TW200924032A - Ion beam irradiation method and ion beam irradiation device - Google Patents

Abstract

This invention provides an ion beam irradiation method and an ion beam irradiation device which can prevent adverse effects on the processing of a region to be processed in the substrate even when a cutting process is carried out on a single substrate, therefore applicable to the processing of substrates with a width greater than the beam width. Relative to substrate (10) having a plurality of units (20) formed therein for holding row formation cutting belt (22) and column formation cutting belt arranged in a m-row by n-column manner (wherein m is an integer greater than 3, n is an integer greater than 2), ion beam (4), whose two ends along Y-axis are respectively located at two row formation cutting belts (22) of units (20) held at p row (wherein p is an integer greater than or equal to 1 and less than or equal to (m-2)), is used to perform ion beam irradiation steps a plurality of times in which substrate (10) is moved along X-axis and ion beam (4) is irradiated to form ion beam irradiation region (30). In addition, during the time interval of the ion beam irradiation steps, a substrate position modifying step is performed for modifying the position of substrate (10) and the row of units (20) of ion beam (4) so as to connect to a plurality of ion beam irradiation regions (30) and to irradiate ion beam (4) on all units (20). The connection parts (32) of the plurality of ion beam irradiation regions (30) are located at row formation cutting belt (22), and an optical mask is employed to direct the two ends of ion beam (4) along Y-axis to substantially parallel to X-axis.

Description

[Technical Field] The present invention relates to a flat panel display (liquid/day display) for irradiating an ion beam toward a substrate and performing processing such as ion implantation and ion beam alignment processing on the substrate. An ion beam irradiation method and an ion beam irradiation apparatus used in the case of an organic EL (Electroluminescence) display or the like. [Prior Art] The substrate has a tendency to increase in size due to improvement in productivity such as a flat panel display. In the case of increasing the size of the substrate, it is necessary to use an ion beam having a large beam width in order to irradiate the substrate with an ion beam. In order to cope with this, the ion beam of the ion source or the like is increased in size. When it has an It shape with a mass separation magnet, the mass separation magnet is also enlarged. If these devices are large, they will cause various problems related to production, transportation, cost, and shouting. As a technique for suppressing such an ion material, the technique disclosed in Patent Document 1 discloses a technique in which a substrate is divided into four (four) complex domains and processed, that is, a knife-side treatment is defined. Specifically, the following techniques (methods and devices) are described, that is, 'the X X $ a row is sequentially changed for each of the divided regions. The above-described divided region is in the longitudinal direction of the ion beam. The thin film transistor is formed in a region where the ion beam has a cross-sectional area reduction portion on both sides in the longitudinal direction and the ion beam is irradiated to the adjacent segment region 97132060 200924032, respectively, so that the irradiation of one of the reduced area portions is reduced. The area is overlapped with the other of the reduced area of the next sectional area to be irradiated. According to this technique, the irradiation reduction region is in the shape of synthesizing the ion amount of the two ion beam irradiations, and the ion implantation amount is substantially equal to the other regions. Therefore, even if one substrate is divided by the ion beam having a beam width smaller than the substrate width, it is possible to The entire surface of the substrate is ion-implanted with a substantially uniform ion implantation amount. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2007-163640 (paragraphs 0008, 0022, 0025, and FIG. 2 to FIG. 5) [Problems to be Solved by the Invention] The technique disclosed in Patent Document 1 above In the meantime, the shape of the opening portion of the slanted end of the length direction of the reticle is skillfully adjusted to reduce the amount of the ion beam passing therethrough to the target amount, and the overlapping irradiation is performed twice by the amount of the reduction of the amount of the J beam. The amount of exposure to the ion beam that passes through the other portions must be approximately equal. However, it is difficult to adjust the shape of the opening portion of the mask, and the amount or amount of decrease in the amount of the beam may be changed when the ion beam is irradiated for the second time. Therefore, when the ion beam is irradiated twice, The amount of ion beam irradiation on the overlapping portion may be more than the irradiation amount of other portions or less than the irradiation amount of other portions, resulting in uneven irradiation amount to the required processing region in the substrate (in the case of Patent Document 1, the film is electrically charged) The processing of the crystal formation area will produce a good influence not 97132060 5 200924032. Accordingly, it is a primary object of the present invention to provide an ion beam irradiation method and apparatus which are capable of performing a division process on a single substrate, and even if the division process is performed, it is possible to prevent adverse effects on the processing of a desired processing region in the substrate. The substrate having a width greater than the beam width can be processed. (Means for Solving the Problem) For the substrate, there is a substrate, that is, for performing one substrate (there is

When it is referred to as a mother substrate, it is a plurality of chamfers of a plurality of small substrates, and a step is formed in the surface of the substrate to form a slit and a line for dividing a substrate or the like. A plurality of cells arranged in a matrix and arranged in a matrix (ie, a repeating unit of a predetermined processing pattern). Alternatively, the column may be formed by splitting π and forming a splitting strip to illuminate the ion beam. The present invention focuses on the use of such a substrate and skillfully utilizes columns to form a segmentation band. The soil is one of the ion beam irradiation methods of the present invention, in which two directions orthogonal to each other are in the Χ direction and the ¥ direction, and a row extending in the X direction and extending in the γ direction are formed in the plane. Rows are formed in a row and are arranged in a matrix of "n columns η rows (m is an integer of 3 or more, n is a substrate of a plurality of units of 2 or more, and the size of the irradiation γ direction is larger than the size of the X direction:: two ions a beam irradiation method; characterized in that: the above-mentioned unit is sandwiched between two ends of the gamma direction (10) and an integer of (Μ): an ion beam of a beam width on a wide band, and a plurality of times-edges are performed. An ion beam irradiation step of irradiating the substrate with the ion beam to form an ion beam irradiation region on the substrate of 97132060 200924032, and performing the ion beam irradiation step, that is, the period during which the ion beam is not irradiated onto the substrate f changing the position of the substrate to change the substrate position changing step of irradiating the ion beam to the row of the cells, connecting a plurality of the ion beam/irradiation regions, and riding all of the ion beams toward the cells, and connecting The connection portion of the plurality of ion beam irradiation regions is located on the column shape, and both ends of the ion beam in the Y direction are shaped to be substantially parallel to the χ 方向 direction by a photomask. According to the ion beam irradiation method, a plurality of ion beam irradiation regions can be connected to irradiate the entire beam toward the entire unit. The connection portion where m is connected to the plurality of beam irradiation regions is located on the column forming division belt, so that the existence of the connection portion can be prevented from adversely affecting the uniform irradiation of the ion beam toward the unit. Further, since both ends of the ion beam in the γ direction are shaped by the photomask to be substantially nine lines in the x direction, the width of the connection portion can be reduced as compared with the case where the shaping is not performed in this manner. (4) The syllabus with a smaller width of the occupational division may also be such that the connecting portion is located on the column forming the dividing belt. As a result, even if a single substrate is divided, it is possible to prevent the substrate from being processed by the substrate having a width larger than the beam width by adversely affecting the processing of the unit which is a desired processing region in the sheet. - The other form of the ion beam irradiation method of Shuming is to form a dividing strip by forming two strips orthogonal to each other and a strip extending in the γ direction, and the matrix 97132060 7 200924032 f is arranged in a row, n rows (m, n An ion beam method for irradiating an ion beam having a size larger than a dimension in the χ direction by a substrate having a plurality of units of 2 or more integers; characterized in that the bundle width in the Η direction includes half of the above m 歹 J The ion beam of the size of the unit in the above column is subjected to an ion beam irradiation step of forming an ion beam irradiation region on the substrate while moving the substrate in the X direction twice while riding the ion beam toward the substrate, and In the upper _ sub-beam (four) step 卩 _ sub-beam is not irradiated to the position where the substrate is changed, and the irradiation of the "early TL substrate position changing step field is performed, and the ion beam is irradiated toward all of the cells, and ^ ^ The connecting portion of the two ion beam irradiation regions is formed at the end portion of the column forming portion on the side of the connecting portion, and is shaped into a beam;

O The present invention = "other forms of the sub-phase financial method, depending on the direction of the direction 4 X direction and the γ direction, the extension of the in-plane shape clip forms a segmentation band and the line extending in the direction of the 开 is opened 2 Χ direction a plurality of unit substrates in which m columns n 仃 are formed as a cutting tape and whose moments are integers of 2 or more in the Y direction, and the gamma side=the central material has one of the above-mentioned singular division bands In the method, the half of the ion column of the ion size of the direction is such that the beam width of the ❹U beam is such that the ion beam of the riding ruler phase is moved twice in a direction, and the ion is irradiated toward the substrate 97132060 200924032 c beam, and the ion beam irradiation step of forming an ion beam irradiation region on the substrate; and the ion beam is not irradiated onto the substrate at the interval of the ion beam irradiation step, and the substrate is centered on the center portion thereof Rotating 18 degrees in the substrate-plane, and changing the base of the above-mentioned unit that illuminates the ion beam, "turning (four), connecting two of the above-mentioned elements to assist the entire unit to illuminate the ion beam, and making the connection The connecting portions of the two ion beam irradiation regions are located on the center of the substrate to form a dividing strip, and the ends of the two ends of the ion beam in the γ direction are at least located on the side of the connecting portion by the photomask. In order to be substantially parallel to the χ direction, the 离子 〇 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子The dividing strips and the rows extending in the zigzag direction form a dividing strip and are arranged in a matrix such that a plurality of substrates 70 in the row η rows (m is an integer of 3 or more and η is an integer of 2 or more) illuminate the γ direction. An ionizing device of an ion beam having a size larger than a size of a sense direction; the hybrid comprising: a beam generating device, wherein the beam width in the gamma direction comprises (1) the valence is an integer of the "single beam"; the reticle The ion beam generating device generates a positive direction in which the both ends of the positive direction of the beam are substantially parallel to the χ direction, and the both ends of the 子 direction of the sub beam are shaped to be respectively located in the ρ column (ρ is 1). Above the integer of P$(m-2) The two (4) elements are divided and wide to pass through; the substrate crucible device has a function of causing the substrate to face in the χ direction and the u (four) shape; and the function of controlling the following is 97132060 200924032, that is, giving the above-mentioned substrate Position information in the γ direction, information indicating the position of the column on the substrate in the 丫 direction, and position information indicating the γ direction of the ion beam passing through the reticle, using the information (4) the substrate, _ The apparatus performs an ion beam irradiation step of forming an ion beam irradiation region on the substrate by irradiating the substrate with the ion beam of the photomask while moving the substrate toward the X^ direction a plurality of times, and performing the ion beam irradiation step in the ion beam irradiation step In the period in which the ion beam is not irradiated onto the substrate, the step of moving the substrate in the γ direction is performed to change the position of the column of the ion beam on the ion beam, and the connection is made to the upper ion beam irradiation region. The function of illuminating the ion beam toward all of the above units, and causing the plurality of disconnections to be connected to the above-mentioned segmentation (four) Wei. In the other aspect of the ion beam irradiation apparatus in which the radiation region is connected, the two directions orthogonal to each other are slanted in the X direction and the Υ direction, and the extension lines are formed in the plane to form the division band and the γ direction extends in the χ direction. Arranged, the column η is a substrate with a matrix of 2 or more and a wide band, and the gamma directional direction is larger than the Wei unit cell beam irradiation; the feature is: the ionization beam of the ion beam Αμ, +, , 生装置· 'Ion beam that produces γ half or more (4) I; fresh, the upper Mizui bundle (4) ^ ^ feet; = at least the following side of the joint side of the Y direction : The two members are parallel, and at the same time, the ion beam; ^ beam width ^ contains 97132060, I 3 200924032, more than half of the above-mentioned m columns, the beam width of the above unit is passed; the substrate driving device 'has a function of moving the substrate in the χ direction and the γ direction and a function of rotating in the surface of the substrate; and a control device having a function of controlling the gamma direction of the substrate, and displaying the information. The above column formation on the substrate Information on the position of the slashing direction and information indicating the position of the end portion on the side of the connecting portion on the side of the ion beam of the photomask, and using the information to control the substrate driving device, the substrate is turned on twice An ion beam irradiation step of irradiating an ion beam of the photomask to the substrate to form an ion beam irradiation region on the substrate while moving in the X direction, and the ion beam is not irradiated to the substrate at an interval of the ion beam irradiation step In the meantime, the substrate position changing step of changing the substrate in which the substrate is rotated by 180 degrees and moving in the γ direction is changed, and the two ion beam irradiation regions are connected to irradiate the ion beam to all of the cells. The function and the connection portion connecting the two ion beam irradiation regions ^ are located in the above-described columns to form a dividing belt. In still another aspect of the ion beam irradiation apparatus of the present invention, the two directions orthogonal to each other are set to the X direction. And the γ direction, forming a strip extending in the direction of the misalignment A 朝 in the plane to form a split strip and a row extending in the γ direction The ion beam irradiation device of the ion beam in which the size of the plurality of cells is arranged in a matrix of m columns and n rows (m and η are integers of 2 or more), and the ion beam having a size larger than the size of the X direction is irradiated in a matrix. The present invention includes: an ion beam generating device that generates an ion beam of a size of the above-mentioned unit 97132060 200924032 including a plurality of columns of the above m columns in a beam width direction; a photomask that generates an ion beam generated by the ion beam generating device The entire opening portion is substantially parallel to the X direction in the Y direction, and the Y-direction beam of the ion beam is held as a beam width of the unit including the half or more of the claw rows; The substrate driving device has a function of moving the substrate in the X direction and the X direction; and the control device has a function of controlling the position in the gamma direction of the substrate to indicate the above-described information on the substrate. The column forms the information of the position in the gamma direction of the segmentation band and indicates that the position of the end portion on the side of the connection portion of the ion beam of the photomask is not used, and the information is used. Controlling the substrate driving device, performing an ion beam irradiation step of irradiating the substrate in the X direction and irradiating the substrate with the ion beam* passing through the photomask to form an ion beam irradiation region on the substrate twice and performing the ion beam irradiation step In the interval between the irradiation steps, that is, during the period in which the ion beam is not irradiated onto the substrate, the substrate is changed in the γ direction.

a substrate position changing step of the unit for emitting the ion beam, a function of connecting the two ion beam irradiation regions to the entire unit to irradiate the ion beam, and a connection portion connecting the two ion beam irradiation regions The columns form the function of the split strip. = Further meaning of the inventive ionizing device, which is to be orthogonal to each other, to the direction of the material, and to the direction of the gamma, and to form a dividing zone along the X direction and in the gamma direction (4) The central portion of the Υ direction has an ion beam illuminating device for arranging an ion beam of a size of a size of the substrate in the direction of the Y direction of the 97132060 200924032 of the plurality of divided strips, and is characterized by comprising: an ion beam generating device that generates the Y direction The beam width includes an ion beam of a size of the above-mentioned unit of more than half of the columns of the itm column; the photomask is formed by the ion beam generated by the ion beam generating device, and the two ends t in the Y direction are at least connected as follows The end portion on the side of the portion is substantially parallel to the 乂 direction, and the end portion on the side of the connecting portion is positioned on the center of the substrate to form a dividing strip, and the bundle width in the ion Η direction is maintained to include the above-mentioned m columns. More than half of the rows of the above-mentioned cells pass through the beam width; the substrate driving device 'has a function of moving the substrate in the x-direction and rotating the substrate in the substrate plane centering on the crotch portion thereof And a control device having a function of controlling the substrate driving device to move the substrate toward the X direction while irradiating the substrate with the ion beam of the photomask on the substrate The ion beam irradiation step of the region is formed: and the ion beam irradiation step of the region is performed, and the ion beam is not mounted on the substrate at the interval of the ion beam irradiation step, and the substrate is rotated (10) around the center portion thereof. The substrate rotation step of the unit that irradiates the ion beam is changed, and the two ion beam irradiation regions are connected, and the king of the upper speed is 7L. The function of irradiating the ion beam and the connecting portion connecting the two ion beam irradiation regions to the central portion of the substrate forms a function of dividing the band. (Effect of the Invention) According to the inventions of the first, second, and seventh aspects of the patent application, a plurality of ion beam irradiation regions may be connected to 97132260 13 200924032, and all of the cells are irradiated to connect a plurality of ion beam irradiation (four) domains. The connection portion is located in the _ component band = the presence of the connection portion can be avoided, and the uniform irradiation of the ion beam to the unit is uniformly caused. Further step-by-shaping the both ends of the ion beam in the γ direction to be substantially parallel to the X direction, so that the width of the connection portion can be reduced as compared with the case of not shaping in this manner. When the width of the divided strip is small, the connecting portion can be easily placed on the column to form the dividing strip.

As a result, even if the substrate is divided, the substrate can be prevented from being adversely affected by the processing of the desired processing region, i.e., the substrate having a width greater than the beam width. Further, it is possible to suppress an increase in size of the ion source plasma beam generating device, the mass separation magnet, and the like. According to the invention of claims 3 to 6, and 8 to 10, the two ion beam irradiation regions can be connected and the ion beam can be irradiated toward all the cells. Further, the connection portion connecting the two ion beam irradiation regions is positioned to form the division band, so that the presence of the connection portion can be prevented from adversely affecting the irradiation of the ion beam toward the cell. Further, the shape of the at least the end portion of the two ends of the ion beam in the direction of the connection portion is substantially parallel by the reticle, so that the connection can be reduced as compared with the case where the shaping is not performed in this manner. Since the width of the portion is small, even in the case where the width of the column forming slit is small, the connecting portion can be easily positioned on the column to form the dividing tape. As a result, even if the substrate is subjected to the division process, it is possible to prevent the substrate of the desired processing region in the substrate from being adversely affected, whereby the substrate having a width greater than 97132060 14 200924032 can be processed. Further, it is possible to suppress an increase in size of the ion source plasma beam generating device, the mass separation magnet, and the like. [Embodiment] FIG. 1 is a schematic view showing an example of an ion beam irradiation apparatus for carrying out the ion beam irradiation method of the present invention. Further, in the drawings of Figs. 1 to 3 and Fig. 4 and subsequent figures, the directions shown are different by 90 degrees (see χ, γ in the figure). (1) Ion beam irradiation method and apparatus according to the first embodiment, the ion beam irradiation method and the ion beam irradiation apparatus according to the first embodiment are as follows: The two columns of cells form a beamwidth beam beam on the segmentation strip and are subjected to a plurality of ion beam illumination steps. Further, in the above-described first and second and third embodiments, there are a plurality of embodiments in the respective embodiments. The ion beam irradiation method and the ion beam irradiation apparatus according to the above embodiment are as follows. The two directions orthogonal to each other are defined as the X direction and the γ direction. As shown in FIG. 5, the clamping direction is formed in the X direction. The extending row forms the dividing strip 22 and the rows extending in the x direction to form the dividing strip 24 and are arranged in a matrix in a matrix of m columns - η rows (m is an integer of 3 or more, and η is an integer of 2 or more). The substrate 10, as exemplified in FIGS. 2 and 6 and the like, irradiates the ion beam 4 having a size larger than the X direction in the γ direction. Furthermore, the arrangement of the rows and columns is not necessarily as shown in the figure. The left and right sides of the pattern are 97132060 15 200924032. The direction is the column and the vertical direction is the row. In this specification, the direction along the length direction (Y direction) of the ion beam 4 is set. For the row, set its vertical direction to the column. Referring to Fig. 5, the substrate 10 is, for example, a quadrilateral (e.g., rectangular) glass-based plate, and a plurality of cells - 20 for forming a flat panel display are formed on the surface thereof. More specifically, each of the columns forming the dividing tape 22 and the respective rows forming the dividing tape 24 extend linearly. Each unit 20 is quadrilateral and substantially the same size. There are usually remaining portions (blanks) of the remaining portions 26, 28 on the outer side of the unit forming region. Fig. 6 shows an enlarged view of a portion of the substrate 10 shown in Fig. 5 and an ion beam 4. When the dimensions of the respective elements are exemplified, the Y-direction dimension W3 of the substrate 10 is, for example, about 1000 匪 to 2000 mm, and the diagonal dimension of each unit 20 is, for example, about 50 Å to 500 mm, and the columns form the Y-direction width of the dividing tape 22 . For example, it is about 4 to 20 mm, and the Y-direction beam width W2 of the ion beam 4 passing through the mask 6 described below is, for example, about 500 mm to 800 mm. 〇 In the example shown in Fig. 5, the number of rows of cells 20 is 5 columns and 6 rows (i.e., m = 5, η = 6), but is not limited thereto. For example, refer to the example of Fig. 18 (four columns and six rows). Far more than the number of such rows. For example, the X direction is substantially horizontal and the Y direction is substantially vertical.

- or vice versa, the X direction is substantially perpendicular to the vertical direction, and the Y direction is substantially water. The flat direction, that is, the XY plane is substantially a vertical plane, but is not limited thereto, and the XY plane may be substantially a horizontal plane or may be A plane that is inclined between a horizontal plane and a vertical plane. In the embodiment, the ion beam irradiation apparatus shown in FIG. 1 is an example of an ion beam generating apparatus that generates an ion beam 4 having a predetermined size in the γ direction, and includes an ion source 2 (in the lower part). The same applies to other embodiments. The ion beam irradiation apparatus shown in the drawings further includes a reticle 6, a reticle driving device 8, a holder 12, a substrate driving device 14, an ion beam monitor 16, and a control device 18. The ion source 2 generates an ion beam 4 having a size larger than the χ direction in the γ direction and a beam width W1 in the γ direction being the size of the above unit 20 including q columns (q is an integer of lgqgm). The reason for this is that if you do not set this, you cannot process at least one column of cells 2 〇. The cross-sectional shape of the ion beam 4 generated by the ion source 2 and the ion beam 4 irradiated to the substrate 10 by the mask 6 is elongated or elongated in the Y direction or substantially rectangular. Such an ion beam 4 is also referred to as a ribbon-shaped ion beam 4. In this embodiment, also referring to FIG. 2, the mask 6 is such that the ion beam 4 generated by the ion source 2 is cut into both ends of the Y direction (the direction is substantially parallel) and the both ends are Shaped in a manner substantially parallel to the x direction: and shaped into two columns of the above-mentioned unit 2() in which the two ends of the ion beam 4 in the Y direction are respectively located at the position of the missing P _ system 1 q and (6) ra - 2) After the beam width W2 on the dividing tape 22 is formed, the upper wire bundle 4 is passed. Therefore, the inner end 6a of the reticle 6 is substantially parallel to the χ direction. The reason for this is that if it is not set, the unit 20 of at least 97132060 17 200924032 1 column cannot be processed. The ion beam 4 is cut by the mask 6, so the maximum value of p is 〇, that is, ? The purpose of $(1. is set to 1)$(111-2) is to satisfy the condition that the two columns of the gripping unit 20 form the splitting strip 22 even when the minimum of 111 (i.e., m = 3). When m = 3, p = 1. In this embodiment, the photomask 6 is provided on both sides of the ion beam 4 in the Y direction. Further, in the above embodiment, the two masks 6 are movable (movable) in the Y direction as indicated by arrows F and G, respectively, and are driven by the mask driving device 8 to be reciprocally linearly driven. Each reticle drive unit 8 is controlled by a control unit 18. A position detector such as an encoder may be provided in each of the mask driving devices 8, and position information of the two inner ends 6a of the mask 6 in the Y direction is supplied from each of the mask driving devices 8 to the control device 18. In this way. The mask 6 can be fixed when the substrate 10 having the fixed unit 20 is processed, and the like, and if it is previously set as the movable type, it can flexibly correspond to the arrangement of the various units 20. A variety of substrates 10. However, as shown in the second and third embodiments described with reference to FIG. 14 to FIG. 21 below, the end portion of the ion beam 4 in the Y direction on both sides of the connection portion 32 is actually provided by the mask 6. When the shaping is in the X direction, the mask 6 may be provided only in advance on the shaping side. Regardless of whether the reticle 6 is disposed on either side or on one side, the ion beam 4 for illuminating the unit 20 through the reticle 6, as exemplified in FIG. 3, preferably has a uniform ion beam current density distribution. Within the scope AR. In this manner, uniform ion beam irradiation treatment (e.g., ion implantation) can be performed for each unit 97132060 18 200924032 20. If the mask 6 is disposed in advance between the ion source 2 and the substrate 1 on the holder 12, the ion beam shaping operation can be realized, but it is preferably arranged as close as possible to the substrate 10. If so, the ion beam 4 will be very small due to the effect of the space charge effect, so that the substrate 10 can be illuminated with a sharp ion beam. 4 The support 12 is used to hold the substrate 10. The shape of the support member 12 and the structure C'1 are not necessarily required to be in the form of a flat plate as shown in the drawings, and are not particularly limited. The substrate driving device 14 has a function of reciprocating linearly moving the substrate 10 and the holder 12 in the meandering direction and the Y direction. In addition, the substrate driving device 14 may have a function of rotating the substrate 1 and the holder 12 and centering on the center portion 10a of the substrate 1 (see, for example, Fig. 4). FIG. 4 shows an example of the structure of the substrate driving device η. The substrate driving device 14 includes an X-direction linear motion mechanism 40 that reciprocates linearly in the x-direction with the support member 12 and the support member 12, a γ-direction straight-moving mechanism 46 that reciprocates linearly in the x-direction, and a central portion of the substrate 10. The rotary rotation of the i〇a centering 52° X direction straightening mechanism 40 includes a guide 42 and a driving portion 44. The Y-direction straight advance mechanism 46 includes a guide 48 and a drive portion 50. The rotating device 52 is an embodiment for rotating the substrate 10 by 180 degrees, and for example, can be unidirectionally rotated in the direction of the arrow R (or in the opposite direction), or can be reversed. The substrate driving device 14 is used in the following ion beam irradiation step, substrate position changing step, and movement and rotation of the substrate 10 in the substrate rotation step. 97132060 19 200924032 The substrate drive unit 14 is controlled by a control device 18 . In this embodiment, the substrate driving skirt 14 has a position detector such as a coder, and the position information of the substrate 1 and the γ-direction is supplied from the substrate driving device 14 to the control device 18. When the substrate 1 is rotated, the positional information of the rotation direction of the substrate 10 is also supplied. The ion beam _ππ_view 16 has a function of measuring the position of both end portions in the γ direction of the photomask β ion beam 4. However, in the case of the embodiment in which the single end portion of the ion beam bundle 4 is shaped by the mask 6 as described above, it is possible to have a function of measuring the position of the end portion. The ion beam monitor 16 is preferably disposed adjacent to the substrate 10 and measures the ion beam 4 at a location near the substrate 10. The ion beam monitor 16 may be, for example, a multi-point ion beam monitor having a plurality of ion beam detectors (for example, Faraday cups) arranged in the γ direction, or a configuration in which one ion beam detector moves in the γ direction. By. Alternatively, it may be a plurality of ion beam currents_electrodes or the like. When the ion beam beam 4 is measured by the sub beam monitor 16, the holder 12 and the substrate 1 are moved (retracted) in advance to a position where the measurement is not hindered. In the case where the photomask 6 is placed close to the substrate, the position of the Y-direction inner end 6a of the mask 6 and the position of the Y-direction end of the ion beam 4 passing through the mask 6 are considered. The same is true for f, and the position information of the Y-direction inner end 6a of the mask 6 can also be used as information indicating the position of the end portion of the ion beam 4 in the γ direction. The ion beam monitor 16 may further have the function of measuring the ion beam current density distribution in the Y direction through the beam 6 ion 97132060 20 200924032 beam 4. An ion beam monitor 16 having such a function and an ion source 2 having a plurality of filaments in the x-direction can be used, for example, according to the technique disclosed in Japanese Patent No. 3736196, according to the ion measured by the ion beam monitor 16. The beam current density distribution - feedback control of the filament current flowing through each filament, thereby controlling the ion beam current density distribution of the ion beam 4 generated by the ion source 2 in the x direction to be uniform. In this way, the ion source 2 can be made to produce an ion beam 4 having a wider range of AR (see Fig. 3) and a higher uniformity of ion beam current density distribution. The control device 18 may also have the above-described uniform control function, and other control devices having the function may be provided in advance. Further, a mass separation magnet for performing mass separation of the ion beam 4 may be provided between the ion source 2 and the substrate 10, more specifically, between the ion source 2 and the reticle 6. Next, a first embodiment using an ion beam irradiation method as described above for an ion beam irradiation apparatus will be described. Referring also to FIGS. 6 and 7, in the ion beam irradiation method of this embodiment, an ion beam 4 is used in which the both ends of the Y direction are shaped to be substantially parallel to the X direction by the mask 6 as described above, and The two rows having the Y-direction end portions 4a, .4b are respectively located in the cell 20 sandwiching the p-column (p is an integer of 1 SpS (m-2)), and the two columns form the beam width W2 on the segmentation tape 22. Fig. 6 is an example of p = 3, and Fig. 7 is an example of p == 2, but is not limited to these.

Further, referring to FIG. 7 to FIG. 10, an ion beam irradiation step of irradiating the substrate 10 with the ion beam 4 toward the substrate 10 while the substrate 10 is moved in the direction of X97132060 21 200924032 is performed, and the ion beam irradiation region 30 is formed on the substrate 10, and The interval between the ion beam irradiation steps, that is, the period in which the ion beam 4 is not irradiated onto the substrate 10, the position of the substrate 10 is changed, and the substrate position change of the unit 20 for irradiating the ion beam 4 is changed, and a plurality of ion beam irradiations are connected. Region 30 and illuminate ion beam 4 towards all cells 20. Further, the connecting portion 32 connecting the plurality of ion beam irradiation regions 30 is positioned on the column forming dividing strip 22. () Further, the ion beam irradiation region 30 is indicated by a hatching attached to the drawing. The above hatching does not indicate the section. Further, in Figs. 7 to 9, it may be seen that the position of the ion beam 4 is changed, but this is not the case, and the position of the ion beam 4 is fixed, and the position of the substrate 10 in the X direction and the Y direction is changed. The same applies to the following Figs. 14 to 16 . In Figs. 18 to 20, the position of the substrate 10 in the X direction changes. To explain the ion beam irradiation method shown in FIG. 7 to FIG. 10 in more detail, first, as shown in FIG. 7, the substrate 10 is moved in the Y direction as needed to form one end portion 4b of the ion beam 4 in a desired column. In the state in which the tape 22 is separated (in this case, the other end portion 4a of the ion beam 4 in the Y direction is located, for example, on the remaining portion 26), the substrate 10 is irradiated toward the substrate 10 while moving in the X direction as indicated by an arrow A. The ion beam 4 is formed on the substrate 10 to form an ion beam irradiation step of the irradiation region 30. Next, as shown by an arrow B in FIG. 8, the substrate is moved in the Y direction by a distance equal to or substantially equal to the beam width W2 of the ion beam 4, and the substrate position of the ion beam tr=〇 is changed according to the 97132260 22 200924032 ion beam. Change step. At this time, let =2:1: the column formed on the 22 formed in the previous ion beam irradiation step as the end of the direction is formed as _22, because the beam bundle width 4 and the other end portion 4b are located at the clamp &quot The list is ^34, so the substrate 4 is on the belt 22. The column of the cutting tape 22 is divided into two, and as described above or aligned as follows, for example, it can be performed by a person, or the position of the substrate 4 can be the same as in the other embodiments described below. Carry out" Secondly, the arrow in 圏8. The direction shown (but opposite to the direction of Fig. 7) is moved - the edge is reduced so that the substrate 1 is turned toward X and the substrate π is cut into B9. Thereby, the two ion beam irradiation regions 4 can be connected. The above-described connecting portion 32 is located on the column forming division tape 22.

The movement of the arrow D in Fig. 9 is equal to or substantially equal to the ion, and the substrate position changing step of changing the distance between the substrate 10 and the beam width W2 of the ion beam 4 is changed. At this time, the "Ma" of the ion is placed on the _-segmented belt 22 in the direction of the ion beam irradiation region 3RY formed in the previous ion beam irradiation step. Thus, since the beam U of the ion beam 4 is the above, if the substrate 1 has a large width in the Y direction, the other end portion of the substrate 4 is placed in the column of the missing P column to form the division band 22 to form the division band. 22 on. If the width of the substrate in the γ 97132060 23 200924032 direction is small, it is located outside the substrate 10 as shown in FIG. Ο Ο Next, as shown by the arrow Ε in Fig. 9, the substrate 10 is moved in the χ direction (but opposite to the direction of Fig. 8) while the ion beam 4 is irradiated toward the substrate 1 to form the substrate 1G. A first-human ion beam irradiation step of the third ion beam irradiation region 3〇 is shown. Thereby, three ion beam irradiation regions 30 can be connected as shown in Fig. 1A. Further, each of the above-described connecting portions 32 may be positioned on the column-dividing strip 22. Thereby, in the case of the above embodiment, the ion beam can be irradiated to all the cells 20 on the substrate, so that ion beam irradiation can be completed. When the substrate 10 has a large width ± width and there is still a cell 20 in which the ion beam irradiation is not completed, the above operation may be repeated. In each of the above-mentioned connecting portions 32, the adjacent two ion beam irradiation regions 30, (a) can be connected without gaps as shown in Figs. 9 and 10, and (6) there can be a gap as shown in Fig. 5 (8). There are overlaps between 12 (4). However, in the case of the case, the connecting portion 32 is placed on the column forming dividing belt 22. At this time, the connection portion is preferably located near the center in the Y direction of the Qingnian material 22. The reason for this is that it is easy to avoid causing the material of the unit 20 to be the same as in the other embodiments described below. In the above description, the words “connection” and “joining unit” are used in the meaning of the three states including the above-mentioned (five) Me), but the meaning of the above three states may be used instead. Line, "seam", etc. "," "joining", "joining", and "the case of the above-mentioned (a) is shown in Fig. 13 is a schematic example of the flow density distribution of the ion beam in the vicinity of the hard portion 32. The connection portion 32 is in the column forming division. With the belt 22, it is possible to prevent the ion beam current density from being disturbed in the unit 2〇 on both sides. Further, in the above-described ion beam irradiation step, instead of moving the substrate 10 in the X direction as in the above embodiment, in order to obtain The required ion beam irradiation amount ' (for example, ion implantation amount) or the like may be performed in plural times including reciprocation. The same applies to the other embodiments described below. According to the ion beam (four) method, a plurality of health beam bundles can be connected. The irradiation region C) 30' is irradiated to the entire unit 20 to perform ion implantation or the like, and the connection portion 32 that connects the plurality of ion beam irradiation regions 3 is placed on the column formation division belt 22, thereby avoiding the connection. The presence of the portion 32 adversely affects the irradiation of the uniform ion beam toward the unit 2 。. Further, the Y-direction end portions 4a of the ion beam 4 and the 牝 are formed by the reticle 6 in a substantially χ direction Since the width of the connecting portion 32 can be reduced as compared with the case where the shaping is not performed in this manner, even when the width of the column forming the dividing tape 22 is small, the connecting portion 32 can be easily arranged in the column to form the dividing portion. The result of the tape 22 is that even if the substrate substrate 10 is divided into money, it can prevent: the base: the processing area required in the reverse 10, that is, the processing of the unit 2 产生 produces a bad shadow, and the straw can be wider than the bundle The wide substrate 1Q is processed. • If the ion source 2 is large in size, the size of the ion beam generator can be suppressed. (In other cases, the following implementations are the same) In the case of a mass-separating magnet, it is also possible to suppress the enlargement of 97132060 200924032. In addition, the step of changing the substrate position is performed, and the connection portion 32 is formed in the column by moving the substrate 1〇::: The dividing tape 22 is sufficient, but it is necessary for the M 吏 substrate 10 to be rotated 180 degrees in its plane, and the substrate is again moved (4) to move the connecting portion 32 to form the dividing tape 22 on the column. , the ion beam irradiation step is not between the ion beam 4 The ion beam current density distribution of the ion uniformity at 4 can be determined by using an ion beam monitor as needed to confirm the uniformity. If the range is within the range, the ion source 2 is generated. Ion beam 4 system. 离子 Ion beam wire degree (four) control, so that all the unit beams on the substrate 1 照射 can be irradiated. Y 20 仃 仃 仃 离子 离子 离子 离子 离子 离子 离子 离子 。 。 。 。 。 。 。 。 。 。 。 。 When the ion beam irradiation device 1R is placed, the above control

The direction of the UY direction is 'received to the silk substrate 1 上 in the direction of the upper shell / no substrate 1 〇 on the column to form the dividing strip 22 两端 both ends 4a ^ and the ion beam (four) Υ direction device ui* placed Information, and use the information to control the position of the substrate driving board to change (4) the sub-beam ride (4), and implement the above-mentioned base unit, she is riding the _ 3G and forming the function of splitting the Si: toward all 97132060' and the above-mentioned connecting portion 32 is located Referring to the drawings, FIG. 6 adds a more specific example of the information given to the control device 18 to 26 200924032 for explanation. Information indicating the position of the substrate 10 in the Y direction is given by the substrate driving device 14. For example, the γ coordinate yl of the one end of the substrate 10 in the direction of the ¥ is given. Information indicating the positions of the both end portions 4a and 4b of the ion beam 4 passing through the mask 6 in the γ direction is given by the ion beam monitor 丨6. For example, the Y coordinates Y1 and γ? of the both end portions such as 4b are given. Further, as described above, the Y coordinate of the inner end 6a of the mask 6 may be used instead.

C indicates that the information on the substrate 10 at the position in the 丫 direction of the division tape 22 is given to the control device 18 as a part of the substrate lag. The information is as follows _. The information indicating the position of the dividing belt 22 in the Y direction is formed by the row on the substrate 10. 9(4) gives 7 coordinates y2, y3, y4, y5, yr" at both ends of the unit 2 () in the column on the substrate H). The above-mentioned Y coordinates ... 卞 卞 ... 亦 亦 亦 亦 亦 亦 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 If it is necessary for each column to form the center of the dividing zone 22, then the operation of the following equation can be performed in the control device 18 = [number 1] ei = (y3 - y4) / 2 e2 = (ys - y6 /2 97132060 27 200924032 (b) The number of columns in which the dividing strips 22 are formed on the substrate 〇, the width b of each unit 20 in the Y direction, the width y of the γ direction of each of the columns 22, and Υ The width c of the remaining portion 26 of the direction. The width d of the remaining portion 28 on the side opposite to the above γ coordinate is not necessary. • Based on the information and the γ-coordinate y! of the γ-direction of the substrate 10, for example, the Y-coordinates y2 and y3 at both ends of the Y-direction of the cells of each column on the substrate 1 are obtained according to the following equation. , y4, y5, y6.·· 'Therefore, the above calculation can also be performed in the control device 18. Others are the same as in the case of (4) above. [Number 2] y2 = yi — c y3 = y2 — b = yi-cb y4 = y3 — a = yi — c — b—a • «· The information of (a) or (b) above is entered, for example, by numerical information. The control device G 18 may also provide the barcode (4) having the above information to the substrate 10 or the substrate storage cassette, etc., and the information is read by the reading head and given to the control device 18. Alternatively, the position of the segmentation tape 22 can be formed by reading the desired column by the camera and the positional information can be imparted to the control skirt 18. Further, it is not necessary to provide the information indicating the Y-direction position of all the columns on the substrate 1 to the control device 18, and to provide at least the position where the connecting portion 32 is formed to form the dividing tape 22. Information. The same applies to the other embodiments described below. 97132060 28 200924032 The ion beam irradiation method according to the first embodiment of the present invention is realized by the ion beam irradiation apparatus according to the first embodiment including the ion source 2, the mask 6, the substrate driving device μ, and the control device 18 as described above. The same effect as the above effect is achieved. (2) The ion beam irradiation method and apparatus according to the second embodiment, in the ion beam irradiation method and the ion beam irradiation apparatus of the second embodiment, the beam width in the Y direction is the size of a cell including more than half of the columns. The ion beam is subjected to two ion beam irradiation steps. FIG. 17 to FIG. 17 are diagrams for explaining an ion beam irradiation method according to a second embodiment.

I and the diagram of the ion beam irradiation device. In the following, the same or corresponding portions as those of the above-described embodiment are denoted by the same reference numerals, and the differences from the above-described first embodiment will be mainly described. Unlike the above-described first embodiment, in the embodiment, it is not necessary to satisfy the condition that the division band 22 is formed in two rows of the clamping unit 2〇 even when m is the smallest, and therefore, m and m are both integers of 2 or more. The same applies to the third embodiment described below. In the above embodiment, for example, as shown in Fig. 14, the beam width W2 in the γ direction is an ion beam 4 having a size of a cell 2 包含 including a half or more of the m columns. 14 is an example of a case where the bundle width % includes three rows of cells 20, but is not limited thereto. Further, 'the ion beam irradiation step of irradiating the substrate 1 to the X direction while irradiating the substrate 1 to the X direction and forming the ion beam irradiation region 30 on the substrate 10 is performed at intervals of the ion beam irradiation step. In other words, during the period in which the ion beam 4 is not irradiated onto the substrate 10, the substrate position changing step of changing the position of the substrate 1 to change the cell 20 for irradiating the ion beam 4 is performed, and the two ion beam irradiation regions 30 are connected to irradiate ions to all the cells 20. Bunch 4. Further, the connecting portion 32 connecting the two ion beam irradiation regions 30 is positioned on the column forming strip, and the gamma of the ion beam 4 is obtained by the mask 6 (see Fig. 2, Fig. 2).

The end portions of the both end portions 4a, 4b at least on the side of the connecting portion 32 are shaped to be substantially parallel to the X direction. In the above case, the end 4 4a of the ion beam 4 opposite to the end portion 4b may be shaped by the mask 6, or may not be shaped. The reason for this is that the end portion 4a is not located on the side of the connecting portion 32. Further, if the condition of the bundle width % is satisfied, the position of the end portion 4a in the Y direction is not limited to a specific position. The example ^' may be located outside the substrate 1G as shown in FIG. 14, or may be located on the substrate - and may be located on the remaining portion 26. It is also not necessary to position the end portion 4a to the control device 18. The same applies to the third embodiment described below. More specifically, the ion beam irradiation method shown in the day 14 to FIG. 17 is as follows: as shown in FIG. 14 , the substrate _γ is moved as necessary, and the end portion 4b of the bamboo 4 is located at a desired level. The column forms a shape on the dividing strip 22: the buck-side causes the substrate 1Q to move in the x-direction as indicated by the arrow A, and irradiates the ion beam 4 toward the substrate 10 to form the ion collecting shown in FIG. 14 on the substrate The ion beam irradiation step of the j-ray region 3G. Its - owing as shown by the arrow in Fig. 15 (or its opposite direction), the implementation of the 97132260 30 200924032 substrate 10, for example, with its central portion l 〇 a centered on the substrate surface 180 degrees, and then as shown in Figure 16 The arrow Β moves the substrate 1 〇 in the γ direction to change the substrate position changing step of the unit 20 that irradiates the ion beam 4 . At this time, the end portion 4b of the ion beam 4 is positioned on the division band 22 in which the end portion of the ion beam irradiation region 30 formed in the previous ion beam irradiation step is located in the γ direction. At this time, it is also possible to simultaneously rotate the substrate 1 as indicated by the arrow R and move as indicated by the arrow B. Next, as shown by an arrow c in Fig. 16, the ion beam 4 is irradiated toward the substrate 1 while the substrate 1 is moved in the χ direction (but opposite to the direction of Fig. 14), and the substrate 10 is formed on the substrate 10 as shown in Fig. 17. The second ion beam of the second ion beam illuminates the region 30 (four). H, the two-beam beam irradiation area 30 can be connected. Further, the connecting portion 32 can be positioned on the column forming dividing belt 22. By this, in the case of this embodiment, all of the cells 20 on the substrate 照射 can be irradiated with an ion beam, thereby completing ion beam irradiation. According to this ion beam irradiation method, the two ion beam irradiation regions 30 can be connected and the ion beam can be irradiated to all the cells 2G, and processing such as ion implantation can be performed. Further, the connection portion of the two ion beam irradiation regions 3〇 is located in the column to form the split Γ ion beam // the presence of the avoidance of the connection portion % has an adverse effect on the uniform irradiation of the ion beam toward the unit. It is possible to reduce the connection portion 32 97132060 31 200924032 by the photomask 6 in which the "45" of the two ends of the ion beam 4 in the direction of the ? = not \32 side is shaped to be substantially flat with respect to the X direction. Since the width is small, even if the width of the column-forming division tape 22 is small, the connection portion 32 can be easily placed on the column-forming division tape 22. 7 As a result, even if one substrate 1 is divided, It is possible to prevent the substrate 1G having a width larger than the beam width from being processed by the processing of the unit 2〇 which is the required processing area in the base = 〇. Further, it is possible to suppress the enlargement of the ion source 2 and the like. When the magnet is separated, it is also possible to suppress the increase in size.

Further, in comparison with the above-described first embodiment, there is an advantage that the mask 6 can be provided (and the mask driving device 8 can be provided when the mask driving device 8 is provided) on one side. In the ion beam irradiation apparatus according to the second embodiment, the ion source 2 generates an ion beam having a beam width 上述 the unit including the half or more of the !!! column. The photomask 6 is formed such that the ion beam 4 generated by the ion source 2 is shaped such that at least the end portion on the side of the connecting portion 32 of the two end portions in the Y direction is substantially parallel to the X direction, and the ion beam 4 is simultaneously The bundle direction width is maintained as the bundle width W2 of the unit 2〇 including the half or more of the above-mentioned m columns, and is passed. Therefore, the mask 6 can also be provided on only one side (the mask driving device 8 can also be provided in the case where the mask driving device 8 is provided). In the case of the above embodiment, the substrate driving device 14 has a function of moving the substrate 10 in the X direction and the Y direction and a function of rotating the substrate 10 in the substrate surface. The control device 18 has a control function of giving information indicating the position of the substrate 10 in the Y direction of the substrate 97132060 32 200924032, indicating the position of the column on the substrate 10 to form the position of the dividing band 22, and indicating the passing of the mask 6 The information on the position of the end portion 4b on the side of the connection portion 32 of the ion beam 4 is controlled by the substrate-driving device 14 using the information, and the above-described ion beam irradiation step is performed twice, and the substrate position changing step is performed to connect the two ions. The beam irradiation region 30 has a function of irradiating the entire unit 20 with the ion beam 4, and a function of causing the above-described connecting portion 32 to be positioned on the column forming the divided strip 22. The information given to the control splitting is more specific. The specific example is substantially the same as that described in the first embodiment, and the repeated description thereof is omitted here. According to the ion beam irradiation apparatus of the second embodiment including the ion source 2, the mask 6, the substrate driving device 14, and the control device 18, the above-described ion beam irradiation method according to the second embodiment can be realized. The same effect. Further, the γ-direction both end portions 4a and 4b of the ion beam 4 may be shaped to be substantially parallel to the X direction by the mask 6. In this case, in the substrate position changing step, the substrate (4) may be moved in the γ direction without rotating the substrate 10, thereby changing the position of the substrate 1 so that the connection port 32 is positioned on the column formation division tape 22. This is because the both end portions 4a and 4b of the substrate 10 in the meandering direction are shaped. Therefore, as in the case of the first embodiment, the both ends of the ion beam 4 can be used without rotating the base plate 1G. The two ion beam irradiation regions 30 are connected to 4a and 4b. At this time, the substrate driving device U can omit the function of rotating the substrate 10 (for example, the rotating device 52). (I) In the ion beam irradiation method and the ion beam irradiation apparatus of the third embodiment, the beam width in the Y direction includes a unit of more than half of the columns. The ion beam of a size is subjected to two ion beam irradiation steps for a substrate having a column forming a division band at a central portion in the Y direction. 18 to 21 are views for explaining an ion beam irradiation method and an ion beam irradiation apparatus according to a third embodiment. The third embodiment and the second embodiment are similar to each other, and the differences from the second embodiment will be mainly described below. In this embodiment, for example, as shown in Fig. 18, the substrate 1 having one of the divided bands 22 formed in the center portion in the Y direction illuminates the ion beam 4. As the ion beam 4, as in the case of the second embodiment, the beam width I in the Y direction includes the ion beam 4 having the size of the cell 2 of the above-described column of the m columns or more. Fig. 18 is an example of a case where m: = 4 and the beam width W2 includes two rows of cells 20, but is not limited thereto. G. An ion beam irradiation step of irradiating the substrate 10 with the ion beam 4 while the substrate 10 is moved in the X direction and forming the ion beam irradiation region 30 on the substrate 10, and the ion beam is irradiated at intervals of the ion beam irradiation step. 4. During the period when the substrate 10 is not irradiated, the substrate 1 is rotated by 18 degrees around the center portion 1A of the substrate, and the substrate rotation step of changing the unit of the ion beam is performed to connect the two substrates. The ion beam illuminates the region 30 and illuminates the ion beam 4 toward all of the early enthalpy 20. Further, the connecting portion 32 connecting the two beam irradiation regions 30 is positioned on the center of the substrate to form the dividing strip 22, and the photomask 4 is replaced by the mask 6 (see Figs. 1 and 2). At least the end portion 4b of the both end portions 4a, 4b in the direction on the side of the connecting portion 32 is shaped to be substantially parallel to the X direction. When the ion beam irradiation method shown in Figs. 18 to 21 is explained in more detail, first, as shown in Fig. 18, the end portion 4b of the ion beam 4 is placed on the division strip 22 in the center of the substrate. The ion beam irradiation step of irradiating the ion beam 4 toward the substrate 10 and forming the ion beam irradiation region 30 shown in FIG. 19 on the substrate 10 while moving the substrate 10 in the X direction as indicated by an arrow A is performed. For example, the position of the mask 6 can be adjusted so that the end portion 4b of the ion beam 4 is positioned in the center of the substrate to form the dividing strip 22. Although it is also possible to move the substrate 10 in the Y direction, it is necessary to move the Y direction of the substrate 10 at this time, so that the simpler method is performed by the mask 6. Next, as shown by an arrow R in FIG. 19 (or a reverse direction thereof), the substrate 10 is rotated 180 degrees in the plane of the substrate centering on the center portion 10a thereof, thereby changing the column of the unit 20 that irradiates the ion beam 4 The substrate rotation step. Thereby, the end portion 4b of the ion beam 4 irradiated in the next ion beam irradiation step is formed in the column in which the end portion of the ion beam irradiation region 30 formed in the previous ion beam irradiation step is located in the Y direction. on. - Next, as shown by an arrow C in FIG. 20, while the substrate 10 is moved in the X direction (opposite to the direction of FIG. 18), the ion beam 4 is irradiated toward the substrate 10, and the substrate 10 is formed on the substrate 10. The second ion beam irradiation step of the second ion beam irradiation region 30. Thereby, two ion beam irradiation regions 97132060 35 200924032 30 can be connected. Further, the connecting portion 32 can be positioned in the center to form the dividing tape 22. Thereby, in the case of this embodiment, the ion beam can be irradiated to all the cells 20 on the substrate 1 to complete the ion beam irradiation. * According to the above-described ion beam irradiation method, the same effects as those achieved by the ion beam irradiation method of the second embodiment described above can be achieved. Further, compared with the second embodiment described above, there is an advantage that the substrate 1〇 can be moved in the γ direction. Therefore, the substrate driving device 14 can omit the function of moving the substrate 10 in the γ direction (for example, the Y-direction straight-moving mechanism 46). In the ion beam irradiation apparatus according to the third embodiment, the photomask 6 is formed by shaping the ion beam 4 generated by the ion source 2 as follows. At least one of the two end portions of the direction is parallel to the side of the connecting portion 32, and the end portion of the connecting portion 32 is located on the side of the central portion of the substrate to form the dividing strip 22' and the ion The beam width of the bundle 4 in the Y direction is maintained so as to pass the beam width W2 of the unit 2 上 of the upper half or more columns. The substrate driving device 14 may not have the substrate 10 facing the Y direction. The function of moving (e.g., the γ-direction straight-moving mechanism 46) may have a function of moving the substrate 1 in the χ direction and a function of rotating the substrate 10 in the plane of the substrate about the center portion 10a. - The above control device 18 In the case of this embodiment, the control-function is such that the substrate driving device 14 is controlled to perform the above-described ion beam irradiation step, and the substrate rotation step is performed to connect the two ion beam irradiation regions 30 to all the cells. The function of the illuminating ion beam & and the function of the above-mentioned 97132060 36 200924032 connecting portion 32 on the central portion of the substrate to form the dividing strip 22. The control device 18 can also control the substrate 1 to γ Since the direction is shifted, information necessary for position control in the Y direction, for example, information indicating the position of the base 1q in the Y direction, information indicating the position of the column on the substrate 1 in the Y direction of the division band 0, and indicating the passing light may be omitted. Information on the position of the end of the ion beam 4 of the cover 6. According to the ion beam irradiation apparatus of the third embodiment including the ion source 2, the mask 6, the substrate driving device 14, and the D device 18, the following: The same effect as the above-described result achieved by the ion beam irradiation method of the third embodiment. (4) Example of ion beam generating device

L. The beam width I in the Y direction is the ion beam generation of the ion beam of a predetermined size as described above. For example, (4) the ion source 2' of the above embodiments may generate a predetermined beam width Wi from the π. The ion source of the ion beam 4; (8) can also be disclosed, for example, in Japanese Patent Application Laid-Open No. Hei-139996, which includes the ion beam of the production, and (in particular, the fan-like direction along the gamma). The electric field generated by the electric field or magnetic money source = "the composition of the ion beam deflecting means for suppressing the expansion of the ion beam to derive the above == beam; (〇二离子3358336号八# "For example, the Japanese patent is made of electric field, The package is difficult to produce and the ion beam is generated by the ion beam. The ion beam generated by the ion source is used to describe the composition of the ion beam 37 200924032. In the case of the above (b), the ion beam is Preferably, the deflecting means further has a function of ion beam paralleling the ion beam. Alternatively, in addition to the ion beam deflecting means, the ion beam parallelizing means for ion beam parallel ion beaming on the downstream side thereof may be further provided. In the above (c) In the case of the shape, it is preferable to further provide an ion beam parallelization means for ion beam parallel ion beaming on the downstream side of the ion beam scanning means. In either case, the ion beam is parallel ion beamed, and the above may be connected. The plurality of ion beam irradiation regions 30 and the connection portion 32 are located in the column forming the division band 22 are easier to perform. According to the present invention, based on the same reason as the ion source of the above (a), in the above (b), In the case of c), the size of the ion beam generating device can be suppressed. Fig. 1 is a schematic view showing an example of the ion beam irradiation device U for carrying out the ion beam irradiation method of the present invention. A plan view of the reticle and the ion beam in Fig. 1 is seen from the direction of the arrow P. Fig. 3 is a view showing an example of the ion beam current density distribution in the Y direction of the ion beam. Fig. 4 is a plan view showing an example of the substrate driving device. Fig. 5 is a plan view showing an example of a substrate in which cells arranged in a matrix are formed in a plane. 97132060 38 200924032 Fig. 6 is a view showing an example of a positional relationship between a substrate, a cell, an ion beam, and the like. Fig. 7 is a view for explaining an ion beam irradiation method and apparatus according to the first embodiment, and Fig. 8 is a view of Fig. 8. Fig. 8 is a view for explaining an ion beam irradiation method and apparatus according to the first embodiment, and Fig. 9 is continued Fig. 9 is a view for explaining an ion beam irradiation method and apparatus according to the first embodiment, and Fig. 10 is a view showing the same. Fig. 10 is a view for explaining an ion beam irradiation method and apparatus according to the first embodiment. Fig. 11 is a view showing another example of the connection portion of the adjacent ion beam irradiation region. Fig. 12 is a view showing still another example of the connection portion of the adjacent ion beam irradiation region. A schematic diagram of a current distribution of ion beam current density in the vicinity of a connecting portion. Fig. 14 is a view for explaining an ion beam irradiation method and apparatus according to a second embodiment, and Fig. 15 is continued. Fig. 15 is a view for explaining an ion beam irradiation method and apparatus according to a second embodiment, and Fig. 16 is continued. Fig. 16 is a view for explaining an ion beam irradiation method and apparatus according to a second embodiment, and Fig. 17 is continued. Fig. 17 is a view for explaining the ion beam irradiation method and apparatus of the second embodiment, and the state of the ion beam irradiation is completed. Fig. 18 is a view for explaining an ion beam irradiation method and apparatus according to a third embodiment, and Fig. 19 is continued. Fig. 19 is a view for explaining an ion beam irradiation method and apparatus according to a third embodiment. Fig. 20 is a view continuously showing. Fig. 20 is a view for explaining the ion beam irradiation method and the apparatus of the third embodiment, and Fig. 21 is continued. Fig. 21 is a view for explaining an ion beam irradiation method and apparatus according to a third embodiment, and showing a state in which ion beam irradiation is completed. [Main component symbol description] 2 Ion source 4 Ion beam 4a ' 4b End portion 6 Photomask 6a Inner end 8 is large (cover drive unit 10 substrate 10a Center portion 12 support device 14 substrate drive device 16 ion beam monitor 18 control device 97132060 40 200924032

20 mouth - early 22 columns forming the dividing belt 24 rows forming the dividing belt 26, 28 remaining portion 30 ion beam irradiation region 32 connecting portion 40 X-direction straight-moving mechanism 42, 48 guide 44, 50 driving portion 46 Y-direction straight-moving mechanism 52 Rotating device a ' b, c, d width A, B, C, D, E, F, G, P, R arrow AR range Wi ' w2 ' w3 beam width Yi, Y2, yi, y2, y3, y4, ys , ye, y7, ys coordinates X, Y direction 97132060 41

Claims (1)

200924032 VII. The scope of application for patents: Sub-nuclear financial law, the two accounting lines of the department are set to χ Yang, facing the surface _ riding secret along the direction of the 延伸 extension of the static and / / Υ direction of the extension (four) into a segmented wire array a plurality of cells ((10) substrate, ion beam irradiation method of an ion beam whose size is larger than the size of the x-direction in a discharge row (m is a triple or more excitation, and is an integer of 2 or more); The method is characterized in that: using two columns of the above-mentioned cells in which the both ends of the Y direction are located at an integer of (5) ❿ 2), the ion beam of the beam width on the segmentation band is formed, and the complex-human-edge is implemented. An ion beam irradiation step of forming an ion beam region on the substrate while the substrate is moved in the x direction, and the ion beam is not incident on the substrate; a step of changing a substrate position in which the position of the substrate is changed (4) to irradiate the ion beam, and connecting a plurality of the ion beam irradiation regions to irradiate the ion beam to all of the cells. Method, and the connecting portion for connecting the plurality of ion beam irradiation area is located on the dicing tape formed of said columns, and by the two photomask γ feed direction of the shaping of the ion beam is substantially parallel to the x-direction. 2. The method of ion beam irradiation according to claim 1, wherein in the step of changing the substrate position, the substrate is placed at a position of the substrate in the γ direction, and the connecting portion is located in the ion beam irradiation. The method is that the two orthogonal to each other are in the direction of the two turns, and the column extending in the X direction is formed in the face: :, χ ^ and the material is distributed along the Υ direction and the _ is = knife a substrate in which a plurality of units of η are each an integer of 2 or more, and an ion beam whose size in the η direction is larger than the size of the X direction; characterized in that the beam is used in the Υ direction and the beam width is used in the Υ direction. An ion beam irradiation step of forming an ion beam irradiation region on the substrate by moving the ion beam of the size of the upper or lower half of the upper column to the substrate while moving the substrate in the x direction a step of changing the substrate position in which the ion beam irradiation step is not irradiated, and the substrate position changing step of changing the position of the substrate to change the position of the substrate is performed. Irradiating the ion beam in the region of the ion beam and irradiating the ion beam to the entire unit. The connecting portion of the two ion beam irradiation regions is located in the column and the two ends of the ion beam are twisted by the photomask. At least the position of the connecting portion side of the 97132060 43 200924032 is shaped to be substantially parallel to the χ direction. 4. The ion beam irradiation method according to claim 3, wherein in the substrate position changing step, the substrate is rotated (10) degrees in the plane and the substrate is moved in the Q direction to change the position of the substrate. - forming the splitting zone by positioning the connecting portion at the above-mentioned column. 5. The ion beam irradiation method according to claim 3, wherein both ends of the ion beam in the γ direction are shaped into a disk X direction by a photomask substantially parallel, and ▲ is changed in the substrate position step. The substrate is moved in the γ direction, and the position of the substrate is changed such that the connecting portion is positioned in the column to form a divided strip. 6. The ion beam irradiation method is characterized in that two directions orthogonal to each other are set to the X side: and the Υ direction 'toward the surface (10) is formed by sandwiching the column extending in the χ direction to form the dividing strip and extending in the Υ direction. a substrate in which a plurality of cells of a m-column η (m and n are integers of 2 or more) are arranged in a matrix, and one of the column-forming sub-bands is formed at a central portion of the G in the γ direction. The ion beam irradiation method of the ion beam of the size of the substrate in the dimension direction of the Y direction; wherein the ion beam of the size of the cell including the half or more of the m columns in the Y direction is used twice An ion beam irradiation step of forming an ion beam irradiation region on the substrate while moving the substrate in the X direction while moving the substrate in the X direction, 97132060 44 200924032 and the ion beam is not separated by the ion beam irradiation step While the substrate is being irradiated, the substrate is rotated 180 degrees around the central portion of the substrate, and the column of the unit that irradiates the ion beam is changed. In the substrate rotating step, the above-mentioned ion beam irradiation region is irradiated to the entire ion beam by the above-mentioned ion beam irradiation region, and the connection portion connecting the two ion beam irradiation regions is formed in the central portion of the base plate. The slit strip is formed by shaping at least an end portion of the both end portions of the ion beam in the γ direction on the side of the connecting portion to be substantially parallel to the X direction by a photomask. 7. An ion-relaying device in which two orthogonal directions are set to an X-direction and a γ-direction to face-to-face _ into a column extending in the X direction to form a sub-h and a 延伸-direction extension to form a division band And arranged in a matrix form as a G^ plate of a plurality of cells of m columns η (the number of 'n is an integer of 2 or more on 3 U), and an ion beam irradiation device that irradiates an ion beam whose size in the direction of the ¥ is larger than the size of the X direction; The method comprises the following steps: the ion beam generating device, the peak of the peak v+丄±^ ¥ direction includes a q-column (q is an integer of m), and the size of the element is undone; The ion beam generated by the beam generating device is shaped such that both ends of γ = are substantially parallel to the X direction, and both ends of the direction are shaped into a common n < r ^ is located in the clamping P column (P is S (m -2) the integer ) Q Q Q Q 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 And the function of moving in the γ direction; and the control device having the function of performing the following control The information indicating the position in the γ direction of the substrate, the information indicating the position in the γ direction of the column forming the division band on the substrate, and the information indicating the position of both ends in the γ direction of the ion beam passing through the mask can be given. Using the information to control the substrate driving device P, and performing ion beam irradiation to form an ion beam irradiation region on the substrate by irradiating the substrate with the ion beam of the photomask while moving the substrate in the X direction. In the step of the ion beam irradiation step, that is, during the period in which the ion beam is not irradiated onto the substrate, a substrate position changing step of connecting the substrate in the γ direction and changing the irradiation of the ion beam is performed. The ion beam irradiation region has a function of irradiating the ion beam to all of the cells, and a function of connecting the connection portions connecting the plurality of ion beams to the irradiation region to form the segmentation band. 8. An ion beam irradiation apparatus in which two directions orthogonal to each other are set to a χ direction and a Y direction, and a split band formed along a χ direction and a row extending in the Y direction are formed in the face to form a split. An ion beam irradiation device that irradiates a gamma square with a plurality of cells in a matrix of m columns (m η is an integer of 2 or more), and an ion beam having a size larger than the size of the X direction; The present invention includes: an ion beam generating device that generates an ion beam having a beam width in a width of the above-mentioned one of the cells of the array of 97312060 46 200924032 or more; and a photomask, the ion generated by the ion beam generating device The bundle is shaped such that at least the end portion on the side of the connecting portion of the two ends in the γ direction is parallel to the χ direction, and the beam width in the γ direction of the ion beam is maintained to include more than half of the upper = column The substrate driving device has a function of moving the substrate in the direction of the substrate and the meandering direction, and a function of rotating the substrate in the substrate surface, and a control device having a beam width of the unit The function of controlling the position indicating the position of the substrate in the x-direction, the information indicating the position of the column forming the zigzag direction on the substrate, and the connection side of the ion beam passing through the photomask are described below. The information on the position of the end portion is controlled by the information, and the substrate driving device is controlled to perform ion beam irradiation on the substrate by irradiating the substrate with the ion beam of the photomask while moving the substrate in the sense direction twice. The ion beam of the region is not irradiated, and the ion beam is not irradiated onto the substrate at the interval of the ion beam irradiation step, and the substrate is rotated by 180 degrees and moved in the γ direction. a substrate position changing step of irradiating the array of the ion beams to connect the two ion beam illuminating regions to the junction of the (four) sub-beams on the entire unit material, so that the connection portion of the two ion beam irradiation regions is connected The above columns form the function of dividing the strip. ^A bundle device, which sets the two fiscal directions orthogonal to each other to the X direction and the Υ direction, and forms an extension in the X direction toward the in-plane shape. The formation is divided into 97132060 200924032 cutting belt and along the γ direction. The extending dicing is a substrate in which a plurality of units are arranged in a matrix and arranged in a matrix of „1 column η rows (m, η are both 2 or more), and the size in the γ direction is larger than the X direction. An ion beam irradiation device of a size ion beam; characterized in that it comprises: an ion beam generating device that generates an ion beam having a beam width in a gamma direction comprising a size of said cell of a column or more of said column; In the mask, the ion beam generated by the ion beam generating device is shaped such that the end portion thereof is substantially parallel to the χ direction, and the beam width in the γ direction of the ion beam is maintained to be more than half of the columns of the m columns. The beam width of the unit is passed through; the substrate driving device has a function of moving the substrate in the x direction and the γ direction; and the control device has a function of controlling to give information indicating the position of the substrate in the x direction Information indicating the position in the gamma direction of the ship-divided zone on the substrate, and information indicating the position of the connecting end portion of the ion beam passing through the photomask, which is difficult to manufacture using the substrate driving device An ion beam irradiation step of irradiating the substrate with the ion beam of the photomask to form an ion beam irradiation region on the substrate while moving the substrate in the x direction, and the ion is irradiated at the interval of the ion beam irradiation step While the beam is not irradiated onto the substrate, the substrate is moved in the γ direction to change the irradiation of the ion beam. a step of changing the substrate position of the cells, connecting the two ion beam irradiation regions and irradiating the ion beam to all of the units of 97132060 48 200924032, and connecting the connecting portions connecting the two ion beam irradiation regions to the above columns to form a segmentation 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 a substrate in which a plurality of cells having a m-column η row (m and η are integers of 2 or more) are formed in a row in the direction of the direction, and the substrate having one of the columns formed in the gamma direction at the central portion in the γ direction is formed. An ion beam irradiation apparatus for irradiating an ion beam having a size larger than a χ direction in a γ direction; characterized in that the ion beam generating apparatus generates a unit having a beam width including a half or more of the 111 columns a size ion beam; a photomask that shapes the ion beam generated by the ion beam generating device into at least the following two ends of the gamma direction The end portion on the side of the portion is substantially parallel to the χ direction, and the end portion on the side of the connection portion is located at a row in the central portion of the substrate, and a split band is formed, and the beam width in the direction of the ion beam is maintained as a package; And the substrate driving device has a function of moving the substrate in the x direction and a function of rotating the substrate in the substrate surface centering on the center of the substrate; and (4) The device has a function of controlling the substrate to be driven to perform two times while moving the substrate toward the U direction, and irradiating the substrate with the ion beam of the photomask to form ions on the substrate In the beam irradiation region, the lining beam irradiation step is performed, and the substrate is rotated by 180 degrees around the center portion of the substrate while the ion beam is not irradiated to the substrate during the period of the _ sub-silver step, 97132060 49 200924032. a substrate rotation step of the above-mentioned unit of the ion beam, connecting the two ion beam irradiation regions and irradiating the ion beam to all of the cells Function, and the connecting portion connecting the two ion beam irradiation area located at the center portion of the column substrate formed with the division function. 97132060 50