200823272 UMCD-2006-0419 21842twf.d〇c/t 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種用於砂布式化學機械研磨製程 的溶液及砂布式化學機械研磨法，且特別是有關於一種能 提升研磨選擇比與移除率之用於砂布式化學機械研磨製程 的溶液及砂布式化學機械研磨法。 【先前技術】 # 在記憶體晶圓（mem〇ry wafer)或邏輯晶圓（i〇gic wafer) 等半導體元件的製作中，為了提高電子元件的積集度以及 降低生產成本，所以近來在製程上有逐漸提高深寬比 (aspect ratio)且增加導線層（conductive circuit layer)之堆疊 層數的趨勢。不過；在製作此多層導線層結構時，隨著堆 豐層數的增加，於晶片表面所產生之凹凸或扭曲等不平坦 的現象會日益顯著，因此能在製程中消除晶圓表面之不平 坦並達到所謂之完全平坦化(global planarity)的技術係成 為眾所矚目的焦點。使用此完全平坦化技術不但可以在元 件上使用多層之導線結構，而且還能確保所製得之元件的 ★ 良率。最早提出完全平坦化的技術是美國：[BM公司，其利 - 用完全平坦化技術之一的化學機械研磨法（chemical mechanical polishing，CMP)來進行埋入式導線之間金屬鑲 嵌(damascene)製程。在化學機械研磨的過程中，其係藉由 研磨粒子(abrasive particle)以及具有適當的彈性(eiastieity) 與硬度(hardness)的之研磨墊，在晶圓表面彼此進行相對運 動以達成平坦化的目的。 4 200823272 UMCD-2006-0419 21842twf. doc/t 然而，利用具有研磨粒之研磨液來進行淺溝渠隔離區 (shallow treiieh —n，STI)之化學機械研磨以去除主動 區之氮财上的氧切時，會於氧切表面產生碟陷 (dishing)，且此雜縣至今—結法獲得解^因此，200823272 UMCD-2006-0419 21842twf.d〇c/t IX. Description of the Invention: [Technical Field] The present invention relates to a solution and abrasive cloth chemical mechanical polishing method for an abrasive cloth chemical mechanical polishing process, and In particular, there is a solution and abrasive cloth chemical mechanical polishing method for an abrasive cloth chemical mechanical polishing process which can improve the grinding selection ratio and removal rate. [Prior Art] # In the fabrication of semiconductor devices such as memory wafers or logic wafers, in order to improve the integration of electronic components and reduce production costs, There is a tendency to gradually increase the aspect ratio and increase the number of stacked layers of the conductive circuit layer. However, in the fabrication of the multilayer wiring layer structure, as the number of layers of the stack increases, unevenness such as unevenness or distortion generated on the surface of the wafer becomes more and more remarkable, so that the unevenness of the wafer surface can be eliminated in the process. And the technology that has reached the so-called global planarity has become the focus of attention. Using this full planarization technique not only allows the use of multiple layers of wire structures on the components, but also ensures the yield of the fabricated components. The first technology to propose complete flattening was in the United States: [BM Corporation, its benefit - using a chemical mechanical polishing (CMP), one of the fully planarization techniques, to perform a damascene process between buried conductors. . In the process of chemical mechanical polishing, the abrasive particles and the polishing pad with appropriate elasticity and hardness are used to move relative to each other on the surface of the wafer to achieve planarization. . 4 200823272 UMCD-2006-0419 21842twf. doc/t However, the use of abrasives with abrasive particles for the chemical mechanical grinding of shallow trench isolation regions (shallow treiieh-n, STI) to remove the oxygen cut from the active region At the time, a dishing will occur on the surface of the oxygen cut, and this miscellaneous county has so far obtained a solution. Therefore,
近來較常採用的方式係為-種不需研磨液之化學機械研 磨’此方法稱為砂布式化學機械研磨師㈣ CMP，簡SFA-CMP)’其係將研磨粒固定於研磨塾中，音 即使研磨墊如砂布(或砂.紙)_般具有研磨顆粒因此具有研 磨的功能’此方法的優_具錄切龍切之選擇 比’且其平坦化效率(Planarizati()neffieiency)佳，而且可以 有效降低淺溝渠内氧化矽發生碟陷的現象。 為了能進-歩地縮短產品生產週期，必須尋求能有效 地提升研磨縫比與轉率的砂布々轉賊研磨法，以 減少研磨時間。 【發明内容】 有鑑於此，本發明的目的就是在提供-種用於砂布式 =學機械研磨製程的溶液，可以提升氧切 研 磨選擇比。 ^ 目㈣提供—似砂布认學機械研 磨法，能有效地提高移除率。 ^明kiH -則於砂布錢學機 包，護成r水解成分及水。健成分用以保^ 矽保護成分的濃度介於0 001重量％至10重量％之 間。水解成分用以水解氧切，且水解成分的濃度介於 5 200823272 UMCD-2006-0419 21842twf.doc/t 0·001重量％至10重量％之間。水的濃度介於8〇重量％至 99.998重量％之間。 ° 依照本發明的實施例所述，在上述之用於砂布式化學 機械研磨製程的溶液中，保護成分包括酯類。 依照本發明的實施例所述，在上述之用於砂布式化風 機械研磨製程的溶液中，酯類包括左旋脯氨酸 依照本發明的實施例所述，在上述之用於砂布式化風 機械研磨製程的溶液中，水解成分包括界面活性劑=予 依照本發明的實施例所述，在上述之用於砂 機械研磨製程的溶液中，界面活性劑包括氣代 (fluoroaliphatic p〇lymeric ester)。 月曰 依照本發明的實施例所述，在上述之用於砂 機械研磨製程的溶液中，更包括驗性成分。布式化予 依照本發明的實施例所述，在上述 依照本發_實關所述，在 用 機m磨製程的溶液中，_成分布々匕學 鈉或氫氧化銨。 化鉀、氫氧化 ^發明提出一種砂布式化學機 圓，晶圓包括有氧化石夕與氮化石夕。接著#田疋先提供晶 晶圓’研磨墊上具有岐於研磨墊上的，用研磨墊研磨 將用於砂布式化學機械研磨製程的、容夜：：研磨粒。然後， 液包括保護成分、水解成分及水。晶圓上，此溶 保4成分用以保護氮化 200823272 UMCD-2006-0419 21842twf.doc/t 矽’且保護成分的濃度介於〇 〇〇1重量％至 旦 水解成分動X水躲财，且水解成分 之間。 重量％至10重量％之間。水的濃度介於80重^1於0刪 重量％之間。 里/〇至99.998 依照本發明的實施例所述，在上述之 研磨料，贿献包括賴。 布式化學機械 . 依照本發明的實施例所述，在上述之砂右々心 研磨法中’醋類包括左旋脯氨酸。 布式化予機械 依照本發明的實施例所述，在上述 研磨法中，水解成分包括界面活性劑。布式化學機械 依照本發_實闕㈣，在上述 研磨法中，界面活性劑包括氟代脂肪族聚腊布式化¥機械 依照本發明的實施例所述，在上 I 研磨法中，更包括鹼性成分。 乂布式化孥機械 依照本發明的實施例所述 研磨法中，驗性成分將溶液_值^整之在；布式化學機械 依照本發明的實施例所述，在上 2之間。 研磨法中，祕成分包域減_、氫氧學機械 基於上述，由於本發明所据出]氧氧化錢。 研磨製程的溶液中，具有用 矽式化學機械 氦化石夕的研磨選擇比。值得—产：有;f也提升氧化石夕對 ㈣研磨選擇比提高，所:使=二=氧化雜化 也隨著提高。 吏传過度研磨製程的製程裕度 7 200823272 UMCD-2006-0419 21842twf.doc/t 由;化學機械研磨法中， 由於所加人的减巾含有保錢切的保 :氧=:水解成分，因此能提高移除率，以減少研磨時 間，進而細短產品的生產週期。 易懂為月之上述和其他目的、特徵和優點能更明顯 =下y文特舉錄實施例，並配合所_式，作詳細說 【實施方式】 萝程：2、夜5兄=ί發明所提出之用於砂布式化學機械研磨 二；保護成分、水解成分及水。此溶液用於 磨選擇:以中’可以提高氧化矽對氮化矽的研 過程以在進行砂布式化學鋪研磨製程的 夕’且保護成分的濃度例如是介於請1 至⑽重量交佳的濃度是介於纏重量％ 水㊉/間。保遽成分例如是左旋脯氨酸等酯類。 過程中用以在進行砂布式化學機械研磨製程的 重量％至1()w且水解成分的濃度例如是介於〇厕 至〇.〇5重以之是介於〇·，_ 面活性劑。 水解成为例如是氟代脂肪族聚脂等界 間。例如是介於80重量％至99,998重量％之 間水例如是作為溶劑使用。 在/合液中更可包括鹼性成分，用以調整溶液的 8 200823272 UMCD-2006-0419 21842twf.doc/t 酸鹼值。鹼性成分例如是氫氧化鉀、氫〆 驗性成分例如是將溶液的pH值調整在9至化= 的是將pH值調整在1〇至n之間。 s，較佳 由上述可知，在本發明所提出之用於 尺解乳化矽的水解成分，因此在進行 :程=’可《提升氧化雜氮化料研磨選研 提高’―度研 圖1所纷示為本發明之砂布式化學機械研磨法的流程 圖0 請參照圖i，首先進行步驟S100，先提供晶圓，晶圓 包括有氧化石夕與氮化石夕。 接著，進行步驟S102，使用研磨墊研磨晶圓，研磨墊 上具有固定於研磨墊上的多個研磨粒。其中，使用研磨墊 =磨晶圓例如是先使晶圓表面與研磨墊表面進行接觸，再 讓晶圓與研磨墊彼此進行相對運動而進行研磨。 ,然後，請參照步驟S104，將用於砂布式化學機械研磨 製程的溶液加到晶圓上，此溶液包括保護成分、水解成分 及水。此外，用於砂布式化學機械研磨製程的溶液中更可 包括驗性成分。此用於砂布式化學機械研磨製程的溶液中 各組成成分的濃度及作用於上文已進行詳細說明，故於此 不再贅述。 本兔明所提出的砂布式化學機械研磨法適用於研磨 200823272 UMCD-2006-0419 21842twf.doc/t 具有氧化矽與氮化矽的晶圓D以下，以利用本發明的砂布 式化學機械研磨法製作淺溝渠隔離結構為例進行說明。 圖2A至圖2C所繪示為本發明一實施例之淺溝渠隔離 結構的製造流程剖面圖。Recently, the more commonly used method is chemical mechanical polishing without polishing liquid. This method is called abrasive cloth chemical mechanical grinder (4) CMP, Jane SFA-CMP), which fixes the abrasive particles in the grinding crucible. Even if the polishing pad has abrasive particles like abrasive cloth (or sandpaper), it has the function of grinding. This method has a better choice than the 'and its flattening efficiency (Planarizati() neffieiency), and It can effectively reduce the phenomenon of dishing of cerium oxide in shallow trenches. In order to shorten the product production cycle, it is necessary to find a sanding cloth thief grinding method that can effectively increase the ratio and rotation rate of the grinding joint to reduce the grinding time. SUMMARY OF THE INVENTION In view of the above, an object of the present invention is to provide a solution for an abrasive cloth type mechanical polishing process which can improve the oxygen cutting grinding selection ratio. ^ Item (4) Provides - sandpaper-based mechanical grinding method, which can effectively improve the removal rate. ^ Ming kiH - in the sand cloth money machine package, protected into r hydrolysis components and water. The health component is used to protect the concentration of the protective component between 0001% and 10% by weight. The hydrolyzed component is used to hydrolyze oxygen cut, and the concentration of the hydrolyzed component is between 5 200823272 UMCD-2006-0419 21842twf.doc/t 0·001% by weight to 10% by weight. The concentration of water is between 8% and 99.998% by weight. ° According to an embodiment of the present invention, in the above solution for the abrasive cloth type chemical mechanical polishing process, the protective component includes an ester. In accordance with an embodiment of the present invention, in the above-described solution for an abrasive cloth mechanical wind polishing process, the esters include L-proline as described in the examples of the present invention, and are used in the above-mentioned abrasive cloth style winds. In the solution of the mechanical polishing process, the hydrolyzed component includes a surfactant = according to the embodiment of the present invention, in the above solution for the sand mechanical polishing process, the surfactant includes fluoroaliphatic p〇lymeric ester . In accordance with an embodiment of the present invention, in the above-described solution for a sand mechanical polishing process, an inspective component is further included. Layout According to the embodiment of the present invention, in the above-described solution according to the present invention, in the solution of the machine m grinding process, _ is distributed with sodium or ammonium hydroxide. Potassium, Hydroxide The invention proposes an abrasive cloth chemical machine circle, which includes oxidized stone and nitrite. Next, #田疋 first provides a wafer. The polishing pad has a polishing pad on the polishing pad. It is ground with a polishing pad. It is used for the abrasive-type chemical mechanical polishing process. Then, the liquid includes a protective component, a hydrolyzed component, and water. On the wafer, this solvent 4 component is used to protect nitriding 200823272 UMCD-2006-0419 21842twf.doc/t 矽' and the concentration of the protective component is between 〇〇〇1% by weight and the hydrolyzed component is moved. And between the components of hydrolysis. Between wt% and 10% by weight. The concentration of water is between 80% and 1% by weight.里/〇至99.998 According to an embodiment of the present invention, in the above abrasive material, the bribe includes Lai. Cloth chemical machine. According to an embodiment of the present invention, the vinegar includes levoproline in the above-described sand right core grinding method. Clothing to Mechanical According to an embodiment of the present invention, in the above grinding method, the hydrolyzed component includes a surfactant. The cloth chemical machine is in accordance with the present invention. In the above grinding method, the surfactant comprises a fluoroaliphatic poly-wax fabric. According to the embodiment of the present invention, in the above-mentioned I grinding method, Includes alkaline ingredients.乂 孥 孥 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 依照 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 In the grinding method, the secret component is reduced by _, and the oxyhydrogen machine is based on the above, and the oxygen is oxidized by the present invention. In the solution of the polishing process, there is a grinding selection ratio using a bismuth chemical mechanical bismuth fossil. It is worthwhile to produce: there is; f also raises the oxidized stone eve (4) the grinding selection ratio is improved, so: ==== oxidative hybridization also increases. Process margin for rumored over-grinding process 7 200823272 UMCD-2006-0419 21842twf.doc/t By chemical mechanical grinding method, since the added towel contains a guaranteed cut: oxygen =: hydrolyzed component, therefore It can increase the removal rate to reduce the grinding time and thus the production cycle of the product. It is easy to understand that the above and other purposes, features and advantages of the month can be more obvious. = The following examples are given, and in conjunction with the formula, the details are described. [Embodiment] Luo Cheng: 2, night 5 brother = ί invention The proposed abrasive-type chemical mechanical polishing 2; protective components, hydrolysis components and water. This solution is used for grinding selection: in the middle of 'can improve the process of yttrium oxide on the tantalum nitride to perform the abrasive cloth chemical polishing process and the concentration of the protective component is, for example, between 1 and (10) The concentration is between the weight of the water and the water. The herbicide component is, for example, an ester such as L-valine. The concentration used in the abrasive CMP process is from 1% to 1%, and the concentration of the hydrolyzed component is, for example, between 〇 〇 and 〇. 〇 5 is the 〇·, _ surfactant. Hydrolysis is, for example, a boundary between fluoroaliphatic polyesters. For example, water between 80% by weight and 99,998% by weight is used, for example, as a solvent. An alkaline component may be further included in the liquid mixture to adjust the pH value of the solution 8 200823272 UMCD-2006-0419 21842 twf.doc/t. The alkaline component is, for example, potassium hydroxide or a hydroquinone component, for example, the pH of the solution is adjusted to 9 to = the pH is adjusted between 1 Torr and n. s, preferably, as described above, in the present invention, the hydrolyzed component for the emulsified hydrazine is subjected to the following steps: "Processing = 'can improve the oxidized hetero-nitride grinding and improving the selection" Flowchart of the abrasive cloth type chemical mechanical polishing method according to the present invention. Referring to FIG. 1, first, step S100 is performed to first provide a wafer including an oxide oxide and a nitride. Next, in step S102, the wafer is polished using a polishing pad having a plurality of abrasive grains fixed to the polishing pad. Among them, the polishing pad is used. For example, the wafer surface is first brought into contact with the surface of the polishing pad, and then the wafer and the polishing pad are moved relative to each other to be polished. Then, referring to step S104, a solution for the abrasive cloth chemical mechanical polishing process is applied to the wafer, and the solution includes a protective component, a hydrolyzed component, and water. In addition, the solution for the abrasive cloth chemical mechanical polishing process may include an inspecting component. The concentration and action of each component in the solution for the abrasive cloth chemical mechanical polishing process have been described in detail above, and thus will not be described herein. The abrasive cloth chemical mechanical polishing method proposed by the present invention is suitable for grinding 200823272 UMCD-2006-0419 21842twf.doc/t wafer D having yttrium oxide and tantalum nitride to utilize the abrasive cloth chemical mechanical polishing method of the present invention. An example of making a shallow trench isolation structure is described. 2A to 2C are cross-sectional views showing a manufacturing process of a shallow trench isolation structure according to an embodiment of the present invention.
首先，請參照圖2A，提供基底1〇〇，基底1〇〇上已形 成有圖案化氮化矽層1〇4,而基底100中已形成有溝渠 106 ’且圖案化氮化矽層1〇4暴露出溝渠1〇6。基底！㈨例 如是矽基底。圖案化氮化矽層1〇4的形成方法例如是在基 底100上形成氮化矽材料層（未繪示)之後，對氮化矽材料 層進行微影製程及㈣製程而形成之。溝渠1()6的形成方 法例如是以圖案化氮化韻刚為罩¥，對基底⑽ 蝕刻製程而形成之。 此外於形成圖案化氮化石夕層1〇4之前，可選擇性地 於基底100上形成墊氧化層1〇2，能避免圖案化氮化石夕層 100上產生應力，且可以增加氮化石夕層m盘 =化法之間的黏著力。塾氧化層102的形成方法例如是 接著，於圖案化氮化石夕層104上 且氧㈣層⑽填滿溝渠伽。氧化料⑽的ί成方法 例如是化學氣相沈積法。 成方法 、、冓準=以圖2Β，以砂布式化學機械研磨法移除 層⑽。砂直至暴露_化氣化石夕 粒的研磨墊研磨晶;是使用具有咖 ® i且將本判之崎砂布式化學機 10 200823272 UMCD-2006-0419 21842twf.doc/t 械研磨製程的溶液加到基底⑽上。此用於砂 械=磨製程的溶液中各組成成分的濃度及作匕子機 行詳細說明，故於此不再贅述。 ；文已進 接下來，明參照圖2C ,依序移除圖宰化_ 與墊氧彳w· 1G6 ⑽ =圖案化氮化細4與塾氧化層 如疋使用濕式蝕刻法依序移除。 私除方法例 法^㈣之砂恤學機械研磨 :保護成分及用以水解氧化二===， =上^^本發明至少具有下列優點： 的溶液可以用::布式化學機械研磨製程 2.本發明所提出之用；磨選擇比。 液由於提高了氧化石夕對氮化二布式化學機械研磨製程的溶 過度研磨製程的製程裕度也隨選擇比’因此能使得 3·由於本發明所提出‘疋同。 移除率，因此可以減少=式化學機械研磨法具有高 期。 j ^間，進而縮短產品的生產週 【圖式簡單說明】 圖1所繪示為本發明、， 圖。 布式化學機械研磨法的流程 200823272 UMCD-2006-0419 21842twf.doc/t 圖2A至圖2C所繪示為本發明一實施例之淺溝渠隔離 結構的製造流程剖面圖。 【主要元件符號說明】 100 :基底 102 塾氧化層 104 106 • 108 108, 圖案化氮化矽層 溝渠 :氧化矽層 :淺溝渠隔離結構 S100、S102、S104 :步驟標號 12First, referring to FIG. 2A, a substrate 1 is provided, on which a patterned tantalum nitride layer 1〇4 has been formed, and a trench 106' has been formed in the substrate 100 and a patterned tantalum nitride layer 1〇 4 exposed the trench 1〇6. Base! (9) For example, it is a base. The method for forming the patterned tantalum nitride layer 1〇4 is formed, for example, by forming a tantalum nitride material layer (not shown) on the substrate 100, and then performing a lithography process and a (4) process on the tantalum nitride material layer. The method of forming the trench 1 () 6 is formed, for example, by etching a substrate (10) by patterning a nitride. In addition, before the formation of the patterned nitride layer 1〇4, the pad oxide layer 1〇2 can be selectively formed on the substrate 100, which can avoid stress on the patterned nitride layer 100, and can increase the nitride layer. m disk = adhesion between the chemical methods. The method of forming the tantalum oxide layer 102 is, for example, followed by patterning the nitride layer 104 and filling the trenches with the oxygen (tetra) layer (10). The method of forming the oxidizing agent (10) is, for example, a chemical vapor deposition method. Forming method, 冓 = = Figure 2 Β, remove the layer (10) by abrasive CMP. The sand is polished until the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ On the substrate (10). The concentration of each component in the solution for the sanding-grinding process is described in detail as a tweezers machine, and therefore will not be described again. The text has proceeded to the next, with reference to Figure 2C, sequentially removing the graph _ _ with pad 彳 w · 1G6 (10) = patterned nitride fine 4 and bismuth oxide layer such as 疋 using wet etching method to remove sequentially . Private method example ^ (4) sand-shirt mechanical grinding: protective components and used to hydrolyze oxidation two ===, = upper ^ ^ The invention has at least the following advantages: The solution can be used:: cloth chemical mechanical polishing process 2 The use of the present invention; grinding selection ratio. The process margin of the liquid over-grinding process due to the increased oxidization of the oxidized stone to the nitriding chemical mechanical polishing process also depends on the selection ratio, and thus can be made by the present invention. The removal rate, therefore, can reduce the high temperature of the chemical mechanical polishing method. Between j ^, and further shorten the production week of the product [Simplified description of the drawings] Figure 1 is a diagram of the present invention. Flow of the cloth chemical mechanical polishing method 200823272 UMCD-2006-0419 21842twf.doc/t FIG. 2A to FIG. 2C are cross-sectional views showing the manufacturing process of the shallow trench isolation structure according to an embodiment of the present invention. [Description of main component symbols] 100: Substrate 102 Antimony oxide layer 104 106 • 108 108, patterned tantalum nitride layer Ditch: Oxide layer: Shallow trench isolation structure S100, S102, S104: Step number 12