TW200905225A - Method and device for aligning a test system with an electric element to be tested - Google Patents
Method and device for aligning a test system with an electric element to be tested Download PDFInfo
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- TW200905225A TW200905225A TW97115110A TW97115110A TW200905225A TW 200905225 A TW200905225 A TW 200905225A TW 97115110 A TW97115110 A TW 97115110A TW 97115110 A TW97115110 A TW 97115110A TW 200905225 A TW200905225 A TW 200905225A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6489—Photoluminescence of semiconductors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2801—Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP]
- G01R31/281—Specific types of tests or tests for a specific type of fault, e.g. thermal mapping, shorts testing
- G01R31/2813—Checking the presence, location, orientation or value, e.g. resistance, of components or conductors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
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- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Tests Of Electronic Circuits (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
Description
200905225 九、發明說明: 【發明所屬之技術領域】 η ΐ $ =關於測試或測量電元件的特性,特別是導電 體或ν電體及電子組件的群組。 本發明關於例如測試存在於連接支撐上的導體,例 如印刷,路以及那些存在於平板螢幕上的積體電路上 者不°兩疋電水或液晶LCD(Liquid Crystal Display)、 OLED (有機♦光二極體,Light-Emitting Diode) LCOS(石夕上液晶,LiqUid Crystal on Silicon)等。 【先前技#f】 在行銷之前,電子組件,例如積體電路、平板螢幕 及印刷電路等,皆要接受測試,其形成它們製造方法 中整體的一部份。所執行的一些測試提供了建立連續 性、絕緣性、阻抗性、特徵阻抗(zo)、電容或導體之自 感’或安裝在該電路上的被動或主動組件之手段。所 測試的導體大致為導電跡線,其分佈在一基板之一層 或數層電氣絕緣層之上。形成在不同絕緣層上的導電200905225 IX. Description of the invention: [Technical field to which the invention pertains] η ΐ $ = for testing or measuring the characteristics of electrical components, in particular conductors or groups of ν electrical and electronic components. The present invention relates to, for example, testing conductors present on a connection support, such as printing, roads, and those integrated circuits that exist on a flat screen, such as liquid crystal or liquid crystal LCD (OLED). Polar-Emitting Diode) LCOS (LiqUid Crystal on Silicon). [Previous Technique #f] Prior to marketing, electronic components, such as integrated circuits, flat screens, and printed circuits, were tested and formed part of their overall manufacturing process. Some of the tests performed provide a means to establish continuity, insulation, impedance, characteristic impedance (zo), capacitance or conductor self-inductance or passive or active components mounted on the circuit. The conductors tested are generally conductive traces distributed over one or a plurality of layers of electrical insulation. Conductive formed on different insulating layers
跡線可由通過該絕緣層之金屬化孔來連接,該金屬化 孔被稱為“介層窗’’(Vias)或“微介層窗”(Microvias)。 藉由降低電子組件之尺寸’印刷電路跡線的密度 可顯著增加。這些電路的測試因此非常重要。特別是, 必須檢查在導電跡線上沒有斷線,在該導電跡線之間 也沒有短路,該導電跡線數目可達到數千,且其可分 佈在數十層之上。對於具有最高階積集度的電路而 言,該等測量係對於等級在數十微米(//m)的距離所區 隔的點之間進行。 傳統的接點測試機,其以針床來運作,已經證明 同時從技術及經濟的角度而言皆以到達它們的極限。 200905225 實際上,針床在大部份複雜的電路中已不再相容於區 格該等測試點的距離。針床代表的成本係隨著小型化 的程度成指數增加,且其可靠度亦相同地降低。 “ 一些印刷電路製造線包括自動光學檢測(AOI, “Automatic Optical Inspection”),其允許一操作者在一’ 檢測螢‘幕上觀看導電跡線中是否存在可見的短路或斷 線。但是’此解決Μ並不允許觀相形成於該電路 之内層上的跡線,以及檢查到介層窗的積集度,也不 c它測量,例如阻抗測量(電阻、電感或電容 的測夏)。 為了避免這些問題,目前已經開發出 其中待測試的導體之= 射的電子由—強電場來加 j鍍錫鉛的導體,所使用的光源可為一短τ干: =電子束亦可允許4==¾加使】 係根據該主要(入射)電子之能量。牛似π加,其 某些測試工具結合光束使用以及電子收隹雷托 的網路,藉由相對地注人電子的禮=收木電極 膜其可允許電流被注入到待測試的 效應亦可用於注入電子到待 斤揭不。该光電 案w_6細94玉中=蝴路,如專利申請 工呈利用一或多個光束之測試工呈需抄P" 對於㈣試的電路來精確地“ 一。該光束必須準確地施加於次反之亦 允許取得有意義的測量結果。、、#、兀牛上,藉以 200905225 關料%。像〜:::义2位以仏例如 提供的標章即可辨識屮致使在待測試電路上 機與待測試的電路支撐之間必J㈡影 於真空抽吸期間很難維持,其係:於==己合 ^的;械性扭曲。此外,有時候需要㈣ 念ί 3攝3;!測試電路的機械基準。當“部 ΐϊϊ:ΐ之定位非常不準確。在其它測試工具ί = 係用於傳送待測試電路的影像 的攝Γ機疋,該雷射提供的波長為紫外線 仆巳该光學系統一般會對該雷射波長進行最佳 所以機,捉到在可見光譜中的波長。 非消色差系統要貴得多。㈣色差7^予系統’其比 Μ後ϋ ί該基板中可觀察到膨服/收縮J見象,其可 為,像(根據軸向而不同)。為了考慮這些現象 位该雷射光束時必須考慮大量的電路點。 田 付p τ ” #測試的f路提供一種方法及定 雜if成;可間易地使用,且不會增加測試工具的複 【發明内容】 本發明係觀察到於存在有一收集電場時 ==數目在當施加-光束到-電氣 時係接近於零,並在當其正確地集中在一 央時即到達-最大值。所以使用一光束,不僅可二 測試,例如絕緣及電氣連續測試,但亦相對於該測試 200905225 ==:試的電路’且在需要時,相對於該測 更精確而g,本發明提供一種設置一 的表面上之方法。根據-範例,該方法包i以 U:fl置該電路在導電元件之測試或測量裝置中, 其包含至少一光束來源,及一控制單元,用以 光束在該電路表面上數個撞擊點, σ ^ 電路表面上數個撞擊點,藉以在該電路=上產生, 該流?的強度係根據在該光束之撞擊點處 在每個撞擊點處產生之粒子流出的 強度,交化,並取得在該電路表面上導電元件的位置。 根據-範例,該光束產生i光通量在該電路表 在該電路表面上導電元件的位置係由所產生 螢光通量的強度變化來得到。 根據一範例,該光束產生一電子通量,豆The traces may be connected by metallized holes through the insulating layer, which are referred to as "vias" or "microvias." By reducing the size of the electronic components 'printing The density of circuit traces can be significantly increased. The testing of these circuits is therefore very important. In particular, it must be checked that there are no wires on the conductive traces, and there is no short circuit between the conductive traces. The number of conductive traces can reach several thousand. And it can be distributed over tens of layers. For circuits with the highest degree of integration, these measurements are made between points that are separated by a distance of tens of micrometers (//m). Conventional contact testers, which operate on needle beds, have proven to reach their limits both technically and economically. 200905225 In fact, needle beds are no longer in most complex circuits. The distances of the test points are accommodated in the area. The cost represented by the needle bed increases exponentially with the degree of miniaturization, and its reliability is also reduced. “Some printed circuit manufacturing lines include automatic optical inspection (AOI, “ Au Tomatic Optical Inspection"), which allows an operator to see visible shorts or breaks in the conductive traces on a 'detection' screen. But 'this solution does not allow viewing of the traces formed on the inner layer of the circuit, as well as checking the integration of the vias, nor does it measure, such as impedance measurements (resistance, inductance or capacitance measurements) ). In order to avoid these problems, it has been developed that the conductor of the conductor to be tested is composed of a strong electric field and a conductor of tin-lead-lead, and the light source used may be a short τ dry: = the electron beam may also allow 4 ==3⁄4Additional] is based on the energy of the main (incident) electron. The cow is like π plus, and some of its testing tools combine the use of the beam with the network of the electronic receiving thunder. By relatively injecting the electrons, the electric electrode can allow the current to be injected into the effect to be tested. Injecting electrons into the charge. The photoelectric case w_6 is fine 94 jade = butterfly road, if the patent application worker is using one or more beams, the tester is required to copy P" for the (four) test circuit to accurately "1. The beam must be accurately applied to the time On the contrary, it is also allowed to obtain meaningful measurement results.,, #, 兀牛, by 200905225% of the material. Like ~::: meaning 2 digits can be identified by the stamp provided, for example, so that the circuit to be tested is The circuit support to be tested must be difficult to maintain during vacuum pumping. It is: ===^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ Mechanical benchmark. When the “Department: ΐ position is very inaccurate. In other test tools ί = is a camera for transmitting images of the circuit to be tested, the laser provides a wavelength of ultraviolet light. The optical system generally optimizes the wavelength of the laser, so that it is captured. The wavelength in the visible spectrum. Non-achromatic systems are much more expensive. (4) Color difference 7^ to the system 'The ratio Μ ϋ ί 膨 The substrate can be observed in the expansion/contraction J, which can be, like (depending on the axial direction). In order to consider these phenomena, a large number of circuit points must be considered when positioning the laser beam.田付p τ ” #测试的路路 provides a method and a fixed-form; can be easily used without increasing the complexity of the test tool. [Invention] The present invention is observed in the presence of a collecting electric field == number When applying - beam to - electrical, it is close to zero, and when it is correctly concentrated at one center, it reaches the maximum value. Therefore, using one beam can be used not only for two tests, such as insulation and electrical continuous testing, but also In contrast to the test 200905225 ==: Trial circuit 'and, where necessary, more accurate with respect to the measurement, the present invention provides a method of setting a surface. According to an example, the method package i is U:fl The circuit is provided in a test or measuring device for a conductive element, comprising at least one beam source, and a control unit for a plurality of impact points of the light beam on the surface of the circuit, σ ^ a plurality of impact points on the surface of the circuit, thereby The circuit = is generated, the intensity of the flow is based on the intensity of the particles flowing out at each impact point at the point of impact of the beam, and the position of the conductive elements on the surface of the circuit is taken. It - example, the light-generating light flux i accordance with an example, which generates a beam of the electron flux circuit table position of the conductive element obtained from the Department of fluorescence intensity changes of the flux generated on the circuit surface of the beans.
離開在該電路表面上導電元件,在該電路表^上I =件的位置係由所產生之電子通量中電子數量變化 得到。 个 根據一範例,該導電元件的位置基於一撞螌 位置來決定,其中所產生的電子通量的數量到達二最 大值。 取 根據一範例,該導電元件的位置基於相鄰撞擊點 之位置來決定’其呈現出在所產生的電子通量中 數量之間最大的變化。 根據一範例’該方法包括以下步驟:放置一電子收 集電極靠近於該電路的一表面;在該電路之表面上數 個,處進行測量,每個在一點處的測量包含施加集中 在該電路上該點之該光束,由該電極收集在由該g路 射出的電子通量中的電子,並測量由該電極放射的一 200905225 信號之特性;及根據每次測量期間所測量的信號之 性來決定在該電路表面上導電元件的位置。 根據一範例,該方法包含有步驟來在該光束的至 少一次發射的序列之間重新初始化該導電元件 位。 根據一範例’該導電元件電位重新初始化步 含於導電元件與電壓源之間建立—電氣接點 不接觸到該導電元件之情況下之電子注入。 @ 根據一棘例,所要設置的導電元件為金屬製。 根據一範例,在該電路表面上的撞擊點 矩陣組態來散佈。 龈 根據一範例,在該電路表面上的撞擊點係根 =組態以-固定間距來散佈,其中導電元件的位置 匕3數個測量系列,其每一個使用一矩陣組鲅, =續系列的測量之間的矩陣組態具有相同J減小的 低诹一靶例,琢光束為—s酊尤來 〇 範例’該雷射光束以—脈衝方式放射,並 呈現小於240nm之波長。 w Λ據二範例/該方法包含有步驟來校準用於定位 ίίΐί電路表面上的構件,其中在使用-校準測 傳送到該定位構件之命令信號的ί』 一 μ先束之彳里擊點的位置之間建立一對應表。 根據-制’該方法包含有步 電7°件決定的位置來決定該電路組態。 則導 下㈣本發Λ亦關於一種設置-電路的方法,其包含以 a .,、定在該電路表面上至少兩個導電元件之位 200905225 先蚊義的方法,並用於使用對於兩個導 電7L件决疋的位置來決定該電路組熊。 此之電元&選紐得它們彼Leaving the conductive elements on the surface of the circuit, the position of the I = component on the circuit is derived from the change in the amount of electrons in the generated electron flux. According to an example, the position of the conductive element is determined based on a collision position, wherein the number of generated electron fluxes reaches the two maximum values. According to an example, the position of the conductive element is determined based on the position of the adjacent impact point' which exhibits the greatest change between the number of electron fluxes produced. According to an example, the method comprises the steps of: placing an electron collecting electrode close to a surface of the circuit; measuring several on the surface of the circuit, each measurement at one point including application focusing on the circuit The beam at the point, the electrode collects electrons in the electron flux emitted by the g path, and measures the characteristics of a 200905225 signal emitted by the electrode; and according to the nature of the signal measured during each measurement The position of the conductive elements on the surface of the circuit is determined. According to an example, the method includes the step of reinitializing the conductive element between sequences of at least one transmission of the beam. According to an example, the conductive element potential reinitialization step is established between the conductive element and the voltage source - the electron injection in the case where the electrical contact does not contact the conductive element. @ According to a spine example, the conductive element to be placed is made of metal. According to an example, the impact point matrix configuration on the surface of the circuit is spread.龈 According to an example, the impact point on the surface of the circuit is rooted = configuration is spread at a fixed pitch, where the position of the conductive element is 匕 3 several measurement series, each using a matrix group 鲅, = continued series The matrix configuration between measurements has the same J-reduced low-thickness target, and the xenon beam is -s 酊 〇 〇 ' ' ' ' ' ' ' ' ' ' ' ' 该 该 该 该 该 该 该 该 ' ' ' ' ' ' ' ' w 二 范例 / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / A correspondence table is established between the locations. The circuit configuration is determined by the method in which the method includes a step determined by the step of 7°. [4] The present invention also relates to a method of setting a circuit comprising a method of a., a position of at least two conductive elements on the surface of the circuit 200905225, and for use for two conductive The position of the 7L piece determines the circuit group bear. This is the electric &
,隹虹Λ據—範例’該電路組態之決定包含相對於- A 準軸來決定該電路之旋轉角度。 、土 半釉來决疋忒修正係數來決定一電路導體的位置。 據_^,該方法包含有步驟來相對於-基準 本發明亦關於一種測試電路的方法,盆 施加於該電路中一導電元件的第一位置,電在=束 ,光束的效應之下被釋放,所釋放的n 口 f亟:收集,測量來自該電極之信號的“且;; 電亂特性由該測量取得。根據—範例,該方 ==置來根據設置-先前定義的電路之方法來 據先前料,其包括根 本發明亦關於用於電子式測試或測量—電路之 v電:件的裝置,包含:至少一光束來源,及一控制單 :在該電路表面上數個撞擊點,藉 以在3亥電路表面上產生—粒子通量,盆 的性質。根據;例:該裝 ϊΓ=?=ΐ擊點處產生的粒子通量的強度 =化’並由在^路表面上導電元件的位置來取得這 200905225 根據一範例’該光束產生一螢光在該電路表面 上’其中該測試裝置係設置成由所產生的榮光之強度 變化來取得在該電路表面上導電元件之位置。 又 根據一範例,進入或離開一導電元件的電子通量 係由該光束在該電路表面上產生,其中該測續奘罟孫 設置成由所產生之電子通量中電子數量變化來^到^ 該電路表面上導電元件的位置。 根據一範例,該裝置係用於基於該撞擊點的位置 來決定該導電元件的位置,其中所產生的電子通 數量到達一最大值。 根據一範例,該裝置係用於基於撞擊點之位置 決定該導電元件的位置,其呈現出在所產 量中電子數量之間最大的變化。 王的晃千通 根據-範例,該裝置包含:至少一電 :試,件,用於,行在該電路表面上數個 ;;;亡:由該電極收集在由該== Ο 胜μ中的電子,並測量由該電極放射的一俨號之 Ξ -匕1該5制單元用於根據每次測量期“ ί唬之特性來決定在該電路表面上導電元件的位 射的皮根據一範例,該裝置用於在該光束的至少-士菸 射的序列之間重新初始化該導電元件的電位。夕-人發 在,道根/一範例,該導電元件電位的重新初妗化係ώ 不接導電元件之情況下之電子疋在 根據一範例,所要設置的導電元件為金屬製。 12 200905225 根據一範例,該裝置用於進行發射一光束 表面上的撞擊點之上,其係根據—矩陣組態來散^。 根據一範例,該裝置用於進行發射一光束 岔表面上的撞擊點之上’其係根據一矩陣組態以二】 j距來散佈、’、在兩個連續系列的測量之間的组 悲具有相同或減少的間距。 根據一範例,該光束為一雷射光束。 根據一範例,該雷射光束以一脈衝方式輸出,並 呈現小於240nm之波長。 叭掏出,並 υ Λ據r範例’雜置用於校準用於使用—校準測 號的數值與該光束之撞= 定的位^基㈣料導電元件決 根據一範例,該裝置用於決定在該電路 电元件的位置,並基於對於該兩個 的位置來決定該電路的位置。 冤凡件决疋 ’難置仙於__導電元件, 使传它們彼狀間儘可能地遠離。 守电兀仵 株太Λ據—範例’該裝置用於基於對於該兩個導電元 =決疋的位置來決定相對於一基準軸該電路的二轉角 根據一範例,該裝置用於決定 許-電路導體的位置相對於—基準軸^定錄允 本發明亦關於測試構件的使用, 中來測試或測量導電元件,以根 ===一裝置 導電元件在-電路表面上,此的方法設置一 此裝置包含:至少一光束來 13 200905225 源’及一控制單元’以施加該光束到該電路表面上數 個撞擊點。 【實施方式】 圖la、圖lb、圖2所示為可以實施根據本發明之 設置方法的測試裝置。 圖la中所示的測試裝置在此實例中具有“晶片載 具”(chip carrier)或“1C 封裝基板,,(IC package Substrate) 型式之待測電路5。此係該火星間隙型式之互連支撐, 其使得具有一相當高的連接密度之該半導體晶片型式 的一電子組件之互連間距,其要被調整到lmm等級之 一印刷電路間距。電路5包含一絕緣基板5a,配置在 基板5a之上表面上的導電跡線,配置在基板5a之下表 面上的導電跡線,及通過該基板之跡線5b(包含“介層 窗”的跡線)。每條跡線包含在該基板的上表面上至少一 接觸墊5c,及/或在該基板的下表面上至少一接觸墊 5d。接觸墊5c例如為C4類型(“受控崩潰晶片連接,,, Controlled Collapsed Chip Connection)或具有一金屬被 覆層(金、鎳/金、鉑、具有或不具有鉛的錫等)。接觸 塾5d例如為BGA(球格拇陣列”,Ball Grid Array)型 式。這些多種接觸塾在基板5a的表面上配置成矩陣型 式。 該測試裝置包含一裝置1,其供應一雷射光束2, 例如一紫外雷射光束、配置在電路5之上的一電子收 集板3’ 一導電墊7之網路,一非等向性導電片6,其 提供每個接觸墊5d到網路7中個別接觸墊7a之連接, 及一測量儀器裝置4,其連接在收集板3與網路7之 間。裝置1包含一來源la,其供應雷射光束2 ,及折射 構件lb,其導引光束2到待測電路5之區域。板3基 本上對雷射光束2為透明,並包含連接到裝置4之導 14 200905225 電區域3a。裝置4包含一來源電壓如, 二 4b,以測量一電氣特性,例如安培 ^,设備 接觸塾7a被定址,並連接至儀器裝置4轉^允許-一 CNTL控制裝置所控制來施加雷射 ^件由 電路之-導電跡線上的位置,在此例中為束一接則 一導電元件之測試包含例如—步驟, e° 墊7及非等向性導電片6之網路提供驟電 兀件,以及施加雷射光束2到導電跡線& 導電 電荷藉由光電效應由導電元件取出,並該 來自收集板3之信號的特性被測量,及該 f。 電氣特性’例如該導體的連續性,或相 另-導體的電氣絕緣,即可由該測量中取得。"電路中 圖lb所示的測試裝置不同於網路7 1 6由一組探針6a(或“釘”,肋⑴來取代 釘如 方面連接至待測電路5之一接觸墊5d,如一 CNTL裝置控制的—開關的連接至儀器裝置*面、、工由 所測試裝置整個為光學式,並允許在盘 =電路5無任何接觸下進行測試。其—方面二 裝置1T來施加雷射光束2T到電路5的上 對於上表面之收集板3Τ,另一方面,—事 =光束2Β到電路5的下表面,及相對^表Β面;: 市板3Β。一儀器裝置4Τ連接至板3Τ,及儀器 連接至板3Β。板3Τ、3Β由間隔器8丁、8Β保^ ^ 5的表面有-距離。整個裝置由控制裝置 控制。 1 圖1a及圖2所示的雷射光束2、2T、2B根據W0 2006/082294之教示亦可用於注入電子到待測電路。 ,電子注人例示於圖3’其經由待測電路5提供導電跡 線5b之更為I平細的細節’並連接—下方接觸塾%到 15 200905225 由一焊球5f安裝於其上的一上 的電位小於電路5之接觸塾5c = 光束取得來自外* 3。_該反射的 s每個利用電荷dQ注入的電 電位即由注人電子到其上而降低。 ^于動 為了能夠準確地施加雷射光束2、2丁、2 墊,、一烊球5f或一後方塾5d上 = 相對於雷射2移動的軸向精確地定位。寻貝J電路5 L頁 效應放範例’該連接塾基於事實上由光電 二,=碰到待測電路之一電氣絕緣區域。相反 4果该光束正確地位在一導電墊的中央,由光電 效應放射的電子齡日gR氣異、由尤笔 數目在告道數即為最大。換言之,放射的電子 ,由ί:=ί 由雷射光束覆蓋時即會增加。所以 ^可束在該電路表面之上的數個點,其 月b在该電路表面上建立導電區域的一影像。 法目示為實施此絲方法的範例。在此,該方 = f ;相對於雷射光束2的兩個行進軸又丫來設 戶二待,路5 ’其原點為0,並形成-基準OXY : = 待測電路5中暴露於光束2之表面t 根ίΓχ,組恶散佈的導電塾………也就是 —&心軸上一 0,Χ,Υ,基準來配合。軸X及X,形成 角度Θ,軸Υ及Υ,亦同。 /风 範圍在激,待測電路係配置在一已知位置,其誤差 墊、美進。要定位該電路所設置的樣式(接觸 土 /等)因此可在數百以爪寬的範圍中發現。為了 16 200905225 為盥何混淆’要設置的樣式之選擇 域充份遠離,或設置在—區域的邊緣 5。’其中斜體密度對於該導體過高,而無法彼此區 设置電路5在此處包含連續設置兩個基準導電墊 Υ座標中。該基準墊例如為接觸塾u 等):該基準塾之-的中央,此Γ為接 =中央,被採用形成該待測電路之座標0,χ,γ, 之原點Ο而其匕基準塾12相對於點〇,之中心位置According to the example, the decision of the circuit configuration includes determining the rotation angle of the circuit relative to the -A quasi-axis. The soil is semi-glazed to determine the correction factor to determine the position of a circuit conductor. According to the method, the method comprises a step relative to the reference. The invention also relates to a method for testing a circuit, the pot being applied to a first position of a conductive element in the circuit, the electric being released under the effect of the beam, the beam The released n port f亟: collects and measures the signal from the electrode "and;; the electrical disturbance characteristic is obtained by the measurement. According to the example, the square == is set according to the setting - the previously defined circuit method According to the foregoing, it includes a fundamental invention relating to a device for electronic testing or measuring-circuiting, comprising: at least one beam source, and a control sheet: a plurality of impact points on the surface of the circuit, thereby Produce on the surface of the 3H circuit - particle flux, the nature of the basin. According to; for example: the installation = ΐ = the intensity of the particle flux generated at the point of attack = 'and' by the conductive elements on the surface Position to achieve this 200905225 According to an example 'the beam produces a fluorescent light on the surface of the circuit' wherein the test device is arranged to take the intensity change of the generated glory to obtain the position of the conductive element on the surface of the circuit. According to an example, an electron flux entering or exiting a conductive element is generated by the light beam on the surface of the circuit, wherein the measurement is performed by a change in the amount of electrons in the generated electron flux. The position of the conductive element on the surface of the circuit. According to an example, the apparatus is adapted to determine the position of the conductive element based on the position of the impact point, wherein the number of generated electron fluxes reaches a maximum value. According to an example, the apparatus is The position of the conductive element is determined based on the position of the impact point, which exhibits the largest change between the number of electrons in the output. According to the example, the device comprises: at least one electricity: test, piece, For the number of rows on the surface of the circuit;;; death: the electrons collected by the electrode in the == Ο μ μ, and measure the 俨 放射 匕 该 该 该 该 该 该 该The unit is adapted to determine the position of the conductive element on the surface of the circuit according to the characteristics of each measurement period. According to an example, the apparatus is used to reinitialize between at least the sequence of the smoke of the beam. The The potential of the conductive element. In the case of Dogan/Personal, the re-priming of the potential of the conductive element is the case where the conductive element is not connected to the conductive element. According to an example, the conductive element to be provided is made of metal. 12 200905225 According to an example, the device is used to transmit a point of impact on the surface of a beam of light, which is based on a matrix configuration. According to an example, the device is used to transmit a beam of light on the surface of the impact point on the surface, which is based on a matrix configuration with two j-distances, ', between two consecutive series of measurements Have the same or reduced spacing. According to an example, the beam is a laser beam. According to an example, the laser beam is output in a pulsed manner and exhibits a wavelength of less than 240 nm. According to the r example, the sample is used for calibration. The position of the circuit is determined at the position of the electrical component of the circuit and based on the position of the two.冤 件 件 ’ ’ 难 难 仙 于 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Guardian Λ Λ — - Example 'The device is used to determine the two corners of the circuit relative to a reference axis based on the position of the two conductive elements = decision. According to an example, the device is used to determine the The position of the circuit conductor is relative to the reference axis. The invention also relates to the use of the test member. The test element is used to test or measure the conductive element to the root === a device conductive element on the surface of the circuit. The apparatus includes: at least one beam of light 13 200905225 source 'and a control unit' to apply the beam to a plurality of impact points on the surface of the circuit. [Embodiment] Figs. 1a, 1b, and 2 show a test apparatus in which the setting method according to the present invention can be carried out. The test apparatus shown in FIG. 1a has a "chip carrier" or "1C package substrate, (IC package Substrate) type of circuit to be tested 5 in this example. This is the interconnection of the Mars gap type. Supporting, which results in an interconnection pitch of an electronic component of the semiconductor wafer type having a relatively high connection density, which is adjusted to a printed circuit pitch of one of the lmm grades. The circuit 5 comprises an insulating substrate 5a disposed on the substrate 5a a conductive trace on the upper surface, a conductive trace disposed on a lower surface of the substrate 5a, and a trace 5b (a trace including a "via") passing through the substrate. Each trace is included in the substrate At least one contact pad 5c on the upper surface, and/or at least one contact pad 5d on the lower surface of the substrate. The contact pad 5c is, for example, of the C4 type ("Controlled Collapsed Chip Connection") or has A metal coating (gold, nickel/gold, platinum, tin with or without lead, etc.). The contact 塾 5d is, for example, a BGA (Ball Grid Array) type. These various contact ridges are arranged in a matrix form on the surface of the substrate 5a. The test device comprises a device 1 which supplies a laser beam 2, For example, an ultraviolet laser beam, an electron collecting plate 3' disposed on the circuit 5, a network of conductive pads 7, and an anisotropic conductive sheet 6, which provides each of the contact pads 5d to the network 7. The connection of the contact pad 7a, and a measuring instrument device 4, which is connected between the collecting plate 3 and the network 7. The device 1 comprises a source la, which supplies a laser beam 2, and a refractive member lb which guides the beam 2 To the area of the circuit under test 5. The board 3 is substantially transparent to the laser beam 2 and comprises a conductor 14 200905225 electrical region 3a connected to the device 4. The device 4 comprises a source voltage such as two 4b to measure an electrical characteristic. , for example, Ampere ^, the device contact port 7a is addressed and connected to the instrument device 4 to allow - a CNTL control device to control the position of the laser on the conductive trace on the circuit, in this case Test example of a conductive component a step, the e° pad 7 and the network of the anisotropic conductive sheets 6 provide a flashing element, and the application of the laser beam 2 to the conductive traces & the conductive charge is taken out by the conductive element by the photoelectric effect, and the The characteristics of the signal of the collecting plate 3 are measured, and the electrical characteristics 'such as the continuity of the conductor, or the electrical insulation of the other conductor, can be obtained from the measurement." The test shown in Figure lb of the circuit The device is different from the network 7 16 by a set of probes 6a (or "nails", ribs (1) instead of nails, such as a contact pad 5d connected to the circuit under test 5, as controlled by a CNTL device - the switch is connected to the instrument The device* surface, the device to be tested is entirely optical, and allows testing without any contact of the disk=circuit 5. The second device 1T applies the laser beam 2T to the upper surface of the circuit 5 for the upper surface. The collecting plate 3Τ, on the other hand, the light beam 2 is drawn to the lower surface of the circuit 5, and the opposite surface of the circuit 5; the main plate 3Β. An instrument device 4Τ is connected to the plate 3Τ, and the instrument is connected to the plate 3Β. , 3 Β by the spacer 8 、, 8 Β ^ ^ ^ 5 surface has - The entire device is controlled by the control device. 1 The laser beams 2, 2T, 2B shown in Figures 1a and 2 can also be used to inject electrons into the circuit under test according to the teaching of WO 2006/082294. The electronic injection is illustrated in the figure. 3' which provides a more flat detail of the conductive trace 5b via the circuit under test 5 and connects - the lower contact 塾% to 15 200905225 The potential applied to one of the solder balls 5f is less than the circuit 5 Contact 塾5c = Beam is taken from the outside * 3. The s of this reflection is reduced by the electric potential injected by the charge dQ, which is caused by the injection of electrons onto it. ^In order to accurately apply the laser beam 2, 2, 2, 2, or 5b or a rear 塾 5d = accurate positioning relative to the axial movement of the laser 2.寻贝J Circuit 5 L Page Effect Placement Example 'The connection 塾 is based on the fact that the photoelectricity 2, = touches one of the electrical insulation areas of the circuit under test. On the other hand, if the beam is correctly positioned in the center of a conductive pad, the electron age emitted by the photoelectric effect is gR, and the number of pens is the largest. In other words, the emitted electrons are increased by ί:=ί when covered by a laser beam. So ^ can be bundled at several points above the surface of the circuit, and month b establishes an image of the conductive area on the surface of the circuit. The law is shown as an example of implementing this silk method. Here, the square = f; with respect to the two travel axes of the laser beam 2, the user has two standbys, the way 5' has an origin of 0, and forms a reference OXY: = the circuit under test 5 is exposed to The surface of the beam 2 is t Γχ , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The axes X and X form the angle Θ, the axis Υ and Υ, the same. The range of the wind/wind is exciting, and the circuit to be tested is placed at a known position, and its error pad, Meijin. The pattern (contact soil/etc.) that is set by the circuit is therefore found in the range of hundreds of claw widths. For 16 200905225, why not confuse the choice of style to be set. The domain is full, or set at the edge of the area. Where the italic density is too high for the conductor, and it is not possible to set the circuit 5 to each other to include two reference conductive pad coordinates in this case. The reference pad is, for example, a contact 塾u or the like: the center of the reference 塾-, the Γ is connected to the center, and is used to form the origin of the coordinates 0, χ, γ of the circuit to be tested, and the reference point 塾12 relative to the point, the center position
U =可^立軸χ’’ γ’ ’也就是說’要決定角度θ。該基準 ί之選擇使得它們彼此之間充份遠離,以允許電路5 有最可能正確的位置。 巧個基準塾U、u之中央例如進行在一搜尋區 上中一系列測量來定位,其中該接觸墊假設為由於該 待,電路之拓樸資料而知道的此區域,並考慮到在該 測s式裝置中電路5之定位誤差。 每個測量包含的步驟有施加該雷射光束到電路5 =一個點,,測量由收集器3收集的信號之特性。該 光束在每次測量之間移動,致使到達一最大值之 信號的測量特性之點即可定位出來。依此方式定位 點對應於所要搜尋的點。 a要定位一元件所進行的測量例如係根據覆蓋該 搜尋區域^測量點的矩陣組態來散佈,如圖5所示。 ,矩陣組態係表示成水平線及垂直線的網格型式,其 交,決定該測量點之位置。在所示的範例中’該矩^ 組態包含81個座標測量點(xi,yj),其中i及j為1到9 之間變化的整數。對於直徑50到150/z m之間的雷射 光束’該等測量點沿著X及Y軸彼此相隔1〇到 50 #m,且一導電墊之寬度與雷射光束的直徑為相同大 17 200905225 小等級。在每次發射之後,該雷射光束沿著該雷射光 束行進之X或γ轴之一根據一固定的間距(等於兩個相 鄰水平或垂直線之間的距離)來移動。 當根據圖5之矩陣配置的測量進行與處理時,此 允許^域3卜32、33中該等測量值接近於所要辨識者, 其最高值在靠近所要搜尋的接觸墊5c中心處的 中取得。 ‘、V』1w π夕裡屌囚隹琢測量的信號中U = can be set to the axis χ '' γ' ‘that is, ‘the angle θ is determined. The choice of the reference ί makes them sufficiently far apart from each other to allow the circuit 5 to have the most likely correct position. The center of the reference 塾U, u is for example positioned in a series of measurements on a search area, wherein the contact pad is assumed to be the area known by the topology of the circuit, and is considered in the test The positioning error of the circuit 5 in the s-type device. Each measurement includes the step of applying the laser beam to circuit 5 = a point to measure the characteristics of the signal collected by collector 3. The beam moves between each measurement, so that the point at which the measurement characteristic of the signal reaching a maximum value is located can be located. In this way, the anchor point corresponds to the point to be searched. a The measurement to be performed by positioning a component is, for example, spread according to a matrix configuration covering the search area ^ measurement point, as shown in FIG. The matrix configuration is expressed as a grid pattern of horizontal lines and vertical lines, and its intersection determines the position of the measurement point. In the example shown, the moment configuration contains 81 coordinate measurement points (xi, yj), where i and j are integers varying between 1 and 9. For laser beams between 50 and 150/zm in diameter, the measuring points are separated from each other by 1〇 to 50 #m along the X and Y axes, and the width of a conductive pad is the same as the diameter of the laser beam. 17 200905225 Small grade. After each shot, the laser beam moves along one of the X or gamma axes of the laser beam travel according to a fixed pitch (equal to the distance between two adjacent horizontal or vertical lines). When the measurement is performed according to the matrix configuration of FIG. 5, the measurement values in the allowable domain 32, 33, 33 are close to the desired one, and the highest value is obtained in the vicinity of the center of the contact pad 5c to be searched. . ‘, V』1w π 夕 屌 屌 屌 屌 屌 隹琢 隹琢
訊、測量設備的準度、每次發射之間雷射能 =)’ -導電墊可基於彼此在空間上靠近之發射 均值來定位。其亦可以根據相同的發 ,的測量來進行,以計算出對於該組態中;= 取得的測量之平均值。 τ母们點 曰其必須瞭解到所得到之影像的解析度可由該、、則 ^點的數目及該雷射光點之分佈所的1 P( d)’,、fE代表所考慮的直徑d之圓 ^皮輸人到該測試1置h所 」 使在此區域令^像收集更多的資料,致 ^ ^ f; * ^ 態來重複先前的作業。所以_,2距的矩陣組 粗略間距,例如對於9 1矩陣組癌呈現- 電路中定位第—點(例如點冗大:!、,':: =在該 ) 弟一卓父微細的矩陣 18 200905225 ίΐ磓Γΐ對於5x5個點之間距25"m,即可用於f =地定位第一點。,的位置,並定位其它兩 4f 土 f 课疋雙色凟异法(dlchotomic algorithmς、,甘 以量 式,,十字心:ί 圖案已含藉由在一弟一軸上移該♦ 、一系列的測量。然後該最大測量之可在第 j列的測量’並行經先前辨識之最大測量的位置第 2第一軸上最大測量的位置對應於所要尋找的導體位 其亦可規劃導電塾之輪廓的搜尋,藉由計算相鄰 d 1點之間測量的變化(測量信號之空間變異該 係設置在那些測量點,其中測量變化為最大。网守The accuracy of the signal, measurement equipment, and the laser energy between each shot =)' - The conductive pads can be positioned based on the average of the emissions that are spatially close to each other. It can also be performed based on the same measurements, to calculate the average of the measurements taken for this configuration; The τ mothers must know that the resolution of the obtained image can be 1 P( d)' of the number of points, and the distribution of the laser spot, and fE represents the diameter d considered. The round hole is sent to the test 1 to set the h". In this area, the ^ image is collected, and the ^ ^ f; * ^ state repeats the previous job. So _, 2 distance matrix group rough spacing, for example for 9 1 matrix group cancer rendering - the positioning of the first point in the circuit (such as point redundancy: !,, ':: = in this) brother a Zhuo father fine matrix 18 200905225 ΐ磓ΓΐFor the distance between 5x5 points 25"m, you can use f = to locate the first point. , position, and positioning the other two 4f soil f lesson dlchotomic algorithmς, 甘量量式,十字心: ί pattern already contains the ♦ by a brother, a series of measurements Then the maximum measurement can be in the measurement of column j 'parallel through the previously identified maximum measurement position. The position of the largest measurement on the second first axis corresponds to the conductor position to be sought. It can also plan the contour of the conductive profile. By calculating the change in measurement between adjacent d 1 points (the spatial variation of the measurement signal is set at those measurement points, where the measurement changes to the maximum.
θ 根據一範例,該測試裝置的校準將會進行,特別 疋對於電流鏡之控制的校準,其折射該雷射到待測電 路上的一精確點。為此目的,一校準測試樣式被放置 在該測試裝置中,以取代待測電路。圖6所示為一校 準測試樣式的範例,其中包含具有16 χ 16個通孔之導 電面’其直徑為200"m ’間隔lmm。為了定位該測試 樣式點’其使用位在該測試樣式之中央的一基準〇mθ According to an example, calibration of the test device will be performed, particularly for calibration of the current mirror control, which refracts the laser to a precise point on the circuit under test. For this purpose, a calibration test pattern is placed in the test device to replace the circuit under test. Figure 6 shows an example of a calibration test pattern comprising a conductive surface having 16 χ 16 vias having a diameter of 200 "m' In order to locate the test style point ' it uses a reference 位m in the center of the test pattern
Xm, Ym。所以定位在該測試樣式之左下方的孔A將具 有座標(-7.5,-7.5)。 、 反射5亥雷射光束之電流計由一電磨控制,其可例 如由-10到+ 10V的範圍中變化。該電流計首先會接受 到零電壓。因此該雷射光束被施加於該測試樣式中心 Om附近。然後,位在測試樣式之左下、右下、左上及 右上之孔A、B、C、D的中心可由改變施加於電流計 19 200905225 的ϊ壓ΐ·1〇/] 1GV之間來定位。在孔a、b、c、d 的座標即被記錄。然後,其它孔 些座標,在該測試樣式中孔二= ϊ 由環繞每個孔進行發射雷射 1 Xm 伏特數的座標即儲存在關連於基準 矣炊<以m心座標的一校準表中。藉以編譯的 f二# + 施加於該電流計之電壓來計算,藉以 Ο 、㈣具有基準0m,Xm,Ym中已知座標 、 、A及Y軸之角度θ—起決定。 射及校戶m圖二所示的範例中ϋ、列雷射光束發 ^點0,的伏特數座標即用來計算基 於以mm及伏特數+標j mm計)。然後點〇,之座標用 雷射光束發中"的座標即f由進行 之間的距離:ί異:f間的變異量Δχ,△”點。及0, 表,#方關f轉角度θ。然後使用該校準表編譯一修正 路之表面】;基準0,χ,γ,中建立待測電 計之電壓,致Γΐί間關係,以及要施加於該電流 ^ 吏°亥雷射光束會撞擊到這些點。 電墊擷T:,導每次電子由光電效應自-導 電位會增加。如^右塾大並曰未j4接到一電壓源時,後者的 如果其具有高雷置的電荷自此墊擷取,換言之, 電# ’相對於藉由每次發射所擷取的電 20 200905225 =1塾電位將僅由一發射到下一發射之間增加 夕里二另一方面,如果該雷射光束係在該墊上 心,由母次發射收集的電荷量將會降低,造成由於 =荷之f集產生的信號逐漸下降。當該接觸塾電ί 時々,有效收集的電荷將會過低,以取 在此例中,其需要再次降低有問題 然後該導電墊之電位在一或兩次雷射發 ΓXm, Ym. Therefore, the hole A positioned at the lower left of the test pattern will have a coordinate (-7.5, -7.5). The galvanometer that reflects the 5 Hz laser beam is controlled by an electric grinder, which may vary, for example, from -10 to +10V. The galvanometer will first accept zero voltage. Therefore, the laser beam is applied near the center of the test pattern Om. Then, the centers of the holes A, B, C, and D located at the lower left, lower right, upper left, and upper right of the test pattern can be positioned by changing between ϊ ΐ 1〇/] 1GV applied to the ammeter 19 200905225. The coordinates of the holes a, b, c, and d are recorded. Then, the other holes are coordinates, in the test pattern, the holes 2 = ϊ The coordinates of the 1 Xm volts emitted by the laser around each hole are stored in a calibration table related to the reference 矣炊 < m-coordinate . It is calculated by the voltage applied to the galvanometer by compiling f 2 # +, and 四 and (4) are determined by the angles θ of the known coordinates, A, and Y axes of the reference 0m, Xm, and Ym. In the example shown in Figure 2, the voltmeter coordinates of the ϋ and column laser beams are 0, and the volt coordinates are calculated based on mm and volts + j mm. Then click 〇, the coordinates of the coordinates of the laser beam in the " is the distance between the f: ί :: the variation between f Δχ, △" point and 0, table, #方关f rotation angle θ. Then use the calibration table to compile the surface of a modified path]; the reference 0, χ, γ, establish the voltage of the meter to be measured, the relationship between the Γΐ, and the current to be applied to the current ^ 吏 ° Impact on these points. The electric pad 撷T:, the electrons will increase from the photoelectric effect to the self-conducting position. If the right side is large and the j4 is not connected to a voltage source, the latter if it has a high lightning The charge is drawn from this pad, in other words, the electricity #' relative to the electricity drawn by each shot 20 200905225 = 1 塾 potential will only increase from one transmission to the next transmission, on the other hand, if The laser beam is on the center of the pad, and the amount of charge collected by the mother-slave emission will decrease, causing the signal due to the f-set of the charge to gradually decrease. When the contact is charged, the effectively collected charge will be too low. To take in this case, it needs to lower the problem again and then the electricity of the conductive pad In one or two laser hair Γ
kJ ίίΐ狀況被設置。當該電路包括在該表面上高密产 射ίί撞擊時’其連接至在其它表面: 予接觸j,在母次發射之間連接墊的重新初始化 1=二該低密度塾建立—電氣接觸來達到(圖1a或圖 lb中的測試裝置)。 圖2之無法與待測電路建立電氣接觸(如 電矜來、索*丨Γ丨心I墊之電位的重新初始化亦可由注入 2气利申請案wo 2006/082 294所述 ί力ΛΐΛΐ例示。因此’收集板3即被接地。 if:收集板之導電區域上,致使該;; ^反。貞取,域由電位需要被重新初始化之導體所收 、該收集板電位之重新初始化可由一第二雷射伞 行射如。所示之測試裝置’其第-;束僅進 光束到^成/· β+一光束僅為接地發射。當施加兩個 i電路之個別表面上並由—通過跡線連 跡觸塾時,此解決方案特別適用於具有通過 或等上目標的導體較佳地是由個別大於 飞等於4缉射先束直徑之總和的尺寸之至少一極限值 21 200905225 與電路5之最大偏差當中來選擇。第一光束2τ用於在 導體之接觸塾5e上“電子放射,,組態中,其允許該電荷 之收集目標在於定位該導體靠近於施加該雷射光束的 位置。第二光束2B用於導體之另一接觸墊讣上“ 注入”組態中,其相對於第一光束2T為同時或略有延 遲。光束2Β具有足夠的能量能夠注入電子的數目, ΐίΪΪΪΐί束2Τ所放射之那些電子的數目在該電 = ; = 電=初始化,kJ ίίΐ status is set. When the circuit includes a high-density shot on the surface, it is connected to the other surface: pre-contact j, re-initialization of the connection pad between parent-to-send emissions 1 = two low-density 塾 build-electrical contact to reach (Testing device in Figure 1a or Figure lb). Figure 2 can not establish electrical contact with the circuit under test (such as the re-initialization of the potential of the electric raft, the cable, and the I pad) can also be exemplified by the injection of the gas-filled application WO 2006/082 294. Therefore, the 'collecting plate 3 is grounded. If: the conductive area of the collecting plate, causing the;; ^. Retrieving, the field is received by the conductor whose potential needs to be reinitialized, and the re-initialization of the potential of the collecting plate can be The two lasers are fired as shown in the test device 'the first one; the beam only enters the beam to ^ into / · β + a beam is only grounded. When applied to the individual surfaces of the two i circuits and by - through When the trace is touched, this solution is particularly suitable for a conductor having a pass or equal target, preferably at least one limit value 21 200905225 and a circuit having a size greater than the sum of the beam diameters of the fly equal to four shots. The maximum deviation of 5 is selected. The first beam 2τ is used for "electron emission" on the contact 塾 5e of the conductor. In the configuration, it allows the collection of the charge to locate the conductor close to the position at which the laser beam is applied. Second beam 2B In the "injection" configuration of the other contact pad for the conductor, it is simultaneously or slightly delayed relative to the first beam 2T. The beam 2Β has sufficient energy to inject the number of electrons, and the beams are emitted The number of electrons in the electricity = ; = electricity = initialization,
大‘‘對比”。 电订风出作業,對於電荷收集為最 ml 位的目的,因此一導體將被選擇在電 中尺光寸秦 否電路5有偏差’猎以達到後者的重新初始化。 次雷射光束發射增加該接觸墊電位將保持在致^利用每 位時施加修正係數到該雷射 敎 之定位時的任何偏移,通常為到在该雷射光束 的修正到該雷射光束定位,藉更為複雜 脹/收_象,苴可為^ ^考慮到影響基板的膨 該電路表面上較/的為;ί數目為, 位置制訂修正公式時即將ij些考慮進虽去對於該雷射光束 22 200905225 因為用於定位該雷射光束 同構件係同時用於定位及‘電的相 :法亦允許該測試裝置的自動校電路:明的 時,但亦於一電路制钟靱仅早不僅是在間始 的多種偏移(雷射光風^ 使在光束定位中所有 位置控制的束之電流鏡之 合到相對於該電路之光束^中:性,移)、,其可整 非常高精度的光束撞擊 可達到 精度的測量。 在該測4期間可進行高 能夠在’其料瞭_本發明 路。實;Γ二電去路/兩個導體之位置來定位-電 導電元件來定; 立:J;到Jfif電路表面上-單-度之一大部電^例如仃經該電路之寬度或長 度。 15知上的一導電跡線,以達到良好的位置準 將-板m Vi 11路放射之電子的電極並不需要 Ο 型式=電極\ ^成罪近該電路。其可考慮任何其它 ^㈣極’例如像是—金屬格柵。 或電荷再限於測量由該電極放射的電流 試裝置的型^如里^電極之信號量測的特性係根據測 g接觸到待測電路為;==將。 圍内,導電元件,其亦可能仍在本發明之範 光束發射的元件放射電子’而是由受到雷射 導雷亓杜^ %電極來注入電子到該導體中。該電極與 、電位可調整,使得由該雷射光束自該電極 23 200905225 二電子即‘=二—極, 允許電子由’充份地短,以Large ''contrast'. The electric ordering operation, for the purpose of charge collection is the most ml position, so a conductor will be selected in the electric meter, and the circuit 5 has a deviation to hunt to achieve the latter reinitialization. The laser beam emission increases the potential of the contact pad to remain at any offset when the correction factor is applied to the location of the laser beam, typically to the correction of the laser beam to the laser beam. By borrowing more complicated expansion/receiving _, 苴 can be ^ ^ considering the influence of the substrate on the surface of the circuit is more / / ί number is, the position is formulated when the correction formula is about to take into account Beam 22 200905225 Because the laser beam used to position the laser beam simultaneously with the component is used for positioning and 'electric phase: the method also allows the automatic calibration circuit of the test device: when it is clear, but also in a circuit clock Not only a variety of offsets at the beginning (laser light wind ^ the current mirror of the beam controlled at all positions in the beam positioning is combined with the beam relative to the circuit ^: sex, shift), it can be very high Accurate beam strikes up to To the measurement of the accuracy. During the test 4 can be carried out high in the 'its material _ the invention road. Real; Γ two electric way / two conductor position to locate - electric conductive elements to determine; stand: J; to On the surface of the Jfif circuit - one of the single-degrees, for example, the width or length of the circuit. 15 Knowing a conductive trace to achieve a good position - the electrode of the plate m Vi 11 radiating electrons It is not necessary that Ο type = electrode \ ^ sin close to the circuit. It can be considered any other ^ (four) pole 'such as - metal grid. Or charge is limited to measuring the type of current test device radiated by the electrode ^ ^The characteristic of the signal measurement of the electrode is based on the measurement of the contact with the circuit to be tested; == will be. Within the circumference, the conductive element, which may also be emitted in the element of the beam of the invention, is emitted by the thunder The X-ray electrode is injected to inject electrons into the conductor. The potential of the electrode and the electrode can be adjusted so that the laser beam is from the electrode 23 200905225. The two electrons are '= two poles, allowing electrons to be 'full' Short ground to
基本ί =或剝離該絕緣層。所需要的波長 屬或合ί之此,根據所考慮之金 ;ί;=數量的射出電子。該雷射=響? 射朵击/電路之表面上雜料的剝離臨界值。該雷 Ϊ二:ί二1雷射源所產生,其頻率被乘以因數5 求取侍#於213奈秒之波長。 一 it +但疋,本發明並不限於使用雷射光束。其它可由 件取得電子的光束亦可使用,其皆在本發明 的靶圍内。所以亦可使用非相干光源。Basic ί = or strip the insulation. The required wavelength is or is in accordance with the gold; The laser = ring? The peeling threshold of the miscellaneous material on the surface of the shot/circuit. The Thunder 2: ί 2 1 laser source is generated, the frequency is multiplied by a factor of 5 to obtain the wavelength of servant # 213 nanoseconds. An it + but, the invention is not limited to the use of a laser beam. Other light beams that can take electrons from the device can also be used, all within the target perimeter of the present invention. Therefore, an incoherent light source can also be used.
_因為本發明的方法搜尋所產生之電子通量中電 J數J或在兩個4目鄰點之間此數量的變化為最大的區 或,其僅需要此數量的相對或間接測量。除了 一收集 電極之外的構件可用於取得這些相對測量。 /、 所以,例如由該雷射光束產生的螢光 於所放射之螢光的波長之光偵測器來偵測,並產生g ,所產生的光線強度改變的電流。多種材料在如果暴 露於UV光子輻射時依此方式可由螢光來放出光線。因 此玻璃及陶瓷材料一般皆為高度螢光性。聚合物概略 可由螢光而放射少許光線。另一方面,金屬實際上由 於螢光不會放出光線。螢光的效應在存在有一強烈光 24 200905225 通量時會顯著放大,例如在前述之測試裝置中使用之 雷射光束者。 因此,其亦可能來藉由定位黑暗區域在由電路上 電阻光澤面放射的螢光之背景來定位導電元件在一電 路的表面上。其必須注意到該螢光當可輕易地盥該入 射光束區別,因為後者呈現的波長 光 之光線的波長範圍。 田茧尤欲耵 所以本發明係基於以一光束發射到要被定位之 一撞擊點上所產生的粒子(電子或光子) 取印= 據本志發明的定位方法可具有其它應用,例如讀 或-電極之輪廓的視 【圖式簡單說明】 式參==發=實施範例’以係以非限制性方 試震加一雷射光束到一待測電路的表面之測 Ο 的示=為圖13所示之測試裝置的一部份之變化型式 測試L2的為Λ加圖—雷射光束到待測電路的兩個表面之 圖,Lm注方^有一通過連接之橫截面 方法;觀人電子叙_電財—導體上的 =為,路相對於該測試 圖5為一稽測番知炒 丁丨J叼砠態, 一表面上,·及、、’心、A °又置一導體在待測電路之 25 200905225_ Because the method of the present invention searches for the electron flux generated by the J-number J or the region where the change in the number between the two 4-mesh neighbors is the largest, it only requires this amount of relative or indirect measurement. Components other than a collection electrode can be used to make these relative measurements. /, Therefore, for example, the fluorescent light generated by the laser beam is detected by a photodetector at the wavelength of the emitted fluorescent light, and generates a current whose light intensity changes. A variety of materials can be fluoresced to emit light in this manner if exposed to UV photon radiation. Therefore, glass and ceramic materials are generally highly fluorescent. Polymer Overview A small amount of light can be emitted by fluorescence. On the other hand, the metal actually does not emit light due to the fluorescent light. The effect of fluorescence is significantly magnified in the presence of a strong light 24 200905225 flux, such as those used in the aforementioned test apparatus. Therefore, it is also possible to position the conductive element on the surface of a circuit by locating the dark area on the background of the fluorescent light radiated from the resistive surface of the circuit. It must be noted that the fluorescence can be easily distinguished by the incident beam because the latter exhibits a wavelength range of wavelength light. The invention is based on the extraction of particles (electrons or photons) produced by a beam of light onto one of the impact points to be positioned. The positioning method according to the present invention may have other applications, such as reading or - View of the outline of the electrode [Simplified description of the drawing] Formula ================================================================================== A variation of the test device shown in Fig. 13 is a type of test of L2, which is a diagram of the laser beam to the two surfaces of the circuit to be tested, and the Lm injection method has a cross-section method through the connection; _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Circuit to be tested 25 200905225
圖6為該測試裝置之一校準測試樣式。 【主要元件符號說明】 1 裝置 la 來源 lb 折射構件 2 雷射光束 3 電子收集板 3a 導電區域 4 測量儀器裝置 4a 來源電壓 4b 測量設備 5 電路 5a 絕緣基板 5b 跡線 5c 接觸墊 5d 接觸墊 5f 焊球 6 非等向性導電片 6a 探針 6b 開關 7 網路 7 導電墊 7a 接觸墊 11 導電墊(接觸墊) 26 200905225Figure 6 is a calibration test pattern for one of the test devices. [Main component symbol description] 1 device la source lb refractive member 2 laser beam 3 electron collecting plate 3a conductive region 4 measuring instrument device 4a source voltage 4b measuring device 5 circuit 5a insulating substrate 5b trace 5c contact pad 5d contact pad 5f soldering Ball 6 anisotropic conductive sheet 6a probe 6b switch 7 network 7 conductive pad 7a contact pad 11 conductive pad (contact pad) 26 200905225
12 導電塾(接觸塾) 13 導電墊(接觸墊) 14 導電墊(接觸墊) IT 裝置 IB 裝置 2T 雷射光束 2B 雷射光束 3T 收集板 3B 收集板 4T 儀器裝置 4B 儀器裝置 8T 間隔器 8B 間隔器 31 區域 32 區域 33 區域 A 子L B 子L C 子L D 子L 2712 Conductive 塾 (Contact 塾) 13 Conductive pad (contact pad) 14 Conductive pad (contact pad) IT device IB device 2T Laser beam 2B Laser beam 3T Collector plate 3B Collector plate 4T Instrument device 4B Instrument device 8T Spacer 8B Interval 31 area 32 area 33 area A sub LB sub LC sub LD sub L 27
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FR0703270A FR2916051A1 (en) | 2007-05-07 | 2007-05-07 | METHOD AND DEVICE FOR ALIGNING A TESTING SYSTEM WITH AN ELECTRICAL ELEMENT TO BE TESTED |
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JP (1) | JP2010526314A (en) |
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US4670710A (en) * | 1985-03-29 | 1987-06-02 | International Business Machines Corporation | Noncontact full-line dynamic AC tester for integrated circuits |
US5017863A (en) * | 1989-10-20 | 1991-05-21 | Digital Equipment Corporation | Electro-emissive laser stimulated test |
US4980570A (en) * | 1990-02-23 | 1990-12-25 | Riken Denshi Co., Ltd | Device for determining location of apertures |
DE19703982B4 (en) * | 1997-02-03 | 2004-06-09 | Atg Test Systems Gmbh & Co.Kg | Method for testing printed circuit boards |
KR100423714B1 (en) * | 1998-08-10 | 2004-03-18 | 미쓰비시덴키 가부시키가이샤 | Device for inspecting printed boards |
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