TW200910021A - Pattern forming method, method of manufacturing a thin-film transistor substrate, method of manufacturing a liquid crystal display, and photomask - Google Patents

Pattern forming method, method of manufacturing a thin-film transistor substrate, method of manufacturing a liquid crystal display, and photomask Download PDF

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Publication number
TW200910021A
TW200910021A TW097123900A TW97123900A TW200910021A TW 200910021 A TW200910021 A TW 200910021A TW 097123900 A TW097123900 A TW 097123900A TW 97123900 A TW97123900 A TW 97123900A TW 200910021 A TW200910021 A TW 200910021A
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Taiwan
Prior art keywords
exposure
pattern
light
shielding
transfer target
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TW097123900A
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Chinese (zh)
Inventor
Michiaki Sano
Yasuki Kimura
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Hoya Corp
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Publication of TW200910021A publication Critical patent/TW200910021A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

A pattern forming method includes an exposure step of irradiating an exposure light to an object by the use of a photomask. The photomask 5 used in the exposure step includes a first light-shielding pattern 53 formed on a transparent substrate 51 and a second light-shielding pattern 55 formed on the same transparent substrate 51 and different from the first light-shielding pattern. In the exposure step, first exposure 61 is performed on the object 1 by the use of the first light-shielding pattern 55 of the photomask 5. Next, second exposure 62 is performed on the object 1 by the use of the second light-shielding pattern 55 to overlap the first exposure. Thus, exposure is performed on the object 1 at irradiation levels different from region to region.

Description

200910021 九、發明說明： 【發明所屬之技術領域】 本發明係關於使用光罩而以可於被轉印體上之光阻上 產生階梯差的方式來形成轉印圖案的圖案形成方法、使用 此圖案形成方法之薄膜電晶體基板的製造方法、及液晶顯 示裝置（Liquid Crystal Display:以下稱爲 LCD)的製造方法 、以及使用於此圖案形成方法之光罩。 【先前技術】 現今’在LCD之領域中，薄膜電晶體液晶顯示裝置 (Thin Film Transistor-Liquid Crystal Display:以下稱爲 TFT-LCD) ’因比CRT(陰極射線管）具有更輕薄且耗電低的 優點，所以，現在其商品化進程得以迅速發展。TFT-LCD 具有將排列爲矩陣狀之各像素配置TFT所成的構造之TFT 基板、及對應於各像素配置有紅、綠及藍色像素圖案之彩 色濾光片，在液晶相的介設下進行重疊組合之槪略構造。 TFT-LCD的製造步驟數繁多，僅在TFT基板就使用5至6 片的光罩進行製造。在此種狀況下，提出了 一種藉由使用 具有遮光部、透光部及半透光部的光罩（稱爲灰階遮罩）， 以削減利用於TFT基板之製造的光罩片數的方法（例如，專 利文獻1:日本特開2005-3793 3號公報）。在此，半透光部係 指在使用遮罩將圖案轉印於被轉印體上時，使透過之曝光 光線的透光量減低規定量，以控制被轉印體上之光阻膜顯 像後的殘膜量的部分。 灰階遮罩具有：露出透明基板之透光部；遮光部’係在 200910021 透明基板上形成遮蔽曝光光線之遮光膜所構成；及灰階部 ，係在透明基板上形成遮光膜或半透光膜，且比透光率爲 100%之情況更爲減低透光量，而使規定量之光線透過。又 ，透明基板之透光率係設爲1 00%。作爲此種之灰階遮罩， 具有半透光部係於遮光膜或半透光膜上，在曝光條件下形 成圖像解析界限以下之微細圖案者，或是，形成具有規定 之透光率的半透光膜者。 第7圖爲說明使用灰階遮罩之圖案轉印方法用的剖視 圖。第7圖所示灰階遮罩20,係於被轉印體30上形成膜厚 呈階梯狀而異之阻劑圖案33。又，在第7圖中，符號32A 、32B顯示在被轉印體30中積層於基板31上的膜。 第7圖所示灰階遮罩20具有：遮光部21，係於該灰階 遮罩20之使用時，用以遮蔽曝光光線（透光率大致爲0%) ;透光部22，係利用使透明基板24之表面露出而使曝光光 線透過；及半透光部23，係在將透光部22之曝光光線透光 率設爲100%時，使透光率減低20至60%之程度。半透光 部23係由形成於透明基板24上之半透光性的半透光膜26 所構成，或是，在使用遮罩時之曝光條件下形成超過圖像 解析界限的微細圖案（未圖示）所構成。遮光部2 1係由形成 於半透光膜26上之遮光膜25所構成。 在使用如上述之灰階遮罩20時，曝光光線實質上在遮 光部21未透過，且曝光光線在半透光部23被減少。因此 ，塗布於被轉印體30上之阻劑膜（正型光阻膜），在轉印後 並經過顯像時，在對應於遮光部21之部分，其膜厚變厚， 200910021 在對應於半透光部23之部分’其膜厚變薄’而在對應於透 光部22之部分則無膜（實質上不生成殘膜）。其結果，可於 膜32B上形成膜厚呈階梯狀而異（即、具階梯差）之阻劑圖 案33。 然後，在第7圖所示之阻劑圖案3 3的無膜部分，對被 轉印體30上之例如膜32A及32B實施第1蝕刻，藉由灰化 (ashing)等除去阻劑圖案33之膜厚較薄的部分，在此部分， 對被轉印體30上之例如膜32B實施第2蝕刻。如此，藉由 使用一片之灰階遮罩20，於被轉印體30上形成膜厚呈階梯 狀而異之阻劑圖案33,可實施以往之2片光罩的步驟，可削 減遮罩的片數。換言之，除遮光部與透光部以外，藉由使用 具有半透光部之灰階遮罩（或亦稱爲多灰階遮罩），可於被轉 印體上形成猶如進行了多次圖案加工的阻劑圖案。 【發明内容】 上述之圖案轉印方法，例如在製造液晶顯示裝置時極 爲有用，其可在被轉印體上，且在對應於該灰階遮罩之半 透光部23的區域形成TFT通道部。另一方面，近年來，隨 著液晶顯示裝置被廣泛地利用於行動電話等之便攜式裝置 中，尤其是此通道部之圖案具有趨於微細化的傾向。這是 因爲通道部之微細化，會涉及到對TFT裝置的動作速度或 LCD的亮度等液晶顯示裝置之性能上有利的作用。 然而，即使在該灰階遮罩上之半透光部2 3形成例如未 達曝光裝置之圖像解析界限（例如3^m左右）的線寬之圖案 ’此圖案仍無法被忠實地轉印於被轉印體上。例如，在半 200910021 透光部23上形成線寬爲1 # m左右之圖案的情況，當使用 此灰階遮罩’並以現在一般之液晶顯示器用曝光裝置進行 圖案轉印時，線寬爲左右之圖案係在曝光裝置的圖像 解析界限以下之尺寸。因此，在被轉印體上不容易形成具 有寬度爲1 // m左右且具有規定阻劑殘膜値之部分（例如， 若半透光部23與遮光部2 1相鄰的話，阻劑殘膜値與遮光 部2 1相異之階梯差部分）的阻劑圖案。若在被轉印體上無 法形成具有所需寬度（例如，1 V m左右）的階梯差部分且最 好是具有平坦部之阻劑殘膜的話，在欲使用此阻劑圖案製 造TFT時，形成之例如通道部會產生圖案缺陷，恐有引起 液晶顯示裝置的動作不良之虞。當然，若是使用具備類似 現在用於LSI製造用曝光裝置之短波長的曝光光線（KrF準 分子雷射（excimner laser)(波長 248nm)、ArF準分子雷射（ 波長193nm)等）及高數値孔隙之光學系的曝光裝置的話，即 使爲l^m左右之微細圖案，仍能進行圖案轉印。然而，此 種LSI製造用曝光裝置原本在光源及大小尺寸等方面就與 液晶顯示裝置製造用曝光裝置完全不同，且非常之高價， 所以’其會有造成液晶顯示裝置之成本大幅提高等的許多 不利因素。 藉此，希望找出一種可形成阻劑圖案的方法，其可使 用現在之液晶顯示器用曝光裝置，即使在圖像解析界限（例 如1 V m左右）以下的微細階梯差部分，仍能形成此圖案， 且可在被轉印體上形成膜厚呈階梯狀而異（即，具階梯差） 之阻劑圖案。 200910021 本發明係鑒於上述情事而開發完成者，其目的在於’ 提供一種圖案形成方法，即使不使用圖像解析度非常高、 大規模且咼價的曝光裝置，仍可形成具有曝光裝置之圖像 解析界限以下’例如1 V m左右或其以下的微細阻劑膜厚的 階梯差部分之轉印圖案。 爲了解決上述課題，本發明具有以下之構成。 (構成1) f : —種圖案形成方法，其具有曝光步驟，係使用光罩， 並對被轉印體照射曝光光線，在該曝光步驟中依部位而選 擇性地減低對被轉印體之曝光光線的照射量，在被轉印體 上之光阻顯像後，形成包含殘膜値相異部分的所需轉印阻 劑圖案，其特徵爲： 該曝光步驟中所使用之光罩，係具有形成於同一透明 基板上之第1遮光圖案及與該第1遮光圖案不同之第2遮 光圖案’在該曝光步驟中，使用該光罩之該第1遮光圖案 C ί ’於被轉印體上進行第1曝光，接著，使用該光罩之該第 2遮光圖案’與被轉印體上之該第1曝光重疊地進行第2 曝光，在被轉印體上進行曝光光線之照射量會依部位而異 的曝光。 (構成2) 如構成1之圖案形成方法，其中該第1曝光及該第2 曝光係相等之曝光量。 (構成3) 如構成1之圖案形成方法，其中該第丨曝光及該第2 200910021 曝光係相異之曝光量。 (構成4) 如構成1至3中任一項之圖案形成方法，其中該第1 曝光及該第2曝光當中至少一方，係在單獨地對被轉印體 進行曝光時，於被轉印體上之光阻顯像後會產生規定量之 殘膜的曝光量。 (構成5) f 如構成4之圖案形成方法，其中該第1曝光之曝光量 ’係在單獨地對被轉印體進行曝光時，於被轉印體上之光 阻顯像後實質上不會產生殘膜的曝光量，該第2曝光之曝 光量，係在單獨地對被轉印體進行曝光時，於被轉印體上 之光阻顯像後會產生該規定量的殘膜之曝光量。 (構成6) 如構成4之圖案形成方法’其中該第1曝光之曝光量 ，係在單獨地對被轉印體進行曝光時，於被轉印體上之光 阻顯像後會產生該規定量的殘膜之曝光量，該第2曝光之 曝光量’係在單獨地對被轉印體進行曝光時，於被轉印體 上之光阻顯像後實質上不會產生殘膜的曝光量。 (構成7) 如構成4之圖案形成方法，其中該第1曝光及第2曝 光之曝光量，均係在單獨地對被轉印體進行曝光時，於被 轉印體上之光阻顯像後會產生該規定量的殘膜之曝光量。 (構成8) 如構成1至7中任一項之圖案形成方法，其中藉由使 -10- 200910021 被轉印體在該第1曝光及第2曝光之間移動，依序使該第 1遮光圖案及該第2遮光圖案對於被轉印體成爲相對地相 同之位置。 (構成9) 如構成1至7中任一項之圖案形成方法，其中藉由使 光罩在該第1曝光及第2曝光之間移動，依序使該第1遮 光圖案及該第2遮光圖案對於被轉印體成爲相對地相同之 / 位置。 (構成10) 如構成1至9中任一項之圖案形成方法，其中該第1 遮光圖案之遮光部與透光部的境界位置X、和該第2遮光 圖案之遮光部與透光部的境界位置y之相隔距離，在該第 1遮光圖案與該第2遮光圖案重疊時，爲2μιη以上。 (構成11) 一種薄膜電晶體基板之製造方法，其包含使用如構成 { ; 1至10中任一項之圖案形成方法的圖案形成步驟。 (構成12) 一種液晶顯示裝置之製造方法，其包含使用如構成1 至1 0中任一項之圖案形成方法的圖案形成步驟。 (構成13) 一種光罩，係具有至少2個遮光圖案，該等遮光圖案 係於同一基板上把握相對位置，依序於相同之被轉印體上 進行轉印，藉以形成一個多重轉印圖案，其特徵爲：該2 個遮光圖案，係在重疊地照射曝光光線時，當將曝光光線 -11- 200910021 之透光量成爲最大的透光區域之透光率設爲100%時，具有 透光率成爲20〜60 %的半透光區域及透光率實質上成爲〇 % 的遮光區域。 (構成14) 一種光罩，係在使用光罩’並對被轉印體照射曝光光 線時，依部位而選擇性地減低對被轉印體之曝光光線的照 射量，於被轉印體上之光阻上形成包含殘膜値相異部分的 所需轉印圖案，其特徵爲；該光罩係具有形成於同一透明 基板上之第1遮光圖案及與該第1遮光圖案不同之第2遮 光圖案；且在以對於被轉印體成爲相對地相同位置的方式 依序配置該光罩之該第1遮光圖案及該第2遮光圖案並進 行曝光時，在被轉印體上形成曝光量會依部位而異之轉印 圖案。 (構成15) 如構成13或14之光罩，其中該第1遮光圖案之遮光 部與透光部的境界位置X、和該第2遮光圖案之遮光部與 透光部的境界位置y之相隔距離，在該第1遮光圖案與該 第2遮光圖案重疊時，爲2^111以上。 (構成16) 一種圖案形成方法，其具有曝光步驟，係使用具有遮 光部及透光部之光罩，並對被轉印體照射曝光光線，在該 曝光步驟中依部位而選擇性地減低對被轉印體之曝光光線 的照射量，於被轉印體上之光阻上形成包含殘膜値相異部 分的所需轉印圖案，其特徵爲：在該曝光步驟中，使用形 -12- 200910021 成於該光罩上之遮光圖案，在被轉印體上進行第1曝光， 接著’改變曝光光線之聚焦（focusing)條件，於該被轉印體 上使用該遮光圖案進行第2曝光；藉由改變該第1曝光及 該第2曝光之曝光光線的聚焦條件，於被轉印體上進行曝 光光線之照射量會依部位而異的曝光。 (構成17) 如構成16之圖案形成方法，其中該第1曝光及該第2 f" 曝光當中至少一方，係在單獨地對被轉印體進行曝光時， 被轉印體上之光阻顯像後會產生規定量之殘膜的曝光量。 (構成18) —種光罩，係具有多重轉印用圖案，其於透明基板上 具有遮光部及透光部，藉由以依序不同之聚焦條件，於相 同之被轉印體上進行多次轉印，而形成一個多重轉印圖案 ，其特徵爲：該多重轉印圖案係在對被轉印體上之光阻進 行顯像時，具有第2阻劑殘膜値部分夾著第1阻劑殘膜値 部分之部分。 (構成19) 如構成1 8之光罩，其中該第1阻劑殘膜値部分係阻劑 殘膜値最大之部分’該第2阻劑殘膜値部分係殘膜値比第 1阻劑殘膜値部分小的部分。 (構成20) —種圖案形成方法，其具有曝光步驟，係使用具有具 遮光部及透光部之遮光圖案的光罩，並對被轉印體照射曝 光光線，在該曝光步驟中依部位而選擇性地減低對被轉印 •13- 200910021 體之曝光光線的照射量，於被轉印體上之光阻上形成包含 殘膜値相異部分的所需轉印圖案，其特徵爲：在該曝光步 驟中，將該光罩之該遮光圖案配置於該被轉印體上之第1 位置，在該被轉印體上進行第1曝光，接著，使該遮光圖 案對於該被轉印體相對移動規定距離而配置於該被轉印體 上之第2位置，於該被轉印體上進行第2曝光；藉由該第 1曝光及該第2曝光之重疊曝光，於被轉印體上進行曝光 光線之照射量會依部位而異的曝光。 (構成21) 如構成20之圖案形成方法，其中該第1曝光及該第2 曝光當中至少一方，係在單獨地對被轉印體進行曝光時，於 被轉印體上之光阻顯像後會產生規定量之殘膜的曝光量。 (構成22) 一種光罩，係具有多重轉印用圖案，其於透明基板上 具有遮光部及透光部，對相同之被轉印體，配置於不同之 相對位置，依序進行多次轉印，藉以形成一個多重轉印圖 案，其特徵爲： 該多重轉印用圖案係在對被轉印體上之光阻進行顯像 時，以具有第2阻劑殘膜値部分夾著第1阻劑殘膜値部分 之部分的方式形成阻劑圖案。 (構成23) 如構成22之光罩，其中該第1阻劑殘膜値部分係阻劑 殘膜値最大之部分’該第2阻劑殘膜値部分係殘膜値比第 1阻劑殘膜値部分小的部分。 -14- 200910021 (構成24) 一種圖案形成方法，其具有曝光步驟’係使用光罩’ 並對被轉印體照射曝光光線，在該曝光步驟中依部位而選 擇性地減低對被轉印體之曝光光線的照射量，於被轉印體 上之光阻上形成包含殘膜値相異部分的所需轉印圖案，其 特徵爲：該曝光步驟中所使用之光罩，係具有形成於同一 透明基板上之第1圖案及與該第1圖案不同之第2圖案； 在該曝光步驟中包含：將該光罩配置於該被轉印體上之第1 位置，在該被轉印體上同時對該第1圖案及第2圖案進行 第1曝光’接著’使該光罩對於該被轉印體相對移動1個 圖案單位之距離而配置於該被轉印體上的第2位置上，於 該被轉印體上同時對該第1圖案及第2圖案進行第2曝光 的步驟：藉由該第1圖案及該第2圖案係在被轉印體上相 對地相同之位置被轉印’而於被轉印體上進行曝光光線之 照射量會依部位而異的曝光。 (構成25) 如構成24之圖案形成方法，其中重複進行一面使該光 罩對於該被轉印體進一步以每一次1個圖案單位之距離進 行相對移動’一面於該被轉印體上同時對該第1圖案及該 第2圖案進行曝光的步驟。 (構成26) 如構成24或25之圖案形成方法，其中該第1曝光及 該第2曝光係相等之曝光量。 (構成27) 200910021 如構成24 3 圖案及該第2圖 案。 (構成28) 如構成2 4 3 圖案及該第2圖 之曝光量減低規 (構成29) 一種光罩， 光線，依部位而 射量，於被轉印 所需轉印圖案， 基板上之第1圖 圖案及該第2圖 之曝光量減低規 體成爲相對地相 案及該第2圖案 會依部位而異之 (構成30) 如構成2 9 = 以每一次1個圖 於該被轉印體上 ，藉此而在被轉 轉印圖案。 S 26中任一項之圖案形成方法’其中該第1 案均係由遮光部及透光部所構成之遮光圖 ΐ 26中任一項之圖案形成方法’其中該第1 案當中至少一方，係包含遮光部及將透過 定量的半透光部之圖案。 係在使用光罩，並對被轉印體上照射曝光 選擇性地減低對被轉印體之曝光光線的照 體上之光阻上形成包含殘膜値相異部分的 其特徵爲：該光罩係具有形成於同一透明 案及與該第1圖案不同之第2圖案；該第1 案當中至少一方，係包含遮光部及將透過 定量的半透光部之圖案；在以對於被轉印 同位置的方式依序配置該光罩之該第1圖 並進行曝光時，在被轉印體上形成曝光量 轉印圖案。 L光罩，其中一面使該光罩對於該被轉印體 案單位之距離進行相對移動，一面重複地 同時對該第1圖案及該第2圖案進行曝光 印體上形成曝光量會依部位而異之多灰階 -16 - 200910021 根據本發明之圖案形成方法，即使不使用圖像解析度 非常高、大規模且高價的曝光裝置，仍可精度良好地在被 轉印體上形成膜厚呈階梯狀而異（即，具階梯差）之所需阻 劑圖案。例如，使用現在之液晶顯示器用曝光裝置，可在 被轉印體上精度良好地形成含此種i/zm左右之微細寬度 的阻劑殘膜的阻劑圖案。 當然，除液晶顯示裝置之製造以外，在其他之用途（ 例如’ LSI裝置之製造）上，藉由應用本發明之圖案形成方 法’對被轉印體減低所需部位的曝光量，亦可形成非常微 細之多級灰階的圖案。 又，根據本發明，在利用多次曝光進行圖案之轉印時 ，不需要一面交換2個以上之光罩一面進行轉印。因此， 對防止2次以上之轉印時不可避免之對位偏差所引起的圖 案缺陷，具有極爲顯著的效果。 另外，在使用以往之灰階遮罩的圖案轉印方法時，在 灰階遮罩之製造階段具有2次描繪步驟，在2次描繪時根 本無法避免對位偏差之產生，轉印圖案精度亦會受到影響 。相對於此，使用於本發明之圖案形成方法的光罩，係具 有在同一透明基板上藉由一次之描繪步驟而同時形成的圖 案（在該第1構成中，第1遮光圖案及第2遮光圖案），所以 ，可形成反映描繪機所具有之描繪精度（無描繪時之對位偏 差引起的要素）的遮光圖案。因此，在本發明中，可高精度 地維持第1曝光與第2曝光之2個遮光圖案間的對位。 又，在本發明之第1構成中，在第1曝光與第2曝光 -17- 200910021 中，在將曝光裝置固定之狀態下使光罩與被轉印體之相對 位置移動的情況較爲有利’此時之對位能在曝光裝置上進 行，所以可高精度地進行定位。 另外，根據第16構成’例如，在形成具有第2阻劑殘 膜値部分夾著第1阻劑殘膜値部分之部分的轉印圖案之情 況（形成在厚膜之殘膜區域的兩端或周圍具有薄膜之殘膜 區域的轉印圖案的情況等）’可避免因對位偏差而產生非對 稱之圖案的情況。並且，在進行多次曝光時，因遮罩上之 圖案與轉印有該圖案的被轉印體上的相對位置不變，所以 ，可抑制對位偏差，發揮使用之曝光裝置所具有的對位精 度，可精度良好且容易地形成所需之阻劑圖案。 另外’根據第20構成，例如，在形成在厚膜之殘膜區 域的兩端或周圍具有薄膜之殘膜區域的轉印圖案的情況， 可避免因對位偏差而產生非對稱之圖案的情況。並且，雖 需要在第1曝光與第2曝光之間，使被轉印體與光罩相對 地移動，但因對位係可在曝光裝置上進行，所以可高精度 地進行定位。其結果，亦可於被轉印體上精度良好地形成 例如含1 Ai m以下的微細圖案寬度之阻劑殘膜的阻劑圖案。 另外，根據第24構成，例如，在被轉印體上藉由多面 附著而形成轉印圖案的情況，一面使形成有第1圖案及第 2圖案之光罩對於被轉印體以每一次一個圖案單位之距離 進行相對移動（例如，一個面板距離），一面在被轉印體上 重複進行第1圖案及第2圖案之同時曝光。因此，在能以 —定之曝光條件進行曝光的基礎上，在進行多次曝光時， 200910021 可縮短各曝光間之被轉印體與光罩的相對移動時之移動距 離’可以高精度進行定位。另外，在曝光時不需要遮蔽第 1圖案及第2圖案之任一方的操作。 如上述，根據本發明，可精度良好地在被轉印體上形 成膜厚呈階梯狀而異之多灰階的所需阻劑圖案。另外，可 精度良好地在被轉印體上形成例如含1 m左右的微細寬 度之阻劑殘膜的阻劑圖案。 【實施方式】 以下，根據多個實施形態來說明本發明。 [第1實施形態] 第1圖爲顯示本發明之圖案形成方法的第1實施形態 之剖視圖。 第1實施形態之圖案形成方法，如第1圖所示，使用 形成於光罩5上之第1遮光圖案53，在被轉印體1上進行 第1曝光61，然後，使用同樣形成於光罩5上之第2遮光 圖案55，同樣在被轉印體1上之相同位置上重疊地進行第 2曝光62。 以下’以使用正型光阻之情況爲例進行說明。在此處 ，使規定光量之曝光光線透過而進行了充分曝光之部分， 係在將被轉印體1上之光阻感光，並在顯像後不會產生殘 膜。因此，該第1遮光圖案53係形成爲僅於被轉印體1上 之光阻膜1 3顯像後實質上不產生殘膜的區域，使曝光光線 透過（換言之’於該光阻膜13顯像後產生殘膜的區域係遮 光）。另一方面’該第2遮光圖案55係形成爲僅於該光阻 -19- 200910021 膜13顯像後產生規定量之薄膜的殘膜的區域’使曝光光線 透過。藉此，藉由使用該第1遮光圖案53的第1曝光61 ，劃定在被轉印體1上實質上不產生光阻膜13之殘膜的區 域，接著，藉由使用該第2遮光圖案55的第2曝光62,劃 定在被轉印體1上之光阻膜13顯像後產生規定量之薄膜的 殘膜的區域、及因實質上未被曝光而於光阻膜13顯像後產 生厚膜之殘膜的區域。 光罩5之該第1遮光圖案53及第2遮光圖案55,均在 相同之透明基板（例如，石英基板等）5 1上，例如以由鉻（C〇 等所構成之遮光膜形成規定之圖案狀，並以第1遮光圖案 53係形成區域52及第2遮光圖案55係形成區域54之方式 ，於相同之透明基板51上劃分成適宜之區域。又，該遮光 膜係利用與使用之曝光光線的波長之關係而以具有適當之 遮光性的方式，來選定膜材質及膜厚所形成。 又，該光罩5係藉由採用例如在透明基板51上形成遮 光膜之遮罩基底，並以光微影法圖案加工遮光膜所獲得。 另外，因具有在同一透明基板51上藉由一次之描繪步驟所 同時形成的第1遮光圖案53及第2遮光圖案55，所以，可 形成純粹依賴於描繪機所具有之描繪精度（無描繪時之對 位偏差所引起的因素）的遮光圖案。 在第1實施形態中，該第1曝光61之曝光量，在被轉 印體1上之光阻膜13爲正型光阻的情況，係在單獨曝光時 ，於被轉印體1上之光阻膜13顯像後實質上不產生殘膜的 曝光量。接著，該第2曝光62之曝光量，係在單獨曝光時 -20- 200910021 ，於該光阻膜13顯像後產生規定量之薄膜的殘膜[設實質 上未曝光區域之光阻膜顯像後的殘膜量（或殘膜膜厚）爲 100%時的20%〜60%之範圍的殘膜量]的曝光量。又，該第 1曝光6 1及第2曝光62之曝光波長係可利用例如現有之液 晶顯示器用曝光裝置所使用的i線（365nm)〜g線（436nm)。 又，在第1圖中，被轉印體1之符號1 2A、12B係顯示 在被轉印體1中積層於基板11上之膜，其根據所製造之基 板等的種類而選擇適當之膜材質、膜厚及膜數。 在本發明中，在同一透明基板上配置2個遮光圖案， 並依此順序藉由在同一被轉印體上進行曝光，而可進行微 細圖案之轉印。藉由'在同一透明基板上形成2個遮光圖案 ，以形成依照描繪機所具有之描繪精度的遮光圖案，2個 遮光圖案之間的對位，可藉由搭載於曝光裝置上的定位機 構（雷射干涉儀等）而精度良好地加以維持。爲了依序交換 曝光之2個遮光圖案，可使被轉印體移動，亦可使光罩移 動。亦即，藉由使被轉印體1移動於第1曝光61與第2曝 光62之間，以使第1遮光圖案53與第2遮光圖案55對於 被轉印體1依序成爲相對地相同之位置。或是，藉由使光 罩5移動於第1曝光61與第2曝光62之間，以使第1遮 光圖案53與第2遮光圖案55對於被轉印體1依序成爲相 對地相同之位置。又，藉由使兩者相互移動，亦可使第1 遮光圖案53與第2遮光圖案55對於被轉印體1依序成爲 相對地相同之位置。又，在使用第1遮光圖案5 3之第1曝 光61時，可由適當之遮蔽板4等覆蓋光罩5上之第2遮光 -21 - 200910021 圖案55，而在使用第2遮光圖案55之第2曝光62時，可 由遮蔽板4等覆盖第1遮光圖案53。 如上述’藉由使用光罩5之第1遮光圖案53的第1曝 光61、及使用第2遮光圖案55之第2曝光62而對被轉印 體1上進行重疊曝光’對被轉印體1上之光阻膜1 3進行曝 光光線之照射’以形成顯像後實質上不產生殘膜的區域（第 1圖中由A的影線所示）、顯像後產生規定量之薄膜的殘膜 / 的區域（由B的影線所示）、及光阻膜1 3實質上未被曝光而 於顯像後產生厚fl吴之殘膜的區域（由C的影線所示）。 於是，當對結束了第1曝光61及第2曝光62之被轉 印體1上的光阻膜1 3進行顯像時，如第1 (c)圖所示，在被 轉印體1上形成包含厚膜之殘膜部位1 3 a、薄膜之殘膜部位 13b及無殘膜（實質上不產生殘膜）的部位13c之膜厚呈階梯 狀而異（即具階梯差）之阻劑圖案。 此時，薄膜之殘膜部位13b係對於厚膜之殘膜部位13a ，可爲其20%〜60%之膜厚。 根據以上之第1實施形態的圖案形成方法，即使不使 用圖像解析度非常高、大規模且高價的曝光裝置，仍可精 度良好地在被轉印體上形成所需之膜厚呈階梯狀而異（具 階梯差）的阻劑圖案。例如，可使用現有之液晶顯示器用曝 光裝置，精度良好地形成包含微細圖案寬度之阻劑殘膜的 阻劑圖案。 此在可直接使用曝光光源（具有通常稱爲i線〜g線之 波長範圍的光源），並可提高實效的圖像解析度，且此時不 -22- 200910021 需要對位對策之方面，相當簡便且有用。 本發明之圖案形成方法，例如可適合於液晶顯示裝置 等的製造，但除液晶顯示裝置的製造以外，在其他之用途（ 例如，LSI裝置製造）上，藉由應用本發明之圖案形成方法 ，針對被轉印體減少所需部位之曝光量，亦可形成非常微 細之多級灰階的圖案。另外，此時因爲不使用2個以上之 遮罩，因此具有可防止2個以上之遮罩的對位偏差所引起 的圖案缺陷。 [第2實施形態] 第2圖爲顯示本發明之圖案形成方法的第2實施形態 之剖視圖。 與第1實施形態相同，第2實施形態之圖案形成方法 ，如第2圖所示，使用形成於光罩7上之第1遮光圖案73 ，在被轉印體1上進行第1曝光61，然後，使用形成於光 罩7上之第2遮光圖案75，在被轉印體1上之相同位置上 重疊地進行第2曝光62。 然而，在第2實施形態中，該第1遮光圖案73係形成 爲僅於被轉印體1上之光阻膜13顯像後產生規定量之薄膜 的殘膜的區域，使曝光光線透過。另一方面，該第2遮光 圖案75係形成爲僅於該光阻膜1 3顯像後實質上不產生殘 膜的區域，使曝光光線透過。藉此，藉由使用該第1遮光 圖案73的第1曝光61，在被轉印體1上劃定光阻膜13產 生規定量之薄膜的殘膜的區域，接著，藉由使用該第2遮 光圖案75的第2曝光62，劃定被轉印體1上之光阻膜13 -23- 200910021 顯像後實質上不產生殘膜的區域、及因實質上未被曝光而 在光阻膜1 3顯像後產生厚膜之殘膜的區域。 光罩7之第1遮光圖案73及第2遮光圖案75,均在相 同之透明基板（例如，石英基板等）7 1上，以第1遮光圖案 73係形成區域72及第2遮光圖案75係形成區域74之方式 ，劃分成適宜之區域。 在第2實施形態中，該第1曝光61之曝光量，在被轉 印體1上之光阻膜1 3爲正型光阻的情況，係在單獨曝光時 ，在被轉印體1上之光阻膜1 3顯像後產生規定量之薄膜的 殘膜的曝光量，接著該第2曝光62之曝光量，係在單獨曝 光時，在該光阻膜13顯像後實質上不產生殘膜的曝光量。 又，該第1曝光61及第2曝光62之曝光波長係與第1實 施形態相同，可利用例如現有之液晶顯示器用曝光裝置所 使用的i線（365nm)〜g線（436nm)。 爲了依序交換曝光之2個遮光圖案73、75’可藉由使 被轉印體1移動於第1曝光61與第2曝光62之間，以使 第1遮光圖案73與第2遮光圖案75對於被轉印體1依序 成爲相對地相同之位置。或是，藉由使光罩7移動於第1 曝光61與第2曝光62之間，以使第1遮光圖案73與第2 遮光圖案7 5對於被轉印體1依序成爲相對地相同之位置。 又，在使用第1遮光圖案73之第1曝光61時’可由遮蔽 板4等覆蓋第2遮光圖案75，而在使用第2遮光圖案75 之第2曝光62時，可由遮蔽板4等覆蓋第1遮光圖案73 -24- 200910021 如上述，藉由使用光罩7之第1遮光圖案73的第1曝 光61、及使用第2遮光圖案75之第2曝光62而對被轉印 體1上進行重疊曝光’對被轉印體1上之光阻膜13進行曝 光光線之照射，以形成顯像後實質上不產生殘膜的區域（第 2圖中由A的影線所示）、顯像後產生規定量之薄膜的殘膜 的區域（由B的影線所示）、及光阻膜實質上未被曝光而於 顯像後產生厚膜之殘膜的區域（由C的影線所示）。 於是，當對結束了第1曝光61及第2曝光62之被轉 印體1上的光阻膜13進行顯像時’如第2(c)圖所示’在被 轉印體1上形成包含厚膜之殘膜部位1 3 a、薄膜之殘膜部位 13b及無殘膜（實質上不產生殘膜）的部位13c之膜厚呈階梯 狀而異（即，具階梯差）之阻劑圖案。 [第3實施形態] 第3圖爲顯示本發明之圖案形成方法的第3實施形態 之剖視圖。 與第1實施形態相同，第3實施形態之圖案形成方法 ，如第3圖所示，使用形成於光罩8上之第1遮光圖案83 ，在被轉印體1上進行第1曝光61，然後，使用形成於光 罩8上之第2遮光圖案85，在被轉印體1上之相同位置上 重疊地進行第2曝光62。 然而，在第3實施形態中，該第1遮光圖案83係形成 爲僅於被轉印體1上之光阻膜13顯像後產生規定量之薄膜 的殘膜的區域及實質上不產生殘膜的區域，使曝光光線透 過。另一方面，該第2遮光圖案85係形成爲僅於該光阻膜 -25- 200910021 1 3顯像後實質上不產生殘膜的區域，使曝光光線透過。藉 此，藉由使用該第1遮光圖案83的第1曝光61，劃定在被 轉印體1上因實質上未被曝光而在光阻膜13顯像後產生厚 膜之殘膜的區域。接著，藉由使用該第2遮光圖案85的第 2曝光62，劃定被轉印體1上之光阻膜1 3顯像後實質上不 產生之殘膜的區域、及光阻膜13顯像後產生規定量之薄膜 的殘膜的區域。 f 光罩8之該第1遮光圖案83及第2遮光圖案85,均在 气 相同之透明基板（例如，石英基板等）8 1上，以第1遮光圖 案83係形成區域82及第2遮光圖案85係形成區域84之 方式’劃分成適宜之區域。 在第3實施形態中，該第1曝光61之曝光量，在被轉 印體1上之光阻膜13爲正型光阻的情況，係在單獨曝光時 ’在被轉印體1上之光阻膜Π顯像後產生規定量之薄膜的 殘膜的曝光量，接著，該第2曝光62之曝光量，係在單獨 L/ 曝光時’在該光阻膜13顯像後實質上不產生殘膜的曝光量 。該第1曝光61及第2曝光62之曝光波長係與第1實施 形態相同，可利用例如現有之液晶顯示器用曝光裝置所使 用的 i 線（365nm)〜g 線（436nm)。 又’在第3實施形態之情況，被轉印體1上之光阻膜 13顯像後實質上不產生之殘膜的區域，係藉由第1曝光61 及第2曝光62進行2次曝光，所以，第2曝光62之曝光 量，亦可與第丨曝光61之曝光量相同，係光阻膜13顯像 後產生規定量之薄膜的殘膜的曝光量。當以上述之曝光量 -26- 200910021 進行第1曝光61與第2曝光62之2次曝光時，其結果在 該區域被照射光阻膜13顯像後實質上不產生殘膜的曝光 量。 爲了依序交換曝光之2個遮光圖案83、85，可藉由使 被轉印體1移動於第丨曝光61與第2曝光62之間，或使 光罩8移動於第1曝光61與第2曝光62之間，以使第1 遮光圖案83與第2遮光圖案85對於被轉印體1依序成爲 相對地相同之位置。又，在使用第1遮光圖案83之第1曝 光61時’可由遮蔽板4等覆蓋第2遮光圖案85,而在使用 第2遮光圖案85之第2曝光62時，可由遮蔽板4等覆蓋 第1遮光圖案83。 如上述，藉由使用光罩8之第1遮光圖案83的第1曝 光61、及使用第2遮光圖案85之第2曝光62而對被轉印 體1上進行重疊曝光，對被轉印體1上之光阻膜13進行曝 光光線之照射，以形成顯像後實質上不產生殘膜的區域（第 3圖中由A的影線所示）、顯像後產生規定量之薄膜的殘膜 的區域（由B的影線所示）、及光阻膜實質上未被曝光而於 顯像後產生厚膜之殘膜的區域（由C的影線所示）。 於是，當對結束了第1曝光61及第2曝光62之被轉 印體1上的光阻膜13進行顯像時，如第3(c)圖所示，在被 轉印體1上形成包含厚膜之殘膜部位1 3a、薄膜之殘膜部位 13b及無殘膜（實質上不產生殘膜）的部位13c之膜厚呈階梯 狀而異（即具階梯差）之阻劑圖·案。 除上述外，第1曝光及第2曝光在分別單獨進行曝光 -27- 200910021 時，亦可在顯像後之光阻膜上產生規定量的膜厚之殘膜。 在此情況時，亦可利用第1曝光及第2曝光，並使光源之 光強度相同，藉由第1曝光與第2曝光之2次曝光，形成 光阻顯像後實質上不產生殘膜的區域。在此情況時，不需 要在第1曝光與第2曝光之間調整曝光量。此時之曝光量 ，例如在單獨地對光阻膜進行一次曝光時，可以顯像後之 光阻的殘膜値成爲未被曝光之部分的膜厚之55 %〜80%左 右的方式進行選擇。 以下，說明本發明之具體的實施例。 第4圖顯示使用第5(a)圖所示之第1遮光圖案於被轉 印體上進行第1曝光，接著，使用第5(b)圖所示之第2遮 光圖案同樣於被轉印體上之相同位置重疊地進行第2曝光 時，被照射於被轉印體上之曝光光線的光強度分布。此種 光強度分布係可由設定光罩之曝光條件的硬體模擬器所獲 得。 第5(a)圖所示之第1遮光圖案及第5(b)圖所示之第2 遮光圖案，均在相同之透明基板（石英基板）上，由鉻（Cr) 遮光膜形成規定之圖案狀。藉由使用第5 (a)圖之第1遮光 圖案的第1曝光、及使用第5(b)圖之第2遮光圖案第2曝 光的重疊曝光，如第5 (c)圖所示，對被轉印體1上進行曝 光光線之照射，形成光阻實質上未被曝光的區域9 c、顯像 後產生規定量之殘膜的區域9b、及顯像後實質上不產生殘 膜的區域9a。又，在本實施例中，該第1曝光及第2曝光 均係設爲曝光光源波長爲 365nm、光學系之數値孔隙 -28- 200910021 ΝΑ:0.143、σ(同調性）：〇.75、投影倍率xl，第1曝光及第2 曝光之曝光量，係在分別單獨地對被轉印體進行曝光時， 被轉印體上之光阻顯像後產生規定量的殘膜（設實質上未 被曝光之區域的光阻顯像後的殘膜量爲100%時成爲約50% 的殘膜量）的曝光量。 在以上的條件之下，將設第5(b)圖所示之第2遮光圖 案的Cr遮光膜所形成之遮光部的圖案寬度爲4/zm(固定） ，並設第5 (a)圖所示之第1遮光圖案的相同遮光部的圖案 寬度爲例如1 0 V m之情況，作爲實施例C 1 0 0。此情況時之 第1遮光圖案的遮光部與透光部的境界位置X、與第2遮光 圖案的遮光部與透光部的境界位置y間之相隔距離（寬度 )W係3 // m，在被轉印體上形成對應於其區域9b之殘膜區 域。 第4圖綜合地顯示將第1遮光圖案之遮光部的圖案寬 度在5//m(實施例C050)〜實施例C150)之範圍內作 變更’以進行第1曝光及第2曝光之重疊曝光時之，照射 於被轉印體上之曝光光線的光強度分布。第4圖之橫軸的 座標係對應於第5(c)圖之範圍R。 從第4圖之結果可知，根據本發明之圖案形成方法， 可在被轉印體上形成具有1/zm程度之明確的平坦部之寬 度的阻劑殘膜。尤其是可進行較適合於該區域9b之圖案寬 度W爲2 y m(實施例C080)以上之情況的微細圖案的形成。 其次，說明與本發明對應之比較例。 本比較例顯示使用習知之灰階遮罩，在被轉印體上進 -29- 200910021 行圖案轉印的情況。具體而言，如第6(b)圖所示，在透明 基板（石英基板）600上，使用具有由Cr遮光膜構成之遮光 部610、透光部（露出透明基板）、及由MoSi半透光膜構成 之半透光部（在設透光部之曝光光線透光率爲100時，將透 光率減低約50%) 620的灰階遮罩，並使用液晶顯示器用曝 光裝置，以一次曝光在被轉印體上進行圖案之轉印。又， 曝光裝置之光源波長係與該實施例相同，爲365nm。 第6(a)圖顯示將由該MoSi半透光膜構成之半透光部 620的圖案寬度HT，在0/zm〜6#m之範圍內作變更，而 對被轉印體上進行圖案轉印時，照射於被轉印體上之曝光 光線的光強度分布。 從第6圖之結果可知，若欲以半透光膜來控制被轉印 體上之阻劑殘膜時，當將圖案寬度HT設爲3/zm程度時， 終於能在被轉印體上形成爲1 // m程度之階梯差部分，但幾 乎沒有平坦部。因此，在比較例之圖案形成方法中，要進 行寬度控制非常難’且要精度良好地在被轉印體上形成具 有1 V m或其以下之明確的平坦部的阻劑殘膜，亦相當地困 難。 [第4實施形態] 第8圖爲顯不本發明之圖案形成方法的第4實施形態 之剖視圖。第4實施形態係申請專利範圍第1 6項記載之發 明的圖案形成方法。 第4實施形態之圖案形成方法，如第8圖所示，使用 形成於光罩100上之遮光圖案1〇2,在被轉印體1上進行第 -30- 200910021 1曝光1 1 1，然後，將曝光光線之聚焦條件與第1曝光1 1 1 進行變更，於被轉印體上，使用形成於光罩100上之遮光 圖案102進行第2曝光112。亦即，藉由第1曝光111與第 2曝光112之曝光光線的聚焦條件之變更，在被轉印體1 上進行曝光光線之照射量會依部位而異的曝光。 另外，光罩1 00之遮光圖案1 02，係在透明基板（例如 ，石英基板等）1〇1上形成規定之圖案狀。 在第4實施形態中，該第1曝光1 1 1之曝光量，例如 在被轉印體1上之光阻膜13爲正型光阻的情況，係設定爲 在單獨曝光時，於被轉印體1上之光阻膜13顯像後產生規 定量之薄膜的殘膜的曝光量。接著之該第2曝光112,係變 更爲與該第1曝光1 1 1不同之聚焦條件。例如，在使焦點 位置與第1曝光111不同而偏移一規定量之偏焦狀態下進 行第2曝光1 1 2。在此情況時，偏焦量雖可適宜決定，但例 如亦可考慮形成於被轉印體1上之厚膜的殘膜區域與形成 於其周圍之薄膜的殘膜區域之所需圖案的大小尺寸等來決 定。又，該第1曝光111及第2曝光112之曝光波長，係 與第1實施形態相同，可利用例如現有之液晶顯示器用曝 光裝置所使用的i線（365nm)〜g線（436nm)。 如上述，藉由使用光罩100之遮光圖案102的第1曝 光1 1 1 ’及接著將曝光光線之聚焦條件與第1曝光1 1 1作變 更’使用該遮光圖案102之第2曝光112而對被轉印體1 上進行重疊曝光。藉此，對被轉印體1上之光阻膜13進行 曝光光線之照射，以形成顯像後實質上不產生殘膜的區域（ -31 - 200910021 第8圖中由A的影線所示）、顯像後產生規定量之薄膜的殘 膜的區域（由B的影線所示）、及光阻膜實質上未被曝光而 於顯像後產生厚膜之殘膜的區域（由C的影線所示）。 於是，當對結束了第1曝光111及第2曝光112之被 轉印體1上的光阻膜13進行顯像時，如第8(c)圖所示，在 被轉印體1上形成包含厚膜之殘膜部位1 3a、形成於該厚膜 之殘膜部位13a周圍的薄膜之殘膜部位13b及無殘膜（實質 f .. 上不產生殘膜）的部位1 3 c之膜厚呈階梯狀而異（即，具階梯 \ 差）之阻劑圖案。亦即，作爲此時所形成之阻劑圖案，可作 成在對被轉印體上之光阻進行顯像後，具有將厚膜部位 1 3 a(第1阻劑殘膜値部分），由殘膜値比其小之薄膜部位 13b(第2阻劑殘膜値部分）對稱地挾持之部分。 根據以上之第4實施形態的圖案形成方法，例如在厚 膜之殘膜區域的兩端或周圍形成具有薄膜之殘膜區域的轉 印圖案的情況，可避免使用以往之灰階遮罩的轉印方法時 (, 作爲其課題之因對位偏差而成爲非對稱圖案的情況產生。 另外，即使不使用圖像解析度非常高、大規模且高價的曝 光裝置，仍可容易地形成圖案。另外，在第4實施形態中 ，在進行多次曝光時，因光罩上之遮光圖案與轉印有該遮 光圖案的被轉印體上的相對位置不變，所以可抑制對位偏 差，發揮使用之曝光裝置所具有的對位精度，可精度良好 且容易地形成所需之阻劑圖案。 [第5實施形態] 第9圖爲顯示本發明之圖案形成方法的第5實施形態 -32- 200910021 之剖視圖。桌5實施形態係申請專利範圍第20項記載之發 明的圖案形成方法。 第5實施形態之圖案形成方法，如第9圖所示，將形 成於光罩100上之遮光圖案102配置於被轉印體}上的第1 位置（第9(a)圖），並在被轉印體1上進行第1曝光ηι，然 後’使該遮光圖案1 02對於被轉印體1相對地移動規定距 離，配置於被轉印體1上的第2位置（第9(b)圖），並在被轉 印體1上進行第2曝光113。即，在第1曝光ill與第2曝 光1 1 3之間’改變遮光圖案1 〇2與被轉印體1之相對位置 ’進行第1曝光111與第2曝光113之重疊曝光，在被轉 印體1上進行曝光光線之照射量會依部位而異的曝光。 又’光罩100之該遮光圖案102，係在透明基板（例如 ，石英基板等）101上形成規定之圖案狀。 在第5實施形態中，該第1曝光ill及第2曝光113 之曝光量’例如在被轉印體1上之光阻膜13爲正型光阻的 情況，係設定爲在單獨曝光時，在被轉印體1上之光阻膜 13顯像後產生規定量之薄膜的殘膜的曝光量。第1曝光in 及第2曝光113之曝光量，可爲相等之曝光量，亦可爲相 異之曝光量。在改變了第1曝光111及第2曝光113之曝 光量的情況，例如，可在被轉印體1上，在兩端分別改變 形成於厚膜之殘膜區域兩端的薄膜的殘膜區域之膜厚。又 ，該第1曝光111及第2曝光113之曝光波長，係與第1 實施形態相同，可利用例如現有之液晶顯示器用曝光裝置 所使用的i線（365nm)〜g線（436nm)。 -33- 200910021 另外，雖在第1曝光111及第2曝光113之間改變遮 光圖案102與被轉印體1之相對位置，但在此情況，可使 光罩1 〇〇朝規定方向移動，或可使被轉印體丨朝相反方向 移動。又，亦可使兩者朝互爲相反之方向移動。無論採用 哪一種方法，此時之對位可藉由搭載於曝光裝置上的定位 機構而精度良好地加以維持。另外，此時之相對移動量可 適宜決定，但亦可考慮例如形成於被轉印體1上之厚膜的 殘膜區域與形成於其兩端之薄膜的殘膜區域之所需圖案的 大小尺寸等來決定。 如上述，藉由使用光罩100之遮光圖案102的第1曝 光111，及接著在改變該遮光圖案1 02對於被轉印體1之相 對位置、使用該遮光圖案102的第2曝光113而對被轉印 體1上進行重疊曝光。藉此，對被轉印體1上之光阻膜1 3 進行曝光光線之照射，以形成顯像後實質上不產生殘膜的 區域（第9圖中由A的影線所示）、顯像後產生規定量之薄 膜的殘膜的區域（由B的影線所示）、及光阻膜實質上未被 曝光而於顯像後產生厚膜之殘膜的區域（由C的影線所示） 〇 於是，當對結束了第1曝光111及第2曝光113之被 轉印體1上的光阻膜13進行顯像時，如第9(c)圖所示，在 被轉印體1上形成包含厚膜之殘膜部位13a、形成於該厚膜 之殘膜部位13a兩端的薄膜之殘膜部位13b及無殘膜（實質 上不產生殘膜）的部位1 3c之膜厚呈階梯狀而異（即，具階梯 差）之阻劑圖案。 -34- 200910021 亦即，作爲此時所形成之阻劑圖案，可作成在對被轉 印體上之光阻進行顯像後，具有將厚膜部位1 3 a，由殘膜値 比其小之薄膜部位1 3b對稱地挾持之部分。 根據以上之第5實施形態的圖案形成方法，例如在厚 膜之殘膜區域的兩端或周圍形成具有薄膜之殘膜區域的轉 印圖案的情況，可避免使用以往之灰階遮罩的轉印方法時 作爲其課題之因對位偏差而成爲非對稱圖案的情況產生。 另外，即使不使用圖像解析度非常高、大規模且高價的曝 光裝置，仍可容易地形成圖案。另外，在第5實施形態中 ’雖在第1曝光及第2曝光之間需要進行被轉印體與光罩 之相對移動，但因其對位可在曝光裝置上進行，因此可高 精度地進行定位。可避免使用多個光罩之情況必然會產生 的對位偏差的問題。其結果，亦可容易且精度良好地形成 在被轉印體1上含有例如1 # m以下之微細圖案寬度的阻劑 殘膜的阻劑圖案。 [第6實施形態] 第10圖爲說明本發明之圖案形成方法的第6實施形態 的圖，爲顯示光罩與被轉印體之位置關係的俯視圖。但爲 了方便起見，有關光罩200,將其位置顯示成偏向圖中上方 。第6實施形態係申請專利範圍第2 4項記載之發明的圖案 形成方法。 第6實施形態之圖案形成方法，如第1 〇圖所示，將光 罩200配置於被轉印體·1上方的第1位置（第i〇(a)圖），並 在被轉印體1上同時進行光罩200之第1圖案210與第2 -35- 200910021 圖案220的曝光（第1曝光）。然後，使該光罩200對於被轉 印體1相對地移動一個面板之距離（在此爲一個圖案單位之 距離，以下相同），配置於被轉印體1上方的第2位置（第 10(b)圖），並在被轉印體1上進行該第1圖案210及第2圖 案220之同時曝光（第2曝光）。另外，在第6實施形態中， 再使該光罩200對於被轉印體1相對地移動一個面板之距 離（第10(c)圖），在被轉印體1上進行該第1圖案210及第 ( 2圖案220之同時曝光，再使該光罩200對於被轉印體1 相對地移動一個面板之距離（第10(d)圖），在被轉印體1上 進行該第1圖案210及第2圖案2 20之同時曝光，在被轉 印體1上形成3面附著之轉印圖案。在此，以光罩200之 中沒有形成圖案之部份係遮光部爲較佳。 如上述，一面使形成有第1圖案210及第2圖案220 之光罩200對於被轉印體1以每一次一個面板之距離進行 相對移動，一面在被轉印體1上重複進行第1圖案210及 L 第2圖案220之同時曝光，藉此，藉由該第1曝光與第2 曝光之重疊曝光，在被轉印體1上進行曝光光線之照射量 會依部位而異的曝光，以形成多灰階之轉印圖案。 又，光罩200之該第1圖案210及第2圖案2 20’均係 在透明基板（例如，石英基板等）上，以由鉻（CO等所構成之 遮光膜形成規定之相異圖案狀的遮光圖案。該第1圖案210 係由遮光部21 1及透光部21 2所構成，該第2圖案220係 由遮光部221及透光部222所構成。另外，該第1圖案210 及第2圖案220係相鄰地形成於透明基板上。 -36- 200910021 在第6實施形態中，該第1曝光（第10 (a)圖中的第1 次的曝光）及第2曝光（第10(b)圖中的第2次的曝光）係相等 之曝光量。另外，其後之第10(c)圖中的第3次的曝光及第 10(d)圖中的第4次的曝光，亦係相等之曝光量。於是，一 個轉印圖案係藉由第1圖案210及第2圖案2 20之重疊、 即例如該第1曝光及第2曝光之重疊曝光所形成。例如， 在被轉印體1上之光阻膜1 3爲正型光阻的情況，該第1曝 光及第2曝光之曝光量，係分別設定爲在單獨曝光時，於 被轉印體1上之光阻膜1 3顯像後產生規定量之薄膜的殘膜 的曝光量，且是在第1曝光及第2曝光之雙重曝光（重疊曝 光）的區域，於被轉印體1上之光阻膜13顯像後實質上不 產生殘膜的曝光量。又，該曝光時之曝光波長，係與第1 實施形態相同，可利用例如現有之液晶顯示器用曝光裝置 所使用的i線（3 6 5 n m)〜g線（4 3 6 n m)。 另外，在第6實施形態中，例如，雖在該第1曝光及 第2曝光之間，將光罩200與被轉印體1之面板的相對位 置每一次變更一個面板之距離，但在此情況，亦可使光罩 20 0朝規定方向移動，並使被轉印體1朝相反方向移動。此 爲在第10(a)圖之步驟與第10(b)圖的步驟之間，及其後之 第10(b)圖與第10(c)圖的步驟之間，第l〇(c)圖與第i〇(d) 圖的步驟之間’亦相同。無論採用哪一種方法，此時之對 位可藉由搭載於曝光裝置上的定位機構而精度良好地加以 維持。另外，雖每進行一次曝光之相對移動量係一個面板 之距離，但在第6實施形態中，在光罩200上，該第1圖 -37- 200910021 案210及第2圖案220係分別以相同之區域寬度相鄰地形 成，所以，例如，以將第1圖案210重疊於被轉印體1上 之第2圖案2 20已曝光的區域上進行曝光的方式，將一個 面板之距離設定爲第1圖案210(或第2圖案220)的區域寬 度。 在第10(a)圖所示光罩200與被轉印體1之面板的配置 中，當同時對光罩200之第1圖案210及第2圖案2 20進 行曝光時，在被轉印體1上之光阻膜13上，在圖案形成區 域la對該第1圖案210曝光，在相鄰之圖案形成區域lb 對該第2圖案220曝光。光阻膜13從該第1次之曝光所接 收的曝光量，係光阻膜13顯像後產生規定量之薄膜的殘膜 的曝光量。然後，使該光罩200對於被轉印體1相對地移 動一個面板之距離，在第10(b)圖所示光罩200與被轉印體 1之配置中，當再次於被轉印體1上同時對光罩200之第1 圖案210及第2圖案2 20進行曝光時，將第1圖案210重 疊於已先在圖案形成區域lb被曝光之第2圖案2 20上進行 曝光。另外，在相鄰之圖案形成區域lc對該第2圖案220 曝光。此第2次之曝光的曝光量，亦係光阻膜13顯像後產 生規定量之薄膜的殘膜的曝光量，但在圖案形成區域lb， 在第1次之曝光及第2次之曝光之雙重曝光的區域，照射 光阻膜1 3顯像後實質上不產生殘膜的曝光量。 接著，再使該光罩200對於被轉印體1相對地移動一 個面板之距離，在第10(c)圖所示光罩200與被轉印體1之 配置中’再次於被轉印體1上同時對光罩200之第1圖案 -38- 200910021 210及第2圖案220進行曝光。於是，將第 於已先在圖案形成區域lc被曝光之第2圖 光，並在相鄰之圖案形成區域Id對該第2 接著，再使該光罩200對於被轉印體1相 板之距離，在第10(d)圖所示光罩200與被 中，再次於被轉印體1上同時對光罩200 及第2圖案220進行曝光。於是，將第1 已先在圖案形成區域Id被曝光之第2圖案 ，並在相鄰之圖案形成區域le對該第2圚 如上述，一面使形成有第1圖案210 之光罩200對於被轉印體1每一次相對地 距離，一面在被轉印體1上重複同時進行 第2圖案220之曝光。藉此，在被轉印體 成區域1 b、1 c、1 d，對光阻膜1 3照射曝光 第2圖案220及第1圖案210之重疊曝光 實質上不產生殘膜的區域（第10圖中由A 、顯像後產生規定量之薄膜的殘膜的區域 、及光阻膜實質上未被曝光而於顯像後產 區域（由C圖形（白）所示）。 於是，當對結束了第1圖案210及第 時重複曝光的被轉印體1上的光阻膜1 3翅 轉印體1上形成有包含厚膜之殘膜部位、 膜之殘膜部位兩端的薄膜之殘膜部位及_ 產生殘膜）的部位之膜厚呈階梯狀而異（即 1圖案2 1 0重疊 案220上進行曝 圖案220曝光。 對地移動一個面 轉印體1之配置 之第1圖案210 圖案210重疊於 220上進行曝光 丨案2 2 0曝光。 及第2圖案220 移動一個面板之 第1圖案210及 1上之各圖案形 光線，並藉由該 ，以形成顯像後 圖形（全黑）所示） (由B圖形所示） 生厚膜之殘膜的 2圖案220之同 I行顯像時，在被 例如形成於該厚 S殘膜（實質上不 ，具階梯差）之多 -39- 200910021 灰階的阻劑圖案。 根據以上之第6實施形態的圖案形成方法，例如在被 轉印體1上藉由多面附著形成轉印圖案的情況，一面使形 成有第1圖案及第2圖案之光罩對於被轉印體每一次相對 地移動一個面板之距離’一面在被轉印體上重複進行第1 圖案及第2圖案之同時曝光。因此，在進行多次之曝光時 ，可縮短各曝光間之被轉印體與光罩的相對移動時之移動 距離，此時之對位，可藉由搭載於曝光裝置上的定位機構 而精度良好地加以維持，所以，可以高精度進行定位。另 外，在曝光時不需要藉由遮蔽板等來遮蔽第1圖案及第2 圖案之任一方’或解除遮蔽。因此，可精度良好地在被轉 印體上形成所需膜厚呈階梯狀而異之多灰階的阻劑圖案。 另外’即使不使用圖像解析度高、大規模且高價的曝光裝 置，仍可精度良好地在被轉印體上形成例如含1 # m左右的 微細寬度之阻劑殘膜的多灰階的阻劑圖案。 [第7實施形態] 第1 1圖爲說明本發明之圖案形成方法的第7實施形態 的圖’爲顯示光罩與被轉印體之位置關係的俯視圖。第7 實施形態亦係申請專利範圍第24項記載之發明的圖案形 成方法。 第7實施形態之圖案形成方法，如第丨丨圖所示，將光 罩200配置於被轉印體}上方的規定位置（第11(&)圖），並 在被轉印體1上同時進行光罩2〇〇之第1圖案21〇與第2 圖案230的曝光。然後，使該光罩2〇〇對於被轉印體丄相 -40- 200910021 對地移動一個面板之距離（在此爲一個圖案單位之 下相同）（第11(b)圖），並在被轉印體1上進行該！ 210及第2圖案230之同時曝光，再使該光罩200 印體1相對地移動一個面板之距離（第u(c)圖）， 體1上進行該第1圖案210及第2圖案230之同 再使該光罩200對於被轉印體1相對地移動一個 離（第11(d)圖），在被轉印體1上進行該第1圖案 2圖案230之同時曝光，在被轉印體1上形成3面 印圖案。 亦即，一面使形成有第1圖案210及第2圖 光罩200對於被轉印體1各相對地移動一個面板 一面在被轉印體1上重複進行第1圖案210及第2 之同時曝光，藉此，藉由該第1圖案210及第2 之重疊曝光，在被轉印體1上進行曝光光線之照 部位而異的曝光，以形成多灰階之轉印圖案。 但是，在第7實施形態中，光罩200之該第1 係由遮光部2 1 1及透光部2 1 2所構成的遮光圖案， 圖案23 0係由遮光部231及將透過之曝光量減低 半透光部232所構成。該半透光部232係由在將 212之曝光光線透光率設爲100%時，使透光率減-至80 %之程度的半透光性之半透光膜所形成（在此 如設爲20 %的透光率）。另外，該第1圖案210及 230係分別以相同區域寬度而相鄰地形成於透明3 在第7實施形態中，各曝光時之曝光量相等 距離，以 春1圖案 對於被轉 在被轉印 時曝光。 面板之距 210及第 附著之轉 案23 0之 之距離， 圖案230 圖案230 射量會依 圖案210 但該第2 規定量的 該透光部 低例如20 例中，例 第2圖案 S板上。 。另外， -41 - 200910021 其一次之曝光量，在被轉印體1上之光阻膜13爲正型光阻 的情況，係在單獨曝光時，於光阻膜1 3顯像後不會產生殘 膜的曝光量。此時，在由該第1圖案210受到曝光之區域 ，被照射此光阻膜13顯像後不會產生殘膜的曝光量，在藉 由該第1圖案210及第2圖案230之重疊曝光進行雙重曝 光的區域，因曝光量變得更大，所以，於光阻膜13顯像後 實質上不會產生殘膜。另一方面，僅由第2圖案230且透 過該半透光部23 2受到曝光的區域，係響應該半透光部232 所使用之半透光膜的透過率20%而於光阻膜13產生殘膜。 該曝光時之曝光波長，係與第1實施形態相同，可利用例 如現有之液晶顯示器用曝光裝置所使用的1線（365nm)〜g 線（436nm)。又，該第2圖案230係具有將透過之曝光量減 低規定量的半透光部232，所以’在同時曝光該第1圖案 210及第2圖案230時，在被轉印體1上，第2圖案230係 由比第1圖案210之曝光量減低規定量的曝光量所照射。 另外，在第7實施形態中，雖每進行一次曝光之相對 移動量係一個面板之距離，但光罩200係於透明基板上使 該第1圖案210及第2圖案230分別以相同之區域寬度相 鄰地形成，所以’ 一個面板之距離係設定爲第1圖案2 1 0 ( 或第2圖案23 0)的區域寬度。 在第1 1(a)圖所示光罩200與被轉印體1之面板的配置 中，當同時對光罩200之第1圖案210及第2圖案230進 行曝光時，在被轉印體1上之光阻膜丨3上’在圖案形成區 域la對該第1圖案210曝光’在相鄰之圖案形成區域lb -42- 200910021 對該第2圖案230曝光。然後，使該光罩200對於被轉印 體1相對地移動一個面板之距離，在第1 1 (b)圖所示光罩200 與被轉印體1之配置中，當再次於被轉印體1上同時對光 罩200之第1圖案210及第2圖案230進行曝光時，將第1 圖案210重疊於已先在圖案形成區域ib被曝光之第2圖案 230上進行曝光。另外，在相鄰之圖案形成區域lc對該第 2圖案230曝光。 接著’再使該光罩200對於被轉印體1相對地移動一 個面板之距離’在第1 1(c)圖所示光罩200與被轉印體1之 配置中’當再次於被轉印體1上同時對光罩2 〇〇之第1圖 案210及第2圖案230進行曝光時，將第1圖案210重疊 於已先在圖案形成區域lc被曝光之第2圖案230上進行曝 光’並在相鄰之圖案形成區域Id對該第2圖案230曝光。 接著’再使該光罩200對於被轉印體1相對地移動一個面 板之距離’在第11(d)圖所示光罩200與被轉印體1之配置 中’當再次於被轉印體1上同時對光罩200之第1圖案2 ! 〇 及第2圖案230進行曝光時，將第1圖案21〇重疊於已先 在圖案形成區域Id被曝光之第2圖案230上進行曝光，並 在相鄰之圖案形成區域le對該第2圖案230曝光。 如上述’一面使形成有第1圖案210及第2圖案230 之光罩200對於被轉印體1每一次相對地移動一個面板之 距離，一面在被轉印體上重複同時進行第1圖案21〇及第2 圖案230之曝光。藉此’在被轉印體1上之各圖案形成區 域1 b、1 c、1 d，對光阻膜丨3照射曝光光線，並藉由該第2 -43- 200910021 圖案23 0及該第1圖案210之重疊曝光，以形成顯像 質上不產生殘膜的區域（第11圖中由A圖形（全黑）所3 顯像後產生規定量之薄膜的殘膜的區域（由B圖形所$ 及光阻膜實質上未被曝光而於顯像後產生厚膜之殘膜 域（由C圖形（白）所示）。亦即，在藉由第2圖案230及 圖案210之重疊曝光而被雙重曝光的區域、及僅由第 案210被曝光之區域’被照射光阻膜13顯像後實質上 產生殘膜的曝光量。另外，僅由第2圖案230被曝光 域，對於光阻膜1 3係由比第1圖案2 1 0減低規定量的 量進行照射’所以’其結果形成產生相異之膜厚的殘 區域。藉此，藉由適宜地調節第2圖案230之半透光部 的透光率及一次之曝光量，例如在設光阻膜1 3顯像後 上不產生殘膜的曝光量爲100%，並以此曝光量依序重 曝光時，可形成規定量之阻劑殘膜的殘膜區域。 第7實施形態與第6實施形態比較，具有以下之 。在第6實施形態中，始終以相同量之曝光量對第i 及第2圖案進行曝光’且藉由2次曝光形成阻劑殘膜 上成爲零的部分。在此情況時，在設光阻膜1 3顯像後 上不產生殘膜的曝光量爲100%時，產生阻劑殘膜之部 曝光量，被限制爲5 0 %左右以上。因此，第6實施形 在欲藉由比5 0 %左右還小之曝光量獲得阻劑殘膜値的 ，其自由度較小。 相對於此，在第7實施形態中，能藉由選擇半透 所用之半透光膜的透光率，形成由50 %之曝光量所產 後實 ^ ) ' ^ ) ' 的區 第1 1圖 不會 之區 曝光 膜的 ；232 實質 複該 優點 圖案 實質 實質 分的 態係 情況 光部 生之 -44- 200910021 阻劑殘膜。 [第8實施形態] 第1 2圖爲說明本發明之圖案形成方法的第8實施形態 的圖，爲顯示光罩與被轉印體之位置關係的俯視圖。第8 貫施形態亦係申請專利範圍第24項記載之發明的圖案形 成方法。 在第8實施形態之圖案形成方法，如第1 2圖所示，亦 將光罩200配置於被轉印體1上方的規定位置（第i2(a)圖） ’並在被轉印體1上同時進行光罩200之第1圖案210與 第2圖案230的曝光。然後，使該光罩200對於被轉印體1 相對地移動一個面板之距離（在此爲一個圖案單位之距離 ，以下相同）（第12(b)圖），並在被轉印體1上進行該第1圖 案210及第2圖案230之同時曝光，再使該光罩200對於 被轉印體1相對地移動一個面板之距離（第12(c)圖），在被 轉印體1上進行該第1圖案210及第2圖案230之同時曝 光。再使該光罩200對於被轉印體1相對地移動一個面板 之距離（第12(d)圖），在被轉印體1上進行該第1圖案210 及第2圖案23 0之同時曝光，在被轉印體1上形成3面附 著之轉印圖案。 亦即，一面使形成有第1圖案210及第2圖案230之 光罩200對於被轉印體1每一次相對地移動一個面板之距 離，一面在被轉印體1上重複進行第1圖案210及第2圖 案23 0之同時曝光，藉此，藉由該第1圖案及第2圖案之 重疊曝光，在被轉印體1上進行曝光光線之照射量會依部 -45- 200910021 位而異的曝光，以形成多灰階之轉印圖案。 只是，在第8實施形態中，光罩200之該第1圖案210 係由遮光部211及透光部212所構成的遮光圖案，但該第2 圖案230係由遮光部231及將透過之曝光量減低規定量的 半透光部232所構成。該半透光部232係由在將該透光部 212之曝光光線透光率設爲100%時，使透光率減低例如20 至80%之程度的半透光性之半透光膜所形成（例如設爲50%) 。另外，該第1圖案210及第2圖案230係分別以相同區 域寬度而相鄰地形成於透明基板上。 在第8實施形態中，各曝光時之曝光量相等。另外， 其一次之曝光量，在被轉印體1上之光阻膜13爲正型光阻 的情況，係於光阻膜1 3顯像後產生規定量之薄膜的殘膜的 曝光量，且在藉由該第1圖案210及第2圖案230之重疊 曝光進行雙重曝光的區域，被設定爲於光阻膜13顯像後實 質上不會產生殘膜的曝光量。例如，在將於光阻膜13顯像 後實質上不會產生殘膜的曝光量設爲100%時，在此設爲 8 0 %之曝光量。該曝光時之曝光波長，係與第1實施形態相 同’可利用例如現有之液晶顯示器用曝光裝置所使用的i 線（36511111)〜2線（43611111)。又’該第2圖案230係具有將透 過之曝光量減低規定量的半透光部232，所以，在同時曝光 該第1圖案210及第2圖案230時，在被轉印體1上，第2 圖案230係由比第1圖案210之曝光量減低規定量的曝光 量所照射。 另外’在第8實施形態中，雖每進行一次曝光之相對 -46- 200910021 移動量係一個面板之距離，但光罩200係於透明 該第1圖案210及第2圖案230分別以相同之區 鄰地形成，所以，一個面板份數係設定爲第1圖 第2圖案230)的區域寬度。 在第12(a)圖所示光罩200與被轉印體1之面 中，當同時對光罩200之第1圖案210及第2圖 行曝光時，在被轉印體1上之光阻膜1 3上，在圖 域la對該第1圖案210曝光，在相鄰之圖案形丨 對該第2圖案230曝光。然後，使該光罩200對 體1相對地移動一個面板之距離，在第12(b)圖所汚 與被轉印體1之配置中，當再次於被轉印體1上 罩200之第1圖案210及第2圖案230進行曝光日 圖案210重疊於已先在圖案形成區域lb被曝光之 23 0上進行曝光。另外，在相鄰之圖案形成區域 2圖案230曝光。 接著，再使該光罩200對於被轉印體1相對 個面板之距離，在第12(c)圖所示光罩200與被轉 配置中，當再次於被轉印體1上同時對光罩20 0 案210及第2圖案230進行曝光時，將第1圖案 於已先在圖案形成區域lc被曝光之第2圖案230 光，並在相鄰之圖案形成區域Id對第2圖案230 著，再使該光罩200對於被轉印體1相對地移動 之距離，在第12(d)圖所示光罩200與被轉印體1 ，當再次於被轉印體1上同時對光罩200之第1 基板上使 域寬度相 案210(或 板的配置 案230進 案形成區 友區域1 b 於被轉印 ^光罩200 同時對光 寺，將第1 第2圖案 1 c對該第 地移動一 印體1之 之第1圖 210重疊 上進行曝 曝光。接 —個面板 之配置中 圖案210 -47- 200910021 及第2圖案230進行曝光時，將第1圖案2i〇重疊於已先 在圖案形成區域Id被曝光之第2圖案230上進行曝光，並 在相鄰之圖案形成區域le對第2圖案230曝光。 如上述’一面使形成有第1圖案21〇及第2圖案230 之光罩200對於被轉印體1每一次相對地移動一個面板之 距離’ 一面在被轉印體上重複同時進行第1圖案210及第2 圖案230之曝光。藉此’在被轉印體1上之各圖案形成區 域1 b、1 c、1 d，對光阻膜13照射曝光光線，並藉由該第2 圖案230及第1圖案210之重疊曝光，以形成顯像後實質 上不產生殘膜的區域（第12圖中由A圖形（全黑）所示）、顯 像後產生規定量之薄膜的殘膜的2個區域（分別由Bi、B2 圖形所示）、及光阻膜實質上未被曝光而於顯像後產生厚膜 之殘膜的區域（由C圖形（白）所示）。亦即，在藉由第2圖案 230及第1圖案210之重疊曝光而被雙重曝光的區域，被照 射光阻膜13顯像後實質上不會產生殘膜的曝光量。另外， 在由第1圖案210或第2圖案230之任一方被曝光之區域 ，均照射光阻膜1 3顯像後產生規定量之薄膜的殘膜之曝光 量，但第2圖案23 0係對於光阻膜13而由比第1圖案210 減低規定量的曝光量進行照射，所以，其結果形成產生相 異之膜厚的殘膜的區域。藉此，藉由適宜地調節第2圖案 230之半透光部232的透光率及一次之曝光量，例如在設該 光阻膜13顯像後實質上不產生殘膜的曝光量爲100%時， 可形成由50%以上、未滿100%的曝光量所照射之區域、及 由未滿50%之曝光量所照射之區域的2個相異膜厚之殘膜 -48- 200910021 區域。 於是，當對結束了第1圖案210及第2圖案230 重複曝光的被轉印體1上的光阻膜1 3進行顯像時， 印體1上形成有包含厚膜之殘膜部位、膜厚相異之2 之殘膜部位及無殘膜（實質上不產生殘膜）的部位在內 呈階梯狀而異（即，具階梯差）之多灰階的阻劑圖案。 又，本發明並不限定於上述實施形態。例如， 圖中，藉由在第1圖案210亦形成使用半透光膜的 部，可進一步形成光阻之殘膜値相異的阻劑圖案。 根據以上之實施形態的圖案形成方法，例如在 體上藉由多面附著形成轉印圖案的情況，一面使形 1圖案及第2圖案之光罩對於被轉印體每一次相對 一個面板之距離，一面在被轉印體上重複進行第1 第2圖案之同時曝光。因此，在進行多次之曝光時 短各曝光間之被轉印體與光罩的相對移動時之移動 此時之對位，可藉由搭載於曝光裝置上的定位機構 度地加以維持，所以，可以高精度進行定位。另外 光時不需要藉由遮蔽板等來遮蔽第1圖案及第2圖 一方，或解除遮蔽之操作。因此，可精度良好地在 體上形成所需膜厚呈階梯狀而異之多灰階（尤其是 間的2個灰階之4個灰階）的阻劑圖案。另外，即使 圖像解析度高、大規模且高價的曝光裝置，仍可精 地在被轉印體上形成例如含1 // m左右的微細寬度 殘膜的多灰階的阻劑圖案。 之同時 在被轉 個薄膜 之膜厚 在第12 半透光 被轉印 成有第 地移動 圖案及 ，可縮 距離， 而高精 ，在曝 案之任 被轉印 包含中 不使用 度良好 之阻劑 -49- 200910021 【圖式簡單說明】 第l(a)、（b)、（c)圖爲依步驟順序顯示本發明之第丨實 施形態的圖案形成方法之剖視圖。 第2圖爲依步驟順序顯示本發明之第2實施形態的圖 案形成方法之剖視圖。 第3圖爲依步驟順序顯示本發明之第3實施形態的圖 案形成方法之剖視圖。 第4圖爲顯示根據本發明而照射於被轉印體上之曝光 光線的光強度分布之光強度分布圖。 第5圖爲本發明之光罩的遮光圖案之說明圖。 第6(a)圖爲顯示比較例之結果的光強度分布圖，第6(b) 圖爲用於比較例之灰階遮罩的俯視圖。 第7圖爲說明使用灰階遮罩之圖案轉印方法用的剖視 圖。 第8圖爲依步驟順序顯示本發明之第4實施形態的圖 案形成方法之剖視圖。 第9圖爲依步驟順序顯示本發明之第5實施形態的圖 案形成方法之剖視圖。 第10圖爲顯示說明本發明之第6實施形態的圖案形成 方法用之光罩與被轉印體的位置關係之剖視圖。 第11圖爲顯示說明本發明之第7實施形態的圖案形成 方法用之光罩與被轉印體的位置關係之剖視圖。 第12圖爲顯示說明本發明之第8實施形態的圖案形成 方法用之光罩與被轉印體的位置關係之剖視圖。 -50- 200910021 【主要元件符號說明】 1 被 轉 印 體 4 遮 蔽 板 1 a , 1 b , 1 c ,1d,le 圖 案 形 成 丨品. 域 5,7,： B,100,200 光 罩 9 a, 9 b , 9 c 區 域 11 基 板 1 2A, 1 2B 積 層 膜 13 光 阻 膜 13a 含 厚 膜 之 殘 膜 部位 13b 薄 膜 之 殘 膜 部 位 13c 4τττ. 姚 殘 膜 的 部 位 20 灰 階 遮 罩 21、 21 1 、221 ' 231 遮 光 部 22 ' 2 12 ' 222 透 光 部 23、 232 半 透 光 部 24 透 明 基 板 25 遮 光 膜 26 半 透 光 膜 30 被 轉 印 體 3 1 基 板 32A ,32B 膜 33 阻 劑 圖 案 5 1、 71、 8 1 透 明 基 板 52、 54 區 域 -51 - 200910021 53 ' 73 ' 83 第 1 遮 光 圖 案 55、 75、 85 第 2 遮 光 圖 案 61、 111 第 1 曝 光 62 ' 112、 113 第 2 曝 光 82、 84 lap 域 102 遮 光 圖 案 210 第 1 圖 案 220 > 230 第 2 圖 案 600 透 明 基 板 610 遮 光 部 620 半 透 光 部 -52-200910021 IX. Description of the invention:  [Technical Field] The present invention relates to a pattern forming method for forming a transfer pattern in such a manner that a step can be generated on a photoresist on a transfer target by using a photomask, A method of manufacturing a thin film transistor substrate using the pattern forming method, And liquid crystal display device (Liquid Crystal Display: Hereinafter, the manufacturing method of LCD) And a photomask used in the pattern forming method.  [Prior Art] Nowadays in the field of LCD, Thin Film Transistor-Liquid Crystal Display: Hereinafter, it is called TFT-LCD) ’ because it has a lighter weight and lower power consumption than a CRT (Cathode Ray Tube). and so, Now its commercialization process has developed rapidly. The TFT-LCD has a TFT substrate having a structure in which TFTs arranged in a matrix are arranged in a matrix, And corresponding to each pixel configured with red, Color filters for green and blue pixel patterns, The schematic structure of the overlapping combination is performed under the interface of the liquid crystal phase.  There are many manufacturing steps for TFT-LCD. It is manufactured using only 5 to 6 masks on the TFT substrate. In this situation, Proposed by using a light-shielding portion, a light-shielding portion and a semi-transmissive portion of the photomask (referred to as a gray scale mask),  A method of reducing the number of photomasks used for manufacturing a TFT substrate (for example, Patent Document 1: Japanese Laid-Open Patent Publication No. 2005-3793 No. 3). here, The semi-transmissive portion refers to when the mask is used to transfer the pattern onto the object to be transferred, Decreasing the amount of light transmitted through the exposure light by a specified amount, A portion for controlling the amount of residual film after the photoresist film on the transfer target is imaged.  Grayscale masks have: Exposing the light transmitting portion of the transparent substrate; The light shielding portion is formed on a transparent substrate of 200910021 to form a light shielding film for shielding exposure light; And grayscale, Forming a light shielding film or a semi-transparent film on a transparent substrate, And the light transmission amount is reduced more than the case where the light transmittance is 100%. And let a specified amount of light pass through. Again, The transmittance of the transparent substrate was set to 100%. As such a grayscale mask,  The semi-transmissive portion is attached to the light shielding film or the semi-transparent film. Forming a fine pattern below the image resolution limit under exposure conditions, Or, A semi-transmissive film having a prescribed light transmittance is formed.  Fig. 7 is a cross-sectional view for explaining a pattern transfer method using a gray scale mask. Figure 7 shows the grayscale mask 20, A resist pattern 33 having a step thickness and a different thickness is formed on the transfer target body 30. also, In Figure 7, Symbol 32A, 32B shows a film laminated on the substrate 31 in the transfer target body 30.  The grayscale mask 20 shown in Fig. 7 has: Shading portion 21, When the grayscale mask 20 is used, Used to shield the exposure light (light transmittance is approximately 0%); Light transmitting portion 22, Exposing the surface of the transparent substrate 24 to expose the exposure light; And a semi-transmissive portion 23, When the light transmittance of the light transmitting portion 22 is set to 100%, Reduce the light transmittance by 20 to 60%. The semi-transmissive portion 23 is composed of a semi-transmissive semi-transmissive film 26 formed on the transparent substrate 24. Or, A fine pattern (not shown) exceeding the image analysis limit is formed under the exposure conditions when the mask is used. The light shielding portion 2 1 is composed of a light shielding film 25 formed on the semi-transmissive film 26.  When using the grayscale mask 20 as described above, The exposure light is substantially not transmitted through the light shielding portion 21, And the exposure light is reduced in the semi-light transmitting portion 23. Therefore, a resist film (positive photoresist film) coated on the transfer body 30, After transfer and after development, In the portion corresponding to the light shielding portion 21, The film thickness becomes thicker,  In 200910021, the portion corresponding to the semi-transmissive portion 23 has a thin film thickness, and the portion corresponding to the light-transmitting portion 22 has no film (substantially no residual film is formed). the result, The film thickness can be formed on the film 32B in a stepwise manner (i.e., Resistivity pattern with a step).  then, In the film-free portion of the resist pattern 3 3 shown in Fig. 7, The first etching is performed on, for example, the films 32A and 32B on the transfer target 30, The thin film portion of the resist pattern 33 is removed by ashing or the like. In this section,  For example, the second etching is performed on the film 32B on the transfer target 30. in this way, By using a grayscale mask 20, Forming a resist pattern 33 having a step thickness on the transfer target body 30, The steps of implementing the previous two masks, The number of masks can be reduced. In other words, Except for the light shielding portion and the light transmitting portion, By using a grayscale mask (or also known as a multi-gray mask) with a semi-transmissive portion, A resist pattern which is formed as a plurality of pattern processes can be formed on the transferred body.  SUMMARY OF THE INVENTION The above pattern transfer method, For example, it is extremely useful when manufacturing a liquid crystal display device. It can be on the transferred body, And a TFT channel portion is formed in a region corresponding to the semi-transmissive portion 23 of the gray scale mask. on the other hand, In recent years, With the liquid crystal display device being widely used in portable devices such as mobile phones, In particular, the pattern of the channel portion tends to be fine. This is because of the miniaturization of the channel section. It may be advantageous to perform the performance of the liquid crystal display device such as the operating speed of the TFT device or the brightness of the LCD.  however, Even the semi-transmissive portion 23 on the grayscale mask forms, for example, a pattern of line widths that do not reach the image resolution limit of the exposure device (for example, about 3 μm). This pattern cannot be faithfully transferred to the image. On the transfer body. E.g, In the case where the pattern having a line width of about 1 #m is formed on the light transmitting portion 23 in the semi-200910021, When the grayscale mask is used and the pattern is transferred by the exposure apparatus of the conventional liquid crystal display, The line width is the size of the left and right patterns below the image resolution limit of the exposure apparatus. therefore, It is not easy to form a portion having a width of about 1 // m and having a predetermined resist residual film on the object to be transferred (for example,  If the semi-transmissive portion 23 is adjacent to the light shielding portion 21, A resist pattern of the resist residual film 値 and the step portion of the light-shielding portion 2 1 . If it is not formed on the transferred body, it has a desired width (for example, If the step of the step is about 1 V m and it is preferable to have a resist residue film having a flat portion, When a TFT is to be fabricated using this resist pattern, Forming, for example, the channel portion may cause pattern defects, There is a fear that the malfunction of the liquid crystal display device may occur. of course, If a short-wavelength exposure light (KrF excimner laser (wavelength 248 nm), which is similar to the exposure apparatus currently used for LSI manufacturing, is used, When an ArF excimer laser (wavelength 193 nm) or the like and an optical system of a high number of apertures are used, Even a fine pattern of about l^m, Pattern transfer can still be performed. however, Such an exposure apparatus for LSI manufacturing is completely different from an exposure apparatus for manufacturing a liquid crystal display device in terms of a light source, a size, and the like. And very expensive,  Therefore, there are many disadvantages such as a substantial increase in the cost of the liquid crystal display device.  With this, I hope to find a way to form a resist pattern. It can use the exposure device for the current liquid crystal display, Even in the fine step portion below the image resolution limit (for example, about 1 V m), Still able to form this pattern,  And the film thickness can be formed on the transferred body in a stepwise manner (ie, A resist pattern with a step.  200910021 The present invention has been developed in view of the above circumstances, Its purpose is to provide a pattern forming method, Even if you don't use image resolution, it's very high.  Large-scale and expensive exposure device, It is still possible to form a transfer pattern having a step portion of a fine resist film thickness of, for example, about 1 V m or less, which is below the image analysis limit of the exposure device.  In order to solve the above problems, The present invention has the following constitution.  (Composition 1) f :  a pattern forming method, It has an exposure step, Use a reticle,  And irradiating the transferred body with exposure light, In the exposure step, the amount of exposure to the exposure light of the object to be transferred is selectively reduced depending on the portion, After the photoresist is imaged on the transferred body, Forming a desired transfer resist pattern comprising a distinct portion of the residual film, Its characteristics are:  The reticle used in the exposure step, The first light-shielding pattern formed on the same transparent substrate and the second light-shielding pattern different from the first light-shielding pattern are in the exposure step. The first light-shielding pattern C ί ' of the photomask is used to perform the first exposure on the object to be transferred, then, The second light-shielding pattern ' using the photomask overlaps the first exposure on the object to be transferred, and the second exposure is performed. The amount of exposure of the exposure light to the transfer target varies depending on the location.  (Configuration 2) As the pattern forming method of the configuration 1, The first exposure and the second exposure are equal exposure amounts.  (Configuration 3) As the pattern forming method of the configuration 1, The exposure of the third exposure and the exposure of the second 200910021 exposure system are different.  (Configuration 4) The pattern forming method according to any one of 1 to 3, Wherein at least one of the first exposure and the second exposure, When the exposed body is exposed separately, The amount of exposure of a predetermined amount of residual film is generated after the photoresist on the transferred body is developed.  (Configuration 5) f As the pattern forming method of the configuration 4, Wherein the exposure amount of the first exposure is when the object to be transferred is exposed separately, The amount of exposure of the residual film is substantially not generated after the photoresist on the transferred body is developed. The exposure amount of the second exposure, When the exposed body is exposed separately, The amount of exposure of the predetermined amount of residual film is generated after the photoresist on the transfer target is developed.  (Configuration 6) The pattern forming method of the configuration 4, wherein the exposure amount of the first exposure, When the exposed body is exposed separately, The amount of exposure of the predetermined amount of residual film is generated after the photoresist on the transferred body is developed. The exposure amount of the second exposure is when the object to be transferred is separately exposed. The amount of exposure of the residual film is substantially not generated after the photoresist on the transferred body is developed.  (Configuration 7) As the pattern forming method of the configuration 4, Wherein the exposure amount of the first exposure and the second exposure, When the exposed body is exposed separately, The amount of exposure of the predetermined amount of residual film is generated after the photoresist on the transfer target is developed.  (Configuration 8) The pattern forming method according to any one of 1 to 7, Wherein the transfer body is moved between the first exposure and the second exposure by using -10-200910021, The first light-blocking pattern and the second light-shielding pattern are sequentially placed at the same position with respect to the object to be transferred.  (Configuration 9) The pattern forming method according to any one of 1 to 7, Wherein the photomask is moved between the first exposure and the second exposure, The first light-blocking pattern and the second light-shielding pattern are sequentially and in the same position/position with respect to the object to be transferred.  (Configuration 10) The pattern forming method according to any one of 1 to 9, Wherein the boundary position X of the light shielding portion and the light transmitting portion of the first light shielding pattern is And a distance between the light shielding portion of the second light shielding pattern and the boundary position y of the light transmitting portion, When the first light blocking pattern overlaps with the second light blocking pattern, It is 2 μιη or more.  (Configuration 11) A method of manufacturing a thin film transistor substrate, It contains the use of such as composition { ;  The pattern forming step of the pattern forming method according to any one of 1 to 10.  (Configuration 12) A method of manufacturing a liquid crystal display device, It comprises a pattern forming step using the pattern forming method of any one of Compositions 1 to 10.  (Construction 13) A reticle, It has at least 2 shade patterns. The shading patterns are on the same substrate to grasp the relative position. Transferring on the same transfer target in sequence, By forming a multiple transfer pattern, Its characteristics are: The 2 shade patterns, When the exposure light is illuminated in an overlapping manner, When the light transmittance of the light-transmitting region where the light transmittance of the exposure light -11-200910021 is the largest is set to 100%, The semi-transmissive region having a light transmittance of 20 to 60% and a light-shielding region having a light transmittance of substantially 〇%.  (Construct 14) A reticle, When the photomask is used and the exposed light is irradiated to the object to be transferred, Selectively reducing the amount of exposure light to the object to be transferred by the portion, Forming a desired transfer pattern including a residual portion of the residual film on the photoresist on the transferred body, Characterized by; The photomask has a first light-shielding pattern formed on the same transparent substrate and a second light-shielding pattern different from the first light-shielding pattern; When the first light-shielding pattern and the second light-shielding pattern of the mask are sequentially placed in the same position with respect to the transfer target, and exposure is performed, The transfer pattern is formed on the transfer target body depending on the portion.  (Construction 15) If the photomask forming the 13 or 14, Wherein the boundary position X of the light shielding portion and the light transmitting portion of the first light shielding pattern is And a distance between the light shielding portion of the second light shielding pattern and the boundary position y of the light transmitting portion, When the first light blocking pattern overlaps with the second light blocking pattern, It is 2^111 or more.  (Configuration 16) A pattern forming method, It has an exposure step, A reticle having a light shielding portion and a light transmitting portion is used. And irradiating the transferred body with exposure light, In the exposure step, the amount of exposure to the exposure light of the object to be transferred is selectively reduced depending on the portion, Forming a desired transfer pattern containing the different portions of the residual film on the photoresist on the transferred body, Its characteristics are: In the exposure step, Use the shape -12- 200910021 to form a blackout pattern on the reticle, Performing the first exposure on the transferred body,  Then 'changing the focusing conditions of the exposure light, Performing the second exposure on the transfer target using the light shielding pattern; By changing the focusing conditions of the exposure light of the first exposure and the second exposure, The amount of exposure of the exposure light to the transferred body varies depending on the location.  (Configuration 17) As the pattern forming method of the composition 16, Where the first exposure and the second f"   At least one of the exposures, When the exposed body is exposed separately,  The amount of exposure of a predetermined amount of residual film is generated after the photoresist on the transferred body is developed.  (Composition 18) - a kind of mask, It has a multi-transfer pattern. The utility model has a light shielding portion and a light transmission portion on the transparent substrate. By focusing on different conditions, Performing multiple transfers on the same transfer body, And forming a multiple transfer pattern, Its characteristics are: The multiple transfer pattern is developed when the photoresist on the transfer target is developed. The portion having the second resist residual film portion sandwiching the portion of the first resist residual film.  (Construction 19) If the reticle forming the 18, Wherein the first resist residual film portion is the largest portion of the residual film residual agent ’, and the second resist residual film portion is a portion where the residual film 小的 is smaller than the portion of the first resist residual film.  (Configuration 20) - a pattern forming method, It has an exposure step, A reticle having a light-shielding pattern having a light-shielding portion and a light-transmitting portion is used. And irradiating the transferred body with the exposure light, In the exposure step, the amount of exposure to the exposure light of the body to be transferred is selectively reduced according to the portion, Forming a desired transfer pattern including a residual portion of the residual film on the photoresist on the transferred body, Its characteristics are: In this exposure step, Disposing the light shielding pattern of the photomask on the first position on the transfer target body, Performing the first exposure on the transferred body, then, The light-shielding pattern is placed at a second position on the transfer target body with respect to the transfer target being moved by a predetermined distance. Performing a second exposure on the transfer target; By overlapping exposure of the first exposure and the second exposure, Exposure to the object to be transferred The amount of exposure of the light varies depending on the part.  (Configuration 21) As the pattern forming method of the composition 20, Wherein at least one of the first exposure and the second exposure, When the exposed body is exposed separately, The amount of exposure of a predetermined amount of residual film is generated after the photoresist on the transfer target is developed.  (Configuration 22) A reticle, It has a multi-transfer pattern. The utility model has a light shielding portion and a light transmission portion on the transparent substrate. For the same transfer body, Configured in different relative positions, Perform multiple transfers in sequence, To form a multiple transfer pattern, Its characteristics are:  When the multi-transfer pattern is used to develop a photoresist on the transfer target, A resist pattern is formed so as to have a portion of the second resist remaining film portion sandwiching the portion of the first resist residual film.  (Construction 23) As the photomask forming the 22, Wherein the first resist residual film portion is the largest portion of the residual film residual agent ’, and the second resist residual film portion is a portion where the residual film 小的 is smaller than the portion of the first resist residual film.  -14- 200910021 (Structure 24) A pattern forming method, It has an exposure step 'using a photomask' and irradiating the transferred body with exposure light, In the exposure step, the amount of exposure to the exposure light of the object to be transferred is selectively reduced depending on the portion, Forming a desired transfer pattern including a residual portion of the residual film on the photoresist on the transferred body, Its characteristics are: The reticle used in the exposure step, a first pattern formed on the same transparent substrate and a second pattern different from the first pattern;  In the exposure step, it includes: Disposing the photomask on the first position on the transfer target body, Simultaneously performing the first exposure on the first transfer pattern and the second pattern on the transfer target, and then placing the photomask on the transfer target by moving the transfer target by a distance of one pattern unit. On the second position, The step of simultaneously performing the second exposure on the first pattern and the second pattern on the transfer target: The first pattern and the second pattern are transferred at the same position on the transfer target, and the exposure amount of the exposure light on the transfer target varies depending on the portion.  (Configuration 25) As the pattern forming method of the composition 24, In the process of repeating the movement of the reticle to the transfer target body at a distance of one pattern unit at a time, the first pattern and the second pattern are simultaneously exposed on the transfer target body. step.  (Configuration 26) A method of forming a pattern of 24 or 25, The first exposure and the second exposure are equal exposure amounts.  (Structure 27) 200910021 If the 24 3 pattern and the second pattern are formed.  (Construction 28) A reticle that constitutes a 2 4 3 pattern and an exposure amount reduction gauge of the second drawing (constitution 29),  Light, Depending on the location, the amount of radiation, After being transferred, the desired transfer pattern,  The pattern of the first pattern on the substrate and the exposure amount reduction gauge of the second figure are opposite to each other and the second pattern is different depending on the location (constitution 30). For example, 2 9 = one image per time On the transferred body, Thereby, the transfer pattern is transferred.  The pattern forming method according to any one of the above-mentioned items, wherein the first method is a pattern forming method of any one of the light-shielding patterns 226, wherein the light-shielding portion and the light-transmitting portion are at least one of the first cases, The pattern includes a light shielding portion and a semi-transmissive portion that will pass through the quantitative amount.  Using a reticle, The photoreceptor on the irradiated body is selectively irradiated with an exposure light to selectively reduce the exposure light to the transfer target to form a portion including the residual portion of the residual film: The photomask has a second pattern formed in the same transparent pattern and different from the first pattern; At least one of the first cases, The pattern includes a light shielding portion and a semi-transmissive portion that will pass through the quantitative amount; When the first image of the mask is sequentially placed and exposed in the same manner as the position to be transferred, An exposure amount transfer pattern is formed on the transfer target.  L-mask, One side of the reticle relatively moves the distance of the reticle to the transferred body unit, The exposure of the first pattern and the second pattern is repeated at the same time. The amount of exposure formed on the printed body varies depending on the portion. -16 - 200910021 According to the pattern forming method of the present invention, Even if you don't use image resolution, it's very high, Large-scale and high-priced exposure devices, The film thickness can still be formed on the transfer target with a stepwise shape (i.e., The desired resist pattern with a step). E.g, Using the current exposure device for liquid crystal displays, A resist pattern containing a residual film of a resist having a fine width of about i/zm can be formed accurately on the transfer target.  of course, In addition to the manufacture of liquid crystal display devices, For other uses (such as the manufacture of LSI devices), By applying the pattern forming method of the present invention, the amount of exposure of the desired portion to the transferred body is reduced, It is also possible to form a very fine multi-level gray scale pattern.  also, According to the present invention, When transferring a pattern using multiple exposures, It is not necessary to exchange two or more masks for transfer. therefore,  A pattern defect caused by the inevitable alignment deviation during transfer prevention of 2 or more times, Has a very significant effect.  In addition, When using the pattern transfer method of the conventional gray scale mask, There are 2 rendering steps in the manufacturing phase of the grayscale mask, It is impossible to avoid the occurrence of the alignment deviation in the two renderings. The accuracy of the transfer pattern will also be affected. In contrast, a photomask used in the pattern forming method of the present invention, The pattern has a pattern formed simultaneously on the same transparent substrate by one drawing step (in the first configuration, First light shielding pattern and second light shielding pattern), and so , A light-shielding pattern reflecting the drawing accuracy of the drawing machine (the element caused by the alignment deviation at the time of drawing) can be formed. therefore, In the present invention, The alignment between the two light-shielding patterns of the first exposure and the second exposure can be maintained with high precision.  also, In the first configuration of the present invention, In the first exposure and the second exposure -17- 200910021, It is advantageous to move the relative position of the reticle to the transfer target in a state where the exposure device is fixed. The alignment can be performed on the exposure device at this time. Therefore, positioning can be performed with high precision.  In addition, According to the sixteenth composition, for example, In the case of forming a transfer pattern having a portion in which the second resist residual film portion sandwiches the portion of the first resist residual film portion (formed at the both ends of the residual film region of the thick film or around the residual film region of the film) In the case of a transfer pattern, etc.), it is possible to avoid an asymmetrical pattern due to alignment deviation. and, When making multiple exposures, Since the pattern on the mask does not change the relative position on the transferred body to which the pattern is transferred, and so , Can suppress the deviation of the alignment, To achieve the alignment accuracy of the exposure device used, The desired resist pattern can be formed with high precision and easily.  In addition, according to the 20th structure, E.g, In the case of a transfer pattern having a residual film region of a film formed at or around both ends of a residual film region of a thick film,  It is possible to avoid the case where an asymmetrical pattern is generated due to the alignment deviation. and, Although between the first exposure and the second exposure, Moving the transferred body and the reticle relatively, However, since the alignment system can be performed on the exposure device, Therefore, positioning can be performed with high precision. the result, Further, for example, a resist pattern of a residual film of a resist having a fine pattern width of 1 Ai m or less can be formed with high precision on the transfer target.  In addition, According to the twenty-fourth structure, E.g, a case where a transfer pattern is formed by multi-face adhesion on a transfer target body, The reticle in which the first pattern and the second pattern are formed is relatively moved with respect to the transfer target at a distance of one pattern unit at a time (for example, a panel distance), The first pattern and the second pattern are repeatedly exposed on the transfer target while being exposed. therefore, Based on the exposure that can be determined by the exposure conditions, When making multiple exposures,  200910021 It is possible to shorten the moving distance when the relative movement of the transfer target and the mask between exposures is performed, and positioning can be performed with high precision. In addition, It is not necessary to shield the operation of either the first pattern or the second pattern during exposure.  As above, According to the present invention, A desired resist pattern having a step thickness and a plurality of gray scales can be formed on the transfer target with high precision. In addition, A resist pattern of, for example, a resist film residual film having a fine width of about 1 m can be formed on the transfer target with high precision.  [Embodiment] Hereinafter, The present invention will be described based on a plurality of embodiments.  [First Embodiment] Fig. 1 is a cross-sectional view showing a first embodiment of a pattern forming method of the present invention.  a pattern forming method according to the first embodiment, As shown in Figure 1, The first light shielding pattern 53 formed on the photomask 5 is used, The first exposure 61 is performed on the transfer target 1, then, The second light-shielding pattern 55 also formed on the photomask 5 is used, Similarly, the second exposure 62 is superposed on the same position on the transfer target 1.  Hereinafter, the case of using a positive type resist will be described as an example. Here, a portion that is sufficiently exposed by transmitting a predetermined amount of light,  Photosensitive to the photoresist on the transfer target 1, And no residual film will be produced after development. therefore, The first light-shielding pattern 53 is formed as a region where substantially no residual film is generated after the photoresist film 13 on the transfer target 1 is developed. The exposure light is transmitted (in other words, the area where the residual film is formed after the development of the photoresist film 13 is blocked). On the other hand, the second light-shielding pattern 55 is formed to transmit the exposure light only in a region where a predetermined amount of the residual film of the film is generated after the film is developed by the photoresist -19-200910021. With this, By using the first exposure 61 of the first light shielding pattern 53, An area that does not substantially form a residual film of the photoresist film 13 on the object to be transferred 1 is defined. then, By using the second exposure 62 of the second light shielding pattern 55, A region in which a residual film of a predetermined amount of film is produced after the photoresist film 13 on the transfer target 1 is developed is And a region where a residual film of a thick film is formed after the photoresist film 13 is substantially unexposed.  The first light blocking pattern 53 and the second light blocking pattern 55 of the mask 5, All on the same transparent substrate (for example, Quartz substrate, etc.) 5 1 , For example, a light-shielding film made of chromium (C〇 or the like is formed into a predetermined pattern, The first light-shielding pattern 53 is formed in a region 52 and the second light-shielding pattern 55 is formed in a region 54. It is divided into suitable regions on the same transparent substrate 51. also, The light-shielding film is formed in such a manner as to have a suitable light-shielding property in relation to the wavelength of the exposure light to be used. The film material and film thickness are selected.  also, The reticle 5 is formed by using, for example, a mask substrate on which a light shielding film is formed on a transparent substrate 51. It is obtained by processing a light-shielding film by a photolithography pattern.  In addition, The first light-shielding pattern 53 and the second light-shielding pattern 55 which are simultaneously formed by one drawing step on the same transparent substrate 51 are provided. and so, It is possible to form a light-shielding pattern that is purely dependent on the drawing accuracy of the drawing machine (a factor caused by the misalignment at the time of drawing).  In the first embodiment, The exposure amount of the first exposure 61, In the case where the photoresist film 13 on the substrate 1 is a positive photoresist, When exposed to a single exposure, After the photoresist film 13 on the transfer target 1 is developed, substantially no exposure amount of the residual film is generated. then, The exposure amount of the second exposure 62, When it is exposed separately -20- 200910021 , After the photoresist film 13 is developed, a residual film of a predetermined amount of the film is generated [20% of the residual film amount (or residual film thickness) after the photoresist film is developed in the substantially unexposed region is 100%~ The amount of exposure of the residual film amount in the range of 60%. also, The exposure wavelengths of the first exposure 61 and the second exposure 62 can be, for example, i-line (365 nm) to g-line (436 nm) used in an exposure apparatus for a conventional liquid crystal display.  also, In Figure 1, Symbol 1 2A of the transferred body 1 12B shows a film laminated on the substrate 11 in the transfer target 1, It selects an appropriate film material depending on the type of substrate or the like to be manufactured, Film thickness and film number.  In the present invention, Two light shielding patterns are arranged on the same transparent substrate.  And in this order, by performing exposure on the same transfer target, The transfer of fine patterns can be performed. By forming two shade patterns on the same transparent substrate, To form a light-shielding pattern according to the drawing accuracy of the drawing machine, The alignment between the two shading patterns, It can be accurately maintained by a positioning mechanism (such as a laser interferometer) mounted on the exposure device. In order to sequentially exchange the two shade patterns of the exposure, The transferable body can be moved, The mask can also be moved. that is, By moving the transfer target 1 between the first exposure 61 and the second exposure 62, The first light-shielding pattern 53 and the second light-shielding pattern 55 are relatively in the same position with respect to the object to be transferred 1 in order. Or, By moving the mask 5 between the first exposure 61 and the second exposure 62, The first light-shielding pattern 53 and the second light-shielding pattern 55 are sequentially positioned at the same position with respect to the object to be transferred 1 in order. also, By moving the two to each other, The first light-shielding pattern 53 and the second light-shielding pattern 55 may be relatively in the same position with respect to the object to be transferred 1 in order. also, When the first exposure 61 of the first light-shielding pattern 5 3 is used, The second light-shielding-21 - 200910021 pattern 55 on the mask 5 may be covered by a suitable shielding plate 4 or the like, When the second exposure 62 of the second light shielding pattern 55 is used, The first light blocking pattern 53 can be covered by the shielding plate 4 or the like.  As described above, by using the first exposure 61 of the first light-shielding pattern 53 of the mask 5, And the second exposure 62 of the second light-shielding pattern 55 is used to superimpose and expose the light-receiving film 13 on the object to be transferred 1 to the exposure light 1 to form an image. a region where no residual film is produced (indicated by the hatching of A in Fig. 1), a region of the residual film / of a predetermined amount of film (shown by the hatching of B) after development And the photoresist film 13 is substantially unexposed to form a region of the residual film of the thick fl, which is shown by the hatching of C.  then, When the photoresist film 13 on the substrate 1 on which the first exposure 61 and the second exposure 62 are completed is developed, As shown in Figure 1 (c), Forming a residual film portion 1 3 a including a thick film on the transfer target 1 The film thickness of the residual film portion 13b of the film and the portion 13c having no residual film (substantially no residual film is formed) is a stepwise and different (i.e., stepped) resist pattern.  at this time, The residual film portion 13b of the film is for the residual film portion 13a of the thick film. It can be 20%~60% film thickness.  According to the pattern forming method of the first embodiment described above, Even if the image resolution is not used, Large-scale and high-priced exposure devices, It is still possible to form a resist pattern having a desired step thickness in a stepwise manner (with a step) on the transfer target. E.g, An existing exposure device for a liquid crystal display can be used. A resist pattern containing a residual film of a resist having a fine pattern width is formed with high precision.  This allows direct use of an exposure source (a source of light having a wavelength range commonly referred to as i-line to g-line), And can improve the image resolution of the effect, And at this time, -22- 200910021 needs to be in terms of countermeasures. Quite simple and useful.  a pattern forming method of the present invention, For example, it can be suitably used for the manufacture of a liquid crystal display device or the like. But in addition to the manufacture of liquid crystal display devices, For other purposes (for example, LSI device manufacturing) By applying the pattern forming method of the present invention, Reducing the exposure amount of the desired portion for the transferred body, It is also possible to form a very fine multi-level gray scale pattern. In addition, At this time, because no more than two masks are used, Therefore, it is possible to prevent pattern defects caused by the alignment deviation of two or more masks.  [Second Embodiment] Fig. 2 is a cross-sectional view showing a second embodiment of the pattern forming method of the present invention.  Similar to the first embodiment, a pattern forming method according to a second embodiment, As shown in Figure 2, Using the first light shielding pattern 73 formed on the photomask 7, The first exposure 61 is performed on the transfer target 1, then, The second light shielding pattern 75 formed on the reticle 7 is used, The second exposure 62 is superposed on the same position on the transfer target 1.  however, In the second embodiment, The first light-shielding pattern 73 is formed as a region where a residual film of a predetermined amount of the film is generated only after the photoresist film 13 on the transfer target 1 is developed. The exposure light is transmitted through. on the other hand, The second light-shielding pattern 75 is formed as a region where substantially no residual film is generated after the photoresist film 13 is developed. The exposure light is transmitted through. With this, By using the first exposure 61 of the first light-shielding pattern 73, A region where the photoresist film 13 is formed on the transfer target 1 to produce a residual film of a predetermined amount of the film, then, By using the second exposure 62 of the second light shielding pattern 75, Delineating the area where the photoresist film 13 -23- 200910021 on the transfer target 1 is substantially free of residual film after development And a region where a residual film of a thick film is formed after the photoresist film 13 is developed without being substantially exposed.  The first light blocking pattern 73 and the second light blocking pattern 75 of the mask 7 All on the same transparent substrate (for example, Quartz substrate, etc.) 7 1 The first light blocking pattern 73 is formed in a region 72 and the second light blocking pattern 75 is formed in a region 74. Divided into suitable areas.  In the second embodiment, The exposure amount of the first exposure 61, In the case where the photoresist film 13 on the substrate 1 is a positive photoresist, When exposed to a single exposure, The exposure amount of the residual film of the predetermined amount of film is generated after the photoresist film 13 on the transfer target 1 is developed, Then the exposure amount of the second exposure 62, When exposed to a single exposure, The amount of exposure of the residual film is substantially not generated after the photoresist film 13 is developed.  also, The exposure wavelengths of the first exposure 61 and the second exposure 62 are the same as those in the first embodiment. For example, an i-line (365 nm) to a g line (436 nm) used in an exposure apparatus for a liquid crystal display of the related art can be used.  In order to sequentially exchange the exposed two shade patterns 73, 75' can be moved between the first exposure 61 and the second exposure 62 by the transfer body 1. The first light-shielding pattern 73 and the second light-shielding pattern 75 are in the same position to the transfer target 1 in the same direction. Or, By moving the mask 7 between the first exposure 61 and the second exposure 62, The first light-shielding pattern 73 and the second light-shielding pattern 7 are sequentially and relatively in the same position with respect to the to-be-transferred body 1.  also, When the first exposure 61 of the first light-shielding pattern 73 is used, the second light-shielding pattern 75 can be covered by the shielding plate 4 or the like. When the second exposure 62 of the second light blocking pattern 75 is used, The first light shielding pattern 73 - 24 - 200910021 may be covered by the shielding plate 4 or the like as described above, The first exposure 61 of the first light-shielding pattern 73 of the photomask 7 is used, And the second exposure 62 of the second light-shielding pattern 75 is used to superimpose the light-receiving film 13 on the object to be transferred 1 by subjecting the object to be transferred 1 to overlap exposure. a region where substantially no residual film is generated after development (indicated by the hatching of A in FIG. 2), a region of the residual film of a predetermined amount of film (shown by the hatching of B) after development, And a region where the photoresist film is not exposed to light and a residual film of the thick film is formed after development (indicated by the hatching of C).  then, When the photoresist film 13 on the object to be transferred 1 on which the first exposure 61 and the second exposure 62 have been completed is developed, 'as shown in the second (c) view, 'the thickness is formed on the object to be transferred 1 The residual film portion of the membrane is 1 3 a, The film thickness of the residual film portion 13b of the film and the portion 13c having no residual film (substantially no residual film is generated) is stepwise (i.e., Resistive pattern with step).  [THIRD EMBODIMENT] Fig. 3 is a cross-sectional view showing a third embodiment of the pattern forming method of the present invention.  Similar to the first embodiment, a pattern forming method according to a third embodiment, As shown in Figure 3, Using the first light shielding pattern 83 formed on the photomask 8, The first exposure 61 is performed on the transfer target 1, then, The second light shielding pattern 85 formed on the reticle 8 is used, The second exposure 62 is superposed on the same position on the transfer target 1.  however, In the third embodiment, The first light-shielding pattern 83 is formed as a region where only a predetermined amount of the film of the film is formed after the photoresist film 13 on the transfer target 1 is developed, and a region where substantially no residual film is generated. Allow exposure light to pass through. on the other hand, The second light-shielding pattern 85 is formed as a region where substantially no residual film is generated after the development of the photoresist film -25-200910021 1 3 . The exposure light is transmitted through. By this, By using the first exposure 61 of the first light blocking pattern 83, A region where a residual film of a thick film is formed on the transfer target 1 after being exposed to the photoresist film 13 without being substantially exposed is defined. then, By using the second exposure 62 of the second light-shielding pattern 85, A region in which the residual film which is substantially not generated after the photoresist film 13 on the transfer target 1 is developed is delineated, And a region where a residual film of a predetermined amount of the film is generated after the photoresist film 13 is developed.  f the first light blocking pattern 83 and the second light blocking pattern 85 of the mask 8 Transparent substrates that are all in the same gas (for example, Quartz substrate, etc.) 8 1 The first light-shielding pattern 83 is formed in a region 82 and the second light-shielding pattern 85 is formed into a region 84, and is divided into suitable regions.  In the third embodiment, The exposure amount of the first exposure 61, In the case where the photoresist film 13 on the substrate 1 is a positive photoresist, When the photoreceptor film on the transfer target 1 is developed, the amount of exposure of the residual film of a predetermined amount of the film is generated, then, The exposure amount of the second exposure 62, At the time of L/exposure alone, the exposure amount of the residual film is not substantially generated after the development of the photoresist film 13. The exposure wavelengths of the first exposure 61 and the second exposure 62 are the same as in the first embodiment. For example, an i-line (365 nm) to a g line (436 nm) used in an exposure apparatus for a conventional liquid crystal display can be used.  Further, in the case of the third embodiment, A region of the residual film which is substantially not generated after the photoresist film 13 on the transfer target 1 is developed, The exposure is performed twice by the first exposure 61 and the second exposure 62. and so, The exposure amount of the second exposure 62, It can also be the same as the exposure of the third exposure 61. When the photoresist film 13 is developed, an exposure amount of a residual film of a predetermined amount of the film is generated. When the exposure of the first exposure 61 and the second exposure 62 is performed twice with the above exposure amount -26-200910021, As a result, the amount of exposure of the residual film is substantially not generated after the region is developed by the irradiation resist film 13.  In order to sequentially exchange the exposed two shading patterns 83, 85, The object to be transferred 1 can be moved between the second exposure 61 and the second exposure 62, Or moving the mask 8 between the first exposure 61 and the second exposure 62, The first light-shielding pattern 83 and the second light-shielding pattern 85 are relatively in the same position with respect to the object to be transferred 1 in order. also, When the first exposure 61 of the first light-shielding pattern 83 is used, the second light-shielding pattern 85 can be covered by the shielding plate 4 or the like. When the second exposure 62 of the second light-shielding pattern 85 is used, The first light-shielding pattern 83 can be covered by the shielding plate 4 or the like.  As above, The first exposure 61 of the first light-shielding pattern 83 of the photomask 8 is used, And using the second exposure 62 of the second light-shielding pattern 85 to perform overlap exposure on the transfer target 1, Irradiating the photoresist film 13 on the transfer target 1 with exposure light, a region where substantially no residual film is generated after development (indicated by the hatching of A in Fig. 3), a region of the residual film of a predetermined amount of film (shown by the hatching of B) after development, And a region where the photoresist film is not exposed to light and a residual film of the thick film is formed after development (indicated by the hatching of C).  then, When the photoresist film 13 on the substrate 1 on which the first exposure 61 and the second exposure 62 are completed is developed, As shown in Figure 3(c), A residual film portion 13a including a thick film is formed on the transfer target 1, The film thickness of the residual film portion 13b of the film and the portion 13c having no residual film (substantially no residual film) is stepped and different (i.e., having a step).  In addition to the above, When the first exposure and the second exposure are separately performed for exposure -27- 200910021, A residual film of a predetermined amount of film thickness can also be produced on the photoresist film after development.  In this case, It is also possible to use the first exposure and the second exposure, And make the light source have the same light intensity, With the second exposure of the first exposure and the second exposure, A region where no residual film is substantially formed after photoresist formation is formed. In this case, It is not necessary to adjust the exposure amount between the first exposure and the second exposure. The amount of exposure at this time, For example, when the photoresist film is exposed once, The residual film 可以 of the photoresist which can be developed is selected so as to be about 55% to 80% of the film thickness of the unexposed portion.  the following, Specific embodiments of the invention are described.  Fig. 4 is a view showing the first exposure on the substrate to be printed using the first light-shielding pattern shown in Fig. 5(a). then, When the second light-shielding pattern shown in Fig. 5(b) is used, and the second exposure is performed at the same position on the transfer target, The light intensity distribution of the exposure light that is irradiated onto the transfer target. This light intensity distribution is obtained by a hardware simulator that sets the exposure conditions of the reticle.  The first light-shielding pattern shown in Fig. 5(a) and the second light-shielding pattern shown in Fig. 5(b), On the same transparent substrate (quartz substrate), A predetermined pattern is formed by a chrome (Cr) light shielding film. By using the first exposure of the first light-shielding pattern of Fig. 5(a), And using the overlapping exposure of the second exposure of the second light-shielding pattern of Fig. 5(b), As shown in Figure 5 (c), Irradiating the exposed light on the transferred body 1, Forming a region 9c where the photoresist is substantially unexposed, A region 9b in which a predetermined amount of residual film is produced after development, And a region 9a in which no residual film is substantially produced after development. also, In this embodiment, The first exposure and the second exposure are both set to an exposure light source wavelength of 365 nm, Number of apertures in the optical system -28- 200910021 ΝΑ: 0. 143, σ (coherence): 〇. 75. The projection magnification x1, the exposure amount of the first exposure and the second exposure is such that when the transfer target is separately exposed, a predetermined amount of residual film is generated after the photoresist on the transfer target is developed (set The amount of exposure which is approximately 50% of the residual film amount when the amount of residual film after the photoresist is developed in the region which is not exposed is substantially 100%. Under the above conditions, the pattern width of the light-shielding portion formed by the Cr light-shielding film of the second light-shielding pattern shown in Fig. 5(b) is 4/zm (fixed), and the fifth (a) figure is provided. The pattern width of the same light-shielding portion of the first light-shielding pattern shown is, for example, 10 V m , as an example C 1 0 0 . In this case, the distance (width) W between the light-shielding portion of the first light-shielding pattern and the boundary position X of the light-transmitting portion and the light-shielding portion of the second light-shielding pattern and the boundary position y of the light-transmitting portion is 3 // m, A residual film region corresponding to the region 9b thereof is formed on the transferred body. Fig. 4 is a view showing that the pattern width of the light-shielding portion of the first light-shielding pattern is changed within a range of 5/m (Example C050) to Example C150) to perform overlapping exposure of the first exposure and the second exposure. At this time, the light intensity distribution of the exposure light on the object to be transferred is irradiated. The coordinate of the horizontal axis of Fig. 4 corresponds to the range R of Fig. 5(c). As is apparent from the results of Fig. 4, according to the pattern forming method of the present invention, a resist residual film having a width of a flat portion having a clear degree of about 1 m can be formed on the object to be transferred. In particular, it is possible to form a fine pattern which is more suitable for the case where the pattern width W of the region 9b is 2 μm (Example C080) or more. Next, a comparative example corresponding to the present invention will be described. This comparative example shows a case where pattern transfer is performed on the transfer target by using a conventional gray scale mask on the -29-200910021 line. Specifically, as shown in FIG. 6(b), a light-shielding portion 610 having a Cr light-shielding film, a light-transmitting portion (exposing a transparent substrate), and a semi-transparent portion by MoSi are used on the transparent substrate (quartz substrate) 600. The light-shielding portion of the semi-transmissive portion (the light transmittance of the light-transmitting portion is reduced by about 50% when the light transmittance of the light-transmitting portion is 100) is 620, and the exposure device for the liquid crystal display is used once. The transfer of the pattern on the transfer target is performed by exposure. Further, the light source wavelength of the exposure apparatus was the same as that of the embodiment, and was 365 nm. Fig. 6(a) shows the pattern width HT of the semi-transmissive portion 620 composed of the MoSi semi-transmissive film, which is changed in the range of 0/zm to 6#m, and the pattern is transferred to the transfer target. At the time of printing, the light intensity distribution of the exposure light on the object to be transferred is irradiated. As is clear from the results of Fig. 6, if the resist film remaining on the transfer target is to be controlled by the semi-transmissive film, when the pattern width HT is set to about 3/zm, it can finally be on the transfer target. It is formed as a step portion of about 1 // m, but there is almost no flat portion. Therefore, in the pattern forming method of the comparative example, it is extremely difficult to perform the width control, and it is also preferable to form a resist residual film having a clear flat portion of 1 V m or less on the transfer target with high precision. Difficulties. [Fourth embodiment] Fig. 8 is a cross-sectional view showing a fourth embodiment of the pattern forming method of the present invention. The fourth embodiment is a pattern forming method according to the invention described in claim 16. In the pattern forming method according to the fourth embodiment, as shown in Fig. 8, the light-shielding pattern 1〇2 formed on the photomask 100 is used to perform the exposure of the -30-200910021 1 on the object to be transferred 1 1 1 1 The focus condition of the exposure light is changed to the first exposure 1 1 1 , and the second exposure 112 is performed on the transfer target by using the light shielding pattern 102 formed on the mask 100. In other words, by the change of the focusing condition of the exposure light of the first exposure 111 and the second exposure 112, the exposure amount of the exposure light on the object to be transferred 1 is exposed depending on the location. Further, the light-shielding pattern 102 of the photomask 100 is formed into a predetermined pattern on a transparent substrate (for example, a quartz substrate or the like) 1〇1. In the fourth embodiment, the exposure amount of the first exposure 1 1 1 is set to, for example, when the photoresist film 13 on the transfer target 1 is a positive photoresist, and is set to be rotated when it is exposed alone. The exposure amount of the residual film of the film of a predetermined amount is generated after the photoresist film 13 on the printed body 1 is developed. Next, the second exposure 112 is changed to a focus condition different from the first exposure 1 1 1 . For example, the second exposure 1 1 2 is performed in a state in which the focus position is shifted from the first exposure 111 by a predetermined amount. In this case, although the amount of defocus can be appropriately determined, for example, the size of the desired pattern of the residual film region of the thick film formed on the transfer target 1 and the residual film region of the film formed around it can be considered. Size, etc. to decide. Further, the exposure wavelengths of the first exposure 111 and the second exposure 112 are the same as those of the first embodiment, and for example, an i-line (365 nm) to a g-line (436 nm) used in a conventional liquid crystal display exposure device can be used. As described above, by using the first exposure 1 1 1 ' of the light-shielding pattern 102 of the mask 100 and then changing the focusing condition of the exposure light to the first exposure 1 1 1 using the second exposure 112 of the light-shielding pattern 102 Overlapping exposure is performed on the transferred body 1. Thereby, the photoresist film 13 on the transfer target 1 is irradiated with exposure light to form a region where substantially no residual film is generated after development (-31 - 200910021 is shown by the hatching of A in Fig. 8 a region where a residual film of a predetermined amount of film is formed after development (indicated by the hatching of B), and a region where the photoresist film is substantially not exposed to a residual film of a thick film after development (by C The hatching is shown). Then, when the photoresist film 13 on the object to be transferred 1 on which the first exposure 111 and the second exposure 112 have been completed is developed, as shown in FIG. 8(c), the object to be transferred 1 is formed. The residual film portion 13a of the thick film, the residual film portion 13b of the film formed around the residual film portion 13a of the thick film, and the residual film (substantially f. .  The film thickness of the portion 1 3 c where no residual film is formed is stepwise and different (i.e., has a step & a difference) resist pattern. That is, as the resist pattern formed at this time, it is possible to form a thick film portion 13 a (the first resist residual film portion) after developing the photoresist on the transfer target. The portion of the residual film yttrium that is symmetrically held by the thin film portion 13b (the second resist residual film portion). According to the pattern forming method of the fourth embodiment described above, for example, when a transfer pattern having a residual film region of a film is formed at both ends or around the residual film region of the thick film, the use of the conventional gray scale mask can be avoided. In the case of the printing method, it is a case where the problem is an asymmetrical pattern due to the alignment deviation. Further, the pattern can be easily formed without using an exposure apparatus having a very high image resolution and a large scale and high cost. In the fourth embodiment, when the plurality of exposures are performed, the relative position on the light-receiving pattern on the photomask and the object to be transferred on which the light-shielding pattern is transferred is not changed, so that the misalignment can be suppressed and the use can be suppressed. The alignment accuracy of the exposure apparatus can be accurately and easily formed into a desired resist pattern. [Fifth Embodiment] Fig. 9 is a view showing a fifth embodiment of the pattern forming method of the present invention - 32 - 200910021 The table 5 embodiment is a pattern forming method according to the invention of claim 20. The pattern forming method according to the fifth embodiment is formed in the mask 1 as shown in Fig. 9. The light-shielding pattern 102 on 00 is placed on the first position on the transfer target} (Fig. 9(a)), and the first exposure η is performed on the transfer target 1, and then the light-shielding pattern 102 is made The transfer target 1 is relatively moved by a predetermined distance, and is placed at a second position (Fig. 9(b)) on the transfer target 1, and the second exposure 113 is performed on the transfer target 1. 1 overlapping exposure of the first exposure 111 and the second exposure 113 between the exposure ill and the second exposure 1 1 3 'changing the relative position of the light-shielding pattern 1 〇 2 and the transfer target 1 ' on the transfer target 1 The exposure amount of the exposure light is exposed depending on the portion. The light shielding pattern 102 of the mask 100 is formed into a predetermined pattern on a transparent substrate (for example, a quartz substrate or the like) 101. In the fifth embodiment The exposure amount of the first exposure ill and the second exposure 113 is set, for example, when the photoresist film 13 on the transfer target 1 is a positive photoresist, and is set to be in the transfer target 1 when it is separately exposed. The exposure amount of the residual film of the predetermined amount of film is generated after the upper photoresist film 13 is developed. The exposure amounts of the first exposure in and the second exposure 113 may be equal. The amount of light may be a different amount of exposure. When the exposure amount of the first exposure 111 and the second exposure 113 is changed, for example, it may be formed on the transfer target 1 at both ends by changing to a thick film. The film thickness of the residual film region of the film at both ends of the residual film region. The exposure wavelengths of the first exposure 111 and the second exposure 113 are the same as those of the first embodiment, and can be used, for example, by a conventional exposure device for a liquid crystal display. I line (365 nm) to g line (436 nm) -33- 200910021 In addition, although the relative position of the light-shielding pattern 102 and the transfer target 1 is changed between the first exposure 111 and the second exposure 113, in this case, , the mask 1 can be moved in a predetermined direction, or the transferred body can be moved in the opposite direction. Alternatively, the two can be moved in opposite directions. Regardless of which method is used, the alignment at this time can be accurately maintained by the positioning mechanism mounted on the exposure device. Further, the amount of relative movement at this time can be appropriately determined, but the size of the desired pattern of the residual film region of the thick film formed on the transfer target 1 and the residual film region of the film formed at both ends thereof can also be considered. Size, etc. to decide. As described above, the first exposure 111 of the light-shielding pattern 102 of the photomask 100 is used, and then the relative position of the light-shielding pattern 102 to the transfer target 1 is changed, and the second exposure 113 of the light-shielding pattern 102 is used. The exposed body 1 is subjected to overlap exposure. Thereby, the photoresist film 13 on the transfer target 1 is irradiated with the exposure light to form a region where the residual film is substantially not generated after the development (indicated by the hatching of A in FIG. 9). A region where a residual film of a predetermined amount of film is formed (shown by the hatching of B), and a region where the photoresist film is not exposed to light and a residual film of a thick film is formed after development (the hatching by C) In the case where the photoresist film 13 on the object to be transferred 1 on which the first exposure 111 and the second exposure 113 have been completed is developed, as shown in FIG. 9(c), it is transferred. The residual film portion 13a including the thick film, the residual film portion 13b of the film formed at both ends of the residual film portion 13a of the thick film, and the film thickness of the portion 1 3c having no residual film (substantially no residual film is formed) are formed on the body 1. A resist pattern that is stepwise and different (ie, has a step). -34- 200910021 That is, as the resist pattern formed at this time, it is possible to form a thick film portion 1 3 a, which is smaller than the residual film 显 after developing the photoresist on the transfer target The portion of the film portion 13b that is symmetrically held. According to the pattern forming method of the fifth embodiment described above, for example, when a transfer pattern having a residual film region of a film is formed at both ends or around the residual film region of the thick film, the use of the conventional gray scale mask can be avoided. In the case of the printing method, an asymmetrical pattern is generated as a cause of the problem due to the alignment deviation. In addition, the pattern can be easily formed even without using an exposure device having a very high image resolution and a large scale and high cost. Further, in the fifth embodiment, the relative movement between the transfer target and the photomask needs to be performed between the first exposure and the second exposure. However, since the alignment can be performed on the exposure device, the alignment can be performed with high precision. Positioning. The problem of alignment deviation that is inevitably caused by the use of multiple masks can be avoided. As a result, it is possible to easily and accurately form a resist pattern containing a resist residual film having a fine pattern width of, for example, 1 # m or less on the object to be transferred 1 . [Embodiment 6] Fig. 10 is a plan view showing a positional relationship between a photomask and a to-be-transferred body, showing a sixth embodiment of the pattern forming method of the present invention. However, for the sake of convenience, the position of the reticle 200 is shown as being shifted upward in the figure. The sixth embodiment is a pattern forming method of the invention described in claim 24 of the patent application. In the pattern forming method of the sixth embodiment, as shown in FIG. 1 , the mask 200 is placed at the first position above the transfer target 1 (the i-th (a) diagram), and the object to be transferred is placed. Exposure (first exposure) of the first pattern 210 of the mask 200 and the second -35-200910021 pattern 220 is simultaneously performed on one. Then, the distance between the mask 200 and the panel 1 to which the transfer target 1 is relatively moved by one (here, the distance of one pattern unit, the same applies hereinafter) is placed in the second position above the transfer target 1 (10th ( b) FIG.), and the first pattern 210 and the second pattern 220 are simultaneously exposed (second exposure) on the transfer target 1. Further, in the sixth embodiment, the distance between the mask 200 and the panel 1 is relatively moved (the 10th (c)), and the first pattern 210 is performed on the transfer target 1 And the second pattern 220 is simultaneously exposed, and the distance between the mask 200 and the panel 1 is relatively moved by one panel (Fig. 10(d)), and the first pattern is performed on the object to be transferred 1 The 210 and the second pattern 2 20 are simultaneously exposed, and a transfer pattern having three sides adhered to the transfer target 1 is formed. Here, it is preferable that a portion where the pattern is not formed in the mask 200 is a light-shielding portion. As described above, the first pattern 210 is repeatedly formed on the transfer target 1 while the photomask 200 on which the first pattern 210 and the second pattern 220 are formed is relatively moved with respect to the transfer target 1 at a distance of one panel at a time. And the L second pattern 220 is simultaneously exposed, whereby the exposure amount of the exposure light on the transfer target 1 is exposed depending on the portion by the overlap exposure of the first exposure and the second exposure to form a multi-gray transfer pattern. Further, the first pattern 210 and the second pattern 2 20' of the mask 200 are both on a transparent substrate. For example, in a quartz substrate or the like, a light-shielding film made of chromium (CO or the like) is formed into a predetermined pattern having a different pattern, and the first pattern 210 is composed of a light-shielding portion 21 1 and a light-transmitting portion 21 2 . The second pattern 220 is composed of a light shielding portion 221 and a light transmitting portion 222. The first pattern 210 and the second pattern 220 are adjacently formed on a transparent substrate. -36- 200910021 In the sixth embodiment The first exposure (the first exposure in the 10th (a) diagram) and the second exposure (the second exposure in the 10th (b) diagram) are equal exposure amounts. The third exposure in the 10th (c) and the 4th exposure in the 10th (d) are also equal exposures. Thus, one transfer pattern is formed by the first pattern 210 and 2. The pattern 2 20 is superimposed, that is, for example, the first exposure and the second exposure are overlapped. For example, when the photoresist film 13 on the transfer target 1 is a positive photoresist, the first exposure And the exposure amount of the second exposure is set to be an exposure of a residual film of a predetermined amount of the film after the photoresist film 13 on the transfer target 1 is developed, when exposed alone. In the region of the double exposure (overlap exposure) of the first exposure and the second exposure, the exposure amount of the residual film is substantially not generated after the photoresist film 13 on the transfer target 1 is developed. In the same manner as in the first embodiment, the i-line (3 6 5 nm) to g line (4 3 6 nm) used in the conventional exposure apparatus for liquid crystal displays can be used. In the form, for example, the distance between the photomask 200 and the panel of the transfer target 1 is changed by one panel at a time between the first exposure and the second exposure. However, in this case, the light may be made. The cover 20 0 moves in a predetermined direction and moves the transferred body 1 in the opposite direction. This is between the steps of the 10th (a)th and 10th (b), and the subsequent steps 10(b) and 10(c), the first (c) The same is true between the figure and the steps of the i〇(d) diagram. Regardless of which method is used, the alignment at this time can be accurately maintained by the positioning mechanism mounted on the exposure device. Further, although the relative movement amount per exposure is a distance from one panel, in the sixth embodiment, the first picture of the first picture is in the same manner as in the case of the second embodiment. Since the area width is formed adjacent to each other, for example, the distance of one panel is set so that the first pattern 210 is superimposed on the exposed area of the second pattern 2 20 on the transfer target 1 1 The width of the area of the pattern 210 (or the second pattern 220). In the arrangement of the mask 200 and the panel of the transfer target 1 shown in Fig. 10(a), when the first pattern 210 and the second pattern 2 20 of the mask 200 are simultaneously exposed, the object to be transferred is On the photoresist film 13 on the first surface 210, the first pattern 210 is exposed in the pattern forming region 1a, and the second pattern 220 is exposed in the adjacent pattern forming region lb. The amount of exposure of the photoresist film 13 from the first exposure is such that the photoresist film 13 develops an exposure amount of a residual film of a predetermined amount of the film. Then, the distance between the mask 200 and the to-be-transferred body 1 is relatively moved by one panel, and in the arrangement of the mask 200 and the object to be transferred 1 shown in FIG. 10(b), when the object is transferred again When the first pattern 210 and the second pattern 2 20 of the mask 200 are simultaneously exposed, the first pattern 210 is superimposed on the second pattern 2 20 which has been exposed in the pattern forming region 1b, and exposed. Further, the second pattern 220 is exposed in the adjacent pattern forming region lc. The exposure amount of the second exposure is also the exposure amount of the residual film of the film after the photoresist film 13 is developed, but in the pattern formation region lb, the first exposure and the second exposure. In the double-exposure region, the exposure amount of the residual film is substantially not generated after the irradiation of the photoresist film 13 is developed. Next, the distance of the mask 200 relative to the transfer target 1 by one panel is changed, and in the arrangement of the mask 200 and the object to be transferred 1 shown in FIG. 10(c), the object is transferred again. First, the first pattern -38 - 200910021 210 and the second pattern 220 of the mask 200 are simultaneously exposed. Then, the second light that has been exposed in the pattern forming region lc is first applied, and the adjacent pattern forming region Id is applied to the second, and then the mask 200 is applied to the transferred body 1 The distance between the mask 200 and the second pattern 220 is simultaneously applied to the transfer target 1 again in the mask 200 and the mask shown in Fig. 10(d). Then, the second pattern which has been exposed first in the pattern forming region Id, and the second pattern in the adjacent pattern forming region le as described above, the photomask 200 on which the first pattern 210 is formed is The transfer body 1 is repeatedly exposed on the transfer target 1 while being exposed to the second pattern 220 at a time. Thereby, in the region 1 b, 1 c, and 1 d of the transfer target, the photoresist film 13 is irradiated with the exposed second pattern 220 and the first pattern 210, and the area where the residual film is substantially not generated (10th) In the figure, A, the region of the residual film of a predetermined amount of film after development, and the photoresist film are substantially not exposed to the post-development area (shown by C pattern (white)). The first pattern 210 and the photoresist film 1 on the object to be transferred 1 that has been repeatedly exposed at the same time are formed with a residual film portion including a thick film and a film residue at both ends of the residual film portion of the film. The film thickness of the film portion and the portion where the residual film is generated is stepwise (that is, the exposure pattern 220 is exposed on the 1 pattern 2 1 0 overlap case 220. The first pattern of the surface transfer body 1 is moved to the ground. 210 pattern 210 is superimposed on 220 for exposure film 2200 exposure. And second pattern 220 is used to move each pattern-shaped light on the first patterns 210 and 1 of a panel, and thereby forming a post-development image ( All black) (as shown by the B graph) When the 2 pattern 220 of the residual film of the thick film is developed in the same line as I, in the case S remaining film formed on the thickness (substantially, with the step difference) -39-200910021 many gradations resist pattern. According to the pattern forming method of the sixth embodiment, for example, when the transfer pattern is formed by multi-face adhesion on the transfer target 1, the mask having the first pattern and the second pattern is formed on the object to be transferred. Each time the distance between one panel is relatively moved, the first pattern and the second pattern are repeatedly exposed on the transfer target. Therefore, when a plurality of exposures are performed, the moving distance when the transfer body and the mask are relatively moved between exposures can be shortened, and the alignment at this time can be accurately performed by the positioning mechanism mounted on the exposure device. It is maintained well, so positioning can be performed with high precision. Further, it is not necessary to shield either one of the first pattern and the second pattern by the shielding plate or the like during the exposure or to release the shielding. Therefore, it is possible to form a resist pattern having a desired step thickness and a plurality of gray scales on the substrate to be accurately formed. In addition, even if an exposure apparatus having a high image resolution and a large-scale and high-priced image is not used, it is possible to form a multi-gray step of, for example, a remnant film having a fine width of about 1 #m on the transfer target with high precision. Resist pattern. [Embodiment of the Invention] Fig. 1 is a plan view showing a positional relationship between a photomask and a to-be-transferred body in a seventh embodiment of the pattern forming method of the present invention. The seventh embodiment is also a pattern forming method of the invention according to claim 24. In the pattern forming method of the seventh embodiment, as shown in the figure, the mask 200 is placed at a predetermined position (the 11th (&) figure) above the transfer target}, and is applied to the transfer target 1 At the same time, exposure of the first pattern 21A and the second pattern 230 of the mask 2 is performed. Then, the reticle 2 移动 is moved to a panel by the transfer body -40 phase -4010010021 to the ground (here is the same under one pattern unit) (Fig. 11(b)), and is This is done on the transfer body 1! 210 and the second pattern 230 are exposed at the same time, and then the photomask 200 is relatively moved by a distance of one panel (Fig. u(c)), and the first pattern 210 and the second pattern 230 are performed on the body 1. The photomask 200 is relatively moved relative to the object to be transferred 1 (FIG. 11(d)), and the first pattern 2 pattern 230 is exposed on the object to be transferred 1 while being exposed. A three-sided printed pattern is formed on the body 1. In other words, the first pattern 210 and the second pattern mask 200 are formed, and the first pattern 210 and the second surface are simultaneously exposed on the object to be transferred 1 while the substrate 1 is moved relative to the object to be transferred 1 . Thereby, the first pattern 210 and the second overlap exposure are used to expose the exposed portion of the light to be irradiated on the object to be transferred 1 to form a multi-gray transfer pattern. However, in the seventh embodiment, the first portion of the mask 200 is a light-shielding pattern composed of the light-shielding portion 2 1 1 and the light-transmitting portion 2 1 2, and the pattern 23 0 is a light-shielding portion 231 and an exposure amount to be transmitted. The semi-transmissive portion 232 is configured to be reduced. The semi-transmissive portion 232 is formed of a semi-transmissive semi-transmissive film which reduces the light transmittance by -80% when the light transmittance of the exposure light of 212 is 100% (here as Set to 20% light transmittance). Further, the first patterns 210 and 230 are respectively formed adjacent to each other with the same region width in the transparent portion. In the seventh embodiment, the exposure amount at each exposure is equal, and the spring 1 pattern is transferred to be transferred. When exposed. The distance between the panel 210 and the attached transition 23 0, the pattern 230 pattern 230 the amount of radiation will be according to the pattern 210, but the second predetermined amount of the light transmitting portion is lower, for example, in 20 cases, for example, the second pattern S board . . In addition, -41 - 200910021, the amount of exposure once, when the photoresist film 13 on the transfer target 1 is a positive photoresist, is not generated after the photoresist film 13 is developed during the single exposure. The amount of exposure of the residual film. At this time, in the region where the first pattern 210 is exposed, the exposure amount of the residual film is not generated after the photoresist film 13 is irradiated, and the overlap between the first pattern 210 and the second pattern 230 is performed. In the region where the double exposure is performed, since the exposure amount becomes larger, substantially no residual film is generated after the photoresist film 13 is developed. On the other hand, the region exposed only by the second pattern 230 and transmitted through the semi-transmissive portion 23 2 is in the resist film 13 in response to the transmittance of the semi-transmissive film used in the semi-transmissive portion 232. A residual film is produced. The exposure wavelength at the time of the exposure is the same as that of the first embodiment, and a 1-line (365 nm) to g-line (436 nm) used in a conventional exposure apparatus for a liquid crystal display can be used. In addition, the second pattern 230 has a semi-transmissive portion 232 that reduces the amount of exposure that is transmitted by a predetermined amount. Therefore, when the first pattern 210 and the second pattern 230 are simultaneously exposed, the object to be transferred 1 is The 2 pattern 230 is irradiated with an exposure amount that is lower than a predetermined amount by the exposure amount of the first pattern 210. Further, in the seventh embodiment, the relative movement amount per exposure is one panel distance, but the mask 200 is on the transparent substrate such that the first pattern 210 and the second pattern 230 have the same area width. They are formed adjacent to each other, so the distance of one panel is set to the width of the area of the first pattern 2 1 0 (or the second pattern 23 0). In the arrangement of the mask 200 and the panel of the transfer target 1 shown in Fig. 1(a), when the first pattern 210 and the second pattern 230 of the mask 200 are simultaneously exposed, the object to be transferred is On the photoresist film 3 on the first side, 'the first pattern 210 is exposed in the pattern formation region la'. The second pattern 230 is exposed in the adjacent pattern formation region lb-42-200910021. Then, the distance between the mask 200 and the object to be transferred 1 is relatively moved by one panel, and in the arrangement of the mask 200 and the object to be transferred 1 shown in Fig. 1 (b), when it is transferred again When the first pattern 210 and the second pattern 230 of the mask 200 are simultaneously exposed on the body 1, the first pattern 210 is superposed on the second pattern 230 which has been exposed in the pattern forming region ib, and exposed. Further, the second pattern 230 is exposed in the adjacent pattern forming region lc. Then, 'the distance between the reticle 200 and the one to be moved relative to the to-be-transferred body 1' is 'in the arrangement of the reticle 200 and the object to be transferred 1 as shown in the 1st (1)th view' When the first pattern 210 and the second pattern 230 of the mask 2 are simultaneously exposed on the print 1, the first pattern 210 is superposed on the second pattern 230 which has been exposed in the pattern formation region lc for exposure. The second pattern 230 is exposed in the adjacent pattern forming region Id. Then, 'the distance between the reticle 200 and the one to be moved relative to the object to be transferred 1' is 'in the configuration of the reticle 200 and the object to be transferred 1 shown in FIG. 11(d)' When the first pattern 2 〇 and the second pattern 230 of the mask 200 are simultaneously exposed on the body 1, the first pattern 21 〇 is superposed on the second pattern 230 that has been exposed in the pattern forming region Id for exposure. The second pattern 230 is exposed in the adjacent pattern forming region le. When the photomask 200 in which the first pattern 210 and the second pattern 230 are formed is moved by one distance relative to the transfer target 1 once, the first pattern 21 is simultaneously repeated on the transfer target. 〇 and the exposure of the second pattern 230. Thereby, the photoresist film 3 is irradiated with exposure light on each of the pattern forming regions 1 b, 1 c, and 1 d on the object to be transferred 1, and the pattern 23 0 and the second portion are used by the second -43-200910021 pattern. 1 overlapping exposure of the pattern 210 to form a region where no residual film is produced on the image quality (the image of the residual film of a predetermined amount of film is produced by the A pattern (all black) in Fig. 11 (by the B pattern) The photoresist film and the photoresist film are substantially unexposed to produce a residual film domain of the thick film (shown by C pattern (white)), that is, by overlapping exposure of the second pattern 230 and the pattern 210. The double-exposed area and the area to be exposed only by the second film 210 are substantially exposed to the exposure of the photoresist film 13. The second pattern 230 is exposed only to the light. The resist film 13 is irradiated with a predetermined amount by a predetermined amount smaller than the first pattern 2 1 0. Therefore, a residual region having a film thickness different from each other is formed. Thereby, the second pattern 230 is appropriately adjusted by half. The light transmittance of the light portion and the amount of exposure at one time, for example, the exposure amount of the residual film is not 100% after the photoresist film 13 is developed. When the exposure amount is sequentially re-exposed, a residual film region of a predetermined amount of the residual film of the resist can be formed. The seventh embodiment has the following comparison with the sixth embodiment. In the sixth embodiment, the same amount is always used. The amount of exposure exposes the i-th and second patterns and forms a portion of the resist residual film that is zero by two exposures. In this case, no residual film is formed after the photoresist film 13 is developed. When the exposure amount is 100%, the amount of exposure of the residual film of the resist is limited to about 50% or more. Therefore, the sixth embodiment is to obtain a resist residue by an exposure amount smaller than about 50%. In contrast, in the seventh embodiment, the light transmittance of the semi-transmissive film used for the semi-transparent film can be selected to be formed by the exposure amount of 50%. ' ^ ) 'The area of Figure 11 is not exposed to the film; 232 Substantially reproduces the pattern of the essence of the essence of the pattern of the Department of Light Department -44- 200910021 Residual film. [Embodiment 8] FIG. 1 is a plan view showing an eighth embodiment of a pattern forming method according to the present invention, and is a plan view showing a positional relationship between a photomask and a to-be-transferred body. The eighth embodiment is also a pattern forming method of the invention described in claim 24. In the pattern forming method of the eighth embodiment, as shown in FIG. 2, the mask 200 is also placed at a predetermined position (i2 (a)) in the upper portion of the object to be transferred 1 and is in the transfer target 1 Exposure of the first pattern 210 and the second pattern 230 of the mask 200 is simultaneously performed. Then, the distance of the mask 200 relative to the object to be transferred 1 is relatively moved by one panel (here, the distance of one pattern unit, the same below) (Fig. 12(b)), and on the object to be transferred 1 The first pattern 210 and the second pattern 230 are simultaneously exposed, and the distance between the mask 200 and the substrate 1 is relatively moved by one panel (Fig. 12(c)), on the object to be transferred 1 The first pattern 210 and the second pattern 230 are simultaneously exposed. Further, the mask 200 is moved relative to the transfer target 1 by one panel (Fig. 12(d)), and the first pattern 210 and the second pattern 23 0 are simultaneously exposed on the transfer target 1. A transfer pattern having three faces attached to the transfer target 1 is formed. In other words, the first pattern 210 is repeatedly formed on the transfer target 1 with respect to the distance between the mask 200 on which the first pattern 210 and the second pattern 230 are formed, and the transfer target 1 is relatively moved by one panel at a time. And exposure of the second pattern 23 0 at the same time, whereby the exposure amount of the exposure light on the transfer target 1 varies depending on the portion -45-200910021 by the overlapping exposure of the first pattern and the second pattern Exposure to form a multi-gray transfer pattern. However, in the eighth embodiment, the first pattern 210 of the mask 200 is a light-shielding pattern formed by the light-shielding portion 211 and the light-transmitting portion 212. However, the second pattern 230 is exposed by the light-shielding portion 231 and the light-transmitting portion 231. The amount of the semi-transmissive portion 232 is reduced by a predetermined amount. The semi-transmissive portion 232 is a semi-transmissive semi-transparent film that reduces the light transmittance by, for example, 20 to 80% when the light transmittance of the light-transmitting portion 212 is 100%. Formed (for example, set to 50%). Further, the first pattern 210 and the second pattern 230 are adjacently formed on the transparent substrate with the same area width. In the eighth embodiment, the exposure amount at each exposure is equal. Further, in the case where the amount of exposure once is such that the photoresist film 13 on the transfer target 1 is a positive photoresist, the exposure amount of the residual film of a predetermined amount of the film is generated after the development of the photoresist film 13 is performed. Further, in the region where the double exposure is performed by the overlap exposure of the first pattern 210 and the second pattern 230, the exposure amount of the residual film is substantially not generated after the photoresist film 13 is developed. For example, when the exposure amount in which the residual film is not substantially generated after the development of the photoresist film 13 is 100%, the exposure amount is 80%. The exposure wavelength at the time of the exposure is the same as that of the first embodiment. For example, the i line (36511111) to the 2 line (43611111) used in the conventional exposure apparatus for liquid crystal display can be used. Further, the second pattern 230 has a semi-transmissive portion 232 that reduces the amount of exposure to be transmitted by a predetermined amount. Therefore, when the first pattern 210 and the second pattern 230 are simultaneously exposed, the transfer target 1 is The pattern 230 is irradiated with an exposure amount that is lower than a predetermined amount by the exposure amount of the first pattern 210. Further, in the eighth embodiment, the relative amount of the -46-200910021 movement amount is one panel distance, but the mask 200 is transparent to the first pattern 210 and the second pattern 230, respectively. Since the adjacent portion is formed, the number of panel portions is set to the width of the region of the second pattern 230) of Fig. 1 . In the surface of the mask 200 and the object to be transferred 1 shown in Fig. 12(a), when the first pattern 210 and the second line of the mask 200 are simultaneously exposed, light on the object 1 to be transferred is On the resist film 13, the first pattern 210 is exposed in the field la, and the second pattern 230 is exposed in the adjacent pattern shape. Then, the distance between the mask 200 and the body 1 is relatively moved by one panel, and in the arrangement of the object to be transferred 1 in the 12th (b) diagram, when the cover is again applied to the transfer body 1 The 1 pattern 210 and the second pattern 230 are exposed to the exposure day pattern 210 and exposed to the first exposure pattern lb. Further, the pattern 230 is exposed in the adjacent pattern forming region 2. Next, the distance between the mask 200 and the panel of the transfer target 1 is further changed to the light on the transfer target 1 in the mask 200 and the rotated configuration shown in FIG. 12(c). When the cover 210 and the second pattern 230 are exposed, the first pattern is lighted by the second pattern 230 that has been exposed in the pattern forming region lc, and the adjacent pattern forming region Id is directed to the second pattern 230. Further, the distance between the mask 200 and the object to be transferred 1 is relatively moved, and the mask 200 and the object to be transferred 1 shown in FIG. 12(d) are simultaneously irradiated to the object to be transferred 1 again. On the first substrate of the cover 200, the domain width is compared with the case 210 (or the configuration of the plate 230 is formed to form the area of the friend 1 b to be transferred to the mask 200 at the same time to the light temple, and the first second pattern 1 c is paired The first pattern 210 of the first movement of the first printing body 1 is superimposed and exposed for exposure. When the pattern 210-47-200910021 and the second pattern 230 are exposed in the arrangement of the first panel, the first pattern 2i is overlapped with The exposure is performed on the second pattern 230 in which the pattern formation region Id is exposed, and the second pattern 230 is exposed in the adjacent pattern formation region le. The first pattern 210 is simultaneously performed on the transfer target while the photomask 200 on which the first pattern 21 and the second pattern 230 are formed is moved relative to the transfer body 1 by one distance relative to each other. And exposing the second pattern 230. By using the pattern forming regions 1 b, 1 c, 1 d on the transfer target 1 to expose the photoresist film 13 to the exposure light, and by the second pattern 230 and The first pattern 210 is over-exposed to form a region in which substantially no residual film is generated after development (indicated by A pattern (all black) in FIG. 12), and a residual film of a predetermined amount of film is generated after development. Areas (shown by the patterns of Bi and B2, respectively), and areas where the photoresist film is not exposed to light and the residual film of the thick film is formed after development (indicated by C pattern (white)). The region which is double-exposed by the overlap exposure of the second pattern 230 and the first pattern 210 is substantially not exposed to the amount of exposure of the residual film after being irradiated by the resist film 13. Further, the first pattern 210 or A region in which either one of the second patterns 230 is exposed is irradiated with the photoresist film 13 to generate a predetermined amount of the film. Although the amount of exposure of the film is the same, the second pattern 205 is irradiated with the exposure amount by a predetermined amount smaller than the first pattern 210 with respect to the photoresist film 13. Therefore, a region in which a residual film having a different film thickness is formed is formed. Therefore, by appropriately adjusting the light transmittance of the semi-transmissive portion 232 of the second pattern 230 and the amount of exposure once, for example, the exposure amount of the residual film is substantially not generated after the photoresist film 13 is developed. In the case of a region irradiated with an exposure amount of 50% or more and less than 100%, and a residual film-48-200910021 region of two different film thicknesses in a region irradiated by an exposure amount of less than 50%. Then, when the photoresist film 13 on the object to be transferred 1 on which the first pattern 210 and the second pattern 230 are repeatedly exposed is developed, the film 1 is formed with a film portion including a thick film and a film. The residual film portion of the thickness difference 2 and the portion having no residual film (substantially no residual film) are stepped and different (that is, stepped) refractory patterns. Further, the present invention is not limited to the above embodiment. For example, in the figure, by forming a portion in which the semi-transmissive film is also formed in the first pattern 210, a resist pattern in which the residual film of the photoresist is different can be further formed. According to the pattern forming method of the above embodiment, for example, when the transfer pattern is formed by multi-face adhesion on the body, the distance between the shape 1 pattern and the second pattern mask for the transfer target with respect to one panel is made. The first second pattern is repeatedly exposed on the transfer target while being exposed. Therefore, when the exposure is performed a plurality of times, the movement of the transfer body and the reticle during the relative movement between the respective exposures is aligned at this time, and can be maintained by the positioning mechanism mounted on the exposure device. Positioning with high precision. In addition, it is not necessary to shield the first pattern and the second figure by a shielding plate or the like, or to cancel the shielding operation. Therefore, it is possible to accurately form a resist pattern having a desired film thickness in a stepwise manner and a plurality of gray scales (especially, four gray scales of two gray scales). Further, even in an exposure apparatus having a high degree of image resolution and a large-scale and high-priced, a resist pattern of a multi-gray scale containing, for example, a fine-width residual film of about 1 // m can be formed finely on the object to be transferred. At the same time, the film thickness of the film to be transferred is transferred to the ground moving pattern in the twelfth semi-transparent light, and the distance can be reduced, and the high precision is used. Resistor-49-200910021 [Brief Description of the Drawings] The first (a), (b), and (c) are cross-sectional views showing the pattern forming method of the third embodiment of the present invention in order of steps. Fig. 2 is a cross-sectional view showing the pattern forming method of the second embodiment of the present invention in order of steps. Fig. 3 is a cross-sectional view showing the pattern forming method of the third embodiment of the present invention in order of steps. Fig. 4 is a view showing the light intensity distribution of the light intensity distribution of the exposure light irradiated onto the object to be transferred according to the present invention. Fig. 5 is an explanatory view showing a light shielding pattern of the reticle of the present invention. Fig. 6(a) is a light intensity distribution diagram showing the results of the comparative example, and Fig. 6(b) is a plan view of the gray scale mask used in the comparative example. Fig. 7 is a cross-sectional view for explaining a pattern transfer method using a gray scale mask. Fig. 8 is a cross-sectional view showing the pattern forming method of the fourth embodiment of the present invention in order of steps. Fig. 9 is a cross-sectional view showing the pattern forming method of the fifth embodiment of the present invention in order of steps. Fig. 10 is a cross-sectional view showing the positional relationship between the mask for the pattern forming method and the object to be transferred in the sixth embodiment of the present invention. Figure 11 is a cross-sectional view showing the positional relationship between the mask and the object to be transferred for the pattern forming method according to the seventh embodiment of the present invention. Fig. 12 is a cross-sectional view showing the positional relationship between the mask and the object to be transferred for the pattern forming method according to the eighth embodiment of the present invention. -50- 200910021 [Explanation of main component symbols] 1 Replica 4 The mask 1 a , 1 b , 1 c , 1d, le pattern is formed into a defective product.  Domain 5,7,: B,100,200 Shield 9 a, 9 b , 9 c Area 11 Substrate 1 2A, 1 2B Laminated film 13 Photoresist film 13a Residual film portion of thick film 13b Residual film portion of film 13c 4τττ.  Part of the Yao residual film 20 Gray-scale mask 21, 21 1 , 221 ' 231 Light-shielding portion 22 ' 2 12 ' 222 Light-transmitting portion 23, 232 Semi-transmissive portion 24 Transparent substrate 25 Light-shielding film 26 Semi-transmissive film 30 is turned Printed body 3 1 substrate 32A, 32B film 33 resist pattern 5 1 , 71 , 8 1 transparent substrate 52, 54 area -51 - 200910021 53 ' 73 ' 83 first light-shielding pattern 55, 75, 85 second light-shielding pattern 61, 111 1st exposure 62 ' 112, 113 2nd exposure 82, 84 lap domain 102 shading pattern 210 1st pattern 220 > 230 2nd pattern 600 transparent substrate 610 shading part 620 semi-transmission part -52-

Claims (1)

200910021 十、申請專利範圍： 1. 一種圖案形成方法，其具有曝光步騾，係使用光罩，並 對被轉印體照射曝光光線，在該曝光步驟中依部位而選 擇性地減低對被轉印體之曝光光線的照射量，將被轉印 體上之光阻顯像後，形成包含殘膜値相異部分的所需轉 印阻劑圖案，其特徵爲： 該曝光步驟中所使用之光罩，係具有形成於同一透 明基板上之第1遮光圖案及與該第1遮光圖案不同之第2 遮光圖案， 在該曝光步驟中，使用該光罩之該第1遮光圖案， 於被轉印體上進行第1曝光，接著，使用該光罩之該第2 遮光圖案，與被轉印體上之該第1曝光重疊地進行第2 曝光’在被轉印體上進行曝光光線之照射量會依部位而 異的曝光。 2 ·如申請專利範圍第1項之圖案形成方法，其中該第1曝 光及該桌2曝光係相等之曝光量。 3 _如申請專利範圍第1項之圖案形成方法，其中該第1曝 光及該第2曝光係相異之曝光量。 4 ·如申請專利範圍第丨至3項中任一項之圖案形成方法， 其中該第1曝光及該第2曝光當中至少一方，係在單獨 地對被轉印體進行曝光時，被轉印體上之光阻顯像後會 產生規定量之殘膜的曝光量。 5.如申請專利範圍第4項之圖案形成方法，其中該第1曝 光之曝光量’係在單獨地對被轉印體進行曝光時，於被 -53- 200910021 轉印體上之光阻顯像後實質上不會產生殘膜的曝光量， 該第2曝光之曝光量，係在單獨地對被轉印體進行曝光 時，於被轉印體上之光阻顯像後會產生該規定量的殘膜 之曝光量。 6.如申請專利範圍第4項之圖案形成方法，其中該第1曝 光之曝光量，係在單獨地對被轉印體進行曝光時，於被 轉印體上之光阻顯像後會產生該規定量的殘膜之曝光量 ，該第2曝光之曝光量，係在單獨地對被轉印體進行曝 光時，於被轉印體上之光阻顯像後實質上不會產生殘膜 的曝光量。 7 ·如申請專利範圍第4項之圖案形成方法，其中該第1曝 光及第2曝光之曝光量，均係在單獨地對被轉印體進行 曝光時，於被轉印體上之光阻顯像後會產生該規定量的 殘膜之曝光量。 8 .如申請專利範圍第1項之圖案形成方法，其中藉由使被 轉印體在該第1曝光及該第2曝光之間移動，依序使該 第1遮光圖案及該第2遮光圖案對於被轉印體成爲相對 地相同之位置。 9 ·如申請專利範圍第1項之圖案形成方法，其中藉由使光 罩在該第1曝光及該第2曝光之間移動，依序使該第1 遮光圖案及該第2遮光圖案對於被轉印體成爲相對地相 同之位置。 1 0 如申請專利範圍第1項之圖案形成方法，其中該第1遮 光圖案之遮光部與透光部的境界位置x、和該第2遮光圖 -54- 200910021 案之遮光部與透光部的境界位置y之相隔距離，在該第} 遮光圖案與該第2遮光圖案重疊時，爲2/zm以上。 1 1 . 一種薄膜電晶體基板之製造方法，其包含使用如申請專 利範圍第1至1 〇項中任一項之圖案形成方法的圖案形成 步驟。 12. —種液晶顯示裝置之製造方法，其包含使用如申請專利 範圍第1至1 0項中任一項之圖案形成方法的圖案形成步 驟。 13. —種光罩，係具有至少2個遮光圖案，該等遮光圖案係 於同一基板上把握相對位置，依序於相同之被轉印體上 進行轉印，藉以形成一個多重轉印圖案，其特徵爲：該2 個遮光圖案，係在重疊地照射曝光光線時，當曝光光線 之透光量成爲最大時的透光區域之透光率設爲100%時， 具有透光率成爲20〜60 %的半透光區域及透光率實質上 成爲0 %的遮光區域。 1 4 . 一種光罩，係在使用光罩，並對被轉印體照射曝光光線 時，依部位而選擇性地減低對被轉印體之曝光光線的照 射量，於被轉印體上之光阻上形成包含殘膜値相異部分 的所需轉印圖案’其特徵爲： 該光罩係具有形成於同一透明基板上之第1遮光圖 案及與該第1遮光圖案不同之第2遮光圖案’ 且在以對於被轉印體成爲相對地相同位置的方式依 序配置該光罩之該第1遮光圖案及該第2遮光圖案並進 行曝光時，在被轉印體上形成曝光量會依部位而異之轉 -55- 200910021 印圖案。 15.如申請專利範圍第13或14項之光罩’其中該第1遮光圖 案之遮光部與透光部的境界位置X、和該第2遮光圖案之 遮光部與透光部的境界位置y之相隔距離，在該第1遮 光圖案與該第2遮光圖案重疊時，爲2//m以上。 1 6. —種圖案形成方法，其具有曝光步驟’係使用具有遮光 部及透光部之光罩，並對被轉印體照射曝光光線，在該 曝光步驟中依部位而選擇性地減低對被轉印體之曝光光 線的照射量，於被轉印體上之光阻形成包含殘膜値相異 部分的所需轉印圖案，其特徵爲： 在該曝光步驟中，使用形成於該光罩上之遮光圖案 ，在被轉印體上進行第1曝光，接著，改變曝光光線之 聚焦（focusing)條件，於該被轉印體上使用該遮光圖案進 行第2曝光， 藉由改變該第1曝光及該第2曝光之曝光光線的聚 焦條件’於被轉印體上進行曝光光線之照射量會依部位 而異的曝光。 1 7 ·如申請專利範圍第1 6項之圖案形成方法，其中該第1曝 光及該第2曝光當中至少一方，係在單獨地對被轉印體 進行曝光時，於被轉印體上之光阻顯像後會產生規定量 之殘膜的曝光量。 18. —種光罩，係具有多重轉印用圖案，其於透明基板上具 有遮光部及透光部，藉由以不同之聚焦條件，依序於相 同之被轉印體上進行多次轉印，而形成一個多重轉印圖 -56- 200910021 案’其特徵爲：該多重轉印圖案係在對被轉印體上之光 阻進行顯像時’以具有第2阻劑殘膜値部分夾著第1阻 劑殘膜値部分之部分的方式形成阻劑圖案。 1 9 ·如申請專利範圍第丨8項之光罩，其中該第1阻劑殘膜値 部分係阻劑殘膜値最大之部分，該第2阻劑殘膜値部分 係殘膜値比第1阻劑殘膜値部分小的部分。 20.—種圖案形成方法，其具有曝光步驟，係使用具有具遮 光部及透光部之遮光圖案的光罩，並對被轉印體照射曝 光光線’在該曝光步驟中依部位而選擇性地減低對被轉 印體之曝光光線的照射量，於被轉印體上之光阻形成包 含殘膜値相異部分的所需轉印圖案，其特徵爲： 在該曝光步驟中’將該光罩之該遮光圖案配置於該 被轉印體上之第1位置，在該被轉印體上進行第1曝光 ，接著’使該遮光圖案對於該被轉印體相對移動規定距 離而配置於該被轉印體上之第2位置，於該被轉印體上 進行第2曝光， 藉由該第1曝光及該第2曝光之重疊曝光，於被轉 印體上進行曝光光線之照射量會依部位而異的曝光。 2 1.如申g靑專利範圍第2 0項之圖案形成方法，其中該第1曝 光及S亥桌2曝光當中至少一方’係在單獨地對被轉印體 進行曝光時’於被轉印體上之光阻顯像後會產生規定量 之殘膜的曝光量。 22. —種光罩，係具有多重轉印用圖案，其於透明基板上具 有遮光部及透光部，對相同之被轉印體，配置於不同之 -57- 200910021 相對位置，依序進行多次轉印，藉以形成一個多重轉印 圖案，其特徵爲：該多重轉印圖案係在對被轉印體上之 光阻進行顯像時，以具有第2阻劑殘膜値部分夾著第1 阻劑殘膜値部分之部分的方式形成阻劑圖案。 23. 如申請專利範圍第22項之光罩，其中該第1阻劑殘膜値 部分係阻劑殘膜値最大之部分，該第2阻劑殘膜値部分 係殘膜値比第1阻劑殘膜値部分小的部分。 24. —種圖案形成方法，其具有曝光步驟，係使用光罩，並 對被轉印體照射曝光光線，在該曝光步驟中依部位而選 擇性地減低對被轉印體之曝光光線的照射量，於被轉印 體上之光阻形成包含殘膜値相異部分的所需轉印圖案， 其特徵爲： 該曝光步驟中所使用之光罩，係具有形成於同一透 明基板上之第1圖案及與該第1圖案不同之第2圖案， 在該曝光步驟中包含：將該光罩配置於該被轉印體 上方之第1位置，在該被轉印體上同時對該第1圖案及 第2圖案進行第1曝光，接著，使該光罩對於被轉印體 相對移動1個圖案單位之距離而配置於該被轉印體上方 的第2位置，於該被轉印體上同時對該第1圖案及該第2 圖案進行第2曝光的步驟， 藉由該第1圖案及該第2圖案係在被轉印體上相對 地處於相同之位置被轉印，而於被轉印體上進行曝光光 線之照射量會依部位而異的曝光。 25 ·如申請專利範圍第24項之圖案形成方法，其中重複進行 -58- 200910021 一面使該光罩對於被轉印體進一步以每一次1個圖案單 位之距離進行相對移動，一面於該被轉印體上同時對該 第1圖案及該第2圖案進行曝光的步驟。 26.如申請專利範圍第24或25項之圖案形成方法，其中該 第1曝光及該第2曝光係相等之曝光量。 2 7 .如申請專利範圍第2 4或2 5項之圖案形成方法，其中該 第1圖案及該第2圖案均係由遮光部及透光部所構成之 遮光圖案。 28.如申請專利範圍第24或25項之圖案形成方法，其中該 第1圖案及該第2圖案當中至少一方，係包含遮光部及 將透過之曝光量減低規定量的半透光部之圖案。 2 9. —種光罩，係在使用光罩，並對被轉印體照射曝光光線 時，依部位而選擇性地減低對被轉印體之曝光光線的照 射量，於被轉印體上之光阻形成包含殘膜値相異部分的 所需轉印圖案，其特徵爲： 該光罩係具有形成於同一透明基板上之第1圖案及 與該第1圖案不同之第2圖案， 該第1圖案及該第2圖案當中至少一方，係包含遮 光部及將透過之曝光量減低規定量的半透光部之圖案， 且在以對於被轉印體成爲相對地相同位置的方式依 序配置該光罩之該第1圖案及該第2圖案並進行曝光時 ，在被轉印體上形成曝光量會依部位而異之轉印圖案。 30.如申請專利範圍第29項之光罩’其中一面使該光罩對於 該被轉印體以每一次1個圖案單位之距離進行相對移動 -59- 200910021 ，一面重複地於該被轉印體上同時對該第1圖案及第2 圖案進行曝光，藉此而在被轉印體上形成曝光量會依部 位而異之多灰階轉印圖案。 (200910021 X. Patent application scope: 1. A pattern forming method, which has an exposure step, uses a photomask, and irradiates the object to be transferred with exposure light, and selectively reduces the rotation according to the position in the exposure step. The exposure amount of the exposure light of the printed body is developed by the photoresist on the transfer target, and then a desired transfer resist pattern including the residual portion of the residual film is formed, which is characterized in that: The photomask has a first light-shielding pattern formed on the same transparent substrate and a second light-shielding pattern different from the first light-shielding pattern, and the first light-shielding pattern of the photomask is used in the exposure step. The first exposure is performed on the printed body, and then the second light-shielding pattern of the photomask is used to perform the second exposure on the transfer target, and the exposure light is irradiated onto the transfer target. The amount will vary depending on the location. 2. The pattern forming method of claim 1, wherein the first exposure and the exposure of the table 2 are equal exposure amounts. The method of forming a pattern according to the first aspect of the invention, wherein the first exposure and the second exposure are different exposure amounts. The method of forming a pattern according to any one of the preceding claims, wherein at least one of the first exposure and the second exposure is transferred when the object to be transferred is separately exposed. The exposure of the photoresist on the body produces a predetermined amount of residual film exposure. 5. The pattern forming method according to claim 4, wherein the exposure amount of the first exposure is a light resistance display on the transfer body of -53-200910021 when the object to be transferred is separately exposed. The amount of exposure of the residual film does not substantially occur after the image is formed, and the exposure amount of the second exposure is generated after the photoreceptor on the transfer target is developed when the transfer target is separately exposed. The amount of exposure of the residual film. 6. The pattern forming method of claim 4, wherein the exposure amount of the first exposure is generated after exposure of the photoresist on the transfer target when the transfer target is separately exposed. The exposure amount of the predetermined amount of the residual film and the exposure amount of the second exposure are substantially no residual film after the photoresist is developed on the transfer target when the transfer target is separately exposed. The amount of exposure. 7. The pattern forming method of claim 4, wherein the exposure amount of the first exposure and the second exposure is a photoresist on the transfer target when the transfer target is separately exposed. The exposure amount of the predetermined amount of residual film is generated after development. 8. The pattern forming method according to claim 1, wherein the first light-shielding pattern and the second light-shielding pattern are sequentially sequentially moved by the transfer target between the first exposure and the second exposure. The transferred body is relatively the same position. 9. The pattern forming method according to claim 1, wherein the first light-shielding pattern and the second light-shielding pattern are sequentially pressed by moving the mask between the first exposure and the second exposure. The transfer bodies are in the same position. The pattern forming method of the first aspect of the invention, wherein the light-shielding portion of the first light-shielding pattern and the boundary position x of the light-transmitting portion, and the light-shielding portion and the light-transmitting portion of the second light-shielding sheet-54-200910021 The distance between the boundary positions y is 2/zm or more when the first light-shielding pattern overlaps with the second light-shielding pattern. A method of producing a thin film transistor substrate, comprising the pattern forming step of using the pattern forming method according to any one of claims 1 to 1. A method of producing a liquid crystal display device comprising the pattern forming step using the pattern forming method according to any one of the first to tenth aspects of the patent application. 13. A reticle having at least two opaque patterns, wherein the opaque patterns are held on the same substrate to grasp relative positions, and are sequentially transferred onto the same transfer body to form a multiple transfer pattern. It is characterized in that the two light-shielding patterns have a light transmittance of 20% when the light transmittance of the light-transmitting region is 100% when the light-transmitting amount of the exposure light is maximum when the exposure light is superimposed. 60% of the semi-transmissive region and the light transmittance are substantially 0% of the light-shielding region. 1 4 . In the case of using a photomask and irradiating the object to be transferred with exposure light, the amount of exposure to the exposure light of the object to be transferred is selectively reduced depending on the portion, and is applied to the object to be transferred. A desired transfer pattern including a residual portion of the residual film is formed on the photoresist. The reticle has a first light-shielding pattern formed on the same transparent substrate and a second light-shielding different from the first light-shielding pattern. When the first light-shielding pattern and the second light-shielding pattern of the mask are sequentially placed in such a manner that the light-receiving body is relatively at the same position, and the exposure is performed, an exposure amount is formed on the transfer target. Depending on the location -55- 200910021 Printed. 15. The photomask of claim 13 or 14, wherein a boundary position X between the light shielding portion and the light transmitting portion of the first light shielding pattern, and a boundary position y between the light shielding portion and the light transmission portion of the second light shielding pattern The distance between the first light-shielding patterns and the second light-shielding pattern is 2//m or more. 1 6. A pattern forming method having an exposure step of using a mask having a light shielding portion and a light transmission portion, and irradiating the object to be transferred with exposure light, and selectively reducing the portion according to the portion in the exposure step The irradiation amount of the exposure light of the transfer target, the photoresist on the transfer target forms a desired transfer pattern including the residual portion of the residual film, and is characterized in that, in the exposure step, the light is formed in the exposure step. a light-shielding pattern on the cover, performing a first exposure on the transfer target, and then changing a focusing condition of the exposure light, and performing the second exposure on the transfer target using the light-shielding pattern, by changing the first 1 Exposure and Focusing Conditions of Exposure Light of the Second Exposure 'The exposure amount of the exposure light on the transfer target varies depending on the location. The method of forming a pattern according to claim 16 wherein at least one of the first exposure and the second exposure is on the transfer target when the transfer target is separately exposed. After the photoresist is developed, a predetermined amount of residual film exposure amount is generated. 18. A reticle having a multi-transfer pattern having a light-shielding portion and a light-transmitting portion on a transparent substrate, and performing multiple rotations on the same transfer target by different focusing conditions Printing, forming a multiple transfer pattern -56-200910021 'characterized by: the multiple transfer pattern is developed when the photoresist on the transferred body is developed' to have the second resist residual film portion A resist pattern is formed in such a manner as to sandwich a portion of the first resist residual film portion. 1 9 · If the photomask of claim No. 8 is applied, wherein the first resist residue is the largest part of the residual film residual agent, the second resist residual film is the residual film ratio 1 part of the small part of the residual agent. 20. A pattern forming method having an exposure step of using a mask having a light-shielding pattern having a light-shielding portion and a light-transmitting portion, and irradiating the object to be transferred with exposure light 'selectively in the exposure step The amount of exposure to the exposure light of the object to be transferred is reduced, and the photoresist on the object to be transferred forms a desired transfer pattern including a portion of the residual film, which is characterized in that: The light-shielding pattern of the photomask is disposed at the first position on the transfer target, and the first exposure is performed on the transfer target, and then the light-shielding pattern is disposed to move relative to the transfer target by a predetermined distance. The second position on the transfer target is subjected to the second exposure on the transfer target, and the exposure of the exposure light is performed on the transfer target by the overlap exposure of the first exposure and the second exposure. Will vary depending on the location. 2 1. The pattern forming method of claim 20, wherein at least one of the first exposure and the S-table 2 exposure is 'transferred when the object to be transferred is separately exposed. The exposure of the photoresist on the body produces a predetermined amount of residual film exposure. 22. A reticle having a multi-transfer pattern having a light-shielding portion and a light-transmitting portion on a transparent substrate, and arranging the same transferable body at a relative position of -57-200910021, sequentially Multiple transfer, thereby forming a multiple transfer pattern, characterized in that the multiple transfer pattern is sandwiched by the second resist residual film when the photoresist on the transferred body is developed The resist pattern is formed in such a manner that part of the first resist residual film portion. 23. The photomask of claim 22, wherein the first resist residual film portion is the largest part of the residual agent residual film, and the second resist residual film portion is the residual film tantalum ratio first resistance Part of the small portion of the residual film. 24. A pattern forming method having an exposure step of using a photomask and irradiating an object to be transferred with exposure light, wherein in the exposing step, selectively irradiating the exposure light of the object to be transferred The amount of the photoresist on the transferred body forms a desired transfer pattern including the residual portion of the residual film, and is characterized in that: the photomask used in the exposure step has the same shape formed on the same transparent substrate. 1 pattern and a second pattern different from the first pattern, the exposure step includes: arranging the mask at a first position above the transfer target, and simultaneously applying the first to the transfer target The pattern and the second pattern are subjected to the first exposure, and then the mask is placed at a second position above the transfer target by moving the transfer target by a distance of one pattern unit, on the transfer target At the same time, the first pattern and the second pattern are subjected to the second exposure step, and the first pattern and the second pattern are transferred to the transfer target body at the same position, and are transferred. The amount of exposure light on the print will vary depending on the location. Exposure. [25] The pattern forming method of claim 24, wherein the mask is repeatedly moved to the transferred body by a relative distance of one pattern unit at a time, and is rotated at the same time as -58-200910021. The step of exposing the first pattern and the second pattern to the print simultaneously. 26. The pattern forming method of claim 24, wherein the first exposure and the second exposure are equal exposure amounts. The method of forming a pattern according to claim 24 or 25, wherein the first pattern and the second pattern are each a light-shielding pattern composed of a light-shielding portion and a light-transmitting portion. 28. The pattern forming method according to claim 24, wherein at least one of the first pattern and the second pattern includes a light shielding portion and a pattern of a semi-transmissive portion that reduces a light exposure amount by a predetermined amount. . 2 9. A type of reticle is used to selectively reduce the amount of exposure light to the object to be transferred to the object to be transferred when the illuminating body is irradiated with the illuminating light. The photoresist forms a desired transfer pattern including a residual portion of the residual film, wherein the mask has a first pattern formed on the same transparent substrate and a second pattern different from the first pattern. At least one of the first pattern and the second pattern includes a light-shielding portion and a pattern of a semi-transmissive portion that reduces the amount of exposure that is transmitted by a predetermined amount, and is sequentially positioned at the same position with respect to the object to be transferred. When the first pattern and the second pattern of the mask are placed and exposed, a transfer pattern in which the amount of exposure varies depending on the portion is formed on the transfer target. 30. The reticle of claim 29, wherein one side of the reticle is relatively moved to the transfer body at a distance of one pattern unit per time - 59- 200910021, and is repeatedly transferred The first pattern and the second pattern are simultaneously exposed to the body, whereby a gray scale transfer pattern having a different exposure amount depending on the portion is formed on the transfer target. ( -60--60-
TW097123900A 2007-07-12 2008-06-26 Pattern forming method, method of manufacturing a thin-film transistor substrate, method of manufacturing a liquid crystal display, and photomask TW200910021A (en)

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US8860026B2 (en) 2009-07-06 2014-10-14 Au Optronics Corporation Thin film transistor array and method for manufacturing the same

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JP5937873B2 (en) * 2011-04-13 2016-06-22 Hoya株式会社 Photomask substrate set, photomask set, and pattern transfer method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8860026B2 (en) 2009-07-06 2014-10-14 Au Optronics Corporation Thin film transistor array and method for manufacturing the same
TWI463659B (en) * 2009-07-06 2014-12-01 Au Optronics Corp Thin film transistor array and manufacturing method thereof
US9048290B2 (en) 2009-07-06 2015-06-02 Au Optronics Corporation Method for manufacturing thin film transistor array

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