KR100920646B1 - Ion beam irradiation device - Google Patents

Abstract

The present invention relates to an ion beam irradiation apparatus capable of performing liquid crystal alignment by irradiating an ion beam to an alignment film of a liquid crystal display device.

The present invention considers the desired pretilt angle to the alignment layer during ion beam irradiation in consideration of the equipment conditions such as the size of the ion gun from which the ion beam is discharged, the size of the substrate to which the ion beam is irradiated, and the processing time of the substrate. By defining a spec on the ion gun structure that emits the ion beam so that this can be formed and the basic alignment characteristics of the alignment film can be secured, there is an effect of improving the reliability of the product with stable alignment characteristics.

Alignment Film, Ion Gun, Ion Beam

Description

Ion beam irradiation device

1 is a schematic cross-sectional view of a general liquid crystal display device.

2 shows a schematic configuration of an ion beam irradiation apparatus for forming a conventional alignment film.

Figure 3 is a graph showing the relationship between the pretilt angle (pretilt angle) according to the irradiation angle (θ₂) of the ion beam in the conventional ion beam irradiation apparatus.

4 schematically shows an ion beam irradiation apparatus according to the present invention;

5 is a conceptual partial perspective view of the ion beam irradiation apparatus according to the present invention.

6 shows another embodiment of the ion beam irradiation apparatus according to the present invention.

<Description of Signs of Major Parts of Drawings>

300: ion beam source 301: plasma forming portion

302, 402: ion gun 310, 410: stage

320, 420: substrate 330, 430: ion beam

340: vacuum chamber 350, 450: alignment film

360: Valve

The present invention relates to an ion beam irradiation apparatus capable of performing liquid crystal alignment by irradiating an ion beam to an alignment film of a liquid crystal display device.

In general, CRT (or CRT: Cathode Ray Tube) has been the most used display device for displaying image information on the screen, which is inconvenient to use because it is bulky and heavy compared to the display area. .

In addition, with the development of the electronics industry, display devices, which have been limitedly used for TV CRTs, have been widely used in personal computers, notebooks, wireless terminals, automobile dashboards, electronic displays, and the like, and transmit large amounts of image information with the development of information and communication technology. As it becomes possible, the importance of next-generation display devices that can process and implement them is increasing.

Such next-generation display devices should be able to realize light and small, high brightness, large screen, low power consumption, and low price, and one of them has recently attracted attention.

The liquid crystal display (LCD) has excellent display resolution than other flat panel display devices and exhibits a response speed that is higher than that of a CRT when implementing a moving image.

As is known, the driving principle of the liquid crystal display device utilizes the optical anisotropy and polarization properties of the liquid crystal.                         

Since the liquid crystal molecules are thin and long in structure, the liquid crystal molecules have directionality and polarization in the molecular arrangement, and the alignment direction of the liquid crystal molecules can be controlled by artificially applying an electromagnetic field to the liquid crystal molecules.

Accordingly, if the alignment direction of the liquid crystal molecules is arbitrarily adjusted, light can be transmitted or blocked according to the alignment direction of the liquid crystal molecules by the optical anisotropy of the liquid crystal, so that the color and the image can be displayed by the light transmittance which is changed accordingly. do.

1 is a schematic cross-sectional view of a general liquid crystal display device.

Referring to FIG. 1, a gate electrode 121 made of a conductive material such as a metal is formed on a transparent first substrate 111, and a gate insulating layer 130 made of silicon nitride (SiNx) or silicon oxide (SiOx) is formed thereon. ) Covers the gate electrode 121.

An active layer 141 made of amorphous silicon is formed on the gate insulating layer 130 on the gate electrode 121, and ohmic contact layers 151 and 152 made of amorphous silicon doped with impurities are formed thereon. .

In addition, source and drain electrodes 161 and 162 made of a conductive material such as a metal are formed on the ohmic contact layers 151 and 152, and the source and drain electrodes 161 and 162 are the gate electrode 121. ) And a thin film transistor (TFT: T).

A passivation layer 170 made of a silicon nitride layer (SiNx) or a silicon oxide layer (SiOx) is formed on the source and drain electrodes 161 and 162, and the passivation layer 170 has a contact hole exposing the drain electrode 162. Has 171.

A pixel electrode 181 made of a transparent conductive material is formed in the pixel area above the passivation layer 170, and the pixel electrode 181 is connected to the drain electrode 162 through a contact hole.

A first alignment layer 191 formed of a material such as polyimide and having a surface in a predetermined direction is formed on the pixel electrode 181.

In this case, the gate electrode 121 is connected to a gate wiring, the source electrode 161 is connected to a data wiring, and the gate wiring and the data wiring are orthogonal to each other to define a pixel region.

Meanwhile, an upper substrate including a transparent second substrate 110 having a predetermined distance from the first substrate 111 is disposed on the lower substrate including the first substrate 111 configured as described above.

A black matrix 120 is formed in a portion corresponding to the thin film transistor under the second substrate 110 to prevent light leakage from occurring in portions other than the pixel region.

A color filter 131 is formed below the black matrix 120, and the color filter 131 is formed by sequentially repeating three colors of red (R), green (G), and blue (B). One color corresponds to one pixel area.

In this case, the color filter 131 may be formed by a dyeing method, a printing method, a pigment dispersion method, an electrodeposition method, or the like.                         

Subsequently, a common electrode 140 made of a transparent conductive material is formed below the color filter 131, and a lower surface of the common filter 140 is formed of a material such as polyimide and has a predetermined direction. The second alignment layer 150 is formed.

Here, the liquid crystal layer 190 is injected between the first alignment layer 191 and the second alignment layer 150, and the liquid crystal molecules of the liquid crystal layer 190 are initially initialized by the alignment directions of the alignment layers 191 and 150. The orientation state is determined.

Hereinafter, a process of forming an alignment layer for determining an initial alignment direction of liquid crystal molecules in a liquid crystal display having the above configuration will be described in more detail.

First, the alignment film is formed by applying a polymer thin film and arranging the alignment film in a predetermined direction.

In general, a polyimide-based organic material is mainly used for the alignment layer, and a rubbing method is mainly used for arranging the alignment layer.

In the rubbing method, first, a polyimide-based organic material is coated on a substrate, the solvent is blown and aligned at a temperature of about 60 to 80 ° C., and then cured at a temperature of about 80 to 200 ° C. to form a polyimide alignment layer. It is a method of forming a variety of orientation directions by rubbing the alignment layer in a certain direction using a rubbing cloth wound with a velvet or the like.

Such a method by rubbing has an advantage that the alignment treatment is easy, suitable for mass production, and has a stable orientation.

However, since the rubbing method is performed through the direct contact between the alignment film and the rubbing cloth, contamination of the cell due to dust generation, destruction of the TFT element previously installed on the substrate due to static electricity generation, and further cleaning process after rubbing. Various problems, such as necessity and non-uniformity of orientation in large-area application, generate | occur | produce, and it has become a problem which reduces the yield in manufacture of a liquid crystal display device.

In order to improve the problem of the rubbing method, various non-rubbing orientation techniques without using a mechanical rubbing method have been proposed.

Such alignment techniques include a method using a Langmuir-Blodgett film (LB film), a photo alignment method using UV irradiation, a method using four-way deposition of SiO ₂ , and micro grooves formed by photolithography. There is a method using micro-groove and a method using ion beam irradiation.

Among these, the method of aligning using an ion beam not only solves the problems caused by the mechanical rubbing method, but can also use a conventional alignment material as it is and can cope with a large area.

2 is a view showing a schematic configuration of an ion beam irradiation apparatus for forming a conventional alignment film.

The ion beam irradiation apparatus is largely divided into three regions, a region 203 in which injected gas is ionized into ions and electrons to form a plasma, and a region in which the ions are extracted and accelerated to pass through in the form of a beam ( 206 and the irradiation area 211 from where the accelerated ion beam 210 is emitted to the substrate.

In the region 203 forming the plasma, the injected gas is ionized with ions, and the ionized ions are extracted and accelerated and irradiated onto the substrate 220.

 That is, the ion beam irradiation device is configured to irradiate the ion beam 210 to the substrate 220 fixed to the holder 221 in the vacuum container 240.

In this case, the ion beam irradiation apparatus includes an ion beam source 200 including a cathode 201 and an anode 202, an ion beam extraction medium 204, and an ion beam acceleration medium 205. ), A vacuum vessel 240 allowing the ion beam 210 generated from the ion beam source 200 to be irradiated to the substrate 220 in a straight line, and the substrate 220 in the vacuum vessel 240. It comprises a holder 221 is fixed to maintain a constant angle.

Although not shown, a shutter may be provided between the ion beam source 200 and the substrate 220 to adjust the time for which the ion beam 210 is irradiated onto the substrate 220.

The ion beam source 200 generates ions and generates an ion beam 210. The ion beam source 200 ionizes the injected gas by the voltage difference between the cathode 201 and the anode 202 to generate a plasma including electrons and ions. In the generated plasma, the ions pass through the passage of the ion beam extraction medium 204 by the extraction electrode and are extracted to the ion beam 210.

The ion beam 210 extracted from the discharged plasma is accelerated by the action of the electric field applied to the ion beam acceleration medium 205 and irradiated at a predetermined angle on the substrate 220.

Here, the substrate 220 is inclined at a predetermined angle with respect to the ion beam 210 to be irradiated, thereby forming a desired alignment direction on the alignment film coated on the substrate 220 using the ion beam 210. And may form a pretilt angle.

As such, the ion beam 210 generated from the ion beam source 200 is directed to the alignment layer on the substrate 220 which is drawn in the normal direction of the ion beam source 200 and is inclined at a predetermined angle θ₁. The pretilt angle of the liquid crystal molecules is determined by the angle θ₂. Θ₁ = θ₂ at this time.

In this case, the irradiation angle θ₂ refers to an angle formed between the irradiation direction of the ion beam 210 and the normal direction of the substrate 220, and the relationship between the irradiation angle θ₂ and the pretilt angle of the ion beam 210. Is shown in FIG. 3.

Referring to FIG. 3, it can be seen that the pretilt angle has different characteristics according to the irradiation angle of the ion beam. When the irradiation angle of the ion beam is between 40 and 60 degrees, the pretilt angle has the largest pretilt angle. The angle has a pretilt angle of 5 degrees or less.

Therefore, in order to obtain a desired pretilt angle in the liquid crystal display, an ion beam having an appropriate irradiation angle on the entire surface of the alignment layer on the substrate must be irradiated with the same energy.

In this case, in order to obtain a desired pretilt angle by irradiating an ion beam to the alignment layer in the liquid crystal display using the ion beam irradiation apparatus, the size of the substrate on which the alignment layer is applied, the time for which the ion beam is irradiated onto the alignment layer, etc. Consideration should be given to the desired pretilt angle and the substrate not to be destroyed by the ion beam.

That is, in the vacuum vessel of the ion beam irradiation apparatus, an ion beam drawn out from the ion beam source in a direction perpendicular to the direction of the major axis of the extraction medium and the acceleration medium is irradiated to the alignment layer to obtain the basic alignment characteristics. An ion beam irradiation device equipped is required.

According to the present invention, the desired pretilt is applied to the alignment layer when the ion beam is irradiated in consideration of the equipment conditions such as the size of the ion gun from which the ion beam is discharged, the size of the substrate onto which the ion beam is irradiated, and the processing time of the substrate. It is an object of the present invention to provide an ion beam irradiation apparatus that allows an angle to be formed and ensures basic alignment characteristics of an alignment film.

In order to achieve the above object, the ion beam irradiation apparatus according to the present invention includes a vacuum chamber, an ion gun from which the ion beam is drawn, and a substrate to which the ion beam is irradiated and moved in one direction, and 1.6 It is characterized by satisfying the relational expression of × 10 ⁻⁴ ≦ (Lg × I × T) /Ls≦1.6×10 ⁻² . Where I is the current intensity of the ion beam, T is the process time at which the ion beam is irradiated onto the substrate, Lg is the length in the direction of movement of the substrate in the ion gun, and Ls is the length in the direction of movement of the substrate.

Further, in order to achieve the above object, the ion beam irradiation apparatus according to the present invention includes a vacuum chamber, an ion gun from which the ion beam is drawn out, and a substrate to which the ion beam is irradiated, and is 1.6 × 10. ^It satisfies the relation of ^-4 ≦ I × T × Sg / Ss ≦ 1.6 × 10 ⁻² (wherein I is the current intensity of the ion beam, T is the process time at which the ion beam is irradiated onto the substrate, Sg : Area of the ion beam exiting the ion gun, Ss: Area of the substrate)

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

4 is a view schematically showing an ion beam irradiation apparatus according to the present invention.

As shown in FIG. 4, in the ion beam irradiation apparatus according to the present invention, the ion beam 330 is irradiated onto the entire surface of the substrate 320 as the substrate 320 moves in one direction.

The ion beam irradiation apparatus ionizes the injected gas into ions, accelerates the ionized ions, and discharges the ionized ions to the substrate 320, and ions generated from the ion beam source 300. A vacuum chamber 340 allowing the beam 330 to be irradiated to the substrate 320 in a straight line, a stage 310 for fixing the substrate 320 in the vacuum chamber to move in one direction, and the ion beam Each time the irradiation is completed, it comprises a valve 360 which can discharge the gas and move the stage 310 from outside to inside, from inside to outside.

The ion beam source 300 accelerates a plasma forming unit 301 in which the injected gas is separated into ions and electrons to form a plasma, and an ion beam 330 formed in the plasma forming unit 301 in a predetermined form. And an ion gun 302 drawn out to the substrate 320.

Although not shown, an ion beam irradiated to the shutter or the substrate 320 between the ion beam source 300 and the substrate 320 to adjust the time for which the ion beam 330 is irradiated to the substrate 320. A mask may be separately provided to adjust the amount of 330.

At this time, the stage 310 is mounted with the substrate 320 on which the alignment film 350 is coated and moved together. As the alignment film 350, polyimide, SiO ₂ , SiC, Si ₃ N ₄ , Al ₂ O ₃ , CeO ₂ , SnO ₂ , glass, ZnTiO ₂ , DLC (Diamond-Like Carbon) can be used.

The ion beam source 300 generates ions and generates an ion beam 310. The plasma containing electrons and ions is ionized by ionizing a gas injected by a voltage difference between a cathode and an anode. In the generated plasma, ions pass through the ion gun by the extraction electrode and are extracted to the ion beam 330 of a predetermined type.

The ion beam 330 drawn from the discharged plasma is accelerated by the action of an electric field to be irradiated with a predetermined angle on the substrate 320.

Here, the ion gun 302 is inclined at a predetermined angle with respect to the substrate 320 fixed on the stage 310, the ion beam 330 drawn through the ion gun 302 is The substrate 320 is inclined at a predetermined angle to be irradiated.

In addition, the stage 310 holding the substrate 320 moves at a predetermined speed in one direction so that the ion beam 330 is drawn out at a predetermined angle from the ion gun 302 on the substrate 320. The ion beam 330 may be irradiated on the entire surface of the alignment layer 350 formed at the.

As a result, a desired alignment direction may be formed on the alignment layer 350 coated on the substrate 320 using the ion beam 330, and a pretilt angle may be formed.

At this time, an alignment film 350 of an organic material such as polyimide is coated on the substrate 320. The organic material used as the alignment film 350, such as polyimide, has a main chain and side chains as chemical structures. divided into side chains.

The main chain serves to align the liquid crystal molecules in one direction, and the side chain serves to form a pretilt angle.

In particular, the side chain reacts upon irradiation with the ion beam so that a predetermined portion is broken so that the liquid crystal molecules are oriented with orientation upon orientation.                     

As such, the ion beam 330 generated from the ion beam source 300 is drawn out in the inclined direction of the ion gun 302 and irradiated to the alignment layer 350 on the substrate 320 at a predetermined angle θ. Thus, the pretilt angle of the liquid crystal molecules is determined.

Hereinafter, a process of aligning the substrate 320 on which the alignment layer 350 is formed using the ion beam irradiation apparatus according to the present invention will be described in detail.

First, the alignment treatment process using the ion beam irradiation apparatus according to the present invention is largely divided into three stages, and the stage 310 fixing the substrate 320 forming the alignment layer 350 is referred to as the ion beam irradiation apparatus. Loading before being introduced, irradiating the ion beam 330 to the substrate 320 when the stage 310 is moved to the vacuum chamber 340 of the ion beam irradiation apparatus, and the substrate When the ion beam 330 is irradiated to the front of the 320 is made to include the step of exiting the outside of the ion beam irradiation apparatus.

An alignment layer 350 is formed on the substrate 320, and the substrate 320 is fixed to the stage 310 and loaded before being introduced into the vacuum chamber 340 of the ion beam irradiation apparatus.

When the valve 360 of the ion beam irradiation apparatus is opened, the stage 310 is drawn into the vacuum chamber 340 and set.

Thereafter, the stage 310 is moved in one direction at a predetermined speed in the vacuum chamber 340, and at this time, a bar type (bar-) is inclined at a predetermined angle (θ) with respect to the substrate 320 at a predetermined position. The ion beam 330 is extracted from the ion gun 302 of the type) and irradiated onto the substrate 320.

Since the stage 310 is moving at a constant speed, the alignment layer 350 formed on the substrate 320 is oriented to the entire surface by the ion beam 330 irradiated at an angle to the substrate 320, thereby pretilting angle. Will form.

When the alignment process is completed over the entire surface of the substrate 320 by the bar type ion gun 302, the valve 360 of the ion beam irradiation apparatus is opened, and the stage 310 is a vacuum chamber 340. It is discharged to the outside.

At this time, in the method of irradiating and orienting the ion beam as described above, in order to secure basic alignment characteristics, the size of the ion gun 302 from which the ion beam 330 is discharged from the ion beam irradiation apparatus and the ion beam 330 Equipment conditions such as the size of the substrate 320 to be irradiated and the time that the substrate 320 is processed should be considered.

That is, the ion beam irradiation apparatus according to the present invention has an ion gun 302 structure in which the alignment film 350 ensures basic alignment characteristics and a desired pretilt angle can be formed.

5 is a conceptual partial perspective view of the ion beam irradiation apparatus according to the present invention, which shows a process in which an alignment film applied to a substrate is oriented by an ion beam.

Referring to FIG. 5, the ion beam 330 drawn from the bar type ion gun 302 is irradiated to the substrate 320 by being drawn in a direction in which the ion gun 302 is inclined with respect to the substrate 320. do.

In this case, the substrate 320 is moved in one direction, and thus the entire surface of the alignment layer 350 on the substrate 320 is aligned by the ion beam 330 drawn from the ion gun 302.

Here, the substrate 320 is preferably moved at a constant speed for uniformity of the orientation, and the ion gun 302 draws a predetermined amount of the ion beam 330 for a unit time and a unit area.

In this case, when the number of ions per unit area injected into the substrate 320 is dose, the amount of ion beam dose satisfied for the alignment layer 350 formed on the substrate 302 to have basic alignment characteristics is 1.0 × 10. ^The conditions must be satisfied within the range of ¹⁵ (EA / cm ² ) to 1.6 × 10 ¹⁷ (EA / cm ² ).

If the ion beam dose is 1.0 × 10 ¹⁵ (EA / cm ² ) or less, it may not have stable alignment characteristics, and if 1.6 × 10 ¹⁷ (EA / cm ² ) or more, a problem occurs that the surface of the alignment layer is destroyed.

Therefore, the above conditions are conditions to be applied regardless of the ion beam irradiation method and are basic conditions for securing basic alignment characteristics.

Equipment conditions for satisfying the basic orientation characteristics in the ion beam irradiation apparatus according to the present invention can be derived as follows.

First, the dose of the ion beam satisfying the basic alignment characteristics, the size of the substrate 320 (the length of the long side and the length of the short side), the area where the ion beam 330 is discharged from the ion gun 302, that is, the size of the discharge port Take into account the length of the long side and the length of the short side and the process time required to process one substrate.

Here, as shown in FIG.

I (A): current strength of the ion beam emitted from the ion gun in the ion beam irradiation device (current, amperes)

Lg: Length of the short side of the outlet of the ion gun from which the ion beam is discharged (length of the moving direction of the substrate) (cm)

Dg: Length of the long side of the outlet of the ion gun from which the ion beam is discharged (length perpendicular to the moving direction of the substrate) (cm)

Ls: Length of substrate moving direction (cm)

Ds: Length perpendicular to the moving direction of the substrate (cm)

T: Process time required for processing one substrate (sec, second)

It is defined as.

And about the amount of ion beam dose,

Nd: Number of ions emitted from the ion gun per unit area (cm ² ) per unit time (sec) (EA / cm ² * sec)

Ng: Total number of ions discharged from the ion gun during the time T during which one substrate moves (EA)

Ns: Total number of ions required by the substrate during the time T during which one substrate moves (EA)                     

Shall be.

Then, the number Nd of ions discharged from the ion gun 302 per unit area (cm ² ) per unit time (sec) is related to the intensity (I) of the current of the ion beam and the charge amount (Qi) of each ion. .

Nd = I / Qi

Here, Qi is 1.6 x 10 ^-19 (C) in the amount of charge of each ion.

therefore,

Nd = I × 6.25 × 10 ¹⁸ (EA / cm ² * sec)

Becomes

In addition, the number Ng of total ions discharged from the ion gun during the time T (sec) during which one substrate is moved is related to the outlet area (Lg x Dg) (cm ² ) of the ion gun.

Ng = Nd × T × Lg × Dg

= I × T × Lg × Dg × 6.25 × 10 ¹⁸ (EA) ---- (1)

Becomes

In addition, the total number Ns of ions required for securing the basic alignment characteristics of the substrate must satisfy the irradiation condition of the ion beam per unit area.

As mentioned above, in order for the alignment layer formed on the substrate to have basic alignment characteristics, the irradiation conditions of the ion beam per unit area satisfy 1.0 × 10 ¹⁵ (EA / cm ² ) to 1.0 × 10 ¹⁷ (EA / cm ² ). shall.

Therefore, the total number of ions Ns required by the substrate during the time T (sec) during which one substrate moves is required to satisfy the following conditions because the area of the substrate is Ls x Ds.

Ls × Ds × 1.0 × 10 ¹⁵ (EA) ≤ Ns ≤ Ls × Ds × 1.0 × 10 ¹⁷ (EA) ---- (2)

In the above formulas (1) and (2), the total number of ions discharged from the ion gun during the time T during the movement of one substrate (Ng) and the total ions required by the substrate during the time during the movement of the substrate (T) The number (Ns) should basically be the same, so

Ls × Ds × 1.0 × 10 ¹⁵ ≤ I × T × Lg × Dg × 6.25 × 10 ¹⁸ ≤ Ls × Ds × 1.0 × 10 ¹⁷

Since the length Dg perpendicular to the moving direction of the substrate at the outlet of the ion gun is basically the same as the effective length Ds irradiating the ion beam to the substrate during the actual process, Dg may be replaced with Ds.

therefore,

Ls × Ds × 1.0 × 10 ¹⁵ ≤ I × T × Lg × Ds × 6.25 × 10 ¹⁸ ≤ Ls × Ds × 1.0 × 10 ¹⁷

In conclusion,

1.6 × 10 ^-4 ≤ (Lg × I × T) / Ls ≤ 1.6 × 10 ^-2 ------ (3)

Has the condition

That is, in order to secure the basic alignment characteristics when the substrate on which the alignment film is formed is subjected to alignment treatment using a bar type ion beam irradiation apparatus, the ion beam irradiation apparatus is designed to satisfy the relational expression of (3). Should be.

6 is a view showing another embodiment of the ion beam irradiation apparatus according to the present invention.

As shown in FIG. 6, the present invention can be applied not only to the bar-type ion gun 302, but also to the cylindrical ion gun 402, by fixing the substrate as well as in the apparatus for moving the substrate. It is also applicable to an apparatus for orientation treatment.

6 (a) is a cross-sectional view schematically showing that the substrate 420 is oriented in the vacuum chamber of the ion beam irradiation apparatus according to the present invention, Figure 6 (b) is an ion beam irradiation apparatus according to the present invention Is a view schematically showing a process of performing an orientation treatment using a different aspect.

As shown in FIG. 6, the ion gun 402 irradiates the ion beam 430 to the front surface of the substrate 420 in a cylindrical shape, and the area Sg of the outlet of the ion gun 402 is the substrate 420. It is preferable to be equal to or larger than the area Ss of.

The substrate 420 is inclined at a predetermined angle with respect to the irradiation direction of the ion beam 430 drawn from the ion gun 402 and is fixed to the stage 410. 450 is formed.

As the alignment layer 450, polyimide, SiO ₂ , SiC, Si ₃ N ₄ , Al ₂ O ₃ , CeO ₂ , SnO ₂ , glass, ZnTiO ₂ , DLC (Diamond-Like Carbon), or the like may be used. have.

Here, in the formula (1) derived by the process as described above,

Ng = Nd × T × Lg × Dg

= I × T × Sg × 6.25 × 10 ¹⁸ (EA) ------ (4)

And in formula (2),

Ss × 1.0 × 10 ¹⁵ (EA) ≤ Ns ≤ Ss × 1.0 × 10 ¹⁷ (EA) ------ (5)

Becomes

Therefore, in the above formulas (4) and (5), the total number of ions discharged from the ion gun (Ng) during the time T during the movement of one substrate and the total amount required by the substrate during the time T during the movement of one substrate Since the number of ions (Ns) should basically be the same,

Ss × 1.0 × 10 ¹⁵ ≤ I × T × Sg × 6.25 × 10 ¹⁸ ≤ Ss × 1.0 × 10 ¹⁷ ----- (6)

1.6 × 10 ^-4 ≤ I × T × Sg / Ss≤ 1.6 × 10 ^-2 --- (7)

Can be obtained.

That is, when the ion gun 402 irradiates the ion beam 430 to the substrate 420 having the predetermined area Ss by using the ion beam irradiation apparatus having the predetermined area Sg, the ion gun 402 is on the substrate 420. In order for the formed alignment film 450 to satisfy basic alignment characteristics, the ion beam irradiation apparatus must be designed so that the relational expressions (6) and (7) are satisfied.

Although the present invention has been described in detail through specific embodiments, this is for explaining the present invention in detail, and the ion beam irradiating apparatus according to the present invention is not limited thereto, and the technical features of the present invention are well known in the art. It is obvious that modifications and improvements are possible by the knowledgeable.

The present invention has a stable orientation characteristics by defining a spec (spec) for the structure of the ion gun that emits the ion beam so that the alignment film oriented by the ion beam in the ion beam irradiation apparatus to ensure the basic orientation characteristics It has the effect of improving the trust of.

Claims (6)

A vacuum chamber, an ion gun from which the ion beam is drawn, and a substrate which is irradiated with the ion beam and moves in one direction, and includes 1.6 × 10 ⁻⁴ ≦ (Lg × I × T) / Ls ≦ 1.6 × An ion beam irradiation apparatus characterized by satisfying a relational expression of 10 ⁻² . Where I is the current intensity of the ion beam, T is the process time at which the ion beam is irradiated onto the substrate, Lg is the length in the direction of movement of the substrate in the ion gun, and Ls is the length in the direction of movement of the substrate. The method of claim 1, The ion gun is an ion beam irradiation apparatus, characterized in that the bar (type). The method of claim 1, And the length of the long side in the ion gun is equal to a length whose effective length is at least perpendicular to the direction of movement in the substrate. The method of claim 1, And the total number of ions discharged from the ion gun is the same as the total number of ions irradiated to the substrate. The method of claim 1, The total number of ions irradiated onto the substrate during the movement of one substrate may satisfy a range of 1.0 × 10 ¹⁵ (EA / cm ² ) to 1.0 × 10 ¹⁷ (EA / cm ² ) with respect to the unit area. Ion beam irradiation device. A vacuum chamber, an ion gun from which the ion beam is drawn out, and a substrate to which the ion beam is irradiated, and have a relationship of 1.6 × 10 ^-4 ≤ I × T × Sg / Ss ≤ 1.6 × 10 ^-2 . The ion beam irradiation apparatus characterized by the above-mentioned. Where I is the current intensity of the ion beam, T is the process time at which the ion beam is irradiated onto the substrate, Sg is the width of the area where the ion beam is emitted from the ion gun, and Ss is the width of the substrate.

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