200900483 九、發明說明： 【發明所屬之技術領域】 本發明涉及用於電路基柘 ^ ^ η ^ ^ ^ , 扳之間或者1C晶片等電子 零件同佈線基板之料接的電料_黏結劑。 【先前技術】 S電路基板之間或者IC a η楚+ ^ ,c ^ ΒΗ . 布儿日曰片等電子零件和電路基 板之間進行電路連接時 使用將黏結劑或者導電粒子 刀數的各向異性的導電漆社 料费口劑即’可以將這些黏結 二、覆於相對設立的兩電極之間，經加熱、加麼使電 實St接後，再通過在加壓方向使其具有導電性而 實現電連接。例如，在日太牲 任曰本特啐公開公報平3-16147 號中’提出使用環氧樹脂作致主i ^ # & % 孔树舳作爲主要成分的電路連接用 黏結劑的方案。 然而，以環氧樹脂作爲主要成分的黏結 衝擊試驗和PCT等試料的可隸試财，基於連接 基板的熱膨脹率的不同所產生的内部應力，容易在連 接處產生連接阻抗的增大以及黏結劑的剝離。 另外，在通過黏結劑將晶片直接連接到基板上時， 作爲連接基板若使用FR4基體材料等的㈣基板，使 用忒醯亞胺及聚脂等高分子薄膜作爲基體材料的撓性 電路板或者玻璃基板，連接後，源於同晶片的熱膨脹 率的不同而産生的内部應力，容易產生晶片和基板的 撓曲。再有，當將晶片向基板壓接使黏結劑流動的情 況下，許多孔隙發生在連接介面，存在耐濕性降低等 200900483 問題。 【發明内容】 本發明的目的在於提供一種電路連接用黏結劑，它 可抑制由於源於熱膨脹率的不同所産生的内部應力使 連接處的連接阻抗增大，黏結劑的剝離和晶片及基板 的撓曲。 本發明的電路連接用黏結劑是將相對的電路電極 經加熱、加壓，使加壓方向的電極間實現電連接的熱 黏結性黏結劑中，上述黏結劑具有以下特徵，即：它 含有分散的平均粒徑爲10#mw下的橡膠粒子和熱固 化的反應性樹脂，該黏結劑的Dsc (差 的發熱開始溫度爲的以上，而㈣反應^二析結) 束溫度爲260°C以下。 另外，本發明的黏結劑在從發熱開始溫度到固化反 應的’結束的溫度，肖DSC測得㈣熱量最好爲 50-140焦耳/克。 再有，本發明的黏結劑用DSC測得的固化反應的 6〇 %結束溫度最好在1 6 0 °C以下。 再有，反應性樹脂最好含有環氧樹脂和潛在性固化 劑。 再有’潛在性固化劑最好是銃鹽。 另外’本發明的黏結劑也可以含有以分散狀態存在 的0.1-3 0體積。/c的導電粒子。 200900483 本發明的黏結劑意在包含薄膜狀的黏結劑和糊狀 黏結劑兩者，但最好是薄臈狀黏結劑。 在將本發明的黏結劑做成薄膜狀的情況下，可以含 有形成溥膜的尚分子物質。 另外，本發明#薄臈在25^時的彈#率最好爲 5 0-1 OOOMPa > 若# 用太益 cm 使用本發明，可以吸收在抗熱衝擊試 驗及P C T試驗等的可貪况：上 + *人& " 士 、f π J罪性试驗中所産生的内部應力， 即使在可靠性試驗後也沒有連接處的連接阻抗增大及 黏結劑剝離的現象，可以得料接可#性提高的黏社200900483 IX. Description of the Invention: [Technical Field] The present invention relates to an electric material_adhesive for use in a circuit substrate 柘 ^ ^ η ^ ^ ^ , between a wrench or a 1C wafer and other electronic parts connected to a wiring substrate. [Prior Art] The S circuit boards or IC a η 楚 + ^ , c ^ ΒΗ . The electrical connection between the electronic parts such as the cloth and the circuit board is used to connect the number of the bonding agent or the number of conductive particles. The opposite-purpose conductive paint material material porting agent can't bond these two layers to the oppositely established two electrodes. After heating and adding, the electric material St is connected, and then it is made conductive in the pressing direction. And to achieve electrical connection. For example, in the Japanese Patent Application Laid-Open No. Hei 3-16147, a proposal is made to use an epoxy resin as a main component of a circuit connecting adhesive as a main component. However, the bonding impact test using epoxy resin as a main component and the PCT and other samples can be tested, and the internal stress generated by the difference in thermal expansion rate of the connection substrate is easy to cause an increase in the connection resistance at the joint and the binder. Stripping. In addition, when the wafer is directly connected to the substrate by a bonding agent, a (4) substrate such as an FR4 base material is used as the connection substrate, and a flexible circuit board or glass using a polymer film such as sulfimine or polyester as a base material is used. After the substrate is bonded, internal stress due to the difference in thermal expansion coefficient of the wafer is likely to cause deflection of the wafer and the substrate. Further, when the wafer is pressure-bonded to the substrate to cause the binder to flow, many voids occur at the connection interface, and there is a problem that the moisture resistance is lowered. SUMMARY OF THE INVENTION An object of the present invention is to provide a bonding agent for circuit connection which can suppress an increase in connection resistance at a joint due to internal stress caused by a difference in thermal expansion rate, peeling of a binder, and wafer and substrate. Flexed. The bonding agent for circuit connection of the present invention is a thermosetting bonding agent which heats and presses the opposite circuit electrodes to electrically connect the electrodes in the pressing direction, and the bonding agent has the following characteristics, that is, it contains dispersion The average particle diameter is 10#mw of the rubber particles and the thermally curable reactive resin, and the binder has a Dsc (difference in the onset temperature of the heat generation, and (4) reaction 2). The beam temperature is 260 ° C or less. . Further, the binder of the present invention preferably has a heat of 50-140 joules/gram from the start temperature of the heat generation to the end of the curing reaction. Further, the 6 〇 % end temperature of the curing reaction of the present invention by DSC is preferably at most 160 ° C. Further, the reactive resin preferably contains an epoxy resin and a latent curing agent. Further, the latent curing agent is preferably a barium salt. Further, the binder of the present invention may contain 0.1 to 30 volumes which are present in a dispersed state. /c conductive particles. 200900483 The binder of the present invention is intended to comprise both a film-like binder and a paste-like binder, but is preferably a thin-like binder. When the binder of the present invention is formed into a film, it may contain a molecular substance which forms a ruthenium film. In addition, the bombing rate of the present invention is preferably 5 0-1 OOOMPa > If the invention is used with Taiyi cm, it can absorb the craving in the heat shock resistance test and the PCT test. : + + person &" 士, f π J internal stress generated in the sin test, even after the reliability test, there is no connection impedance increase at the joint and the peeling of the adhesive, it can be obtained Pick up
劑。另外，若使用本發明，在將晶片實際安裝在LCD 板時，由於降低了基板的換曲可以抑㈣其對顯示質量 的不良影響十可以抑制由於撓曲的發生帶來的顯 示面的間隙的變化而產生顯示斑點的現象。 因此，本發明的電路連接用黏結劑最適用於僅僅將 LCB板和TAB，TAB和印刷基板，lcd板和ic晶片， IC sa片和印刷基板在連接時的加塵方向進行電連接。 【實施方式】 本發明的黏結劑在黏結劑中以分散狀態含有平均 粒徑爲l〇#m以下的橡膠粒子❶含有橡膠粒子的目的 是爲了緩解可靠性試驗中所產生的内部應力，防止黏 結劑的剥離’降低基板的撓曲。 橡璆粒子的平均粒徑最好是OH 〇#m，尤其好的 是〇.l-5"m。另外，特別好的是橡膠粒子在平均粒徑 以下的粒子占粒徑分佈的80%以上。 200900483 作爲本發明的橡膠粒子只要是玻璃化轉化溫度在 2 5°C以下的橡膠粒子均可，沒有特別限定，例如：可 以使用丁二烯橡膠，聚丙烯橡膠，丁苯橡膠，丁腈 膠，矽橡膠等。 θ 在上述的橡膠粒子中，最好使用矽橡膠粒子，因爲 其除了耐溶劑性優良外，分散性也很好。矽橡膠粒子 可，使用以下方法製得，即：將矽烷化合物或甲基三 烷氧基矽烷及/或其部分水解縮合物加到使用苛性納或 氨等驗性物質將pH值調整到9以上的乙醇水溶液中之 後，再使其水解縮聚的方法或者使其與有機矽氧烷共 聚的方法。另外，爲了提高反應性樹脂的分散性，最 好使用在分子端部或者分子内支鏈中含有氫氧基或環 氧基，酮亞胺，羧基，巯基等官能團的矽微粒子。 在用偶合劑對橡膠粒子表面進行處理的情況下，更 好的是提高對反應性樹脂的分散性。 橡膠粒子在室溫（25 I )下的彈性率最好是 HOOMpa’考慮到橡㈣子的分散性或降低連接時介 面的應力更好的是Lpa。但是，當選擇反應性樹 脂的時候’應考慮黏結劑的反應性和發熱量決定。 橡膠粒子相對於黏結劑組合物的使用量最好是相 對於黏結劑組合物爲⑽重量份時其爲1G.重量份。 作爲本發明所使用的反應性樹脂可以是例如，環氧 樹脂和潛在性固仆南丨μ、日人Λ 月J的此α物’自由基反應性樹脂和 有機過氧化物的混合物。 200900483 作 將兩種 由氯甲 樹脂； y求歹 構的秦 甘油謎 上的縮 :環氧樹脂可以使用以下例子令的單獨一種或 =上混合使用，但不受這些例子的限制。例如： ^丙貌和㈣A，^ AD衍生的双輪型環氧 氯甲基氧丙烷和線性酚醛清漆樹脂（7二乂少 夕夕）或甲酚-可溶性酚醛清漆樹脂（夕 二夕）衍生的環氧酚醛清漆樹脂，具有含萘環结 系環氧樹脂，以及在縮水甘油氨絡合物二縮： ’聯苯或者脂環式等的—個分子中具有二個以 水甘油基的環氧化合物。 雜暂1爲這些環氧㈣旨’爲了防止電子遷移最好使用將 雜質離子例如Na+’ C1-或者水解性氯的濃度降低到 300PPM以下的高純度品。 作爲潛在性固化劑可舉例如下， 子的限制。例m系，醯肼具體例 尔 版胼糸，二氟化硼-醯胺的 口物’鏡鹽’胺化醯亞胺’聚胺的鹽以及雙氰胺等。 '在^•些潛在性固化劑中，錡鹽的固化溫度在60°c 以^而其固化反應完成60%的溫度在l6(rc以下，因其 -μ反應性優良，有效壽命長而最適用。作爲錡鹽， 特別適用的是用一般式（1)表示的錡鹽 200900483Agent. In addition, if the present invention is used, when the wafer is actually mounted on the LCD panel, the reduction of the substrate can be suppressed, and (4) its adverse effect on the display quality can suppress the gap of the display surface due to the occurrence of the deflection. Change to produce a phenomenon of displaying spots. Therefore, the circuit-connecting bonding agent of the present invention is most suitable for electrically connecting only the LCB board and the TAB, TAB and the printed substrate, the lcd board and the ic wafer, the IC sa sheet and the printed substrate in the dusting direction at the time of connection. [Embodiment] The binder of the present invention contains rubber particles having an average particle diameter of 1 Å or less in a dispersed state in the binder, and the rubber particles are contained in order to alleviate internal stress generated in the reliability test and prevent sticking. Peeling of the agent 'reduces the deflection of the substrate. The average particle diameter of the rubber particles is preferably OH 〇 #m, and particularly preferably 〇.l-5"m. Further, it is particularly preferable that the particles of the rubber particles having an average particle diameter or less account for 80% or more of the particle size distribution. 200900483 The rubber particles of the present invention are not particularly limited as long as they have a glass transition temperature of 25 ° C or lower. For example, butadiene rubber, polypropylene rubber, styrene-butadiene rubber, and nitrile rubber can be used.矽 rubber and so on. θ Among the above rubber particles, ruthenium rubber particles are preferably used because they are excellent in dispersibility in addition to excellent solvent resistance. The ruthenium rubber particles can be obtained by adding a decane compound or methyltrialkoxy decane and/or a partially hydrolyzed condensate thereof to a pH of 9 or more by using an organic substance such as caustic soda or ammonia. After the aqueous ethanol solution, it is hydrolyzed or polycondensed or a method of copolymerizing it with an organic siloxane. Further, in order to improve the dispersibility of the reactive resin, it is preferable to use ruthenium fine particles containing a functional group such as a hydroxyl group or a epoxide group, a ketimine, a carboxyl group or a fluorenyl group at the molecular end or in the intramolecular branch. In the case where the surface of the rubber particles is treated with a coupling agent, it is more preferable to improve the dispersibility to the reactive resin. The elastic modulus of the rubber particles at room temperature (25 I ) is preferably that the HOOMpa' is more suitable for the dispersibility of the rubber (tetra) or the stress of the interface when the joint is lowered. However, when selecting a reactive resin, the reactivity and calorific value of the binder should be considered. The amount of the rubber particles to be used relative to the binder composition is preferably 1 G. by weight based on the (10) parts by weight of the binder composition. The reactive resin used in the present invention may be, for example, a mixture of an epoxy resin and a latent solid-reactive resin and an organic peroxide of an epoxy resin and a latent solid. 200900483 For the two kinds of glycerin which are made of chloroform resin; y, the epoxy resin can be used alone or in combination with the following examples, but not limited by these examples. For example: ^ propylene and (iv) A, ^ AD derived two-wheeled epoxy chloromethyl oxypropane and novolac resin (7 乂 乂 ) ) or cresol - soluble novolac resin (夕 夕 ) derived ring An oxyphenol novolak resin having a naphthalene ring-containing epoxy resin and an ethylene compound having two glycidyl groups in a molecule such as a glycidylamino complex dimer: 'biphenyl or an alicyclic ring . It is preferable to use a high-purity product in which the concentration of impurity ions such as Na+' C1- or hydrolyzable chlorine is reduced to 300 PPM or less in order to prevent electron migration. As a latent curing agent, the following restrictions can be exemplified. Examples are m, 醯肼 例 胼糸 胼糸 胼糸 胼糸 胼糸 胼糸 胼糸 胼糸 胼糸 胼糸 胼糸 胼糸 胼糸 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 。 。 。 。 。 。 。 'In some potential curing agents, the curing temperature of the cerium salt is 60 ° C and the curing reaction is 60% of the temperature is below 16 (rc, because of its excellent -μ reactivity, long effective life and optimum As a cerium salt, it is particularly suitable for the cerium salt represented by the general formula (1) 200900483
一但疋，在式（1 )中，Rl爲電子吸水性的基，例如， 亞3硝基’羰基，羧基，氰基三烷基銨，甲氟基；’ R爲電子供給性的基，例如:氨基，氳氧基，甲基. 爲非未核性陰離子，例如：六氟相鹽，六氟録酸鹽。 、銃鹽相對於環氧樹腊的使用量最好是2-20重^ 份。 夏 在本發明的黏結劑中最好混入分散導電粒子 ::爲了彌補晶片的凸緣或基板電極的高度誤差： 黏結劑具有各向異性的異電性。 使 反應性樹脂相對於黏結劑的使用量 黏結劑100重量份爲20-100重量份。 對於 作爲本發明的導電粒子可以使用例如Μ :：料等金屬粒子，但不受這些例子 的是在聚苯乙婦等高分子球形芯材的表面設置二好 t，AU’谭料等導電層，另外，在導電粒子的表面 msn，Au谭料等表面層。進-步形成表面層 疋·，了通過同底層（導電層）的結合提高導電 10 200900483 性。導電粒子的粒徑 请丨„ L 4义須比基板上的電極的最小間隔 還小。另外，在電極古 有同度誤差的情況下，導電趣 π最好比高度誤差要大，具體的…㈣。： 二’：其散劑中的導電粒子量最好是0·1-3。體積 尤其好的疋0.2-15體積％。 在本發明的黏結劑巾 劑中了以混入分散無機充填材料。 作爲本發明中可你田μ . ^ 吏用的無機充填材料可列舉如下 f 材料，但不受這些材料的 _ s _ 幻限制例如：熔融的二氧化 碎、日日體二氧化石夕、石夕酸 ^ 7酸鈣、氧化鋁、碳酸鈣等粉末。 無機充填材料的接用I# .1Λ 叼便用量最好是相對於黏結劑组合 物100重量份爲丨〇·200重 劑組。 量份。伤尤其好的是20-90重 撤ϋ Μ Μ此 “數，無機充填材料的使用量 越大效果越好；然而，用 者雪；I®門道f ώ 置匕大有產生黏結性降低或 電極間V電不良的傾向， & 用置過小則有不能充分胳 低熱膨脹係數的傾向。 無機充填材料的平均粒徑從 的觀點來看最好在3yWmm p 電不良 Α 下。另外，從防止在連接時 树知的流動性降低的觀點 、 傷的觀點來看，最好_ 對曰曰片的鈍化膜的損 料。&德** 吏用球狀填料作爲無機充填材 。.、.、機充填材料無論黏& 混入、分散。 以含有導電粒子都可 爲了更容易形成薄腔、菩 极犯甘 ^還可以將苯氧基樹脂，聚脂 树月曰，聚醯胺樹脂等熱塑 高八孑W Λ m 樹脂（以下稱爲薄膜形成性 …)加入到本發明的黏結劑中。這些薄膜形成性高 200900483 分子具有緩解反應性樹脂固化時的應力的效果。尤ι 好的是當其具有氫氧基等官能團時，薄膜形成性高$ 子有利於提高黏結性。 河刀 爲了將本發明的黏結劑做成薄膜形狀可以採用r 下的方法進行，gp :將至少&這些反應性樹脂，潛： 性固化劑組成的黏結劑組合物溶解或者分散在有機、、容 劑中使其成液體狀，然後塗覆在可以剝離的基體材料 上，在固化劑的活性溫度以下除去溶劑即可。這時所 用的溶劑最好是有利於提高材料溶解性的芳香族烴 和含氧系的混合溶劑。 、 本發明的黏結薄膜可以通過調整反應性樹脂，橡膠 粒=，薄膜形成性高分子材料等的使用量使薄膜的彈 造率（25C)爲 5(M〇〇〇MPa，最好是 7〇5()()Mpa。黏妹 薄膜的彈性率-超過1 000Mpa就不能將薄膜黏貼到電 ，板上，在將薄膜按規定的寬度切斷加工時存在黏結 薄膜由基體材料薄膜上剝離的傾向。另外，若彈性率 不足5GMPa，當同基體材料薄膜-起捲成1GM以上的 捲狀物時，存在黏結薄膜黏貼在基體材料薄膜的背面 =難於進仃將黏結薄膜黏貼到電路基板上的作業的傾 °另外這時’由於低分子的反應性樹脂的含量增 :’在壓接時存在産生許多孔隙的傾肖。再有，黏結 薄膜的彈性率(儲存彈性率：測定用薄膜厚度：⑺"⑷ 可以用黏彈性測定裝置（升溫速度：1〇r/分，頻率：iHz) 12 200900483 黏結劑的反應性可以用D S C (升溫速度：1 〇/分） 測定。本發明的黏結劑使甩DSC的發熱開始溫度是6〇 C以上，黏結劑的固化反應的80°/。的結束溫度在260 °C以下。通過選擇加入黏結劑中的反應性樹脂進行調 整使其達到這些溫度。再有’固化反應的6 〇 %的結束 溫度最好在1 6 0 °C以下。 基於本發明的黏結劑的固化反應的發熱量也可以 用DSC(升溫速度：1〇。〇/分）求得。發熱量最好爲5〇_14〇 焦耳/克，尤其好的是60-120焦耳/克，特別好的是 60-1 〇〇焦耳/克，通過改變反應性樹脂，橡膠粒子，薄 膜形成性高分子等的使用量進行調整。黏結劑的發熱 里若超過140焦耳/克，則由於黏結劑的固化收縮力及 T性率的增大等因素使内部應力增大，電路之間連接 時，存在電路基板撓曲導致連接可靠性降低或者電子 零件的特性降低等傾向。另外，在發熱量不足50焦耳 1克時，存在由於黏結劑的固化不充分，導致黏結性及 連接可靠性降低的傾向。 〜DSC是將供給或除去熱量的零位法作爲測定原理 使件在測定溫度範圍内不斷地消除同沒有發熱、吸熱 的標=試樣的溫度差，也可以使用市售的载装置;^ 二測定。黏結劑的反應是發熱反應，#以一定的升溫 圖^升級，试樣反應就產生熱量。將該發熱量輸出到 中將基線作爲基準，由發熱曲線和基線求得所 〜的面積’將其作爲發熱量。以1(rc/分的升溫速度從 至溫⑵。C)到300t左右進行測定，求得上述的發熱 13 200900483 里這些都疋凡全自動地進行的，若使用它可以很容 易地進行。另外，固化反應4 8〇%的結束溫度可以由 發熱量的面積求得。 實施你 將苯氧基樹脂（聯合碳化物公司（Uni〇n。如心 Μ·)製，PKHC)5〇克溶解在醋酸乙醋ιΐ5克中，得到 3〇重量。/◦的苯氧基樹脂溶液。 作爲矽酮，在2(TC將甲基三甲氧基矽烷加入到以 3〇〇轉/分鐘攪拌的PH值爲12的乙醇水溶液中使其水 解縮合，製得25 C的儲存彈性率爲8MPa，平均粒徑 爲2 # m的球形微粒子。 工 將含有苯氧基樹脂溶液（以固態重量比苯氧基樹脂 45克）硅酮微粒子3〇克，微膠囊型潛在性固化劑的液 體環氧樹脂(環氧當* 185’旭化成工業股份有限公司 製，諾瓦卡（Novacul) ΗΧ·3941)20克，双酚A型環 7脂（環氡當量180)5〇克混合，將在聚苯乙烯系核芯<(直 徑·· 5以m)的表面形成Au層的導電粒子以6體積％分 散在其中從而製得薄膜塗覆用溶液。隨後，用塗覆二 置將該溶液塗覆到對厚度爲5〇^m的薄膜的單面進^ 表面處理的PET(聚對苯二f.酸乙醋，基體材料薄膜， 分離器)薄膜上，、經7(TC熱風乾燥1〇分鐘，得到黏結 劑層厚度爲45 的薄膜狀黏結劑。關於該黏結劑、了 對反應開始時間，反應結束時間，固化反應的和 80%的結束溫度，直到固化反應的8〇%結束的的 14 200900483 發熱量’以及直到固化反應完全結束的DSC的發熱量 及彈性率進行測定，其結果示於表1。 其次，使用所得的薄膜狀黏結劑如以下所示地將帶 金凸緣（面積80x80 # m，間隔30; m，高度15 # m，凸 緣數28 8)的晶片（lOxi 〇mm，厚度500# m)同具有和晶 片的電極相對應的電路電極的鍍Ni/Au的Cu電路印刷 板進行連接。 將薄膜狀黏結劑（12x12mm)在80°C，l.〇Mpa(l〇公 斤力/釐米2)的壓力下黏貼在鍍Ni/Au的Cu電路印刷 板（電極高度20mm，厚度〇.8mm)，剝離分離器，佶曰 日曰 片的凸緣和鍍Ni/Au的Cu電路印刷板（厚度〇.8mm)的 位置吻合。隨後，在i 80<=c，75克/每個凸緣，2〇秒的 條件下由晶片上方進行加熱、加壓，從而實現本連接。 本連接後晶片的撓曲爲1 # m(向晶片方向凸起的 撓曲）°另外，本連接後的連接阻抗，每個凸緣爲最高 15ΜΩ ’平均爲8ΜΩ，絕緣阻抗在ι88Ω以上。這些 值即使在進行-55-1251的抗熱衝擊試驗1000次迴圈 處理’ PCT試驗（121°C，0.2Mpa(2個大氣壓））200小時， 260 C釺焊浴中浸潰1 〇秒鐘後也沒有變化，表明其良 好的連接可靠性。 實施例二 除了將10體積％的導電粒子分散在黏結劑中外， 15 200900483 其餘同實施#卜相同，得到薄膜塗覆用溶液。 隨後，使用塗覆裝置將該溶液塗覆在對厚度爲50 //Π1的薄膜的單面進行表面處理的ΡΕΤ薄臈上，經 °(：熱風乾燥10分鐘，得到黏結劑層厚度爲忉以瓜的薄 膜狀黏結劑a。 ' 隨後’在上述製作塗覆用溶液的過程中，除了沒有 將形成Au層的導電離子分散在溶液中這一點外，$用 與上相同的方法製作薄膜塗覆用溶液，使用塗覆裝置 將該溶液塗覆在對厚度爲5〇//111的薄膜的單面進^表 面處理的PET薄膜上，經7〇〇c熱風乾燥1〇分鐘，得 到黏結劑層厚度爲15/zm的薄膜狀黏結劑b。再將所 得到的薄膜狀黏結劑a和b在4〇 t 一邊加熱，一邊用 輥式層壓裝置製成層壓的二層結構的各向導性的導電 薄膜。 關於這種黏結劑，同實施例一同樣地進行測定，其 結果不於表1。 其次，使用所製得的各向異向導電薄膜，如以下所 示地將帶金凸緣（面積：50x50 /z m，間隔：20#m，高 度.15/z m，凸緣數362)的晶片（1.7x17mm，厚度：5〇〇 #m)同帶ITO電路的玻璃基板（厚度：ilmm)進行連 接。將各向異性導電薄膜（2x20mm)在80。(：，lMpa(10 公斤力/董米2)的壓力下黏貼到帶ΐτο電路的玻璃基板 上後，剝離分離器，使晶片的凸緣和帶IT〇電路的玻 璃基板的位置吻合。隨後，在190°C，40克/每個凸緣， 16 200900483 ίο秒的條件下由晶片上方進行加熱，加壓，從而實現 本連接。本連接後晶片的撓曲爲2.5//m。另外，連接 阻抗每一個凸緣爲最高80M Ω，平均爲3 0M Ω，絕緣 阻抗在108Ω以上。這些值即使在進行_4〇_1〇(rc的抗 熱衝擊試驗1〇〇〇次迴圈處理，高溫，高濕（85。〇， 85%RH，1〇〇〇小時）試驗後也沒有變化，表明其良好的 連接可靠性。 實施例三 將苯氧基樹脂（聯合碳化物公司（Uni〇n CarbideHowever, in the formula (1), R1 is an electron-absorbent group, for example, a sub-3 nitro 'carbonyl group, a carboxyl group, a cyanotrialkylammonium group, a methyl fluoride group; 'R is an electron-donating group, For example: amino group, decyloxy group, methyl group. It is a non-nuclear anion such as a hexafluorophase salt or a hexafluoroate salt. The use amount of the cerium salt relative to the epoxy resin wax is preferably 2-20 parts by weight. Summer It is preferable to mix the dispersed conductive particles in the binder of the present invention :: To compensate for the height error of the flange or the substrate electrode of the wafer: The adhesive has anisotropic isoelectricity. The amount of the reactive resin to be used relative to the binder is 20 to 100 parts by weight based on 100 parts by weight of the binder. For the conductive particles of the present invention, for example, metal particles such as ruthenium or the like can be used, but it is not necessary to provide a conductive layer such as AU' tan etc on the surface of a polymer spherical core material such as polystyrene. In addition, a surface layer such as msn, Au tan or the like on the surface of the conductive particles. Step-by-step formation of the surface layer 疋·, through the combination of the same underlying layer (conductive layer) to improve conductivity 10 200900483. The particle size of the conductive particles should be less than the minimum spacing of the electrodes on the substrate. In addition, in the case of the same degree of error in the electrode, the conductivity π is better than the height error, specifically... (4): Two': The amount of conductive particles in the powder is preferably 0·1-3. The volume is particularly preferably 0.2-15% by volume. In the adhesive agent of the present invention, the dispersed inorganic filler is mixed. As the inorganic filling material which can be used in the present invention, the following f materials can be cited, but are not limited by the _ s _ illusion of these materials, for example: molten oxidized slag, Japanese sulphur dioxide, sap, stone Powder of calcium citrate, aluminum oxide, calcium carbonate, etc. Inorganic filling material I# .1 叼 The amount of sputum is preferably 丨〇·200 heavy group with respect to 100 parts by weight of the binder composition. In particular, the injury is particularly good at 20-90 ϋ Μ Μ “ “ , , , “ “ “ “ “ “ “ “ 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机 无机Or the tendency of V-electricity between electrodes is poor, and if it is too small, it may not be sufficient. The tendency to have a low coefficient of thermal expansion. The average particle diameter of the inorganic filler is preferably from 3 dWmm p 电 under the viewpoint of the average particle diameter. Further, from the viewpoint of preventing the fluidity which is known at the time of connection from being lowered, and from the viewpoint of the damage, it is preferable to damage the passivation film of the ruthenium sheet. & ** 球 球 球 球 球 球 球 球 球 球 球 球 球 球 球.., machine filling materials, regardless of adhesion & mixing, dispersion. In order to make it easier to form a thin cavity, it is also possible to use a thermoplastic resin such as a phenoxy resin, a polyester resin, a polyamide resin, or the like, and a thermoplastic high-eight 孑 W Λ m resin (hereinafter referred to as Film formability...) is added to the binder of the present invention. These films are highly formable. 200900483 The molecule has an effect of alleviating the stress at the time of curing of the reactive resin. It is preferable that when it has a functional group such as a hydroxyl group, the film formability is high to improve the adhesion. In order to form the shape of the adhesive of the present invention into a film shape, the method of r can be carried out by using a method of r, wherein at least a reactive resin composed of a reactive resin or a curing agent is dissolved or dispersed in an organic solvent. The solvent is made into a liquid, and then coated on a peelable substrate, and the solvent is removed below the activation temperature of the curing agent. The solvent used at this time is preferably an aromatic hydrocarbon and an oxygen-containing mixed solvent which are advantageous for improving the solubility of the material. In the adhesive film of the present invention, the elastic modulus (25C) of the film can be adjusted to 5 (M〇〇〇MPa, preferably 7〇) by adjusting the amount of the reactive resin, rubber particles =, film-forming polymer material, and the like. 5()()Mpa. The elastic modulus of the adhesive film - if it exceeds 1 000 MPa, the film cannot be adhered to the electric plate. When the film is cut at a predetermined width, there is a tendency that the adhesive film is peeled off from the film of the base material. In addition, if the modulus of elasticity is less than 5 GMPa, when the film of the base material is rolled into a roll of 1 GM or more, the adhesive film adheres to the back surface of the film of the base material = it is difficult to advance and adhere the adhesive film to the circuit board. In addition, at this time, the content of the reactive resin is increased due to the low molecular weight: 'There is a large amount of voids generated during the crimping. Further, the elastic modulus of the bonded film (storage elastic modulus: thickness of the film for measurement: (7)" (4) Viscoelasticity measuring device (temperature rising rate: 1 〇 r / min, frequency: i Hz) 12 200900483 The reactivity of the binder can be measured by DSC (heating rate: 1 〇 / min). The binder of the present invention enables The heating initiation temperature of DSC is 6 〇C or more, and the curing temperature of the curing agent is 80 ° /. The end temperature is below 260 ° C. It is adjusted to reach these temperatures by selecting the reactive resin added to the binder. The end temperature of the curing reaction is preferably 1600 ° C or less. The calorific value of the curing reaction of the binder according to the present invention can also be obtained by DSC (heating rate: 1 Torr. 〇 / min). The calorific value is preferably 5 〇 _14 〇 joules / gram, particularly preferably 60-120 joules / gram, particularly preferably 60-1 〇〇 joules / gram, by changing the reactive resin, rubber particles, film formation When the amount of the polymer used is more than 140 J/g, the internal stress increases due to factors such as the curing shrinkage force and the T-rate of the adhesive, and when the circuits are connected, There is a tendency that the reliability of the connection reliability is lowered or the characteristics of the electronic component are deteriorated when the circuit board is bent. When the amount of heat generation is less than 50 joules, the curing of the binder is insufficient, and the adhesiveness and connection reliability tend to be lowered. ~DSC is a zero-position method that supplies or removes heat as a measurement principle to continuously eliminate the temperature difference between the standard and the sample without heat and heat absorption in the measurement temperature range, and a commercially available carrier device can also be used; The reaction of the binder is an exothermic reaction, # is upgraded with a certain temperature rise diagram, and the sample reacts to generate heat. The heat is output to the middle base as a reference, and the area of the heat generation curve and the baseline is obtained. This is taken as the calorific value. The measurement is performed at a temperature increase rate of 1 (rc/min from the temperature (2).C) to about 300 t, and the above-mentioned heat generation 13 200900483 is obtained in a fully automatic manner. It is easy to carry out. Further, the end temperature of the curing reaction of 48% by weight can be obtained from the area of the calorific value. Implementation You can dissolve 5 gram of phenoxy resin (PKHC, manufactured by Union Carbide Co., Ltd., PKHC) in 5 g of ethyl acetate acetonate to give a weight of 3 ounces. / bismuth phenoxy resin solution. As an anthrone, 2 (TC) methyl methoxy decane was added to an aqueous solution of ethanol having a pH of 12 stirred at 3 rpm, and the storage elastic modulus of 25 C was 8 MPa. Spherical microparticles with an average particle size of 2 # m. The phenoxy resin solution (45 g of phenoxy resin in solid weight) of silicone microparticles, 3 g of microcapsule-type latent curing agent (Epoxy when * 185 'Asahi Kasei Industrial Co., Ltd., Novacul (ΗΧ 3941) 20 grams, bisphenol A type ring 7 grease (ring 氡 equivalent 180) 5 gram mixed, will be in polystyrene The conductive particles in which the Au layer is formed on the surface of the core <(diameter··5 in m) are dispersed in 6 vol% to prepare a solution for film coating. Subsequently, the solution is applied to the solution by coating On a film of PET (polyphenylene terephthalate, base material film, separator) treated with a single-sided surface of a film having a thickness of 5 μm, dried by 7 (TC hot air for 1 minute, A film-like binder having a thickness of the adhesive layer of 45 is obtained. With respect to the binder, the reaction start time is reacted. The end time, the curing reaction and the end temperature of 80%, until the end of the curing reaction of 14% of the end of the 200900483 heat generation 'and the heat and the elastic modulus of the DSC until the curing reaction is completely completed, the results are shown in the table 1. Next, using the obtained film-like adhesive as shown below, a wafer with a gold flange (area 80x80 #m, spacing 30; m, height 15 #m, number of flanges 28 8) (lOxi 〇mm, thickness 500) #m) Connect the Ni/Au-plated Cu circuit printed board with the circuit electrode corresponding to the electrode of the wafer. The film-like adhesive (12x12mm) at 80 °C, l.〇Mpa (l〇 kg force / Adhesive to a Ni/Au-coated Cu circuit printed board (electrode height 20 mm, thickness 〇.8 mm) under a pressure of 2 cm), peeling separator, flange of the next day and Ni/Au-plated Cu circuit printed board The position of (thickness 〇.8mm) is matched. Then, under the condition of i 80<=c, 75 g/each flange, 2 sec., heating and pressurization are performed from above the wafer to realize the connection. The deflection of the wafer is 1 # m (flexure convex toward the wafer). In addition, this connection The connection impedance, each flange is up to 15 Ω Ω 'average 8 Μ Ω, and the insulation resistance is above ι 88 Ω. These values are even subjected to the thermal shock test of -55-1251 for 1000 cycles of 'PCT test (121 ° C, 0.2 Mpa (2 atmospheres)) 200 hours, no change after immersion in 260 C釺 solder bath for 1 〇 second, indicating good connection reliability. Example 2 except that 10% by volume of conductive particles were dispersed in the binder Chinese and foreign, 15 200900483 The same as the implementation of the same, to obtain a solution for film coating. Subsequently, the solution was applied to a tantalum crucible which was surface-treated on one side of a film having a thickness of 50 Π1 using a coating device, and dried at a hot air for 10 minutes to obtain a thickness of the adhesive layer. Membrane-like binder a. 'Subsequent' In the process of preparing the coating solution described above, except that the conductive ions forming the Au layer were not dispersed in the solution, the film coating was carried out in the same manner as above. Using a solution, the solution was coated on a single-sided surface-treated PET film of a film having a thickness of 5 Å//111 using a coating device, and dried by hot air at 7 ° C for 1 minute to obtain a layer of a binder. Film-like adhesive b having a thickness of 15/zm. The obtained film-like adhesives a and b are heated on the side of 4 〇t, and the respective layers of the laminated two-layer structure are formed by a roll laminator. The conductive film was measured in the same manner as in Example 1. The results are not shown in Table 1. Next, using the obtained anisotropic conductive film, a gold-clad flange (area) was used as shown below. :50x50 /zm, interval: 20#m, height.15/ A wafer (1.7 x 17 mm, thickness: 5 〇〇 #m) of zm, flange number 362) was bonded to a glass substrate (thickness: ilmm) with an ITO circuit. An anisotropic conductive film (2 x 20 mm) was placed at 80. (: After sticking to the glass substrate with the ΐτο circuit under the pressure of lMpa (10 kg force / Dong m 2), the separator was peeled off to match the position of the flange of the wafer with the glass substrate with the IT 〇 circuit. Subsequently, at 190 °C, 40 g / each flange, 16 200900483 ί ο under conditions of heating and pressurization from above the wafer to achieve this connection. The deflection of the wafer after this connection is 2.5 / / m. In addition, the connection impedance per One flange is up to 80M Ω, with an average of 30M Ω, and the insulation resistance is above 108Ω. These values are even after _4〇_1〇 (rc thermal shock test 1 回 loop processing, high temperature, high Wet (85. 〇, 85% RH, 1 hr) did not change after the test, indicating its good connection reliability. Example 3 phenoxy resin (Union Carbide)
Ltd.)製，PKHC)50克，溶解在醋酸乙酯115克中，製 得3 0%的溶液。 將具有固態重量比的苯氧基樹月旨6〇克，2〇重量％ 的平均粒徑爲0.2" m的丙烯酸粒子（儲存彈性率爲 3MPa)分散在其中的雙㉟A型環氧樹脂(環氧當量 間25克，雙酚八型固態環氧樹脂（環氧當量：丨 克，P-醋酸苯基甲續酸鹽(非求核性陰離子：六氟銻酸 鹽)3克混合’再將在聚苯乙稀系核芯(直徑：3㈣的50 g of PKHC, manufactured by Ltd.), dissolved in 115 g of ethyl acetate to prepare a 30% solution. A bisethoxy-type epoxy resin having a solid weight ratio of 6 gram, a bismuth 35A type epoxy resin having an average particle diameter of 0.2 " m (storage modulus: 3 MPa) dispersed therein 25 grams of oxygen equivalent, bisphenol eight type solid epoxy resin (epoxy equivalent: gram, P-acetate phenyl methacrylate (non-nuclear anion: hexafluoroantimonate) 3 grams of mixed 'will In the polystyrene core (diameter: 3 (four)
表面形成金層的10體積％的導電粒子分散混合 而製得薄膜塗覆用溶液。 T 隨後，使用塗覆I置將該溶液塗覆在將厚度爲 的薄膜的單面進行表面處理後的卿薄膜上， 7(TC經熱風乾燥1G分鐘’從而製得㈣㈣的厚声 1 0 e m的薄膜狀黏結劑c。 又 隨後，在上述製作薄膜塗覆用溶液的過程中，除 17 200900483 沒有將形成Au層的導電粒子分散在溶液中這—點外， 其餘用同上相同的方法製得薄膜塗覆用溶液，使用塗 覆裝置將該溶液塗覆到對厚度爲5G" m的薄膜的單面 進行表面處理後的PET薄膜上，纟7(TC經熱風乾燥1〇 刀鐘’從而製得黏結劑層的厚度爲15//m的薄膜狀黏 結劑d。 將所製得的薄膜狀黏結劑c和d在4〇t： —邊加 熱’：邊用輥式層壓裝置製作層壓成二層結構的各向 異性導電薄膜。關於該黏結薄膜同實施例一同樣地進 行測定。其結果示於表1。 其次，使用所製得的各向異性導電薄膜，如以下所 不將帶金凸緣（面積：50x5〇e m，間隔：2〇# m，高度： 凸緣數362)的晶片（17xl7mm，厚度：5〇〇以 ni)同帶ITO電路的玻璃基板（厚度：ilmm)進行連接。 將各向異性導電薄膜（2x20mm)在sot，以1MPA(1()公 斤力/釐米2)的壓力黏貼到帶IT〇電路的玻璃基板上， 剝離分離器，使晶片的凸緣和帶ΙΤ〇電路的玻璃基板 的位置吻合。隨後，在15〇°c，40克/每個凸緣，1〇秒 的條件下由晶片上方進行加熱、加壓，從而實現本連 接本連接後晶片的挽曲爲另外，連接阻抗 每一個凸緣最高爲50ΜΩ ’平均爲20ΜΩ，飽緣阻抗 在108Ω以上’這些值即使經_4〇_1〇〇。(：抗熱衝擊試驗 1000次迴圈處理’高溫、高濕（85°c/85〇/0rh，1〇00小 時）試驗後也沒有變化，表明良好的連接可靠性。 18 200900483 比較例一 使用沒有混合橡膠粒子的各向異性導電薄膜 FC-110A(曰立化成工業工股份有限公司製，膜厚：45〆 m)同實施例一進行比較試驗，其結果示於表1。 其次，使用上述薄膜狀黏結劑，如以下所示，將帶 金凸緣（面積·· 80x8〇em，間隔：3〇"m，高度：15// m，凸緣數288)的晶片（1〇xl〇mm，厚度：5〇〇以⑷同鍍 Ni/Au的Cu電路印刷板進行連接。將薄膜黏結劑 (12xl2mm)在8(TC，1Mpa(1〇公斤/羞米2)的壓力下黏 貼到鍍Ni/Au的Cu電路印刷板上（電極高度：2忭瓜， 厚度：0.8mm) ’剝離分離器後，使晶片的凸緣同鍍Ni/Au 的Cu電路印刷板的位置吻合。隨後，在19〇。〇，乃克 ’每個凸緣，1〇秒的條件下由晶片上方進行加熱，加 壓，從而實現本連接。本連接後晶片的撓曲爲7.2# m(向晶片方向凸起的繞曲）。另外，本連接後的連接阻 抗爲每-個凸緣最高爲2嶋，平均爲刪ω，絕緣 阻抗在10 8 Ω以上。遠技β日> 運接阻抗經-55-125。(：的抗熱衝擊 試驗簡次迴圈處理，p„試驗⑽。c，2MpA(2個 大乳壓))200小時，26〇t的釺焊浴浸潰 增大之外還産生―些連接不良的情況。 比較例二 使用將由厚度爲 的含有導電粒子的薄膜層和 19 200900483 厚度爲15 // m10% by volume of the conductive particles forming a gold layer on the surface were dispersed and mixed to prepare a solution for film coating. T Subsequently, the solution was coated on a clear film which was surface-treated with one side of the film of thickness, and 7 (TC was dried by hot air for 1 G minutes) to obtain a thick sound of (4) (four) 1 0 em The film-like adhesive agent c. Subsequently, in the above process for preparing the film coating solution, except that 17 200900483 does not disperse the conductive particles forming the Au layer in the solution, the same method is used in the same manner as above. The film coating solution was applied to a PET film having a surface treated on one side of a film having a thickness of 5 G" m using a coating device, and 纟7 (TC was dried by hot air drying for 1 knives clock). A film-like binder d having a thickness of 15/m was obtained. The film-like binders c and d obtained were heated at 4 〇t:-side: a laminate was fabricated by a roll laminator An anisotropic conductive film having a two-layer structure was measured in the same manner as in Example 1. The results are shown in Table 1. Next, the obtained anisotropic conductive film was used, as will not be described below. Gold flange (area: 50x5〇em, interval: 2 #m, Height: The number of flanges 362) (17xl7mm, thickness: 5〇〇 in ni) is connected to the glass substrate (thickness: ilmm) with ITO circuit. An anisotropic conductive film (2x20mm) is in sot, The film was adhered to a glass substrate with an IT〇 circuit at a pressure of 1 MPA (1 (1 kgf/cm 2 ), and the separator was peeled off to match the position of the flange of the wafer with the glass substrate with the germanium circuit. Subsequently, at 15 〇°c, 40 g/each flange, heating and pressurizing from above the wafer under the condition of 1 sec., so that the connection of the wafer after the connection is achieved, in addition, the connection impedance is up to 50 ΜΩ per flange. 'The average is 20 Μ Ω, and the saturation impedance is above 108 Ω'. These values are even _4 〇 1 〇〇. (: 1000 cycles of thermal shock test 'high temperature, high humidity (85 ° c / 85 〇 / 0rh, 1 00 hours) There was no change after the test, indicating good connection reliability. 18 200900483 Comparative Example 1 using an anisotropic conductive film FC-110A without a mixed rubber particle (manufactured by 曰立化成工工股份有限公司, film thickness) :45〆m) compared with the first embodiment, The results are shown in Table 1. Next, using the above-mentioned film-like adhesive, as shown below, a gold-clad flange (area · 80 x 8 〇 em, interval: 3 〇 " m, height: 15 / / m, number of flanges 288 The wafer (1〇xl〇mm, thickness: 5〇〇 is connected to the Ni/Au Cu circuit printed board with (4). The film adhesive (12xl2mm) is at 8 (TC, 1Mpa (1〇kg/羞米) 2) Adhere to the Ni/Au-plated Cu circuit printing plate under pressure (electrode height: 2 忭 melon, thickness: 0.8 mm) 'After peeling off the separator, the flange of the wafer is printed with the Ni/Au-plated Cu circuit. The position of the board is the same. Subsequently, at 19 〇. 〇, 克 克 ' Each flange, heated and pressed under the wafer for 1 sec to achieve this connection. The deflection of the wafer after the connection was 7.2 #m (curved convex in the direction of the wafer). In addition, the connection resistance after this connection is up to 2 每 per flange, with an average of ω and an insulation resistance of 10 8 Ω or more. Telemetry beta day > The impedance of the transmission is -55-125. (: The thermal shock test is a simple loop treatment, p„ test (10). c, 2MpA (2 large emulsion pressure)) 200 hours, 26〇t 釺 solder bath dipping increase also produces some connections Poor case. Comparative Example 2 uses a thin film layer containing conductive particles and a thickness of 19 200900483 with a thickness of 15 // m
化成工業股份有限公司製， 庄等電薄膜AC-8401(曰立 膜厚：23 # m)相對實施例 二進行比較試驗，其結果示於表1。 ^使用該各向異性導電薄膜，如以下所述將帶 金凸緣（面積：50x50 " m，間隔20" m，高度：15# m , 凸緣數362)的晶片（1.7xl7mm，厚度：5〇〇"妁和帶ιτ〇 電路的玻璃基板（厚度：l.lmm)進行連接。將各向異性 導電薄膜（2x20mm)在8〇。〇，以iMPa的壓力黏貼到帶 ITO電路的玻璃基板上後，剝離分離器，使晶片的凸緣 和帶ITO電路的玻璃基板的位置吻合。隨後，在i 9〇 °C，40克/每個凸緣，10秒的條件下由晶片上方進行加 熱、加壓，實現本連接。本連接的晶片的撓曲爲8. m，同實施例二相比撓曲增大。 200900483 表1 專案 實施例 1 實施例 2 實施例 3 比較例 1 比較例 2 反應開始溫度(°c) 90 90 80 90 90 反應結束溫度(°c) 190 200 240 206 205 固化反應的80%的結束 溫度(°C) 160 160 230 180 180 固化反應的60%的結束 溫度(°C) 145 145 160 160 150 直到固化反應的80%結 束的DSC的發熱量(焦耳 /克） 75 70 120 180 160 直到固化反應結束的 DSC的發熱量(焦/克） 90 85 150 200 200 彈性率(25°C，Mpa) 600 600 200 2000 2000 21 200900483 【圖式簡單說明】 益 【主要元件符號說明】A chemical test film, AC-8401 (film thickness: 23 #m), manufactured by Chemical Industry Co., Ltd., was compared with Example 2, and the results are shown in Table 1. ^ Using the anisotropic conductive film, a wafer with a gold flange (area: 50x50 " m, spacing 20 " m, height: 15 # m, number of flanges 362) as described below (1.7 x 17 mm, thickness: 5 〇) 〇"妁 and the glass substrate (thickness: l.lmm) with the ιτ〇 circuit are connected. The anisotropic conductive film (2x20mm) is applied at 8 〇. Thereafter, the separator was peeled off to match the position of the flange of the wafer and the glass substrate with the ITO circuit. Subsequently, heating was performed from above the wafer under conditions of 10 Å ° C, 40 g / each flange, 10 seconds, Pressurized to achieve the connection. The deflection of the wafer of this connection is 8. m, and the deflection is increased as compared with the second embodiment. 200900483 Table 1 Special Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Reaction Starting temperature (°c) 90 90 80 90 90 End of reaction temperature (°c) 190 200 240 206 205 80% end temperature of curing reaction (°C) 160 160 230 180 180 60% end temperature of curing reaction (° C) 145 145 160 160 150 The calorific value of the DSC until the end of 80% of the curing reaction ( Ears/gram) 75 70 120 180 160 The calorific value of the DSC until the end of the curing reaction (coke/g) 90 85 150 200 200 Elasticity (25°C, Mpa) 600 600 200 2000 2000 21 200900483 [Simplified illustration] Benefit [main component symbol description]