200837509 九、發明說明： 【發明所屬之技術領域】 本發明是關於一種基板位置偵測方法'一種基板處理 方法，以及一種基板處理裝置。更特定言之，本發明是針 對一種置放於支撐板上之基板之位置偵測方法、一種基板 處理方法，以及一種基板處理裝置。 【先前技術】 ί、‘ ί. 、使用光阻之微影製程在半導體製造中為必要的。光阻 由感光性有機高分子或感光劑（ph〇t〇sensitive agent)與高 分子之混合物形成。在經曝光以及溶解之後，形成於基板 上之圖案之光阻用於在蝕刻基板或形成於基板上之層時， 將圖案轉錄(transcribe)至基板上。此高分子被稱為光阻， 且使用光源而在基板上形成精細圖案之製程被稱為微影製 程0 在此半導體製造過程中，通常借助於灰化處理 process)自基板移除用於形成管線或各種精細電路圖案 (例如’空間®案）或移除離子植人期卿作光罩之光阻。 在白纟灰化處理中，氧電漿與光阻起反應以在將晶圓 加，至高溫(攝氏200度至攝氏3〇〇度)之加熱 )上時移除光阻。氧氣（〇2)主要用 作反應^體，且可混合另—氣體以增強灰化效率。 若夫=:日日圓裝載在加熱器夾盤上之預設位置處。 設位置處或將其傾觸 °°火讀產生之熱可能不會流暢地傳輸至晶圓。 5 200837509 圖1A至圖2B說明置放於支撐板120上之晶圓w。 圖1A以及圖1B說明正常置放於支撐板12〇上之晶圓 W。就位狀態（in-positi〇n_state)之晶圓w置放於提供於 » 支撐板120之邊緣處的晶圓導件HO内部。 ^ 圖2A以及圖2B說明異常置放於支撐板12〇上之晶圓 W。歸因於一傳送(transfer)機器人（未圖示）之錯誤操作， 可能會將晶圓W裝載在晶圓導件140上。在此種情況下， 〇 晶圓導件14Ό引起晶圓W之一側與支撐板12〇間隔開且阻 止支撐板120之熱被傳輸至晶圓w的間隔(spaced)部分。 亦即，晶圓W之間隔部分具有比其非間隔部分低的溫度。 因此，未充分執行灰化處理。 傳統上尚未存在晶圓位置的偵測方法。因此，甚至在 異常置放晶圓W時仍不可避免地執行灰化處理。由於此一 原因，未充分執行灰化處理。 、 【發明内容】 1, 本發明之例示性實施例是針對置放於支撐板上之基板 之·，位置偵測方法。在例示性實施例中，债測方法可包 ， 括·里測支撐板之溫度；以及將經量測之溫度與預設之參 、 考溫度進行比較以偵測基板之位置。 、 —本，明之例示性實施例是針對—種基板處理方法。在 =不^貝加例中’處理方法可包括：將基板置放於支撐板 ’里測支撐板之溫度；以及將經制之溫度與 一參考溫 ^進行味w貞麻基板是否置放於支撐板上之預設位置 中。 6 Ο ϋ 200837509 例示示是針對-種基板處理裝置。在 執行基板之處理；Srr包括♦處理腔室，在其中 置放於此支魏上；加安裝於處理腔室内部，基板 度感測臾件，並—壯〇,、、、态，其經提供以加熱支撐板；溫 溫度控制器，上以感測糊板之溫度; 麥來㈣^ _ 自溫度制零_傳輸之信 之V二’以及主控制器，其經提供以控制基板 ^美^;^控制_據溫度感測零件所感測之溫度來 仙基板疋否置放於讀板上之賊位置中。 【實施方式】 i在下文中參考展示本發明之較佳實施例之所附圖式以 較充分地描述了本發明。_，本發明可崎多不同形式 來具體化且不應被解釋為限於本文所陳述之實施例。相反 地，提供此等實施例使得此揭露案將更為詳盡且完整，且 將充分將本發明之範疇傳達給熟習此項技術者。在全文中 相同參考數字表示相同組件。 雖然下文將例示性地描述灰化裝置，但可將本發明應 用至各種半導體製造裝置，諸如，應用在將晶圓置放於支 撐板上時執行處理的沈積裝置。 圖3為典型半導體製造裝置之圖，且圖4為圖3中所 說明之緩衝腔室之圖。 如圖3中所說明，半導體製造裝置包括晶圓傳送系統 1、緩衝腔室（buffer chamber) 2、傳送模組5、處理模組 6，以及控制器7。 7 0 Ο 200837509 日日圓傳送系統1鄰近於緩 自晶圓容器（未圖示）穿θ工 女置，其將 晶圓容器經分類為開放；送至缓衝腔室2。 閉式晶圓容器用於保護晶圓，且封 處=氣雜質或化學污染物。封閉式晶圓容器之代Li 者為别開式統集盒（Fr〇nt Open Unified Pod )( FOUP )。 ，傳达d糸二之代表性實例為設備前端模組 拉[Technical Field] The present invention relates to a substrate position detecting method, a substrate processing method, and a substrate processing apparatus. More specifically, the present invention is directed to a method of detecting a position of a substrate placed on a support plate, a substrate processing method, and a substrate processing apparatus. [Prior Art] ί, ‘ ί. , The use of photoresist lithography process is necessary in semiconductor manufacturing. The photoresist is formed of a mixture of a photosensitive organic polymer or a sensitizer and a high molecular compound. After exposure and dissolution, the photoresist formed on the substrate is used to transcribe the pattern onto the substrate when etching the substrate or a layer formed on the substrate. This polymer is called photoresist, and the process of forming a fine pattern on the substrate using a light source is called lithography process 0. In this semiconductor manufacturing process, usually by means of ashing process), it is removed from the substrate for formation. Pipeline or various fine circuit patterns (such as 'Space® case') or remove the photoresist from the ion implant. In the chalk ashing process, the oxygen plasma reacts with the photoresist to remove the photoresist when the wafer is applied to a high temperature (200 degrees Celsius to 3 degrees Celsius). Oxygen (〇2) is mainly used as a reaction body, and another gas can be mixed to enhance the ashing efficiency. Rufu =: The yen is loaded at the preset position on the heater chuck. Set the position or tilt it ° ° The heat generated by the fire reading may not be smoothly transferred to the wafer. 5 200837509 FIGS. 1A to 2B illustrate a wafer w placed on a support plate 120. 1A and 1B illustrate a wafer W that is normally placed on the support plate 12A. The wafer w in the in-positive state (in-positi〇n_state) is placed inside the wafer guide HO provided at the edge of the » support plate 120. ^ Figure 2A and Figure 2B illustrate a wafer W that is placed on the support plate 12A abnormally. The wafer W may be loaded on the wafer guide 140 due to an erroneous operation of a transfer robot (not shown). In this case, the wafer guide 14 turns one side of the wafer W apart from the support plate 12 and prevents the heat of the support plate 120 from being transferred to the spaced portion of the wafer w. That is, the spaced portion of the wafer W has a lower temperature than its non-spaced portion. Therefore, the ashing process is not sufficiently performed. Traditionally, there has been no detection method for wafer position. Therefore, the ashing process is inevitably performed even when the wafer W is abnormally placed. For this reason, the ashing process is not fully performed. SUMMARY OF THE INVENTION 1. An exemplary embodiment of the present invention is a position detecting method for a substrate placed on a support plate. In an exemplary embodiment, the debt measurement method may include: measuring the temperature of the support plate; and comparing the measured temperature with a preset reference temperature to detect the position of the substrate. The present exemplary embodiment is directed to a substrate processing method. In the case of = not, the processing method may include: placing the substrate in the support plate to measure the temperature of the support plate; and placing the temperature and the reference temperature to determine whether the taste w/ substrate is placed on the substrate In the preset position on the support plate. 6 Ο ϋ 200837509 An example is a substrate processing apparatus. The processing of the substrate is performed; Srr includes a processing chamber in which the support is placed; and is installed in the processing chamber, the substrate is sensed, and the state is strong, and the state is Providing a heating support plate; a temperature and temperature controller to sense the temperature of the paste; Mia (four) ^ _ self-temperature zero-transmission letter V two ' and a main controller, which is provided to control the substrate ^ US ^ ;^Control_ According to the temperature sensed by the temperature sensing component, the substrate is placed in the thief position on the reading board. The present invention has been described more fully hereinafter with reference to the accompanying drawings in the preferred embodiments. The present invention may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be more complete and complete, and the scope of the invention will be fully conveyed to those skilled in the art. Throughout the text, the same reference numerals indicate the same components. Although the ashing apparatus will be exemplarily described hereinafter, the present invention can be applied to various semiconductor manufacturing apparatuses such as a deposition apparatus which performs processing when the wafer is placed on a support plate. Figure 3 is a diagram of a typical semiconductor fabrication apparatus, and Figure 4 is a diagram of the buffer chamber illustrated in Figure 3. As illustrated in FIG. 3, the semiconductor manufacturing apparatus includes a wafer transfer system 1, a buffer chamber 2, a transfer module 5, a processing module 6, and a controller 7. 7 0 Ο 200837509 The Japanese yen transfer system 1 is adjacent to the wafer container (not shown) through the θ worker, which classifies the wafer container as open; and sends it to the buffer chamber 2. Closed wafer containers are used to protect wafers and contain = gas or chemical contaminants. The Li of the closed wafer container is the Fr〇nt Open Unified Pod (FOUP). , a representative example of the communication d糸2 is the device front-end module
Front End Module ) ( Wv\a \ 號中。 M)，其揭露於美國專利第 門'i=L2円安f於晶圓傳送系統1與傳送模組5之 如圖4所朗般安置之兩層 平堂3a與3b以及對準平臺如盥 7 及3b以在由傳送模組5所壯/、 ^平堂3a以 經處理之後將辦卩且。^^^/讀理模組6中 裝載於傳送模組5上之以及扑以對準待 理。使齡卻平臺3aj^h=處轉組^處執行處 用對準平臺4a以月4Κ + 來晶圓W之方法以及使 用對料至心及*來解日日日_ 術者所熟Μ將不再進行更詳細描述。為'、、、自此項技 傳达，組5之_側連接至 ΐ至多個處理模組6。在傳送模組5内部; 态人（未圖不）以用於將在對準平臺 、I、 之晶圓W傳送至處理模组6 从扑處所對準 之晶圓w傳送至冷卻平臺知以及理模組6處所處理 8 200837509 -----Γ — 。處理模組6連接至傳送模組5且經提供以用來處理晶 圓w。儘管在圖3中說明兩個處理模組6，但可提供至: 三個處理模組6。稍後將詳細描述各處理模組6。 夕Front End Module ) (Wv\a \ No. M), which is disclosed in the US patent door 'i=L2円安 f in the wafer transfer system 1 and the transfer module 5 as shown in Figure 4 The tiers 3a and 3b and the alignment platforms, such as 盥7 and 3b, will be processed after being processed by the transfer module 5 and processed. The ^^^/ reading module 6 is loaded on the transport module 5 and aligned with the processing. The age of the platform 3aj^h=transfer group ^ implementation at the alignment platform 4a with the month 4Κ + wafer W method and the use of the material to the heart and * to solve the day and day _ the surgeon is familiar with No more detailed description will be given. For the ',, and from this technology, the _ side of the group 5 is connected to the plurality of processing modules 6. Inside the transfer module 5; the state (not shown) is used to transfer the wafer W on the alignment platform, I, to the processing module 6 to transfer from the wafer w aligned to the cooling platform and Processing module 6 office processing 8 200837509 -----Γ — . The processing module 6 is coupled to the transfer module 5 and is provided for processing the wafer w. Although two processing modules 6 are illustrated in FIG. 3, they may be provided to: three processing modules 6. Each processing module 6 will be described in detail later. Xi
主控制器7連接至晶圓傳送系統卜緩衝腔室2、傳送 杈組5,以及處理模組6且經提供以用來控制晶圓％之整 ，處理。雖然為了便於描述而在此實施例中提及由主控二 7來控制整個處理之事實，但主控制器7可包括多個子 控制器且可將子控制器安裝於其對應設備之内部。 〜、圖5為圖3中所說明之處理模組6之圖。如圖5中所 况明丄處理模組6包括處理部分1〇、電漿產生部分20,以 及排^部分30。處理部分1Q執行包括灰化處理之基板處 電漿產生部分2G產生用於灰化處理中之電裝且將 电，提供至處理部分1〇。排氣部分3〇將處理部分1〇内部 之氣體以及反應副產物排放至外部。 处里4刀10包括外殼12、加熱器夾盤100、簇射 ::Wer)碩16 ’以及電源18。外殼12提供一處理腔室， 走可執行灰化處理。基板入口 12a形成於外殼12之側壁 ^在處理期間，基板w經由基板入口 12a而進入以及出 諸如裂縫門⑽d附）（未圖示）之打開以及封 二 ^打開或封閉基板入口 12a。排氣口 12b形成於外 Γ “^下壁處。外殼12内部之氣體是經由排氣口 121?排 胳孔口 12b形成於加熱器夾盤100周圍且連接至稍後 將描述之排氣部分3〇。 提（、加熱為夾盤100以在處理期間固持一基板W。加 9 200837509 =為夾盤100可為靜電夾盤。在基板w經裝載於加熱器夹 盔〇〇上之後’在處理期間基板w經加熱至預設之處理溫 度。稍後將詳細描述加熱器夹盤10()。 彼 提供簇射頭16以朝向加熱器夾盤100之頂面噴射電 漿。提供電源18以將功率供應至加熱器爽盤1〇〇。亦即电 提供電源18以將預設量之偏壓功率（bias p_〇供鹿？ 加熱器夾盤100。 〜 Ο υ 電漿赵部分2G在處理顧產生電漿謂電裝提供 族射頭16。電漿產生部分2G為遠端電漿產生裝置。亦 了触電漿產生部分2G包括磁控f 22、波導管線24， :體供應管線26。磁控管22產生用於在處理期間產生命 水之微波。提供波導管線24以將在磁控管22處所產: 微波導引至氣體供應管26。氣體供應管26經_ ^ =間供應反應氣體。沿波導管線26供應之反 = 處所產生之微波而產生電聚。在灰化處‘ 間，將電漿產生部分20處所產生π ^ J 1〇之簇射頭16。 處所產生之以供應至處理部分 排氣部分30控制處理部分1〇之壓力 =部氣體。排氣部分3。包括主排氣管線3心二： 乳官線32。如圖5中所說明’兩個子排氣 ^ ::Ϊ?個排氣口 -且連接至主排氣管 =官線32賴放之氣體絲餘主 ^ ，，線34排放至外部。可縣（未圖示 觀t Μ上，從而強制排放外殼12内部之氣體以降低= 10 Ο L) 200837509 殼12之内部壓力。 ，將參看圖5而在下文描述使用處理模組6之處理。 1處理開始，則經由晶圓人口❿將晶圓w裝載於加 Γ:“盤上00上。藉由加熱器夾盤100將經裝载之晶圓w 决：理度。電源18將偏壓功率供應至加熱器 冰ΐ〇 。日助於栗（未圖示）將内部氣體強制排放以將 Λ又、之内°^力降低至預設塵力。外殼12之内部摩力 tn·喊，且供應至加熱器夾盤刚之偏麼功率 。料麵力朗12⑽毫域㈣功率ΐ •瓦#1’則放電現象可在處理期間發生於外殼12内部。 从右.外叙12 <内部處理壓力以及溫度滿足預設的條 ’貝1電漿產生部分20產生電漿且將電漿供應至處理部分 r隹且排氣部分3〇使處理部分10之内部壓力維持在常規 =^即’電漿產生部分2()之磁控管以生微波，且 ，、波¥官線24將微波施加至經域體供應管％供應 =二應氣體以產生電裝。當電裝經過咖 电粒子（諸如’電子或離子）受到由接地金屬 斤衣成之族射碩16所關，而僅中子粒子（諸如 基(radicals))、經由簇射頭16而供應至基板w。此氧帝將 =保留於基板處之光阻。排氣部分3〇以常規的流動 1亥供應至外殼12中之電漿以及反應氣體以維持外ί 12之内部壓力。若移除晶圓…之表面上之光阻，則曰曰： W在自支禮構件_卸載之後經由晶圓人口工 = 12抽出。 』田外鈸 200837509 圖6為圖5中所說明之加熱器夾盤1〇〇之圖。加熱器 ^盤loo包括支撐板120、晶圓導件14〇，以及多個起模頂 杯（lift γη) 160。支撐板12〇具有圓盤狀板，圓盤狀板具 有比晶圓w之直徑大的直徑。將晶圓w置放於支撐板12〇 上。將晶圓導件140置放於支撐板12〇之頂面之邊緣處且 自支撐板120之頂面突出。如上文所描述，將就位狀態的 晶圓W置放於提供於支撐板120之邊緣處的晶圓導件140 内部。 可使多個起模頂桿160穿過支撐板120而上升至支撐 板120上方。上升該起模頂桿16〇以在將晶圓裝載於支撐 ，120上牯提昇一晶圓w以及下降該起模頂桿丨⑼以將經 裝載之晶圓W置放於支撐板12〇之頂面上。提昇轴（随 shaft) 162連接至起模頂桿16〇之下端且藉由驅動器164 而上升。 w將加熱态122安裝於支撐板120内部，且將多個感測 =二24埋在支撐板120中。加熱器122使用外部供應之功 率^加熱該支撐板120。感測器124即時感測該支撐板12〇 之溫度。由於感測器124可分別感測其所埋入部分之溫 度，因此可偵測一種與支撐板12〇之位置相對應的溫度。 或者’可僅安裝一個感測器124。 將+由感刪器124所偵測之溫度傳輸至溫度控制器 ⑻若&支擇板120之溫度達到預設的溫度，則溫度控制器 i〇〇 ^斷供應至加熱器122之功率，以使得支撐板120之 Μ’又i夠維持在預設的溫度。提供顯示部分200以顯示由 12 200837509 感測器124所偵測之溫度。 溫度控制器300連接至主控制器 之控制而操作該加熱器122。使用；p所=制：7 . 科同地設定該支撑板12G之溫度φ ^的處理 溫度傳輸至溫度控制器300。溫:控制二：：將設定的 的溫度來控制該感測器124以及加熱器可根據設定 警報元件400連接至主控制哭7 。制：報元件彻在緊急情況“時向外部“ 控 圖7為說明圖6中所說明之支 ^耳 圖，且圖8 Λ兮明舻栌士机叫 假以^之/皿度、交化的 之流程圖。之位置的偵測方法 盤⑽的偵測方法。 圖6中所說明之加熱器夾 么^ 7中所說明，在將晶圓W置放於支稽板GO之 别’加熱，支撐才反120且使其維持在加熱狀態。 P央^ t所述，經由晶圓入口 12 &將晶圓W裝載於加熱 L. ^置:上（S10)。如圖6中所說明，將經裝載之晶圓 16 /上升之支撐頂桿（suPP〇rt pin) 160上。支撐頂桿 _ 於曰^斗經I載之晶圓…與支撐板120連續地間隔開。由 ，w曰之溫度低於支撐板120之溫度，因此會由於晶圓 持板120之間的熱傳送而可能稍微降低該支撐板 A曰之酿度。然而，支撐板12Q之溫度變化微小，這是因 4日日圓W與支撐板12〇連續地間隔開。 上之在下，該支撐頂桿丨6〇以將晶圓W放在支撐板120 之後里謂該支撐板120之溫度（S20)。若將晶圓W放 13 200837509 在支撐板120上，則在晶圓％與支撐板12〇之間主動地傳 达熱且由於晶UJW而使支撐板12G冷卻至確定的溫度。然 而由於支撐板120由加熱器丨22加熱，因此支撐板120 之溫度隨時間流逝而上升。在圖7中，以實線繪製的曲線 表示當晶圓W置放於支撐板12〇之預設的位置中時，支撐 板120之溫度變化。在支撐板12〇經冷卻至近似攝氏247 度之後，藉由加熱器122將支撐板120加熱至攝氏25〇度。 以虛線繪製之曲線表示當晶圓w置放於支撐板12〇 之預设的位置範圍外時，支撐板之溫度變化。如圖2A 以及圖2B中所說明，由於傳送機器人之錯誤操作而可將 晶圓W置放於晶圓導件14〇上。在此種情況下，由於晶圓 W之一侧由於晶圓導件丨4〇而與支撐板12〇間隔開，因此 主動的熱傳送不能發生於晶圓W與支撐板120之間。此情 形是因為熱傳送之量是與接觸面積成比例。因此，當晶圓 w置放於預設的位置範圍外時，未使支撐板12〇冷卻至攝 氏247度，而疋在冷部至高於攝氏247度之溫度之後經重 新加熱。亦即，晶圓W置放於預設的位置中之情況下的溫 度變化ΔΤ〗大於晶圓w置放於預設的位置範圍外之情況下 的溫度變化δτ2。 將經量測之溫度與一參考溫度進行比較以偵測晶圓 W是否置放於預設的位置中（S30)。該參考溫度為用於偵 測晶圓W是否置放於預設的位置中的一種值且在晶圓ψ 置放於預設的位置中時具有自支撐板120之量測溫度的容 許範圍。將該參考溫度儲存於主控制器7之資料庫單元7a 14 200837509 中，且主控制器7之處理單元7b將經量測之溫度與該參考 μ度進行比較以偵測晶圓W是否置放於預設的位置中。在 經量測之溫度在該參考溫度範圍内的情況下，處理單元几 判定晶圓W是置放於預設的位置中。另一方面，在經量測 之溫度是在該參考溫度範圍外的情況下，處理單元7b判定 晶圓W置放於預設的位置範圍外。根據使用者要求的精確 度來確定該容許範圍。存在用於將經量測之溫度與參考溫 度進行比較的各種方法。現將在下文描述各比較方法中的 兩種。 一種比較方法為：在量測支撐板12〇之最低溫度之 後，將經量測之最低溫度與一參考溫度進行比較:亦^， 如圖7中所說明，當晶圓w置放於預設的位置中時，支撐 板120之最低溫度為攝氏247度。假定該容許範圍為攝氏 1度，則參考溫度為攝氏246度至攝氏248度。因此，在 支撐板120之經I測之最低溫度在該參考溫度範圍内的情 況下，可判定晶圓W置放於預設的位置中。 另一種比較方法為：在預設的時間流逝後量測該支撐 板120之溫度之後，將經量測之溫度與參考溫度進行比 較。舉例而言，假定支撐板120之經量測之溫度在指示預 設時間之tl時為攝氏247度且容許範圍為攝氏1度，則該 參考溫度為攝氏246度至攝氏248度。因此，在預設時間 tl流逝之後所量測之溫度在該參考溫度範圍内的情況下， 可判定晶圓W置放於預設的位置中。 當晶圓W置放於預設的位置範圍外時，主控制器7 15 200837509 操作ί報元件400以產生警報（S40)。警報使得操作人員 知悉生之事實。主控制器7暫時中止在整個系統執 行的<理（S5G) ’且操作人貞可在對誤差進行處理 新開始已暫時中止之處理。 π、如上文所描述，置放於支撐板120上之晶圓W之位置 付以=測。在晶m w置放於預設的位置範圍外的情況下， 產生吕報以警告使用者位置有誤差。A外，當將晶圓W置 放於預。又的位置範圍外時，暫時中止整個處理以防止由位 置誤差所引起的處理誤差。 μ如迄今所解釋的，可偵測晶圓是否置放於支撐板上之 預5又的位置中。特定言之，可能在沒有安裝-獨立的偵測 ι置的炀況下容易地偵測晶圓是否置放於預設的位置中。 當，圓置放於預設的位置範圍外時，產生警報以通知操作 人員位置有誤差且暫時中止整個處理以防止一種處理誤 差。 儘管已結合所附圖式中所說明之本發明之實施例描述 了本發明，但本發明不限於此。熟習此項技術者將顯而易 見可在不脫離本發明之範疇以及精神的情況下進行各種替 代、修改以及變化。 【圖式簡單說明】 圖1Α以及圖1Β說明正常裝載於加熱板上的晶圓。 圖2 Α以及圖2 Β說明異常裝載於加熱板上的晶圓。 圖3為典型半導體製造裝置之圖。 圖4為圖3中所說明之緩衝腔室之圖。 16 200837509 圖5為圖3中所說明之處理模組之圖。 圖6為圖5中所說明之加熱器爽盤之圖。 圖7為說明圖6中所說明之支撐板之溫度變化的曲線 圖。 * 圖8為說明根據本發明之基板位置偵測方法之流程 ' 圖。 【主要元件符號說明】 1 :晶圓傳送系統 f 2:緩衝腔室 3 a :冷卻平臺 3b :冷卻平臺 4a :對準平臺 4b :對準平臺 5:傳送模組 6:處理模組 7:主控制器 c， 7a :資料庫單元 7b :處理單元 ’ 10 :處理部分 12 :外殼 12a :基板入口 12b :排氣口 16 :簇射頭 1 8 :電源 17 200837509 20 電漿產生部分 22 磁控官 24 波導管線 26 氣體供應管線 30 排氣部分 32 次排氣管線 34 主排氣管線 100 :加熱器夾盤/支撐構件 120 :支撐板 122 :加熱器 124 :感測器 140 :晶圓導件 160 :起模頂桿/支撐頂桿 162 :提昇軸 164 :驅動器 200 :顯示部分 300 :溫度控制器 400 :警報元件 W :晶圓/基板 18The main controller 7 is connected to the wafer transfer system buffer chamber 2, the transfer cassette 5, and the processing module 6 and is provided for controlling the wafer %. Although the fact that the entire process is controlled by the master 2 is mentioned in this embodiment for convenience of description, the main controller 7 may include a plurality of sub-controllers and the sub-controllers may be installed inside its corresponding device. ~, Figure 5 is a diagram of the processing module 6 illustrated in Figure 3. As shown in Fig. 5, the processing module 6 includes a processing portion 1A, a plasma generating portion 20, and a wiring portion 30. The processing portion 1Q performs the substrate including the ashing process. The plasma generating portion 2G generates the electric device for use in the ashing process and supplies electricity to the processing portion 1A. The exhaust portion 3〇 discharges the gas inside the treatment portion 1 and the reaction by-product to the outside. The 4-knife 10 includes a housing 12, a heater chuck 100, a shower::Wer), and a power supply 18. The outer casing 12 provides a processing chamber that can be ashed. The substrate inlet 12a is formed on the side wall of the outer casing 12. During the process, the substrate w enters through the substrate inlet 12a and opens, such as a crack door (10) d (not shown), and opens or closes the substrate inlet 12a. The exhaust port 12b is formed at the outer wall of the outer casing. The gas inside the casing 12 is formed around the heater chuck 100 via the exhaust port 121, the port opening 12b, and is connected to the exhaust portion which will be described later. 3〇. (heating to the chuck 100 to hold a substrate W during processing. Add 9 200837509 = can be an electrostatic chuck for the chuck 100. After the substrate w is loaded on the heater holder ' The substrate w is heated to a predetermined processing temperature during processing. The heater chuck 10() will be described in detail later. He provides the shower head 16 to inject plasma toward the top surface of the heater chuck 100. The power is supplied to the heater 1 〇〇. That is, the power supply 18 is supplied to the preset amount of bias power (bias p_〇 for the deer? heater chuck 100. ~ Ο υ plasma Zhao part 2G at The plasma generating device provides the family head 16. The plasma generating portion 2G is a remote plasma generating device. The electric shock generating portion 2G also includes a magnetron f 22, a waveguide line 24, and a body supply line 26 The magnetron 22 produces microwaves for generating water during processing. Waveguides 24 are provided. It will be produced at the magnetron 22: the microwave is directed to the gas supply pipe 26. The gas supply pipe 26 supplies the reaction gas via _ ^ = and generates electricity by the microwave generated at the opposite side of the waveguide line 26 . Between the regions, the shower head 16 of the π ^ J 1 产生 generated at the plasma generating portion 20 is generated to supply the pressure portion of the processing portion 1 供应 to the processing portion exhaust portion 30. 3. Including the main exhaust line 3 heart 2: the milk line 32. As illustrated in Figure 5 'two sub-exhaust ^ :: Ϊ vents - and connected to the main exhaust pipe = official line 32 The gas is left in the main line, and the line 34 is discharged to the outside. The county (not shown on the t Μ, thereby forcibly discharging the gas inside the outer casing 12 to reduce = 10 Ο L) 200837509 The internal pressure of the shell 12 . Referring to Fig. 5, the processing using the processing module 6 will be described below. 1 When the process starts, the wafer w is loaded on the wafer by the wafer population: "on the disk 00. The heater chuck 100 will be loaded. The wafer is loaded with the following: The power supply 18 supplies the bias power to the heater hail. The internal gas is forcibly discharged to reduce the internal force to the preset dust force. The internal friction of the outer casing 12 is shouted, and the power supplied to the heater chuck is just offset. The material surface is 12 (10) The millidomain (four) power ΐ • watt #1' discharge phenomenon can occur inside the outer casing 12 during processing. From the right. The outer 12 < internal processing pressure and temperature meet the preset strip 'Bei 1 plasma generating portion 20 Plasma and supplying the plasma to the processing portion r隹 and the exhaust portion 3〇 maintains the internal pressure of the processing portion 10 at a conventional magnetron of the plasma generating portion 2 () to generate microwaves, and The wave line 24 applies microwaves to the domain supply tube % supply = two gas to produce the electricity. When the electrical equipment is passed through the coffee particles (such as 'electronics or ions'), the neutron particles (such as radicals) are only supplied by the cluster head 16 and are supplied to the neutron particles (such as radicals). Substrate w. This oxygen will retain the photoresist at the substrate. The exhaust portion 3 is supplied to the plasma in the outer casing 12 and the reaction gas in a conventional flow rate to maintain the internal pressure of the outer layer 12 . If the photoresist on the surface of the wafer is removed, then W: W is taken out by wafer population = 12 after the self-supporting component is unloaded. 』田外钹 200837509 Figure 6 is a diagram of the heater chuck 1〇〇 illustrated in Figure 5. The heater loo includes a support plate 120, a wafer guide 14A, and a plurality of lift gamma cups 160. The support plate 12A has a disk-shaped plate having a diameter larger than the diameter of the wafer w. The wafer w is placed on the support plate 12A. The wafer guide 140 is placed at the edge of the top surface of the support plate 12 and protrudes from the top surface of the support plate 120. As described above, the wafer W in the in-position state is placed inside the wafer guide 140 provided at the edge of the support plate 120. A plurality of ejection rams 160 can be passed through the support plate 120 to rise above the support plate 120. The ejector pin 16 is raised to load the wafer onto the support, 120 lifts a wafer w, and lowers the ejector pin 9 (9) to place the loaded wafer W on the support plate 12 On the top. The lift shaft (with shaft) 162 is coupled to the lower end of the ejector pin 16 and is raised by the driver 164. w Mounts the heated state 122 inside the support plate 120 and buryes a plurality of senses = two 24 in the support plate 120. The heater 122 heats the support plate 120 using externally supplied power. The sensor 124 instantly senses the temperature of the support plate 12A. Since the sensor 124 can sense the temperature of the buried portion thereof, a temperature corresponding to the position of the support plate 12 can be detected. Alternatively, only one sensor 124 can be installed. Transmitting the temperature detected by the sensor 124 to the temperature controller (8), if the temperature of the & plate 120 reaches a preset temperature, the temperature controller i disconnects the power supplied to the heater 122, So that the support plate 120 is maintained at a preset temperature. Display portion 200 is provided to display the temperature detected by 12 200837509 sensor 124. The temperature controller 300 is connected to the control of the main controller to operate the heater 122. Use: p = system: 7. The processing temperature for setting the temperature φ ^ of the support plate 12G is transmitted to the temperature controller 300. Temperature: Control 2: The set temperature is controlled to control the sensor 124 and the heater can be connected to the main control cry 7 according to the set alarm element 400. System: report the component in the emergency "time to the outside" control Figure 7 to illustrate the support of the ear map, and Figure 8 shows that the gentleman machine is called fake / dish, cross Flow chart. Detection method of position (10) detection method. As illustrated in the heater clip illustrated in Fig. 6, in the case where the wafer W is placed on the slab GO, the support is inverted 120 and maintained in a heated state. As described in Fig. 2, the wafer W is loaded on the heating L. ^ (S10) via the wafer inlet 12 & As illustrated in Figure 6, the loaded wafer 16 / raised support spigot (suPP 〇 pin pin) 160. The support ejector _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Since the temperature of w is lower than the temperature of the support plate 120, the degree of the support plate A may be slightly lowered due to heat transfer between the wafer holding plates 120. However, the temperature variation of the support plate 12Q is minute because the Japanese yen W is continuously spaced apart from the support plate 12A. Above, the support ejector pin 6丨 is placed after the wafer W is placed behind the support plate 120 as the temperature of the support plate 120 (S20). If the wafer W is placed on the support plate 120, the heat is actively transferred between the wafer % and the support plate 12A and the support plate 12G is cooled to a certain temperature due to the crystal UJW. However, since the support plate 120 is heated by the heater 22, the temperature of the support plate 120 rises with the passage of time. In Fig. 7, a curve drawn by a solid line indicates a temperature change of the support plate 120 when the wafer W is placed in a predetermined position of the support plate 12''. After the support plate 12 is cooled to approximately 247 degrees Celsius, the support plate 120 is heated to 25 degrees Celsius by the heater 122. The curve drawn by the broken line indicates the temperature change of the support plate when the wafer w is placed outside the preset position range of the support plate 12A. As illustrated in Figures 2A and 2B, the wafer W can be placed on the wafer guide 14A due to the erroneous operation of the transfer robot. In this case, since one side of the wafer W is spaced apart from the support plate 12 by the wafer guide turns, active heat transfer cannot occur between the wafer W and the support plate 120. This situation is because the amount of heat transfer is proportional to the contact area. Therefore, when the wafer w is placed outside the preset position range, the support plate 12 is not cooled to 247 degrees Celsius, and the crucible is reheated after the cold portion to a temperature higher than 247 degrees Celsius. That is, the temperature change ΔΤ in the case where the wafer W is placed in the preset position is larger than the temperature change δτ2 in the case where the wafer w is placed outside the preset position range. The measured temperature is compared with a reference temperature to detect whether the wafer W is placed in a preset position (S30). The reference temperature is a value for detecting whether the wafer W is placed in a predetermined position and having a allowable range of the measured temperature of the self-supporting plate 120 when the wafer is placed in the preset position. The reference temperature is stored in the database unit 7a 14 200837509 of the main controller 7, and the processing unit 7b of the main controller 7 compares the measured temperature with the reference μ degree to detect whether the wafer W is placed or not. In the preset position. In the case where the measured temperature is within the reference temperature range, the processing unit determines that the wafer W is placed in the preset position. On the other hand, in the case where the measured temperature is outside the reference temperature range, the processing unit 7b determines that the wafer W is placed outside the preset position range. The allowable range is determined based on the accuracy required by the user. There are various methods for comparing the measured temperature to a reference temperature. Two of the comparison methods will now be described below. A comparison method is: after measuring the minimum temperature of the support plate 12, the measured minimum temperature is compared with a reference temperature: also, as illustrated in FIG. 7, when the wafer w is placed on the preset In the position of the support plate, the minimum temperature of the support plate 120 is 247 degrees Celsius. Assuming the allowable range is 1 degree Celsius, the reference temperature is 246 degrees Celsius to 248 degrees Celsius. Therefore, in the case where the I-tested minimum temperature of the support plate 120 is within the reference temperature range, it can be determined that the wafer W is placed in the preset position. Another comparison method is to compare the measured temperature with the reference temperature after measuring the temperature of the support plate 120 after a predetermined time lapse. For example, assuming that the measured temperature of the support plate 120 is 247 degrees Celsius and the allowable range is 1 degree Celsius at t1 indicating the preset time, the reference temperature is 246 degrees Celsius to 248 degrees Celsius. Therefore, in the case where the temperature measured after the elapse of the preset time t1 is within the reference temperature range, it can be determined that the wafer W is placed in the preset position. When the wafer W is placed outside of the preset position range, the main controller 7 15 200837509 operates the component 400 to generate an alarm (S40). The alert allows the operator to know the facts of life. The main controller 7 temporarily suspends the <ration (S5G)' performed by the entire system and the operator can temporarily process the error by processing the error. π, as described above, the position of the wafer W placed on the support plate 120 is given by =. In the case where the crystal m w is placed outside the preset position range, a report is generated to warn the user of the position error. Outside of A, when wafer W is placed in the pre-. When the position is outside the range, the entire process is temporarily suspended to prevent processing errors caused by the position error. As explained so far, it is possible to detect whether the wafer is placed in the pre-position of the support plate. In particular, it is possible to easily detect whether the wafer is placed in a preset position without the installation-independent detection. When the circle is placed outside the preset position range, an alarm is generated to inform the operator that there is an error in the position and temporarily suspend the entire process to prevent a processing error. Although the invention has been described in connection with the embodiments of the invention illustrated in the drawings, the invention is not limited thereto. It will be apparent to those skilled in the art that various alternatives, modifications and variations can be made without departing from the scope and spirit of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A and Fig. 1A illustrate wafers normally mounted on a hot plate. Figure 2 and Figure 2 illustrate the wafers that are abnormally loaded on the hot plate. Figure 3 is a diagram of a typical semiconductor manufacturing apparatus. Figure 4 is a diagram of the buffer chamber illustrated in Figure 3. 16 200837509 Figure 5 is a diagram of the processing module illustrated in Figure 3. Figure 6 is a diagram of the heater plate illustrated in Figure 5. Fig. 7 is a graph showing changes in temperature of the support plate illustrated in Fig. 6. * Fig. 8 is a view showing the flow of the substrate position detecting method according to the present invention. [Main component symbol description] 1 : Wafer transfer system f 2: buffer chamber 3 a : cooling platform 3 b : cooling platform 4 a : alignment platform 4 b : alignment platform 5 : transfer module 6 : processing module 7 : main Controller c, 7a: database unit 7b: processing unit '10: processing portion 12: housing 12a: substrate inlet 12b: exhaust port 16: shower head 18: power supply 17 200837509 20 plasma generating portion 22 magnetron officer 24 waveguide line 26 gas supply line 30 exhaust portion 32 times exhaust line 34 main exhaust line 100: heater chuck / support member 120: support plate 122: heater 124: sensor 140: wafer guide 160 : ejector pin / support ejector 162 : lifting shaft 164 : driver 200 : display portion 300 : temperature controller 400 : alarm element W : wafer / substrate 18