200841996 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種拋光墊（Polishing Pad)平整器以及 其製造方法，且特別是有關於一種運用於化學機械研磨製程 的拋光墊平整器以及其製造方法。 【先前技術】 由於化學機械研磨製程可對被研磨表面提供良好的均 勻性、控制性、及表面平坦度，因而廣為應用於次微米及深 次微米的半導體製程之中，更成為超大型積體電路（ultra large scale integrated circuit; ULSI)製程最為重要的平坦化製 程。也是目前半導體製程應用最為頻繁的之一。 化學機械研磨技術（chemical-mechanical polishing; CMP)，係在被研磨表面與拋光墊（Polishing Pad)之間，力口入 可與被研磨表面之材質產生反應的溶液、和具研磨作用的研 磨顆粒所組成的研磨液（slurry;或稱研漿），並使被研磨表面 相對於拋光墊進行相對運動，藉以同時對被研磨表面產生化 學性及物理性的去除作用。 由於化學機械研磨品質的關鍵在於，研磨顆粒於拋光墊 中分佈的均勻性。習知技術通常藉由形成於拋光墊表面的纖 維組織或孔隙來有效附著研磨顆粒以增加磨擦力的結構。然 而經過長時間操作之後，拋光墊表面會堆積來自被研磨表 面、研磨液或研磨器械的碎片，而出現硬化和平滑等現象， 使拋光墊表面不能有效附著研漿中的研磨顆粒，進而降低研 6 200841996 磨效果。因此必須藉由拋光墊平整器例如以鑽石碟片對拋光 墊進行「梳洗」或「削切」等起始化（Initialization)或粗操化 的處理，移除拋光墊表面的積垢，還原拋光墊表面的纖維組 織或孔隙。 • 然而，習知的鑽石碟片為電鍍鑽石碟片，其結構係將鑽 . 分散於碟片基材上，再電鍍一層鎳金屬層將碎鑽黏附於基材 上’因此存在有鑽石脫落的問題。當對撤光墊進行起始化或 粗糙化的處理時脫落的鑽石顆粒，會嚴重刮傷後續拋光製程 • 中的被研磨表面（半導體晶圓）。。 由於拋光墊平整器的良窳會直接影響化學研磨製程，以 及被研磨之半導體晶圓的品質，因此有需要提供一種耐磨耗 且不易使產生碎屑影響拋光墊之研磨製程的拋光墊平整器 以其製作方法。 ^ 【發明内容】 、，本發明的目的就是在提供一種拋光墊平整器，此拋光墊 平整器包括：圖案化基材以及硬膜層。其中圖案化基材具有 安複數個大出所形成的立體圖案。硬膜層則共形於立體圖 木之上，且其硬度實質大於15砷&。200841996 IX. Description of the Invention: [Technical Field] The present invention relates to a polishing pad flattener and a method of manufacturing the same, and more particularly to a polishing pad conditioner for use in a chemical mechanical polishing process and Its manufacturing method. [Prior Art] Since the chemical mechanical polishing process can provide good uniformity, controllability, and surface flatness to the surface to be polished, it is widely used in sub-micron and deep-micron semiconductor processes, and becomes a very large product. The most important flattening process for the ultra large scale integrated circuit (ULSI) process. It is also one of the most frequently used semiconductor process applications. Chemical-mechanical polishing (CMP), between the surface to be polished and the polishing pad, a solution that reacts with the material of the surface to be polished, and abrasive particles with abrasive action. The slurry (slurry; or slurry) is formed, and the surface to be polished is relatively moved relative to the polishing pad, thereby simultaneously removing chemical and physical effects on the surface to be polished. The key to the quality of chemical mechanical polishing is the uniformity of the distribution of abrasive particles in the polishing pad. Conventional techniques generally adhere to abrasive particles by a fibrous structure or pore formed on the surface of the polishing pad to increase the frictional force. However, after a long period of operation, the surface of the polishing pad will accumulate debris from the surface to be polished, the polishing liquid or the grinding device, and hardening and smoothing will occur, so that the surface of the polishing pad cannot be effectively adhered to the abrasive particles in the slurry, thereby reducing the grinding. 6 200841996 Grinding effect. Therefore, it is necessary to remove the scale on the surface of the polishing pad by polishing the pad conditioner, for example, by using a diamond disc to perform "initialization" or "cutting" or the like. The fibrous structure or pores on the surface of the mat. • However, the conventional diamond disc is an electroplated diamond disc whose structure is drilled. Dispersed on the disc substrate and then plated with a layer of nickel metal to adhere the broken diamond to the substrate. problem. Diamond particles that fall off when the mat is roughened or roughened can severely scratch the surface being polished (semiconductor wafer) in the subsequent polishing process. . Since the polishing pad conditioner directly affects the chemical polishing process and the quality of the semiconductor wafer to be polished, there is a need to provide a polishing pad conditioner that is resistant to abrasion and is not easily affected by the grinding process of the polishing pad. With its production method. SUMMARY OF THE INVENTION It is an object of the present invention to provide a polishing pad conditioner comprising: a patterned substrate and a hard coat layer. The patterned substrate has a three-dimensional pattern formed by a plurality of large scales. The hard coat layer conforms to the stereoscopic wood and its hardness is substantially greater than 15 arsenic &
法，IF —二、、的另目的在提供一種製拋光墊平整器的方 此-其材^括下述步驟：首先提供—基材，之後圖案化 案。㈣在立體其圖具宰有上複數個突出部，藉以形成-個立體圖 形。 /、上形成硬膜層，使硬膜層與立體圖案共 7 200841996 根據以上所述之較佳實施例，本發明之技術特徵係根據 被研磨表面之材質以及研漿的特性，利用基材之晶格排列方 式’在基材表面設計立體圖案，並且在立體圖案上沉積硬度 貫質大於15Gpa的硬膜層’利用基板本材質本身的立體圖 案，並配合硬膜層的硬度可使立體圖案不易因爲與拋光墊磨 擦或修整而產生鑽石碎屑，以防止鑽石碎屑附著於拋光墊 上，並在後續研磨製程中刮傷受研磨表面。 【實施方式】 根據本發明的目的係在提供一種耐磨耗且不易產生鑽 石碎屑的拋光墊平整器以其製作方法。 為讓本發明之上述和其他目的、特徵、優點與實施例能 更明顯易懂，特舉一種應用於半導體化學機械研磨製程中用 來起始化拋光墊的的拋光墊平整器作為較佳實施例說明如 下，然此一較佳實施例並非用以限制本發明，任何依照不脫 離本發明之精神的潤飾與更動，都包含於本發明的保護範圍 内。 凊參照第1A圖和1B圖，第1A圖係根據本發明一較佳 實施例所繪示的一種拋光墊平整器1〇〇的結構示意圖。第比 圖係根據第1A圖所繪示的拋光墊平整器1〇〇的結構剖面圖。 在本發明的較佳實施例之中，拋光墊平整器1〇〇為圓形 拋光墊，係運用於半導體晶圓製程中。拋光墊平整器1⑽， 包括·圖案化基材1〇2以及硬膜層1〇4。其中圖案化基材1〇2 具有由複數個突出部101所形成的立體圖案1〇2a。在本發明 8 200841996 的實施例之中，圖案化基材102之材質係根據被初始化之拋 光墊的材質以及化學機械研磨製程所選研漿之特性，再考量 基材102本身晶格的排列方式來加以選擇。案化矽基材100 之材質較佳為晶格排列為（100)的單晶砍（single crystalline)。 在本發明的較佳實施例之中，立體圖案102a係由複數個 尺寸均勻的突出部101所組成。但在其他實施例之中，組成 立體圖案102a的複數個突出部，具有不同的尺寸範圍，但這 些突出部101較佳具有實質介於lum到10mm之間的平均高 度。這些突出部101可以是多面體，例如外觀為多邊形錐狀 體的規則突起。但在本發明的較佳時施例之中，每一個突出 部101皆為三角錐體，且每一個三角錐體都至少具有一個矽 晶格排列為（100)的結晶面。 硬膜層104則共形於立體圖案102a之上，並且具有實質 大於15Gpa的硬度。硬膜層104的材質可以是奈米鑽石 (Nano_Diamond)、多晶鑽石（Poly- Diamond)、非晶鑽石 (Amorphous Diamond)、礙化梦、氮化蝴、氮化钦或上述任意 組合。在本發明的較佳實施例之中，硬膜層104的厚度係實 質介於5nm到lnm之間。 另外為了強化圖案化基材102的強度，在本發明的一些 實施例之中，拋光墊平整器100還包括一金屬層106，固定 於圖案化基材102的表面，相對於立體圖案102a的另外一側。 本發明的另一目的在提供一種製造拋光墊平整器的方 法，請參照第2圖，第2圖係根據本發明的較佳實施例所繪 示製造拋光墊平整器100的製造流程圖。 9 200841996 此一製造方法包括下述步驟：請參照步驟SI，首先提供 基材102。其中基材102之材質，係根據被初始化之拋光墊 的材質以及化學機械研磨製程所選研漿之特性來決定。基材 100之材質可以是單晶矽。在本發明的一些實施例之中，驟 S1還包括另一個子步驟S11，就是將金屬層106，固定於基 材102的表面，相對於立體圖案l〇2a的另外一側，藉以強化 基材102的強度。例如藉由理氣相沉積、化學氣相沉積、濺 鍍或蒸鍍製程，在基材102的表面沉積金屬層106，藉以強 化基材102的強度。 之後請參照步驟S2，圖案化此基材102，使其具有複數 個突出部101，藉以形成一個立體圖案l〇2a。在步驟S2中 基材102的圖按化係藉由傳統的半導體微影製程（Photo Lithography)來加以完成。值得注意的是，突出部1〇1所組成 的立體圖案102a，係根據被研磨晶圓之材質以及化學機械研 磨製程所選研漿之特性，並考量基材102之經格排列來加以 決定。且立體圖案102a係形成於基材102之上，相對於金屬 層106的另外一侧。 接著請參照步驟S3，在立體圖案l〇2a上形成硬膜層 104 ’使硬膜層104與立體圖案l〇2a共形。其中硬膜層104 係採用例如物理氣相沉積、化學氣相沉積、濺鍍或蒸鍍製 程’將奈米鑽石（Nano-Diamond)、多晶鑽石（Poly· Diamond)、 非晶鑽石（Amorphous Diamond)、碳化梦、氮化硼、氮化鈦或 上述任意組合之材質沉積在立體圖案l〇2a上。 由上述本發明較佳實施例可知，本發明的技術特徵係在 200841996 於考量研磨製程所選用的研漿以及被初始化之拋光墊的物 理化學特性’搭配基材之晶格排列方式，在基材表面形成立 體圖案’並且在立體圖案上沉積厚度實質大於5nm_lmm，且 其硬度實質大於15Gpa的硬膜層。 由於本發明之拋光墊平整器係藉由，沉積有一層硬膜層 的立體圖案表面，來對拋光墊進行初始化與粗操化處理。因 此可使拋光墊平整器具有耐磨耗、不易產生鑽石碎屑以及防 止研磨碎屑堆積的功能。不僅可延長拋光墊平整器的壽命， 而且更可解決習知拋光墊平整器因鑽石碎屑脫落導致研磨 品質不佳影響產品良率的問題。 雖然本發明已以較佳實施例揭露如上，然其並非用以限 定本發明，任何相關技術領域具有通常知識者，在不脫離本 發明之精神和範圍内，當可作各種之更動與潤飾，因此本發 明之保護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與實施例能 更明顯易懂，所附圖式之詳細說明如下： 第1A圖係根據本發明一較佳實施例所繪示的一種拋光 墊平整器100的結構示意圖。 弟1B圖係根據弟ία圖所繪示的拋光墊平整器1⑽的結 構剖面圖。 第2圖係根據本發明的較佳實施例所繪示製造拋光墊平 整器100的製造流程圖。 11 200841996 為了清楚繪示起見，圖示中的元件並未按照比例尺加以 繪示。在不同圖示之中，元件參照號碼可能會有重複，用以 標示相對應或相似的元件。 【主要元件符號說明】 100 :拋光墊平整器 102 :基材 104 :硬膜層 S1 :提供一基材。 101 :突出部 102a :立體圖案 S11 :將金屬層固定於基材的表面，相對於立體圖案的另外 一側0 52 :圖案化基材使其具有複數個突出部，藉以形成一個立體 圖案。 53 :在立體圖案上形成硬膜層，使硬膜層與立體圖案共形。 12The other purpose of the method, IF-2, is to provide a polishing pad conditioner which includes the following steps: first, the substrate is provided, followed by patterning. (4) In the three-dimensional figure, there are a plurality of protruding parts to form a three-dimensional figure. /, forming a hard coat layer to make the hard coat layer and the three-dimensional pattern together 7 200841996 According to the preferred embodiment described above, the technical feature of the present invention utilizes the substrate according to the material of the surface to be polished and the characteristics of the slurry The lattice arrangement method 'designs a three-dimensional pattern on the surface of the substrate, and deposits a hard film layer having a hardness of more than 15 Gpa on the three-dimensional pattern'. The three-dimensional pattern of the material itself is used, and the hardness of the hard layer layer is used to make the three-dimensional pattern difficult. Diamond scrap is generated by rubbing or trimming with the polishing pad to prevent diamond debris from adhering to the polishing pad and scratching the surface to be polished in a subsequent grinding process. [Embodiment] It is an object of the present invention to provide a polishing pad conditioner which is wear resistant and which is less prone to generate diamond debris. In order to make the above and other objects, features, advantages and embodiments of the present invention more apparent, a polishing pad conditioner for use in initiating a polishing pad in a semiconductor chemical mechanical polishing process is preferred. It is to be understood that the preferred embodiment is not intended to limit the invention, and any modifications and changes that are not departing from the spirit of the invention are included in the scope of the invention. Referring to Figs. 1A and 1B, Fig. 1A is a schematic view showing the structure of a polishing pad conditioner 1 according to a preferred embodiment of the present invention. The figure is a sectional view showing the structure of the polishing pad conditioner 1A according to Fig. 1A. In a preferred embodiment of the invention, the polishing pad conditioner 1 is a circular polishing pad for use in a semiconductor wafer process. The polishing pad conditioner 1 (10) includes a patterned substrate 1〇2 and a hard coat layer 1〇4. The patterned substrate 1〇2 has a three-dimensional pattern 1〇2a formed by a plurality of protrusions 101. In the embodiment of the present invention 8 200841996, the material of the patterned substrate 102 is based on the material of the polishing pad being initialized and the characteristics of the selected slurry of the chemical mechanical polishing process, and then the arrangement of the crystal lattice of the substrate 102 itself is considered. Come and choose. The material of the substrate 100 is preferably a single crystal having a lattice arrangement of (100). In a preferred embodiment of the invention, the three-dimensional pattern 102a is comprised of a plurality of projections 101 of uniform size. However, in other embodiments, the plurality of protrusions constituting the three-dimensional pattern 102a have different size ranges, but the protrusions 101 preferably have an average height substantially between lum and 10 mm. These projections 101 may be polyhedrals, such as regular protrusions that look like a polygonal cone. However, in a preferred embodiment of the invention, each of the projections 101 is a triangular pyramid, and each of the triangular pyramids has at least one crystal face having a lattice of (100). The hard coat layer 104 is conformed to the topographic pattern 102a and has a hardness substantially greater than 15 GPa. The material of the hard coat layer 104 may be Nano-Diamond, Poly-Diamond, Amorphous Diamond, Obstacle Dream, Nitride Butterfly, Nitriding, or any combination thereof. In a preferred embodiment of the invention, the thickness of the hard coat layer 104 is substantially between 5 nm and 1 nm. In addition, in order to enhance the strength of the patterned substrate 102, in some embodiments of the present invention, the polishing pad conditioner 100 further includes a metal layer 106 fixed to the surface of the patterned substrate 102 with respect to the three-dimensional pattern 102a. One side. Another object of the present invention is to provide a method of manufacturing a polishing pad conditioner which is referred to in Fig. 2, which is a flow chart showing the manufacture of a polishing pad conditioner 100 in accordance with a preferred embodiment of the present invention. 9 200841996 This manufacturing method comprises the following steps: Referring to step SI, a substrate 102 is first provided. The material of the substrate 102 is determined according to the material of the polishing pad to be initialized and the characteristics of the slurry selected by the chemical mechanical polishing process. The material of the substrate 100 may be a single crystal crucible. In some embodiments of the present invention, step S1 further includes another sub-step S11 of fixing the metal layer 106 to the surface of the substrate 102 relative to the other side of the three-dimensional pattern 10a, thereby strengthening the substrate. The strength of 102. The metal layer 106 is deposited on the surface of the substrate 102 by, for example, a vapor deposition, chemical vapor deposition, sputtering or evaporation process, thereby enhancing the strength of the substrate 102. Thereafter, referring to step S2, the substrate 102 is patterned to have a plurality of protrusions 101, thereby forming a three-dimensional pattern l〇2a. The patterning of the substrate 102 in step S2 is accomplished by conventional semiconductor photolithography (Photo Lithography). It is to be noted that the three-dimensional pattern 102a composed of the protrusions 1〇1 is determined according to the material of the wafer to be polished and the characteristics of the slurry selected by the chemical mechanical polishing process, and considering the lattice arrangement of the substrate 102. And the three-dimensional pattern 102a is formed on the substrate 102 with respect to the other side of the metal layer 106. Next, referring to step S3, a hard coat layer 104' is formed on the three-dimensional pattern 10a to make the hard coat layer 104 conform to the three-dimensional pattern l2a. The hard coat layer 104 is made of, for example, physical vapor deposition, chemical vapor deposition, sputtering or evaporation process. 'Nano-Diamond, Poly Diamond, Amorphous Diamond A carbonized dream, boron nitride, titanium nitride or a combination of any of the above is deposited on the three-dimensional pattern l〇2a. It can be seen from the above preferred embodiments of the present invention that the technical features of the present invention are in 200841996, in consideration of the slurry selected for the polishing process and the physicochemical characteristics of the initialized polishing pad, the lattice arrangement of the substrate, in the substrate. The surface forms a three-dimensional pattern 'and a hard coat layer having a thickness substantially greater than 5 nm - 1 mm and a hardness substantially greater than 15 GPa is deposited on the three-dimensional pattern. Since the polishing pad conditioner of the present invention is formed by depositing a three-dimensional pattern surface of a hard coat layer, the polishing pad is initialized and roughened. This allows the pad conditioner to be wear resistant, less prone to diamond debris, and prevent the accumulation of abrasive debris. It not only prolongs the life of the polishing pad conditioner, but also solves the problem that the polishing pad conditioner is affected by the poor quality of the diamond due to the falling off of the diamond chips. While the invention has been described above by way of a preferred embodiment, it is not intended to limit the invention, and it is to be understood by those of ordinary skill in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; A schematic structural view of a polishing pad conditioner 100 is illustrated. Figure 1B is a cross-sectional view showing the structure of the polishing pad conditioner 1 (10) according to the figure of the figure. Figure 2 is a flow diagram showing the fabrication of a polishing pad conditioner 100 in accordance with a preferred embodiment of the present invention. 11 200841996 For the sake of clarity, the elements in the illustrations are not drawn to scale. In the different illustrations, the component reference numbers may be repeated to indicate corresponding or similar components. [Main component symbol description] 100: Polishing pad conditioner 102: Substrate 104: Hard layer S1: A substrate is provided. 101: protrusion portion 102a: three-dimensional pattern S11: a metal layer is fixed to the surface of the substrate, with respect to the other side of the three-dimensional pattern. 0 52: The substrate is patterned to have a plurality of protrusions, thereby forming a three-dimensional pattern. 53: Forming a hard coat layer on the three-dimensional pattern to conform the hard coat layer to the three-dimensional pattern. 12