TW200827949A - Stripping composition, TFT substrate manufacturing method, and stripping composition recycling method - Google Patents

Stripping composition, TFT substrate manufacturing method, and stripping composition recycling method Download PDF

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TW200827949A
TW200827949A TW096121376A TW96121376A TW200827949A TW 200827949 A TW200827949 A TW 200827949A TW 096121376 A TW096121376 A TW 096121376A TW 96121376 A TW96121376 A TW 96121376A TW 200827949 A TW200827949 A TW 200827949A
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film
photoresist
substrate
stripping
forming
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TW096121376A
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Chinese (zh)
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TWI427439B (en
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Kazuyoshi Inoue
Masato Matsubara
Yasushi Shiraki
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Idemitsu Kosan Co
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Liquid Crystal (AREA)

Abstract

Provided are a stripping composition capable of improving quality and productivity and improving a working environment, a TFT substrate manufacturing method, and a stripping composition recycling method. The TFT substrate manufacturing method comprises the step of forming a thin film transistor (1050), a protective insulating film (1054) and a resist (1055) over a glass substrate (1010) thereby to form an undercut portion (1554), the step of forming a conductor film (1611) and a pixel electrode (1612) separated from each other, the stripping step of feeding a stripping composition and melting a reformed resist (1553) thereby to strip a conductor film (1611), and the recycle step of melting the conductor film (1611) over the resist into the used stripping composition containing the conductor film (1611), thereby to reuse the used stripping composition.

Description

200827949 九、發明說明 【發明所屬之技術領域】 本發明係關於剝膜組成物、TFT基板之製造方法及剝 膜組成物之回收方法。 【先前技術】 LCD (液晶顯示裝置）、電漿顯示面板裝置（PDP ) • 或有機EL顯示裝置因顯示性能、省能源等理由而廣泛被 利用。特SU作爲行動電話或 PDA ( Personal Digital Assistant)、電腦或LapTop PC、電視等顯示裝置，幾乎 已成爲主流。這些顯示裝置一般使用TFT基板。 例如，液晶顯示裝置爲TFT基板與相對基板之間塡充 液晶等顯示材料。又，液晶顯示裝置爲，對於該顯示材料 於每畫素選擇性地外加電壓。其中，TFT基板爲，配置半 導體薄膜（亦稱爲半導體膜）等所成之TFT (薄膜晶體管 ® )之基板。一般之TFT基板爲，TFT被配置成陣列狀，故 亦稱爲「TFT陣列基板」。 . 且，液晶顯示裝置等所使用的TFT基板爲，TFT與液 晶顯示裝置之畫面的1畫素之組合（將此稱爲1單位）於 玻璃基板上以縱橫方式配置。TFT基板爲，於玻璃基板上 ，閘配線例如以縱方向成等間隔方式配置，電源（source )配線或汲極（drain)配線以橫方向之等間隔被配置。又 ，閘電極，電源（source )電極及汲極（drain )電極各設 置於構成各畫素之上述單位中。 -5- 200827949 然而，作爲該TFT基板之製造方法，一般使用複數的 光罩。藉此該製造流程的步驟數會變多。如此步驟數變多 時，恐怕會使製造產率降低。又，步驟數過多時步驟會變 的複雜，恐怕會使製造費用增加。 因此，最近正大幅度減少製造TFT基板之必要步驟數 ，以及減低製造費用之種種技術開發。 (過去例） 例如，專利文獻1中記載薄膜晶體管基板之製造方法 及剝膜組成物之技術。所謂該技術爲，將存在於剝膜組成 物中之導電膜於貯藏槽内貯藏中進行加熱溶解，進而再使 用剝膜組成物。具體爲進行上述加熱溶解時，將硫安息香 酸、硫醇酸酸等硫醇酸系化合物混合於剝膜組成物中，並 溶解導電膜。又，含有上述硫醇酸系化合物之剝膜組成物 ，亦與光阻同時溶解導電膜。因此，將不要的導電膜自基 板剝離之所需第1時間、與必要之畫素電極經完全溶解的 第2時間之間，必須爲第1時間 < 第2時間之關係。 [專利文獻1]特開2006-74039號公報 【發明內容】 然而，上述專利文獻1所記載的技術爲，剝膜組成物 含有導電膜用剝膜添加劑，例如，溶解氧化銦·氧化鋅（ IZO )等所成之必要導電膜。因此，剝膜不要導電膜時， 畫素電極等必要之導電膜亦極微量地被溶解。因此，有著 -6 - 200827949 含製造產率降低要素之問題。 又，導電膜爲，例如由結晶化之氧化銦·氧化錫（ ITO )等所誠實，對剝膜組成物（弱酸）之溶解速度較爲 慢，實質上有著難適用於實際製造路線之問題。又，導電 膜難以保證完全地溶解，而有著含製造產率降低要素之問 題。 又，上述專利文獻1所記載的技術爲，硫醇酸系化合 Φ 物於第1時間中溶解導電膜，對畫素電極產生傷害。藉此_ 有著由提高製造產率及信賴性之觀點來看並不佳之問題。 且，含有硫代乙醇酸等硫之化合物大多數會釋放出惡 臭，使得作業環境劣化。因此，對於周邊環境之負荷亦大 而使甩於工業上時，會造成非常大的風險。 且，藉由回收剝膜組成物，可達到製造成本的降低。 又，可望可改善剝膜步驟之作業效率並提高生產性。 本發明有鑑於上述課題，係以提供一種可提高品質及 H 生產性，且可改善作業環境，剝膜組成物、TFT基板之製 造方法及剝膜組成物之回收方法爲目的。 _ 欲達到上述目的，本發明之剝膜組成物可使用於半導 體裝置之製造上，溶解光阻，層合於前述光阻上之導電體 膜經剝離的剝膜組成物。又，前述剝膜組成物爲含有2 0〜 7 9.5重量％之胺系化合物、20〜79.5重量％之非質子性極 性化合物、與0.5〜5重量％之碳系化合物。 如此，藉由含有碳系化合物，與含有硫醇酸系化合物 之情況相比，溶解光阻時，導電體膜幾乎不會被溶解。藉 200827949 此，對於以畫素電極等爲必要的導電體膜並不會造成傷害 ，可提高製造產率及信賴性。又、亦不會釋出惡臭，可改 善作業環境。 又，前述胺系化合物以含有至少1種選自單乙醇胺、 單異丙醇胺、甲基甲醇胺、乙基乙醇胺、二甲醇胺、胺乙 氧基乙醇胺、二乙醇胺、及這些組合所成群之化合物爲佳 〇 又，前述非質子性極性化合物以含有至少1種選自 N -甲基-2-吡咯烷酮、N，N-二甲基乙醯胺、N，N-二甲基甲 醯胺、N，N-二甲基咪唑、二甲基亞礪、及這些組合所成群 爲佳。 又，欲達到上述目的，本發明的剝膜組成物爲使用於 半導體裝置的製造上，溶解光阻後剝離層合於前述光阻上 的導電體膜之剝膜組成物。又，前述剝膜組成物爲含有碳 酸乙烯酯、與〇.5〜5重量％之碳系化合物。 如此，取代胺系化合物與非質子性極性化合物可使用 碳酸乙烯酯。如此可提高製造產率及信賴性的同時，亦可 改善作業環境。 又，欲達到上述目的，本發明的剝膜組成物使用於半 導體裝置之製造上，溶解光阻後剝離層合於前述光阻上的 導電體膜之剝膜組成物。又’前述剝膜組成物爲含有烷氧 基丙烯醯胺化合物、與〇·5〜5重量％之碳系化合物。 如此取代胺系化合物與非質子性極性化合物可使用烷 氧基丙烯醯胺化合物。藉此可提高製造產率及信賴性之同 -8- 200827949 時，亦可改善作業環境。 又，前述烷氧基丙骨醯胺化合物可含有至少1種選自 下述一般式1所示化合物、及這些組合所成群的化合物爲 佳。 〇[Technical Field] The present invention relates to a film-forming composition, a method for producing a TFT substrate, and a method for recovering a film-forming composition. [Prior Art] LCD (Liquid Crystal Display Device), Plasma Display Panel Device (PDP), or organic EL display device are widely used for reasons such as display performance and energy saving. As a mobile phone or PDA (Personal Digital Assistant), computer or LapTop PC, TV and other display devices, the SU has almost become mainstream. These display devices generally use a TFT substrate. For example, a liquid crystal display device is a display material such as a liquid crystal that is interposed between a TFT substrate and a counter substrate. Further, the liquid crystal display device selectively applies a voltage to each pixel for the display material. Among them, the TFT substrate is a substrate of a TFT (Thin Film Transistor ® ) formed of a semiconductor thin film (also referred to as a semiconductor film). In a general TFT substrate, TFTs are arranged in an array, and are therefore referred to as "TFT array substrates". Further, the TFT substrate used in the liquid crystal display device or the like is a combination of a pixel and a pixel of a screen of the liquid crystal display device (this unit is referred to as 1 unit) on the glass substrate in a vertical and horizontal manner. The TFT substrate is placed on the glass substrate, and the gate wirings are arranged at equal intervals in the longitudinal direction, for example, and a power source wiring or a drain wiring is disposed at equal intervals in the lateral direction. Further, a gate electrode, a source electrode, and a drain electrode are each disposed in the above-described unit constituting each pixel. -5- 200827949 However, as a method of manufacturing the TFT substrate, a plurality of photomasks are generally used. Thereby, the number of steps in the manufacturing process will increase. When the number of steps is increased, the manufacturing yield may be lowered. Also, when the number of steps is too large, the steps become complicated, and the manufacturing cost may increase. Therefore, various technical steps for manufacturing TFT substrates and reduction of manufacturing costs have been drastically reduced. (Past example) For example, Patent Document 1 describes a method of manufacturing a thin film transistor substrate and a technique of stripping a film. In this technique, the conductive film present in the film-forming composition is stored in a storage tank for heating and dissolution, and then the film-forming composition is used. Specifically, when the above-described heating and dissolving is carried out, a thiol acid-based compound such as sulfur benzoic acid or thionic acid is mixed in the film-forming composition to dissolve the conductive film. Further, the film-forming composition containing the above-described thiol-acid compound also dissolves the conductive film simultaneously with the photoresist. Therefore, the relationship between the first time required to peel the unnecessary conductive film from the substrate and the second time when the necessary pixel electrode is completely dissolved must be the relationship of the first time <second time. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2006-74039. However, the technique described in Patent Document 1 includes a film-forming composition containing a film-forming additive for a conductive film, for example, dissolving indium oxide and zinc oxide (IZO). ) The necessary conductive film. Therefore, when the conductive film is not peeled off, the necessary conductive film such as a pixel electrode is dissolved in a very small amount. Therefore, there is a problem that -6 - 200827949 contains factors for manufacturing yield reduction. Further, the conductive film is, for example, made into a crystallized indium oxide/tin oxide (ITO), and the dissolution rate of the film-forming composition (weak acid) is relatively slow, and it is substantially difficult to apply it to an actual manufacturing route. Further, it is difficult to ensure that the conductive film is completely dissolved, and there is a problem that the factor of manufacturing yield reduction is contained. Further, in the technique described in Patent Document 1, the thiol-acid compound Φ dissolves the conductive film in the first time and causes damage to the pixel electrode. This has a problem that is not good from the viewpoint of improving manufacturing yield and reliability. Further, most of the compounds containing sulfur such as thioglycolic acid release malodor and deteriorate the working environment. Therefore, the load on the surrounding environment is also large, which causes a very large risk when it is industrially disadvantaged. Moreover, by recovering the film-forming composition, a reduction in manufacturing cost can be achieved. Further, it is expected to improve the work efficiency of the stripping step and improve productivity. In view of the above problems, the present invention has been made in an effort to improve the quality and H productivity, and to improve the working environment, the film-forming composition, the method for producing the TFT substrate, and the method for recovering the film-forming composition. In order to achieve the above object, the film-forming composition of the present invention can be used for the manufacture of a semiconductor device, a photoresist which dissolves a photoresist, and a film which is laminated on the above-mentioned photoresist and which is peeled off. Further, the film-forming composition is an amine-based compound containing 20 to 79.5 % by weight, an aprotic polar compound of 20 to 79.5% by weight, and a carbon-based compound of 0.5 to 5% by weight. As described above, when the photoresist is dissolved, the conductor film is hardly dissolved as compared with the case where the thiol-based compound is contained. By using 200827949, it is possible to prevent the damage of the conductor film which is necessary for the pixel electrode and the like, and to improve the manufacturing yield and reliability. Also, it will not release stench and improve the working environment. Further, the amine compound is a group comprising at least one selected from the group consisting of monoethanolamine, monoisopropanolamine, methylmethanolamine, ethylethanolamine, dimethanolamine, amine ethoxyethanolamine, diethanolamine, and combinations thereof. Further, the aprotic polar compound contains at least one selected from the group consisting of N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide N,N-dimethylimidazole, dimethyl azine, and combinations thereof are preferred. Further, in order to achieve the above object, the film-forming composition of the present invention is a film-forming composition for use in the manufacture of a semiconductor device, in which the photoresist is dissolved and the conductor film laminated on the photoresist is peeled off. Further, the film-forming composition is a carbon-based compound containing vinyl carbonate and 5% by weight to 5% by weight. Thus, ethylene carbonate can be used as the substituted amine compound and the aprotic polar compound. This improves manufacturing productivity and reliability while improving the working environment. Further, in order to achieve the above object, the film-forming composition of the present invention is used in the manufacture of a semiconductor device, and after the photoresist is dissolved, the film-forming composition of the conductor film laminated on the photoresist is peeled off. Further, the film-forming composition is a carbon-based compound containing an alkoxy acrylamide compound and 5 to 5 wt% of ruthenium. As the substituted amine compound and the aprotic polar compound, an alkoxy acrylamide compound can be used. This improves the manufacturing productivity and reliability of the same -8-200827949, and also improves the working environment. Further, the alkoxyglycoside compound may preferably contain at least one compound selected from the group consisting of the following general formula 1 and a compound in which these combinations are grouped. 〇

II R1-0-CH2CH2-C-NR2R3 (-般式 1) 其中R1、R2、R3各獨立爲碳數1至1 0的烷基。 又，前述碳系化合物爲含有至少1種選自下述一般式 2，3所示羧酸、及這些組合所成群之化合物爲佳。 R-COOH ( —般式 2 ) 其中，R爲碳數1至10的院基、芳基。 HOCO-R-COOH ( 一般式 3) 其中，R爲碳數1至10的烷基、芳基。 又，使前述碳系化合物的pKa (酸解離定數）爲4.0 以上5.2以下爲佳。 如此不會對必要的導電體膜造成傷害，且可有效率地 溶解經使用過後的剝膜組成物。 欲達成上述目的，本發明的TFT基板之製造方法爲含 有於基板上形成薄膜晶體管之步驟、於前述基板及薄膜晶 體管上層合保護用絶緣膜之步驟、於前述保護用絶緣膜上 層合光阻之步驟、將前述光阻形成所定之形狀、於該光阻 -9 - 200827949 的周邊下部形成咬邊（undercut )部之步驟、於前述保護 用絶緣-膜及光阻上上蒸鍍導電性物質，形成藉著前述咬邊 (undercut )部而互相分離的畫素電極及光阻上之導電體 膜的步驟、以及於前述基板上，供給上述申請專利範圍第 1項至第8項中任一項所記載的剝膜組成物，將前述光阻 上的導電體膜由前述基板進行剝離的步驟之方法。 如此可減少光罩數。藉此，製造步驟被減少而可提高 # 生產性。又，藉由含有碳系化合物，與含有硫醇酸系化合 物之情況作比較，溶解光阻時，導電體膜幾乎不會被溶解 ，故對於畫素電極等必要之導電體膜不會造成傷害。藉此 ，可提局製造產率及信賴性。又、亦不會釋出惡臭，可改 善作業環境。 又，回收自前述基板剝離之光阻上的導電體膜所含有 的使用過的剝膜組成物。且含有將前述光阻上的導電體膜 溶解於前述使用過的剝膜組成物内，再利用該使用過的剝 # 膜組成物之回收步驟爲佳。 如此可提高製造產率及信賴性之同時，可再利用使用 過的剝膜組成物。藉此，可達到減少製造原價成本之目的 〇 又，使供給於前述基板之剝膜組成物的溫度爲30°C以 上未達60°C，使前述經回收之使用過的剝膜組成物的溫度 爲60°C以上未達l〇〇°C爲佳。 如此可提高製造產率及信賴性之同時’亦可有效率地 再利用使用過的剝膜組成物。 -10- 200827949 又，前述晝素電極及光阻上的導電體膜爲含有至 種選自氧化銦·氧化鋅（IZO)、氧化銦·氧化錫· 鋅（ITZO )、氧化錫·氧化鋅（ZTO )、及這些組合 群爲佳。 如此可將碳系化合物容易地溶解於導電體膜。藉 可提高生產性。 欲達到上述目的，本發明的TFT基板之製造方法 有，於基板上形成薄膜晶體管之步驟、於前述基板及 晶體管上層合保護用絶緣膜之步驟、於前述保護用絶 上層合光阻之步驟、將前述光阻形成爲所定之形狀， 光阻之周邊下部形成咬邊（undercut )部之步驟、於 保護用絶緣膜及光阻上蒸鍍導電性物質，形成藉由前 邊（undercut )部互相分離之畫素電極及光阻上的導 膜之步驟、於前述基板上供給剝膜組成物，將前述光 的導電體膜自前述基板剝離之剝膜步驟、與由自前述 所剝離之光阻上的導電體膜所含有之使用過的剝膜組 ，分離出前述光阻上的導電體膜後，再利用該使用過 膜組成物之回收步驟的方法。 如此可減少光罩數。藉此，減少製造步驟可提高 性。又，自基板剝離之光阻上的導電體膜可由使用過 膜組成物幾乎完全地分離。藉此，不會降低產率下， 利用使用過的剝膜組成物。 又，欲達成上述目的，本發明的TFT基板之製造 爲含有，於基板上形成薄膜晶體管之步驟、於前述基 少1 氧化 所成 此， 爲含 薄膜 緣膜 於該 前述 述咬 電體 阻上 基板 成物 的剝 生產 的剝 可再 方法 板及 -11 - 200827949 薄膜晶體管上層合保護用絶緣膜之步驟、於前述保護用絶 緣膜上層合光阻之步驟、將前述光阻形成爲所定之形狀、 於該光阻之周邊下部形成咬邊（undercut )部之步驟、於 前述保護用絶緣膜及光阻上蒸鍍導電性物質，形成藉由前 述咬邊（undercut )部互相分離之畫素電極及光阻上的導 電體膜之步驟、與於前述基板上供給剝膜組成物，將前述 光阻上的導電體膜自前述基板剝離之剝膜步驟的TFT基板 之製造方法，前述剝膜組成物爲含有20〜80重量％之胺系 化合物、與20〜80重量％之非質子性極性化合物之方法。 如此僅溶解光阻，不會對畫素電極造成傷害。藉此， 可提高產率及信賴性。 且，以不會對該赳膜.組成物的性能產生壞影響之範圍 下，於剝膜組成物中可添加抑制供給時的泡沬之溶劑、或 減低黏度的稀釋劑等。 又，前述胺系化合物含有至少1種選自單乙醇胺、單 異丙醇胺、甲基甲醇胺、乙基乙醇胺、二甲醇胺、胺乙氧 基乙醇胺、二乙醇胺、及這些組合所成群之化合物爲佳。 又，前述非質子性極性化合物爲含有至少1種選自 N-甲基-2-吡咯烷酮、n，N-二甲基乙醯胺、N，N-二甲基甲 醯胺' Ν,Ν-二甲基咪唑、二甲基亞礪、及這些組合所成群 之化合物爲佳。 又，欲達成上述目的，本發明的TFT基板之製造方法 爲含有，於基板上形成薄膜晶體管之步驟、於前述基板及 薄膜晶體管上層合保護用絶緣膜之步驟、於前述保護用絶 -12- 200827949 緣膜上層合光阻之步驟、將前述光阻形成爲所定之形狀、 於該光阻之周邊下部形成咬邊（undercut)部之步驟、於 前述保護用絶緣膜及光阻上蒸鍍導電性物質，形成藉由前 述咬邊（undercut )部互相分離之畫素電極及光阻上的導 電體膜之步驟、與於前述基板上供給剝膜組成物，將前述 光阻上的導電體膜自前述基板剝離之剝膜步驟的TFT基板 之製造方法，前述剝膜組成物爲含有下述一般式1所示烷 φ 氧基丙烯醯胺化合物之方法。 [化2] 〇II R1-0-CH2CH2-C-NR2R3 (-Formula 1) wherein R1, R2 and R3 are each independently an alkyl group having 1 to 10 carbon atoms. Further, the carbon-based compound is preferably a compound containing at least one kind of a carboxylic acid represented by the following general formulas 2 and 3 and a group of these combinations. R-COOH (General Formula 2) wherein R is a hospital group or an aryl group having 1 to 10 carbon atoms. HOCO-R-COOH (General formula 3) wherein R is an alkyl group or an aryl group having 1 to 10 carbon atoms. Further, it is preferred that the carbon compound has a pKa (acid dissociation number) of 4.0 or more and 5.2 or less. This does not cause damage to the necessary conductor film, and the dissolved film composition after use can be efficiently dissolved. In order to achieve the above object, a method of manufacturing a TFT substrate of the present invention includes a step of forming a thin film transistor on a substrate, a step of laminating a protective insulating film on the substrate and the thin film transistor, and laminating a photoresist on the protective insulating film. a step of forming a predetermined shape of the photoresist, forming an undercut portion on a lower portion of the photoresist -9 - 200827949, and depositing a conductive material on the protective insulating film and photoresist. a step of forming a pixel electrode and a conductor film on the photoresist which are separated from each other by the undercut portion, and supplying the substrate to any one of items 1 to 8 of the above-mentioned patent application scope The stripping composition described above is a method in which the conductor film on the photoresist is peeled off from the substrate. This reduces the number of masks. Thereby, the manufacturing steps are reduced and the productivity can be improved. Moreover, by containing a carbon-based compound, when the photoresist is dissolved, the conductor film is hardly dissolved, so that it does not cause damage to a necessary electroconductive film such as a pixel electrode. . In this way, the manufacturing yield and reliability can be improved. Also, it will not release stench and improve the working environment. Further, the used film-forming composition contained in the conductor film on the photoresist peeled off from the substrate was collected. Further, it is preferable to contain a step of dissolving the conductor film on the photoresist in the used film-forming composition and using the used stripping film composition. This improves the manufacturing yield and reliability while reusing the used film-forming composition. Thereby, the purpose of reducing the cost of manufacturing the original cost can be achieved, and the temperature of the film-forming composition supplied to the substrate is 30° C. or more and less than 60° C., so that the recovered used film-forming composition can be recovered. It is preferred that the temperature is 60 ° C or more and less than 10 ° C. Thus, the manufacturing yield and reliability can be improved, and the used film-forming composition can be reused efficiently. -10- 200827949 Further, the conductor film on the halogen electrode and the photoresist is selected from the group consisting of indium oxide, zinc oxide (IZO), indium oxide, tin oxide, zinc (ITZO), tin oxide, and zinc oxide ( ZTO), and these combination groups are preferred. Thus, the carbon-based compound can be easily dissolved in the conductor film. Borrow can improve productivity. In order to achieve the above object, a method for manufacturing a TFT substrate of the present invention includes a step of forming a thin film transistor on a substrate, a step of laminating a protective insulating film on the substrate and the transistor, and a step of forming a photoresist on the protective layer. The photoresist is formed into a predetermined shape, and a lower portion of the lower portion of the photoresist is formed by an undercut portion, and a conductive material is vapor-deposited on the protective insulating film and the photoresist to form an undercut portion. a step of providing a thin film on the photoreceptor electrode and the photoresist, supplying a stripping composition on the substrate, and stripping the conductive film of the light from the substrate; and removing the photoresist from the strip The used stripping film group included in the conductor film separates the conductor film on the photoresist, and then uses the method of recovering the film composition. This reduces the number of masks. Thereby, the manufacturing steps can be reduced to improve the performance. Further, the conductor film on the photoresist peeled off from the substrate can be almost completely separated by the used film composition. Thereby, the used film-forming composition is utilized without lowering the yield. Further, in order to achieve the above object, the TFT substrate of the present invention comprises a step of forming a thin film transistor on a substrate, and the film is formed by the oxidation of the substrate, and the film is formed on the bite insulator. a stripping method capable of stripping a substrate product and a step of laminating a protective film for a thin film transistor, a step of laminating a photoresist on the protective insulating film, and forming the photoresist into a predetermined shape a step of forming an undercut portion on a lower portion of the photoresist, depositing a conductive material on the protective insulating film and the photoresist, and forming a pixel electrode separated from each other by an undercut portion a step of forming a conductor film on the photoresist, a method of manufacturing a TFT substrate by supplying a stripping composition on the substrate, and stripping the conductor film on the photoresist from the substrate, and forming the TFT substrate The method is a method comprising 20 to 80% by weight of an amine compound and 20 to 80% by weight of an aprotic polar compound. This only dissolves the photoresist and does not cause damage to the pixel electrodes. Thereby, productivity and reliability can be improved. Further, in the range where the performance of the composition of the ruthenium film is not adversely affected, a solvent for suppressing the bubble at the time of supply or a diluent for reducing the viscosity may be added to the film-forming composition. Further, the amine compound contains at least one selected from the group consisting of monoethanolamine, monoisopropanolamine, methylmethanolamine, ethylethanolamine, dimethanolamine, amine ethoxyethanolamine, diethanolamine, and combinations thereof. The compound is preferred. Further, the aprotic polar compound contains at least one selected from the group consisting of N-methyl-2-pyrrolidone, n,N-dimethylacetamide, N,N-dimethylformamide, Ν-Ν- Preferably, dimethylimidazole, dimethylhydrazine, and a combination of these compounds are preferred. In order to achieve the above object, a method for producing a TFT substrate according to the present invention includes the steps of forming a thin film transistor on a substrate, and laminating a protective insulating film on the substrate and the thin film transistor, and using the protective -12- 200827949 The step of laminating the photoresist on the edge film, forming the photoresist into a predetermined shape, forming an undercut portion on the lower portion of the photoresist, and vapor-depositing the protective insulating film and the photoresist a substance, a step of forming a pixel electrode separated from each other by an undercut portion, and a conductor film on the photoresist, and supplying a film-forming composition on the substrate to form a conductor film on the photoresist In the method for producing a TFT substrate which is subjected to the stripping step of the substrate, the stripping composition is a method comprising the alkynyloxypropenylamine compound represented by the following general formula 1. [Chemical 2] 〇

II R1-G-CH2CH2-C-NR2R3 (―般式 1) 其中，Rl、R2、R3各獨立爲碳數1至1〇的烷基。 如此，僅可溶解光阻，對於畫素電極不會造成傷害。 藉此，可提高產率及信賴性。又，烷氧基丙烯醯胺化合物 @ 具有水溶性，可提供無引火性之安全剝膜組成物。 又，欲達成上述目的，本發明的TFT基板之製造方法 - 爲含有，於基板上形成薄膜晶體管之步驟、於前述基板及 薄膜晶體管上層合保護用絶緣膜之步驟、於前述保護用絶 緣膜上層合光阻之步驟、將前述光阻形成爲所定之形狀、 於該光阻之周邊下部形成咬邊（undercut )部之步驟、於 前述保護用絶緣膜及光阻上蒸鍍導電性物質，形成藉由前 述咬邊（underciit )部互相分離之畫素電極及光阻上的導 電體膜之步驟、以及於前述基板上供給剝膜組成物、將前 -13- 200827949 述光阻上的導電體膜自前述基板剝離之剝膜步驟的TFT基 板之製造方法，其爲前述剝膜組成物中-含有碳酸乙烯酯之 方法。 如此，僅溶解光阻，不會對畫素電極造成傷害。藉此 ，可提高產率及信賴性。 又，較佳爲具有由自前述基板所剝離之光阻上的導電 體膜所含有之使用過的剝膜組成物，分離前述光阻上的導 φ 電體膜，再利用該使用過的剝膜組成物之回收步驟。 如此，自基板剝離之光阻上的導電體膜可由使用過的 剝膜組成物幾乎完全地分離。因此，不會降低產率下，可 再利用使用過的剝膜組成物。 又，較佳爲藉由沈澱式分離、離心式分離、及/或過 濾式分離，由前述使用過的剝膜組成物，分離出前述光阻 上之導電體膜。 如此可容易且確實地分離出光阻上的導電體膜。 • 又，較佳前述導電體膜爲可含有至少1種選自氧化銦 •氧化鋅（IZO)、氧化銦·氧化錫（ITO)、非晶體氧化 . 銦·氧化錫（a-ITO )、氧化鈦·氧化鈮、氧化錫·氧化 鋅' 氧化錫·氧化銻、氟摻合氧化錫、及這些組合所成群 之物質。 這些導電體膜因完全不會溶解於剝膜組成物中，故可 排除因溶解微量必要畫素電極而造成製造產率下降的疑慮 °且’導電體膜之比重因比剝膜組成物之比重約高5倍以 ± ’故可容易且良好精度下進行沈澱式分離或離心式分離 -14- 200827949 又，前述剝膜^步驟中，前述剝膜組成物可藉由噴霧方 式，供給於前述基板上。 如此，剝膜組成物溶液進入咬邊（undercut )部，故 光阻上的導電體膜可有效率地由基板進行剝離。又，因可 縮短噴霧時間，故可提高生產性。 又，較佳之前述光阻的下層部爲與該光阻之上層部相 φ 比，對於顯像液之溶解性更高爲佳。 因此可更確實地形成咬邊（undercut)部。藉此，可 提高產率。 又，欲達成上述目的，本發明的剝膜組成物之回收方 法爲，含有於基板上形成薄膜晶體管之步驟、於前述基板 及薄膜晶體管上層合保護用絶緣膜之步驟、於前述保護用 絶緣膜上層合光阻之步驟、將前述光阻形成爲所定之形狀 ，於該光阻之周邊下部形成咬邊（undercut)部之步驟、 Φ 於前述保護用絶緣膜及光阻上蒸鍍導電性物質，形成藉由 前述咬邊（undeTcirt )部互相分離之畫素電極及光阻上的 導電體膜之步驟、於前述基板上供給上述如申請專利範圍 第1項至第8項中任一項所記載的剝膜組成物，將前述光 阻上的導電體膜自前述基板剝離之剝膜步驟、以及回收自 前述基板所剝離之光阻上的導電體膜所含之使用過的剝膜 組成物，將前述光阻上的導電體膜溶解於前述使用過的剝 膜組成物内，再利用該使用過的剝膜組成物之回收步驟的 方法。 -15- 200827949 如此溶解光阻時，導電體膜幾乎不會被溶 畫素電極等必要之導電體膜不會造成傷害。藉 低產率下，可再利用使用過的剝膜組成物。又 出惡臭，可改善作業環境。 欲達成上述目的，本發明的剝膜組成物之 ，含有於基板上形成薄膜晶體管之步驟、於前 膜晶體管上層合保護用絶緣膜之步驟、於前述 φ 膜上層合光阻之步驟、將前述光阻形成爲所定 該光阻之周邊下部形成咬邊（undercut )部之 述保護用絶緣膜及光阻上蒸鍍導電性物質，形 咬邊（undercut )部互相分離之畫素電極及光 體膜之步驟、於前述基板上供給剝膜組成物， 上的導電體膜自前述基板剝離之剝膜步驟、與 板所剝離之光阻上的導電體膜所含有之使用過 物，分離前述光阻上的導電體膜，再利用該使 @ 組成物之回收步驟的方法。 如此，自基板剝離之光阻上的導電體膜可 剝膜組成物幾乎完全地分離。藉此，不會降低 再利用使用過的剝膜組成物。 實施發明的最佳形態 〔剝膜組成物的第一實施形態〕 本發明的剝膜組成物爲製造半導體裝置時 膜組成物。該剝膜組成物使用於如形成後： 解，故對於 此，不會降 ，亦不會釋 回收方法爲 述基板及薄 保護用絶緣 之形狀，於 步驟、於前 成藉由前述 阻上的導電 將前述光阻 由自前述基 的剝膜組成 用過的剝膜 由使用過的 產率下，可 所使用的剝 ®之咬邊（ -16- 200827949 undercut )部的光阻、與於該光阻上所層合之導電體膜。 又，該剝膜組成物藉由溶解於光阻，將不必要的導電體膜 自基板上剝離。如此，藉由不必要的導電體膜自基板剝離 ，具有所定形狀之必要的導電體膜（例如，TFT基板中之 畫素電極）形成於基板上。 且，所謂半導體裝置爲，具有使用晶圓或玻璃板等基 板、與晶體管或受光元件等半導體之電氣元件及/或光學 • 元件的裝置。 本實施形態的剝膜組成物爲含有20〜79.5重量％之胺 系化合物、2〇〜79_5重量％之非質子性極性化合物、與 0.5〜5重量％之碳系化合物。 上述胺系化合物與非質子性極性化合物可作爲使用於 溶解光阻之光阻用剝膜劑。又，碳系化合物可作爲使用於 溶解導電體膜之導電體膜用溶解添加劑。 作爲胺系化合物之例子，可舉出單乙醇胺、單異丙醇 Φ 胺、甲基甲醇胺、乙基乙醇胺、二甲醇胺、胺乙氧基乙醇 胺、二乙醇胺等（圖1，2做參考）。又，上述各胺系化 , 合物可單獨使用或組合2個以上使用。 作爲非質子性極性化合物的例子，可舉出N-甲基-2-吡咯烷酮、N，N-二甲基乙醯胺、N，N-二甲基甲醯胺、N，N-一甲基味卩坐、一*甲基亞砸寺（圖3做爹考）。又，上·述非 質子性極性化合物可單獨使用或組合2個以上使用。 又，剝膜組成物的構成約中，光阻用剝膜劑爲含有胺 系化合物約爲2 0〜7 9 · 5重量％，且含有非質子性極性化合 -17- 200827949 物約爲20〜79.5重量％。如此可僅溶解光阻下不溶解必要 之導電體膜，不會對該導電體膜造成傷害。藉此，可提高 產率及信賴性。 剝膜組成物中含有胺系化合物約爲20〜79.5重量％之 理由爲，若胺系化合物的含量未達約20重量％時，光阻無 法於短時間内充分地溶解；又，胺系化合物的含量若超過 約79.5重量％時，溶解光阻的期間，必要的導電體膜會急 速地腐鈾而誘發損傷之故。又，胺系化合物若超過約79.5 重量％時，剝膜組成物之揮發量會增加，剝膜組成物的成 分比亦有產生變化之顧慮。因此，本發明的剝膜組成物中 ，胺系化合物的含量以約20〜79.5重量％爲佳，較佳爲 3 0〜7 0重量％。 又，剝膜組成物中含有非質子性極性化合物約20〜 79.5重量％之理由爲，若非質子性極性化合物的含量未達 約20重量％時，光阻的剝膜時間會增加，或再利用時的液 體壽命會減短。又，非質子性極性化合物的含量若超過約 79.5重量％，剝膜光阻時，恐怕必要之導電體膜會有腐蝕 之顧慮。因此，本發明的剝膜組成物中，非質子性極性化 合物的含量以約20〜79·5重量％爲佳，較佳爲約30〜70 重量％。 且，剝膜組成物中，以不會對該剝膜組成物之性能造 成壞影響之範圍內，可添加抑制供給時的起泡的溶劑、或 使用於減低黏度的稀釋劑等。 又，作爲碳系化合物可含有至少1種選自下述一般式 -18- 200827949 2，3所示羧酸、及這些組合所成群之化合物。 R-COOH ( 一般式 2) 其中，R表示碳數1至10的烷基、芳基。 HOCO-R-COOH ( 一般式 3) 其中，R表示碳數1至1 0的烷基、芳基。 例如，作爲羧酸的例子，可舉出乙酸（CH3COOH、 pKa (解離定數）=4.74 )、丙酸（CH3CH2COOH、pKa = 4·88)、異丁酸（（CH3)2CHCOOH、pKa = 4.86)、二甲基丙酸 ((CH3)3CCOOH、pKa = 5.05)、酪酸（CH3(CH2)2COOH、 pKa = 4.82)、吉草酸（CH3(CH2)3COOH、pKa = 4.86)等。又， 上述各羧酸可單獨使用或組合2個以上使用。 又，剝膜組成物的構成爲含有約0.5〜5重量％的碳系 化合物。如此於剝膜步驟中，僅溶解光阻下不溶解必要之 導電體膜，不會對該導電體膜造成傷害。藉此，可提高產 率及信賴性。又，回收步驟中，使用過的剝膜組成物中溶 解導電體膜，可再利用使用過的剝膜組成物。 且，所謂使用過的剝膜組成物爲，自基板經剝離之光 阻上的導電體膜所含之剝膜組成物。 又，剝膜組成物中含有碳系化合物約0.5〜5重量％之 理由爲，若碳系化合物的含量未達約0.5重量％時，於回 收步驟中，使用過的剝膜組成物中溶解導電體膜所使用的 時間會增加，可能會縮短再利用時的液體壽命。又，碳系 化合物之含量若超過約5重量％，於剝膜光阻時，會有腐 蝕必要導電體膜之顧慮。因此，本發明的剝膜組成物中， -19- 200827949 碳系化合物的含量以約0.5〜5重量％爲佳，較佳爲約2〜 4重量％。 其中較佳爲將上述碳系化合物之pKa (酸解離定數） 爲4.0以上5.2以下。如此，剝膜步驟中，不會對必要之 導電體膜造成傷害。又，可更有效地溶解使用過的剝膜組 成物。 例如，過去例子中，作爲導電體膜用溶解添加劑所使 φ 用之硫代乙醇酸爲對於pKa = 3.82而言，上述乙酸、丙酸 、異丁酸、二甲基丙酸、丁酸、吉草酸等爲pKa (酸解離 定數）約4.0以上約5.2以下。即，上述羧酸與硫代乙醇 酸相比顯示較大値，羧酸與硫代乙醇酸相比爲弱酸。藉此 ，剝膜步驟中，剝膜組成物溶解光阻時，可迴避溶解必要 之導電體膜的不當情況。 又，使pKa爲約4.0以上約5.2以下的理由爲，pKa 若未達4.0時，會溶解必要之導電體膜，提高影響品質之 • 可能性。又，pKa若超過5.2時，溶解經剝離的無須之導 電體膜的時間會拉長，使得效率降低。 如此，有關本實施形態之剝膜組成物，藉由含有碳系 化合物，與含有過去的硫醇酸系化合物之情況相比，溶解 光阻時，導電體膜幾乎不會被溶解，故不會對畫素電極等 必要的導電體膜造成傷害。藉此，可提高製造產率及信賴 性。又、亦不會釋出惡臭，可改善作業環境。 〔剝膜組成物之第二實施形態〕 -20- 200827949 本實施形態之剝膜組成物的構成爲含有碳酸乙烯酯、 與0.5〜5重量％之碳系化合-物之構成。即，與上述第一實 施形態相比，其相異點在於取代胺系化合物及非質子性極 性化合物中含有碳酸乙烯酯。 且，其他構成幾乎與第一實施形態之剝膜組成物相同 〇 本實施形態的剝膜組成物具有幾乎與第一實施形態之 φ 剝膜組成物的相同效果，可提高製造產率及信賴性。 〔剝膜組成物之第三實施形態〕. 本實施形態的剝膜組成物之構成爲，含有烷氧基丙烯 醯胺化合物、與0.5〜5重量％之碳系化合物。即，與上述 第一實施形態相比，其相異點在於取代胺系化合物及非質 子性極性化合物，含有烷氧基丙烯醯胺化合物。 且，其他構成幾乎與第一賨施形態之剝膜組成物相同 〇 又，烷氧基丙烯醯胺化合物可含有至少1種選自下述 一般式1所示化合物、及這些組合所成群之化合物。 [化3] 〇 !1 RI-O-CH2CH2—C-NR2R3 (―般式 1) 其中，R1、R2、R3各獨立爲碳數1至10的烷基。 -21 - 200827949 例如，作爲烷氧基丙烯醯胺化合物之例子，可舉出 N，N-二甲基-n-丁氧基丙烯醯胺、N，N-二乙基-n-丁氧基丙 烯醯胺等。又，上述各烷氧基丙烯醯胺化合物可單獨使用 或組合2個以上使用。 本實施形態的剝膜組成物幾乎具有與第一實施形態之 剝膜組成物相同效果，可提高製造產率及信賴性。又，烷 氧基丙烯醯胺化合物具有水溶性，本實施形態之剝膜組成 • 物可以水溶液形式使用。此時，水的含有量約未達50重 量％，較佳爲約10〜40重量％，較佳爲約20〜30重量％。 藉此本實施形態之剝膜組成物可無引火性下提高安全性。 〔TFT基板之製造方法中的第一實施形態〕 圖4表示欲說明本發明的第一實施形態中之TFT基板 的製造方法之槪略流程圖。 圖4中，首先於基板1〇1〇上形成薄膜晶體管1 05 0 ( •階段 S 1 0 0 1 )。 其次，對於薄膜晶體管1 050之形成方法，參考圖面 説明。 圖5表示欲說明本發明的第一實施形態中之TFT基板 的製造方法之槪略圖，（a )表示形成閘配線及閘電極， 層合閘絶緣膜之平面圖，（b )表示A-A擴大截面圖。 圖5中，首先準備玻璃基板1 0 1 0，藉由微影技術法形 成由A1 (鋁）等導電體薄膜所成之閘配線i 02 i及閘電極 1 022 °繼續於露出之玻璃基板1010、閘配線1〇21及閘電 -22- 200827949 極1022上層合閘絶緣膜1 023。 且，雖無圖示，形成閘配線1021及閘電極1022時使 用第一光罩。 圖6表示欲說明本發明的第一實施形態中之TFT基板 的製造方法之槪略圖，（a)表示形成薄膜晶體管，層合 保護用絶緣膜之平面圖，（b)表示B-B擴大截面圖。 圖6中，首先於閘絶緣膜1 023上，形成電源（source )配線1031、電源（source)電極 1 032、通道部 105 1、 及汲極（drain)電極1042。藉此，玻璃基板1010上形成 薄膜晶體管1 050 (階段S1001)。其次，玻璃基板1010 及薄膜晶體管1 050上層合保護用絶緣膜1 054 (階段 S 1 002 ) 〇 本實施形態中，形成電源（source )配線1031、電源 (source)電極 1032、通道部 1051、及汲極（drain)電 極1 042時，使用網目曝光技術（及第二網目光罩（無圖 示））。即，首先於閘絶緣膜1 023上，以非晶體矽薄膜 1 052、η型非晶體矽薄膜1 053、鉬/鋁/鉬薄膜等導電體薄 膜1033、及光阻（無圖示）之順次下進行層合。其次，雖 無圖示，使用網目曝光技術形成光阻，藉由第一鈾刻形成 電源（source)配線 103 1。且，形成電源（source )電極 1 032、通道部1051及汲極（drain)電極1042所成部份。 繼續再形成光阻，藉由第二選擇性蝕刻，進行通道部1 05 1 之上方的導電體薄膜1 03 3及η型非晶體矽薄膜1 053之蝕 刻，形成通道部 1051、電源（source)電極 1 032及汲極 -23 - 200827949 (drain)電極1042。其次，於電源（source)配線1031 、薄膜晶體管1 050及閘絶緣膜1 023上層合保護用絶緣膜 1 054 (階段 S 1 002 )。 其次，如圖4所示，保護用絶緣膜1 054上層合光阻 1〇55(階段S 1 003 )。繼續，使用網目曝光技術（及第三 網目光罩（無圖示）），將層合之光阻1055形成爲所定 形狀後進行蝕刻。且再形成光阻1 05 5，於再形成之光阻（ 再形成光阻1553)的周邊下部形成咬邊（undercut)部 1 5 54 (階段 S 1 004 )。 其次，光阻1 05 5及咬邊（undercut)部1 5 54之形成 方法，參考圖面説明。 圖7表示欲說明本發明的第一實施形態中之TFT基板 的製造方法之槪略圖，（a)表示保護用絶緣膜上的光阻 形成爲所定形狀之平面圖，（b)表示C-C擴大截面圖。 圖7中，首先於保護用絶緣膜1 054上層合光阻105 5 (階段S 1 003 )。繼續，藉由網目曝光技術，光阻1055 形成爲所定形狀。即，光阻1 05 5爲，於汲極（drain)電 極1042的上方欲形成接觸孔（contact hole) 1541而形成 開口部1 056。且，於形成畫素電極1612之部份（圖11做 參考），形成厚度較薄之網目曝光光阻1552，未形成畫素 電極1612之部份則形成厚度較厚的全曝光光阻1551。 圖8表示欲說明本發明的第一實施形態中之TFT基板 的製造方法之槪略圖，（a )表示形成接觸孔（contact hole )之擴大截面圖，（b )表示光阻經再形成，形成咬 -24 - 200827949 邊（undercut)部之擴大截面圖，（c)表不D邰詳細圖。 圖8(a)中，首先使用藉由網目曝光技術所形成之光 阻1 055，對於保護用絶緣膜1 054進行蝕刻（通常爲乾蝕 刻）。再形成使用於將畫素電極1 6 1 2與汲極（drain )電 極 1 042 連接之接觸孔（contact hole ) 1 54 1。 其次，如圖8 ( b )所示，對於光阻1 05 5進行再形成 。即，光阻1 05 5藉由氧電漿硏磨加工徐徐地除去’將網 目曝光光阻1 5 52全部除去。此時，全曝光光阻1551由上 方徐徐除去，成爲厚度較薄之再形成光阻1 5 5 3，作爲光阻 具有發揮功能之厚度。又，再形成光阻1 553的上面維持 所定形狀。繼續於顯像液中藉由再顯像，於上述所定形狀 之周邊下部形成咬邊（undercut)部1 554 (階段S 1 004 ) 〇 其中較佳爲如圖8 ( c)所示，將再形成光阻1 5 53作 爲由上層光阻1551a與下層光阻1551b所成之二層結構。 上層光阻1551a與下層光阻1551b各對於顯像液之溶解性 不同。又，被設定爲與上層光阻1551a相比，下層光阻 1551b較容易溶解。藉此，可更確實地形成咬邊（ undercut)部15 54，進而可提高產率。 又，欲對於上層光阻1 5 5 1 a與下層光阻1 5 5 1 b賦予溶 解性差，例如可摻合2種類以上之光阻樹脂等而調整成分 。或可利用光反應，對於硬化度設定差値而對於溶解性賦 予差値。 其次，如圖4所示，於玻璃基板1 01 〇的上方蒸鍍透 -25- 200827949 明之導電性物質，形成互相分離之畫素電極1 6 1 2及光阻 上的導電體膜1611 (階段S 1 005 )。 其次，畫素電極1612及光阻上之導電體膜1611的形 成方法，參考圖面説明。 圖9表示欲說明本發明的第一實施形態中之TFT基板 的製造方法之形成導電體膜的槪略圖，（a)表不擴大截 面福，（b )表示E部詳細圖。 φ 圖9中，於玻璃基板1010的上方蒸鍍透明之導電性 物質，形成導電體膜1〇61(彼此分離的畫素電極1612及 光阻上之導電體膜1611)(階段S 1 005 )。即，於玻璃基 板1 0 1 0的上方蒸鍍透明之導電性物質，於再形成光阻 1 5 5 3上形成光阻上之導電體膜1611。又，於露出之汲極 (drain)電極1042及保護用絶緣膜1 054上形成畫素電極 1612。畫素電極1612爲藉由咬邊（undercut )部1 554， 自光阻上之導電體膜1611分離，未以電性連接。該畫素 • 電極1612爲介著接觸孔（contact hole) 1541以電性連 接汲極（drain)電極1〇42。 作爲上述導電性物質，一般使用含有氧化銦·氧化鋅 (IZ0 )、氧化銦•氧化錫·氧化鋅（ITZO )、氧化鋅· 氧化錫（ZTO )、及這些組合所成群者。如此，剝膜組成 物於回收步驟中被昇溫時，碳系化合物可容易地溶解導電 體膜。藉此’可提高生產性。 且，作爲導電性物質，上述者爲佳，但並未僅限定於 此，例如於剝膜步驟中，藉由剝膜組成物幾乎未被溶解， -26- 200827949 但於回收步驟中可溶解於剝膜組成物者即可。 又，選自氧化銦·氧化-錫（ITO )、非晶體氧化銦· 氧化錫（a-ITO )、氧化鈦•氧化鈮、氧化錫•氧化鋅、 氧化錫·氧化銻、氟摻合氧化錫、及這些組合所成群之這 些導電體膜於本發明的剝膜組成物中完全不溶解。 其次，如圖1 0所示，於玻璃基板1 0 1 0供給剝膜組成 物，將光阻上的導電體膜1 6 1 1由玻璃基板1 0 1 0剝離（階 • 段S 1 006 )。繼續，於使用過的剝膜組成物溶解光阻上之 導電體膜1611後再利用（階段S 1 007 )。 其次，將光阻上的導電體膜1611由玻璃基板1010剝 離之方法、及於使用過的剝膜組成物溶解光阻上之導電體 膜1611後，再利用使用過的剝膜組成物之方法，參考圖 面説明。 圖10表示欲說明本發明的第一實施形態中之TFT基 板的製造方法中，剝膜光阻上之導電體膜的剝膜步驟、及 II 再利用使用過的剝膜組成物之回收步驟的槪略截面圖。 圖10中，導電體賸1061經層合之玻璃基板1010爲 ，藉由作爲剝膜步驟之剝膜裝置1 0 07溶解再形成光阻 1 5 5 3，可剝膜光阻上之導電體膜1611 (階段S 1 006 )。 剝膜裝置1 007係由貯藏含有剝膜組成物之剝離液 1 070被之貯藏槽1071a，1071b、於玻璃基板1010上將剝 離液1070以噴霧狀進行噴射之噴霧嘴10 72、幫浦1073、 吸入導管1 074、回收被噴射之剝離液1 070之回收槽1075 及回收導管1 076所成。又，回收導管1 076爲，一端銜接 -27- 200827949 於回收槽1075，介著各設置電磁閥1761，1762之2根分 支管，另一端-與貯藏槽l〇71a，1071b連接。因此，例如 若關閉電磁閥1761而開放電磁閥1 762時，回收槽1〇75 之剝離液1〇7〇流入貯藏槽。且，吸入導管74爲一 端銜接於幫浦73，介著各設置電磁閥1 7 1 1，1 7 1 2之2根 分支管，另一端與貯藏槽l〇71a，1071b連接。因此，例 如若關閉電磁閥1 7 1 2而開放電磁閥1 7 1 1時，貯藏槽 _ 107 1a之剝離液1 070被幫浦1073吸入。 剝膜裝置1 007中作爲剝膜組成物可使用上述各實施 形態之剝膜組成物的任一種。藉此，溶解再形成光阻1 5 5 3 時，畫素電極 1612幾乎不會被溶解，故對於畫素電極 1 6 1 2不會造成傷害。藉此，可提高製造產率及信賴性。又 ，亦不會釋出惡臭，可改善作業環境。 其次，對於上述構成之剝膜裝置1 007的動作做説明 〇 ·' 首先，剝膜裝置1 007爲，於貯藏槽l〇71a貯藏低溫 (一般約未達50°C )之剝離液1 070。且，電磁閥1711爲 . 開放，電磁閥1761爲關閉’電磁閥1762爲開放’電磁閥 1712爲關閉的狀態。於此，貯藏於貯藏槽1071a之剝離液 1 07 0爲，光阻上之導電體膜1611全溶解於剝膜組成物。 其次，幫浦1073起作用時，貯藏槽1071a的剝離液 1 070介著電磁閥1711及吸入導管1 074於幫浦1 073吸入 ，自噴霧嘴1072往玻璃基板1010吹。 本實施形態之剝膜步驟中，剝離液1 070由噴霧嘴 -28- 200827949 1 072以噴霧狀噴射。藉此，通過微小隙間於咬邊（ undercut)部1 554流入剝離液1 070。藉此，可將光阻上 之導電體膜1 6 1 1自玻璃基板1 0 1 0有效地剝離（階段 S 1 006 )。於此，往玻璃基板1010吹的剝離液1 070爲， 剝膜組成物之碳系化合物爲弱酸，且藉由低溫下可防止溶 解必要之畫素電極1612的不適當情況。 且，圖10表示剝膜中之狀態，再形成光阻1 5 53及光 Φ 阻上的導電體膜1611爲部份殘留。 如此，上述剝膜組成物爲溶解再形成光阻1 5 5 3，於再 形成光阻1 5 5 3的上面所形成的光阻上之導電體膜1611皆 可被玻璃基板1010分離。 又，剝膜組成物爲不溶解導電體膜1061。因此，可選 出最適合的剝膜條件（噴霧壓力或噴霧噴射時間等）。一 般使用本實施形態之剝膜組成物時，噴霧噴射時間約0.5 〜5分鐘，較佳爲約1〜3分鐘。又，再形成光阻1 5 5 3之 # 溶解爲，剝膜組成物的溫度於約30°C以上未達60°C的溫 度範圍下進行爲佳，約40°C以上50°C以下爲佳。 、剝膜步驟中的剝膜組成物之溫度設定爲約3 0 °C以上未 達60 °C之理由爲，比約3 0 °C之低溫時，溶解再形成光阻 1 5 5 3的時間會過長，會使生產效率降低。又，約60°C以 上之高溫時，碳系化合物的溶解速度回上昇，溶解畫素電 極1 6 1 2，會有製造產率降低的顧慮。 其次，往玻璃基板1〇1〇吹的剝離液1070爲，溶解玻 璃基板1 0 1 0之再形成光阻1 5 5 3，含有經剝離的光阻上之 -29- 200827949 導電體膜1611的狀態下，介著回收槽1075、回收導管 1 076及電磁閥1 762，流入貯藏槽171b。此時，經剝離的 光阻上之導電體膜1611於剝離液1 070中以粒子或絲狀體 等微小片形式混入。因此含有光阻上之導電體膜1 6 1 1的 剝離液1 070 (有時稱爲使用過的剝膜組成物）。流入貯藏 槽1071b時，貯藏槽l〇71b中，沈澱光阻上的導電體膜 1 6 1 1，碳系化合物使光阻上的導電體膜1 6 1 1開始溶解。 於此，較佳爲於貯藏槽107 1b設置溫度控制手段及攪 拌手段（無圖示），提高剝離液1 070之溫度爲佳。即， 光阻上的導電體膜1 6 1 1之溶解爲，剝膜組成物的溫度約 60°C以上未達100°C之溫度範圍下進行爲佳，更佳爲約70 °C以上80 °c以下。一般使用上述實施形態之剝膜組成物時 ，溶解光阻上之導電體膜1611的時間約10〜30分鐘。 回收步驟中，使剝膜組成物之溫度爲約60°C以上未達 1 00 °C的理由爲，比約60 °C更低溫時，因碳系化合物爲弱 酸，無法溶解光阻上之導電體膜1611。又，約100 °C以上 之高溫時，剝膜組成物中的成分會蒸發，使得組成產生變 動。 如此，於回收步驟中，使剝膜組成物昇溫時，溶解速 度會加速。因此，可將光阻上的導電體膜1611於更較短 時間下溶解。特別爲剝膜組成物之溫度於約7 0 °C以上時， 提高碳系化合物中之酸的活性，顯示與強酸幾乎相同的作 用。藉此，容易溶解光阻上之導電體膜1611。 其次，幫浦1 073停止後關閉電磁閥1 762，經過所定 -30- 200827949 時間後貯藏槽1071b内完全溶解光阻上之導1 未含光阻上之導電體膜1611的剝離液1070 1071b。該經再生之剝離液1 070中，電磁閥 ，電磁閥1761爲開放，電磁閥1 762爲關閉 爲開放後，藉由幫浦1 073自吸入導管1074 嘴1072往玻璃基板1010吹。即，由使用過 溶解光阻上的導電體膜1 6 1 1後再利用（階段 圖1 1表示欲說明本發明的第一實施形菌 板的製造方法之槪略圖，（a)表示形成畫： 圖，（b)表示F-F擴大截面圖。 圖11中，TFT基板1001爲藉由剝膜步 光阻1 5 5 3及光阻上之導電體膜1611，露出1 及保護用絶緣膜1 054。 且，本實施形態之TFT基板1001的製 第一光罩、第二網目光罩及第三網目光罩之 此，本實施形態的TFT基板1001之製造方 步驟而使生產性良好。 所謂如此本實施形態之TFT基板1001 可減少光罩數。藉此，減少製造步驟可提高 藉由含有碳系化合物，與含有硫醇酸系化合 ，溶解光阻時，導電體膜1061幾乎不被溶 於畫素電極1612不會造成傷害，可提高製 性。又，亦不會釋出惡臭，可改善作業環境 驟中所使用的使用過的剝膜組成物之回收可 體膜1 6 1 1， 貯藏於貯藏槽 1071爲關閉 ，電磁閥1762 吸入，自噴霧 的剝膜組成物 S 1 007 ) 〇 _中之TFT基 奪電極之平面 驟除去再形成 S素電極1612 造方法爲使用 三片光罩。藉 法可減少製造 的製造方法， 生產性。又， 物的情況相比 解。藉此，對 造產率及信賴 。且，剝膜步 確實且有效率 -31 - 200827949 地進行，進一步提高品質及生產性。 其次，對於上述TFT基板之製造方法的實施例及比較 例做説明。 【實施方式】 [實施例1] 首先作爲上述第一實施形態中之剝膜組成物，準備表 1所不之剝離液a，b，c，d，e。 [表1] 實施例1 剝離液組成 胺化合物 非質子性極性溶劑 羧酸化合1 勿 化合物 wt% 化合物 wt% 化合物 wt% 剝離液a 單乙醇胺 30 N-甲基吡咯烷酮 66 乙酸 4 剝離液b 單異丙醇胺 30 N，N-二甲基乙醯胺 66 乙酸 4 剝離液c 甲基甲醇胺 30 N，N-二甲基甲醯胺 66 乙酸 4 剝離液ά 乙基乙醇胺 66 N，N-二甲基咪唑 30 乙酸· 4 剝離液e 二甲醇胺 66 二甲基亞礪 30 丙烯酸 4 作爲玻璃基板準備約100mmxl00mmx0.7mm之正方形 狀的玻璃基板，以純水噴淋下洗淨後，將光阻使用轉動塗 佈進行塗佈形成。光阻爲使用日本ΖΕΟΝ製之負型光阻： • ΖΤΝ2464-27。繼續於約80°C下進行約15分鐘燒烤加熱後 ，以曝光強度30〇m J/Cm2下進行曝光。作爲使用之光罩， 使用以約20μπι的條紋與約90μπι的空間之順序設置的條 紋光罩。 其次’於四甲基銨氫氧化物之約2.8wt%水溶液下進 行顯像，得到上述條紋·空間之條紋圖型。顯像後以純水 -32- 200827949 噴淋洗淨，藉由吹氣除去洗淨水後於約130°C下進行約15 分箭的燒烤加熱。 其次，於上述玻璃基板上，使用IZO ( ln203 : ZnO = 約 90 : 10wt% )之標的，以陰極噴鍍法成膜成厚度約 lOOnm之薄膜。 將剝離液a，b，c，d，e加溫至約40°C後，將上述所 得之玻璃基板於上述剝離液中浸漬2分鐘，後進行光阻剝 • 離，以純水洗淨並吹氣後，於乾燥器進行乾燥。藉此得到 由IZO所成之薄膜（寬約90μιη)、及形成約20μπι之空 間的玻璃基板。 將使用過的剝離液a，b，c，d，e之内容物以光學顯 微鏡進行觀察時，確認存在經剝離的寬度約20 μιη之線圈 狀ΙΖΟ薄膜（圖12做參考）。 將上述使用過的剝離液a，b，c，d，e於約7 0下， 進行約10分鐘攪拌時，上述線圈狀之IZO薄膜經溶解並 Φ 無觀察到線圈狀之IZO薄膜。此剝離液a，b，c，d，e再 度進行光阻剝離，確認可進行光阻剝離。又，經剝離之基 板上並無觀察到線圏狀IZO、或粉末狀IZO。 [實施例2] 首先作爲上述第二實施形態之剝膜組成物，準備表2 所示剝離液f，g。 -33-II R1-G-CH2CH2-C-NR2R3 ("General Formula 1) wherein R1, R2, and R3 are each independently an alkyl group having 1 to 1 Å carbon atoms. In this way, only the photoresist can be dissolved, and no damage is caused to the pixel electrode. Thereby, productivity and reliability can be improved. Further, the alkoxypropenylamine compound @ is water-soluble and provides a non-flammable and safe film-forming composition. Further, in order to achieve the above object, a method of manufacturing a TFT substrate of the present invention includes a step of forming a thin film transistor on a substrate, a step of laminating a protective insulating film on the substrate and the thin film transistor, and an upper layer of the protective insulating film. a step of combining the photoresist, forming the photoresist into a predetermined shape, forming an undercut portion on a lower portion of the photoresist, and depositing a conductive material on the protective insulating film and the photoresist to form a photoresist a step of separating the pixel electrode and the conductor film on the photoresist by the underciating portion, and supplying the stripping composition on the substrate, and the conductor on the photoresist of the above -13-200827949 A method for producing a TFT substrate in which a film is peeled off from the substrate, which is a method of containing a vinyl carbonate in the film-forming composition. In this way, only the photoresist is dissolved, and no damage is caused to the pixel electrode. Thereby, productivity and reliability can be improved. Further, it is preferable to have a used film-forming composition contained in the conductor film on the photoresist peeled from the substrate, and to separate the conductive film on the photoresist, and to use the used stripping film. The recovery step of the film composition. Thus, the conductor film on the photoresist peeled off from the substrate can be almost completely separated by the used film-forming composition. Therefore, the used film-forming composition can be reused without lowering the yield. Further, it is preferred that the conductor film on the photoresist is separated from the used film-forming composition by precipitation separation, centrifugal separation, and/or filtration separation. Thus, the conductor film on the photoresist can be easily and surely separated. Further, it is preferable that the conductor film contains at least one selected from the group consisting of indium oxide, zinc oxide (IZO), indium oxide, tin oxide (ITO), amorphous oxide, indium tin oxide (a-ITO), and oxidation. Titanium, cerium oxide, tin oxide, zinc oxide, tin oxide, cerium oxide, fluorine-doped tin oxide, and a group of these combinations. Since these conductor films are not dissolved in the film-forming composition at all, it is possible to eliminate the concern that the manufacturing yield is lowered due to the dissolution of a trace amount of the necessary pixel electrode, and the specific gravity of the conductor film is proportional to the specific gravity of the film-forming composition. Precipitation separation or centrifugal separation can be carried out easily and with good precision at a height of about 5 times. - In addition, in the stripping step, the stripping composition can be supplied to the substrate by spraying. on. Thus, the film-forming composition solution enters the undercut portion, so that the conductor film on the photoresist can be efficiently peeled off from the substrate. Moreover, since the spray time can be shortened, productivity can be improved. Further, it is preferable that the lower portion of the photoresist has a ratio of φ to the upper portion of the photoresist, and the solubility in the developing solution is preferably higher. Therefore, an undercut portion can be formed more surely. Thereby, the yield can be improved. Further, in order to achieve the above object, a method for recovering a film-forming composition of the present invention includes a step of forming a thin film transistor on a substrate, a step of laminating a protective insulating film on the substrate and the thin film transistor, and the protective insulating film. a step of forming a photoresist on the upper layer, forming the photoresist into a predetermined shape, forming an undercut portion on a lower portion of the photoresist, and depositing a conductive material on the protective insulating film and the photoresist a step of forming a pixel electrode separated from each other by an undeTcirt portion and a conductor film on the photoresist, and supplying the above-mentioned substrate to any one of items 1 to 8 of the patent application scope The stripping composition described above, the stripping step of peeling off the conductor film on the photoresist from the substrate, and the used stripping film composition contained in the conductor film on the photoresist stripped from the substrate A method in which the conductor film on the photoresist is dissolved in the used film-forming composition, and the used stripping film composition is recovered. -15- 200827949 When the photoresist is so dissolved, the conductor film is hardly damaged by the necessary conductive film such as a lytic electrode. At low yields, the used filming composition can be reused. Another stench can improve the working environment. In order to achieve the above object, the film-forming composition of the present invention comprises the steps of forming a thin film transistor on a substrate, laminating a protective insulating film on the front film transistor, and laminating the photoresist on the φ film, and The photoresist is formed of a protective insulating film that forms an undercut portion at a lower portion of the photoresist, and a conductive material that is vapor-deposited on the photoresist, and a photoreceptor electrode and a light body that are separated from each other by an undercut portion. a step of providing a film-forming composition on the substrate, a step of stripping the conductor film from the substrate, and a used substance contained in the conductor film on the photoresist peeled off from the board, separating the light The conductive film that is blocked is reused by the method of recycling the @ composition. Thus, the conductor film peelable film composition on the photoresist peeled off from the substrate is almost completely separated. Thereby, the used film-forming composition is not reduced. BEST MODE FOR CARRYING OUT THE INVENTION [First embodiment of the film-forming composition] The film-forming composition of the present invention is a film composition when a semiconductor device is produced. The stripping film composition is used after the formation of the solution, so that it does not fall, and the recovery method is not the shape of the substrate and the thin protective insulating layer, and the step is formed by the aforementioned resistance. Conductively smearing the aforementioned photoresist from the stripping film of the foregoing base, and using the peeling edge of the stripping edge (-16-200827949 undercut) of the used film at the used yield, The conductor film laminated on the photoresist. Further, the film-forming composition is peeled off from the substrate by being dissolved in the photoresist to form an unnecessary conductor film. In this manner, an unnecessary conductor film (e.g., a pixel electrode in the TFT substrate) having a predetermined shape is formed on the substrate by being peeled off from the substrate by an unnecessary conductor film. Further, the semiconductor device is a device including a substrate such as a wafer or a glass plate, and an electric component and/or an optical element of a semiconductor such as a transistor or a light receiving element. The film-forming composition of the present embodiment contains 20 to 79.5 wt% of an amine compound, 2 to 79_5 wt% of an aprotic polar compound, and 0.5 to 5 wt% of a carbon-based compound. The above amine compound and aprotic polar compound can be used as a photoresist for stripping agents for dissolving photoresist. Further, the carbon-based compound can be used as a dissolution additive for a conductor film used for dissolving a conductor film. Examples of the amine compound include monoethanolamine, monoisopropanol Φ amine, methylmethanolamine, ethylethanolamine, dimethanolamine, amine ethoxyethanolamine, diethanolamine, etc. (Fig. 1, 2 for reference). . Further, each of the above amine-based compounds may be used singly or in combination of two or more. Examples of the aprotic polar compound include N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, and N,N-methyl group. Miso sitting, a * methyl Aachen Temple (Figure 3 to do the test). Further, the above-mentioned non-protic polar compounds may be used singly or in combination of two or more. Further, in the composition of the stripping film composition, the photoresist stripping agent contains an amine compound of about 20 to 79.5% by weight, and contains an aprotic polar compound of -17-200827949. 79.5 wt%. In this way, only the necessary conductive film is not dissolved under the photoresist, and the conductive film is not damaged. Thereby, productivity and reliability can be improved. The reason why the film-forming composition contains an amine-based compound in an amount of about 20 to 79.5 wt% is that if the content of the amine-based compound is less than about 20% by weight, the photoresist cannot be sufficiently dissolved in a short time; When the content exceeds about 79.5% by weight, during the period in which the photoresist is dissolved, the necessary conductive film rapidly uranizes and induces damage. Further, when the amine compound exceeds about 79.5% by weight, the amount of volatilization of the film-forming composition increases, and the composition ratio of the film-forming composition also changes. Therefore, in the film-forming composition of the present invention, the content of the amine compound is preferably from 20 to 79.5 % by weight, preferably from 30 to 70 % by weight. Further, the reason why the film-forming composition contains an aprotic polar compound of about 20 to 79.5% by weight is that if the content of the aprotic polar compound is less than about 20% by weight, the filming time of the photoresist increases or is reused. The liquid life will be shortened. Further, when the content of the aprotic polar compound exceeds about 79.5% by weight, there is a concern that the conductive film may be corroded when the photoresist is peeled off. Accordingly, in the film-forming composition of the present invention, the content of the aprotic polar compound is preferably from about 20 to 79.5% by weight, preferably from about 30 to 70% by weight. Further, in the film-forming composition, a solvent for suppressing foaming at the time of supply or a diluent for reducing viscosity may be added in a range which does not adversely affect the performance of the film-forming composition. Further, the carbon-based compound may contain at least one compound selected from the group consisting of carboxylic acids represented by the following general formulas -18 to 200827949 2, 3, and a group of these combinations. R-COOH (General formula 2) wherein R represents an alkyl group or an aryl group having 1 to 10 carbon atoms. HOCO-R-COOH (General Formula 3) wherein R represents an alkyl group or an aryl group having 1 to 10 carbon atoms. For example, examples of the carboxylic acid include acetic acid (CH3COOH, pKa (dissociation constant) = 4.74), propionic acid (CH3CH2COOH, pKa = 4.88), isobutyric acid ((CH3)2CHCOOH, pKa = 4.86). , dimethylpropionic acid ((CH3)3CCOOH, pKa = 5.05), butyric acid (CH3(CH2)2COOH, pKa = 4.82), oxalic acid (CH3(CH2)3COOH, pKa = 4.86), and the like. Further, each of the above carboxylic acids may be used singly or in combination of two or more. Further, the film-forming composition has a composition of about 0.5 to 5% by weight of a carbon-based compound. In the stripping step as described above, only the necessary electroconductive film is not dissolved under the photoresist, and the conductor film is not damaged. This will increase productivity and reliability. Further, in the recovery step, the used film-forming composition dissolves the conductor film, and the used film-forming composition can be reused. Further, the used film-forming composition is a film-forming composition contained in the conductor film on the photoresist which is peeled off from the substrate. Further, the reason why the film-forming composition contains the carbon-based compound in an amount of about 0.5 to 5% by weight is that when the content of the carbon-based compound is less than about 0.5% by weight, the conductive film is dissolved in the used film-forming composition in the recovery step. The time taken for the body membrane increases, which may shorten the life of the liquid during reuse. Further, when the content of the carbon-based compound exceeds about 5% by weight, there is a concern that the conductive film is required to be corroded when the photoresist is peeled off. Therefore, in the film-forming composition of the present invention, the content of the -19-200827949 carbon-based compound is preferably from 0.5 to 5% by weight, preferably from about 2 to 4% by weight. Among them, the pKa (acid dissociation number) of the above carbon-based compound is preferably 4.0 or more and 5.2 or less. Thus, in the stripping step, the necessary conductive film is not damaged. Further, the used film-peeling composition can be dissolved more effectively. For example, in the past examples, the thioglycolic acid used for φ as a dissolving additive for a conductor film is the above-mentioned acetic acid, propionic acid, isobutyric acid, dimethylpropionic acid, butyric acid, and glycerol for pKa = 3.82. The oxalic acid or the like has a pKa (acid dissociation number) of about 4.0 or more and about 5.2 or less. That is, the above carboxylic acid shows a larger amount of oxime than thioglycolic acid, and the carboxylic acid is weaker than thioglycolic acid. Thereby, in the stripping step, when the stripping composition dissolves the photoresist, it is possible to avoid the improper situation of dissolving the necessary electroconductive film. Further, the reason why the pKa is about 4.0 or more and about 5.2 or less is that if the pKa is less than 4.0, the necessary electroconductive film is dissolved, and the possibility of affecting the quality is improved. Further, when the pKa exceeds 5.2, the time for dissolving the peeled unnecessary conductive film is elongated, so that the efficiency is lowered. As described above, the film-forming composition of the present embodiment contains a carbon-based compound, and when the photoresist is dissolved, the conductor film is hardly dissolved as compared with the case where the conventional thiol-based compound is contained, so that the film is not dissolved. Injury to the necessary conductor film such as a pixel electrode. Thereby, the manufacturing yield and reliability can be improved. Also, it will not release stench and improve the working environment. [Second embodiment of the film-forming composition] -20- 200827949 The film-forming composition of the present embodiment has a structure containing a vinyl carbonate and a carbon-based compound of 0.5 to 5% by weight. That is, the difference from the first embodiment is that the substituted amine compound and the aprotic polar compound contain ethylene carbonate. Further, the other configuration is almost the same as that of the stripping composition of the first embodiment. The stripping composition of the present embodiment has almost the same effect as the φ stripping composition of the first embodiment, and the manufacturing yield and reliability can be improved. . [Third embodiment of the film-forming composition] The film-forming composition of the present embodiment has a structure containing an alkoxypropyleneamine compound and 0.5 to 5% by weight of a carbon-based compound. That is, the difference from the first embodiment is that the substituted amine compound and the aprotic polar compound contain an alkoxy acrylamide compound. Further, the other composition is almost the same as the stripping composition of the first embodiment, and the alkoxy acrylamide compound may contain at least one compound selected from the following general formula 1 and a combination thereof. Compound. RI !1 RI-O-CH2CH2-C-NR2R3 ("General Formula 1) wherein R1, R2, and R3 are each independently an alkyl group having 1 to 10 carbon atoms. -21 - 200827949 For example, as an example of the alkoxy acrylamide compound, N,N-dimethyl-n-butoxypropenylamine, N,N-diethyl-n-butoxy group Acrylamide and the like. Further, each of the above alkoxy acrylamide compounds may be used singly or in combination of two or more. The film-forming composition of the present embodiment has almost the same effect as the film-forming composition of the first embodiment, and the production yield and reliability can be improved. Further, the alkoxy acrylamide compound has water solubility, and the film-forming composition of the present embodiment can be used in the form of an aqueous solution. At this time, the water content is about 50% by weight, preferably about 10 to 40% by weight, preferably about 20 to 30% by weight. Thereby, the film-forming composition of the present embodiment can improve safety without ignitability. [First Embodiment of Manufacturing Method of TFT Substrate] Fig. 4 is a schematic flow chart for explaining a method of manufacturing a TFT substrate in the first embodiment of the present invention. In FIG. 4, a thin film transistor 10000 (first stage S 1 0 0 1 ) is first formed on the substrate 1〇1〇. Next, for the method of forming the thin film transistor 1 050, reference is made to the drawings. Fig. 5 is a schematic view showing a method of manufacturing a TFT substrate in the first embodiment of the present invention, wherein (a) shows a plan view of a gate insulating film formed by forming a gate wiring and a gate electrode, and (b) shows an enlarged cross section of AA. . In FIG. 5, first, a glass substrate 1 0 1 0 is prepared, and a gate wiring i 02 i formed by a conductor film such as A1 (aluminum) and a gate electrode 1 022 ° are formed by the lithography method to continue the exposed glass substrate 1010. , gate wiring 1〇21 and sluice -22- 200827949 pole 1022 upper layer closing insulation film 1 023. Further, although not shown, the first photomask is used to form the gate wiring 1021 and the gate electrode 1022. Fig. 6 is a schematic view showing a method of manufacturing a TFT substrate in the first embodiment of the present invention, wherein (a) shows a plan view of a thin film transistor, a protective film for lamination, and (b) shows an enlarged cross-sectional view of B-B. In Fig. 6, first, a power source wiring 1031, a power source electrode 1 032, a channel portion 105 1 , and a drain electrode 1042 are formed on the gate insulating film 1 023. Thereby, the thin film transistor 1 050 is formed on the glass substrate 1010 (stage S1001). Next, the protective insulating film 1 054 is laminated on the glass substrate 1010 and the thin film transistor 1 050 (stage S 1 002 ). In the present embodiment, a power source wiring 1031, a power source electrode 1032, a channel portion 1051, and For the drain electrode 1 042, a mesh exposure technique (and a second mesh mask (not shown)) is used. That is, first, the gate insulating film 1 023 is sequentially formed of an amorphous germanium film 1 052, an n-type amorphous germanium film 1 053, a conductor thin film 1033 such as a molybdenum/aluminum/molybdenum film, and a photoresist (not shown). Laminating is performed below. Next, although not shown, a photoresist is formed using a mesh exposure technique, and a source wiring 103 1 is formed by the first uranium engraving. Further, a portion of the source electrode 1 032, the channel portion 1051, and the drain electrode 1042 is formed. The photoresist is further formed, and the conductive film 103 3 and the n-type amorphous germanium film 1 053 above the channel portion 051 are etched by the second selective etching to form the channel portion 1051 and the power source. Electrode 1 032 and drain -23 - 200827949 (drain) electrode 1042. Next, a protective insulating film 1 054 (stage S 1 002 ) is laminated on the power source wiring 1031, the thin film transistor 1 050, and the gate insulating film 1 023. Next, as shown in Fig. 4, the protective insulating film 1 054 is laminated with a photoresist 1 〇 55 (stage S 1 003 ). Continuing, using the mesh exposure technique (and the third mesh mask (not shown)), the laminated photoresist 1055 is formed into a predetermined shape and then etched. Further, a photoresist 505 is formed, and an undercut portion 1 5 54 (stage S 1 004 ) is formed at a lower portion of the periphery of the reformed photoresist (reformed photoresist 1553). Next, the method of forming the photoresist 105 5 and the undercut portion 1 5 54 will be described with reference to the drawings. FIG. 7 is a schematic view showing a method of manufacturing a TFT substrate according to the first embodiment of the present invention, wherein (a) shows a plan view in which a photoresist on a protective insulating film is formed into a predetermined shape, and (b) shows a CC enlarged cross-sectional view. . In Fig. 7, first, a photoresist 105 5 (stage S 1 003 ) is laminated on the protective insulating film 1 054. Continuing, the photoresist 1055 is formed into a predetermined shape by a mesh exposure technique. That is, the photoresist 205 5 is formed with a contact hole 1541 formed above the drain electrode 1042 to form the opening 1 056. Further, a portion of the pixel electrode 1612 is formed (refer to Fig. 11 for reference) to form a thin mesh exposure photoresist 1552, and a portion of the pixel electrode 1612 is not formed to form a thicker full exposure photoresist 1551. 8 is a schematic view for explaining a method of manufacturing a TFT substrate in the first embodiment of the present invention, wherein (a) shows an enlarged cross-sectional view in which a contact hole is formed, and (b) shows that a photoresist is reformed and formed. Bite-24 - 200827949 Enlarged section of the undercut section, (c) Table of detail. In Fig. 8(a), the protective insulating film 1 054 is first etched (usually dry etching) using the photoresist 1 055 formed by the mesh exposure technique. A contact hole 1 54 1 for connecting the pixel electrode 1 6 1 2 to the drain electrode 1042 is formed. Next, as shown in Fig. 8(b), the photoresist 1 05 5 is reformed. That is, the photoresist 105 5 is slowly removed by the oxygen plasma honing process to remove all of the mesh exposure photoresist 1 5 52 . At this time, the full-exposure resist 1551 is gradually removed from the upper side, and becomes a thinner re-formed photoresist 1 5 5 3 to have a function as a photoresist. Further, the upper surface of the photoresist 1 553 is formed to maintain the predetermined shape. Continuing to re-image in the developing solution, an undercut portion 1 554 (stage S 1 004 ) is formed in the lower portion of the periphery of the predetermined shape, wherein preferably, as shown in FIG. 8(c), The photoresist 1 5 53 is formed as a two-layer structure formed by the upper photoresist 1551a and the lower photoresist 1551b. The upper photoresist 1551a and the lower photoresist 1551b are each different in solubility to the developing liquid. Further, the lower layer resist 1551b is set to be more soluble than the upper layer resist 1551a. Thereby, the undercut portion 1554 can be formed more surely, and the yield can be improved. Further, it is desirable to impart a poor solubility to the upper photoresist 1 5 5 1 a and the lower photoresist 1 5 5 1 b. For example, two or more kinds of photoresist resins may be blended to adjust the composition. Alternatively, a photoreaction can be utilized, the difference is set for the degree of hardening, and the difference is given to the solubility. Next, as shown in FIG. 4, a conductive material of -25-200827949 is vapor-deposited on top of the glass substrate 101 〇 to form mutually separated pixel electrodes 1 6 1 2 and a conductor film 1611 on the photoresist (stage S 1 005 ). Next, a method of forming the pixel electrode 1612 and the conductor film 1611 on the photoresist will be described with reference to the drawings. Fig. 9 is a schematic view showing the formation of a conductor film in the method for manufacturing a TFT substrate according to the first embodiment of the present invention, wherein (a) shows an enlarged cross section, and (b) shows a detailed view of an E portion. φ In Fig. 9, a transparent conductive material is deposited on the glass substrate 1010 to form a conductor film 1〇61 (the pixel electrode 1612 separated from each other and the conductor film 1611 on the photoresist) (stage S 1 005 ) . Namely, a transparent conductive material is deposited on the glass substrate 1010, and a conductor film 1611 on the photoresist is formed on the photoresist 1555. Further, a pixel electrode 1612 is formed on the exposed drain electrode 1042 and the protective insulating film 1 054. The pixel electrode 1612 is separated from the photoresist film 1611 on the photoresist by an undercut portion 1554, and is not electrically connected. The pixel 1612 is electrically connected to a drain electrode 1 〇 42 via a contact hole 1541. As the above-mentioned conductive material, a group containing indium oxide, zinc oxide (IZ0), indium oxide, tin oxide, zinc oxide (ITZO), zinc oxide, tin oxide (ZTO), and the like is generally used. As described above, when the film-forming composition is heated in the recovery step, the carbon-based compound can easily dissolve the conductor film. By this, productivity can be improved. Further, as the conductive material, the above is preferable, but it is not limited thereto. For example, in the stripping step, the film-forming composition is hardly dissolved, -26-200827949 but soluble in the recovery step. Strip the film composition. Further, it is selected from the group consisting of indium oxide, tin oxide-tin (ITO), amorphous indium oxide, tin oxide (a-ITO), titanium oxide, antimony oxide, tin oxide, zinc oxide, tin oxide, antimony oxide, and fluorine-doped tin oxide. These conductor films grouped in these combinations are not dissolved at all in the film-forming composition of the present invention. Next, as shown in FIG. 10, the film-forming composition is supplied to the glass substrate 10 0 0, and the conductor film 16 1 1 on the photoresist is peeled off from the glass substrate 1 0 1 0 (step • segment S 1 006 ) . Continuing, the used stripping film composition dissolves the conductor film 1611 on the photoresist and reuses it (stage S 1 007 ). Next, a method of peeling the conductive film 1611 on the photoresist from the glass substrate 1010, and a method of dissolving the conductive film 1611 on the photoresist after using the used film-forming composition, and then using the used film-forming composition , refer to the picture description. FIG. 10 is a view showing a step of stripping a conductor film on a stripping photoresist and a step of recovering a stripping composition used for reusing the TFT in the method for manufacturing a TFT substrate according to the first embodiment of the present invention. A cross-sectional view of the outline. In Fig. 10, the laminated glass substrate 1010 of the conductive body 1061 is dissolved and formed into a photoresist 1 5 5 3 by a stripping device 10 0 as a stripping step, and the conductive film on the photoresist can be stripped. 1611 (stage S 1 006 ). The stripping device 1 007 is a spray nozzle 10 72 and a pump 1073 which are sprayed on the glass substrate 1010 by a storage tank 1071a, 1071b in which the stripping liquid 1770 containing the stripping composition is stored, and sprayed on the glass substrate 1010. The suction duct 1 074 is recovered, and the recovery tank 1075 of the sprayed stripping liquid 1 070 and the recovery duct 1 076 are recovered. Further, the recovery duct 1 076 has one end connected to -27-200827949 in the recovery tank 1075, two branch pipes provided with solenoid valves 1761, 1762, and the other end - connected to the storage tanks 101a, 1071b. Therefore, for example, when the solenoid valve 1761 is closed and the solenoid valve 1 762 is opened, the stripping liquid 1〇7 of the recovery tank 1〇75 flows into the storage tank. Further, the suction duct 74 is connected to the pump 73 at one end, and is connected to the storage tanks 101a, 1071b via the two branch pipes each of which is provided with the electromagnetic valves 1 7 1 1, 1 7 1 2 . Therefore, for example, when the solenoid valve 17 1 1 is closed and the solenoid valve 1 7 1 1 is opened, the stripping liquid 1 070 of the storage tank _ 107 1a is sucked by the pump 1073. In the stripping apparatus 1 007, any of the stripping compositions of the above embodiments can be used as the stripping composition. Thereby, when the photoresist is formed to dissolve the photoreceptor 1 5 5 3 , the pixel electrode 1612 is hardly dissolved, so that the pixel electrode 1 6 1 2 is not damaged. Thereby, the manufacturing yield and reliability can be improved. Also, it will not release stench and improve the working environment. Next, the operation of the stripping apparatus 1 007 having the above configuration will be described. 首先 First, the stripping apparatus 1 007 is a storage liquid 1 070 which is stored at a low temperature (generally about 50 ° C) in the storage tank 101a. Further, the solenoid valve 1711 is opened, and the solenoid valve 1761 is closed. The solenoid valve 1762 is open. The solenoid valve 1712 is closed. Here, the peeling liquid 10070 stored in the storage tank 1071a is such that the conductor film 1611 on the photoresist is completely dissolved in the film-forming composition. Next, when the pump 1073 is activated, the stripping liquid 1 070 of the storage tank 1071a is sucked into the pump 1 073 via the solenoid valve 1711 and the suction duct 1 074, and is blown from the spray nozzle 1072 to the glass substrate 1010. In the stripping step of the present embodiment, the stripping liquid 1 070 is sprayed by a spray nozzle -28-200827949 1 072 in a spray form. Thereby, the peeling liquid 1 070 flows into the undercut portion 1 554 through the minute gap. Thereby, the conductor film 1161 on the photoresist can be effectively peeled off from the glass substrate 110 (stage S 1 006 ). Here, the peeling liquid 1 070 blown onto the glass substrate 1010 is such that the carbon-based compound of the film-forming composition is a weak acid, and the pixel electrode 1612 which is necessary for dissolution is prevented from being unsuitable at a low temperature. Further, Fig. 10 shows a state in which the film is peeled off, and the conductor film 1611 on which the photoresist 1 5 53 and the light Φ is formed is partially left. Thus, the stripping composition is dissolved to form a photoresist 1 5 5 3 , and the conductor film 1611 on the photoresist formed on the upper surface of the photoresist 1 5 5 3 can be separated by the glass substrate 1010. Further, the film-forming composition is insoluble in the conductor film 1061. Therefore, the most suitable film stripping conditions (spray pressure or spray time, etc.) can be selected. When the film-forming composition of the present embodiment is generally used, the spray ejection time is about 0.5 to 5 minutes, preferably about 1 to 3 minutes. Further, the formation of the photoresist 1 5 5 3 is dissolved, and the temperature of the film-forming composition is preferably in a temperature range of about 30 ° C or more and less than 60 ° C, and about 40 ° C or more and 50 ° C or less. good. The reason why the temperature of the stripping film composition in the stripping step is set to be about 30 ° C or more and less than 60 ° C is that the time for dissolving and forming the photoresist 1 5 5 3 is lower than the temperature of about 30 ° C. It will be too long and will reduce production efficiency. Further, at a high temperature of about 60 ° C or higher, the dissolution rate of the carbon-based compound rises, and the pixel electrode is dissolved at 16 1 2, which may cause a decrease in manufacturing yield. Next, the stripping liquid 1070 which is blown onto the glass substrate 1 〇 1 为 is formed by dissolving the glass substrate 1 0 10 0 and forming a photoresist 1 5 5 3 , containing the -29-200827949 conductor film 1611 on the stripped photoresist. In the state, the recovery tank 1075, the recovery conduit 1 076, and the solenoid valve 1 762 pass through the storage tank 171b. At this time, the conductor film 1611 on the peeled photoresist is mixed in the peeling liquid 1 070 as fine particles such as particles or filaments. Therefore, the stripping liquid 1 070 (sometimes referred to as a used stripping film composition) containing the electroconductive film 1 61 1 on the photoresist is contained. When flowing into the storage tank 1071b, in the storage tank 101a, the conductor film on the photoresist is precipitated, and the carbon-based compound causes the conductor film 1161 on the photoresist to start to dissolve. Here, it is preferable to provide a temperature control means and an agitation means (not shown) in the storage tank 107 1b, and it is preferable to increase the temperature of the peeling liquid 1 070. That is, the dissolution of the conductor film 1161 on the photoresist is preferably carried out at a temperature of about 60 ° C or more and less than 100 ° C, more preferably about 70 ° C or more. Below °c. When the film-forming composition of the above embodiment is used in general, the time for dissolving the conductor film 1611 on the photoresist is about 10 to 30 minutes. In the recovery step, the reason why the temperature of the film-forming composition is about 60 ° C or more and less than 100 ° C is that the carbon-based compound is weakly acidic when it is lower than about 60 ° C, and the conductivity on the photoresist cannot be dissolved. Body membrane 1611. Further, at a high temperature of about 100 ° C or higher, the components in the film-forming composition evaporate, causing the composition to change. Thus, in the recovery step, when the film-forming composition is heated, the dissolution rate is accelerated. Therefore, the conductor film 1611 on the photoresist can be dissolved in a shorter time. In particular, when the temperature of the film-forming composition is at least about 70 ° C, the activity of the acid in the carbon-based compound is increased, and the effect is almost the same as that of the strong acid. Thereby, the conductor film 1611 on the photoresist is easily dissolved. Next, after the pump 1 073 is stopped, the solenoid valve 1 762 is closed, and after the predetermined time -30-200827949, the discharge tank 1071b completely dissolves the stripping liquid 1070 1071b of the conductor film 1611 on the photoresist. In the reclaimed stripping liquid 1 070, the solenoid valve and the solenoid valve 1761 are opened, and the solenoid valve 1 762 is closed. After the opening, the pump 1 073 is blown from the nozzle 1072 through the nozzle 1072 to the glass substrate 1010. That is, it is reused after the conductor film 1 6 1 1 on the dissolution photoresist is used (stage FIG. 11 shows a schematic diagram of a method for producing the first embodiment of the present invention, and (a) shows a drawing. Fig. (b) shows an enlarged cross-sectional view of the FF. In Fig. 11, the TFT substrate 1001 is formed by stripping the photoresist 1 5 5 3 and the conductor film 1611 on the photoresist to expose 1 and the protective insulating film 1 054. Further, in the TFT substrate 1001 of the present embodiment, the first photomask, the second mesh mask, and the third mesh mask are used, and the manufacturing steps of the TFT substrate 1001 of the present embodiment are excellent in productivity. In the TFT substrate 1001 of the present embodiment, the number of masks can be reduced. Thereby, the number of masks can be reduced, and the number of masks can be reduced, and the conductor film 1061 can be hardly dissolved when the photoresist is dissolved by the inclusion of a thiol acid compound and the photoresist is dissolved. The pixel electrode 1612 does not cause damage, improves the system property, and does not release malodor, and can improve the recovered film film of the used film-forming composition used in the working environment, and the storage film can be stored. The storage tank 1071 is closed, and the solenoid valve 1762 is inhaled. Fog stripping composition S 1 007) _ billion won in the TFT substrate plane electrodes forming step and then removing the pixel electrode 1612 S production method using three Guangzhao. The borrowing method can reduce the manufacturing method and productivity of manufacturing. Also, the situation of things is comparable. In this way, the production rate and trust. Moreover, the stripping step is carried out reliably and efficiently -31 - 200827949 to further improve quality and productivity. Next, an embodiment and a comparative example of the method of manufacturing the above TFT substrate will be described. [Embodiment] [Example 1] First, as the film-forming composition in the first embodiment, the peeling liquids a, b, c, d, and e shown in Table 1 were prepared. [Table 1] Example 1 Stripping liquid composition Amine compound Aprotic polar solvent Carboxylation 1 Compound % wt% Compound wt% Compound wt% Stripping solution a Monoethanolamine 30 N-methylpyrrolidone 66 Acetic acid 4 Stripping liquid b Single different Propylamine 30 N,N-dimethylacetamide 66 acetic acid 4 stripping solution c methylmethanolamine 30 N,N-dimethylformamide 66 acetic acid 4 stripping solution 乙基ethylethanolamine 66 N,N-two Methylimidazole 30 Acetic acid · 4 Stripping solution e Dimethylamine amine 66 Dimethylhydrazine 30 Acrylic acid 4 As a glass substrate, a square glass substrate of about 100 mm x 100 mm x 0.7 mm is prepared, washed with pure water, and then blocked. Coating formation was carried out using spin coating. The photoresist is a negative-type photoresist made in Japan: • ΖΤΝ2464-27. After continuing to heat at about 80 ° C for about 15 minutes, the exposure was carried out at an exposure intensity of 30 〇 m J/cm 2 . As the photomask to be used, a strip mask provided in the order of a stripe of about 20 μm and a space of about 90 μm is used. Next, development was carried out under an aqueous solution of about 2.8 wt% of tetramethylammonium hydroxide to obtain a stripe pattern of the above-mentioned stripe/space. After the development, the mixture was washed with pure water -32-200827949, and the washing water was removed by blowing, and then about 15 minutes of arrow heating was performed at about 130 °C. Next, on the above glass substrate, a film having a thickness of about 100 nm was formed by a cathode sputtering method using IZO (ln203: ZnO = about 90: 10 wt%). After the stripping liquids a, b, c, d, and e were heated to about 40 ° C, the glass substrate obtained above was immersed in the stripping solution for 2 minutes, and then subjected to photoresist stripping, and washed with pure water. After blowing, it is dried in a desiccator. Thus, a film made of IZO (about 90 μm wide) and a glass substrate having a space of about 20 μm were obtained. When the contents of the used peeling liquids a, b, c, d, and e were observed by an optical microscope, it was confirmed that there was a coiled tantalum film having a peeled width of about 20 μm (refer to Fig. 12 for reference). When the above-mentioned used peeling liquids a, b, c, d, and e were stirred at about 70° for about 10 minutes, the coil-shaped IZO film was dissolved and Φ, and no coil-shaped IZO film was observed. The peeling liquids a, b, c, d, and e were again subjected to photoresist peeling, and it was confirmed that the resist peeling was possible. Further, no wire-like IZO or powdery IZO was observed on the peeled substrate. [Example 2] First, as the film-forming composition of the second embodiment, the peeling liquids f and g shown in Table 2 were prepared. -33-

200827949 m 2] 實施例2 剝離液組成 羧酸化合ί f勿 碳酸乙烯酯 wt % 化合物 wt % 剝離液e 碳酸乙燒酯 97 乙酸 3 剝離液f 碳酸乙烯酯 98 乙酸 2 其次，將剝離液f，g加溫至約40 °C後，將與上 施例1相同的玻璃基板浸漬於上述剝離液中2分鐘， 光阻剝離，以純水洗淨並吹氣後，以乾燥器進行乾燥 此，得到由IZO之薄膜（幅約90μιη)、及形成約 之空間的玻璃基板。 使用過的剝離液f，g之内容物以光學顯微鏡進 察時，確認存在經剝離之寬約20 μπι的線圈狀之IZO (圖12做參考）。 將上述使用過的剝離液f，g於約70 °C下進行約 鐘攪拌時，上述線僵狀之IZO薄膜經溶解，並無觀察 圈狀之IZO薄膜。該剝離液f，g再次進行光阻剝難 認可進行光阻剝離。又，經剝離之基板上並無觀察致 狀IZO、或粉末狀IZO。 [實施例3] 首先，作爲·上述第三實施形態之剝膜組成物， 表3所不剝離液h，i，j。 述實 進行 。藉 20 μπι 行觀 薄膜 10分 到線 ，確 線圈 備如 -34- 200827949 [表3] 剝 離 液 組 成 實 施 例 3 羧酸化合物 院氧 基丙 烯 醯 胺 Wt% 化合物 wt % 剝 離 液 g N，N- 一 甲基 •η- 丁 氧 基 丙 烯 醯 胺 97 乙酸 3 剝 離 液 h N，N- 二 乙基 -η-丁 氧 基 丙 烯 醯 胺 98 乙酸 2 剝 離 液 i N，N- 二 甲基 -η-丙 氧 基 丙 烯 醯 胺 70 乙酸 3 水 27 其次，將剝離液h，i，j加溫至約40°C後，將與上述 實施例1相同之玻璃基板，於上述剝離液中浸漬2分鐘， 進行光阻剝離，以純水洗淨並吹氣後，以乾燥器乾燥。藉 此得到由IZO所成之薄膜（寬約90μπι)、及形成約20μιη 之空間的玻璃基板。 將使用過的剝離液h，i，j之内容物以光學顯微鏡觀 察時，確認存在經剝離之寬約20μηι的線圏狀之IZO薄膜 (圖12做參考）。 將上述使用過的剝離液h，i，j於約70°C下進行約1〇 分鐘攪拌，上述線圈狀之IZO薄膜經溶解，並無觀察到線 圈狀之IZO薄膜。該剝離液再度進行光阻剝離，確認出可 進行光阻剝離。又，於經剝離之基板上並無觀察到線圈狀 IZO、或粉末狀IZO。 又，取代上述 ΙΖΌ ( ln203 : ZnO=約 90 : 10wt%)使 用 ITZO(In2〇3: Sn〇2: ZnO =約 60: 20: 2 0wt%)或 ZTO ( ZnO : Sn02=約 60 : 40wt% )亦可同樣地無問題下 進行剝離。又，將使用過的剝離液a〜j於約70 °C下進行 -35- 200827949 約10分鐘攪拌時，上述線圏狀之ITZO薄膜或ζτο薄膜 經溶解，並無觀察到線圈狀之ΙΤΖΟ薄膜或ΖΤΟ薄膜α該 剝離液、再度進行光阻剝離，確認可進行光阻剝離。又， 經剝離之基板上，並無觀察到線圈狀之ΙΤΖΟ或ζτο、及 粉末狀之ΙΤΖΟ或ΖΤΟ。 又’作爲ΙΖΟ之組成以Ιιΐ2〇3約爲60〜95wt%、ΖηΟ 約爲5〜40wt%爲佳。較佳爲Ιη2〇3約爲70〜95wt%、ΖηΟ _ 約爲5〜30wt%。 且作爲ITZO之組成，以Ιη203約爲20〜90wt%、 Sn02約爲 5〜40wt%、ΖηΟ約爲 5〜40wt%爲佳。較佳爲 Ιη203 約爲 40〜80wt%、Sn02 約爲 10〜30wt%、ΖηΟ 約爲 10 〜30wt% 〇 又，ZTO之組成爲，ΖηΟ約爲50〜9(^1%、8!1〇2約爲 10〜50wt%爲佳。較佳爲ΖηΟ約爲55〜80wt%、Sn02約爲 2 0 〜4 5 wt % 〇 • 「比較例1」 ， 取代各實施例所使用之IZO標的，使用ITO ( Ιη203 :200827949 m 2] Example 2 Stripping liquid composition Carbide compounding f f-vinyl carbonate wt % Compound wt % Stripping solution e Ethyl carbonate ethidium acetate 97 Acetic acid 3 Stripping solution f Vinyl carbonate 98 Acetic acid 2 Next, the stripping solution f, g was heated to about 40 ° C, and the same glass substrate as in the above Example 1 was immersed in the above-mentioned peeling liquid for 2 minutes, and the photoresist was peeled off, washed with pure water and blown, and then dried in a dryer. A film made of IZO (approximately 90 μm) and a glass substrate forming a space were obtained. When the contents of the used peeling liquids f and g were observed by an optical microscope, it was confirmed that there was a coil-like IZO having a peeling width of about 20 μm (see Fig. 12 for reference). When the used peeling liquid f, g was stirred at about 70 ° C for about a while, the above-mentioned line-shaped IZO film was dissolved, and no ring-shaped IZO film was observed. The stripping liquid f, g is again subjected to photoresist stripping and is approved for photoresist stripping. Further, no visible IZO or powdery IZO was observed on the peeled substrate. [Example 3] First, as the film-forming composition of the above-described third embodiment, the liquids h, i, and j were not peeled off in Table 3. Carry out the work. The film was dispensed by 20 μπι 10 minutes to the line, and the coil was prepared as -34-200827949 [Table 3] Stripping liquid composition Example 3 Carboxylic acid compound oxypropylene decylamine Wt% Compound wt % Stripping solution g N,N- Monomethyl η-butoxy acrylamide 97 acetic acid 3 stripping solution h N,N-diethyl-η-butoxy acrylamide 98 acetic acid 2 stripping solution i N,N-dimethyl-η- Propoxy acrylamide 70 acetic acid 3 water 27 Next, after the stripping liquid h, i, j was heated to about 40 ° C, the same glass substrate as in the above Example 1 was immersed in the stripping solution for 2 minutes. The photoresist was peeled off, washed with pure water and blown, and then dried in a dryer. Thus, a film made of IZO (about 90 μm wide) and a glass substrate having a space of about 20 μm were obtained. When the contents of the used peeling liquids h, i, j were observed by an optical microscope, it was confirmed that there was a wire-like IZO film having a peeling width of about 20 μm (see Fig. 12 for reference). The above-mentioned used peeling liquids h, i, j were stirred at about 70 ° C for about 1 minute, and the coil-shaped IZO film was dissolved, and no coil-shaped IZO film was observed. This peeling liquid was again subjected to photoresist peeling, and it was confirmed that the resist peeling was possible. Further, no coil-like IZO or powdery IZO was observed on the peeled substrate. Further, in place of the above ΙΖΌ (ln203: ZnO = about 90: 10% by weight), ITZO (In2〇3: Sn〇2: ZnO = about 60: 20: 20% by weight) or ZTO (ZnO: Sn02 = about 60: 40% by weight) is used. ) It is also possible to carry out the peeling without any problem. Further, when the used peeling liquids a to j were stirred at about 70 ° C for -10 to 200827949 for about 10 minutes, the above-mentioned wire-shaped ITZO film or ζτο film was dissolved, and no coil-like ruthenium film was observed. Alternatively, the peeling liquid of the film α was peeled off again, and it was confirmed that the resist peeling was possible. Further, on the peeled substrate, no coil-like flaws or ζτο, and powdery flaws or flaws were observed. Further, as the composition of the crucible, Ιιΐ2〇3 is preferably about 60 to 95% by weight, and ΖηΟ is preferably about 5 to 40% by weight. Preferably, Ιη 2〇3 is about 70 to 95% by weight, and ΖηΟ _ is about 5 to 30% by weight. Further, as the composition of ITZO, Ιη203 is about 20 to 90% by weight, Sn02 is about 5 to 40% by weight, and ΖηΟ is preferably about 5 to 40% by weight. Preferably, Ιη203 is about 40 to 80% by weight, Sn02 is about 10 to 30% by weight, and ΖηΟ is about 10 to 30% by weight. Further, the composition of ZTO is ΖηΟ is about 50 to 9 (^1%, 8!1〇2) Preferably, it is about 10 to 50% by weight, preferably ΖηΟ is about 55 to 80% by weight, and Sn02 is about 20 to 45% by weight. 比较• "Comparative Example 1", in place of the IZO standard used in each of the examples, ITO is used. ( Ιη203 :

Sn02二約90: 10wt%)標的以外，進行與上述各實施例之 同樣操作。 將所得之使用過的剝離液a〜j之内容物以光學顯微 鏡觀察時，確認存在經剝離之20 μιη的線圏狀ITO薄膜。 將該使用過的剝離液於約7(TC下進行約30分鐘攪拌’上 述線圈狀之ITO薄膜未溶解，觀察到線圈狀之ΙΤΌ薄膜及 -36- 200827949 經微粉化之ITO。該剝離液再度進行光阻剝離，確認可進 行光阻剝離，但觀察到經剝離之基板上，附著微粉末狀 ITO。 這些附著物經過後步驟之配向膜塗佈或配向處理、液 晶注入、封止步驟，而製成液晶面板。然而，附著物於該 後步驟中擴散於配向膜中，或擴散於液晶中，成爲顯示缺 陷或顯示不良之原因。 效第 有述 爲上 3亦與 態法法 形方方 施收收 實回回 一 之的 第物物 的成成 中 組 組 法膜膜 方剝剝 收爲之 M作中 之明態 物發形 成本施 組，實 膜又本 剝 施形態的TFT基板之製造方法幾乎爲相同方法。 即，基板1010上形成薄膜晶體管1 050 (階段S1001 )。繼續於玻璃基板1010及薄膜晶體管1 050上，層合保 護用絶緣膜1 054 (階段S 1 002 )。其次，於保護用絶緣膜 1 054上層合光阻1 055 (階段S 1 003 )。繼續使用網目曝 光技術（第三網目光罩（無圖示）），將層合的光阻1055 形成爲所定形狀並進行飩刻，且再形成光阻1 055，於經再 形成之光阻（再形成光阻1 5 53 )的周邊下部形成咬邊（ undercut)部1554 (階段S1004)。其次，於玻璃基板 1 〇 I 〇之上方，蒸鍍透明導電性物質，形成互相分離之畫素 電極1612及光阻上之導電體膜1611 (階段S 1 005 )。且 ，於玻璃基板1010供給剝膜組成物，將光阻上之導電體 膜1 6 1 1由玻璃基板1 0 1 〇剝離（階段S 1 006 )後，繼續於 -37- 200827949 使用過的剝膜組成物溶解光阻上之導電體膜1 6 1 1並再利 用（階段S 1007 )。 〔TFT基板之製造方法中的第二實施形態〕 圖1 3表示欲說明本發明的第二實施形態中的TFT基 板之製造方法的槪略流程圖。 圖13中，首先於基板2010上形成薄膜晶體管2050( 階段 S 2 0 0 1 )。 其次，參考圖面説明薄膜晶體管2050之形成方法。 圖14表示欲說明本發明的第二實施形態中之TFT基 板的製造方法之槪略圖，（a)表示形成閘配線及閘電極 ，層合閘絶緣膜之平面圖，（b)表示A’-A’擴大截面圖。 圖14中，首先準備玻璃基板2010，藉由微影技術法 ，形成由A1 (鋁）等導電體薄膜所成之閘配線2021及閘 電極2022，繼續於露出的玻璃基板2010、閘配線202 1及 閘電極2022上層合閘絶緣膜2023。 且，雖無圖示，於形成閘配線202 1及罱電極2022上 使用第一光罩。 圖1 5表示欲說明本發明的第二實施形態中之TFT基 板的製造方法之槪略圖，（a )表示形成薄膜晶體管，層 合保護用絶緣膜之平面圖，（b )表示B’-B’擴大截面圖。 圖15中，首先藉由於閘絶緣膜2023上，形成電源（ source)配線 2031、電源（source)電極 2032、通道部 205 1 '及汲極（drain)電極2042，玻璃基板2010上形成 -38- 200827949 薄膜晶體管2050 (階段S200 1 )，其次於玻璃基板2010 及薄膜晶體管2050上層-合保護用絶緣膜2054 (階段 S2002 ) 〇 本實施形態中，形成電源（source)配線203 1、電源 (source )電極2032、通道部2051、及汲極（drain )電 極2042時，使用網目曝光技術（第二網目光罩（無圖示 ))。即，首先於閘絶緣膜2023上，以非晶體矽薄膜 φ 2052、η型非晶體矽薄膜2053、鉬/鋁/鉬薄膜等導電體薄 膜203 3、及光阻（無圖示）之順序層合。其此，雖未圖示 ，但使用網目曝光技術形成光阻，並藉由第一蝕刻形成電 源（source)配線2031之同時，形成電源（source)電極 2032、通道部205 1及汲極（drain)電極2042所成的部份 。繼續再形成光阻，藉由第二選擇性蝕刻，將通道部2051 上方之導電體薄膜2033及η型非晶體矽薄膜20 53進行蝕 刻，形成通道部2051、電源（source)電極2032及汲極 _ ( d r a i η )電極2 0 4 2。其次，於電源（s o u r c e )配線2 0 3 1 、薄膜晶體管2050及閘絶歎膜2023上層合保護用絶緣膜 2054 (階段 S2002 ) 〇 其次，如圖13所示，於保護用絶緣膜2054上層合光 阻2 055 (階段S2003 )，繼續使用網目曝光技術（第三網 目光罩（無圖示））將層合的光阻205 5成所定之形狀後 進行蝕刻，且再形成光阻205 5，於經再形成之光阻（再形 成光阻255 3 )的周邊下部形成咬邊（undercut )部25 54 ( 階段 S2004 )。 -39 - 200827949 其次，參考圖面説明光阻205 5及咬邊（undercut)部 2554之形成方法。 圖16表示欲說明本發明的第二實施形態中之TFT基 板的製造方法之槪略圖，（a)表示保護用絶緣膜上的光 阻形成所定形狀之平面圖，（b)表示C’-C’擴大截面圖。 圖16中，首先於保護用絶緣膜2054上層合光阻205 5 (階段S2003 )。繼續，藉由網目曝光技術，將光阻205 5 形成所定形狀。即，光阻2055爲，於汲極（drain)電極 2042上方形成欲形成接觸孔（contact hole ) 254 1之開 口部2056，且於形成畫素電極2612之部份（圖23做參考 )形成厚度較薄之網目曝光光阻2552，於未形成畫素電極 2612之部份，形成厚度較厚之全曝光光阻2551。 圖1 7表示欲說明本發明的第二實施形態中之TFT基 板的製造方法之槪略圖’ （a)表TfC形成接觸孔（contact hole )之擴大截面圖，（b)表示再形成光阻，並形成咬 邊（undercut)部之擴大截面圖，（c)表示D’部詳細圖 〇 圖1 7 ( a )中，首先使用藉由網目曝光技術所形成之 光阻205 5，對於保護用絶緣膜2054進行飩刻（一般爲乾 鈾刻），形成欲銜接畫素電極2612與汲極（drain)電極 2 0 4 2 之接觸孔（c ο n t a c t h ο 1 e ) 2 5 4 1。 其次，如圖17 ( b )所示，進行對於光阻205 5之再形 成。即，將光阻2 0 5 5藉由氧電黎硏磨加工徐徐除去，將 網目曝光光阻2552全部除去。此時，全曝光光阻25 5 1由 -40- 200827949 上方徐徐除去，成爲厚度變薄之再形成光阻25 53，作爲光 阻-具有可發揮功能之厚度。又，再形成光阻25 5 3之上面 維持所定形狀。繼續於顯像液藉由再顯像，於上述所定形 狀之周邊下部形成咬邊（undercut)部2554 (階段S2004 )° 其中，較佳爲如圖17 ( c)所示，將再形成光阻2553 成爲由上層光阻25 5 1 a與下層光阻25 5 1 b所成之二層結構 φ 爲佳。上層光阻25 5 1 a與下層光阻25 5 1 b各對於顯像液之 溶解性爲相異，設定爲下層光阻255 1 b爲比上層光阻 255 1 a對於顯像液之溶解性更高。藉此，可更確實形成咬 邊（undercut)部2554，並提高產率。 又，欲賦予上層光阻255 1 a與下層光阻255 1b之溶解 性差，例如可摻合2種類以上之光阻樹脂而調整成分、或 利用光反應 > 使其具有硬化度差値而可賦予溶解性差。 其次，如圖13所示，於玻璃基板2010上方，蒸鍍透 # 明之導電性物質，形成互相分離之畫素電極2612及光阻 上之導電體膜2611(階段S2005 )。 其次，參考圖面説明畫素電極2612及光阻上之導電 體膜2611的形成方法。 圖18表示欲說明本發明的第二實施形態中之TFT基 板的製造方法之形成導電體膜的槪略圖，（a_ )表示擴大 截面圖，（b)表示E5部詳細圖。 圖18中，於玻璃基板20 10之上方蒸鍍透明之導電性 物質，形成導電體膜2061 (互相分離之畫素電極2612及 -41 - 200827949 光阻上之導電體膜2611)(階段S2005 )。即，於玻璃基 板20 1 0上方蒸鍍透明之導電性物質後，於再形成光阻 2553上形成光阻上之導電體膜2611。又，於露出之汲極 (drain)電極2042及保護用絶緣膜2054上，形成畫素電 極2612。畫素電極2612爲藉由咬邊（undercut)部25 54 ，由光阻上之導電體膜26 1 1離開，未以電性連接。該畫 素電極2612爲介著接觸孔（contact hole) 2541以電性 連接汲極（drain)電極2042。 作爲上述導電性物質，一般可使用含有氧化銦•氧化 鋅（IZO )、氧化銦·氧化錫（ITO )、非晶體氧化銦•氧 化錫（a-ITO )、氧化鈦·氧化鈮、氧化錫·氧化鋅、氧 化錫·氧化銻、氟摻合氧化錫、及复些組合所成群者。這 些導電體膜因於剝膜組成物完全不溶解，故可溶解微量的 必要之畫素電極2612，而可排除降低製造產率之顧慮。且 ’導電體膜之比重爲剝膜組成物之比重的約5倍以上，故 可容易且精度高下進行沈澱式分離或離心式分離。 其次，如圖1 3所示，於玻璃基板201 0供給剝膜組成 物，將光阻上之導電體膜26 1 1由玻璃基板20 1 0剝離（階 段S2006 )，繼續由使用過的剝膜組成物分離光阻上之導 電體膜26 11後再利用（階段S2007 )。 其次，將光阻上之導電體膜2611由玻璃基板2010剝 離之方法、及將經剝離之光阻上的導電體膜2611由使用 '過的剝膜組成物分離後，再利用該使用過的剝膜組成物之 方法，參考圖面説明。 -42- 200827949 圖19表示欲說明本發明的第二實施形態中之TFT基 板的製造方法中，將光阻上之導電體膜進行剝離之剝膜步 驟、及再利用使用過的剝膜組成物之回收步驟的槪略截面 圖。 圖19中，層合導電體膜206 1之玻璃基板2010於剝 膜步驟中，藉由剝膜裝置2007溶解再形成光阻25 53，剝 膜光阻上之導電體膜2611 (階段 S2006 )。剝膜裝置 φ 2007爲，貯藏含有剝膜組成物之剝離液2070之貯藏槽 2 07 1、於玻璃基板2010將剝離液2070以噴霧狀進行噴射 之噴霧嘴2072、幫浦2073及吸入導管2074所成。 本實施形態之剝膜步驟中，剝離液2070爲由噴霧嘴 2 072以噴霧狀進行噴射，如此通過微小隙間後於咬邊（ undercut )部25 54進入剝離液2070，故可有效地將光阻 上之導電體膜2611由玻璃基板2010剝離。 且，圖1 9表示剝膜中狀態，其中殘留一部份的再形 • 成光阻2553及光阻上之導電體膜2611。 又，含於剝離液2070之剝膜組成物爲使用於剝膜再 形成光阻25 53之光阻用剝膜劑所成者。該光阻用剝膜劑 含有胺系化合物及非質子性極性化合物。 作爲胺系化合物之例子，可舉出單乙醇胺、單異丙醇 胺、甲基甲醇胺、乙基乙醇胺、二甲醇胺、胺乙氧基乙醇 胺、二乙醇胺等（圖20，21做參考）。又，上述各胺系 化合物可單獨使用或組合2個以上使用。 作爲非質子性極性化合物之例子，可舉出N-甲基-2- -43- 200827949 吡咯烷酮、N，N-二甲基乙醯胺、Ν，Ν·二甲基甲醯胺、n，N-二甲基咪唑、二甲基亞颯等（圖22做參考）。又，上述 非質子性極性化合物可單獨使用或組合2個以上使用。 又，光阻用剝膜劑爲含有胺系化合物約2 0〜8 0重量％ ，且含有約20〜80重量％之非質子性極性化合物爲佳。如 此僅溶解再形成光阻25 5 3，對於必要之畫素電極26 12不 會造成傷害，故可提高產率及信賴性。 光阻用剝膜劑中含有約2 0〜8 0重量％之胺系化合物的 理由爲，若胺系化合物之含量未達約2 0重量％時，無法於 短時間內溶解再形成光阻255 3，又胺系化合物的含量若超 過約8 0重量％時，溶解再形成光阻2 5 5 3之其間，形成的 畫素電極2612之導電體膜會急遽地被腐餘而誘發畫素電 極2612之損傷。又，胺系化合物若超過約80重量％時， 剝膜組成物之揮發量會增加，亦有者剝膜組成物之成分比 產生變化之顧慮。因此，本發明的剝膜組成物中，胺系化 合物之含量以約2〇〜80重量％爲佳，較佳爲30〜70重量 %。 又，光阻用剝膜劑中含有非質子性極性化合物約20〜 8 0重量％之理由爲，非質子性極性化合物之含量若未達約 20重量％時，再形成光阻25 53之剝膜時間會增加，或再 利用時的液體壽命會減短。又，非質子性極性化合物之含 量若超過約80重量％時，於剝膜再形成光阻2553時，可 能會導致畫素電極26 1 2之腐鈾。因此，本發明的剝膜組 成物中，非質子性極性化合物之含量以約2 0〜8 0重量％爲 -44- 200827949 佳’較佳爲約30〜70重量％。 例如作爲光 丙烯醯胺化 又，剝膜組成物並非限定於上述姐成者， 阻用剝膜劑，可含有下述一般式1所示烷氧基 合物、或碳酸乙烯酯。 [化4]The same operation as the above respective examples was carried out except that Sn02 was about 90:10 wt%). When the contents of the obtained peeling liquids a to j obtained were observed by an optical microscope, it was confirmed that there was a 20 μm-thick ITO film which was peeled off. The used stripping solution was stirred at about 7 (TC for about 30 minutes). The coiled ITO film was not dissolved, and a coiled ruthenium film and -36-200827949 micronized ITO were observed. The photoresist was peeled off, and it was confirmed that the photoresist peeling was possible. However, it was observed that the finely powdered ITO adhered to the peeled substrate. These adherends were subjected to the alignment film coating or alignment treatment, liquid crystal injection, and sealing step in the subsequent steps. A liquid crystal panel is formed. However, the deposit diffuses into the alignment film in the subsequent step, or diffuses into the liquid crystal, causing display defects or display defects. The effect is described as the upper 3 and the state method. The composition of the first object in the process of collecting and returning the film is formed into a film of the film, and the film is formed into a thin film. The manufacturing method is almost the same. That is, the thin film transistor 1 050 is formed on the substrate 1010 (stage S1001). The protective insulating film 1 054 (stage S 1 002 ) is laminated on the glass substrate 1010 and the thin film transistor 1 050. A photoresist 1 055 (stage S 1 003 ) is laminated on the protective insulating film 1 054. The laminated photoresist 1055 is formed into a predetermined shape by using a mesh exposure technique (third mesh mask (not shown)). And etching is performed, and a photoresist 1 055 is formed again, and an undercut portion 1554 is formed at a lower portion of the periphery of the re-formed photoresist (reformed photoresist 1 5 53 ) (stage S1004). Second, on the glass substrate Above the 〇I ,, a transparent conductive material is vapor-deposited to form a separate pixel electrode 1612 and a conductor film 1611 on the photoresist (stage S 1 005 ). Further, a film-forming composition is supplied to the glass substrate 1010. After the conductive film 161 1 1 on the photoresist is peeled off from the glass substrate 10 1 ( (stage S 1 006 ), the stripping film composition used in -37-200827949 is dissolved to dissolve the conductive film 1 on the photoresist. 6 1 1 and reuse (stage S 1007). [Second Embodiment of Manufacturing Method of TFT Substrate] FIG. 13 is a schematic flow chart for explaining a method of manufacturing a TFT substrate according to a second embodiment of the present invention. In FIG. 13, a thin film transistor 2050 is first formed on a substrate 2010 (step Next, a method of forming the thin film transistor 2050 will be described with reference to the drawings. Fig. 14 is a schematic view showing a method of manufacturing the TFT substrate in the second embodiment of the present invention, and (a) shows the formation of the gate wiring. And the gate electrode, the plan view of the laminated gate insulating film, and (b) shows the enlarged cross-sectional view of A'-A'. In Fig. 14, the glass substrate 2010 is first prepared, and the conductive film A1 (aluminum) or the like is formed by the lithography technique. The gate wiring 2021 and the gate electrode 2022 formed by the bulk film continue to laminate the gate insulating film 2023 on the exposed glass substrate 2010, the gate wiring 202 1 and the gate electrode 2022. Further, although not shown, the first photomask is used to form the gate wiring 202 1 and the germanium electrode 2022. Fig. 15 is a schematic view showing a method of manufacturing a TFT substrate according to a second embodiment of the present invention, wherein (a) shows a plan view of a thin film transistor, a laminate protective insulating film, and (b) shows B'-B'. Expand the section view. In Fig. 15, first, a power supply wiring 2031, a power source electrode 2032, a channel portion 205 1 ', and a drain electrode 2042 are formed on the gate insulating film 2023, and a -38- is formed on the glass substrate 2010. 200827949 Thin film transistor 2050 (stage S200 1 ), secondly to glass substrate 2010 and thin film transistor 2050 upper layer and protective insulating film 2054 (stage S2002). In this embodiment, a power supply line 203 1 and a power source are formed. In the case of the electrode 2032, the channel portion 2051, and the drain electrode 2042, a mesh exposure technique (second mesh mask (not shown)) is used. That is, first, on the gate insulating film 2023, an amorphous thin film φ 2052, an n-type amorphous germanium thin film 2053, a conductive thin film 203 3 such as a molybdenum/aluminum/molybdenum thin film, and a photoresist (not shown) are sequentially laminated. Hehe. Although not shown, a photoresist is formed using a mesh exposure technique, and a source wiring 2031 is formed by a first etching, and a source electrode 2032, a channel portion 205 1 and a drain are formed. The portion of the electrode 2042. The photoresist is further formed, and the conductor film 2033 and the n-type amorphous germanium film 20 53 above the channel portion 2051 are etched by the second selective etching to form the channel portion 2051, the source electrode 2032, and the drain electrode. _ (drai η) electrode 2 0 4 2 . Next, a protective insulating film 2054 is laminated on the power source wiring 2 0 3 1 , the thin film transistor 2050, and the gate insulating film 2023 (stage S2002). Next, as shown in FIG. 13, the protective insulating film 2054 is laminated. Photoresist 2 055 (stage S2003), continue to use the mesh exposure technology (third mesh mask (not shown)) to form the laminated photoresist 205 into a predetermined shape, and then etch, and then form a photoresist 205 5, An undercut portion 25 54 is formed at a lower portion of the periphery of the reformed photoresist (reformed photoresist 255 3 ) (stage S2004). -39 - 200827949 Next, a method of forming the photoresist 205 5 and the undercut portion 2554 will be described with reference to the drawings. Fig. 16 is a schematic view showing a method of manufacturing a TFT substrate in a second embodiment of the present invention, wherein (a) is a plan view showing a shape of a photoresist on a protective insulating film, and (b) is a C'-C'. Expand the section view. In Fig. 16, first, a photoresist 205 5 is laminated on the protective insulating film 2054 (stage S2003). Continuing, the photoresist 205 5 is formed into a predetermined shape by a mesh exposure technique. That is, the photoresist 2055 is formed with an opening portion 2056 through which a contact hole 254 1 is formed over the drain electrode 2042, and a thickness is formed in a portion where the pixel electrode 2612 is formed (refer to FIG. 23 for reference). The thin mesh exposure photoresist 2552 forms a full thickness photoresist 2551 having a thick thickness at a portion where the pixel electrode 2612 is not formed. Fig. 17 is a schematic cross-sectional view showing a method of manufacturing a TFT substrate in a second embodiment of the present invention. (a) an enlarged cross-sectional view of a contact hole formed by TfC, and (b) shows a re-formation of a photoresist. And forming an enlarged cross-sectional view of the undercut portion, (c) showing a detailed view of the D' portion. In Fig. 17 (a), the photoresist 205 5 formed by the mesh exposure technique is first used, and the protective insulation is used. The film 2054 is etched (generally dry uranium engraving) to form a contact hole (c ο ntacth ο 1 e ) 2 5 4 1 to be coupled to the pixel electrode 2612 and the drain electrode 2 0 4 2 . Next, as shown in Fig. 17 (b), re-formation of the photoresist 205 5 is performed. That is, the photoresist 2 0 5 5 was gradually removed by the oxygen electric pulverization processing, and the mesh exposure photoresist 2552 was completely removed. At this time, the full-exposure resist 25 5 1 is gradually removed from -40 to 200827949, and the re-formed photoresist 25 53, which has a reduced thickness, has a thickness as a photoresist. Further, the upper surface of the photoresist 25 5 3 is formed to maintain the predetermined shape. Continuing with the development of the developing solution, an undercut portion 2554 (stage S2004) is formed at the lower portion of the periphery of the predetermined shape. wherein, preferably, as shown in FIG. 17(c), the photoresist is formed again. 2553 is preferably a two-layer structure φ formed by the upper photoresist 25 5 1 a and the lower photoresist 25 5 1 b. The solubility of the upper layer resist 25 5 1 a and the lower layer resist 25 5 1 b for the developing solution is different, and the lower layer resist 255 1 b is set to be more soluble than the upper layer resist 255 1 a for the developing solution. higher. Thereby, the undercut portion 2554 can be formed more surely and the yield can be improved. Further, the solubility of the upper photoresist 255 1 a and the lower photoresist 255 1b is poor, and for example, two or more kinds of photoresist resins may be blended to adjust the composition, or the photoreaction may be used to have a difference in hardening degree. Gives poor solubility. Next, as shown in Fig. 13, on the glass substrate 2010, a conductive material is vapor-deposited to form a pixel electrode 2612 separated from each other and a conductor film 2611 on the photoresist (stage S2005). Next, a method of forming the pixel electrode 2612 and the conductive film 2611 on the photoresist will be described with reference to the drawings. Fig. 18 is a schematic view showing the formation of a conductor film in the method for manufacturing a TFT substrate according to the second embodiment of the present invention, wherein (a_) shows an enlarged cross-sectional view, and (b) shows a detailed view of E5. In FIG. 18, a transparent conductive material is vapor-deposited on the glass substrate 20 10 to form a conductor film 2061 (pixel electrodes 2612 separated from each other and a conductor film 2611 on the photoresist of the light-resistance 2611) (stage S2005) . That is, after the transparent conductive material is vapor-deposited on the glass substrate 20 1 0, the conductive film 2611 on the photoresist is formed on the photoresist 2553. Further, a pixel electrode 2612 is formed on the exposed drain electrode 2042 and the protective insulating film 2054. The pixel electrode 2612 is separated from the conductor film 26 1 1 on the photoresist by an undercut portion 25 54 and is not electrically connected. The pixel electrode 2612 is electrically connected to a drain electrode 2042 via a contact hole 2541. As the conductive material, generally, indium oxide, zinc oxide (IZO), indium oxide, tin oxide (ITO), amorphous indium oxide, tin oxide (a-ITO), titanium oxide, antimony oxide, or tin oxide can be used. Zinc oxide, tin oxide, antimony oxide, fluorine-doped tin oxide, and a combination of these. Since these electrode-forming films are completely insoluble in the film-forming composition, a small amount of the necessary pixel electrode 2612 can be dissolved, and the fear of lowering the manufacturing yield can be eliminated. Further, since the specific gravity of the conductor film is about 5 times or more the specific gravity of the film-forming composition, precipitation separation or centrifugal separation can be performed easily and with high precision. Next, as shown in FIG. 13, the film-forming composition is supplied to the glass substrate 201 0, and the conductive film 26 1 1 on the photoresist is peeled off from the glass substrate 20 1 0 (stage S2006), and the used film is continuously peeled off. The composition separates the conductor film 26 11 on the photoresist and reuses it (stage S2007). Next, the method of separating the conductive film 2611 on the photoresist from the glass substrate 2010, and separating the conductive film 2611 on the peeled photoresist from the used film-forming composition, and using the used The method of stripping the composition is described with reference to the drawings. In the method for manufacturing a TFT substrate according to the second embodiment of the present invention, a film stripping step of peeling off the conductor film on the photoresist and reusing the used stripping film composition are shown. A schematic cross-sectional view of the recycling step. In Fig. 19, the glass substrate 2010 of the laminated conductor film 206 1 is melted by the stripping device 2007 to form a photoresist film 2511 on the photoresist (2610) in the stripping step (stage S2006). The stripping device φ 2007 is a storage tank 207 that stores a stripping liquid 2070 containing a stripping composition, and a spray nozzle 2072, a pump 2073, and a suction duct 2074 that spray the stripping liquid 2070 on a glass substrate 2010. to make. In the stripping step of the present embodiment, the peeling liquid 2070 is sprayed by the spray nozzle 2 072 in a spray form, and thus passes through the small gap and then enters the peeling liquid 2070 at the undercut portion 25 54 , so that the photoresist can be effectively dried. The upper conductor film 2611 is peeled off from the glass substrate 2010. Further, Fig. 19 shows the state in the stripping state in which a portion of the reshaped portion is formed into a photoresist 2553 and a conductor film 2611 on the photoresist. Further, the film-forming composition contained in the stripping solution 2070 is a film-forming resist for stripping which is used for stripping and forming a photoresist 25 53 . The photoresist stripper contains an amine compound and an aprotic polar compound. Examples of the amine compound include monoethanolamine, monoisopropanolamine, methylmethanolamine, ethylethanolamine, dimethanolamine, amine ethoxyethanolamine, diethanolamine, and the like (Fig. 20, 21 for reference). Further, each of the above amine-based compounds may be used singly or in combination of two or more. Examples of the aprotic polar compound include N-methyl-2-43-200827949 pyrrolidone, N,N-dimethylacetamide, hydrazine, hydrazine dimethylformamide, n, N. - dimethylimidazole, dimethyl hydrazine, etc. (see Figure 22 for reference). Further, the above aprotic polar compounds may be used singly or in combination of two or more. Further, the photoresist for film stripping agent is preferably an azeotropic polar compound containing from about 20 to 80% by weight of the amine compound and from about 20 to 80% by weight. Thus, only the photoresist 25 353 is dissolved and formed, and no damage is caused to the necessary pixel electrode 26 12, so that productivity and reliability can be improved. The reason why the photoresist for stripping agent contains about 20 to 80% by weight of the amine compound is that if the content of the amine compound is less than about 20% by weight, the photoresist cannot be dissolved in a short time to form a photoresist 255. 3. When the content of the amine compound exceeds about 80% by weight, the photoresist film formed in the photoreceptor electrode 2612 is irritated by the dissolution of the photoreceptor 2 5 5 3 to induce the pixel electrode. Damage to 2612. Further, when the amine compound exceeds about 80% by weight, the amount of volatilization of the film-forming composition increases, and there is a concern that the composition ratio of the film-forming composition changes. Accordingly, in the film-forming composition of the present invention, the content of the amine compound is preferably from about 2 to 80% by weight, preferably from 30 to 70% by weight. Further, the reason why the photoresist for the photoresist contains about 20 to 80% by weight of the aprotic polar compound is that if the content of the aprotic polar compound is less than about 20% by weight, the photoresist 25 53 is peeled off. The membrane time will increase, or the liquid life will be shortened when reused. Further, when the content of the aprotic polar compound exceeds about 80% by weight, the uranium of the pixel electrode 26 1 2 may be caused when the photoresist is formed into a film 2553. Therefore, in the stripping composition of the present invention, the content of the aprotic polar compound is from about 20 to 80% by weight, preferably from -44 to 200827949, preferably from about 30 to 70% by weight. For example, the film-forming composition is not limited to the above-mentioned composition, and the film-penetrating agent is not limited to the above-mentioned composition, and may contain the alkoxy compound represented by the following general formula 1 or ethylene carbonate. [Chemical 4]

〇II R1-O-CH2CH2-C—NR2R3 (一般式1) 其中，Rl、R2、R3各獨立爲碳數1至10 如此，僅溶解再形成光阻2 5 5 3，對於畫5 不會造成傷害，故可提高產率及信賴性。又， 烯醯胺化合物爲水溶性，故可提供一種無引火 膜組成物。 如此，上述剝膜組成物爲溶解再形成光阻 形成光阻2553之上面所形成之光阻上的導電I φ 可由玻璃基板20 1 0分離。 又，剝膜組成物因不溶解導電體膜206 1， 解畫素電極2612之顧慮。即，畫素電極2612 組成物而受到損傷，故可選擇最適剝膜條件。 實施形態之剝膜組成物時，噴霧噴射時間約 ，較佳爲約1〜3分鐘。又，再形成光阻2 5 5 3 電膜之溶解爲約30°C〜60°C的溫度範圍下進行 約40〜50°C爲更佳。 其次，由玻璃基板2010分離之光阻上 的烷基。 峰電極 2612 因烷氧基丙 性之安全剝 2553 ，於再 簦膜2611皆 故可排除溶 不會因剝膜 一般使用本 0.5〜5分鐘 之蝕刻及導 ^爲佳，且以 的導電體膜 -45- 200827949 261 1與剝離液2070同時流入貯藏槽207 1。此時，經剝離 之光阻上的導電體膜2611於剝離液2070中以粒子或絲狀 體等微小片形式混入。光阻上含有導電體膜26 1 1之剝離 液2070 (又稱爲使用過的剝膜組成物）流入貯藏槽2071 時，貯藏槽207 1中光阻上之導電體膜2611會沈澱。 其中，上述微小片以密度較大爲佳。即，使用過的剝 膜組成物中所存在之微小片的比重比剝膜組成物之比重大 • 極多，故貯藏槽2071内容易沈澱，而可分離，未含微小 片之剝離液2070可容易且有效率地再利用。 又，本實施形態中，於貯藏槽207 1將使用過的剝膜 組成物導入另一端之導引板271 1，藉由吸入導管74所在 位置之另一端上欲使微小片（光阻上之導電體膜2611)不 要移動而設置遮蔽板2712，可更確實地防止於吸入導管 20 74吸入光阻上之導電體膜2611。 且，分離使用過的剝膜組成物所含之光阻上的導電體 # 膜2 6 1 1之方法，並未僅限定於上述方法，例如於専用之 沈澱槽中靜置約1 〇〜3 〇分鐘，藉由傾析法收集澄清液之 方法亦佳。 其次，於貯藏槽207 1内完全沈澱光阻上之導電體膜 2611，未含有光阻上之導電體膜2611的剝離液2070藉由 幫浦2 073由吸入導管2074吸入，自噴霧嘴2072再次往 玻璃基板20 1 0吹。即’自使用過的剝膜組成物將光阻上 之導電體膜2611分離後再利用（階段S2007 )。 圖23表示欲說明本發明的第二實施形態中之TFT基 -46- 200827949 板的製造方法之槪略圖，（a)表示形成畫素電極之平面 圖，（b)表示F’-F’擴大截面圖。 圖23中，TFT基板200 1經剝膜步驟，除去再形成光 阻2553及光阻上之導電體膜2611，露出畫素電極2612及 保護用絶緣膜2054。 且，本實施形態的TFT基板2001之製造方法爲’使 用第一光罩、第二網目光罩及第三網目光罩之三片光罩， • 可減少製造步驟而生產性優良者。 如此所謂本實施形態之TFT基板2001之製造方法’ 剝膜步驟中所使用之剝膜組成物的回收可更確實且有效率 地進行，進而可提高品質及生產性。 其次，對於上述TFT基板之製造方法的實施例及比較 例做説明。 [實施例4] • 首先作爲剝膜組成物，準備由約30wt%之胺化合物及 約 70wt%之非質子性極性溶媒所成之剝離液I、與約 . 70wt%之胺化合物及約30wt%之非質子性極性溶媒所成之 剝離液II (表4做參考）。 [表4] 實施例 剝離液組成（Wt%) 胺化合物 非質子極性溶劑 剝離液I 30 70 剝離液II 70 30 -47- 200827949 且，作爲胺化合物，使用單乙醇胺，作爲非質子性極 性溶媒使用二甲基亞颯（DMSO)。 作爲玻璃基板，使用約100mmxl00mmx0.7mm之正方 形的玻璃基板，以純水噴淋進行洗淨後，將光阻使用轉動 塗佈進行塗佈。光阻爲使用日本 ΖΕΟΝ製負型光阻： ΖΤΝ2464-27。繼續於約80°C下進行約15分鐘燒烤之加熱 後，以曝光強度300mJ/Cm2進行曝光。作爲所使用之光罩 ，使用以約2 0 μιη之條紋與約9 0 μπι之空間的順序配置之 條紋光罩。 其次，於四甲基銨氫氧化物之約2.8 wt%水溶液下進 行顯像，得到上述條紋·空間之條紋圖型。顯像後以純水 噴淋洗淨，藉由吹氣除去洗淨水後於約1 3 0 °C下進行約1 5 分鐘的燒烤加熱。 其次，於上述玻璃基板上，使用IZO ( In2〇3 : ZnO = 約 90 : 10wt% )的標的，以陰極噴鍍法成膜成厚度約 1 OOnm之薄膜。 剝離液I及剝離液II於約3 5 °C下進行加溫後，將上 述所得之玻璃基板，於上述剝離液中浸漬2分鐘，進行光 阻剝離，以純水洗淨並吹氣後，以乾燥器進行乾燥，得到 IZO所成之薄膜（幅約90 μπι )、及形成約20 μιη之空間的 玻璃基板。 將使用過的剝離液I、及使用過的剝灕液Π之内容物 以光學顯微鏡進行觀察時，確認存在經剝離之寬度約 2 0μπι的線圏狀之ΙΖΟ薄膜（圖24做參考）。 -48- 200827949 約 薄 的 阻 玻 藉 剝 J 上 丙 使 底 〇 30 沈 可 操 又，將使用過的剝離液I、及使用過的剝離液Π於 3 5 °C下靜置約1 0分鐘後，上述線圈狀ΙΖΟ薄膜會沈澱 於底部可被確認出沈澱，澄清液中未觀察到線圏狀IZO 膜。且，上述使用過的剝離液I、及使用過的剝離液Π 澄清液所成的澄清剝離液中，進行對於新玻璃基板之光 剝離後，確認出可進行正常之光阻剝離。又，經剝離之 璃基板上，未觀察到線圈狀IZO、或粉末狀IZO。 且，，將上述使用過的剝離液I及使用過的剝離液II 由離心分離器，可分離固體及液體，藉由經分離之再生 離液I及再生剝離液II，可對新玻璃基板進行光阻剝離 並確認可進行正常之光阻剝離。又，經剝離之玻璃基板 未觀察到線圈狀IZO、或粉末狀IZO。 又，取代上述剝離液I，使用η-丁氧基-N，N-二甲基 烯醯胺時，可確認以同樣操作可進行剝離操作。靜置該 用過的剝離液約1 0分鐘後，沈澱線圈狀IZO薄膜，於 部確認有沈澱。且澄清液中未觀察到線圈狀之IZO薄膜 又，上述η-丁氧基二甲基丙烯醯胺中添加約 重量％之水，實施同樣操作。與未添加水之情況做比較 得到幾乎相同之剝離效果。又確認出線圈狀IZO薄膜之 澱狀態並無變化。如此添加水之剝離液因無引火性，故 提高安全性。 又，取代上述剝離液Ϊ，使用碳酸乙烯酯，以同樣 作下，確認可進行剝離操作。靜置該使用過的剝離液約 分鐘時，線圈狀IZO薄膜會沈澱，於底部可確認有沈澱 -49- 10 200827949 且澄清液中未觀察到線圈狀IZO薄膜。 於此IZO係由氧化銦•氧化鋅所成非晶體之導驚膜’ 添加約l〇wt%之氧化鋅的氧化銦所成之非晶質膜。氧化鋅 之添加量可適宜地選擇，但添加約5〜40wt%之氧化鋅時 可得到良好結果。 又，取代上述IZO使用氧化銦·氧化錫（ITO )、非 晶體氧化銦·氧化錫（a-ITO )、氧化鈦·氧化鈮、氧化 • 錫·氧化鋅、氧化錫•氧化銻、氟摻合氧化錫，亦可同樣 地無問題下進行剝離。藉由靜置使用過的剝離液I，ΓΙ約 1 〇分鐘後沈澱剝離液I，II中之導電體膜，再使用剝離液 I，II，亦可無問題下剝膜光阻，且於基板上未觀察到導電 體膜之粒子等。 其中，氧化銦·氧化錫（ITO )爲添加約5〜l5wt%之 氧化錫的氧化銦。非晶體氧化銦·氧化錫（a-ITO )爲經 非晶體化之ITO膜。氧化鈦•氧化鈮爲，添加約0· 1〜 # 5wt%之氧化鈮的氧化鈦。氧化錫·氧化鋅爲，氧化錫：約 60〜95wt%，氧化鋅：約5〜40wt%所成之複合氧化物。氧 化錫·氧化銻爲，添加約0.5〜5 wt %之氧化銻的氧化錫。 氟摻合氧化錫爲，添加約0.0 1〜1 wt%之氟的氧化錫。這 些氧化錫系之導電膜於草酸等弱酸下，難由蝕刻加工進行 圖型化，如於該實施例中藉由光阻剝落法（lift-off )可有 效地進行圖型化加工。 比較例2 -50- 200827949 實施例所使用之使用過的剝離液I及使用過的剝離液 II可直接使用，對於新玻璃基板進行光阻剝離時，確認可 正常地進行光阻剝離。但，經剝離之玻璃基板上，確認有 粉末狀IZO附著。 液晶面板爲，經由後步驟之配向膜塗佈或配向處理、 液晶注入、封止步驟而製成，但上述附著物會於後步驟擴 散於配向膜中、或擴散於液晶中，而造成顯示缺陷或顯示 Φ 不良之原因。 〔剝膜組成物之回收方法中的第二實施形態〕 又，本發明作爲剝膜組成物之回收方法亦爲有效。 本實施形態中之剝膜組成物的回收方法幾乎爲與上述 之第二實施形態的TFT基板之製造方法相同者。 即，基板2010上形成薄膜晶體管2050 (階段S2001 )，繼續於玻璃基板2010及薄膜晶體管20 5 0上，層合保 II 護用絶緣膜2054 (階段S2002 )。其次，於保護用絶緣膜 2054上層合光阻205 5 (階段S2003 )，繼續使用網目曝 光技術（第三網目光罩（無圖示）），將層合之光阻2055 形成所定之形狀後進行飩刻，再形成光阻2055，於再形成 之光阻（再形成光阻 25 53 )的周邊下部形成咬邊（ undercut )部25 54 (階段 S20 04 )。其次，於玻璃基板 2010之上方蒸鍍透明之導電性物質，形成互相分離之畫素 電極2612及光阻上的導電體膜2611 (階段S2005 )。且 ，於玻璃基板2010供給剝膜組成物，將光阻上之導電體 -51 - 200827949 膜2611.由玻璃基板2010剝離（階段S2006 )，繼續由使 用過的剝膜組成物分離光阻上之導電體膜2611並再利用 (階段 S2007 )。 如此，所謂本實施形態之剝膜組成物的回收方法，將 由玻璃基板2010剝離之光阻上的導電體膜261 1可由使用 過的剝膜組成物幾乎完全分離，故不會降低產率下，可再 利用使用過的剝膜組成物。 φ 以上，雖對於本發明的剝膜組成物、TFT基板之製造 方法及剝膜組成物之回收方法，以較佳實施形態做説明， 但有關本發明之剝膜組成物、TFT基板之製造方法及剝膜 組成物之回收方法並未僅限定於上述實施形態中，於本發 明的範圍下無疑地可做種種變更而實施。 例如，上述剝膜組成物之各實施形態中，剝膜組成物 中於不會對該剝膜組成物之性能造成壞影響之範圍下，可 添加抑制供給時起泡的溶劑、或減少黏度之稀釋劑等。 • 又，TFT基板之製造方法的第二實施形態中，於貯藏 槽207 1，雖可採用沈澱並分離經剝膜光阻上的導電體膜 . 26 1 1之沈澱式分離法，分離方法並未僅限定於此。例如， 亦可採用離心分離器或迴旋加速器等進行離心式分離法、 或過濾器等之過濾式分離法。且亦未僅限定於採用沈澱式 分離法、離心式分離法、及過濾式分離法之任一方法。例 如，可組合上述各分離法後採用。 【圖式簡單說明】 -52- 200827949 [圖1] 圖1表示欲說明本發明的第一實施形態之剝膜組成物 中，含於剝膜組成物之胺系化合物的例子之結構式。 [圖2] 圖2表示欲說明本發明的第一實施形態之剝膜組成物 中，含於剝膜組成物之胺系化合物的例子之結構式。 [圖3] 圖3表示欲說明本發明的第一實施形態之剝膜組成物 中，含於剝膜組成物之非質子性極性化合物的例子之結構 式。 [圖4] 圖4表示欲說明本發明的第一實施形態之TFT基板之 製造方法的槪略流程圖。 [圖5 ] 圖5表示欲說明本發明的第一實施形態之TFT基板之 製造方法的槪略圖，其中（a )表示形成閘配線及閘電極 ，且層合閘絶緣膜之平面圖，（b)表示A-A擴大截面圖 [圖6] 圖6表示欲說明本發明的第一實施形態之TFT基板之 製造方法的槪略圖，其中（a )表示形成薄膜晶體管，且 餍合保護用絶緣膜之平面圖，（b)表示B-B擴大截面圖 [圖7] -53- 200827949 圖7表示本發明的第一實施形態之TFT基板之製造方 法的槪略圖，（a )表示保護用絶緣膜上之光阻形成爲所 定形狀之平面圖，（b)表示C-C擴大截面圖。 [圖8] 圖8表示欲說明本發明的第一實施形態之TFT基板之 製造方法的槪略圖，（a)表示形成接觸孔（contact hole )之擴大截面圖，（b)表示光阻再形成的咬邊（undercut )部所形成之擴大截面圖，（c )表示D部詳細圖。 [圖9] 圖9表示欲說明本發明的第一實施形態之TFT基板之 製造方法，形成導電體膜之槪略圖，其中（a )表示擴大 截面圖，（b )表示E部詳細圖。 [圖 10] 圖1 0表示欲說明本發明的第一賓施形態之TFT基板 之製造方法中，剝膜光阻上之導電體膜的剝膜步驟、及再 利用使用過的剝膜組成物之回收步驟的槪略截面圖。 [圖 11] 圖1 1表示欲說明本發明的第一實施形態之TFT基板 之製造方法的槪略圖，其中（a)表示形成畫素電極之平 面圖，（b)表示F-F擴大截面圖。 [圖 12] 圖1 2表示未溶解於實施例1〜3之剝膜組成物而殘留 之光阻上的導電體膜之照片。 [圖 13] -54- 200827949 圖13表τκ欲說明本發明的第二實施形態之TFT基板 之製造方法的槪略流程圖。 m 14] 圖14表7Γ；欲說明本發明的第二實施形態之τρτ基板 之製造方法的槪略圖，其中（a )表示形成閘配線及閘電 極’且層合鬧絶緣膜之平面圖’ （b)表不A，-A’擴大截面 圖。 [圖 15] 圖1 5表示欲說明本發明的第二實施形態之TFT基板 之製造方法的槪略圖，其中（a )表示形成薄膜晶體管， 且層合保護用絶緣膜之平面圖，（b)表示B’-B’擴大截面 圖。 [圖 16] 圖1 6表示欲說明本發明之第二實施形態的TFT基板 之製造方法的槪略圖，其中（a)表示保護用絶緣膜上的 光阻形成爲所定之形狀的平面圖，（b)表示C’-C’擴大截 面圖。 [圖 17] 圖1 7表示欲說明本發明之第二實施形態的TFT基板 之製造方法的槪略圖，其中（a )表示形成接觸孔（ contact hole )之擴大截面圖，（b)表示在形成光阻，形 成咬邊（undercut)部之擴大截面圖’ （c)表不D’部詳 細圖。 [圖 18] -55- 200827949 圖18表示本發明的第二實施形態之TFT基板的製造 方法中形成導電體膜之槪略圖，（a)表示擴大截面圖~’ (b )表示E ’部詳細圖。 [M 19] 圖19表示欲說明本發明的第二實施形態之TFT基板 的製造方法中’剝膜光阻上的導電體膜之剝膜步驟、及再 利用使用過的剝膜組成物之回收步驟的槪略截面圖。 [圖 2 0 ] 圖20表示欲說明本發明的第二實施形態之TFT基板 的製造方法中’含於剝膜組成物之胺系化合物的例子之結 構式。 [圖 21] 圖21表示欲說明本發明的第二實施形態之TFT基板 的製造方法中’含於剝膜組成物之胺系化合物的例子之結 構式。 [圖 22] 斷22表示欲說明本發明的第二實施形態之TFT基板 的製造方法中’含於剝膜組成物之非質子性極性化合物的 例子之結構式。 [圖 23] 圖23表示欲說明本發明之第二實施形態的TFT基板 之製造方法的槪略圖’其中（a)表示形成畫素電極之平 面圖，（b)表示F’-F’擴大截面圖。 [圖 24] -56- 200827949 圖24表示未溶解於實施例4之剝膜組成物的殘留之 光阻上的導電體膜之照片。 【主要元件符號說明】 100 1 : TFT 基板 1 007 :剝膜裝置 1 0 1 0 :玻璃基板 _ 1 021 :閘配線 1 0 2 3 :閘絶緣膜 1 0 3 1 :電源配線 1 032 ：電源電極 1 03 3 :導電體薄膜 1 042 :汲極電極 1 050 :薄膜晶體管 1051 :通道部 _ 1 052 :非晶體矽薄膜 1 053 : η型非晶體矽薄膜 1 054 :保護用絶緣膜 1 〇 5 5 :光阻 1 056 :開口部 1 070 :剝離液 1 0 7 1 :電磁閥 1071a :貯藏槽 107 1b :貯藏槽 -57- 200827949 1 072 :噴霧嘴 1 073 :幫浦 1 074 :吸入導管 1 0 7 5:回收槽 1 076 :回收導管 1541 :接觸孔 1 5 5 1 :全曝光光阻 φ 1 5 5 1 a :上層光阻 1 5 5 1 b :下層光阻 1 552 :網目曝光光阻 1 5 5 3 :再形成光阻 1 5 5 4 :咬邊部 1 6 1 1 :導電體膜 1 6 1 2 :畫素電極 1 7 1 1 :電磁閥 • 1 7 1 2 :電磁閥 1 7 6 1 :電磁閥 1 7 6 2 :電磁閥 2007 :剝膜裝置 2 0 1 0 :玻璃基板 2 021 :閘配線 2022 :閘電極 2023 ：閘絶緣膜 203 1 :電源配線 -58 200827949 2032 ：電源電極 2033 :導電體薄膜 2042 :汲極電極 2050 :薄膜晶體管 205 1 :通道部 2052 :非晶體矽薄膜 205 3 : η型非晶體矽薄膜 _ 2054 :保護用絶緣膜 2 0 5 5 :光阻 2056 ：開口部 2070 :剝離液 2072 :噴霧嘴 2073 :幫浦 2074 :吸入導管 2 5 4 1 :接觸孔 • 2 5 5 1 :全曝光光阻 2 5 5 1 a :上層光阻 2551b:下層光阻 2 5 5 2 :網目曝光光阻 2 5 5 3 :再形成光阻 2 5 54 ：咬邊部 2611 :導電體膜 2 6 1 2 :畫素電極 2711 :導弓|板 -59-〇II R1-O-CH2CH2-C-NR2R3 (General Formula 1) wherein R1, R2, and R3 are each independently a carbon number of 1 to 10, so that only the photoresist is formed to dissolve 2 5 5 3, which does not cause Damage, so it can improve productivity and reliability. Further, since the ketamine compound is water-soluble, it is possible to provide a composition without a pyrophoric film. Thus, the conductive film I φ on the photoresist formed by dissolving and forming the photoresist forming resist 2553 can be separated by the glass substrate 20 10 . Further, the film peeling composition has a concern that the conductor film 2061 is not dissolved by the conductor film 2061. That is, since the composition of the pixel electrode 2612 is damaged, the optimum film peeling condition can be selected. In the case of the film-forming composition of the embodiment, the spray ejection time is about 1, preferably about 1 to 3 minutes. Further, it is more preferable to form a photoresist 2 5 5 3 to dissolve the electric film at a temperature of about 30 ° C to 60 ° C for about 40 to 50 ° C. Next, the alkyl group on the photoresist separated by the glass substrate 2010. The peak electrode 2612 is stripped of 2553 by alkoxy propylene, and it can be removed in the re-ruthenium film 2611. It is not necessary to use the 0.5~5 minute etching and guiding method for stripping, and the conductive film is preferred. -45- 200827949 261 1 simultaneously flows into the storage tank 207 1 together with the stripping liquid 2070. At this time, the conductor film 2611 on the peeled photoresist is mixed in the peeling liquid 2070 as fine particles such as particles or filaments. When the stripping liquid 2070 (also referred to as the used stripping film composition) containing the conductor film 26 1 1 on the photoresist flows into the storage tank 2071, the conductor film 2611 on the photoresist in the storage tank 207 1 is precipitated. Among them, the above microchips are preferably denser. That is, the specific gravity of the micro-sheets present in the used film-forming composition is much larger than that of the film-spraying composition. Therefore, the storage tank 2071 is easy to precipitate and can be separated, and the peeling liquid 2070 which does not contain the micro-sheet can be used. Reuse easily and efficiently. Further, in the present embodiment, the used film-forming composition is introduced into the guide plate 271 1 at the other end in the storage tank 207 1 , and the other end of the position where the suction duct 74 is located is intended to make a microchip (on the photoresist). The conductor film 2611) is provided with the shielding plate 2712 so as not to move, and the conductive film 2611 on the light-resistance of the suction duct 2074 can be more reliably prevented. Further, the method of separating the conductor #6 1 1 1 on the photoresist included in the used stripping composition is not limited to the above method, for example, it is allowed to stand in the precipitation tank for about 1 〇 3 In a minute, the method of collecting the clear liquid by decantation is also preferable. Next, the conductor film 2611 on the photoresist is completely deposited in the storage tank 207 1 , and the stripping liquid 2070 not including the conductor film 2611 on the photoresist is sucked by the suction duct 2074 by the pump 2 073, and again from the spray nozzle 2072 Blowing on the glass substrate 20 1 0. That is, the conductor film 2611 on the photoresist is separated from the used film-forming composition and reused (stage S2007). Fig. 23 is a schematic view showing a method of manufacturing a TFT-46-200827949 board according to a second embodiment of the present invention, wherein (a) shows a plan view of a pixel electrode, and (b) shows an enlarged cross section of F'-F'. Figure. In Fig. 23, the TFT substrate 200 1 is subjected to a stripping step to remove the resist film 2553 and the conductor film 2611 on the photoresist to expose the pixel electrode 2612 and the protective insulating film 2054. Further, the method of manufacturing the TFT substrate 2001 of the present embodiment is to use three masks of the first mask, the second mesh mask, and the third mesh mask, and it is possible to reduce the number of manufacturing steps and to improve the productivity. In the method for producing the TFT substrate 2001 of the present embodiment, the recovery of the film-forming composition used in the stripping step can be carried out more reliably and efficiently, and the quality and productivity can be improved. Next, an embodiment and a comparative example of the method of manufacturing the above TFT substrate will be described. [Example 4] First, as a film-forming composition, a peeling liquid I obtained from about 30% by weight of an amine compound and about 70% by weight of an aprotic polar solvent, and about 70% by weight of an amine compound and about 30% by weight were prepared. The stripping solution II formed by the aprotic polar solvent (Table 4 for reference). [Table 4] Example Stripping Solution Composition (Wt%) Amine Compound Aprotic Polar Solvent Stripping Solution I 30 70 Stripping Solution II 70 30 -47- 200827949 Also, as an amine compound, monoethanolamine was used as an aprotic polar solvent. Dimethylammonium (DMSO). As the glass substrate, a glass substrate of a square shape of about 100 mm x 100 mm x 0.7 mm was used, and after washing with pure water spray, the photoresist was applied by spin coating. The photoresist is a negative photoresist of the Japanese ΖΕΟΝ: ΖΤΝ2464-27. After heating at about 80 ° C for about 15 minutes, the exposure was carried out at an exposure intensity of 300 mJ/cm 2 . As the photomask to be used, a stripe mask which is arranged in the order of a space of about 20 μm and a space of about 90 μm is used. Next, development was carried out under an aqueous solution of about 2.8 wt% of tetramethylammonium hydroxide to obtain a stripe pattern of the above-mentioned stripe/space. After the development, the mixture was washed with pure water, and the washing water was removed by blowing, and then subjected to barbecue heating at about 130 ° C for about 15 minutes. Next, on the above glass substrate, a film having a thickness of about 100 nm was formed by a cathode sputtering method using a target of IZO (In2〇3: ZnO = about 90: 10% by weight). After the peeling liquid I and the peeling liquid II were heated at about 35 ° C, the glass substrate obtained above was immersed in the peeling liquid for 2 minutes, stripped, and washed with pure water and blown. The film was dried in a desiccator to obtain a film made of IZO (approximately 90 μm) and a glass substrate having a space of about 20 μm. When the contents of the used peeling liquid I and the used peeling liquid Π were observed by an optical microscope, it was confirmed that there was a ruthenium-like film having a peeling width of about 20 μm (see Fig. 24 for reference). -48- 200827949 After the thinning of the glass, the bottom 〇 30 is allowed to work, and the used stripping solution I and the used stripping solution are allowed to stand at 35 ° C for about 10 minutes. The above-mentioned coil-shaped tantalum film was precipitated at the bottom to be confirmed to precipitate, and no wire-like IZO film was observed in the clear liquid. Further, in the clear peeling liquid obtained by using the above-mentioned peeling liquid I and the used peeling liquid 澄清 clarified liquid, it was confirmed that normal light-resistance peeling was possible after light detachment of the new glass substrate. Further, no coiled IZO or powdery IZO was observed on the peeled glass substrate. Further, the used peeling liquid I and the used stripping liquid II can be separated from the solid and the liquid by the centrifugal separator, and the separated glass I and the regenerated stripping liquid II can be separated from the new glass substrate. The photoresist was peeled off and it was confirmed that normal photoresist peeling was possible. Further, no coiled IZO or powdery IZO was observed on the peeled glass substrate. Further, when η-butoxy-N,N-dimethyl decylamine was used instead of the above-mentioned peeling liquid I, it was confirmed that the peeling operation was carried out in the same manner. After the used peeling solution was allowed to stand for about 10 minutes, a coil-shaped IZO film was precipitated, and precipitation was confirmed in the part. Further, a coil-shaped IZO film was not observed in the clarified liquid, and about 5% by weight of water was added to the above η-butoxydimethyl methacrylate, and the same operation was carried out. Comparing with the case where no water is added, almost the same peeling effect is obtained. Further, it was confirmed that the state of the coiled IZO film did not change. Since the stripping liquid thus added is not ignitable, safety is improved. Further, in place of the above-mentioned peeling liquid crucible, vinyl carbonate was used, and in the same manner, it was confirmed that the peeling operation was possible. When the used peeling solution was allowed to stand for about a minute, the coil-shaped IZO film was precipitated, and precipitation was confirmed at the bottom - 49 - 10 200827949 and no coil-shaped IZO film was observed in the clear liquid. Here, IZO is an amorphous film formed by adding indium oxide of about 1% by weight of zinc oxide by an indium oxide or zinc oxide. The amount of zinc oxide added can be suitably selected, but good results are obtained when about 5 to 40% by weight of zinc oxide is added. Further, in place of the above IZO, indium oxide, tin oxide (ITO), amorphous indium oxide, tin oxide (a-ITO), titanium oxide, cerium oxide, oxidized tin, zinc oxide, tin oxide, antimony oxide, fluorine blending are used. Tin oxide can also be peeled off without problems. By leaving the used stripping solution I, the conductive film in the stripping solution I, II is precipitated after about 1 minute, and then the stripping liquid I, II is used, and the photoresist can be peeled off without problems, and the substrate is used. No particles or the like of the conductor film were observed. Among them, indium oxide and tin oxide (ITO) are indium oxide to which about 5 to 15% by weight of tin oxide is added. The amorphous indium tin oxide (a-ITO) is an amorphous ITO film. Titanium oxide • Cerium oxide is a titanium oxide added with about 0·1 to #5 wt% of cerium oxide. The tin oxide·zinc oxide is a composite oxide formed by tin oxide: about 60 to 95% by weight, zinc oxide: about 5 to 40% by weight. Tin oxide·cerium oxide is tin oxide added with about 0.5 to 5 wt% of cerium oxide. The fluorine-doped tin oxide is tin oxide added with about 0.01 to 1% by weight of fluorine. These tin oxide-based conductive films are difficult to be patterned by etching treatment under a weak acid such as oxalic acid, and can be effectively patterned by lift-off in this embodiment. Comparative Example 2 - 50 - 200827949 The used peeling liquid I and the used peeling liquid II used in the examples were used as they are, and when the new glass substrate was subjected to photoresist peeling, it was confirmed that the resist peeling was normally performed. However, it was confirmed that the powdered IZO adhered to the peeled glass substrate. The liquid crystal panel is formed by an alignment film coating or alignment treatment, a liquid crystal injection, and a sealing step in a subsequent step, but the deposit may be diffused in the alignment film or diffused in the liquid crystal in a subsequent step to cause display defects. Or display the cause of Φ defect. [Second embodiment of the method for recovering the film-forming composition] Further, the present invention is also effective as a method for recovering the film-forming composition. The method for recovering the film-forming composition in the present embodiment is almost the same as the method of manufacturing the TFT substrate of the second embodiment described above. That is, the thin film transistor 2050 is formed on the substrate 2010 (stage S2001), and the protective insulating film 2054 is laminated on the glass substrate 2010 and the thin film transistor 2050 (stage S2002). Next, the photoresist 205 5 is laminated on the protective insulating film 2054 (stage S2003), and the mesh exposure technique (third mesh mask (not shown)) is continued, and the laminated photoresist 2055 is formed into a predetermined shape. After etching, a photoresist 2055 is formed, and an undercut portion 25 54 is formed at a lower portion of the periphery of the reformed photoresist (reformed photoresist 25 53 ) (stage S20 04 ). Next, a transparent conductive material is vapor-deposited on the glass substrate 2010 to form mutually separated pixel electrodes 2612 and a conductor film 2611 on the photoresist (stage S2005). Further, the film-forming composition is supplied to the glass substrate 2010, and the conductor-51 - 200827949 film 2611. on the photoresist is peeled off from the glass substrate 2010 (stage S2006), and the photoresist is separated from the used film-forming composition. The conductor film 2611 is reused (stage S2007). As described above, in the method for recovering the film-forming composition of the present embodiment, the conductor film 261 1 on the photoresist peeled off from the glass substrate 2010 can be almost completely separated from the used film-forming composition, so that the yield is not lowered. The used filming composition can be reused. φ or more, the film-forming composition of the present invention, the method for producing the TFT substrate, and the method for recovering the film-forming composition are described in the preferred embodiment, but the film-forming composition of the present invention and the method for producing the TFT substrate The method of recovering the film-forming composition is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention. For example, in each of the embodiments of the film-forming composition, the film-forming composition may be added with a solvent that suppresses foaming during supply, or may have a reduced viscosity, without adversely affecting the performance of the film-forming composition. Thinner, etc. Further, in the second embodiment of the method of manufacturing a TFT substrate, in the storage tank 207 1, it is possible to precipitate and separate the conductor film on the stripped photoresist. The precipitation separation method of 26 1 1 , the separation method It is not limited to this. For example, a centrifugal separation method or a filtration separation method such as a filter may be employed using a centrifugal separator or a cyclotron. Further, it is not limited to any one of a sedimentation separation method, a centrifugal separation method, and a filtration separation method. For example, the above separation methods can be combined and used. [Brief Description of the Drawings] - 52 - 200827949 [Fig. 1] Fig. 1 is a structural formula showing an example of an amine-based compound contained in a film-forming composition in the film-forming composition of the first embodiment of the present invention. [Fig. 2] Fig. 2 is a structural formula showing an example of an amine-based compound contained in a film-forming composition in the film-forming composition of the first embodiment of the present invention. [Fig. 3] Fig. 3 is a structural diagram showing an example of an aprotic polar compound contained in a film-forming composition in the film-forming composition of the first embodiment of the present invention. Fig. 4 is a schematic flow chart for explaining a method of manufacturing a TFT substrate according to the first embodiment of the present invention. [ Fig. 5] Fig. 5 is a schematic view showing a method of manufacturing a TFT substrate according to a first embodiment of the present invention, wherein (a) shows a plan view of a gate insulating film formed by forming a gate wiring and a gate electrode, and (b) FIG. 6 is a schematic view showing a method of manufacturing a TFT substrate according to a first embodiment of the present invention, wherein (a) shows a plan view of a thin film transistor and a protective insulating film. (b) BB enlarged cross-sectional view [Fig. 7] - 53 - 200827949 Fig. 7 is a schematic view showing a method of manufacturing a TFT substrate according to the first embodiment of the present invention, and (a) shows that the photoresist on the protective insulating film is formed as A plan view of a predetermined shape, and (b) shows a CC enlarged cross-sectional view. 8] FIG. 8 is a schematic view showing a method of manufacturing a TFT substrate according to a first embodiment of the present invention, wherein (a) shows an enlarged cross-sectional view of forming a contact hole, and (b) shows formation of a photoresist. An enlarged cross-sectional view formed by the undercut portion, and (c) shows a detailed view of the D portion. [Fig. 9] Fig. 9 is a schematic view showing a method of manufacturing a TFT substrate according to a first embodiment of the present invention, in which a conductive film is formed, wherein (a) shows an enlarged cross-sectional view, and (b) shows a detailed view of an E portion. [Fig. 10] Fig. 10 is a view showing a stripping step of a conductor film on a stripping photoresist and a stripping composition used for reuse in a method for manufacturing a TFT substrate according to a first embodiment of the present invention; A schematic cross-sectional view of the recycling step. [Fig. 11] Fig. 11 is a schematic view showing a method of manufacturing a TFT substrate according to a first embodiment of the present invention, wherein (a) shows a plan view of a pixel electrode, and (b) shows an enlarged F-F cross-sectional view. Fig. 12 is a photograph showing a conductor film which is not dissolved in the photoresist of Examples 1 to 3 and remains on the photoresist. [Fig. 13] -54 - 200827949 Fig. 13 is a schematic flow chart for explaining a method of manufacturing a TFT substrate according to a second embodiment of the present invention. FIG. 14 is a schematic view showing a method of manufacturing a τρτ substrate according to a second embodiment of the present invention, wherein (a) shows a plan view of forming a gate wiring and a gate electrode and laminating an insulating film (b) ) Table A, -A' enlargement of the cross-sectional view. [ Fig. 15] Fig. 15 is a schematic view showing a method of manufacturing a TFT substrate according to a second embodiment of the present invention, wherein (a) shows a plan view of a thin film transistor and a protective film for lamination, and (b) shows B'-B' enlarged sectional view. [Fig. 16] Fig. 16 is a schematic view showing a method of manufacturing a TFT substrate according to a second embodiment of the present invention, wherein (a) shows a plan view in which a photoresist on a protective insulating film is formed into a predetermined shape, (b) ) indicates an enlarged cross-section of C'-C'. Fig. 17 is a schematic view showing a method of manufacturing a TFT substrate according to a second embodiment of the present invention, wherein (a) shows an enlarged cross-sectional view of forming a contact hole, and (b) shows formation. The photoresist is formed into an enlarged cross-sectional view of the undercut portion (c) showing a detailed view of the D' portion. FIG. 18 is a schematic view showing a formation of a conductor film in a method of manufacturing a TFT substrate according to a second embodiment of the present invention, and (a) shows an enlarged cross-sectional view of FIG. Figure. [M 19] FIG. 19 is a view showing a step of stripping a conductor film on a stripping photoresist and a recycling of a used stripping composition in a method for manufacturing a TFT substrate according to a second embodiment of the present invention. A schematic cross-sectional view of the steps. [Fig. 20] Fig. 20 is a view showing an example of the structure of an amine-based compound contained in the film-forming composition in the method for producing a TFT substrate according to the second embodiment of the present invention. [Fig. 21] Fig. 21 is a view showing an example of the structure of an amine-based compound contained in a film-forming composition in the method for producing a TFT substrate according to the second embodiment of the present invention. [Blocking] FIG. 22 is a structural formula showing an example of an aprotic polar compound contained in a film-forming composition in the method for producing a TFT substrate according to the second embodiment of the present invention. FIG. 23 is a schematic view showing a method of manufacturing a TFT substrate according to a second embodiment of the present invention, wherein (a) shows a plan view of a pixel electrode, and (b) shows an enlarged cross-sectional view of F'-F'. . [ Fig. 24] -56- 200827949 Fig. 24 shows a photograph of a conductor film which was not dissolved in the residual photoresist of the film-forming composition of Example 4. [Description of main component symbols] 100 1 : TFT substrate 1 007 : Stripping device 1 0 1 0 : Glass substrate _ 1 021 : Gate wiring 1 0 2 3 : Gate insulating film 1 0 3 1 : Power wiring 1 032 : Power supply electrode 1 03 3 : Conductive film 1 042 : Dip electrode 1 050 : Thin film transistor 1051 : Channel portion _ 1 052 : Amorphous germanium film 1 053 : η-type amorphous germanium film 1 054 : Protective insulating film 1 〇 5 5 : photoresist 1 056 : opening 1 070 : peeling liquid 1 0 7 1 : solenoid valve 1071a : storage tank 107 1b : storage tank -57- 200827949 1 072 : spray nozzle 1 073 : pump 1 074 : suction duct 1 0 7 5: recovery tank 1 076 : recovery conduit 1541 : contact hole 1 5 5 1 : full exposure photoresist φ 1 5 5 1 a : upper photoresist 1 5 5 1 b : lower photoresist 1 552 : mesh exposure photoresist 1 5 5 3 : Re-formation of photoresist 1 5 5 4 : Undercut 1 6 1 1 : Conductor film 1 6 1 2 : Photoreceptor electrode 1 7 1 1 : Solenoid valve • 1 7 1 2 : Solenoid valve 1 7 6 1 : Solenoid valve 1 7 6 2 : Solenoid valve 2007 : Stripping device 2 0 1 0 : Glass substrate 2 021 : Gate wiring 2022 : Gate electrode 2023 : Gate insulating film 203 1 : Power wiring - 58 200827949 2032 : Power supply electrode 2033 : Electrode thin film 2042: drain electrode 2050: thin film transistor 205 1 : channel portion 2052 : amorphous germanium film 205 3 : n-type amorphous germanium film _ 2054 : protective insulating film 2 0 5 5 : photoresist 2056 : opening portion 2070: Stripping solution 2072: Spray nozzle 2073: Pump 2074: Suction tube 2 5 4 1 : Contact hole • 2 5 5 1 : Full exposure photoresist 2 5 5 1 a : Upper layer photoresist 2551b: Lower layer photoresist 2 5 5 2: mesh exposure photoresist 2 5 5 3 : re-formation of photoresist 2 5 54 : undercut 2611 : conductor film 2 6 1 2 : pixel electrode 2711 : guide bow | plate - 59-

Claims (1)

200827949 十、申請專利範園 1 ·一種剝膜組成物，其爲使用於半導體裝置之製造， 溶解於光阻，剝離層合於該光阻上的導電體膜之剝膜組成 物， 其特徵爲該剝膜組成物爲含有20〜79.5重量％之胺系 化合物、20〜79.5重量％之非質子性極性化合物、與0.5 〜5重量％之碳系化合物。 • 2 ·如申請專利範圍第1項之剝膜組成物，其中該胺系 化合物爲含有至少1種選自單乙醇胺、單異丙醇胺、甲基 甲醇胺、乙基乙醇胺、二甲醇胺 '胺基乙氧基乙醇胺、二 乙醇胺及這些組合所成群之化合物。 3 ·如申請專利範圍第1項或第2項之剝膜組成物，其 中該非質子性極性化合物爲含有至少1種選自N-甲基-2-吡咯烷酮、N，N_二甲基乙醯胺、N，N-二甲基甲醯胺、Ν，Ν· 二甲基咪唑、二甲基亞颯、及這些組合所成群之化合物。 • 4.一種剝膜組成物，其爲使用於半導體裝置之製造， 溶解於光阻，剝離層合於該光阻上的導電體膜之剝膜組成 .物， 其特徵爲該剝膜組成物爲含有碳酸乙烯酯、與0.5〜5 重量％的碳系化合物。 5.—種剝膜組成物，其爲使用於半導體裝置之製造， 溶解於光阻，剝離層合於該光阻上的導電體膜之剝膜組成 物， 其特徵爲該剝膜組成物爲含有烷氧基丙烯醯胺化合物 -60- 200827949 、與〇 · 5〜5重量％的碳系化合物。 6 ·如申請專利範圍第5項之剝膜組成物，其中該烷氧 基丙烯醯胺爲含有至少1種選自下述一般式1所示化合物 、及這些組合所成群之化合物； [化5] 〇 (-般式1) R1-0-CH2CH2-C-NR2R3200827949 X. Patent application 1 1. A film-forming composition which is used in the manufacture of a semiconductor device, is dissolved in a photoresist, and is peeled off from a film of a conductor film laminated on the photoresist, and is characterized by The film-forming composition is an amine-based compound containing 20 to 79.5 % by weight, an aprotic polar compound of 20 to 79.5% by weight, and a carbon-based compound of 0.5 to 5% by weight. 2. The film-forming composition of claim 1, wherein the amine-based compound contains at least one selected from the group consisting of monoethanolamine, monoisopropanolamine, methylmethanolamine, ethylethanolamine, dimethanolamine Aminoethoxyethanolamine, diethanolamine, and a combination of these compounds. 3. The film-forming composition according to claim 1 or 2, wherein the aprotic polar compound contains at least one selected from the group consisting of N-methyl-2-pyrrolidone and N,N-dimethylacetamidine. Amine, N,N-dimethylformamide, hydrazine, hydrazine dimethylimidazole, dimethyl hydrazine, and a combination of these compounds. 4. A film-forming composition which is used in the manufacture of a semiconductor device, dissolved in a photoresist, and peeled off a film of a conductor film laminated on the photoresist, characterized by the film-forming composition It is a carbon-based compound containing ethylene carbonate and 0.5 to 5% by weight. 5. A film-forming composition for use in the manufacture of a semiconductor device, dissolved in a photoresist, and stripped of a film of a conductor film laminated on the photoresist, characterized in that the film-forming composition is A carbon-based compound containing an alkoxy acrylamide compound -60-200827949 and 5% 55% by weight. 6. The film-forming composition of claim 5, wherein the alkoxy acrylamide is a compound containing at least one compound selected from the following general formula 1 and a group of these combinations; 5] 〇 (-General 1) R1-0-CH2CH2-C-NR2R3 其中，Rl、R2、R3各獨立顯示碳數1至10的烷基。 7·如申請專利範圍第1項至第6項中任一項之剝膜組 成物，該碳系化合物爲含有至少1種選自下述一般式2、3 所示羧酸、及這些組合所成群之化合物； R-COOH ( 一般式 2) 其中，R爲碳數1至10的烷基、芳基； HOCO-R-COOH (―般式 3) 其中，R爲碳數1至10的烷基、芳基。 8·如申請專利範圍第1項至第7項中任一項之剝膜組 成物，其爲使該碳系化合物的pKa (酸解離常數）爲4.0 以上5.2以下。 9·一種TFT基板的製造方法，其特徵爲具有 於基板上形成薄膜電晶體之步驟、 於該基板及薄膜電晶體上層合保護用絕緣膜之步驟、 於該保護用絕緣膜上層合光阻的之步驟、 將該光阻形成爲所定形狀，於該光阻的周緣下部形成 200827949 咬邊（undercut)部之步驟、 於該保護用絕緣膜及光阻上蒸鍍導電性物質，形成^藉 由該咬邊部彼此被分離之畫素電極及光阻上的導電體膜之 步驟、與 該基板上供給如申請專利範圍第1項至第8項中任一 項剝膜組成物，將該光阻上的導電體膜自該基板剝離之剝 膜步驟。 φ 10.如申請專利範圍第9項之TFT基板的製造方法， 其中具有回收含有自該基板所剝離的光阻上之導電體膜的 使用過之剝膜組成物，將該光阻上的導電體膜溶解於該使 用過之剝膜組成物內，再利用該使用過之剝膜組成物之回 收步驟。 U.如申請專利範圍第10項之TFT基板的製造方法， 其爲使供給於該基板的剝膜組成物之溫度爲3 0°C以上未達 60 °C，使該經回收的使用過之剝膜組成物之溫度爲60 °C以 © 上未達1 0 0 °C。 12. 如申請專利範圍第9項至第11項中任一項之TFT 基板的製造方法，其中該畫素電極及光阻上的導電體膜爲 含有至少1種選自氧化銦•氧化鋅（IZO )、氧化銦•氧 化錫·氧化鋅（ITZO )、氧化錫·氧化鋅（ZTO )、及這 些組合所成群之物質。 13. —種TFT基板的製造方法，其特徵爲具有 於基板上形成薄膜電晶體之步驟、 於該基板及薄膜電晶體上層合保護用絕緣膜之步驟、 -62- 200827949 於該保護用絕緣膜上層合光阻的之步驟、 將該光阻形成爲所定形狀，於-該-光阻的周緣下部形成 咬邊（undercut )部之步驟、 於該保護用絕緣膜及光阻上蒸鍍導電性物質，形成藉 由該咬邊部彼此被分離之畫素電極及光阻上的導電體膜之 步驟、與 該基板上供給剝膜組成物，將該光阻上的導電體膜自 • 該基板剝離之剝膜步驟、與 自含有自該基板所剝離的光阻上之導電體膜的使用過 之剝膜組成物，分離該光阻上的導電體膜，再利用該使用 過之剝膜組成物之回收步驟。 14.一種TFT基板的製造方法，其爲具有 於基板上形成薄膜電晶體之步驟、 於該基板及薄膜電晶體上層合保護用絕緣膜之步驟、 於該保護用絕緣膜上層合光阻的之步驟、 ® 將該光阻形成爲所定形狀，於該光阻的周緣下部形成 咬邊（undercut)部之步驟、 於該保護用絕緣膜及光阻上蒸鍍導電性物質，形成藉 由該咬邊部彼此被分離之畫素電極及光阻上的導電體膜之 步驟、與 該基板上供給剝膜組成物，將該光阻上的導電體膜自 該基板剝離之剝膜步驟的TFT基板的製造方法，其特徵爲 該剝膜組成物含有20〜80重量％的胺系化合物、20〜 80重量％的非質子性極性化合物。 -63- 200827949 1 5 ·如申請專利範圍第14項之TFT基板的製造方法， 其中該胺系化合物爲含有至少1種選自單乙醇胺、單異丙 醇胺、甲基甲醇胺、乙基乙醇胺、二甲醇胺、胺基乙氧基 乙醇胺、二乙醇胺及這些組合所成群之化合物。 1 6 ·如申請專利範圍第1 4項或第1 5項之TFT基板的 製造方法，其中該非質子性極性化合物爲含有至少1種選 自N -甲基-2-吡咯烷酮、N，N-二甲基乙醯胺、N，N-二甲基 ® 甲醯胺、N，N-二甲基咪唑、二甲基亞颯、及這些組合所成 群之化合物。 17·—種TFT基板的製造方法，其爲具有 於基板上形成薄膜電晶體之步驟、 於該基板及薄膜電晶體上層合保護用絕緣膜之步驟、 於該保護用絕緣膜上層合光阻的之步驟、 將該光阻形成爲所定形狀，於該光阻的周緣下部形成 咬邊（undercut)部之步驟、 ® 於該保護用絕緣膜及光阻上蒸鍍導電性物質，形成藉 由該咬邊部彼此被分離之畫素電極及光阻上的導電體膜之 步驟、與 該基板上供給剝膜組成物，將該光阻上的導電體膜自 該基板剝離之剝膜步驟之TFT基板的製造方法，其特徵爲 該剝膜組成物爲含有下述一般式1所示烷氧基丙烯醯 胺化合物； - 64- 200827949 [化6] Ο II R1 - Ο - CH2CH2 - C - NR2R3 (一般式 1) 其中，Rl、R2、R3各獨立爲碳數1至ι〇的烷基。 18.—種TFT基板的製造方法，其爲具有 於基板上形成薄膜電晶體之步驟、 ® 於該基板及薄膜電晶體上層合保護用絕緣膜之步驟、 於該保護用絕緣膜上層合光阻的之步驟、 將該光阻形成爲所疋形狀，於該光阻的周緣下部形成 咬邊（undercut)部之步驟、 於該保護用絕緣膜及光阻上蒸鍍導電性物質，形成藉 由該咬邊部彼此被分離之畫素電極及光阻上的導電體膜之 步驟、與 該基板上供給剝膜組成物，將該光阻上的導電體膜自 胃該基板剝離之剝膜步驟之TFT基板的製造方法，其特徵爲 該剝膜組成物爲含有碳酸乙烯酯。 1 9·如申請專利範圍第14項至第1 8項中任一項之TFT 基板的製造方法，其中具有自含有自該基板所剝離的光阻 上之導電體膜的使用過之剝膜組成物，分離該光阻上的導 m體膜，再利用該使用過之剝膜組成物之回收步驟。 20·如申請專利範圍第13項或第19項之TFT基板的 方法’其爲藉由沈澱式分離、離心式分離、及/或過 濾、Θ 3離’自該使用過的剝膜組成物分離該光阻上的導電 -65- 200827949 體膜。 21 ·如申請專利範圍第13項至第20項中任一項之TFT 基板的製造方法，其中該導電體膜爲含有至少1種選自氧 化銦·氧化鋅（IZ0 )、氧化銦•氧化錫（IT〇 )、非晶體 氧化銦•氧化錫（a-ΙΤΟ )、氧化鈦·氧化鈮、氧化錫· 氧化鋅、氧化錫·氧化銻、摻氟氧化錫、及這些組合所成 群之物質。 ® 2 2 ·如申請專利範圍第9項至第21項中任一項之T F T 基板的製造方法，其中該剝膜步驟中，該剝膜組成物藉由 噴霧方式供給於該基板上。 23·如申請專利範圍第9項至第22項中任一項之TFT 基板的製造方法，其中該光阻的下層部對於顯像液之溶解 性比該光阻的上層部還高。 24·—種剝膜組成物的回收方法，其特徵爲具有 於基板上形成薄膜電晶體之步驟、 ® 於該基板及薄膜電晶體上層合保護用絕緣膜之步驟、 於該保護用絕緣膜上層合光阻的之步驟、 將該光阻形成爲所定形狀，於該光阻的周緣下部形成 咬邊（undercut )部之步驟、 於該保護用絕緣膜及光阻上蒸鍍導電性物質，形成藉 由該咬邊部彼此被分離之畫素電極及光阻上的導電體膜之 步驟、 該基板上供給如申請專利範圍第1項至第8項中任一 項之剝膜組成物，將該光阻上的導電體膜自該基板剝離之 -66- 200827949 剝膜步驟、與 回收含有自該基板所剝離的光阻上之導電體膜的使用 過之剝膜組成物，將該光阻上的導電體膜溶解於該使用過 的剝膜組成物內，再利用該使用過之剝膜組成物之回收步 驟。 25. —種剝膜組成物的回收方法，其特徵爲具有 於基板上形成薄膜電晶體之步驟、 • 於該基板及薄膜電晶體上層合保護用絕緣膜之步驟、 於該保護用絕緣膜上層合光阻的之步驟、 將該光阻形成爲所定形狀，於該光阻的周緣下部形成 咬邊（undercut )部之步驟、 於該保護用絕緣膜及光阻上蒸鍍導電性物質，形成藉 由該咬邊部彼此被分離之畫素電極及光阻上的導電體膜之 步驟、 該基板上供給剝膜組成物，將該光阻上的導電體膜自 0 該基板剝離之剝膜步驟、與 自含有自該基板所剝離的光阻上之導電體膜的使用過 之剝膜組成物分離該光阻上的導電體膜，再利用該使用過 之剝膜組成物之回收步驟。 -67-Wherein R1, R2, and R3 each independently exhibit an alkyl group having 1 to 10 carbon atoms. The film-forming composition according to any one of claims 1 to 6, wherein the carbon-based compound contains at least one carboxylic acid selected from the following general formulas 2 and 3, and combinations thereof a group of compounds; R-COOH (general formula 2) wherein R is an alkyl group or an aryl group having 1 to 10 carbon atoms; HOCO-R-COOH ("Formula 3" wherein R is a carbon number of 1 to 10 Alkyl, aryl. The stripping composition according to any one of claims 1 to 7, wherein the carbon compound has a pKa (acid dissociation constant) of 4.0 or more and 5.2 or less. 9. A method of manufacturing a TFT substrate, comprising the steps of: forming a thin film transistor on a substrate; laminating a protective insulating film on the substrate and the thin film transistor; and laminating a photoresist on the protective insulating film. a step of forming the photoresist into a predetermined shape, forming a 200827949 undercut portion on a lower portion of the periphery of the photoresist, and depositing a conductive material on the protective insulating film and the photoresist to form a photoresist a step of supplying the photoreceptor electrode and the electroconductive film on the photoresist, wherein the undercut portion is separated from each other, and the film is supplied to the substrate as disclosed in any one of claims 1 to 8 A stripping step of the resistive film peeled off from the substrate. Φ 10. The method for producing a TFT substrate according to claim 9, wherein the used stripping film composition for recovering the electroconductive film containing the photoresist peeled off from the substrate, the conductive film on the photoresist The body membrane is dissolved in the used stripping film composition, and the recycling step of the used stripping film composition is utilized. U. The method for producing a TFT substrate according to claim 10, wherein the recycled film composition is supplied at a temperature of 30 ° C or more and less than 60 ° C. The temperature of the stripping composition was 60 °C to less than 100 °C on ©. 12. The method of manufacturing a TFT substrate according to any one of claims 9 to 11, wherein the pixel electrode and the conductor film on the photoresist are at least one selected from the group consisting of indium oxide and zinc oxide ( IZO), indium oxide, tin oxide, zinc oxide (ITZO), tin oxide, zinc oxide (ZTO), and a combination of these components. 13. A method of manufacturing a TFT substrate, comprising the steps of: forming a thin film transistor on a substrate; and laminating a protective insulating film on the substrate and the thin film transistor, -62-200827949 in the protective insulating film a step of forming a photoresist on the upper layer, forming the photoresist into a predetermined shape, forming an undercut portion on a lower portion of the periphery of the photoresist, and depositing conductivity on the protective insulating film and the photoresist a substance, a step of forming a pixel electrode separated from each other by the undercut portion, and a conductive film on the photoresist, and a film-forming composition on the substrate, and the conductive film on the photoresist is applied to the substrate a stripping step of stripping, and a used stripping film composition of the conductor film on the photoresist stripped from the substrate, separating the conductor film on the photoresist, and using the used stripping film composition The recycling step of the object. A method of producing a TFT substrate, comprising the steps of forming a thin film transistor on a substrate, laminating a protective insulating film on the substrate and the thin film transistor, and laminating the photoresist on the protective insulating film. Step, the step of forming the photoresist into a predetermined shape, forming an undercut portion on a lower portion of the periphery of the photoresist, and depositing a conductive material on the protective insulating film and the photoresist to form a bite by the bite a step of separating a pixel electrode on the side of the pixel electrode and the photoresist film on the photoresist, and a TFT substrate on the substrate, which is provided with a stripping film composition, and the conductor film on the photoresist is peeled off from the substrate The production method is characterized in that the film-forming composition contains 20 to 80% by weight of an amine compound and 20 to 80% by weight of an aprotic polar compound. The method for producing a TFT substrate according to claim 14, wherein the amine compound contains at least one selected from the group consisting of monoethanolamine, monoisopropanolamine, methylmethanolamine, and ethylethanolamine. Dimethanolamine, aminoethoxyethanolamine, diethanolamine, and a combination of these compounds. The method for producing a TFT substrate according to claim 14 or claim 15, wherein the aprotic polar compound contains at least one selected from the group consisting of N-methyl-2-pyrrolidone and N,N-di Methylacetamide, N,N-dimethyl® formamide, N,N-dimethylimidazole, dimethylhydrazine, and a combination of these compounds. A method for producing a TFT substrate, comprising the steps of forming a thin film transistor on a substrate, laminating a protective insulating film on the substrate and the thin film transistor, and laminating the photoresist on the protective insulating film; a step of forming the photoresist into a predetermined shape, forming an undercut portion on a lower portion of the periphery of the photoresist, and depositing a conductive material on the protective insulating film and the photoresist to form a photoresist a step of a stripping step on which the photoreceptor electrode and the conductor film on the photoresist are separated from each other, and a stripping step in which the conductor film on the substrate is peeled off from the substrate A method for producing a substrate, characterized in that the film-forming composition is an alkoxypropenylamine compound having the following general formula 1:; 64-200827949 [Chem. 6] Ο II R1 - Ο - CH2CH2 - C - NR2R3 ( In general, 1), R1, R2, and R3 are each independently an alkyl group having 1 to 〇. 18. A method of producing a TFT substrate, comprising the steps of: forming a thin film transistor on a substrate; and laminating a protective insulating film on the substrate and the thin film transistor; and laminating the photoresist on the protective insulating film. a step of forming the photoresist into a shape of a crucible, forming an undercut portion on a lower portion of the periphery of the photoresist, and depositing a conductive material on the protective insulating film and the photoresist to form a step of separating the photoreceptor electrode and the conductor film on the photoresist from the undercut portion, and a film stripping step of supplying the stripping film on the substrate and stripping the conductor film on the photoresist from the substrate A method of producing a TFT substrate, characterized in that the film-forming composition contains ethylene carbonate. The method of manufacturing a TFT substrate according to any one of claims 14 to 18, wherein the method comprises the use of a stripping film of a conductor film on a photoresist stripped from the substrate. And separating the conductive film on the photoresist, and then using the recycling step of the used stripping composition. 20. A method of applying a TFT substrate according to item 13 or item 19 of the patent scope, which is by means of precipitation separation, centrifugal separation, and/or filtration, separation from the used stripping composition. Conductive on the photoresist -65-200827949 body film. The method of manufacturing a TFT substrate according to any one of claims 13 to 20, wherein the conductor film contains at least one selected from the group consisting of indium oxide, zinc oxide (IZ0), indium oxide, and tin oxide. (IT〇), amorphous indium oxide, tin oxide (a-tellurium), titanium oxide, antimony oxide, tin oxide, zinc oxide, tin oxide, antimony oxide, fluorine-doped tin oxide, and a combination thereof. The method for producing a T F T substrate according to any one of claims 9 to 21, wherein in the stripping step, the stripping composition is supplied onto the substrate by spraying. The method of manufacturing a TFT substrate according to any one of claims 9 to 22, wherein the lower portion of the photoresist is higher in solubility to the developing liquid than the upper portion of the photoresist. A method for recovering a stripping film composition, comprising the steps of: forming a thin film transistor on a substrate; and laminating a protective insulating film on the substrate and the thin film transistor, and upper layer of the protective insulating film a step of combining the photoresist, forming the photoresist into a predetermined shape, forming an undercut portion on a lower portion of the periphery of the photoresist, and depositing a conductive material on the protective insulating film and the photoresist to form a photoresist The step of supplying the pixel electrode on the photoreceptor electrode and the photoresist film on the photoresist by the undercut portion, and supplying the film-forming composition according to any one of claims 1 to 8 on the substrate, a stripping step of the conductive film on the photoresist from the substrate - 66 - 200827949, and a used stripping film composition for recovering the conductor film on the photoresist stripped from the substrate, the photoresist is removed The upper conductor film is dissolved in the used film-forming composition, and the recycling step of the used film-forming composition is utilized. 25. A method for recovering a stripping film composition, comprising the steps of: forming a thin film transistor on a substrate; and laminating a protective insulating film on the substrate and the thin film transistor; and forming an upper layer of the protective insulating film a step of combining the photoresist, forming the photoresist into a predetermined shape, forming an undercut portion on a lower portion of the periphery of the photoresist, and depositing a conductive material on the protective insulating film and the photoresist to form a photoresist a step of supplying a stripping film on the substrate by the pixel electrode on which the undercut portion is separated from each other and the conductive film on the photoresist, and peeling off the conductive film on the photoresist from the substrate The step of separating the conductor film on the photoresist from the used stripping film composition of the conductor film on the photoresist stripped from the substrate, and using the recycling step of the used stripping film composition. -67-
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