TW200834242A - Positive resist composition and method for forming resist pattern - Google Patents

Positive resist composition and method for forming resist pattern

Info

Publication number
TW200834242A
TW200834242A TW96133270A TW96133270A TW200834242A TW 200834242 A TW200834242 A TW 200834242A TW 96133270 A TW96133270 A TW 96133270A TW 96133270 A TW96133270 A TW 96133270A TW 200834242 A TW200834242 A TW 200834242A
Authority
TW
Taiwan
Prior art keywords
alkyl group
lower alkyl
resist composition
positive resist
acid
Prior art date
Application number
TW96133270A
Other languages
Chinese (zh)
Other versions
TWI363933B (en
Inventor
Yohei Kinoshita
Takeshi Iwai
Toshiyuki Ogata
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200834242A publication Critical patent/TW200834242A/en
Application granted granted Critical
Publication of TWI363933B publication Critical patent/TWI363933B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A positive resist composition includes a resin component (A) which exhibits increased alkali solubility under the action of acid, and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a structural unit (a1) represented by a general formula (I): (wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; R1 represents a hydrogen atom or a lower alkyl group; and n represents an integer from 0 to 3).
TW96133270A 2006-09-11 2007-09-06 Positive resist composition and method for forming resist pattern TWI363933B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006246131A JP2008065282A (en) 2006-09-11 2006-09-11 Positive resist composition and resist pattern forming method

Publications (2)

Publication Number Publication Date
TW200834242A true TW200834242A (en) 2008-08-16
TWI363933B TWI363933B (en) 2012-05-11

Family

ID=39183588

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96133270A TWI363933B (en) 2006-09-11 2007-09-06 Positive resist composition and method for forming resist pattern

Country Status (3)

Country Link
JP (1) JP2008065282A (en)
TW (1) TWI363933B (en)
WO (1) WO2008032522A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI498324B (en) * 2010-11-30 2015-09-01 Tokyo Ohka Kogyo Co Ltd Resist composition, method of forming resist pattern, polymer compound, compound

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100591007B1 (en) * 2004-01-14 2006-06-22 금호석유화학 주식회사 Novel polymers and chemically amplified resists containing them
JP4651283B2 (en) * 2004-02-04 2011-03-16 ダイセル化学工業株式会社 Unsaturated carboxylic acid hemiacetal ester, polymer compound, and resin composition for photoresist
KR101115224B1 (en) * 2004-02-04 2012-02-14 가부시끼가이샤 다이셀 Unsaturated carboxylic acid hemiacetal ester, polymer, and resin composition for photoresist
JP4498939B2 (en) * 2005-02-01 2010-07-07 東京応化工業株式会社 Positive resist composition and resist pattern forming method
JP4937587B2 (en) * 2006-01-17 2012-05-23 東京応化工業株式会社 Positive resist composition for immersion exposure and method for forming resist pattern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI498324B (en) * 2010-11-30 2015-09-01 Tokyo Ohka Kogyo Co Ltd Resist composition, method of forming resist pattern, polymer compound, compound

Also Published As

Publication number Publication date
WO2008032522A1 (en) 2008-03-20
TWI363933B (en) 2012-05-11
JP2008065282A (en) 2008-03-21

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