TW200926287A - Method and apparatus for shaping gas profile near bevel edge - Google Patents

Method and apparatus for shaping gas profile near bevel edge Download PDF

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TW200926287A
TW200926287A TW097137908A TW97137908A TW200926287A TW 200926287 A TW200926287 A TW 200926287A TW 097137908 A TW097137908 A TW 097137908A TW 97137908 A TW97137908 A TW 97137908A TW 200926287 A TW200926287 A TW 200926287A
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gas
edge
substrate
inert gas
flow rate
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TW097137908A
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TWI412077B (zh
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Jack Chen
Iii Andrew D Bailey
Iqbal Shareef
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Lam Res Corp
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    • H01L21/3105—After-treatment
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    • H01L21/3105—After-treatment
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Description

200926287 六、發明說明： 【發明所屬之技術領域】 本發明係關於半導體製造，尤有關於蝕刻與清洗基板邊緣钭 角的方法與設備。 ’ 【先前技術】 ❹ 當特徵尺寸變得越來越小時，晶圓邊緣區域的清洗就變得更 ^困難。此外，當製造過程欲達到更小的特徵尺寸而採用較新的 清洗技術時，這些技術將利用到不同的製程化學物質。1中某— „匕學物質對於晶圓的有效部分，即晶片將留存在“的 區域，是具有腐蝕性的。另外一個縮小特徵尺寸的結果是邊 除區變得更小。因此任何邊緣的清洗必須針對邊緣以確保腐蝕 化學物質將不影響晶|]的其餘部分^目前，為了便利邊緣的 而讓任何顆粒或污染物能在施加於基板上的處理中移除之/ 2發。然而卻還有著能夠清洗邊緣時而不影響晶κ中心部 製造過程中使賴的製程，尤其是使用腐缝^ 耘氣體作為4洗化學物質時，這需要將變得更加明顯。 鑑於上述情況，在晶圓斜角邊緣變得越小時，' 此區之系統及方法，且執行清洗時獨響中心^域uu清潔 【發明内容】 清 料提供統來侧基板邊緣以期 ，中心區域免受任何有害的賴種類，本ΐ施 J滿足此需未。應充分了解到，本發明可用許多的方 例=:方法、製程、設備或系統。數個本發明的發明實ΐ 在一實施例中’提供一種在製程腔室内侧基板 方法包括使惰性氣體流人絲在基板中心區域上 緣區域上。此方法更包括在邊緣區域激發電聚: 200926287 變 在另一實施例中，提供一種清洗基板邊緣斜角的方 法開始於使惰性氣獻人定義在基板_4域上方的 央區。蝕刻劑氣體在惰性氣體流動的同時流 = 與混合氣體流大體上維持製程氣體之質量分率不 此方法包括在邊緣區域通過靠近邊緣區域之相對的妝 其中惰性氣體流與抛情氣體流在防止射 散 中央，於邊緣區域大體上維持_劑氣體之質以以至 支撐物與-對置於基板支職邊緣區域上方^輪狀g括 ❹ ϊΐ腔室，氣體分配系統，其具有能提供惰性氣體至美i二 二2的第-氣體通口及能提供製程氣體到邊緣二 ”Π。控制腔室内塵力賴力控制系統也包含U近= 程腔室包括控制惰性氣體及製程氣贿製 器。用以與處理器做數據通信的妙二壓力的處理 能被處理器操作的程式。此程式』㈡存 持製程氣體之質量分率不變。用來控ί製 其他氣體混合的第二程式也有提供在内。 蝶長風體與 本發明之其他目的及優點由隨後舉 細說明及隨附之相對應圖式當可更加明二慨月本發明原理的詳 【實施方式】 曰圓ΐ裡提供一種控制晶圓邊緣蝕刻速率同時伴1 r為了《要求的以作=以=體。 (Torr)或更大些。在次之的眚 ，内塾力疋在1托耳 程氣體到晶圓邊緣區域時，此中央氣體供應器運送製 體。在這實施例中，中央氣體在曰、n供應器被用來提供惰性氣 防止邊緣區域的製程氣體柯· :®二心區域起緩衝作用，用以 乳體擴散财心_。在另—個實施例中， 4 200926287 器用來提供惰性氣體到晶圓的中心區域，同時惰 吼體及製程氣體的混合氣體被供應到邊緣區域。應充分了解 到在邊緣區_躲氣體及提供在巾心區_雜氣體不 一疋是相同的氣體。 —，上係一簡化示意圖，說明依照本發明之一實施例的製程腔 H a，晶圓邊緣被侧著。腔室100包括邊緣電極10如及 發m電極施魏著基板102外緣配置的上電極，而邊緣 = 是配置相對於上邊緣電極106a的下電極且在基板1〇2 區域的下方。在—實施例中，邊緣電極1G6a及腿是輪形 的％。可作為電極的基板102靜置於基板支撐物104上。在一實 基板今撐才勿104可是一靜電夾盤。中央氣體供應該110 、'二質机控制器108傳入氣體至腔室1〇〇的中央區域。在一實施 例中，供應自中央氣體供應器11〇的氣體以約為每分鐘1〇〇〇標準 ^方公分（standard cubic centimeters per minute，sccm)流 鬱 j流入腔室。在另一實施例中’氣體流速是大K1〇〇〇sccm。於此 卞施例中使㈣製程氣體可以是相於半導體製程躺執行姓刻 操作的任何製程氣體。典型的製程氣體包括氧氣（〇2)、SF6、氯氣 、CF4 ’且可隨著製程氣體供應的任何惰性氣體，如氬氣、’ 氮氣等。許多其它用於半導體製造的製程氣體可含括在此討論的 實施例。應充分了解到，在一實施例中腔室1〇〇内的壓力是保持 在1 Torr或更大些。在這壓力制度内來自外圍邊緣附近的氣體/
離子之擴散效應於姓刻操作期間會被來自中心區域的氣體 效應抵消掉。 I 圖2係圖1之腔室的替代實施例，其中除了中央氣體供應芎 之外還包含邊緣氣體供應器。腔室1〇〇包括配置在其中的^電^ lj)6a及106b。基板1〇2靜置於基板支撐物1〇4上。中央氣體供 斋110經由質流控制器1〇8供應惰性氣體至腔室的中央區域。'如、、 區域118所示，此中央氣體供應器在晶圓中心區域起緩衝作用， 用以保護定義在其上的元件。邊緣氣體供應器114提供邊緣氣 至鄰近於基板102外圍且處於電極i〇6a及1〇北間的邊緣區域 5 200926287 116。此邊緣氣體供應是經由質流控制器瓜提供。 .以i狼^所需氣體流速及進人腔室的製程^ —人·貝j r 5己憶體可包含編碼。此編礁可 控制器108及112操作的程式以實現這裡描述S 彳脖f刀率。此外:此編石馬可包括用以控制腔室内塵力的子程 J圖2所示’邊緣區域在腔室⑽内邊緣氣 H !再者’腔室内壓力被控制在1 τ町或更大些在 車六古的二力Ϊ持在L5T〇rr或更大些。應充分了解到，在 ❹ 於2?的氣?之擴散效應是決定於來自中央氣體 If t換言之，在這壓力制度内會有更大量的碰撞及 的初非常短。此外’經由中央氣體供應器110提供 膏二二體可以是ί如氮氣、氬氣等任何穩定的惰性氣體。在」 實列中)具有較高分子量的惰性氣體較佳，但其並非必須。 3係圖1及圖2說明的氣體供絲設置之替代實施例，其 照本發明之―實施例而侧晶圓邊緣。這裡的腔室100再 =設置於靜置在基板支撐物104上之基板102外圍的電極 =及—106b。中央氣體供應器110經由質流控制器⑽傳入中央 基板102上的中心區域。來自邊緣反應氣體供應器 氣舰應器122的製程氣傳送至邊緣區域。這 ΐϊΐ經，流控制器112傳送至定義於基板搬外緣的邊緣 控制器120監視著質流控制器108及112的操作以期傳送 體比例。在此實施例中應充分了解到，質量分率可經由控 =斋12f及對應的質流控制器而被控制。在一實施例中，流經質 =控，器112的氣體將惰性氣體與製程氣體混合。如上文所討論， 二t體將生成清洗電聚。此惰性氣體不一定要與經由質流控制 斋108傳送至中央區域的惰性氣體相同。 士圖4係一簡化圖表，說明依照本發明之一實施例的清除氣體 ^速間質量率之比較。Y軸提供氧氣對於氮氣的質量分率比。）（ 由以公尺為單位說明離晶圓中心的距離。線2⑼說明供以流速1〇 200926287 Ξ及氣^的八中體可以看出’線2⑽代表離晶圓中心的 距離及質里分賴的線性_1中央區域 = scon時，蝕刻輪廓會如線2〇2說明的變 此連j 變舰S审_ :二：ϋ遣緣的蝕刻輪廓會如線204說明的 應惰性氣體及邊緣ί體供應==氧3贮傀二 2其==一^
圖5係-®表，麵舰本發明之—實施例 相對於沿著日日日_距離之變化情形。線雇綱—個狀況，立中 =0湖、經由中央輸送清除氣體，而以施謂於邊緣供應反 應亂體及以__供應邊緣雜氣體。應充分了解到，邊緣惰 性氣體可被稱為鎮流氣體（ballast gas)。線2〇8代表一狀況， 其中以20〇sccm、經由中央供應清除氣體、以施㈣於邊緣供應 製程氣體及以800sccm供應鎮流氣體。在線21〇，狀況係為：以 800 seem供應清除氣體及以2〇〇 sccm於邊緣供應製程氣體供應， 同時在此表述狀況中不供應邊緣惰性氣體。應充分了解到，如線 206、208及210共同的終點所示，位於邊緣的製程化學物質在此 實施例中仍是一致的。因此對於上述各個情況而言，蝕刻過程的 輪廓如所需地成形且位於邊緣區域的製程氣體之質量分率仍是一 致的。 圖6係一流程圖，說明依照本發明之一實施例的蝕刻基板邊 緣之方法操作。此方法開始於操作300，其中清除氣體被傳入腔室 的中央區域覆蓋過置放於腔室内基板的中心區域。如以上圖式所 示，清除氣體可以大於200 seem的流速傳入。在一實施例中，清 除氣體的流速是大於1000 seem。方法然後前進到操作302，其中 製程氣體被傳入覆蓋過製程腔室内晶圓的邊緣區域。製程氣體可 與操作300的清除氣體同時地被傳入。製程氣體可是任一用於餘 刻基板的適當製程氣體。在一實施例中，氧氣作為製程氣體被傳 入腔室覆蓋邊緣區域。氧氣的流速可以是200 seem或更大些。方 200926287 =進fj3G4，其中惰性氣體與製程氣體同時被傳入覆蓋 施例中，在傳人腔室前惰性氣體與製程氣體先 到掐，作3°4中惰性氣體的導入覆蓋邊緣區域是可ί 不同，，區域的惰性氣體: ❹ 旦程ίίίΐί氣體具有比傳入中央區域的惰性氣體較低的分子 ί。，其中在導人上述的氣體時電衆被激 ί及中心區域受保護免於腐谢生化學物 例允林使用遮板或插入物來保護中心區域免受舰 涉及心，應理解到本發明可利用各式各樣 偁、料随ZZ Γ作之事務。运些物理置通常為能夠儲存、傳送、人 此）。此；卜二他操作。方式之1子或磁性訊號的形式（軸未必二 目。，仃的操作常指的是如生產、鑑定、敎或對照等項 ο 任何在此描述能構成本發明一 2為二=與=行這些操作的元件姐匕 以是-C的電=擇=可 備使用’或者可以更方便地建造一個更專門的設 腦可棘齡上電腦可讀式編碼。此電 後能據的任何資料儲存元件’其所存數據之 碟機(NAS)H^取。電腦可讀取媒介的例子包括硬碟、網路磁 ' 、唯項§己憶體、隨機存取記憶體、CD-ROMs、CR-RS、 8 200926287 ^D-RWs、DVDs、快閃式記憶體、磁 存元件。此電腦可讀取媒介二匕先予與非先予數據館 使電滕可讀式編碼的電腦系統’ 讀先前詳述及研究圖式槪|，應了解熟悉本技藝者研 及等價動作。因此，土去4八做各種各樣替換、增加、變更 範圍内之所有如替代人本發明的真實精神及 内，除明《.扮*由往..等價動作。在_請專利範圍 ϋ發月已猎由數個實施例敘述，應 Ο ❹ 【圖式簡單說明】 解，======姆賴而容易理 室，刻i·照本發明之-實施例的製程腔 之外還包代實關，其愤了中央氣體供應器 關於=====置之替代實施例’其 氣體===二率=依照本發明之—實施例的三種清除 相對距i:·明之-實議^ 緣之流程圖’ _依照本發明之—實施例的_基板邊 【主要元件符號說明】 100 腔室 102 基板 104 基板支撐物 200926287 106a (邊緣)上電極 106b (邊緣)下電極 108 質流控制器 110 中央氣體供應器 112 質流控制器 114 邊緣氣體供應器 115 邊緣反應氣體供應器 116 邊緣區域 118 區域 120 控制器
122 邊緣惰性氣體供應器
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Claims (1)

  1. 200926287 七、申請專利範圍： 1· 一種在製程腔室内蝕刻基板邊緣斜角的方法，包括： 區， 使惰性氣體流入定義在基板中心區域上方的製程腔室中本 及 使惰性氣體與製程氣體的混合氣體流動至基板邊緣區域 上 在邊緣區域激發電漿，其中惰性氣體流與混合氣體流 氣體之質量分率實質上維持不變。 2. 如申請專利範圍第1項的在製程腔室内蝕刻基板邊緣斜& 11的方法，更包括： 在該邊緣區域維持南於1 Torr的氣麈。 3. 如申請專利範圍第1項的在製程腔室内蝕刻基板邊緣 的方法，其中流進中央區域的惰性氣體流速高於邊緣區域上 性氣體與製程氣體之流速。 m 4.如申請專概圍第1項的在製程腔室_刻基板邊緣斜 的方法，其中混合氣體中的惰性氣體流速是流進中央區域的 氣體流速之一部分。 5.如申請專概目第1棚在製雜室喊職板邊緣斜角 的方法，其中流進中央區域的惰性氣體與流進邊緣區域的惰性 體相同。 6·如申請專概㈣1棚在製雜室内侧基板邊緣斜角 的方法，其中在中央區域的製程氣體之質量分率在蚀刻期間約為 零’及在邊緣區域的製程氣體之質量分率是介於約〇 1與約0.2 f'。 7.如申請專利範圍第1項的在製程腔室内蝕刻基板邊緣斜角 200926287 的方法，其中混合氣體中的惰性氣體流速是流進中央區域的惰性 氣體流速之一部分，及製程氣體流速等同於流進中央區域的惰性 氣體流速。 8.如申請專織㈣1躺在製健冑_難板邊緣斜角 的方法，其中混合氣體中的惰性氣體之分子量少於流進中央區域 的惰性氣體之分子量。 9. 一種清洗基板邊緣斜角的方法，包括： 使惰性氣體>’11·入疋義在基板中心區域上方的製程腔室中央 區， 使餘刻劑氣體流動至基板的邊緣區域上；及 土在邊緣區域通過相對的輪狀電極激發電漿，該相對的輪狀電 極罪近邊㈣域’其巾’紐氣體流與蝴劑氣體流於邊緣區域使 姓刻劑氣體之質量分率實質上維持*變，且同時在防止㈣劑氣 體擴散至中央區域。 10·如申請專利範圍第9項的清洗基板邊緣斜角的方法，其 中蝕刻劑氣體流速是惰性氣體流速的一部分。 11.如申請專利範圍帛9項的清洗基㈣緣斜角的方法，更 包含： W 將惰性氣體、紅中央區域時，將·氣體混合於邊緣 區域上的蝕刻劑氣體流中。 φ益ϋτ請專利範圍第9項的清洗基板邊緣斜角的方法，其 中侧航财基本上由氧氣域。 月 JL中上請專利細第11獅清絲板邊緣斜肖的方法， ，、中。__體舰合_滅體流敍練·氣體流速與 12 200926287 流進中央區域的惰性氣體流速這兩者。 勹括14如申請專利範圍第9項的清洗基板邊緣斜角的方法，更 在該邊緣區域維持高於1 Torr的氣壓。 15·如申請專利範圍第9項的清洗基板邊緣斜角的方法豆 中邊緣斜角的清洗不用靠置放於基板上的插入物來完成。’ 〃
    16.如申請專利範圍第9項的清洗基板邊緣斜角的方法，i 中在中央區域的蝕刻劑氣體之質量分率在蝕刻期間約為零，及^ 邊緣區域的蝕刻劑氣體之質量分率是介於約0.1與約0.2間。 17. 如申請專利範圍第11項的清洗基板邊緣斜角的方法， 其中混合^體中的惰性氣體之分子量少於流進中央區域的惰性氣 體之分子量。 18·如申請專利範圍第11項的清洗基板邊緣斜角的方法， 其中流進中央區域的惰性氣體相同於蝕刻劑氣體混合之惰性氣 ❹體。 19· 一種製程腔室，包括： 一基板支撐物； 一，輪狀電極，設置於基板支撐物邊緣區域上方； 尸一氣體分配系統，包括提供惰性氣體於基板中心區域上的第 一氣體通口及提供製程氣體到邊緣區域附近的第二氣體通口； 一壓力控制系統，控制腔室内壓力； 一處理器’控制傳入腔室之惰性氣體及製程氣體和腔室壓 力；及 一記憶體，用以與處理器做數據通信，該記憶體儲存欲由處 13 200926287 ’該程式包括第—子程式’用來控制位於邊緣區 質上維持製程氣體之質量分率不變，及第二子程式在 程氣體與另-氣_混合。 20. 如申請專利範圍第19項的製程腔室，其中該 用以控制腔室壓力大於ITorr的壓力控制子程式。、μ武匕括 21. 如申請專利範圍第19項的製程腔室，其中一。 ❹ 控制製程氣體流速小於惰性氣體流速，且第二子子程式 氣體之流速小於製程氣體之流速。 巧控制該另一 八、圖式： 鲁 14
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