TW200828110A - A hybrid architecture for solid state storage device - Google Patents

A hybrid architecture for solid state storage device Download PDF

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Publication number
TW200828110A
TW200828110A TW095148194A TW95148194A TW200828110A TW 200828110 A TW200828110 A TW 200828110A TW 095148194 A TW095148194 A TW 095148194A TW 95148194 A TW95148194 A TW 95148194A TW 200828110 A TW200828110 A TW 200828110A
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TW
Taiwan
Prior art keywords
ssd
slc
flash memory
mlc
storage device
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TW095148194A
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Chinese (zh)
Inventor
Bill Lin
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Efortune Technology Corp
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Priority to TW095148194A priority Critical patent/TW200828110A/en
Publication of TW200828110A publication Critical patent/TW200828110A/en

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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2211/00Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564Miscellaneous aspects
    • G11C2211/5641Multilevel memory having cells with different number of storage levels
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

Currently there are many vendors who focus on the high potential market of solid state device (SSD) composed of NAND flash. This kind of SSD has some advantages of long life cycle, power-saving, anti-vibration, highly reliable, short seeking period and hot-reducing. Some laptop manufacturers are going to use this product as the future main storage media on high-end product. As soon as the flash is getting popular, to use this device in portable devices will become the market trend in the near future. The bottleneck of the market development is only price issue. Many vendors spend huge money and would like to reduce to the cost of SSD without sacrifice the performance of throughput. There are two categories, MLC and SLC, in the NAND flash memory area. The characteristics of SLC NAND flash is high writing performance and high reliability, but the price of unit capacity is much higher than MLC one. Contrary to the price of SLC, MLC NAND flash is much cheap, but the writing performance is not as good as SLC one. And there are almost no difference in the performance of reading. This invention uses the advantages of SLC and minimize the disadvantages of MLC to implement SSD. Co-operating with the features of Windows Operation System, the system divides the SSD into several partitions. The OS system and only very few changed files can be located on the area of MLC NAND flash, and any data which requires high throughput can be located on the area of SLC NAND Flash. With the mechanism, it can consider both price and performance.

Description

200828110 七、指定代表圖: (一) 本案指定代表圖為··第(一)圖。 (二) 本案代表圖之元件代表符號簡單說明: 100邏輯到真實轉換表:系、统收到命令後,依 記憶體所在的區域。 行巧貝體 110 ΐϊ㈢ =快閃記憶體:效能比較差的MLC快閃記憶體’ 1貝格取便宜。 120 快閃記碰:效能比較好狐c快閃記憶體, =SLC ,記憶體:效能最好’價格最責的記憶體。 140 資訊以及系統韌體:記錄系統資訊的區域 或疋,輯到真實轉換表所在的區塊等等的資訊。 160 170 的^料:系統中不常變動的觀,如執行程式 180^IE ^c〇〇kie 19===_綱定期執行備份程序時,備份 八本案若有化學式時,請揭示最能顯示發明特徵的化學式: 九、發明說明: 【發明所屬之技術領域】 靜、=己更=為的:^^ 5 200828110 域,提i -種新的架存媒介之領 配合視窗(Windows)作業系統特性,接屮_、閃5己憶體混用的技術, 時可以兼顧到效能和價格的考量,烊;f新個架構’此架構同 此發明可關祕筆記㈣雜。 重視省電以及耐震動功能的隨身移動^碟機型竭的硬碟,尤其是 【先前技術】 發展9已 1市二的五固十了:以。主要磁盤’磁盤的技術 大、耗電、以及壽命等等以。如體積 馬達技術,寄望可以增加硬碟旁人^直在提出新的硬碟 限的持續縮短。除了硬碟壽命二題^看卻是保固期 出微型硬碟的產品如(IBM MicroD二卜期也有硬碟業者提 存裝置的市場,但是其馬達以及耐震度的_ 人攜帶型儲 子式的產品,沒綱記憶體是電 的保證。乍看之下,;某i攸憶卡都提供了終身保固 磁碟機,作糾閃記产!乎比傳統磁盤更適合用於固態 機。也因過傳統馬達磁盤式磁碟 磁碟為主流。 ’、 面上的固恶磁碟機還是以傳統馬達 的=可以分為多層細胞單元⑽ti Level Cell ; 體的特色—⑽;SLC)。SLC快閃記憶 種可Ϊ 快’因為—個記憶細胞只有〇和1兩 價^位元的資料,所以其記倾單絲量比較小 、。車又貝。MLC快閃記憶體的特色在於其價格比較便宜,例如單 6 200828110 細胞儲存雙位元的架構,因為一個記憶細胞可以有分成四個電 位,用來表示〇〇、01、10、和11四種可能,這樣的架構可以儲存 兩個位元資料,但是其寫入速度相對比較慢,相對壽命也較差, ' 不適合用於常常需要更新資料的儲存裝置。 因為這兩種快閃記憶體的特性不同,所以要如何搭配可以同時 兼顧到效能以及價格的考量,一直是許多固態磁碟廠商所要討論 的課題。 【發明内容】 發明人發現先前的問題後,多方的蒐集資料,並藉著在此領 _ 域多年上的研究,經過多次的測試以及實驗,故發明了此種於由 SLC以及MLC快閃記憶體混合而成的固態磁碟機技術的架構。 此發明係將固態磁碟機配合Windows視窗作業系統的特性將 磁碟機切成數個區塊。存放Windows作業系統資料(150)的區塊, 如開機程式的程式碼或是動態連結函式庫(DLL),這一類型的檔案 變更的機會很低,所以不在乎可以放在最慢速的快閃記憶體 (110)。常變動的檔案(160)的區塊,如我的文件或是下載的圖片 或是音樂等等,因為這一類型的常常變更所以會比較需要較高寫 入的效能’所以需要儲存在SLC的快閃記憶體中(130)。而不常變 _ 動的資料(17〇)的區塊,如程式執行檔Office等等,因為安裝完 成之後便不會常常改變,只有解除安裝時才會修改的,可以放在 速度比較快的MLC快閃記憶體。 、,使用者可以透過Windows專用軟體切割固態磁碟機的區塊, 並且將此區塊依照使用者的需要做排列。如類型1 MLC快閃記憶 體區塊為第一個磁碟機分區,類型2 MLC快閃記憶體為第二個磁 碟機分區,如果系統此時只有此固態磁碟機,則第一個磁碟機分 區將為C槽,第二個磁碟機分區將為d槽。使用者在安裝作業系 統時二便將Windows視窗作業系統安裝在c槽中。後續的應^矛呈 式則安裝在D槽中,而其他一些常常變動的文件檔,則可以安裝 在由SLC快閃記憶體所組成的系統槽中。 7 200828110 【實施方式】 πί ϊϊ架ίϊη所示,此系統由微控制器、系統記憶體、快 系統緩衝區以應介面所組成。 二!^圖二所示,微處理器首先讀取某—特定快閃 ^個产二笛’ ^由此區塊,微處理器可以得到系統設定值, 碟分區,哪—個區塊為第二個磁碟分區。 曰J據此貞似及在系統記憶體上建立邏輯到真實轉換表, ^二二'、ΡΑΤΑ或是USB的介面’接收Host i發送讀'取或 步;^到H〇St讀取資料命令時,如圖四所示,微處理器 f邏輯^區位置,決定目前要讀取的資料屬於哪—個區域的 己憶體’致能該快閃記憶體的CE(Chip ε_6),然後透過 =記,體控制器二對快閃記憶體下讀取命令,利賴A的機制 丄’、P秘It體上的資料搬移到系統緩衝區中,微處理器通知娜 ”面,可以將資料搬移到H〇st。 當微處理器收到Host寫人資料命令時’如圖四所示,微處理器 ,據邏輯的磁區位置’決定目前要讀取的資料屬於哪―個^ 記憶體,致能職閃記憶_ eE(ehip Enable),等待此对 μ料的到達’透過快閃記憶體控制器,對快閃記憶體下寫入命入, 然後利用DMA的機制將系統緩衝區的資料搬移到快閃記憶^, 完成寫入的動作。 〜’ 【圖式簡單說明】 第一圖:系統示意圖。 第二圖··系統架構圖。 第三圖:系統啟動流程圖。 第四圖:系統讀取動作流程圖。 第五圖:系統寫入動作流程圖。 2〇〇828li〇 號說明】 微$制器:系統運作的中心,負責處裡Host傳送的命令, ,定要存取哪一個區塊的快閃記憶體。 7 系、、、先。己|思體·為一 SRAM,此存放系統的執行期間的杳 可以增加系統的效能。 讯’ 220快閃記憶體以及DMA控制器:此部分負責快閃記憶體 以及資料的傳輸。 子取 24〇快閃記憶體。 25〇 :系,緩衝區:讀取資料時,快閃記憶體控制器將資 ^體内搬移到祕緩衝區,並通知娜介料4由 備,成’ SSD便將資料由系統緩衝區搬移到H〇st g ΪΪ微處f器資料已經準備完成,微處理ϋ便啟=閃ί 260 料由Λ統緩衝區搬移到快閃記憶體。 260 SSD和Host的”面:此介面目前有_、舰與應等。200828110 VII. Designation of representative representatives: (1) The representative representative of the case is the picture of (1). (2) The representative symbol of the representative figure in this case is a simple description: 100 logical to real conversion table: after receiving the command, the system depends on the area where the memory is located.巧巧贝体 110 ΐϊ (3) = flash memory: MLC flash memory with poor performance ‘ 1 Beg is cheap. 120 Flash Touch: The performance is better, Fox C flash memory, =SLC, memory: the best performance, the most responsible memory. 140 Information and System Firmware: The area where the system information is recorded or 疋, the information of the block where the real conversion table is located, and so on. 160 170 of the material: the system does not change often, such as the implementation of the program 180 ^ IE ^ c〇〇kie 19 = = = _ regularly execute the backup program, if the backup of the eight cases, if there is a chemical formula, please reveal the best display Chemical formula of the invention: Nine, invention description: [Technical field of invention] Static, = more = for: ^^ 5 200828110 domain, mentioning i - a new type of storage medium with Windows (Windows) operating system Features, 屮 _, 闪 己 己 己 己 己 己 己 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The hard disk that pays attention to the power saving and vibration-resistant functions of the portable mobile disk type, especially the [prior art] development 9 has a city two two solid ten: The main disk' disk technology is large, power-hungry, and longevity. Such as volume motor technology, it is hoped that the hard disk will increase the number of people who are new to the hard disk. In addition to the hard disk life of the second question ^ look at the warranty period of the micro-hard disk products such as (IBM MicroD second phase also has a hard disk industry to extract the device market, but its motor and shock-resistant _ human portable storage type products No memory is the guarantee of electricity. At first glance, a certain memory card provides a lifetime warranty disk drive for flashback recording! It is more suitable for solid-state machines than traditional disks. The motor disk disk is the mainstream. 'The solid disk drive on the surface is still divided into multi-layer cell units (10) ti Level Cell with the traditional motor = (10); SLC). SLC flash memory can be fast ‘because — a memory cell has only 〇 and 1 valence ^ bit of data, so the amount of pour monofilament is relatively small. The car is also shellfish. MLC flash memory is characterized by its relatively low price, such as the single 6 200828110 cell storage double-bit architecture, because a memory cell can be divided into four potentials, used to represent 〇〇, 01, 10, and 11 Possibly, such an architecture can store two bits of data, but its write speed is relatively slow and its relative lifetime is poor, 'not suitable for storage devices that often need to update data. Because the characteristics of these two types of flash memory are different, how to match the performance and price considerations has always been the subject of many solid-state disk manufacturers. SUMMARY OF THE INVENTION After discovering the previous problems, the inventors collected information from various parties and, through many years of research in this field, after many tests and experiments, invented this kind of flashing by SLC and MLC. The architecture of solid state disk technology with a mixture of memories. This invention cuts the disk drive into a plurality of blocks by combining the solid state disk drive with the characteristics of the Windows Windows operating system. Blocks of Windows operating system data (150), such as the code of the boot program or the dynamic link library (DLL), the chance of this type of file change is very low, so don't care if it can be placed at the slowest speed. Flash memory (110). Blocks of frequently changing files (160), such as my files or downloaded pictures or music, etc., because of this type of frequent changes, it will require higher write performance 'so it needs to be stored in SLC Flash memory (130). Blocks that do not change often _ dynamic data (17 〇), such as program execution file Office, etc., because the installation will not change often after the completion of the installation, only when the installation is removed, can be placed at a faster speed MLC flash memory. The user can cut the block of the solid state drive through the Windows-specific software, and arrange the blocks according to the needs of the user. For example, the type 1 MLC flash memory block is the first disk drive partition, and the type 2 MLC flash memory is the second disk drive partition. If the system only has this solid state disk drive at this time, the first one The drive partition will be slot C and the second drive partition will be slot d. When the user installs the operating system, the Windows Windows operating system is installed in the c slot. Subsequent snails are installed in the D slot, while other frequently changing files can be installed in the system slot consisting of SLC flash memory. 7 200828110 [Embodiment] As shown in Figure π, the system consists of a microcontroller, a system memory, and a fast system buffer. Second! ^ Figure 2, the microprocessor first reads a certain - specific flash ^ two production flute ' ^ This block, the microprocessor can get the system settings, the disk partition, which block is the first Two disk partitions.曰J According to this, and create a logical to real conversion table on the system memory, ^2', ΡΑΤΑ or USB interface 'receive Host i send read' take or step; ^ to H〇St read data command At the same time, as shown in FIG. 4, the position of the logic f of the microprocessor f determines which data the current data to be read belongs to, and the CE (Chip ε_6) of the flash memory is enabled. = remember, the body controller two pairs of flash memory read commands, the mechanism of the Lei A 、 ', P secret It is transferred to the system buffer, the microprocessor informs Na" face, you can put the data Move to H〇st. When the microprocessor receives the Host Write Data command, as shown in Figure 4, the microprocessor, according to the logical magnetic location, determines which data the current data to read belongs to. , enable eE (ehip Enable), wait for the arrival of the μ material to pass through the flash memory controller, write the write to the flash memory, and then use the DMA mechanism to buffer the system. The data is moved to the flash memory ^, and the writing operation is completed. ~' [Simple description] Figure: System diagram. Second diagram··System architecture diagram. Third diagram: System startup flow chart. Fourth diagram: System read action flow chart. Fifth diagram: System write action flow chart. 2〇〇828li〇 No. Description] Micro-controller: the center of the system operation, responsible for the commands transmitted by the Host, which flash memory to access which block. 7 system,, first. SRAM, the storage period of this storage system can increase the performance of the system. News '220 flash memory and DMA controller: This part is responsible for the flash memory and data transmission. Sub-buffer 24 flash memory. 25 〇: Department, buffer: When reading data, the flash memory controller will move the body to the secret buffer, and inform Na Na 4 to prepare the data, and the data will be moved from the system buffer to the SSD. H〇st g ΪΪ micro-f device data is ready to be completed, micro-processing 启 启 = = flash 260 material is moved from the buffer to the flash memory. 260 SSD and Host "face: this interface currently has _, The ship should wait.

Claims (1)

200828110 十、申請專利範圍: L if一所示,使用者可以透過一個特殊程式,將混合架構的 固恶儲存裝置(SSD)切成好幾個區域,每一個區域對應到 一種快閃記憶體。 〜 2· ί圖f所示,此為混合架構的固態儲存裝置(SSD),是由MLC ^閃圮憶體以及SLC快閃記憶體組合而成,並透過任何資料 傳輸界面,如SATA、PATA和USB等 、 3·如圖二所示,混合架構的固態儲存裝置(33]))啟動程序。 4·,圖四所示,混合架構的固態儲存裝置(SSD)資料讀取程 序。 、 5·如圖五所不,混合架構的固態儲存裝置(SSD)資料寫入程 序。 、* 6·如同專利範圍第1一5項所述,此混合架構的固態儲存裝置技 ===採_ __與虹㈣記健所組 200828110 七、指定代表圖: (一) 本案指定代表圖為··第(一)圖。 (二) 本案代表圖之元件代表符號簡單說明: 100邏輯到真實轉換表:系、统收到命令後,依 記憶體所在的區域。 行巧貝體 110 ΐϊ㈢ =快閃記憶體:效能比較差的MLC快閃記憶體’ 1貝格取便宜。 120 快閃記碰:效能比較好狐c快閃記憶體, =SLC ,記憶體:效能最好’價格最責的記憶體。 140 資訊以及系統韌體:記錄系統資訊的區域 或疋,輯到真實轉換表所在的區塊等等的資訊。 160 170 的^料:系統中不常變動的觀,如執行程式 180^IE ^c〇〇kie 19===_綱定期執行備份程序時,備份 八本案若有化學式時,請揭示最能顯示發明特徵的化學式: 九、發明說明: 【發明所屬之技術領域】 靜、=己更=為的:^^ 5200828110 X. Patent application scope: As shown in L if, the user can cut the solid-state storage device (SSD) of the hybrid architecture into several areas through a special program, each area corresponding to a kind of flash memory. ~ 2· ί 图 f, this is a hybrid architecture solid-state storage device (SSD), which is a combination of MLC ^ flash memory and SLC flash memory, and through any data transmission interface, such as SATA, PATA And USB, etc., as shown in Figure 2, the solid state storage device (33) of the hybrid architecture) starts the program. 4·, as shown in Figure 4, a solid-state storage device (SSD) data reading program with a hybrid architecture. 5) As shown in Figure 5, the solid-state storage device (SSD) data writing program of the hybrid architecture. , * 6 · As described in Item 1-5 of the patent scope, the solid-state storage device technology of this hybrid architecture === mining _ __ and Hong (four) Keejian Group 200828110 VII. Designated representative map: (1) The designated representative of the case The picture is · (1). (2) The representative symbol of the representative figure in this case is a simple description: 100 logical to real conversion table: after receiving the command, the system depends on the area where the memory is located.巧巧贝体 110 ΐϊ (3) = flash memory: MLC flash memory with poor performance ‘ 1 Beg is cheap. 120 Flash Touch: The performance is better, Fox C flash memory, =SLC, memory: the best performance, the most responsible memory. 140 Information and System Firmware: The area where the system information is recorded or 疋, the information of the block where the real conversion table is located, and so on. 160 170 of the material: the system does not change often, such as the implementation of the program 180 ^ IE ^ c〇〇kie 19 = = = _ regularly execute the backup program, if the backup of the eight cases, if there is a chemical formula, please reveal the best display Chemical formula of the invention: Nine, invention description: [Technical field to which the invention belongs] Static, = more = for: ^^ 5
TW095148194A 2006-12-21 2006-12-21 A hybrid architecture for solid state storage device TW200828110A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI384365B (en) * 2009-01-19 2013-02-01 Asustek Comp Inc Control system and control method of virtual memory
CN103984509B (en) * 2014-06-11 2019-02-12 上海新储集成电路有限公司 Isomery NAND type solid state hard disk and the method for improving its performance

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI384365B (en) * 2009-01-19 2013-02-01 Asustek Comp Inc Control system and control method of virtual memory
CN103984509B (en) * 2014-06-11 2019-02-12 上海新储集成电路有限公司 Isomery NAND type solid state hard disk and the method for improving its performance

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