200911434 九、發明說明： 【發明所屬之技術領域】 -中的彳丨1 ^係有關種於印刷基板與半導體晶#等加工件 中的J列如樹脂材或㈣材等材料進:牛 (markmg)等加工之雷射加工裝置。 研飞知-己 【先前技術】 #文獻1係揭示有—種為了提高加卫速“ f :+段將從雷射振盪器振盡出之直線偏光的加工用 运：光予以分光成第！及第2的兩加工用雷射光，且同時 =些兩加工用雷射光所形成的光束進行加工之雷射加工 裝置。 專利文獻1.日本特開2004_23〇466號公報 其說明） 汉 在專利文獻1所揭露之雷射加工裝置中，係在使用相 位板使經分光之P偏光的第j加工用雷射光的偏光方向旋 轉90度而成為s偏光、以及藉由副偏向電鏡㈣〇 而r〇r)使另- p偏光的第2加工用雷射光小角度偏向後， 使用將S偏光的第！加工用雷射光予以反射且讓p偏光的 第2加工用雷射光穿透之偏光分束鏡（polarizing beam flitter)而將第〗、第2加工用雷射光導向主偏向電鏡， 藉由該主偏向電鏡，使第卜第2加工用雷射光大角度偏 向，亚且決定加工件上的加工位置，進而藉由透鏡集 光以進行加工件的加工。 藉由上述的裝置構成，便能夠將雷射光同時照射於加 320062 5 200911434 工件上的兩個點，因 1個F β透鏡即可， 大型化。 此能夠提南加工速度，並且由於只需 因此能夠防止成本上升及加工裝置的 【發明内容】 (叙明所欲解決之課題） +在上述的雷射加工機裝置，係使用分光手段來將加工 用田射光刀光成直線偏光的第丄、第2加工用雷射光，且 以^偏向電鏡使利用偏光分束鏡而反射、穿透之第工加工 用雷射光、第2加工用雷射光定位於加工件上，因此，入 射於加工件的雷射光係成為直線偏光n由於直線偏 光係偏向偏光方向，因此在以印刷基板的銅箔貫穿加工為 含有金屬材料之材料的孔加工中，有例如欲加工成 …、.、圓（正圓）之加工孔卻形成為橢圓形之問題。 本發明係提案能夠改善上述問題之雷射加工裝置者。 (解決課題的手段） 本發月的田射加工裝置係具備：雷射振盪器，係輸出 :扁光的加工用雷射光；偏向鏡（心❿比⑽茁七沉），係 ::述加工用雷射光予以偏向；以及集光透鏡，係將被前 了么向鏡偏向之前述加工用雷射光予以集光在加工件上； :前述偏向鏡係入射有經前述直線偏光之前述加工用雷射 ^形成有將該經直線偏光之加玉时射 先之塗層。 (發明的效果） 依據本發明，於偏向鏡形成有將經直線偏光（linear 320062 6 200911434 P〇ladzati〇n)之加工用雷射光轉換為圓偏光（circu如 P〇lardzati〇n)之塗層，因此，能夠使入射於加工件之雷射 先為圓偏光，且對於以習知雷射加工裝置所產生之直線偏 光的雷射光無法獲得良好真圓度之以印刷基板的㈣貫通 加工為代表的孔加工，係可獲得能夠獲得真圓度高的加工 孔之效果。此外，不用追加特別的光學系統而能夠將直線 偏光的雷射光轉換為圓偏光的雷射光，因此，能夠防止裳 置的大型化與成本的上升。 【實施方式】 以下，針對本發明的雷射加工裝置的實施形態，參照 圖式進行說明。 、 實施形態1. 第1圖係顯示本發明實施形態丨的雷射加工裝置之整 體構成圖。本實施形態〗的雷射加工裝置係含有加工部 1 〇、加工用雷射光產生部20、加工用雷射光分光部3〇、以 及加工用雷射光統合部40。該雷射加工裝置係將加工用雷 射光L分光成第1、第2的2個加工用雷射光La、Lb，將 該些加工用雷射光La、Lb分別照射於加工件以進行加工。 加工部10係具有XY平台11，且於該XY平台Π上 固定有加工件12。χγ平台U係構成為能夠沿彼此正交的 X轴方向與γ軸方向移動。 加工用雷射光產生部20係含有雷射振盪器21、準直 透鏡（c〇mmate iens)22以及光圈手段23。雷射振盪器21 係沿光軸A產生加工用雷射光L。該加工用雷射光l係經 7 320062 200911434 "、，、P偏光的雷射光。準直透鏡22係以使加工用 田于光L通過之方式配置於光軸八上以調整加工用雷射光 L的發散角。光圈手段23係同樣地配置於光轴a上，且 =通過準直透鏡22的加工用雷射光l設^任意的光束點 _ sp〇t)|。該加工用雷射光l的點徑係與照射於加工 12上之加工用雷射光La、Lb的點徑相對應設定。 ^工用雷射光分光部30係含有分以段31、相位板 f 3 1传配1如贿)33、及副偏向手段％。分光手段 :配置於光軸A上，且將通過光圈手段23之加工用雷 射先L分光成第，加工用雷射光“、與第2加工用雷射光 。加工用雷射光La、Lb的強度比係設定為1:卜設定為 ^相等射光La係沿與光軸A—致的光轴… 舳⑴加工用雷射光U係沿正交於光軸人、光轴A1之光 軸A3射出。 70 =板32係配置於_A1上，且將經分光手段/ :之弟i加工用雷射光La亦即經直線偏光之p偏光 加工用雷射光La的偏光方向予以旋轉如度，且將 “加工用雷射光La轉換為經直線偏光之s偏光的雷射 光。轉向鏡33係配置於相對於光軸A!傾斜45度的角度 且將轉換成S偏光之第1加工用雷射光La往沿與 先軸A1正交之光軸A2之方向反射。 副偏向手段34係含有—對副偏向電鏡μ、％、以及 …、1對應的-對副偏向電鏡掃描 種。 —m、38。一對副偏向電鏡35、36係以其反射面將 320062 8 200911434 第2加工用雷射光τ 38以小角度進行偏 射，且藉由副偏向電鏡掃描器37、 ,向，而將加工用雷射光Lb在加工杜 上，以例如±1度的範圍之小角度進行偏向。第2力工件U 射先Lb的該小角度之 ；工用雷 宅米（m m)的間隔。 上係相虽於例如數 加工件U的X轴方向^電鏡^將加工用雷射光U沿 雷射光Lb沿加ml而副偏向電鏡36係將加工用 的Y袖方向偏向。 加工用雷射光u係自分光手段3 '的入射角入射於副危6带& 貝无以大致45度 度的入射角人射於副偏二射面，接著以大致45 描器37係驅動副偏向電鏡$二射面。副偏向電鏡掃 用雷射光心沿加工件12的乂軸^偏角度白勺範圍將加工 描器38係驅動副偏向電鏡％ 爲向。副偏向電鏡掃 用雷射* Lb沿加工件12 以小角度的範圍將加工200911434 IX. Description of the invention: [Technical field to which the invention belongs] - 彳丨 1 ^ is related to J-column such as resin material or (four) material in processing parts such as printed substrate and semiconductor crystal #: cattle (markmg ) Laser processing equipment such as processing. Research fly--[Previous technology] #Document 1 reveals that there is a kind of processing for the purpose of increasing the speed of the "f:+ segment of the linear polarized light that will be excited from the laser oscillator: the light is split into the first! And the second processing laser light for processing, and at the same time, the laser processing device for processing the light beam formed by the two laser beams for processing. Patent Document 1. Japanese Patent Laid-Open Publication No. 2004-23〇466. In the laser processing apparatus disclosed in the first aspect, the phase shifting direction of the j-th processing laser light of the split P-polarized light is rotated by 90 degrees to become s-polarized light, and by the sub-bias to the electron microscope (four). r) a polarizing beam splitter that transmits a second processing laser beam that reflects the S-polarized light and reflects the second processing laser light that is polarized by the S-polarized laser beam (polarizing beam flitter), the first and second processing laser light are directed to the main deflection electron microscope, and the main deflection electron beam is used to deflect the second processing laser light at a large angle, and the processing position on the workpiece is determined. And then by the lens to collect light Processing of the workpiece. With the above-described device configuration, it is possible to simultaneously irradiate the laser light to two points on the workpiece of 320062 5 200911434, which can be enlarged by one F β lens. In addition, it is only necessary to prevent the increase in cost and the content of the processing apparatus (reported to solve the problem). In the laser processing apparatus described above, the beam splitting means is used to straighten the processing light. The polarized light of the second and second processing lasers are positioned on the workpiece by the polarized light beam and the laser beam for the processing and the second processing laser that is reflected and penetrated by the polarizing beam splitter. The laser light incident on the workpiece is linearly polarized. Since the linear polarization is biased toward the polarization direction, the hole is processed into a material containing a metal material by copper foil of the printed substrate, for example, to be processed into... The processing hole of a circle (a perfect circle) is formed into an elliptical shape. The present invention proposes a laser processing apparatus capable of improving the above problems. The field processing equipment of the month includes: a laser oscillator, which outputs: laser light for processing of flat light; a deflection mirror (heart-to-heart ratio (10) 茁 seven sinks), which is: a deflection of the processing laser light; The optical lens collects the processing laser light that has been deflected toward the mirror by the front surface of the processing lens; the polarizing lens is formed by the processing laser beam having the linearly polarized light incident thereon; According to the invention, the processing laser light for linear polarization (linear 320062 6 200911434 P〇ladzati〇n) is converted into circularly polarized light (according to the invention). The coating of circu such as P〇lardzati〇n) enables the laser incident on the workpiece to be circularly polarized first, and the laser light that is linearly polarized by the conventional laser processing apparatus cannot obtain a good true circle. In the case of the hole processing represented by the (four) through processing of the printed substrate, the effect of obtaining a machined hole having a high degree of roundness can be obtained. Further, since it is possible to convert linearly polarized laser light into circularly polarized laser light without adding a special optical system, it is possible to prevent an increase in size and cost. [Embodiment] Hereinafter, an embodiment of a laser processing apparatus according to the present invention will be described with reference to the drawings. Embodiment 1. Fig. 1 is a view showing the entire configuration of a laser processing apparatus according to an embodiment of the present invention. The laser processing apparatus according to the present embodiment includes a processing unit 1A, a processing laser light generating unit 20, a processing laser beam splitting unit 3, and a processing laser light combining unit 40. In the laser processing apparatus, the processing laser beam L is split into the first and second processing laser beams La and Lb, and the processing laser beams La and Lb are respectively irradiated onto the workpiece for processing. The processing unit 10 has an XY stage 11, and a workpiece 12 is fixed to the XY stage. The χγ platform U is configured to be movable in the X-axis direction and the γ-axis direction orthogonal to each other. The processing laser light generating unit 20 includes a laser oscillator 21, a collimator lens 22, and a diaphragm means 23. The laser oscillator 21 generates processing laser light L along the optical axis A. The laser light for processing is a laser light that is polarized by 7 320062 200911434 ",,, P. The collimator lens 22 is disposed on the optical axis 8 so that the processing field passes through the light L to adjust the divergence angle of the processing laser light L. The aperture means 23 is similarly disposed on the optical axis a, and = the beam point _ sp〇t)| is set by the processing laser light 1 of the collimator lens 22. The spot diameter of the processing laser light 1 is set corresponding to the spot diameter of the processing laser light La, Lb irradiated on the process 12. The working laser beam splitting section 30 includes a segment 31, a phase plate f 3 1 to transfer 1 such as a bribe 33, and a sub-bias means %. The light splitting means is disposed on the optical axis A, and the laser beam for processing by the aperture means 23 is first split into L, the laser light for processing ", and the laser light for the second processing. The intensity of the laser light for processing La, Lb. The ratio is set to 1: Bu is set to equal light, La is along the optical axis corresponding to the optical axis A. 舳 (1) The processing laser light U is emitted along the optical axis A3 orthogonal to the optical axis and the optical axis A1. 70 = plate 32 is arranged on _A1, and the polarization direction of the laser beam La, which is processed by the spectroscopic means, is also rotated by the linear direction of the polarized light of the p-polarized laser light, and will be " The processing laser light La is converted into laser light that is linearly polarized s polarized light. The turning mirror 33 is disposed at an angle inclined by 45 degrees with respect to the optical axis A!, and reflects the first processing laser light La converted into S-polarized light in a direction along the optical axis A2 orthogonal to the preceding axis A1. The sub-bias means 34 includes - a pair of sub-bias SEM scans corresponding to the sub-bias electron micrographs μ, %, and ..., 1. —m, 38. The pair of sub-biasing electron microscopes 35 and 36 deflects the second processing laser light τ 38 at 320062 8 200911434 by a small angle, and the processing beam is processed by the sub-biasing electron microscope scanner 37. The illuminating light Lb is deflected on the processing ridge at a small angle of, for example, a range of ±1 degree. The second force workpiece U strikes the small angle of the first Lb; the interval of the work mine meter (m m). For example, in the X-axis direction of the workpiece U, the processing laser light U is applied to the laser beam Lb along the laser beam Lb, and the sub-bias is biased toward the electron mirror 36 to deflect the Y-sleeve direction for processing. The processing laser light u is incident on the sub-risk 6′ with the incident angle of the self-dispersing means 3′. The incident angle of the convexity is not 45 degrees, and the incident angle is incident on the sub-biased surface, and then driven by the substantially 45-gauge 37 system. The secondary deflection electron microscope $ two faces. The sub-bias SEM sweeps the laser optical center along the 乂 axis angle of the workpiece 12 to drive the splicer 38 to drive the sub-bias to the electron mirror %. Sub-bias SEM sweep Laser* Lb will be processed along the workpiece 12 at a small angle
Lb係在以一對副偏 ' 向偏向。加工用雷射光 自副偏向電鏡36沿光路if :而::小角度的偏向後’ 加工=二軸以小角度的範圍進行變化。 力用#射先統合部4Θ係含有偏 向手段42、以及集光透鏡”，且將鏡4卜主偏 射光La、Lb予以統合再照射至加工件12、广2二：雷 41係設置於光軸A2與光路A4的 上。偏先为束鏡 鏡41係有第i加工用雷射光又:。於該偏光分束 第2加工用雷射光Lb自副偏 =:33入射，及有 电兄36八射。該偏光分束 320062 9 200911434 將第1加工用雷射光“往與光軸A2正交之光細 二:射，並且使第2加工用雷射光Lb順4: 的延長方向通過’結果，皆將該些加工用雷射光“路 平行'主偏向手段42射出。光路Μ係成為與光軸Μ二 係含有—對主偏向電鏡43、4“以及 ， 于乂各自的反射面將第1、笙1丄 1 一反射’以大角度分別將第=乐2:工用雷射光 ^予以偏向，而將第卜第加丄用雷射光La、 工件12上、" 弟加工用雷射光La、Lb在加 幵丨2上，以例如±1〇度 牡刀口 主偏向電鏡43係將各加工用雷：：角度進行偏向。 工件11的Y軸方向偏向， :、：：角度沿加 雷射光La、Lb以大角 '鏡44係將各加工用 第】、第2加工用的X轴方向偏向。 首先以大致45产 & 1)係自偏光分束鏡41 面，接著以大致^度的入角射入/於主偏向電鏡43的反射 射面。主偏向電鏡掃描器45 主偏向電鏡44的反The Lb is biased in a pair of sub-bias. Laser light for processing Self-biasing electron microscope 36 along the optical path if: and :: small angle of backwards processing = two axes are changed in a small angle range. The use of the #射先统部4Θ system includes a biasing means 42 and a collecting lens", and the mirror 4 main polarized light La, Lb is integrated and irradiated to the workpiece 12, wide 2: Ray 41 is set in the light The axis A2 and the optical path A4 are first. The beam mirror 41 is first provided with the ith processing laser light: and the second polarization beam Lb for the polarization beam splitting is incident from the sub-bias = 33, and the electric brother is 36. The polarized beam splitting 320062 9 200911434 "The light for the first processing laser is "finely directed to the optical axis A2: the light is emitted, and the second processing laser light Lb is passed in the direction of extension 4:" As a result, the processing laser light "path parallel" main deflection means 42 is emitted. The optical path system is included with the optical axis, and the main deflection electron mirrors 43, 4" and 1, 笙1丄1 a reflection 'at a large angle, the first = Le 2: the work laser light ^ is biased, and the Dibdi is used for the laser light La, the workpiece 12, " processing laser light La and Lb are twisted on the twisting 2, for example, by ±1 牡 牡 主 主 主 主 主 主 主 。 。 。 。 。 。 : : : : : : : : : : : : : The Y-axis direction of the workpiece 11 is deflected, and the angle of the ::: angle is increased by the laser beam La and Lb at a large angle 'mirror 44' for the X-axis direction for each processing and the second processing. First, the surface of the polarizing beam splitter 41 is applied at approximately 45 & 1), and then incident on the reflecting surface of the main deflecting electron microscope 43 at an entrance angle of approximately ^ degrees. The main deflection electron microscope scanner 45 is mainly biased toward the inverse of the electron microscope 44
大角度的範圍將各加工用·射光動主偏向電鏡43，且以 轴方向偏向。主偏向電鏡二:;L b沿加工件】2的Y 且以大角度的範圍將各加工用；射m偏向電鏡44， 的X軸方向偏向。 用田射先La、Lb沿加工件12 第1、第2加工用雷私 且自該集光透鏡47照射於加通過集光透鏡❿ 件12。加工用雷射光La係 320062 30 200911434 Γ著=垂直於加工件12之光路-而照射於加工件12。 加工用苗射光Lb係從大致與光 射於加工们…A6、A7的光轴係；而照 44的偏向而變化。隼光透於47 /係猎由主偏向電鏡43、 雷射光La、Lb匕產= 透射鏡尤㈣透鏡，且使各加工用 加工用雷射光集光於加…上。各 木光透鏡47同時，昭射於力 杜 12，且同時對加工件12進行加工。 、、 件 戶之：二加而::雷射光L &係未接受副偏向手段3 4的小角 ==，：僅接受主偏向手段42的大角 於加工件12上。第2加 口丹…射 卿角度之偏向、…係接糊向手段 照射至於工件12上。換;的大角度之偏向再 第1加工用雷射光u多^古加工用雷射光❹係比 偏向，結果.，第 夕：仃有副偏向手段34的小角度之 雷射光U再偏：：雷射㈣係在距離第1加工用 且根二==後之位置照射於加…上， 例如數毫米之位僅:離第1加工用雷射光^In the range of the large angle, each of the processing and the illuminating mains is deflected toward the electron microscope 43, and is deflected in the axial direction. The main deflection electron microscope 2:; L b is along the processing member 2 Y and is used for processing for a large angle range; the projection m is biased toward the electron mirror 44, and the X-axis direction is biased. The first and second processing lands of the workpiece 12 are irradiated with the first and second processing lands, and the illuminating lens unit 12 is irradiated from the concentrating lens unit 12. The laser light for processing La is 320062 30 200911434 illuminating the workpiece 12 while being perpendicular to the optical path of the workpiece 12. The processing shot Lb is changed from the optical axis of the processing to the processing of A6 and A7, and the deflection of the illumination 44. The light is transmitted through the main deflection electron microscope 43, the laser light La, Lb, the transmission lens, and the laser beam for processing. At the same time, each of the woodlight lenses 47 is incident on the force member 12, and at the same time, the workpiece 12 is processed. And, the user: two plus:: laser light L & is not accepting the sub-bias means 3 4 small angle ==,: only accept the main deflection means 42 of the large angle on the workpiece 12. The second addition of the dan... shooting the angle of the eccentricity, ... is the means of the paste to the workpiece 12. For the first time, the laser light of the first processing laser is more than the first laser beam for the processing of the laser. The laser (4) is irradiated on the plus position at a position away from the first processing and after the root===, for example, a few millimeters only: from the first processing laser light ^
12進行加工。第丨/、工用田射光La同時對加工件 相鄰接的兩加工孔同工用雷射光以心係例如對 此處’主偏向雷私L 雷射光轉換為圓：糸於其反射面具有將直線偏光的 (，仏。於：：：之具有圓偏光鏡特性的塗層 光成s偏光的加：用：：電鏡44係一起入射有經直線偏 加工用雷射％ u，用㈢射光以與經直線偏光成P偏光的 ，且以其反射面予以反射。主偏向電鏡 320062 11 200911434 44的塗層44a係將該些直線偏光的加工用雷射光、Lb 皆轉換為圓偏光。12 processing. Dijon/, work field light La simultaneously for the processing of the two adjacent processing holes of the working beam with the laser light to the heart system, for example, here the main deflection of the private light L laser light into a circle: 其 on its reflective surface The linearly polarized (, 仏.::: coating with a circular polarizer characteristic is added to the s-polarized light: with:: an electron microscope 44 is incident with a linear partial processing laser % u, with (3) light The polarized light is polarized by the linearly polarized light and reflected by the reflecting surface. The coating 44a of the main deflection electron microscope 320062 11 200911434 44 converts the linearly polarized processing laser light and Lb into circularly polarized light.
C . 塗層44a係以例如使用ZnS與ThF4之8層介電質多 層膜來構成。具體而言，該由ZnS與叫所構成之8層 介電質多層膜的塗層係由以下8層所構成：第1層，係與 空氣接觸，由ZnS所構成，厚度G.95±Q ^m;第2層'、 2邱所構成，厚度1,57土〇.1/Zm ;第3層，係由ZnS ，厂成’厚度UO士第4層，係由ThF4所構成， '厚度第5層，係由ZnS所構成，厚度143 + 第第6層，係由啊所構成’厚度1綱.Um; 係由Zns所構成’厚度1綱」以及第8 咖4所構成，厚度154±〇1_。且由該些第工 係期：=之塗層叫係積層於酬層之上。第8層 展'妾觸鏡材枓層’於其上依序積層第7至第 層係與空氣接觸，加工用雷射# τ 弟1 (，射角入射於該第丨層:::先“係一度的C. The coating layer 44a is formed by, for example, an 8-layer dielectric multilayer film using ZnS and ThF4. Specifically, the coating layer of the 8-layer dielectric multilayer film composed of ZnS and the so-called dielectric layer is composed of the following eight layers: the first layer is in contact with air and is composed of ZnS, and has a thickness of G.95±Q. ^m; the second layer ', 2 Qiu, thickness 1,57 soil. 1 / Zm; the third layer, is made of ZnS, the factory into the thickness UO, the fourth layer, is composed of ThF4, 'thickness The fifth layer is composed of ZnS, and has a thickness of 143 + a sixth layer, which is composed of 'thickness 1 class. Um; is composed of Zns, 'thickness 1 class' and 8th coffee 4, thickness 154 ±〇1_. And by the work period: = the coating is called the layer above the reward layer. The 8th floor exhibition '妾 镜 枓 枓 ' 于 于 于 于 于 于 第 第 第 第 第 第 第 第 第 第 第 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工"The first time
”二，Λ層人_亦能夠以改用&與ZnS而取代W 成之8声入常層介電質多層膜來構成。該由以與ZnS所構 ^層第介3多層膜的塗層，具體而言，係由以下J ±〇.〇5㈣；第2層，传觸’由Ge所構成’厚度㈣ 第3声，传由Γ '、 所構成’厚度〇.89±〇.l//m ; 9係由Ge所構成，厚度〇 48+η μ # 構成，厚度0 64+() - · vm，弟5層，係由&所 士ο·1第6層，係由W所構成，厚 320062 12 200911434 度[隊^;第7層，係由&所構成，厚产〇65+〇1 …以及第8層’係“nS所構成，厚度…：0.1 且該塗層44a係積層於鏡材料層之上 接^ 料層’於其上依序積層第7至第1層，=觸鏡村 接觸，加工用雷射光^ 曰係與空氣 於該第！層的it MW、以大致45度的人射角入射 2者’針對本實施形態丨的雷射加玉裝 雷射光L的動作進行說明。從雷射振盪器2i#出之直： 偏光丄的加工用雷射光乙係藉由準直透鏡。而調整 =角’並藉由光圈手段2 3而依據在加工件2 〇上的目於 先束點徑來設定光束徑。接著，藉由分光手段Η，分光： 強度比為1:1的第卜第2加工用雷射光La、Lb，且第i :工光La係藉由相位板32而將偏光方向旋轉9〇 二it偏光。成為S偏光之第1加工用雷射光La係 /向》束鏡41、主偏向電鏡43反射，且藉由具有圓偏 主偏向電鏡44從8偏光（直線偏光）轉換為圓偏 先的雷射光，而照射於加工件20上。 /另一方面’以分光手段31而分光之第2加工用雷射光 Lb係以Ρ偏光之狀態直接入射於副偏向電鏡35，並穿透 偏向分束鏡41 ’再以主偏向電鏡43反射，且藉由具有圓 偏光鏡特性之主偏向電鏡44從卩偏光(直線偏光)轉換為圓 偏光的雷射光，而照射於與加工用雷射光La相異的位置。 相=於加工用雷射光La照射於加工件12上的位置，加工 田射光Lb的相對照射位置係由副偏向電鏡3 7、3 8來決 320062 13 k 200911434 定0 心：if由具有圓偏光鏡特性之主偏向電鏡44而從直 線偏先I換成圓偏光之第卜第2雷射光 的圓偏光，且是成為其圓偏光率為6〇%左右之摊圓偏光。 光時線偏光的雷射光轉換成正確的圓偏 光寻如弟2圖所不，係播用蚀古# t 、吏用使直線偏先的雷射光對圓偏 先鏡1的反射面以45度以射肖人射且使該人射 折彎9。度來反射之手段，若所入射之直線偏光的入射角： 離45度的話，便無法獲得 耵角偏 射切㈣“士 一 在厚鋼板的雷 射爾加工中，若圓偏光率非為至少卯以上的話，則會 產生加工溝槽傾斜等現象’而無法進行高精度的加工。 -但是，本發明的發明人#由實驗而確認了如第3圖所 不，對例如印刷基板等銅箱、樹脂的開孔加工中，只要圓 偏光率為3〇%以上’便能夠獲得真圓& 90%以上的加工 孔。第3圖係顯示實施形態！之進行印刷基板等銅荡、樹 脂的開孔加工時’其圓偏光率與加工孔真圓度之關係之實 驗數據。第3圖的橫轴表示圓偏光率（％)，其縱軸表示加工 孔真圓度（％)。在實施形態i中，係以主偏向電鏡44作為 圓偏光鏡’即使為了光束定位而使光束入射角自45度偏離 ±1〇度左右，仍然能夠充份確保圓偏光率為3〇%以上，因 此，進行光束掃描仍能夠獲得真圓度90%以上的加工孔。 如上所述，在實施形態〗中，雷射加工裝置係具有於 反射面形成有具有圓偏光鏡特性之塗層44a的主偏向電鏡 料，且藉由將入射於加工件12之第}、第2加工用雷射= 320062 14 200911434"Second, the layer of people can also be replaced by a combination of & & ZnS instead of W into the 8 layers of the dielectric layer of the dielectric layer. The coating of the 3 layers of the film with ZnS The layer, specifically, is composed of the following J ± 〇. 〇 5 (four); the second layer, the contact 'consisting of Ge' thickness (four) third sound, passed by Γ ', formed 'thickness 〇. 89 ± 〇.l //m ; 9 series consists of Ge, thickness 〇48+η μ # constituting, thickness 0 64+() - · vm, brother 5 layers, is composed of & 士士 ο·1, layer 6, by W Constructed, thick 320062 12 200911434 degrees [team ^; 7th layer, consists of & consists of thick 〇65+〇1 ... and 8th layer 'system "nS, thickness...:0.1 and the coating 44a is laminated on the mirror material layer and the layer is layered on the 7th to the 1st layer, which is contacted by the contact lens. The laser light is processed and the air is used in the first! The operation of the laser plus jade laser light L of the present embodiment will be described with respect to the it MW of the layer incident on the human angle of approximately 45 degrees. Straight out from the laser oscillator 2i#: The laser beam for processing the polarized beam is made of a collimating lens. The beam angle is set by adjusting the angle = and by the aperture means 2 3 in accordance with the target beam diameter on the workpiece 2 . Then, by the spectroscopic means Η, the second laser beam for processing, La, Lb, having an intensity ratio of 1:1, and the i-th worklight La are rotated by the phase plate 32 by 9 〇. It is polarized. The first processing laser beam La, which is the S-polarized light, is reflected by the beam mirror 41 and the main deflecting electron beam 43 and is converted from the polarized light to the polarized light by the polarized light deflecting electron beam 44 from the 8 polarized light (linear polarized light). And irradiated onto the workpiece 20. On the other hand, the second processing laser light Lb, which is split by the spectroscopic means 31, is directly incident on the sub-biasing electron microscope 35 in a state of being polarized, and penetrates the deflecting beam splitter 41' and is reflected by the main deflecting electron beam 43. Further, the main deflection electron beam 44 having the circular polarizing characteristics is converted from the polarized light (linearly polarized light) into the circularly polarized laser light, and is irradiated to a position different from the processing laser light La. Phase = the position where the processing laser light La is irradiated on the workpiece 12, and the relative irradiation position of the processed field light Lb is determined by the sub-bias electron microscope 3, 3, 3, 8 The main characteristic of the mirror characteristic is the polarized light of the second laser light which is changed from the straight line I to the second polarized light of the circularly polarized light, and is a rounded polarized light whose circular polarization ratio is about 6%. The laser light that is polarized by the optical time line is converted into the correct circular polarization. If it is not shown in the figure 2, it is used to etch the ancient #t, and the laser light that makes the line is biased first is 45 degrees to the reflection surface of the circular first mirror 1. Shooting and shooting the person. The means of reflection, if the angle of incidence of the incident linear polarization: from 45 degrees, then can not obtain the angle of the deflection cut (four) "Shiyi in the laser processing of thick steel plate, if the circular polarization is not at least卯 卯 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工 加工In the hole processing of the resin, as long as the circular polarization ratio is 3% or more, a machined hole of 90% or more can be obtained. Fig. 3 shows an embodiment of the process of performing copper plating of a printed circuit board or the like. Experimental data on the relationship between the circular polarization ratio and the roundness of the machined hole during the hole drilling process. The horizontal axis of Fig. 3 represents the circular polarization (%), and the vertical axis represents the roundness (%) of the machined hole. In the form i, the main deflection electron microscope 44 is used as the circular polarizer. Even if the incident angle of the light beam is shifted by about ±1 〇 from 45 degrees for the beam positioning, the circular polarization ratio can be sufficiently ensured to be 3% or more. Beam scanning can still be obtained The machining hole having a roundness of 90% or more. As described above, in the embodiment, the laser processing apparatus has a main deflection electron mirror formed with a coating 44a having a circular polarizing property on the reflecting surface, and is incident. In the first and second processing lasers of the workpiece 12 = 320062 14 200911434
La、Lb轉換為圓偏光，即能獲得真圓度高的加工孔。例如， 對於以習知的直線偏光的加工用雷射光只能獲得約 真圓度之銅箔貫穿加工的加工孔，係能夠獲得約的真 圓度之加工孔。此外，在實施形態1的雷射加工裝置中， 並未使用特別的光學系統，而是僅藉由於主偏向電鏡 的反射面形成塗層44a便能夠將直線偏光的 、 不系』力口 工用雷射光La、Lb轉換為圓偏光的雷射光，因此，能夠 广獲得防止裝置的大型化且能夠以低價格提供高性能的: 1 加工裝置之效果。 田、 實施形態2. 在實施形態1中，係於主偏向電鏡44的反射面形成具 有圓偏光鏡特性之塗層44a，而在實施形態2中，係將^ 取代而改於主偏向電鏡43的反射面形成具有圓偏光鏡特 性之塗層。該塗層係以與實施形態i的塗層術相同的材 料所構成貝把开> 悲2的其餘構成係與實施形態丨相同。 ("在本實施形態2中，第卜第2加工用雷射光以… 亦從直線偏光轉換為圓偏光，因此，與實施形態1相同地， 能夠進行高真圓度的加工。另外，在實施形態2中，除了 於主偏向電鏡43形成前述塗層之外’亦可再於主偏向電鏡 44形成與實施形態1相同的塗層44a。 【圖式簡單說明】 第1圖係顯示本發明實施形態1的雷射加工裝置之整 體構成圖。 乐2圖係將雷射光從直線偏光轉換成圓偏光的一般性 320062 15 200911434When La and Lb are converted into circularly polarized light, processed holes with high roundness can be obtained. For example, it is only possible to obtain a machined hole having a roundness of about 25 degrees of true roundness by processing laser light for processing with a conventional linearly polarized light. Further, in the laser processing apparatus according to the first embodiment, a special optical system is not used, but the linear light can be polarized only by forming the coating layer 44a on the reflecting surface of the main mirror. Since the laser light La and Lb are converted into circularly polarized laser light, it is possible to widely obtain an increase in size of the apparatus and to provide high performance at a low price: 1 The effect of the processing apparatus. Field 2. Embodiment 2 In the first embodiment, a coating layer 44a having a circular polarizing property is formed on a reflecting surface of the main deflection electron microscope 44. In the second embodiment, the main deflection electron microscope 43 is replaced by a main deflection electron microscope 43. The reflective surface forms a coating having the characteristics of a circular polarizer. This coating is composed of the same material as that of the coating of the embodiment i, and the rest of the constitution is the same as that of the embodiment. (" In the second embodiment, since the second processing laser light is converted from linearly polarized light to circularly polarized light, the high roundness can be processed in the same manner as in the first embodiment. In the second embodiment, the coating layer 44a similar to that of the first embodiment can be formed in addition to the main deflection electron microscope 43. The first embodiment shows the present invention. The overall configuration of the laser processing apparatus according to the first embodiment. The Le 2 diagram is a general conversion of laser light from linearly polarized light to circularly polarized light. 320062 15 200911434
構成的說明圖。 第3圖係顯示實施形態 與加工孔的真圓度之關係之3 [ 主要元件符號說明】 1 圓偏光鏡 10 11 XY平台 12 20 雷射光產生部 21 22 準直透鏡 23 30 加工用雷射光分光部 31 分光手段 32 33 轉向鏡 34 35 ' 36 副偏向電鏡 2Π、 40 雷射統合部 41 42 主偏向手段 43、 44a 塗層 45 > 47 集光透鏡 A1、 A4 、A6、A7 光路 L、I 之加工用雷射光的圓偏光率 :驗資料。 加工部 加工件 雷射振盪器 光圈手段 相位板 副偏向手段 38副偏向電鏡掃插器 偏光分束鏡 44 主偏向電鏡 46主偏向電鏡掃描器 Α2'Α3、Α5 光軸 Lb 雷射光 320062 16An explanatory diagram of the composition. Fig. 3 shows the relationship between the embodiment and the roundness of the machined hole. [Description of main components and symbols] 1 Circular polarizer 10 11 XY stage 12 20 Laser light generating unit 21 22 Collimating lens 23 30 Laser beam for processing Part 31 Spectroscopic means 32 33 Turning mirror 34 35 ' 36 Sub-biasing electron microscope 2Π, 40 Laser integration unit 41 42 Main deflection means 43, 44a Coating 45 > 47 Light collecting lens A1, A4, A6, A7 Optical path L, I The circular polarizing rate of laser light for processing: inspection data. Machining part Machining parts Laser oscillator Aperture means Phase plate Sub-bias means 38 Sub-directed electron mirror sweeper Polarized beam splitter 44 Main deflection electron microscope 46 Main deflection electron microscope scanner Α2'Α3, Α5 Optical axis Lb Laser light 320062 16