically and parallel to the flow direction of the reducing metal vapor in the reduction chamber. The reducing metal in the boat 9 is heated to a temperature which provides the desired vapor pressure. In the hull, the oxide powder was introduced into a powder bed having a height of 5 mm, and a boat-shaped body containing magnesium chips was placed in a gasification chamber, and the reactor was filled with argon gas. The reduction chamber is then heated to the reduction temperature and the pressure is evacuated to 〇1 bar. The gasification chamber is then heated to 8 Torr. 〇, at this time the lock vapor pressure (static) is about 0.04 bar. After 30 minutes, the heating source of the reduction chamber and the gasification chamber was turned off, and the argon gas cooled down from the 200 bar was introduced into the reduction chamber for another period of time 'at the same time, the chamber wall of the reduction chamber was water. Cool it down. Figures 2, 3 and 4 are transmission electron microscope images at different magnifications after preparation of the reaction product by ion beam focusing in accordance with the present invention. The dark strip in the figure is the layer of the button, and the lighter strip = the layer of magnesium oxide. The layer structure in different directions corresponds to the crystal orientation of the starting pentoxide button. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view illustrating a device for carrying out the procedure of the present invention, 11 200927641 FIG. 2 is a transmission electron microscope of a reduced macro powder prepared by ion beam focusing in accordance with the present invention. image. Fig. 3 is a diagram showing the penetration of a giant powder according to the present invention after preparation of a reaction product by ion beam focusing. The anti-living invention _ peak is prepared by ion beam focusing to prepare the reaction product slave penetrating money _ micro-mirror image.
1010
【主要元件符號說明】 1反應器 2環原腔室 3溫度控制器 6氣化腔室 7加熱源 8閥區域 9船形體 10船形體[Main component symbol description] 1 reactor 2 ring original chamber 3 temperature controller 6 gasification chamber 7 heating source 8 valve area 9 boat body 10 boat body
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DE102007038581A DE102007038581A1 (en) | 2007-08-16 | 2007-08-16 | Valve metal structure and valve metal sub-oxide structure, have lateral dimension of 5 to 10 nanometers and are expanded in streaky or flat manner and valve metal structures are in form of foils or wires |
DE102007057761A DE102007057761A1 (en) | 2007-11-30 | 2007-11-30 | Strip-like or sheet-like valve metal and valve metal suboxide structures in the form of surface strip structures, foils, or wires, useful e.g. as catalysts and support materials for catalysts, have specified transverse dimension |
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BE1015823A3 (en) * | 2003-12-17 | 2005-09-06 | Ct Rech Metallurgiques Asbl | Process for coating a surface by metal layer ultrafine. |
DE102004020052B4 (en) * | 2004-04-23 | 2008-03-06 | H.C. Starck Gmbh | Process for the preparation of niobium and tantalum powders |
DE102004023161A1 (en) * | 2004-05-07 | 2005-11-24 | Eilenburger Elektrolyse- Und Umwelttechnik Gmbh | Electrolysis cell with multilayer expanded metal cathodes |
US20050274226A1 (en) * | 2004-06-14 | 2005-12-15 | Qingmin Cheng | Method of preparing aluminum nanorods |
JP2006249449A (en) * | 2005-03-08 | 2006-09-21 | Art Kagaku:Kk | Method for producing metal tantalum nanosheet and metal tantalum nanosheet produced by the method |
CN100443851C (en) * | 2005-07-01 | 2008-12-17 | 松下电器产业株式会社 | Aluminium foil for heat exchanger, its making method and heat exchanger using same and air conditioner |
JP4788880B2 (en) * | 2005-07-22 | 2011-10-05 | 独立行政法人物質・材料研究機構 | Method for producing valve metal oxide nanostructure |
US7988760B2 (en) * | 2007-03-13 | 2011-08-02 | Global Tungsten & Powders Corp. | Method of making nanocrystalline tungsten powder |
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2008
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- 2008-07-23 RU RU2010109437/02A patent/RU2493939C2/en not_active IP Right Cessation
- 2008-07-23 CN CN200880103432A patent/CN101778683A/en active Pending
- 2008-07-23 MX MX2010001586A patent/MX2010001586A/en active IP Right Grant
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JP2010537040A (en) | 2010-12-02 |
MX2010001586A (en) | 2010-03-15 |
KR101530727B1 (en) | 2015-06-22 |
US20110123822A1 (en) | 2011-05-26 |
RU2493939C2 (en) | 2013-09-27 |
WO2009021820A1 (en) | 2009-02-19 |
JP5542672B2 (en) | 2014-07-09 |
EP2188081A1 (en) | 2010-05-26 |
RU2010109437A (en) | 2011-09-27 |
CN104889381A (en) | 2015-09-09 |
CN101778683A (en) | 2010-07-14 |
TWI477437B (en) | 2015-03-21 |
KR20100065280A (en) | 2010-06-16 |
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