200830578 九、發明說明： 【發明所屬之技術領域】 本發明是關於-種形成發光二極體（Ught e❿ D1〇de，LED)元件的方法，特別是一種對發光 表面及側面實施製㈣方法，對發光二極體轉表面及侧 面做抗反射處理可增加出光效率，對觸做高反 可 改善光的指向性。 _ 【先前技術】 -般發光二極體的發光效率受到内在發光效率和出光 f :(llght extraction efficiency)所支配；内在發光效 率才曰的是外界輸入能量與發光層產生光的比率，其主要與 疋件材料本身的蠢晶和結構有關，出光效率 所產生的光子能進入外界的比例。 仵内 β隨著磊晶技術的進步，内在發光效率可達80%以上，但 φ是發光二極體元件的出光效率卻仍然偏低，發光二極體除 了正面出光外，側面出光也佔有一定的比例，尤其是小尺 寸的發光二極體元件，其侧面的面積占總發光面積相對較 大’所以侧面出光占的比例也較大，但是，目前並無小尺 寸的發光二極體元件侧面進行任何處理，使得側面出光受 限，而降低發光二極體元件的總出光比率。 鑑於上述習知小尺寸發光二極體側面出光比率不高的 缺點，有必要提出一種形成發光二極體元件的方法，可對 200830578 -發光二極體元件側面實施製程，對發光二極艟元件表面及 側面做抗反射處理可增加出光效率，對侧面做高反射處理 可改善光的指向性。 【發明内容】 本發明的目的之一在於提供一種對發光二極體元件側 面貝知製程的方法’藉由切割發光二極體晶片成複數條發 光二極體晶條，於每兩條發光二極體晶條間夾一高度較低 • 的間隔層，以夾具夾集固定整排發光二極體晶條與間隔 層’就可對發光二極體元件的侧面實施製程。 本發明的另一目的在於提供一種形成高效率發光二極 體元件的方法，藉由上述對發光二極體元件侧面實施製程 的方法，對發光二極體元件露出的侧面及表面做抗反射處 理可增加出光效率，形成高效率發光二極體元件。 # 本發明的又一目的在於提供一種形成高指向性發光二 .極體元件的方法，藉由上述對發光二極體元件侧面實施製 私的方法，對發光二極體元件露出的側面做高反射處理可 改善光的指向性，形成高指向性發光二極體元件。 根據上述目的，本發明提供一種形成發光二極體元件 的方法，可對發光二極體元件侧面實施製程。首先，提供 一發光二極體晶片，該發光二極體晶片為包括發光二極體 磊晶層的基板，切割發光二極體晶片成複數條發光二極體 7 200830578 •晶條，然後，再於每兩條發光二極體晶條間夾一間隔層， 以夾具夾集固定整排發光二極體晶條與間隔層，其中間隔 層的南度低於發光二極體晶條的高度，之後再對發光二極 體晶條的表面及露出的侧面實施製程；對發光二極體晶條 表面及露出的侧面做抗反射處理，可避免發光二極 件 ，出的光全反射，增加出光效率；對發光二極體晶條元件 路出的侧面做鬲反射處理，可使發光二極體晶條元件往同 —方向出光，改善光的指向性。 【實施方式】 本發明一些實施例的詳細描述如下，然而，除了該詳 細描，述外，本發明還可以廣泛地在其他的實施例施行。亦 即’本發明的範圍不受已提出之實施例的限制，而應以本 發明提出之申請專利範圍為準。 再者，為提供更清楚的描述及更易理解本發明，圖示 •内各部份並沒有依照其相對尺寸繪圖，某些尺寸與其他相 關尺度相比已經被誇張；不相關之細節部份也未完全緣 出，以求圖示之簡潔。 、第一 A圖至第一 C圖之示意圖顯示本發明一實施例形 成發光二極體元件的方法，可對發光二極體元件側面實施 製鞋、， 。百先，如第一 A圖所示，提供發光二極體晶片10， 發光二極體晶片10為包含發光二極體磊晶層11的基板 12 又 ’發光二極體磊晶層11依序包含一第一型半導體層、一 200830578 ·* 主動層及一相反於第一型的第二型半導體層；基板12可以 為非導電基板，也可以為導電基板，導電基板可用以製造 垂直導通的直立式發光二極體，封裝較容易。 弟一 B圖為發光二極體晶片1〇的上視圖。如第一 b圖 所示，切割發光二極體晶片1〇成複數條發光二極體晶條 15，然後，如第一 C圖所示，再提供複數條間隔層（space layer)20,於每兩條發光二極體晶條15中夾一間隔層2〇， ⑩其中間隔層20的高度必須低於發光二極體晶條15的高 度；間隔層20的材質可以為矽（311沁〇11)等半導體材質， 也可以是陶瓷（ceramic)等材質。然後，以夾具25夾集固 定此排發光二極體晶條15與間隔層20，再對發光二極體 晶條15的表面及露出的侧面實施製程。 對發光二極體晶條露出的側面及表面做抗反射處理可 增加出光效率，抗反射處理包含粗化處理及抗反射塗佈 肇（Anti-Reflection Coating，AR coating)，可避免發光二 極體元件發出的光全反射，增加出光效率，形成高效率發 光二極體元件。 第二A圖至第二D圖之示意圖顯示本發明一實施例之 形成高效率發光二極體元件的方法。本實施例僅描述與前 一實施例不同的地方，相同之處不再資述。首先’如第二 A圖所示’提供一發光二極體晶片H0，發光二極體晶片 110為一導電基板112 ,其上包含發光二極體磊晶層111與 200830578 複數個電極107，本實施例以導電基板為例，非導電基板 之實施例不在此詳述’發光^一極體蠢晶層111依序包含第 一型半導體層、主動層（active layer)以及相反於第一型 的第二型半導體層；當第一型為η型時，第二型為p型， 當第一型為Ρ型時，第二型為『型。然後，切割發光二極 體晶片110成複數條發光二極體晶條115,然後，如第二β 圖所示，提供複數條間隔層（sPace layer)20，於每兩條發 光二極體晶條115中夾一間隔層20，以夾具25夾集固定 _ 此排發光二極體晶條115與間隔層20，其中間隔層2〇的 高度低於發光二極體晶條115的高度，接著，如第二C圖 所示，對發光二極體晶條115露出的侧面及表面做表面粗 化處理，其中表面粗化處理可例如為濕蝕刻等方式，之後 再將每一發光二極體晶條115切割成複數個高效率發光二 極體元件13 0 ’如第二D圖所示。此時，被粗化的表面可 以減少光源的全反射，增加出光效率，形成高效率發光二 極體元件130 〇 當發光二極體晶片為一非導電基板時，此非導電基板 可形成具有η電極與p電極在同一平面的發并-件’藉由上述形成發光二《元件之 數個南效率發光二極體元件。 除了表面粗化處理，也可以對第二Β200830578 IX. Description of the Invention: [Technical Field] The present invention relates to a method for forming a light-emitting diode (LED) component, in particular, a method for implementing a light-emitting surface and a side surface (four), Anti-reflection treatment on the rotating surface and side of the light-emitting diode can increase the light-emitting efficiency, and the high-reflection of the light can improve the directivity of the light. _ [Prior Art] The luminous efficiency of a general-emitting diode is governed by the intrinsic luminous efficiency and the llght extraction efficiency; the intrinsic luminous efficiency is the ratio of the external input energy to the light generated by the luminescent layer, which is mainly It is related to the stupid crystal and structure of the material itself, and the proportion of photon energy generated by the light-emitting efficiency into the outside world. With the advancement of epitaxial technology, the internal luminous efficiency of 仵β can reach over 80%, but the light-emitting efficiency of φ is still low, and the light-emitting diode has a certain side light. The proportion of the light-emitting diode element, especially the small-sized light-emitting diode element, has a relatively large area of the total light-emitting area, so the proportion of the side light-emitting is also large, but there is no small-sized light-emitting diode element side. Any treatment is performed to limit the side light exit and reduce the total light output ratio of the light emitting diode elements. In view of the above-mentioned disadvantages that the light-emitting ratio of the small-sized light-emitting diode is not high, it is necessary to propose a method for forming a light-emitting diode element, which can perform a process on the side of the 200830578-light-emitting diode element, and the light-emitting diode device Anti-reflection treatment on the surface and side can increase the light extraction efficiency, and high reflection treatment on the side can improve the directivity of light. SUMMARY OF THE INVENTION One object of the present invention is to provide a method for the side-by-side process of a light-emitting diode device by forming a plurality of light-emitting diode strips by cutting a light-emitting diode wafer, for each two light-emitting diodes. A spacer layer with a lower height is sandwiched between the polar body strips, and the entire row of the LED strips and the spacer layer is fixed by a clamp holder to perform the process on the side surface of the light emitting diode element. Another object of the present invention is to provide a method for forming a high-efficiency light-emitting diode element, which is subjected to an anti-reflection treatment on the exposed side surface and surface of the light-emitting diode element by the above-described method of performing a process on the side surface of the light-emitting diode element. The light extraction efficiency can be increased to form a high-efficiency light-emitting diode element. It is still another object of the present invention to provide a method for forming a highly directional light-emitting diode element, wherein the exposed side of the light-emitting diode element is made higher by the method of manufacturing the side of the light-emitting diode element The reflection treatment improves the directivity of the light to form a highly directional light-emitting diode element. In accordance with the above objects, the present invention provides a method of forming a light-emitting diode element that can be fabricated on the side of a light-emitting diode element. First, a light emitting diode chip is provided, the light emitting diode chip is a substrate including a light emitting diode epitaxial layer, and the light emitting diode chip is cut into a plurality of light emitting diodes 7 200830578 • a crystal strip, and then A spacer layer is sandwiched between each of the two LED strips, and the entire row of the LED strips and the spacer layer are fixed by the clamp, wherein the south of the spacer layer is lower than the height of the LED strip of the LED. Then, the surface of the LED strip and the exposed side surface are processed; the anti-reflection treatment is performed on the surface of the LED strip and the exposed side surface, thereby avoiding the total reflection of the light-emitting diode and increasing the light output. Efficiency; the side of the light-emitting diode strip element is reflected and reflected, so that the light-emitting diode strip element can emit light in the same direction to improve the directivity of the light. [Embodiment] A detailed description of some embodiments of the present invention is as follows, but the present invention can be widely applied to other embodiments in addition to the detailed description. That is, the scope of the present invention is not limited by the embodiments which have been proposed, and the scope of the invention as set forth in the present invention shall prevail. Furthermore, in order to provide a clearer description and a better understanding of the present invention, the various parts of the drawings are not drawn according to their relative dimensions, and some dimensions have been exaggerated compared to other related scales; irrelevant details are also Not completely out of the way, in order to simplify the illustration. A schematic view of the first A through the first C shows a method of forming a light emitting diode element according to an embodiment of the present invention, and a shoe can be implemented on the side of the light emitting diode element. As shown in FIG. A, a light-emitting diode wafer 10 is provided. The light-emitting diode wafer 10 is a substrate 12 including a light-emitting diode epitaxial layer 11 and a 'light-emitting diode epitaxial layer 11 is sequentially arranged. The invention comprises a first type semiconductor layer, a 200830578* active layer and a second type semiconductor layer opposite to the first type; the substrate 12 can be a non-conductive substrate or a conductive substrate, and the conductive substrate can be used to manufacture vertical conduction. Upright LEDs are easy to package. B-picture is a top view of the light-emitting diode wafer 1 。. As shown in FIG. b, the LED chip 1 is cut into a plurality of LED strips 15, and then, as shown in FIG. C, a plurality of spacer layers 20 are provided. Each of the two LED strips 15 is provided with a spacer layer 2, 10 wherein the height of the spacer layer 20 must be lower than the height of the LED strip 15; the spacer layer 20 may be made of 矽 (311沁〇). 11) Semiconductor materials, such as ceramics. Then, the row of the light-emitting diode bars 15 and the spacer layer 20 are sandwiched and fixed by the jig 25, and the surface of the light-emitting diode bar 15 and the exposed side faces are subjected to a process. Anti-reflection treatment is applied to the exposed side surface and surface of the LED strip to increase the light-emitting efficiency. The anti-reflection treatment includes roughening treatment and anti-Reflection coating (AR coating) to avoid the light-emitting diode. The light emitted by the component is totally reflected, increasing the light extraction efficiency and forming a high-efficiency light-emitting diode element. The schematic views of the second to second figures D show a method of forming a high efficiency light emitting diode element according to an embodiment of the present invention. This embodiment describes only differences from the previous embodiment, and the same points are not described. First, as shown in FIG. 2A, a light-emitting diode wafer H0 is provided. The light-emitting diode wafer 110 is a conductive substrate 112 including a light-emitting diode epitaxial layer 111 and a 200830578 plurality of electrodes 107. In the embodiment, the conductive substrate is taken as an example, and the embodiment of the non-conductive substrate is not described in detail herein. The illuminating electrode layer 111 sequentially includes the first type semiconductor layer, the active layer and the first type. The second type semiconductor layer; when the first type is an n type, the second type is a p type, and when the first type is a Ρ type, the second type is a "type." Then, the LED array 110 is cut into a plurality of LED strips 115, and then, as shown in the second β diagram, a plurality of sPace layers 20 are provided for each of the two LEDs. A spacer layer 20 is sandwiched between the strips 115 and clamped by the jig 25. The row of LED strips 115 and the spacer layer 20, wherein the height of the spacer layer 2 is lower than the height of the LED strip 115, and then As shown in FIG. C, the surface and the exposed surface of the LED strip 115 are subjected to surface roughening treatment, wherein the surface roughening treatment may be, for example, wet etching, and then each of the LEDs is further disposed. The crystal strip 115 is cut into a plurality of high efficiency light emitting diode elements 13 0 ' as shown in the second D. At this time, the roughened surface can reduce the total reflection of the light source, increase the light extraction efficiency, and form the high-efficiency light-emitting diode element 130. When the light-emitting diode wafer is a non-conductive substrate, the non-conductive substrate can be formed with η. The electrodes in the same plane as the p-electrode are formed by the above-mentioned plurality of south efficiency light-emitting diode elements. In addition to surface roughening, it can also be used for the second
率發光二極體元件。 也可以對弟二β圖中發光二極體 Η則面進行抗反射塗佈，形成高效 200830578 第三圖之示意圖顯示本發明另一實施例之形成高效率 發光二極體元件的方法。本實施例僅描述與前一實施例不 同的地方，相同之處不再贅述。在此實施例中，不使用粗 化處理，而藉由抗反射塗佈形成至少一抗反射膜於發光二 極體晶條露出的侧面及表面上，以形成高效率發光二極體 元件。於第二B圖之後，,對發光二極體、晶條115露出的侧 面及表面進行抗反射塗佈，形成至少一抗反射層145，如 ⑩ 第三圖所示，本圖示只顯示一層抗反射層；抗反射層145 可以為氧化矽或氮化矽等介電層，抗反射塗佈的方法可例 如為電漿增益化學氣相沉積（Plasma Enhanced Chemical Vapor Deposnion，PECVD)等方法，沉積約四分之一光波 長的厚度，其中該波長為光源在介電層中行進的波長，一 般而言，形成多層的抗反射層可得到更好的效果，如此即 可減少光源的全反射，增加出光效率。之後再於複數個電 ，上形成開口（未圖示），並切割發光二極體晶條成複數個 • 高效率發光二極體元件（未圖示）。 上述形成高效率發光二極體的方法也可應用於非導電 基板’製作高致率發光二極體元件。 q $由上述形成發光二極體元件的方法，於發光二極體 ^條露出的側面做高反射處理，可使發光二極體元件往同 一方向出光，增加光的指向性，形成高指向性發光二極體 11 200830578 第四A至第四D圖之示意圖顯不本發明一實施例之开3 成南指向性發光二極體元件的方法。首先，提供一發光二 極體晶片，該發光二極體晶片為一包含發光二極體蠢晶層 211的基板212，本實施例以導電基板為例，非導電基板之 實施例不在此詳述，發光二極體蠢晶層211依序包含第— 型半導體層、主動層及相反於第一型的第二型半導體層。 接著，切割一發光二極體晶片，成複數條發光二極體晶條 _ 215,再形成光阻層220於複數條發光二極體晶條215之表 面上；亦即，如第四A圖所示，以夾具25夾集固定複數條 發光二極體晶條215，再旋轉塗佈形成一光阻層220於複 數條發光二極體晶條215上，之後再分離每一發光二極體 晶條215 〇 然後，如第四B圖所示，以夾具25夾集固定該複數條 發光二極體晶條215，每兩條該發光二極體晶條215中夾 φ 一間隔層20，其中間隔層20的高度低於發光二極體晶條 215的高度，然後，如第四C圖所示，形成透明介電層230 及高反射層235於整排複數條發光二極體晶條215及複數 條間隔層20上，其中高反射層235為高反射金屬層或高反 射多層膜其中之一，高反射金屬層之材質包括金、鋁、銀 或其合金其中之一，透明介電層230係用以避免高反射層 235與發光二極體磊晶層211短路，當高反射層235為高 反射多層膜時，可不須形成透明介電層230，本實施例之 圖示及後續說明是以高反射層235為高反射金屬層時為 12 200830578 例。之後，移除間隔層20，再移除發光二極體晶條215表 面的光阻層220、透明介電層230及高反射層235，如第四 D圖所示。然後，在發光二極體晶條215上形成電極（未圖 示）’再切割發光二極體晶條成複數個發光二極體元件（未 圖不）。 當發光二極體元件330之主動層發出的光340,經由發 光二極體元件330兩侧高反射層335反射，使發光二極體 • 元件330均勻出光的特性，變成往同一方向出光，如第五 圖所示。 藉由本發明對發光二極體晶條表面及露出的侧面做抗 反射处里了避免發光二極體元件的光全反射，增加出光 效率，對發光二極體晶條元件露出的侧面做高反射處理， 可使發光二極體元件的光經由高反射層反射，往同一方向 出光’增加光的指向性。 以上所述之實施例僅係為說明本發明之技術思想及特 點、，,^目的在使_此項技藝之人士能夠瞭解本發明之内 田不此以之限定本發明之專利範圍，即大 凡依本电明所揭不之於 倩神所作之均等變化或修飾，仍應涵 盍在本發明之專利範圍内。 【圖式簡單說明】 第一 A圖至第一 C圖之示意圖顯示本發明一實施例形 200830578 成發光二極體元件的方法，可裔發光二極體元件侧面實施 製程。 第二A圖至第二D圖之示意圖顯示本發明一實施例之 形成高效率發光二極體元件的方法。 第三圖之示意圖顯示本發明另一實施例之形成高效率 發光二極體元件的方法。 第四A至第四D圖之示意圖顯示本發明一實施例之形 成高指向性發光二極體元件的方法。 φ 第五圖之示意圖顯示高指向性的發光二極體元件。 【主要元件符號說明】 10 發光二極體晶片 11 發光二極體磊晶層 12 基板 15 發光二極體晶條 20 間隔層 25 爽具 107 電極 110 發光二極體晶片 111 發光二極體磊晶層 112 導電基板 115 發光二極體晶條 130 發光二極體元件 145 抗反射層 211 發光二極體磊晶層 212 基板 215 發光二極體晶條 220 光阻層 200830578 230 透明介電層 • 235 高反射層 330 發光二極體元件 335 高反射層 340 光Rate LED components. It is also possible to carry out anti-reflection coating on the surface of the light-emitting diode of the second crystal map to form an efficient 200830578. The third diagram shows a method of forming a high-efficiency light-emitting diode element according to another embodiment of the present invention. This embodiment only describes differences from the previous embodiment, and the same portions will not be described again. In this embodiment, at least one anti-reflection film is formed on the exposed side surfaces and surfaces of the LED strip by anti-reflection coating without using a roughening treatment to form a high-efficiency light-emitting diode element. After the second B diagram, the exposed surface and surface of the LED and the exposed strip 115 are anti-reflective coated to form at least one anti-reflective layer 145. As shown in FIG. 3, the figure shows only one layer. The anti-reflection layer 145 may be a dielectric layer such as yttrium oxide or tantalum nitride. The method of anti-reflective coating may be, for example, plasma enhanced chemical vapor deposition (PECVD) deposition. A thickness of about a quarter of the wavelength of the light, wherein the wavelength is the wavelength at which the light source travels in the dielectric layer. Generally, a multi-layered anti-reflective layer is formed to obtain a better effect, thereby reducing total reflection of the light source. Increase light extraction efficiency. Then, an opening (not shown) is formed on the plurality of electrodes, and the LED strips are cut into a plurality of high-efficiency light-emitting diode elements (not shown). The above method of forming a high-efficiency light-emitting diode can also be applied to a non-conductive substrate to fabricate a high-efficiency light-emitting diode element. q$ is formed by the above method for forming a light-emitting diode element, and the high-reflection treatment is performed on the exposed side surface of the light-emitting diode, so that the light-emitting diode element emits light in the same direction, thereby increasing the directivity of light and forming high directivity. Light Emitting Diode 11 200830578 A schematic view of the fourth to fourth D diagrams shows a method of forming a south directional light emitting diode element according to an embodiment of the present invention. First, a light-emitting diode chip is provided. The light-emitting diode chip is a substrate 212 including a light-emitting diode stray layer 211. In this embodiment, a conductive substrate is taken as an example, and an embodiment of the non-conductive substrate is not described in detail herein. The light emitting diode stray layer 211 sequentially includes a first type semiconductor layer, an active layer, and a second type semiconductor layer opposite to the first type. Then, a light-emitting diode chip is cut into a plurality of light-emitting diode strips 215, and a photoresist layer 220 is formed on the surface of the plurality of light-emitting diode strips 215; that is, as shown in FIG. As shown, a plurality of light-emitting diode bars 215 are sandwiched by a clamp 25, and then spin-coated to form a photoresist layer 220 on a plurality of light-emitting diode bars 215, and then each light-emitting diode is separated. The plurality of light-emitting diode bars 215 are sandwiched and fixed by the clamp 25, and the spacer layer 20 is sandwiched between each of the two light-emitting diode bars 215, as shown in FIG. The height of the spacer layer 20 is lower than the height of the LED strip 215. Then, as shown in FIG. 4C, the transparent dielectric layer 230 and the high reflective layer 235 are formed in a row of a plurality of LED strips. 215 and a plurality of spacer layers 20, wherein the high reflective layer 235 is one of a highly reflective metal layer or a highly reflective multilayer film, and the material of the highly reflective metal layer comprises one of gold, aluminum, silver or an alloy thereof, transparent dielectric The layer 230 is used to avoid short circuit between the high reflection layer 235 and the epitaxial layer 211 of the light emitting diode. When the shot layer 235 is a highly reflective multilayer film, the transparent dielectric layer 230 does not need to be formed. The illustration and subsequent description of the present embodiment are in the case of the highly reflective layer 235 being a highly reflective metal layer. Thereafter, the spacer layer 20 is removed, and the photoresist layer 220, the transparent dielectric layer 230, and the high reflective layer 235 on the surface of the LED strip 215 are removed, as shown in FIG. 4D. Then, an electrode (not shown) is formed on the LED strip 215 to re-cut the LED strip into a plurality of LED elements (not shown). When the light 340 emitted from the active layer of the LED component 330 is reflected by the high-reflection layer 335 on both sides of the LED body 330, the light-emitting diode element 330 is uniformly emitted, and the light is emitted in the same direction, such as The fifth picture is shown. By the invention, the surface of the LED strip and the exposed side surface are made anti-reflection to avoid total light reflection of the LED component, thereby increasing the light-emitting efficiency and high-reflecting the exposed side of the LED strip element. The treatment can make the light of the light-emitting diode element reflect through the high-reflection layer and emit light in the same direction to increase the directivity of the light. The embodiments described above are only for explaining the technical idea and the features of the present invention, and it is intended that those skilled in the art can understand that the invention of the present invention does not limit the scope of the patent of the present invention. The equivalent changes or modifications made by Qianming are not included in the scope of the patent of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS A first schematic view to a first schematic view of a first embodiment of the present invention shows a method of forming a light-emitting diode element in the form of a light-emitting diode element. The schematic views of the second to second figures D show a method of forming a high efficiency light emitting diode element according to an embodiment of the present invention. The schematic diagram of the third diagram shows a method of forming a high efficiency light emitting diode element in accordance with another embodiment of the present invention. 4A to 4D are schematic views showing a method of forming a high directivity light emitting diode element according to an embodiment of the present invention. φ The schematic of the fifth figure shows a highly directional light-emitting diode element. [Major component symbol description] 10 LED chip 11 LED epitaxial layer 12 Substrate 15 LED strip 20 Spacer 25 Cooler 107 Electrode 110 LED chip 111 LED epitaxial Layer 112 Conductive Substrate 115 Light Emitting Bars 130 Light Emitting Diode Elements 145 Anti-Reflective Layer 211 Light Emitting Diode Epitaxial Layer 212 Substrate 215 Light Emitting Bars 220 Photoresist Layer 200830578 230 Transparent Dielectric Layer • 235 High reflective layer 330 light emitting diode element 335 high reflective layer 340 light
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