JP2015056624A - Substrate temperature control device and substrate processor using the same device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate temperature control device capable of quickly changing the temperature of a substrate in a chamber of a substrate processor, and increasing the degree of freedom of substrate processing in the chamber.SOLUTION: A substrate temperature control device 100 capable of controlling the temperature of a substrate S to a first temperature which is a relatively low temperature and a second temperature which is a relatively high temperature in the chamber of a substrate processor includes: a mounting stand 10 in which a coolant channel 41 is formed; a substrate elevation unit 20 for elevating the substrate S between a first position on the mounting stand 10 and a second position above the mounting stand 10; a cooling unit 40 for supplying coolant to the coolant channel 41 to control the temperature of the substrate S to the first temperature at a first position; a heating unit 30 for emitting light having wavelength that can be absorbed by the substrate S from the mounting stand 10 side, and for heating the substrate S at the second position to control the temperature of the substrate to the second temperature; and a light transmission window 50 disposed in the mounting stand 10 for transmitting the light emitted from the heating unit 30, and for guiding the light to the substrate S.

Description

  The present invention relates to a substrate temperature adjusting device capable of adjusting a substrate temperature to a relatively low temperature first temperature and a relatively high temperature second temperature, and a substrate processing apparatus using the same.

  Some processing of a substrate such as a semiconductor wafer undergoes a plurality of processes at different temperatures. For example, a process of performing etching removal at a low temperature and then removing an etching residue at a high temperature, a process of heating a film formed on a substrate, and then rapidly cooling the film are known.

  In such a process through two kinds of temperature steps, conventionally, if the same chamber is used, temperature adjustment takes time and throughput is lowered. Therefore, it is common to use separate chambers set at respective temperatures. It was the target.

  However, when separate chambers are used in this way, the footprint of the apparatus is increased and the cost is increased.

  For this reason, a processing apparatus that can increase and decrease the temperature in a short time and perform a high-temperature process and a low-temperature process in the same chamber has been studied. For example, Patent Document 1 includes a substrate support base having a cooling function provided in a chamber, a halogen lamp provided above the chamber, and a quartz window provided in the upper portion of the chamber. A heating / cooling device is disclosed in which, when heating, the substrate is stopped at a heating position raised from the substrate support, and when the substrate is cooled, the substrate is stopped at a cooling position on the substrate support.

International Publication No. 2010/150590 Pamphlet

  However, since the heating / cooling device disclosed in Patent Document 1 is provided with a mechanism for heating at the upper part of the chamber, a shower head for introducing gas is provided at the upper part of the chamber, or at the upper part of the chamber. It is difficult to provide a plasma source and the degree of freedom in substrate processing is low.

  The present invention has been made in view of such circumstances, and can change the temperature of the substrate in the chamber of the substrate processing apparatus in a short time, and increase the degree of freedom of substrate processing in the chamber. It is an object of the present invention to provide a substrate temperature control apparatus capable of performing the above and a substrate processing apparatus using the same.

  In order to solve the above problems, according to a first aspect of the present invention, a substrate capable of adjusting the temperature of the substrate to a relatively low temperature and a relatively high temperature in the chamber of the substrate processing apparatus. A temperature control device, in which a temperature control medium channel is formed, a mounting table on which a substrate is mounted, and a first position on the mounting table and a first position above the mounting table are spaced apart from each other. A substrate raising / lowering mechanism that raises and lowers between two positions, and a first temperature adjustment unit that supplies a temperature adjustment medium to the temperature adjustment medium flow path, and adjusts the temperature of the substrate to the first temperature at the first position. And a second temperature control unit that emits light of a wavelength that can be absorbed by the substrate from the mounting table side, heats the substrate at the second position with the light, and controls the temperature to the second temperature. A light transmission window provided on the mounting table and transmitting light emitted from the second temperature control unit. Providing a substrate temperature control apparatus according to claim.

  In the substrate temperature adjustment apparatus according to the first aspect, the second temperature adjustment unit is provided below the mounting table, and the light transmission window is a through-hole penetrating from the front surface to the back surface of the mounting table. The light transmission member can be configured to be fitted. In this case, the light transmissive member constituting the light transmissive window includes a first light transmissive member on the upper side and a second light transmissive member on the lower side, and the first light transmissive member and the first light transmissive member. The space between the two light transmission members can function as a part of the temperature control medium flow path. In such a configuration, it is preferable that the temperature adjustment medium is a liquid that transmits light emitted from the second temperature adjustment unit. Examples of such a temperature control medium include a fluorine-based refrigerant or water. In order to effectively control the temperature of the substrate to the first temperature, the surface of the first light transmitting member is preferably provided flush with the surface of the mounting table. More preferably, the transmission member is made of sapphire. On the other hand, the second light transmission member is preferably made of quartz. It is preferable that at least the surface of the mounting table is made of aluminum.

  The second temperature control unit includes a light emitting element array in which a plurality of light emitting elements are mounted on a support, a cooling plate that supports the light emitting element array and cools the light emitting elements, and a power supply that supplies power to the light emitting elements. It can be set as the structure which has a part.

  In a second aspect of the present invention, a substrate processing apparatus that performs a first process at a relatively low first temperature and a second process at a relatively high second temperature with respect to the substrate. And a substrate temperature control device according to the first aspect, provided at a bottom portion of the chamber, and the substrate temperature control device is configured to perform the first processing. There is provided a substrate processing apparatus, wherein the temperature of a substrate is adjusted to the first temperature, and the temperature of the substrate is adjusted to the second temperature during the second processing.

  The substrate processing apparatus according to the second aspect may further include a processing gas supply system that supplies a processing gas to the chamber, and an exhaust unit that exhausts the inside of the chamber. A processing apparatus further comprising a shower head provided at the upper part of the chamber for introducing a processing gas into the chamber, or a processing gas within the chamber provided at the upper part of the chamber. What further has a plasma source to be converted can be exemplified.

  According to the present invention, when the temperature of the substrate is adjusted to the relatively low first temperature, the substrate is positioned at the first position on the mounting table, and the first temperature control unit allows the mounting table to When the temperature adjustment medium is passed through the temperature adjustment medium flow path to adjust the temperature by heat transfer, and the temperature of the substrate is adjusted to a relatively high second temperature, the substrate is separated from the upper side of the mounting table. Positioned at position 2, emits light of a wavelength that can be absorbed by the substrate from the second temperature control unit on the mounting table side, transmits the light through a light transmission window provided on the mounting table, and heats the substrate with the light To do. For this reason, the first temperature control unit and the second temperature control unit can control the temperature of the substrate without affecting each other, and the first temperature and the second temperature in one chamber. The temperature can be changed in a very short time. For this reason, the throughput of processing can be increased. In addition, since both the first temperature control unit and the second temperature control unit can be provided on the mounting table side, when the substrate temperature control device is installed in the chamber of the processing apparatus, the upper portion of the chamber is used for substrate processing. Therefore, the degree of freedom of substrate processing in the chamber can be increased.

It is sectional drawing which shows schematic structure of the substrate temperature control apparatus which concerns on one Embodiment of this invention. It is sectional drawing which expands and shows the cooling heating part used for the board | substrate temperature control apparatus of FIG. It is a disassembled perspective view of the board | substrate temperature control apparatus of FIG. It is the schematic for demonstrating operation | movement of the substrate temperature control apparatus which concerns on one Embodiment of this invention. It is sectional drawing which shows the 1st example of the substrate processing apparatus provided with the substrate temperature control apparatus which concerns on one Embodiment of this invention. It is sectional drawing which shows the 2nd example of the substrate processing apparatus provided with the substrate temperature control apparatus which concerns on one Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

<Configuration of substrate temperature control device>
1 is a cross-sectional view showing a schematic configuration of a substrate temperature control apparatus according to an embodiment of the present invention, FIG. 2 is an enlarged cross-sectional view showing a cooling and heating unit used in the substrate temperature control apparatus of FIG. 1, and FIG. It is a disassembled perspective view of the board | substrate temperature control apparatus of FIG.

  The substrate temperature control apparatus 100 of the present embodiment is provided at the bottom of the chamber of the substrate processing apparatus, and controls the temperature of the substrate to a first temperature that is relatively low temperature and a second temperature that is relatively high temperature. The substrate processing apparatus performs a first process at a first temperature and performs a second process at a second temperature. The substrate processing is not particularly limited, and for example, after performing etching which is the first processing, it is possible to exemplify what performs residue removal which is the second processing. The substrate is not particularly limited, and can be applied to various substrates such as a semiconductor substrate (semiconductor wafer), a flat panel display (FPD) substrate, and a solar cell substrate.

  The substrate temperature control apparatus 100 includes a mounting table 10 on which the substrate S is mounted, and a substrate lifting unit 20 that lifts and lowers the substrate S between a first position on the mounting table and a second position spaced upward. The heating unit 30 that is provided below the mounting table 10 and heats the substrate S with light, the cooling unit 40 that cools the substrate by flowing a coolant through the mounting table 10, and the heating unit 30 that is provided on the mounting table 10. And a plurality of light transmission windows 50 that transmit light from the. The mounting table 10 is supported on the bottom of the chamber by a cylindrical support member 60.

  The mounting table 10 has a two-layer structure of an upper plate 11 having a mounting surface for the substrate S and a lower plate 12 disposed below the upper plate 11. The upper plate 11 is made of a metal material having good thermal conductivity, for example, aluminum, and the lower plate 12 is made of, for example, stainless steel. Inside the mounting table 10, a through hole 51 provided at a position corresponding to the coolant channel 41 and the light transmission window 50 is formed.

  The substrate lifting / lowering unit 20 is inserted into a hole 13 formed in the mounting table 10, and has three support pins 21 (only two are shown in FIG. 1) that support the substrate S, and a support that supports the three support pins. A plate 22 and a drive mechanism 23 that drives the support pin 21 up and down via the support plate 22 are provided. Then, the support pin 21 is immersed in the mounting table 10 by the driving mechanism 23, whereby the substrate S is positioned at the first position on the mounting table 10, and the driving pin 23 protrudes by the driving mechanism 23. The substrate S is located at a second position spaced upward from the mounting table 10. The support pins 21 are also used when the substrate S is delivered. The number of support pins 21 is not limited to three, and a necessary number may be provided according to the size of the substrate S.

  The heating unit 30 heats the substrate S with light emitted from a light emitting diode (LED) that is a light emitting element, and supports a plurality of LED arrays 31 on which a plurality of LEDs are mounted, and the plurality of LED arrays 31. In addition, a cooling plate 32 that cools the LEDs and a power feeding unit 33 that feeds power to each LED array 31 are provided. Other light emitting elements such as a semiconductor laser may be used instead of the LED. Light heating by a light emitting element such as an LED uses not the black body radiation of the heating source but electromagnetic radiation due to recombination of electrons and holes, so that only a substance that absorbs light of that wavelength can be heated. In addition, when heating the substrate, the rate of temperature increase and decrease is fast. As the LED, a light having a wavelength of emitted light in the range of ultraviolet light to near infrared light, for example, 0.36 to 1.0 μm can be used, and a compound based on GaN, GaAs, GaP or the like A semiconductor can be mentioned. A wavelength that does not transmit through the substrate S is selected from such a wavelength range. From such a viewpoint, a near infrared light of 0.8 to 1.0 μm is preferable. In particular, when the substrate S is made of silicon, it can be efficiently heated by such near infrared light.

  Each of the plurality of LED arrays 31 is provided at a position corresponding to the light transmission window 50 of the mounting table 10, and the light emitted from the LED array 31 passes through the light transmission window 50 and is irradiated to the substrate S. The substrate S at position 2 is heated to a relatively high second temperature, for example, about 200 ° C.

  The LED array 31 has a large number of LEDs mounted on a support made of a highly thermally conductive material having insulation properties, for example, AlN ceramics, and the support is entirely cooled by a cooling plate 32 through a bonding material having high thermal conductivity. To come into contact. The cooling plate 32 is made of a metal material having high thermal conductivity, such as copper or aluminum, and has a coolant channel 34 provided therein. A refrigerant supply pipe 35 and a refrigerant discharge pipe 36 are connected to the refrigerant flow path 34, and the refrigerant flow path 34 is made of, for example, water or a fluorine-based liquid (trade name Florinart, Galden, etc.) by a refrigerant circulation mechanism (not shown). The cooling plate 32 is cooled by flowing the coolant, and the LED mounted thereon is cooled by the cold heat through the support body of the LED array 31. Thereby, the fall of the emitted light amount by the temperature rise of LED itself is suppressed.

  A heat insulating plate 38 made of resin such as PTFE is provided between the cooling plate 32 and the mounting table 10, and the cooling plate 32 and the mounting table 10 and the heat insulating plate 38 are in close contact with each other. A hole 38 a is formed in the heat insulating plate 38 in a region corresponding to the LED array 31.

  The cooling unit 40 includes a refrigerant supply pipe 42 and a refrigerant discharge pipe 43 connected to a refrigerant flow path 41 formed in the mounting table 10, and a refrigerant supplied to the refrigerant flow path 41 via the refrigerant supply pipe 42 and the refrigerant discharge pipe 43. And a refrigerant circulation mechanism 44 that circulates and supplies the refrigerant. As the refrigerant, for example, a material that transmits light of a wavelength emitted by the LED, such as a fluorine-based liquid (trade name: Fluorinert, Galden, etc.) or water is preferable. Thus, by supplying the coolant to the coolant channel 41 in the mounting table 10, the substrate S is placed on the mounting table 10 while keeping the mounting table 10 at a first temperature that is relatively low, for example, about 25 ° C. When positioned at the upper first position, the substrate is held at that temperature.

  The light transmission window 50 is provided at a position corresponding to the LED array 31 of the mounting table 10, and has a through hole 51 penetrating from the front surface to the back surface of the mounting table 10, and a first light transmitting member 52 fitted in the through hole 51. And a second light transmission member 53. The through hole 51 is composed of an upper hole 51a formed in the upper plate 11 and a lower hole 51b formed in the lower plate 12, and the first light transmitting member 52 is disposed above the upper hole 51a. The surface is fitted so as to be flush with the surface of the upper plate 11, and the second light transmission member 53 is fitted in the lower hole 51b. A space 54 is formed between the first light transmitting member 52 and the second light transmitting member 53 of the through hole 51, and this space 54 functions as a part of the coolant channel 41. The refrigerant flow path 41 is configured in a single stroke including the space 54, and the cold heat of the refrigerant flowing through the refrigerant flow path 41 is supplied to the substrate S via the first light transmission member 52 in the space 54. In portions other than the space 54, the substrate S is supplied via the upper plate 11.

  In order to control the temperature of the substrate S with high accuracy by bringing the surface temperature of the first light transmission member 52 and the surface of the upper plate 11 close to the refrigerant temperature, the first light transmission member 52 and the upper plate 11 are heated. It is preferable to use a material having high conductivity. For this reason, as the first light transmission member 52, sapphire having a high transmittance in a wide range from the visible light region to the infrared region and a thermal conductivity of 42 W / m · K can be preferably used. As described above, aluminum can be suitably used as the plate 11.

  On the other hand, the second light transmission member 53 and the lower plate 12 are made of a material having a relatively low thermal conductivity from the viewpoint of thermally insulating the lower heating unit 30 and the refrigerant in the refrigerant flow path 41 (space 54) as much as possible. It is preferable. For this reason, as the second light transmission member 53, quartz having a high transmittance in a wide range from the visible light region to the infrared region, but having a thermal conductivity of 1.4 W / m · K and lower than sapphire is preferable. As described above, stainless steel can be suitably used as the lower plate 12. In addition, using quartz as the second light transmitting member 53 is advantageous from the viewpoint of cost.

  As shown in an enlarged view in FIG. 2, the first light transmitting member 52 has a taper 52a having a small diameter on the upper surface side and a large diameter on the bottom surface side, and the upper hole 51a also has a peripheral surface 51c having a shape corresponding to the taper 52a. Is formed. A seal ring 55 is fitted into the peripheral surface 51c, and the upper plate 11 and the first light transmission member 52 are hermetically sealed. The first light transmission member 52 is positioned by the stopper 56 in a state of being fitted in the upper hole 51a. The lower hole 51b has a circumferential step portion 59, and the second light transmitting member 53 is positioned in the lower hole 51b by the step portion 59. The second light transmission member 53 has a circumferential notch 53a at the periphery of the upper surface thereof, and a seal ring 58 is fitted into the notch 53a. A pressing member 57 for pressing the seal ring 58 is screwed to a portion corresponding to the outer peripheral portion. As a result, the lower plate 12 and the second light transmission member 53 are hermetically sealed.

  In the substrate temperature control apparatus 100 of the present embodiment, for example, as shown in an exploded perspective view of FIG. 3, the LED array 31 of the heating unit 30 has a hexagonal shape and is provided with seven pieces. Six of them are arranged circumferentially on the cooling plate 32, and the other one is arranged in the center of the cooling plate 32. In the upper plate 11 and the lower plate 12 constituting the mounting table 10, seven upper holes 51a and lower holes 51b are provided so as to correspond to the LED array 31, respectively. At the time of assembly, the first light transmitting member 52 is fitted into the upper hole 51a of the upper plate 11 from below, and the second light transmitting member 53 is fitted into the lower hole 51b of the lower plate 12 from above. The mounting plate 10 is configured by integrating the lower plate 12, the seven light transmitting windows 50 are formed in the mounting table 10, and the heating unit 30 is attached from below the mounting table 10 through the heat insulating member 38.

<Operation of substrate temperature controller>
Next, the operation of the substrate temperature control apparatus configured as described above will be described with reference to the schematic diagram of FIG.
In the case of performing the first process by adjusting the temperature of the substrate S to a low temperature (for example, 25 ° C.) in the processing chamber of the substrate processing apparatus, the support pins 21 of the substrate lifting unit 20 are raised. After receiving the substrate S from the transfer device (not shown) onto the support pins 21, the support pins 21 are lowered to place the substrate S on the mounting table 10 which is the first position as shown in FIG. Put. At this time, the temperature of the mounting table 10 is adjusted to a temperature in the vicinity of the first temperature by the cooling unit 40. Specifically, the refrigerant is constantly circulated and supplied to the refrigerant flow path 41 in the mounting table 10, whereby the substrate S is moved via the first light transmitting member 52 of the light transmitting window 50 and the upper plate 11. The temperature is adjusted to the first temperature.

  After the first processing at the first temperature is completed, as shown in FIG. 4B, the support pins 21 are raised to position the substrate S at the second position separated from the mounting table 10, and the heating unit 30. The power supply unit 33 supplies power to the LEDs mounted on the LED array 31 and starts light irradiation from the LEDs. The LED transmits the first light transmitting member 52 and the second light transmitting member 53 of the light transmitting window 50 and absorbs near infrared light having a wavelength to be absorbed by the substrate S, for example, 0.8 to 1.0 μm. What emits is used, and the light emitted from the LED passes through the light transmission window 50 and is irradiated onto the substrate S, and the substrate S is rapidly heated. Then, it reaches the second temperature, for example, 200 ° C. in a very short time, and the second treatment is performed at that temperature. At this time, the refrigerant flowing through the refrigerant flow path 41 of the mounting table 10 also flows into the space 54 in the light transmission window 50, and the light flowing from the LED is irradiated with light from the LED, but is emitted from the LED as the refrigerant. By using a liquid that transmits the wavelength of light, for example, a fluorinated liquid (trade name Florinart, Galden, etc.) or water, the temperature of the refrigerant does not change due to light irradiation.

  After the substrate S is thus maintained at the second temperature and the second process is performed, the power supply to the LEDs is turned off by the power supply unit 33 as shown in FIG. And the support pins 21 are lowered to place the substrate S on the mounting table 10 which is the first position, and the temperature of the substrate S is adjusted to the first temperature. Thereafter, the substrate S is carried out of the chamber by a transfer mechanism (not shown). At this time, since the substrate S was heated using electromagnetic radiation, the substrate S was rapidly cooled by turning off the power supply to the LED in this way, and immediately when the substrate S was placed on the mounting table 10. The temperature is adjusted to the first temperature.

  As described above, according to the present embodiment, when the temperature of the substrate S is adjusted to the relatively low first temperature, the substrate S is positioned at the first position on the mounting table 10, When the refrigerant is passed through the mounting table 10 and the cold heat of the refrigerant is transferred to the substrate S, and the temperature is adjusted to a relatively high second temperature, the substrate S is removed from the mounting table 10. Only the board | substrate S is heated using electromagnetic radiation by the light of LED from the mounting base 10 side, making it position in the 2nd position spaced apart, and not affecting the mounting base 10 with heat. For this reason, the cooling unit 40 and the heating unit 30 can be adjusted in temperature without affecting each other, and the temperature change between the first temperature and the second temperature in one chamber is extremely short. Can be done. For this reason, the throughput of processing can be increased.

  Further, since both the cooling unit 40 for adjusting the temperature of the substrate S to the first temperature and the heating unit 30 for adjusting the temperature of the substrate S to the second temperature are on the mounting table 10 side, the substrate temperature adjusting device 100 is provided in the chamber of the processing apparatus. When installed, the upper part of the chamber can be freely used for substrate processing. For example, it is possible to provide a shower head for introducing a gas at the upper part of the chamber or a plasma source at the upper part of the chamber. That is, the degree of freedom of substrate processing in the chamber can be increased.

<Example of substrate processing apparatus provided with substrate temperature control apparatus>
Next, an example of a substrate processing apparatus provided with the substrate temperature control apparatus according to the present embodiment will be described.

(First example)
First, in the first example, a substrate processing apparatus that performs non-plasma etching on a substrate S and then removes residues present on the substrate by heating the substrate S will be described.

  FIG. 5 is a cross-sectional view showing a first example of a substrate processing apparatus provided with a substrate temperature adjusting apparatus according to the present embodiment. The substrate processing apparatus 200 of this example includes a chamber 110 that can be evacuated, and the substrate temperature control apparatus 100 having the above-described configuration at the bottom of the chamber 110. Further, the substrate processing apparatus 200 includes an exhaust unit 120 provided at the bottom of the chamber 110, a shower head 130 provided at the top of the chamber 110, and a processing gas supply system 140 that supplies a processing gas to the shower head 130. Have. A loading / unloading port 111 for loading / unloading the substrate S is provided on the side wall of the chamber 110, and the loading / unloading port 111 is opened and closed by a gate valve 112. In addition, the support member 60 of the substrate temperature adjustment apparatus 100 is attached to the bottom of the chamber 110 via a seal ring 61.

  The exhaust unit 120 includes an exhaust pipe 121 connected to the bottom of the chamber 110, a pressure control valve (APC) 122 provided in the exhaust pipe 121, and a vacuum pump for exhausting the chamber 110 through the exhaust pipe 121. 123.

  The shower head 130 is attached to the top wall of the chamber 110, has a gas inlet 131 at the top thereof, has a gas diffusion space 132 formed therein, and has a number of gas discharge holes 133 at the bottom thereof. Is formed.

Further, the processing gas supply system 140 supplies an etching gas for performing non-plasma etching on a predetermined film on the substrate S, and an inert gas used for purging the inside of the chamber 110 when removing residues by heat. The gas is supplied from the gas inlet 131 into the shower head 130 via 141. Examples of the etching gas include HF gas, F ₂ gas, and NH ₃ gas, and examples of the inert gas include N ₂ gas and Ar gas.

  In the substrate processing apparatus 200 configured as described above, the gate valve 112 is opened, and the substrate S is loaded via the loading / unloading port 111 by a transfer apparatus (not shown), and as described above, the mounting table of the substrate temperature adjustment apparatus 100 After being placed on 10 (first position), the inside of the chamber 110 is adjusted to a predetermined degree of vacuum by the exhaust unit 120. The substrate S on the mounting table 10 is adjusted to a first temperature, for example, 25 ° C. by the refrigerant passed through the cooling unit 40.

  In this state, a predetermined etching gas is supplied from the processing gas supply system 140 to the shower head 130 and is introduced into the chamber 110 through the shower head 130. Thereby, a predetermined film of the substrate S is etched.

  After the etching is completed, an inert gas is introduced into the chamber 110 through the shower head 130 and purged. Then, the introduction of the inert gas is continued to make the inside of the chamber 110 an inert gas atmosphere. Next, the support pins 21 of the substrate elevating unit 20 in the substrate temperature control apparatus 100 are raised, the substrate S is positioned at the second position, light is emitted from the LEDs of the LED array 31 in the heating unit 30, and the substrate S is Heating to a second temperature, for example 200 ° C., removes residues after etching.

  After the residue removal is completed, the substrate S is returned to the first stage 10 and cooled, and then the gate valve 112 is opened, and the substrate cooled by a transfer device (not shown) is carried out from the loading / unloading port 111.

  Thus, since the substrate temperature control apparatus 100 described above is used in the substrate processing apparatus 200, the temperature of non-plasma etching and residue removal can be switched in a very short time to increase the processing throughput. In addition, since the substrate temperature control apparatus 100 is housed in the bottom of the chamber 110 and there are no components of the substrate temperature control apparatus 100 above the chamber 110, the shower head 130 can be provided above the chamber 110. The process gas can be supplied uniformly.

(Second example)
Next, as a second example, a substrate processing apparatus will be described that performs non-plasma etching on the substrate S, then heats the substrate S and generates plasma to ash the substrate.

  FIG. 6 is a cross-sectional view illustrating a second example of the substrate processing apparatus including the substrate temperature adjusting apparatus according to the present embodiment. Since the basic configuration of the substrate processing apparatus 300 of this example is the same as that of the substrate processing apparatus 200, the same parts as those of the substrate processing apparatus 200 are denoted by the same reference numerals, and the description is simplified.

  In this example, a shower head is not provided, a plurality of microwave radiation mechanisms 210 are provided as plasma sources in the upper part of the chamber 110, and a ring-shaped gas introduction part 220 is provided in the upper part of the sidewall of the chamber 110, thereby providing a processing gas supply system. The processing gas from 140 is different from the substrate processing apparatus 200 of FIG. 5 in that the processing gas from 140 is introduced into the chamber 110 through the gas introduction part 220.

  The microwave irradiation mechanism 210 includes a waveguide having a cylindrical coaxial structure that transmits microwaves from a microwave generation unit (not shown), a planar antenna provided at the tip of the waveguide, and a movable waveguide. A microwave is radiated from a dielectric window provided on the front end side of the planar antenna, and microwave plasma is generated in the chamber.

  In the substrate processing apparatus 300 configured as described above, the substrate S is placed on the substrate temperature control apparatus 100 as in the case of the substrate processing apparatus 200, and the temperature of the substrate S is adjusted to a first temperature, for example, 25 ° C. In this state, a predetermined etching gas is introduced from the processing gas supply system 140 into the chamber 110 through the gas introduction unit 220, and a predetermined film of the substrate S is etched.

  Thereafter, after purging the chamber 110, the substrate S is raised to the second position, light is emitted from the LEDs of the LED array 31 in the heating unit 30, and the substrate S is heated to a second temperature, for example, 200 ° C. In both cases, for example, Ar gas as plasma gas is introduced into the chamber 110 from the processing gas supply system 140 via the gas introduction unit 220, and microwaves are irradiated from the microwave radiation mechanism 210 into the chamber 110 to enter the chamber 110. Microwave plasma is generated. As a result, the photoresist and etching residue present on the substrate S are removed by ashing.

  After the ashing is finished, the microwave irradiation is stopped, the substrate S is returned to the mounting table 10 which is the first position and cooled, and then the gate valve 112 is opened to remove the substrate cooled by a transfer device (not shown). Unload from the loading / unloading port 111

  Also in the substrate processing apparatus 300, the substrate temperature control apparatus 100 can switch the temperature of non-plasma etching and ashing residue removal in a very short time to increase the processing throughput. In addition, since the substrate temperature control apparatus 100 is housed in the bottom of the chamber 110 and there are no components of the substrate temperature control apparatus 100 above the chamber 110, a microwave radiation mechanism 210 is provided above the chamber 110. Ashing process can be performed effectively. Note that the number of the microwave radiation mechanisms 210 may be one, and the plasma source is not limited to such a microwave radiation mechanism 210 and may be another plasma source.

<Other applications>
The present invention is not limited to the above-described embodiment, and various modifications can be made within the scope of the idea of the present invention. For example, in the said embodiment, although the example of 25 degreeC and 200 degreeC was shown as 1st temperature and 2nd temperature, not only this but various temperature can be set. Therefore, in the said embodiment, although the refrigerant | coolant was used when controlling to 1st temperature, when 1st temperature is higher than normal temperature, a heating medium can be used instead of a refrigerant | coolant. That is, an appropriate temperature control medium can be used according to the first temperature.

  Further, the number of light transmission windows and LED arrays is not particularly limited, and can be set as appropriate according to the size of the substrate. Further, the configuration of the heating unit is not limited to the above embodiment, and any unit that can irradiate light having a wavelength capable of heating the substrate may be used.

  Furthermore, in the above-described embodiment, an example in which a shower head is provided in the upper part of the chamber of the substrate processing apparatus and an example in which a plasma source is provided have been shown. It can be provided on the top.

  Furthermore, in the above-described embodiment, the substrate processing apparatus performs an etching process at a relatively low first temperature and then performs a process of removing a residue or ashing at a relatively high second temperature. However, the present invention is not limited to this, as long as the first treatment at the relatively low first temperature and the second treatment at the relatively high second temperature are performed on the substrate. The present invention is not limited to this, and the first process may be performed at the first temperature after the second process is performed at the second temperature first.

  Furthermore, in the above-described embodiment, the example in which the substrate is placed on the mounting table when the temperature of the substrate is adjusted to the first temperature has been described. However, the substrate may be brought close to the mounting table.

10; mounting table 11; upper plate 12; lower plate 20; substrate elevating unit 21; support pin 23; drive mechanism 30; heating unit 31; LED array 32; cooling plate 33; 44; Refrigerant circulation mechanism 50; Light transmission window 51; Through hole 52; First light transmission member 53; Second light transmission member 54; Space 60; Support member 110; Chamber 120; Exhaust part 130; Processing gas supply system 200, 300; substrate processing apparatus 210; microwave radiation mechanism 220; gas introduction part S; substrate

Claims (14)

A substrate temperature adjustment device capable of adjusting the temperature of a substrate to a relatively low temperature first temperature and a relatively high temperature second temperature in a chamber of the substrate processing apparatus,
A mounting table on which a substrate is mounted, in which a temperature control medium flow path is formed;
A substrate lifting mechanism that lifts and lowers the substrate between a first position on the mounting table and a second position spaced above the mounting table;
A first temperature control unit that supplies a temperature control medium to the temperature control medium flow path and controls the temperature of the substrate to the first temperature at the first position;
A second temperature control unit that emits light of a wavelength that can be absorbed by the substrate from the mounting table side, heats the substrate at the second position with the light, and controls the temperature to the second temperature;
A substrate temperature control apparatus comprising: a light transmission window provided on the mounting table and configured to transmit light emitted from the second temperature control unit.   The second temperature control unit is provided below the mounting table, and the light transmission window is configured by inserting a light transmitting member into a through hole penetrating from the front surface to the back surface of the mounting table. The substrate temperature control apparatus according to claim 1, wherein the apparatus is a temperature control apparatus.   The light transmissive member constituting the light transmissive window includes a first light transmissive member on the upper side and a second light transmissive member on the lower side, and the first light transmissive member and the second light transmissive member. The substrate temperature control apparatus according to claim 2, wherein a space between the member functions as a part of the temperature control medium flow path.   The substrate temperature control apparatus according to claim 3, wherein the temperature control medium is a liquid that transmits light emitted from the second temperature control unit.   The substrate temperature adjustment apparatus according to claim 4, wherein the temperature adjustment medium is a fluorine-based refrigerant or water.   6. The substrate temperature adjustment apparatus according to claim 3, wherein a surface of the first light transmission member is provided flush with a surface of the mounting table. 7.   The substrate temperature control apparatus according to claim 3, wherein the first light transmission member is made of sapphire.   The substrate temperature control apparatus according to any one of claims 3 to 7, wherein the second light transmission member is made of quartz.   9. The substrate temperature adjusting apparatus according to claim 1, wherein at least a surface of the mounting table is made of aluminum.   The second temperature control unit includes a light emitting element array in which a plurality of light emitting elements are mounted on a support, a cooling plate that supports the light emitting element array and cools the light emitting elements, and a power supply that supplies power to the light emitting elements. 10. The substrate temperature adjustment apparatus according to claim 1, wherein the substrate temperature adjustment apparatus includes a portion. A substrate processing apparatus for performing a first process at a first temperature relatively low on a substrate and a second process at a second temperature relatively high,
A chamber for receiving a substrate;
The substrate temperature adjusting device according to any one of claims 1 to 10, provided at the bottom of the chamber,
The substrate temperature control device adjusts the temperature of the substrate to the first temperature during the first processing, and adjusts the temperature of the substrate to the second temperature during the second processing. Substrate processing apparatus. A processing gas supply system for supplying a processing gas to the chamber;
The substrate processing apparatus according to claim 11, further comprising an exhaust unit that exhausts the inside of the chamber.   The substrate processing apparatus according to claim 12, further comprising a shower head provided at an upper portion of the chamber for introducing a processing gas into the chamber.   The substrate processing apparatus according to claim 12, further comprising a plasma source provided in an upper portion of the chamber for converting a processing gas into plasma in the chamber.

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