TW200915621A - Optoelectronic component comprising a layer stack - Google Patents

Optoelectronic component comprising a layer stack Download PDF

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Publication number
TW200915621A
TW200915621A TW97128257A TW97128257A TW200915621A TW 200915621 A TW200915621 A TW 200915621A TW 97128257 A TW97128257 A TW 97128257A TW 97128257 A TW97128257 A TW 97128257A TW 200915621 A TW200915621 A TW 200915621A
Authority
TW
Taiwan
Prior art keywords
layer
semiconductor
light
emitting diode
doped
Prior art date
Application number
TW97128257A
Other languages
English (en)
Chinese (zh)
Inventor
Magnus Ahlstedt
Stefan Bader
Johannes Baur
Matthias Sabathil
Martin Strabburg
Ulrich Zehnder
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200915621A publication Critical patent/TW200915621A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
TW97128257A 2007-07-30 2008-07-25 Optoelectronic component comprising a layer stack TW200915621A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE200710035687 DE102007035687A1 (de) 2007-07-30 2007-07-30 Optoelektronisches Bauelement mit einem Schichtenstapel

Publications (1)

Publication Number Publication Date
TW200915621A true TW200915621A (en) 2009-04-01

Family

ID=40175674

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97128257A TW200915621A (en) 2007-07-30 2008-07-25 Optoelectronic component comprising a layer stack

Country Status (3)

Country Link
DE (1) DE102007035687A1 (fr)
TW (1) TW200915621A (fr)
WO (1) WO2009015645A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008027045A1 (de) 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Halbleiterleuchtdiode und Verfahren zur Herstellung einer Halbleiterleuchtdiode
KR101064091B1 (ko) * 2009-02-23 2011-09-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102013104954A1 (de) 2013-05-14 2014-11-20 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102017002333A1 (de) * 2017-03-13 2018-09-13 Azur Space Solar Power Gmbh Leuchtdiode

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6728281B1 (en) * 2000-02-10 2004-04-27 The Board Of Trustees Of The Leland Stanford Junior University Quantum-dot photon turnstile device
TW493287B (en) * 2001-05-30 2002-07-01 Epistar Corp Light emitting diode structure with non-conductive substrate
US6515308B1 (en) * 2001-12-21 2003-02-04 Xerox Corporation Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
US20050173724A1 (en) * 2004-02-11 2005-08-11 Heng Liu Group III-nitride based LED having a transparent current spreading layer
DE102005016592A1 (de) * 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
US8115212B2 (en) * 2004-07-29 2012-02-14 Showa Denko K.K. Positive electrode for semiconductor light-emitting device
DE102004050891B4 (de) * 2004-10-19 2019-01-10 Lumileds Holding B.V. Lichtmittierende III-Nitrid-Halbleitervorrichtung
US20070108459A1 (en) * 2005-04-15 2007-05-17 Enfocus Engineering Corp Methods of Manufacturing Light Emitting Devices
KR100609117B1 (ko) * 2005-05-03 2006-08-08 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법
DE102005035722B9 (de) * 2005-07-29 2021-11-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
WO2007074969A1 (fr) * 2005-12-27 2007-07-05 Samsung Electronics Co., Ltd. Dispositif electroluminescent a base de nitrure de groupe iii
DE102006015788A1 (de) * 2006-01-27 2007-09-13 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP2008078297A (ja) * 2006-09-20 2008-04-03 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光素子

Also Published As

Publication number Publication date
DE102007035687A1 (de) 2009-02-05
WO2009015645A2 (fr) 2009-02-05
WO2009015645A3 (fr) 2009-04-23

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