200917405 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種端部檢查裝置，用以檢查半導體晶 圓等被檢查體之端部。 【先前技術】 近年來，形成於半導體晶圓上之電路圖案的積體度逐 年升n，且生產過程之晶圓表面處理所使用之物質的種類 亦逐漸增加。隨此，在生產過程中觀察位在晶圓上所形成 之膜之邊界部分的晶圓端部附近亦變得重要。該端面附近 之缺陷管理會影響到從晶圓所形成之電路的良率。 因此，除了從複數個方向觀察半導體晶圓等之端部周 邊乂檢查半導體晶圓端部之狀態以夕卜’亦有將雷射光照 射於半^體晶圓之端部周邊，並分別接收在丰導體晶圓之 端：周邊反射時所產生之正反射光與散射反射光，根據該 等又光量來進行傷痕有無之檢測或表面粗糙度之計算等， 以檢4半導體晶圓端部之狀態（例如專利文獻υ。 專利文獻1 :曰本特開平丨丨_ 3 5丨85〇號公報 I货明内容】 ’ ^而由於半導體晶圓端部附近之狀態的檢查，係一 邊反覆被檢查體之旋轉及半導體晶圓端部之觀察T一邊擴 及+導體晶圓之全周來進行，由於係參照 之檢查所獲得之所右^ , 千等體曰曰圓 (所有衫像，來判斷半導體晶圓端部 200917405 陷，因此會有無法以良好效率進行半導體晶圓端部之檢查 的問題。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an end inspection apparatus for inspecting an end portion of an object to be inspected such as a semiconductor wafer. [Prior Art] In recent years, the degree of integration of circuit patterns formed on a semiconductor wafer has increased by n year by year, and the types of substances used for wafer surface treatment in the production process have gradually increased. Accordingly, it is also important to observe the vicinity of the wafer end portion of the boundary portion of the film formed on the wafer during the production process. The management of defects near the end face affects the yield of the circuit formed from the wafer. Therefore, in addition to observing the periphery of the end portion of the semiconductor wafer from a plurality of directions, the state of the end portion of the semiconductor wafer is inspected, and the laser light is irradiated to the periphery of the end portion of the semiconductor wafer, and is respectively received at The end of the abundance conductor wafer: the specular reflected light and the scattered reflected light generated during the peripheral reflection, and the detection of the presence or absence of the flaw or the calculation of the surface roughness according to the amount of the light, etc., to check the state of the end portion of the semiconductor wafer (For example, the patent document 专利 专利 特 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ The rotation and the observation of the end portion of the semiconductor wafer are performed by expanding the entire circumference of the +conductor wafer, and the right and the thousands of body circles obtained by the inspection are referred to (all the shirt images are used to judge the semiconductor). The wafer end portion 200917405 is trapped, so there is a problem that the end of the semiconductor wafer cannot be inspected with good efficiency.
本發明之目的在於趕供_ # Ati、. A 種敗*以良好效率檢查被檢查 體端部之狀悲的端部檢查裝置。 為了解決上述問題，本發明之端部檢查裝置，係一邊 使圓板形狀之被檢查體旋轉，-邊藉由取得該被檢查體之 端部的影像，以檢查被檢查體之端部附近的狀態者，其特 徵在於，具備：第】成像光學系統，設於被檢查體之上方； 第2成像光學系統，設於被檢查體之下方；以及攝影手段， 使用該第1成像光學系統或第2成像光學系統之至少其中 一者，以對該被檢查體之端部進行攝影。 …、備帛1 ‘照明手段，從該被檢查體之上方落 射照明該被檢查體；以及第2昭日主讯 ^ 弟2照明手段，從該被檢查體之 下方落射照明該被檢查體。 又，其具備：第1偏光構件，用以使該第J照明手段 之照明光偏光；以及第2偏光構件，用使該第2昭明手段 之照明光，往與該第！偏光構件之偏光方向大致正 向偏光。 /匕時’該第1偏光構件及第2偏光構件，除了分別使 該照明光偏光外，亦传你兮认士 Α 兀使従該被檢查體反射之反射光往與該 照明光之偏光方向相同方向偏光。 此外’其具備旋轉機構’係在維持偏光方向為大致正 交之狀態下，分別使該第1偏光構件及第2偏光構件旌棘 並至少將該第1偏光檨杜夕伯止 構件紋轉， 冓件之偏光方向，按照對該被檢查體 6 200917405 加工時所產生之削痕或膜邊界之形成方向來設定。 又’其具備控制手段，用以進行該第1照明手段、第2 照明手段之照明控制、哎哕錕 市j次肩攝影手段之攝影控制的至少一 種控制。 又’該攝影手段之該被檢查體的影像取得範圍，係設 定成該影像取得範圍之端緣中，與該被檢查體之徑方向之 中心側之料相反㈣端㈣與該·㈣之騎一致。 根據本發明，能以良好效率檢查被檢查體端部之狀態。 【實施方式】 圖！係表示本發明之端部檢查裝置1〇之構成的概略 圖。知部檢查裝置10，具備保持台n、旋轉驅動部η、及 水平驅動部i 3等。伴梏a # χ 保持口 11係用以吸附保持其上面所裝 載之半導體晶圓1 5。絲銼is知& 1也 方疋轉驅動部12係使保持台n旋轉既 疋角度。此外，既定角膚係3 月度係彳日例如在將以相鄰之檢查位置 所4又得之影像加以排列時 j f 了構成連續之影像的角度，該角 度係根據後述CCD3G，4G之影像取得範圍所設定。 水平驅動部"係使保持台u及旋轉驅動部Η沿水平 方向移動。此處，水平方南仫 f十万向係指相對於裝載保持台11之半 導體晶圓1 5之面呈水平之方6 .. 卞心万向。藉由設置該水平驅動部 3 ’在將半導體晶圓1 5裝φ於杈4* a 衮戟於保持台1 1時，可使導體晶 圓1 5之中心與保持台 心狀態。 之紅轉中心-致’亦即可修正偏 該端部檢查裝置10，具備用以取得半導體晶圓15之端 200917405 :上面之影像的第丨影像取得部21、及用以取得半導體晶 之端部下面之影像的第2影像取得部22。 第1影像取得部21，係設置於保持台u所吸附保持之 ¥體晶圓15的上方。該第1影像取得部2!，係由光源 〜透鏡26、半反射鏡27、成像透㈣、偏光板巧、及 cc⑽所構成。光源25係使用例如_素燈或LED等發出 無偏光之光的光源。從光源25所照射之光係、透過透鏡26 射入+反射鏡27’並在該半反射鏡27反射。該反射之光藉 由偏光:反29偏光之後’照明(落射照明)半導體晶圓b 卜被落射,¾明之该半導體晶圓i 5的上面端部，係藉 置於其上方之CCD3G來進行攝影。藉由該攝影而取得明= 野像。該第i影像取得部21具備以攝影光軸Ll為 使偏光板29旋轉之旋轉機構31。此外，光源25、 及旋轉機構3 1係藉由控制裝置45進行控制。 第2影像取得部22，係由光源35、透鏡％、 37、成像透鏡38、偏光板39及CCD4〇所構成。該与 像取彳于部22，係設置於保持台1丨所吸附保持之 y 15的下古 α«π 导體晶圓 下方，且设置成使CCD40之攝影光軸L2與第【办 取知部21之CCD3〇的攝影光軸以為 “象 T等體晶 之下面端部，係藉由設置於下方之CCD4〇來進行 ^ 第2影像取得部22，與該第！影像取得 。。亥 卜』樣地，係 備二攝影光軸L2…並使偏光板39旋轉之旋轉機播SUMMARY OF THE INVENTION The object of the present invention is to provide an end inspection device for inspecting the end of an object to be inspected with good efficiency by _#Ati, . In order to solve the above problem, the end portion inspection device of the present invention rotates the object to be inspected in a disk shape, and obtains an image of the end portion of the object to be inspected to inspect the vicinity of the end portion of the object to be inspected. The state of the invention includes: a first imaging optical system disposed above the inspection object; a second imaging optical system disposed below the inspection object; and a photographing means using the first imaging optical system or the first 2 at least one of the imaging optical system to photograph the end of the object to be inspected. ..., 帛1 ‘Illumination means, illuminating the object to be inspected from above the object to be inspected; and the second illumination means 2, the illumination means, illuminating the object to be inspected from below the object to be inspected. Further, the first polarizing member is configured to polarize the illumination light of the Jth illumination means, and the second polarizing member is directed to the illumination light of the second illumination means. The polarizing direction of the polarizing member is substantially positively polarized. In the case of the first polarizing member and the second polarizing member, in addition to polarizing the illumination light, the light reflected by the object to be inspected is reflected in the direction of polarization of the illumination light. Polarized in the same direction. In addition, in the state in which the rotation mechanism is maintained to be substantially orthogonal, the first polarizing member and the second polarizing member are respectively twisted and twisted, and at least the first polarizing element is formed. The direction of polarization of the element is set in accordance with the direction of formation of the cut or film boundary generated during processing of the test object 6 200917405. Further, it is provided with control means for performing at least one control of the illumination control of the first illumination means, the second illumination means, and the imaging control of the j-th shoulder photography means. Further, the image acquisition range of the object to be inspected is set to be opposite to the center side of the radial direction of the object to be inspected at the edge of the image acquisition range (four) end (four) and the (four) ride Consistent. According to the present invention, the state of the end portion of the test object can be inspected with good efficiency. [Embodiment] Figure! A schematic view showing the configuration of the end inspection device 1 of the present invention. The known part inspection device 10 includes a holding stage n, a rotation driving unit η, a horizontal driving unit i 3 and the like. The 梏 a # χ holding port 11 is used to adsorb and hold the semiconductor wafer 15 mounted thereon. The wire twisting drive unit 12 rotates the holding table n by the yaw angle. In addition, when the predetermined angular skin system is arranged on the next day, for example, when the images obtained by the adjacent inspection positions are arranged, jf forms an angle of a continuous image, which is obtained according to the image of CCD3G and 4G described later. Set. The horizontal drive unit moves the holding stage u and the rotary drive unit 水平 in the horizontal direction. Here, the horizontal square 仫 十 十 系 系 系 十 十 十 十 十 十 十 十 十 十 十 十 十 十 十 十 十 十 十 十 十 十 十 十 十 十 。 。 。 。 。 。 By providing the horizontal driving portion 3', when the semiconductor wafer 15 is mounted on φ4*a to the holding stage 11, the center of the conductor circle 15 and the state of the center can be maintained. The red-to-center-to-end can also correct the end inspection device 10, and has a second image acquisition unit 21 for acquiring the image of the upper end of the semiconductor wafer 15 200917405: and the end of the semiconductor crystal The second video acquisition unit 22 of the video below the portion. The first image acquisition unit 21 is provided above the body wafer 15 that is held by the holding stage u. The first image acquisition unit 2: is composed of a light source to a lens 26, a half mirror 27, an imaging transparent (four), a polarizing plate, and cc (10). The light source 25 is a light source that emits light without polarization, such as a lamp or an LED. The light system irradiated from the light source 25 is incident on the + mirror 27' through the lens 26, and is reflected by the half mirror 27. The reflected light is polarized by the reverse illumination: the illumination (emission illumination) semiconductor wafer b is epitaxially emitted, and the upper end portion of the semiconductor wafer i 5 is photographed by the CCD 3G placed above it. . Obtaining the clear = wild image by this photography. The i-th image acquisition unit 21 includes a rotation mechanism 31 that rotates the polarizing plate 29 with the imaging optical axis L1. Further, the light source 25 and the rotating mechanism 31 are controlled by the control device 45. The second image acquisition unit 22 is composed of a light source 35, lenses L, 37, an imaging lens 38, a polarizing plate 39, and a CCD 4. The image capturing unit 22 is disposed under the lower α_1π-conductor wafer of the y 15 adsorbed and held by the holding stage 1 and is disposed so that the photographic optical axis L2 of the CCD 40 is the same. The photographic optical axis of the CCD 3 部 of the portion 21 is such that the lower end portion of the body crystal such as T is generated by the second image acquisition unit 22 by the CCD 4 设置 provided below, and is acquired by the second image. In the sample plot, the second optical axis L2 is rotated and the polarizing plate 39 is rotated.
41此外，光源3 5、CCD40、及旋轉機構4 1传M 置45進行控制。 係楕由控制裝 200917405 =第1影像取得部21之旋轉機構3i 衫像取仵部22之旌艟撬碰，， ^ 1 轉，以改變透過偏光板 分別使偏光板29, 39旋 機構31 = ；^之照明光的偏光方向。此外，旋轉 師，由：： 可於偏光板29, 39之外周預先設置 二：任由：合於該齒輪之齒輪群與將驅動轴安裝於該齒輪 群之任一齒輪之馬達的組合所構成 j 於偏光板29,39、旋轉機構31 4 ::…女裝 由先斷續器等讀取編碼器，藉⑽ 之 稽此刀別官理該偏光板29, 39 要箱杰 。又’此夕卜’在將步進馬達使用於馬達時，只 要預先使其步進數斑偏氺把少始么 碼哭，h U先板之旋轉角度相對應，則不用編 Ί '、可以步進數來管理偏光板之旋轉角度。 圖2係表示半導體晶圓15之影像取得範圍（CCD 5 =影像取得範圍）。更詳言之，圖2⑷係半導體晶圓 〜俯，圖，K2(b)係圖2⑷中c—c’之截面圖。由於第工 '取付部21係設置於半導體晶圓15之上方，因此從上 =硯看半導體晶圓15時，第i影像取得部Η之影像取得 1巳圍（CCD3〇之攝影範圍），係半導體晶圓15之上面端部中 付匕50所示之範圍，亦即包含形成在半導體晶圓Μ之上 而。卩之傾斜面（以下，稱為上斜面、及連接於上斜面 &之平坦面1外之一部分的範圍。更詳言之，係設定成在 將影像之取得範圍5G與半導體晶圓15之上面分別投影 於與半導體晶® 15之平坦面15b平行之平面時，半導體晶 圓 15之法姑‘， 、、方向（圖2中左右方向）之兩端緣之中，斑丰霧 體曰圓 \ 曰曰 5之中心側之端緣相反側之端緣係與上斜面1 5a與 200917405 半導體晶圓15之周面π 4 、 七4八& ’稱為頂部）1 5 c的稜線5 1 —致， 或包含較稜線51外侧之區域。 致 由於第2影像取得部 轴L2盥笛】史你 P 22,如上述，係設置成其攝影光 2影像H 得部21之攝影^ Μ為_，因此第 二於二：2之影像取得範圍(CCD4°之攝影範圍)，係 導體晶® 15之平坦面15b平行之平面上時，盥 弟1影像取得部21之影像敗俨鈐阁上 、 y y像取侍範圍5〇相同。該CCD40之 衫像取得範圍係包含丰導p S m】c 匕3千導體晶0 15之下斜面15d、及 於下斜面15d之平；t曰而 十一面15e之一部分的範圍（圖2中符號 52) 〇 圖3係表示設於第丨影像取得部21之偏光板巧、及設 :第2影像取得部22之偏総39附近之概略的立體圖。 f於第1影像取得部21之偏光板29、及設於第2影像取得 〜一之偏光板39，係設置成使分別透過各偏光板後之光的 振巾田方向（偏光方向;)正交。例如通過偏光板29之光的振幅 方向為Y方向時，通過偏光板39之光的振幅方向則為X方 向。又，來自光源25之照明光通過偏光板29經直線偏光 之後，在半導體晶圓15之上面端部反射。該反射光即通過 偏光板29而到達CCD30。同樣地，來自光源乃之照明光 通過偏光板39經直線偏光之後，在半導體晶圓15之下面 端部反射。該反射光即通過偏光板39而到達CCD40。藉此， 由於透過各偏光板之照明光及反射光之偏光方向為同一方 向’因此來自正對之光源的照明光即使迂迴進入，亦可不 戈該迂迴進入之照明光的影響。該等偏光板29，39係一直 200917405 維持使透過各偏光板後之光的振幅方向正交的狀態，以z 方亦π攝影光轴L1、或攝影光轴L2)為軸，藉由旋 機構31，41各自旋轉。 轉 在上述之端部檢杳奘w 1做笪戒置10,丰導體晶圓15之檢杳 下述順序執行。首先，進行保持台U與半導體晶圓—心 位置調整’使檢查對象之半導體晶圓15之中心與保持台" 之旋轉中心-致後，使半導體晶κ 15吸附保持於保持台 ":使半導體晶圓15吸附保持之後，控制裝置45即分別 使光源25, 35點亮，以落射照明半導體晶圓15之上面端部 及下面端部。之後，控制裝置45控制CCD30, 4〇,以對半 導體晶圓15之上面端部、及半導體晶圓15之下面端部進 行攝影。 由於CCD40之影像取得範圍52，係設定成該影像取得 範画〜响緣中，在半導體晶圓丨5之徑方向上與半導體晶圓 1 5之中心侧之端緣相反側之端緣，係與下斜面1與頂部 15c之稜線51 一致，或包含較稜線51外側之區域，因此可 \ 同時對半導體晶圓丨5之端緣附近的兩面進行攝影。又，藉 由使透過偏光板29之照明光的振幅方向與透過偏光板39 之照明光的振幅方向正交，即可防止正對之照明光的照入 而防止光量不均之產生，而可防止將無缺陷之部位檢測為 缺陷’亦即可防止錯誤檢測。 又’由於係同時對半導體晶圓15之上面端部及下面端 部進行攝影’因此易於進行使藉由同一位置之攝影所獲得 之影像的相互對應。 200917405 對半導體晶圓i 5之上面端部及下面 後，控制裝置45卽、类 °進订攝影之 直45即透過紋轉驅動部12， 既定角度，以對半導俨曰^ 呆持口 Η旋轉 攝影。接著，在擴及主道脚曰 ~『及下面端部進行 之上面端全料行半導體晶圓15 面W及下面端部的攝影後，便結束丨 15之檢杳。介曰„ # 千導體日日圓 —'、Ρ，藉由同時對半導體晶圓15之上面娃# 下面端部進行攝影， 上面為部及 間。 ^ 了…導體晶圓15之端部的檢查時 該端部檢查裝置10，除了檢查有無薄膜 外’亦可檢測傷痕或笼 、'元入以 檢查薄…繞::方二剝離:缺陷之有無。例如， ，免的方法而$，可舉分別對半導體晶圓15 之上面端部與下面姓邱，隹/_ +葺的 券所Ρ 仃攝影’並將所攝影之影像與預 如之基本影像作比較。此外基本影 預先對無缺陷Μ體晶圓15進 ^例如 形成薄膜16之半導體曰圓…:：夺Κ象、或對尚未 千等體日日圓1 5進行攝影時之影像。 15::=:查於平坦面⑽形成薄膜16之半導體晶圓 / 、薄膜lG正常形成之情況下，基本影像之各像 取得之影像之各像素之像素值的差分為0,因此全像 素之像素值的差分為Q，而判斷為未產生薄膜b之繞入。 另”方面’如ϋ 4(a)或（b)所示，從平坦面m至下斜面⑸ 有溥膜16繞入時等，在產生薄膜16之下垂的情況下，由 於會與產生下垂之部位對應之像素之像素值產生差分，因 此以二方式在有像素值產生差分之區域的情況下，即判斷 為有溥膜16繞入。藉此’可檢測出薄膜16之下垂或繞入。 12 200917405 入 仕檢測出傷痕或薄膜16之剝離等缺 ==生缺陷之部分即會擴散之性質，二 件之各=無°然而’半導體晶圓15係依製造半導體元 在進面表面之狀態會惡化°為了將此去除’ 何體元件之各種製程之後，係藉由研磨 專來切削上斜面15a戋下斜面I5d夕本；C； ,次下斜面15d之表面，以使上斜面15a W 15d平坦。因此，於上斜Φ 15a或下斜面15d，沿 刀逾该等表面之方向會產生缺陷。配合膜邊界 研磨痕跡等構成缺陷產生之要因的製程，調整偏光板29,39 之明光的偏光方向，藉此適當檢查缺陷之有無。 如圖5所示’進行檢查前之製程沿半導體晶圓15之圓 周方向切削上斜面15a時，由於會沿上斜面…之圓周方向 形成削痕60,因此使第i影像取得部21之偏光板29旋轉， 以使透過偏光板29之光的振幅方向與削痕的延伸之方向 -致。如此，由於將透過偏光板29之光的振幅方向，配： 進打檢查前之製程切削上斜面15a之方向，藉此由於即使: 用經偏光之光來檢查半導體晶圓15之端”，亦可確保反 射缺陷部分之擴散光的光量’因此易於檢測出缺 分’且亦可確實特定缺陷產生之方向。 此外’透過偏光板29之光的振幅方向，進行檢查前之 製程未與切削上斜面15a之方向一致時，雖以該狀態 定缺陷部分，但由於不易缺陷之產生方向，因此在此奸 況下，即旋轉偏光板29使透過偏光板29之光的振幅方： 13 200917405 配合缺陷之種類與認為訊號會變大之方向一致。 又，在檢查半導體晶圓15之下面端部有無產生缺陷 時，亦可與檢查半導體晶圓15之上面端部有無產生缺陷時 同樣方式，旋轉偏光板39使偏光板39配合進行檢查前之 製程切削下斜面15d之方向。又，在其他之檢杳時:亦可 根據檢查内容來旋轉偏光板39,以配合膜之邊界的形成方 向。 此外’在進行檢查前之製程尚未切削上斜面⑸或下斜 面15d之情況下，亦可預先調整偏光板29, μ以使分別透 過偏光板29, 39之光的振幅方向成為預先決定之方向，在 觀察或對半導體晶圓15進行攝影之結果為無法特定有盎缺 陷時，亦可分料漸旋轉偏光板29, 39,以使透過偏光板 29、或偏光板39之光的振幅方向與產生之缺陷所延伸之方 向一致。 本實施形態，雖使料過偏織29, 39後之光以檢測 缺陷之有無’但未必-定要使照明光透過偏光板29 39。亦 即’本實施形態之第i影像取得部21、及第2影像取得部 22未必—定須具備偏光板29, 39。 。本實施形態’雖同時以第i影像取得部21對半導體晶 進行攝影、*以第2影像取得部22對半導體晶圓二 行衫，但無須限制於此。此等情況下，可在以第丨妒 :取得部21對半導體晶圓15之上面端部進行攝影之後衫 =弟2影像取得部22對半導體晶圓15之下面端部進行 衫。此時’控制裳置45係在以第工影像取得部Μ對半 14 200917405 導體晶圓！5之上面端部進 ;影像取得部2〗對半導體晶圓：夺之：亮如5’在以第 後，關閉光源25。之德，卢、 面端部進行攝影之 曰圓丨s夕丁 以第2影像取得部22 ff主it μ 日日圓15之下面端部進行攝影時，點于"2對+導體 藉由切換取得影像時所使用之光、 / 以此方式， 光源之照明光的照人。 H即可防止來自正對之 圓15之/外亦可僅在以第1影像取得部21對半導體曰 因匕之上面端部進行攝影時檢測出缺陷部分的情況^體日曰 灯以第2影像取得部2 進 摄旦,0士 士 V體日日® 15之下面端部進行 ^ r亦切換取得影像時所使用之_。以此 =從半導體晶圓15之上面端部檢測出缺陷部分時，對 15:二圓15之下面端部進行攝影，即可縮短半導體晶圓 之^的檢查時間，且易於特定缺陷部分。 ^實施形H ’雖將第lf彡像取得部21之影像取得範圍 5〇«又疋成在將影像取得範圍5〇與半導體晶圓15之上面分 別投影於與半導體晶圓15之平坦部15b平行之平面時，半 導體晶圓15之法線方向之兩端緣之中，與半導體晶圓15 之中心側之端緣相反側的端緣為與上斜面丨5a與頂部1 5c 之稜線51 —致，或包含較稜線51外側之區域，但無須限 制於此，亦可設定成與半導體晶圓1 5之中心侧之端緣相反 側的端緣為較上斜面1 5 a與頂部1 5 c之稜線5 1更靠半導體 晶圓1 5之中心側。 本實施形態，雖使用分別將CCD設置於半導體晶圓i 5 之上方、及下方’並分別使用各CCD以檢查半導體晶圓之 15 200917405 ^面端。卩及下面端部的端部檢查裝置作說明 制於此，使用1個CCD以檢查半導體晶圓之上面端= 下面端部的端部檢查裳置亦可。此時，預先將CCD保持於 對+導體晶K之上面端部進行攝㈣位置，僅缺 陷部分時，將ΓΓη α β ·ί 缺 丨刀字# CCD移動至對半導體晶圓之下面 影的位置，進行下面端部之檢查。 進仃攝 /本實施形態，雖藉由使用半反射鏡27, 37，以照明光與 系統與成像光學系統之-部分為共通光路，但並不限: 此’即使照明光學系統與成像光學系統係由各自獨立之光 路構成時’亦可實施本發明。此外，以下針對與本實施形 態相同之構成賦予相同符號作說明。 如圖6所示，將照明光學系統70與成像光學系統之成 像透鏡28設置成使彼此之光軸角度微幅錯開。此外，除了 將偏光板29設於成像透鏡28與半導體晶圓15之間以外， 將偏光板73設於照明光學系統7〇與半導體晶圓15之間， 亚透過各自之旋轉機構3 u 74調整，以使例如透過偏光板 73之光的偏光方向、與透過偏光板29之光的偏光方向為同 一方向。 以同樣方式，將照明光學系統71與成像光學系統之成 像透鏡38設置成使彼此之光軸角度微幅錯開。又，除了將 偏光板39設於成像透鏡38與半導體晶圓15之間以外，將 偏光板75設於照明光學系統7丨與半導體晶圓丨5之間，並 透過各自之旋轉機構41，76調整，以使例如透過偏光板75 之光的偏光方向、與透過偏光板39之光的偏光方向為同一 200917405 方向。此時’藉由將偏光板29之偏光方向與偏光板73之 偏光方向所構成之角度及偏光板39之偏光方向與偏光板75 之偏光方向所構成之角度’分別設定成小於偏光板73之偏 光方向與偏光板75之偏光方向所構成之角度，即可抑制因 CCD接收來自正對之光源之照明光所產生之影響。 本實施开y癌，雖為端部檢查裝置，但亦可將本發明之 端。卩檢查裝置之功能附加於用以檢查半導體晶圓等被檢查 體表面整體之檢查裝置。 【圖式簡單說明】 圖1係表示本發明之端部檢查裝置之構成的概略圖。 圖2(a) (b)係表示半導體晶圓之構成的說明圖。 圖3係表示偏光板及半導體晶圓附近的說明圖。 圖4(a)、（b)係表示對半導體晶圓之上面端 部進行攝影之影像的說明圖。 ^ 圖5係表不沿半導體晶圓之圓周方向切削半導體晶圓 上斜面時所產生之傷痕之一例的說明圖。 圖6係表示另—實施形態之端部檢查裝置之構成的概 略圖。 【主要元件符號說明】 1〇 端部檢查裝置 15 半導體晶圓 l5a 上斜面 17 200917405 15c 頂部 15d 下斜面 21 第1影像取得部 22 第2影像取得部 28, 38 成像透鏡 29, 39 偏光板 30, 40 CCD 45 控制裝置 50, 52 攝影範圍 51 棱線 18Further, the light source 35, the CCD 40, and the rotating mechanism 4 1 are controlled by M. The system is controlled by the control device 200917405 = the rotation of the rotation mechanism 3i of the first image acquisition unit 21, and the collision of the shirt image capturing unit 22, ^ 1 rotation, to change the polarizing plate 29, 39 rotation mechanism 31 through the polarizing plate respectively. ;^ The direction of polarization of the illumination light. Further, the rotator can be set as follows: It can be set in advance on the outer circumference of the polarizing plates 29, 39: a combination of a gear group of the gear and a motor for mounting the drive shaft to any of the gear trains. j The polarizing plate 29, 39, the rotating mechanism 3 4 ::... The women's reading device is read by the first interrupter, etc., and the polarizing plate 29, 39 is required by the knife. In addition, when using the stepping motor for the motor, as long as the stepping number of the stepping motor is pre-set, the starting point of the code is less, and the rotation angle of the h U first plate corresponds to the corresponding angle. The number of steps is used to manage the rotation angle of the polarizing plate. 2 shows an image acquisition range of the semiconductor wafer 15 (CCD 5 = image acquisition range). More specifically, Fig. 2(4) is a cross section of the semiconductor wafer, Fig., and K2(b), which is c-c' in Fig. 2(4). Since the work-receiving unit 21 is disposed above the semiconductor wafer 15, when the semiconductor wafer 15 is viewed from the top=砚, the image of the i-th image acquisition unit 取得 is acquired (the range of the CCD 3 摄影). The upper end portion of the semiconductor wafer 15 has a range indicated by 50, that is, formed over the semiconductor wafer. The inclined surface of the crucible (hereinafter referred to as the upper inclined surface, and a portion connected to the outer surface of the upper inclined surface & flat surface 1). More specifically, it is set to the image capturing range 5G and the semiconductor wafer 15 When the upper surface is projected on a plane parallel to the flat surface 15b of the semiconductor crystal 15 respectively, among the two edges of the semiconductor wafer 15 in the manner of ', ', and direction (the horizontal direction in FIG. 2), the spotted mist is rounded. The end edge of the opposite side of the center side of the 曰曰5 is the ridgeline 5 1 of the peripheral surface of the semiconductor wafer 15 π 4 , 七 4 8 & 'called the top 1 5 c ridge 5 1 Or, or include an area outside the ridgeline 51. As a result, the second image acquisition unit axis L2 flutes the tempo] history P 22, as described above, the photographic light 2 image H portion 21 is set to _, so the second to two: 2 image acquisition range (Photographing range of CCD 4°), when the flat surface 15b of the conductor crystal® 15 is parallel to the plane, the image of the image acquisition unit 21 of the younger brother 1 is defeated, and the yy image is the same as the range of 5 取. The CCD 40 shirt image acquisition range includes a range of abundance p S m]c 匕3 thousand conductor crystal 0 15 lower slope 15d and a lower slope 15d; t曰 and an eleven surface 15e (Fig. 2 (5) FIG. 3 is a schematic perspective view showing a polarizing plate provided in the second image capturing unit 21 and a vicinity of a side 39 of the second image acquiring unit 22. The polarizing plate 29 of the first image capturing unit 21 and the polarizing plate 39 provided for the second image capturing unit are arranged such that the direction of the vibrating field (polarizing direction) of the light transmitted through each of the polarizing plates is positive. cross. For example, when the amplitude direction of the light passing through the polarizing plate 29 is the Y direction, the amplitude direction of the light passing through the polarizing plate 39 is the X direction. Further, the illumination light from the light source 25 is linearly polarized by the polarizing plate 29, and then reflected at the upper end portion of the semiconductor wafer 15. This reflected light reaches the CCD 30 through the polarizing plate 29. Similarly, the illumination light from the light source is linearly polarized by the polarizing plate 39, and then reflected at the lower end portion of the semiconductor wafer 15. This reflected light reaches the CCD 40 through the polarizing plate 39. Thereby, since the polarization directions of the illumination light and the reflected light transmitted through the respective polarizing plates are in the same direction, the illumination light from the opposite light source can be prevented from entering the illumination light even if it is bypassed. The polarizing plates 29 and 39 are maintained in a state in which the amplitude directions of the lights transmitted through the polarizing plates are orthogonal to each other, and the z-axis is also the π-photographing optical axis L1 or the imaging optical axis L2). 31, 41 each rotates. In the above-mentioned end inspection, w 1 is used as the gate 10, and the inspection of the conductor wafer 15 is performed in the following order. First, the holding stage U and the semiconductor wafer-center position adjustment are performed so that the center of the semiconductor wafer 15 to be inspected and the center of rotation of the holding stage are controlled, and the semiconductor crystal κ 15 is adsorbed and held on the holding stage ": After the semiconductor wafer 15 is adsorbed and held, the control device 45 lights the light sources 25, 35, respectively, to illuminate the upper end portion and the lower end portion of the semiconductor wafer 15. Thereafter, the control unit 45 controls the CCDs 30, 4 to photograph the upper end portion of the semiconductor wafer 15 and the lower end portion of the semiconductor wafer 15. Since the image acquisition range 52 of the CCD 40 is set to the edge of the opposite side of the edge of the center side of the semiconductor wafer 15 in the radial direction of the semiconductor wafer 5 in the image acquisition pattern-to-sound edge. It conforms to the ridgeline 51 of the lower bevel 1 and the top 15c, or includes a region outside the ridgeline 51, so that both sides near the edge of the semiconductor wafer cassette 5 can be photographed at the same time. Further, by making the amplitude direction of the illumination light transmitted through the polarizing plate 29 orthogonal to the amplitude direction of the illumination light transmitted through the polarizing plate 39, it is possible to prevent the illumination of the correct illumination and prevent the occurrence of unevenness in the amount of light. Preventing the detection of defects-free parts as defects can also prevent false detection. Further, since the upper end portion and the lower end portion of the semiconductor wafer 15 are simultaneously photographed, it is easy to perform mutual correspondence of images obtained by photographing at the same position. 200917405 After the upper end and the lower end of the semiconductor wafer i 5, the control device 45卽, the straight-through photography 45 is transmitted through the grain drive unit 12, at a predetermined angle, to hold the semi-conducting 俨曰Rotate photography. Next, the inspection of the surface of the semiconductor wafer 15 and the lower end of the semiconductor wafer is performed on the upper end of the main track and the upper end, and the inspection of the 丨 15 is completed.曰 # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # The end inspection device 10 can detect flaws or cages in addition to the presence or absence of a film, and the 'input to check the thinness|winding:: square peeling: the presence or absence of defects. For example, the method of exemption is $, respectively The upper end of the semiconductor wafer 15 and the underlying surname Qiu, 隹 / _ + 券 Ρ 仃 仃 仃 仃 并将 并将 并将 并将 并将 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 。 。 。 。 。 。 。 。 。 。 。 。 。 The wafer 15 is formed, for example, by a semiconductor germanium forming a thin film 16::: an image obtained by photographing or photographing a Japanese yen 15 that has not yet been processed. 15::=: Looking at the flat surface (10) to form the film 16 When the semiconductor wafer/film 1G is normally formed, the difference between the pixel values of the pixels of the image obtained by the respective images of the basic image is 0, so the difference of the pixel values of the entire pixels is Q, and it is determined that the film b is not generated. Wrap around. Another "face" as shown in ϋ 4 (a) or (b), from the flat The surface m to the lower slope (5) when the diaphragm 16 is wound, etc., in the case where the film 16 is drooped, since the pixel value of the pixel corresponding to the portion where the sagging occurs is generated, the pixel value is generated in two ways. In the case of the difference region, it is determined that the ruthenium film 16 is wound. Thereby, the film 16 can be detected to droop or wrap. 12 200917405 The company detected the flaws such as scratches or peeling of the film 16 == The nature of the defects will spread, and the two pieces are different. However, the semiconductor wafer 15 is in the state of the semiconductor surface. After the various processes of removing the body components, the upper inclined surface 15a is cut by the grinding to cut the upper surface of the inclined surface I5d; C; the surface of the lower inclined surface 15d so that the upper inclined surface 15a W 15d flat. Therefore, in the upper oblique Φ 15a or the lower inclined surface 15d, defects are generated along the direction of the blade beyond the surfaces. The presence or absence of defects is appropriately checked by adjusting the polarization direction of the bright light of the polarizing plates 29 and 39 in accordance with the process of forming the defects such as the film boundary polishing marks. As shown in FIG. 5, when the process before the inspection is performed to cut the upper inclined surface 15a in the circumferential direction of the semiconductor wafer 15, since the sharp cut 60 is formed along the circumferential direction of the upper inclined surface, the polarizing plate of the i-th image obtaining portion 21 is made. 29 is rotated so that the direction of the amplitude of the light transmitted through the polarizing plate 29 and the direction in which the shaving extends. In this way, since the direction of the amplitude of the light transmitted through the polarizing plate 29 is matched with the direction before the inspection, the direction of the upper inclined surface 15a is cut, whereby even if: the end of the semiconductor wafer 15 is inspected by the polarized light, It is possible to ensure the amount of light of the diffused light in the portion where the defect is reflected, so that it is easy to detect the defect 'and the direction in which the specific defect is generated. Further, the direction of the amplitude of the light transmitted through the polarizing plate 29, the process before the inspection is not performed with the upper bevel 15a. When the directions are the same, the defect portion is determined in this state. However, since the direction in which the defect is not easily generated, the amplitude of the light transmitted through the polarizing plate 29 by the rotating polarizing plate 29 is considered to be 13:1717405 In the same manner as when the lower end portion of the semiconductor wafer 15 is inspected for damage, the polarizing plate 39 may be rotated in the same manner as when the upper end portion of the semiconductor wafer 15 is inspected for damage. The polarizing plate 39 is matched to perform the process before the inspection to cut the direction of the lower inclined surface 15d. In addition, during other inspections: the rotation may be rotated according to the inspection content. The plate 39 is formed to match the direction in which the boundary of the film is formed. Further, in the case where the process before the inspection has not cut the upper inclined surface (5) or the lower inclined surface 15d, the polarizing plate 29, μ may be adjusted in advance so as to pass through the polarizing plate 29, respectively. The amplitude direction of the light of 39 is a predetermined direction. When the semiconductor wafer 15 is observed or photographed as a result of the inability to specify an angstrom defect, the gradually rotating polarizing plates 29, 39 may be divided so as to pass through the polarizing plate 29. The direction of the amplitude of the light of the polarizing plate 39 coincides with the direction in which the generated defect extends. In the present embodiment, the light after the weave 29, 39 is used to detect the presence or absence of the defect, but it is not necessary to make the illumination light. It is not necessary to provide the polarizing plates 29 and 39 by the polarizing plate 29 39. That is, the i-th image acquiring unit 21 and the second image acquiring unit 22 of the present embodiment are required to obtain the i-th image at the same time. The portion 21 photographs the semiconductor crystal, and the second image capturing unit 22 applies the semiconductor wafer to the semiconductor wafer. However, the semiconductor wafer 15 is not limited thereto. In this case, the semiconductor wafer 15 can be obtained by the second acquisition unit 21 . Photography at the top end The back shirt = brother 2 image acquisition unit 22 applies a shirt to the lower end portion of the semiconductor wafer 15. At this time, the control skirt 45 is placed on the upper end of the conductor wafer! The image acquisition unit 2: for the semiconductor wafer: the light is as follows: 5' is turned on, and then the light source 25 is turned off. The German, Lu, and the end of the face are photographed and the image is obtained by the second image. When the lower end of the day 22 of the main unit μ of the Japanese yen is photographed, the light used when the image is acquired by switching the "2 pairs of + conductors, / in this way, the illumination of the light source is illuminated. It is possible to prevent the detection of a defective portion only when the upper end portion of the semiconductor element is photographed by the first image acquisition unit 21 from the front circle 15 or the second image. The acquisition unit 2 enters the camera, and the lower end of the 0 Shishi V body day® 15 is also used to switch the image used to obtain the image. When the defective portion is detected from the upper end portion of the semiconductor wafer 15, the lower end portion of the 15:second circle 15 is photographed, whereby the inspection time of the semiconductor wafer can be shortened, and the defective portion can be easily specified. The implementation pattern H' is formed by projecting the image acquisition range 5 of the first image acquisition unit 21 to the flat portion 15b of the semiconductor wafer 15 and the upper surface of the semiconductor wafer 15 respectively. In the parallel plane, the end edge on the opposite side of the edge from the center side of the semiconductor wafer 15 among the opposite ends of the semiconductor wafer 15 is the ridge line 51 of the upper slope 丨5a and the top 15c. Therefore, the region outside the ridge line 51 may be included, but it is not limited thereto, and the edge opposite to the edge on the center side of the semiconductor wafer 15 may be set to be an upper slope 1 5 a and a top 15 c The ridge line 5 1 is further on the center side of the semiconductor wafer 15. In the present embodiment, the CCDs are respectively disposed above and below the semiconductor wafer i 5 and each CCD is used to inspect the semiconductor wafers. The end inspection device of the cymbal and the lower end portion is described here, and one CCD is used to inspect the upper end of the semiconductor wafer = the end portion of the lower end portion to be examined. At this time, the CCD is held in advance at the upper end portion of the +conductor crystal K, and in the case of only the defective portion, the ΓΓη α β ·ί 丨 字 # # CCD is moved to the position below the semiconductor wafer. , check the bottom end. In the present embodiment, although the half mirrors 27 and 37 are used, the illumination light is shared with the portion of the system and the imaging optical system, but is not limited to this: even the illumination optical system and the imaging optical system The invention may also be practiced if it consists of separate optical paths. In the following, the same components as those in the embodiment will be denoted by the same reference numerals. As shown in Fig. 6, the illumination optical system 70 and the imaging lens 28 of the imaging optical system are disposed such that the optical axis angles of each other are slightly shifted. Further, in addition to the polarizing plate 29 being disposed between the imaging lens 28 and the semiconductor wafer 15, the polarizing plate 73 is disposed between the illumination optical system 7A and the semiconductor wafer 15, and is adjusted by the respective rotating mechanisms 3u 74. For example, the polarization direction of the light transmitted through the polarizing plate 73 and the polarization direction of the light transmitted through the polarizing plate 29 are the same direction. In the same manner, the illumination optical system 71 and the imaging lens 38 of the imaging optical system are disposed such that the optical axis angles of each other are slightly shifted. Further, in addition to the polarizing plate 39 being disposed between the imaging lens 38 and the semiconductor wafer 15, the polarizing plate 75 is disposed between the illumination optical system 7A and the semiconductor wafer cassette 5, and transmits through the respective rotating mechanisms 41, 76. The adjustment is such that, for example, the polarization direction of the light transmitted through the polarizing plate 75 and the polarization direction of the light transmitted through the polarizing plate 39 are in the same direction of 200917405. At this time, 'the angle formed by the polarizing direction of the polarizing plate 29 and the polarizing direction of the polarizing plate 73 and the polarizing direction of the polarizing plate 39 and the polarizing direction of the polarizing plate 75 are set to be smaller than that of the polarizing plate 73, respectively. The angle formed by the polarization direction and the polarization direction of the polarizing plate 75 can suppress the influence of the illumination light from the illuminating light source by the CCD. This embodiment is y cancer, although it is an end inspection device, but the end of the invention can also be used. The function of the 卩 inspection device is added to an inspection device for inspecting the entire surface of the object to be inspected such as a semiconductor wafer. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the configuration of an end portion inspection device according to the present invention. 2(a) and 2(b) are explanatory views showing the configuration of a semiconductor wafer. 3 is an explanatory view showing a vicinity of a polarizing plate and a semiconductor wafer. 4(a) and 4(b) are explanatory views showing images of the upper end portion of the semiconductor wafer. Fig. 5 is an explanatory view showing an example of a flaw which is generated when the upper surface of the semiconductor wafer is not cut in the circumferential direction of the semiconductor wafer. Fig. 6 is a schematic view showing the configuration of an end portion inspection device according to another embodiment. [Description of main component symbols] 1 〇 end inspection device 15 semiconductor wafer 15a upper ramp 17 200917405 15c top 15d lower slope 21 first image acquisition unit 22 second image acquisition unit 28, 38 imaging lens 29, 39 polarizing plate 30, 40 CCD 45 control unit 50, 52 shooting range 51 ridgeline 18