TWI477437B - Nanosize structures composed of valve metals and valve metal suboxides and process for producing them - Google Patents

Nanosize structures composed of valve metals and valve metal suboxides and process for producing them Download PDF

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TWI477437B
TWI477437B TW097131058A TW97131058A TWI477437B TW I477437 B TWI477437 B TW I477437B TW 097131058 A TW097131058 A TW 097131058A TW 97131058 A TW97131058 A TW 97131058A TW I477437 B TWI477437 B TW I477437B
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valve metal
metal
valve
oxide
reducing
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TW200927641A (en
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Gerhard Gille
Christoph Schnitter
Holger Brumm
Helmut Haas
Robert Mueller
Manfred Bobeth
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Starck H C Gmbh
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00Making metallic powder or suspensions thereof
    • B22F9/16Making metallic powder or suspensions thereof using chemical processes
    • B22F9/18Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
    • B22F9/20Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from solid metal compounds
    • B22F9/22Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from solid metal compounds using gaseous reductors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/07Metallic powder characterised by particles having a nanoscale microstructure
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22BPRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00Obtaining refractory metals
    • C22B34/20Obtaining niobium, tantalum or vanadium
    • C22B34/24Obtaining niobium or tantalum
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22BPRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00General methods of reducing to metals
    • C22B5/02Dry methods smelting of sulfides or formation of mattes
    • C22B5/04Dry methods smelting of sulfides or formation of mattes by aluminium, other metals or silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • H01G9/04Electrodes or formation of dielectric layers thereon
    • H01G9/048Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052Sintered electrodes
    • H01G9/0525Powder therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00Supplementary information concerning processes or compositions relating to powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22BPRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00Obtaining refractory metals
    • C22B34/10Obtaining titanium, zirconium or hafnium
    • C22B34/12Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08
    • C22B34/1263Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining metallic titanium from titanium compounds, e.g. by reduction
    • C22B34/1268Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining metallic titanium from titanium compounds, e.g. by reduction using alkali or alkaline-earth metals or amalgams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • H01G9/04Electrodes or formation of dielectric layers thereon
    • H01G9/048Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052Sintered electrodes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12431Foil or filament smaller than 6 mils
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12431Foil or filament smaller than 6 mils
    • Y10T428/12438Composite

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  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
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Description

由閥金屬及閥金屬次氧化物所組成之奈米結構及製造彼等之方法Nanostructure composed of valve metal and valve metal suboxide and methods of manufacturing same

本發明為關於具有一方向之尺寸小於100nm之閥金屬及閥金屬次氧化物之新穎層狀結構,與其製造方法。SUMMARY OF THE INVENTION The present invention is directed to a novel layered structure having valve metal and valve metal suboxide having a dimension of less than 100 nm in one direction, and a method of making the same.

以粉末或較大之金屬基材表面區之形式呈現之金屬及金屬次氧化物組成之微結構具備多樣之應用範圍,如觸媒、觸媒擔體材料、薄膜與多孔過濾材料之技術領域、醫藥領域之植入材料、與因其大比表面積之特性以應用於二次電池之儲電材料與電容器之陽極材料。The microstructure of the metal and metal suboxide present in the form of a powder or a larger metal substrate surface region has various application fields, such as a catalyst, a catalyst carrier material, a film and a porous filter material, Implant materials in the medical field, and anode materials for storage materials and capacitors for secondary batteries due to their large specific surface area characteristics.

WO 00/67936揭露以氣相之還原性金屬,如Mg、Al、Ca、Li與Ba,還原閥金屬氧化物,作為製備微細分散金屬粉末之方法。由於氧化物還原成金屬之過程中造成體積之收縮,加上還原性金屬形成固態氧化物造成之體積膨脹,形成具有高比表面積之高度多孔之閥金屬粉末,其特別適合製造固態電解質電容器。WO 00/67936 discloses reducing metal oxides in the gas phase, such as Mg, Al, Ca, Li and Ba, as a method of preparing finely divided metal powders. Due to the volume shrinkage caused by the reduction of the oxide into a metal, and the volume expansion caused by the formation of the solid oxide by the reducing metal, a highly porous valve metal powder having a high specific surface area is formed, which is particularly suitable for the manufacture of a solid electrolytic capacitor.

目前已經發現,在特別的還原條件下,可形成層狀結構,並具有橫向之奈米尺度,且其起始層狀物包含相互交替之被還原閥金屬氧化物層與被氧化之還原性金屬層。It has now been found that under special reducing conditions, a layered structure can be formed with a lateral nanometer scale, and the starting layer comprises alternating reducing metal oxide layers and oxidized reducing metals. Floor.

在無機酸中將還原性金屬之氧化物溶解與濾除,可使奈米級閥金屬結構之還原性金屬之氧化物完全去除。Dissolving and filtering the oxide of the reducing metal in the inorganic acid completely removes the oxide of the reducing metal of the nano-valve metal structure.

取決於起始閥金屬氧化物之幾何結構,可得到於相對粗/大尺寸結構之金屬基材上之具有一種層狀結構或條狀或層狀表面結構之微細分散粉末,其具有寬度小於100nm之金屬和/或金屬次氧化物之條狀物或層狀物,及其間隙(層間距離)至多可達兩倍於條寬度,取決於閥金屬氧化物與其達到之氧化狀態。Depending on the geometry of the starting valve metal oxide, a finely divided powder having a layered structure or a strip or layered surface structure on a metal substrate having a relatively coarse/large size structure having a width of less than 100 nm can be obtained. The strips or layers of metal and/or metal suboxide, and their interstitials (interlayer distance) may be up to two times the strip width, depending on the oxidation state of the valve metal oxide and it.

因此,當使用具有基本結構粒子尺寸之平均粒徑為50至2000nm,較佳為小於500nm,更佳為小於300nm,之微細分散閥金屬氧化物粉末時,可得到微細分散之金屬或次氧化物粉末,其具有一種層狀結構,及其金屬或次氧化物條狀物之寬度為5至100nm,較佳為8至50nm,尤其較佳為至多30nm;且其橫向尺度為40至500nm,比表面積高於20m2 /g,較佳為高於50m2 /g。Therefore, when a finely dispersed valve metal oxide powder having an average particle diameter of a basic structure of 50 to 2000 nm, preferably less than 500 nm, more preferably less than 300 nm is used, a finely dispersed metal or suboxide can be obtained. a powder having a layered structure, and a metal or suboxide strip having a width of 5 to 100 nm, preferably 8 to 50 nm, particularly preferably at most 30 nm; and a lateral dimension of 40 to 500 nm, The surface area is higher than 20 m 2 /g, preferably higher than 50 m 2 /g.

當使用具有尺度超過,例如10μm,之相對大閥金屬氧化物基材時,可得金屬或次氧化物條狀物,其為結構具有寬度至多100nm,較佳為5至80nm,尤其較佳為8至50nm,更佳至多30nm,且其間隙為條寬度之一至兩倍之結構。而介於條狀物間之溝槽深度為至多1μm。When a relatively large valve metal oxide substrate having a scale exceeding, for example 10 μm, is used, a metal or suboxide strip having a width of at most 100 nm, preferably 5 to 80 nm, particularly preferably 8 to 50 nm, more preferably up to 30 nm, and the gap is one to two times the width of the strip. The depth of the groove between the strips is at most 1 μm.

較大之金屬結構或基材,如線材或箔片,可藉由先以化學或是陽極方式氧化表面,之後再根據本發明內容還原其表面,得到具有條狀之結構,其條深度決定於一開始形成之氧化物層厚度。Larger metal structures or substrates, such as wires or foils, can be oxidized by chemical or anodic methods, and then reduced in accordance with the teachings of the present invention to obtain a strip-like structure, the strip depth being determined by The thickness of the oxide layer formed at the beginning.

更進一步地,根據本發明而得之結構,可藉由提供一基材而得,該基材包括(例如)具有閥金屬氧化物層之其他金屬或陶瓷,如藉由施用以氣相沉積或電沉積得到之閥金屬層,可根據本發明將此塗層氧化與還原,形成金屬或次氧化物。Still further, the structure according to the present invention can be obtained by providing a substrate comprising, for example, another metal or ceramic having a valve metal oxide layer, such as by vapor deposition or by application. Electrodeposition of the resulting valve metal layer can be oxidized and reduced in accordance with the present invention to form a metal or suboxide.

依據本發明之目的所使用之閥金屬氧化物可為週期表中之4至6族之過渡元素之氧化物,如Ti、Zr、V、Nb、Ta、Mo、W與Hf,與其合金(混合氧化物)和Al,以Ti、Zr、Nb和Ta較佳,尤其是以Nb與Ta為更佳。Nb2 O5 、NbO2 和Ta2 O5 則為特別偏好之起始氧化物。根據本發明所得之反應生成物以起始氧化物之金屬為較佳。起始閥氧化物之較低氧化態氧化物(次氧化物)亦可以還原產物獲得。一種特別偏好之還原產物為具有金屬般導電特性之鈮(Nb)次氧化物,其化學式為NbOx,其中0.7<x<1.3;除金屬鈮(Nb)與鉭(Ta)外,其亦適合作為電容器之陽極材料;而根據本發明之材料,尤其適用於至多10V之低活化電位範圍,尤其較佳範圍為至多5V,更佳範圍則為至多3V。The valve metal oxide used in accordance with the purpose of the present invention may be an oxide of a transition element of Groups 4 to 6 of the periodic table, such as Ti, Zr, V, Nb, Ta, Mo, W and Hf, and an alloy thereof (mixed) Oxide) and Al are preferably Ti, Zr, Nb and Ta, especially Nb and Ta. Nb 2 O 5 , NbO 2 and Ta 2 O 5 are particularly preferred starting oxides. The reaction product obtained according to the present invention is preferably a metal of a starting oxide. The lower oxidation state oxide (suboxide) of the starting valve oxide can also be obtained by reducing the product. A particularly preferred reduction product is a niobium (Nb) suboxide having metallic conductivity characteristics, which has a chemical formula of NbOx, wherein 0.7 < x <1.3; in addition to metal niobium (Nb) and tantalum (Ta), it is also suitable as The anode material of the capacitor; and the material according to the invention is particularly suitable for use in low activation potential ranges of up to 10 V, particularly preferably in the range of up to 5 V, more preferably in the range of up to 3 V.

至於還原性金屬,於本發明中可使用Li、Mg、Ca、B和/或Al,與其合金。較佳之材料可為Mg、Ca和Al,只要這些還原性金屬較起始之氧化物活潑即可,特別是Mg或Mg與Al之共溶合金為較佳選擇。As the reducing metal, Li, Mg, Ca, B, and/or Al may be used in the present invention, and an alloy therewith. Preferred materials may be Mg, Ca and Al as long as these reducing metals are more reactive than the starting oxide, especially a co-dissolved alloy of Mg or Mg with Al.

本發明中之還原產物,其特徵為還原性金屬之含量範圍高於10ppm,尤其是50至500ppm,其原因為還原過程中造成之摻雜之故。The reduced product of the present invention is characterized in that the content of the reducing metal is in the range of more than 10 ppm, especially 50 to 500 ppm, due to the doping caused during the reduction.

本發明中製備奈米尺度結構之方法,基本上和WO 00/67936所描述相似,為以蒸氣形式之還原性金屬將金屬氧化物還原。在這裡將欲被還原成粉末形式之閥金屬氧化物,在反應器中與還原性金屬蒸氣接觸。而還原性金屬藉由載氣氣流之作用被揮發與傳播,如一般在900至1200℃之高溫下,以氬氣通過在網上或是坩鍋中之閥金屬氧化物粉末,而一般持溫時間從30分鐘至數小時。由於閥金屬氧化物之莫耳體積約為其對應閥金屬的二至三倍,所以在還原過程中體積有相當的減少。在還原程序中,形成其中沉積有還原性金屬之氧化物之高度多孔之海綿狀結構。而由於還原性金屬之氧化物莫耳體積高於閥金屬氧化物與閥金屬莫耳體積間之變化,所以當其混入孔隙中時,並有殘餘應力之生成。結構中還原性金屬之氧化物可藉由將其溶解而從結構中移除,並可得到高度多孔之金屬粉末。其還原反應機制、孔洞之生成與分佈之研究,敘述如下:從還原閥金屬氧化物粒子或基材表面上之小反應核點開始,具有奈米尺度之層狀結構,在閥金屬/閥金屬氧化物起始之反應相中之反應前段之後形成,這些層一開始定向垂直於在靠近表面之粒子/基材區域之表面,然而,當反應前段移向氧化物粒子/基材深部時,層狀物之方向與尺度則決定於閥金屬氧化物中主要粒子之晶體方向與尺度與反應條件。閥金屬氧化物晶粒中之一定數量晶格面被化學等量數之閥金屬與還原性金屬之氧化物之晶格面取代。這些實際上因其存在高界面應力而呈現非常強烈地不利的奈米大小層狀結構依然可被製備及變成可行,此乃由於還原為強烈之放熱反應及至少部分之過多能量未以熱之形式逸散,但“投入”至結構之形成,使其快速之反應動力可行。層狀結構中很多平坦之界面可作為還原性金屬原子之“快速道路”,換言之其允許快速之擴散,及因此其造成快速之反應動力且有效地降低反應系統之總能量。然而,包含閥金屬與還原性金屬氧化物之層狀結構只有在介穩態時形成,而當導入熱能後,使其形成較低能量之結構狀態。在一還原程序以相對長之熱處理時間與固定的反應條件(如溫度、還原性金屬之蒸氣壓)“正常”實施,其結構轉變無可避免會發生,換言之,奈米尺寸層狀結構轉換成更粗大且相互交替之結構,其包含閥金屬區域與還原性金屬氧化物之區域。The method of preparing a nanoscale structure in the present invention is substantially similar to that described in WO 00/67936 for the reduction of a metal oxide by a reducing metal in the form of a vapor. Here, the valve metal oxide to be reduced to a powder form is contacted with a reducing metal vapor in the reactor. The reducing metal is volatilized and propagated by the action of the carrier gas stream, such as generally at a high temperature of 900 to 1200 ° C, with argon passing through the valve metal oxide powder on the net or in the crucible, and generally holding the temperature Time is from 30 minutes to hours. Since the molar volume of the valve metal oxide is about two to three times that of its corresponding valve metal, there is a considerable reduction in volume during the reduction process. In the reduction procedure, a highly porous sponge-like structure in which an oxide of a reducing metal is deposited is formed. Since the molar volume of the reducing metal oxide is higher than the change between the valve metal oxide and the valve metal molar volume, when it is mixed into the pores, residual stress is generated. The oxide of the reducing metal in the structure can be removed from the structure by dissolving it, and a highly porous metal powder can be obtained. The reduction reaction mechanism, the formation and distribution of pores are described as follows: from the metal oxide particles of the reduction valve or the small reaction nuclei on the surface of the substrate, the layered structure with a nanometer scale, in the valve metal/valve metal Formed after the reaction stage in the initial reaction phase of the oxide, the layers are initially oriented perpendicular to the surface of the particle/substrate region near the surface, however, when the reaction front moves toward the oxide particle/substrate deep, the layer The direction and scale of the material are determined by the crystal orientation and scale of the major particles in the valve metal oxide and the reaction conditions. A certain number of lattice faces in the valve metal oxide grains are replaced by a lattice face of a chemically equivalent number of valve metals and oxides of the reducing metal. These nano-sized layered structures, which are actually very strongly unfavorable due to their high interfacial stress, can still be prepared and become feasible due to the reduction of the intense exothermic reaction and at least part of the excess energy not in the form of heat. Escape, but "input" to the formation of the structure, making it a quick response to the dynamics. Many flat interfaces in a layered structure act as "fast roads" for reducing metal atoms, in other words they allow rapid diffusion, and thus they cause rapid reaction kinetics and effectively reduce the total energy of the reaction system. However, the layered structure comprising the valve metal and the reducing metal oxide is formed only in the metastable state, and when the thermal energy is introduced, it is formed into a lower energy structural state. In a reduction process, the relatively long heat treatment time and the fixed reaction conditions (such as temperature, vapor pressure of reducing metal) are "normally", and the structural transformation is inevitable, in other words, the nano-sized layered structure is converted into A coarser and alternating structure comprising a region of the valve metal region and a reducing metal oxide.

目前發現,在發生結構轉變前,若小心地確保還原產物冷卻降至某一溫度,於此溫度下之層狀結構維持穩定,則層狀結構可以被冷凍。根據本發明,還原條件可以確定,使得還原可以在短時間內均勻的進行。換言之,若使用粉狀起始氧化物,當還原程序完成之後,在氧化物與還原產物之粉末床內儘可能立刻快速地冷卻。It has now been found that the layered structure can be frozen if the layered structure at this temperature remains stable until the cooling of the reduced product is carefully cooled to a certain temperature before the structural transformation occurs. According to the present invention, the reducing conditions can be determined such that the reduction can be performed uniformly in a short time. In other words, if a powdered starting oxide is used, after the reduction procedure is completed, it is cooled as quickly as possible in the powder bed of the oxide and the reduction product as soon as possible.

基於此項理由,使用較低厚度之粉末床為較佳,以確保還原性金屬之蒸氣能均勻滲入粉末床中。粉末床之厚度以小於1cm較佳,尤其是小於0.5cm為更佳。For this reason, it is preferred to use a powder bed of a lower thickness to ensure uniform vapor permeation of the reducing metal into the powder bed. The thickness of the powder bed is preferably less than 1 cm, more preferably less than 0.5 cm.

此外,可藉由提供一還原性金屬蒸氣較長之自由徑長度,確保還原性金屬蒸氣可均勻滲入粉末床中。根據本發明,還原反應因此較適合於低壓下進行,更佳是在無載氣之條件下進行。還原反應特別適合在無氧環境下,還原性金屬蒸氣之蒸氣壓為10-2 至0.4bar時進行,更適於在0.1至0.3bar下進行。可接受的低載氣壓力為至多0.2bar,更佳為小於0.1bar,無任何問題。適當之載氣種類可為(特別是)鈍氣,如氬氣與氦氣,和/或氫氣。In addition, it is ensured that the reducing metal vapor can be uniformly infiltrated into the powder bed by providing a longer free diameter length of the reducing metal vapor. According to the invention, the reduction reaction is therefore more suitable for carrying out at low pressure, more preferably under conditions of no carrier gas. The reduction reaction is particularly suitable in an oxygen-free environment where the vapor pressure of the reducing metal vapor is from 10 -2 to 0.4 bar, more preferably from 0.1 to 0.3 bar. An acceptable low carrier gas pressure is at most 0.2 bar, more preferably less than 0.1 bar, without any problem. Suitable carrier gas species can be (especially) blunt gases such as argon and helium, and/or hydrogen.

層狀結構深度之增加速率,隨著其深度提升而降低,原因為沿著已還原之金屬層狀物與在金屬層狀物間形成之還原性金屬氧化物之界面之擴散路徑隨之增長。目前已發現當材料還原之深度至多達1μm時,基本上無層狀結構之轉變。The rate of increase in the depth of the layered structure decreases as its depth increases because the diffusion path along the interface between the reduced metal layer and the reducing metal oxide formed between the metal layers increases. It has now been found that when the depth of material reduction is as high as 1 μm, there is substantially no transition of the layered structure.

根據本發明,所使用之閥金屬氧化物粉末,其主要結構粒子大小(晶粒尺度)之最小剖面尺度較佳不超過2μm,以不超過1μm更佳,以平均不超過0.5μm為特佳。若閥金屬氧化物粉末之主要結構具有相當小粒徑時,其可被用於多孔之燒結團聚物。有利於欲強力燒結一起之主要粒子,但其中之開放孔之階級性結構網絡之存在於聚集的主要粒子間,因而其開放孔之孔洞大小分布可使還原性金屬之蒸氣直接到達且還原很大部分之主要粒子表面。According to the present invention, the valve metal oxide powder used preferably has a minimum cross-sectional dimension of the main structural particle size (grain size) of not more than 2 μm, more preferably not more than 1 μm, and particularly preferably no more than 0.5 μm. If the main structure of the valve metal oxide powder has a relatively small particle size, it can be used for the porous sintered agglomerate. It is beneficial to the main particles that want to be strongly sintered together, but the class structure network of the open pores exists between the main particles of the aggregation, so the pore size distribution of the open pores can directly reach the vapor of the reducing metal and restore a large part. The main particle surface.

雖然其效果明顯小於孔道,相鄰的主要粒子間的晶界也能加速擴散。因此,除了小的主要粒子與開放之孔度外,有利於在聚集的閥金屬氧化物粒子中欲形成的主要粒子間之高比例之晶界。上述可藉由主要粒子粒徑之最適化及氧化物前驅物之沉澱形成氫氧化物與氫氧化物之煅燒中之燒結,以形成閥金屬氧化物。煅燒進行之溫度以400至700℃為較佳,特別是以500至600℃為更佳。Although the effect is significantly smaller than the pores, the grain boundaries between adjacent major particles can accelerate diffusion. Therefore, in addition to the small primary particles and the open porosity, a high proportion of grain boundaries between the main particles to be formed in the aggregated valve metal oxide particles is favored. The above can be formed by the optimization of the particle size of the main particles and the precipitation of the oxide precursor to form a hydroxide in the calcination of the hydroxide and the hydroxide to form a valve metal oxide. The temperature at which the calcination is carried out is preferably from 400 to 700 ° C, particularly preferably from 500 to 600 ° C.

在製備具有層狀表面結構之金屬箔與線中,以使用於金屬箔或線表面具有一氧化物層厚度小於1μm為較佳,以小於0.5μm為更佳。In the preparation of the metal foil and the wire having the layered surface structure, it is preferable that the thickness of the oxide layer is less than 1 μm for the metal foil or the surface of the wire, and more preferably less than 0.5 μm.

在低氣壓下之還原反應之後,其進行時間可由數分鐘至數小時,較佳為10至90分鐘,決定於所使用之還原性金屬蒸氣或金屬蒸氣混合物與其蒸氣壓,還原反應之停止可由中斷還原性金屬蒸氣之供應,和快速冷卻已還原之閥金屬至溫度小於100℃,以穩定閥金屬或閥金屬次氧化物層與還原性金屬氧化物之奈米層狀結構,不同方向之鄰近層狀結構之燒結並形成可接受之稍粗大尺寸。冷卻程序可以藉由導入保護性氣體(冷卻氣體),如氬氣與氦氣為較佳,以快速增壓之方式進行冷卻。較適當之程序為在3分鐘內冷卻至300℃,之後另一個3分鐘冷卻至200℃,在另外之5分鐘內冷卻至100℃。After the reduction reaction under low pressure, the progress time may be from several minutes to several hours, preferably from 10 to 90 minutes, depending on the reducing metal vapor or metal vapor mixture used and its vapor pressure, and the stop of the reduction reaction may be interrupted. Supply of reducing metal vapor, and rapid cooling of the reduced valve metal to a temperature of less than 100 ° C to stabilize the nanostructure of the valve metal or valve metal suboxide layer and the reducing metal oxide, adjacent layers in different directions The structure is sintered and forms an acceptably slightly coarser size. The cooling process can be performed by introducing a protective gas (cooling gas) such as argon gas and helium gas to perform rapid pressurization. A more appropriate procedure is to cool to 300 ° C in 3 minutes, then cool to 200 ° C in another 3 minutes, and cool to 100 ° C in another 5 minutes.

根據本發明,還原程序之進行以較低溫之條件為佳,目的為減少奈米層狀結構尺寸之粗大化。閥金屬氧化物之還原溫度由500至850℃,較佳為小於750℃,特別是小於650℃為更佳。此處,實際之溫度應超過還原反應之起始溫度,因為還原反應為放熱反應之故。According to the present invention, the reduction procedure is preferably carried out at a lower temperature, with the aim of reducing the size of the nanolayer structure. The reduction temperature of the valve metal oxide is preferably from 500 to 850 ° C, preferably less than 750 ° C, especially less than 650 ° C. Here, the actual temperature should exceed the initial temperature of the reduction reaction because the reduction reaction is an exothermic reaction.

於此發明中,為了避免包含反應產物與氧化還原性金屬氧化物(其在還原反應開始時形成)之奈米層狀結構之不完整或尺寸增大,不同之量測方式可採選擇或是結合方式。In the present invention, in order to avoid the incompleteness or size increase of the nano-layered structure including the reaction product and the redox metal oxide which is formed at the beginning of the reduction reaction, different measurement methods may be selected or Combination method.

例如,於高還原溫度時,藉由提供還原性金屬蒸氣之有效且快速之收集,可充分確保短的還原時間,例如以較小之起始金屬氧化物粉末床和/或一低的載氣壓力,換言之,即增加其還原性金屬蒸氣之原子自由路徑。另一方面,在低的還原溫度下,可以接受較長之還原時間。For example, at high reduction temperatures, short reduction times can be adequately ensured by providing an efficient and rapid collection of reducing metal vapors, such as a smaller starting metal oxide powder bed and/or a lower carrier gas pressure. Force, in other words, increases the atomic free path of its reducing metal vapor. On the other hand, at low reduction temperatures, longer reduction times can be accepted.

具有有利的開放孔結構之起始閥金屬氧化物團聚物,只需較不嚴苛之製程條件,即可達到本發明之層狀結構。在還原反應完成與已還原之閥金屬氧化物冷卻及逐步的通入氧氣或空氣使其鈍化之後,其中之還原性金屬氧化物可以從形成之奈米結構中濾除,如以無機酸之方式,例如以硫酸或鹽酸或其混合物,再以去離子水清洗至中性,再乾燥之。The starting valve metal oxide agglomerate having an advantageous open pore structure allows the layered structure of the present invention to be achieved with less stringent process conditions. After the reduction reaction is completed and the reduced valve metal oxide is cooled and gradually passed through oxygen or air to passivate, the reducing metal oxide therein can be filtered out from the formed nanostructure, such as in the form of a mineral acid. For example, it is washed with sulfuric acid or hydrochloric acid or a mixture thereof, and then neutralized with deionized water to be dried.

在還原微細分散粉末之例子中,其包含具有扁平之主要結構,並有部分以樹突狀之形式長至其它結構中。In the example of reducing the finely divided powder, it contains a main structure having a flat shape, and a portion thereof grows in a dendritic form to other structures.

在還原性金屬氧化物被濾除後,獨立之閥金屬層狀結構仍維持幾何結構上之穩定,因其與鄰近之層狀物充分之燒結,通常藉由獨立層之尾端形成不同方向之層狀結構,原先(多晶)之閥金屬氧化物顆粒因此以被轉化成聚集的閥金屬顆粒,其主要粒子包含不同方向之層狀結構群,且其互相燒結。總之,一種穩定、相互貫穿之金屬結構與“均一(flat)”之孔洞因此形成。After the reducing metal oxide is filtered out, the independent valve metal layer structure remains geometrically stable because it is sufficiently sintered with adjacent layers, usually by different ends of the individual layers. In the layered structure, the original (polycrystalline) valve metal oxide particles are thus converted into aggregated valve metal particles, the main particles of which contain layered structures in different directions, and which are sintered to each other. In summary, a stable, interpenetrating metal structure and a "flat" hole are thus formed.

圖1為圖示說明進行本發明程序之裝置,廣泛地以1表示反應器,其具有一還原腔室2。參照數字3表示溫度控制器,包含加熱線圈與冷卻線圈。保護或充填氣體或是冷卻氣體藉由一閥導入還原反應腔室中,其導入方向為箭號4。還原反應腔室經抽真空或是氣體移除之方向為箭號5。還原腔室2與還原性金屬之氣化腔室6接合,並另外提供一分開的加熱源7。氣化腔室與還原腔室藉由閥區域8作有效之熱隔絕。閥金屬氧化物以薄粉末床之方式於船形體10中被還原。若使用閥金屬氧化物箔或線或是具有一包含閥金屬氧化物表面之箔或線,以垂直懸掛並平行於還原腔室中之還原性金屬蒸氣之流動方向為較佳。在船形體9中之還原性金屬被加熱至一可提供所需之蒸氣壓之溫度。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a diagram illustrating the apparatus for carrying out the process of the present invention, broadly indicated by 1 having a reduction chamber 2. Reference numeral 3 denotes a temperature controller including a heating coil and a cooling coil. The protective or filling gas or cooling gas is introduced into the reduction reaction chamber through a valve, and its introduction direction is arrow 4. The direction in which the reduction reaction chamber is evacuated or the gas is removed is arrow 5. The reduction chamber 2 is joined to the gasification chamber 6 of the reducing metal and additionally provides a separate heating source 7. The gasification chamber and the reduction chamber are effectively thermally insulated by the valve region 8. The valve metal oxide is reduced in the boat body 10 in the form of a thin powder bed. If a valve metal oxide foil or wire or a foil or wire having a valve metal oxide surface is used, it is preferred to hang vertically and parallel to the flow direction of the reducing metal vapor in the reduction chamber. The reducing metal in the boat 9 is heated to a temperature that provides the desired vapor pressure.

於船形體中氧化物粉末被導入具有5mm高之粉末床中,含有鎂屑之船形體置於氣化腔室,該反應器充填氬氣。之後還原腔室加熱至還原溫度,且將壓力抽真空至0.1bar。隨後氣化腔室則加熱至800℃,此時鎂蒸氣壓(靜態)約0.04bar。30分鐘後,關閉還原腔室與氣化腔室之加熱源,而藉由從200bar降壓冷卻之氬氣通入還原腔室持續另一段時間,在同時還原腔室之腔壁則以水冷卻之。The oxide powder was introduced into a powder bed having a height of 5 mm in a boat body, and a boat-shaped body containing magnesium chips was placed in a gasification chamber, and the reactor was filled with argon gas. The reduction chamber was then heated to a reduction temperature and the pressure was evacuated to 0.1 bar. The gasification chamber is then heated to 800 ° C at which time the magnesium vapor pressure (static) is about 0.04 bar. After 30 minutes, the heating source of the reduction chamber and the gasification chamber was closed, and the argon gas cooled from 200 bar was introduced into the reduction chamber for another period of time, while the chamber wall of the reduction chamber was cooled by water. It.

圖2、3與4為根據本發明還原之鉭粉,在經由離子束聚焦製備反應產物後,以不同倍率下之穿透式電子顯微鏡影像。圖中之暗的條狀物為鉭之層狀物,而較淡色之條狀物為氧化鎂層狀物。不同方向之層狀物結構則對應於不同起始五氧化鉭之晶向。Figures 2, 3 and 4 are transmission electron microscope images at different magnifications after preparation of the reaction product via ion beam focusing in accordance with the present invention. The dark strips in the figure are layers of tantalum, while the lighter strips are magnesium oxide layers. The layer structure in different directions corresponds to the crystal orientation of different starting ruthenium pentoxide.

1...反應器1. . . reactor

2...環原腔室2. . . Ring original chamber

3...溫度控制器3. . . Temperature Controller

6...氣化腔室6. . . Gasification chamber

7...加熱源7. . . Heating source

8...閥區域8. . . Valve area

9...船形體9. . . Boat body

10...船形體10. . . Boat body

圖1為圖示說明進行本發明程序之裝置,Figure 1 is a diagram illustrating the apparatus for carrying out the procedure of the present invention,

圖2為根據本發明還原之鉭粉在經由離子束聚焦製備反應產物後之穿透式電子顯微鏡影像。2 is a transmission electron microscope image of a reduced tantalum powder prepared by ion beam focusing in accordance with the present invention.

圖3為根據本發明還原之鉭粉在經由離子束聚焦製備反應產物後之穿透式電子顯微鏡影像。Figure 3 is a transmission electron microscope image of a reduced tantalum powder prepared by ion beam focusing in accordance with the present invention.

圖4為根據本發明還原之鉭粉在經由離子束聚焦製備反應產物後之穿透式電子顯微鏡影像。Figure 4 is a transmission electron microscope image of a reduced tantalum powder prepared by ion beam focusing in accordance with the present invention.

1...反應器1. . . reactor

2...環原腔室2. . . Ring original chamber

3...溫度控制器3. . . Temperature Controller

6...氣化腔室6. . . Gasification chamber

7...加熱源7. . . Heating source

8...閥區域8. . . Valve area

9...船形體9. . . Boat body

10...船形體10. . . Boat body

Claims (14)

一種條狀或片狀之閥金屬與閥金屬次氧化物結構,其具有一橫向尺度為5至100nm。 A strip or sheet of valve metal and valve metal suboxide structure having a lateral dimension of 5 to 100 nm. 根據申請專利範圍第1項之閥金屬與閥金屬次氧化物結構,其具有一片狀或層狀之粉末形式的主要結構。 The valve metal and valve metal suboxide structure according to claim 1 of the patent application has a main structure in the form of a sheet or layer of powder. 根據申請專利範圍第1項之閥金屬與閥金屬次氧化物結構,其為表面條狀結構之形式。 The valve metal and valve metal suboxide structure according to claim 1 of the scope of the patent application is in the form of a surface strip structure. 根據申請專利範圍第3項之閥金屬結構,其為箔或線形式具有一寬度為5至100nm及一條間隙為一至兩倍於條寬度之條狀物。 A valve metal structure according to the third aspect of the patent application, which has a strip having a width of 5 to 100 nm and a gap of one to two times the strip width in the form of a foil or a wire. 根據申請專利範圍第1至4項中任一項之閥金屬與閥金屬次氧化物結構,其中條狀物或片狀物在群中平行排列。 The valve metal and valve metal suboxide structure according to any one of claims 1 to 4, wherein the strips or sheets are arranged in parallel in the group. 根據申請專利範圍第1至4項中任一項之閥金屬與閥金屬次氧化物結構,其中橫向尺度或條寬度為8至50nm。 The valve metal and valve metal suboxide structure according to any one of claims 1 to 4, wherein the lateral dimension or the strip width is 8 to 50 nm. 根據申請專利範圍第1至4項中任一項之閥金屬結構,其包含Ti、Zr、V、Nb、Ta、Mo、W、Hf或Al,特別是Nb或Ta或其合金。 The valve metal structure according to any one of claims 1 to 4, which comprises Ti, Zr, V, Nb, Ta, Mo, W, Hf or Al, in particular Nb or Ta or an alloy thereof. 根據申請專利範圍第1至4項中任一項之閥金屬次氧化物結構,其具有化學式NbOx ,其中0.7<x<1.3。The valve metal suboxide structure according to any one of claims 1 to 4, which has the chemical formula NbO x , wherein 0.7 < x < 1.3. 根據申請專利範圍第1至4項中任一項之閥金屬與閥金屬次氧化物結構,其特徵為至少一種還原 性金屬之含量為10至500ppm。 A valve metal and valve metal suboxide structure according to any one of claims 1 to 4, characterized in that at least one reduction The content of the metallic metal is from 10 to 500 ppm. 一種還原閥金屬氧化物之方法,其藉由還原性金屬蒸氣,在一足以進行還原反應之溫度下形成層狀奈米結構,其特徵在於將已還原之閥金屬氧化物在層狀結構被熱分解及轉換成較粗大之結構前經冷凍。 A method of reducing a valve metal oxide by forming a layered nanostructure at a temperature sufficient to carry out a reduction reaction by a reducing metal vapor, characterized in that the reduced valve metal oxide is heated in a layered structure Freeze before decomposing and converting into a coarser structure. 根據申請專利範圍第10項之方法,其特徵在於該還原反應於惰性氣體壓力小於0.2bar下進行,及還原性金屬之蒸氣壓為10-2 至0.4bar。The method according to claim 10, characterized in that the reduction reaction is carried out at an inert gas pressure of less than 0.2 bar, and the reducing metal has a vapor pressure of from 10 -2 to 0.4 bar. 根據申請專利範圍第10或11項之方法,其特徵在於還原產物在還原程序完成後,立刻在數分鐘內被冷卻至低於100℃。 The method according to claim 10 or 11, wherein the reduced product is cooled to less than 100 ° C in a few minutes immediately after the reduction procedure is completed. 根據申請專利範圍第10或11項之方法,其特徵在於以Li、Al、Mg和/或Ca,特別是Mg,作為還原性金屬。 The method according to claim 10 or 11, characterized in that Li, Al, Mg and/or Ca, particularly Mg, is used as the reducing metal. 根據申請專利範圍第10或11項之方法,其特徵在於以Al、Hf、Ti、Zr、V、Nb、Ta、Mo和/或W與其混合氧化物,特別是Nb或Ta,作為被還原之氧化物。 The method according to claim 10 or 11, characterized in that Al, Hf, Ti, Zr, V, Nb, Ta, Mo and/or W and its mixed oxide, in particular Nb or Ta, are reduced Oxide.
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DE102007038581A DE102007038581A1 (en) 2007-08-16 2007-08-16 Valve metal structure and valve metal sub-oxide structure, have lateral dimension of 5 to 10 nanometers and are expanded in streaky or flat manner and valve metal structures are in form of foils or wires
DE102007057761A DE102007057761A1 (en) 2007-11-30 2007-11-30 Strip-like or sheet-like valve metal and valve metal suboxide structures in the form of surface strip structures, foils, or wires, useful e.g. as catalysts and support materials for catalysts, have specified transverse dimension

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