TW200847385A - Chip-on-lead and lead-on-chip stacked structure - Google Patents

Chip-on-lead and lead-on-chip stacked structure Download PDF

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Publication number
TW200847385A
TW200847385A TW96117693A TW96117693A TW200847385A TW 200847385 A TW200847385 A TW 200847385A TW 96117693 A TW96117693 A TW 96117693A TW 96117693 A TW96117693 A TW 96117693A TW 200847385 A TW200847385 A TW 200847385A
Authority
TW
Taiwan
Prior art keywords
group
wafer
adhesive layer
lead
lead frame
Prior art date
Application number
TW96117693A
Other languages
English (en)
Inventor
Shih-Wen Chou
Yu-Tang Pan
Chun-Hung Lin
Original Assignee
Chipmos Technologies Inc
Chipmos Technologies Bermuda
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chipmos Technologies Inc, Chipmos Technologies Bermuda filed Critical Chipmos Technologies Inc
Priority to TW96117693A priority Critical patent/TW200847385A/zh
Priority to US12/108,470 priority patent/US20080283981A1/en
Publication of TW200847385A publication Critical patent/TW200847385A/zh

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)

Description

200847385 九、發明說明： 【發明所屬之技術領域】 ‘ 本發明係關於積體電路之封裝結構及其封裝之方法，特別是有關於一 種結合LOC (Lead on Chip)及COL (Chip on Lead)技術之多晶片堆疊封 ^ 裝結構。 【先前技術】 近年來’半導體的後段製程都在進行三度空間(Three Dimension ; 3D)的封 裝，以期利用最少的面積來達到較高的密度或是記憶體的容量等。為了能達到 此一目的，現階段已發展出使用晶片堆疊(chip贫⑽匕幻的方式來達成三度空間 (Three Dimension ; 3D)的封裝。 在習知技術中，例如美國專利第6744121，即揭露一種使用導線架來形成多 晶片堆疊之結構，如第la圖所示。很明顯地，在第1圖之封裝結構中，為避免下 層晶片之金屬導線與上層堆疊晶片之背面接觸，故將導線架作了多次的彎折， 藉由、奢折所开>成之咼度差來保護下層晶片之金屬導線。然而，經過多次彎折的 導線架谷易變形，造成後續晶片不易對準。另外，，彎折的導線架會使得封裝结 I構鬆散，致使無法縮小封裝體積。此外，由於導線架作了多次的彎折，因此每 個晶片與導線架之黏著面積不足，容易在注膜過程中，造成晶片脫離。 另外，在美國專利第6838754及美國專利第6977427，也揭露一種使用導線架 來形成多晶片堆疊之結構，如第lb圖及第lc圖所示，同樣的，在第化圖及第lc 圖的實施例中，均可能在上層晶片與下層晶片接合的過程中，發生上層晶片的 背面與下層晶片上的金屬導線接觸而造成短路或金屬導線剝落等問題。 【發明内容】 有鑒於發明背景中所述之晶片堆疊方式之缺點及問題，本發明提供一種使 用以黏著層來間隔晶片間的堆疊方式，來將複數個尺寸相近似的晶片堆疊成一 5 200847385 種三度空間的封裝結構。 積並=加的在提供—種簡單的晶片堆疊封裝結構，可以縮小封裂體 一=此柄明為一種多晶片堆疊之封裝結構，包括一導線架、一第一 二則固十仃之弟一内引腳群與平行之第二 =面之接近中央區域配置有複數個金屬焊塾，並藉由 Γ内引腳群與該第二内引聊群之下表面，且曝露出該複數個金:==亥 該第一内引腳群與第二内引腳群之上二5^第=著層固接於 導線架之該第一内引腳群與該第二:引 引腳群與該第二内引腳群之金屬導線不接觸該第二晶片之一背面片…亥弟一内 本發明接紐供-鮮晶牌4之縣方法，包括：脖 複數個内引腳與複數個外引腳輯成，該内引腳包括 =:由 間隔相對排列；形成-第-黏著層於該導線架之該第—内引 = ::之背面著第一晶片於該導線架之該第一内引腳群與該二二 群之背面，並使位於該第-晶片之主動面中央區域上的金屬焊墊曝露 次金屬導線連接製程，將該第-晶片與該導線架之㈣腳形成電仃 仏—第二晶片，並於該第二晶片之背面形成一第二黏著層；固接=楗 該導線架之該第-内引腳群與該第二㈣腳群之正面，藉由該第^曰片於 ，空間，以使連接該第-晶片與該第一内引腳群與該第二内引腳群 線不接觸該第二晶片之-背面·，執行第二次金屬導線連接製程，將金屬導 與該導線架之内引腳形成電性連接；執行—封膠f 晶片 7 弟一晶片及該第二 200847385 晶片以及該導線架之該第-㈣腳群與該第二内引腳群包覆。 【實施方式】 本發明在此所探討的方向為—種伽；堆疊的方式，來將複數個尺寸相 近似的晶片堆疊成-種三度空間的封裝結構。為了能徹底地瞭解本發明，將在 下列的描射提麟錢封裝步觀細魏構遗_，本發_施行並未 限定晶片堆疊的方狀技藝者所熟f的特殊細節。另—方面麵周知的晶片 形成方式錢晶U鱗後段餘謂細步職未姆於㈣巾，簡免造成 本發明不必要之關。細，對於本發·健實補，齡詳細描述如下， 然而除了這些詳細觀之外，本發_可_泛地贿在其他的實施例中，且 本發明的範圍不受限定，其以之後的專纖圍為準。 在現代的半導體封裝製財，均是將—個已經域前段製师咖制 Pr〇cessK0aaK(wafe^^tg,b4s(^ ^ ? 2 20 mil之間，然後，再選擇性地塗佈㈣㈣或網印(p触㈣一層高分 ㈣黯)材瓣晶片的背面，此高分子材料可妓—鋪脂㈣㈣，特別是一 種B-Stage_。再經由—個烘烤或是照絲程，使得高分子材料呈現一種 =稍度的相化膠；再接著，將—個可以移除的膠帶(响朗於半固化狀的高 二:材:亡然後’進行晶圓的切割(_ίη§ΡΓ_8)，使晶圓成為-顆顆的晶片 ㈣，·最後，就可將-顆顆的晶片與基板連接並轉晶片形成堆疊晶片結構。 料’請參考第2圖’縣發明之—具體實_堆疊難剖視圖。 第2圖所不’多晶片堆疊封裝結構2〇係由導 數條金屬導線224、234所组成。導_ 2 Ww日片22日日片23與稷 係由硬數個内引腳211與複數個外 引腳加所構成，而内引腳如包括有複數個平行之内引腳群2⑴盘 引腳群2112,且内引腳群2111與内引腳群浦之末端係以一間隔相對排列之。 “晶片22之主動面之接近中央區域附近221配置有複數個金屬焊塾也，並 糟由黏著層223固接於内引腳群2111與内引腳群仙之下表面，且曝露出魏 200847385 數個金J焊墊222，形成一 Lead on Chip (L〇c)之結構，著層⑵可以預先 貼附於導線架之内引卿群211ί與内引腳群2112之下表面或是先將黏著層如 貼附於晶片22之主動面上並曝露出複數個金屬焊墊垃，本發明並不加以限制。 ，外，本發明之黏著層223之目的在與導線架或是晶㈣成接合，因此，只要 ，具有此-德之黏著材料，均為本發明之實施錄，例如：雜_ 外接耆’使用打線製程（wire b_ing)，以複數條金屬導線224將晶片u 上的焊墊也與内引聊群則與内引腳群韻之上表面電性連接。 再接著，在晶片23之背面形成黏著層233，因此黏著層233可以是整個貼 =在晶月23之下表面，其也可以選擇將黏著層233分別貼附在晶片a之兩側 附近’然後，猎由黏著層233將晶片23固接於内引腳群2出及内引腳群如 之上絲。當黏著層233貼附在晶片23之兩側邊附近時，如第2圖所示，可藉 層233之厚度形成的空間’使連接於内引腳群2111與内引腳群2112二 金屬，線224不會接觸到晶片23之背面。而當黏著層233是整個貼附在晶片u 之下表面時’則可以使得金屬導線224被黏著層说所覆蓋。因此，黏著芦说 特別疋一種B-Stage樹脂，或黏著層23是一種膠膜。 在此要強調的是’黏著層233之厚度係次於黏著層223，例如黏著声说 介於50〜測mil，其目的在保護金屬導線议，以避免晶片U與内引腳 貝斗，造成晶片23之下表面與金屬導線224接觸，而造成短路或使金屬 :24斷裂。由於’晶片23之背面可以選擇性地配置一絕緣層咖，因此， ^曰片23之背面配置有絕緣層23〇時，即可進一步的保護金屬導線故。再接 者’=另一次的打線製程’以複數條金屬導線234將晶片Μ上的複數 说與導線架21之内引腳群2111與内引腳群2ii2電性連接其中 再以_個注模製程（咖㈣）所形成之屬導線 將曰曰片22晶片23以及導線架21之内引腳包覆，以完成封裝。 請繼續參考第3圖，係本發明之之多晶片堆疊封裝另一具體實施例 200847385 (月,、、、員地帛3圖與第2圖之結構完全相同，其差異係在第3圖的黏著層 233曰中，再進一步混合加入複數個間隔物238，藉由此間隔物238的高度來更確 保晶片23之下表面與不會與金屬導線⑽接觸，其中間隔物⑽可以是一種近 似球祕（ball spacer)，而此近似球狀物可以選擇具有彈性之高分子材料， ^行月曰&於帛3圖與第2圖之結構完全相同，故形成本實施例的詳細過 程不再贅述。 接著π再參考第4圖’係、本發明之多晶片堆疊封裝之再—具體實施例之 剖視圖。很明顯地’第4圖與第2圖之結構完全相同，其差異係在導線架Μ之 ，内引腳群2111與内引腳群助上形成一下置（do·)之結構，如第*圖所 、^内引腳群仙與内引腳群2112可藉由一衝壓（_ρ)製程形成一下置段 =3,2114,使得内引腳群則與内引腳物2與内引謂之間形成一個 同又。因此，當晶片22及晶片23與内引腳群加與内引腳群迎固 :以=降低整個封裝體的高度。同樣的，也可以在第4圖中的黏著層233中， 伴^入複數個間隔物238 ’如第5圖所示，藉由此間隔物说的高度來更確 :^baIlsp瞻），而此近似球狀物可以選擇具有彈性之高分子材料， 二心由於，第4圖與第5圖係第2圖與第3圖之 於上述過程中朗，故形成本實施例（第4圖與第$圖）眺細過料 咖顯示為第一種多晶片堆疊封裝方法步驟流程圖。首先’在步 有 内引腳211包括有稷數個平行之内引 ^⑴與嶋❸一‘間隔相:::：群^ 已形成於内引腳群2111與内引腳群2112 ^黏者潜223 面與導T之内引腳群2⑴與内引腳群 之主動面中央區域上的金屬焊墊222曝露，如步驟幻所示。再接著，如^ 9 200847385 所不’執订第-次金屬導線連接製程，將晶片a上的金屬焊墊η2愈導線架之 内引腳2U形成電性連接。然後，如步雜所示，提供另一晶片^，、並於晶片 23之背面塗布另-黏著層233 ’此黏著層233之厚度需大於黏著層223 ;此外， 黏著層说可以是整個貼附在晶片23之下表面，其也可以聊將黏著層加分 別貼附在；23之兩側邊附近。然後，將晶片23與導線架21之内引腳群迎 及内引腳群㈣之正面接合，因此當黏著層233是分別貼附在晶片Μ之兩側 邊附近時，則可藉由黏著層23S所形成的空間，以使連接晶片a與内引腳群仙 ，内引腳群2112之金屬導線234 *會接觸到晶片23之背面。若當黏著層说 整個貼附在晶片23之下表面時，則可以使得金屬導線224被黏著層说所覆 蓋如步驟65所示。再接著，進行第二次金屬導線之連接製程，其同樣是以打 線製程來執行，藉由複數條金屬導線234將晶片23上的複數個金屬焊塾⑽與 導線架之内引腳形211成電性連接，如步驟％所示。最後，如步驟67所示， 執行-封膠製程，將晶片22、晶片23以及導線架21之㈣腳211包覆，以完 成堆疊封裝。 S在上述過程中，可以在步驟64的黏著層233巾，再選擇性地混合複數個間 隔物238於其中，例如一種近似球狀物之間隔物。因此，即使當黏著層是 整個貼附在晶片23之下表面時，也可以確保被覆蓋的金屬導線224不會與晶片 、=之背面接觸。此外，晶片23之背面可以選擇性地配置一絕緣層23()，因此， 虽晶片23之背面配置有絕緣層23〇時，即可進一步的保護金屬導線224。 接著，請參考第7圖，係本發明之多晶片堆疊封裝方法之另一實施例之流 私囷首先，在導線架21之内引腳211的正面以及背面均各自貼附一黏著層， 此黏著層233可以是整個貼附在内引腳群2111及内引腳群2112之上表面，其也 可以選擇將黏著層233分別貼附在内引腳群2111及内引腳群2112之上表面之兩 側邊附近，其中貼附於内引腳2Π的正面的黏著層233之厚度大於貼附於内引 腳211的老面的黏著層223 ’如步驟71所示。接著，如步驟72所示，將一晶片 22之主動面與導線架21之内引腳群2111與内引腳群2112之背面固接，並使位 200847385 =晶片22之主動面中央區域上的金屬焊塾扣曝露。再接著，如步驟乃所示， =第-次金屬導線連接製程，將晶片22與導線架21之内引腳形2ιι成電性 =接。然後，將另-晶片23之背面藉由黏著層233固接於導線架Μ之内引腳 2111與内引腳群2112之正面。然後，藉由黏著層如將晶片η固接於内引 :群加及内引腳群⑽之上表面。當黏著層233貼附在内引腳群仙鱼内 =群2U2之兩侧邊附近時’可藉由黏著層说之厚度形成的空間，使連接於 内;|腳群2111與内引腳群2112上的金屬導線议不會接觸編23之背面。 而虽黏著層233是整個貼附在内引腳群加與内引腳群而之上表面時，則可 以使得金屬導線224被黏著層2S3所覆蓋，如步驟％所示。，如步驟Μ 二不，執行第二次金屬導線連接製程，將晶片23與導線架Μ之内引腳叫形 連接。最後如步驟76所示，執行一封膠製程，將晶片22及晶片幻以及 導線架21之内引腳群2iu與内引腳群2112包覆。 在上述過程中’可以在步驟71的黏著層233中，再選擇性地混合複數個間 2 於'、中例如一種近似球狀物之間隔物。因此，即使當黏著層233是 ^貼附在㈣腳群2出細丨卿2犯之上表面時，也可以確碰覆蓋的金 屬魏224不會與晶片23之背面接觸。此外，晶片23之背面可以選擇性地配 置一絕緣層230，因此，當晶片23之背面配置有絕緣層細時，即可進一步的 保護金屬導線224。 顯然地，依照上面實補中_述，本發明可能有許多的修正輕異。因 =需，在其附加的權利要求項之範_加以理解，除了上述詳細的描述外，本 選可以廣,乏地在其他的實施例巾施行。上述僅為本發明之較佳實施例而 曰，並非用以限疋本發明之申請專利範圍；例如，本發明不限於具有二堆疊式 :粒之，，而是可以顧至多個堆疊式晶粒之職，即本發明係可應用於所 j線谭接之封裝型式。此外，晶粒大小與步驟中之尺寸可加以變化以符合封 破日又十之要求。因此’應瞭解本發明不限於特定具體實施例，凡其它未脫離本 月斤揭示之精神下所完成的等效改變或修飾，均應包含在下述申請專利範圍 11 200847385 内0 【圖式簡單說明】 第la圖 係一習知多晶片堆疊封裝的剖視圖； 第lb圖 係另一習知多晶片堆疊封裝的剖視圖； 第lc圖 係再一習知多晶片堆疊封裝的剖視圖； 第2圖係依據本發明之一多晶片堆疊封裝結構之剖視圖； 第3圖係依據本發明之另一多晶片堆疊封裝結構之剖視圖； 第4圖係依據本發明之再一多晶片堆疊封裝結構之剖視圖； 第5圖係依據本發明之另一多晶片堆疊封裝結構之剖視圖； 第6圖係依據本發明之一多晶片堆疊封裝結構之方法流程圖；及 第7圖係依據本發明之另一多晶片堆疊封裝結構之方法流程圖。 【主要元件符號說明】 21 導線架 212 外引腳 2112 第二内引腳群 221 中央區域 223 黏著層 23 晶片 233 黏著層 238 球狀間隔物 211内引腳 2111 第一内引腳群 22 第一晶片 222金屬焊墊 224金屬導線 230絕緣層 234金屬導線 12

Claims (1)

  1. 200847385 十、申請專利範圍： 1· 一種多，片堆疊之封裝結構，包括： 一導線架，係由福金f 數個平行之第—内引腳、内引腳與複數個外引腳所構成，該内引腳包括有複 ‘内引腳群之末以^群與平行之第二㈣腳群，且該第—内引腳群與該第二 十 一間隔相對排列之； 一弟一晶片，該第_曰 墊，並夢由一第一裏—曰曰片之一主動面之接近中央區域配置有複數個金屬焊 且曝露出曰該複_金^=接於該第一内引聊群與該第二内引腳群之下表面， 墊，並葬由-楚★帛曰曰片之一主動面之接近中央區域配置有複數個金屬焊 及错由第二黏著層固接於該第一内引腳群與第二内引腳群之上表面；以 複數條金屬導線，用 該第-内引腳群與該第二内引腳群;—晶片及該第二晶片電性連接至該導線架之 層之=^_第—«層之厚度，並藉由該第二黏著 内引腳群之金屬導料無第—㈣崎與該第二 3· ° 材料。 σ /、中《亥弟一黏著層為一膠膜（paste) =個=㈣3柄叙物構，《卿她中混合有 :大物如申請專利範圍第4項所述之封装結構，其中該複數個間隔物為 =如申請專利範圍第i項所述之封裝結構，其中該第二黏著層為一祕峨材 專利範圍第6項所述之封觀構，其中該⑽哪材料中混合有複數 13 200847385 其中該複數個間隔物為一種近似球 8·如申請專利範圍第7項所述之封裝結構， 狀物。 二黏著層之厚度大於該第 二黏著層之厚度大於該金 9·如申請專利範圍第1項所述之封裝結構，其中該第 一黏著層。 10·如申請專利範圍第1項所述之封裝結構，其中該第 屬導線高度 11.一種多晶片堆疊之封裝結構，包括： -導線架’係由複數個㈣哺複數個外⑽所構成，該㈣腳包括有複 ，數個平行之第-㈣腳群與平行之第二㈣腳群，且該第—㈣腳群與該第二 内引腳群之末端係以-間隔相對排列之，且該複數個内引腳具有一高度差； 該第―晶片之—主動面之接近中央區域配置有複數^金屬焊 墊，並猎由-第-黏著層固接於該第一内引腳群與該帛二内引腳群之下表面， 且曝露出該複數個金屬焊墊； 第4 4第—狀_主動面之接近巾央區域配置有複數個金屬焊 及 塾，並猎由-第二黏著層固接於該第一内引腳群與第二内引腳群之上表面；以 複數條金屬導線，用以將該篦_ s Η β — 該第-㈣卿_第二内1群4及相二晶片紐連接至該導線架之 声之ί二;層之厚度大於該第一黏著層之厚度’並藉由該第二黏著 =尽度軸-空間，而該㈣使連接該第—晶片與該第—内引腳群與該第二 内引腳群之金屬導線不接觸該第二晶片之一背面。 13如利補第U項所述之封裝結構，其中該第一黏著層為一膠帶。 利範圍第11項所述之封裝結構，其找第二《層為一膠膜 14·如申請專利範圍第 有複數個間隔物。 Π項所述之封裝結構，其中該膠膜（paste)材料中混合 200847385 15·如申請專利範圍第14項所述之封裝結構，其中該複數侧隔物為一 球狀物。 •如申請細_ u項所述之封裝結構，其中該第二黏著層為一 材料。 17·如申明專利範圍第π項所述之封裝結構，盆 數個間隔物。 ' ^ 種近似 B-Stage B-Stage材料中混合有複 ϋ申請專概_ 17猶狀封麵構，其中該複數朗隔物為—種近似 球狀物。 =申u _狀咖構，其巾離_之厚度 第一黏者層。 範圍第11項所述之封裝結構，其中該第二黏著層之厚度大於該 21· —種多晶片堆疊之封裝方法，包括·· 提供-導線架’係由複數個内引腳與複數個外引腳所構成，該内引腳包括 =砰㈣-㈣_平行n 5叫且該第腳群與該 弟一内引腳群之末端係以一間隔祖對排列； .形成-第-黏著層於該導線架之該第—㈣腳群與該第二内引腳群之背 面， 、固接一第一晶片於該導線架之該第一内引腳群與該第二内引腳群之背面， 並使位於該第一晶片之主動面中央區域上的金屬焊墊曝露； 執行第-次金屬導線連接製程，將該第-晶片與該導線架之内引腳形成電 性連接； k供一弟一晶片，並於該第二晶片之背面形成一第二黏著層，其中兮第一 黏著層之厚度大於該第一黏著層之厚度； 人 固接該第二晶片於該導線架之該第一内引腳群與該第二内引腳群之正面，藉由 該第二黏著層所形成一空間，以使連接該第一晶片與該第一内引腳群與該^二 15 200847385 内引腳群之金屬導線不接觸該第二晶片之一背面； 執行第二次金屬導線連接製程，將該第二晶片與該導線架之㈣腳形 性連接；以及 執行-封膠製程’將該第一晶片及該第二晶片以及該導線架之該第一 腳群與該第二内引腳群包覆。 22·如申請專利範圍帛21項所述之封裝方法，其中該第二黏著層中混合有複數 個球狀間隔物（ball spacer)。 23·如申請專利範圍帛Μ χ員所述之封裝方法，其中該第二黏著層之厚度大於該 該金屬導線高度。 、μ 4.如申明專利範圍第21項所述之封裝方法，其中該且導線架之該複數 腳具有一高度差。 25· —種多晶片堆疊之封裝方法，包括： 、—提供一導線架，係由複數個内引腳與複數個外引腳所構成，該内引腳包括 ^腹數個平行之第—内引腳群與平行之第二㈣腳群，且該第-㈣腳群與該 第二内引腳群之末端係以—間隔相對排列； •形成一第一黏著層於該導線架之該第一内引腳群與該第二内引腳群之背 面； 形成一第二黏著層於該導線架之該第一内引腳群與該第二内引腳群之正 面，其中該第二黏著層之厚度大於該第一黏著層之厚度； 、固接一第一晶片於該導線架之該第-内引腳群與該第二内引腳群之背面， 並使位於該第-晶片之主動面中央區域上的金屬焊墊曝露； ，行第_次金屬導線連接製程，將該第—晶片與該導線架之内引腳形成電 性遷接， “固接-第二晶片於該導線架之該第一内引腳群與該第二内引腳群之正面， ^由^第二黏著層所形成—空間，以使連接該第-晶片與該第-内引腳群與該 一弓丨腳群之金屬導線不接觸該第二晶片之一背面； 200847385 斯第二次麵祕連接製程， 性連接；以及 將該第二晶片與該導線架之内引腳形成電 二晶片以及該導線架之該第一内引 其中遠第二點著層中混合有複數 執行-封膠製程，將該第一晶片及★亥第 腳群與該第二内引腳群包覆。 X 26_如申請專利範圍第25項所述之封襞方法 個球狀間隔物（ball spacer )。 其中該第二轉層之厚度大於該 27·如申請專利範圍第25項所述之封裝方法， 金屬導線高度。 線架之該複數個内引 28.如申請專利範圍第25項所述之封裝方法，其中該且導 腳具有一高度差。 17
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Publication number Priority date Publication date Assignee Title
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