200822401 九、發明說明： 【發明所屬之技術領域】 本發明涉及一種按申請專利範圍第第1項引文所述的 半導體發光裝置和帶有這種半導體發光裝置的發光面板 (Leuchtpaneel ) 〇 【先前技術】 已知發光二極體（LED) _發光裝置形式的半導體發光 裝置，其中包含pn結的半導體晶體由不透光的底板支承。 半導體發光晶體向各個方向發射來自電子和空穴的重 組的光線。因此在已知半導體發光裝置中向後半空間發射 的光線大部分或完全損失。 【發明内容】 通過本發明應該這樣來改進按申請專利範圍第丨項引 文所述的半導體發光裝置，即，增大可用光的量。 按照本發明這個目的通過具有在申請專利範圍第丨項 中給出的特徵的半導體發光裝置來實現。 在按本發明的半導體發光裝置中，支承發光的半導體 發光元件的基體對於由半導體發光元件産生的光是可透過 的，因此向後發射的光沒有損失而是可以利用的，其中在 一些情況下設置在發光裝置後面的鏡子可以用來使=後發 射的光同樣到達前半空間。 本發明有利的改進方案在從屬申請專利範圍中給出。 在申請專利範圍f 2項中給出的用於支承半導體發光 元件的基體的材料不僅是透光的而且在體積内是清澈的， 5 200822401 因此基體不會導致光線散射。 在申請專利範圍第3項中給出的基體的特徵是特別高 的硬度和在大的波長範圍内良好的透光度。這種基體還具 有知·別好的化學（腐姓）耐抗性’因此可以在平版印刷方 法中用作底板/基片（Unterlage )。 在申請專利範圍第4項中給出的基體的厚度特性在基 月豆小的重里和低的成本方面是有利的。 如果在半導體發光元件中採用如申請專利範圍$中給 出的二層結構作爲光源，則輸入發光元件内的電能以特別 南的效率轉化成光，並可以控制光譜。 本發明按申請專利範圍第6至第8項的改進方案用來 使半導體發光元件中産生高的發光量。 在按申請專利範圍第9項的發光裝置中還可以將在半 導體發光元件内部産生的光輸送到使用部位。也可以通過 位於半導體發光元件後面的鏡將光線反射到前半空間。° —本發明按申請專利範圍第1〇項的改進方案允許，也可 以實現在空間上延展的發光裝置，特別是還可實現平面彤 的發光裝置。 / —本發明按巾請專利範圍第u項的改進方案在高的亮度 /光密度（Leuchtdichte)上是有利的。 這晨，對於半導體發光元件只是部分透光的或者是不 透光的ιή ’利用按中請專利範圍第12㉟的佈置結構可 :到高的亮度/光密度’其中對於兩組半導體發光元件，向 則和向後發出的光都得到利用。兩組半導體發光元件設置 200822401 在基體不同的側面上，這在半導體發光元件良好的散熱上 也是有利的。 在按申請專利範圍第13項的發光元件中，使基體連同 由它支承的半導體元件得到保護，而基本上不受外界的機 械影響的作用。 這裏’本發明按申請專利範圍第14項的改進方案在實 現平面的發光裝置方面也是有利的。 本奄明知：申清專利範圍第15項的改進方案在對半導體 發光元件進行良好冷卻的方面是有利的。 這裏按申請專利範圍第16項，矽油證明特別適合作爲 透光的冷卻液。其特徵還有，在高溫時也具有良好的化學 耐抗性。 在按申請專利範圍第17項的發光裝置中，外殼必要時 與裝灌在外殼和支承半導體發光元件的基體之間的冷卻介 質一起起使光線集束的透鏡的作用。 在申請專利範圍第18項中給出的發光裝置產生白光， 儘管半導體發光元件發射紫外或蘭光。 申請專利範圍第19和第20項給出了使産生白光的磷 光顆粒均勻地分佈的優選可選方荦。 本發明按申請專利範圍第21項的改進方案有這樣的優 點，即給一非常薄的平面形pn層分佈地輪送電流。這意 味著，使半導體發光元件的亮度均勻化。 本發明按申請專利範圍第22項的改進方案在半導體發 光元件大的等強度發光區域上是有利的。 7 200822401 所述目的利用中請專利範圍第2巧 線路佈置^特別好地實現。 、、‘、。疋的接觸導線 本發明按申請專利範圍第24項的改進方 線線路本身可以做得比㈣ 入雪泣砗借A ^ 裡，寻的接觸導線線路在輸 均勾=〆――個部位處導致半導體發光元件略微不 •阻。：二广接觸導線線路具有一起重要作用的歐姆 乂且'严申請專利範圍第24J員的半導體發光元件中輸 路’” S&通過基體與接觸導線線路分開的輸電導線線 路進灯’所㈣電導料路可以設計成具有較大的厚度， 因此具有低得多的歐姆電阻。 按申請專利範圍第25項的發光裝置申也利用半導體元 件朝基體發出的光。 _ 在申請專利範圍第26項中給出的基體材料特徵是高的 硬度和在大的波長範圍内良好的透光度。這種基體材料也 有好的化學耐抗性，因此也可以用作平版印刷法中的底 板0 在申請專利範圍第27項中給出的基體厚度特性一方面 在小的重量，另一方面在好的機械穩定性方面是有利的。 在按申請專利範圍第28項的發光裝置中，基體同時用 作將後半空間發射的光向前半空間反射的反射器。 本發明按申請專利範圍第29項的改進方案，可將基體 導線線路（Leiterbahn )不加中間層直接安裝在同時也是反 射器的基體上。 在申請專利範圍第3 0項中所述的用於基體的材料在純 8 200822401 度、化學耐抗性和良好的熱性能方面是有利 對於某些應用場合具有等量地 子里地向則和向後發射光線的 標準發光裝置是有利的。按申靖 文甲w月專利範圍第31項可以這 樣地改進這種發光裝置，使得對於與標準情況不同的應用 场合由+導體發光元件發射的全部光線都向前發射。 本發明按申請專利範圍第3 2 ϊΐ & a ^ 乐項的改進方案在反向件的 咼效率方面是有利的。 發射光線的半導體發光元株4德^ + 尤70仵疋機械方面敏感的結構， 用本發明按申請專利範圍第^ ^ 弟3 3項的改進方案可實現對發 光裝置良好的保護，防止受到損壞。 本發明按申請專利範圍第34〜第36項的改進方案允 奇’發光裝置以在幾百伏至幾千伏範圍内的高工作電壓運 打。這對於應該檢查高壓的存在的應用場合是有利的。在 按申請專利範圍第34~第36項之—的發光裝置中，對於這 種應用目的不需要分壓器。 發明按中請專利範圍第37項的改進方案在以高效率産 生白光方面同樣是有利的。 _在申明專利範圍第38項中給出的發光裝置可以直接用 高壓電源運行。 t過按申明專利範圍第3 9項的改進方案可改善發光元 件的機械穩定性。 ^通系半導體發光70件由一 EPI-晶片，即半導體單晶切 副而成的晶片製成。爲此半導體發光元件借助於本身已知 的相平版印刷和/或幹#刻法纟Ερι晶片製成。這裏载 200822401 體基質通常由晶片材料本身構成，這種晶片材料又支承構 成的半導體發光元件。因此晶片必須切割成有足夠的厚 度，從而使製造完成的半導體發光元件具有足夠的機械穩 疋〖生和強度。但疋足夠的機械承載能力已經受到晶片本身 脆性的限制。此外，在製作完成的半導體發光元件中，爲 了形成半導體發光元件，用作載體基質的晶片材料會丟 失。 但是半導體發光元件也可以由一與晶片基質不同的材 料組成的基體支承，在這種情況下通過基體也可保證發光 元件的穩定性。 按申請專利範圍第39項的發光裝置的實施形式提供了 ^樣的可能性，即如果基體由晶片材料構成，則必須採用 較少的晶片材料作爲基體。即由晶片材料組成的基體可以 做得比在已知的半導體發光元件中薄。由此節省晶片材料 亚總體上降低製造《本。可以通過相應、土也選擇I體材料來 μ現兔光元件所需要的機械穩定性和承載能力。 运裏，按申請專利範圍第4〇項的結構是有利的。在採 用這種玻璃時，其成分大致相當於在申請專利範圍第Μ 項中給定的成分的玻璃材料被證實是有利的。 這種市場上常見的玻璃材料具有良好的機械性能，此 外對溫度波動和其他外界影響基本上不敏感。此外所述玻 璃材料在較大的波長範圍内是透明的。 通過按申請專利範圍第42或第43項的實施形式，也 可i1牛低毛光70件的製造成本，因爲只須採用較少的作爲基 200822401 體的晶片材料。 通萬’希望的發光梦署 二^^ 尤衣置主發射方向是與基體相反的方 °、:’、，導體發光元件通常向基本上所有的空間方向發 射光線。爲了提兩發光元件的發光量，按申請專利範圍第 44項的實施形式是有利的。即如果半導體發光元件在载入 況下發射穿過透明基體的光線，則所述光線被反 射層向希望的發光裝置的主發射方向反射，並附加地對發 光70件的發光量有所貢獻。 實際上已經證明，基體具有按申請專利範圍第45項的 :度是有利的，在基體具有這種厚度時，可實現發光元件 南的機械穩定性。 在-種改進方案中’如果基體具有按 46項的厚度，對於基體是有利的。 ㈣弟 申請專利範圍第47項提供了 一種發光面板，它可以製 =常大的尺寸’因爲單個的發光裝置具有良好的機械穩 按申請專利範圍第48項的發光面板顯示出，發光裳置 ==1匕還有包含在發光裝置内的半導體發光元件具有、好 的政熱性。 本發明按申請專利範圍第49〜第51項的改進 提供白光是有利的。 μ ' ; 在按申請專利範圍第52項的發光面板中，向相 空間發射所産生的全部光線。 、 本發明按巾請專利範圍第5 3項的改進方案在發光面板 11 200822401 良好的冗度均勻性方面是有利的。 【實施方式】 在圖1中總體上用10表示一發光元件單元，它包括一 由剛玉玻璃（Korundglas ) ( Al2〇3玻璃）製成的透明基體 12 ’這種玻璃也以藍寶石玻璃的名稱銷售。這種玻璃的特 徵是高的機械強度，良好的絕緣性能和好的熱性能。基體 12在實踐中具有300至400μπι的厚度。 在基體12的上側設置一總體用14表示的第一電極。 該電極包括一中間的連接導線線路16,該連接導線線 路通過榼向臂1 8，2〇支承平行於連接導線線路丨6分佈的 接觸臂22，24。 兩個平面形發光元件26，28這樣鋪設在連接導線線路 16和接觸臂22，24上，使所述發光元件沿橫向部分地與 所述連接導線線路和接觸臂搭接，如圖示。 每個發光元件26, 28包括三層：一個與連接導線線路 一、牙接觸臂22，24接觸的下層30，它由一 Ρ型的1H-V-半$體材料一例如InGaN製成。 中間層32是一 MQW層，MQW是多量子阱的縮寫， 材料具有超晶格，它具有按超晶格結構變化的電子 的帶結構，因此在其他波長下發射光線。通過mqw層的 芩數可以控制由發光元件26，28發出的光的頻譜。 上層34疋一 n型或自導通的層，它例如可以由 組成。 三個層總共有這樣小的厚度，使得整個三層結構對於 12 200822401 光線是可透過的。 在上述結構上療鑛（Aufdampfen )上一第二電極36。 該第二電極具有一連接導線線路3 8，它通過一薄的氧 化層鋪设在上述結構上，並通過橫向臂4〇，42支承接觸 臂44’ 46’所述接觸臂在中部分佈在發光元件％，28的 上層34上方。 電極14，36與一上連接板48或一下連接板5〇連接， 所述連接板在運行條件下與電源接線柱連接。 用這種方法，使發光元件26，28在載入電壓時向朝後 的方向發出光線，在採用上述半導體材料時，所述光線在 280至360nm和360至465nm的範圍内。 這種光可以向兩側離開發光元件單元丨〇，因爲基體 12，還有電極14和36是透明的。 灵際上，如上所述，發光元件單元10裝在一在圖1中 僅用虛線表示的透明殼體52内。 在殼體52和發光元件單元1〇之間的中間空腔内填充 有矽力康油54。這種液體用於發光元件單元1〇的散熱。 所述液體化學上是惰性的，因此可以直接和發光元件單元 1〇的材料接觸，而不使它們受到損害。矽油還可以非常良 好矛持續地排氣，並且在這裏感興趣的電磁輻射波長範圍 内是透明的。 破璃底座58用於將基體12機械連接到殼體52上。 發光元件單元10與外殼體52及封閉在外殼體内的矽 一知起構成總體上用5 6表示的發光裝置。 13 200822401 在圖中僅舉例地在殼體内 在貫際上所述液體完全充滿殼 部一個分區内示出液體量 體内部。這也適用於其他 附 爲了提高發光裝置的光量，可以在一共同的基 括多個發光元件單元10，如上面參照圖1所說明的那樣二 在圖2中示出相應的發光裝置56。上面參照圖i已經以功 能等效的形式中說明過的部件還具有相同的附圖標記。下 面不必再次對這些部件進行詳細說明。 可以看到在基體12上設置六個發光元件單元，其中每 三個電串聯。這兩個包括三個串聯的發光元件單元的 組並聯地連接在連接板，5〇之間。 ' 如上所述，在採用所述半導體材料時，發光元件單元 10發出紫外光和藍光。 爲了在採用這種發光元件單元的情況下實現白光源， 在矽力康油54内分佈有磷顆粒6〇，所述磷顆粒由具有色 中心（Farbzentrum )的透明固體材料製成。 採用三種磷顆粒，所述磷顆粒分別吸收由發光元件單 元1〇發出的紫外光和藍光，並發出藍、黃和紅光。這樣 來選擇三種磷顆粒之間的數量比，即，在考慮到一些情況 下不同磷顆粒的不同光波轉化效率的情況下，由發光裝置 56總體上得到白色光。 可選地或除此以外，可以設想，外殼體的内表面和/或 外表面塗覆磷顆粒60。這例如可以這樣來進行，即給外殼 體52的相應側面塗覆透明漆，並在還處於粘附的狀態下 14 200822401 時向所述側面喷塗磷顆粒混合物。這在圖2中同樣局部放 大地示出。 同樣可選地或除此以外，也可以給發光元件單元i 〇設 置這種顆粒塗層，如在圖2中同樣以局部放大視圖示出的 那樣。 如上所述，整個發光元件單元丨〇都是透明的（包括基 體12、電極14, 36以及發光元件26, 28 )。由於這個原 因，最好在基體12背面上也設置完全相同的電極和發光 元件佈置結構。這樣在發光裝置5 6的體積相同時可得到 兩倍的發光量。 圖3示出進一步擴展的平面形發光裝置56，它可以用 於顯示器的背光照明（Hinterleuchtung )。可以看到設置 成陣列（Matrix)的發光元件單元1〇，其中現在設置在基 體12兩側上的發光元件單元相互錯開。如果發光元件單 凡10本身不是透光的，則選擇這種佈置結構。 這裏，外殼體52由外框架62和蓋板64，66組成。所 述外框架和改板具有按毛面玻璃的形式打毛（aufrauhen ) 的内表面，以使光流均勻化。 、按圖4的實施例示出一半導體發光面板68。在一設計 成與圖3中所示類似的屏殼體7〇的内部佈置各圓柱形發 光裝置56,如® 2中所示，但是一個發光裝置中串聯的發 光元件單元10的數量可以更大，例如是1〇或2〇個單元。 屏殼體70具有一框_ 72和蓋板74, ％，它們都是透 明的。其中下蓋板74帶有鏡面塗層78,從而由發光裝置 15 200822401 5 6産生的全部光都朝一側發出。 位於各發光裝置56和屏殼體之間的空腔也填充有 夕力康油80，以有利於向外界散熱。如上所述，在所述矽 油内同樣分佈有磷顆粒6〇。 疏板76之除光澤（mattieren)的下邊介面82用來確 保均勻的發光面板亮度/光密度。 按圖5的實施例類似於按圖丨的實施例。但是這裏接 蜀煮22 24和44，46不是如圖1中用16和38所示的那 樣與輸送電流的導線線路直接接觸，而是在其長度上分佈 地叹置七個連接墊nl至n7。接觸臂44，46相應地帶有連 接墊pi至p6。 在連接墊ηι ( ι=ΐ-7 )和/或pi ( i = 1_6 )上分別施加少 量的、在約350。(：時熔化的焊料（未示出）。 接觸臂與唯一一個同樣由三層3〇，32和34組成的平 面形發光元件26的上側或下側連接。 為了能夠如層34 —樣從同一側接通層3〇，並且爲了 可以接觸層30的中部區域，層34具有一中部的縫形開口 b，導線線路段16以一定的側向距離接納在所述開口内。 圖6不出一下基板84的俯視圖，圖5中的發光元件單 元ίο可以這樣地釺焊在所述基板上，使得圖5中的上侧 朝下並與基板84的上側接觸。 基板84具有一正的供電導線線路以和—負的供電導 線線路88。所述供電導線線路基本上具有和電極μ及％ 相同的幾何形狀，並同樣這樣地設有連接墊W至…和y 16 200822401 至p7，即， 上時，使電極 88連接。 在圖5中所示的發光裝置單元焊接在基板84 16’ 36在多個隔開的部位與供電導線線路％， 可以在基板84上施加厚得多的供電導線線路％，μ 乂實踐中是…〇倍厚），並由此具有比很薄的、在 貫踐中厚度爲1〇叫至4〇_的電極14,36低得多的電阻。 通過銅金合金的蒸發鍍敷得到電極14，36和供電導線 線路86, 88。可選地也可以採用銀合金或鋁合金。、书，、’、 供電導線線路86，88與大的觸點90，92連接，通過 所述觸點實現到電源上的連接。 ^在一在圖5和6中所示的發光裝置的實際實施例中， 發光τΜ牛26的層30由InGaN組成，層34由GaN組成。 中間層32也是一 MQW層（多量子阱層），該層形成一超 晶格’通過該超晶格可以控制發出的光線的波長。 在實際的實施例中基體板12具有約lmm的邊長，約 〇.15mm的厚度。基板84具有約19mm和1Smm的邊長和 約〇.4mm的板厚。兩種板都由藍寶石切割而成。 連接墊通常由金製成，爲了連接在p型層和η型層上， 摻雜所述金。 上面參照圖5和6說明的結構使得可以實現具有均句 焭度的基本上完全透明的光源。 根據圖7 ’其中基體板12和基板84僅示意性示出的 發光元件單元1〇佈置在一鑰匙形反射器94内部。所述反 射器具有一向上收縮成尖端的圓錐形周壁96、一底壁％ 17 200822401 和一接線柱100 通過一導線102使發光元件單元與反射器94電連接。 另-導線U)4使發光元件單元的第二接線夹與另一接 線柱106連接，該接線柱1〇6在一 疋距離處與接線柱100 平行設置。 用轉換材料⑽塗覆發光元件單元1〇，所述轉換材料 是石夕/填混合物。這裏鱗材料也是不同磷材料的混合物，所 料同的，材料吸收由發光元件單元1〇發射的光線並發 射監光、黃光和紅光，如前面所述那樣。 將整個上述單元嵌入一由透明環氧樹月旨ιι〇組成的體 積内，所述體積在具有一些情況下爲半球形端部表面時具 有圓柱形的基本幾何形狀，如由發光元件已知的那樣。 圖8示出類似於圖2的發光裝置。類似的部件也具有 相同的附圖標記。 與按圖2的發光裝置的區別在於，在按圖8的發光裝 置中，兩個發光元件單元1〇背靠背地裝在殼體52内。 此外設想，殼體52的内表面附加地帶有磷塗層丨12， 該塗層同#是填顆粒混合物，$種混合物吸收發光元件發 出的光並發射藍、黃和紅光。 大尺寸的連接板1〇2，和104,由金屬製成，並用來使發 光元件散熱。 殼體52是一玻璃圓柱體，它處於約2χ1〇·2至5χΐ〇4 托的真空下。 在叙體52的玻璃壁内側上安裝有由石墨組成的格柵形 18 200822401 私極」14 °石墨電極114與一接頭116連接，該接頭可以 由冋[包壓供電。所述電壓可以在220V至J 〇kv範圍内。 在圖9巾所示的發光裝置可以有選擇地用⑯電壓運行 (在1接板4 8 5 〇上施加約7 · 5至約丨丨v的電愿）或者用 同包壓運仃（在接頭116上施加高電壓並將連接板50揍 地）。 爲了製這白光，设體52攜帶電極114的内表面同樣可 k有外k層112，如前面所述。這裏磷塗層工丨2同時可以 充填電極114的格柵網眼。 在餐圖5至9說明的實施例中，發光裝置的製造分 三個步驟進行：在藍寶石基體12上製造發光元件單元1〇, 製造藍寶石基板84和由它支承的供電導線線路％，Μ， 並將發光元件單元1 〇和基板84連接。 在基體板12和/或基板84的連接墊η1至η7和至 P6上，在其製造時施加小的焊料滴，所述焊料滴共同在加 熱法中在約35CTC時在壓力作用下熔化。在焊料冷卻後發 光元件單元1 〇和基板84同時機械和電連接。 因此發光裝置的整個製造工序可以在採用已知的半導 體製造方法的情況下簡單地進行。 圖10中，在另一個實施例中總體上用1〇1〇表示發光 元件單元，該發光元件單元包括一基底1〇12。基底 可以由常見的耐高溫耐化學的透明玻璃製成，如工業中用 常的那樣。可選地基底1012也可以採用陶莞或例如由銅 或鋁製成的金屬板。在實踐中基底具有約lmm的厚度。 200822401 在基底1G12上施加由剛玉玻璃（A冰玻璃）組成的 透明基體1G14。剛玉玻璃也稱爲藍寶石麵，在所述實施 例中，縫UH4具有約200_的厚度，但如開頭所述， 也可以具有在5至400μπι之間的其他厚度。 基體1014本身支承六個相互隔開設置的半導體發光元 件 ΗΗ6.卜 ΗΗ6.2, 1016·3, 1〇16.4, 1〇16 5 和 ι〇ι6 6, 它們的結構基本相同，下面以半導體發光元件1〇16.2爲例 借助於圖1 1和12來詳細說明這些發光元件。 半導體發光元件1〇16.2包括三層。下層1〇18由ρ型 7 ΙΠ-V-半導體材料製成’例如由㈣製成。中間層薦 疋MQW層。上層1〇22是n型層，例如由製成。 這樣製成的發光元件1016一因此還有發光元件單元 1010’ ^施加電壓時發射波長紫外光和在42U彻⑽範 圍内的1£光。白光發光二極體（LED )可用這樣半導體發 光几件1016這樣來得到，即發光元件單元1〇1〇在LED内 由其中均勾分佈有麟顆粒的梦油包圍。合適的麟顆粒由具 有色中心的透明固體材料製成。冑了將由半導體發光元件 =16發射的紫外光和藍光轉換成白光，採用三種磷顆粒， 它們吸收紫外光和藍光並發射藍、黃和紅光。 通過由不同材料構成的層1018、1020和1022製成半 導體發光元件1016,可以製造一種半導體發光元件1〇16, 思種半導體發光元件可以根據所選擇的材肖發射不同于紫 外光或藍光的光。 P型層1018側向超過MQW層1〇2〇和η型層1022伸 20 200822401 出。在P型層的邊緣區域内在MQW層1〇2〇和η型層1〇22 旁邊還蒸發鍍敷一導線線路1〇24，在其相應的端部上設置 連接觸點nl或n2。 爲了也能夠在中部接通p型層，MqW層1〇2〇和η型 層1022具有一共同的缝形開口 1 ο%。導線線路1 Q28以一 定的側向間隙分佈在所述開口内，在該導線線路中在相對 于半導體發光元件1016的中部設置另一連接觸點η3。導 線線路1028垂直於導線線路1〇24分佈並與其連接，從而 導線線路1024和1028 —起形成一具有三個連接觸點η1、 n2和n3的總體成τ形的導線線路。沿p型層1 〇^ 8的兩個 平行於導線線路1028分佈的邊緣還分別設置兩個與p型 層連接的連接觸點n4和n6或n5和n7 (參見圖11 )。 在η型層1022上蒸發鍵敷一 U形導線線路1〇3〇，其 底邊與Ρ型層1018上的導線線路1024相對，其兩條側邊 位於導線線路1028兩側，特別是如圖11所示。 導線線路1030設有六個連接觸點pi至ρ6，其中在U 形導線線路1030的每條側邊上分別設置三個。 導線線路1024、1028和1030通過蒸發鏡敷銅金合金 得到。可選地，也可以採用銀合金或鋁合金。連接觸點n j 至η7和pi至ρ6通常由金製成，按對於ρ型層或η型層 上的接頭本身已知的方式來摻雜金。 在圖10中可以完整地看到的、帶有六個半導體發光元 件1016的發光元件單元1010中，每三個半導體發光元件 1〇16·1，1016.2 和 1016.3 以及 1016.4，1016.5 和 1016.6 21 200822401 分別電串聯地連接成一組。在每組位於外部的半導體發光 元件1016.1和1016.4處，導線線路1024分別與一連接板 1 032連接。相應地，在由三個串聯的半導體發光元件組成 的組的、相對地位於外面的半導體發光元件1〇16 3，1〇16 6 處，導線線路1030分別與一連接板1034連接。 由三個串聯的半導體發光元件1016組成的兩個組並聯 地連接在連接板1032和1034之間。在發光元件ι〇1〇的 工作條件下連接板1032和1034與一這裏未示出的電源的 接線夹連接。 在製造上述發光元件1010時，用由藍寶石玻璃（Al2〇3 玻璃）組成的基體1014覆蓋基底1012—例如由厚度爲^mm 的玻璃板。又在藍寶石玻璃上施加GaN晶片。然後借助 於本身已知的照相平版印刷法和幹蝕刻法由基體1〇14上 的GaN材料製成半導體發光元件1016.1至1016.6，並通 過蒸發鍍敷形成導線線路1024，1028和1030。 只要基底和塗覆在它上面的基體的表面塗覆GaN材 料，則在一個處理過程中形成不同發光元件（單元）1〇1〇 的多個半導體發光元件1016,然後借助於已知工藝由基底 1012切割出不同的發光元件單元ι〇1〇。 一個切割出來的發光元件單元的半導體發光元件 1016.1至1016.6如上所述串聯或並聯連接。 基底1012與半導體發光元件1016相對的一側設有鏡 面1036 (參見圖12 )。如果代替玻璃採用具有反射作用 的陶瓷或金屬作爲基底1012，可以省去背面的鏡面。 22 200822401 =果㈣玻璃作爲基底㈣，則特別可以考慮採用领 枯（T繼rde)玻璃。這種玻璃以多種不同的名稱鎖隹。 總而言之可以考慮採用對於外界影響，例如溫度波動和化 學品，具有足夠耐抗性的所有玻璃。 每個半導體發光7^1()16也可以稱之爲半導體晶片。 在這裏所述的實施例中，這種類型的單個半導體晶片具有 i 5〇〇_的邊長。因此單個半導體晶片具有ι __ 的面積。這裏單個半導體晶片具# 2.25W的接收功率。因 此，在按所㈣2χ3陣列佈置六個半導體晶片⑻6時， 得到13.25W的總接收功率。 如果單個半導體晶片具有18〇〇μιηχΐ8〇〇^^的面積，則 由此侍到3.24W的接收功率。由此，對於2χ3的半導體晶 片=016，仵到19 44W的總接收功率。在這種佈置結構中 可貝現約1555流明（Lumen )的發光效率。 在圖13中借助于發光元件單元2〇1〇示出一種按圖1〇 ^ 12的發光元件單元1〇1的變型。對應於圖1〇至η的 部件在圖13中帶有同樣的附圖標記加1〇〇〇。上面對於發 光元件單元1010的介紹在含義上相對應地也適用于發光 元件單元2010。 _在發光元件單元2010中與在圖1〇至12中所示的發光 元件單元1010的區別是不設置鏡面。 因爲不没置鏡面，每個半導體發光元件2016都基本上 =所有空間方向發射光線。用每個半導體發光元件2016 或用發光元件單元2016可以模仿在觀察者看來和白熾燈 23 200822401 一樣的發光效果，此外發光元件單元20 1 〇在工作時可以 例如安裝在相應的殼體内，從所述殼體光線可以向所有空 間方向發出。 在圖14中借助于發光元件單元3010示出按圖1〇至12 的發光元件卓元1010的另一種變型。對應於圖1〇至12 的元件在圖14中具有相同的附圖標記加2〇〇〇。 上面對於發光元件單元1〇1〇的說明在含義上相應地也 適用于發光元件單元3010。 帶半導體發光元件3016的發光元件單元301〇既沒有 鏡面也沒有基底。發光元件單元3010相當於在圖5中所 示的發光裝置10。即半導體發光元件3016由一基體3014 支承，所述基體由上面針對圖10至12的實施例的基體14 所述的材料製成，特別是由藍寶石玻璃（αι2〇3玻璃）製 成0 用發光元件單元3010或半導體發光元件3016也可以 模仿從觀察者來看像白熾燈一樣的發光效果。 【圖式簡單說明】 下面借助於實施例參照附圖詳細說明本發明。其中： 圖1示出一發光元件單元的示意性俯視圖，所述發光 元件單元可以單獨地或和相同的單元一起佈置在殼體内， 形成一發光裝置； 圖2示出一包含多個按圖1的發光元件單元的半導體 發光裝置的視圖； 圖3示出另一種半導體發光裝置的俯視圖； 24 200822401 圖4示出-擴展的平面形半導體發光面板 =5示出發光裝置部件的放大俯視圖； 回’ 置：二Tit:俯視圖™ ^ 基體上传到該發光裝置； 圖7示出一外部幾何形狀類似于二極體的發 不意性側視圖； 才置的 圖8不出一種改變的發光裝置的俯視圖，它具有六個 發出光線的半導體發光元件； 圖9不出類似於圖8的視圖，但其中這樣改變發光裝 置’使它發出白光，並且還可以有選擇地用高電壓運行； 圖10不出發光裝置的另一實施例，它包括多個半導體 發光元件； 圖11示出圖10的發光裝置局部的放大俯視圖，其中 可以完整地看到一個半導體發光元件； 圖12不出圖11中所示的發光裝置的局部沿剖分線 XII-XII的剖視圖； 圖13示出按圖10的發光裝置的變型，其中未設置反 射鏡；以及 圖14示出圖10中發光裝置對應於圖5中的發光裝置 的型結構不帶基底的剖視圖。 【主要元件符號說明】 (10):發光元件單元 (12):基體 (14):第一電極 25 200822401 (16):導線線路 (18)(20):橫向臂 (22)(24):接觸臂 (26)(28):發光元件 (30):下層 (32):中間層 (34):上層 (36):第二電極 (38):連接導線線路 (40)(42):橫向臂 (44)(46):接觸臂 (48):上連接板 (50):下連接板 (52):殼體 (54):矽力康油 (56):發光裝置 (58):底座 (60):磷顆粒 (62):框架 (64)(66):蓋板 (68):發光面板 (70):屏殼體 (72):框架 (74)(76):蓋板 200822401 (78): 塗層 (80): 石夕力康油 (82): 下邊介面 (84): 下基板 (86): 正供電導線線路 (88): 負供電導線線路 (90)(92):觸點 (94): 反射器 (96): 周壁 (98): 底壁 (100) •接線粒 (102) :導線 (104) :導線 (102’）（104’）：連接板 (106):接線柱 (1 0 8 ):轉換材料 (110):環氧樹脂 (112):磷塗層 (114):石墨電極 (116):接頭 (1010):發光元件單元 (1012):基底 (1014):透明基體 (1016.1)(1016.2)(1016.3)(1016.4)(1016.5)(1016.6):半導體發光元件 27 200822401 (1018):下層 (1020):中間層 (1022):上層 (1024):導線線路 (1026):開口 (1028) ··導線線路 (1030):導線線路 (1032) (1034):連接板 (2010):發光元件單元 (2016) ••半導體發光元件 (3010):發光元件單元 (3016):半導體發光元件 28200822401 IX. Description of the Invention: The present invention relates to a semiconductor light-emitting device according to the first reference of the patent application, and a light-emitting panel with such a semiconductor light-emitting device (Leuktpane) A semiconductor light-emitting device in the form of a light-emitting diode (LED)_light-emitting device is known, in which a semiconductor crystal comprising a pn junction is supported by an opaque substrate. The semiconductor light-emitting crystal emits light from a recombination of electrons and holes in various directions. Therefore, it is known that most or all of the light emitted to the rear half space is lost in the semiconductor light-emitting device. SUMMARY OF THE INVENTION The semiconductor light-emitting device according to the citation of the first application of the patent application should be improved by the present invention, that is, the amount of available light is increased. This object is achieved according to the invention by a semiconductor light-emitting device having the features set forth in the scope of the patent application. In the semiconductor light-emitting device according to the invention, the substrate supporting the light-emitting semiconductor light-emitting element is permeable to light generated by the semiconductor light-emitting element, so that light emitted backward is not lost but can be utilized, wherein in some cases The mirror behind the illuminator can be used to cause the light emitted after the same to reach the front half space as well. Advantageous developments of the invention are given in the scope of the dependent patent application. The material for supporting the substrate of the semiconductor light-emitting element given in the scope of patent application f 2 is not only light-transmissive but also clear in volume, 5 200822401 Therefore the substrate does not cause light scattering. The substrate given in item 3 of the patent application is characterized by a particularly high hardness and good light transmittance over a large wavelength range. This matrix also has a known chemical (corruption resistance) resistance and can therefore be used as a substrate/substrate in lithographic methods. The thickness characteristics of the substrate given in item 4 of the scope of the patent application are advantageous in terms of small weight and low cost of the base. If a two-layer structure as given in the scope of the patent application is used as a light source in the semiconductor light-emitting element, the electric energy input into the light-emitting element is converted into light with a particularly high efficiency, and the spectrum can be controlled. The present invention is used in a modification of the sixth to eighth aspects of the patent application to produce a high amount of luminescence in the semiconductor light-emitting element. The light generated inside the semiconductor light-emitting element can also be transported to the use portion in the light-emitting device according to the ninth application. Light can also be reflected into the front half space by a mirror located behind the semiconductor light emitting element. The present invention allows, as a result of the improvement of the first aspect of the patent application, to achieve a spatially extended illumination device, in particular a planar illumination device. In a further development of the invention, it is advantageous to have a high brightness/optical density. In the morning, for the semiconductor light-emitting element, it is only partially transparent or opaque, and the arrangement of the patent scope 1235 can be used: to a high brightness/optical density, wherein for two sets of semiconductor light-emitting elements, Then the light emitted backwards is utilized. Two sets of semiconductor light-emitting element arrangements 200822401 On the different sides of the substrate, this is also advantageous in terms of good heat dissipation of the semiconductor light-emitting elements. In the light-emitting element according to claim 13 of the patent application, the substrate is protected together with the semiconductor element supported thereby without being substantially affected by external mechanical influence. Here, the present invention is also advantageous in realizing a planar light-emitting device according to the modification of the 14th application. It is known from the prior art that the improvement of the fifteenth item of the patent clearing is advantageous in terms of good cooling of the semiconductor light-emitting element. Here, according to item 16 of the patent application, oyster sauce proves to be particularly suitable as a light-transmitting coolant. It is also characterized by good chemical resistance at high temperatures. In the light-emitting device of claim 17, the outer casing functions as a lens for concentrating the light together with the cooling medium between the outer casing and the substrate supporting the semiconductor light-emitting element. The light-emitting device given in item 18 of the patent application produces white light, although the semiconductor light-emitting element emits ultraviolet or blue light. The preferred range of applications for uniformly distributing the white light-emitting phosphor particles is given in the scope of claims 19 and 20. The improvement of the invention in accordance with claim 21 of the invention has the advantage of distributing the current to a very thin planar pn layer. This means that the brightness of the semiconductor light emitting element is made uniform. The improvement of the invention according to the 22nd aspect of the patent application is advantageous in the large intensity-intensity illumination area of the semiconductor light-emitting element. 7 200822401 The purpose of the application of the patent scope is the second line layout ^ is particularly well achieved. ,, ‘,. The contact wire of the crucible of the present invention can be made according to the modified square line of the 24th item of the patent application scope. (4) Into the snow weeping, by the A ^, the contact wire line of the search is caused at the position of the input hook = 〆 Semiconductor light-emitting components are slightly unobstructed. : The Erguang contact wire line has an important role in ohmic 乂 and 'strictly apply for the patent range of the semiconductor light-emitting element of the 24th member of the transmission line'" S& the transmission line through the substrate and the contact wire line into the lamp's (four) conductance The material path can be designed to have a relatively large thickness and thus have a much lower ohmic resistance. The illuminating device according to claim 25 of the patent application also utilizes light emitted from the semiconductor element toward the substrate. _ In the scope of claim 26 The base material is characterized by high hardness and good light transmission over a large wavelength range. This matrix material also has good chemical resistance and can therefore also be used as a base plate in lithographic printing. The thickness properties of the substrate given in the scope of item 27 are advantageous on the one hand in small weights and on the other hand in terms of good mechanical stability. In the light-emitting device according to claim 28, the substrate is simultaneously used as A reflector that reflects light in the second half of the space in the second half of the space. According to the improvement of the twenty-ninth aspect of the patent application, the base conductor line can be Leiterbahn) is installed directly on the substrate which is also a reflector without the intermediate layer. The material for the substrate described in item 30 of the patent application is in pure 8 200822401 degrees, chemical resistance and good thermal properties. It is advantageous to have a standard illuminating device that emits light in equal and backward directions in an equal amount for some applications. This illuminating device can be modified in such a way that the illuminating device can be modified in such a way that In the case of a different application from the standard case, all of the light emitted by the +conductor illuminating element is emitted forward. The improvement of the invention according to the scope of the patent application 3 2 ϊΐ & a ^ is advantageous in terms of the efficiency of the reverse part. The light-emitting semiconductor light-emitting element strain 4 de ^ + especially 70 仵疋 mechanically sensitive structure, with the improvement of the invention according to the scope of the patent application of the third paragraph 3 can achieve good protection of the light-emitting device, prevent Damaged by the present invention, according to the improvement of the application of the patent scopes 34 to 36, the illumination device has a high operating voltage in the range of several hundred volts to several kilovolts. This is advantageous for applications where the presence of high pressure should be checked. In the illuminating device according to the scope of the patent application No. 34 to Item 36, a voltage divider is not required for this application purpose. The improvement of the scope item 37 is also advantageous in producing white light with high efficiency. _ The illuminating device given in the 38th paragraph of the patent scope can be directly operated by a high voltage power supply. The improvement scheme can improve the mechanical stability of the light-emitting element. The through-system semiconductor light-emitting device 70 is made of an EPI-wafer, that is, a wafer obtained by cutting a semiconductor single crystal. For this purpose, the semiconductor light-emitting element is formed by a phase known per se. Lithographic and/or dry #刻法纟Ει wafers. The 200822401 bulk matrix is typically comprised of the wafer material itself, which in turn supports the constituent semiconductor light-emitting elements. Therefore, the wafer must be cut to a sufficient thickness so that the fabricated semiconductor light-emitting element has sufficient mechanical stability and strength. However, sufficient mechanical load carrying capacity has been limited by the fragility of the wafer itself. Further, in the completed semiconductor light emitting element, in order to form a semiconductor light emitting element, a wafer material used as a carrier substrate is lost. However, the semiconductor light-emitting element can also be supported by a substrate consisting of a different material than the wafer substrate, in which case the stability of the light-emitting element can also be ensured by the substrate. The embodiment of the illuminating device according to claim 39 of the patent application provides the possibility that if the substrate is composed of a wafer material, less wafer material must be used as the substrate. That is, the substrate composed of the wafer material can be made thinner than in known semiconductor light-emitting elements. This saves wafer material. The mechanical stability and load carrying capacity required for the rabbit optical component can be obtained by selecting the I body material correspondingly and soil. In the case of the operation, it is advantageous to have the structure of the fourth aspect of the patent application. When such a glass is used, it is confirmed that the glass material whose composition is substantially equivalent to the component given in the scope of the patent application is proved to be advantageous. This type of glass material commonly used in the market has good mechanical properties and is basically insensitive to temperature fluctuations and other external influences. Furthermore, the glass material is transparent over a relatively large wavelength range. By the implementation form of the 42nd or 43rd patent application, it is also possible to manufacture a low cost of 70 pieces of silver, since only a small amount of wafer material as the base 200822401 body needs to be used. Tongwan's Hope of Illumination Dreams II ^^ The main emission direction of the U-cloth is opposite to the substrate °, : ', the conductor light-emitting elements usually emit light in substantially all spatial directions. In order to increase the amount of luminescence of the two illuminating elements, the embodiment of claim 44 is advantageous. That is, if the semiconductor light-emitting element emits light that passes through the transparent substrate under load, the light is reflected by the reflective layer toward the main emission direction of the desired light-emitting device, and additionally contributes to the amount of light emitted by the light-emitting device. In fact, it has been proven that the substrate has the advantage of item 45 of the patent application: degree is advantageous, and when the substrate has such a thickness, the mechanical stability of the light-emitting element can be achieved. In a modification, 'if the substrate has a thickness of 46, it is advantageous for the substrate. (4) Brother's application for patent scope Item 47 provides a light-emitting panel, which can be made to a size of 'normally large' because a single light-emitting device has good mechanical stability. According to the light-emitting panel of the 48th application patent, the light-emitting panel is displayed. =1 匕 There is also a semiconductor light-emitting element included in the light-emitting device having good thermal conductivity. It is advantageous in the present invention to provide white light in accordance with the improvement of the scope of claims 49 to 51 of the patent application. μ ' ; In the illuminating panel according to the 52nd patent application, all the generated light is emitted into the phase space. The improvement of the invention according to the fifth aspect of the patent application scope is advantageous in terms of good redundancy uniformity of the light-emitting panel 11 200822401. [Embodiment] A light-emitting element unit is generally indicated at 10 in Fig. 1, which comprises a transparent substrate 12 made of corundum glass (Al2〇3 glass). This glass is also sold under the name of sapphire glass. . The characteristics of this glass are high mechanical strength, good insulation properties and good thermal properties. The substrate 12 has a thickness of 300 to 400 μm in practice. A first electrode, generally indicated at 14, is disposed on the upper side of the substrate 12. The electrode includes an intermediate connecting conductor line 16 which supports the contact arms 22, 24 distributed parallel to the connecting conductor line 6 via the twisting arms 18.2. The two planar light-emitting elements 26, 28 are laid over the connecting conductor line 16 and the contact arms 22, 24 such that the light-emitting elements overlap laterally with the connecting conductor lines and the contact arms, as shown. Each of the light-emitting elements 26, 28 comprises three layers: a lower layer 30 which is in contact with the connecting wire line, the tooth contact arms 22, 24, and which is made of a Ρ-type 1H-V-semi-material such as InGaN. The intermediate layer 32 is an MQW layer, and MQW is an abbreviation for multi-quantum well. The material has a superlattice having a band structure of electrons that changes in a superlattice structure, thereby emitting light at other wavelengths. The spectrum of the light emitted by the light-emitting elements 26, 28 can be controlled by the number of turns of the mqw layer. The upper layer 34 is an n-type or self-conducting layer, which may for example be composed of. The three layers have a total thickness such that the entire three-layer structure is permeable to the light of 12 200822401. A second electrode 36 is applied to the above structure on the Aufdampfen. The second electrode has a connecting wire line 3 8, which is laid on the structure by a thin oxide layer, and is supported by the lateral arms 4, 42 to support the contact arms 44' 46'. Above the upper layer 34 of component %, 28. The electrodes 14, 36 are connected to an upper connecting plate 48 or a lower connecting plate 5, which is connected to the power supply terminal under operating conditions. In this way, the light-emitting elements 26, 28 are caused to emit light in a rearward direction when the voltage is applied, and in the case of using the above semiconductor material, the light is in the range of 280 to 360 nm and 360 to 465 nm. This light can exit the light-emitting element unit 两侧 on both sides because the substrate 12, as well as the electrodes 14 and 36, are transparent. Intelligally, as described above, the light-emitting element unit 10 is housed in a transparent casing 52, which is only indicated by a broken line in Fig. 1. The intermediate cavity between the housing 52 and the light-emitting element unit 1 is filled with 矽力康油54. This liquid is used for heat dissipation of the light-emitting element unit 1〇. The liquid is chemically inert so that it can be directly contacted with the material of the light-emitting element unit 1 without being damaged. Emu oil can also be very well vented continuously and is transparent in the wavelength range of electromagnetic radiation of interest here. A glass base 58 is used to mechanically connect the base 12 to the housing 52. The light-emitting element unit 10 and the outer casing 52 and the casing enclosed in the outer casing constitute a light-emitting device generally indicated by 56. 13 200822401 In the figure, the interior of the liquid body is shown in a section of the casing only in the case where the liquid is completely filled in the casing. This also applies to other light sources for improving the illuminating means, which may comprise a plurality of illuminating element units 10 in common, as explained above with reference to Figure 1 and the corresponding illuminating means 56 is shown in Figure 2 . Components that have been described above in the functionally equivalent form with reference to Figure i also have the same reference numerals. These parts do not have to be described in detail below. It can be seen that six light-emitting element units are provided on the substrate 12, each of which is electrically connected in series. The two sets comprising three series of light-emitting element units are connected in parallel between the connecting plates, 5 。. As described above, when the semiconductor material is employed, the light-emitting element unit 10 emits ultraviolet light and blue light. In order to realize a white light source with such a light-emitting element unit, phosphor particles 6〇 are distributed in the creek oil 54, which is made of a transparent solid material having a color center (Farbzentrum). Three types of phosphor particles are used which respectively absorb ultraviolet light and blue light emitted from the light-emitting element unit 1 and emit blue, yellow and red light. Thus, the ratio between the three phosphorus particles is selected, i.e., white light is generally obtained by the light-emitting device 56 in consideration of the different light-wave conversion efficiencies of the different phosphorus particles in some cases. Alternatively or in addition, it is contemplated that the inner and/or outer surfaces of the outer casing are coated with phosphor particles 60. This can be done, for example, by applying a clear lacquer to the respective side of the outer casing 52 and spraying the phosphorous particle mixture onto the side while still in the adhered state 14 200822401. This is also shown partially enlarged in Figure 2. Alternatively or in addition to this, it is also possible to provide such a coating of particles to the illuminating element unit ,, as also shown in a partially enlarged view in Fig. 2. As described above, the entire light-emitting element unit 丨〇 is transparent (including the substrate 12, the electrodes 14, 36, and the light-emitting elements 26, 28). For this reason, it is preferable to provide the same electrode and illuminating element arrangement on the back surface of the base 12. Thus, twice the amount of luminescence can be obtained when the volume of the illuminating device 56 is the same. Figure 3 shows a further expanded planar illumination device 56 which can be used for backlighting of displays. It can be seen that the light-emitting element units 1A arranged in a matrix in which the light-emitting element units currently disposed on both sides of the substrate 12 are shifted from each other. This arrangement is selected if the illuminating element 10 itself is not light transmissive. Here, the outer casing 52 is composed of an outer frame 62 and cover plates 64, 66. The outer frame and the slab have an inner surface that is aufrauhen in the form of matte glass to homogenize the optical flow. A semiconductor light emitting panel 68 is illustrated in accordance with the embodiment of FIG. The cylindrical light-emitting devices 56 are arranged inside a screen housing 7〇 designed similar to that shown in Fig. 3, as shown in the ® 2, but the number of light-emitting element units 10 connected in series in one light-emitting device can be larger. , for example, 1 or 2 units. The screen housing 70 has a frame _ 72 and a cover plate 74, which are all transparent. The lower cover 74 is provided with a mirror coating 78 such that all of the light generated by the illumination device 15 200822401 5 6 is emitted towards one side. The cavity between each of the light-emitting devices 56 and the screen housing is also filled with the celestial oil 80 to facilitate heat dissipation to the outside. As described above, phosphorus particles 6〇 are also distributed in the eucalyptus oil. The lower interface 84 of the wiper 76 is used to ensure uniform brightness/density of the illuminated panel. The embodiment according to Fig. 5 is similar to the embodiment according to the figure. However, here, the cookers 22 24 and 44, 46 are not in direct contact with the wire line carrying the current as shown by 16 and 38 in Fig. 1, but are distributed over the length of the seven connection pads nl to n7. . The contact arms 44, 46 have correspondingly connected pads pi to p6. A small amount is applied to the connection pads ηι ( ι=ΐ-7 ) and/or pi ( i = 1_6 ), respectively, at about 350. (: molten solder (not shown). The contact arm is connected to the upper or lower side of the only planar light-emitting element 26 which is also composed of three layers 3, 32 and 34. In order to be able to be the same as layer 34 The side is electrically connected to the layer 3, and in order to be able to contact the central region of the layer 30, the layer 34 has a central slotted opening b in which the wire segment 16 is received at a certain lateral distance. In a plan view of the substrate 84, the light-emitting element unit ίο in FIG. 5 can be soldered on the substrate such that the upper side in FIG. 5 faces downward and is in contact with the upper side of the substrate 84. The substrate 84 has a positive power supply line And a negative supply conductor line 88. The supply conductor line has substantially the same geometry as the electrodes μ and %, and is likewise provided with connection pads W to... and y 16 200822401 to p7, ie, when The electrodes 88 are connected. The illuminator unit shown in Fig. 5 is soldered to the substrate 84 16' 36 at a plurality of spaced locations and the supply conductor line %, and a much thicker supply conductor line can be applied to the substrate 84. %,μ 乂 in practice It is ... 〇 thicker, and thus has a much lower resistance than the very thin electrode 14,36 having a thickness of 1 至 to 4 〇 in practice. Electrodes 14, 36 and supply conductor lines 86, 88 are obtained by evaporative plating of copper-gold alloy. Alternatively, a silver alloy or an aluminum alloy can also be used. The book, the ', power supply conductor lines 86, 88 are connected to the large contacts 90, 92 through which the connection to the power source is achieved. In a practical embodiment of the illuminating device shown in Figures 5 and 6, the layer 30 of luminescent Μ Μ 26 is composed of InGaN and the layer 34 is composed of GaN. The intermediate layer 32 is also an MQW layer (multiple quantum well layer) which forms a superlattice through which the wavelength of the emitted light can be controlled. In a practical embodiment, the base plate 12 has a side length of about 1 mm, about 〇. 15mm thickness. The substrate 84 has a side length of about 19 mm and 1 Smm and about 〇. 4mm plate thickness. Both boards are cut from sapphire. The connection pads are typically made of gold which is doped for bonding to the p-type layer and the n-type layer. The structure described above with reference to Figures 5 and 6 makes it possible to achieve a substantially completely transparent source having a uniform sentence. According to Fig. 7', the light-emitting element unit 1A, in which only the base plate 12 and the substrate 84 are schematically shown, is arranged inside a key reflector 94. The reflector has a conical peripheral wall 96 that is contracted upwardly into a tip end, a bottom wall % 17 200822401, and a terminal 100 that electrically connects the light emitting element unit to the reflector 94 via a wire 102. In addition, the wire U) 4 connects the second terminal of the light-emitting element unit to another terminal 106 which is arranged parallel to the terminal 100 at a distance. The light-emitting element unit 1 is coated with a conversion material (10) which is a rock/fill mixture. Here, the scale material is also a mixture of different phosphor materials, and as such, the material absorbs the light emitted by the light-emitting element unit 1 and emits light, yellow light and red light as described above. Embeding the entire unit in a volume consisting of a transparent epoxy tree, the volume having a cylindrical basic geometry, in some cases a hemispherical end surface, as is known from light-emitting elements That way. Figure 8 shows a lighting device similar to that of Figure 2. Similar components have the same reference numerals. The difference from the illumination device according to Fig. 2 is that in the illumination device according to Fig. 8, the two illumination element units 1 are mounted back-to-back in the housing 52. It is further envisaged that the inner surface of the housing 52 is additionally provided with a phosphor coated crucible 12 which is a mixture of filler particles which absorbs light from the illuminating element and emits blue, yellow and red light. Large-sized connecting plates 1〇2, and 104, made of metal, are used to dissipate heat from the illuminating element. The housing 52 is a glass cylinder that is under a vacuum of about 2 χ 1 〇 2 to 5 χΐ〇 4 Torr. A grid-like shape composed of graphite is mounted on the inner side of the glass wall of the body 52. The 200822401 private pole 14° graphite electrode 114 is connected to a joint 116 which can be supplied by 冋 [package voltage. The voltage can range from 220V to J 〇kv. The illuminating device shown in Fig. 9 can be selectively operated with 16 voltages (applying about 7.5 to about 丨丨v on a 1 5 4 8 5 )) or with the same package. A high voltage is applied to the joint 116 and the connecting plate 50 is smashed). To make this white light, the inner surface of the body 52 carrying the electrode 114 can also have an outer k layer 112, as previously described. Here, the phosphor coating process 2 can simultaneously fill the grid mesh of the electrode 114. In the embodiment illustrated in the meal diagrams 5 to 9, the manufacture of the light-emitting device is carried out in three steps: manufacturing the light-emitting element unit 1 on the sapphire substrate 12, manufacturing the sapphire substrate 84 and the power supply wiring line supported by it, Μ, The light emitting element unit 1 is connected to the substrate 84. On the connection pads η1 to η7 and to P6 of the base plate 12 and/or the substrate 84, small solder droplets are applied at the time of manufacture thereof, and the solder droplets are collectively melted under pressure at a pressure of about 35 CTC in the heating method. The light-emitting element unit 1 and the substrate 84 are mechanically and electrically connected at the same time after the solder is cooled. Therefore, the entire manufacturing process of the light-emitting device can be simply carried out using a known semiconductor manufacturing method. In Fig. 10, in another embodiment, a light-emitting element unit is generally indicated by 1〇1〇, and the light-emitting element unit includes a substrate 1〇12. The substrate can be made of a common high temperature resistant chemical resistant clear glass, as is commonly used in the industry. Alternatively, the substrate 1012 may also be a ceramic or a metal plate such as copper or aluminum. In practice the substrate has a thickness of about 1 mm. 200822401 A transparent substrate 1G14 composed of corundum glass (A ice glass) was applied on the substrate 1G12. The corundum glass is also referred to as a sapphire surface. In the embodiment, the slit UH4 has a thickness of about 200 mm, but as described at the beginning, it may have other thicknesses between 5 and 400 μm. The substrate 1014 itself supports six semiconductor light-emitting elements 相互6 which are spaced apart from each other. Bu ΗΗ 6. 2, 1016·3, 1〇16. 4, 1〇16 5 and ι〇ι6 6, their structures are basically the same, below the semiconductor light-emitting elements 1〇16. 2 as an example These light-emitting elements will be described in detail by means of Figs. Semiconductor light-emitting element 1〇16. 2 includes three layers. The lower layer 1 〇 18 is made of a p-type 7 ΙΠ-V-semiconductor material, for example, made of (d). The middle layer recommends the MQW layer. The upper layer 1 22 is an n-type layer, for example, made of. The light-emitting element 1016 thus produced, and thus also the light-emitting element unit 1010', emits wavelength ultraviolet light and 1 £ light in the range of 42 U (10) when a voltage is applied. The white light-emitting diode (LED) can be obtained by using a plurality of semiconductor light-emitting elements 1016 such that the light-emitting element unit 1〇1〇 is surrounded by the dream oil in which the hexagonal particles are uniformly distributed in the LED. Suitable lining particles are made of a transparent solid material having a colored center. In order to convert ultraviolet light and blue light emitted by the semiconductor light-emitting element =16 into white light, three kinds of phosphor particles are used which absorb ultraviolet light and blue light and emit blue, yellow and red light. By fabricating the semiconductor light emitting element 1016 from the layers 1018, 1020, and 1022 made of different materials, a semiconductor light emitting element 1?16 can be fabricated, and the semiconductor light emitting element can emit light different from ultraviolet light or blue light according to the selected material. . The P-type layer 1018 extends laterally beyond the MQW layer 1〇2〇 and the n-type layer 1022 extends 20 200822401. In the edge region of the P-type layer, a wire line 1〇24 is also evaporated next to the MQW layer 1〇2〇 and the n-type layer 1〇22, and a connection contact n1 or n2 is provided at its corresponding end. In order to also enable the p-type layer to be turned on in the middle, the MqW layer 1〇2〇 and the n-type layer 1022 have a common slit-shaped opening 1%. The wire line 1 Q28 is distributed in the opening with a certain lateral gap in which another connection contact η3 is disposed in the middle of the semiconductor light emitting element 1016. The conductor line 1028 is distributed perpendicularly to and connected to the conductor line 1 〇 24 such that the conductor lines 1024 and 1028 together form a generally τ-shaped conductor line having three connection contacts η1, n2 and n3. Two connection points n4 and n6 or n5 and n7 connected to the p-type layer are respectively disposed along the edges of the p-type layer 1 〇^8 which are distributed parallel to the wire line 1028 (see Fig. 11). A U-shaped wire line 1〇3〇 is evaporated on the n-type layer 1022, and the bottom side thereof is opposite to the wire line 1024 on the Ρ-type layer 1018, and the two sides thereof are located on both sides of the wire line 1028, especially as shown in the figure. 11 is shown. The wire line 1030 is provided with six connection contacts pi to ρ6, three of which are respectively disposed on each side of the U-shaped wire line 1030. Wire lines 1024, 1028, and 1030 are obtained by evaporating mirror copper-copper alloy. Alternatively, a silver alloy or an aluminum alloy may also be used. The connection contacts n j to η7 and pi to ρ6 are usually made of gold, doped with gold in a manner known per se for the p-type layer or the n-type layer. In the light-emitting element unit 1010 with six semiconductor light-emitting elements 1016, which can be completely seen in Fig. 10, every three semiconductor light-emitting elements 1〇16·1, 1016. 2 and 1016. 3 and 1016. 4,1016. 5 and 1016. 6 21 200822401 are electrically connected in series to form a group. In each group of externally located semiconductor light emitting elements 1016. 1 and 1016. At 4 places, the wire lines 1024 are respectively connected to a connecting plate 1 032. Correspondingly, at a relatively externally located semiconductor light-emitting element 1 〇 16 3, 1 〇 16 6 of a group consisting of three series-connected semiconductor light-emitting elements, the wire lines 1030 are respectively connected to a connecting plate 1034. Two groups of three series-connected semiconductor light-emitting elements 1016 are connected in parallel between the connecting plates 1032 and 1034. The connecting plates 1032 and 1034 are connected to a terminal block of a power source not shown here under the operating conditions of the light-emitting element 〇1〇. In the manufacture of the above-described light-emitting element 1010, the substrate 1012 is covered with a substrate 1014 composed of sapphire glass (Al2〇3 glass), for example, a glass plate having a thickness of ^mm. A GaN wafer is again applied to the sapphire glass. Then, by means of photolithography and dry etching method known per se, the semiconductor light-emitting element 1016 is made of GaN material on the substrate 1〇14. 1 to 1016. 6. Wire lines 1024, 1028 and 1030 are formed by evaporation plating. As long as the surface of the substrate and the substrate coated thereon are coated with a GaN material, a plurality of semiconductor light-emitting elements 1016 of different light-emitting elements (cells) are formed in one process, and then the substrate is formed by a known process. 1012 cuts out different light-emitting element units ι〇1〇. a semiconductor light-emitting element of a cut light-emitting element unit 1016. 1 to 1016. 6 connected in series or in parallel as described above. A side of the substrate 1012 opposite to the semiconductor light emitting element 1016 is provided with a mirror surface 1036 (see Fig. 12). If a ceramic or metal having a reflecting effect is used as the substrate 1012 instead of the glass, the mirror surface of the back surface can be omitted. 22 200822401 = Fruit (IV) Glass as the base (4), especially the use of collar (T-rde) glass. This glass is locked in a variety of different names. In summary, it is possible to consider all glasses that have sufficient resistance to external influences such as temperature fluctuations and chemicals. Each semiconductor light emitting 7^1() 16 may also be referred to as a semiconductor wafer. In the embodiments described herein, a single semiconductor wafer of this type has a side length of i 5 〇〇 _. Thus a single semiconductor wafer has an area of ι __. Here a single semiconductor wafer has # 2. 25W received power. Therefore, when six semiconductor wafers (8) 6 are arranged in the (four) 2 χ 3 array, 13. 25W total received power. If a single semiconductor wafer has an area of 18 〇〇μηηχΐ8〇〇^^, then it is served to 3. 24W received power. Thus, for a semiconductor wafer of 2 χ 3 = 016, the total received power of 19 19 44 W is obtained. In this arrangement, a luminous efficiency of about 1555 lumens (Lumen) is available. In Fig. 13, a variant of the illuminating element unit 〇1 according to Fig. 1 〇 12 is shown by means of the illuminating element unit 2〇1〇. The components corresponding to Figs. 1A to η are given the same reference numerals in Fig. 13 plus one. The above description of the light-emitting element unit 1010 also applies to the light-emitting element unit 2010 in a corresponding manner. The difference between the light-emitting element unit 2010 and the light-emitting element unit 1010 shown in Figs. 1A to 12 is that no mirror surface is provided. Since there is no mirror, each semiconductor light-emitting element 2016 emits light substantially in all spatial directions. With each of the semiconductor light-emitting elements 2016 or with the light-emitting element unit 2016, the same illumination effect as the incandescent lamp 23 200822401 can be mimicked to the observer, and in addition the light-emitting element unit 20 1 can be mounted, for example, in a corresponding housing during operation, Light from the housing can be emitted in all spatial directions. Another variant of the illuminating element element 1010 according to FIGS. 1A to 12 is shown in FIG. 14 by means of the illuminating element unit 3010. The elements corresponding to Figs. 1 to 12 have the same reference numerals plus 2 in Fig. 14. The above description of the light-emitting element unit 1〇1〇 applies correspondingly to the light-emitting element unit 3010. The light-emitting element unit 301 with the semiconductor light-emitting element 3016 has neither a mirror surface nor a substrate. The light emitting element unit 3010 corresponds to the light emitting device 10 shown in Fig. 5. That is, the semiconductor light-emitting element 3016 is supported by a substrate 3014 made of the material described above for the substrate 14 of the embodiment of Figures 10 to 12, in particular made of sapphire glass (αι2〇3 glass). The element unit 3010 or the semiconductor light emitting element 3016 can also mimic the illuminating effect like an incandescent lamp seen from an observer. BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be described in detail below with reference to the accompanying drawings by way of embodiments. 1 is a schematic plan view of a light-emitting element unit which can be arranged in a housing separately or together with the same unit to form a light-emitting device; FIG. 2 shows a plurality of images according to FIG. A view of a semiconductor light emitting device of a light emitting element unit; FIG. 3 shows a top view of another semiconductor light emitting device; 24 200822401 FIG. 4 shows an expanded planar semiconductor light emitting panel = 5 showing an enlarged plan view of the light emitting device component; ' Set: Two Tit: Top View TM ^ The substrate is uploaded to the illuminating device; Figure 7 shows an unintentional side view of the external geometry similar to the diode; Figure 8 shows a top view of a modified illuminating device It has six light-emitting semiconductor light-emitting elements; Figure 9 shows a view similar to Figure 8, but in which the light-emitting device is changed such that it emits white light and can also be selectively operated with a high voltage; Figure 10 Another embodiment of a light emitting device comprising a plurality of semiconductor light emitting elements; FIG. 11 is a partial enlarged plan view of the light emitting device of FIG. A semiconductor light-emitting element is completely seen; FIG. 12 is a cross-sectional view of a portion of the light-emitting device shown in FIG. 11 taken along a line XII-XII; FIG. 13 shows a modification of the light-emitting device according to FIG. Mirror; and FIG. 14 is a cross-sectional view showing the structure of the illuminating device of FIG. 10 corresponding to the illuminating device of FIG. 5 without a substrate. [Description of main component symbols] (10): Light-emitting element unit (12): Base (14): First electrode 25 200822401 (16): Wire line (18) (20): Lateral arm (22) (24): Contact Arm (26) (28): Light-emitting element (30): Lower layer (32): Intermediate layer (34): Upper layer (36): Second electrode (38): Connecting wire line (40) (42): Lateral arm ( 44) (46): contact arm (48): upper connecting plate (50): lower connecting plate (52): housing (54): 矽力康油 (56): illuminating device (58): base (60) : Phosphorus particles (62): Frame (64) (66): Cover plate (68): Light-emitting panel (70): Screen housing (72): Frame (74) (76): Cover plate 200822401 (78): Coated Layer (80): Shixi Likang Oil (82): Lower Interface (84): Lower Substrate (86): Positive Power Supply Line (88): Negative Power Supply Line (90) (92): Contact (94) : Reflector (96): Perimeter wall (98): Bottom wall (100) • Wiring grain (102): Wire (104): Wire (102') (104'): Connecting plate (106): Terminal (1 0 8): Conversion material (110): Epoxy resin (112): Phosphorus coating (114): Graphite electrode (116): Connector (1010): Light-emitting element unit (1012): Substrate (1014): Transparent substrate (1016) . 1) (1016. 2) (1016. 3) (1016. 4) (1016. 5) (1016. 6): semiconductor light-emitting element 27 200822401 (1018): lower layer (1020): intermediate layer (1022): upper layer (1024): wire line (1026): opening (1028) · wire line (1030): wire line (1032) (1034): connection board (2010): light-emitting element unit (2016) • semiconductor light-emitting element (3010): light-emitting element unit (3016): semiconductor light-emitting element 28