KR100454846B1 - Ion beam irradiation for forming an alignment layer - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for forming an alignment film having uniform alignment characteristics in a liquid crystal display device. More particularly, the present invention relates to an ion beam irradiation apparatus for uniformly liquid crystal alignment by irradiating an alignment film with an ion beam having uniform energy and irradiation direction. It is about.

More specifically, the present invention relates to an ion beam irradiation apparatus for irradiating an alignment film with an ion beam having uniform energy and irradiation direction to make the liquid crystal alignment uniform.

Here, an ion beam source having a mesh structure capable of adjusting the size of the passage or blocking portion of the integrated medium or drawing the ion beam density differently according to a region is formed so that the energy of the ion beam acts the same on any part of the substrate. By doing so, there is an effect of improving the uniformity of liquid crystal alignment.

Description

Ion beam irradiation for forming an alignment layer

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for forming an alignment film having uniform alignment characteristics in a liquid crystal display device. More particularly, the present invention relates to an ion beam irradiation apparatus for uniformly liquid crystal alignment by irradiating an alignment film with an ion beam having uniform energy and irradiation direction. It is about.

In general, CRT (or CRT: Cathode Ray Tube) has been the most used display device for displaying image information on the screen, which is inconvenient to use because it is bulky and heavy compared to the display area. .

In addition, with the development of the electronics industry, display devices, which have been limitedly used for TV CRTs, have been widely used in personal computers, notebooks, wireless terminals, automobile dashboards, electronic displays, and the like, and transmit large amounts of image information with the development of information and communication technology. As it becomes possible, the importance of next-generation display devices that can process and implement them is increasing.

Such next-generation display devices should be able to realize light and small, high brightness, large screen, low power consumption, and low price, and one of them has recently attracted attention.

The liquid crystal display (LCD) has characteristics that are superior to other flat panel display devices and that the quality of the liquid crystal display is faster than that of a CRT.

As is known, the driving principle of the liquid crystal display device utilizes the optical anisotropy and polarization properties of the liquid crystal.

Since the liquid crystal molecules are thin and long in structure, the liquid crystal molecules have directionality and polarization in the molecular arrangement, and the direction of the molecular arrangement can be controlled by artificially applying an electromagnetic field to the liquid crystal molecules.

Accordingly, if the alignment direction is arbitrarily adjusted, light may be transmitted or blocked according to the alignment direction of the liquid crystal molecules by optical anisotropy of the liquid crystal, and thus color and image may be displayed by varying light transmittance.

1 is a schematic cross-sectional view of a general liquid crystal display device.

Referring to FIG. 1, a gate electrode 121 made of a conductive material such as a metal is formed on a transparent first substrate 111, and a gate insulating layer 130 made of silicon nitride (SiNx) or silicon oxide (SiOx) is formed thereon. ) Covers the gate electrode 121.

An active layer 141 made of amorphous silicon is formed on the gate insulating layer 130 on the gate electrode 121, and ohmic contact layers 151 and 152 made of amorphous silicon doped with impurities are formed thereon. .

In addition, source and drain electrodes 161 and 162 made of a conductive material such as a metal are formed on the ohmic contact layers 151 and 152, and the source and drain electrodes 161 and 162 are the gate electrode 121. ) Together with the thin film transistor (T).

A passivation layer 170 made of a silicon nitride layer (SiNx), a silicon oxide layer (SiOx), or an organic insulating layer is formed on the source and drain electrodes 161 and 162, and the passivation layer 170 forms a drain electrode 162. It has a contact hole 171 to expose.

A pixel electrode 181 made of a transparent conductive material is formed in the pixel area above the passivation layer 170, and the pixel electrode 181 is connected to the drain electrode 162 through a contact hole.

A first alignment layer 191 formed of a material such as polyimide and having a surface in a predetermined direction is formed on the pixel electrode 181.

In this case, the gate electrode 121 is connected to a gate wiring, the source electrode 161 is connected to a data wiring, and the gate wiring and the data wiring are orthogonal to each other to define a pixel region.

Meanwhile, an upper substrate including a transparent second substrate 110 having a predetermined distance from the first substrate 111 is disposed on the lower substrate including the first substrate 111 configured as described above.

A black matrix 120 is formed in a portion corresponding to the thin film transistor under the second substrate 110 to prevent light leakage from occurring in portions other than the pixel region.

A color filter 131 is formed below the black matrix 120, and the color filter 131 is formed by sequentially repeating three colors of red (R), green (G), and blue (B). One color corresponds to one pixel area.

In this case, the color filter 131 may be formed by a dyeing method, a printing method, a pigment dispersion method, an electrodeposition method, or the like.

Subsequently, a common electrode 140 made of a transparent conductive material is formed under the color filter 131, and a lower surface of the common filter 140 is formed of a material such as polyimide, and the surface of the color filter 131 is formed in a predetermined direction. The second alignment layer 150 formed to have is formed.

Here, the liquid crystal layer 190 is injected between the first alignment layer 91 and the second alignment layer 150, and the liquid crystal molecules of the liquid crystal layer 200 are initially initialized by the alignment directions of the alignment layers 191 and 150. The orientation state is determined.

Hereinafter, a process of forming an alignment layer for determining an initial alignment direction of liquid crystal molecules in a liquid crystal display having the above configuration will be described in more detail.

First, the alignment film is formed by applying a polymer thin film and arranging the alignment film in a predetermined direction.

In general, a polyimide-based organic material is mainly used as the alignment layer, and a rubbing method is mainly used as a method of arranging the alignment layer.

In the rubbing method, a polyamide-based organic material is first applied onto a substrate, and the solvent is blown and aligned at a temperature of about 60 to 80 ° C., and then cured at a temperature of about 80 to 200 ° C. to form a polyamide alignment layer. Thereafter, a variety of alignment patterns are formed by rubbing the alignment layer in a predetermined direction using a rubbing cloth wound with a velvet or the like.

Such a method by rubbing has the advantage of easy alignment treatment, which is suitable for mass production, stable orientation and easy control of the pre-tilt angle.

However, since the rubbing method is performed through direct contact between the alignment layer and the rubbing cloth, contamination of the cell due to particle generation, destruction of the TFT element previously installed on the substrate due to static electricity generation, and additional cleaning after rubbing. Various problems, such as the necessity of the process and non-uniformity of the orientation in the large area application, are generated, resulting in a drop in yield in manufacturing the liquid crystal display.

In order to improve the problem of the rubbing method, a variety of non-rubbing orientation techniques have been proposed that do not use a mechanical rubbing method.

Such alignment techniques include a method using a Langmuir-Blodgett film (LB film), a photo alignment method using UV irradiation, a method using a four-sided deposition of SiO ₂ , a micro groove formed by photolithography. There is a method using a micro-groove, and a method using an ion beam irradiation.

Among these, the method of aligning by using an ion beam not only solves the problems caused by the mechanical rubbing method, but can also use a conventional aligning material as it is and can cope with a large area.

2 is a view showing a schematic configuration of an ion beam irradiation apparatus for forming a conventional alignment film.

The ion beam irradiation apparatus is largely divided into three regions, a region 203 in which injected gas is ionized into ions and electrons to form a plasma, and a region in which the ions are extracted in the form of a beam and accelerated to pass through ( 206 and the irradiation area 211 from where the accelerated ion beam 210 is emitted to the substrate.

In the region 203 forming the plasma, the injected gas is ionized with ions, and the ionized ions are extracted and accelerated and irradiated onto the substrate 220.

That is, the ion beam irradiation device is configured to irradiate the ion beam 210 to the substrate 220 fixed to the holder 221 in the vacuum container 240.

In this case, the ion beam irradiation apparatus includes an ion beam source 200 including a cathode 201 and an anode 202, an ion beam extraction medium 204, and an ion beam acceleration medium 205. ), A vacuum vessel 240 allowing the ion beam 210 generated from the ion beam source 200 to be irradiated to the substrate 220 in a straight line, and the substrate 220 in the vacuum vessel 240. It comprises a holder 221 is fixed to maintain a constant angle.

Although not shown, a shutter may be provided between the ion beam source 200 and the substrate 220 to adjust the time for which the ion beam 210 is irradiated onto the substrate 220.

The ion beam source 200 generates ions and generates an ion beam 210. The ion beam source 200 ionizes the injected gas by the voltage difference between the cathode 201 and the anode 202 to generate a plasma including electrons and ions. In the generated plasma, the ions pass through the passage of the ion beam extraction medium 204 by the extraction electrode and are extracted to the ion beam 210.

The ion beam 210 extracted from the discharged plasma is accelerated by the action of the electric field applied to the ion beam acceleration medium 205 and irradiated at a predetermined angle on the substrate 220.

Here, the substrate 220 is inclined at a predetermined angle with respect to the ion beam 210 to be irradiated, thereby forming a desired alignment pattern on the alignment film coated on the substrate 220 using the ion beam 210. It is possible to form an initial alignment state of the liquid crystal molecules, that is, pretilt.

In this case, an alignment layer of an organic material such as polyimide is coated on the substrate 220. The organic material used as the alignment layer, such as polyimide, is divided into a main chain and a side chain as a chemical structure. Lose.

The main chain serves to align the liquid crystal molecules in one direction, and the side chain serves to form a pretilt angle.

In particular, the side chain reacts upon irradiation with the ion beam so that a predetermined portion is broken so that the liquid crystal molecules are oriented with orientation upon orientation.

As such, the ion beam 210 generated from the ion beam source 200 is directed to the alignment layer on the substrate 220 which is drawn in the normal direction of the ion beam source 200 and is inclined at a predetermined angle θ₁. The pretilt angle of the liquid crystal molecules is determined by the angle θ₂.

In this case, the irradiation angle θ₂ refers to an angle formed between the irradiation direction of the ion beam 210 and the normal direction of the substrate 220, and the relationship between the irradiation angle θ₂ and the pretilt angle of the ion beam 210. Is shown in FIG. 3.

Referring to FIG. 3, it can be seen that the pretilt has different characteristics according to the irradiation angle of the ion beam. When the irradiation angle of the ion beam is between 40 and 60 degrees, it has the maximum pretilt angle and the front and rear irradiation angles. Has a pretilt angle of 5 degrees or less.

For reference, about 5 degrees of pretilt angle of the liquid crystal molecules is required in the case of a TN mode type liquid crystal display (Twisted Nematic LCD), and in the case of an IPS mode type liquid crystal display (In-Plane Switching LCD), A pretilt angle of about 2 degrees is required.

Therefore, in the case of the TN mode type liquid crystal display, the irradiation angle of the ion beam is set to 40 to 50 degrees, and in the case of the IPS mode type liquid crystal display, the ion beam is irradiated by setting the irradiation angle of the ion beam to 10 to 20 degrees. .

Therefore, in order to uniformly obtain a desired pretilt angle in the liquid crystal display, an ion beam having an appropriate irradiation angle on the entire surface of the alignment layer on the substrate must be irradiated with the same energy.

At this time, the ion beam drawn out from the ion beam source in a direction perpendicular to the direction of the long axis of the extraction medium and the acceleration medium is irradiated onto the alignment layer so that the ion beam reaches the substrate at the desired irradiation angle in order to obtain a desired pretilt angle. The substrate should be tilted so that it can.

However, when the substrate is inclined at a predetermined angle, the distance from the ion beam source to the substrate is not constant at the upper side and the lower side, so that the effect of the ion beam on the substrate surface is different according to the distance.

In addition, the ion beam drawn out from the ion beam source in a direction perpendicular to the long axis direction of the extraction medium and the acceleration medium is difficult to maintain its straightness due to collision or interaction between the ions and diffusion of particles.

Since the distance from the ion beam source to the substrate is significant, the ion beam drawn from the ion beam source can vary considerably from the desired irradiation angle when it reaches the substrate.

Therefore, when the ion beam reaches the substrate for the same reason, the difference is not incident at the same irradiation angle and the difference becomes deeper as it moves away from the center of the substrate, and the ion beam is not irradiated with the same energy on the substrate. The problem is that the effect is different.

4 is a view conceptually showing the relationship between the irradiation direction of the ion beam and the ion beam arrival distance according to the position of the substrate in the ion beam irradiation apparatus for forming a conventional alignment film.

In this case, the ion beam source 300 from which the ion beam 310 is drawn is depicted as one point to clearly show the difference in the angle at which the ion beam 310 is irradiated according to the position of the substrate 320. In this case, the ion beam 310 is diffused without reaching straight according to its characteristics to reach each position of the substrate 320.

In order to obtain a desired pretilt, the ion beam 310 irradiated from the ion beam source 300 to the substrate 320 at a predetermined angle θ₂ reaches the surface of the substrate 320, and then the irradiation angle of the ion beam 310. Is varied from the maximum θlarge to the minimum θsmall according to the position of the upper side and the lower side of the substrate 320.

In addition, since the substrate 320 is inclined by a predetermined irradiation angle θ₁ to reach the surface of the substrate 320 when the ion beam 310 emitted and irradiated from the ion beam source 300 reaches the surface of the substrate 320, the ion beam source The distance between the 300 and the substrate 320 may vary from the maximum Lmax to the minimum Lmin depending on the positions of the upper side and the lower side of the substrate 320.

On the other hand, the reach distance of the ion beam 310 irradiated from the ion beam source 300 depends on the position of the upper side and the lower side of the substrate 320 so that the energy E difference of the ion beam received at the surface of the alignment layer is generated. The energy difference of the ion beam 310 becomes an element that changes the orientation characteristic.

At this time, the energy E is proportional to the number of ion beams 310 per unit area and the speed v of the ion beams 310. The ion beams 310 decrease in speed as they reach longer distances. Therefore, as the distance increases, the energy intensity of the ion beam 310 decreases.

In addition, since the irradiation angle of the ion beam 310 is directly related to the pretilt angle, the change of the irradiation angle according to the position of the substrate 320 becomes a big factor in changing the orientation characteristic.

Therefore, when the ion beam is inclined so as to incline the substrate so that the ion beam is irradiated onto the substrate with a predetermined irradiation angle in order to give a desired pretilt angle to the liquid crystal molecules, the irradiation direction and the energy vary depending on the position of the substrate, Where the distance is far, there is a problem that the alignment film is not formed uniformly because the probability of collision between particles increases and the linearity and energy are weakened to lower the alignment effect.

The present invention locates an integrated medium having a predetermined blocking portion and a passing portion between the ion beam source and the inclined substrate coated with the alignment layer so as to concentrate the ion beam drawn from the ion beam source. By varying the size of the passage to adjust the density of the medium to block the ion beam irradiated and diffused from the ion beam source so that the ion beam is irradiated with a uniform irradiation angle (direction) to the alignment film on the substrate, the integration medium It is an object of the present invention to provide an ion beam irradiation apparatus for forming an alignment layer having uniform alignment characteristics by adjusting the number of ion beams passing through to compensate for the energy difference according to the reach distance of the ion beam.

In addition, the present invention is the ion extracted from the ion beam source between the ion beam source and the inclined substrate coated with the alignment film so that the ion beam extracted from the ion beam source can be irradiated with uniform energy on the substrate coated with the alignment film Positioning the integrated medium having a predetermined blocking portion and a passing portion so as to concentrate the beam, and uniformly composed of a mesh structure that can adjust the density of the ion beam irradiated by the ion beam source according to the region Another object is to provide an ion beam irradiation apparatus for forming an alignment film having one orientation characteristic.

1 is a schematic cross-sectional view of a general liquid crystal display device.

2 shows a schematic configuration of an ion beam irradiation apparatus for forming a conventional alignment film.

3 is a view showing the relationship between the irradiation angle () and the pretilt angle of the ion beam in the conventional ion beam irradiation apparatus.

4 is a view conceptually showing a relationship between an irradiation direction of an ion beam and an ion beam arrival distance according to a position of a substrate in an ion beam irradiation apparatus for forming a conventional alignment film.

5 is a schematic view showing an ion beam irradiation apparatus for forming an alignment film as an embodiment according to the present invention.

6A and 6B are embodiments according to the present invention, conceptually illustrating an ion beam irradiation apparatus in which an integrated medium having a size of a blocking portion or a passing portion is positioned between an ion beam source and a substrate to have a uniform ion beam energy distribution. Showing as drawing.

FIG. 6C is a view conceptually showing an ion beam irradiation device configured to have a uniform ion beam energy distribution by configuring an ion beam source having a mesh structure as an embodiment according to the present invention; FIG.

<Description of Signs of Major Parts of Drawings>

400, 500: ion beam source 401: cathode

402: anode 403: plasma forming region

404: ion beam extraction medium 405: ion beam acceleration medium

406: ion beam extraction area 410, 510: ion beam

411: ion beam irradiation area 420, 520: substrate

421 holder 440 vacuum container

470, 570a, 570b, 570c: integrated media

471, 571a, 571b, 571c: blocking part

472, 572a, 572b, 572c: passing part

600: ion beam source with mesh structure

In order to achieve the above object, an ion beam irradiation apparatus for forming an alignment film according to the present invention comprises: a substrate disposed in a vacuum container; An ion beam source spaced apart from the substrate at regular intervals and inclined from the substrate; And an integrated medium positioned between the substrate and the ion beam source and configured to adjust the density of the ion beam transmitted according to the distance from the substrate.

The ion beam source is characterized in that it comprises a mesh structure that can adjust the number of ion beams irradiated according to the position.

The integrated medium is characterized in that the density of the ion beam is adjusted by adjusting the number of ion beams blocked according to the distance to the substrate.

The integrated medium is characterized in that the density of the ion beam is adjusted by adjusting the number of ion beams passed according to the distance to the substrate.

According to the invention, the ion beam source comprises: means for ionizing the injected gas into ions and electrons; Extracting means for extracting the ions in the form of a beam; And accelerated means for accelerating the extracted ion beam to reach the substrate.

The ion is characterized in that the argon (Ar) ions.

The blocking portion of the integrated medium is made of a medium for absorbing or reflecting the ion beam.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

5 is a schematic view showing an ion beam irradiation apparatus for forming an alignment layer as an embodiment according to the present invention.

The ion beam irradiation apparatus is largely divided into three regions, a region 403 in which injected gas is ionized into ions to form a plasma, and an ion beam extraction region in which the ions are extracted and accelerated through the beam. 406 and ion beam irradiation area 411 from where the accelerated ion beam 410 is emitted to the substrate 420.

In the region 403 forming the plasma, the injected gas is ionized with ions, and the ionized ions are extracted and accelerated in the ion beam extraction region and then irradiated to the substrate 420 in the vacuum ion beam irradiation region.

That is, the ion beam irradiation device is configured to irradiate the ion beam 410 to the substrate 420 fixed to the holder 421 in the vacuum container 440.

In this case, the ion beam irradiation apparatus includes an ion beam source 400 including a cathode 401 and an anode 402, an ion beam extracting medium 404, and an ion beam accelerating medium 405. And a vacuum vessel 440 allowing the ion beam 410 generated from the ion beam source 400 to be directed and irradiated to the substrate 420, between the ion beam source and the substrate in the vacuum vessel. An integrated medium 470 for blocking the diffused ion beam to concentrate the ion beam and adjusting the number of ion beams to pass through, and the substrate 420 in the vacuum vessel 440 may maintain a constant angle. It comprises a holder 421 to be fixed.

As a gas injected into the ion beam source 400 to generate the ion beam 410, it is preferable to use an inert gas such as argon (Ar), krypton (Kr), xenon (Xe), and the like. Use

Although not shown, a shutter may be provided between the ion beam source 400 and the substrate 420 to adjust the time for which the ion beam 410 is irradiated to the substrate 420.

The ion beam source 400 generates ions and supplies an ion beam 410, which ionizes the gas injected by the voltage difference between the cathode 401 and the anode 402 to generate a plasma including electrons and ions. In the generated plasma, ions pass through the passage of the ion beam extraction medium 404 by the extraction electrode and are extracted to the ion beam 410.

The ion beam 410 extracted from the discharged plasma is accelerated by the action of an electric field applied to the ion beam acceleration medium 405 and irradiated at a predetermined angle on the substrate 420.

At this time, the ion beam 410 is drawn in a direction perpendicular to the direction of the long axis of the extraction medium 404 and the acceleration medium 405 of the ion beam source 400 and the collision between the particles of the ion beam 410 As a result of the interaction and the longer the distance of the ion beam 410, the linearity and energy of the ion beam 410 is weakened, so that the phenomenon of diffusion toward the side such as the upper side and the lower side of the substrate 420 occurs. The diffused ion beam 410 is blocked by the integration medium 470 located between the ion beam source 400 and the substrate 420.

The integrated medium 470 forms a blocking portion 471 for blocking the ion beam 410 incident at a predetermined angle and a passage portion 472 for passing the ion beam 410 incident at a predetermined angle. The blocking unit 471 may be formed of a medium capable of absorbing the ion beam 410 or a medium capable of reflecting the ion beam 410.

At this time, the integrated medium 470 controls the number of ion beams 410 passing through the integrated medium 470 by adjusting the density of the medium by changing the sizes of the blocking part 471 and the passing part 472. To help.

Accordingly, the ion beam 410 extracted from the ion beam source 400 has a linearity to the substrate 420 in a uniform irradiation direction by blocking the ion beam 410 diffused while passing through the integration medium 470. In addition, the transmission medium of the ion beam 410 is adjusted by the integration medium 470 to have a uniform distribution of energy E of the ion beam 410 in front of the substrate 420.

As a result, the ion beam 410 drawn from the ion beam source 400 is irradiated to the alignment layer with uniform energy and irradiation direction by the integration medium 470 to form an alignment layer having uniform alignment characteristics.

6A and 6B are embodiments according to the present invention, conceptually illustrating an ion beam irradiation apparatus in which an integrated medium having a size of a blocking part or a passing part is positioned between an ion beam source and a substrate to have a uniform ion beam energy distribution. The figure shows.

First, the ion beam 510 is diffused by its characteristics, and blocks the integration media 570a and 570b with respect to the ion beam 510 that is irradiated and diffused beyond a certain angle while passing through the integration medium 570. It is selectively absorbed or reflected by the portions 571a and 571b, and the ion beam 510 passed in a direction substantially perpendicular to the long axis direction of the integrated medium 570a and 570b is the substrate in a uniform irradiation direction. 520 is irradiated.

As shown in FIG. 6A, the integrated medium 570a includes a blocking portion 571a and a passing portion 572a. The blocking portion 571a is changed in size to block the ion beam 510. The number of ion beams 510 passed in each unit area of the integrated medium 570a is varied by adjusting the number of the s, and the pass portions 572a are the same size.

In more detail, since the substrate 520 is inclined at an angle to form an alignment layer for obtaining pretilt, the distance between the integrated medium 570a and the substrate 520 is different depending on the upper and lower positions.

In this case, the size of the blocking portion 571a may be reduced in the integration medium 570a located at a position far from the substrate 520, and the blocking portion 571a may be formed in the integration medium 570a at a position close to the substrate 520. Increase the size of.

Then, in the integrated medium 570a far away from the substrate 520, the size of the blocking portion 571a is small, so that the number of ion beams 510 to be blocked is reduced, so that ions passing per unit area of the integrated medium 570a are reduced. The number of beams 510 is increased, and in the integrated medium 570a located near the substrate 520, the blocking part 571a is large, so that the number of ion beams 510 blocked is increased. The number of ion beams 510 passing per unit area of 570a is reduced.

At this time, the energy intensity of the ion beam 510 passing through the integration medium 570a to the substrate 520 is proportional to the number of ion beams 510 per unit area and the speed of the ion beam 510.

Accordingly, as the ion beam 510 reaches the substrate 520, the speed of the ion beam 510 decreases so that the energy intensity of the ion beam 510 decreases. Compensating the difference in the energy of the ion beam 510 according to the position of the substrate 520 by increasing the number of the ion beam 510 is irradiated through the integration medium 570a uniformly in front of the substrate 520 Have an energy distribution.

6B conceptually illustrates an ion beam irradiation apparatus in which an integrated medium 570b having a size of the pass portion 572b is positioned between the ion beam source 500 and the substrate 520 to have a uniform ion beam energy distribution. One example is shown.

The integrated medium 570b includes a blocking part 571b and a passing part 572b, and the passing part 572b adjusts the number of ion beams 510 that pass through the size of the blocking part 571b. The size of the portion 571b is the same.

In more detail, since the substrate 520 is inclined at an angle to form an alignment layer for obtaining pretilt, the distance between the integrated medium 570b and the substrate 520 is different depending on the upper and lower positions. In the integrated medium 570b located at a position far from the substrate 520, the passage portion 572b has a large size, and in the integrated medium 570b located at a position close to the substrate 520, the passage portion 572b has a small size. do.

Then, in the integrated medium 570b far from the substrate 520, the number of the ion beams 510 is increased due to the large size of the pass portion 572b, so that the pass per unit area of the integrated medium 570b is increased. The number of ion beams 510 is increased.

In addition, in the integrated medium 570b located close to the substrate 520, the number of the ion beams 510 is reduced because the pass portion 572b is small, and thus passes per unit area of the integrated medium 570b. The number of ion beams 510 is reduced.

At this time, the energy intensity of the ion beam 510 passing through the integration medium 570b to the substrate 520 is proportional to the number of ion beams 510 per unit area and the speed of the ion beam 510.

Therefore, the ion beam 510 passing through the integration medium 570b indicates that the speed of the ion beam 510 increases as the distance to the substrate 520 increases, so that the energy intensity of the ion beam 510 decreases. Compensating the difference in the ion beam energy according to the position of the substrate 520 by increasing the number of the ion beam 510 is irradiated through the integrated medium 570b to uniform energy distribution in front of the substrate 520 Have it.

FIG. 6C illustrates an embodiment according to the present invention, which includes a mesh structure capable of positioning an integrated medium between an ion beam source and a substrate and controlling a number of ion beams irradiated with the ion beam source. It is a diagram conceptually showing an ion beam irradiation apparatus having a beam energy distribution.

Referring to FIG. 6C, an integrated medium 570c having a blocking portion 571c having a uniform transmittance and a passing portion 572c according to the present invention is positioned between the ion beam source 600 and the substrate 520.

With respect to the ion beam 510 drawn from the ion beam source 600 at a predetermined irradiation angle, the ion beam 510 diffuses according to its characteristic as it moves away from the ion beam source 600. Since it is selectively blocked by), the linearity of the ion beam 510 irradiated to the substrate 520 is improved to allow the alignment layer to be uniformly formed.

At this time, the irradiation angle of the ion beam 510 is formed by inclining the substrate 520 on which the alignment layer is applied.

In addition, the ion beam source 600 is configured to control the intensity of the ion beam energy, including a mesh (mesh) structure that can adjust the number of ion beams 510 to be irradiated.

In the ion beam source 600 located far from the substrate 520, a large number of ion beams 510 are drawn out by the mesh structure, and the ion beam source 600 located close to the substrate 520. ), A small ion beam 510 is drawn out by the mesh structure, so that when the ion beam 510 passes through the integration medium 570c, the ion beam 510 passes through the integration medium 570c. The number of ion beams 510 passed through varies with distance to the substrate 520.

That is, the number of passages 572c of the integration medium 570c located at a distance from the substrate 520 is larger than that of the passages 572c of the integration medium 570c located at a distance from the substrate 520. The ion beam 510 is drawn out to irradiate the substrate 520.

Therefore, the ion beam 510 passing through the integrated medium 570c indicates that the velocity of the ion beam 510 decreases as the distance to the substrate 520 increases, so that the energy intensity of the ion beam 510 decreases. Compensating the difference in the ion beam energy according to the position of the substrate 520 by increasing the number of the ion beam 510 is irradiated through the integration medium 570c to uniform energy distribution in front of the substrate 520 Have it.

In summary, the ion beam 510 drawn from the ion beam source 500 reaches the substrate 520 with straightness in a uniform irradiation direction while passing through the integrated media 570a, 570b, and 570c. By varying the sizes of the blocking portions 571a, 571b, and 571c and the passing portions 572a, 572b, and 572c of the integrated media 570a, 570b, and 570c, the number of ion beams passing through the integrated media is controlled to adjust the number of ion beams. It has a uniform ion beam energy distribution.

Therefore, the ion beam drawn out from the ion beam source is irradiated onto the alignment layer with uniform energy and irradiation direction by the integrated medium according to the present invention to form an alignment layer having uniform alignment characteristics.

The embodiments described with reference to FIGS. 6A to 6C are not necessarily applied to each other, and the present invention is characterized in that the embodiments can be applied in parallel.

Although the present invention has been described in detail through specific examples, this is for explaining the present invention in detail, and the ion beam irradiation apparatus for forming the alignment layer according to the present invention is not limited thereto, and it is within the technical spirit of the present invention. It is apparent that modifications and improvements are possible by those skilled in the art.

In the ion beam irradiation apparatus for forming an alignment film, the ion beam is selectively irradiated by the integrated medium located between the ion beam source and the substrate with respect to the ion beam which is drawn out from the ion beam source and diffuses away from the ion beam source. Directly focusing the direction, forming an ion beam source having a mesh structure that can be drawn out by adjusting the size of the passage or blocking portion of the integrated medium or by controlling the number of ion beams so that the energy of the ion beam By having the same effect as in the above, there is an effect of improving the uniformity of the liquid crystal alignment.

Claims (7)

A substrate disposed in the vacuum container; An ion beam source disposed inclined with respect to the substrate at a predetermined distance from the substrate; And an integrated medium positioned between the substrate and the ion beam source and capable of adjusting the density of the ion beam transmitted according to the distance from the substrate. The method of claim 1, The ion beam source is an ion beam irradiation apparatus for forming an alignment layer, characterized in that it comprises a mesh structure that can adjust the density of the ion beam irradiated according to the position. The method of claim 1, The integrated medium is ion beam irradiation apparatus for forming an alignment layer, characterized in that for controlling the density of the ion beam by adjusting the number of the ion beam blocked according to the distance to the substrate. The method of claim 1, The integrated medium is ion beam irradiation apparatus for forming an alignment layer, characterized in that for controlling the density of the ion beam by adjusting the number of the ion beam passing in accordance with the distance to the substrate. The method of claim 1, The ion beam source is Means for ionizing the injected gas into ions and electrons; Extracting means for extracting the ions in the form of a beam; And an acceleration means for accelerating the drawn ion beam to reach the substrate. The method of claim 1, The ion beam irradiation device for forming an alignment layer, characterized in that the ions are argon (Ar) ions. The method of claim 1, The blocking portion of the integrated medium is an ion beam irradiation apparatus for forming an alignment layer, characterized in that the absorbing medium or a medium for reflecting the ion beam.