200822230 九、發明說明 【發明所屬之技術領域】 本發明係關於藉由對半導體晶圓等的被處理 自LED的光，對被處理體進行退火的退火裝置 法。 【先前技術】 在半導體裝置的製造中，係對作爲被處理基 體晶圓（以下，簡記爲晶圓），實施成膜處理、 處理、改性處理、退火處理等的各種熱處理。而 近來對半導體裝置之高速化或高積體化的要求， 理時，特別是進行離子植入後的退火處理時，爲 抑制爲最小限度，故指向使被處理體以更高的速 降溫。就此種可進行高速昇降溫的退火裝置而言 使用LED (發光二極體）作爲熱源的裝置（例如 2005 — 53 6045號公報）。LED的加熱不是利用 黑體輻射，而是利用電子與電洞之再結合所產生 射。因此，利用 LED加熱晶圓等時，可使晶圓 速度加速。所以，LED的加熱具有可適用於最前 的可能性。而且，近來，就僅加熱晶圓的表面部 ，射出呈紫外光〜藍色光之短波長的光的LED 採用由GaN構成的LED。 然而，一般來說，由於LED元件能量密度 難以從LED元件獲得高速昇溫時所需的高功率 體照射來 及退火方 板的半導 氧化擴散 且，隨著 進行熱處 了將擴散 度進行昇 ，有提案 曰本特表 加熱源的 的電磁輻 等的降溫 端之製程 分的觀點 元件，多 較低，故 〔power ) 200822230 。尤其，常使用之由GaN所構成的LED元件具有電流値 達到特定値以上時，發光功率即飽和的性質，原理上不可 能取出大的發光功率。 【發明內容】 本發明係有鑒於此種問題而開發者，其目的在於提供 一種使用LED作爲熱源，以可獲得大的發光功率之退火 裝置及退火方法。又，其目的在於提供一種用以實行此種 退火方法的程式記憶媒體。 本發明之退火裝置，係對被處理體照射光以使被處理 體進行退火的退火裝置，其特徵爲：具備：收容上述被處 理體的處理容器；具有對被處理體照射光之複數LED元 件的加熱源；與上述複數LED元件連接且供電至上述 LED元件的供電裝置；將上述LED元件冷卻的冷卻裝霞 ;和設置於上述處理容器與上述加熱源之間的光透過構件 ，並且上述LED元件係由GaAs系材料所構成，上述加熱 源的上述LED元件係一邊藉由上述冷卻裝置進行冷卻， 一邊藉由上述供電裝置進行高電流驅動，依此，構成以高 的光輸出力照射光。 在本發明的退火裝置中，上述加熱源亦可設置於上述 處理容器的兩側。 又，在本發明的退火裝置中，上述冷卻裝置亦可具有 :收容上述加熱源的外殼；和將具有絕緣性，並且可透過 來自LED元件之光的冷卻媒體，供給至上述外殼內的冷 200822230 卻媒體供給機構。 更且，在本發明的退火裝置中，上述冷卻媒體亦可爲 氟系非活性液體。 在本發明的退火裝置中，上述冷卻裝置係將上述led 元件冷卻至0°c以下，上述供電裝置係將100mA以上的電 流流動於上述LED元件。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an annealing apparatus method for annealing a target object by processing light from an LED such as a semiconductor wafer. [Prior Art] In the manufacture of a semiconductor device, various heat treatments such as film formation processing, treatment, modification treatment, annealing treatment, and the like are performed as a substrate wafer to be processed (hereinafter, simply referred to as a wafer). Recently, in order to speed up or increase the integration of semiconductor devices, in particular, in the case of performing annealing after ion implantation, the suppression is minimized, so that the object to be processed is cooled at a higher speed. An apparatus using an LED (Light Emitting Diode) as a heat source for such an annealing apparatus capable of performing high-speed temperature rise and fall (for example, 2005-53 6045). The heating of the LED is not the use of blackbody radiation, but the recombination of electrons and holes to produce. Therefore, when the wafer is heated by the LED or the like, the wafer speed can be accelerated. Therefore, the heating of the LED has the possibility of being applied to the forefront. Further, recently, an LED composed of GaN is used as an LED that heats only the surface portion of the wafer and emits light of a short wavelength of ultraviolet light to blue light. However, in general, since the energy density of the LED element is difficult to obtain high-power body irradiation required for high-speed temperature rise from the LED element and the semi-conductive oxidation diffusion of the annealed square plate, the diffusion degree is increased as the heat is performed, There are proposals for the process points of the cooling end of the electromagnetic radiation source such as the heat source of the special table, which are much lower, so [power] 200822230. In particular, an LED element composed of GaN which is often used has a property that the light-emitting power is saturated when the current 达到 reaches a certain level or more, and in principle, it is impossible to take out a large light-emitting power. SUMMARY OF THE INVENTION The present invention has been made in view of such a problem, and an object thereof is to provide an annealing apparatus and an annealing method which can obtain a large light-emitting power by using an LED as a heat source. Further, it is an object of the invention to provide a program memory medium for carrying out such an annealing method. The annealing apparatus of the present invention is an annealing apparatus that irradiates light to the object to be processed to anneal the object to be processed, and is characterized in that it includes a processing container that accommodates the object to be processed, and a plurality of LED elements that emit light to the object to be processed. a heating source; a power supply device connected to the plurality of LED elements and supplied to the LED element; a cooling device for cooling the LED element; and a light transmitting member disposed between the processing container and the heating source, and the LED The element is made of a GaAs-based material, and the LED element of the heating source is cooled by the cooling device, and is driven by the power supply device to be driven by a high current, thereby illuminating the light with a high light output force. In the annealing apparatus of the present invention, the heat source may be provided on both sides of the processing container. Further, in the annealing apparatus of the present invention, the cooling device may include: a casing that houses the heating source; and a cooling medium that is insulating and that transmits light from the LED element and is supplied to the casing. But the media supply agency. Furthermore, in the annealing apparatus of the present invention, the cooling medium may be a fluorine-based inactive liquid. In the annealing apparatus of the present invention, the cooling device cools the LED element to 0 ° C or less, and the power supply device supplies a current of 100 mA or more to the LED element.
本發明之退火方法，係利用來自被供電之複數LED • 元件的光，將被處理體進行退火的退火方法，其特徵爲具 備：將被處理體收容於處理容器的步驟；和一邊將由 GaAs系材料構成的LED元件加以冷卻，一邊以高電流驅 動以使光從上述LED元件射出的步驟。 在本發明之退火方法之使光從上述LED元件射出的 步驟中，亦可藉由使具有絕緣性，並且可透過來自 LED. 元件之光的冷卻媒體直接接觸上述LED元件，以將上述 L E D元件冷卻。 # 本發明之退火方法中，上述冷卻媒體亦可爲氟系非活 性液體。 在本發明之退火方法之使光從上述LED元件射出的 步驟中，亦可將上述LED元件冷卻至0°c以下，且將流動 於上述LED元件的電流設成1 00mA以上。 本發明之記錄媒體，係記錄有藉由控制裝置實行的程 式之記錄媒體，而該控制裝置係控制藉由來自被供電之複 數LED元件的光，將被處理體進行退火之退火裝置，其 特徵爲：上述程式係藉由上述控制裝置而被實行，依此， -6- 200822230 使5i火裝置實施具備··將被處理體收容於處理容器的步驟 :和一邊將由GaAs系材料構成的[ED元件加以冷卻，一 邊以筒電流驅動’以使光從上述LED元件射出的步驟之 退火方法。 根據本發明’在使被處理體收容於處理容器內的狀態 ’從構成加熱源的複數LED元件，對被處理體照射光以 將被處理體進行退火時，係使用由GaAs系材料構成的 LED元件。由GaAs系材料構成的LED元件，使其電流增 加時，結合層、量子阱之電容的部分，可使光輸出增加， 且光輸出可大致依照電流的比例。因此，藉由一邊將LED 元件冷卻以抑制LED元件的發熱，一邊將LED元件進行 高電流驅動，可從LED元件獲得高的光輸出力。此外， 由GaAs系材料構成的LED元件，其溫度降得越低的話， 光輸出就增加越多。因此，藉由冷卻LED元件，可進一 步從LED元件獲得高的光輸出。藉此構成，可以大的發 光功率，進行被處理體的退火。 【實施方式】 以下，參照附圖說明本發明之一實施型態。以下的實 施型態中，係例舉將表面有植入雜質的晶圓進行退火的退 火裝置來說明。在此，第1圖係表示本發明之一實施型態 之退火裝置的槪略構成之剖面圖。 退火裝置1 〇 〇具有氣密地構成且可供晶圓w搬入的 處理容器1。從處理容器1的底部立設有支持柱2，從支 -7- 200822230 持柱2的上端延伸至內側設有將晶圓W水平地支持的支 持構件3。在對應於處理容器1之上壁及底壁之晶圓W的 部分，分別形成有開口部1 a、1 b。以覆蓋該開口部1 a、 lb的方式氣密地設有光透過構件5a、5b。又，在處理容 器1的側壁設有：從沒有顯示圖的處理氣體供給機構導入 特定之處理氣體的處理氣體導入口 22 ;和與沒有顯示圖 之排氣裝置連接的排氣口 23。更且，在處理容器1的側 壁，設有用以對處理容器1進行晶圓W之搬入搬出的搬 入搬出口 2 4。該搬入搬出口 24係可藉由閘閥25開關自 如。在處理容器1的內部，設有用以測定載置於支持構件 3上之晶圓W的溫度之溫度感應器2 6。又，溫度感應器 26係與配置於處理容器1外側的計測部27連接。從該計 測部27可將溫度檢測信號輸出到後述的製程控制器60。 在處理容器1上壁的上方，以圍繞光透過構件5 a的 方式設有第1外殻6a。同樣地，在處理容器1下壁的下 方，以圍繞光透過構件5b的方式設有第2外殼6b。在外 殻6a、6b內，分別收容有具有複數LED元件的加熱源7a 、7b。 第1外殼6a具有：保持構件28a，從周圍包圍光透 過構件5 a且保持光透過構件5 a的周圍；和散熱構件2 9 a ，與保持構件2 8 a密接固定。散熱構件2 9 a在與光透過構 件5 a對向的位置，保持有加熱源7 a。在支持散熱構件 29a之加熱源7a的下面與光透過構件5a之間，形成有可 收容冷卻媒體的空間30a。此外，在散熱構件29a形成有 -8 - 200822230 由用以使冷卻媒體流通之貫通孔或溝等構成的冷卻媒體流 路3 1a。散熱構件29a係使來自加熱源7a的發熱散熱， 其可由例如銅構成。 第2外殻6b具有：保持構件28b，從周圍包圍光透 過構件5b且保持光透過構件5b的周圍；和散熱構件29b ，與保持構件28b密接固定。散熱構件29b在與光透過構 件5b對向的位置，保持有加熱源7b。在支持散熱構件 2 9b之加熱源7b的上面與光透過構件5b之間，形成有可 收容冷卻媒體的空間30b。此外，在散熱構件29b形成有 由用以使冷卻媒體流通之貫通孔或溝等構成的冷卻媒體流 路3 lb。散熱構件29b係使來自加熱源7b的發熱散熱， 其可由例如銅構成。 加熱源7a、7b係如第2圖放大顯示那樣包含有複數 LED陣列34，而該LED陣列34具有：由具有絕緣性的高 熱傳導性材料所構成，典型來說係A1N陶瓷所構成的支 持構件32 ;和搭載於支持構件32上的多數LED元件33 。在加熱源7a中，複數的LED陣列34係配置於散熱構 件2 9a的下面，另一方面，在加熱源7b中，複數的LED 陣列34係配置於散熱構件29b的上面。在LED陣列34 的支持構件32與LED元件33之間設有電極35。該電極 35係與通過散熱構件29a、29b之內部的供電構件36連 接。更且，對應於一個LED元件3 3的電極3 5、和對應於 與該LED元件鄰接之LED元件33的電極35，係經由延 伸於這兩個電極間的連接引線3 7連接。供電裝置1 〇係經 -9· 200822230 由供電線l〇a、1 Ob與加熱源7a、7b的供電構件36連接 ，經由供電構件3 6可從供電裝置〗〇供電到各個LED元 件33。藉由供電至LED元件33，可使LED元件33發光 ，而藉由該光則可將晶圓W從表背面加熱以進行退火處 理。各LED陣列3 4從平面俯視係構成例如六角形，且配 置成如第3圖所示。一個LED陣列34，可搭載例如2000 〜5000個左右的LED元件33。LED元件33係由GaAs系 材料例如GaAs、GaAsAl所構成。 在第1外殼6a的側壁，設有冷卻媒體導入口丨i a及 冷卻媒體排出口 1 2 a。同樣地，在第2外殼6 b的側壁， 設有冷卻媒體導入口 11b及冷卻媒體排出口 12b。在冷卻 媒體導入口 1 la、1 lb，分別連接有冷卻媒體供給配管13a 、13b。另一方面，在冷卻媒體排出口 12a、12b，連接有 冷卻媒體排出配管14a、14b。冷卻媒體供給配管13a、、 13b係與冷卻媒體供給機構20連接，藉由該冷卻媒體供 給機構2 0可將液體狀的冷卻媒體21經由冷卻媒體供給配 管13a、13b供給到第1外殼6a及第2外殼6b內。藉由 此種包含冷卻媒體供給機構20、冷卻媒體供給配管1 3a、 1 3 b及冷卻媒體導入口 1 1 a、1 1 b的冷卻裝置1 9，第1外 殼6a及光透過構件5a之間的空間30a和第2外殼6b及 光透過構件5b之間的空間30b可由冷卻媒體21所充塡。 再者，第1外殼6a及光透過構件5a之間之空間30a內的 冷卻媒體2 1可經由冷卻媒體排出配管1 4a回收，第2外 殼6b及光透過構件5b之間之空間30b內的冷卻媒體21 -10- 200822230 可經由冷卻媒體排出配管1 4b回收。也就是說，冷卻媒體 2 1可藉由冷卻媒體供給機構20循環。 冷卻媒體21具有可將LED元件33充分地冷卻的冷 卻能力，其可使用具有絕緣性且對於從LED元件3 3照射 之光的波長具有透過性的液體。又，以從LED元件3 3射 出的光不會產生全反射的方式，使用折射率大於1且小於 構成LED元件33之材料的GaAs系材料（爲 GaAs的情 況下折射率爲3.6 )的値的物質爲佳。以效率的觀點而言 ，對於從LED元件33照射之光的波長的透過率係以9〇% 以上爲佳，對於從LED元件33照射的光呈透明（透過率^ 爲大致1 00% )的話更加理想。此種物質可例舉氟系非活 性液體（商品名 Fluor inert、Gal den 等）。Fluorine rt 的 可視光透過率係如第4圖所示那樣爲大致1 00%，折射率 爲大約1.25。 如第1圖所示，該冷卻媒體21係成爲在第1及第2 外殼6a、6b與光透過構件5a、5b之間的空間30a、30b ，與構成加熱源7a、7b的LED元件33直接接觸。又， 該冷卻媒體21亦被供給至第1外殼6a中的散熱射構件 2 9a之冷卻媒體流路31a及第2外殻6b中的散熱構件29b 之冷卻媒體流路3 1 b，LED元件3 3除了直接藉由冷卻媒 體21冷卻外，藉由其熱被散熱至散熱構件29a、2 9b也可 進行冷卻，故可進行極有效率的冷卻。此外，LED元件 3 3係以冷卻至〇°C以下爲止爲佳。 此外，由於冷卻媒體21係直接接觸LED元件33的 -11 - 200822230 發光面，所以些微溶解於冷卻媒體21中的氣體（空氣） 在發光面會成爲氣泡，而有導致LED元件33之發光效率 降低的虞慮。因此，冷卻媒體2 1係以預先實施脫氣、脫 泡處理後，再供給來使用爲佳。就此時的脫氣、脫泡處理 而言，只要將裝有冷卻媒體2 1的密閉容器用真空泵進行 真空抽吸即可。 LED元件33係如上所述由GaAs系材料所構成。形 成LED元件33的0&八5系材料可例舉〇3八8、〇&八^1。此 等材料之放射光的中心波長係在9 5 0〜9 7 0 n m左右的近紅 外區域，該放射光帶區域的寬幅係較窄的50nm左右。將 退火對象設爲砂製的晶圓W時，退火對象的放射（吸收 )特性係成爲第5圖所示者。在Ga A s系材料之放射波長 的9 5 0〜9 7 Onm附近，放射率（吸收率）爲〇 · 6 5左右，不 論溫度多少度，放射率的値皆大致一定。另一方面，以往 常被使用作爲LED元件的GaN，其放射光的中心波長係 3 60〜5 2〇11111左右的紫外〜藍色區域。而且，由（}以所構 成之LED元件之放射波長中的矽的放射率（吸收率）爲 〇·6左右。因此，從由GaA§系材料構成之[ED元件33射 出的光’比從由GaN系材料構成之LED元件射出的光， 可以更筒的吸收率被吸收到矽製的晶圓w。 此外’由GaAs系材料構成的LED元件，若以GaAs 爲例時’電壓-電流特性係如第6A圖所示。也就是說， 由GaAs系材料構成的LED元件，其順電流會因順電壓的 變化而大幅改變。另一方面.，由習知之GaN系材料構成 -12- 200822230 的LED元件’若以GaAs爲例時，其電壓一電流特性 第6B圖所示。亦即，由習知之GaN系材料構成的 元件之依據順電壓的變化之順電流的變化，係比由 系材料構成的LED元件之依據順電壓變化之順電流 化小。因此，由GaAs系材料所構成的LED元件，其 控制的需要性變得比較大： 第7圖所τκ的圖表（graph )中，係比較由GaAs # 料構成之LED元件的電流一光輸出特性、與由GaN 料構成之LED兀件的電流一光輸出特性。亦如該圖 示，由GaN系材料所構成的LED元件，當驅動電流 額定電流（50mA )的1.5倍左右時，光輸出即飽和 一方面，由GaAs系材料所構成的LED元件，即便驅 流大幅超過額定電流（50mA)時，光輸出仍按電流 例增加。也就是說，就由GaAs系材料構成的LED 3 3來說，使驅動電流增加時，結合層、量子阱之電 ® 部分’可使光輸出增加。但是，由於LED元件本身 熱所導致之發光量的降低是存在的，所以在室溫中無 得大的光輸出增加。然而，如上所述，藉由使用冷卻 21及散熱構件29a、29b來冷卻LED元件33，即可 GaAs系材料構成的LED元件3 3獲得大的光輸出 LED兀件3 3冷卻時，爲了有效地抑制發熱所致之發 的降低以獲得充分的光輸出，冷卻媒體21的冷卻溫 以〇 C以下爲佳。又，由GaAs系材料所構成的LED 33有規定脈衝式（pulse m〇de )的動作，此時的電流 係如 LED GaAs 的變 電流 系材 系材 表所 超過 。另 動電 的比 元件 容的 的發 法獲 媒體 從由 。將 光量 度係 元件 値爲 -13- 200822230 1 A (室溫）。因此，如上所述，一邊藉由冷卻媒體2 1及 散熱構件29a、29b將LED元件33冷卻，一邊將相當於 額定電流之20倍的1A電流以連續模式供給至LED元件 3 3 ’依此，與將額定電流供給至LED元件3 3的情況相比 較，可從LED元件33獲得20倍的光輸出。此外，從獲 得有效的光輸出的觀點來看，供給至由GaAs系材料構成 之LED元件33的電流値係以100mA以上爲佳。 φ 第8圖所示的圖表（graph )，係比較由GaAs系材料 構成之LED元件33的溫度—光輸出特性、與由GaN系材 料構成之LED元件的溫度一光輸出特性。亦如該圖表所 示，由GaN系材料構成之LED元件的光輸出不太會隨著 溫度而變化。另一方面，由GaAs系材料構成的LED元件 33，當溫度降低時，其光輸出會明顯地增加。由第8圖可 理解，由GaAs系材料所構成的LED元件33，其在—50 °C 時的光輸出係成爲室溫時（25〜30 °C)之光輸出的兩倍左 • 右。 也就是說，藉由冷卻媒體2 1的冷卻，不僅可實現 LED元件33的高電流驅動，更且，LED元件33的溫度降 低本身可直接幫助光輸出的增加。藉由增加LED元件33 的驅動電流可使光輸出提升，以及藉由冷卻LED元件33 可使光輸出提升，利用以上兩種方式，可從LED元件33 獲得極大的光輸出。例如將LED元件3 3冷卻至-5 0 °C以 使1 A的電流流動，相較於在室溫中以額定電流進行光照 射的情形，電流增加部分爲2 0倍，溫度所造成的效果爲 -14- 200822230 2倍，總共可獲得40倍的光輸出。使用由QaN系材料所 構成的LED元件時，光輸出相對於電流値的增加在額定 電流的1 ·5倍左右即呈飽和。再者，使用由GaN系材料構 成的LED元件時，LED元件之溫度的降低並無法使光輸 出增加’所以也無法期待冷卻所致之光輸出增加的效果。 相對於此種由GaN系材料構成的LED元件，由GaAs系 材料構成的LED元件33，可一邊冷卻lED元件33，一邊 以高電流驅動LED元件33，因此，可將來自LED元件33 的光輸出快速地提升。 如第1圖所示，退火裝置1〇〇的各構成要素係以與具 備微處理器（電腦）的製程控制器60連接而被控制的方 式構成。製程控制器60中連接有：由步驟管理者爲了管 理退火裝置100而進行命令之輸入操作等的鍵盤、或將退 火裝置1 00之作動狀況可視化來顯示的顯示器等所構成的: 使用者介面61。又，製程控制器60中連接有可儲存：用 以將退火裝置100所實行的各種處理藉由製程控制器60 的控制來實現的控制程式，或用以依據處理條件以使退火 裝置1 00的各構成要素實行處理的程式（即處理程式）的 記憶裝置62。處理程式亦可記錄於記憶裝置62所包含的 硬碟或由半導體記憶體所構成的記錄媒體62a。或者，處 理程式亦可記錄於CDROM、DVD等的可攜式記錄媒體 62a。可攜式記錄媒體62a亦可設置於記憶裝置62的特定 位置，藉此，製程控制器60可讀取記錄於記錄媒體62a 的處理程式。更且，亦可從其他的裝置，例如經由專用線 -15- 200822230 路適當地傳送處理程式。接著，按照需要， 者介面6 1的指示等，將任意的處理程式從言 記錄媒體62a叫出以使製程控制器60實行 程控制器60的控制下，進行退火裝置1〇〇 繼之，說明可使用以上之退火裝置100 法的一例。首先，打開閘閥25，將晶圓W 24搬入，並載置於支持構件3上。然後，丨 將處理容器1內形成密閉狀態。繼之，藉由 排氣裝置，將處理容器1內的氣體經由排秦 此外，從沒有顯示圖的處理氣體供給機構， 例如氬氣或氮氣經由處理氣體導入口 22導 內，並將處理容器1內的壓力維持在例如 之範圍內的特定壓力。 在該狀態下，使用冷卻裝置1 9 ’將加絜 LED元件33冷卻到〇°C以下的特定溫度， 至-5 0 °C以下的溫度。具體來說’從冷卻裝 媒體供給機構20，將液體狀的冷卻媒體21 性液體（商品名 Fluorinert、Galden等）’ 供給配管13a、13b及冷卻媒體導入口 11a、 殼6a、6b與光透過購件5a、5b之間的空f 同時，經由冷卻媒體排出口 12a、12b及冷 管14a、14b，將冷卻媒體21從空間3〇a、 卻媒體供給機構2〇。也就是說，一邊用冷卻 根據來自使用 己憶裝置62的 ，依此，在製 所期望的處理 實行之退火方 從搬入搬出口 IS閉閘閥25， 沒有顯示圖的 t 口 23排出。 將特定的氣體 入處理容器1 100〜lOOOOPa i源7a、7b的 較理想係冷卻 置1 9的冷卻 例如親系非活 經由冷卻媒體 1 1 b輸送到外 5 30a、30b ° 卻媒體排出配 3〇b排出至冷 媒體21充滿 -16-The annealing method of the present invention is an annealing method for annealing a target object by using light from a plurality of LEDs/components to be supplied, and is characterized in that: a step of accommodating the object to be processed in the processing container; and The LED element of the material is cooled and driven at a high current to emit light from the LED element. In the step of exposing light from the LED element in the annealing method of the present invention, the LED element may be directly contacted by a cooling medium having insulating properties and transmitting light from the LED element to directly contact the LED element. cool down. In the annealing method of the present invention, the cooling medium may be a fluorine-based inactive liquid. In the step of emitting light from the LED element in the annealing method of the present invention, the LED element may be cooled to 0 ° C or less, and the current flowing through the LED element may be set to 100 mA or more. The recording medium of the present invention is a recording medium on which a program executed by a control device is recorded, and the control device controls an annealing device that anneals the object to be processed by light from a plurality of LED elements to be powered, and is characterized by The above-mentioned program is executed by the above-described control device. Accordingly, -6-200822230 performs the step of accommodating the object to be processed in the processing container and the ED material. An annealing method in which the element is cooled and driven by a tube current to emit light from the LED element. According to the present invention, in a state in which the object to be processed is housed in the processing container, when a plurality of LED elements constituting the heating source are irradiated with light to irradiate the object to be processed, an LED made of a GaAs-based material is used. element. In an LED element made of a GaAs-based material, when the current is increased, the light output can be increased by the portion of the junction layer or the quantum well, and the light output can be substantially in accordance with the ratio of the current. Therefore, by cooling the LED element while suppressing the heat generation of the LED element, the LED element is driven at a high current, and a high light output force can be obtained from the LED element. Further, in the case of an LED element made of a GaAs-based material, the lower the temperature is, the more the light output is increased. Therefore, by cooling the LED elements, a high light output can be further obtained from the LED elements. According to this configuration, annealing of the object to be processed can be performed with a large light emitting power. [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the following embodiments, an annealing device in which a wafer having an impurity implanted on its surface is annealed will be described. Here, Fig. 1 is a cross-sectional view showing a schematic configuration of an annealing apparatus according to an embodiment of the present invention. The annealing apparatus 1 〇 has a processing container 1 which is airtight and can be carried into the wafer w. A support post 2 is erected from the bottom of the processing container 1, and a support member 3 for supporting the wafer W horizontally is provided from the upper end to the inner side of the support -7-200822230. Openings 1a, 1b are formed in portions corresponding to the wafer W on the upper and lower walls of the processing container 1, respectively. The light transmitting members 5a and 5b are airtightly provided so as to cover the openings 1a and 1b. Further, a side wall of the processing container 1 is provided with a processing gas introduction port 22 for introducing a specific processing gas from a processing gas supply mechanism not shown, and an exhaust port 23 connected to an exhaust device not shown. Further, in the side wall of the processing container 1, a loading/unloading port 2 4 for carrying in and carrying out the wafer W to the processing container 1 is provided. The loading/unloading port 24 can be opened and closed by the gate valve 25. Inside the processing container 1, a temperature sensor 26 for measuring the temperature of the wafer W placed on the supporting member 3 is provided. Further, the temperature sensor 26 is connected to the measuring unit 27 disposed outside the processing container 1. The temperature detecting signal can be output from the measuring unit 27 to the process controller 60, which will be described later. The first outer casing 6a is provided above the upper wall of the processing container 1 so as to surround the light transmitting member 5a. Similarly, the second outer casing 6b is provided below the lower wall of the processing container 1 so as to surround the light transmitting member 5b. Heat sources 7a and 7b having a plurality of LED elements are housed in the outer casings 6a and 6b, respectively. The first outer casing 6a has a holding member 28a that surrounds the light-transmitting member 5a from the periphery and holds the periphery of the light-transmitting member 5a, and a heat-dissipating member 209a that is in close contact with the holding member 28a. The heat radiating member 209a holds the heat source 7a at a position opposed to the light transmitting member 5a. A space 30a capable of accommodating a cooling medium is formed between the lower surface of the heat source 7a supporting the heat radiating member 29a and the light transmitting member 5a. Further, in the heat radiating member 29a, a cooling medium flow path 3 1a composed of a through hole or a groove for circulating a cooling medium is formed, -8 - 200822230. The heat radiating member 29a dissipates heat generated from the heat source 7a, and it may be composed of, for example, copper. The second outer casing 6b has a holding member 28b that surrounds the light transmitting member 5b from the periphery and holds the periphery of the light transmitting member 5b, and a heat radiating member 29b that is closely attached to the holding member 28b. The heat radiating member 29b holds the heat source 7b at a position opposed to the light transmitting member 5b. A space 30b capable of accommodating a cooling medium is formed between the upper surface of the heat source 7b supporting the heat radiating member 919 and the light transmitting member 5b. Further, a cooling medium flow path 3 lb formed of a through hole or a groove for circulating a cooling medium is formed in the heat radiating member 29b. The heat radiating member 29b dissipates heat generated from the heat source 7b, and it may be composed of, for example, copper. The heating sources 7a, 7b include a plurality of LED arrays 34 as shown enlarged in Fig. 2, and the LED arrays 34 have a high thermal conductivity material having an insulating property, typically a support member composed of A1N ceramics. 32; and a plurality of LED elements 33 mounted on the support member 32. In the heat source 7a, a plurality of LED arrays 34 are disposed on the lower surface of the heat radiating member 209a. On the other hand, in the heat source 7b, a plurality of LED arrays 34 are disposed on the upper surface of the heat radiating member 29b. An electrode 35 is provided between the support member 32 of the LED array 34 and the LED element 33. This electrode 35 is connected to the power supply member 36 passing through the inside of the heat radiating members 29a and 29b. Further, the electrode 35 corresponding to one LED element 33 and the electrode 35 corresponding to the LED element 33 adjacent to the LED element are connected via a connecting lead 37 extending between the two electrodes. The power supply device 1 is connected to the power supply members 36 of the heat sources 7a, 7b by the power supply lines 10a, 1 Ob, and can be supplied from the power supply device to the respective LED elements 33 via the power supply member 36. By supplying power to the LED element 33, the LED element 33 can be made to emit light, and by this light, the wafer W can be heated from the front and back sides for annealing treatment. Each of the LED arrays 34 is formed of, for example, a hexagonal shape in plan view, and is arranged as shown in Fig. 3. One LED array 34 can mount, for example, about 2,000 to 5,000 LED elements 33. The LED element 33 is made of a GaAs-based material such as GaAs or GaAsAl. A cooling medium introduction port 丨i a and a cooling medium discharge port 1 2 a are provided on the side wall of the first outer casing 6a. Similarly, a cooling medium introduction port 11b and a cooling medium discharge port 12b are provided on the side wall of the second outer casing 6b. Cooling medium supply pipes 13a and 13b are connected to the cooling medium introduction ports 1 la and 1 lb, respectively. On the other hand, cooling medium discharge pipes 14a and 14b are connected to the cooling medium discharge ports 12a and 12b. The cooling medium supply pipes 13a and 13b are connected to the cooling medium supply mechanism 20, and the cooling medium supply unit 20 can supply the liquid cooling medium 21 to the first casing 6a and the first through the cooling medium supply pipes 13a and 13b. 2 inside the casing 6b. The cooling device 186 including the cooling medium supply mechanism 20, the cooling medium supply pipes 1 3a and 1 3 b, and the cooling medium introduction ports 1 1 a and 1 1 b is disposed between the first outer casing 6a and the light transmitting member 5a. The space 30a and the space 30b between the second outer casing 6b and the light transmitting member 5b can be filled by the cooling medium 21. Further, the cooling medium 21 in the space 30a between the first outer casing 6a and the light transmitting member 5a can be recovered by the cooling medium discharge pipe 14a, and the cooling in the space 30b between the second outer casing 6b and the light transmitting member 5b. The media 21 -10- 200822230 can be recovered via the cooling medium discharge pipe 14b. That is, the cooling medium 21 can be circulated by the cooling medium supply mechanism 20. The cooling medium 21 has a cooling ability capable of sufficiently cooling the LED element 33, and it is possible to use a liquid which is insulating and has transparency to the wavelength of light irradiated from the LED element 33. In addition, a GaAs-based material having a refractive index of more than 1 and smaller than a material constituting the LED element 33 (having a refractive index of 3.6 in the case of GaAs) is used so that the light emitted from the LED element 33 does not cause total reflection. The substance is better. From the viewpoint of efficiency, the transmittance of the wavelength of the light irradiated from the LED element 33 is preferably 9% or more, and is transparent to the light irradiated from the LED element 33 (the transmittance ^ is approximately 100%). More ideal. Such a substance may, for example, be a fluorine-based inactive liquid (trade name: Fluor inert, Gal den, etc.). The visible light transmittance of the Fluorine rt is approximately 100% as shown in Fig. 4, and the refractive index is approximately 1.25. As shown in Fig. 1, the cooling medium 21 is a space 30a, 30b between the first and second outer casings 6a, 6b and the light transmitting members 5a, 5b, and is directly connected to the LED elements 33 constituting the heating sources 7a, 7b. contact. Further, the cooling medium 21 is also supplied to the cooling medium flow path 31a of the heat radiation member 29a in the first casing 6a and the cooling medium flow path 31b of the heat dissipation member 29b in the second casing 6b, and the LED element 3 3, in addition to being directly cooled by the cooling medium 21, it can be cooled by dissipating heat to the heat radiating members 29a and 29b, so that extremely efficient cooling can be performed. Further, it is preferable that the LED element 33 is cooled to a temperature below 〇 °C. In addition, since the cooling medium 21 directly contacts the light-emitting surface of the -11 - 200822230 of the LED element 33, the gas (air) slightly dissolved in the cooling medium 21 becomes a bubble on the light-emitting surface, and the luminous efficiency of the LED element 33 is lowered. Concerns. Therefore, it is preferable that the cooling medium 21 is subjected to degassing and defoaming treatment in advance, and then supplied and used. In the degassing and defoaming treatment at this time, the sealed container equipped with the cooling medium 21 may be vacuum-pumped by a vacuum pump. The LED element 33 is made of a GaAs-based material as described above. The material of the 0& 八5-series forming the LED element 33 is exemplified by 〇3-8, 〇&八^1. The center wavelength of the emitted light of these materials is in the near-infrared region of about 950 to 970 nm, and the width of the region of the radiation band is about 50 nm. When the object to be annealed is a wafer W to be sanded, the radiation (absorption) characteristics of the object to be annealed are as shown in Fig. 5. The emissivity (absorption rate) is about 6 · 65 or so near the emission wavelength of the Ga A s-based material, and the radiance of the emissivity is almost constant regardless of the temperature. On the other hand, GaN which is conventionally used as an LED element has a center wavelength of emitted light of an ultraviolet to blue region of about 3 60 to 5 2 〇 11111. Further, the emissivity (absorption rate) of 矽 in the emission wavelength of the LED element formed by (} is about 〇·6. Therefore, the light emitted from the ED element 33 composed of the GaA §-based material is more than Light emitted from an LED element made of a GaN-based material can be absorbed into the patterned wafer w at a higher absorption rate. Further, 'voltage-current characteristics of an LED element made of a GaAs-based material when GaAs is taken as an example It is shown in Fig. 6A. That is to say, the LED element composed of a GaAs-based material has a large current change due to a change in the forward voltage. On the other hand, it is composed of a conventional GaN-based material -12-200822230 The LED element 'when GaAs is taken as an example, its voltage-current characteristic is shown in Fig. 6B. That is, the change of the forward current according to the change of the forward voltage of the element made of the conventional GaN-based material is a system. The LED element of the material has a small forward current according to the change of the voltage. Therefore, the LED element composed of the GaAs-based material has a relatively large control demand: in the graph of τκ in Fig. 7, Compare LED components composed of GaAs # material The current-light output characteristic and the current-light output characteristic of the LED element composed of GaN material. As shown in the figure, the LED element composed of GaN-based material is about 1.5 times of the rated current of the driving current (50 mA). At the same time, the light output is saturated. On the one hand, the LED element composed of the GaAs-based material increases the light output by the current when the driving current greatly exceeds the rated current (50 mA). That is, it is composed of a GaAs-based material. In LED 3 3, when the drive current is increased, the junction layer and the electric portion of the quantum well can increase the light output. However, since the decrease in the amount of luminescence caused by the heat of the LED element itself is present, at room temperature However, as described above, by cooling the LED element 33 by using the cooling 21 and the heat radiating members 29a and 29b, the LED element 33 made of a GaAs-based material can obtain a large light output LED. When the member 33 is cooled, in order to effectively suppress the decrease in heat generation to obtain a sufficient light output, the cooling temperature of the cooling medium 21 is preferably 〇C or less. Further, the LED 33 composed of a GaAs-based material is specified. pulse The operation of the pulse type (pulse m〇de), at this time, the current system is exceeded by the variable current system of the LED GaAs. The other method of generating the power than the component of the component is obtained by the media. The component 値 is -13-22222230 1 A (room temperature). Therefore, as described above, while the LED element 33 is cooled by the cooling medium 21 and the heat radiating members 29a and 29b, 1A equivalent to 20 times the rated current is applied. The current is supplied to the LED element 3 3 ' in a continuous mode. Accordingly, 20 times of light output can be obtained from the LED element 33 as compared with the case where the rated current is supplied to the LED element 33. Further, from the viewpoint of obtaining an effective light output, the current supplied to the LED element 33 made of a GaAs-based material is preferably 100 mA or more. φ The graph shown in Fig. 8 compares the temperature-light output characteristics of the LED element 33 composed of a GaAs-based material and the temperature-light output characteristics of the LED element composed of a GaN-based material. As also shown in the graph, the light output of the LED element composed of a GaN-based material does not change with temperature. On the other hand, the LED element 33 made of a GaAs-based material has a marked increase in light output when the temperature is lowered. As can be understood from Fig. 8, the LED element 33 composed of a GaAs-based material has a light output at -50 °C which is twice as long as the light output at room temperature (25 to 30 °C). That is to say, not only the high current drive of the LED element 33 can be achieved by the cooling of the cooling medium 21, but also the temperature drop of the LED element 33 itself can directly contribute to the increase of the light output. The light output can be increased by increasing the driving current of the LED element 33, and the light output can be increased by cooling the LED element 33. With the above two methods, an extremely large light output can be obtained from the LED element 33. For example, the LED element 33 is cooled to -50 ° C to make a current of 1 A flow, and the current is increased by 20 times compared with the case where the light is irradiated at a rated current at room temperature, and the effect by temperature is caused. A total of 40 times the light output of 14-200822230. When an LED element composed of a QaN-based material is used, the increase in the light output with respect to the current 値 is saturated at about 1.5 times the rated current. Further, when an LED element made of a GaN-based material is used, the decrease in the temperature of the LED element does not increase the light output. Therefore, the effect of increasing the light output due to cooling cannot be expected. With respect to such an LED element made of a GaN-based material, the LED element 33 made of a GaAs-based material can drive the LED element 33 with a high current while cooling the lED element 33, so that the light from the LED element 33 can be output. Improve quickly. As shown in Fig. 1, each constituent element of the annealing apparatus 1 is configured to be connected to a process controller 60 having a microprocessor (computer) and controlled. The process controller 60 is connected to a keyboard that performs a command input operation for the management of the annealing device 100 by the step manager, or a display that visualizes the operation state of the annealing device 100: a user interface 61 . Further, the process controller 60 is connected with a control program for realizing various processes performed by the annealing device 100 by the control of the process controller 60, or for making the annealing device 100 according to processing conditions. Each component performs a memory device 62 of a program (ie, a processing program) to be processed. The processing program can also be recorded on a hard disk included in the memory device 62 or a recording medium 62a composed of a semiconductor memory. Alternatively, the processing program may be recorded on the portable recording medium 62a such as a CDROM or a DVD. The portable recording medium 62a can also be disposed at a specific location of the memory device 62, whereby the process controller 60 can read the processing program recorded on the recording medium 62a. Furthermore, the processing program can be appropriately transferred from other devices, for example, via dedicated line -15-200822230. Then, if necessary, the arbitrary processing program is called from the recording medium 62a, so that the processing controller 60 is under the control of the real-time controller 60, and the annealing device 1 is followed by the instruction of the interface 61. An example of the above annealing apparatus 100 method can be used. First, the gate valve 25 is opened, the wafer W 24 is carried in, and placed on the support member 3. Then, 处理 a sealed state is formed in the processing container 1. Then, the gas in the processing container 1 is supplied to the processing gas supply mechanism, such as argon gas or nitrogen gas, through the processing gas supply port 22 through the exhaust gas, and the processing container 1 is guided. The pressure within is maintained at a specific pressure within, for example, a range. In this state, the twisted LED element 33 is cooled to a temperature lower than 〇 ° C using a cooling device 1 9 ' to a temperature of -50 ° C or lower. Specifically, from the cooling medium supply mechanism 20, a liquid cooling medium 21 liquid (trade name: Fluorinert, Galden, etc.) is supplied to the pipes 13a and 13b, the cooling medium introduction port 11a, the casings 6a and 6b, and the light is purchased. At the same time, the space f between the pieces 5a and 5b passes through the cooling medium discharge ports 12a and 12b and the cold pipes 14a and 14b, and the cooling medium 21 is separated from the space 3〇a by the medium supply mechanism 2. In other words, the cooling is performed in accordance with the use of the memory device 62, and the annealing of the desired processing is performed from the loading/unloading port IS closing valve 25, and the t port 23 of the drawing is not discharged. The cooling of the specific gas into the processing vessel 1 100~100oPa i source 7a, 7b is cooled, for example, the parental non-live is transported to the outer 5 30a, 30b ° via the cooling medium 1 1 b but the medium discharge is 3 〇b discharged to cold media 21 full -16-
200822230 空間3 0a、3 Ob，一邊使冷卻媒體2 1在空間 冷卻媒體供給機構20之間循環。結果，如J； 於空間30a、30b的加熱源7a、7b可藉由冷《 卻，同時可從支持於散熱構件2 9 a、2 9b的加 ，散熱至散熱構件29a、2 9b。 又，將特定的電流從供電裝置1 0供給至 7b的LED元件33以使LED元件33點亮。财 件33係由GaAs材料例如GaAs、GaAsAl所精 由於由GaAs系材料構成之LED元件的光輸技 電流的比例，所以藉由一邊將LED元件33片 驅動電流上昇至例如100mA以上爲止，可從 獲得大的光輸出。更且，如上所述，由GaAs 成之LED元件3 3的光輸出也會因冷卻所致之 身而上升。因此，可一邊使用冷卻媒體2 1將 冷卻，降低LED元件本身的發熱所致之LED 光量的降低，一邊驅動LED元件33，依此， 件3 3獲得明顯大的光輸出。藉此構成，可以 之500°C/ sec左右以上的加熱速度，將晶圓 ，對於比以往要求更高速加熱的退火，也可充 此外，本發明並不限定於上述實施型態， 的變形。例如，上述實施型態係以在作爲被處 的兩側，設置具有LED元件的加熱源爲例來 ，亦可僅在被處理體的任一側，設置加熱源。 使LED元件直接浸漬於冷卻媒體以進行冷卻 30a、30b 與 :所述，露出 钔媒體21冷 熱源7a 、 7b 加熱源7a、 :時，LED元 I成。而且， ί係大致按照 r卻，一邊使 LED元件33 系材料所構 :溫度降低本 LED元件33 元件3 3之發 可從LED元 :比以往更高 W急速加熱 分地適用。 可進行各種 ;理體之晶圓 說明，然而 又，雖表示 的例子，但 -17- 200822230 是並不受限於此。被處理體並不侷限於半導體晶圓，亦可 以FPD用玻璃基板等的其他基板作爲對象。 〔產業上利用之可能性〕 本發明適用於雜質植入後的退火處理等必須進行急速 加熱的用途。 【圖式簡單說明】 第1圖係表示本發明之一實施型態之退火裝置的槪略 構成之剖面圖。 第2圖係將第1圖所示之退火裝置的加熱源放大顯示 的剖面圖。 第3圖係用以說明第1圖所示之退火裝置之加熱源中 的LED陣列的配列之模式圖。 第4圖係表示在第1圖所示的退火裝置中可當作冷卻 媒體使用之Fluor inert的透過率曲線之圖表（graph )。 第5圖係表示矽的放射（吸收）特性之圖表（graph )° 第6A圖係表示由GaAs所構成之LED元件的電壓一 電流特性之圖表。 第6B圖係表示由GaN所構成之LED元件的電壓一 電流特性之圖表。 第7圖係表示由GaN所構成之LED元件的電流-光 輸出特性、與由GaAs所構成之LED元件的電流-光輸出 -18- 200822230 特性之圖表。 第8圖係表示由GaN所構成之LED元件的溫度-光 輸出特性、與由Ga As所構成之LED元件的溫度-光輸出 特性之圖表。 【主要元件符號說明】 1 :處理容器 _ 2 :支持柱 3 :支持構件 5a、5b :光透過構件 6a 、 6b :外殻 7 a、7 b :加熱源 1 〇 :供電裝置 1 0 a、1 0 b :供電線 1 1 a、1 1 b :冷卻媒體導入口 Φ 12a、12b :冷卻媒體排出口 13a、13b :冷卻媒體供給配管 14a、14b :冷卻媒體排出配管 1 9 :冷卻裝置 20 :冷卻媒體供給機構 2 1 :冷卻媒體 22 :處理氣體導入口 23 :排氣口 24 :搬入搬出口 -19- 200822230 25 :閘閥 26 :溫度感應器 27 :計測部 28a、28b :保持構件 29a、29b :散熱構件 3 0a、30b ：空間 3 1 a、3 1 b :冷卻媒體流路 φ 32 :支持構件 3 3: L E D元件 3 4: L E D 陣歹[J 3 5 :電極 36 :供電構件 37 :連接引線 60 :製程控制器 62 :記憶裝置 • 62a :記錄媒體 100 :退火裝置 -20-The 200823030 space 30a, 3 Ob circulates the cooling medium 21 between the space cooling medium supply mechanisms 20. As a result, the heat sources 7a, 7b in the spaces 30a, 30b can be cooled to the heat dissipating members 29a, 29b by the addition of the heat dissipating members 2 9 a, 2 9b. Further, a specific current is supplied from the power supply device 10 to the LED element 33 of 7b to light the LED element 33. Since the financial component 33 is made of a GaAs material such as GaAs or GaAsAl, the ratio of the light-transmitting current of the LED element made of the GaAs-based material is increased, for example, by increasing the driving current of the LED element 33 to, for example, 100 mA or more. Get a large light output. Further, as described above, the light output of the LED element 33 made of GaAs also rises due to cooling. Therefore, it is possible to drive the LED element 33 while cooling by using the cooling medium 2 1 to reduce the amount of LED light due to heat generation of the LED element itself, whereby the piece 3 3 obtains a significantly large light output. According to this configuration, the wafer can be annealed at a heating rate of about 500 ° C / sec or higher, and can be heated at a higher speed than conventionally required. The present invention is not limited to the above-described embodiment. For example, in the above embodiment, a heating source having an LED element is provided on both sides of the object, and a heating source may be provided only on either side of the object to be processed. The LED element is directly immersed in a cooling medium for cooling 30a, 30b and : when the enthalpy medium 21 cold heat source 7a, 7b heat source 7a is exposed, the LED element I is formed. Further, ί is based on r, and the LED element 33 is made of a material: temperature is lowered. LED element 33 Element 3 3 can be emitted from the LED element: higher than ever. W Rapid heating is applied. Various kinds of wafers can be described; however, although the examples are shown, -17-200822230 is not limited to this. The object to be processed is not limited to the semiconductor wafer, and may be applied to other substrates such as a glass substrate for FPD. [Possibility of industrial use] The present invention is suitable for applications in which rapid heating is required, such as annealing treatment after impurity implantation. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a schematic configuration of an annealing apparatus according to an embodiment of the present invention. Fig. 2 is a cross-sectional view showing an enlarged view of a heating source of the annealing apparatus shown in Fig. 1. Fig. 3 is a schematic view for explaining the arrangement of the LED arrays in the heating source of the annealing apparatus shown in Fig. 1. Fig. 4 is a graph showing a transmittance curve of a Fluor inert which can be used as a cooling medium in the annealing apparatus shown in Fig. 1. Fig. 5 is a graph showing the radiation (absorption) characteristics of germanium. Fig. 6A is a graph showing the voltage-current characteristics of an LED element composed of GaAs. Fig. 6B is a graph showing the voltage-current characteristics of the LED element composed of GaN. Fig. 7 is a graph showing the current-light output characteristics of an LED element composed of GaN and the current-light output -18-200822230 characteristic of an LED element composed of GaAs. Fig. 8 is a graph showing the temperature-light output characteristics of an LED element composed of GaN and the temperature-light output characteristics of an LED element composed of Ga As. [Description of main component symbols] 1 : Processing container _ 2 : Support column 3 : Support members 5a, 5b : Light transmitting members 6a, 6b : Housing 7 a, 7 b : Heating source 1 〇: Power supply device 1 0 a, 1 0 b : power supply line 1 1 a, 1 1 b : cooling medium introduction port Φ 12a, 12b : cooling medium discharge ports 13 a , 13 b : cooling medium supply pipes 14 a , 14 b : cooling medium discharge pipe 1 9 : cooling device 20 : cooling Media supply mechanism 2 1 : Cooling medium 22 : Process gas introduction port 23 : Exhaust port 24 : Loading and unloading port -19 - 200822230 25 : Gate valve 26 : Temperature sensor 27 : Measuring unit 28 a , 28 b : Holding members 29 a , 29 b : Heat radiating members 30a, 30b: space 3 1 a, 3 1 b : cooling medium flow path φ 32 : supporting member 3 3 : LED element 3 4: LED array [J 3 5 : electrode 36: power supply member 37: connection lead 60: Process controller 62: memory device • 62a: recording medium 100: annealing device-20-