200821093 九、發明說明 【發明所屬之技術領域】 本發明係關於將硏磨半導體晶圓之CMP裝置（化學 機械硏磨機器；chemical mechanical polishing machine) 中所使用之硏磨布的表面狀態予以修整的鑽石修整器。 的被 定圓 特晶 以體 錠導 晶半 矽該 勺 勺 & 白 狀狀 柱板 圓圓 成成 長割 成切 晶 。 結者 將造 係 製 /T 圓而 1 曰 S®口 術體切 技導以 前半加 先度 ί 厚 傳送到STD、ILD、W、Cu製程等的加工步驟。在這些步 驟中，該半導體晶圓係藉由CMP裝置，進行化學且機械 性加工硏磨。 CMP裝置係使用添加有鹼性液或酸性液、或中性螯 合劑的液體等，蝕刻半導體晶圓，以實施化學硏磨。接著 ，使用砂微粒子（游離砥粒）實施機械硏磨。該硏磨精度 對半導體晶圓的品質有很大的影響。 CMP裝置係將被夾在夾盤機構的半導體晶圓推壓於 硏磨布上以實施硏磨。硏磨布係張設於圓板狀的硏磨板上 面。硏磨板係藉由下面側的旋轉機構旋轉。夾盤機構係固 定於在硏磨板的上方昇降之主軸的下端。主軸係與硏磨板 逆向旋轉。被夾在夾盤機構的半導體晶圓係一邊藉由主軸 旋轉，一邊被推壓於硏磨布。在硏磨處理中，將鹼液等中 混合有砂微粒子等的硏磨液（slurry)滴在硏磨布上。 在CMP裝置中長時間使用硏磨布時，硏磨面的平坦 200821093 度會降低，而且會產生堵塞。同時，半導體晶圓的硏磨精 度或硏磨效率會降低。於是，使用修整硏磨布之表面狀態 的修整器。修整器係形成圓板狀，可被推壓於硏磨布上進 行旋轉。支持修整器的機械臂可使修整器在硏磨布上移動 。藉由該動作，修整器可均勻地與硏磨布整面接觸。修整 器係磨削硏磨布的表面以生成新的面，同時使其表面粗度 最適當化。修整器被要求具效率良好的修整器功能與耐久 性。這些技術係記載於下述的文獻（參照專利文獻1〜4 )° [專利文獻1 ]日本特開平1 1 - 3 0 0 6 0 1號公報 [專利文獻2]日本特開2001-341061號公報 [專利文獻3]日本特開2003-25230號公報 [專利文獻4]日本特開2003-94332號公報 【發明內容】 [發明所欲解決之課題] 上述習知的修整器對於使硏磨布的硏磨功能進一步穩 定與需求來說不夠充分，會有壽命短的缺點。本發明的目 的在於提供一種實用性高、且壽命長的鑽石修整器。 [用以解決課題之手段] 本發明係分別依據如次的構成，解決上述課題。 (構成1 ) -5- 200821093 一種鑽石修整器，係將用以硏磨半導體晶圓的CMP 裝置中所使用之硏磨布（polishing cloth)的表面狀態加 以修整的修整器，其特徵爲：具備：圓板狀的修整器基板 ;和被設置於該修整器基板上，且藉由環狀凹溝隔開之同 心帶狀的複數鑽石砥粒黏接部；和經由黏接層被黏接於此 等鑽石砥粒黏接部表面的鑽石砥粒，且各鑽石砥粒黏接部 ，係各自黏接不同種類的鑽石砥粒，且鑽石砥粒黏接後之 修整器的表面係以形成大致平坦面的方式進行調整。 由於設有同心帶狀的複數鑽石砥粒黏接部，以各自黏 接不同種類的鑽石砥粒，所以可一邊抑制硏磨布的磨損， 一邊將其表面粗度最適當化。 (構成2 ) 一種鑽石修整器，係如構成1之鑽石修整器，其特徵 爲：在修整器基板的表面形成有環狀凹溝，且形成有同心 帶狀的複數鑽石砥粒黏接部。 可將修整器以一體型形成牢固的構造。 (構成3 ) 一種鑽石修整器，係如構成1之鑽石修整器，其特徵 爲：上述鑽石砥粒黏接部係各自藉由環狀塊所構成，且被 嵌入形成於修整器基板上的凹陷部，且藉由螺栓固定或黏 接劑固定。 由環狀塊所構成的鑽石砥粒黏接部可自由且容易地更 -6- 200821093 換，維修性良好。 (構成4 ) 一種鑽石修整器，係如構成1或2之鑽石修整器，其 特徵爲：在修整器基板上，設有彼此藉由環狀凹溝隔開之 外周的帶狀部和內周的帶狀部和中心圓部，且在外周的帶 狀部黏接有JIS規格#400〜#80之粒度的鑽石砥粒，在內 周的帶狀部黏接有比外周的帶狀部更小粒徑之粒度的鑽石 砥粒。 可用外周之粒徑較大的鑽石砥粒，快速地在硏磨布製 作新的面，且用內周之粒徑較小的鑽石砥粒，細緻地加以 精整完成。 (構成5 ) 一種鑽石修整器，係如構成1或2之鑽石修整器，其 特徵爲：在修整器基板上，設有彼此藉由環狀凹溝隔開之 外周的帶狀部和內周的帶狀部和中心圓部，且在外周的帶 狀部黏接有JIS規格#400〜#80之粒度的鑽石砥粒，在內 周的帶狀部黏接有比外周的帶狀部更大粒徑之粒度的鑽石 砥粒。 可用外周之粒徑較小的鑽石砥粒製作新的面，且用內 周之粒徑較大的鑽石砥粒，粗糙地加以精整完成。因此， 可一邊使硏磨布的磨損成爲最小，一邊將其表面粗度調整 成充分的粗度。 200821093 (構成6) 一種鑽石修整器，係如構成1或2之鑽石修整器，其 特徵爲：在修整器基板上，設有彼此藉由環狀凹溝隔開之 外周的帶狀部和內周的帶狀部和中心圓部，且在外周的帶 狀部黏接有塊狀（bio cky )的鑽石砥粒，在內周的帶狀部 黏接有銳利狀（sharp )的鑽石砥粒。 塊狀的鑽石砥粒之邊緣的尖銳度比銳利狀（sharp ) 的鑽石砥粒低。又，前者比後者更不易產生機械性破損也 容易脫落。因此，先用塊狀的鑽石砥粒磨削表面變粗的硏 磨布，然後再用銳利狀的鑽石砥粒加以精整完成。依此， 修整器的耐久性得以提升。 (構成7 ) 一種鑽石修整器，係如構成6之鑽石修整器，其特徵 爲：在外周的帶狀部黏接有塊狀的鑽石砥粒，在內周的帶 狀部黏接有銳利狀的鑽石砥粒，且在外周的帶狀部黏接有 比內周的帶狀部更小粒徑的鑽石砥粒。 將銳利狀的鑽石砥粒形成粒徑大的構成，以使耐久性 提升。 (構成8 ) 一種鑽石修整器，係如構成6之鑽石修整器，其特徵 爲：在外周的帶狀部黏接有塊狀的鑽石砥粒，在內周的帶 -8- 200821093 狀部黏接有銳利狀的鑽石砥粒，且在外周的帶狀部黏接有 比內周的帶狀部更小粒徑的鑽石砥粒。 可用內周之粒徑較小的鑽石砥粒細緻地精整完成。 (構成9 ) 一種鑽石修整器，係如構成1或2之鑽石修整器，其 特徵爲：在修整器基板上，設有彼此藉由環狀凹溝隔開之 外周的帶狀部和內周的帶狀部和中心圓部，且將修整器基 板的半徑設成1 00時，係以外周帶狀部的寬度成爲2以上 3 〇以下，內周帶狀部的寬度成爲2以上5 0以下，中心圓 部的半徑成爲20以上的方式選定尺寸。 若中心圓部的半徑未滿20的話，中心部的圓周速度 (circumferential velocity )較慢，所以無法進行充分的 修整。外周帶狀部的寬度與內周帶狀部的寬度，只要依照 用外周的帶狀部於硏磨布作成新的面，且用內周的帶狀部 進行精整完成的分工來選定即可。 (構成1 0 ) 一種鑽石修整器，係如構成9之鑽石修整器，其特徵 爲：內周帶狀部在半徑方向的尺寸係比外周帶狀部長。 爲了使硏磨布的精整完成功能充分地發揮，故以內周 帶狀部的寬度較寬爲佳。 (構成1 1 ) -9 - 200821093 一種鑽石修整器，係如構成1至9之鑽石修整器，其 特徵爲：在外周帶狀部的最外周存有斜面，且在該斜面也 有黏接鑽石砥粒。 修整器基板被推壓至硏磨布時，斜面會最先接觸到硏 磨布。因此，由於在該處黏接有鑽石砥粒，所以硏磨效率 得以提升。 (構成1 2 ) 一種鑽石修整器，係如構成1 1之鑽石修整器，其特 徵爲：斜面上黏接有比其他面更大粒徑的鑽石砥粒。 由於該部分最會施加機械應力，所以黏接強度高且粒 徑大的鑽石砥粒。 (構成1 3 ) 一種鑽石修整器，係如構成1至9之鑽石修整器，其 特徵爲：在藉由環狀凹溝所隔開之各帶狀部的上面與側面 ，黏接有鑽石砥粒。 依此，可牢固地固定鑽石砥粒至溝的邊緣爲止。此外 ，可廣泛有效地利用基板面。 (構成1 4 ) 一種鑽石修整器，係硏磨半導體晶圓之CMP裝置中 的硏磨布之修整器，其特徵爲：具備：圓板狀的修整器基 板；和一體膨出於該修整器基板的表面，而連成形成於外 -10· 200821093 周邊的環狀之短圓弧狀的鑽石砥粒黏接部；和在連成該環 狀之短圓弧狀之複數鑽石砥粒黏接部的內側，形成漩渦狀 之短圓弧狀的複數鑽石砥粒黏接部；和經由黏接層黏接於 該複數鑽石砥粒黏接部的上面與側面的上方之複數種鑽石 砥粒，且上述複數鑽石砥粒黏接部係黏接不同種類的鑽石 砥粒，且將黏接各鑽石砥粒後之修整器的表面形成同一平 面狀。 【實施方式】 以下，使用圖面，詳細說明本發明之鑽石修整器的實 施例。第1圖係實施例1之鑽石修整器的平面圖。第2圖 係實施例1之鑽石修整器的主要部分剖面圖。第3圖係實 施例2之鑽石修整器的主要部分剖面圖。第4圖係實施例 3之鑽石修整器的主要部分剖面圖。第5圖係實施例4之 鑽石修整器的主要部分剖面圖。第6圖係說明實施例5之 鑽石砥粒黏接部的配設例之平面圖。第7圖係使用鑽石修 整器之CMP硏磨裝置例的斜視圖。第8圖與第9圖係實 證上述鑽石修整器之作用效果的說明圖。 第7圖所示的CMP硏磨裝置（化學機械硏磨機器） 係使用硏磨布（polishing cloth) C，硏磨半導體晶圓 W 。鑽石修整器1係修整該硏磨布C。半導體晶圓W的硏 磨製程具有ILD、STI、Cu製程。CMP硏磨裝置在各個製 程，需要不同的硏磨條件。200821093 IX. Description of the Invention [Technical Field of the Invention] The present invention relates to the surface condition of a honing cloth used in a CMP apparatus (chemical mechanical polishing machine) for honing a semiconductor wafer. Diamond trimmer. The singularity of the spheroidal crystal is in the form of a spheroidal spheroidal slab. The white slab is rounded into a long crystal. The knot will be made by the system /T round and the 1 曰 S® body will be transferred to the STD, ILD, W, Cu process, etc. with the first half plus the first thickness. In these steps, the semiconductor wafer is chemically and mechanically honed by a CMP apparatus. In the CMP apparatus, a semiconductor wafer is etched using a liquid or the like to which an alkaline liquid or an acidic liquid or a neutral chelating agent is added to perform chemical honing. Next, mechanical honing was carried out using sand fine particles (free granules). This honing accuracy has a large impact on the quality of the semiconductor wafer. The CMP apparatus pushes a semiconductor wafer sandwiched by a chuck mechanism onto a honing cloth to perform honing. The honing cloth is stretched on a disc-shaped honing plate. The honing plate is rotated by a rotating mechanism on the lower side. The chuck mechanism is fixed to the lower end of the main shaft that rises and falls above the honing plate. The spindle system and the honing plate rotate in the opposite direction. The semiconductor wafer system sandwiched by the chuck mechanism is pressed against the honing cloth while being rotated by the spindle. In the honing treatment, a slurry containing sand particles or the like mixed in a lye or the like is dropped on the honing cloth. When the honing cloth is used for a long time in the CMP apparatus, the flatness of the honing surface will be lowered by 200821093, and clogging will occur. At the same time, the honing accuracy or honing efficiency of semiconductor wafers is reduced. Thus, a dresser that trims the surface state of the honing cloth is used. The dresser is formed into a disc shape that can be pushed against the honing cloth for rotation. A robotic arm that supports the dresser moves the dresser over the honing cloth. By this action, the dresser can uniformly contact the entire surface of the honing cloth. The dresser grinds the surface of the honing cloth to create a new surface while optimizing the surface roughness. The dresser is required to have an efficient finisher function and durability. These documents are described in the following documents (see Patent Documents 1 to 4). [Patent Document 1] Japanese Laid-Open Patent Publication No. JP-A No. 2001-341061 [Patent Document 3] Japanese Laid-Open Patent Publication No. 2003-94332 [Patent Document 4] JP-A-2003-94332 SUMMARY OF INVENTION [Problems to be Solved by the Invention] The above-described conventional dresser is used for honing cloth. The honing function is further insufficient and the demand is insufficient, and there is a shortcoming of short life. It is an object of the present invention to provide a diamond dresser that is highly practical and has a long life. [Means for Solving the Problem] The present invention solves the above problems in accordance with the configuration of the second embodiment. (Configuration 1) -5- 200821093 A diamond dresser which is a trimmer for trimming the surface state of a polishing cloth used in a CMP apparatus for honing a semiconductor wafer, characterized in that: a disc-shaped finisher substrate; and a plurality of concentric ribbon-shaped diamond-grain bonded portions disposed on the trimmer substrate and separated by an annular groove; and bonded to the adhesive layer via the adhesive layer The diamond granules on the surface of the diamond granules are bonded to each other, and the diamond granules are bonded to different types of diamond granules, and the surface of the trowel after the diamond granules are bonded to form a rough surface. Adjust the flat surface. Since there are a plurality of concentric ribbon-shaped diamond-grain bonded portions, each of which is bonded to different types of diamond crucibles, the surface roughness can be optimized while suppressing the abrasion of the honing cloth. (Configuration 2) A diamond dresser comprising the diamond dresser of the first embodiment, wherein an annular groove is formed on a surface of the dresser substrate, and a plurality of diamond-grain bonded portions in a concentric band shape are formed. The trimmer can be formed into a solid construction in one piece. (Configuration 3) A diamond dresser, such as the diamond dresser of the first aspect, characterized in that: the diamond enamel bonding portions are each formed by a ring block and embedded in a recess formed on the substrate of the dresser. And fixed by bolts or adhesives. The diamond granule bonding portion composed of the annular block can be freely and easily replaced by -6-200821093, and the maintainability is good. (Configuration 4) A diamond dresser, such as the diamond dresser of the 1 or 2, characterized in that the trimmer substrate is provided with a strip portion and an inner circumference which are separated from each other by an annular groove In the strip portion and the center round portion, the diamond granules of the JIS size #400 to #80 are adhered to the strip portion on the outer circumference, and the strip portion on the inner circumference is bonded to the strip portion at the outer circumference. A small particle size diamond granule. Diamond granules with a larger diameter on the outer circumference can be used to quickly make a new surface on the honing cloth, and the diamond granules having a smaller particle diameter in the inner circumference can be finely finished. (Configuration 5) A diamond dresser, such as the diamond dresser of the 1 or 2, characterized in that the trimmer substrate is provided with a strip portion and an inner circumference which are separated from each other by an annular groove In the strip portion and the center round portion, the diamond granules of the JIS size #400 to #80 are adhered to the strip portion on the outer circumference, and the strip portion on the inner circumference is bonded to the strip portion at the outer circumference. Large particle size diamond granules. A new surface can be made from diamond granules having a smaller outer diameter, and the diamond granules having a larger inner diameter can be coarsely finished. Therefore, the surface roughness can be adjusted to a sufficient thickness while minimizing the abrasion of the honing cloth. 200821093 (Embodiment 6) A diamond dresser, such as a diamond dresser constituting 1 or 2, characterized in that: on the finisher substrate, a strip portion and an inner portion which are separated from each other by an annular groove are provided The band and the central part of the circumference, and the biocky diamond particles are adhered to the outer band, and the sharp diamonds are adhered to the inner band. . The sharpness of the edges of the massive diamonds is lower than that of the sharp diamonds. Moreover, the former is less prone to mechanical damage than the latter and is also likely to fall off. Therefore, first grind the surface of the honing cloth with a block of diamond granules, and then finish it with sharp diamond granules. Accordingly, the durability of the dresser is improved. (Structure 7) A diamond dresser, such as the diamond dresser of the sixth aspect, characterized in that a block-shaped diamond enamel is adhered to the outer band portion, and a sharp shape is adhered to the inner band portion. The diamond granules are bonded to the outer band and have a smaller particle size than the inner band. The sharp-shaped diamond granules are formed into a large particle size to improve durability. (Structure 8) A diamond dresser, such as the diamond dresser of the sixth embodiment, is characterized in that: a block-shaped diamond enamel is adhered to the outer band portion, and the inner band is -8-200821093-shaped. A sharp diamond-shaped enamel is attached, and a diamond granule having a smaller particle diameter than the inner circumferential band is adhered to the outer band portion. Finely finished diamond fines with a smaller inner diameter can be used. (Configuration 9) A diamond dresser, such as the diamond dresser of the 1 or 2, characterized in that the trimmer substrate is provided with a strip portion and an inner circumference which are separated from each other by an annular groove When the radius of the outer layer of the dresser substrate is set to 100, the width of the outer peripheral strip portion is 2 or more and 3 〇 or less, and the width of the inner peripheral strip portion is 2 or more and 50 or less. The size of the center circle portion is selected to be 20 or more. If the radius of the center circle is less than 20, the circumferential velocity of the center portion is slow, so that it is not possible to perform sufficient trimming. The width of the outer peripheral strip portion and the width of the inner peripheral strip portion may be selected in accordance with the division of the inner peripheral strip portion into a new surface by the strip portion on the outer circumference and finishing by the inner strip portion. . (Structure 10) A diamond dresser, such as the diamond dresser of the ninth aspect, characterized in that the inner circumferential strip has a dimension in the radial direction which is larger than the outer peripheral strip shape. In order to fully exert the finishing completion function of the honing cloth, it is preferable that the width of the inner circumferential band portion is wider. (Form 1 1) -9 - 200821093 A diamond dresser, such as a diamond dresser constituting 1 to 9, characterized in that a bevel is present on the outermost periphery of the outer band, and a diamond is bonded to the bevel. grain. When the dresser substrate is pushed against the honing cloth, the bevel will first come into contact with the honing cloth. Therefore, the honing efficiency is improved because the diamond granules are adhered there. (Structure 1 2) A diamond dresser, such as a diamond dresser constituting a lens, is characterized in that a diamond granule having a larger particle diameter than other faces is adhered to the inclined surface. Since this part exerts the most mechanical stress, the diamond granules have high bonding strength and large particle diameter. (Structure 1 3) A diamond dresser, such as the diamond dresser of 1 to 9, characterized in that a diamond enamel is adhered to the upper surface and the side surface of each of the strip portions separated by the annular groove. grain. Accordingly, the diamond particles can be firmly fixed to the edge of the groove. In addition, the substrate surface can be utilized widely and effectively. (Configuration 1 4) A diamond dresser which is a dresser for honing cloth in a CMP apparatus for honing a semiconductor wafer, comprising: a disk-shaped finisher substrate; and an integral expansion of the dresser The surface of the substrate is connected to a ring-shaped short arc-shaped diamond enamel bonding portion formed around the outer-10·200821093; and a plurality of diamond granules bonded in a short arc shape connected to the ring a plurality of diamond enamel bonding portions formed in a short arc shape in a spiral shape on the inner side; and a plurality of diamond granules bonded to the upper surface and the side surface of the plurality of diamond enamel bonding portions via an adhesive layer, Moreover, the plurality of diamond enamel bonding portions are bonded to different types of diamond enamel, and the surface of the dresser after bonding the diamond granules is formed into the same plane shape. [Embodiment] Hereinafter, an embodiment of a diamond dresser of the present invention will be described in detail using the drawings. Figure 1 is a plan view of the diamond dresser of Embodiment 1. Fig. 2 is a cross-sectional view showing the main part of the diamond dresser of the first embodiment. Fig. 3 is a cross-sectional view showing the main part of the diamond dresser of the second embodiment. Fig. 4 is a cross-sectional view showing the main part of the diamond dresser of the embodiment 3. Fig. 5 is a cross-sectional view showing the main part of the diamond dresser of the fourth embodiment. Fig. 6 is a plan view showing an arrangement example of the diamond granule bonding portion of the fifth embodiment. Fig. 7 is a perspective view showing an example of a CMP honing device using a diamond dresser. Fig. 8 and Fig. 9 are explanatory views showing the effect of the above-described diamond dresser. The CMP honing device (chemical mechanical honing machine) shown in Fig. 7 is a honing semiconductor wafer W by using a polishing cloth C. The diamond dresser 1 is used to trim the honing cloth C. The honing process of the semiconductor wafer W has an ILD, STI, and Cu process. CMP honing devices require different honing conditions in each process.
如第7圖（a )所示，CMP硏磨裝置係藉由旋轉軸A -11 - 200821093 將設置於該旋轉軸A之上端的硏磨板B予以旋轉驅動。 該硏磨板B上張設有硏磨布C。在硏磨板B的上方，配置 有與旋轉軸A逆向旋轉之昇降自如的主軸D°設置於主軸 D下端的夾盤機構E，係夾著半導體晶圓W。一邊將鹼液 等中混合有矽微粒子等的硏磨液（slurry)滴在硏磨布C 的上面，一邊使半導體晶圓w與硏磨板B旋轉。依此， 將半導體晶圓W施行CMP硏磨加工。 當硏磨布C長時間持續進行CMP硏磨加工時，硏磨 面的平坦度會降低。而且，會產生堵塞。這會使半導體晶 圓 W之硏磨精度或硏磨效率降低。因此，設有從硏磨板 B的側邊朝硏磨布C的上方突出且可進退的機械臂F。在 該機械臂F的前端設置旋轉軸，在該旋轉軸的下端則固定 修整器1。接著，一邊使修整器1至少從硏磨板B的外周 至中心附近的範圍進退，一邊使其旋轉。依此，利用修整 器1來修整硏磨布C的狀態（condition)。 如第7圖（b )所示，修整器1係在稍爲傾斜的狀態 被推壓於硏磨布C而朝箭號10的方向移動。最初，從修 整器1的行進方向（箭號10的方向）觀看，前方的外周 緣部係與硏磨布接觸。然後，修整器1的外周部與硏磨布 接觸。修整器1的外周部有助於生成硏磨布之新的面的處 理。繼之，修整器1的內周部與硏磨布接觸。在此，進行 精整完成處理。從修整器1的行進方向觀看，後方的部分 有助於精整完成處理。 -12- 200821093 [實施例1] 如第1圖的平面圖與第2圖的縱剖面圖所示，修整器 基板2係在兩處刻設有環狀凹溝3的圓盤狀。此乃由例如 不銹鋼等的金屬或鋁陶瓷等所形成。又，亦可由硬質塑膠 構成。 複數的鑽石砥粒黏接部4係在修整器基板2的表面， 隔著環狀凹溝3形成同心狀。在圖的例子中，於兩處刻設 有環狀凹溝3。藉此構成，形成有位於中央邊的圓形鑽石 砥粒黏接部4A、和其外側的帶狀鑽石砥粒黏接部4B、和 最外側的帶狀鑽石砥粒黏接部4C。 此外，第1圖的實施例中，係於兩處刻設有環狀凹溝 3。然而，亦可爲一處，亦可爲三處。形成一處時，鑽石 砥粒黏接部成爲兩個。形成三處時，鑽石砥粒黏接部成爲 四個。此外，如之後說明所示，在中心部的圓形部分沒有 黏接鑽石砥粒亦可。將鑽石修整器推壓到硏磨布，以開始 進行修整時，其推壓力會使整體稍爲彎曲。亦即，鑽石修 整器會因推壓力而彈性變形。具有環狀溝的圓板比完全沒 有溝的圓板，更容易因推壓力而彈性變形。兩條環狀凹溝 係鑽石砥粒群之粒徑變化的交界部分。在此可將圓板彎折 。依此，可提高內周部分決定硏磨布之精整完成面粗度的 效果。As shown in Fig. 7(a), the CMP honing device rotationally drives the honing plate B provided at the upper end of the rotating shaft A by the rotating shafts A -11 - 200821093. The honing plate B is provided with a honing cloth C. Above the honing plate B, a chuck mechanism E which is disposed at a lower end of the spindle D with a spindle D which is freely movable in the reverse direction of the rotation axis A is disposed, and the semiconductor wafer W is interposed therebetween. The semiconductor wafer w and the honing plate B are rotated while dropping a slurry of ruthenium or the like mixed with a lye or the like on the upper surface of the honing cloth C. Accordingly, the semiconductor wafer W is subjected to CMP honing processing. When the honing cloth C continues to perform CMP honing for a long time, the flatness of the honing surface is lowered. Moreover, blockages can occur. This reduces the honing accuracy or honing efficiency of the semiconductor wafer W. Therefore, a mechanical arm F that protrudes from the side of the honing plate B toward the upper side of the honing cloth C and that can advance and retreat is provided. A rotating shaft is provided at the front end of the robot arm F, and the dresser 1 is fixed to the lower end of the rotating shaft. Next, the dresser 1 is rotated while being advanced and retracted from at least the outer circumference of the honing plate B to the vicinity of the center. Accordingly, the trimmer 1 is used to trim the condition of the honing cloth C. As shown in Fig. 7(b), the dresser 1 is pressed against the honing cloth C in a slightly inclined state to move in the direction of the arrow 10. Initially, the outer peripheral edge portion of the front side is in contact with the honing cloth as viewed from the traveling direction of the dresser 1 (the direction of the arrow 10). Then, the outer peripheral portion of the dresser 1 is in contact with the honing cloth. The outer peripheral portion of the dresser 1 contributes to the process of generating a new face of the honing cloth. Then, the inner peripheral portion of the dresser 1 is in contact with the honing cloth. Here, the finishing completion processing is performed. Viewed from the direction of travel of the dresser 1, the rear portion facilitates finishing. -12-200821093 [Embodiment 1] As shown in the plan view of Fig. 1 and the longitudinal sectional view of Fig. 2, the dresser substrate 2 has a disk shape in which annular groove 3 is formed at two places. This is formed of a metal such as stainless steel or an aluminum ceramic. Also, it can be made of hard plastic. A plurality of diamond enamel bonding portions 4 are formed on the surface of the finisher substrate 2, and are formed concentrically via the annular grooves 3. In the example of the figure, an annular groove 3 is formed at two places. According to this configuration, a circular diamond enamel bonding portion 4A located at the center side, a band-shaped diamond enamel bonding portion 4B on the outer side, and an outermost band-shaped diamond enamel bonding portion 4C are formed. Further, in the embodiment of Fig. 1, annular groove 3 is formed at two places. However, it can be one place or three places. When one is formed, the diamond 黏 grain bond becomes two. When three places are formed, the diamond granules are bonded to four. Further, as will be described later, the diamond portion may not be bonded to the circular portion of the center portion. When pushing the diamond dresser to the honing cloth to start trimming, the pushing force will slightly bend the whole. That is, the diamond dresser is elastically deformed by the pressing force. A circular plate having an annular groove is more elastically deformed by a pressing force than a circular plate having no groove at all. The two annular grooves are the junctions of the particle size changes of the diamond granules. Here the disc can be bent. Accordingly, the effect of the inner peripheral portion determining the thickness of the finished surface of the honing cloth can be improved.
複數種的鑽石砥粒6A、6B、6C係人工鑽石的砥粒。 各鑽石砥粒黏接部4A、4B、4C的鑽石砥粒6A、6B、6C 係各自爲例如粒度相異。又，例如粒度相同，但各自的硬 -13- 200821093 度不同。再者，例如一側的粒子形狀具有圓形部，另一側 的粒子具有銳角部。如上所述，各自使種類相異。將粒子 的形狀具有圓形部者稱爲塊狀者（biocky )，將粒子具有 銳角部者稱爲銳利狀者（sharp )。以相同的粒度從塊狀 至銳利狀，挑選例如記載於鑽石創新公司（DIAMOND INNOVATIONS，INC.)的目錄者即可。 在各個鑽石砥粒黏接部4的上面與側邊的上面，經由 黏接層5黏接有鑽石砥粒6A、6B、6C。如第2圖等所示 ，在位於最外周之鑽石砥粒黏接部4的外周緣部形成有斜 面。該斜面的上方亦經由黏接層5黏接有鑽石砥粒6C。 該實施例中，即便將種類各自不同的鑽石砥粒6A、 6B、6C黏接於各鑽石砥粒黏接部4A、4B、4C的上面， 黏接後之鑽石修整器1的表面亦可被調整成同一平面狀。 因此，該例子中，基板2表面的高度是可被調整的。實際 上，高度差在〇.5mm左右以內是可充分被容許的。因此 ，鑽石修整器1的表面只要形成大致平坦面即可。若各鑽 石砥粒之外徑的差沒有超過〇.5mm的話，就不需要調整 基板的高度。更且’環狀凹溝不一定要在基板上切割而形 成。將各自爲不同種類的鑽石磁粒6A、6B、6C隔著一定 間隔黏接成環狀時’即可自動在其間形成凹溝。此也稱爲 環狀凹溝。 以下，說明黏接各自爲不同種類之鑽石砥粒的意義。 (例子1 ) -14- 200821093 首先，第一個例子，係在外周的帶狀部黏接有塊狀鑽 石砥粒，在內周的帶狀部黏接有銳利狀鑽石砥粒。由於位 於中央邊之圓形部分的旋轉速度較慢，硏磨效果較小，所 以也可不黏接鑽石砥粒。第二個例子，係在外周的帶狀部 黏接JIS規格#400以上#80以下之粒度的鑽石砥粒，在內 周的帶狀部黏接粒徑大於外周帶狀部之粒度的鑽石砥粒。 若超過#400時，硏磨效果過小。又，若在#80以下的話， 則精整完成後的面粗度容易變粗，所以該範圍是合適的。 此外，JIS規格#400〜#80之粒度的平均粒徑爲大約45 // m至大約2 5 0 // m。較理想是平均粒徑爲2 0 %差異即可 。與平均粒徑未滿20 %的差，全部使用同一種類之鑽石 砥粒的情況相比較，效果的差不會充分出現。 著眼於固定於修整器的面之鑽石砥粒的粒徑時，粒徑 越大的話，精整完成後之硏磨布的表面粗度越粗。砥粒的 粒徑越大的話，切削硏磨布的速度越快。砥粒的粒徑越大 的話，硏磨布在精整完成後的面粗度變得越粗。但是，前 提條件是，鑽石砥粒係以大致同樣的條件製造者。 著眼於鑽石砥粒的表面狀態時，表面尖銳度越高、越 銳利者，硏磨就越利。例如，雜質多的鑽石砥粒，其表面 不規則的凹凸較多，表面尖銳度較高。即便是相同粒徑的 砥粒，相較於表面尖銳度較低的塊狀者，表面尖銳度較高 者其切削硏磨布的速度較快。表面尖銳度較高者，精整完 成後之硏磨布的表面粗度會變粗。此外，鑽石砥粒6的硬 度爲硬質者，硏磨能力會變高；爲軟質者，硏磨能力則會 -15- 200821093 變低。 修整硏磨布的表面時，首先，將變粗的面切削一定量 以產生新的面，然後，精整完成爲所欲達成之目的的表面 粗度。習知，係使用整面固定有均勻同質之鑽石砥粒的一 片圓板。然而，僅用大粒徑的鑽石砥粒將變粗的面切削至 精整完成爲止時，在產生新的面時，會過度磨削硏磨布， 硏磨布的耗損極劇變快。也就是說，在進行精整完成處理 前，會過度磨削硏磨布。 於是，先用外周的塊狀鑽石砥粒，磨削表面變粗的硏 磨布，接著，用內周的銳利狀鑽石砥粒，加以精整完成。 又，或者，先用外周之粒徑較小的鑽石砥粒，作成硏磨布 的新的面，然後，再用內周之粒徑較大的鑽石砥粒，進行 精整完成處理。依此，修整器的耐久性得以提升。任一者 的情況，皆可一邊將硏磨布的磨損變成最小，一邊將精整 完成時的表面粗度調整成充分的粗度。 黏接於修整器基板2之外周帶狀部的鑽石砥粒，係以 高速且高壓接觸硏磨布。又，修整器基板2的外周附近在 與硏磨布面垂直之方向的振動係比內周附近激烈。因此， 鑽石砥粒容易機械性破損也容易脫落。然而，粒徑較小的 鑽石砥粒或塊狀鑽石砥粒的機械強度，係比粒徑較大的鑽 石砥粒或銳利狀鑽石砥粒的機械強度強。更且，磨削硏磨 布時，機械阻力也比較小。因此，耐久性較高。基板整體 的強度也可平均化，具有整體的耐久性變優良的效果。 例如，在CMP硏磨裝置的ILD製程中，需要較快的 200821093 半導體晶圓W的硏磨速度。若將硏磨布C的表面粗度變 粗時’半導體晶圓W的硏磨速度會變快。由於粒徑較大 的鑽石砥粒或銳利的鑽石砥粒，其機械性負載較大，所以 容易脫落且磨損也很厲害。因此，成爲在CMP硏磨裝置 之加工後的半導體晶圓W產生劃痕（scratch )的原因。 於是，如上所述，在基板外周的帶狀部，配置粒徑較 小的鑽石胝粒或塊狀的鑽石砥粒。例如，使用MB G6 80 ( 鑽石創新公司製、平均粒徑X=160//m)作爲塊狀的鑽石 砥粒。又，使用MBG620(同上、平均粒徑X=160//m) ，作爲銳利的鑽石砥粒。 藉由上述構成，與基板整面使用MBG620 (鑽石創新 公司製）的情形相比較，可獲得半導體晶圓W的劃痕（ scratch )壓倒性較少的結果。在內周的帶狀部，，使用銳利 的鑽石砥粒MBG620時，精整完成後之硏磨布C的表面 粗度任一者皆成爲相同程度。 此外，以外周的帶狀部在硏磨布製作新的面時，必須 進行過度磨削的調整。因此，以內周帶狀部在半徑方向的 尺寸變得比外周帶狀部長的方式，選定帶狀部的寬度即可 。更具體來說，將修整器基板的半徑設成1 〇〇時，係以外 周帶狀部的寬度爲2以上30以下，內周帶狀部的寬度成 爲2以上50以下，中心圓部的半徑成爲20以上的方式選 定尺寸爲佳。若外周帶狀部的寬度爲2以下時，外周帶狀 部的設置就變得沒有意義。若外周帶狀部的寬度超過3 0 時，內周帶狀部的有效寬度會變得太窄。若內周帶狀部的 -17- 200821093 寬度未滿2時，內周帶狀部的設置就變得沒有意義。若內 周帶狀部的寬度超過5 0時，則無法設置有效的外周帶狀 部。中心圓部的半徑是決定外周與內周之帶狀部後剩餘的 部分，會自動設定。 (例子2 ) 又，CMP硏磨裝置的STI製程中，期望半導體晶圓 W的劃痕進一步減少。而且，期望有壽命更長的修整器。 於是，習知技術中，考慮使用粒徑更小的Μ B G 6 8 0作爲鑽 石砥粒來取代MBG620。然而，只使用MBG680的修整器 ，會有硏磨速度慢的缺點。 於是，在外周的帶狀部使用小粒徑的鑽石砥粒（平均 粒徑X=90//m)，在內周的帶狀部使用大粒徑的鑽石砥 粒（X = 1 60 // m )。依此，修整器之外周帶狀部的機械強 度會增加，劃痕會減少。又，藉由內周帶狀部之大粒徑的 鑽石砥粒，可將硏磨布C的表面粗度充分地變粗，所以硏 磨布所致之半導體晶圓 W的硏磨速度也會變快。而且， 具有處理速度整體提升，且修整器的壽命變成約兩倍的效 果0 (例子3 ) 另一方面，在CMP硏磨裝置的Cu製程中，凹陷、腐 蝕（erosion )會成爲問題。已知硏磨布C的表面粗度越 細的話，凹陷、腐蝕越少。然而，使用例如較細的鑽石砥 -18- 200821093 粒（例如平均粒徑X = 1 〇 // m )時，凹陷、腐蝕雖然較少 ，但是會有鑽石修整器的壽命變得極短的問題。 於是，此例子中，在外周的帶狀部使用大粒徑的鑽石 砥粒（例如平均粒徑X = 40 // m )，在內周的帶狀部使用 小粒徑的鑽石砥粒（例如平均粒徑X = 1 〇 // m )。以使這 些砥粒的高度大致一致的方式來黏接爲佳。藉此構成，與 僅使用較細之鑽石砥粒的情形相比較（例如平均粒徑X = 10 // m )，凹陷、腐蝕可減少至大致相同程度。再者，鑽 石修整器的壽命可變成大約兩倍。 此外，實用上，以在外周的帶狀部黏接JIS規格#400 〜#80之粒度的鑽石砥粒，在內周的帶狀部黏接粒徑比外 周的帶狀部小之粒度的鑽石砥粒爲佳。此理由係與例子1 同樣。超過#400時，硏磨效果過小。又，在#80以下時， 精整完成後的面粗度會變得過粗，所以該範圍是合適的。 較理想的情況是，平均粒徑爲2 0 %以上差異即可。與平 均粒徑未滿20 %的差，全部同一相同種類之鑽石砥粒的 情況相比較，效果的差不會充分出現。例如，在中央邊之 圓形狀的鑽石砥粒黏接部，使用#200的鑽石砥粒6。在內 周帶狀部的鑽石砥粒黏接部4，使用#120的鑽石砥粒。在 外周帶狀部之環狀的鑽石砥粒黏接部4，使用#80的鑽石 砥粒6。依此，可獲得所欲達成之目的的功能。 又，如第2圖等所示，在各個鑽石砥粒黏接部4的上 面、與側面的上方，經由黏接層5黏接有鑽石砥粒6A、 6B、6C。在位於最外周之鑽石砥粒黏接部4的外周緣部 -19- 200821093 形成有斜面。在該斜面的上方亦經由黏接層5黏接有鑽石 砥粒6 C。如使用第7圖（b )的說明所示’鑽石修整器1 的外周緣、外周緣係成爲銳角’將硏磨布C的表面予以硏 磨。再者，帶狀部之外周緣的邊緣、圓形之鑽石砥粒黏接 部之外周緣的邊緣皆可進行硏磨。也就是說’可以良好效 率利用基板2整面來進行硏磨。 [實施例2] 如第3圖所示，鑽石砥粒黏接部4 D、4 E、4 F係分別 藉由環狀塊所構成。在修整器基板2上形成有凹陷部3D 、3E、3F。鑽石砥粒黏接部4D、4E、4F被嵌入這些凹陷 部3D、3E、3F。兩者係藉由螺栓固定或黏接劑固定。如 上所述，由環狀塊所構成的鑽石砥粒黏接部、4E、4F 可自由且容易地更換，所以具有維修性良好的特徵。 [實施例3] 實施例1中，係將黏接於各鑽石砥粒黏接部4A、4B 、4C之鑽石砥粒6A、6B、6C的粒度設成不同的構成。 並且，藉由調整鑽石砥粒黏接部4A、4B、4C的高度，來 吸收其粒子之大小的差異，以使修整器1的表面平坦。第 4圖所示的實施例3，係調整黏接劑之黏接層5的厚度， 以使修整器1的表面平坦。 [實施例4] -20- 200821093 實施例2中，係將黏接於各鑽石砥粒黏接部4D、4E 、4F之鑽石砥粒6D、6E、6F的粒度設成不同的構成。並 且，藉由調整塊狀鑽石砥粒黏接部4D、4E、4F的高度， 來吸收其粒子之大小的差異，以使修整器1的表面平坦。 第5圖所示的實施例4，係調整黏接劑之黏接層5的厚度 ，以使修整器1的表面平坦。 [實施例5 ] 在實施例5中，如第6圖所示，在圓板狀修整器基板 2的表面，配設有複數短圓弧狀的鑽石砥粒黏接部4G、 4H。這些鑽石砥粒黏接部4係以在修整器基板2的表面 ，分別膨出成一體的方式形成。此外，在修整器基板2的 外周邊，鑽石砥粒黏接部4G係以連成環狀的方式配設。 更且，在修整器基板2的內側，鑽石砥粒黏接部4H係配 設成漩渦狀。 在此，黏接於位於外周邊之鑽石砥粒黏接部4 G的鑽 石砥粒、與黏接於位於內側之鑽石砥粒黏接部4H的鑽石 砥粒係各自爲不同種類的構成。藉此，可發揮與上述實施 例同樣的功能。 第8圖係表示表面粗度與硏磨時間的關係之說明圖。 第8圖之圖表（graph )的縱軸係表示表面粗度Ra、橫軸 係表示硏磨時間（hr )。右側的數値係將外周帶狀部與內 周帶狀部之鑽石砥粒的粒徑以 JIS表示。例如，SD1 00-SD60意指，使用外周的帶狀部爲#1〇〇，且內周的帶狀部 -21 - 200821093 爲#60的鑽石砥粒。SD100 (只有外側）是表示在內周的 帶狀部沒有黏接鑽石砥粒。第8圖的圖表係將硏磨布之精 整完成後的表面粗度由內周帶狀部之鑽石砥粒的粒徑所決 定的情形加以實證。第9圖係表示硏磨布之硏磨速度的變 化之說明圖。第9圖之圖表的縱軸係表示硏磨速度（ // m/h〇 ，橫軸係表示硏磨時間（hr )。右側的數値係與 第8圖相同。第9圖的圖表係將硏磨布的硏磨速度亦由內 周帶狀部之鑽石砥粒的粒徑決定的情形加以實證。 【圖式簡單說明】 第1圖係實施例1之鑽石修整器的平面圖。 第2圖係實施例1之鑽石修整器的主要部分剖面圖。 第3圖係實施例2之鑽石修整器的主要部分剖面圖。 第4圖係實施例3之鑽石修整器的主要部分剖面圖。 第5圖係實施例4之鑽石修整器的主要部分剖面圖。 第6圖係說明實施例5之鑽石砥粒黏接部的配設例之 平面圖。 第7圖係使用鑽石修整器之CMP硏磨裝置例的斜視 圖。 第8圖係表示表面粗度與硏磨時間的關係之說明圖。 第9圖係表示硏磨布之硏磨速度的變化之說明圖。 【主要元件符號說明】 W =半導體晶圓 -22- 200821093 C :硏磨布 1 :鑽石修整器 2 :修整器基板 3 :環狀凹溝 4 :鑽石砥粒黏接部 5 :黏接層 6 :鑽石砥粒 -23-A variety of diamonds, 6A, 6B, and 6C are artificial diamonds. The diamond granules 6A, 6B, and 6C of each of the diamond granule adhering portions 4A, 4B, and 4C are, for example, different in particle size. Also, for example, the particle size is the same, but the respective hard -13 - 200821093 degrees are different. Further, for example, the particle shape on one side has a circular portion, and the particles on the other side have an acute angle portion. As described above, each makes the species different. The shape in which the shape of the particle has a circular portion is called a blocky one, and the one in which the particle has an acute angle is called a sharp one. For the same granularity, from block to sharp, you can select, for example, the catalogue of DIAMOND INNOVATIONS, INC. Diamond enamel particles 6A, 6B, and 6C are adhered to the upper surface of the diamond enamel bonding portion 4 and the upper side of the side of the diamond enamel bonding portion 4 via the adhesive layer 5. As shown in Fig. 2 and the like, a slope is formed on the outer peripheral edge portion of the diamond enamel bonding portion 4 located at the outermost periphery. Diamond granules 6C are also adhered to the upper side of the inclined surface via the adhesive layer 5. In this embodiment, even if the diamond granules 6A, 6B, and 6C of different types are bonded to the respective diamond granule bonding portions 4A, 4B, and 4C, the surface of the bonded diamond dresser 1 can be Adjust to the same plane shape. Therefore, in this example, the height of the surface of the substrate 2 can be adjusted. In fact, the height difference is within 55mm or so. Therefore, the surface of the diamond dresser 1 only needs to form a substantially flat surface. If the difference in the outer diameter of each diamond particle does not exceed 〇.5 mm, it is not necessary to adjust the height of the substrate. Further, the annular groove is not necessarily formed by cutting on the substrate. When the different types of diamond magnetic particles 6A, 6B, and 6C are bonded to each other at regular intervals, a groove is automatically formed therebetween. This is also known as an annular groove. Hereinafter, the meaning of bonding each of the different types of diamond particles will be described. (Example 1) -14- 200821093 First, in the first example, a block-shaped diamond granule was adhered to the outer band, and a sharp diamond granule was adhered to the inner band. Since the circular portion located at the center side has a slower rotation speed, the honing effect is less, so that the diamond granules are not bonded. In the second example, the diamond granules of the particle size of JIS size #400 or more and below 80% are adhered to the outer band of the outer band, and the diamond granules having a particle size larger than the outer band shape of the inner band at the inner circumference are bonded. grain. If it exceeds #400, the honing effect is too small. Further, if it is equal to or less than #80, the surface roughness after finishing is likely to be coarse, so this range is suitable. Further, the average particle diameter of the particle size of JIS specifications #400 to #80 is from about 45 // m to about 2 50 // m. Preferably, the average particle size is 20% difference. The difference in effect is not sufficient when the difference between the average particle diameter and the average particle diameter is less than 20%, and the same type of diamond is used. When focusing on the particle size of the diamond granules fixed to the surface of the dresser, the larger the particle size, the coarser the surface roughness of the honing cloth after finishing. The larger the particle size of the granules, the faster the honing cloth is cut. The larger the particle size of the granules, the coarser the surface roughness of the honing cloth after the finishing is completed. However, the precondition is that the diamond granules are manufactured under substantially the same conditions. When looking at the surface state of the diamond granules, the sharper the surface and the sharper the sharper, the more profitable. For example, diamond granules with a large amount of impurities have irregular irregularities on the surface and high surface sharpness. Even the granules of the same particle size have a higher surface sharpness than those with a lower surface sharpness, and the honing cloth is faster. If the surface sharpness is high, the surface roughness of the honing cloth after finishing is thickened. In addition, if the hardness of the diamond granules 6 is hard, the honing ability will become higher; for the softer ones, the honing ability will be lower -15-200821093. When trimming the surface of the honing cloth, first, the roughened surface is cut by a certain amount to create a new surface, and then the finishing is performed to achieve the surface roughness for the intended purpose. It is known to use a circular plate in which a uniform homogenous diamond crucible is fixed over the entire surface. However, when the roughened surface is cut only by the large-diameter diamond granules until the finish is completed, the honing cloth is excessively ground when a new surface is produced, and the wear of the honing cloth is extremely fast. That is to say, the honing cloth is excessively ground before the finishing process is completed. Then, the outer surface of the block-shaped diamond granules is used to grind the honing cloth having a thick surface, and then the inner peripheral sharp-shaped diamond granules are used for finishing. Alternatively, the diamond granules having a smaller particle diameter on the outer circumference may be used as the new surface of the honing cloth, and then the diamond granules having a larger inner diameter may be used for finishing. Accordingly, the durability of the dresser is improved. In either case, the surface roughness of the finish can be adjusted to a sufficient thickness while minimizing the wear of the honing cloth. The diamond granules adhered to the outer band portion of the dresser substrate 2 are in contact with the honing cloth at a high speed and high pressure. Further, in the vicinity of the outer periphery of the finisher substrate 2, the vibration in the direction perpendicular to the surface of the honing cloth is intense near the inner periphery. Therefore, the diamond granules are easily broken by mechanical damage. However, the mechanical strength of diamond granules or lumpy diamond granules having a smaller particle size is stronger than that of diamond granules or sharp diamond granules having a larger particle size. Moreover, when grinding the honing cloth, the mechanical resistance is also relatively small. Therefore, durability is high. The strength of the entire substrate can also be averaged, and the overall durability is excellent. For example, in the ILD process of a CMP honing device, a faster honing speed of the 200821093 semiconductor wafer W is required. When the surface roughness of the honing cloth C is made coarse, the honing speed of the semiconductor wafer W becomes faster. Due to the large mechanical diameter of the diamond granules or the sharp diamond granules, the mechanical load is large, so it is easy to fall off and the abrasion is also very strong. Therefore, it causes a scratch on the semiconductor wafer W after the processing of the CMP honing device. Then, as described above, diamond granules or block-shaped diamond granules having a small particle diameter are disposed in the strip portion on the outer periphery of the substrate. For example, MB G6 80 (manufactured by Diamond Innovation Co., Ltd., average particle diameter X = 160 / / m) is used as a block of diamond granules. Further, MBG620 (ibid., average particle diameter X = 160 / / m) was used as a sharp diamond crucible. According to the above configuration, as compared with the case where the entire surface of the substrate is made of MBG620 (manufactured by Diamond Innovation Co., Ltd.), the scratch of the semiconductor wafer W is less overwhelming. In the inner peripheral belt portion, when the sharp diamond granule MBG620 is used, the surface roughness of the honing cloth C after finishing is the same. In addition, when the belt portion on the outer circumference is used to make a new surface of the honing cloth, it is necessary to perform over-grinding adjustment. Therefore, the width of the inner band portion in the radial direction may be selected to be wider than the outer band shape, and the width of the band portion may be selected. More specifically, when the radius of the finisher substrate is set to 1 〇〇, the width of the outer peripheral strip-shaped portion is 2 or more and 30 or less, and the width of the inner peripheral strip-shaped portion is 2 or more and 50 or less, and the radius of the central round portion It is better to select a size of 20 or more. When the width of the outer peripheral band portion is 2 or less, the arrangement of the outer peripheral band portion becomes meaningless. If the width of the outer peripheral strip portion exceeds 30, the effective width of the inner peripheral strip portion becomes too narrow. If the width of the inner band -17-200821093 is less than 2, the setting of the inner band is meaningless. If the width of the inner band portion exceeds 50, an effective outer peripheral band portion cannot be provided. The radius of the center circle is the part remaining after determining the band of the outer circumference and the inner circumference, and is automatically set. (Example 2) Further, in the STI process of the CMP honing apparatus, it is desirable that the scratch of the semiconductor wafer W is further reduced. Moreover, it is desirable to have a longer life trimmer. Thus, in the prior art, it is considered to use Μ B G 6 8 0 having a smaller particle size as the diamond granule to replace the MBG620. However, using only the trimmer of the MBG680 has the disadvantage of slower honing. Therefore, a small-diameter diamond granule (average particle diameter X = 90 / / m) is used in the outer band portion, and a large-diameter diamond granule is used in the inner band portion (X = 1 60 // m). As a result, the mechanical strength of the outer band of the dresser increases and the scratches are reduced. Further, since the surface roughness of the honing cloth C can be sufficiently thickened by the large-diameter diamond granules in the inner band portion, the honing speed of the semiconductor wafer W due to the honing cloth is also Faster. Further, there is an effect that the processing speed is improved as a whole and the life of the dresser becomes about twice (Example 3) On the other hand, in the Cu process of the CMP honing device, dents and erosion may become problems. It is known that the finer the surface roughness of the honing cloth C, the less the depression and the corrosion. However, when using, for example, a finer diamond 砥-18- 200821093 (for example, an average particle diameter of X = 1 〇//m), there are fewer depressions and corrosion, but there is a problem that the life of the diamond dresser becomes extremely short. . Therefore, in this example, a large-diameter diamond granule (for example, an average particle diameter of X = 40 // m) is used in the outer band portion, and a small-diameter diamond granule is used in the inner band portion (for example, The average particle size X = 1 〇 / / m ). It is preferable to bond the enamels in such a manner that the heights thereof are substantially uniform. With this configuration, compared with the case where only fine diamond granules are used (for example, the average particle diameter X = 10 // m), the depression and corrosion can be reduced to substantially the same extent. Furthermore, the life of the stone dresser can be reduced to approximately two times. In addition, in practical use, a diamond granule having a particle size of JIS size #400 to #80 is adhered to the outer band portion, and a diamond having a particle size smaller than that of the outer band portion is bonded to the inner band portion. The granules are better. This reason is the same as in Example 1. When it is more than #400, the honing effect is too small. Further, when it is below #80, the surface roughness after finishing is too thick, so the range is suitable. Preferably, the average particle diameter is more than 20%. The difference in effect is less than the difference in the average particle size of less than 20%, and the difference in effect is not sufficient. For example, in the round-shaped diamond enamel bonding portion at the center side, the #200 diamond granule 6 is used. In the diamond granule bonding portion 4 of the inner band portion, a diamond granule of #120 is used. In the ring-shaped diamond enamel bonding portion 4 of the outer peripheral band, a diamond granule 6 of #80 is used. Accordingly, the function for the purpose to be achieved can be obtained. Further, as shown in Fig. 2 and the like, diamond granules 6A, 6B, and 6C are adhered to the upper side of the diamond enamel bonding portion 4 and above the side surface via the adhesive layer 5. A slope is formed on the outer peripheral edge portion -19-200821093 of the diamond granule bonding portion 4 located at the outermost periphery. Diamond enamel 6 C is also adhered to the upper side of the inclined surface via the adhesive layer 5. The surface of the honing cloth C is honed as shown in the description of Fig. 7(b), where the outer periphery and the outer periphery of the diamond dresser 1 are acute. Further, the edge of the outer periphery of the strip portion and the edge of the outer periphery of the round diamond-bonded portion can be honed. That is to say, the honing can be performed using the entire surface of the substrate 2 with good efficiency. [Embodiment 2] As shown in Fig. 3, the diamond enamel bonding portions 4 D, 4 E, and 4 F are each formed of a ring-shaped block. The depressed portions 3D, 3E, and 3F are formed on the finisher substrate 2. Diamond enamel adhering portions 4D, 4E, 4F are embedded in these recessed portions 3D, 3E, 3F. Both are fixed by bolting or adhesive. As described above, the diamond enamel bonding portions, 4E, and 4F, which are formed of the annular blocks, can be freely and easily replaced, and therefore have excellent maintainability. [Example 3] In Example 1, the particle sizes of the diamond granules 6A, 6B, and 6C adhered to the respective diamond granule bonding portions 4A, 4B, and 4C were different. Further, by adjusting the heights of the diamond-grain bonded portions 4A, 4B, 4C, the difference in the size of the particles is absorbed to make the surface of the dresser 1 flat. In the third embodiment shown in Fig. 4, the thickness of the adhesive layer 5 of the adhesive is adjusted to make the surface of the dresser 1 flat. [Example 4] -20-200821093 In the second embodiment, the particle sizes of the diamond granules 6D, 6E, and 6F adhered to the respective diamond granule bonding portions 4D, 4E, and 4F are set to be different. Further, by adjusting the heights of the massive diamond-grain bonded portions 4D, 4E, and 4F, the difference in the size of the particles is absorbed to make the surface of the dresser 1 flat. In the fourth embodiment shown in Fig. 5, the thickness of the adhesive layer 5 of the adhesive is adjusted to make the surface of the dresser 1 flat. [Embodiment 5] In the fifth embodiment, as shown in Fig. 6, on the surface of the disk-shaped finisher substrate 2, a plurality of short-arc-shaped diamond-grain bonded portions 4G and 4H are disposed. These diamond enamel bonding portions 4 are formed so as to be swelled integrally on the surface of the dresser substrate 2. Further, on the outer periphery of the finisher substrate 2, the diamond-grain bonded portions 4G are arranged in a ring shape. Further, on the inner side of the finisher substrate 2, the diamond enamel adhering portion 4H is provided in a spiral shape. Here, the diamond granules adhered to the diamond granule bonding portion 4 G located at the outer periphery and the diamond granules bonded to the diamond granule bonding portion 4H located inside are different types. Thereby, the same functions as those of the above embodiment can be exerted. Fig. 8 is an explanatory view showing the relationship between the surface roughness and the honing time. The vertical axis of the graph of Fig. 8 indicates the surface roughness Ra and the horizontal axis indicates the honing time (hr). The number on the right side is expressed by JIS as the particle size of the diamond granules in the outer band portion and the inner band portion. For example, SD1 00-SD60 means that the outer band portion is #1〇〇, and the inner band portion -21 - 200821093 is #60 diamond granule. SD100 (only on the outside) means that the ribbon is not bonded to the inner part of the band. The graph in Fig. 8 demonstrates the fact that the surface roughness after finishing of the honing cloth is determined by the particle size of the diamond granules in the inner circumferential band. Fig. 9 is an explanatory view showing a change in the honing speed of the honing cloth. The vertical axis of the graph in Fig. 9 indicates the honing speed ( // m/h 〇 and the horizontal axis indicates the honing time ( hr ). The number on the right side is the same as in Fig. 8. The graph in Fig. 9 will The honing speed of the honing cloth is also determined by the particle size of the diamond granules in the inner band. [Simplified illustration] Fig. 1 is a plan view of the diamond dresser of the first embodiment. Fig. 3 is a cross-sectional view showing the main part of the diamond dresser of the second embodiment. Fig. 4 is a cross-sectional view showing the main part of the diamond dresser of the third embodiment. Fig. 6 is a plan view showing an arrangement example of the diamond granule bonding portion of the embodiment 5. Fig. 7 is a CMP honing device using a diamond dresser. Fig. 8 is an explanatory view showing the relationship between the surface roughness and the honing time. Fig. 9 is an explanatory view showing the change of the honing speed of the honing cloth. [Description of main components] W = semiconductor crystal Round-22- 200821093 C : Honing cloth 1: Diamond dresser 2: Dresser substrate 3 : Annular groove 4 : Diamond 黏 grain bonding part 5 : Bonding layer 6 : Diamond 砥 -23-