TW200908108A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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TW200908108A
TW200908108A TW097116513A TW97116513A TW200908108A TW 200908108 A TW200908108 A TW 200908108A TW 097116513 A TW097116513 A TW 097116513A TW 97116513 A TW97116513 A TW 97116513A TW 200908108 A TW200908108 A TW 200908108A
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Taiwan
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substrate
surface tension
solvent
low surface
liquid
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TW097116513A
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Chinese (zh)
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TWI436413B (en
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Tomonori Kojimaru
Katsuhiko Miya
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Dainippon Screen Mfg
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

Abstract

After the rinsing processing is completed, the rotation speed of the substrate is reduced from 600 rpm to 10 rpm to form a puddle-like DIW liquid film. After the supply of DIW is stopped, the control unit waits for a predetermined time (0.5 seconds) so that the film thickness t1 of the puddle-like liquid film becomes approximately uniform. Then, IPA is discharged to a central part of the surface of the substrate at a flow rate of 100 (mL/min) for instance. By the supply of IPA, DIW is replaced with IPA at the central part of the surface of the substrate to form a replaced region. Further, after three seconds of IPA supply, the rotation speed of the substrate is accelerated from 10 rpm to 300 rpm. This causes the replaced region to expand in a radial direction of the substrate so that the entire surface of the substrate is replaced with the low surface-tension solvent.

Description

200908108 九、發明說明： 【發明所屬之技術領域】 本發明係關於-種於向基板表面供給處理液而對該基板 表面實施特定之濕式處理後，使經處理液潤濕之基板表面 乾燥的基板處理裝置及基板處理方法。再者，作為乾燥處 * ㈣象之基板包括半導體晶圓、光罩用玻璃基板、液晶: 、 示用玻璃基板、電漿顯示用玻璃基板、FED(場發射顯示 器：FieM Emission Display)用基板、光碟用基板、磁碟用 () 基板、磁光碟用基板等。 【先前技術】 於進行藉由藥液之藥液處理及藉由純水等清洗液之清洗 處理之後，為去除附著於基板表面之清洗液，先前提出有 多種乾燥方法。作為上述方法中之-種，眾所周知有使用 含有表面張力低於純水的IPA(異丙醇：心㈣ 等有機溶劑成分之液體(低表面張力溶劑)之乾燥方法。作 &該乾燥方法’有例如專利文獻丨中所記載之乾燥方法。 〇 ☆執㈣㈣方法之基«縣置巾，㈣基板表面進行 了氟酸處理之後’向基板表面供給純水以實施洗淨處理 -(清洗處理）。繼而，於停止供給純水後不中斷地向基板表 面供給IPA，或者自純水供給之中途向基板表面供給ιρΑ。 藉此，IPA溶解於基板表面上之純水，從而藉由ιρΑ來置換 純水。之後，藉由使基板高速旋轉而自基板表面去除 ΙΡΑ，以進行基板表面之乾燥處理。 又，於專利文獻2所記載之抗蚀劑顯影方法中，以如下 129875.doc 200908108 方式實現基板表面上之微細廢棄物量之減少，並且使基板 表面乾燥。首先，於抗蝕劑顯影後向基板供給純水，進行 純水洗淨（清洗處理）^之後，向基板供給按容量比計包含 10%左右之IPA之純水（IPA水溶液）而進行基板之洗淨。繼 而’一面使基板高速旋轉一面使基板旋轉乾燥。 [專利文獻1]日本專利特開平9_38595號公報（圖5) [專利文獻2]日本專利特開平3_2〇9715號公報（圖i) 【發明内容】。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Substrate processing apparatus and substrate processing method. Further, the substrate to be dried (4) includes a semiconductor wafer, a glass substrate for a photomask, a liquid crystal: a glass substrate for display, a glass substrate for plasma display, and a substrate for FED (field emission display: FieM Emission Display). A substrate for a disc, a substrate for a magnetic disk, a substrate for a magneto-optical disk, or the like. [Prior Art] A plurality of drying methods have been proposed in order to remove the cleaning liquid adhering to the surface of the substrate after the chemical liquid treatment by the chemical liquid and the cleaning liquid such as pure water. As a kind of the above-mentioned method, a drying method using a liquid (low surface tension solvent) containing an organic solvent component such as IPA (isopropyl alcohol: core (tetra)) having a surface tension lower than pure water is known. For example, the drying method described in the patent document 。 执 执 ( 四 四 四 四 四 四 四 四 四 四 四 四 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县Then, after the supply of the pure water is stopped, the IPA is supplied to the surface of the substrate without interruption, or the surface of the substrate is supplied with ιρΑ from the supply of the pure water. Thereby, the IPA is dissolved in the pure water on the surface of the substrate, thereby being replaced by ιρΑ. After the high-speed rotation of the substrate, the crucible is removed from the surface of the substrate to dry the surface of the substrate. Further, in the resist development method described in Patent Document 2, the following method is implemented as 129875.doc 200908108. The amount of fine waste on the surface of the substrate is reduced, and the surface of the substrate is dried. First, pure water is supplied to the substrate after development of the resist, and pure water is supplied. After the cleaning (cleaning treatment), the substrate is washed with pure water (IPA aqueous solution) containing about 10% by volume of the capacity ratio, and then the substrate is rotated while the substrate is rotated at a high speed. Japanese Patent Laid-Open Publication No. Hei 9-38595 (FIG. 5) [Patent Document 2] Japanese Patent Laid-Open No. Hei.

[發明所欲解決之問題] 然而，上述先則技術中，係一面以中速（例如專利文獻^ 中為300 rpm，專利文獻2中為5〇〇 rpm)使基板旋轉，一面 向該基板表面供給清洗液而進行清洗處理。又，於繼清洗 ，理之後的置換處理中’在原樣維持基板之旋轉速度之狀 悲下向基板表面大量地供給IPA或IpA水溶液等低表面張力 溶劑，從而以短時間將基板上之清洗液置換為低表面張力 洛劑。因此’先前技術中存在下述問題，％，低表面張力 溶劑之使用量較多，從而導料轉成本增大。因此，正研 究使低表面張力溶劑之流量降低以削減低表面張力溶劑之 使用量。 然而，若使低表面張力溶劑之流量降低，則向低表面張 力冷Μ之置換只能緩慢進行，從而有時會因馬蘭哥尼對流 (marangoni convecti〇n)而導致基板表面局部地乾燥。一面 參照圖1〇一面簡單說明此情形。於開始供給IPA等低表面 張力/合劑之初始階段，如1〇⑷所示，Μ等低表面張力 129875.doc 200908108 溶劑被供給至基板w之表面中央部，形成由低表面張力溶 劑形成之置換區域SR。此時，低表面張力溶劑之_部分於 基板表面Wf上飛濺而飛散至置換區域SR之周圍，或者蒸 發的低表面張力溶劑成分擴散至置換區域SR之周圍，從而 有時會混入至置換區域周圍之清洗液内。尤其於先前技術 中，如上所述係將基板w之旋轉速度維持為中速，故液膜 之厚度相對較薄。因此，於混入有低表面張力溶劑之液膜 部分MR，低表面張力溶劑之濃度變高，其結果，如圖 10(b)所示，於混入部分MR產生馬蘭哥尼對流，從而導致 基板表面Wf被局部地乾燥，從而有時會產生水印 (watermark)等不良狀況。 本發明係有鑒於上述課題而完成者，其目的在於，使用 IPA等低表面張力溶劑使經處理液潤濕之基板表面乾燥的 基板處理裝置及基板處理方法中，以較少之低表面張力溶 劑使基板表面良好地乾燥。 [解決問題之技術手段] 為了達成上述目的，本發明之基板處理方法，其特徵在 於包括：濕式處理步驟，其係一面使大致水平狀態之基板 以第1速度旋轉，一面使用處理液對基板表面實施濕式處 理；槳形成步驟，其係使基板之旋轉速度減速至第2速 度，從而使處理液之液膜呈紫狀形成於基板上；置換區域 形成步驟，其係一面將基板之旋轉速度維持於第2速度以 下，一面將表面張力低於處理液之低表面張力溶劑供給至 基板之表面中央部，從而形成低表面張力溶劑之置換區 129875.doc 200908108 域；置換步驟，其係將低表面張力溶劑供給至表面中央 部，使置換區域沿基板之徑向擴大，從而將整個基板表面 置換為低表面張力溶劑；及乾燥步驟，其係於置換步驟 後’自基板表面去除低表面張力溶劑，使該基板表面乾 燥。 又為了達成上述目的，本發明之基板處理裝置，係於 對基板表面使用有處理液之濕式處理後，利用表面張力低 於處理液之低表面張力溶劑來置換基板表面上之處理液 、 後’自基板表面絲低表面張力溶劑，使基板表面乾燥， 其特徵在於包括：基板保持機構，其係以大致水平姿勢保 持基板；基板旋轉機構，其係使保持於基板保持機構之基 板繞特定之旋轉軸而旋轉；供給機構，其係將低表面張力 溶劑供給至保持於基板保持機構之基板的表面中央部；及 控制機構，其係控制基板旋轉機構以調整基板之旋轉速 度，控制機構將濕式處理中之旋轉速度設定為第丨速度， 另一方面，於低表面張力溶劑之供給前使旋轉速度減速至 第2速度，從而使處理液之液膜呈槳狀形成於基板上丨供 給機構在基板之旋轉速度維持於第2速度以下的狀態下， 供給低表面張力溶劑，以於基板之表面中央部形成低表面 張力溶劑之置換區域，繼而將低表面張力溶劑供給至置換 區域，使置換區域沿基板之徑向擴大，從而將整個基板表 面置換為低表面張力溶劑。 以上述方式構成之發明（基板處理方法及裝置）中，以第 1速度使呈大致水平狀態之基板旋轉，並且使用處理液對 129875.doc 200908108 該基板表面實施清洗處理等濕式處理。之後，使基板之旋 轉速度減速至弟2速度（<第1速度）’從而使處理液之液膜 呈槳狀形成於基板上。於該狀態下，將表面張力低於處理 液之低表面張力溶劑供給至基板之表面中央部，藉此於基 板表面之中央部形成由低表面張力溶劑形成之置換區域 (置換區域形成步驟）。繼而，將低表面張力溶劑進一步供 給至表面十央部，使置換區域沿基板之徑向擴大，從而將 整個基板表面置換為低表面張力溶劑（置換步驟）^之後， 自基板表面去除低表面張力溶劑，使該基板表面乾燥。如 此，一面控制置換區域之形成及擴大，一面將整個基板表 面置換為低表面張力溶劑，因此與向基板表面供給大量低 表面張力溶劑而一口氣地將整個基板表面置換為低表面張 力溶劑的先前技術相比，可減少低表面張力溶劑之使用 量。 此處’當形成置換區域時’低表面張力溶劑會混入至置 換區域之周圍而有可能產生馬蘭哥尼對流，但由於係以上 述方式對基板之旋轉速度進行控制，因此可控制馬蘭哥尼 對流之產生。亦即，本發明中，為了 一面使基板旋轉一面 形成紫狀之液膜’而以如下方式來設定第2速度（亦包含 零），即’使作用於處理液之離心力小於作用於處理液與 基板表面之間的表面張力。因此，藉由將基板之旋轉速度 維持於第2速度以下，基板表面上之液膜會變得較濕式處 理時更厚。並且，由於係於該狀態下進行置換區域之情 形’因此即便低表面張力溶劑混入至置換區域之周圍，但 129875.doc 200908108 因液臈與先前技術相比變厚，因而可抑制混入位置處之馬 蘭哥尼對流之產生。其結果，可有效地防止基板表面被: 部地乾燥之不良狀況。 又，於置換步驟中，置換區域沿基板之徑向擴大，低表 面張力溶劑之自供給位置（基板之表面中央部）至基板上之 處理液為止之距離變大，因此低表面張力溶劑混入置換區 域周圍的可能性降低。因此，在置換步驟中，可將基板之 旋轉速度設定為高於第2速度的旋轉速度，藉此作^於基 板上之處理液及低表面張力溶劑之離心力增大，從而置^ 為低表面張力溶劑所需之時間得以縮短。又，隨著旋轉速 度之增大液膜會變薄，可減少覆蓋整個基板表面所需之低 表面張力溶劑的使用量。 對於基板之旋轉速度而言，亦可隨著時間之經過而加 速，這樣有利於縮短處理時間及減少低表面張力溶劑之使 用量。例如，可使旋轉速度以多個階段進行加速。並且， 亦可構成為使加it旋轉速度時之力〇速度@著旋轉速度之增 大而提高。 再者，作為本發明中所使用之「低表面張力溶劑」，可 使用100%之有機溶劑成分或其與純水之混合液。又作 為低表面張力溶劑，亦可使用必須含有界面活性劑之溶 劑，以代替包含有機溶劑成分之溶劑。此處，作為「有機 溶劑成分」，可使用乙醇系有機溶劑。作為乙醇系有機溶 劑，自安全性、價格等觀點考慮，可使用異丙醇、乙醇或 曱醇，尤其好的是異丙醇（IPA)。 129875.doc 200908108 [發明之效果] 根據本發明，一面將基板之旋轉速度維持為第2速度以 下，一面將低表面張力溶劑供給至基板之表面中央部而形 成置換區域後，使該置換區域沿基板之徑向擴大，從而將 整個基板表面置換為低表面張力溶劑。因此，可不浪費地 使用低表面張力溶劑，而將處理液之液膜置換為低表面張 力溶劑之液膜。又，能可靠地防止於基板表面上全面形成 低表面張力溶劑之液膜的中途，因馬蘭哥尼對流而使基板 表面之-部分乾燥露出。因此，可以較少之低表面張力溶 劑使基板表面良好地乾燥。 【實施方式】[Problems to be Solved by the Invention] However, in the above-described prior art, the substrate is rotated at a medium speed (for example, 300 rpm in Patent Document 2, 5 rpm in Patent Document 2), and the substrate is faced to the surface. The cleaning liquid is supplied and the cleaning process is performed. Further, in the replacement treatment after the cleaning, the low surface tension solvent such as IPA or IpA aqueous solution is supplied to the surface of the substrate in a large amount in the state of maintaining the rotation speed of the substrate as it is, thereby cleaning the substrate on the substrate in a short time. Replace with a low surface tension agent. Therefore, the prior art has the following problems, %, and the use of a low surface tension solvent is large, so that the cost of the guide material is increased. Therefore, research is being conducted to reduce the flow rate of a low surface tension solvent to reduce the amount of low surface tension solvent used. However, if the flow rate of the low surface tension solvent is lowered, the replacement of the low surface tension cold can only be carried out slowly, and the surface of the substrate may be locally dried due to the convection of the Marangoni convecti〇n. This situation will be briefly explained with reference to Fig. 1 . At the initial stage of supplying low surface tension/mixture such as IPA, as shown by 1〇(4), low surface tension such as 129 129875.doc 200908108 The solvent is supplied to the central portion of the surface of the substrate w to form a replacement formed by a low surface tension solvent. Area SR. At this time, the portion of the low surface tension solvent splashes on the substrate surface Wf and scatters around the replacement region SR, or the evaporated low surface tension solvent component diffuses around the replacement region SR, and sometimes mixes around the replacement region. Inside the cleaning solution. Particularly in the prior art, as described above, the rotation speed of the substrate w is maintained at a medium speed, so that the thickness of the liquid film is relatively thin. Therefore, in the liquid film portion MR in which the solvent having a low surface tension is mixed, the concentration of the low surface tension solvent becomes high, and as a result, as shown in Fig. 10 (b), the Marangoni convection is generated in the mixed portion MR, thereby causing the surface of the substrate. Wf is partially dried, which sometimes causes undesirable conditions such as watermarks. The present invention has been made in view of the above problems, and an object of the invention is to use a low surface tension solvent such as IPA to dry a substrate surface which is wetted by a treatment liquid, and a substrate treatment apparatus and a substrate treatment method which have a low surface tension solvent. The substrate surface is well dried. [Means for Solving the Problems] In order to achieve the above object, a substrate processing method according to the present invention includes a wet processing step of using a processing liquid to a substrate while rotating a substrate in a substantially horizontal state at a first speed. The surface is subjected to a wet treatment; the paddle forming step is performed to decelerate the rotation speed of the substrate to the second speed, so that the liquid film of the treatment liquid is formed in a purple shape on the substrate; the replacement region forming step is to rotate the substrate on one side The speed is maintained below the second speed, and the surface tension is lower than the low surface tension solvent of the treatment liquid to the central portion of the surface of the substrate, thereby forming a replacement region of the low surface tension solvent 129875.doc 200908108 field; the replacement step is The low surface tension solvent is supplied to the central portion of the surface, the replacement region is enlarged in the radial direction of the substrate, thereby replacing the entire substrate surface with a low surface tension solvent; and the drying step is performed after the replacement step to remove the low surface tension from the substrate surface. The solvent is used to dry the surface of the substrate. Further, in order to achieve the above object, the substrate processing apparatus of the present invention replaces the treatment liquid on the surface of the substrate with a surface tension lower than the low surface tension solvent of the treatment liquid after the wet treatment with the treatment liquid on the surface of the substrate. 'Siming the surface of the substrate with a low surface tension solvent to dry the surface of the substrate, comprising: a substrate holding mechanism that holds the substrate in a substantially horizontal posture; and a substrate rotating mechanism that surrounds the substrate held by the substrate holding mechanism Rotating the shaft and rotating; the supply mechanism supplies the low surface tension solvent to the central portion of the surface of the substrate held by the substrate holding mechanism; and the control mechanism controls the substrate rotating mechanism to adjust the rotational speed of the substrate, and the control mechanism is wet In the process, the rotation speed is set to the second speed, and on the other hand, the rotation speed is decelerated to the second speed before the supply of the low surface tension solvent, so that the liquid film of the treatment liquid is formed in a paddle shape on the substrate. Supplying a low surface tension solvent while maintaining the rotation speed of the substrate at the second speed or lower A replacement region of a low surface tension solvent is formed at a central portion of the surface of the substrate, and then a low surface tension solvent is supplied to the replacement region to expand the replacement region in the radial direction of the substrate, thereby replacing the entire substrate surface with a low surface tension solvent. In the invention (substrate processing method and apparatus) configured as described above, the substrate which is in a substantially horizontal state is rotated at the first speed, and the surface of the substrate is subjected to a wet treatment such as a cleaning treatment using the treatment liquid 129875.doc 200908108. Thereafter, the rotation speed of the substrate is decelerated to the second speed (<first speed)', and the liquid film of the treatment liquid is formed in a paddle shape on the substrate. In this state, the low surface tension solvent having a lower surface tension than the treatment liquid is supplied to the central portion of the surface of the substrate, whereby a replacement region formed of a low surface tension solvent is formed at the central portion of the surface of the substrate (replacement region forming step). Then, the low surface tension solvent is further supplied to the surface tenth portion, and the replacement region is enlarged in the radial direction of the substrate, thereby replacing the entire substrate surface with a low surface tension solvent (replacement step), and then removing the low surface tension from the substrate surface. The solvent is used to dry the surface of the substrate. Thus, while controlling the formation and expansion of the replacement region, the entire substrate surface is replaced with a low surface tension solvent, and thus the entire substrate surface is replaced with a low surface tension solvent in a single breath by supplying a large amount of low surface tension solvent to the substrate surface. Compared to technology, the amount of low surface tension solvent can be reduced. Here, 'when the replacement region is formed, the low surface tension solvent will mix around the replacement region and it is possible to generate the Marangoni convection, but since the rotation speed of the substrate is controlled in the above manner, the convection of the Marangoni can be controlled. Produced. That is, in the present invention, in order to form a purple liquid film " while rotating the substrate, the second speed (including zero) is set as follows, that is, 'the centrifugal force acting on the treatment liquid is smaller than the treatment liquid and Surface tension between the surfaces of the substrates. Therefore, by maintaining the rotational speed of the substrate at the second speed or lower, the liquid film on the surface of the substrate becomes thicker than that in the wet processing. Further, since the replacement region is performed in this state, even if a low surface tension solvent is mixed around the replacement region, 129875.doc 200908108 is thicker than the prior art, so that the mixing position can be suppressed. The convection of Marangoni. As a result, it is possible to effectively prevent the surface of the substrate from being poorly dried. Further, in the replacement step, the replacement region is enlarged in the radial direction of the substrate, and the distance from the supply position (the central portion of the surface of the substrate) of the low surface tension solvent to the treatment liquid on the substrate is increased, so that the low surface tension solvent is mixed and replaced. The likelihood around the area is reduced. Therefore, in the replacing step, the rotation speed of the substrate can be set to be higher than the rotation speed of the second speed, whereby the centrifugal force of the treatment liquid and the low surface tension solvent on the substrate is increased, thereby setting the surface to a low surface. The time required to tension the solvent is shortened. Further, as the rotational speed increases, the liquid film becomes thinner, and the amount of low surface tension solvent required to cover the entire substrate surface can be reduced. For the rotation speed of the substrate, it can also be accelerated over time, which is advantageous for shortening the processing time and reducing the amount of solvent used for low surface tension. For example, the rotational speed can be accelerated in multiple stages. Further, it is also possible to increase the force 〇 speed @ at the time of adding the rotation speed of the turn to increase the rotational speed. Further, as the "low surface tension solvent" used in the present invention, a 100% organic solvent component or a mixture thereof with pure water can be used. Further, as the solvent having a low surface tension, a solvent which must contain a surfactant may be used instead of the solvent containing the organic solvent component. Here, as the "organic solvent component", an ethanol-based organic solvent can be used. As the ethanol-based organic solvent, isopropyl alcohol, ethanol or decyl alcohol can be used from the viewpoints of safety, price, and the like, and isopropyl alcohol (IPA) is particularly preferable. 129875.doc 200908108 [Effects of the Invention] According to the present invention, while the rotation speed of the substrate is maintained at the second speed or lower, the low surface tension solvent is supplied to the central portion of the surface of the substrate to form a replacement region, and then the replacement region is formed. The substrate is radially expanded to replace the entire substrate surface with a low surface tension solvent. Therefore, it is possible to replace the liquid film of the treatment liquid with the liquid film of the low surface tension solvent without using a low surface tension solvent. Further, it is possible to reliably prevent the liquid film of the low surface tension solvent from being formed on the entire surface of the substrate, and the portion of the substrate surface is dried and exposed by the convection of the Marangoni. Therefore, the substrate surface can be well dried with less low surface tension solvent. [Embodiment]

L j 圖1係表示本發明之基板處理裝置之一實施形態的圖。 又’圖2係表示圖!之基板處理裝置之主要控制構成的方塊 圖。該基板處理裝置係用於去除附著於半導體晶圓等基板 W之表面Wf上之多餘物的洗淨處理中所使用之單片式基板 處理裝置。更具體而言，係如下所述之裝置：對基板表面 资實施藉由氟酸等藥液之藥液處理及藉由純水或卿（去 離子水：deionized water)等清洗液之清洗處理之後，使經 ^先液濁濕之基板表面Wf乾燥。再者，本實施形態中，所 谓基板表面Wf，传指形#女丄 , 係扣形成有由poly_si等構成之元件圖案 (device pattern)的圖案形成面。 該基板處理裝置具備：旋轉夹盤1，其在使基板表面術 彳之狀態下’使基板w保持為大致水平姿勢而旋 轉’·藥液喷出喷嘴3’其向保持於旋轉夹盤】之基板w之表 I29875.doc 200908108 面Wf喷出藥液；以及遮斷構件9,其配置於旋轉夾盤1之上 方位置。 旋轉夹盤！將旋轉支抽"連結於包含馬達之夾盤旋轉機 構13之旋轉軸上，從而可藉由夹盤旋轉機構13之驅動而繞 旋轉轴收絲）旋轉。該等旋轉支軸η、夾盤旋轉機構13 收容於圓筒狀之外殼2内。在旋轉支軸u之上端部，藉由 螺針等固定零件而—體地連結有圓盤狀之旋轉基座15。因 此，根據自控制整個裝置之控制單元4而來之動作指令來 驅動夹盤旋轉機構丨3, #此使旋轉基座15繞旋轉軸】而旋 轉。如此’本實施形態中，夹盤旋轉機郎係作為本發明 之「基板旋轉機構」而發揮作用。又，控制單元4控制夹 盤旋轉機構13以調整旋轉速度。 於旋轉基座15之周緣部附近，立設有用以把持基板歡 周緣部之複數個㈣们7。為了可#地料圓形之基板 W，夾盤銷17可設置有3個以上，且沿旋轉基心5之周緣 部以等角度間隔而S己置。夾盤鎖17分別具備自下方支持基 板W之周緣部之基板支持部、以及按壓支持於基板支持部 之基板W之外周端面而保持基板w的基板保持部。各夾盤 銷17構成為，可於基板保持部按壓基板w之外周端面之按 壓狀態、與使基板保持部離開基板w之外周端面之釋放狀 態之間進行切換。 在相對於鉍轉基座i 5而交付基板w時，使複數個夾盤銷 17處於釋放狀態，而在對基板w進行洗淨處理時，使複數 個夾盤銷17處於按壓狀態。藉由設為按壓狀態，複數個央 129875.doc 200908108 隔^辟Γ把持基板W之周緣部而將該基板W與旋轉基座1 5 =特-間隔並保持為大致水平姿勢。藉此，基板W在將 其表面（圖案形成面）wf面向上方而背面Wb面向下方的狀 2下得到支持。如此，本實施形態中，夾盤銷17係作為本 ::「基板保持機構」而發揮作用。再者，作為基板保 、 火盟鋼】？，亦可使用吸引基板背面Wb 以支持基板W之真空夾盤。 藥液喷出噴嘴3經由藥液閥31而與藥液供給源相連接。 因此，當根據來自控制單元4之控制指令而使藥液間训 閉時，藥液自藥液供給源朝向藥液噴出噴嘴3麼送，並自 藥液喷出喷嘴3喷出藥液。再者，藥液可使用氣酸或 卿（Buffered Hydrofluoric acid，氟酸緩衝劑）等。又於 藥液噴出喷嘴3上連接有噴嘴移動機構33(圖2)，根據來自 控制單元4之動作指令來驅動噴嘴移動機構33，藉此可使 藥液喷出噴嘴3於基板W之旋轉中心之上方之喷出位置、 與自喷出位置退避至側方之待機位置之間往返移動。 遮斷構件9具有板狀構件90、内部加工成中空且支持板 狀構件90之旋轉支軸91以及插通至旋轉支軸9ι之中空部之 内插軸95。板狀構件90係中心部具有開口部之ϋ 件，其與保持於旋轉夹盤丨之基板w之表面玫€呈對向配 置。板狀構件90之下表面（底面）9如成為與基板表面析大 致平行地對向之基板對向面’其平面尺寸形成為與基板w 之直徑同等或以上之大小。板狀構件9〇大致水平地安裝於 具有大致圓筒形狀之旋轉支軸91之下端部，旋轉支軸”以 129875.doc -14- 200908108 可繞通過基板w之中心之旋轉軸m #之方式而由沿水平 方向延伸之臂92予以保持。在内插軸95之外周面與旋轉支 軸91之内周面之間插入安裝有軸承（未圖示）。於臂92上連 接有遮斷構件旋轉機構93與遮斷構件升降機構94。 遮斷構件旋轉機構93根據來自控制單元4之動作指令而 使旋轉支軸91繞旋轉軸j旋轉。當使旋轉支軸“旋轉時， 板狀構件90與旋轉支軸9丨一起一體地旋轉。遮斷構件旋轉 機構93以如下方式構成：與保持於旋轉夾盤丨之基板％之 旋轉相應地’在與基板评相同之旋轉方向±，且以大致相 同之旋轉速度使板狀構件90(下表面90a)旋轉。 又，遮斷構件升降機構94可根據來自控制單元4之動作 指令而使遮斷構件9接近旋轉基座15而對向，或者相反地 使遮斷構件9遠離旋轉基座15。具體而言，控制單元4使遮 斷構件升降機構94作動，藉此於將基板w搬入至基板處理 裝置或自基板處理裝置搬出時，使遮斷機構9上升至旋轉 ^盤1之上方之離開位置。另一方面，於對基板w實施特 定處理時，使遮斷構件9下降至如下所述之特定之對向位 置（圖1所示之位置）’即，該位置設定在非常接近保持於旋 轉夾盤1之基板W之表面。本實施形態中於開始清 洗處理後使遮斷構件9自離開位置下降至對向位置，並持 續地使遮斷構件9位於對向位置處’直至乾燥處理結束為 止。 圖3係表示圖丨之基板處理裝置中所裝備之遮斷構件之主 要部分的縱剖面圖。又，圖4係圖3之A_A，線剖面圖（橫剖 I29875.doc 200908108 面圖）。内插於旋轉支糾之中空部之内插㈣，其橫剖 面形成為圓形。其原因在於，内插軸95(非旋轉側構件)盥 旋轉支軸9〗（旋轉側構件）之間隙的間隔於整周上均等，藉 由向該間隙内導入密封氣體’可形成使内插軸％與旋轉支 軸91之間隙㈣而不與外部接觸之狀態。於内插軸％中， 以沿鉛直軸方向延伸之方式形成有3條流體供給路徑。亦 即，於内插軸95中形成有：作為清洗液之通路之清洗液供 給路徑96 ;作為低表面張力溶劑之通路的溶劑供給路徑 97，該低表面張力溶劑具有溶解於清洗液而降低表面張力 之有機溶劑成分；以及作為氮氣等惰性氣體之通路的氣體 供給路徑98。清洗液供給路徑96、溶劑供給路徑97及氣體 供給路徑98，係藉由於由PTFE(聚四氟乙烯： Polytetrafluoroethylene)構成之内插軸95中，分別沿軸向插 入PFA(四氟乙烯/氟烷基乙烯醚共聚樹脂：p〇lymer 〇f tetrafluoroethylene and perfluoroalkylvinylether)製之管體 96b、97b、98b而形成。 並且，清洗液供給路徑96、溶劑供給路徑97及氣體供給 路徑98之下端分別成為清洗液噴出口 96a、溶劑噴出口 97a 及氣體噴出口 98a，且與保持於旋轉夾盤1之基板w之表面 Wf相對向。本實施形態中’内插軸之直徑形成為18〜2〇 mm。又，清洗液喷出口 96a、溶劑喷出口 97a及氣體喷出 口 98a之口徑分別形成為4 mm、1〜2 mm、4 mm。如此，於 本實施形態中，溶劑噴出口 97a之口徑小於清洗液喷出口 96a之口徑。藉此，可防止以下所示之不良狀況。亦即， 129875.doc 16 200908108L j Fig. 1 is a view showing an embodiment of a substrate processing apparatus of the present invention. Further, Fig. 2 is a block diagram showing the main control configuration of the substrate processing apparatus of Fig. 2; This substrate processing apparatus is a monolithic substrate processing apparatus used for cleaning a cleaning process which is attached to a surface Wf of a substrate W such as a semiconductor wafer. More specifically, the apparatus is as follows: after the surface of the substrate is treated with a chemical solution such as hydrofluoric acid or the like, and after cleaning with a cleaning solution such as pure water or deionized water The surface Wf of the substrate which has been wetted by the liquid is dried. Further, in the present embodiment, the substrate surface Wf is a pattern forming surface in which a finger pattern is formed, and a device pattern composed of poly_si or the like is formed. The substrate processing apparatus includes a rotary chuck 1 that rotates the substrate w in a substantially horizontal posture while the surface of the substrate is being pressed, and the chemical liquid discharge nozzle 3' is held in the rotary chuck. The surface of the substrate w is I29875.doc 200908108. The surface Wf discharges the chemical solution; and the blocking member 9 is disposed above the rotary chuck 1. Rotate the chuck! The rotary branch is coupled to the rotating shaft of the chuck rotating mechanism 13 including the motor so as to be rotatable about the rotating shaft by the driving of the chuck rotating mechanism 13. The rotation support shaft η and the chuck rotation mechanism 13 are housed in the cylindrical outer casing 2. At the upper end portion of the rotation support shaft u, a disk-shaped rotary base 15 is integrally coupled by a fixing member such as a screw. Therefore, the chuck rotating mechanism 丨3 is driven in accordance with an operation command from the control unit 4 that controls the entire apparatus, which causes the rotary base 15 to rotate about the rotation axis. In the present embodiment, the chuck rotating machine functions as the "substrate rotating mechanism" of the present invention. Further, the control unit 4 controls the chuck rotating mechanism 13 to adjust the rotational speed. In the vicinity of the peripheral portion of the spin base 15, a plurality of (four) members 7 for holding the peripheral portion of the substrate are provided. In order to allow the substrate W to be rounded, the chuck pins 17 may be provided in three or more, and are disposed at equal angular intervals along the peripheral edge portion of the rotating base 5 . Each of the chuck locks 17 includes a substrate supporting portion that supports the peripheral edge portion of the substrate W from the lower side, and a substrate holding portion that holds the substrate w by pressing the outer peripheral end surface of the substrate W supported by the substrate supporting portion. Each of the chuck pins 17 is configured to switch between a pressing state in which the outer peripheral end surface of the substrate w is pressed by the substrate holding portion and a release state in which the substrate holding portion is separated from the outer peripheral end surface of the substrate w. When the substrate w is delivered with respect to the turret base i 5, the plurality of chuck pins 17 are released, and when the substrate w is subjected to the cleaning process, the plurality of chuck pins 17 are pressed. By the pressing state, a plurality of central portions 129875.doc 200908108 hold the peripheral portion of the substrate W, and the substrate W and the spin base 15 are alternately spaced and held in a substantially horizontal posture. Thereby, the substrate W is supported in a shape in which the surface (pattern forming surface) wf faces upward and the back surface Wb faces downward. As described above, in the present embodiment, the chuck pin 17 functions as the "substrate holding mechanism". Furthermore, as a substrate protection, fire coal steel]? A vacuum chuck that attracts the back surface Wb of the substrate to support the substrate W can also be used. The chemical liquid discharge nozzle 3 is connected to the chemical liquid supply source via the chemical liquid valve 31. Therefore, when the chemical solution is controlled in accordance with the control command from the control unit 4, the chemical liquid is supplied from the chemical liquid supply source toward the chemical liquid discharge nozzle 3, and the chemical liquid is ejected from the chemical liquid discharge nozzle 3. Further, a medicinal acid or a Buffered Hydrofluoric Acid (fluoric acid buffer) may be used. Further, a nozzle moving mechanism 33 (FIG. 2) is connected to the chemical liquid ejecting nozzle 3, and the nozzle moving mechanism 33 is driven in accordance with an operation command from the control unit 4, whereby the chemical liquid ejecting nozzle 3 can be rotated at the center of rotation of the substrate W. The discharge position above and the reciprocating movement from the discharge position to the side standby position. The blocking member 9 has a plate-like member 90, a rotating support shaft 91 which is hollowed inside and supports the plate-like member 90, and an insertion shaft 95 which is inserted into the hollow portion of the rotary support shaft 91. The plate-like member 90 has a central portion having an opening portion which is opposed to the surface of the substrate w held by the rotating chuck. The lower surface (bottom surface) 9 of the plate-like member 90 is formed to have a plane size equal to or larger than the diameter of the substrate w as opposed to the substrate facing surface which is substantially parallel to the surface of the substrate. The plate-like member 9 is mounted substantially horizontally at a lower end portion of the rotating fulcrum 91 having a substantially cylindrical shape, and the rotating fulcrum is 129875.doc -14 - 200908108 which can be wound around the center of the substrate w by the rotation axis m # The arm 92 is held by the arm 92 extending in the horizontal direction. A bearing (not shown) is inserted between the outer peripheral surface of the interposing shaft 95 and the inner peripheral surface of the rotating support shaft 91. The blocking member is connected to the arm 92. The rotation mechanism 93 and the blocking member elevating mechanism 94. The blocking member rotating mechanism 93 rotates the rotation support shaft 91 about the rotation axis j in accordance with an operation command from the control unit 4. When the rotation support shaft is "rotated, the plate member 90" Rotating integrally with the rotating support shaft 9丨. The blocking member rotating mechanism 93 is configured to: in the same rotational direction ± as the substrate, and to rotate the plate member 90 at substantially the same rotational speed, corresponding to the rotation of the substrate held by the rotating chuck % Surface 90a) rotates. Further, the blocking member elevating mechanism 94 can cause the blocking member 9 to approach the rotating base 15 in accordance with an operation command from the control unit 4, or conversely, the blocking member 9 can be moved away from the rotating base 15. Specifically, the control unit 4 activates the blocking member elevating mechanism 94 to raise the blocking mechanism 9 to the upper side of the rotary disk 1 when the substrate w is carried into or removed from the substrate processing device. position. On the other hand, when a specific process is performed on the substrate w, the blocking member 9 is lowered to a specific opposite position (position shown in FIG. 1) as described below, that is, the position is set to be very close to the rotating clamp. The surface of the substrate W of the disk 1. In the present embodiment, after the cleaning process is started, the blocking member 9 is lowered from the separated position to the opposing position, and the blocking member 9 is continuously placed at the opposite position until the drying process is completed. Fig. 3 is a longitudinal sectional view showing a main portion of a blocking member provided in the substrate processing apparatus of Fig. 3. Further, Fig. 4 is a cross-sectional view taken along line A_A of Fig. 3 (cross section I29875.doc 200908108). Interpolated (4) inserted into the hollow portion of the rotary support, the cross section of which is formed into a circular shape. The reason for this is that the interval between the gaps of the interposing shaft 95 (non-rotating side member) 盥 the rotating fulcrum shaft 9 (rotating side member) is equal over the entire circumference, and the sealing gas can be introduced into the gap to form the interpolation. The state in which the shaft % is spaced from the rotating support shaft (4) and not in contact with the outside. In the interpolation shaft %, three fluid supply paths are formed to extend in the vertical axis direction. That is, the interposing shaft 95 is formed with a cleaning liquid supply path 96 as a passage for the cleaning liquid, and a solvent supply path 97 as a passage for the low surface tension solvent, which has a solvent dissolved in the cleaning liquid to lower the surface. An organic solvent component of the tension; and a gas supply path 98 as a passage for an inert gas such as nitrogen. The cleaning liquid supply path 96, the solvent supply path 97, and the gas supply path 98 are inserted into the PFA (tetrafluoroethylene/halothane) in the axial direction by the interpolating shaft 95 made of PTFE (polytetrafluoroethylene). The vinyl ether copolymer resin is formed of the tube bodies 96b, 97b, and 98b made of p〇lymer 〇f tetrafluoroethylene and perfluoroalkylvinylether. Further, the cleaning liquid supply path 96, the solvent supply path 97, and the lower end of the gas supply path 98 become the cleaning liquid discharge port 96a, the solvent discharge port 97a, and the gas discharge port 98a, respectively, and are on the surface of the substrate w held on the rotary chuck 1. Wf is opposite. In the present embodiment, the diameter of the 'interpolation shaft' is 18 to 2 mm. Further, the diameters of the cleaning liquid discharge port 96a, the solvent discharge port 97a, and the gas discharge port 98a are formed to be 4 mm, 1 to 2 mm, and 4 mm, respectively. As described above, in the present embodiment, the diameter of the solvent discharge port 97a is smaller than the diameter of the cleaning liquid discharge port 96a. Thereby, the following disadvantages can be prevented. That is, 129875.doc 16 200908108

U 低表面張力溶劑之表面張力低於清洗液（DIWp因此，於 自為用於噴出清洗液而形成之口徑相同口徑的溶劑噴出口 噴出低表面張力溶劑之情形時，在停止噴出低表面張力溶 劑後，低表面張力溶劑有可能會自溶劑噴出口滴落。另— 方面，於自為用於噴出溶劑而形成之口徑相同口徑的清洗 液噴出π喷出清洗液之情形時，清洗液之噴出速度會變 快。其結果，作為電性絕緣體之清洗液（DIW)以相對較高 之速度撞擊至基板表面冒『，由此可能會導致直接供給有清 洗液之基板表面Wf之供給部位帶電而氧化。與此相對本 實施形態中，係個別地設置低表面張力溶劑與清洗液之喷 出口，並且溶劑噴出口 9乃之口徑形成為小於清洗液噴出 口 96a之口徑。因此，可防止低表面張力溶劑自溶劑喷出 口滴落，並且可抑制清洗液自清洗液噴出口噴出之噴出速 度變快，從而可抑制因基板表面Wf2帶電而引起之氧化。 又’本實施形態中’清洗液噴出口 96a設置於自遮斷構 件9之中心軸、即基板…之旋轉軸j向徑向外側偏移之位置 處。藉此’可避免自清洗液噴出口 96a所噴出之清洗液集 中供給至基板表面wf之一點（基板w之旋轉中心w〇)上。其 結果’可使基板表面Wf之帶電部位分散 板W之帶電而引起之氧化。另一方面， 從而可減少因基 若清洗液噴出口 96a過於偏離旋轉軸j，則難以使清洗液到達基板表面上 之旋轉中心wo。因此’本實施形態中1自水平方向上 之旋轉軸J至清洗液噴出口 96a(喷出中心）為止之距離L設定 為4 mm左右。此處，作為可將清洗液（DIw)供給至基板表 129875.doc 200908108 於如下所示之條 面Wf上之旋轉中心wo之距離L之上限值 件下為20 mm。 DIW之流量：2L/min 基板旋轉數：1500 rpm 基板表面之狀態：表面中央部為疏水面 又，關於自旋轉軸J至溶劑噴出口 97a(嘴出口巾心）為止 之距離之上限值’只要將基板旋轉數設定為15〇〇 —，則U The surface tension of the low surface tension solvent is lower than that of the cleaning liquid (DIWp, therefore, when the low surface tension solvent is ejected from the solvent ejection port having the same caliber diameter for ejecting the cleaning liquid, the low surface tension solvent is stopped. After that, the low surface tension solvent may drip from the solvent discharge port. On the other hand, when the cleaning liquid is sprayed out from the cleaning liquid having the same diameter and the same diameter for ejecting the solvent, the cleaning liquid is ejected. As a result, the cleaning liquid (DIW) as an electrical insulator impinges on the surface of the substrate at a relatively high speed, which may cause the supply portion of the substrate surface Wf directly supplied with the cleaning liquid to be charged. In the present embodiment, the low surface tension solvent and the discharge port of the cleaning liquid are separately provided, and the diameter of the solvent discharge port 9 is smaller than the diameter of the cleaning liquid discharge port 96a. Therefore, the low surface can be prevented. The tension solvent drip from the solvent discharge port, and can suppress the discharge speed of the cleaning liquid from the cleaning liquid discharge port to be faster, thereby suppressing Oxidation caused by charging of the substrate surface Wf2. In the present embodiment, the cleaning liquid discharge port 96a is provided at a position shifted from the central axis of the blocking member 9, that is, the rotation axis j of the substrate. By this, it is possible to prevent the cleaning liquid sprayed from the cleaning liquid discharge port 96a from being concentratedly supplied to one point of the substrate surface wf (the rotation center w of the substrate w). As a result, the charged portion of the substrate surface Wf can be dispersed. On the other hand, it is possible to reduce the fact that the cleaning liquid discharge port 96a is too far from the rotation axis j, and it is difficult to cause the cleaning liquid to reach the rotation center wo on the substrate surface. Therefore, the present embodiment is self-leveling. The distance L from the rotation axis J in the direction to the cleaning liquid discharge port 96a (discharge center) is set to about 4 mm. Here, the cleaning liquid (DIw) can be supplied to the substrate table 129875.doc 200908108 as shown below. The distance W of the rotation center on the strip surface W is 20 mm below the limit value. The flow rate of DIW: 2L/min Number of rotations of the substrate: 1500 rpm The state of the surface of the substrate: the surface of the surface is a hydrophobic surface, and The upper limit of the distance from the rotation axis J to the solvent discharge port 97a (mouth outlet core) is set to 15 〇〇 - when the number of substrate rotations is set

與自上述旋轉軸J至清洗液噴出口 96a(喷出口中心）為止之 距離L之上限值（20 mm)基本上相同。 另-方面’關於自旋轉軸J至氣體噴出Q98a(喷出口中 心）為止之距離，只要可將氮氣供給至定位在對向位置上 之遮斷構件9(板狀構件90)與基板表面Wf之間所形成的間 隙空間SP内，則並無特別限定’可為任意 '然而，就向如 下所述般形成於基板表面WfJl之由低表面張力溶劑形成之 溶劑層喷附氮氣以將該溶劑層自基板…上去除之觀點考 慮，氣體喷出口 98a較好的是設置於旋轉軸j上或者其附近 又，形成於旋轉支軸91之内壁面與内插軸％之外壁面之 間的空間部分構成外側氣體供給路徑99，外側氣體供給路 徑99之下端成為環狀之外側氣體噴出口 99a。亦即，於遮 斷構件9上，除了設置有朝向基板表面…『之中央部噴出氮 氣之氣體噴出口 98a之外，亦在相對於清洗液噴出口 、 溶劑喷出口 97a及氣體喷出口 98a之徑向外側 洗液噴出口 96a、溶劑噴出口 97a及氣體喷出 且以包圍清 口 98a的方式 129875.doc -18· 200908108 而設置有外側氣體喷出口 99a。兮狄， 遠外側氣體噴出口 99a之開 口面積以遠大於氣體喷出口 98a々日9 3之開口面積之方式而形 成。如此，因2種氣體喷出口設署 〇又置於遮斷構件9上，故可自 各喷出口喷出流量及流速互不相间> * ^ 之虱軋。例如，（1)為了 將基板表面Wf之周圍環境保持為惰性氣體環境較理相的 是以較大之流量且以低速供給氮氣，以使得不會吹飛基板 表面Wf上之液體。另一方面，（2彳火ώ ** ()¾自基板表面Wf去除基The upper limit (20 mm) of the distance L from the above-described rotation axis J to the cleaning liquid discharge port 96a (the discharge port center) is substantially the same. The other aspect 'the distance from the rotation axis J to the gas discharge Q98a (the discharge port center) is as long as nitrogen gas can be supplied to the blocking member 9 (plate member 90) positioned at the opposite position and the substrate surface Wf. In the gap space SP formed therebetween, there is no particular limitation that 'may be arbitrary'. However, a solvent layer formed of a low surface tension solvent formed on the substrate surface WfJ1 as described below is sprayed with nitrogen to coat the solvent layer. From the viewpoint of the removal of the substrate, the gas ejection port 98a is preferably provided on or near the rotation axis j, and is formed in a space portion between the inner wall surface of the rotation support shaft 91 and the outer wall surface of the interpolation shaft %. The outer side gas supply path 99 is formed, and the lower end of the outer side gas supply path 99 is an annular outer side gas discharge port 99a. In other words, the shutoff member 9 is provided with a gas discharge port 98a for discharging nitrogen gas toward the center of the substrate surface, and also with respect to the cleaning liquid discharge port, the solvent discharge port 97a, and the gas discharge port 98a. The radially outer washing liquid discharge port 96a, the solvent discharge port 97a, and the gas are ejected, and the outer side gas discharge port 99a is provided so as to surround the clearing port 98a 129875.doc -18·200908108. The opening area of the far outer gas discharge port 99a is formed to be much larger than the opening area of the gas discharge port 98a. In this way, since the two kinds of gas ejection ports are disposed on the blocking member 9, the flow rate and the flow rate can be ejected from the respective ejection ports without being adjacent to each other. For example, (1) in order to maintain the surrounding environment of the substrate surface Wf in an inert gas atmosphere, the nitrogen gas is supplied at a large flow rate and at a low speed so that the liquid on the substrate surface Wf is not blown. On the other hand, (2 彳 ώ ** () 3⁄4 from the substrate surface Wf removal base

板表面Wf上之低表面張力溶劑之溶劑層時，較理想的是以 較小之流量且以高速向基板评之表面中央部供給氮氣。因 此’於上述⑴之情形時’主要藉由自外側氣时出口 99a 喷出氮氣，而於上述⑺之情形時，主要藉由自氣體喷出口 術噴出氮氣，從而可根據氮氣之用途而以適當之流量及 流速將氮氣供給至基板表面Wf上。 又，内插轴95之前端（下端）與板狀構件90之下表面9〇3並 不在同-面上，自包括下表面9〇a之同一平面向上方側退 避(圖3)。根據此種構成，使自氣體噴出口 _喷出之氮氣 擴散至其到達基板表面析為止，從而可—定程度地減少氣 氣之流速。φ即’若來自氣體噴出口 98a之氣氣之流速過 !、則會與來自外側氣體喷出口 99a之氮氣相互干擾而難 以自基板W去除基板表面Wf上之低表面張力溶劑之溶劑 層。其結果，基板表面Wf上殘留有液滴。與此相對，根據 上述構成，使來自氣體喷出口 98a之氮氣之流速緩和，從 而月b可靠地自基板w去除基板表面wf上之低表面張力溶劑 之溶劑層。 129875.doc -19- 200908108 ^回圖1繼續進行說明。清洗液供給路徑96之上端部經 由仴洗液閥83而連接於由工廠之設施等構成之供給 源藉由打開清洗液閥83，可自清洗液喷出口 96a噴出 DIW作為清洗液。 又，浴劑供給路徑97之上端部連接於溶劑供給單元7。 ^劑供給單元7具備用以生成低表面張力溶劑之箱（cabinet) 4 70，可將由箱部7〇所生成之低表面張力溶劑壓送至溶劑 供路位97。作為有機溶劑成分，使用溶解於DIW(表面 張力：72 mN/m)而使表面張力降低之物質，例如異丙醇 (表面張力.21〜23 inN/m)。再者，有機溶劑成分不限於異 丙醇，亦可使用乙醇、甲醇各種有機溶劑成分。又，有機 心劑成分不限於液體，可使各種醇之蒸氣作為有機溶劑成 勿而溶解於DIW中，從而生成低表面張力溶劑。 箱。卩70具備蓄積低表面張力溶劑之蓄積箱。該蓄積箱 72中插入有用以向蓄積箱72内供給DIW之DIW導入管73之 端，而5玄DIW導入管73之另一端則經由開閉閥73a而連 接於DIW供給源。進而，在mw導入管乃之路徑中途介裝 有流量計73b，流量計73b對自DIW供給源向蓄積箱72導入 之DIW之流量進行測量。而且，控制單元4根據由流量計 73b所測量之流量來進行開閉閥73a之開閉控制，以使diw 導入官73中所流通之DIW之流量達到目標流量（目標值）。 同樣’蓄積箱72中插入有用以向蓄積箱72内供給IpA液 體之IPA導入管74之一端，而該ipA導入管74之另一端則經 由開閉閥74a而連接於IPA供給源。進而，在IpA導入管74 129875.doc 20- 200908108 之路徑中途介裝有流量計74b，流量計74b對自心供給源 向蓄積箱72導入之IPA液體之流量進行測 ’、 订別夏。而且，控制 單元4根據由流量計7_測量之流量來進行開㈤間^之 開閉控制，以使IPA導人管74中所流通之IpA液體之流量達 到目標流量（目標值）。 f 本實施形態中’可對低表面張力溶劑中之Μ之體積百 分率（以下稱作「IPA濃度」）進行調整，亦即可將朦乂之 IPA作為低表面張力溶劑而供給，或者亦可將混合有心與 DIW之混合液作為低表面張力溶劑而供給。再者，於一直 將跳之IPA用作低表面張力溶劑之情形時，亦可經由以 下說明之溶劑閥76而直接供給ιρΑ。 蓄積箱72中插入有一端連接於溶劑供給路徑π :管-之另-端，從而可將蓄積於蓄積箱72中之低表面張 由溶劑闕76而供給至溶劑供給路徑97。溶劑供給 3 #積畜於畜積相72中之低表面張力溶 出”至溶㈣給管75之定量果77;對藉由定量果^送出至 /合劑供給官75之低表面張力溶劑 U之咖度進彳了調整之調溫器 ，、六除低表面張力溶劑中之異物之過遽器79。進 二。’冷劑供給管75上介裝有用以監視心濃度之濃度計 =溶劑供給管75上，於溶劑閱％與濃度計⑽之間分 支連接有溶劑循環管8丨之一 ^ ^ ^ an ^ 4 ^另—方面，溶劑循環管81 、j連接於蓄積箱721溶劑 環用閥82。而且，认壯@ 工）丨我有循 ;裝置之運轉過程中，一直對定量泵” 129875.doc 200908108 及調溫1178進行_ ’於未向基板w供給低表面張力 之期間，使溶劑閥76關閉，另〜jIn the case of a solvent layer of a low surface tension solvent on the surface Wf of the sheet, it is preferred to supply nitrogen gas to the center portion of the surface of the substrate at a small flow rate and at a high speed. Therefore, in the case of the above (1), the nitrogen gas is ejected mainly from the outer gas outlet 99a, and in the case of the above (7), the nitrogen gas is mainly ejected from the gas discharge port, so that it can be appropriately used according to the use of the nitrogen gas. The flow rate and flow rate supply nitrogen gas to the substrate surface Wf. Further, the front end (lower end) of the interposing shaft 95 is not on the same plane as the lower surface 9〇3 of the plate-like member 90, and is retracted from the same plane including the lower surface 9〇a (Fig. 3). According to this configuration, the nitrogen gas ejected from the gas discharge port is diffused until it reaches the surface of the substrate, so that the flow velocity of the gas can be reduced to a certain extent. φ, i.e., if the flow rate of the gas from the gas discharge port 98a is excessive, the nitrogen gas from the outer gas discharge port 99a interferes with each other, and it is difficult to remove the solvent layer of the low surface tension solvent on the substrate surface Wf from the substrate W. As a result, droplets remain on the substrate surface Wf. On the other hand, according to the above configuration, the flow rate of the nitrogen gas from the gas discharge port 98a is relaxed, and the solvent layer of the low surface tension solvent on the substrate surface wf is reliably removed from the substrate w. 129875.doc -19- 200908108 ^Return to Figure 1 to continue the description. The upper end of the cleaning liquid supply path 96 is connected to a supply source constituted by a factory facility or the like via a rinsing liquid valve 83, and the cleaning liquid valve 83 is opened, whereby DIW can be ejected from the cleaning liquid discharge port 96a as a cleaning liquid. Further, the upper end portion of the bath supply path 97 is connected to the solvent supply unit 7. The agent supply unit 7 is provided with a cabinet 4 70 for generating a low surface tension solvent, and can pump the low surface tension solvent generated by the tank portion 7 to the solvent supply path 97. As the organic solvent component, a substance which is dissolved in DIW (surface tension: 72 mN/m) to lower the surface tension, such as isopropyl alcohol (surface tension: 21 to 23 inN/m), is used. Further, the organic solvent component is not limited to isopropyl alcohol, and various organic solvent components such as ethanol and methanol may also be used. Further, the organic core component is not limited to a liquid, and a vapor of various alcohols can be dissolved in the DIW as an organic solvent to form a low surface tension solvent. box. The crucible 70 has a storage tank for accumulating a low surface tension solvent. The accumulation tank 72 is inserted into the end of the DIW introduction pipe 73 for supplying DIW into the accumulation tank 72, and the other end of the 5th DIW introduction pipe 73 is connected to the DIW supply source via the opening and closing valve 73a. Further, a flow meter 73b is interposed in the middle of the path of the mw introduction pipe, and the flow meter 73b measures the flow rate of the DIW introduced from the DIW supply source to the accumulation tank 72. Further, the control unit 4 performs opening and closing control of the opening and closing valve 73a based on the flow rate measured by the flow meter 73b so that the flow rate of the DIW flowing through the diw introduction guide 73 reaches the target flow rate (target value). Similarly, one end of the IPA inlet pipe 74 for supplying the IpA liquid into the storage tank 72 is inserted into the storage tank 72, and the other end of the ipA inlet pipe 74 is connected to the IPA supply source via the opening and closing valve 74a. Further, a flow meter 74b is installed in the middle of the path of the IpA introduction pipe 74 129875.doc 20-200908108, and the flow rate 74b measures the flow rate of the IPA liquid introduced into the accumulation tank 72 from the center supply source, and sets the summer. Further, the control unit 4 performs opening and closing control of the opening (f) according to the flow rate measured by the flow meter 7_ so that the flow rate of the IpA liquid flowing through the IPA guiding pipe 74 reaches the target flow rate (target value). f In the present embodiment, 'the volume percentage of ruthenium in the low surface tension solvent (hereinafter referred to as "IPA concentration") can be adjusted, and the IPA of ruthenium can be supplied as a low surface tension solvent, or The mixed mixture of the center and the DIW is supplied as a low surface tension solvent. Further, when the IPA of the jump is used as the low surface tension solvent, it can be directly supplied to the solvent valve 76 as described below. One end of the accumulating tank 72 is inserted into the solvent supply path π: the other end of the tube, so that the low surface accumulated in the accumulating tank 72 can be supplied from the solvent crucible 76 to the solvent supply path 97. Solvent supply 3 # accumulation of livestock in the low phase tension of the livestock phase 72 dissolution" to the dissolved (four) to the quantitative determination of the fruit 75 of the 77; for the low surface tension solvent U by the quantitative fruit to the / mixture supply officer 75 The temperature regulator is adjusted, and the foreign matter of the foreign matter in the low surface tension solvent is removed. The second refrigerant is supplied with a concentration meter for monitoring the concentration of the heart. At 75, a solvent circulation pipe 8 is connected between the solvent reading % and the concentration meter (10), and the solvent circulation pipes 81 and j are connected to the storage tank 721 solvent ring valve 82. Moreover, I am convinced that I have a follow-up; during the operation of the device, the quantitative pump "129875.doc 200908108 and the temperature adjustment 1178 are always carried out _ 'the solvent valve is supplied during the period when the low surface tension is not supplied to the substrate w 76 closed, another ~j

表面張力溶劑之期間，使循環用間82打:向:=: =77而:蓄積箱:送出之低表面張力溶劑通過溶 :1:返口至畜積相72中。亦即’於未向基板w 面張力溶劑之期間，低表面張力溶劑於由蓄積箱72、溶： 供給管75及溶劑循環管81構成之循環路徑中循環。另—方 面’當到達向基板W供給低表面張力溶劑之時㈣，心 劑，76打開，另—方面，將循環用閥82關閉。藉此，自; 積箱72送出之低表面張力溶劑被供給至溶劑供給路㈣。 如此’於未向基板W供給低表面張力溶劑之期間，藉由使 低表面張力溶劑循環而對卿與IPA加以攪拌，從而可形 成DIW與IPA得到充分混合的狀態。又，當溶劑閥％打開 後’可將調整為特定溫度並且已去除了異物之低表面張力 溶劑快速地供給至溶劑供給路徑97。 氣體供給路徑98及外側氣體供給路徑99之上端部分別與 氣體供給單元1 8(圖2)相連接，可根據控制單元4之動作指 令，而自氣體供給單元18向氣體供給路徑98及外側氣體供 給路徑99個別地壓送氮氣。藉此，可向間隙空間卯供給氮 氣11亥間隙空間SP形成於定位在對向位置上之遮斷構件 9(板狀構件9〇)與基板表面wf之間。 於外殼2之周圍固定安裝有支撐構件21。支撐構件21上 立設有圓筒狀之間隔構件23a、23b、23c。外殼2之外壁與 間隔構件23a之内壁之間的空間形成第1排液槽25a，間隔 129875.doc -22- 200908108 構件23a之外壁與間隔構件23b之内壁之間的空間形成第2 排液槽25b，間隔構件23b之外壁與間隔構件23c之内壁之 間的空間形成第3排液槽2 5 c。 於第1排液槽25a、第2排液槽25b及第3排液槽25c之底部 分別形成有排出口 27a、27b、27c，各排出口連接於互不 相同之引流管。例如在本實施形態中，第丨排液槽25a係用 以回收使用完之藥液之槽，且連通於用以回收藥液以供再 利用之回收引流管。又，第2排液槽25b係用以排出使用完 之清洗液之槽，且與用以進行廢棄處理之廢棄引流管相連 通。進而，第3排液槽25c係用以排出使用完之低表面張力 溶劑之槽，且與用以進行廢棄處理之廢棄引流管相連通。 在各排液槽25a〜25c之上方設置有防濺板6。防濺板6係 以包圍以水平姿勢保持於旋轉夾盤1上之基板W之周圍的 方式’而相對於旋轉夾盤1之旋轉軸J升降自如地設置。該 防濺板6具有相對於旋轉軸J大致旋轉對稱之形狀，且具備 與旋轉夾盤1呈同心圓狀地自徑向内侧向外側配置之3個防 4罩61、62、63。3個防護罩61、62、63設置成，高度自 最外部之防護罩63朝向最内部之防護罩61依次降低，並且 配置成，各防護罩61、62、63之上端部收容於沿鉛直方向 延伸之面内。 防滅板6與防護罩升降機構6 5相連接，根據來自控制單 7L 4之動作指令而使防護罩升降機構65之升降驅動用致動 器（例如氣缸等）作動，藉此可使防濺板ό相對於旋轉夾盤i 而升降。本實施形態中，藉由防護罩升降機構65之驅動而 129875.doc »23. 200908108 使防濺板6階段性地升降，藉此 疋轉之基板W飛散 之處理液分類地排出至第丨〜第3排液槽25a〜中。 於防護罩61之上部形成有剖面為„〈， 于化且向内方打開 之槽狀之第1引導部61a。而且，藉由於進 • 相05 /、逆仃樂液處理時使 防賤板6位於最高位置（以下稱作「篦〗古 r彿邗第1阿度位置」），而利 用第1引導部61a來阻擋自旋轉之基板w飛散之藥液，並引 導至第1排液槽25a。具體而言，作為第i高度位置以第1During the period of the surface tension solvent, the circulation time is 82: the direction: =: = 77: the accumulation tank: the low surface tension solvent sent out is dissolved: 1: the mouth is returned to the livestock phase 72. That is, the low surface tension solvent circulates in the circulation path constituted by the accumulating tank 72, the solvent supply pipe 75, and the solvent circulation pipe 81 during the period in which the solvent is not applied to the substrate w. On the other hand, when the low surface tension solvent is supplied to the substrate W (4), the core agent 76 is opened, and on the other hand, the circulation valve 82 is closed. Thereby, the low surface tension solvent sent from the stacker 72 is supplied to the solvent supply path (4). When the low surface tension solvent is not supplied to the substrate W, the IPA is stirred by circulating the low surface tension solvent, whereby the DIW and the IPA are sufficiently mixed. Further, when the solvent valve % is opened, the low surface tension solvent adjusted to a specific temperature and from which foreign matter has been removed can be quickly supplied to the solvent supply path 97. The upper end portions of the gas supply path 98 and the outer gas supply path 99 are respectively connected to the gas supply unit 18 (FIG. 2), and can be supplied from the gas supply unit 18 to the gas supply path 98 and the outside gas according to the operation command of the control unit 4. The supply path 99 individually pressurizes nitrogen gas. Thereby, the gap space 卯 is supplied to the gap space 亥, and the gap space SP is formed between the blocking member 9 (plate member 9A) positioned at the opposite position and the substrate surface wf. A support member 21 is fixedly mounted around the outer casing 2. The support members 21 are provided with cylindrical spacer members 23a, 23b, and 23c. The space between the outer wall of the outer casing 2 and the inner wall of the partition member 23a forms the first liquid discharge groove 25a, and the space between the outer wall of the member 23a and the inner wall of the partition member 23b forms a second liquid discharge groove. 25b, a space between the outer wall of the partition member 23b and the inner wall of the partition member 23c forms a third drain groove 25c. Discharge ports 27a, 27b, and 27c are formed in the bottoms of the first drain tank 25a, the second drain tank 25b, and the third drain tank 25c, respectively, and the discharge ports are connected to different drain pipes. For example, in the present embodiment, the second draining tank 25a is used for recovering the used chemical liquid tank and communicating with the recovery draining tube for recovering the chemical liquid for reuse. Further, the second drain tank 25b is a tank for discharging the used cleaning liquid, and is connected to the waste drain pipe for disposal. Further, the third drain tank 25c is a tank for discharging the used low surface tension solvent, and is in communication with the waste drain pipe for disposal. A splash guard 6 is provided above each of the drain tanks 25a to 25c. The splash guard 6 is provided so as to be movable up and down with respect to the rotation axis J of the rotary chuck 1 so as to surround the periphery of the substrate W held in the horizontal position by the rotary chuck 1. The splash guard 6 has a shape that is substantially rotationally symmetrical with respect to the rotation axis J, and includes three anti-4 covers 61, 62, and 63 that are concentrically arranged from the radially inner side to the outer side of the rotary chuck 1. The shields 61, 62, 63 are disposed such that the height is sequentially lowered from the outermost shield 63 toward the innermost shield 61, and is configured such that the upper ends of the shields 61, 62, 63 are received in the vertical direction. In-plane. The smash-proof plate 6 is connected to the hood lifting and lowering mechanism 65, and the lifting/lowering actuator (for example, a cylinder or the like) of the hood lifting and lowering mechanism 65 is actuated according to an operation command from the control sheet 7L4, thereby preventing the splashing. The sill is raised and lowered relative to the rotating chuck i. In the present embodiment, the splash guard 6 is stepped up and down by the driving of the protective cover elevating mechanism 65, 129875.doc »23. 200908108, and the processing liquid scattered by the substrate W is discharged to the third layer in a sorted manner. The third drain tank 25a is in the middle. A first guide portion 61a having a trough shape in which the cross section is „<, and opened inward is formed in the upper portion of the protective cover 61. Further, the anti-smashing plate is formed by the treatment of the phase 6 is located at the highest position (hereinafter referred to as "篦〗 古古r佛邗1A degree position"), and the first guiding portion 61a blocks the chemical liquid scattered from the rotating substrate w and is guided to the first drain tank 25a. Specifically, as the i-th height position, the first

引導部61a包圍保持於旋轉夾盤i上之基板…之周圍的方式 而配置防濺板6,藉此使自旋轉之基 防護罩61而引導至第1排液槽25a。 又，於防護罩62之上部，形成有自徑向外_向⑽而 向斜上方傾斜的傾斜部62a。而且’藉由於進行清洗處理 ，使防濺板6位於低於第丨高度位置之位置（以下稱作「第2 高度位置」），而利用傾斜部62a來阻擔自旋轉之基板㈣ 散之清洗液，並引導至第3排液槽25b。具體而言，作為第 2高度位置，以傾斜部62a包圍保持於旋轉夾盤丨上之基板 W之周圍的方式而配置防濺板6 ’藉此使自旋轉之基板w飛 散之清洗液穿過防護罩61之上端部與防護罩62之上端部之 間而引導至第2排液槽25b。 同樣，於防護罩63之上部，形成有自徑向外側朝向内側 而向斜上方傾斜的傾斜部63a。而且，藉由於進行置換處 理=使防濺板6位於較第2高度位置更低之位置（以下稱作 第3兩度位置」），從而利用傾斜部63a來阻擋自旋轉之 基板W飛散之低表面張力溶劑，並引導至第2排液槽乃〇。 129875.doc -24- 200908108 具體而s，作為第3高度位置，以傾斜部63a包圍把持於旋 轉夾盤1上之基板W之周圍的方式而配置防濺板6，藉此使 自旋轉之基板w飛散之低表面張力溶劑穿過防護罩62之上 端部與防護罩63之上端部之間而引導至第3排液槽25〇 進而，使使防濺板6位於較第3高度位置更低之位置（以 下=作「退避位置」）’以使旋轉夾盤1自防濺板6之上端 部突出，藉此基板搬送機構（未圖示）可將未處理之基板wThe guide portion 61a is disposed so as to surround the substrate ... held by the rotary chuck i, and the splash guard 6 is disposed, whereby the self-rotating base cover 61 is guided to the first drain groove 25a. Further, an inclined portion 62a which is inclined obliquely upward from the radially outer direction (10) is formed in the upper portion of the shield 62. Further, 'by the cleaning process, the splash guard 6 is placed at a position lower than the second height position (hereinafter referred to as a "second height position"), and the inclined portion 62a is used to block the self-rotating substrate (four). The liquid is guided to the third drain tank 25b. Specifically, as the second height position, the splash guard 6' is disposed so as to surround the substrate W held on the spin chuck 倾斜 by the inclined portion 62a, thereby passing the cleaning liquid scattered from the rotating substrate w The upper end portion of the shield 61 and the upper end portion of the shield 62 are guided to the second drain groove 25b. Similarly, an inclined portion 63a which is inclined obliquely upward from the radially outer side toward the inner side is formed in the upper portion of the shield 63. Further, by performing the replacement processing = placing the splash guard 6 at a position lower than the second height position (hereinafter referred to as a third two-degree position), the inclined portion 63a is used to block the scattering of the self-rotating substrate W. The surface tension solvent is directed to the second drain tank. 129875.doc -24- 200908108 Specifically, as the third height position, the splash guard 6 is disposed so as to surround the substrate W held by the spin chuck 1 with the inclined portion 63a, thereby making the spin-on substrate The low surface tension solvent scattered by w passes between the upper end portion of the shield 62 and the upper end portion of the shield 63 to be guided to the third liquid discharge groove 25, thereby making the splash plate 6 lower than the third height position. The position (hereinafter referred to as "retracted position") is such that the rotary chuck 1 protrudes from the upper end portion of the splash guard 6, whereby the substrate transfer mechanism (not shown) can unprocess the substrate w

载置於旋轉夾盤1上，或可自旋轉夾盤1接收處理完之基板 W。 繼而，利用圖5至圖7來詳細說明以上述方式構成之基板 處理褒置之動作。圖5係表示圖1之基板處理裝置之動作的 時序圖。又，圖6及圖7係表示圖！之基板處理裝置之動作 的模式圖。該裝置中，批去丨丨Λ t ^ 才工制早7L 4根據記憶於記憶體（省略 圖示）中之程式而對裝置各部分進行控制，從而對基板W實 Γ連串之處理。亦即，控制單元4使防賤板6位於退避位It is placed on the rotating chuck 1, or the processed substrate W can be received from the rotating chuck 1. Next, the operation of the substrate processing apparatus configured as described above will be described in detail with reference to Figs. 5 to 7 . Fig. 5 is a timing chart showing the operation of the substrate processing apparatus of Fig. 1. 6 and 7 are diagrams! A schematic diagram of the operation of the substrate processing apparatus. In this device, the batch is processed, and the parts of the device are controlled according to the program stored in the memory (not shown), so that the substrate W is processed in series. That is, the control unit 4 causes the tamper plate 6 to be in the retracted position.

置：以使旋轉夹盤丨自防㈣之上端部突出。而且，於該 狀態下藉由基板搬送機構' &quot;番* 稱(未圖不)將未處理之基板W搬入 至裝置内’從而對基板W勃耔、土、金奋 理+樂妒成户理…「仃洗淨處理(藥液處理+清洗處 …處理+置換區域形成處理+置換處 理）。於基板表面Wf上形成有彳 屎處 〜战有例如由poly_si;il 案。因此，本實施形態中 钱之微細圖 態下將基板w搬入至裝置内：反面Wf朝向上方之狀 者，遮斷構件9位於旋轉失 将灭盤1上。再 與基板评之間產生干^ 上方之離開位置上，以防止 129875.doc 200908108 繼而，控制單元4將防機板6配置於^高度 示之位置）上，對基板w執行藥液處理。 斤 喷嘴3移動至喑ψ &amp; $ ^ ^ ^ ^ ® 噴出位置’並且藉由夾盤旋轉機構13之驅動 而使保持於旋轉夹盤1上之基板w以規定為·〜 之範圍内的旋轉速度(例如〜)而旋轉。繼而，打:： 液闊3卜自藥液噴出噴嘴3向基板表面術供^ 氟酸（HF供給）。供妗$其社生 巧樂液之 擴散，從而藉由二對==上之氟酸會因離心力而 導至第—以供適當再： 置當^處理結束後，使藥液喷出噴嘴3移動至待機位 作…，將防賤板6配置於第2高度位置，對基板W執行 液閥831 :濕式處^之清洗處理。亦即，打開清洗 從位於離開位置之遮斷構件9之清洗液噴 喷出清洗液（卿供給）。又，於喷出清洗液之同時，使遮 斷構件9朝向對向位置下降，並定位於該對向位置處。如 此，在藥液處理後，立即向基板表面Wf供給清洗液，藉此 :吏基板表面Wf持續地保持潤濕狀態。其原因如下 ， p處理後’ t a酸自基甩出後’基板表面Wf開始乾 燥。其結果，基板表面Wf會局部地乾燥，從而有時會於: 板表面Wf上產生斑點等。因此，為防止如此之基板表=Set: to make the rotating chuck 丨 self-defense (four) upper end protruding. Further, in this state, the unprocessed substrate W is carried into the device by the substrate transfer mechanism '&quot; (not shown), thereby embossing the substrate W, soil, gold, and music [...] 仃 处理 ( 药 药 药 药 药 药 药 药 药 药 药 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 In the fine pattern of the money in the form, the substrate w is carried into the device: when the reverse surface Wf faces upward, the blocking member 9 is located on the rotating and extinguishing disk 1. Then, the separation position above the substrate is generated. In order to prevent 129875.doc 200908108, the control unit 4 arranges the anti-machine panel 6 at the position shown in the height, and performs the chemical treatment on the substrate w. The nozzle 3 moves to 喑ψ & $ ^ ^ ^ ^ The discharge position ' is driven by the chuck rotating mechanism 13 to rotate the substrate w held on the rotary chuck 1 at a rotation speed (for example, ~) within a predetermined range of 〜. Then, the liquid is: Wide 3 Bu from the liquid spray nozzle 3 to the surface of the substrate for the supply of hydrofluoric acid (HF Supply). For the spread of the company's skillful liquid, so that the two pairs of == on the fluoride acid will be led to the first due to centrifugal force - for appropriate re-: The nozzle 3 is moved to the standby position, the tamper-proof plate 6 is placed at the second height position, and the liquid valve 831 is cleaned on the substrate W: the wet-type cleaning process is performed. That is, the cleaning is turned off from the detachment position. The cleaning liquid of the member 9 sprays the cleaning liquid (clear supply). Further, while the cleaning liquid is ejected, the blocking member 9 is lowered toward the opposite position and positioned at the opposite position. Thus, in the liquid medicine Immediately after the treatment, the cleaning liquid is supplied to the substrate surface Wf, whereby the surface Wf of the substrate is continuously kept in a wet state. The reason is as follows: after the p treatment, the tar acid starts to dry after the substrate is rolled out. The surface Wf of the substrate is partially dried, so that spots or the like may be generated on the surface Wf of the board. Therefore, in order to prevent such a substrate table =

Wf之局部乾炼’重要的是使基板表面Wf保持潤濕的狀 態。又，自遮斷構件9之氣體喷出口 98a及外側氣體喷出口 &quot;3喷出氮氣。此處，主要是自外側氣體噴出口 99a噴出氮 129875.doc * 26 - 200908108 氣。亦即，自外側氣體喷出口 99a喷出流量較大之氮氣， 另一方面，對自兩喷出口喷出的氮氣之流量平衡進行調 整，以使自氣體喷出口 98a喷出之氮氣之流量較小。 於圖5所示之氮氣流量中，虛線表示自外側氣體喷出口 99a喷出之氣體流量，實線表示自氣體喷出口 98a及外側氣 ' 體喷出口 99a喷出之氣體流量之合計。如圖5所示，當將向 基板表面Wf供給作為清洗液之DIW時所喷出的氮氣之流量 設為例如 100 SLM(standard liter per minute，每分鐘標準 升）時，使其中之95 SLM氮氣自外側氣體喷出口 99a進行供 給，另一方面，使剩餘之5 SLM氮氣自氣體喷出口 98a進行 供給。 氣體流量並不限於上述，作為自氣體喷出口 98a噴出之 氣體流量，較好的是5 SLM至40 SLM，作為自外側氣體喷 出口 99a喷出之氣體流量，較好的是95 SLM至100 SLM左 右。 自清洗液喷出口 96a向基板表面Wf供給之清洗液會因伴 隨著基板w旋轉之離心力而擴散，從而對整個基板表面wf 進行清洗處理（濕式處理步驟）。亦即，藉由相當於本發明 之處理液之清洗液，對殘留附著於基板表面Wf上之氟酸進 行沖洗而將其自基板表面Wf去除。自基板W甩出之使用完 之清洗液被引導至第2排液槽25b中並廢棄。又，藉由向間 隙空間SP供給氮氣，從而將基板表面Wf之周圍環境保持 為低氧濃度環境。因此，可抑制清洗液之溶存氧濃度之上 升。再者，將清洗處理時之基板W之旋轉速度（第1速度）設 129875.doc -27- 200908108 定為例如600 rpm(圖6(a))。 又’於執行上述清洗處理及以下所述之處理（紫形成處 理、置換區域形成處理、置換處理、乾燥處理）時，使遮 斷構件9之板狀構件9〇以與基板冒相同之旋轉方向且以大 致相同之旋轉速度旋轉。藉此，可防止於板狀構件％之下 表面90a與基板表面Wf之間產生相對的旋轉速度差，從而 可抑制捲入至間隙空間SP内之氣流之產生。因此，可防止 霧狀之清洗液及低表面張力溶劑進入間隙空間SP内並附著 於基板表面。又，藉由使板狀構件9〇旋轉而將附著於 下表面90a之清洗液及低表面張力溶劑甩出，從而可防止 '月洗液或低表面張力溶劑滯留於下表面90a。 當特定時間之清洗處理結束後，繼而執行槳形成處理。 亦即，控料元4於清洗處理結束之後，使基板W之旋轉 速度減速至較第1速度更低之第2速度，藉此，使自清洗液 、 ^喷出之清洗液積存於基板表面wf上，從而使 。一液臈形成為槳狀（槳形成處理）。本實施形態中，控制 單凡4將第2速度設定為1 0啊，以9秒的時間持續供給清 、主後關閉清洗液閥83 ,停止自清洗液喷出口 96a喷 =洗液。藉此，如圖6(b)所示，形成DIW液膜。再者， 度並不限定為1G — ’但必須在滿足作用於清洗液 】於作用於清洗液與基板表面Wf之間的表面張力 之：：的範圍内設定第2速度。其原因在於，為使清洗液 而、形成為紫狀’必須充分滿足上述條件。 且铋止供給DIW後，經過特定時間（本實施形態 I29875.doc -28- 200908108 中，為0.5秒的時間），待槳狀DIW液狀膜糾於基板界之 整個面上變得大致均勾後，控制單元4將防賤㈣配置於 第3高度位置。繼而，㈣溶劑間76，自溶劑喷出口心喷 出低表面張力溶劑。此處’於箱部7〇中預先準備好i嶋 之IPA ’ IPA以低流量、例如1〇〇(mL/min)之流量自溶劑喷 出口 97a朝向基板表面Wf之表面中央部喷出。藉由供給該 IPA’如圖6⑷所示，於基板w之表面中央部，將⑴以液膜 之中央部置換為IPA，從而使置換區域SR形成為液膜(置換 區域形成處理）。 自供給IPA開始經過3秒後，控制單元4在繼續供給ιρΑ之 狀態下使基板w之旋轉速度自1G rpm加速至·啊。藉 此，置換區域SR沿基板W之徑向擴大，從而將整個基板表 面Wf置換為低表面張力溶劑（置換處理）。本實施形態中， 按照如下所說明之方式，以2個階段使基板w之旋轉速度 加速β 控制單元4用〇.5秒的時間使基板W之旋轉速度自10 rpm 加速至100 rpm(第1置換處理）。如此，藉由旋轉速度之加 速，作用於基板表面Wf上之液臈（DIW區域+IPA區域（置換 區域SR))之離心力增大，從而將DIW甩出，並且置換區域 SR沿徑向擴展（圖6(d))。此時，基板表面Wf上之液膜厚度 變薄至與旋轉速度相對應之厚度t2，經過特定時間（本實施 t心中為1秒）後，基板w之表面外周部上所存在之全 部自基板W甩出’ ϋ且置換區域从均勻地擴散至整個基板 表面Wf上，從而使基板表面Wf的整個面被ΙΡΑ液膜所覆 129875.doc -29- 200908108 蓋。 於其次之第2置換處理中，控制單元4用〇·5秒的時間使 基板W之旋轉速度自100 rpm加速至3〇〇 rpm。該步驟之進 行，係為了將形成於基板表面Wf上之微細圖案之間隙 内部所殘留的清洗液（圖7(a)中之「殘留mw」）置換為 IPA。即，藉由旋轉速度之加速，使IpA於基板表面上 較大地流動，藉此，微細圖案Fp之間隙内部所殘留之 被置換為IPA(圖7(b))。藉此，附著於基板表面Wf上之mw 被可靠地置換為IPA。如此，於第2置換處理中之加速度 (=(300-100)/0.5)高於第i置換處理之加速度（气丨〇〇_ 10)/0.5)，藉此可提高殘留DIW之置換效率。再者，自基 板W甩出之使用完之IPA被引導至第3排液槽25c並廢棄。 如圖5所不，於直至置換處理結束為止的期間内，自氣 體喷出口 98a及外側氣體噴出口 993噴出之氮氣流量維持為 與清洗處理時相同的流量。如此，在將遮斷構件9接近配 置於基板表面Wf的狀態下，一面將相對較大流量且低速之 J 氣氣持續地供給至基板表面Wf，一面執行清洗處理及置換 處理，藉此可抑制周圍環境中所包含之霧中之藥液或清洗 液之成分進入至間隙空間51&gt;内。尤其是在置換處理中，可 有效地抑制由於覆蓋基板表面Wf之IPA中混入有清洗液之 霧而引起的水印之產生。 如此，當置換處理結束後，控制單元4提高夾盤旋轉機 構13之旋轉速度而使基板W高速旋轉（例如1〇〇〇 rpm)。藉 此，將附著於基板表面Wf之IPA甩出，執行基板w之乾燥 129875.doc -30· 200908108 理（旋轉乾燥）(乾燥處理）。此時，於圖案之間隙中進入 有低表面張力溶劑’因此可防止圖案破壞或水印產生。 又’間隙空間SP中充滿有自氣體喷出口98a及外側氣體喷 出口 99a所供給之氮氣，因此可縮短乾燥時間，並且可減 少被氧化物質溶出至阳_ I # 14c , ®主附者於基板w上之液體成分（低表面張 力溶劑）中，從而可更有效地抑制水印之產生。 於乾燥處理中，使氮氣之流量自100 SLM增加至 MO SLM(圖5)，藉此更可靠地防止霧等之迴繞。此時，使 自外側氣體喷出口州喷出之喷出量幾乎不發生變化（自％ SLM增加至1〇〇 SLM)，另一方面’使自氣體噴出口 _喷 出之喷出量大幅地增加（自5 SLM增加至4〇 slm)，藉此可 :基板表面Wf之中央部供給流速較高之氮氣流。藉此，可 高效地將IPA自基板中央部朝向周緣部排出。 當基板w之乾燥處理結束後，控制單元4控制夾盤旋轉 機構13使基板W之旋轉停止。氮氣之供給較理想的是至少 持續直至基板之旋轉停止為止之期間。而且，使防滅板6 位於退避位置，以使旋轉夾盤丨自防濺板6之上方突出。之 後，基板搬送機構將處理完之基板w自裝置中搬出，從而 結束對1片基板w之一連串之洗淨處理。 如此，根據本實施形態，一面W10〇(mL/min)之低流量 之IPA供給至基板表面Wf之中央部，—面進行置換區域SR 之形成及擴大。因此，與先前技術（將大量IpA供給至基板 表面而一口氣地將整個基板表面置換為IPA)相比，可大幅 降低將整個基板表面置換為IPA所需的ip a的使用量。 129875.doc -31 - 200908108 而且本實施形態中，使基板w之旋轉速度減速至第2速 度而使DIW液臈增大至厚度u，一面維持該狀態一面將 IPA供給至基板W之表面中央部，藉此於基板表面Wf之中 央部形成IPA之置換區域SR。此時，基板表面评[上之液膜 中位於置換區域SR之周圍的DIW區域中有時會混入IpA， 但因基板表面Wf上之液膜相對較厚（厚度u)，故可抑制混 入位置處之馬蘭哥尼對流之產生。其結果，可有效地防止 基板表面Wf被局部地乾燥之不良狀況。 此處，可在將基板w之旋轉速度維持為第2速度的狀態 下繼續供給IP A而進行置換處理，亦可如本實施形態般， 將基板w之旋轉速度加速至較第2速度更高的旋轉速度（1 〇〇 rpm)。其原因在於，於形成置換區域SR之後，自lpA之供 給位置（基板W之表面中央部）至基板WL2DIW區域為止之 距離增大，因此IPA混入至置換區域SR之周圍的可能性變 低。因此，本實施形態中，藉由使基板w之旋轉速度加 速’而作用於基板表面^^上之液膜（DIW區域+置換區域 SR)之離心力增大，從而使置換為IPA所需之時間得到縮 短。又，隨著旋轉速度之增大，液膜變薄，可減少覆蓋整 個基板表面所需之IPA之使用量。 進而’亦可在整個基板表面％4皮IpA覆蓋的時刻結束置 換處理，但於本實施形態中，自該狀態開始，使基板W之 旋轉速度進而增大至3〇〇 rpm，亦即進行第2置換處理，因 此能可靠地將微細圖案Fp之殘留DIW置換為IpA。因此， 可更有效地抑制圖案之破壞。 J29875.doc -32- 200908108 再者，本發明並不限於上述實施形態，只要不脫離其主 旨，則除了上述實施形態以外亦可進行各種變更。例如於 上述實施形態中，於置換處理中係分為2個階段使基板w 之旋轉速度加速，但亦可分為3個階段以上進行加速。 又’置換處理中亦可使基板W之旋轉速度連續地加速。 又，上述實施形態中’係一面以與槳形成處理相同之旋 轉速度、亦即第2速度使基板W旋轉，一面執行置換區域 形成處理，但亦可在使基板W之旋轉停止之狀態下或以低 於第2速度之速度旋轉的狀態下執行置換區域形成處理。 總之’一面將基板之旋轉速度維持於第2速度以下，一面 將低表面張力溶劑供給至基板之表面中央部而形成由低表 面張力溶劑形成之置換區域，藉此可獲得與上述實施形態 相同之作用效果。 又’上述實施形態中，係將IPA用作低表面張力溶劑， 但亦可於箱部70中製作IPA與DIW之混合液，並將其用作 低表面張力溶劑。又，混合液之生成方法並不限定於此。 例如，亦可在將DIW朝向遮斷構件之液供給路徑（或噴嘴） 輸送之送液路徑上，於線内（inline)使IpA等有機溶劑成分 /&amp;而生成/¾合液。又，箱部等混合液生成機構並不限於 設置在基板處理裝置内之情形，#可將在與基板處理裝置 個別地設置之其他裝置中生成的混合液經由設置於基板處 理裝置内之遮斷構件而供給至基板表面wf。進而，亦可使 用必須含有界面活性劑之溶劑，以代替包含IPA等有機溶 劑成分之溶齊丨。 129875.doc -33- 200908108The partial drying of Wf is important to keep the substrate surface Wf wet. Further, nitrogen gas is ejected from the gas discharge port 98a of the blocking member 9 and the outside gas discharge port &quot;3. Here, mainly, nitrogen gas 129875.doc * 26 - 200908108 is ejected from the outer gas discharge port 99a. That is, the nitrogen gas having a large flow rate is ejected from the outer gas ejection port 99a, and on the other hand, the flow balance of the nitrogen gas ejected from the two ejection ports is adjusted so that the flow rate of the nitrogen gas ejected from the gas ejection port 98a is higher. small. In the nitrogen gas flow rate shown in Fig. 5, the broken line indicates the flow rate of the gas ejected from the outer gas discharge port 99a, and the solid line indicates the total flow rate of the gas ejected from the gas discharge port 98a and the outer side gas ejection port 99a. As shown in FIG. 5, when the flow rate of nitrogen gas to be supplied as the DIW of the cleaning liquid to the substrate surface Wf is set to, for example, 100 SLM (standard liter per minute), 95 SLM of nitrogen is used therein. The supply is performed from the outside air ejection port 99a, and the remaining 5 SLM nitrogen gas is supplied from the gas ejection port 98a. The gas flow rate is not limited to the above, and the gas flow rate ejected from the gas discharge port 98a is preferably 5 SLM to 40 SLM, and the gas flow rate ejected from the outer gas discharge port 99a is preferably 95 SLM to 100 SLM. about. The cleaning liquid supplied from the cleaning liquid discharge port 96a to the substrate surface Wf is diffused by the centrifugal force accompanying the rotation of the substrate w, and the entire substrate surface wf is cleaned (wet processing step). In other words, the hydrofluoric acid remaining on the substrate surface Wf is washed by the cleaning liquid corresponding to the treatment liquid of the present invention, and is removed from the substrate surface Wf. The used cleaning liquid that has been ejected from the substrate W is guided to the second liquid discharge tank 25b and discarded. Further, by supplying nitrogen gas to the gap space SP, the surrounding environment of the substrate surface Wf is maintained in a low oxygen concentration environment. Therefore, it is possible to suppress an increase in the dissolved oxygen concentration of the cleaning liquid. Further, the rotation speed (first speed) of the substrate W during the cleaning process is set to 129875.doc -27 - 200908108 as, for example, 600 rpm (Fig. 6(a)). Further, when performing the above-described cleaning process and the following processes (purple forming process, replacement zone forming process, replacement process, and drying process), the plate-like member 9 of the blocking member 9 is rotated in the same direction as the substrate. And rotate at approximately the same rotational speed. Thereby, a relative rotational speed difference between the surface 90a below the plate-like member % and the substrate surface Wf can be prevented, so that the generation of the air current drawn into the interstitial space SP can be suppressed. Therefore, it is possible to prevent the mist-like cleaning liquid and the low surface tension solvent from entering the gap space SP and adhering to the substrate surface. Further, by rotating the plate-like member 9 to remove the cleaning liquid adhering to the lower surface 90a and the low surface tension solvent, it is possible to prevent the 'month wash liquid or the low surface tension solvent from remaining on the lower surface 90a. When the cleaning process at a specific time is completed, the paddle forming process is then performed. That is, after the cleaning process is completed, the control unit 4 decelerates the rotation speed of the substrate W to a second speed lower than the first speed, thereby accumulating the cleaning liquid from the cleaning liquid and the cleaning liquid on the substrate surface. Wf, so that. One liquid helium is formed into a paddle shape (paddle forming treatment). In the present embodiment, the control unit 4 sets the second speed to 10, continuously supplies the cleaning valve for 9 seconds, closes the cleaning liquid valve 83, and stops the injection of the washing liquid from the cleaning liquid discharge port 96a. Thereby, as shown in FIG. 6(b), a DIW liquid film is formed. Further, the degree is not limited to 1 G - ', but the second speed must be set within a range satisfying the surface tension between the cleaning liquid and the substrate surface Wf. This is because the above conditions must be sufficiently satisfied in order to form the cleaning liquid in a purple form. And after the supply of the DIW, after a certain period of time (the time of 0.5 seconds in the embodiment I29875.doc -28-200908108), the DIW liquid film to be padded becomes substantially uniform on the entire surface of the substrate boundary. Thereafter, the control unit 4 arranges the flood prevention (four) at the third height position. Then, (iv) solvent 76, a low surface tension solvent is ejected from the solvent discharge port. Here, the IPA' IPA prepared in advance in the tank portion 7A is ejected from the solvent discharge port 97a toward the central portion of the surface of the substrate surface Wf at a low flow rate, for example, a flow rate of 1 Torr (mL/min). As shown in Fig. 6 (4), in the center portion of the surface of the substrate w, (1) the central portion of the liquid film is replaced with IPA, and the replacement region SR is formed into a liquid film (displacement region forming process). Three seconds after the supply of the IPA, the control unit 4 accelerates the rotational speed of the substrate w from 1 G rpm to the state in which the supply is continued. Thereby, the replacement region SR is enlarged in the radial direction of the substrate W, thereby replacing the entire substrate surface Wf with a low surface tension solvent (displacement treatment). In the present embodiment, the rotational speed of the substrate w is accelerated in two stages as follows. The control unit 4 accelerates the rotational speed of the substrate W from 10 rpm to 100 rpm in 5 seconds (first). Replacement processing). Thus, by the acceleration of the rotation speed, the centrifugal force acting on the liquid helium (DIW region + IPA region (substitution region SR)) acting on the substrate surface Wf is increased, thereby diverging the DIW, and the replacement region SR is expanded in the radial direction ( Figure 6 (d)). At this time, the thickness of the liquid film on the substrate surface Wf is reduced to a thickness t2 corresponding to the rotation speed, and after a certain period of time (1 second in the center of the present embodiment), all the substrates existing on the outer peripheral portion of the surface of the substrate w are present. W ' ' ϋ and the replacement region is uniformly diffused onto the entire substrate surface Wf such that the entire surface of the substrate surface Wf is covered by the sputum film 129875.doc -29- 200908108. In the second replacement process, the control unit 4 accelerates the rotational speed of the substrate W from 100 rpm to 3 rpm for 5 seconds. This step is performed by replacing the cleaning liquid ("residual mw" in Fig. 7(a)) remaining in the gap between the fine patterns formed on the substrate surface Wf with IPA. In other words, by the acceleration of the rotation speed, IpA flows largely on the surface of the substrate, whereby the inside of the gap of the fine pattern Fp is replaced with IPA (Fig. 7(b)). Thereby, the mw attached to the substrate surface Wf is reliably replaced with IPA. As described above, the acceleration (= (300 - 100) / 0.5) in the second replacement processing is higher than the acceleration (gas 丨〇〇 10) / 0.5 in the i-th replacement processing, whereby the replacement efficiency of the residual DIW can be improved. Further, the used IPA that has been ejected from the substrate W is guided to the third drain tank 25c and discarded. As shown in Fig. 5, the flow rate of the nitrogen gas ejected from the gas discharge port 98a and the outer gas discharge port 993 is maintained at the same flow rate as that in the cleaning process during the period until the completion of the replacement process. In the state in which the blocking member 9 is placed close to the substrate surface Wf, the cleaning process and the replacement process are performed while continuously supplying a relatively large flow rate and a low-speed J gas to the substrate surface Wf. The components of the chemical liquid or the cleaning liquid in the mist contained in the surrounding environment enter the gap space 51&gt;. In particular, in the replacement process, the generation of the watermark caused by the mist in which the cleaning liquid is mixed in the IPA covering the substrate surface Wf can be effectively suppressed. Thus, when the replacement process is completed, the control unit 4 increases the rotational speed of the chuck rotating mechanism 13 to rotate the substrate W at a high speed (e.g., 1 rpm). Thereby, the IPA attached to the substrate surface Wf is taken out, and the drying of the substrate w is performed 129875.doc -30·200908108 (rotary drying) (drying treatment). At this time, a low surface tension solvent enters into the gap of the pattern&apos; thus preventing pattern breakage or watermark generation. Further, the 'gap space SP is filled with nitrogen gas supplied from the gas discharge port 98a and the outer side gas discharge port 99a, so that the drying time can be shortened, and the oxidized substance can be reduced to the yang_I #14c, the main supplier is attached to the substrate. In the liquid component (low surface tension solvent) on w, the generation of the watermark can be more effectively suppressed. In the drying process, the flow rate of nitrogen gas is increased from 100 SLM to MO SLM (Fig. 5), thereby more reliably preventing the wrap of the mist or the like. At this time, the discharge amount from the outside gas discharge port state is hardly changed (increased from % SLM to 1 〇〇 SLM), and on the other hand, the amount of discharge from the gas discharge port _ discharge is greatly increased. The increase (from 5 SLM to 4 〇 slm) allows a nitrogen flow having a relatively high flow rate to be supplied to the central portion of the substrate surface Wf. Thereby, the IPA can be efficiently discharged from the central portion of the substrate toward the peripheral portion. After the drying process of the substrate w is completed, the control unit 4 controls the chuck rotating mechanism 13 to stop the rotation of the substrate W. The supply of nitrogen is desirably carried out for at least a period of time until the rotation of the substrate is stopped. Further, the anti-destructive plate 6 is placed in the retracted position so that the rotating chuck is protruded from above the splash guard 6. Thereafter, the substrate transfer mechanism carries out the processed substrate w from the apparatus, and ends the series of cleaning processes for one of the substrates w. As described above, according to the present embodiment, IPA having a low flow rate of W10 mL (mL/min) is supplied to the central portion of the substrate surface Wf, and the replacement region SR is formed and enlarged. Therefore, compared with the prior art (supplying a large amount of IpA to the surface of the substrate and replacing the entire substrate surface with IPA in one go), the amount of ip a required to replace the entire substrate surface with IPA can be greatly reduced. 129875.doc -31 - 200908108 In the present embodiment, the rotational speed of the substrate w is decelerated to the second speed, and the DIW liquid helium is increased to the thickness u, and the IPA is supplied to the central portion of the surface of the substrate W while maintaining the state. Thereby, the replacement region SR of the IPA is formed at the central portion of the substrate surface Wf. At this time, IpA may be mixed in the DIW region around the replacement region SR in the liquid film on the surface of the substrate. However, since the liquid film on the substrate surface Wf is relatively thick (thickness u), the mixing position can be suppressed. The convection of Marangoni. As a result, it is possible to effectively prevent the substrate surface Wf from being locally dried. Here, the IP A can be continuously supplied while the rotation speed of the substrate w is maintained at the second speed, and the replacement process can be performed. As in the present embodiment, the rotation speed of the substrate w can be accelerated to be higher than the second speed. Rotation speed (1 〇〇 rpm). This is because the distance from the supply position of lpA (the central portion of the surface of the substrate W) to the region of the substrate WL2DIW is increased after the replacement region SR is formed, so that the possibility that the IPA is mixed around the replacement region SR is lowered. Therefore, in the present embodiment, the centrifugal force of the liquid film (DIW region + replacement region SR) acting on the substrate surface is increased by accelerating the rotational speed of the substrate w, and the time required for replacement with the IPA is increased. Get shortened. Further, as the rotational speed increases, the liquid film becomes thinner, and the amount of IPA required to cover the entire substrate surface can be reduced. Furthermore, the replacement process may be terminated at the time when the entire surface of the substrate is covered by the surface IpA. However, in this embodiment, the rotation speed of the substrate W is further increased to 3 rpm, that is, the first step is performed. Since the replacement process is performed, the residual DIW of the fine pattern Fp can be reliably replaced with IpA. Therefore, the destruction of the pattern can be suppressed more effectively. Further, the present invention is not limited to the above-described embodiments, and various modifications may be made in addition to the above embodiments without departing from the scope of the invention. For example, in the above-described embodiment, the rotation speed of the substrate w is accelerated in two stages in the replacement process, but the acceleration may be performed in three or more stages. Further, in the replacement process, the rotational speed of the substrate W can be continuously accelerated. Further, in the above-described embodiment, the replacement region forming process is performed while rotating the substrate W at the same rotation speed as the paddle forming process, that is, the second speed, but the rotation of the substrate W may be stopped or The replacement region forming process is executed in a state of being rotated at a speed lower than the second speed. In short, while maintaining the rotation speed of the substrate at the second speed or lower, the low surface tension solvent is supplied to the central portion of the surface of the substrate to form a replacement region formed of a low surface tension solvent, whereby the same as in the above embodiment can be obtained. Effect. Further, in the above embodiment, IPA is used as the low surface tension solvent, but a mixture of IPA and DIW may be produced in the tank portion 70 and used as a low surface tension solvent. Moreover, the method of producing the mixed liquid is not limited to this. For example, an organic solvent component such as IpA may be generated in-line on the liquid supply path through which the DIW is directed to the liquid supply path (or nozzle) of the shutoff member to generate a liquid mixture. Further, the mixed liquid generating means such as the tank portion is not limited to being disposed in the substrate processing apparatus, and # may mix the mixed liquid generated in another apparatus separately provided with the substrate processing apparatus via the substrate processing apparatus. The member is supplied to the substrate surface wf. Further, a solvent which must contain a surfactant may be used instead of the solvent containing the organic solvent component such as IPA. 129875.doc -33- 200908108

又，上述實施形態中’係使用DIW作為清洗液，但亦可 將含有碳酸水（DIW+C〇2)等對基板表面Wf不具有化學洗淨 作用之成分的液體用作清洗液。於此情形時，亦可將與附 著於基板表面Wf上之清洗液相同組成之液體（碳酸水）及有 機溶劑成分混合而成的液體用作混合液。又，使用碳酸水 作用清洗液，另一方面’混合液亦可使用混合有作為碳酸 水之主成分的DIW及有機溶劑成分者。進而，使用DIW作 為清洗液’另一方面，混合液亦可使用混合有碳酸水與有 機溶劑成分者。總之，只要將與附著於基板表面wf上之清 洗液相同組成之液體及有機溶劑成分混合而成的液體用作 混合液即可。又’作為清洗液，除了 DIW、碳酸水以外， 亦可使用氫水、稀濃度（例如1 ppm左右）之氨水、稀濃度 之鹽酸等。 [實施例] 其次表示本發明之實施例，但本發明並不受下述實施例 之限制’於可符合上述及下述主旨的範圍内當㈣可適當 地添加變更而實施，該等變更均包含於本發明之技術性範 圍内。 圖8係表示比較例中之基板處理方法的時序圖。該比較 例與本發明之實施例（圖5)的最大不同點在於清洗處理與乾 燥處理之間所進行的處理內交。介 处内合。亦即，本發明之實施例 中 如上所述，係於清洗虑理β 月无慝理後進行置換區域形成處理與 置換處理。與此相對，屮赫 、、、 車例中，係於清洗處理後使基板 W之力疋轉速度減速至. ρ ’但液膜為非槳狀態，並且膜 129875.doc •34· 200908108 厚變薄。而且，於維持該旋轉速度之狀態下以低流量（丨〇〇 mL/min)持續16秒供給IpA，從而將基板表面wf上之mw 液膜置換為IPA液膜。之後，使基板冒之旋轉速度加速至 1000 rpm而執行乾燥處理。 f-Further, in the above-described embodiment, DIW is used as the cleaning liquid, but a liquid containing a component which does not have a chemical cleaning action on the substrate surface Wf such as carbonated water (DIW+C〇2) may be used as the cleaning liquid. In this case, a liquid obtained by mixing a liquid (carbonated water) having the same composition as that of the cleaning liquid attached to the substrate surface Wf and an organic solvent component may be used as the mixed liquid. Further, the washing liquid is treated with carbonated water. On the other hand, the mixed liquid may be a mixture of DIW and an organic solvent component which are main components of carbonated water. Further, DIW is used as the cleaning liquid. On the other hand, the mixed liquid may be a mixture of carbonated water and organic solvent. In short, a liquid obtained by mixing a liquid and an organic solvent component having the same composition as the cleaning liquid adhering to the substrate surface wf may be used as the mixed liquid. Further, as the cleaning liquid, in addition to DIW or carbonated water, hydrogen water, a dilute concentration (e.g., about 1 ppm) of ammonia water, or a dilute hydrochloric acid may be used. [Examples] Next, the examples of the present invention are shown, but the present invention is not limited to the following examples, and (4) may be appropriately added and changed within the scope that satisfies the above and the following aspects, and the changes are all implemented. It is included in the technical scope of the present invention. Fig. 8 is a timing chart showing a substrate processing method in a comparative example. The greatest difference between this comparative example and the embodiment of the present invention (Fig. 5) is the processing in-process between the cleaning process and the drying process. Intermediary. That is, in the embodiment of the present invention, as described above, the replacement region forming process and the replacement process are performed after the cleaning reason is not treated. On the other hand, in the case of the 屮, 、, 车, after the cleaning process, the force tumbling speed of the substrate W is decelerated to ρ 'but the liquid film is in the non-paddle state, and the film 129875.doc •34· 200908108 thickening thin. Further, IpA was supplied at a low flow rate (丨〇〇 mL/min) for 16 seconds while maintaining the rotation speed, thereby replacing the mw liquid film on the substrate surface wf with the IPA liquid film. Thereafter, the substrate was subjected to a drying process by accelerating the rotation speed of the substrate to 1000 rpm. F-

利用KLA-Tencor公司製之微粒評估裝置spi_TBI，對以 上述方式藉由比較例而進行了基板處理之基板表面冒[上所 附著之微粒（粒徑：〇·06 μηι以上）之數量進行評估，結果微 粒數乓加了 432個。又，對該基板表面臂進行監視，結果 觀測到圖9(a)所示之微粒分布。再者，於該圖中，白圓線 表不基板W之周端咅ρ，並纟白點表示附著於基板表面冒卩上 之微粒。 另方面對於8片基板W，利用上述微粒評估裝置 SP1_TBI，對藉由本發明之實施例而進行了基板處理之基 板表面Wf上所附著之微粒（粒徑·· 〇〇6 μηι以上）之數量進 行評估，結果微粒數之變化分別為（+9個）、（+53個卜 (-125個）、（-173個）、（_132個）、（·1〇7個)及㈣個），從而 可知，與比較例相比，微粒之附著大幅穩定。又，對該等 8片基板W中的6片基板表面戰行監視，結果觀測到圖 9(b)〜(g)所示之微粒分布。 根據該等結果可知，根據本發明，即便於為減少低表面 張力溶劑之使用量而減小低表面張力溶劑之流量之情形 時’如本發明般藉由實施置換區域形成處理及置換處理， 仍可使基板表面Wf得到良好地乾燥。 [產業上之可利用性] 129875.doc -35- 200908108 本發明可適用於對基板之整個表面實施乾燥處理之基板 處理裝置及基板處理方法，上述基板包括半導體晶圓、光 罩用玻璃基板、液晶顯示用玻璃基板、電漿顯示用玻璃基 板、FED(Field Emission Display)用基板、光碟用基板、 磁碟用基板、磁光碟用基板等。 【圖式簡單說明】 圖1係表示本發明之基板處理裝置之一實施形態的圖。Using the particle evaluation device spi_TBI manufactured by KLA-Tencor Co., Ltd., the surface of the substrate subjected to the substrate treatment by the above-described method was evaluated for the number of particles (particle diameter: 〇·06 μηι or more) attached thereto. As a result, the number of particles was increased by 432. Further, the surface arm of the substrate was monitored, and as a result, the particle distribution shown in Fig. 9 (a) was observed. Further, in the figure, the white circle line indicates the peripheral end 咅ρ of the substrate W, and the white line indicates the particles attached to the surface of the substrate. On the other hand, for the eight substrates W, the number of particles (particle diameter··6 μηι or more) attached to the substrate surface Wf subjected to substrate processing by the embodiment of the present invention is performed by the above-described fine particle evaluation device SP1_TBI. As a result of the evaluation, the change in the number of particles is (+9), (+53 (-125), (-173), (_132), (·1〇7), and (four), respectively. It can be seen that the adhesion of fine particles is largely stabilized as compared with the comparative example. Further, the surface of the six substrates of the eight substrates W was monitored, and the particle distributions shown in Figs. 9(b) to (g) were observed. According to the results of the present invention, according to the present invention, even when the flow rate of the low surface tension solvent is reduced to reduce the amount of the low surface tension solvent, the replacement region forming treatment and the replacement treatment are performed as in the present invention. The substrate surface Wf can be dried well. [Industrial Applicability] 129875.doc -35- 200908108 The present invention is applicable to a substrate processing apparatus and a substrate processing method for drying the entire surface of a substrate, the substrate including a semiconductor wafer, a glass substrate for a photomask, and A glass substrate for liquid crystal display, a glass substrate for plasma display, a substrate for FED (Field Emission Display), a substrate for a disk, a substrate for a disk, and a substrate for a magneto-optical disk. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing an embodiment of a substrate processing apparatus of the present invention.

圖2係表示圖丨之基板處理裝置之主要控制構成的方塊 圖。 圖3係表示圖丨之基板處理裝置中所裝備之遮斷構件之主 要部分的縱剖面圖。 圖4係圖3之A-A'線剖面圖（橫剖面圖）。 圖5係表示圖丨之基板處理裝置之動作的時序圖。 圖6(a)-(e)係表示圖丨之基板處理裝置之動作的模式圖。 圖7(a)、（b)係表示圖1之基板處理裝 处衣置之動作的模式Fig. 2 is a block diagram showing the main control configuration of the substrate processing apparatus of Fig. 2; Fig. 3 is a longitudinal sectional view showing a main portion of a blocking member provided in the substrate processing apparatus of Fig. 3. Figure 4 is a cross-sectional view taken along line A-A' of Figure 3 (cross-sectional view). Fig. 5 is a timing chart showing the operation of the substrate processing apparatus of Fig. 5; 6(a) to 6(e) are schematic views showing the operation of the substrate processing apparatus of Fig. 6; 7(a) and 7(b) are views showing the mode of operation of the substrate processing apparatus of Fig. 1.

吗〇1示衣示比較例 I —必低爽----- «ν «Τ ^ sj 〇 圖9(aHg)係表㈣*比較例及實施例 面上之微粒分布的圖。 {之基板表 圖10(a)、（b)係表示先前之基板處 圖。 直之動作的模式 【主要元件符號說明】 旋轉夹盤 控制單元（控制機構） I29875.doc •36· 200908108 7 溶劑供給單元（供給機構） 13 夾盤旋轉機構（基板旋轉機構） 17 夾盤銷（基板保持機構） J 旋轉轴 SR 置換區域 Wf 基板表面 W 基板 C. ί_ 129875.doc 37·〇 示 1 shows the comparative example I - must be low----- «ν «Τ ^ sj 〇 Figure 9 (aHg) is a table (four) * Comparative examples and examples of the particle distribution on the surface. {Substrate Table Figure 10 (a), (b) shows the previous substrate diagram. Straight motion mode [Main component symbol description] Rotary chuck control unit (control mechanism) I29875.doc •36· 200908108 7 Solvent supply unit (supply mechanism) 13 chuck rotation mechanism (substrate rotation mechanism) 17 chuck pin (substrate) Holding mechanism) J Rotary axis SR Replacement area Wf Substrate surface W Substrate C. ί_ 129875.doc 37·

Claims (1)

200908108 十、申請專利範圍： 1. 一種基板處理方法，其特徵在於包括： 屬式處理步驟’其係一面使大致水平狀態之基板以第 1速度旋轉，一面使用處理液對上述基板表面實施濕式 處理； 名形成步驟，其係使上述基板之旋轉速度減速至第2 速度，從而使上述處理液之液膜呈槳狀形成於上述基板 上； 置換區域％成步驟，其係一面將i述基板之旋轉速度 維持於上述第2速度以下，—面將表面張力低於上述處 理液之低表面張力溶劑供給至上述基板之表面中央部， 形成上述低表面張力溶劑所成之置換區域； 置換步驟，其係將上述低表面張力溶劑供給至上述表 面中央。p ’使上述置換區域沿上述基板之徑向擴大，將 正個上述基板表面置換為上述低表面張力溶劑丨及 乾燥步驟，其係於上述置換步驟後，自上述基板表面 去除上述低表面張力溶劑，使該基板表面乾燥。 2. 如請求項1之基板處理方法，其中 於上述置換步驟中，以高於上述第2速度之旋轉速度 使上述基板旋轉。 X 3. 如請求項2之基板處理方法，其中 於上述置換步驟中，上述A柘炜 ㈣錢隨著時間之 經過而加速。 4 ·如w求項3之基板處理方法，其中 I29875.doc 200908108 於上述置換步驟中’上述基板之旋轉速度以多個階段 進行加速’加迷旋轉速度時之加速度隨著上述旋轉速度 之增大而提高。 5. 一種基板處理裝置，其係於對基板表面使用處理液之濕 式處理後，利用表面張力低於上述處理液之低表面張力 心劑來置換上述基板表面上之上述處理液後，自上述基 板表面去除上述低表面張力溶劑，使上述基板表面乾 燥’其特徵在於包括： 0 基板保持機構，其係以大致水平姿勢保持基板； 基板旋轉機構，其係使保持於上述基板保持機構之基 板繞特疋之旋轉轴而旋轉； 供給機構，其係將上述低表面張力溶劑供給至保持於 上述基板保持機構之上述基板的表面中央部；及 控制機構，其係控制上述基板旋轉機構以調整上述基 板之旋轉速度； 上述控制機構將上述濕式處理中之旋轉速度設定為第 Li 1速度，另一方面，於供給上述低表面張力溶劑前使旋 轉速度減速至第2速度，從而使上述處理液之液膜呈槳 狀形成於上述基板上； 上述供給機構在上述基板之旋轉速度維持於上述第2 速度以下的狀態下，供給上述低表面張力溶劑，以於上 述基板之表面中央部形成上述低表面張力溶劑所成之置 換區域’繼而將上述低表面張力溶劑供給至上述置換區 域，使上述置換區域沿上述基板之徑向擴大，從而將整 129875.doc 200908108 個上述基板表面置換為上述低表面張力溶劑。 6.如請求項5之基板處理裝置，其中 上述控制機構係於形成上述置換區域後，使上述基板 之旋轉速度加速至高於上述第2速度的旋轉速度。 (200908108 X. Patent Application Range: 1. A substrate processing method, comprising: a genus processing step of: performing a wet process on a surface of the substrate using a treatment liquid while rotating a substrate in a substantially horizontal state at a first speed a name forming step of decelerating the rotation speed of the substrate to a second speed, so that the liquid film of the processing liquid is formed in a paddle shape on the substrate; the replacement region % is a step, and the substrate is The rotation speed is maintained at the second speed or lower, and the surface is supplied with a low surface tension solvent having a surface tension lower than the processing liquid to the central portion of the surface of the substrate to form a replacement region formed by the low surface tension solvent; It supplies the above low surface tension solvent to the center of the above surface. p' expanding the replacement region in the radial direction of the substrate, replacing the surface of the substrate with the low surface tension solvent and drying step, and removing the low surface tension solvent from the surface of the substrate after the replacing step The surface of the substrate is dried. 2. The substrate processing method according to claim 1, wherein in the replacing step, the substrate is rotated at a rotation speed higher than the second speed. X. The substrate processing method of claim 2, wherein in the replacing step, the A (4) money is accelerated as time passes. 4. The method of substrate processing according to item 3, wherein I29875.doc 200908108 in the above-mentioned replacement step, 'the rotation speed of the substrate is accelerated in multiple stages'. The acceleration when the rotation speed is increased increases with the above rotation speed. And improve. A substrate processing apparatus which, after the wet treatment using a treatment liquid on a surface of a substrate, replaces the treatment liquid on the surface of the substrate with a surface tension lower than a low surface tension core agent of the treatment liquid, Removing the low surface tension solvent from the surface of the substrate to dry the surface of the substrate. The method includes: 0 a substrate holding mechanism for holding the substrate in a substantially horizontal posture; and a substrate rotating mechanism for winding the substrate held by the substrate holding mechanism a rotating mechanism that supplies the low surface tension solvent to a central portion of a surface of the substrate held by the substrate holding mechanism; and a control mechanism that controls the substrate rotating mechanism to adjust the substrate The rotation speed of the wet processing is set to the Li 1 speed, and the rotation speed is decelerated to the second speed before the supply of the low surface tension solvent, thereby causing the treatment liquid a liquid film is formed on the substrate in a paddle shape; the supply mechanism is The low surface tension solvent is supplied to the central portion of the surface of the substrate to form a replacement region formed by the low surface tension solvent in a state where the rotation speed of the substrate is maintained at the second speed or lower, and the low surface tension solvent is formed. The surface is supplied to the replacement region, and the replacement region is enlarged in the radial direction of the substrate to replace the surface of the substrate with the low surface tension solvent. 6. The substrate processing apparatus according to claim 5, wherein the control means accelerates a rotation speed of the substrate to a rotation speed higher than the second speed after forming the replacement area. ( 129875.doc129875.doc
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