200903020 九、發明說明： 【發明所屬之技術領域】 本發明係爲—種塗層結構及其 種具有可穿透的表面導電層之低 f ’尤其係指- 構（四）及其製作方法（/ 減抗反射塗層結 【先前技術】 習知的抗反射光學塗層的多層季 通則爲贫W + m β 禮錢自彻一通則， 、、j爲及光子塗層的表層的物質具200903020 IX. Description of the invention: [Technical field of the invention] The present invention relates to a coating structure and a low f' having a penetrable surface conductive layer, especially a structure (four) and a manufacturing method thereof ( / Anti-reflective coating knot [Prior Art] The multi-layer quaternary pass of the conventional anti-reflective optical coating is a W + m β 钱 自 自 , , , , , , , , , , , , , , , , , ,
Si〇2，折射率禹1 μ ·+、u π 、有低折射率，例 2卿丰為！.46，或MgF2,折射率 將该抗反射塗層運用于顯示器 例二’ 時=ίίΓ液晶顯示器或電漿顯示器之低反射心 夺在大里生産的過程中，存在一些瓶頭，盆原 構的導電層係由一絕緣層(例如S_gF:Si〇2, refractive index 禹1 μ ·+, u π, with low refractive index, Example 2 Qingfeng is! .46, or MgF2, the refractive index of the anti-reflective coating applied to the display case 2' = ίίΓ low-reflection of liquid crystal display or plasma display. In the process of production in Dali, there are some bottle heads, pots The conductive layer is composed of an insulating layer (for example, S_gF:
的第-H 計規則爲’佈置於—基板表面 ^一層爲具崎射率之物質所構成（標示爲H)，其後接 者一具低折射率之物質所構成（標示爲L)的第二層，因 此’習知的抗反射塗層的多層結構之規則爲hlhl或 HLHLHL，以高折射率（H)之物質爲IT〇而低折射率⑴ 之物質爲S1〇2爲例子，該四層結構分別爲The first-H rule is 'disposed on the surface of the substrate. ^ One layer is composed of a material with a high rate of haze (labeled as H), followed by a material with a low refractive index (marked as L). The second layer, therefore, the rule of the multilayer structure of the conventional anti-reflective coating is hlhl or HLHLHL, and the substance having a high refractive index (H) is IT〇 and the substance having a low refractive index (1) is S1〇2 as an example. The layer structure is
GlaSS/ITO/Sl〇2/ITO/Sl〇2。目爲IT〇是一透明的導電物質， 該多層結構的塗層的導電性低於每平方丨⑽歐姆⑼，而 且當該導電塗層連結至地時，可用於電磁干擾（ΕΜΙ)頻障 5 200903020 或靜電放電。然而，問題是_知的 物質爲Si〇2，且其厚度爲麵 =^構的表面 性爲高密度、且有' 该S〗02的物質特 之抗反射塗層於絕=運用傳統 ⑽2層所隔離之該燒製的IT〇層^難„由外部之 觸該ΙΤ〇層的接地 ’在使-金屬接 打破請2層，以確保錫球 一製㈣大量生産抗反射塗層的航頸/良好接觸’此 該超:二= :: = : = - 線上産生非持久性的趣觸：皮= 爲赶曰波谇接製程揲法保證能夠均勻的 該絕緣層而得到一均句的接觸阻抗。糾的冰度打破 塗層:;::=r知的抗電磁干擾和抗反射 【發明内容】 本發明之主要目的是提供一種具有可穿透的表面導電 層之低電阻光哀減抗反射塗層結構（l〇w resistivity light attenuation anti-reflection coating structure)(四），該低電阻 光衰減抗反射塗層可運用於半導體、光學頭、液晶顯示器、 陰極射線管、建築玻璃、觸控式感測器、螢幕濾波器、塑 膠網板塗層等工業。 本發明之另一目的是提供一種具有可穿透的表面導電 200903020 層之低電阻光衰減抗反射塗層結構（low resistivity light attenuation anti-reflection coating structure)(四），該低電阻 光衰減抗反射塗層之表層的物質爲一可穿透的表面導電 層，而該可穿透的表面導電層的光反射率低於0.5%，該低 電阻光衰減抗反射塗層的阻抗介於每平方0.5Ω與0.7Ω之 間，而其穿透率爲55%至70%。 本發明之另一目的是提供一種具有可穿透的表面導電 層之低電阻光哀減抗反射塗層結構（low resistivity light atteiuiation anti-reflection coating structure)(四），本發明之 塗層結構其具有高導電性之特性，當其運用於電漿顯示器 之製造時，其具有電磁干擾屏障、光學視角低反射、高表 面硬度抗刮性 '適度的光衰減效應等優點。例如，本發明 之塗層結構之表面阻抗介於每平方〇·5Ω與〇.7Ω之間，以 及具有足夠硬度去通過軍事標準MIL_C_48497之耐刮測 試。 本發明之另一目的是提供一種具有可穿透的表面導電 層之低電阻光衰減抗反射塗層結構（1〇w代㈣加办Ught attenuation anti_refiection c〇ating structure)(四），於完成塗 層模組之製作後，首先，設置—遮板（shmter)於該塗層模 組之上表面，其中該遮板的尺寸係小於該塗層模組，以使 得該塗層模組的上表面之邊緣曝露出來；錢，塗佈一層 導電層（conduct購layer)於該塗層㈣且的上表面之邊緣， 以供接地（gIOUnd) ’而達到良好的電性接觸。其中，該導 電層係可為銀聚（silver paste )。 200903020 為了達成上述目的，本發明係提供一種具有可穿透的 表面導電層之低電阻光衰減抗反射塗層結構（low resistivity light attenuation anti-reflection coating structure)(四），其 包括有：一基板（substrate )及一塗層模組（coating module)。其中，該塗層模組係形成於該基板之一前表面 上，並且該塗層模組係由複數層含鈦氧化物（Ti-based oxide )與碳（carbon )的混合物塗層（mixture coating layer ) 與複數層金屬塗層（metal coating layer)交替相疊而組成。 為了達成上述目的，本發明係提供一種具有可穿透的 表面導電層之低電阻光衰減抗反射塗層結構（low resistivity light attenuation anti-reflection coating structure)之製作方 法（四）’其步驟包括有：首先，提供一基板（substi*ate); 然後’形成一塗層模組（coating module)於該基板之一前 表面上，其中該塗層模組係由複數層含鈦氧化物（Ti_based oxide)與碳（carbon)的混合物塗層（mixture coating layer ；) 與複數層金屬塗層（metal coating layer)交替相疊而組成。 在一實施例中’該具有可穿透的表面導電層之低電阻 光衰減抗反射塗層結構（l〇w resistivity light attenuation anti-reflection coating structure)(四）包括有 9 層，第一涂 層、第二塗層、第三塗層、第四塗層、第五塗層、第六塗 層、第七塗層、第八塗層和第九塗層依序排列在基板上， 每一層將以物理厚度或光學厚度來描述，光學厚度係爲層 厚度與折射率之數學乘積，而爲設計波長的分數，在本發 明中’該設計波長爲520nm。 200903020 第一塗層或稱爲表面層係為可穿透的含鈦氧化物 (TVbased oxide)與碳（carbon)的混合物塗層（mixture coatmg layer)，該含鈦氧化物係為二氧化鈦（Ti〇2)，該混 合物僅吸收些微的可見光，當波長爲52〇nm時，該表面層 之折射率係為2.45之間，而物理厚度爲3〇nm。 ，第二塗層係為一金屬塗層（metalc〇atinglayer)，該金 ^塗層為銀（Ag)’其僅吸收些微的可見光，當波長爲52〇腿 k Ϊ折射率介於0,1至〇.5之間，而物理厚度爲15nm。 &第二塗層係為可穿透的含鈦氧化物⑺如⑽狀㈤ = '(carbon)的混合物塗層（mixture咖㈣1啊），該 ^鈦氧化物係為—氧化鈦（加2)，該混合物僅吸收些微的 =光’當波長A 520nm日夺，絲面層之折射率係為Μ 之間，而物理厚度爲66nm。 \ 屬法=塗層係為一金屬塗層（腦如C〇atin§ 一.），該金 日士 =為銀（Ag)，其僅吸收些微的可見光，當波長爲52〇腿 τ，、折射率介於αΐ至0.5之間，而物理厚度爲15臟。 與石^五f層係為可穿透的含欽氧化物（Abased oxlde) 的混合物塗層（mi血e CGating layer),該 可見$ ’ J為—氧化鈦（Ti〇2) ’該混合物僅吸收些微的 之fl a:;長爲52〇nm時，該表面層之折射率係為2.45 之間’而物理厚度爲6〇nm。 屬塗層Λ為—金屬塗層（metaU⑽1ng ―)，該金 時，’其僅吸收些微的可見光，當波長爲52〇nm " '、於0·1至0.5之間’而物理厚度爲15nm。 200903020 第七塗層係為可穿透的含鈦氧化物（Ti-based oxide) 與石反（carbon)的混合物塗層（mixture coating layer)，該 含欽氧化物係為二氧化鈦（Ti02)，該混合物僅吸收些微的 可見光’當波長爲520nm時’該表面層之折射率係為2.45 之間’而物理厚度爲70nm。 第八塗層係為一金屬塗層（metal coating layer)，該金 屬塗層為銀（Ag)’其僅吸收些微的可見光，當波長爲52〇nm 日π，其折射率介於0.1至0.5之間，而物理厚度爲15nm。 第九塗層係為可穿透的含鈦氧化物（Ti_based 〇xide) 矣石反（carbon)的混合物塗層（mixture c〇ating iayer)，該 含鈦氧化物係為二氧化鈦（Ti〇2)，該混合物僅吸收些微的 可見光，當波長爲52〇nm時，該表面層之折射率係為2 45 之間’而物理厚度爲4〇mn。 因爲本發明之塗層結構的表層有良好的導電特性，該 具有可穿透的表面導電層之低電阻光衰減抗反射塗層結構 (low resistivity light attenuation anti-reflection coating structure ) a ^ ^ g ^ # 産的良率和可#度’其可運用於液晶顯示器或電聚顯示器 之玻璃基板或塑膠基板上。GlaSS/ITO/Sl〇2/ITO/Sl〇2. The target is a transparent conductive material. The coating of the multilayer structure has a conductivity lower than (10) ohms per square inch (9), and can be used for electromagnetic interference (ΕΜΙ) frequency barrier when the conductive coating is bonded to the ground. 200903020 or electrostatic discharge. However, the problem is that the known substance is Si〇2, and the thickness of the surface is a high density, and the material having the 'S> 02 is specially anti-reflective coating. The isolated IT 〇 layer is difficult to be „ „ „ „ „ „ „ „ „ „ „ 金属 外部 外部 使 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属/Good contact's this super: two = :: = : = - The line produces a non-persistent interest: skin = in order to ensure that the insulation layer can be uniform and get a uniform sentence contact Impedance. Corrected ice breaking coating::::==anti-electromagnetic interference and anti-reflection. SUMMARY OF THE INVENTION The main object of the present invention is to provide a low-resistance light-reducing anti-reflection with a transparent surface conductive layer. 〇w resistivity light attenuation anti-reflection coating structure (4), the low-resistance light-attenuation anti-reflective coating can be applied to semiconductors, optical heads, liquid crystal displays, cathode ray tubes, architectural glass, touch Sensor, screen filter, plastic screen coating, etc. Another object of the present invention is to provide a low resistivity light attenuation anti-reflection coating structure (4) having a transparent surface conduction 200903020 layer, which is low-resistance light attenuation. The surface layer of the anti-reflective coating is a penetrable surface conductive layer, and the light transmissive surface conductive layer has a light reflectance of less than 0.5%, and the low-resistance light-attenuating anti-reflective coating has an impedance of between Between 0.5 Ω and 0.7 Ω, and a transmittance of 55% to 70%. Another object of the present invention is to provide a low-resistance light mitigation anti-reflective coating structure having a permeable surface conductive layer ( Low resistivity light atteiuiation anti-reflection coating structure (4), the coating structure of the present invention has high conductivity characteristics, and when it is applied to the manufacture of a plasma display, it has an electromagnetic interference barrier, low optical reflection angle, High surface hardness scratch resistance 'appropriate light attenuation effect, etc. For example, the surface resistance of the coating structure of the present invention is between every square 〇·5 Ω and 〇.7 Ω, and It has sufficient hardness to pass the scratch test of the military standard MIL_C_48497. Another object of the present invention is to provide a low-resistance light-attenuation anti-reflective coating structure having a penetrable surface conductive layer (1〇w generation (4) plus Ught attenuation Anti-refiection c〇ating structure) (4), after the completion of the fabrication of the coating module, firstly, a shutter is disposed on the upper surface of the coating module, wherein the size of the shutter is smaller than the coating The module is such that the edge of the upper surface of the coating module is exposed; money is coated with a conductive layer (conduct to buy a layer) on the edge of the upper surface of the coating (4) for grounding (gIOUnd) Achieve good electrical contact. Wherein, the conductive layer can be a silver paste. 200903020 In order to achieve the above object, the present invention provides a low resistivity light attenuation anti-reflection coating structure (four) having a transparent surface conductive layer, which includes: a substrate (substrate) and a coating module. Wherein, the coating module is formed on a front surface of the substrate, and the coating module is composed of a plurality of layers of titanium-containing oxide (Ti-based oxide) and carbon (mixture coating) Layer ) is formed by alternately overlapping a plurality of metal coating layers. In order to achieve the above object, the present invention provides a method for fabricating a low resistivity light attenuation anti-reflection coating structure (four) having a transparent surface conductive layer. First, a substrate is provided; then a coating module is formed on a front surface of the substrate, wherein the coating module is composed of a plurality of layers of titanium oxide (Ti_based oxide) And a mixture of carbon (mixture coating layer) and a plurality of metal coating layers are alternately stacked. In one embodiment, the low resistive light attenuating anti-reflection coating structure (IV) having a transparent surface conductive layer comprises four layers, a first coating The second coating layer, the third coating layer, the fourth coating layer, the fifth coating layer, the sixth coating layer, the seventh coating layer, the eighth coating layer and the ninth coating layer are sequentially arranged on the substrate, and each layer will be Described as physical thickness or optical thickness, the optical thickness is the mathematical product of the layer thickness and the refractive index, and is the fraction of the design wavelength, which is 520 nm in the present invention. 200903020 The first coating or surface layer is a permeable silicon-based oxide (TV-based oxide) and carbon (mixture coatmg layer), the titanium-containing oxide is titanium dioxide (Ti〇 2) The mixture absorbs only a small amount of visible light. When the wavelength is 52 〇 nm, the surface layer has a refractive index of 2.45 and a physical thickness of 3 〇 nm. The second coating is a metal coating layer (metal), which is silver (Ag) which absorbs only a small amount of visible light. When the wavelength is 52, the k Ϊ refractive index is between 0, 1 Between .5 and a physical thickness of 15 nm. & The second coating is a penetrable titanium-containing oxide (7) such as (10) (5) = '(carbon) mixture coating (mixture coffee (four) 1 ah), the titanium oxide system is - titanium oxide (plus 2 The mixture only absorbs a slight amount of light = when the wavelength A is 520 nm, the refractive index of the silk layer is between Μ, and the physical thickness is 66 nm. \属法=The coating system is a metal coating (brain such as C〇atin§ I.), the gold Japanese = silver (Ag), which absorbs only a small amount of visible light, when the wavelength is 52 〇 leg τ, The refractive index is between αΐ and 0.5, and the physical thickness is 15 dirty. And the stone layer is a permeable layer of Abased oxlde-containing mixture (mi-e CGating layer), which can be seen as $'J--titanium oxide (Ti〇2)' Absorbing a slight amount of fl a:; when the length is 52 〇 nm, the refractive index of the surface layer is between 2.45' and the physical thickness is 6 〇 nm. The coating is —-metal coating (metaU(10)1ng ―), when it is gold, it only absorbs a little visible light when the wavelength is 52〇nm " ', between 0·1 and 0.5' and the physical thickness is 15nm . 200903020 The seventh coating layer is a permeable titanium-containing oxide (Ti-based oxide) and a stone carbon (mixture coating layer), the containing oxide system is titanium dioxide (Ti02), The mixture only absorbs a slight amount of visible light 'when the wavelength is 520 nm', the refractive index of the surface layer is between 2.45' and the physical thickness is 70 nm. The eighth coating is a metal coating layer, which is silver (Ag), which absorbs only a small amount of visible light, and has a refractive index of 0.1 to 0.5 when the wavelength is 52 〇 nm. Between, and the physical thickness is 15nm. The ninth coating is a permeable titanium-containing oxide (Ti_based 〇xide) ruthenium carbon (mixture c〇ating iayer), the titanium-containing oxide is titanium dioxide (Ti〇2) The mixture absorbs only a small amount of visible light. When the wavelength is 52 〇 nm, the refractive index of the surface layer is between 2 and 45' and the physical thickness is 4 〇 mn. Since the surface layer of the coating structure of the present invention has good electrical conductivity, the low resistivity light attenuation anti-reflection coating structure a ^ ^ g ^ #产的率率和可#度' It can be applied to glass substrates or plastic substrates of liquid crystal displays or electro-polymerized displays.
—為了能更進-步瞭解本發明為達成贼目的所採取之技 術气&及功效，_閱以下有關本發明細 信本發明之目的、特徵與特點，當可由此得-私且具U 所附圖式僅提供參考與說_J 10 200903020 【實施方式】 请蒼考弟一圖所示，其係為本發明具有可穿透的表面 導電層之低電阻光衰減抗反射塗層結構（low resistivity light attenuation anti-reflection coating structure)(四）之結 構示意圖。由圖中可知，本發明所揭露之低電阻光衰減抗 反射塗層結構（low resistivity light attenuation anti-reflection coating structure)(四）係包括有：一基板（substrate) S 及一塗層模組（coating module) M。 其中’該基板S係可為一塑膠薄膜（plastic film)或一 玻璃（glass)。而該塗層模組Μ係可為電漿顯示器（plasma display )或液晶顯示器（liquid crystal display )之基本塗層。 再者’該塗層模組Μ係包括：一第一塗層（first coating layer) 1，其形成於該基板S之一前表面上；一第二塗層 (secondcoatinglayer) 2，其形成於該第一塗層1上；一 第三塗層（thirdcoatinglayer) 3，其形成於該第二塗層2 上；一第四塗層（fourth coating layer) 4，其形成於該第 三塗層3上；一第五塗層（fifth coating丨ayer) 5，其形成 於该弟四塗層4上，一弟六塗層（sixth coating layer ) 6， 其形成於该弟五塗層5上；一第七塗層（seventh coating layer) 7，其形成於該第六塗層6上；一第八塗層（eighth coating layer) 8 ’其形成於該第七塗層7上；以及一第九 塗層（ninth coating layer) 9，其形成於該第八塗層8上。 此外’該第一塗層1、該第三塗層3、該第五塗層5、 該第七塗層7、及該第九塗層9皆為含鈦氧化物（Ti-based 11 200903020 oxide )與石厌（carbon )的現合物塗層（mixture c〇aung iayer)， 並且該第二塗層2、該第四塗層4、該第六塗層6、及該 第八塗層8皆為金屬塗層（metai coating iayer)。其中，該 含欽氧化物係為二氧化鈦（Ti〇2)，並且該等金屬塗層係為 銀（Ag)。該等混合物塗層的折射率（refracdve index)係 高於該等金屬塗層。 因此’該塗層模組Μ係形成於該基板S之一前表面 上’並且該塗層模組]y[係由複數層含鈦氧化物（Ti_based oxide )與石反（carbon )的混合物塗層（mixture coating iayer ) 與複數層金屬塗層（metai c〇ating iayer)交替相疊而組成。 再者’該第一塗層、該第三塗層、該第五塗層、該第 七^：層、及该弟九塗層的折射率（refractive index )皆為 2.45 ’並且該第二塗層、該第四塗層、該第六塗層、及該第 八塗層的折射率（refractive index)皆介於0.1〜0.5之間。 另外，該第一塗層的厚度係為3〇nm;該第二塗層的厚度係 介於15nm ;該第三塗層的厚度係為66nm ;該第四塗層的 厚度係介於15nm ;該第五塗層的厚度係為60nm ;該第六 塗層的厚度係介於15nm;該第七塗層的厚度係為70nm; 該第八塗層的厚度係介於15nm;以及該第九塗層的厚度係 為 40nm。 此外，該第一塗層1、該第三塗層3、該第五塗層5、 該第七塗層7、及該第九塗層9之混合物塗層皆由直流或 脈衝直流〉賤鍍法（DC or AC magnetron sputtering method) 所形成’並且該第二塗層2、該第四塗層4、該第六塗層 12 200903020 6、及該第八塗層8之金屬塗層皆由直流或脈衝直流錢鑛 法（DC or AC magnetron sputtering method )所形成。並且， 該第一塗層1至該第九塗層9係由同轴或滾子對滾子真空 糸統之療·鑛或藏鍵製程C in-line or roll-to-roll vacuum evaporation/sputtering method)所开j 成。 請參閱第二圖所示，其係為本發明具有可穿透的表面 導電層之低電阻光哀減抗反射塗層結構（low resistivity light attenuation anti-reflection coating structure)(四）之上 視示意圖。由圖中可知，本發明之低電阻光衰減抗反射塗 層結構更進一步包括··一設置於該基板S下表面之遮板 (shutter) B，其中該遮板B的尺寸小於該基板S，以使得 該基板S下表面之邊緣曝露出來，並且該基板S下表面之 邊緣係塗佈一層導電層（conductive layer ) C以供接地 (ground)’而達到良好的電性接觸。最後，移除該遮板B。 其中，該導電層C係為銀漿（silver paste )。 請參閱第三圖所示，其係為本發明具有可穿透的表面 導電層之低電阻光衰減抗反射塗層結構（low resistivity light attenuation anti-reflection coating structure)之製作方法 (四）之流程圖。由流程圖可知，本發明之低電阻光衰減 抗反射塗層結構（low resistivity light attenuation anti-reflection coating structure)之製作方法，其步驟包括 有： S400 :提供一基板（substrate) S ; S402 :形成一第一塗層（first coating layer) 1 於該基 13 200903020 板s之該前表面上，其中該第一塗層1係為含 鈦氧化物（Ti-based oxide)與碳（carbon)的混 合物塗層（mixture coating layer); S404:形成一第二塗層（second coating layer) 2 於該 第一塗層1上，其中該第二塗層2係為金屬塗 層(metal coating layer)； S406:形成一第三塗層（third coating layer) 3於該第 二塗層2上，其中該第三塗層3係為含鈦氧化 物（Ti-based oxide )與碳（carbon)的混合物塗 層(mixture coating layer)； S408 ··形成一第四塗層（fourth coating layer) 4 於該 第三塗層3上，其中該第四塗層4係為金屬塗 層(metal coating layer)； S410··形成一第五塗層（fifth coating layer) 5於該第 四塗層4上，其中該第五塗層5係為含鈦氧化 物（Ti-based oxide)與碳（carbon)的混合物塗 層（mixture coating layer ); S412:形成一第六塗層（sixth coating layer) 6於該第 五塗層5上，其中該第六塗層6係為金屬塗層 (metal coating layer)； S414 :形成一第七塗層（seventh coating layer) 7 於該 第六塗層6上，其中該第七塗層7係為含鈦氧 化物（Ti-based oxide)與碳（carbon)的混合物 塗層（mixture coating layer); 14 200903020 S41 ό .形成一第八塗層（eighth coating layer ) 8 於該 第七塗層7上，其中該第八塗層8係為金屬塗 層（metal coating layer);以及 S418.形成一苐九塗層（ninth c〇ating layer) 9於該第 八塗層8上’其中該第九塗層9係為含鈦氧化 物（Τι-based oxide)與碳（carbon)的混合物塗 層（mixture coating layer) 〇 綜上所述，該低電阻光衰減抗反射塗層可運用於半導 體、光學頭、液晶顯示器、陰極射線管、建築玻璃、觸控 式感測器、螢幕濾波器、塑膠網板塗層等工業。 此外，該低電阻光衰減抗反射塗層之表層的物質爲一 可牙透的表面導電層，而該可穿透的表面導電層的光反射 率低於0.D%，該低電阻光衰減抗反射塗層的阻抗介於每平 方0.5Ω與0.7Ω之間，而其穿透率爲55%至7〇%。 再者，本發明之塗層結構其具有高導電性之特性，當 其運用於電漿顯示器之製造時，其具有電磁干擾屏障、光 學視角低反射、高表面硬度抗雜、適度的絲減效應等 優點。例如，本發明之塗層結構之表面阻抗介於每平方〇 5Ω 與0.7Ω之間，以及具有足夠硬度去通過軍事標準 MIL-C-48497之耐刮測試。 因爲本無明之塗層結構的表層有良好的導電特性，該 具有可穿透的表面導電層之低電阻光衰減抗反射塗層結構 (low resist^ny light attenuation ant^reflect^n coating structure)可以降低接地製程所需的卫作負荷和增加大量生 15 200903020 産的良率和可靠度’其可運 之玻璃基板或塑膠基板上。 或電漿顯示器 惟，以上所述，僅為本發 詳細說明與圖式，惟本發明之二的具體實施例之 以限制本發明，本發明之戶: 圍為準，凡合於本發明巾 ^ ^之ΐ請專利範 ^ ^ 專利乾圍之精神與复魅似# <卜 之貫施例，皆應包含於本發、類似植 之乾碎中，任何熟悉該項技 可輕易思及之變化或修飾皆可涵 盍在以下本案之專利範圍。 ^ 0 【圖式簡單說明】 苐一圖係爲本發明具有可穿透的表面導電層之低電阻光衰 減抗反射塗層結構（l〇w resistivity lighi attenuati〇n anti-reflection coating structure)(四）之結構示意圖； 第一圖係為本發明具有可穿透的表面導電層之低電阻光衰 減抗反射塗層結構（low resistivity light attenuation anti-reflection coating structure)(四）之上視示意圖； 以及 第三圖係爲本發明具有可穿透的表面導電層之低電阻光衰 減抗反射塗層結構（low resistivity light attenuation anti-reflection coating structure)之製作方法（四） 之流程圖。 【主要元件符號說明】 16 200903020 基板 塗層模組 第一塗層 第二塗層 第三塗層 第四塗層 第五塗層 第六塗層 第七塗層 第八塗層 第九塗層 遮板 導電層- In order to be able to further understand the technical gas & and efficacy of the present invention in order to achieve the thief's purpose, the following objects, features and characteristics of the present invention relating to the present invention can be obtained from The drawing is only for reference and said _J 10 200903020 [Embodiment] Please show a picture of a low-resistance light-attenuating anti-reflective coating with a transparent surface conductive layer of the present invention. Low resistivity light attenuation anti-reflection coating structure) (four) structure diagram. As shown in the figure, the low resistivity light attenuation anti-reflection coating structure (4) of the present invention includes: a substrate S and a coating module ( Coating module) M. Wherein the substrate S can be a plastic film or a glass. The coating module can be a basic coating of a plasma display or a liquid crystal display. Furthermore, the coating module comprises: a first coating layer 1 formed on a front surface of the substrate S; a second coating layer 2 formed on the first coating layer 2 a first coating layer 3; a third coating layer 3 formed on the second coating layer 2; a fourth coating layer 4 formed on the third coating layer 3 a fifth coating (fifth coating丨ayer) 5, which is formed on the fourth coating 4, a sixth coating layer 6, which is formed on the fifth coating 5; a seventh coating layer 7 formed on the sixth coating layer 6; an eighth coating layer 8' formed on the seventh coating layer 7; and a ninth coating layer (ninth coating layer) 9, which is formed on the eighth coating layer 8. In addition, the first coating layer 1, the third coating layer 3, the fifth coating layer 5, the seventh coating layer 7, and the ninth coating layer 9 are all titanium-containing oxides (Ti-based 11 200903020 oxide And a carbon coating of a carbon dioxide, and the second coating 2, the fourth coating 4, the sixth coating 6, and the eighth coating 8 All are metal coatings (metai coating iayer). Wherein, the salt-containing oxide is titanium dioxide (Ti〇2), and the metal coating is silver (Ag). The refractive index (refracdve index) of the coatings of the mixtures is higher than the metal coatings. Therefore, the coating module is formed on one of the front surfaces of the substrate S and the coating module is y [coated by a mixture of a plurality of layers of titanium oxide (Ti_based oxide) and stone (carbon). A layer (mixture coating iayer) is formed by alternately overlapping a plurality of metal coatings (metai c〇ating iayer). Further, the refractive index of the first coating layer, the third coating layer, the fifth coating layer, the seventh layer, and the second coating layer are both 2.45′ and the second coating layer The refractive index of the layer, the fourth coating layer, the sixth coating layer, and the eighth coating layer are all between 0.1 and 0.5. In addition, the thickness of the first coating layer is 3 〇 nm; the thickness of the second coating layer is 15 nm; the thickness of the third coating layer is 66 nm; the thickness of the fourth coating layer is 15 nm; The thickness of the fifth coating layer is 60 nm; the thickness of the sixth coating layer is 15 nm; the thickness of the seventh coating layer is 70 nm; the thickness of the eighth coating layer is 15 nm; and the ninth The thickness of the coating was 40 nm. In addition, the first coating layer 1, the third coating layer 3, the fifth coating layer 5, the seventh coating layer 7, and the ninth coating layer 9 are all coated by DC or pulsed DC. The method of forming a DC or AC magnetron sputtering method and the metal coating of the second coating layer 2, the fourth coating layer 4, the sixth coating layer 12 200903020 6 and the eighth coating layer 8 are all DC Or formed by the DC or AC magnetron sputtering method. And, the first coating layer 1 to the ninth coating layer 9 are treated by a coaxial or roller-to-roller vacuum system, a mineral or a trapping process, C in-line or roll-to-roll vacuum evaporation/sputtering Method) is opened. Referring to the second figure, it is a top view of a low resistivity light attenuation anti-reflection coating structure (4) having a transparent surface conductive layer of the present invention. . As shown in the figure, the low-resistance light-attenuation anti-reflective coating structure of the present invention further includes a shutter B disposed on a lower surface of the substrate S, wherein the shutter B has a smaller size than the substrate S, The edge of the lower surface of the substrate S is exposed, and the edge of the lower surface of the substrate S is coated with a conductive layer C for grounding to achieve good electrical contact. Finally, the shutter B is removed. The conductive layer C is a silver paste. Please refer to the third figure, which is a process for fabricating a low resistivity light attenuation anti-reflection coating structure (4) having a transparent surface conductive layer of the present invention. Figure. The method for fabricating the low resistivity light attenuation anti-reflection coating structure of the present invention includes the following steps: S400: providing a substrate S; S402: forming a first coating layer 1 on the front surface of the substrate 13 200903020, wherein the first coating 1 is a mixture of Ti-based oxide and carbon a coating layer; S404: forming a second coating layer 2 on the first coating layer 1, wherein the second coating layer 2 is a metal coating layer; S406 Forming a third coating layer 3 on the second coating layer 2, wherein the third coating layer 3 is a coating of a mixture of Ti-based oxide and carbon (minture coating layer); S408 · forming a fourth coating layer 4 on the third coating layer 3, wherein the fourth coating layer 4 is a metal coating layer; S410· · Form a fifth coating layer 5 On the fourth coating layer 4, wherein the fifth coating layer 5 is a mixture coating layer containing Ti-based oxide and carbon; S412: forming a sixth coating layer (sixth coating layer) 6 on the fifth coating layer 5, wherein the sixth coating layer 6 is a metal coating layer; S414: forming a seventh coating layer 7 On the sixth coating layer 6, wherein the seventh coating layer 7 is a mixture coating layer containing Ti-based oxide and carbon; 14 200903020 S41 ό forming an eighth coating An eighth coating layer 8 on the seventh coating layer 7, wherein the eighth coating layer 8 is a metal coating layer; and S418. forming a ninth c〇ating layer 9 on the eighth coating layer 8 wherein the ninth coating layer 9 is a mixture coating layer of a titanium-containing oxide and a carbon, which is described above. Low-resistance light-attenuation anti-reflective coating can be applied to semiconductors, optical heads, liquid crystal displays, cathode ray tubes, Building glass, touch sensor, a filter screen, plastic screen and other industrial coatings. In addition, the material of the surface layer of the low-resistance light-attenuating anti-reflective coating is a permeable surface conductive layer, and the light-reflecting rate of the permeable surface conductive layer is less than 0.1%, and the low-resistance light attenuation The anti-reflective coating has an impedance between 0.5 Ω and 0.7 Ω per square and a penetration of 55% to 7〇%. Furthermore, the coating structure of the present invention has high conductivity characteristics, and when it is applied to the manufacture of a plasma display, it has an electromagnetic interference barrier, low optical reflection angle, high surface hardness, and moderate silk reduction effect. Etc. For example, the coating structure of the present invention has a surface impedance between 5 ohms and 0.7 ohms per square inch and has sufficient hardness to pass the scratch resistance test of the military standard MIL-C-48497. Since the surface layer of the opaque coating structure has good electrical conductivity, the low resist^ny light attenuation ant^reflect^n coating structure can have a transparent surface conductive layer. Reduce the maintenance load required for the grounding process and increase the yield and reliability of the large-scale production of 200903020's on glass substrates or plastic substrates. Or the plasma display, except for the above description, which is only the detailed description and the drawings of the present invention, but the specific embodiment of the second embodiment of the present invention is intended to limit the present invention, and the present invention is: ^ ^ ΐ 专利 专利 专利 专利 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ Changes or modifications may be covered by the patents in this case below. ^ 0 [Simple diagram of the diagram] The first diagram is a low-resistance light-attenuation anti-reflection coating structure with a transparent surface conductive layer of the invention (4〇w resistivity lighi attenuati〇n anti-reflection coating structure) Schematic diagram of the structure; the first figure is a top view of the low resistivity light attenuation anti-reflection coating structure (4) having a transparent surface conductive layer; The third figure is a flow chart of the method (4) for fabricating a low resistivity light attenuation anti-reflection coating structure having a permeable surface conductive layer. [Main component symbol description] 16 200903020 Substrate coating module First coating Second coating Third coating Fourth coating Fifth coating Sixth coating Seventh coating Eightth coating Ninth coating Plate conductive layer