TW200917344A - Method of repairing circuit defect of LCD device and device thereof - Google Patents

Abstract

The objective of this invention is to carry out repair more cheaply and easily without reducing the aperture ratio of each pixel. According to the method of repairing a circuit defect of an LCD device and a device thereof of this invention, an aperture part is formed at a protective layer of a signal wire adjacent to a pixel electrode covering and producing the defected pixel, such that a part of the signal wire is exposed; conductive material is deposited on the aperture part and the area nearby, and the conductive material is electrically connected to the pixel electrode.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a repair method and apparatus for circuit defects of a circuit for a liquid crystal display device. Hall $成 【Prior Art】 As a liquid crystal display device, the company has more than 7 active matrix devices. It is mounted on a glass substrate of a circuit board of a liquid crystal display device, a liquid crystal display panel, and a circuit board for driving a pixel electrode on each of the stupid strips. The switching element of the body (TFT). As a repair technique of the above-mentioned circuit board, a plurality of switching elements are formed in each pixel electrode, and 70 pieces are replaced by durability, or are formed in advance to correspond to one image of a quail 7-1. When the switching element has a defect, the wiring portion to which the pixel electrode is connected to the switching element becomes a short-circuiting guide (Patent Documents i and 2). The purpose of these repair techniques is to predict that the substrate will be manufactured in the middle of the switch (4). I. As a repair technique, a hole is opened for protection at the place where the wire breakage occurs, and a conductive material is deposited by laser CVD or a bell (Patent Documents 3, 4, and 5). [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei No. Hei 9-152568 (Patent Document 3) Japanese Patent Laid-Open No. Hei 9-152568 (Patent Document 4) [Patent Document 5] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. It becomes lower, and the coupling potential generated by the circuit to be formed becomes the original aspect of noise mixing, etc., and in the repair techniques of Patent Documents 3, 4 and 5, it is necessary to perform laser CVD or sputtering. The repairs are made, so the cost becomes higher and the repair work takes time. [Summary of the Invention]

The circuit defect repairing method of the liquid crystal display device of the present invention includes the following method of protecting the signal line adjacent to the pixel electrode of the pixel generating the defect. a first step of forming an opening portion 'to expose a portion of the signal line; and a second step of depositing a conductive material in the opening portion and the vicinity thereof, and electrically connecting the deposited conductive material to the pixel electrode . The circuit defect repairing device of the liquid crystal display device of the present invention comprises the following device: an opening forming device for coherently protecting the pixel electrode of the pixel which generates the defect and the station & u, adjacent The protective layer of the signal line forms an opening so that one part of the signal line is a snow mountain soil. The road is connected to the short-circuit wiring forming device, and is used for the opening and the attachment, + community sound &; /, a conductive material is deposited nearby, and the conductive material is electrically connected to the pixel electrode. The ruthenium deposition/conductive material may be deposited as a conductive paste on the opening portion and its vicinity. The conductive paste may contain nano metal particles and a binder. 200917344 The second step may further comprise blowing the plasmad oxygen radicals onto the deposited conductive paste at atmospheric pressure. The second step may further comprise blowing the plasma-heated gas onto the deposited conductive paste under atmospheric pressure. The first step may also include irradiating the portion where the opening is to be formed by laser light, and removing a portion of the protective layer at the portion. The first step includes spraying a reducing gas at a portion where the opening portion is to be formed, and removing a portion of the protective layer at the portion. The short-circuit wiring forming device may include a deposition device for depositing a conductive paste containing nano-metal particles and a binder as the conductive material in the opening portion and the vicinity thereof. The short-circuit wiring forming device may further comprise a plasma generating device for injecting the plasmad oxygen radicals onto the deposited conductive paste at atmospheric pressure.

The short-circuit wiring forming device may further comprise a heating device for heating the deposited conductive paste, and the heating device may be a conductive paste for injecting the plasma (4) body to the deposited conductive paste at atmospheric pressure. The upper gas generating device can also be a laser light generating device for irradiating the laser light onto the deposited conductive paste. The mouth forming device may include a laser light emitting device that emits laser light that is removed from a portion of the opening portion. The opening portion forming device may also include a protective layer generating device for irradiating with laser light. . Instead of the above, the opening forming means may further comprise a plasma generating means for ejecting the portion of the protective layer from the portion of the opening portion to the portion of the protective layer. The defect repairing device of the present invention can further include support for defining the X-Y plane of the circuit board.

The mouth is in the configuration of the support A

A movable frame that can move along the X-axis direction D gate above the circuit board. In this case, the opening forming means and the short-circuit wiring forming means are in a state in which the material (4) above the circuit board is moved. Υ Υ 方向 ( ( ( ( :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: Forming an opening portion in a protective layer covering the ridge line adjacent to the pixel electrode, so that the portion of the signal line is deposited by blowing or coating the conductive material (4), and is rushed to A, * 丨久丹 for repair The conductive material is short-circuited with the pixel electrode, and therefore, the c-channels must be prepared on the circuit board in advance for the lengthy electric power to be repaired. x ’ repair work can be done in the atmosphere —/, ,’. As a result, it is easier and cheaper to repair than the prior art. A conductive paste containing a conductive material in between can be repaired at a lower cost and at a shorter time. X. Gan " Mildew Co., Ltd. acts as a conductive material in the vicinity of the thundering 铷4 containing the nano metal particle disk bonding agent; the right side is deposited in the open state in the atmosphere and can be more reliably attached to the protective layer. The opening and its vicinity. Then, turn on the conductive paste of the shovel, and the shovel to make oxygen radicals in the plasma state. In 200917344, the conductive paste will be exposed to the molecules of the oxygen radicals. The above oxygen radical molecules are molecules in the outer electrons having unpaired electrons, which are chemically reacted with the binder in the above conductive paste (usually available as a base material). By this chemical reaction, the hydrogen in the binder turns into water, and the carbon becomes carbon dioxide, which is evaporated and released into the atmosphere. Further, other elements contained in the binder are also vaporized and released into the atmosphere. The above chemical reaction removes the binder from the conductive paste, and the surface metal nano particles are directly contacted, and the particles are directly contacted between the particles and the electrode (signal line) material, and the metal is generated by the surface energy thereof. Bonding. Thereby, a short circuit between the connection signal line and the pixel electrode can be formed. Further, in addition to this, the conductive paste may be fired by a heating means such as laser light. In this case, the binder in the conductive paste is also removed by heating. [Embodiment] Referring to Fig. 1 and Fig. 2, the circuit board 10 to be repaired is an active matrix type liquid crystal display device in which a plurality of matrix-shaped pixels are respectively driven by switching elements. The circuit board 10 is formed on one surface of a transparent substrate 2 such as a glass substrate, and a plurality of gate electrodes 14 which are arranged at intervals in the γ direction and extend in the x direction, and are disposed on the signal line 12 and the gate electrode 14 A so-called TFT array substrate formed by a plurality of pixel electrodes 16 and a switching element 18 of a thin film transistor (TFT) provided in each pixel electrode 交叉 at the intersection of the intersection. In the example of the figure, the signal line 12 is formed directly on the surface of the transparent substrate 20 to form the pixel electrode 16 and the switching element 17 by the signal line 12 200917344 electrically insulating material "" On the protective layer 22 formed on the transparent substrate 20. It is shown that the protective layer 22 is formed by the 丨 丨 护 形成 形成 形成 覆盖 覆盖 覆盖 覆盖 覆盖 覆盖 覆盖 # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # Formed in the first protection ordering message 12 (4) Insulation of the second nozzle amine is born ^ ^ Your heart is protected by the vine membrane. Therefore, the gate line 14 is formed on the i-th 'on' pixel electrode 16 and switching The element 18 is formed on the second protective film. Each of the switching elements 18, in the illustrated example, is a source having a signal line U, a (10) connected to the corresponding pixel 16, and a source for controlling the source and the The field-effect transistor of the ehannei m4 is closed, and (4) the driver number of the corresponding pixel electrode 16 is output to the corresponding pixel electrode 16 through the conduction circuit 24. As long as it can be output to the pixel electrode 16, it can be a PNP type transistor, an NPN type transistor, or another type of semiconductor. #4 In the illustrated example, the pixel electrode 16 at the left end in FIG. The broken line 26 of 24 becomes a defect n. The present invention can also be applied to the corresponding: the switching element 18 of the pixel electrode 16 itself or The disconnection of the switching element 18 and the signal line 12 (not shown) of the signal line 12 or the interpolar line 14 may cause a defect. Hereinafter, the above-mentioned repair method will be described with reference to Fig. 2. Fig. 2 The longitudinal section of the vicinity of the repaired area shall be enlarged. The repaired area shall be in the state shown in Figure 2 before repair. 10 200917344 First, 'protective layer 22' covering the signal line 12 adjacent to the pixel electrode 16 of the pixel producing the defect The laser light is irradiated from the upper portion by the laser light generating device to protect the portion of the protective layer (especially the upper portion of the signal line 12 near the pixel electrode of the pixel in which the defect is generated). The layer material is removed by heating and evaporation, whereby an opening portion 28 in which one of the signal lines 12 is exposed upward is formed on the protective layer 22 as shown in Fig. 2B.

'f, V As the above-described laser generating device, a commercially available laser light generating device for generating a bundle of laser light can be used. Next, the conductive material 30 is sprayed to the opening portion 28 and its vicinity by the deposition device 'filled in the opening portion 28 by coating or the like, and the conductive material 3' is placed between the opening portion 28 and the pixel electrode 6 Above the protective layer 22, the conductive materials 3 are deposited in a continuous state. As shown in FIG. 2(C), the fruit is deposited in the vicinity of the inner opening portion 28 of the opening portion 28, and the signal line and the pixel electrode 16 of the defective pixel are electrically transmitted through the deposited conductive material 30. Sexual connection. As the above-mentioned deposition apparatus, a blowing device using a nozzle of a nozzle can be used, for example, by spraying a conductive paste of a spray type, and can be deposited by a Maskless Mes〇scale material of the US Opp=Meck Corporation (10). "This ialDep〇siti 〇n: M3D (trademark)) device 苐7.045.015, public interest, lack of work ^ ^ ..., as a deposition device, can also be used: i: his spray nozzle spray 奘 . s, private, usually Other devices such as paste coating devices. Conductive material 30, 椋A, ^ ^ ., .., ', 乍 is a conductive material containing nano-metal cypress: sub- 14 organic binder, the form of conductive paste, by the deposition device in the large 200917344 gas The state is deposited in the opening portion 28 and its vicinity. At this time, the conductive material 30 is contained in the conductive paste. Therefore, the plasma-derived oxygen radicals and the human conductive paste are then produced by a plasma-producing device. Thereby, the conductive paste is exposed to oxygen radical molecules. The oxygen radical molecules are chemically reacted with the unpaired electrons in the outer electrons and the above-mentioned conductive agent (usually available as a base material). By this chemical reaction, the ammonia in the bonded sword becomes water, and the carbon becomes carbon monoxide, which is evaporated and released into the atmosphere. Further, the other 7C contained in the binder is also vaporized and released into the atmosphere. - by removing the binder from the conductive paste by the above chemical reaction, the surface of the surface of the non-metallic particles of the moon is directly interspersed with the nanoparticles, and the signal lines 12 and The pixel electrodes 16 are in contact with each other 'metal bonding occurs by their surface energy. As a result, the metal bond between the contact metal particles can be prevented without using the physical overheating phenomenon of the heater or the laser light, whereby the connection signal line 12 and the pixel electrode can be formed as shown in FIG. 2(c). A strong short circuit of 16. As described above, in order to expose the binder contained in the conductive paste to the oxygen radical molecules, the oxygen radical molecules can be sprayed toward the predetermined portion of the circuit substrate 10 by the plasma generating device. The electric system generates a gas that generates a positive-charged electric particle in a state of I, and a radical molecule of an oxygen radical in the gas. The organic material of the predetermined portion can be exposed to the oxygen radical molecules or the gas thereof by causing the plasma gas generated from the electricity generating device to be ejected toward a predetermined portion of the circuit board 1 . 12 200917344 Commercially available atmospheric plasma generators are available as the above plasma generators. In such an atmospheric electric combustion generating device, since oxygen radical molecules can be generated at approximately atmospheric pressure·r, it is not necessary to have the substrate of the aforementioned predetermined portion.

In the vacuum state, the state can be substantially exposed to the atmosphere, and the predetermined substrate of the circuit substrate is irradiated with radical molecules. Therefore, it is not necessary to hold the circuit substrate of the object to be repaired in the vacuum chamber, so that the short circuit can be formed more easily and cheaply by using the atmospheric electricity generation device. Further, by lowering the temperature of the electric gas (for example, by cooling), the proportion of radical molecules in the plasma gas can be increased. By blowing the gas having a larger ratio of the radical molecules to the pattern portion, the organic material can be removed more effectively, so that the short circuit can be formed more efficiently. The nano metal particles are examples of particle diameters of several nanometers or even hundreds of nanometers, and π-electron metal fine particles such as gold, silver and copper. Since the surface energy of such metal microparticles is extremely high, metal bonds can be more reliably produced by removing only the binder. As the conductive paste containing such metal fine particles and a binder, for example, a product sold by Harima Chemicals (stock) can be used (trade name "Nano nano metal particles, preferably each particle is covered with a protective film" It is preferable that such a protective film can surely prevent an undesired metal=junction due to direct contact with the nano metal particles in an unreacted state with a radical molecule and can be rapidly irradiated by the radical molecule. It is possible to remove the metal bonds by direct contact between the nano metal particles. Hereinafter, an embodiment of the atmospheric plasma product 13 used in the defect processing described above will be described with reference to FIG. Fig. 3 is a schematic view showing a part of the atmospheric plasma generating apparatus 40. The atmospheric plasma generating apparatus 40 is provided with a derivative of glass, for example, a gas inlet port 42a at the upper end and a plasma injection port 42b at the lower end. The plasma spray nozzles 42 are disposed at intervals of d in the longitudinal direction of the spray nozzles 42 and respectively surround the spray nozzles 42 to arrange a pair of electrodes 44 for alternately between the two electrodes 44. A voltage or pulse voltage power supply device 46. The gas introduction port 42a of the injection nozzle 42 is selected from the gas source and the carrier gas Ca of the oxygen or air, and the carrier gas Ca such as nitrogen or argon, respectively, from the gas source and the inlet and outlet valves 52. The plasma injection port 4 of the injection nozzle 42 is directed toward the opening portion 28 and its vicinity. When the switching valve 52 is opened, the carrier gas ca from the carrier gas source 46 is "oxidized gas G of the self-oxidizing gas source 44". The plasma injection port 42b is guided through the sputum nozzle. The oxidizing gas Go is introduced between the nozzles 42 and the voltage from the carrier gas source 46 is applied between the electrodes 38 and 38 of the _ pair by the dielectric barrier. The resulting discharge inter-station area is formed as a region corresponding to the interval between the pair of electrodes 38, 38. Therefore, the oxidizing gas G directed from the gas introduction port 42a of the ejection nozzle 42 to the electrospray port 42b In the process of passing through the discharge region, it is in a plasma state. The oxidized gas G is used as an electrolysis source to eject the electric crack to the circuit substrate H, and the oxygen radicals and the organic binder in the conductive paste are combined. Chemical reaction occurs. The above results, organic The binder can be removed mainly by chemical reaction with oxygen radicals 14 200917344. The organic binder is removed from the conductive paste 'the conductive metal particles will contact each other. If this contact is made, by the surface energy of the metal particles, The nano metal particles are sintered to form a solid conductive circuit (that is, a short circuit) that short-circuits the pixel electrode 丨6. Hereinafter, the defect repairing device 6G is provided with a predetermined rectangular shape in one of the defect repairing devices 60 with reference to Figs. 4 to 6 . Then, the support table 64 of the γ-plane 62 type and the movable frame supported by the support table are provided. For each side of the support surface 62, for example, the pair of rails 68 and the second axis are spaced apart from each other. The γ # W is arranged in a state in which the σ χ axis direction extends in parallel.于 Υ Υ Φ u ^ 68, 68, with w ancient on the sides of the plane 62 track has a circuit board 10 with defects to be repaired. The movable frame 66 is disposed in the γ-axis direction so as to straddle the circuit board 1Q. The movable frame 66 is provided with a beam 邛 66a extending in the z-axis direction above the circuit substrate ig, and the beam portion 66

The two sides are integrally formed with one of the pair of legs 46b, 46 = corresponding to the cut portion 46b, and then engaged with the respective lane W 〇 and the corresponding obstruction 68, the movable frame 66 can be on the 62·Υ plane 62 Move along the x-axis. In the example of 6"Fig. "", the movable frame 66 must be self-propelled, corresponding to each track, and each of the hinges 7 is. in. In order to constitute this linear horse, an exciting coil (not shown) is mounted. Each = coil is received by accepting the supply of AC power. By means of the two electromagnetic inductions of the moving magnetic field, the corresponding current is generated on the corresponding track 6 8 , and the current is generated by the interaction between the induced current and the moving field of the excitation line of the phase of the magnetic corpse. Fingering + 70 produces propulsion along the road 68. Therefore, by controlling the exciting coils assembled to the respective folding members 7, the movable frame 66 can be moved in the X-axis direction and stopped at a desired position. The rails 66a of the movable frame 66 are provided with rails 72, 72 along one of the longitudinal directions (γ pumping directions). The bottom plate 74 of the linear motor, which is widely described in the two tracks 72, is supported by the function 苦, bitter ^ R _ + , and the two tracks 72. Thus, the bottom plate 74 is movable along the beam portion 6 in the γ-axis direction on the movable frame 66. The laser light generating device %, the deposition device π, the milk electricity generating device 40, and the microscope 8 are supported on the bottom plate 74. In order to make the laser light generating device deposition device 78, the atmospheric plasma generating device 4q, and the microscope (9) move in the direction of the x-axis (up and down direction), as shown in FIG. 6, the bottom plate 74 is fixed in parallel with each other. 4 tracks extending in the up and down direction. The laser light generating device 76, the deposition device 78, and the atmospheric electricity generation are provided as: 40 and an optical microscope, respectively, and commercially available devices can be used. The atmospheric plasma generating device 40 is particularly useful with the device shown in FIG. The laser light generating device 76, the deposition device 78, the atmospheric plasma generating device 4A, and the microscope 80' are fixed to the respective deflectors 84 of the respective lanes 82 corresponding thereto. Therefore, the laser light generating device 76 is in a state where the laser light emitting port is directed toward the circuit board 10, and the deposition device 78 is in a state in which the conductive paste is ejected toward the circuit board 1 to make the atmosphere electric. The slurry generating device 2 is in a state in which the rabbit I ejection opening 42b faces the circuit board 支持 on the support table 64, and 16 200917344 The microscope 80 is placed on the bottom plate 74 so that the objective lens faces the circuit board 1 分别. The corresponding baffle 84 on each of the rails 82 constitutes the same linear motor as described above. By controlling the power supply of the linear motor by @, the laser light generating device 76, the deposition device 78, the atmospheric electricity generating device 40, and the microscope 80 can be independently driven up and down, and can be maintained in the vertical direction. The desired lifting position.借此 Thereby, the interval between the plasma injection port 4 of the atmospheric plasma generating device 4 and the circuit substrate 1 of the workpiece can be adjusted, for example, to 丨. Again, Ray

The light generating means 76, the deposition means 78 and the microscope 8 () can also be adjusted to the same extent. When the circuit board 10 is placed on the support table 64iX_Y plane 62 and the circuit board 1 is removed from the XY plane 62, the laser light generation %, the deposition apparatus 78, the atmospheric electricity generation apparatus 4, and the like can be performed. The microscope rib is retracted to the top position to be avoided. Thereby, it is possible to avoid the trouble of the circuit board 1 ’, and the operation of arranging and detaching the circuit board 到 on the plane 62 can be quickly and easily performed. In the present embodiment, as shown in FIGS. 5 and 6, the upper portion of the bottom plate 74 is held to store the oxidizing gas and the carrier gas, respectively, and the oxidizing gas is supplied through the pipe 88 extending from the groove 86 to the injection nozzle 42. Carrier gas 曰. In the defect repairing device 60, by moving the movable frame "moving in the axial direction, the bottom plate 74 is moved in the γ-axis direction, so that the laser light generation %, the deposition salt 78, the atmospheric plasma generating device 4〇, and the microscope (9) respectively Move to the desired position of the circuit board 1. 17 200917344 Move the projection lens of the microscope 80 above the position (χ, y) of the defective pixel, so that the field of view image of the microscope 80 can be displayed on the appropriate display of the liquid crystal display device as needed. The device can observe the defective pixel of the circuit substrate 1 on the surface of the substrate. If the position of the defective pixel (χ, y) is to be repaired by the position of the microscope 80, the laser light generating device 76 is moved by the bottom plate 74. Instead of the microscope 80, the light projection lens is moved to the position of the defective pixel (X, above the illusion. First, the light projection lens of the laser light generating device 76 is moved above the position (X, y) of the defective pixel, as shown in the figure. The opening portion Μ is formed at 2, and the laser light is emitted from the laser light generating device 76 to irradiate the defective pixel corresponding to the circuit substrate. Next, the deposition device 78 is pasted. The ejection opening moves above the position (X, y) of the defective pixel to release the conductive paste from the deposition device 78 to the opening portion 28 and its vicinity to form a short circuit between the signal line 12 and the pixel electrode 16. A conductive paste containing metal particles as a conductive material is deposited on the vicinity of the mouth portion 28. 8. Then, the ejection opening 42b of the atmospheric plasma generating device 40 is moved above the position (X, y) of the defective pixel. Then, the switching valve 34 of the atmospheric electricity generation generating device 4 operates to supply the mixed gas of the carrier gas source 5 of FIG. 3 and the oxidizing gas G of the oxidizing gas source 40 to the nozzle 42. The supply of the mixed gas 'the relatively high-temperature electric coffee is sprayed from the nozzle 42 to the deposited metal particles, and the organic matter in the conductive paste is adhered and the binder is combined to make the metal*. 18 200917344 As the cooling cools down, the signal line 12 and the defective pixel 16 are reliably short-circuited by the more stable metal particles. The result of the pixel electrical on-the-spot repair operation for one defective pixel, as seen by moving Microscope 8〇 (Replacement of moving atmospheric plasma produces 襄: repairs are considerable (4) repairs. In the case of multiple defective pixels, the above-mentioned repair work must be performed on the defective pixels one by one. The oxygen radical molecular content in the plasma sprayed from the injection port (4) of the injection nozzle 42 of the oxidizing gas g.r. as the plasma source, and suppresses unnecessary temperature rise of the circuit substrate 10, and the self-injection nozzle 42. The injection σ is similar to the turbulence of the injected electric enthalpy as low as possible. By setting the temperature of the electric squish jet ejected from the ejection opening 42b to 2 〇 (rc, the milk radical molecule can be increased. The crucible is contained, whereby the organic binder of the binder portion can be effectively removed without causing overheating of the peripheral portion, so that the metal particles can be sintered by atmospheric spraying for about 30 seconds. The operating condition of the table generating device 40 is, for example, at least one of the rise time or the fall time of the voltage applied to the counter electrodes 44 and 44 from the power supply device is 100 Asec or less, and the repetition frequency of the waveform of the voltage v from the power supply device. Suitably selected in 〇_5~1〇〇〇kH, material applied to the pair of electrodes, the field intensity 44 may be appropriately selected in the range of billion 5~2〇〇kv S / cm. Further, it is preferable that the distance between the ejection opening 42b of the ejection nozzle 42 and the circuit board 1b is adjusted to a range of, for example, 1 to 20 mm. By using the above-described defect repairing device 60, the opening portion 28 can be formed first, and on the support table 64, metal fine particles of the repair material can be deposited on the repairing portion and burned. Also, the microscope 80 is not required. However, since the defective pixel and the state after repair can be observed on the support table 64, it is preferable to quickly perform the correct repair consideration </ RTI> to provide the microscope 80 on the movable frame 66. In the above embodiment, the linear motor is used as the driving mechanism for the movable frame 66 and the bottom plate 74, and various driving mechanisms may be used instead, or these may be manually operated. The formation of the η opening portion 28 may be replaced by the use of the atmospheric plasma generating device 4 or other atmospheric plasma generating device in addition to the laser light generating device 76, or may be applied to the circuit substrate from the atmospheric plasma generating device. The taste is sprayed out of the heating gas. Further, as the deposition device 78, in addition to the blowing device using the conductive paste, it is possible to use the atmospheric electricity (four) line to set 4G or the same other large

The dead power t generating means may also eject the heating gas from a predetermined place of the circuit board w from the atmospheric electricity generating means. In any of the above-described cases, a reducing gas source storing a reducing gas of carbon monoxide or nitrogen is used, and an atmospheric electricity generating device shown in FIG. 3 or another atmospheric electric generating device similar to the above is used to form the opening portion 28. A reducing gas from a reducing gas source, &amp; from the carrier gas source carrier gas, is supplied to the injection nozzle. In other words, the opening portion 28 is formed by subjecting the reducing gas to the chemical reaction of the electric layer 22 to remove the protective layer η (the same process as the so-called paste etching). However, it is preferable to suppress the temperature of the circuit board 1 to a minimum of 20 200917344, and it is preferable to use the laser light generating device 76 and the conductive paste blowing device. (Industrial Applicability) The present invention is not limited to the above-described embodiments, and it goes without saying that various changes can be made without departing from the scope of the application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a partially enlarged view showing an embodiment of a circuit board repaired by the present invention. Fig. 2 is an enlarged cross-sectional view taken along line 2_2 of the figure, showing an embodiment of the repair method of the present invention, (A) shows the state of the unrepaired, and (B) shows the state of forming the opening, (C) Indicates the status of the repair completed. Fig. 3 is a view schematically showing an embodiment of an atmospheric plasma generating apparatus. Fig. 4 is a perspective view showing an embodiment of the defect repairing device of the present invention. Figure 5 is a side elevational view of the defect repairing device of Figure 4. Fig. 6 is a perspective view showing an enlarged portion of the defect repairing device shown in Fig. 4; (Major component symbol description) 10 Circuit board 12 Signal line 14 Electrode 16 Pixel electrode 18 Switching element 20 Transparent substrate 22 Protective layer 21 200917344 24 Conductor circuit 26 Broken wire 28 Opening portion 30 Conductive material 40 Atmospheric plasma generating device 42 Jet Mouth 44 Electrode 46 Power supply unit 48 Oxidizing gas source 50 Carrier gas source F 52 Switching valve 60 Defect repairing device 62 XY plane 64 Support table 66 Moving frame 68 ' 72 Track 70 ' 84 Folding rotor 74 Base plate 76 Laser light generating device 78 Deposition Device 80 89 microscopic 22

Claims (1)

200917344 X. Shen patent paradigm: ... display - kind: the circuit defect repair method of the crystal display device, which is used to supplement the circuit defect of the device, and is characterized in that it comprises: protection of the pixel covering and generating the defect The layer forms an opening portion so that the signal line adjacent to the ":: element electrode; the portion of the exposed portion of the money; the conductive material is deposited in the opening portion and the vicinity thereof, and the deposited conductive material is deposited The second step of electrically connecting the pixel electrode to the pixel electrode. 2. In the circuit of the first item of the patent (4), the conductive material is used as a conductive paste method, and the electrical part of the second aspect of the patent application scope is Nearby. _ Circuit defect repair method, straight Φ The conductive paste contains nano metal particles and bonded together. ', 4. If you apply for the circuit defect repair method in the third section of the patent scope, the second step of the shoulder includes The operation of the conductive paste which is blown to the deposition at atmospheric pressure. &lt;Latex free radical spray 5. In the third item of the patent application, the circuit defect repair method is the second method. atmosphere The conductive paste will be sprayed to the deposition. 7 Heating gas 6 · As in the scope of the patent application, 兮篦 1 腓 腓 4 people w road defect repair method, its Ning "Hai 苐 1 ν Including the laser light to be irradiated to a part of the protective layer to be removed at the place. ~ Where the opening portion is, as in the scope of the patent application, the first step includes The reducing gas is sprayed on the repairing method, wherein the portion of the protective layer is removed from the opening portion of the opening portion of the opening portion 23 200917344 8. The circuit defect repairing device of the liquid crystal display device, A circuit defect for repairing a liquid crystal display device, comprising: an opening forming device for forming an opening portion of a protective layer covering a signal line adjacent to a pixel electrode that generates an image of the defect: a part of the S-hole line is exposed; the road wiring forms a farmer's body for sinking the material in the vicinity of the opening portion and electrically depositing the deposited conductive material with the pixel electrode Transporter. Repairing the defect circuit means 8, which comprises forming means for containing the conductive material and as a "formed between the metal particles and the binder of the conductive paste is deposited on the opening portion and its vicinity of the deposition apparatus. In the circuit defect repairing device of the ninth paragraph of the patent, the second == into the device further comprises a step of blowing the core of the core to the deposited conductive paste under atmospheric dust. The plasma generates the K-channel I: The circuit defect repair device of the second item of the second item range, the short heating device. The circuit defect repairing device of the eleventh force m of the invention, wherein the heating device comprises the electric device for injecting the gas in the Dazhihui to: the deposited conductive paste Poly: r: The circuit defect repairing device of the eleventh item of the heating, which is irradiated on the deposited conductive paste 24 200917344 laser light generating device. In the circuit of the eighth aspect of the patent application, the opening forming means includes the opening portion for illuminating the light to be formed by the light generating means. One of the D layers is a laser that has been removed. 15. In the eighth aspect of the patent application, the opening portion is formed by a device for repairing a circuit breaker for a person, which is blown to be m μ and ι3 for reducing the plasma. The gas nozzle person is at a place where the opening portion is to be formed to remove the plasma generating device. 1616. In the ninth application of the patent scope, the lightning step includes a defect repairing device for regulating the configuration of the circuit substrate and a support table disposed on the surface of the 拄 λΥ+, 'Q a movable frame above the circuit board, and the "/σ axis direction shifting the opening forming means and the short frame support can be made deeper into the device by the movable element to be moved over the circuit substrate First, the schema: as the next page 25