200842491 94082 22054twfdoc/n 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種圖案化製程與光罩的製作方 法，且特別是有關於一種可避免因疊對偏移（〇verlay tolerance)而造成對準失誤(mis-aiignment)的圖案化製程與 無鉻相移式微影(chrome-less phase lithography，CPL)光罩 的製作方法。 【先前技術】 半導體製程中，舉凡各膜層的圖案化或者是摻質的區 域’都是由微影製程來決定的。微影製程是先在半導體晶 片表面上形成一層光阻材料層。然後，進行曝光及顯影步 驟’以將光罩上的圖案轉移至晶片上的光阻材料層，使光 阻材料層的圖案與光罩相同。因此，光罩品質的好壞將直 接影響到半導體製程之優劣。 雖然光罩已在半導體製程中廣泛地被應用，但隨著元 件尺寸的縮小，光罩上圖案的開口、線寬之尺寸亦跟著縮 小。受限於曝光光源的波長，如果光罩上遮蔽層的間隔距 離太近，會使得通過光罩的光束在晶片表面上所造成較大 的繞射效應，影響了光阻的曝光均勻度而使解析度變差。 在此種狀况下’相移式光罩(phase shift mask，PSM)微影技 術已漸漸應用在實際製程中，以提高微影製程的解析度。 在目箣的半導體製程中，無鉻相移式光罩則為較常使用的 相移式光罩之一。 圖1A至圖1D為習知無鉻相移式光罩之製作流程剖面 200842491 94082 22054twldoc/n 圖。圖IE為機台的誤差造成對準失誤的示意圖。請參照 圖1A，首先提供平坦且透明之基板1〇〇，基板1〇〇 一般為 石英基板。接著，在基板1〇〇上方形成遮蔽層1〇2。遮蔽 層102—般為鉻膜或其他金屬遮蔽材料。然後，在遮蔽層 102上形成圖案化光阻層1〇4。 之後，請參照圖1B，以圖案化光阻層1〇4為罩幕，進 行乾式蝕刻製程，移除被圖案化光阻層1〇4所暴露出的遮 蔽層102，以形成圖案化遮蔽層1〇2，。繼之，同樣以圖案 化光阻層104為罩幕，進行敍刻製程，移除被圖案化光阻 層104所恭露出的部分基板1〇〇，而在基板1〇〇中形成開 接著，请苓照圖1C，將圖案化光阻層1〇4移除。之後， 在基板100上形成圖案化光阻層1()6。圖案化光阻層廳 暴露出欲移除的部分圖案化遮蔽層1〇2，。200842491 94082 22054twfdoc/n IX. Description of the Invention: [Technical Field] The present invention relates to a method for fabricating a patterning process and a reticle, and more particularly to avoiding offset due to stacking (〇verlay tolerance A method of creating a mis-aiignment patterning process and a chrome-less phase lithography (CPL) reticle. [Prior Art] In the semiconductor process, the patterning or the doping region of each film layer is determined by the lithography process. The lithography process first forms a layer of photoresist on the surface of the semiconductor wafer. Then, an exposure and development step is performed to transfer the pattern on the photomask to the photoresist layer on the wafer such that the pattern of the photoresist layer is the same as that of the mask. Therefore, the quality of the mask will directly affect the quality of the semiconductor process. Although the photomask has been widely used in semiconductor manufacturing, as the size of the device is reduced, the size of the opening and line width of the pattern on the photomask is also reduced. Limited by the wavelength of the exposure light source, if the distance between the shielding layers on the reticle is too close, the light beam passing through the reticle will cause a large diffraction effect on the surface of the wafer, which affects the uniformity of exposure of the photoresist. The resolution is getting worse. Under such conditions, phase shift mask (PSM) lithography has been gradually applied in practical processes to improve the resolution of lithography processes. In the semiconductor process that has been witnessed, the chrome-free phase-shifting reticle is one of the more commonly used phase-shifting reticle. 1A to 1D are cross-sections of a fabrication process of a conventional chromium-free phase shift mask. 200842491 94082 22054twldoc/n. Figure IE is a schematic diagram of the misalignment caused by the error of the machine. Referring to Fig. 1A, a flat and transparent substrate 1 is first provided, and the substrate 1 is generally a quartz substrate. Next, a shielding layer 1〇2 is formed over the substrate 1A. The masking layer 102 is typically a chrome film or other metallic masking material. Then, a patterned photoresist layer 1〇4 is formed on the shielding layer 102. Then, referring to FIG. 1B, the patterned photoresist layer 1〇4 is used as a mask to perform a dry etching process to remove the shielding layer 102 exposed by the patterned photoresist layer 1〇4 to form a patterned shielding layer. 1〇2,. Then, the patterned photoresist layer 104 is used as a mask to perform a marking process to remove a portion of the substrate 1 恭 which is exposed by the patterned photoresist layer 104, and is formed in the substrate 1 开. Please remove the patterned photoresist layer 1〇4 as shown in FIG. 1C. Thereafter, a patterned photoresist layer 1 (6) is formed on the substrate 100. The patterned photoresist layer exposes a portion of the patterned masking layer 1〇2 to be removed.
隨之，請參照圖1D，利用圖案化光阻層鹰為罩幕， ==亥:製程’將圖案化光阻層1〇6所暴露的圖案化 之後，將圖案化光阻層106移除，即可Then, referring to FIG. 1D, the patterned photoresist layer 106 is removed by using the patterned photoresist layer as a mask, and the pattern is exposed by the patterning photoresist layer 1〇6. , you can
元成然鉻相移式光罩的製作。 I J 所異ίϋ的無鉻相移式光罩中，藉由圖案化遮蔽層102, 片進行曝光步驟時m 叙况’在後續對晶 所暴露的基板100而產生相Μ =木化《蚊層收， 度。 位差，以拎尚微影製程的解析 然而’在製作光罩的過程中，製程機台中存在的誤差 200842491 94082 22054twfd〇c/T1 !ι1：〇ΓΓ e )例如，电子束描繪機台JBX3030的最大聶料低 Ϊ即在使用此種型號機台對先罩上ΐ同層 層進竹圖案寫入時’圖案對準上的誤差在4〇腿以 詳細地說，在圖m中，形成圖案化光阻層1〇 由Μ對偏移而造鑛準失誤，目此使得進顿卿程之 相移層的基板1GG上仍有部分圖案化遮蔽層搬， 此，當半導體製程技術愈來愈精進後，如何解 製f相光罩時會遭遇__題以提升微影 衣私良干，疋目丽製程所要面對的重要課題之一。 【發明内容】 方、ΛΙΓί，本發明的目的就是在提供—種光罩的製作 〆本於m程巾能_免因機台誤差喊賴準失誤。 本餐明的另一目的是提供一種圖案化製程 衣程中因疊對偏移所造成的對準失誤。 匕。 本發明提出一種光罩的製作方法， ί第提遮蔽層之基板。而後，上 成弟一圖案化光阻層。_，移除部 形成圖案化遮蔽層與開口，其中圖案化二 出二第圖案:t阻層。第二圖案化光阻』 4^出^刀，並至少暴露出第二部分旁的部分開 口而弟一圖案化光阻層所暴露的區域至少大於第二部分 200842491 ^4U»z zzuo4twf.d〇c/n 之見度與第一圖案化光阻層以及第二圖案化光阻層之間的 最大豐對偏移量(overlay tolerance)之二倍的總和。之後， 依序移除第二部分及第二圖案化光阻層。 斤依照本發明實施例所述之光罩的製作方法，上述之移 除第二部分的方法例如是乾式蝕刻製程。 ，知、本發明實施例所述之光罩的製作方法，其中圖案 化遮蔽層與開口的形成方法例如是以圖案化光阻層為罩 幕’移除部分的遮蔽層，而形成圖案化遮蔽層。然後，以 第一圖案化光阻層為罩幕，移除部分的基板。 依照本發明實施例所述之光罩的製作方法，上述之基 板的材料例如是石英，而遮蔽層的材料例如是鉻。 本發明另提出一種圖案化製程，包括下列步驟：首先 於基底上形成材料層，材料層的材料例如是⑽速率 (etchmg rate)大於基底的钮刻速率之材料。接著，於基底上 形成第-圖案化光阻層。_，移除部分的材料層與基底， =匕圖案化，與開口’而所形成的圖案化材料層具 =t與第"7部分。繼之，移除第―圖案化光阻層。 底上喊第二®案化級層。第二圖案化光阻 弟-部分以及暴露出第二部分，並至少暴露出第二 =1部分開口，而第二圖案化光阻層所暴露的區域至 二#於:—心之見度與第―®案化光阻層以及第二圖案 之:㈣最大疊對偏移量之二倍的總和。隨之，依 序移除弟一P刀以及第二圖案化光阻層。 依照本發明實施例所述之圖案化製程，上述之第二圖 200842491 y^u6z ^uD4tw£doc/n rt阻心㈣如是在基底场成絲材料層 i至==與步驟’以移除第二部分與第二部分旁 0主夕邻分開口上的光阻材料層。 依照本發明實施例所述之圖案化製程，上 3層=的形成方法例如是以第-圖案化光阻層為 第一圖分的材料層’形成圖案化材料層。之後，以 圖案化光阻層為罩幕，移除部分的基底。 所暴製作光罩的触巾’由於第二_化光阻層 層i二心ί至少Α於欲移除的遮蔽層之寬度與兩光阻 ;安二圹二璺對偏移量之二倍的總和’因此在移除部分 致解失誤的情形發生，且在機台誤差的存在下 仍可以料地將所需的随化遮蔽層移除。 因嫵ϋί地’以上述方法進行圖案化製程時，也能夠避免 士口以成的對準失誤而影響圖案化製程的精確度。 為讓本發明之上述和其他目的、舰和優點能更明顯 重’下文特舉實施例’並配合所附0式，細說明如 Γ ° 【實施方式】 圖2A至圖2D為依照本發明實施例所緣示之圖案化製 程的流程剖面圖。 ^ 八Φ百先，請參照圖2A，提供基底200，基底200例如是 ^总層、、矽基底或其他半導體基底。然後，在基底200上 形成材料層202以及圖案化光阻層2〇4。材料層2〇2 9 200842491 zzuj4twf.doc/n 5蝕於基底200的蝕刻速率。圖案化光阻層204 成方法為此領域中具有通常知識者所熟知，於此不再 一射然ΐ 1請參照圖2β ’以圖案化光阻層204為罩幕，進 i 移除未被圖案化光阻層204所覆蓋的材料層 分：第Γ部分_以及第二部分職。二Li 而二，，後續的製程中，保留的部分為第—部分施， 204 中形成開口 i將部分基底細移除，以於基底 於其請參照圖2C，將圖案化光阻層204移除。接著， 氐〇〇上形成光阻材料層（未繪示）。之後，對光阻材 圖案二^ Γ〇Γ開口 206曰上的光阻材料層移除，而形成 出的區域圖，光阻層雇所暴露 2〇4和0* ; 一施之寬度與圖案化光阻層 的始和=光阻層208之間的最大疊對偏移量d之二倍 定;同對偏移則會因所使用的機台以及設 ^細輕，當機台被設定成形成 :=案__’且有發生疊對偏移的情況H吏 無法完全暴露出來。因此，當機台被設定 /成暴路出大於第二部分鳩之寬度的區域圖案化光 200842491 z,z,uj4twf.doc/n 阻層208，且此區域也大於第二部分2〇2b之寬度盥最大& 對偏移量d之二倍的總和，即使在疊對偏移最嚴重的情= 下，例如向左偏移量為最大疊對偏移量d， 量為最大叠對偏移量d，第二部分2娜仍可=== 案化光阻層208暴露出來。 此外，在其他實施例中，被圖案化光阻層2〇8所暴霖 出的範圍也可以是整個開π 2 〇 6的區域，亦阻 層208僅覆蓋第一部分202ae 之後，請參照圖2D，以圖案化光阻層2〇8為罩幕，進 行I虫刻製程，以移除第二部分202b。進行钱刻製程時，由 於圖案化材料層202,的侧速率大於基底的姓刻速 率’因此能夠只移除第二部分繼b而不會移除開口 2〇6 底部的基板200，避免對開口施之深度造成影響。隨後， 將圖案化光阻層208移除，即完成本發明之圖案化製程。 以下將利用上述的圖案化製程來製作微影製程中所使 用的光罩。 圖3A至圖3D為依照本發明實施例所繪示之 作流程剖面圖。 几早日7衣 I先’請參照®| 3A，提供平坦且透光之基板3〇〇，λ 板300材料例如是石英或是其他基板材料。然後，在基二 3〇〇上方依序形成不透光之遮蔽層搬以及圖案化光阻層 3〇4。遮蔽層3〇2所使用的材料例如是鉻或其他合適之遮^ 材料:遮蔽層302形成方法例如是化學氣相沈積法、濺鍍 法或疋其他合適之形成方式。圖案化光阻層3〇4的形成步 11 200842491 94U82 zzu^4twf.doc/n 驟例如是依序進行光阻覆蓋、軟烤、寫入、洪烤以 等步驟’詳細的過程為此領域中具有通常知識者所熟知了 於此不再贅述。 然後，請苓照圖3B，以圖翁化光阻層3〇4為罩幕 如進行乾式蝕刻製程，移除未被圖案化光阻層3〇4所罢 的遮蔽層302,以形成圖案化遮蔽層搬，。圖案化遮蔽: 302,包含兩個部分：第一部分孤與第二部分观 樣地，在後續的製程中’保留的部分為第一部分孙仏， tfrri為第二部分3G2b。接著，同樣以圖案化光阻層 為罩幕’進行侧製程，將部分基板3⑽移除，以二 基板300中形成開口 3〇6。 ； ，請參照®3C ’將®案化光阻層3G4移除。接著， =擇性地進行清洗步驟，以移除圖案化遮蔽層搬，表面 火粒及其他沈積物。然後，在基板3⑻上方形朗案 =3〇8。圖案化光阻層遞的形成方法，例如對光^ 乡除的絲材料層之範圍包含位於第二部分302b ”弟一部分302b旁的至少部分開口 3〇6中的光阻 的圖案化光阻層遍的形成方法對於本領域中且 成^ 識者而言’應能不需花費額外的勞動而可輕易達 暴述’圖案化光阻層駕覆蓋住第—部分地&，且 部分遍’並至少暴露出第二部分旁鳩.旁 々心開口 306。此外，圖案化光阻層规 12 200842491 ^^v^4twf.doc/n 304和圖案化=寬度與圖案化光阻層 之二倍的總和，且=田成的最大疊對偏移量d Γ:Τ有所差異:因心=== 案化光阻層^部分3陶可以完全地被圖 步‘例^兒’當使用電子束描1 會機台職·進行寫入 之後 移除圖案化光阻除 =二部分3〇2b而不會 開口 306的、菜庚、〇、暴出的基板300，因而不會對 除，成本;=|:。’將圖案化光阻層3。8移 化光:出明之圖案化製程中，所形成的圖案 層二= 的材料層。、準產生决差’進而避免無法完全移除所需 13 200842491 ‘ ^^4twf.doc/n 另方面本發明在光罩的製造過程中移除所需的遮 蔽層時，藉由使圖案化光阻層所暴露出的區域至^於欲 移除的遮蔽層之寬度與機台所造的成最大疊對偏移量之二 ，的總和’因此在㈣偏移最嚴重的情況下，欲移除的遮 叙曰仍;、、'、可以凡王地被暴露出來，有效地解決了因機台誤 差所引起疊對偏移的問題。 雖然本發明已以實施例揭露如上，然其並非用以限定 春^明、:任何熟習此技藝者，在不脫離本發明之精神和範 合内田可作些許之更動與潤飾，因此本發明之保護範圍 备視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖认至® id為g知無鉻相移式光罩之製作流程剖面 圖〇 圖1E為機台的疊對偏移造成對準失誤的示意圖。 圖2A至圖2D為依照本發明實施例所繪示之圖案】 程的流程剖面圖。 〃、 圖3A至圖3D為依照本發明實施例所繪示之光罩的 作流程剖面圖。 ^ 【主要元件符號說明】 100、300 :基板 102、302:遮蔽層 102’、302’ ··圖案化遮蔽層 104、106、106’、204、208、304、308 :圖案化光阻 14 200842491 94082 22054twf.doc/n 200 :基底 202 :材料層 202’ ：圖案化材料層 202a、302a :第一部分 202b、302b :第二部分 206、306 :開口 d:最大疊對偏移量Yuan Chengran chrome phase shift mask production. In the IJ-different chrome-free phase-shifting reticle, by patterning the masking layer 102, when the sheet is subjected to the exposure step, it is described in the subsequent substrate 100 exposed to the crystal. Receive, degree. The difference is the resolution of the lithography process. However, in the process of making the reticle, the error in the process machine is 200842491 94082 22054twfd〇c/T1 !ι1:〇ΓΓ e ) For example, the electron beam drawing machine JBX3030 The maximum Nie material is low, that is, when using this type of machine to write the same pattern on the first cover, the pattern alignment error is 4 feet. In detail, in Figure m, the pattern is formed. The photoresist layer 1 has a quasi-missing error due to the offset of the crucible, so that there is still a part of the patterned mask layer on the substrate 1GG of the phase shift layer of Jindengqing, which is becoming more and more semiconductor process technology. After the advancement, how to solve the f-phase reticle will encounter __ questions to enhance the micro-shadow clothes, and one of the important topics to be faced in the process. SUMMARY OF THE INVENTION The purpose of the present invention is to provide a kind of reticle manufacturing 〆 于 于 m m m m m m m m m m m 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Another purpose of this meal is to provide an alignment error in the patterning process due to the offset of the stack. dagger. The invention provides a method for fabricating a photomask, and a substrate for the shielding layer. Then, on the younger brother, a patterned photoresist layer. _, the removing portion forms a patterned shielding layer and an opening, wherein the patterned second pattern: t resist layer. The second patterned photoresist 4^ exits the knife and exposes at least a portion of the opening next to the second portion, and the area exposed by the patterned photoresist layer is at least larger than the second portion 200842491 ^4U»z zzuo4twf.d〇 The sum of the c/n visibility is twice the maximum overlap tolerance between the first patterned photoresist layer and the second patterned photoresist layer. Thereafter, the second portion and the second patterned photoresist layer are sequentially removed. According to the manufacturing method of the reticle according to the embodiment of the invention, the method for removing the second portion is, for example, a dry etching process. The method for fabricating a reticle according to the embodiment of the present invention, wherein the method for forming the patterned shielding layer and the opening is, for example, using a patterned photoresist layer as a masking layer for removing a portion of the mask to form a patterned mask. Floor. Then, the first patterned photoresist layer is used as a mask to remove a portion of the substrate. According to the manufacturing method of the reticle according to the embodiment of the invention, the material of the substrate is, for example, quartz, and the material of the shielding layer is, for example, chromium. The present invention further provides a patterning process comprising the steps of first forming a layer of material on a substrate, such as a material having a (10) etchmg rate greater than the button engraving rate of the substrate. Next, a first patterned photoresist layer is formed on the substrate. _, removing a portion of the material layer from the substrate, =匕 patterning, and forming the patterned material layer with the opening' Following this, the first patterned photoresist layer is removed. At the bottom, the second level of the case is called. The second patterned photoresist-part and exposes the second portion and exposes at least the second=1 partial opening, and the second patterned photoresist layer exposes the area to the second #::--- The first - the case of the photoresist layer and the second pattern: (4) the sum of the two times the maximum overlap offset. Accordingly, the P-knife and the second patterned photoresist layer are sequentially removed. According to the patterning process of the embodiment of the present invention, the second figure 200842491 y^u6z ^uD4tw£doc/n rt is (in the case of the base field silk material layer i to == and the step 'to remove the first The second portion is adjacent to the second portion of the photoresist layer on the opening of the main gate. According to the patterning process of the embodiment of the present invention, the formation method of the upper layer = for example, the layer of the patterned material is formed by the material layer ' having the first patterned photoresist layer as the first layer. Thereafter, the patterned photoresist layer is used as a mask to remove portions of the substrate. The contact lens of the reticle is made to be erected by the width of the shielding layer to be removed and the two photoresists; the second offset of the second layer is twice the offset The sum of the sums thus occurs in the case of removal of partial missolving errors, and the desired compliant masking layer can still be removed in the presence of machine errors. When the patterning process is performed by the above method, it is also possible to avoid the misalignment caused by the crater and affect the accuracy of the patterning process. In order to make the above and other objects, ships and advantages of the present invention more apparent, the following specific embodiments, and in conjunction with the following formula 0, are described in detail. [Embodiment] FIGS. 2A to 2D are implemented in accordance with the present invention. A cross-sectional view of the process of the patterning process. ^ 八百百先, please refer to FIG. 2A, a substrate 200 is provided, such as a total layer, a germanium substrate or other semiconductor substrate. Then, a material layer 202 and a patterned photoresist layer 2〇4 are formed on the substrate 200. The material layer 2 〇 2 9 200842491 zzuj4twf.doc / n 5 etch rate of the substrate 200. The method of patterning the photoresist layer 204 is well known to those of ordinary skill in the art, and is no longer a shot. 1 Please refer to FIG. 2β' to pattern the photoresist layer 204 as a mask, and remove the The layer of material covered by the patterned photoresist layer 204 is divided into a third part and a second part. Two Li and two, in the subsequent process, the remaining portion is the first portion, and the opening i is formed in the 204 to remove a portion of the substrate, so that the substrate is removed, and the patterned photoresist layer 204 is moved as shown in FIG. 2C. except. Next, a photoresist layer (not shown) is formed on the crucible. Thereafter, the photoresist layer on the photoresist pattern 220 is removed, and the area map is formed, and the photoresist layer is exposed by 2〇4 and 0*; a width and pattern are applied. The maximum overlap offset d between the start of the photoresist layer and the photoresist layer 208 is twice; the same offset is caused by the machine used and the lightness of the device. Formation: = Case __' and there is a case where a pairwise offset occurs. H吏 cannot be completely exposed. Therefore, when the machine is set/expanded, the area patterned light 200842491 z, z, uj4twf.doc/n resist layer 208 is larger than the width of the second portion, and this area is also larger than the second part 2〇2b. Width 盥 max & the sum of two times the offset d, even in the case of the most severe overlap offset, such as the left offset is the maximum overlap offset d, the maximum overlap The displacement d, the second portion 2 Na can still === The patterned photoresist layer 208 is exposed. In addition, in other embodiments, the range of the patterned photoresist layer 2〇8 may also be the entire area of π 2 〇6, and after the resist layer 208 covers only the first part 202ae, please refer to FIG. 2D. With the patterned photoresist layer 2〇8 as a mask, an I-etch process is performed to remove the second portion 202b. When the engraving process is performed, since the side rate of the patterned material layer 202 is greater than the substrate surname rate, it is therefore possible to remove only the second portion subsequent to b without removing the substrate 200 at the bottom of the opening 2〇6, avoiding the opening. The depth of the application has an impact. Subsequently, the patterned photoresist layer 208 is removed, ie, the patterning process of the present invention is completed. The reticle used in the lithography process will be fabricated by the above-described patterning process. 3A through 3D are cross-sectional views showing processes in accordance with an embodiment of the present invention. A few days later, I first 'please refer to ®| 3A to provide a flat and transparent substrate 3 〇〇. The λ plate 300 material is, for example, quartz or other substrate material. Then, an opaque shielding layer and a patterned photoresist layer 3〇4 are sequentially formed over the base 2 〇〇. The material used for the masking layer 3 is, for example, chromium or other suitable material: the masking layer 302 is formed by, for example, chemical vapor deposition, sputtering or other suitable formation. Step 11 of patterning the photoresist layer 3〇4 200842491 94U82 zzu^4twf.doc/n Steps are, for example, performing photoresist coating, soft baking, writing, flooding, etc. Steps of detailed process in this field Those of ordinary skill in the art are familiar with this and will not be described again. Then, referring to FIG. 3B, the photoresist layer 3 is used as a mask to perform a dry etching process, and the shielding layer 302 not patterned by the photoresist layer 3〇4 is removed to form a patterned shielding layer. move,. Patterned masking: 302, consisting of two parts: the first part is isolated and the second part is observed. In the subsequent process, the reserved part is the first part of the grandson, and the tfrri is the second part of the 3G2b. Next, a side process is also performed with the patterned photoresist layer as a mask, and a portion of the substrate 3 (10) is removed to form openings 3?6 in the two substrates 300. ; , please refer to ®3C ' to remove the case photoresist layer 3G4. Next, the cleaning step is selectively performed to remove the patterned masking layer, surface fire particles and other deposits. Then, on the substrate 3 (8), the square case = 3 〇 8. A method of forming a patterned photoresist layer, such as a patterned photoresist layer comprising a photoresist in at least a portion of the opening 3〇6 of the second portion 302b adjacent to the portion 302b of the second portion 302b. The method of forming the pass is for the person in the art and the person skilled in the art should be able to easily reach the violent 'patterned photoresist layer to cover the part-and-and-and-partially without any extra labor. At least a second portion of the side opening. The side opening 306 is exposed. Further, the patterned photoresist layer 12 200842491 ^^v^4twf.doc/n 304 and the patterning = width and the sum of the patterned photoresist layers are doubled. And = Tiancheng's maximum overlap offset d Γ: Τ is different: due to heart === cased photoresist layer ^ part 3 pottery can be completely used as the example 'example ^ children' when using electron beam drawing 1 The machine will perform the post-write, remove the patterned photoresist, remove the two parts, 3〇2b, and do not open the 306, the vegetable, the 〇, the violent substrate 300, and thus will not be removed, the cost; |:. 'The patterned photoresist layer 3. 8 is transferred to light: in the patterning process of the Ming, the layer of material formed by the patterned layer 2 = , to produce a final 'to avoid the inability to completely remove the need 13 200842491 ' ^^4twf.doc / n Another aspect of the invention is to remove the desired shielding layer during the manufacture of the reticle by patterning the light The sum of the area exposed by the resist layer to the width of the mask layer to be removed is the sum of the maximum overlap of the machine, and thus the sum of the offset of the (four) offset is the most severe The obscuration is still;;, ', can be exposed to the king, effectively solving the problem of stack offset caused by machine error. Although the invention has been disclosed above by way of example, it is not used 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 [Simple description of the drawing] Fig. 1E shows the manufacturing process cross-section of the chrome-free phase-shifting reticle. Figure 1E is a schematic diagram of the misalignment of the stack offset of the machine. Figure 2A to Figure 2D The flow of the pattern according to the embodiment of the present invention 3A to 3D are cross-sectional views showing a process of a reticle according to an embodiment of the present invention. ^ [Description of main components] 100, 300: substrate 102, 302: shielding layers 102', 302 Patterned masking layers 104, 106, 106', 204, 208, 304, 308: patterned photoresist 14 200842491 94082 22054twf.doc/n 200: substrate 202: material layer 202': patterned material layer 202a, 302a: first portion 202b, 302b: second portion 206, 306: opening d: maximum overlap offset
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