200841491 九、發明說明： 【發明所屬之技術領域】 體支架的製造方法，尤 本發明係有關於一種發光上極 和種猎由-金屬基板之結合，使 得到體積較小之表面黏著型發光:、、泉間距、碰，進而 極體的製造方法。 【先丽技術】 早在7 0年代就已經有發光二極 ·200841491 IX. Description of the invention: [Technical field of invention] The method for manufacturing a body stent, in particular, relates to a combination of a light-emitting upper pole and a hunting-metal substrate, so that a surface-adhesive type of light having a small volume is: , spring spacing, touch, and further the manufacturing method of the polar body. [Xianli Technology] As early as the 70s, there have been two light poles.
Diode’ LED)的發明，其對人類的生」l :ltting 響。數十年來，人們仍不斷的努力，希望；;發明出 用4的=源，然而甚多的關鍵技術上的瓶頸2無: 犬破，故將其應用於日常照明上確實存在了許多問題，例 如免度的提昇、產品的壽命問題。 近幾年來，由於人們在這些技術層面的問題上取得許 多重大突破’使得LED的應用面更為廣泛。哪與傳統光 源相較具有許多的優勢，包括體積小、發光效率佳、操作 反應速度快、可撓式或可_式it件，且無減射與水銀 等有毒物質的污染。 曰目前led的製造技術已具有一定的成熟度，亮度也已 提高到一定的程度，已應用的範圍包括：汽車儀表板、液 畢顯示板背光源、室内照明、掃描機與傳真機光源等用途。 未來的開發目標在於製作出耗電量低，可大量節省能源之 南效率與高亮度的發光二極體；而微型的發光二極體亦是 另一項重要的開發項目，·主要係可將微型化的發光二極體 應用於作為電子裝置的發光光源，例如行動電話、筆記型 電腦或PDA螢幕的背光板光源，依據此類型電子產品的需 200841491 要’表面黏著树之發光二極體即非常適用。 而隨著積體電路製作技術的進步， 製作持續朝著細微化的趨勢發展，並且與 模、高積集度的電子線路，因此其具備更大規 時為了因應I c製程技術忾ί/產口口亦更加完整。同 輕薄短小，電子二訊產品走向 式演進成表面黏著式（Surfa :路板上的技術也由插件The invention of Diode’ LED has its effect on human beings: ltingting. For decades, people have been working hard, hoping; invented the source of 4, but many of the key technical bottlenecks are not: dogs are broken, so there are indeed many problems in applying them to daily lighting. For example, the increase in exemption and the life of the product. In recent years, LEDs have become more widely used due to many major breakthroughs in these technical issues. Compared with traditional light sources, it has many advantages, including small volume, good luminous efficiency, fast operation response, flexible or readable, and no pollution by toxic substances such as subtraction and mercury.曰 At present, the manufacturing technology of led has a certain maturity, and the brightness has also been improved to a certain extent. The scope of application has been: automobile dashboard, liquid-battery panel backlight, indoor lighting, scanner and fax machine light source, etc. . The future development goal is to produce a light-emitting diode with low power consumption and a large energy saving efficiency, and a miniature light-emitting diode is another important development project. The miniaturized light-emitting diode is applied as a light source of an electronic device, such as a backlight source of a mobile phone, a notebook computer or a PDA screen. According to this type of electronic product, 200841491 is required to be a surface-emitting tree light-emitting diode. Very suitable. With the advancement of the integrated circuit manufacturing technology, the production continues to move toward the trend of miniaturization, and the electronic circuit with the model and high integration, so it has a larger regulation in order to respond to the I c process technology 忾ί/product The mouth is also more complete. Same as thin and light, the electronic two-in-one product evolved into a surface-adhesive type (Surfa: the technology on the road board is also plugged in by the plug-in
^ ,b , 4^?V1Ce，SMD) J 因而倍受看好。 ^ P長和寸色的SMD型晶片電容 壓後元件之發光二極體’其為-金屬板經沖 體設置腳，然?藉由塑膠射出將多數個繼 中，再反上。接著將晶片置人該多數個絕緣殼體 :常:用=導線將接腳與晶片電性連接，進行打線^ =以封裝後即成為表面黏著元件發光二 _惟/f知表面黏著元件之發光二極體，其金屬導線與 般會有-段輯，麟就會增加打線的距離，也就 =增加金屬導線的長度，然而通常金屬導線係為金線， 甘触本會上升；此外因為金屬導線與接腳無法很鄭近，故 其體積也會隨之變大。 .再者，以發光效率而言，發光二極體中的晶片所能承 1的功率佔重要因素，高功率發光晶片之應角，可使單顆 t光—極體的梵度往上提升。進一步而言，可有效的增加 叙光:極體的應用範圍，然而當功率提升後，發光二極體 中的晶片之工作溫度會迅速上升，習知表面黏著元件之發 光二極體未能有效解決晶片的散熱問題。 200841491 計合=有===:=可改善’提出-種設 【發明内容】 、 本發明之主要目的，在於楹徂一 製造方法，可以縮短打線距離而降㈣$光i極體支架1 到體積較小之高功率發光二極體。·本，错此也可以付 本發明之另一目的，A你钽 製造方法，可將集中於高功率晶片光二極體支架的 到散熱效果。 日片的熱！向外傳遞，以達 本發明之又一目的，Λ於担乂从 製造方法，第一金屬基板ί第發光二極體支架的 之高功率發光二極體，比單一 基板相互結合而產生 為了達成上述之目的較高之生產良率。 支架的萝造方、丰，6α 毛月係提供一種發光二極體 該第-金屬基板成:有:c成型-第-金屬基板， 成型有一第二支竿::r金屬基板，該第二金屬基板 金屬基板;合將該第-金屬基板及該第二 極片間形成有空隙"將^祕该基部’使該基部與該電 之基部上，並將該3 it晶片黏設於該第二金屬基板 該電極片；以;5=错由&屬導線進行打線電性連接於 電極片與該基#，fr絕緣殼體，將該絕緣殼體包覆於該 /、，使該接腳外露於該絕緣殼體。 晶片的基部鄰近支弟二金屬基板中用以承载 與該電極片之;;金屬基板之電極片，以縮短該晶片 、、泉距#而降低成本，藉此也可以得到體積 200841491 較小之高功率發光二極體。 再者，本發明在第二金屬基板之基部底部突伸成型一 凸塊，藉由該凸塊可將集中於高功率晶片的埶量向ς傳 ^達到散熱效果。同時利用第—金屬基板與第二金屬 互結合而產生之高功率發光二極體，比單一金屬板 有較兩之生產良率。 能更進—步瞭解本發明之特徵及技術内容，請參 二失考^本發明之詳細朗無目，然而所關式僅提 /、>考/、5兄明用，並非用來對本發明加以限制者。 【實施方式】 -jt力閱第—圖至第六圖所示，本發明係提供一種發光 —極=支架的製造方法，該製造方法包括下列步驟：^ , b , 4^? V1Ce, SMD) J is therefore highly regarded. ^ P-length and inch-size SMD type chip capacitors The light-emitting diodes of the post-pressing elements' are - the metal plates are set by the punches, and then the plastics are used to shoot the majority and then reverse. Then, the wafer is placed on the plurality of insulating shells: often: the pins are electrically connected to the wafer by using the wires, and the wires are soldered. ^= After the package, the surface-adhesive elements are illuminated. The diode, the metal wire and the general-section series, the Lin will increase the distance of the wire, that is, increase the length of the metal wire, but usually the metal wire is a gold wire, the touch will rise; The wires and pins cannot be very close, so their volume will also become larger. Furthermore, in terms of luminous efficiency, the power of the wafer in the light-emitting diode can be an important factor, and the angle of the high-power light-emitting chip can raise the van Gogh of a single t-light body. . Further, the application of the polar body can be effectively increased. However, when the power is increased, the operating temperature of the wafer in the light-emitting diode rapidly rises, and the light-emitting diode of the surface-adhesive component is not effective. Solve the heat dissipation problem of the chip. 200841491 算合=有===:= can be improved 'proposed-species' [invention] The main purpose of the present invention is to make a manufacturing method that can shorten the wire-traveling distance and reduce (four) $-light body bracket 1 to Smaller, high power light-emitting diode. · Ben, this can also be paid for another purpose of the present invention. A manufacturing method can focus on the heat dissipation effect of the high power wafer photodiode support. The heat of the film! For the purpose of achieving the further object of the present invention, the high-power light-emitting diode of the first metal substrate ί light-emitting diode holder is combined with a single substrate to be produced in order to achieve The above-mentioned purpose is higher production yield. The base of the stent is provided with a light-emitting diode. The first-metal substrate is formed by: a c-forming-metal substrate, and a second support::r metal substrate, the second a metal substrate metal substrate; a gap is formed between the first metal substrate and the second pole piece; the base portion is placed on the base portion and the electric base portion, and the 3 it wafer is adhered thereto a second metal substrate; the electrode sheet; the 5= wrong wire is electrically connected to the electrode sheet and the base #, fr insulating shell, and the insulating shell is coated on the /, so that the The pins are exposed to the insulative housing. The base of the wafer is adjacent to the electrode of the metal substrate for supporting the electrode sheet of the metal substrate, so as to shorten the cost of the wafer and the spring distance, thereby obtaining a small volume of 200841491. Power LEDs. Furthermore, the present invention protrudes and forms a bump on the bottom of the base of the second metal substrate, and the bump can transfer the amount of germanium concentrated on the high-power wafer to the heat dissipation effect. At the same time, the high-power light-emitting diode produced by the combination of the first metal substrate and the second metal has two production yields than the single metal plate. Can further understand the characteristics and technical content of the present invention, please refer to the second test. The details of the invention are unambiguous. However, the closed type only mentions /, > test /, 5 brothers use, not for this The invention is limited. [Embodiment] - jt force drawing - Figure 6 to figure 6, the present invention provides a method of manufacturing a light-emitting pole = bracket, the manufacturing method comprising the following steps:
1成型有-屬基板1 ’該第—金屬基板 丄取i百弟一支架1 1及至少一雷朽Η η 〇 A 架11呈-框架體。 I極片12，該第-支 該電極片12係成型於 極片12係以第一固定叉木11中心處’该電 电極片12固定於第—支 ^叉木11，使遠 極片1 2包含—第„ /、 °在卜實施例中該電 ’該第一電糾；l 2 m ^ i極片1 2 2 置空間14。 一电極片丄22之間成型一容 型有與第二電料1 2 2之侧邊各成 施例中該電極片”僅：，：1 5係向外延伸、在第二實 圖）。 2僅成型為—個電極片1 2 1 (如第七 9 200841491 (b) 沖壓成型一第二金屬基板2，該第二金屬基板 f為一厚薄材質，該第二金屬基板2也可為一厚材質（如 第八圖）或任何材質，其成型有一第二支架21及一基部 2 2，該第二支架2 1呈一框架體，可與第一支架1 1相 匹配。 該基部2 2係成型於該第二支架2 1中心處，該基部 2 2係以第二固定片2 3連接於第二支架2 1，使該基部 2 2固定於第二支架2 i上，在第一實施例中該第二固定 片2 3係為一個呈s形狀的片體，該第二固定片2 3也可 為其他形狀（圖略）。該基部2 2底部一體成型突伸一凸塊 2 4。 (c) 將第一金屬基板工之第一支架i i及第二金屬 基板2之第二支架21相互對準，而後將該第一支架工工 及第了支架2 1相疊結合（耦合）（如第五圖），並令該第 二金屬基板2之基部2 2容置於第一金屬基板i之容置空 間1 4，使該第一電極片工2工及第二電極片工2 2相鄰 於基。卩2 2，且該基部2 2周邊與該第一電極片1 2 1及 第二電極片1 2 2間係形成有空隙。 (d) 將晶片4黏設於該第二金屬基板2之基部2 2 上，亚將該晶片4藉由金屬導線進行打線步驟，以使晶片 4電性連接於該第一、第二電極片丄2工、2 2，·一般 金屬導線為金線，其所進行的打線結合係半導體〗c封裝 衣耘的站，疋自1 C晶粒或晶片各電極上，以金屬導線 進行各式打線結合，再牽線至第一、第二電極片2 2工、 1 2 2以兀成互連。在第一實施例中，該基部2 2上的晶 片4鄰近於該第-電極片121與第二電極片122，所 200841491 可減Α線的礙離，ϋ此可降低成本及 Μ1 Forming a substrate 1' The first metal substrate draws a bracket 1 1 and at least one Ray Η η A frame 11 is a frame body. The first pole piece 12, the first electrode piece 12 is formed on the pole piece 12 at the center of the first fixed fork 11; the electric electrode piece 12 is fixed to the first branch wood 11 to make the distal piece 1 2 includes - the first „ /, ° in the embodiment of the electric 'the first electric correction; l 2 m ^ i pole piece 1 2 2 space 14. The electrode sheet 丄 22 between a shape has The electrode sheets in the respective embodiments of the second electric material 1 2 2 are only "::: 15 are outwardly extended, in the second real image". 2 is formed into only one electrode sheet 1 2 1 (as in the seventh 9 200841491 (b) stamping and forming a second metal substrate 2, the second metal substrate f is a thick material, and the second metal substrate 2 can also be a A thick material (such as the eighth figure) or any material is formed with a second bracket 21 and a base portion 2 2 , and the second bracket 21 is a frame body that can be matched with the first bracket 11 . Formed at the center of the second bracket 21, the base 2 is connected to the second bracket 2 by the second fixing piece 23, and the base 22 is fixed to the second bracket 2i. In the example, the second fixing piece 23 is a s-shaped piece body, and the second fixing piece 23 can also have other shapes (not shown). The base portion 2 2 is integrally formed with a protrusion 24 . (c) aligning the first bracket ii of the first metal substrate and the second bracket 21 of the second metal substrate 2 with each other, and then laminating (coupling) the first bracket worker and the first bracket 2 1 ( As shown in FIG. 5, the base portion 2 2 of the second metal substrate 2 is received in the accommodating space 14 of the first metal substrate i, so that the first electrode sheet is The second electrode and the second electrode die 2 2 are adjacent to the base 卩2 2, and a gap is formed between the periphery of the base portion 2 2 and the first electrode sheet 1 2 1 and the second electrode sheet 1 2 2 . d) the wafer 4 is adhered to the base portion 2 2 of the second metal substrate 2, and the wafer 4 is electrically connected to the first and second electrode sheets by the metal wire. 2 workers, 2 2, · The general metal wire is a gold wire, and the wire bonding system is a semiconductor package. The station is packaged from the 1 C die or the electrodes of the wafer, and the wire is combined with various wires. And then to the first and second electrode sheets 2, 2 2 2 to form an interconnection. In the first embodiment, the wafer 4 on the base 22 is adjacent to the first electrode sheet 121 and the second The electrode sheet 122, the 200841491 can reduce the obstacle of the smashing line, thereby reducing the cost and Μ
係以射出成型的方;=體3如弟t圖）’該絕緣殼體3 ^與該基部電極片121、 機卜用兩半全層射出成ι係為在樹脂注射成形 金屬模的空間内部=住金屬基板1、2的規定部分，在 化，巍入模屡加工!:f注入溶化的樹脂，接著使其冷卻固 外露於該絕緣殼W；!形狀和尺寸的卿。該凸塊2 4係 ，該接腳i 5折弯^面，用以散熱該晶片4之工作溫度 該接腳15為二斤;緣殼體3。在第一實崎 可選擇性的體3其他部位。另， 將第一支架11_1支架2=^21去除，也可僅 請參閱第七圖及笫士图，+Μ ^ 2僅成型為一個第 3，在罘一貫施例中該電極片1 係作為—極性接點（如陽極接點），=弟：；電極片121 作為另一極性接點（如陰極接^。;二至屬基板2則可 金屬基板2之基部2 2上”、H 4黏設於該第二 及6進行打線步驟，以使曰片：:曰片4藉由金屬導線5 121及第二金屬基板2 %性連接於該第-電極片 本發明提供一種發来二 具有二金屬基Μ、^光’的製造方法’可製成 基板2中用以承载晶片4縣==架，使該第二金屬 1之第-電極片i 2 i與第 於第—金屬基板 片4與該第一電極片12 mi 2 2，以縮短該晶 離而降低成本，藉此也可以得:丨：二；片12 2之打線距 j粗積較小之高功率發光二 11 200841491 一几:本發明5第二金屬基板2之基部2 2底部突伸 4的埶旦ϋ4 ’藉由該凸塊2 4可將集中於高功率晶片 以達到散熱效果。同時利用第-金屬 極體’比單-金魏妹高之生^功率發光一 ㈣所述僅林制之較佳實施例，非意欲揭限本 呆護範圍，故舉凡運用本發明說明書及圖式内 寻效變化，均同理皆包含於本發明 = 圍内，合予陳明。 催〜侏遴乾 【圖式簡單說明】 第一圖係本發明之流程圖。 第二圖係本發明第一實施例之第一金屬基板之示意圖。 第三圖係本發明第一實施例之第二金屬基板之示意^。 第四圖係本發明第一實施例之支架之立體分解圖: 第五圖係本發明第一實施例之支架之立體組合圖。 第六圖係本發明第一實施例之發光二極體之剖面圖。 第七圖係本發明第二實施例之支架之立體分解圖。 第八圖係本發明第三實施例之支架之立體分解圖。 第九圖係本發明第二實施例之基座黏設晶片及進行打 *立體示意圖。 、、'之 【主要元件符號說明】 12 電極片 1 第一金屬基板 11 第一支架 12 200841491 121第一電極片 1 2 2第二電極片 13 第一固定片 14 容置空間 15 接腳 - 第二金屬基板 21 第二支架 2 2 基部 2 3 第二固定片 2 4 凸塊 3 絕緣殼體 4 晶片 5 金屬導線 6 金屬導線 13The film is formed by injection molding; the body 3 is the same as the base electrode sheet 121, and the two-layer full-layer of the machine is formed into a space inside the resin injection molding metal mold. = The predetermined portion of the metal substrates 1 and 2 is placed, and the mold is processed in the mold. The f-injected resin is injected into the mold, and then cooled and exposed to the insulating shell W; shape and size. The bumps 2 4 are formed, and the pins i 5 are bent to reduce the operating temperature of the wafer 4 . The pins 15 are two jins; the edge housing 3 . In the first Shisaki, other parts of the body 3 can be selectively selected. In addition, the first bracket 11_1 bracket 2 = ^ 21 is removed, or only the seventh figure and the gentleman figure can be referred to, + Μ ^ 2 is only formed into a third, in the consistent example, the electrode sheet 1 is used as - polarity contact (such as anode contact), = brother:; electrode sheet 121 as another polarity contact (such as cathode connection; two to substrate 2 can be on the base 2 of metal substrate 2), H 4 Adhering to the second and sixth wire bonding steps, so that the cymbal film: the cymbal 4 is connected to the first electrode plate by the metal wire 5 121 and the second metal substrate. The present invention provides a hairpin The method for manufacturing a two-metal ruthenium and a ruthenium can be formed into a substrate 2 for carrying a wafer 4 == frame, and the first electrode sheet i 2 i of the second metal 1 and the first metal substrate sheet 4 and the first electrode sheet 12 mi 2 2, in order to shorten the crystal separation and reduce the cost, thereby also obtaining: 丨: two; the film 12 2 is the high-power illuminating light with a narrow line j j 11 200841491 A few: the base portion 2 of the second metal substrate 2 of the present invention 2 has a bottom protrusion 4 of the base 4' by which the bumps 24 can be concentrated on a high-power wafer to achieve a heat dissipation effect. When the first metal body is used, the preferred embodiment of the forest system is not limited to the preferred embodiment of the forest system. The changes are all included in the present invention, and are combined with Chen Ming. 催~侏遴干 [Simple description of the drawings] The first figure is a flow chart of the present invention. The second figure is the first embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS The third drawing is a schematic view of a second metal substrate according to a first embodiment of the present invention. The fourth drawing is an exploded perspective view of the stent of the first embodiment of the present invention: Fig. 6 is a perspective view of a light-emitting diode according to a first embodiment of the present invention. Figure 7 is a perspective exploded view of a second embodiment of the present invention. FIG. 9 is a perspective exploded view of a stent according to a third embodiment of the present invention. FIG. 9 is a perspective view of a susceptor-attached wafer according to a second embodiment of the present invention. 1 first metal substrate 11 first Rack 12 200841491 121 first electrode sheet 1 2 2 second electrode sheet 13 first fixing piece 14 accommodating space 15 pin - second metal substrate 21 second bracket 2 2 base 2 3 second fixing piece 2 4 bump 3 Insulating housing 4 wafer 5 metal wire 6 metal wire 13