200834976 九、發明說明： 【發明所屬之技術領域】 本發明係與發光二極體有關，特別是指一種增加發光 二極體的發光效率之製程方法。 、5【先前技術】 , 隨著半導體製程能力不斷的提升，以及高發光效率與 尚焭度的發光元件不斷為生活所需，發光二極體晶片已逐 漸走上舞臺，其中尤以倒裝式覆晶（flip_chip)封裝技術所 製成的發光二極管|具有高散熱性與高功率的優點，於是 ⑽成為LED發光元件的主流，如第六騎示即為以覆晶封裝 之一發光二極管丨，其中LED晶片1〇結構與傳統的發光二 極體結構相同，但晶片模組化結構確不盡相同，由於所使 用的覆晶模組11以具有高散熱效果的熱沈晶片為基底，使 LED晶片10在高電流條件下驅動也不會有餘熱，所以晶片 15面積可以加大至Immxlmm，進而操作於300至500mA之 大電流條件，而可達到一瓦的操作功率。 然由於LED晶片1〇需藉由n型及p型之雙電極ιοί、 102與下方覆晶模組η之銲墊ho倒裝接合，而光電效應 所產生的光子為經由上方的基底1〇〇透出以發光，故部分 20光子不但在經過基底100時受基底100材料吸收，並因在 出光介面不斷發生介面反射現象使更多的光子受基底1〇〇 材料吸收，因而降低光電反應的發光效率，所以如何於具 有降低熱阻的覆晶LED結構提升其發光效率，實為LED 產品製造業者所面臨的一大考驗。 4 200834976 【發明内容】 因此，本發明之主要目的乃在於提供一種降低光子在 發光二極體内被吸收的機會，以增加其發光效率。 5 為達成前揭目的，本發明所提供之一種提高發光二極 體売度之製作方法係有以下之形成步驟： 於一基板上以半導體長晶方法形成一半導體層； 於該半導體層上製成一發光層，該發光層係為光電反 應產生光子之區域； 1〇 於該發光層上形成一電極層； 去除該基板使裸露該半導體層； 於該半導體層上形成特定圖案之一晶體表面，使該發 光層所產生之光子入射至該晶體表面之入射角係小於光^ 在該半導體層内之全反射臨界角。 15 故本發明所提供之該發光二極體較之於習用之結構可 使光子不至於在該晶體表面發生全反射而為内部材料所吸 收’可具有高發光效率以致高亮度的特性。 【實施方式】 20 以下，茲配合若干圖式列舉一較佳實施例，用以對本 發明之組成構件及功效作進一步說明，其中所用各圖式之 簡要說明如下： 第一圖係本發明第一較佳實施例所提供之製程結構示 5 200834976 意圖，表示該基板及N型半導體層之製成結構； 第二圖係為上述第一較佳實施例所提供之製程結構示 思圖，表示形成該發光層及歐姆接觸電極之結構； 第三圖係為上述第一較佳所提供該發光二極體之結構 5示意圖； 第四圖係為本發明第二較佳實施例所提供該發光二極 體之結構示意圖； 第五圖係為本發明第三較佳實施例所提供之製程結構 示意圖； 1〇 第六圖係上述第三較佳實施例所提供該垂直式發光二 極體之結構示意圖； 第七圖係為本發明第四較佳實施例所提供垂直式發光 二極體之結構示意圖； 15 响參閱如第一至第三圖所示，為本發明第一較佳實施 例所提供-發光二極體2之製作方法，係具有下列之製 步驟： 广請配合第-圖參照，備製一基板21，該基板21可為藍 寶石、GaAs或矽等與半導體光電材料有良好接合性的材 〇貝’以減少後續半導體材料蠢晶製程的晶格缺陷·，於該基 板上以GaN或A1GaInP等基底材料以磊晶製程形成 6 200834976 型半導體層22’再於該N型半導體層22定義一捧雜區22〇 及-歐姆接觸區22卜以]s[型掺雜材料於該摻雜區22〇形 成- N型區222，未摻雜該N型摻雜材料之下 域 形成為一未掺雜區223。 5 請配合第二圖參照，於該N型區222上形成一活化層 23，再於該活化層23上以對應於該N型半導體層22之材 料以正型摻雜材料形成一 P型半導體層24 ,其中該活化層 23係為與該N型區222及p型半導體層24有良好鍵結性 及低能隙的半導體光電材料，如本實施例所提供之hGaN ίο材質，因此形成該N型區222及P型半導體層24之間的量 子井，使自該N型區222及P型半導體層24所躍遷之電子 電洞容易於該活化層23發生電子電洞結合反應而產生光子 以發光，因此該N型區222、該活化層23以及該p型半導 體層24則形成該發光二極體2主要之一發光層2〇。 15 接者於該P型半導體層24上製作一電極層25，可為 ΠΌ、Ru〇2、Zn0或Ni〇等與該p型半導體層24有良好接 合性，且兼具良好導電性及可透光性的透明電極所製成， 並於該電極層25表面鍍上一反射膜251，可為鋁、銀、鉑、 絡、銦、鎢或金等具良好導電性及反射性的金屬材質，以 2〇使光電反應所產生的光子不會自該電極層25表面透出，而 可朝該發光層20的方向反射，並使該電極層25可藉以傳 遞外加電位至該p型半導體層24。 接著於該反射膜251上製作一正電極201，於該N塑 半導體層22之歐姆接觸區221上製作一負電極202，以作 7 200834976 為該發光二極體2與外加電位之歐姆接觸。 接者於該發光一極體2之下表面，亦即該基板21表面 製作一保護層26，可為光阻材料、Si02、Si3N4或金屬鎳 等材質所製成，然後利用微影製程形成特定之光刻圖案； 5並藉由電感偶合式電漿反應離子刻蝕（ICP-RIE)等非等向 性乾蝕刻的方法配合反應氣體（如氯氣、三氯化硼及甲烷 等）選擇性的姓刻該基板21表面，達到使該基板21表面 成光子晶體結構的效果；最終去除該保護層26殘餘的部 分，使該基板21表面形成光子晶體結構之一晶體表面 ίο 210，可使該發光層20發生光電反應所產生的光子朝該晶 體表面210行進時，光子入射至該晶體表面21〇之入射角 係小於光子在該基板21内之全反射臨界角，因此製成如第 三圖所示之該發光二極體2。 本實施例所提供之該發光二極體2係藉由其上表面之 is該正電極201及負電極202與習用之覆晶模組u電性連 接，得以獲得外加電壓以分別提供該p型半導體層24及該 N型區222產生光電反應所需的外加電場，而當光電反應 所形成之光子朝該電極層25行進時，受到該反射膜251的 反射則轉向朝該晶體表面21〇行進，故所有之光子可朝該 2〇晶體表面210透出’且由於光子入射至該晶體表面之入射 角係小於在該基板21内之全反射臨界角，可使不至於在該 晶體表面210發生全反射而為該基板21二次吸收，故較之 於習用之發光二極體結構更有效降低了光子受基板材料的 吸收現象，因此本發明所提供之該發光二極體2可具有高 8 200834976 發光效率以致高亮度的特性。 當然若為更有效降低光子受材料吸收，本發明則提供 製成如第四圖所示第二較佳實施例之一發光二極體3，與上 述實施例所提供該發光二極體2之差異在於： 5 該P型半導體層24上製作完該電極層25後，先於該 電極層25表面經過上述形成光子晶體結構效果的製作處理 為一晶體表面253,使光子入射至該晶體表面253之入射角 係小於光子在該電極層25内之全反射臨界角，再於該晶體 表面253上鍍一反射膜254,之後才於該反射膜254上形成 ⑺該正電極2〇1，因此使光子受該反射膜254反射朝向該發光 層20的入射角同樣小於光子在該電極層25内之全反射臨 界角，使光子不至於該電極層25中發生介面全反射現象而 反覆進行如共振般的全反射效應以致被材料吸收。 再者，先將該基板21以研磨拋光、化學蝕刻或雷射剝 15離等方式去除，使該N型半導體層22之下表面外露，再將 該N型半導體層22之下表面經過上述形成光子晶體結構效 果的製作處理為一晶體表面30,可使光子朝該晶體表面3〇 行進時，光子入射至該晶體表面30之入射角係小於光子在 該N型半導體層22内之未摻雜區223的全反射臨界角，且 20光子不致被基板材料吸收，更有效提供該發光二極體3高 亮度的特性。 另請參閱如第五至第六圖所示為本發明所提供第三較 佳實施例之一垂直式發光二極體4之製成結構，係可使用 與上述實施例所提供類似之製成結構有相同之材質特性， 9 200834976 並具有以下步驟： 於一基板41上製作一 N型半導體層42 ; 於該N型半導體層42上以N型摻雜材料摻雜 n 型區420，未摻雜該N雜轉料 5 -未掺雜區421; 卜㈣成為 - 於該N型區420上形成一活化層幻，再於該活化層43 上以對應於該N型半導體層42之材料以正型摻雜材料形成 一 P型半導體層44’因此該N型區42〇、該活化層43以及 該P型半導體層44則形成進行光電反應之一發光層4〇 . 1〇 於該P型半導體層44上製作—電極層45,並^該電極 層45表面經過上述形成光子㈣結構效果的製作處理為一 晶體表面451，使光子入射至該晶體表面451之入射角係小 於光子在該電極層45内之全反射臨界角，再於該晶體表面 451鍍上一反射膜452 ’以使光電反應所產生的光子受該反 I5射膜452反射後直接入射至該發光層4〇内； 將該基板41以研磨拋光、化學蝕刻或雷射剝離等方式 ‘ 去除，並將該N型半導體層42之未摻雜區421以反應性離 • 子敍刻方式去除，使該N型區420表面外露； 隶後於該N型區420表面上經過上述形成光子晶體結 2〇構效果的製作處理為一晶體表面422，再分別於該反射膜 452及該晶體表面422上分別形成一正、負電極4〇1、402， 則製成如第六圖所示之該垂直式發光二極體4。 因此本實施例所提供之該垂直式發光二極體4,除了具 有上述實施例所提供之功效外，並因將非為光電反應產生 200834976 光子的該未摻雜區421去除，降低光子於該未摻雜區421 中被該N型半導體層42之材料所吸收，更有效增加發光二 極體的發光效率，使該垂直式發光二極體4更有高亮度的 特性。 5 當然為更有效降低光子受材料的吸收現象，本發明更 提供如第七圖所示第四較佳實施例之一垂直式發光二極體 5，較之於上述該垂直式發光二極體4者，係為省去該反射 膜452之製作，最後於各該晶體表面451、422上分別製作 該正、負電極401、402，因此形成可雙面發光之該垂直式 發光二極體5，亦使降低光子受該p型電極層45之材料所 吸收，更有效增加發光二極體的發光效率。 唯，以上所述者，僅為本發明之較佳可行實施例而已， 故舉凡應用本發明說明書及申請專利範圍所為之等效結構 變化，理應包含在本發明之專利範圍内。200834976 IX. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode, and more particularly to a process method for increasing the luminous efficiency of a light-emitting diode. 5, [Prior Art], with the continuous improvement of semiconductor process capability, and the high luminous efficiency and the radiance of the luminescent components, the LEDs have gradually stepped onto the stage, especially in flip-chip. The light-emitting diode made by flip-chip packaging technology has the advantages of high heat dissipation and high power, so (10) becomes the mainstream of LED light-emitting components, such as the sixth riding device, which is a light-emitting diode 覆 in a flip chip package. The structure of the LED chip has the same structure as the conventional LED structure, but the modular structure of the chip is not the same, since the flip chip module 11 used is based on a heat sink wafer with high heat dissipation effect, and the LED is made. The wafer 10 is driven without high residual heat under high current conditions, so the area of the wafer 15 can be increased to 1 mm x 1 mm, and then operated under a large current condition of 300 to 500 mA, and an operating power of one watt can be achieved. However, since the LED chip 1 is flip-chip bonded by the n-type and p-type double electrodes ιοί, 102 and the underlying flip chip module η, the photon generated by the photoelectric effect is via the upper substrate 1〇〇. The light is emitted, so that part of the 20 photons are absorbed by the substrate 100 not only when passing through the substrate 100, but also because more and more photons are absorbed by the substrate 1 by the interface reflection phenomenon in the light-emitting interface, thereby reducing the photoelectric reaction. Efficiency, so how to improve the luminous efficiency of flip-chip LED structure with reduced thermal resistance is a big test for LED product manufacturers. 4 200834976 SUMMARY OF THE INVENTION Accordingly, it is a primary object of the present invention to provide an opportunity to reduce the absorption of photons in a light-emitting diode to increase its luminous efficiency. 5 In order to achieve the foregoing object, a method for improving the brightness of a light-emitting diode is provided by the following steps: forming a semiconductor layer on a substrate by a semiconductor crystal growth method; and forming a semiconductor layer on the semiconductor layer Forming a light-emitting layer, wherein the light-emitting layer is a region for photo-reactive photons; forming an electrode layer on the light-emitting layer; removing the substrate to expose the semiconductor layer; forming a crystal surface of a specific pattern on the semiconductor layer The incident angle of the photons generated by the luminescent layer to the surface of the crystal is less than the critical angle of total reflection of the light in the semiconductor layer. Therefore, the light-emitting diode provided by the present invention can prevent photons from being totally reflected on the surface of the crystal to be absorbed by the internal material, which can have high luminous efficiency and high brightness. [Embodiment] Hereinafter, a preferred embodiment will be described with reference to a plurality of drawings for further explaining the components and functions of the present invention. The following is a brief description of the drawings: The process structure shown in the preferred embodiment is shown in FIG. 5 200834976, which is intended to show the structure of the substrate and the N-type semiconductor layer. The second figure is a schematic diagram of the process structure provided by the first preferred embodiment, indicating formation. The structure of the illuminating layer and the ohmic contact electrode; the third figure is a schematic diagram of the structure 5 of the illuminating diode provided by the first preferred embodiment; and the fourth figure is provided by the second preferred embodiment of the present invention. FIG. 5 is a schematic view of a process structure provided by a third preferred embodiment of the present invention; FIG. 6 is a structure of the vertical light-emitting diode provided by the third preferred embodiment; 7 is a schematic structural view of a vertical light-emitting diode according to a fourth preferred embodiment of the present invention; 15 is shown in the first to third figures, which is the first comparison of the present invention. The method for fabricating the light-emitting diode 2 provided by the preferred embodiment has the following steps: 1. Please refer to the reference of the first drawing to prepare a substrate 21 which can be sapphire, GaAs or germanium and the like. a material having a good bond material to reduce the lattice defects of the subsequent semiconductor material, and forming a semiconductor layer 22' on the substrate by epitaxial processing using a substrate material such as GaN or AlGaInP. The N-type semiconductor layer 22 defines a doped region 22 and an ohmic contact region 22 s [type dopant material is formed in the doped region 22 - - N-type region 222, undoped with the N-type dopant material The lower domain is formed as an undoped region 223. 5, in conjunction with the second figure, an active layer 23 is formed on the N-type region 222, and a P-type semiconductor is formed on the active layer 23 with a positive doping material corresponding to the material of the N-type semiconductor layer 22. The layer 24, wherein the active layer 23 is a semiconductor optoelectronic material having a good bonding property and a low energy gap with the N-type region 222 and the p-type semiconductor layer 24, such as the hGaN ίο material provided in the embodiment, thus forming the N The quantum well between the pattern region 222 and the P-type semiconductor layer 24 allows the electron holes from the N-type region 222 and the P-type semiconductor layer 24 to be easily generated by the electron-hole bonding reaction of the active layer 23 to generate photons. The light is emitted, so the N-type region 222, the active layer 23, and the p-type semiconductor layer 24 form a light-emitting layer 2 of the light-emitting diode 2. 15 is formed on the P-type semiconductor layer 24 to form an electrode layer 25, which may have good adhesion to the p-type semiconductor layer 24 such as ruthenium, Ru〇2, Zn0 or Ni〇, and has good conductivity and can be It is made of a transparent transparent electrode, and a reflective film 251 is plated on the surface of the electrode layer 25. It can be a metal material with good conductivity and reflectivity such as aluminum, silver, platinum, cobalt, indium, tungsten or gold. The photon generated by the photoelectric reaction does not permeate from the surface of the electrode layer 25, but can be reflected toward the light emitting layer 20, and the electrode layer 25 can transmit an applied potential to the p-type semiconductor layer. twenty four. Then, a positive electrode 201 is formed on the reflective film 251, and a negative electrode 202 is formed on the ohmic contact region 221 of the N-plastic semiconductor layer 22 to make ohmic contact of the light-emitting diode 2 with an applied potential as 7200834976. The substrate is formed on the lower surface of the light-emitting body 2, that is, the surface of the substrate 21 is made of a protective layer 26, which can be made of a photoresist material, SiO 2 , Si 3 N 4 or metal nickel, and then formed by a lithography process. a lithographic pattern; 5 and an isotropic dry etching method such as inductively coupled plasma reactive ion etching (ICP-RIE), which is selectively used in combination with a reaction gas (such as chlorine gas, boron trichloride, methane, etc.) The surface of the substrate 21 is engraved to achieve the effect of forming the surface of the substrate 21 into a photonic crystal structure; finally, the remaining portion of the protective layer 26 is removed, so that the surface of the substrate 21 forms a crystal surface of the photonic crystal structure ίο 210, which enables the luminescence When the photon generated by the photoreaction of the layer 20 travels toward the crystal surface 210, the incident angle of the photon incident on the crystal surface 21 is smaller than the total reflection critical angle of the photon in the substrate 21, thus being fabricated as shown in the third figure. The light-emitting diode 2 is shown. The light-emitting diode 2 provided in this embodiment is electrically connected to the conventional flip-chip module u by the upper surface of the positive electrode 201 and the negative electrode 202, thereby obtaining an applied voltage to respectively provide the p-type. The semiconductor layer 24 and the N-type region 222 generate an applied electric field required for the photoelectric reaction, and when the photons formed by the photoelectric reaction travel toward the electrode layer 25, the reflection by the reflective film 251 is turned toward the crystal surface 21 Therefore, all photons can be permeable to the surface 210 of the 2 〇 crystal and the incident angle of the photon incident on the crystal surface is smaller than the critical angle of total reflection in the substrate 21, so that the crystal surface 210 does not occur. The total reflection is the second absorption of the substrate 21, so that the photon is absorbed by the substrate material more effectively than the conventional light-emitting diode structure. Therefore, the light-emitting diode 2 provided by the present invention can have a high height of 8 200834976 Luminous efficiency and high brightness. Of course, if the photon is absorbed by the material more effectively, the present invention provides a light-emitting diode 3 according to the second preferred embodiment shown in FIG. 4, which is provided with the light-emitting diode 2 provided in the above embodiment. The difference lies in: 5 after the electrode layer 25 is formed on the P-type semiconductor layer 24, the surface of the surface of the electrode layer 25 is subjected to the formation of the photonic crystal structure to form a crystal surface 253, so that photons are incident on the crystal surface 253. The incident angle is smaller than the total reflection critical angle of the photon in the electrode layer 25, and a reflective film 254 is plated on the crystal surface 253, after which the positive electrode 2〇1 is formed on the reflective film 254, thus The incident angle of the photon reflected by the reflective film 254 toward the luminescent layer 20 is also smaller than the critical angle of the total reflection of the photon in the electrode layer 25, so that the photon does not undergo the total reflection of the interface in the electrode layer 25, and the resonance is repeated. The total reflection effect is absorbed by the material. Furthermore, the substrate 21 is first removed by grinding, chemical etching or laser stripping, so that the lower surface of the N-type semiconductor layer 22 is exposed, and the lower surface of the N-type semiconductor layer 22 is subjected to the above formation. The photonic crystal structure effect is processed into a crystal surface 30, and when the photon is caused to travel toward the crystal surface 3, the incident angle of the photon incident on the crystal surface 30 is smaller than the undoped photon in the N-type semiconductor layer 22. The critical angle of total reflection of the region 223, and 20 photons are not absorbed by the substrate material, and the characteristics of the high luminance of the light-emitting diode 3 are more effectively provided. Please refer to the structure of the vertical light-emitting diode 4 of the third preferred embodiment of the present invention as shown in the fifth to sixth figures, which can be made similar to that provided by the above embodiment. The structure has the same material characteristics, 9 200834976 and has the following steps: an N-type semiconductor layer 42 is formed on a substrate 41; an n-type region 420 is doped with an N-type doping material on the N-type semiconductor layer 42, undoped Miscellaneous N-doped material 5 - undoped region 421; Bu (4) becomes - an activation layer is formed on the N-type region 420, and then the activation layer 43 is made of a material corresponding to the N-type semiconductor layer 42 The positive doping material forms a P-type semiconductor layer 44'. Therefore, the N-type region 42A, the active layer 43 and the P-type semiconductor layer 44 form a light-emitting layer 4 for performing photoelectric reaction. The electrode layer 45 is formed on the semiconductor layer 44, and the surface of the electrode layer 45 is processed into a crystal surface 451 through the effect of forming the photon (4) structure, so that the incident angle of the photon incident on the crystal surface 451 is smaller than that of the photon at the electrode. The critical angle of total reflection in layer 45, which is then plated on the surface of the crystal 451 The upper reflective film 452' is such that photons generated by the photoelectric reaction are reflected by the anti-I5 film 452 and directly incident into the light-emitting layer 4; the substrate 41 is polished, chemically etched, or laser-peeled. Removing, and removing the undoped region 421 of the N-type semiconductor layer 42 in a reactive ion-removal manner to expose the surface of the N-type region 420; and forming the photons on the surface of the N-type region 420 The crystal structure 2 is formed into a crystal surface 422, and a positive and negative electrode 4〇1 and 402 are respectively formed on the reflective film 452 and the crystal surface 422, respectively, and is formed as shown in FIG. The vertical light-emitting diode 4 is. Therefore, the vertical light-emitting diode 4 provided in this embodiment has the effect of the above embodiments, and removes the undoped region 421 which is not photo-generated to generate 200834976 photons, thereby reducing photons. The undoped region 421 is absorbed by the material of the N-type semiconductor layer 42 to more effectively increase the luminous efficiency of the light-emitting diode, and the vertical light-emitting diode 4 has a higher luminance characteristic. 5 of course, in order to more effectively reduce the absorption phenomenon of the photon-receiving material, the present invention further provides a vertical light-emitting diode 5 according to the fourth preferred embodiment shown in FIG. 7 , which is compared with the above-mentioned vertical light-emitting diode. In the fourth embodiment, the reflective film 452 is omitted, and the positive and negative electrodes 401 and 402 are respectively formed on the crystal surfaces 451 and 422, thereby forming the vertical light-emitting diode 5 capable of double-sided illumination. The photon is also absorbed by the material of the p-type electrode layer 45, and the luminous efficiency of the light-emitting diode is more effectively increased. It is to be understood that the above-described embodiments are merely preferred embodiments of the present invention, and the equivalent structural changes of the present invention and the scope of the claims are intended to be included in the scope of the present invention.
11 200834976 【圖式簡單說明】 第一圖係本發明第一較佳實施例所提供之製程結構示 意圖，表示該基板及N型半導體層之製成結構； 第二圖係為上述第一較佳實施例所提供之製程結構示 —5意圖，表示形成該發光層及歐姆接觸電極之結構； ' 第二圖係為上述第一較佳所提供該發光二極體之結構 φ 示意圖； 第四圖係為本發明第二較佳實施例所提供該發光二極 體之結構示意圖； 10 第五圖係為本發明第三較佳實施例所提供之製程結構 示意圖； 第六圖係上述第三較佳實施例所提供該垂直式發光二 極體之結構示意圖； _ 第七圖係為本發明第四較佳實施例所提供垂直式發光 ，15二極體之結構示意圖； . 第八圖係為習用以覆晶技術封裝之發光二極管之結構 示意圖。 12 201、401正電極 21、41基板 200834976 【主要元件符號說明】 2、3發光二極體 4、5垂直式發光二極體 20、40發光層 202、402負電極 210、253、30、451、422 晶體表面 22、42 N型半導體層 221歐姆接觸區 223、421未摻雜區 24、44 P型半導體層 251、254、452 反射膜 220摻雜區 222、420 N 型區 23、43活化層 25、45電極層 26保護層11 200834976 BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a schematic diagram of a process structure provided by a first preferred embodiment of the present invention, showing the structure of the substrate and the N-type semiconductor layer; The process structure shown in the embodiment is shown in FIG. 5 as a structure for forming the light-emitting layer and the ohmic contact electrode; 'the second figure is a schematic diagram of the structure φ of the light-emitting diode provided by the first preferred embodiment; The schematic diagram of the structure of the light emitting diode provided by the second preferred embodiment of the present invention; 10 is a schematic diagram of a process structure provided by the third preferred embodiment of the present invention; A schematic diagram of the structure of the vertical light-emitting diode provided by the preferred embodiment; _ seventh is a schematic diagram of the vertical light-emitting, 15-diode structure provided by the fourth preferred embodiment of the present invention; A schematic diagram of the structure of a light emitting diode packaged by a flip chip technology. 12 201, 401 positive electrode 21, 41 substrate 200834976 [main element symbol description] 2, 3 light-emitting diode 4, 5 vertical light-emitting diode 20, 40 light-emitting layer 202, 402 negative electrode 210, 253, 30, 451 422 crystal surface 22, 42 N-type semiconductor layer 221 ohmic contact region 223, 421 undoped region 24, 44 P-type semiconductor layer 251, 254, 452 reflective film 220 doped region 222, 420 N-type region 23, 43 activation Layer 25, 45 electrode layer 26 protective layer
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