200822087 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種記錄媒體，特別是指一種垂直記 錄媒體（perpendicular magnetic recording media) 〇 【先前技術】 以大眾對於資料儲存的需求量與日倶增的現階段而言 ’增加儲存媒體的記錄密度一直是記錄媒體相關領域研發 人員努力的目標之一。 為了增加記錄媒體的記錄密度並使得其可以符合高密 度記錄媒體的要求，不僅需縮小晶粒大小（grain size)以增加 記錄密度，並需具備有良好的隔離度（isolati〇n)以降低晶粒 間因交互耦合作用（intergranular coupling)所產生的雜訊 (noise)干擾，此外，亦需要具備有足夠的磁異向性能$幻以 提供良好的熱穩定性（Ku/kT)。然而，磁性物質的體積太小 時將致使磁異向性能與體積的乘積（KuV)不足以克服外界溫 度所造成的熱擾動，因此，亦造成磁矩不穩定的超順磁現 象（superparamagnetism) 〇 垂直式記錄媒體於記錄位元體積縮小的同時，由於其 磁矩方向是垂直於磁記錄層的層面方向，因而使得垂直式 記錄在更小的記錄位元體積下不致於影響到穩定性。因此 ，以現階段的技術而言，則是利用垂直式記錄以增加磁異 向性能（Ku)並達到熱穩定性的功效，進而突破超順磁現象的 技術瓶頸。雖然使用垂直記錄媒體可解決超順磁現象的問 題，然而，需具備有高矯頑磁場（He)的特性以維持讀寫品質 5 200822087 的咼'丄度Z錄媒體，亦面臨到磁頭因翻轉場（switching fieid ，簡稱Hs)過高而不易寫入的問題。 芩閱圖1，us 2005/004248Θ公開案揭示一種磁性記錄 媒體1及其製作方法。該磁性記錄雜丨沿—疊置方向X 包a •一非磁性基材10、一由Cr所製成之附著層11、一由 辦化鎳（NiP)戶斤製成的晶種層（seed iayer) 12、—由Cr所製成 的第一底層13、一由鈷基合金所製成之第二底層14、一由 鈷鉻鈕（CoCrTa)合金所構成之非磁性中間層15、一由鈷基 合金所構成之鐵磁性（ferr〇niagnetic)層μ、一由含有氮（N) 的釕（Ru)所構成且厚度為〇·8 nm之非磁性耦合（⑶叩η叩)層 17、一由鈷基合金所構成之磁性記錄層18、一保護膜Μ及 一潤滑層20。 該磁性記錄媒體1之非磁性耦合層17的製作方法主要 是固定該非磁性_合層17的厚度，並於形成該非磁性搞合 層17的過程中控制氮氣（Ν2)的分壓藉以改變該非磁性耦合 層17内的Ν含量。該鐵磁性層16與磁性記錄層18兩者間 之父互耦合作用力，則是因該非磁性耦合層17内部不同的 氮含量而有所調整；其中，該磁性記錄媒體丨的訊雜比 (Signal-t〇-n〇ise rati0，以下簡稱SNR)& Hc值分別是隨著 N2分壓的增加而增加及下降。 在Ν,分壓為〇.037 Pa時，交互耦合場（exehange coupling field)達最大值，Hc值下降至3〇〇〇奥斯特（〇中且 SNR值於307 kFCI的記錄密度下約為14·7犯。 雖然該磁性記錄媒體i藉由調整該非磁性耦合層i7内 6 200822087 的氮含量可增加其SNR值，然而，於形成該非層性麵合層 17的過程中增加N2的分壓亦使得其He值的特性下降，因 此，亦影響該磁性記錄媒體1之磁矩的熱穩定性；此外， 該磁性記錄媒體1亦因該鐵磁性層16及磁性記錄層18之 磁矩方向皆平行於各層的平面，且存在一反鐵磁性 (antiferromagnetic)交互耦合作用力，因此，使得該磁性記 錄媒體1之磁矩的翻轉現象較為複雜；再者，此種水平記 錄式的磁性記錄媒體1與垂直記錄式的記錄媒體相比較之 下，亦容易形成雜訊並提高讀取的困難度；另，此種水平 5己錄式的磁性記錄媒體1之記錄密度仍無法符合垂直記錄 媒體對於焉記錄密度的要求。 參閱圖2，W02004/090874公開案揭示一種磁記錄媒體 2，包含：一基材21、一形成於該基材21的軟磁層22、一 ^/成於5亥軟磁層22上的定向控制層（orientati〇n_c〇ntr〇iiing layer)23、一形成於該定向控制層23上的垂直磁性膜24、 一形成於該垂直磁性膜24上的保護層25，及一形成於該保 遵層25上的潤滑層26。該垂直磁性層24具有一含有鉑（pt) 及氧化物的鈷基（Co-based)材料之磁性層241，及一含有鉻 (Cr)且無氧化物的始基材料之磁性層242。 該磁記錄媒體2主要是藉由該磁性層241辅助上方的 磁性層242之晶粒大小均勻化並增加該磁性層242之結晶 度。 另，參閱圖3，W02004/090874公開案亦揭示另一種磁 圯錄媒體2’，大致上是雷同於該磁記錄媒體2，其不同處僅 7 200822087 在於該垂直記錄膜24具有二未含有氧化物之純材料的磁 性層243、二分別疊置於該等磁性層243上並含有氧化物的 #基材料之磁性層244’及二分別夾置於該等磁性層⑷之 間及該等磁性層244之間的非磁性層245。該等非磁性層 245是呈六方密堆積(峋)結構並可辅助該等磁性層243、 244沿c軸定向成長的釕(Ru)、銖_、鈦㈤、釔⑺、铪 (Hf)，及辞（Zn)等。 ,前述此等磁記錄媒體2、2，雖然具備有讀值高、熱 穩定性佳及記錄密度大等特點，然而，最令垂直記錄媒體 相關領域者所困擾的，仍是因垂直記錄媒體的&值過高而 存在有磁頭不易寫入的問題。 因此，在達到高記錄密度之記錄特性的情況下，亦需 同日守解決翻轉場過大的問翻 a彳丄 付穷、入妁問碭，疋垂直記錄媒體相關領域者 所待克服的課題之一。 【發明内容】 因此’本發明之目的’即在提供—垂直記錄媒體。 於是，本發明垂直記錄媒體，包含：一基材、—形成 於該基材的稷合式磁記錄膜、一夹置於該基材與複合式磁 δ己錄膜之間的定向成長辅助膜；及一夾置於該基材與該定 向成長辅助膜之間的軟磁膜。 該複合式磁記錄膜具有一第-記錄層、-夹置於該第 :記錄層與該基材之間且厚度是介於〇 2 nm〜5 之間的 f互耦合層，及一夾置於該交互耦合層及基材之間的第二 。己錄層。言亥第一記錄層是呈垂直異向性㈣如也uiar 8 200822087 anisotropy)之硬磁性（hard magnetic)及軟磁性（soft magnetic) 其中一者；該第二記錄層是呈垂直異向性之硬磁性及軟磁 性其中另一者。 本發明之功效在於，使得垂直記錄媒體在達到高記錄 密度的記錄特性之情況下，亦可同時降低翻轉場並解決磁 頭不易寫入的窘境。 【實施方式】 <發明詳細說明> 參閱圖4，本發明之垂直記錄媒體的一較佳實施例，包 含· 一基材3、一形成於該基材3的複合式磁記錄膜4、一 夾置於該基材3與複合式磁記錄膜4之間的定向成長輔助 膜5，及夾置於該基材3與該定向成長輔助膜5之間的軟 磁膜6。 該複合式磁記錄膜4具有一第一記錄層41、一夾置於 忒第一圮錄層41與該基材3之間的交互耦合層42，及一夾 置於該交互耦合層42及基材3之間的第二記錄層43。該第 一記錄層41是呈垂直異向性之硬磁性及軟磁性其中一者； 該第二記錄層43是呈垂直異向性之硬磁性及軟磁性其中另 一者0 值得-提的是，當該交絲合層42的厚度過大時，該 等記錄層41、43將因傳輸距離過遠而影響電子的傳輸^ 並等記錄層41、43彼此間無交互輕合料力狀 ’當該交互輕合層42的厚度不足時，亦難以預測該等 層4卜43間_合作用力；因此，適合於本發明該交互轉 9 200822087 合層^的厚度是介於…請〜^之間：且’適用於本發 明之交互n合層42是選自下列所構成之群組：峰u)、鍊 (Re)、铑（Rh)、鉻（Cr)、銅（Cu)、鉑（pt)、鈀（pt)、金（A"、 銀（Ag)、銥（ir)，及此等之一組合。 更值得一提的是，該第一、二記錄層41、43雖然在該 乂互耦a層42的厚度是介於1〇 nm〜5〇 nm之間的條件下 ，而存在有局部的鐵磁性交互耦合作用力及反鐵磁性交互 搞合作用力，但與前述us 2削_2彻公開案所提之磁性 記錄媒體1相較之下，本發明該較佳實施例因該第一、二 .己錄層41、43 &呈垂直異向性且具鐵磁性交互輕合而使得 其翻轉現象較不複雜，此外，更可藉由垂直記錄式的機制 以增加記錄密度。 又更值得一提的是，當該交互耦合層42的厚度是介於 〇·2χπη〜i nm之間時，該第一、二記錄層41、们則可因藉 由該交互耦合層42傳遞交互彈性（exchang卜spdng)耦合力曰（ 即’改變該等記錄層41、43之交互编合常數）而形成交互彈 性耦合，並使得該等記錄層41、43内之各磁矩的排列方向 呈現正向平行；較佳地，該交互耦合層42的厚度是介於 〇·2 nm 〜0.7 nm 之間。 在本發明之該較佳實施例中，適合於本發明之第一、 二記錄層41、43的厚度是介於1 nm〜40 nm之間；另，由 於鈷（Co)元素的易軸是平行於晶格（1^以勾的c軸且垂直於 膜面方向，因此，適合於本發明之第一、二記錄層Μ、U 分別是一鈷基材料。 10 200822087 較佳地，該第一記錄層41的矯頑磁場是大於該第二記 錄層4 3的繞頑磁場；該第一記錄層41的厚度是大於該第 二記錄層43的厚度；更佳地，該第一記錄層41是呈垂直 異向性之硬磁性（即，He値至少大於3000高斯），該第二記 錄層43是呈垂直異向性之軟磁性（即，He値至少小於3000 南斯）。 適用於本發明之鈷基材料是由一呈六方晶結構的顆粒 狀（granular)磁記錄材料所構成，一般可使用摻有氧化物的 鈷基材料，例如：摻有氧化矽的鈷基鉑鉻合金（CoPtCr-Si02) :又更佳地，在使用一組成比例（原子百分比）為 {(C〇9〇Cri〇)i〇〇_xPtx}i〇〇_Y_(Si〇2)Y 的革巴材’且以 15 mTorr 〜50 mTorr的工作壓力（working pressure)及約100 W的革巴材輸出 功率之條件下實施直流磁控錢鍵（DC magnetron sputtering) 以製作該等記錄層41、43時，該第一記錄層41的厚度是 介於15 nm〜40 nm之間，該第二記錄層43的厚度是介於1 nm〜15 nm之間，其中，該乾材之原子百分比中的 X=15〜30 ， Y=5〜15 。 值得一提的是，適用於本發明之鈷基材料亦可以是選 自下列所構成之群組的多層膜結構：（Co/Pd)n、（Co/Pt)n、 (FeCo/Pd)n，或（FeCo/Pt)n，其中，η是介於1〜20的整數； 另，適用於本發明之姑基材料亦可以是呈非晶（amorphous) 態的CoX合金或FeCoX合金，其中，X是選自下列所構成 之群組：铽（Tb)、釓（Gd)、鏑（Dy)、钽（Ta)、铪（Hf)，及此 等之一組合。 11 200822087 較佳地，該定向成長輔助膜5具有一提供該第一、二 記錄層41、43沿著一垂直於該基材3的織構方向y呈定向 織構（orientation texture)且晶體結構為六方晶系的晶種層51 、一夾置於該軟磁膜6與晶種層51之間並提供該晶種層51 沿該織構方向y成長且呈面心立方（fee)晶系的緩衝層52, 及一夾置於該軟磁膜6與該緩衝層52之間並呈非晶態的中 間層53。 適用於本發明之中間層53是選自於下列所構成之群組 :铽、釓、鏑、钽、铪，及此等之一組合；該晶種層51是 選自下列所構成之群組：釕（Ru)、鈦（Ti)、銖（Re)、锇（Os) 、鉻（Cr)、辞（Zn)、鍅（Z〇、鉻（Tc)、鎂（Mg)、铑（Rh)、鎢 (W)及此等之一組合；該缓衝層52是選自於下列所構成之 群組：鉑（Pt)、鈀（Pd)、銅（Cu)、金（Au)、銀（Ag)及此等之 一組合；該軟磁膜6是由選自於下列所構成之群組的合金 所製成：鈷鍅鈕（CoZrTa)、鈷鍅鈮（CoZrNb)、鈷鐵（CoFe)、 鈷鐵氮（CoFeN)、鈷鐵硼（CoFeB)、鐵鈕碳（FeTaC)、鐵鋁矽 (FeAlSi)、鎳鐵（NiFe)及鎳磷（NiP)。 較佳地，該中間層53是铽，且該中間層53的厚度是 介於2 nm〜12 nm之間；該晶種層51的厚度是介於5 nm〜 40 nm之間。 <具體例> 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之一具體例的詳細說明中，將可清楚的 呈現。 12 200822087 在本發明被詳細描述之前，要注意的是，在以下的說 明内容中，類似的元件是以相同的編號來表示。 再參閱圖4，在本發明垂直記錄媒體之一具體例中，該 基材3是由矽所製成、該第一記錄層41是厚度約為30 nm 之摻有氧化矽的鈷基鉑鉻合金（CoPtCi*-Si02)、該交互耦合層 42是厚度約為0.5 nm的Ru、該第二記錄層43是厚度約為 5 nm的CoPtCr-Si02、該晶種層51是厚度為20 nm且呈 hep結構的Ru、該緩衝層52是厚度約為7 nm且呈fee結構 的Pt、該中間層53是厚度約為3 nm且呈非晶質的Tb，該 軟磁膜6是由厚度約為200 nm〜400 nm的CoZrTa合金所 製成；本發明自該基材3沿該織構方向y的膜層結構依序 為：Si/CoZrTa/Tb/Pt/Ru/CoPtCr-Si02/Ru/CoPtCr_Si02。 本發明該具體例之垂直記錄媒體的製作方法，是簡單 地說明於下。 將一經過標準清洗流程的矽晶圓設置於一直流磁控濺 鍍系統中，以在該矽晶圓上形成由CoZrTa合金所構成的該 軟磁膜6。 進一步地，維持該直流磁控濺鍍系統的工作壓力為3 mTorr，並對一由Tb所構成的革巴材（target)施予30 W的輸出 功率，以在該軟磁膜6上形成該中間層53。接著，分別維 持7 mTorr及20 mTorr的工作壓力，並分別對一 Pt把材及 一 Ru靶材施予100 W及125 W的輸出功率，以於該軟磁膜 6上依序形成該緩衝層52及該晶種層51。 另，維持該直流磁控濺鍍系統的工作壓力為30 mTorr 13 200822087 ，並對一 CoPtCr-Si〇2複合靶材施予1〇〇 w的輸出功率，進 而在該晶種層51上形成該第二記錄層4;3，其中，节 CoPtCr-Si〇2複合靶材是由台灣贺利氏材料科技股份有限公 司（Heraeus Materials Technology)所製作，其組成比例（原子 百分比）為{(C〇9〇Cr10)100.xPtx}10()-Y_(si〇2)Y，χ=15〜3〇， Υ=5〜15 〇 進一步地，維持該直流磁控濺鍍系統的工作壓力為 mTorr並對該RU靶材施予125 w的輸出功率以在該第二記 錄層43上形成該交互耦合層42;最後，利用相同於該第二 記錄層43的製程參數於該交互耦合層42上形成該第一記 錄層41。 <比較例> 在本發明垂直記錄媒體的一比較例中，大致上是雷同 於該具體例，其不同處是在於省略掉該交互耦合層42及該 第二記錄層43,且其目的是在於測量該第一記錄層41的200822087 IX. Description of the Invention: [Technical Field] The present invention relates to a recording medium, and more particularly to a perpendicular magnetic recording media. [Prior Art] Demand for data storage and daily use by the public At this stage of the increase, 'increasing the recording density of storage media has always been one of the goals of R&D personnel in the field of recording media. In order to increase the recording density of the recording medium and make it conform to the requirements of high-density recording media, it is necessary not only to reduce the grain size to increase the recording density, but also to have a good isolation (isolati〇n) to lower the crystal. Noise interference caused by intergranular coupling between particles, in addition, sufficient magnetic anisotropy performance is required to provide good thermal stability (Ku/kT). However, if the volume of the magnetic substance is too small, the product of magnetic anisotropy performance and volume (KuV) will not be sufficient to overcome the thermal disturbance caused by the external temperature, and therefore, the superparamagnetism of the magnetic moment is unstable. The recording medium reduces the volume of the recording bit, and since the direction of the magnetic moment is perpendicular to the plane direction of the magnetic recording layer, the vertical recording does not affect the stability under a smaller recording bit volume. Therefore, in the current stage of technology, vertical recording is used to increase the magnetic anisotropy performance (Ku) and achieve thermal stability, thereby breaking the technical bottleneck of superparamagnetic phenomena. Although the use of perpendicular recording media can solve the problem of superparamagnetic phenomenon, however, it is necessary to have the characteristics of high coercive magnetic field (He) to maintain the read and write quality 5 200822087 咼 '丄Z recording media, also facing the head due to flipping The problem of switching fieid (Hs) is too high to be easy to write. Referring to Fig. 1, a publication of the US 2005/004248 discloses a magnetic recording medium 1 and a method of fabricating the same. The magnetic recording hybrid along the stacking direction X includes a non-magnetic substrate 10, an adhesion layer 11 made of Cr, and a seed layer made of nickel (NiP). Iayer) 12, a first bottom layer 13 made of Cr, a second bottom layer 14 made of a cobalt-based alloy, a non-magnetic intermediate layer 15 made of a cobalt-chromium button (CoCrTa) alloy, a ferromagnetic (ferr〇niagnetic) layer μ composed of a cobalt-based alloy, a non-magnetically coupled ((3)叩η叩) layer 17 made of ruthenium (Ru) containing nitrogen (N) and having a thickness of 〇·8 nm, A magnetic recording layer 18 composed of a cobalt-based alloy, a protective film and a lubricating layer 20. The non-magnetic coupling layer 17 of the magnetic recording medium 1 is mainly formed by fixing the thickness of the non-magnetic layer 17 and controlling the partial pressure of nitrogen (Ν2) during the formation of the non-magnetic layer 17 to change the non-magnetic property. The content of germanium in the coupling layer 17. The mutual mutual coupling force between the ferromagnetic layer 16 and the magnetic recording layer 18 is adjusted by the different nitrogen content inside the non-magnetic coupling layer 17; wherein the magnetic recording medium has a signal-to-noise ratio ( Signal-t〇-n〇ise rati0, hereinafter referred to as SNR) & Hc values increase and decrease with increasing N2 partial pressure, respectively. In Ν, when the partial pressure is 〇.037 Pa, the exehange coupling field reaches the maximum value, and the Hc value drops to 3 〇〇〇 Oersted (the SNR value is about 307 kFCI at the recording density). 14.7. Although the magnetic recording medium i can increase the SNR value by adjusting the nitrogen content of the 6200822087 in the non-magnetic coupling layer i7, the partial pressure of N2 is increased during the formation of the non-layered surface layer 17. The characteristics of the He value are also lowered, and therefore, the thermal stability of the magnetic moment of the magnetic recording medium 1 is also affected. Further, the magnetic recording medium 1 is also in the magnetic moment direction of the ferromagnetic layer 16 and the magnetic recording layer 18. Parallel to the plane of each layer, and there is an antiferromagnetic interaction coupling force, so that the magnetic moment of the magnetic recording medium 1 is complicated to be reversed; further, the horizontal recording type magnetic recording medium 1 Compared with the perpendicular recording type recording medium, it is easy to form noise and improve the difficulty of reading; in addition, the recording density of the magnetic recording medium 1 of such a level 5 recording type still cannot conform to the vertical recording medium pair. The recording density requirement is as follows. Referring to FIG. 2, the publication of WO2004/090874 discloses a magnetic recording medium 2 comprising: a substrate 21, a soft magnetic layer 22 formed on the substrate 21, and a soft magnetic layer formed in the 5th An orientation control layer (22), a vertical magnetic film 24 formed on the alignment control layer 23, a protective layer 25 formed on the vertical magnetic film 24, and a formation a lubricating layer 26 on the protective layer 25. The vertical magnetic layer 24 has a magnetic layer 241 of a cobalt-based (Co-based) material containing platinum (pt) and an oxide, and a chromium-containing (Cr)-free layer. The magnetic layer 242 of the starting material of the oxide. The magnetic recording medium 2 is mainly made to uniformize the crystal grain size of the magnetic layer 242 above the magnetic layer 241 and increase the crystallinity of the magnetic layer 242. 3. The publication of WO2004/090874 also discloses another magnetic recording medium 2' which is substantially identical to the magnetic recording medium 2, the difference being only 7 200822087 in that the perpendicular recording film 24 has two pure materials which do not contain oxides. The magnetic layers 243 and 2 are respectively stacked on the magnetic layers 243 And a magnetic layer 244' containing two oxide materials and two non-magnetic layers 245 sandwiched between the magnetic layers (4) and the magnetic layers 244. The non-magnetic layers 245 are hexagonal Stacking (峋) structure and assisting the magnetic layers 243, 244 to grow along the c-axis, such as ruthenium (Ru), 铢_, titanium (f), yttrium (7), yttrium (Hf), and Zn (Zn), etc. The magnetic recording media 2 and 2 have characteristics such as high reading value, good thermal stability, and high recording density. However, the most common problems in the field of perpendicular recording media are due to the & value of the perpendicular recording medium. Too high and there is a problem that the magnetic head is not easy to write. Therefore, in the case of achieving the recording characteristics of high recording density, it is also necessary to solve the problem that the flipping field is too large, and that one of the subjects to be overcome in the field of vertical recording media is to be solved. . SUMMARY OF THE INVENTION Therefore, the object of the present invention is to provide a perpendicular recording medium. Therefore, the perpendicular recording medium of the present invention comprises: a substrate, a kneading magnetic recording film formed on the substrate, and a directional growth auxiliary film sandwiched between the substrate and the composite magnetic δ recording film; And a soft magnetic film sandwiched between the substrate and the oriented growth auxiliary film. The composite magnetic recording film has a first recording layer, an inter-coupling layer sandwiched between the first recording layer and the substrate, and having a thickness of between 〇2 nm and 5, and a sandwich The second between the alternating coupling layer and the substrate. Recorded layer. The first recording layer of Yanhai is one of hard magnetic and soft magnetic which is vertical anisotropy (4) uiar 8 200822087 anisotropy); the second recording layer is vertically anisotropic The other of hard magnetic and soft magnetic. The effect of the present invention is that, in the case where the recording medium of a high recording density is achieved by the perpendicular recording medium, the flipping field can be simultaneously reduced and the dilemma in which the head is difficult to write can be solved. [Embodiment] <Detailed Description of the Invention> Referring to Figure 4, a preferred embodiment of the perpendicular recording medium of the present invention comprises a substrate 3, a composite magnetic recording film 4 formed on the substrate 3, An oriented growth assisting film 5 interposed between the substrate 3 and the composite magnetic recording film 4, and a soft magnetic film 6 interposed between the substrate 3 and the oriented growth assisting film 5. The composite magnetic recording film 4 has a first recording layer 41, an inter-coupling layer 42 interposed between the first recording layer 41 and the substrate 3, and a sandwiching layer 52 and A second recording layer 43 between the substrates 3. The first recording layer 41 is one of hard magnetic and soft magnetic which is perpendicularly anisotropic; the second recording layer 43 is hard magnetic and soft magnetic which is perpendicular to the anisotropy, and the other one is worthwhile. When the thickness of the interlaced layer 42 is too large, the recording layers 41, 43 will affect the transmission of electrons due to the long transmission distance, and the recording layers 41, 43 have no interaction lightly with each other. When the thickness of the interactive light-bonding layer 42 is insufficient, it is also difficult to predict the cooperation between the layers 4 and 43; therefore, it is suitable for the present invention. The thickness of the layer is between... Please And the 'interactive n-layer 42 suitable for use in the present invention is selected from the group consisting of: peak u), chain (Re), rhodium (Rh), chromium (Cr), copper (Cu), platinum (pt ), palladium (pt), gold (A", silver (Ag), 铱 (ir), and one of these combinations. It is worth mentioning that although the first and second recording layers 41, 43 are in the 乂The thickness of the mutual coupling a layer 42 is between 1 〇 nm and 5 〇 nm, and there is a local ferromagnetic interaction force and antiferromagnetic interaction. However, in contrast to the magnetic recording medium 1 of the aforementioned U.S. Patent Application Publication No. 2, the preferred embodiment of the present invention has vertical anisotropy due to the first and second recording layers 41, 43 & Moreover, the ferromagnetic interaction is light and the flipping phenomenon is less complicated, and in addition, the recording density can be increased by a perpendicular recording mechanism. It is also worth mentioning that when the thickness of the alternating coupling layer 42 is When between χ2χπη~i nm, the first and second recording layers 41, by which the interactive coupling layer 42 can transmit an interactive elasticity (exchanging spdng) coupling force 即 (ie, 'changing the recording layers 41, 43 interaction constants) to form an interactive elastic coupling, and the direction of arrangement of the magnetic moments in the recording layers 41, 43 is forward parallel; preferably, the thickness of the alternating coupling layer 42 is Between 2 nm and 0.7 nm. In the preferred embodiment of the present invention, the thickness of the first and second recording layers 41, 43 suitable for the present invention is between 1 nm and 40 nm; Because the easy axis of the cobalt (Co) element is parallel to the crystal lattice (1^ is the c-axis of the hook and perpendicular to the film surface Therefore, the first and second recording layers Μ, U which are suitable for the present invention are respectively a cobalt-based material. 10 200822087 Preferably, the coercive magnetic field of the first recording layer 41 is larger than the second recording layer 43. The surrounding magnetic field; the thickness of the first recording layer 41 is greater than the thickness of the second recording layer 43; more preferably, the first recording layer 41 is hard magnetically perpendicular to the anisotropy (ie, He値 is at least greater than 3000 gauss), the second recording layer 43 is soft magnetically perpendicular to the anisotropy (i.e., He 値 is at least less than 3000 nes). The cobalt-based material suitable for use in the present invention is composed of a hexagonal crystal structure ( Granularly composed of a magnetic recording material, generally a cobalt-based material doped with an oxide, for example, a cobalt-based platinum-chromium alloy doped with cerium oxide (CoPtCr-Si02): and more preferably, a composition ratio (atom) The percentage is {{C〇9〇Cri〇)i〇〇_xPtx}i〇〇_Y_(Si〇2)Y of the leather material' and the working pressure of 15 mTorr to 50 mTorr and about DC magnetron sputtering is performed under the condition of 100 W of gray cloth output power. When the recording layers 41 and 43 are recorded, the thickness of the first recording layer 41 is between 15 nm and 40 nm, and the thickness of the second recording layer 43 is between 1 nm and 15 nm. X=15~30, Y=5~15 in the atomic percentage of dry materials. It is worth mentioning that the cobalt-based material suitable for use in the present invention may also be a multilayer film structure selected from the group consisting of (Co/Pd)n, (Co/Pt)n, (FeCo/Pd)n. Or (FeCo/Pt)n, wherein η is an integer of from 1 to 20; in addition, the agglomerate material suitable for use in the present invention may also be an amorphous or a CoCo alloy or an FeCoX alloy, wherein X is a group selected from the group consisting of Tb, Gd, Dy, Ta, Hf, and combinations thereof. 11200822087 Preferably, the directional growth auxiliary film 5 has an orientation texture and a crystal structure which provides the first and second recording layers 41, 43 along a texture direction y perpendicular to the substrate 3. a seed layer 51 of a hexagonal system, a sandwich between the soft magnetic film 6 and the seed layer 51, and providing the seed layer 51 to grow along the texture direction y and having a face-centered feie system The buffer layer 52, and an intermediate layer 53 interposed between the soft magnetic film 6 and the buffer layer 52 and in an amorphous state. The intermediate layer 53 suitable for use in the present invention is selected from the group consisting of ruthenium, osmium, iridium, osmium, iridium, and the like; the seed layer 51 is selected from the group consisting of : ruthenium (Ru), titanium (Ti), ruthenium (Re), osmium (Os), chromium (Cr), bismuth (Zn), bismuth (Z 〇, chromium (Tc), magnesium (Mg), 铑 (Rh) Tungsten (W) and a combination thereof; the buffer layer 52 is selected from the group consisting of platinum (Pt), palladium (Pd), copper (Cu), gold (Au), silver ( Ag) and a combination thereof; the soft magnetic film 6 is made of an alloy selected from the group consisting of CoZrTa, CoZrNb, CoFe, and CoFe Cobalt iron nitrogen (CoFeN), cobalt iron boron (CoFeB), iron button carbon (FeTaC), iron aluminum lanthanum (FeAlSi), nickel iron (NiFe), and nickel phosphorus (NiP). Preferably, the intermediate layer 53 is ruthenium. And the thickness of the intermediate layer 53 is between 2 nm and 12 nm; the thickness of the seed layer 51 is between 5 nm and 40 nm. <Specific Example> The foregoing and other aspects of the present invention Technical content, features and effects, in the following detailed examples of a specific example In the description, it will be clearly presented. 12 200822087 Before the present invention is described in detail, it is noted that in the following description, similar elements are denoted by the same reference numerals. In one specific example of the perpendicular recording medium, the substrate 3 is made of tantalum, and the first recording layer 41 is a ruthenium-doped cobalt-based platinum-chromium alloy (CoPtCi*-SiO2) having a thickness of about 30 nm. The alternating coupling layer 42 is Ru having a thickness of about 0.5 nm, the second recording layer 43 is CoPtCr-SiO 2 having a thickness of about 5 nm, and the seed layer 51 is Ru having a thickness of 20 nm and having a hep structure, the buffer The layer 52 is Pt having a thickness of about 7 nm and having a feel structure, the intermediate layer 53 is an amorphous Tb having a thickness of about 3 nm, and the soft magnetic film 6 is a CoZrTa alloy having a thickness of about 200 nm to 400 nm. The film structure of the present invention from the substrate 3 along the texture direction y is: Si/CoZrTa/Tb/Pt/Ru/CoPtCr-SiO2/Ru/CoPtCr_SiO2. The vertical form of the specific example of the present invention The method of making the recording medium is simply explained below. A silicon wafer that has undergone a standard cleaning process is always placed. In the magnetron sputtering system, the soft magnetic film 6 made of CoZrTa alloy is formed on the germanium wafer. Further, the operating pressure of the DC magnetron sputtering system is maintained at 3 mTorr, and one is controlled by Tb. The constructed target is applied with an output power of 30 W to form the intermediate layer 53 on the soft magnetic film 6. Then, the working pressures of 7 mTorr and 20 mTorr are respectively maintained, and the output power of 100 W and 125 W is applied to a Pt material and a Ru target, respectively, to sequentially form the buffer layer 52 on the soft magnetic film 6. And the seed layer 51. In addition, the operating pressure of the DC magnetron sputtering system is maintained at 30 mTorr 13 200822087, and a CoPtCr-Si〇2 composite target is subjected to an output power of 1 〇〇w, and the layer is formed on the seed layer 51. The second recording layer 4; 3, wherein the CoPtCr-Si〇2 composite target is produced by Taiwan Heraeus Materials Technology, and its composition ratio (atomic percentage) is {(C〇) 9〇Cr10)100.xPtx}10()-Y_(si〇2)Y, χ=15~3〇, Υ=5~15 〇 Further, the working pressure of the DC magnetron sputtering system is maintained at mTorr and Applying an output power of 125 w to the RU target to form the inter-coupling layer 42 on the second recording layer 43; finally, forming the same on the inter-coupling layer 42 using process parameters identical to the second recording layer 43 The first recording layer 41. <Comparative Example> In a comparative example of the perpendicular recording medium of the present invention, substantially the same as the specific example, the difference is that the cross-coupling layer 42 and the second recording layer 43 are omitted, and the purpose thereof Is to measure the first recording layer 41
He値大小，並比對該複合式磁性記錄膜4整體的Η。値及 Hrsw 値。 <分析數據> 另，值得一提的是，該軟磁膜6於垂直記錄媒體中的 要功用，僅是在於提供磁通量形成封閉型的迴路並提昇 2入的磁場效率，而與本發明相關之磁性等分析將不受該 ，磁膜6的影響，因此，本發明以下圖5〜圖7等分析數據 疋在未夾置有該軟磁膜6的條件下分析。 ^ ’图 5 由磁化 3： (magnetic polarization，Μ 值）對外 14 200822087 加磁場（magnetic field，Η值）所作的磁滯迴路（magnetic hysteretic loop)曲線圖顯示可知，該比較例之He値高達 4500 Oe 左右。 參閱圖6，本發明該具體例是藉由該交互耦合層42傳 遞交互彈性耦合力而形成交互彈性耦合，並使得該等記錄 層41、43内之各磁矩的排列方向呈現正向平行。該複合式 磁記錄膜4整體上的He値雖然下降至3800 Oe，但本發明 該具體例是利用該第一記錄層41作為主要記錄層，因此， 由該比較例之He値（約4500 Oe)可知，本發明用來作為主 要記錄用的第一記錄層41不僅維持有較高的He値以符合 垂直記錄媒體對熱穩定性的要求之特性；同時，亦透過該 第二記錄層43以作為輔助記錄的功用，進而降低該複合式 磁記錄膜4之整體He値並減少該具體例之去磁態翻轉場 (remanent switching field » 簡稱 Hrsw 値）。 在本發明中，是分別先對該具體例及比較例施予外加 磁場以使得該具體例及比較例分別達飽和磁化量（saturation magnetization)，進一步地，逐漸降低外加磁場並使外加磁 場反向增加至一特定外加磁場值再予以去除，此時磁化量 則自動地恢復至零，因此，該特定外加磁場值被定義為 Hrsw 值0 參閱圖7，由去磁態翻轉場（Hrsw)對外加磁場方向與膜 面方向之夾角的曲線關係圖顯示可知，該比較例的Hrsw値 仍高達約4700 Oe，反觀該具體例的Hrsw値已下降至3900 Oe左右；此外，由圖 7顯示可知，該比較例的β值 15 200822087 (^ΪΓ1<Χ)%)高達23.9 %，反觀該具體例，p値明顯下降至 12.8 %，顯示出該具體例對於晶體易軸方向在空間_之分佈 角度的敏感度較低。 綜觀上述，本發明垂直記錄媒體在達到高記錄密度的 記錄特性之情況下’亦可同時降低翻轉場並解決磁頭不易 寫入的窘境，確實達到本發明之目的。 惟以上所述者，僅為本發明之較佳實施例而已，當不 月b以此限疋本發明實施之範圍，即大凡依本發明申請專利 範圍及發明說明内容所作之簡單的等效變化與修飾，皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1疋一正視示意圖’說明US 2005/0042480公開案所 揭示的一種磁性記錄媒體； 圖2是一局部剖視示意圖，說明W02004/090874公開 案所揭示的一種磁記錄媒體； 圖3是一局部剖視示意圖，說明W02004/090874公開 案所揭示的另一種磁記錄媒體； 圖4是一正視示意圖，說明本發明垂直記錄媒體的一 較佳實施例； 圖5是一磁化量（M)對外加磁場（H)曲線圖，說明一比較 例之磁滯迴路曲線圖； 圖6是一磁化量（M)對外加磁場（H)曲線圖，說明本發明 垂直記錄媒體的一具體例之磁滯迴路曲線；及 圖7是一去磁態翻轉場（Hrsw)對外加磁場方向與膜面方 16 200822087 向之夾角的關係曲線圖，說明外加磁場方向與一複合式記 錄膜之膜面方向的夾角大小對該具體例之翻轉場的影響。 17 200822087 【主要元件符號說明】 3 ..........基材 4 ..........複合式磁記錄膜 41 .........第一記錄層 42 .........交互耦合層 43 .........第二記錄層 5 ..........定向成長輔助膜 51 ••… ••…晶種層 52…… …··缓衝層 53…… ••…中間層 6…… .....軟磁膜 y...... .....織構方向 18The He値 size is larger than that of the composite magnetic recording film 4 as a whole.値 and Hrsw 値. <Analytical data> In addition, it is worth mentioning that the function of the soft magnetic film 6 in a perpendicular recording medium is merely to provide a magnetic flux to form a closed loop and to enhance the magnetic field efficiency of the input, which is related to the present invention. The analysis of the magnetic properties and the like is not affected by the magnetic film 6. Therefore, the analysis data of the present invention shown in Figs. 5 to 7 and the like are analyzed under the condition that the soft magnetic film 6 is not interposed. ^ 'Fig. 5 shows the magnetic hysteretic loop curve of magnetization 3: (magnetic polarization, Μ value) external 14 200822087 magnetic field (magnetic field, Η value) shows that the He値 of this comparative example is up to 4500 Oe around. Referring to Fig. 6, in the specific example of the present invention, the interactive elastic coupling force is transmitted by the interactive coupling layer 42 to form an interactive elastic coupling, and the arrangement directions of the magnetic moments in the recording layers 41, 43 are forward parallel. Although the He値 of the composite magnetic recording film 4 as a whole is lowered to 3800 Oe, this specific example of the present invention uses the first recording layer 41 as a main recording layer, and therefore, the He値 of the comparative example (about 4500 Oe) It can be seen that the first recording layer 41 used for the main recording of the present invention not only maintains a high He 値 to meet the thermal stability requirements of the perpendicular recording medium, but also passes through the second recording layer 43. As a function of auxiliary recording, the overall He 该 of the composite magnetic recording film 4 is further reduced and the remanent switching field (Hrsw 简称) of this specific example is reduced. In the present invention, an external magnetic field is applied to the specific example and the comparative example, respectively, so that the specific example and the comparative example respectively reach saturation magnetization, and further, the applied magnetic field is gradually lowered and the applied magnetic field is reversed. Adding to a specific applied magnetic field value and then removing it, the magnetization amount is automatically restored to zero. Therefore, the specific applied magnetic field value is defined as the Hrsw value 0. Referring to FIG. 7, the demagnetization flip field (Hrsw) is added. The relationship between the magnetic field direction and the film surface direction shows that the Hrsw値 of the comparative example is still as high as about 4700 Oe, and the Hrsw値 of the specific example has dropped to about 3900 Oe. The β value of the comparative example 15 200822087 (^ΪΓ1 <Χ)%) is as high as 23.9%. In contrast, in this specific example, p値 is significantly reduced to 12.8%, showing that the specific example is sensitive to the distribution angle of the crystal in the spatial direction. The degree is low. As described above, the perpendicular recording medium of the present invention can achieve the object of the present invention by reducing the inversion field and solving the dilemma in which the magnetic head is difficult to write while achieving the recording characteristics of high recording density. However, the above is only a preferred embodiment of the present invention, and is not limited to the scope of the present invention, that is, the simple equivalent change of the patent application scope and the description of the invention according to the present invention. And modifications are still within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a front view schematically showing a magnetic recording medium disclosed in the publication of US 2005/0042480; FIG. 2 is a partial cross-sectional view showing a magnetic recording medium disclosed in the publication WO04/090874 Figure 3 is a partial cross-sectional view showing another magnetic recording medium disclosed in the publication of WO2004/090874; Figure 4 is a front elevational view showing a preferred embodiment of the perpendicular recording medium of the present invention; Figure 5 is a magnetization A quantity (M) external magnetic field (H) graph illustrating a hysteresis loop graph of a comparative example; FIG. 6 is a magnetization amount (M) external magnetic field (H) graph illustrating a vertical recording medium of the present invention The hysteresis loop curve of the specific example; and FIG. 7 is a graph of the relationship between the direction of the applied magnetic field and the angle of the film surface 16 200822087, indicating the direction of the applied magnetic field and a composite recording film. The influence of the angle of the film surface direction on the inversion field of the specific example. 17 200822087 [Description of main component symbols] 3 ..........Substrate 4 ..... Composite magnetic recording film 41 .........first record Layer 42 ....Inter-coupling layer 43 ..... second recording layer 5 .......... directional growth auxiliary film 51 ••... ••... Seed layer 52............··buffer layer 53...••...intermediate layer 6............ soft magnetic film y... ..... texture direction 18