1331329 第095142076號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：99年08月 九、發明說明： 【發明所屬之技術領域】 . 本發明是有關於一種記錄媒體，特別是指一種垂直記 錄媒體（perpendicular magnetic recording media) ° ' 【先前技術】 以大眾對於資料儲存的需求量與日俱增的現階段而言 ，增加儲存媒體的記錄密度一直是記錄媒體相關領域研發 人員努力的目標之一。1331329 Patent application No. 095142076, the specification of the patent application No. 095142076, the replacement page after the correction, the date of the modification, the date of the modification, the date of the invention, the invention, the invention, the invention, the technical field of the invention, the invention relates to a recording medium, in particular A kind of perpendicular magnetic recording media ° 'Previous technology】 Increasing the recording density of storage media has become one of the goals of R&D personnel in the field of recording media, at the current stage of increasing demand for data storage. .
為了增加記錄媒體的記錄密度並使得其可以符合高密 度記錄媒體的要求，不僅需縮小晶粒大小（grain size)以增加 記錄密度，並需具備有良好的隔離度（isolation)以降低晶粒 間因交互搞合作用（intergranular coupling)所產生的雜訊 (noise)干擾，此外，亦需要具備有足夠的磁異向性能（Ku)以 提供良好的熱穩定性（KuV/kT)。然而，磁性物質的體積太 小時將致使磁異向性能與體積的乘積（KaiV)不足以克服外界 溫度所造成的熱擾動，因此，亦造成磁矩不穩定的超順磁 現象（superparamagnetism) ° 垂直式記錄媒體於記錄位元體積縮小的同時，由於其 磁矩方向是垂直於磁記錄層的層面方向’因而使得垂直式 記錄在更小的記錄位元體積下不致於影響到穩定性。因此 ，以現階段的技術而言，則是利用垂直式記錄以增加磁異 向性能（Ku)並達到熱穩定性的功效，進而突破超順磁現象的 技術瓶頸。雖然使用垂直記錄媒體可解決超順磁現象的問 題，然而，需具備有高矯頑磁場（He)的特性以維持讀寫品質 5 第觀4^號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：99年〇8月 的咼密度記錄媒體，亦面臨到磁頭因翻轉場（switching ，簡稱Hs)過高而不易寫入的問題。 參閱圖1，US 2005/0042480公開案揭示一種磁性記錄 媒體1及其製作方法。該磁性記錄媒體丨沿一疊置方向χ 包含·一非磁性基材10、一由Cr所製成之附著層u、一由 麟化鎳（NiP)所製成的晶種層（see(j iayer) η、一由cr所製成 的第一底層13、一由鈷基合金所製成之第二底層14、一由 鈷鉻鉅（CoCrTa)合金所構成之非磁性中間層15、一由鈷基 合金所構成之鐵磁性（ferromagnetic^ 16、一由含有氮（N) 的釕（Ru)所構成且厚度為〇 8 nm之非磁性耦合（c〇upling)層 17、一由鈷基合金所構成之磁性記錄層丨8、一保護膜1 $及 一潤滑層20。 該磁性記錄媒體丨之非磁性耦合層17的製作方法主要 是固定該非磁性耦合層17的厚度，並於形成該非磁性耦合 層17的過程中控制氮氣（No的分壓藉以改變該非磁性耦合 層17内的N含量。該鐵磁性層丨6與磁性記錄層丨8兩者間 之父互耦合作用力，則是因該非磁性耦合層17内部不同的 氮含量而有所調整；其中’該磁性記錄媒體1的訊雜比 (signal-to-noise ratio，以下簡稱SNR)及值分別是隨著 A分壓的增加而增加及下降。 在A分壓為〇.037 Pa時，交互耦合場（exchange coupling field)達最大值，He值下降至3000奥斯特（〇e)，且 SNR值於307 kFCI的記錄密度下約為14.7 dB。 雖然該磁性記錄媒體1藉由調整該非磁性耦合層17内 第095142076號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：99年08月 的氮含量可增加其SNR值，然而，於形成該非層性耦合層 17的過程中增加N2的分壓亦使得其He值的特性下降，因 此，亦影響該磁性記錄媒體1之磁矩的熱穩定性；此外， 該磁性記錄媒體1亦因該鐵磁性層16及磁性記錄層18之 磁矩方向皆平行於各層的平面，且存在一反鐵磁性 (antiferromagnetic)交互搞合作用力，因此，使得該磁性記 錄媒體1之磁矩的翻轉現象較為複雜；再者，此種水平記 錄式的磁性記錄媒體1與垂直記錄式的記錄媒體相比較之 下，亦容易形成雜訊並提高讀取的困難度；另，此種水平 記錄式的磁性記錄媒體1之記錄密度仍無法符合垂直記錄 媒體對於高記錄密度的要求。 參閱圖2，W02004/090874公開案揭示一種磁記錄媒體 2，包含：一基材21、一形成於該基材21的軟磁層22、一 形成於該軟磁層22上的定向控制層（orientation-controlling layer)23、一形成於該定向控制層23上的垂直磁性膜24、 一形成於該垂直磁性膜24上的保護層25，及一形成於該保 護層25上的潤滑層26。該垂直磁性層24具有一含有鉑（Pt) 及氧化物的始基（Co-based)材料之磁性層241，及一含有鉻 (Cr)且無氧化物的钻基材料之磁性層242。 該磁記錄媒體2主要是藉由該磁性層241輔助上方的 磁性層242之晶粒大小均勻化並增加該磁性層242之結晶 度。 另，參閱圖3，W02004/090874公開案亦揭示另一種磁 記錄媒體2’，大致上是雷同於該磁記錄媒體2，其不同處僅 第095142076號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：99年08月 在於該垂直記錄膜24具有二未含有氧化物之鈷基材料的磁 性層243、二分別疊置於該等磁性層243上並含有氧化物的 鈷基材料之磁性層244，及二分別夾置於該等磁性層243之 間及該等磁性層244之間的非磁性層245。該等非磁性層 245是呈六方密堆積（hep)結構並可輔助該等磁性層243、 244沿c軸定向成長的釕（Ru)、銖（Re)、鈦（Ti)、釔（Y)、铪 (Hf)，及辞（Zn)等。 前述此等磁記錄媒體2、2’雖然具備有SNR值高、熱 穩定性佳及記錄密度大等特點，然而，最令垂直記錄媒體 相關領域者所困擾的，仍是因垂直記錄媒體的Hs值過高而 存在有磁頭不易寫入的問題。 因此，在達到高記錄密度之記錄特性的情況下，亦需 同時解決翻轉場過大的問題，是垂直記錄媒體相關領域者 所待克服的課題之一。 【發明内容】 因此，本發明之目的，即在提供一垂直記錄媒體。 於是，本發明垂直記錄媒體，包含：一基材、一形成 於該基材的複合式磁記錄膜、一夾置於該基材與複合式磁 記錄膜之間的定向成長輔助膜；及一夾置於該基材與該定 向成長輔助膜之間的軟磁膜。 該複合式磁記錄膜具有一第一記錄層、一夾置於該第 一記錄層與該基材之間且厚度是介於0.2 nm〜1 nm之間的 交互耦合層，及一夾置於該交互耦合層及基材之間的第二 記錄層。該第一記錄層是呈垂直異向性（perpendicular 1331329 第095142076號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：99年08月 anisotropy)之硬磁性（hard magnetic)及軟磁性（soft magnetic) 其中一者；該第二記錄層是呈垂直異向性之硬磁性及軟磁 : 性其中另一者。該第一、上記錄層藉由該交互耦合層傳遞 交互彈性耦合力形成交互彈性耦合。 本發明之功效在於，使得垂直記錄媒體在達到高記錄 密度的記錄特性之情況下，亦可同時降低翻轉場並解決磁 頭不易寫入的窘境。 【實施方式】 鲁〈發明詳細說明〉 參閱圖4，本發明之垂直記錄媒體的一較佳實施例，包 / 含：一基材3、一形成於該基材3的複合式磁記錄膜4、一 - 夾置於該基材3與複合式磁記錄膜4之間的定向成長輔助 膜5;及一夾置於該基材3與該定向成長辅助膜5之間的軟 磁膜6。 該複合式磁記錄膜4具有一第一記錄層41、一夾置於 • 該第一記錄層41與該基材3之間的交互耦合層42,及一夾 置於該交互輕合層42及基材3之間的第二記錄層43。該第 一記錄層41是呈垂直異向性之硬磁性及軟磁性其中一者； 該第二記錄層43是呈垂直異向性之硬磁性及軟磁性其中另 一者。 ' 值得—提的是，當㈣互輕合層42的厚度過大時，該 • 等記錄層41、43將因傳輸距離過遠而影響電子的傳輸效岸In order to increase the recording density of the recording medium and make it conform to the requirements of high-density recording media, it is necessary not only to reduce the grain size to increase the recording density, but also to have a good isolation to reduce the intergranularity. Noise interference caused by intergranular coupling, in addition, sufficient magnetic anisotropy (Ku) is required to provide good thermal stability (KuV/kT). However, if the volume of the magnetic substance is too small, the product of magnetic anisotropy performance and volume (KaiV) will not be sufficient to overcome the thermal disturbance caused by the external temperature, and therefore, the superparamagnetism of the magnetic moment instability (superparamagnetism) The recording medium reduces the volume of the recording bit while the direction of the magnetic moment is perpendicular to the plane direction of the magnetic recording layer, so that the vertical recording does not affect the stability under a smaller recording bit volume. Therefore, in the current stage of technology, vertical recording is used to increase the magnetic anisotropy performance (Ku) and achieve thermal stability, thereby breaking the technical bottleneck of superparamagnetic phenomena. Although the use of a perpendicular recording medium can solve the problem of superparamagnetic phenomenon, it is necessary to have a high coercive magnetic field (He) characteristic to maintain the quality of reading and writing. 5 Patent application No. 4^ is supplemented, and no correction is made after the correction. Manual replacement page correction date: The 咼 density recording medium of 99 years and August is also facing the problem that the magnetic head is too easy to be written due to excessive switching (Hs). Referring to Fig. 1, a publication of the magnetic recording medium 1 and a method of fabricating the same are disclosed in the publication of US 2005/0042480. The magnetic recording medium 包含 includes a non-magnetic substrate 10, an adhesion layer u made of Cr, and a seed layer made of nickel-plated nickel (NiP) in a stacked direction (see(j) Iayer) η, a first underlayer 13 made of cr, a second underlayer 14 made of a cobalt-based alloy, a non-magnetic intermediate layer 15 composed of a cobalt-chromium giant (CoCrTa) alloy, a ferromagnetic structure composed of a cobalt-based alloy (ferromagnetic^16, a non-magnetic coupling layer 17 composed of ruthenium (Ru) containing nitrogen (N) and having a thickness of 〇8 nm, and a cobalt-based alloy The magnetic recording layer 8 is formed, a protective film 1 and a lubricating layer 20. The non-magnetic coupling layer 17 of the magnetic recording medium is mainly formed by fixing the thickness of the non-magnetic coupling layer 17 and forming the non-magnetic layer. Nitrogen is controlled during the coupling layer 17 (the partial pressure of No changes the N content in the non-magnetic coupling layer 17. The parental coupling force between the ferromagnetic layer 丨6 and the magnetic recording layer 丨8 is due to The non-magnetic coupling layer 17 has different nitrogen contents and is adjusted; wherein the magnetic recording medium The signal-to-noise ratio (SNR) and the value of the body 1 increase and decrease with the increase of the A partial pressure. When the A partial pressure is 037.037 Pa, the interaction coupling field (exchange) The coupling field reaches a maximum value, the He value drops to 3000 Oersted (〇e), and the SNR value is about 14.7 dB at a recording density of 307 kFCI. Although the magnetic recording medium 1 is adjusted by the non-magnetic coupling layer 17 Supplement No. 095, 142, 076, the specification of the unmodified line after the correction, the replacement page, the correction date: the nitrogen content of August, 1999 may increase its SNR value, however, the N2 is added in the process of forming the non-layered coupling layer 17 The pressure also lowers the characteristics of the He value, and therefore also affects the thermal stability of the magnetic moment of the magnetic recording medium 1; in addition, the magnetic recording medium 1 also has a magnetic moment direction of the ferromagnetic layer 16 and the magnetic recording layer 18. All of them are parallel to the plane of each layer, and there is an antiferromagnetic interaction force, so that the magnetic moment of the magnetic recording medium 1 is complicated to be reversed; further, the horizontal recording type magnetic recording medium 1 with In comparison with the direct recording type recording medium, it is easy to form noise and improve the difficulty of reading; in addition, the recording density of the horizontal recording type magnetic recording medium 1 cannot match the vertical recording medium for high recording density. Referring to FIG. 2, the publication of WO2004/090874 discloses a magnetic recording medium 2 comprising: a substrate 21, a soft magnetic layer 22 formed on the substrate 21, and an orientation control layer formed on the soft magnetic layer 22 ( An orientation-controlling layer 23, a vertical magnetic film 24 formed on the alignment control layer 23, a protective layer 25 formed on the vertical magnetic film 24, and a lubricating layer 26 formed on the protective layer 25. The perpendicular magnetic layer 24 has a magnetic layer 241 of a Co-based material containing platinum (Pt) and an oxide, and a magnetic layer 242 of a drill-based material containing chromium (Cr) and no oxide. The magnetic recording medium 2 is mainly made to uniformize the crystal grain size of the upper magnetic layer 242 by the magnetic layer 241 and increase the crystallinity of the magnetic layer 242. In addition, referring to FIG. 3, the WO04/090874 publication also discloses another magnetic recording medium 2', which is substantially the same as the magnetic recording medium 2. The difference is only the patent application No. 095142076, and the line is not corrected after correction. Specification Replacement Page Revision Date: August 2008, the perpendicular recording film 24 has two magnetic layers 243 of cobalt-free material containing no oxide, and two cobalt-based materials respectively superposed on the magnetic layers 243 and containing oxides. The magnetic layer 244 and the non-magnetic layer 245 sandwiched between the magnetic layers 243 and the magnetic layers 244, respectively. The non-magnetic layers 245 are in a hexagonal close-packed (hep) structure and can assist the magnetic layers 243, 244 to grow along the c-axis, such as ruthenium (Ru), ruthenium (Re), titanium (Ti), and yttrium (Y). , 铪 (Hf), and 辞 (Zn). The magnetic recording media 2, 2' have the characteristics of high SNR value, good thermal stability, and high recording density. However, the most common problem in the field of perpendicular recording media is the Hs of the perpendicular recording medium. The value is too high and there is a problem that the magnetic head is not easily written. Therefore, in the case of achieving recording characteristics of high recording density, it is also necessary to simultaneously solve the problem of excessive flip field, which is one of the problems to be overcome by those in the field of perpendicular recording media. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a perpendicular recording medium. Therefore, the perpendicular recording medium of the present invention comprises: a substrate, a composite magnetic recording film formed on the substrate, and a directional growth auxiliary film sandwiched between the substrate and the composite magnetic recording film; and A soft magnetic film sandwiched between the substrate and the oriented growth auxiliary film. The composite magnetic recording film has a first recording layer, an alternating coupling layer sandwiched between the first recording layer and the substrate and having a thickness between 0.2 nm and 1 nm, and a sandwich The second recording layer between the alternating coupling layer and the substrate. The first recording layer is hard magnetic and soft magnetic in the form of a vertical anisotropy (reported by the patent application No. 193, 142, 062, pp. s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s (soft magnetic) one of the two; the second recording layer is a hard magnetic and soft magnetic having a vertical anisotropy: the other of the properties. The first and upper recording layers form an interactive elastic coupling by transmitting the interactive elastic coupling force through the alternating coupling layer. The effect of the present invention is that, in the case where the recording medium of a high recording density is achieved by the perpendicular recording medium, the flipping field can be simultaneously reduced and the dilemma in which the head is difficult to write can be solved. [Embodiment] Lu <Detailed Description of the Invention> Referring to Figure 4, a preferred embodiment of the perpendicular recording medium of the present invention comprises: a substrate 3, a composite magnetic recording film 4 formed on the substrate 3 And an oriented growth assisting film 5 interposed between the substrate 3 and the composite magnetic recording film 4; and a soft magnetic film 6 interposed between the substrate 3 and the oriented growth auxiliary film 5. The composite magnetic recording film 4 has a first recording layer 41, an inter-coupling layer 42 interposed between the first recording layer 41 and the substrate 3, and a sandwiching layer 40. And a second recording layer 43 between the substrates 3. The first recording layer 41 is one of hard magnetic and soft magnetic which is vertically anisotropic; the second recording layer 43 is one of hard magnetic and soft magnetic which are perpendicular anisotropy. It is worth mentioning that when the thickness of the (4) mutual light bonding layer 42 is too large, the recording layers 41 and 43 will affect the transmission efficiency of electrons due to the long transmission distance.
並使得該等記錄層41、43彼此間無交互K ，當該交互_ 42的厚度不足時，亦難以預測該等記錄 9 第095142076號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：99年08月 層41、43間的耦合作用力；因此，適合於本發明該交互耦 合層42的厚度是介於0.2 nm〜5 nm之間；且，適用於本發 明之交互耦合層42是選自下列所構成之群組：釕（Ru)、銶 (Re)、铑（Rh)、鉻（Cr)、銅（Cu)、鉑（Pt)、鈀（Pd)、金（Au)、 銀（Ag)、銀（Ir)，及此等之一組合。 更值得一提的是，該第一、二記錄層41、43雖然在該 交互耦合層42的厚度是介於1.0 nm〜5.0 nm之間的條件下 ，而存在有局部的鐵磁性交互耦合作用力及反鐵磁性交互 耦合作用力，但與前述US 2005/0042480公開案所提之磁性 記錄媒體1相較之下，本發明該較佳實施例因該第一、二 記錄層41、43是呈垂直異向性且具鐵磁性交互耦合而使得 其翻轉現象較不複雜，此外，更可藉由垂直記錄式的機制 以增加記錄密度。 又更值得一提的是，當該交互耦合層42的厚度是介於 0.2 nm〜1 nm之間時，該第一、二記錄層41、43則可因藉 由該交互輕合層42傳遞交互彈性（exchange-spring)輕合力（ 即，改變該等記錄層41、43之交互耦合常數）而形成交互彈 性耦合，並使得該等記錄層41、43内之各磁矩的排列方向 呈現正向平行；較佳地，該交互耦合層42的厚度是介於 0.2 nm ~ 0.7 nm 之間。 在本發明之該較佳實施例中，適合於本發明之第一、 二記錄層41、43的厚度是介於1 nm〜40 nm之間；另，由 於钻（Co)元素的易軸是平行於晶格（lattice)的c軸且垂直於 膜面方向，因此，適合於本發明之第一、二記錄層41、43 1331329 第095142076號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：99年08月 分別是一鈷基材料。 較佳地，該第一記錄層41的矯頑磁場是大於該第二記 • 錄層43的橋頑磁場；該第一記錄層41的厚度是大於該第 二記錄層43的厚度；更佳地，該第一記錄層41是呈垂直 異向性之硬磁性（即，He値至少大於3000高斯），該第二記 錄層43是呈垂直異向性之軟磁性（即，He値至少小於3000 高斯）。And the recording layers 41, 43 have no interaction K with each other. When the thickness of the interaction _42 is insufficient, it is also difficult to predict the records. The patent application No. 095142076 is supplemented, and the revised non-lined specification replacement page is corrected. Date: Coupling force between layers 41 and 43 in August, 1999; therefore, the thickness of the cross-coupling layer 42 suitable for the present invention is between 0.2 nm and 5 nm; and, suitable for the cross-coupling layer of the present invention 42 is a group selected from the group consisting of ruthenium (Ru), ruthenium (Re), rhodium (Rh), chromium (Cr), copper (Cu), platinum (Pt), palladium (Pd), gold (Au). , silver (Ag), silver (Ir), and a combination of these. It is worth mentioning that the first and second recording layers 41, 43 have a local ferromagnetic interaction coupling although the thickness of the alternating coupling layer 42 is between 1.0 nm and 5.0 nm. The force and antiferromagnetic interaction coupling force, but compared with the magnetic recording medium 1 mentioned in the aforementioned US 2005/0042480 publication, the preferred embodiment of the present invention is because the first and second recording layers 41, 43 are It is vertically anisotropic and has ferromagnetic interaction coupling, which makes the flipping phenomenon less complicated. In addition, the recording density can be increased by a perpendicular recording mechanism. It is further worth mentioning that when the thickness of the alternating coupling layer 42 is between 0.2 nm and 1 nm, the first and second recording layers 41 and 43 can be transmitted by the interactive light bonding layer 42. The exchange-spring light combining force (ie, changing the mutual coupling constant of the recording layers 41, 43) forms an elastic coupling, and causes the arrangement directions of the magnetic moments in the recording layers 41, 43 to be positive. Parallel; preferably, the thickness of the alternating coupling layer 42 is between 0.2 nm and 0.7 nm. In the preferred embodiment of the present invention, the thickness of the first and second recording layers 41, 43 suitable for the present invention is between 1 nm and 40 nm; and, because the easy axis of the (Co) element is Parallel to the c-axis of the lattice and perpendicular to the direction of the film surface, therefore, it is suitable for the first and second recording layers 41, 43 1331329 of the present invention, the patent application No. 095142076, the replacement of the specification without replacement Page revision date: August 1999 is a cobalt-based material. Preferably, the coercive magnetic field of the first recording layer 41 is greater than the bridge coercive magnetic field of the second recording layer 43; the thickness of the first recording layer 41 is greater than the thickness of the second recording layer 43; The first recording layer 41 is hard magnetically perpendicular to the anisotropy (ie, He値 is at least greater than 3000 Gauss), and the second recording layer 43 is soft magnetically perpendicular to the anisotropy (ie, He値 is at least less than 3000 Gauss).
適用於本發明之鈷基材料是由一呈六方晶結構的顆粒 狀（granular)磁記錄材料所構成，一般可使用摻有氧化物的 鈷基材料，例如：摻有氧化矽的鈷基鉑鉻合金（CoPtCr-Si02) ;又更佳地，在使用一組成比例（原子百分比）為 {(C〇9〇Cri〇)i〇〇-xPtx}i〇〇-Y-(Si〇2)Y 的纪材，且以 15 mTorr〜50 mTorr的工作壓力（working pressure)及約100 W的纪材輸出 功率之條件下實施直流磁控滅鍍（DC magnetron sputtering) 以製作該等記錄層41、43時，該第一記錄層41的厚度是 介於15 nm ~ 40 nm之間，該第二記錄層43的厚度是介於1 nm〜15 nm之間，其中，該把材之原子百分比中的 X=15〜30 ， Y=5〜15 。 值得一提的是，適用於本發明之鈷基材料亦可以是選 自下列所構成之群組的多層膜結構：（Co/Pd)n、（Co/Pt)n、 (FeCo/Pd)n，或（FeCo/Pt)n，其中，η是介於1〜20的整數； 另，適用於本發明之钻基材料亦可以是呈非晶（amorphous) 態的CoX合金或FeCoX合金，其中，X是選自下列所構成 之群組：铽（Tb)、釓（Gd)、鏑（Dy)、鋁（Ta)、铪（Hf)，及此 11 1331329 第095142076號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：99年08月 等之一組合。 較佳地，該定向成長輔助膜5具有一提供該第一、二 . 記錄層41、43沿著一垂直於該基材3的織構方向y呈定向 織構（orientation texture)且晶體結構為六方晶系的晶種層51 、一夾置於該軟磁膜6與晶種層51之間並提供該晶種層51 沿該織構方向y成長且呈面心立方（fee)晶系的緩衝層52, 及一夾置於該軟磁膜6與該緩衝層52之間並呈非晶態的中 間層53。 ® 適用於本發明之中間層53是選自於下列所構成之群組 :铽、亂、鏑、组、給，及此等之一組合；該晶種層51是 - 選自下列所構成之群組：釕（Ru)、鈦（Ti) '銖（Re)、锇（Os) 、鉻（Cr)、辞（Zn)、#(Zr)、鉻（Tc)、鎂（Mg)、铑（Rh)、鎢 (W)及此等之一組合；該緩衝層52是選自於下列所構成之 群組：钻（Pt)、妃（Pd)、銅（Cu)、金（Au)、銀（Ag)及此等之 一組合；該軟磁膜6是由選自於下列所構成之群組的合金The cobalt-based material suitable for use in the present invention is composed of a granular magnetic recording material having a hexagonal crystal structure, and generally a cobalt-based material doped with an oxide, for example, cobalt-based platinum chromium doped with cerium oxide. Alloy (CoPtCr-Si02); and more preferably, a composition ratio (atomic percent) is {(C〇9〇Cri〇)i〇〇-xPtx}i〇〇-Y-(Si〇2)Y When the DC magnetron sputtering is performed under the conditions of a working pressure of 15 mTorr to 50 mTorr and a production output of about 100 W to prepare the recording layers 41 and 43 The thickness of the first recording layer 41 is between 15 nm and 40 nm, and the thickness of the second recording layer 43 is between 1 nm and 15 nm, wherein X of the atomic percentage of the material =15~30, Y=5~15. It is worth mentioning that the cobalt-based material suitable for use in the present invention may also be a multilayer film structure selected from the group consisting of (Co/Pd)n, (Co/Pt)n, (FeCo/Pd)n. Or (FeCo/Pt)n, wherein η is an integer of from 1 to 20; in addition, the drill-based material suitable for use in the present invention may also be an amorphous or a CoCo alloy or an FeCoX alloy, wherein X is a group selected from the group consisting of 铽 (Tb), 釓 (Gd), 镝 (Dy), aluminum (Ta), 铪 (Hf), and the supplement of the patent application No. 095142076, Replacement of the instructions without a line Replacement date: one of the combinations of 99 years and August. Preferably, the directional growth assisting film 5 has an orientation texture and a crystal structure in which the first and second recording layers 41, 43 are oriented along a texture direction y perpendicular to the substrate 3. A seed layer 51 of a hexagonal system is interposed between the soft magnetic film 6 and the seed layer 51 and provides a buffer in which the seed layer 51 grows in the texture direction y and is in a face-centered crystal system. The layer 52, and an intermediate layer 53 interposed between the soft magnetic film 6 and the buffer layer 52 and in an amorphous state. The intermediate layer 53 suitable for use in the present invention is selected from the group consisting of ruthenium, chaos, ruthenium, group, feed, and combinations thereof; the seed layer 51 is - selected from the following Group: ruthenium (Ru), titanium (Ti) '铢 (Re), 锇 (Os), chromium (Cr), ( (Zn), # (Zr), chromium (Tc), magnesium (Mg), 铑 ( Rh), tungsten (W), and a combination thereof; the buffer layer 52 is selected from the group consisting of: drill (Pt), praseodymium (Pd), copper (Cu), gold (Au), silver (Ag) and a combination thereof; the soft magnetic film 6 is an alloy selected from the group consisting of the following
所製成：钻錯组（CoZrTa)、钻錯銳（CoZrNb)、銘鐵（CoFe)、 链鐵氮（CoFeN)、銘鐵棚（CoFeB)、鐵組碳（FeTaC)、鐵銘石夕 (FeAlSi)、鎳鐵（NiFe)及鎳磷（NiP)。 較佳地，該中間層53是铽，且該中間層53的厚度是 介於2 nm〜12 nm之間；該晶種層51的厚度是介於5 nm〜 40 nm之間。 <具體例> 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之一具體例的詳細說明中，將可清楚的 12 第095142076號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：99年08月 呈現。 在本發明被詳細描述之前，要注意的是，在以下的說 明内容中，類似的元件是以相同的編號來表示。 再參閱圖4，在本發明垂直記錄媒體之一具體例中，該 基材3是由矽所製成、該第一記錄層41是厚度約為30 nm 之摻有氧化矽的鈷基鉑鉻合金（CoPtCr-Si02)、該交互耦合層 42是厚度約為0.5 nm的Ru、該第二記錄層43是厚度約為 5 nm的CoPtCr-Si02、該晶種層51是厚度為20 nm且呈 hep結構的Ru、該緩衝層52是厚度約為7 nm且呈fee結構 的Pt、該中間層53是厚度約為3 nm且呈非晶質的Tb，該 軟磁膜6是由厚度約為200 nm ~ 400 nm的CoZrTa合金所 製成；本發明自該基材3沿該織構方向y的膜層結構依序 為：Si/CoZrTa/Tb/Pt/Ru/CoPtCr-Si02/Ru/CoPtCr-Si02。 本發明該具體例之垂直記錄媒體的製作方法，是簡單 地說明於下。 將一經過標準清洗流程的矽晶圓設置於一直流磁控濺 鑛系統中，以在該石夕晶圓上形成由CoZrTa合金所構成的該 軟磁膜6。 進一步地，維持該直流磁控濺鍍系統的工作壓力為3 mTorr，並對一由Tb戶斤構成的乾材（target)施予30 W的輸出 功率，以在該軟磁膜6上形成該中間層53。接著，分別維 持7 mTorr及20 mTorr的工作壓力，並分別對一 Pt乾材及 一 Ru靶材施予100 W及125 W的輸出功率，以於該軟磁膜 6上依序形成該緩衝層52及該晶種層51。 第095142076號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：99年08月 另，維持該直流磁控濺鍍系統的工作壓力為30 mTorr ，並對一 CoPtCr-Si02複合靶材施予100 W的輸出功率，進 而在該晶種層51上形成該第二記錄層43，其中，該 CoPtCr-Si02複合靶材是由台灣贺利氏材料科技股份有限公 司（Heraeus Materials Technology)所製作，其組成比例（原子 百分比）為{(C〇9〇Cri〇)i〇〇-xPtx}i〇〇.Y-(Si〇2)Y，X=15〜30， Y=5 〜15。 進一步地，維持該直流磁控濺鍍系統的工作壓力為20 mTorr並對該Ru把材施予125 W的輸出功率以在該第二記 錄層43上形成該交互耦合層42 ;最後，利用相同於該第二 記錄層43的製程參數於該交互耦合層42上形成該第一記 錄層41。 <比較例> 在本發明垂直記錄媒體的一比較例中，大致上是雷同 於該具體例，其不同處是在於省略掉該交互耦合層42及該 第二記錄層43，且其目的是在於測量該第一記錄層41的 He値大小，並比對該複合式磁性記錄膜4整體的He値及 Hrsw 値0 <分析數據> 另，值得一提的是，該軟磁膜6於垂直記錄媒體中的 主要功用，僅是在於提供磁通量形成封閉型的迴路並提昇 寫入的磁場效率，而與本發明相關之磁性等分析將不受該 軟磁膜6的影響，因此，本發明以下圖5〜圖7等分析數據 是在未夾置有該軟磁膜6的條件下分析。 1331329 第095142076號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：99年08月 參閱圖5，由磁化量（magnetic polarization，Μ值）對外 加磁場（magnetic field，Η值）所作的磁滯迴路（magnetic _ hysteretic loop)曲線圖顯示可知，該比較例之He値高達 4500 Oe 左右。 參閱圖6，本發明該具體例是藉由該交互耦合層42傳 遞交互彈性耦合力而形成交互彈性耦合，並使得該等記錄 層41、43内之各磁矩的排列方向呈現正向平行。該複合式 磁記錄膜4整體上的He値雖然下降至3800 Oe，但本發明 ^ 該具體例是利用該第一記錄層41作為主要記錄層，因此， 由該比較例之He値（約4500 Oe)可知，本發明用來作為主 - 要記錄用的第一記錄層41不僅維持有較高的He値以符合 垂直記錄媒體對熱穩定性的要求之特性；同時，亦透過該 第二記錄層43以作為輔助記錄的功用，進而降低該複合式 磁記錄膜4之整體He値並減少該具體例之去磁態翻轉場 (remanent switching field，簡稱 Hrsw 値）。 φ 在本發明中，是分別先對該具體例及比較例施予外加 磁場以使得該具體例及比較例分別達飽和磁化量（saturation magnetization)，進一步地，逐漸降低外加磁場並使外加磁 場反向增加至一特定外加磁場值再予以去除，此時磁化量 則自動地恢復至零，因此，該特定外加磁場值被定義為 Hrsw 值。 參閱圖7，由去磁態翻轉場（Hrsw)對外加磁場方向與膜 面方向之夾角的曲線關係圖顯示可知，該比較例的Hrsw値 仍高達約4700 Oe，反觀該具體例的Hrsw値已下降至3900 15 1331329 第095142076號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：99年08月Made: CoZrTa, CoZrNb, CoFe, CoFeN, CoFeB, FeTaC, Fe Mingshi FeAlSi), nickel iron (NiFe) and nickel phosphorus (NiP). Preferably, the intermediate layer 53 is tantalum, and the thickness of the intermediate layer 53 is between 2 nm and 12 nm; the thickness of the seed layer 51 is between 5 nm and 40 nm. <Specific Example> With regard to the foregoing and other technical contents, features and effects of the present invention, in the following detailed description with reference to a specific example of the reference drawings, the patent application No. 095142076, which is clearly identifiable, is supplemented and corrected. Replacement page without a line Replacement date: 99 years in August. Before the present invention is described in detail, it is noted that in the following description, similar elements are denoted by the same reference numerals. Referring to FIG. 4, in a specific example of the perpendicular recording medium of the present invention, the substrate 3 is made of tantalum, and the first recording layer 41 is a cobalt-doped cobalt-platinum-plated chromium having a thickness of about 30 nm. The alloy (CoPtCr-SiO2), the alternating coupling layer 42 is Ru having a thickness of about 0.5 nm, the second recording layer 43 is CoPtCr-SiO 2 having a thickness of about 5 nm, and the seed layer 51 is 20 nm thick. Ru of the hep structure, the buffer layer 52 is Pt having a thickness of about 7 nm and having a feel structure, the intermediate layer 53 is an amorphous Tb having a thickness of about 3 nm, and the soft magnetic film 6 is made of a thickness of about 200. The structure of the CoZrTa alloy is from nm to 400 nm; the film structure of the substrate from the substrate 3 along the texture direction y is: Si/CoZrTa/Tb/Pt/Ru/CoPtCr-SiO 2 /Ru/CoPtCr- Si02. The method of fabricating the perpendicular recording medium of this specific example of the present invention will be briefly described below. A germanium wafer subjected to a standard cleaning process is placed in a DC magnetron sputtering system to form the soft magnetic film 6 composed of a CoZrTa alloy on the day wafer. Further, the operating pressure of the DC magnetron sputtering system is maintained at 3 mTorr, and an output power of 30 W is applied to a dry material composed of Tb households to form the intermediate portion on the soft magnetic film 6. Layer 53. Then, the working pressures of 7 mTorr and 20 mTorr are respectively maintained, and an output power of 100 W and 125 W is applied to a Pt dry material and a Ru target, respectively, to sequentially form the buffer layer 52 on the soft magnetic film 6. And the seed layer 51. Supplement No. 095142076, revised or unlined instructions Replacement page Revision date: In August, 1999, the working pressure of the DC magnetron sputtering system was maintained at 30 mTorr, and a CoPtCr-Si02 composite target was maintained. The second recording layer 43 is formed on the seed layer 51 by applying an output power of 100 W, wherein the CoPtCr-SiO 2 composite target is manufactured by Heraeus Materials Technology, Taiwan. For the production, the composition ratio (atomic percentage) is {(C〇9〇Cri〇)i〇〇-xPtx}i〇〇.Y-(Si〇2)Y, X=15~30, Y=5~15. Further, maintaining the operating pressure of the DC magnetron sputtering system at 20 mTorr and applying 125 W of output power to the Ru material to form the inter-coupling layer 42 on the second recording layer 43; The first recording layer 41 is formed on the alternating coupling layer 42 by process parameters of the second recording layer 43. <Comparative Example> In a comparative example of the perpendicular recording medium of the present invention, substantially the same as the specific example, the difference is that the cross-coupling layer 42 and the second recording layer 43 are omitted, and the purpose thereof It is to measure the He値 size of the first recording layer 41 and to compare He値 and Hrsw 値0 <analytical data> to the entire composite magnetic recording film 4. Further, it is worth mentioning that the soft magnetic film 6 The main function in the perpendicular recording medium is only to provide magnetic flux to form a closed loop and improve the magnetic field efficiency of writing, and the analysis of magnetic properties and the like related to the present invention will not be affected by the soft magnetic film 6, and therefore, the present invention The analysis data of FIG. 5 to FIG. 7 and the like below are analyzed under the condition that the soft magnetic film 6 is not interposed. 1331329 Patent application No. 095142076 Supplementary, revised, unlined instructions Replacement page Revision date: August, 2008, see Figure 5, by magnetic polarization (magnetic polarization, Μ value) external magnetic field (magnetic field, Η value) The magnetic hysteretic loop curve shows that the He 该 of this comparative example is as high as about 4500 Oe. Referring to Fig. 6, in the specific example of the present invention, the interactive elastic coupling force is transmitted by the interactive coupling layer 42 to form an interactive elastic coupling, and the arrangement directions of the magnetic moments in the recording layers 41, 43 are forward parallel. Although the He値 of the composite magnetic recording film 4 as a whole is lowered to 3800 Oe, the present invention uses the first recording layer 41 as a main recording layer, and therefore, the He値 of the comparative example (about 4500) Oe), the first recording layer 41 used for the main recording of the present invention not only maintains a high He 値 to meet the thermal stability requirements of the perpendicular recording medium, but also transmits the second recording. The layer 43 functions as an auxiliary recording, thereby reducing the overall He 该 of the composite magnetic recording film 4 and reducing the remanent switching field (Hrsw 简称) of this specific example. In the present invention, an external magnetic field is applied to the specific example and the comparative example, respectively, so that the specific example and the comparative example respectively reach a saturation magnetization, and further, the applied magnetic field is gradually lowered and the applied magnetic field is reversed. The value is increased to a specific applied magnetic field value, and the magnetization amount is automatically restored to zero. Therefore, the specific applied magnetic field value is defined as the Hrsw value. Referring to FIG. 7, the relationship diagram between the direction of the applied magnetic field and the direction of the film surface by the demagnetization inversion field (Hrsw) shows that the Hrsw値 of the comparative example is still as high as about 4700 Oe, and the Hrsw値 of the specific example has been observed. Declined to 3900 15 1331329 Patent application No. 095142076, revised, no-lined instructions Replacement page Revision date: August, 1999
Oe左右；此外，由圖 7顯示可知，該比較例的β值 (高達23.9 %，反觀該具體例，β値明顯下降至 . 12.8 %，顯示出該具體例對於晶體易軸方向在空間中之分佈 角度的敏感度較低。 0 綜觀上述，本發明垂直記錄媒體在達到高記錄密度的 記錄特性之情況下，亦可同時降低翻轉場並解決磁頭不易 寫入的窘境，確實達到本發明之目的。 惟以上所述者，僅為本發明之較佳實施例而已，當不 ^ 能以此限定本發明實施之範圍，即大凡依本發明申請專利 範圍及發明說明内容所作之簡單的等效變化與修飾，皆仍 - 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一正視示意圖，說明US 2005/0042480公開案所 揭示的一種磁性記錄媒體； 圖2是一局部剖視示意圖，說明W02004/090874公開 φ 案所揭示的一種磁記錄媒體； 圖3是一局部剖視示意圖，說明W02004/090874公開 案所揭示的另一種磁記錄媒體； 圖4是一正視示意圖，說明本發明垂直記錄媒體的一 較佳實施例； 圖5是一磁化量（Μ)對外加磁場（Η)曲線圖，說明一比較 例之磁滯迴路曲線圖； 圖6是一磁化量（Μ)對外加磁場（Η)曲線圖，說明本發明 垂直記錄媒體的一具體例之磁滯迴路曲線；及 16 1331329 第095142076號專利申請案補充、修正後無劃線之說明書替換頁 修正曰期：99年08月 圖7是一去磁態翻轉場（Hrsw)對外加磁場方向與膜面方 向之夾角的關係曲線圖，說明外加磁場方向與一複合式記 . 錄膜之膜面方向的夾角大小對該具體例之翻轉場的影響。In addition, as shown in Fig. 7, the β value of the comparative example (up to 23.9%), in contrast to this specific example, β値 significantly decreased to 12.8%, showing that the specific example is in the space for the crystal easy axis direction. The sensitivity of the distribution angle is low. 0 In view of the above, in the case of achieving high recording density recording characteristics, the perpendicular recording medium of the present invention can simultaneously reduce the inversion field and solve the dilemma in which the magnetic head is difficult to write, and indeed achieve the object of the present invention. The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent change according to the scope of the invention and the description of the invention. And the modifications are still within the scope of the present invention. [Simplified Schematic] FIG. 1 is a front view showing a magnetic recording medium disclosed in the publication of US 2005/0042480; FIG. 2 is a partial cross-sectional view. Schematic diagram showing a magnetic recording medium disclosed in WO 2004/090874; FIG. 3 is a partial cross-sectional view showing another disclosure disclosed in WO2004/090874 Figure 4 is a front elevational view showing a preferred embodiment of the perpendicular recording medium of the present invention; Figure 5 is a graph of magnetization (Μ) applied magnetic field (Η), illustrating a hysteresis of a comparative example Figure 6 is a graph of magnetization (Μ) applied magnetic field (Η), illustrating a hysteresis loop curve of a specific example of the perpendicular recording medium of the present invention; and 16 1331329 Patent Application No. 095142076 After the no-line instruction replacement page correction period: 99 years and August, Figure 7 is a demagnetization state (Hrsw) relationship between the direction of the applied magnetic field and the film surface direction, indicating the direction of the applied magnetic field and a composite The influence of the angle of the film surface direction of the film on the inversion field of the specific example.
17 1331329 第095142076號專利申請案補充、修正後無劃線之說明書替換頁 修正日期：99年08月 【主要元件符號說明】 51… …··晶種層 52··... ••…緩衝層 53.···. …·中間層 6…… .....軟磁膜 y...... 織構方向 3 ..........基材 4 ..........複合式磁記錄膜 41 .........第一記錄層 42 .........交互耦合層 43 .........第二記錄層 5 ..........定向成長輔助膜 1817 1331329 Patent application No. 095142076 Supplementary, revised and unlined instructions Replacement page Revision date: 99 years August [Major component symbol description] 51... ...·· seed layer 52··... ••...buffer Layer 53.···....·intermediate layer 6............ soft magnetic film y... texture direction 3 ..........substrate 4 ..... ..... composite magnetic recording film 41 ... first recording layer 42 ... ... interactive coupling layer 43 ... ... second record Layer 5 .......... directional growth auxiliary film 18